TWI458804B - Adhesive sheet - Google Patents

Adhesive sheet Download PDF

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Publication number
TWI458804B
TWI458804B TW100121041A TW100121041A TWI458804B TW I458804 B TWI458804 B TW I458804B TW 100121041 A TW100121041 A TW 100121041A TW 100121041 A TW100121041 A TW 100121041A TW I458804 B TWI458804 B TW I458804B
Authority
TW
Taiwan
Prior art keywords
adhesive
adhesive layer
film
sheet
die
Prior art date
Application number
TW100121041A
Other languages
Chinese (zh)
Other versions
TW201200576A (en
Inventor
Yuuki Nakamura
Masanobu Miyahara
Youji Katayama
Tsuyoshi Tamaki
Keiichi Hatakeyama
Takuji Ikeya
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of TW201200576A publication Critical patent/TW201200576A/en
Application granted granted Critical
Publication of TWI458804B publication Critical patent/TWI458804B/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • H—ELECTRICITY
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
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    • C09J2301/20—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself
    • C09J2301/208—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself the adhesive layer being constituted by at least two or more adjacent or superposed adhesive layers, e.g. multilayer adhesive
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  • Dicing (AREA)
  • Die Bonding (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)

Description

黏著片Adhesive film

本發明是有關於一種黏著片。The present invention relates to an adhesive sheet.

半導體裝置的製造步驟之一包括將經過所需的前處理而形成有電路的半導體晶圓切斷分離成多個晶片的切割步驟。於該步驟中，將晶圓固定用的切割片貼合於被稱為環形框的圓環狀或矩形環狀的框上，在將半導體晶圓貼附於該切割片後，按每個電路切割半導體晶圓而獲得半導體晶片。繼而，進行利用黏合機的延伸步驟、晶片安裝步驟，進而進行打線接合步驟、成型步驟來製造半導體裝置。One of the manufacturing steps of the semiconductor device includes a cutting step of cutting and separating the semiconductor wafer on which the circuit is formed through the required pre-processing into a plurality of wafers. In this step, the dicing sheet for fixing the wafer is attached to a ring-shaped or rectangular ring-shaped frame called a ring frame, and after attaching the semiconductor wafer to the dicing sheet, each circuit is A semiconductor wafer is obtained by cutting a semiconductor wafer. Then, the semiconductor device is manufactured by performing the bonding step of the bonding machine, the wafer mounting step, and further performing the wire bonding step and the molding step.

近年來，提出有於製造半導體裝置時，使用將切割片及晶粒黏著膜一體化而成的晶粒黏著膜一體型片材的方法。晶粒黏著膜一體型片材是兼具作為切割片的功能、及將晶片固定於導線架或配線基板等上的黏著劑的功能的多層切割片，具有與先前的方法相比可縮短加工步驟等優點。In recent years, there has been proposed a method of using a die-bonding film-integrated sheet in which a dicing sheet and a die attach film are integrated in the production of a semiconductor device. The die-adhesive film-integrated sheet is a multilayer dicing sheet which functions as a dicing sheet and an adhesive for fixing a wafer to a lead frame or a wiring board, etc., and can shorten the processing steps as compared with the prior method. Etc.

然而，近年來，因半導體元件的高積體化、大晶片化、薄型化而導致切割後的晶片的拾取作業變得困難的情況增加。用於該些用途的切割片被要求微黏著於切割後的半導體晶片(例如Si晶片)-黏晶膜積層體。但是，若使切割片微黏著化，則存在對於環形框的黏著性亦變弱，於切割步驟中環形框自切割片剝離的情況。However, in recent years, the high-integration, large-wafer, and thinning of semiconductor elements have increased the difficulty in picking up wafers after dicing. The dicing sheet used for such applications is required to be slightly adhered to the diced semiconductor wafer (e.g., Si wafer)-mulet film laminate. However, if the dicing sheet is slightly adhered, the adhesion to the ring frame is also weakened, and the ring frame is peeled off from the dicing sheet in the dicing step.

因此，需要具有更高的切割性能的膠帶，業界已開發出一種於切割步驟中能夠以高黏著力保持晶圓(晶片)，於 拾取步驟中可藉由紫外線照射等來降低黏著力並可容易地拾取晶片的切割片(例如，參照下述專利文獻1、專利文獻2)。Therefore, there is a need for a tape having a higher cutting performance, and the industry has developed a wafer (wafer) capable of holding a wafer with high adhesion during the cutting step. In the pick-up step, the adhesive sheet can be lowered by ultraviolet irradiation or the like, and the dicing sheet of the wafer can be easily picked up (for example, refer to Patent Document 1 and Patent Document 2 below).

