TWI462151B - 金屬配線形成用複製基板及藉由上述複製用基板的金屬配線形成方法 - Google Patents

金屬配線形成用複製基板及藉由上述複製用基板的金屬配線形成方法 Download PDF

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TWI462151B
TWI462151B TW100143260A TW100143260A TWI462151B TW I462151 B TWI462151 B TW I462151B TW 100143260 A TW100143260 A TW 100143260A TW 100143260 A TW100143260 A TW 100143260A TW I462151 B TWI462151 B TW I462151B
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substrate
metal
metal wiring
wiring material
powder
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TW100143260A
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English (en)
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TW201246278A (en
Inventor
Toshinori Ogashiwa
Masaaki Kurita
Takashi Nishimori
Yukio Kanehira
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Tanaka Precious Metal Ind
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    • H—ELECTRICITY
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4885—Wire-like parts or pins
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B22F7/08—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • B23K1/0016—Brazing of electronic components
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • B23K2101/36—Electric or electronic devices
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    • B81—MICROSTRUCTURAL TECHNOLOGY
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Description

金屬配線形成用複製基板及藉由上述複製用基板的金 屬配線形成方法
本發明係關於半導體晶圓、化合物晶圓、MEMS晶圓等的被複製物上形成金屬配線的複製用基板及利用此之金屬配線方法。
隨著半導體晶片等的電子零件的構裝密度的高密度化，其構裝方法由以前的打線接合法，變成如覆晶接合法直接將半導體晶片直接構裝的無線構裝法成為主流。使用該構裝方法的電子零件的製造步驟，係於裝置晶圓的半導體晶片上的接頭電極或於半導體晶片的連接用外部電極上形成凸塊而構成金屬配線，將此對基板面下接合者。此外，一般在於凸塊形成前，在接頭電極等之上施以金屬化處理形成阻障金屬層，而於其上形成凸塊。
