KR101438710B1 - 넓은 애퍼처 이미지 센서 픽셀 - Google Patents

넓은 애퍼처 이미지 센서 픽셀 Download PDF

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KR101438710B1
KR101438710B1 KR1020117000820A KR20117000820A KR101438710B1 KR 101438710 B1 KR101438710 B1 KR 101438710B1 KR 1020117000820 A KR1020117000820 A KR 1020117000820A KR 20117000820 A KR20117000820 A KR 20117000820A KR 101438710 B1 KR101438710 B1 KR 101438710B1
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South Korea
Prior art keywords
voltage conversion
conversion mechanism
charge
image sensor
pixels
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KR1020117000820A
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Korean (ko)
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KR20110028622A (ko
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크리스토퍼 파크스
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옴니비전 테크놀러지즈 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)
KR1020117000820A 2008-06-13 2009-06-09 넓은 애퍼처 이미지 센서 픽셀 Active KR101438710B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/138,651 2008-06-13
US12/138,651 US8035716B2 (en) 2008-06-13 2008-06-13 Wide aperture image sensor pixel
PCT/US2009/003476 WO2009151585A1 (en) 2008-06-13 2009-06-09 Wide aperture image sensor pixel

Publications (2)

Publication Number Publication Date
KR20110028622A KR20110028622A (ko) 2011-03-21
KR101438710B1 true KR101438710B1 (ko) 2014-09-05

Family

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Application Number Title Priority Date Filing Date
KR1020117000820A Active KR101438710B1 (ko) 2008-06-13 2009-06-09 넓은 애퍼처 이미지 센서 픽셀

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Country Link
US (1) US8035716B2 (enExample)
EP (1) EP2304798B1 (enExample)
JP (1) JP5343128B2 (enExample)
KR (1) KR101438710B1 (enExample)
CN (1) CN102057668B (enExample)
AT (1) ATE537560T1 (enExample)
TW (1) TWI466275B (enExample)
WO (1) WO2009151585A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI504256B (zh) * 2008-04-07 2015-10-11 Sony Corp 固態成像裝置，其訊號處理方法，及電子設備
JP5537172B2 (ja) 2010-01-28 2014-07-02 ソニー株式会社 固体撮像装置及び電子機器
JP5644177B2 (ja) 2010-05-07 2014-12-24 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
KR102076217B1 (ko) * 2013-08-06 2020-03-02 삼성전자주식회사 이미지 센서 및 이를 포함하는 전자 장치
US9398237B2 (en) * 2014-04-30 2016-07-19 Sony Corporation Image sensor with floating diffusion interconnect capacitor
GB2537421A (en) * 2015-04-17 2016-10-19 Stmicroelectronics (Research & Development) Ltd A pixel having a plurality of photodiodes
JP7458746B2 (ja) * 2019-11-01 2024-04-01 キヤノン株式会社 光電変換装置、撮像システム及び移動体

Citations (4)

* Cited by examiner, † Cited by third party
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KR20050103867A (ko) * 2004-04-27 2005-11-01 후지쯔 가부시끼가이샤 고체 촬상 장치
KR20060095439A (ko) * 2005-02-28 2006-08-31 마쯔시다덴기산교 가부시키가이샤 고체 촬상 장치
KR20060101187A (ko) * 2005-03-17 2006-09-22 후지쯔 가부시끼가이샤 포토다이오드 영역을 매립한 이미지 센서 및 그 제조 방법
KR20080035643A (ko) * 2005-07-22 2008-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치

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US5164831A (en) 1990-03-15 1992-11-17 Eastman Kodak Company Electronic still camera providing multi-format storage of full and reduced resolution images
JP2001527342A (ja) 1997-12-18 2001-12-25 シメージ オーワイ 放射線を画像化するためのデバイス
JP2000152086A (ja) * 1998-11-11 2000-05-30 Canon Inc 撮像装置および撮像システム
US7057656B2 (en) 2000-02-11 2006-06-06 Hyundai Electronics Industries Co., Ltd. Pixel for CMOS image sensor having a select shape for low pixel crosstalk
US7338168B2 (en) * 2001-07-06 2008-03-04 Palantyr Research, Llc Particle analyzing system and methodology
JP4109944B2 (ja) * 2002-09-20 2008-07-02 キヤノン株式会社 固体撮像装置の製造方法
JP3916612B2 (ja) * 2003-02-13 2007-05-16 松下電器産業株式会社 固体撮像装置、その駆動方法及びそれを用いたカメラ
US7443437B2 (en) * 2003-11-26 2008-10-28 Micron Technology, Inc. Image sensor with a gated storage node linked to transfer gate
JP4935354B2 (ja) 2004-07-20 2012-05-23 富士通セミコンダクター株式会社 Ｃｍｏｓ撮像素子
JP4492250B2 (ja) * 2004-08-11 2010-06-30 ソニー株式会社 固体撮像素子
US8139130B2 (en) * 2005-07-28 2012-03-20 Omnivision Technologies, Inc. Image sensor with improved light sensitivity
US8274715B2 (en) 2005-07-28 2012-09-25 Omnivision Technologies, Inc. Processing color and panchromatic pixels
JP4764243B2 (ja) * 2006-04-20 2011-08-31 株式会社東芝 固体撮像装置
US7773138B2 (en) 2006-09-13 2010-08-10 Tower Semiconductor Ltd. Color pattern and pixel level binning for APS image sensor using 2×2 photodiode sharing scheme
US20080136933A1 (en) 2006-12-11 2008-06-12 Digital Imaging Systems Gmbh Apparatus for controlling operation of a multiple photosensor pixel image sensor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050103867A (ko) * 2004-04-27 2005-11-01 후지쯔 가부시끼가이샤 고체 촬상 장치
KR20060095439A (ko) * 2005-02-28 2006-08-31 마쯔시다덴기산교 가부시키가이샤 고체 촬상 장치
KR20060101187A (ko) * 2005-03-17 2006-09-22 후지쯔 가부시끼가이샤 포토다이오드 영역을 매립한 이미지 센서 및 그 제조 방법
KR20080035643A (ko) * 2005-07-22 2008-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치

Also Published As

Publication number Publication date
JP5343128B2 (ja) 2013-11-13
CN102057668B (zh) 2016-09-21
US8035716B2 (en) 2011-10-11
ATE537560T1 (de) 2011-12-15
WO2009151585A1 (en) 2009-12-17
JP2011525735A (ja) 2011-09-22
CN102057668A (zh) 2011-05-11
US20090310004A1 (en) 2009-12-17
EP2304798B1 (en) 2011-12-14
TW201013909A (en) 2010-04-01
TWI466275B (zh) 2014-12-21
EP2304798A1 (en) 2011-04-06
KR20110028622A (ko) 2011-03-21

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