先前技術文獻Prior technical literature 專利文獻Patent literature

專利文獻1：日本專利特開昭60-196956號公報Patent Document 1: Japanese Patent Laid-Open Publication No. SHO 60-196956

專利文獻2：日本專利特開昭61-28572號公報Patent Document 2: Japanese Patent Laid-Open No. 61-28572

但是，專利文獻1的紫外線硬化型切割片是藉由僅對所期望的部分照射紫外線來降低該部分的黏著力，但有時難以僅對所期望的部分高精度地照射紫外線。因此，存在難以獲得使於切割步驟中確實地保持晶圓或環形框的保持力、及於切割後容易地自晶片剝離的剝離容易性較平衡地並存的黏著層的情況。However, in the ultraviolet curable dicing sheet of Patent Document 1, the adhesion of the portion is lowered by irradiating only the desired portion with ultraviolet rays, but it may be difficult to irradiate the ultraviolet ray with high precision only for the desired portion. Therefore, there is a case where it is difficult to obtain an adhesive layer which allows the holding force of the wafer or the ring frame to be reliably held in the cutting step and the ease of peeling which is easily peeled off from the wafer after the cutting.

另外，於專利文獻2中，由於黏晶膜僅積層於黏著性低的黏著層上，因此存在於切割步驟中黏晶膜的外周部分自黏著層剝離，貼附在黏晶膜上的晶片飛散的不良情況。Further, in Patent Document 2, since the adhesive film is only laminated on the adhesive layer having low adhesion, the outer peripheral portion of the adhesive film is peeled off from the adhesive layer in the cutting step, and the wafer attached to the adhesive film is scattered. Bad situation.

本發明是鑒於上述情況而完成的發明，其目的在於提供一種可維持拾取步驟中的黏晶膜及切割片間的剝離容易性，並可抑制切割步驟中的環形框的剝離及晶片的飛散的黏著片。The present invention has been made in view of the above circumstances, and an object of the invention is to provide an easiness of peeling between a die bond film and a dicing sheet in a picking step, and to suppress peeling of a ring frame and scattering of a wafer in a dicing step. Adhesive tablets.

即，本發明提供一種黏著片，其包括：基材；第1黏著層，配置於基材上；第2黏著層，配置於第1黏著層上，並且具有露出第1黏著層的開口；以及黏晶膜，配置於第 1黏著層的自上述開口露出的部分；且黏晶膜的外周的至少一部分與第2黏著層接觸。That is, the present invention provides an adhesive sheet comprising: a substrate; a first adhesive layer disposed on the substrate; and a second adhesive layer disposed on the first adhesive layer and having an opening exposing the first adhesive layer; Oxide film, configured in the first a portion of the adhesive layer exposed from the opening; and at least a portion of the outer periphery of the adhesive film is in contact with the second adhesive layer.

於本發明的黏著片中，藉由該片材具備不同於第1黏著層之第2黏著層，可個別地調整第1黏著層的黏著力與第2黏著層的黏著力。藉此，能夠以於拾取步驟中黏晶膜及切割片間的剝離變得容易的方式調整第1黏著層的黏著力，並以於切割步驟中環形框不自第2黏著層剝離的方式調整第2黏著層的黏著力。進而，於本發明的黏著片中，黏晶膜的外周的至少一部分與第2黏著層接觸，藉此黏晶膜的外周黏著於黏著力得到調整的第2黏著層上。藉此，於切割步驟中黏晶膜的外周部分成為剝離起點且黏晶膜剝離的情況得到抑制，因此可抑制晶片的飛散。In the adhesive sheet of the present invention, the sheet has a second adhesive layer different from the first adhesive layer, and the adhesive force of the first adhesive layer and the adhesive force of the second adhesive layer can be individually adjusted. Thereby, the adhesion of the first adhesive layer can be adjusted so that the peeling between the die bond film and the dicing sheet becomes easy in the pickup step, and the ring frame is not peeled off from the second adhesive layer in the cutting step. The adhesion of the second adhesive layer. Further, in the adhesive sheet of the present invention, at least a part of the outer periphery of the adhesive film is in contact with the second adhesive layer, whereby the outer periphery of the adhesive film is adhered to the second adhesive layer whose adhesion is adjusted. Thereby, in the dicing step, the outer peripheral portion of the die-bonding film becomes the peeling origin and the peeling of the die-peel film is suppressed, so that scattering of the wafer can be suppressed.