凸塊形成步驟之先前方法，一般採用鍍敷法。以鍍敷法形成的凸塊由於具有緻密而良好的電傳導特性，故可認為有利於用於作為電極。但是，金屬配線的微細化被認為今後將更加的進行，而以鍍敷法之凸塊形成，有無法充分應付之疑慮。因此，有如專利文獻1所述藉由使用複製基 板的複製法之凸塊形成法之提案。
藉由複製基板的凸塊形成法，係預先在玻璃等的基板上製作成為凸塊的配線材料的複製用基板。然後，將複製基板覆蓋在預先金屬化處理的基板上加壓、加熱，使基板複製配線材料形成凸塊的方法。此方法，係藉由加壓，加熱的控制，可將複製用基板上的任意配線材料，複製在晶圓的任意位置，可使金屬配線的微細化的同時，可避免對基板的不良區塊的配線形成而可避免材料的浪費。
[專利文獻1]日本特開平5-144870號公報
然而，使用上述複製基板的凸塊形成的過程，由複製用基板對基板複製凸塊時，晶圓側的加熱溫度與複製基板側的加熱溫度有相對的溫度差。具體而言，晶圓側的加熱溫度為300~400℃，複製基板側的加熱溫度為100~200℃。然後，該設定溫度及溫度差將成複製基板變形(翹曲)的主要原因。即，複製基板使用玻璃之情形為多，其加熱溫度超過200℃，就有變形之虞。此時，即使將複製基板的加熱溫度本身稍微設定較低，晶圓側的加熱溫度高，則因經由凸塊的傳熱有使玻璃基板的溫度上升之虞。
此外，為複製凸塊而使晶圓側的溫度提高，在於基板上形成有半導體電路之情形，有損傷電路之虞。因此，雖然原本凸塊複製時加熱溫較低為佳，但是無法輕易的降低晶圓側的加熱溫度。此係由於複製用基板上的凸塊，一般係以鍍敷法形成，但為將鍍敷法所形成的凸塊複製到晶圓，需要在晶圓與凸塊之間產生充分的接合，因而需要高 溫加熱。
因此本發明係關於藉由複製法將金屬配線形成於晶圓等的被複製物之複製用基板，提供可使被複製物側的加熱溫度較先前低者。此外，亦揭示使用該複製用基板之金屬配線之形成方法。
本發明者們，為了解決上述課題，找出具備即使對被複製物低溫即可複製之構成之金屬配線材料之複製用基板，以本發明者們的技術性見解進行研究思考。然後，發現將高純度，而粒徑細微的金屬粉末燒結而成之成形體，可以較低溫對複製物接合，且其可作用作為金屬配線而想到本發明。
即本發明係一種複製用基板，其係由基板、形成於上述基板上之至少一個金屬配線材料、及形成於上述基板與上述金屬配線材料之間的底層金屬膜所構成，將上述金屬配線材料複製到被複製物者，上述金屬配線材料係燒結選自由純度99.9重量%以上，平均粒徑為0.01μm~1.0μm之金粉、銀粉、鉑粉、鈀粉、銅粉之一種以上的金屬粉末而成之成形體，上述底層金屬膜係金、銀、鉑、鈀、釕、銠、銥、鉻、鈦、鎢、鉭、鎳、銅、鋯之任一金屬或該等的合金所組成的複製用基板。
以下，詳細說明本發明。如上所述，本發明的複製用基板，其中複製到複製物(晶圓)之金屬配線材料(凸塊)係使用燒結既定的金屬粉末所形成的燒結體。由該燒結體所組成的金屬配線材料，與先前以鍍敷技術所形成之緻密物不同而為多孔質，在於複製時以點接觸與被複製物表面接觸。本發明們認為，藉由該多孔質所形成的點接觸狀態，可減少與被複製物的接合所需的溫度。然後，藉此可使複製時的被複製物側的溫度較先前的溫度低(300℃以下)。
關於由該燒結體所組成的金屬配線材料，規定燒結之金屬粉末的純度、粒徑，關於純度，係因考慮作成複製後的凸塊時的導電性。即純度若未滿99.9重量%，則有無法確保所需導電性的可能。此外，關於金屬粉末的粒徑，粒徑超過1.0μm的金屬粉容易在成形體上產生很大的間隙，而最後無法確保所需的導電性。再者，金屬粉末的粒徑細小為佳，但粒徑未滿0.01μm的粉末操作性較差，故以0.01μm為下限。
