TWI466275B - 寬通孔影像感測器像素 - Google Patents
寬通孔影像感測器像素 Download PDFInfo
- Publication number
- TWI466275B TWI466275B TW098119832A TW98119832A TWI466275B TW I466275 B TWI466275 B TW I466275B TW 098119832 A TW098119832 A TW 098119832A TW 98119832 A TW98119832 A TW 98119832A TW I466275 B TWI466275 B TW I466275B
- Authority
- TW
- Taiwan
- Prior art keywords
- charge
- voltage conversion
- conversion mechanism
- image sensor
- pixels
- Prior art date
Links
- 238000012546 transfer Methods 0.000 claims abstract description 48
- 238000006243 chemical reaction Methods 0.000 claims abstract description 23
- 230000004044 response Effects 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims description 24
- 238000009792 diffusion process Methods 0.000 claims description 20
- 238000003384 imaging method Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
- 239000000872 buffer Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005236 sound signal Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
- H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/182—Colour image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Color Television Image Signal Generators (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/138,651 US8035716B2 (en) | 2008-06-13 | 2008-06-13 | Wide aperture image sensor pixel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201013909A TW201013909A (en) | 2010-04-01 |
| TWI466275B true TWI466275B (zh) | 2014-12-21 |
Family
ID=40940390
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098119832A TWI466275B (zh) | 2008-06-13 | 2009-06-12 | 寬通孔影像感測器像素 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8035716B2 (enExample) |
| EP (1) | EP2304798B1 (enExample) |
| JP (1) | JP5343128B2 (enExample) |
| KR (1) | KR101438710B1 (enExample) |
| CN (1) | CN102057668B (enExample) |
| AT (1) | ATE537560T1 (enExample) |
| TW (1) | TWI466275B (enExample) |
| WO (1) | WO2009151585A1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI504256B (zh) * | 2008-04-07 | 2015-10-11 | Sony Corp | 固態成像裝置，其訊號處理方法，及電子設備 |
| JP5537172B2 (ja) | 2010-01-28 | 2014-07-02 | ソニー株式会社 | 固体撮像装置及び電子機器 |
| JP5644177B2 (ja) | 2010-05-07 | 2014-12-24 | ソニー株式会社 | 固体撮像装置、および、その製造方法、電子機器 |
| KR102076217B1 (ko) * | 2013-08-06 | 2020-03-02 | 삼성전자주식회사 | 이미지 센서 및 이를 포함하는 전자 장치 |
| US9398237B2 (en) * | 2014-04-30 | 2016-07-19 | Sony Corporation | Image sensor with floating diffusion interconnect capacitor |
| GB2537421A (en) * | 2015-04-17 | 2016-10-19 | Stmicroelectronics (Research & Development) Ltd | A pixel having a plurality of photodiodes |
| JP7458746B2 (ja) * | 2019-11-01 | 2024-04-01 | キヤノン株式会社 | 光電変換装置、撮像システム及び移動体 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040246479A1 (en) * | 2001-07-06 | 2004-12-09 | Cartlidge Andrew G. | Particle analyzing system and methodology |
| US20050110885A1 (en) * | 2003-11-26 | 2005-05-26 | Altice Peter P.Jr. | Image sensor with a gated storage node linked to transfer gate |
| US20080136933A1 (en) * | 2006-12-11 | 2008-06-12 | Digital Imaging Systems Gmbh | Apparatus for controlling operation of a multiple photosensor pixel image sensor |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5164831A (en) | 1990-03-15 | 1992-11-17 | Eastman Kodak Company | Electronic still camera providing multi-format storage of full and reduced resolution images |