較佳為黏晶膜的外周的至少一部分與第2黏著層重疊。於此情況下，於切割步驟中黏晶膜的外周部分成為剝離起點且黏晶膜剝離的情況進一步得到抑制，因此可進一步抑制晶片的飛散。另外，根據此種構成，當將黏著片捲成輥狀時，藉由黏晶膜與第2黏著層的重疊部分而保護黏晶膜的中央部分，並可抑制捲痕轉印至黏晶膜上。It is preferable that at least a part of the outer periphery of the adhesive film overlaps with the second adhesive layer. In this case, in the dicing step, the outer peripheral portion of the die-bonding film becomes the peeling origin and the peeling of the die-peel film is further suppressed, so that scattering of the wafer can be further suppressed. Further, according to this configuration, when the adhesive sheet is wound into a roll shape, the central portion of the adhesive film is protected by the overlapping portion of the adhesive film and the second adhesive layer, and the transfer of the curl to the adhesive film can be suppressed. on.

另外，第2黏著層的內周的至少一部分與黏晶膜重疊亦較佳。於此種構成中，當將黏著片捲成輥狀時，亦藉由黏晶膜與第2黏著層的重疊部分而保護黏晶膜的中央部分，並可抑制捲痕轉印至黏晶膜上。Further, it is also preferable that at least a part of the inner circumference of the second adhesive layer overlaps with the die film. In such a configuration, when the adhesive sheet is wound into a roll shape, the central portion of the adhesive film is also protected by the overlapping portion of the adhesive film and the second adhesive layer, and the transfer of the curl to the adhesive film can be suppressed. on.

黏晶膜與第2黏著層的重疊部分的寬度較佳為0.1mm~25mm。The width of the overlapping portion of the adhesive film and the second adhesive layer is preferably from 0.1 mm to 25 mm.

本發明的黏著片是用於切割加工及黏晶加工。The adhesive sheet of the present invention is used for cutting processing and die bonding processing.

[發明的效果][Effects of the Invention]

根據本發明，提供一種可維持拾取步驟中的黏晶膜及切割片間的剝離容易性，並可抑制切割步驟中的環形框的剝離及晶片的飛散的黏著片。於本發明中，可容易地拾取經單片化的帶有黏晶膜的半導體晶片，藉此可提昇半導體裝置的良率。According to the present invention, there is provided an adhesive sheet which can maintain the easiness of peeling between the die-bonding film and the dicing sheet in the pick-up step, and can suppress peeling of the ring frame and scattering of the wafer in the dicing step. In the present invention, a singulated semiconductor wafer with a die-shaped film can be easily picked up, whereby the yield of the semiconductor device can be improved.

為讓本發明之上述和其他目的、特徵和優點能更明顯易懂，下文特舉較佳實施例，並配合所附圖式，作詳細說明如下。The above and other objects, features and advantages of the present invention will become more <RTIgt;

以下，視需要參照圖式對本發明的較佳的實施形態進行詳細說明。圖中，對同一或同等的構成要素標註同一符號，並適宜省略重複的說明。Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. In the drawings, the same or equivalent constituent elements are designated by the same reference numerals, and the repeated description is omitted as appropriate.

圖1是表示黏著片的一實施形態的平面圖，圖2是沿著圖1的II-II線的示意剖面圖。圖3是表示黏著片上貼附有半導體晶圓及環形框的積層物的示意剖面圖。Fig. 1 is a plan view showing an embodiment of an adhesive sheet, and Fig. 2 is a schematic cross-sectional view taken along line II-II of Fig. 1. 3 is a schematic cross-sectional view showing a laminate in which a semiconductor wafer and a ring frame are attached to an adhesive sheet.

圖1、圖2所示的半導體裝置製造用黏著片(晶粒黏著膜一體型片材)1包括：長條的基材膜10、長條的黏著層(第1黏著層)20、黏著層(第2黏著層)30、以及黏晶膜40。如圖3所示，於半導體裝置製造用黏著片1上配置環形框(切割環)50與半導體晶圓60。The adhesive sheet for manufacturing a semiconductor device (the die-adhesive film-integrated sheet) 1 shown in Fig. 1 and Fig. 2 includes a long base film 10, a long adhesive layer (first adhesive layer) 20, and an adhesive layer. (Second adhesive layer) 30 and the adhesive film 40. As shown in FIG. 3, an annular frame (cut ring) 50 and a semiconductor wafer 60 are placed on the adhesive sheet 1 for semiconductor device manufacturing.