由該燒結體所組成的金屬配線材料，雖為多孔質，其密度以金屬粉的密度的0.45~0.95倍為佳。使燒結進行則金屬配線材料將成緻密者，其密度接近塊材之金屬密度。由於密度超過塊材金屬密度的0.95倍的金屬配線材料過硬，將難以複製。另一方面，未滿塊材金屬的0.45倍，則金屬粉相互的接觸不充分而缺乏導電性，不適合作為金屬配線。
此外，金屬配線材料係由金粉、銀粉、鉑粉、鈀粉、 銅粉或該等金屬的合金粉所構成。係顧慮作成凸塊時的導電性。金屬配線材料，可為僅將金屬粉末的1種燒結者，亦可為混合2種以上。例如，可將金粉單獨燒結，亦可混合金粉與鈀粉，混合金粉與銀粉等，將此燒結。
然後，上述金屬配線材料，並不必直接形成於基板，於基板與金屬配線材料之間，形成底層金屬膜。於基板使用玻璃基板之情形為多，但是玻璃與金屬缺乏接合性，直接形成金屬配線材料，則有在操作複製用基板時脫落之虞。因此，為確保金屬配線材料的密著性，而形成底層金屬膜。該底層金屬膜，可為金、銀、鉑、鈀、釕、銠、銥、鉻、鈦、鎢、鉭、鎳、銅、鋯的任一金屬或由該等的合金所組成。
關於本發明的複製用基板，可進一步，於金屬配線材料的表面上(被複製物側的端面)形成至少1層由既定金屬所組成的披覆層。如上所述，在以無線構裝法之電子零件的製造步驟，於凸塊的形成前，於晶圓上的接頭電極上施以金屬化處理形成阻障金屬層，於其上形成凸塊之情形為多。因此，於本發明，預先在成為凸塊的金屬配線材料形成披覆層，藉由以此狀態進行複製，可將阻障金屬層與凸塊同時形成。形成阻障層用的金屬化處理對半導體電路而言將成負荷，藉由設置披覆層而無須基板的金屬化處理而可減輕該負荷。此外，利用披覆層，可簡化凸塊形成的步驟。
如此地，即使形成披覆層，亦可作金屬配線材料的複 製，係由於只要披覆層在既定的厚度，則可容易地維持上述燒結體的表面的點接觸之接合。在此，可維持燒結體的表面狀態的程度的披覆層的厚度，需作成1μm以下。但是，披覆層雖可說越薄越好，但是過薄則難以確保作為金屬膜的連續性。因此，披覆層厚度的下限值以0.003μm為佳。
構成披覆層的金屬係金、銀、鉑、鈀、釕、銠、銥、鉻、鈦、鎢、鉭、鎳、銅、鋯之任一金屬或合金，係與金屬配線材料不同的金屬。此外披覆層的構造係以緻密的薄膜狀者為佳。以任一形態均以1μm以下的厚度為佳。此外，可為單層，亦可為複數金屬之多層構造，合計的厚度在1μm以下即可。
該底層金屬膜，可係與金屬配線材料相同組成的金屬，以不同的組成的金屬膜更佳。與金屬配線材料相同的組成，則金屬配線材料與底層金屬膜的密著性變高，而在被複製物複製時有金屬配線材料殘留於基板之虞。但是，即使將底層金屬膜和金屬配線材料以相同組成構成，藉由調整複製時的加熱條件的調整等提高金屬配線材料與被複製物的密著性，可避免殘留，故並不一定需要要求組成不同。
底層金屬膜，以厚度1~100nm為佳。未滿1nm，則底層金屬膜與基板的密著性低，無法確保金屬配線材料的密著性。此外，關於上限並無特別限制，即使以超過100nm的厚度，效果並沒有不同。然後，藉由將底層金屬膜的厚 度調整在上述範圍內，可進行金屬配線材料的複製率。此係底層金屬膜與金屬配線材料為相同材質時(例如，在玻璃基板上，以Au作為底層金屬膜，使用Au粉末作為金屬配線材料時)，由於底層金屬膜與金屬配線材料的密著性會變高，故藉由使底層金屬膜的厚度變薄，可於複製時使底層金屬膜由基板剝離。使該底層金屬膜變薄，於複製時剝離的方法，較使底層金屬膜較厚時，有可抑制金屬配線材料的殘留之情形，故可有效地調整複製率。如此地瞄準複製時的剝離使底層金屬膜變薄時，其厚度以構成金屬配線材料的金屬粉末的平均粒子徑的1/3以下為佳。
底層金屬膜，可為單層，亦可形成複數層。例如，可於玻璃基板上形成鈦膜，於其上形成金膜。亦可將如此之多層膜作熱處理，使鈦擴散到表面的同時使之氧化形成氧化物。
再者，Cr、W、TiW等容易氧化的金屬，將該等以單層使用時，亦可對其表面作氧電漿處理使表面氧化膜安定化。該氧電漿處理係於臭氧或氧氣氣氛中之大氣壓或減壓下的電漿處理。
