CN102057668B - 宽孔径图像传感器像素 - Google Patents

宽孔径图像传感器像素 Download PDF

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Publication number
CN102057668B
CN102057668B CN200980121397.7A CN200980121397A CN102057668B CN 102057668 B CN102057668 B CN 102057668B CN 200980121397 A CN200980121397 A CN 200980121397A CN 102057668 B CN102057668 B CN 102057668B
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CN
China
Prior art keywords
pixels
charge
pixel
transistor
imageing sensor
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CN200980121397.7A
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English (en)
Chinese (zh)
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CN102057668A (zh
Inventor
克里斯托弗·帕克斯
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Omnivision Technologies Inc
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Omnivision Technologies Inc
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Publication of CN102057668A publication Critical patent/CN102057668A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)
CN200980121397.7A 2008-06-13 2009-06-09 宽孔径图像传感器像素 Active CN102057668B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/138,651 2008-06-13
US12/138,651 US8035716B2 (en) 2008-06-13 2008-06-13 Wide aperture image sensor pixel
PCT/US2009/003476 WO2009151585A1 (en) 2008-06-13 2009-06-09 Wide aperture image sensor pixel

Publications (2)

Publication Number Publication Date
CN102057668A CN102057668A (zh) 2011-05-11
CN102057668B true CN102057668B (zh) 2016-09-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980121397.7A Active CN102057668B (zh) 2008-06-13 2009-06-09 宽孔径图像传感器像素

Country Status (8)

Country Link
US (1) US8035716B2 (enExample)
EP (1) EP2304798B1 (enExample)
JP (1) JP5343128B2 (enExample)
KR (1) KR101438710B1 (enExample)
CN (1) CN102057668B (enExample)
AT (1) ATE537560T1 (enExample)
TW (1) TWI466275B (enExample)
WO (1) WO2009151585A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI504256B (zh) * 2008-04-07 2015-10-11 Sony Corp 固態成像裝置，其訊號處理方法，及電子設備
JP5537172B2 (ja) 2010-01-28 2014-07-02 ソニー株式会社 固体撮像装置及び電子機器
JP5644177B2 (ja) 2010-05-07 2014-12-24 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
KR102076217B1 (ko) * 2013-08-06 2020-03-02 삼성전자주식회사 이미지 센서 및 이를 포함하는 전자 장치
US9398237B2 (en) * 2014-04-30 2016-07-19 Sony Corporation Image sensor with floating diffusion interconnect capacitor
GB2537421A (en) * 2015-04-17 2016-10-19 Stmicroelectronics (Research & Development) Ltd A pixel having a plurality of photodiodes
JP7458746B2 (ja) * 2019-11-01 2024-04-01 キヤノン株式会社 光電変換装置、撮像システム及び移動体

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6252217B1 (en) * 1997-12-18 2001-06-26 Simage Oy Device for imaging radiation
US20020008767A1 (en) * 2000-02-11 2002-01-24 Do-Young Lee Pixel layout for CMOS image sensor
US20050110885A1 (en) * 2003-11-26 2005-05-26 Altice Peter P.Jr. Image sensor with a gated storage node linked to transfer gate
US20070024879A1 (en) * 2005-07-28 2007-02-01 Eastman Kodak Company Processing color and panchromatic pixels
EP1780795A1 (en) * 2004-07-20 2007-05-02 Fujitsu Limited Cmos imaging element
CN101060128A (zh) * 2006-04-20 2007-10-24 株式会社东芝 固体摄像装置
US20080062290A1 (en) * 2006-09-13 2008-03-13 Tower Semiconductor Ltd. Color Pattern And Pixel Level Binning For APS Image Sensor Using 2x2 Photodiode Sharing Scheme
US20080136933A1 (en) * 2006-12-11 2008-06-12 Digital Imaging Systems Gmbh Apparatus for controlling operation of a multiple photosensor pixel image sensor

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Publication number Priority date Publication date Assignee Title
US5164831A (en) 1990-03-15 1992-11-17 Eastman Kodak Company Electronic still camera providing multi-format storage of full and reduced resolution images
JP2000152086A (ja) * 1998-11-11 2000-05-30 Canon Inc 撮像装置および撮像システム
US7338168B2 (en) * 2001-07-06 2008-03-04 Palantyr Research, Llc Particle analyzing system and methodology
JP4109944B2 (ja) * 2002-09-20 2008-07-02 キヤノン株式会社 固体撮像装置の製造方法
JP3916612B2 (ja) * 2003-02-13 2007-05-16 松下電器産業株式会社 固体撮像装置、その駆動方法及びそれを用いたカメラ
JP4230406B2 (ja) * 2004-04-27 2009-02-25 富士通マイクロエレクトロニクス株式会社 固体撮像装置
JP4492250B2 (ja) * 2004-08-11 2010-06-30 ソニー株式会社 固体撮像素子
JP2006237462A (ja) * 2005-02-28 2006-09-07 Matsushita Electric Ind Co Ltd 固体撮像装置
JP4224036B2 (ja) * 2005-03-17 2009-02-12 富士通マイクロエレクトロニクス株式会社 フォトダイオード領域を埋め込んだイメージセンサ及びその製造方法
US8115206B2 (en) * 2005-07-22 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8139130B2 (en) * 2005-07-28 2012-03-20 Omnivision Technologies, Inc. Image sensor with improved light sensitivity

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6252217B1 (en) * 1997-12-18 2001-06-26 Simage Oy Device for imaging radiation
US20020008767A1 (en) * 2000-02-11 2002-01-24 Do-Young Lee Pixel layout for CMOS image sensor
US20050110885A1 (en) * 2003-11-26 2005-05-26 Altice Peter P.Jr. Image sensor with a gated storage node linked to transfer gate
EP1780795A1 (en) * 2004-07-20 2007-05-02 Fujitsu Limited Cmos imaging element
US20070024879A1 (en) * 2005-07-28 2007-02-01 Eastman Kodak Company Processing color and panchromatic pixels
CN101060128A (zh) * 2006-04-20 2007-10-24 株式会社东芝 固体摄像装置
US20080062290A1 (en) * 2006-09-13 2008-03-13 Tower Semiconductor Ltd. Color Pattern And Pixel Level Binning For APS Image Sensor Using 2x2 Photodiode Sharing Scheme
US20080136933A1 (en) * 2006-12-11 2008-06-12 Digital Imaging Systems Gmbh Apparatus for controlling operation of a multiple photosensor pixel image sensor

Also Published As

Publication number Publication date
JP5343128B2 (ja) 2013-11-13
US8035716B2 (en) 2011-10-11
ATE537560T1 (de) 2011-12-15
WO2009151585A1 (en) 2009-12-17
JP2011525735A (ja) 2011-09-22
CN102057668A (zh) 2011-05-11
US20090310004A1 (en) 2009-12-17
EP2304798B1 (en) 2011-12-14
TW201013909A (en) 2010-04-01
TWI466275B (zh) 2014-12-21
EP2304798A1 (en) 2011-04-06
KR101438710B1 (ko) 2014-09-05
KR20110028622A (ko) 2011-03-21

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Effective date: 20110712

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Applicant before: Eastman Kodak Corp.

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Address after: American California

Patentee after: OmniVision Technologies, Inc.

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