作為基材膜10，例如可使用：聚乙烯膜、聚丙烯膜、聚氯乙烯膜、聚對苯二甲酸乙二酯膜、乙烯-乙酸乙烯酯共 聚物膜、離子聚合物樹脂膜等。基材膜10的厚度較佳為例如15μm~200μm左右。As the base film 10, for example, a polyethylene film, a polypropylene film, a polyvinyl chloride film, a polyethylene terephthalate film, or ethylene-vinyl acetate can be used. Polymer film, ionic polymer resin film, and the like. The thickness of the base film 10 is preferably, for example, about 15 μm to 200 μm.

黏著層20是以覆蓋基材膜10的一個主面的整體的方式配置。黏著層20的厚度較佳為例如5μm~50μm左右。作為構成黏著層20的黏著劑，例如可使用：丙烯酸系黏著劑、橡膠系黏著劑、聚矽氧系黏著劑等。The adhesive layer 20 is disposed so as to cover the entirety of one main surface of the base film 10. The thickness of the adhesive layer 20 is preferably, for example, about 5 μm to 50 μm. As the adhesive constituting the adhesive layer 20, for example, an acrylic adhesive, a rubber adhesive, a polyoxygen adhesive, or the like can be used.

黏著層20是於拾取步驟中可容易地自黏晶膜40剝離的弱黏著性的感壓黏著劑層。黏著層20與黏晶膜40的黏著力較佳為0.6N/25mm以下，更佳為0.4N/25mm以下，進而更佳為0.3N/25mm以下。若黏著層20具有此種黏著力，則於拾取步驟中可在黏著層20及黏晶膜40間容易地進行剝離。黏著層20的黏著力可藉由使用例如Orientec製造的「Tensilon拉伸強度試驗機RTA-100型」或與其相似的試驗機於垂直方向(90°剝離)上以200mm/min的速度剝離時的剝離力來測定。The adhesive layer 20 is a weakly adhesive pressure-sensitive adhesive layer which can be easily peeled off from the adhesive film 40 in the pick-up step. The adhesive force of the adhesive layer 20 and the adhesive film 40 is preferably 0.6 N/25 mm or less, more preferably 0.4 N/25 mm or less, and still more preferably 0.3 N/25 mm or less. If the adhesive layer 20 has such an adhesive force, peeling can be easily performed between the adhesive layer 20 and the adhesive film 40 in the pickup step. The adhesive force of the adhesive layer 20 can be peeled off at a speed of 200 mm/min in a vertical direction (90° peeling) by using, for example, a "Tensilon tensile strength testing machine RTA-100 type" manufactured by Orientec or a similar testing machine. Peel force is measured.

黏著層30是沿著基材膜10的長邊方向於黏著層20上隔開規定的間隔而配置有多個。黏著層30是配置於黏著層20上的環形框50的預定貼附區域。The adhesive layer 30 is disposed in plural along the longitudinal direction of the base film 10 at a predetermined interval on the adhesive layer 20. The adhesive layer 30 is a predetermined attachment region of the ring frame 50 disposed on the adhesive layer 20.

各黏著層30例如呈圓環狀，於各黏著層30的中央部，自黏著層30的表面至背面設置有剖面為圓形狀的開口30a。黏著層20的自開口30a露出的部分25成為黏晶膜40的預定貼附區域。黏著層30的開口30a的直徑較佳為半導體晶圓60的晶圓直徑以上，更佳為大於半導體晶圓60的晶圓直徑。另外，黏著層30的開口30a的直徑較佳 為環形框50的開口50a的內徑尺寸以下，更佳為小於環形框50的開口50a的內徑尺寸。黏著層30的開口30a的直徑例如為210mm左右。黏著層30的厚度較佳為例如5μm~30μm左右。Each of the adhesive layers 30 has an annular shape, for example, and an opening 30a having a circular cross section is provided in the central portion of each of the adhesive layers 30 from the surface to the back surface of the adhesive layer 30. The portion 25 of the adhesive layer 20 exposed from the opening 30a becomes a predetermined attachment region of the adhesive film 40. The diameter of the opening 30a of the adhesive layer 30 is preferably greater than the wafer diameter of the semiconductor wafer 60, and more preferably greater than the wafer diameter of the semiconductor wafer 60. In addition, the diameter of the opening 30a of the adhesive layer 30 is preferably It is below the inner diameter of the opening 50a of the annular frame 50, and more preferably smaller than the inner diameter of the opening 50a of the annular frame 50. The diameter of the opening 30a of the adhesive layer 30 is, for example, about 210 mm. The thickness of the adhesive layer 30 is preferably, for example, about 5 μm to 30 μm.