形成金屬配線材料的基板，材質一般係以玻璃或以樹脂增強的玻璃，惟亦可使用其他矽、鐵鎳鈷合金等的金屬。此外，其厚度亦無特別限制，考慮操作性或複製的穩定性以50~500μm為佳。
關於本發明的複製用基板的製造步驟，對玻璃等的基板，形成底層金屬膜，之後進行金屬配線材料的形成。底 層金屬膜的形成，可使用濺鍍法、鍍敷法、CVD法等的各種的薄膜製程。
另一方面，關於金屬配線材料的形成，如至今所述，在於本發明，將金屬粉燒結形成金屬配線材料。由該金屬粉所組成的金屬配線材料的形成，使用於金屬粉適宜添加有機溶劑之金屬糊料成形為佳。糊料，可以如後所述之多樣的方法塗佈，此外，可對應配線的微細化。
金屬糊的有機溶劑，以酯醇、松油醇、松油、丁基卡必醇醋酸酯、丁基卡必醇、卡必醇為佳。例如，較佳的酯醇系有機溶劑，可舉2,2,4-三甲基-3-羥基五異丁酯(C12 H24 O3 )。因為本溶劑，可以相對較低的溫度乾燥。
此外，加上上述有機溶劑，金屬糊料，亦可含有選自由丙烯酸系樹脂、纖維素系樹脂、醇酸樹脂之一種以上。進一步加入該等樹脂等，則可防止金屬糊料中的金屬粉團聚而變均質，可形成沒有偏析的凸塊。再者，丙烯酸系樹脂，可舉甲基丙烯酸甲酯聚合物，纖維素系樹脂，可舉乙基纖維素，醇酸樹脂，無水鄰苯二甲酸樹脂。然後，該等之中，以乙基纖維素特別佳。
金屬糊料的塗佈步驟，並無特別限定，例如可將凸塊形狀的模具載置於基板上，對此填充金屬糊料。此外，亦可與先前的鍍敷法之凸塊形成同樣地，使用抗蝕劑。金屬糊料的塗佈方法，可使用旋轉塗佈法、網版印刷法、噴墨法、將滴下之糊料以矽膠製刮板填充於孔內之方法等各種方法。
金屬糊料塗佈之後，需將金屬糊料塗佈、乾燥之後燒結。藉此，漿糊料中的金屬粒子相互，及接合構材的接合面(糊料塗佈面)與金屬粒子之間，形成互相點接觸之進接狀態，使金屬配線材料的形狀穩定。該燒結溫度，以80~300℃為佳。因為未滿80℃則不會發生點接觸。另一方面，若以超過300℃的溫度燒結，則因為燒結過度進行，而金屬粉末之間進行頸合而堅固地結合，而成為過硬的狀態。此外，以超過300℃的加熱則有玻璃基板產生變形之虞。再者，燒結時的加熱時間，以30~120分為佳。於短時間無法使燒結爐的溫度穩定而無法充分燒結，此外，過於長時間則有損生產率。此外，該燒結，在沒有壓力的負荷的狀態進行為佳。
此外，於金屬配線材料上形成披覆層時，其形成方法，關於薄膜狀的披覆層，係與底層金屬同樣地，可使用濺鍍法、鍍敷法、CVD法等的各種薄膜製程。
其次，以關於本發明之複製用基板對被複製物形成金屬配線的方法，基本上與先前的複製法相同。即，將複製用基板以對形成金屬配線材料之面與被複製物(晶圓)相對的狀態重疊，將複製用基板及被複製物加熱的同時，將金屬配線材料對複製物按壓，使金屬配線材料接合於被複製物之後，去除複製用基板者。此時在於本發明，係複製用基板的加熱溫度為80~200℃，被複製物的加熱溫度為80~300℃。
於本發明，可使被複製物的加熱溫度為80~300℃，較 先前以複製基板之複製步驟低溫。然後，關於該複製物的加熱溫度，以100~200℃為佳。為確實將金屬配線材料由複製用基板複製，且有效地預防因被複製物對複製基板的熱傳導之過熱。此外，複製用基板的加熱溫度以100~200℃更佳。
此外，於該複製法需要對金屬配線材料對被複製物的按壓，即需要加壓，但是該壓力，以金屬配線材料的降伏強度以下為佳。因為過大到超過降伏強度的加壓會使金屬配線材料變形，而無法確保既定的高度及形狀。具體而言，係對金屬配線材料的降伏強度，以0.1~1.5倍的加壓力為佳。
再者，於被複製物，於形成金屬配線的部位，預先，形成由構成複製用基板的金屬配線材料的金屬的金屬所組成的電極膜為佳。係為確實將金屬配線材料複製。但是，無須完全是相同組成。例如，金屬配線材料係由金粉與銀粉的混合體所組成時，將被複製物的電極膜以金構成即可。此外，該電極膜可為單層，亦可為複數層，只要表面由金屬配線材料同系的金屬組成即可。