| JP2001527342A (ja) | 1997-12-18 | 2001-12-25 | シメージ オーワイ | 放射線を画像化するためのデバイス |
| JP2000152086A (ja) * | 1998-11-11 | 2000-05-30 | Canon Inc | 撮像装置および撮像システム |
| US7057656B2 (en) | 2000-02-11 | 2006-06-06 | Hyundai Electronics Industries Co., Ltd. | Pixel for CMOS image sensor having a select shape for low pixel crosstalk |
| JP4109944B2 (ja) * | 2002-09-20 | 2008-07-02 | キヤノン株式会社 | 固体撮像装置の製造方法 |
| JP3916612B2 (ja) * | 2003-02-13 | 2007-05-16 | 松下電器産業株式会社 | 固体撮像装置、その駆動方法及びそれを用いたカメラ |
| JP4230406B2 (ja) * | 2004-04-27 | 2009-02-25 | 富士通マイクロエレクトロニクス株式会社 | 固体撮像装置 |
| JP4935354B2 (ja) | 2004-07-20 | 2012-05-23 | 富士通セミコンダクター株式会社 | Ｃｍｏｓ撮像素子 |
| JP4492250B2 (ja) * | 2004-08-11 | 2010-06-30 | ソニー株式会社 | 固体撮像素子 |
| JP2006237462A (ja) * | 2005-02-28 | 2006-09-07 | Matsushita Electric Ind Co Ltd | 固体撮像装置 |
| JP4224036B2 (ja) * | 2005-03-17 | 2009-02-12 | 富士通マイクロエレクトロニクス株式会社 | フォトダイオード領域を埋め込んだイメージセンサ及びその製造方法 |
| US8115206B2 (en) * | 2005-07-22 | 2012-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8139130B2 (en) * | 2005-07-28 | 2012-03-20 | Omnivision Technologies, Inc. | Image sensor with improved light sensitivity |
| US8274715B2 (en) | 2005-07-28 | 2012-09-25 | Omnivision Technologies, Inc. | Processing color and panchromatic pixels |
| JP4764243B2 (ja) * | 2006-04-20 | 2011-08-31 | 株式会社東芝 | 固体撮像装置 |
| US7773138B2 (en) | 2006-09-13 | 2010-08-10 | Tower Semiconductor Ltd. | Color pattern and pixel level binning for APS image sensor using 2×2 photodiode sharing scheme |
-
2008
- 2008-06-13 US US12/138,651 patent/US8035716B2/en active Active
-
2009
- 2009-06-09 WO PCT/US2009/003476 patent/WO2009151585A1/en not_active Ceased
- 2009-06-09 AT AT09762881T patent/ATE537560T1/de active
- 2009-06-09 EP EP09762881A patent/EP2304798B1/en active Active
- 2009-06-09 JP JP2011513490A patent/JP5343128B2/ja active Active
- 2009-06-09 KR KR1020117000820A patent/KR101438710B1/ko active Active
- 2009-06-09 CN CN200980121397.7A patent/CN102057668B/zh active Active
- 2009-06-12 TW TW098119832A patent/TWI466275B/zh active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040246479A1 (en) * | 2001-07-06 | 2004-12-09 | Cartlidge Andrew G. | Particle analyzing system and methodology |
| US20050110885A1 (en) * | 2003-11-26 | 2005-05-26 | Altice Peter P.Jr. | Image sensor with a gated storage node linked to transfer gate |
| US20080136933A1 (en) * | 2006-12-11 | 2008-06-12 | Digital Imaging Systems Gmbh | Apparatus for controlling operation of a multiple photosensor pixel image sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5343128B2 (ja) | 2013-11-13 |
| CN102057668B (zh) | 2016-09-21 |
| US8035716B2 (en) | 2011-10-11 |
| ATE537560T1 (de) | 2011-12-15 |
| WO2009151585A1 (en) | 2009-12-17 |
| JP2011525735A (ja) | 2011-09-22 |
| CN102057668A (zh) | 2011-05-11 |
| US20090310004A1 (en) | 2009-12-17 |
| EP2304798B1 (en) | 2011-12-14 |
| TW201013909A (en) | 2010-04-01 |
| EP2304798A1 (en) | 2011-04-06 |
| KR101438710B1 (ko) | 2014-09-05 |
| KR20110028622A (ko) | 2011-03-21 |
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