黏著層30是具有於切割步驟中可確實地保持環形框50的黏著性的環形框固定用的強黏著性層。作為構成黏著層30的黏著劑，例如可使用丙烯酸系黏著劑、橡膠系黏著劑、聚矽氧系黏著劑等。將黏著層30的黏著力調整為大於黏著層20的黏著力。The adhesive layer 30 is a strong adhesive layer for fixing an annular frame which can reliably maintain the adhesiveness of the ring frame 50 in the cutting step. As the adhesive constituting the adhesive layer 30, for example, an acrylic adhesive, a rubber-based adhesive, a polyoxygen-based adhesive, or the like can be used. The adhesive force of the adhesive layer 30 is adjusted to be larger than the adhesive force of the adhesive layer 20.

黏著層30與環形框50的黏著力較佳為小於黏著層30與黏著層20的黏著力，且為0.6N/25mm以上。黏著層30與環形框50的黏著力更佳為0.8N/25mm以上，進而更佳為1.0N/25mm以上。若黏著層30具有此種黏著力，則於切割步驟中環形框50自黏著層30剝離的情況進一步得到抑制。黏著層30的黏著力可藉由使用例如Orientec製造的「Tensilon拉伸強度試驗機RTA-100型」或與其相似的試驗機於垂直方向(90°剝離)上以200mm/min的速度剝離時的剝離力來測定。The adhesive force of the adhesive layer 30 and the annular frame 50 is preferably smaller than the adhesive force of the adhesive layer 30 and the adhesive layer 20, and is 0.6 N/25 mm or more. The adhesive force of the adhesive layer 30 and the ring frame 50 is preferably 0.8 N/25 mm or more, and more preferably 1.0 N/25 mm or more. If the adhesive layer 30 has such an adhesive force, the peeling of the annular frame 50 from the adhesive layer 30 in the cutting step is further suppressed. The adhesive force of the adhesive layer 30 can be peeled off at a speed of 200 mm/min in a vertical direction (90° peeling) by using, for example, a "Tensilon tensile strength testing machine RTA-100 type" manufactured by Orientec or a similar testing machine. Peel force is measured.

於黏著層20的短邊方向的兩端部，以沿著黏著層30的形狀的方式遠離黏著層30而配置有黏著層32。黏著層32是由與黏著層30相同的黏著劑構成。The adhesive layer 32 is disposed at both end portions in the short-side direction of the adhesive layer 20 so as to be apart from the adhesive layer 30 along the shape of the adhesive layer 30. The adhesive layer 32 is composed of the same adhesive as the adhesive layer 30.

黏晶膜40例如呈圓形狀。黏晶膜40的厚度較佳為例如1μm~100μm左右。黏晶膜40含有例如熱硬化性成分及/或熱塑性樹脂、以及填料。熱硬化性成分是藉由加熱 而交聯後可形成硬化體的成分，例如含有熱硬化性樹脂，並任意地含有該熱硬化性樹脂的硬化劑。作為熱硬化性樹脂，可使用先前公知的熱硬化性樹脂，並無特別限制，其中，就作為半導體周邊材料的便利性(容易獲得高純度品、品種多、易於控制反應性)的觀點而言，較佳為環氧樹脂、以及1分子中具有至少2個熱硬化性醯亞胺基的醯亞胺化合物。環氧樹脂通常與環氧樹脂硬化劑併用。The die-bonding film 40 has, for example, a circular shape. The thickness of the die-bonding film 40 is preferably, for example, about 1 μm to 100 μm. The die-bonding film 40 contains, for example, a thermosetting component and/or a thermoplastic resin, and a filler. Thermosetting component is heated by heating On the other hand, after crosslinking, a component of a hardened body can be formed, for example, a thermosetting resin is contained, and a hardener of the thermosetting resin is optionally contained. As the thermosetting resin, a conventionally known thermosetting resin can be used, and it is not particularly limited as long as it is a convenience of a semiconductor peripheral material (a high-purity product is easily obtained, a variety is large, and reactivity is easily controlled). It is preferably an epoxy resin and a quinone imine compound having at least two thermosetting quinone imine groups in one molecule. Epoxy resins are usually used in combination with an epoxy resin hardener.