如以上所說明，關於本發明之複製用基板，係即使將複製時的被複製物的加熱溫度為低溫亦可穩定地複製金屬配線材料。藉此，可預防複製基板的過熱而變形，此外，亦可防止被複製物的損傷。
第1實施形態：使用玻璃基板製造複製用基板，使用此對Si基板進行金屬配線之形成。
(複製用基板的製造)
首先，於玻璃基板(直徑尺寸100mm、4英寸、平均厚度500μm)，以濺鍍成膜Pt作為底層金屬膜。Pt膜之形成，係以逆濺鍍(Ar壓力2.8×10-1 Pa，RF輸出250W，濺鍍時間60秒)清潔玻離基板之後，使用Pt靶，以Ar壓力7.0×10-1 Pa，DC輸出500W，濺鍍時間115秒的條件成膜，形成厚度20nm的Pt膜。
接著，使用由Au粉末所組成的金屬糊料，於玻璃基板上形成金屬配線材料。在此使用的金屬糊料，係藉由濕式還原法所製造的純度99.95重量%金粉(平均粒徑：0.3μm)，作為有機溶劑混合酯醇(2,2,4-三甲基-3-羥五異丁基(C12 H24 O3 ))調製者。於金屬配線材料的形成，對玻璃基板塗佈光阻劑，使用通常的微影技術形成複數貫通孔。然後，將金屬糊料滴在光阻劑的表面上，藉由旋轉塗佈法於光阻劑的貫通孔內填充金糊料。接著，將糊料塗佈後的基板以保持在50℃以下的溫度的乾燥器乾燥，之後將抗蝕劑以有機溶劑剝離。抗蝕劑剝離之後，將基板放進電爐使金粉末燒結形成金屬配線材料。燒結溫度係以90℃加熱了1小時。於本實施形態，係於基板上將矩形的金屬配線材料(直徑尺寸50μm、高度25μm)以等間隔形成100個。
(對基板的複製)
使用於上述製造的複製用基板，對Si基板進行配線形成。圖1係說明其步驟之圖。如圖1，將於本實施形態所製造的複製用玻璃基板吸附設置於上部加熱區塊，將形成配線之Si基板(尺寸100mm、4英寸)設置於下部加熱區塊。於Si基板的表面，形成有作為電極膜之Ti/Pt/Au(厚度50nm/50nm/200nm)。於複製用基板及Si基板的設定之後，使上部加熱區塊下降，使複製用基板Si基板密著。然後將上部加熱區塊加熱為150℃，下部加熱區塊加熱為150℃，以加壓力30MPa按押上部加熱區塊，將該押壓狀態維持10分鐘。時間經過之後，使上部加熱區塊上升。再者，此時的加壓力，係設定於預先以150℃以下測定之金粉末燒結體的降伏強度(21MPa)之1.4倍。
上部加熱區塊上升後，確認複製用基板的金屬配線材料的殘存，但並無複製殘餘，所有的金屬配線材料被複製到Si基板上，確認到金屬配線的形成。此外，對於被複製之金屬配線，測定其各個高度，確認離散，而在±0.5μm的範圍內，確認到其形狀亦良好。
第2實施形態：在此，將構成複製基板上的金屬配線材料的金屬粉末(金屬糊料)、底層金屬膜的構成，作各種變更製造複製用基板，分別將此進行對Si基板形成金屬配線。在此，所製造之複製用基板的構成如下。該等的複製用基板的製造條件，在金屬粉末的種類及形成底層金屬之靶材材質(底層金屬膜為合金時，使用同一組成之合金靶)以外，與第1實施形態相同。
使用上述各種複製用基板，對Si基板進行金屬配線形成。關於該等試驗，將Si基板上的金屬膜變更一部分。此外，下部區塊的加熱溫度亦變更一部分。將該試驗結果示於表2。
由上表2可知，以各種的金屬粉末形成金屬配線材料時，或變更底層金屬膜時，均可以300℃以下的低溫確實地複製。但是，無論怎麼低溫，晶圓側的加熱溫度低時有複製率惡化的傾向(試驗No.18)。此外，使用粒徑較粗的金屬粉末時(試驗No.19)，即使提高晶圓側的加熱溫度，複製率還是較差。
第3實施形態：在此，加上構成複製基板上的金屬配線材料的金屬粉末(金屬糊料)、底層金屬膜、披覆層的構 成作各種變更製造複製用基板，分別將此進行對Si基板形成金屬配線。複製用基板的製造條件，在金屬粉末的種類及形成底層金屬之靶材材質(底層金屬膜為合金時，使用同一組成之合金靶)，基本以與第1實施形態相同的步驟。披覆層的形成，在第1實施形態的步驟，將金屬糊料塗佈．乾燥之後，於其上面形成披覆層，之後進行抗蝕劑的剝離將金屬粉末燒結。披覆層的形成，以鍍敷法的披覆層形成，係適宜使用市售的鍍液以推薦之條件成膜。此外，將披覆層以濺鍍法形成時，此亦使用市售的濺鍍靶材。所製造之複製用基板的構成如下所示。
使用上述各種複製用基板，對Si基板進行金屬配線形成。對於該等試驗，將Si基板上的金屬膜變更一部分。此外，下部區塊的加熱溫度亦變更一部分。圖2係說明該步驟之圖。將該試驗結果示於表4。
由上述表4可知，將金屬配線材料以各種的金屬粉末 形成時，或變更底層金屬膜時，均可以300℃以下的低溫確實地複製。但是，無論怎麼低溫，晶圓側的加熱溫度低時有複製率惡化的傾向(試驗No.48)。
此外，使用粒徑較粗的金屬粉末時(試驗No.49)，即使提高晶圓側的加熱溫度，複製率還是較差。再者，關於披覆層，厚度超過1μm時，可看到複製率的下降(試驗No.50、51)。
第4實施形態：在此對第3實施形態的試料No.39~51，以與第2實施形態同樣地進行形成凸塊。測定凸塊的剪強度(接合力)。在此設定2種加壓力(1MPa、5MPa)。此外，剪強度的測定係由接合測試器進行。將其結果示於表5。
由表5，考慮金粉末燒結體的降伏強度(21MPa)，則披 覆層的厚度超過1μm時(試驗No.6(試料No.44)與試驗No.10(試料No.48))，剪強度較20MPa小而強度不足。然後，使披覆層之厚度為1μm以下的試料均保持良好的強度。此可認為係如上所述，披覆層變厚則無法維持金屬配線材料的表面狀態，而降低作成燒結體的接合性。
[產業上的利用可能性]
本發明，在於對半導體晶圓、化合物晶圓、MEMS基板等的被複製物上的金屬配線形成，可提供較先前低溫的加工步驟，可貢獻於金屬配線的細微化，品質保持。
圖1係概略說明第1實施形態之金屬配線之形成步驟之圖。
圖2係概略說明第3實施形態之金屬配線之形成步驟之圖。

Claims (6)

  1. 一種金屬配線形成方法，將由基板、形成於上述基板上之至少一個金屬配線材料、及形成於上述基板與上述金屬配線材料之間的底層金屬膜所構成並用於將該金屬配線材料複製到被複製物的複製用基板與被複製物相對重疊，將上述複製用基板及上述被複製物加熱的同時，將上述複製用基板按壓使金屬配線材料與上述被複製物接合而複製之金屬配線之形成方法，上述複製用基板的上述金屬配線材料係燒結選自由純度99.9重量%以上，平均粒徑為0.01μm~1.0μm之金粉、銀粉、鉑粉、鈀粉、銅粉之一種以上的金屬粉末而成之成形體，上述底層金屬膜係金、銀、鉑、鈀、釕、銠、銥、鉻、鈦、鎢、鉭、鎳、銅、鋯之任一金屬或該等的合金所組成的，使上述複製用基板之加熱溫度為80~200℃，使上述被複製物的加熱溫度為80~300℃。
  2. 如申請專利範圍第1項所述的金屬配線形成方法，其中使按壓複製用基板時的壓力為金屬配線材料的降伏強度的0.1~1.5倍。
  3. 如申請專利範圍第1或2項所述的金屬配線形成方法，其中對被複製物形成包含構成複製用基板的金屬配線材料之金屬之金屬所組成的電極膜之後，將金屬配線材料複製。
  4. 如申請專利範圍第1項所述的金屬配線形成方法，其中將複製用基板的金屬配線材料，以選自由純度99.9重量%以上，平均粒徑0.01μm~1.0μm的金粉、銀粉、鉑粉、鈀粉、銅粉之一種以上的金屬粉末與有機溶劑所組成的金屬糊料塗佈、燒結而製造。
  5. 如申請專利範圍第1項所述的金屬配線形成方法，其中該複製用基板之底層金屬膜係由與金屬配線材料不同組成的金屬或合金所組成。
  6. 如申請專利範圍第1項所述的金屬配線形成方法，其中複製用基板的底層金屬膜之厚度為1~100nm。
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