環氧樹脂較佳為具有2個以上環氧基的化合物。作為環氧樹脂，就硬化性或硬化物特性的觀點而言，較佳為酚的縮水甘油醚型的環氧樹脂。作為酚的縮水甘油醚型的環氧樹脂，例如可列舉：雙酚A、雙酚AD、雙酚S、雙酚F或鹵化雙酚A與表氯醇的縮合物，苯酚酚醛清漆樹脂的縮水甘油醚，甲酚酚醛清漆樹脂的縮水甘油醚，以及雙酚A酚醛清漆樹脂的縮水甘油醚。該些之中，就硬化物的交聯密度高，可提高膜的加熱時的黏著強度的觀點而言，較佳為酚醛清漆型環氧樹脂(甲酚酚醛清漆樹脂的縮水甘油醚及苯酚酚醛清漆樹脂的縮水甘油醚等)。該些可單獨使用一種、或者將多種加以組合來使用。The epoxy resin is preferably a compound having two or more epoxy groups. The epoxy resin is preferably a glycidyl ether type epoxy resin of phenol from the viewpoint of curability or cured product properties. Examples of the glycidyl ether type epoxy resin of phenol include bisphenol A, bisphenol AD, bisphenol S, bisphenol F or a condensate of halogenated bisphenol A and epichlorohydrin, and shrinkage of phenol novolak resin. Glycidyl ether, glycidyl ether of cresol novolac resin, and glycidyl ether of bisphenol A novolac resin. Among these, a novolac type epoxy resin (glycidyl ether of cresol novolak resin and phenol novolac) is preferred from the viewpoint of high crosslinking density of the cured product and improved adhesion strength during heating of the film. Glycidyl ether of varnish resin, etc.). These may be used alone or in combination of plural kinds.

作為環氧樹脂硬化劑，例如可列舉：酚系化合物、脂肪族胺、脂環族胺、芳香族聚胺、聚醯胺、脂肪族酸酐、脂環族酸酐、芳香族酸酐、二氰基二醯胺、有機酸二醯肼、三氟化硼胺錯合物、咪唑類、以及三級胺。該些之中，較佳為酚系化合物，其中，特佳為具有2個以上酚性羥基的酚系化合物。更具體而言，較佳為萘酚酚醛清漆樹脂及三 苯酚酚醛清漆樹脂。若將該些酚系化合物用作環氧樹脂硬化劑，則可有效地減少用於封裝組合的加熱時的晶片表面及裝置的污染、或者成為臭氣的原因的逸氣的產生。Examples of the epoxy resin curing agent include a phenol compound, an aliphatic amine, an alicyclic amine, an aromatic polyamine, a polyamine, an aliphatic acid anhydride, an alicyclic acid anhydride, an aromatic acid anhydride, and a dicyano group. Indoleamine, organic acid dioxime, boron trifluoride amine complex, imidazole, and tertiary amine. Among these, a phenol type compound is preferable, and among them, a phenol type compound having two or more phenolic hydroxyl groups is particularly preferable. More specifically, a naphthol novolac resin and three are preferred. Phenolic novolac resin. When these phenolic compounds are used as an epoxy resin hardener, it is possible to effectively reduce the contamination of the wafer surface and the device during heating of the package combination or the generation of outgas which is a cause of odor.

作為熱塑性樹脂，例如可列舉：聚醯亞胺樹脂、聚醯胺醯亞胺樹脂、苯氧樹脂、丙烯酸樹脂、聚醯胺樹脂及胺基甲酸酯樹脂。該些可單獨使用一種、或者將多種加以組合來使用。Examples of the thermoplastic resin include a polyimine resin, a polyamide amide resin, a phenoxy resin, an acrylic resin, a polyamide resin, and a urethane resin. These may be used alone or in combination of plural kinds.

填料較佳為無機填料。更具體而言，較佳為包含選自由氫氧化鋁、氫氧化鎂、碳酸鈣、碳酸鎂、矽酸鈣、矽酸鎂、氧化鈣、氧化鎂、氧化鋁、氮化鋁、硼酸鋁晶鬚、氮化硼、結晶性二氧化矽、非晶性二氧化矽及銻氧化物所組成的組群中的至少一種無機材料的無機填料。該些之中，為了提昇導熱性，較佳為氧化鋁、氮化鋁、氮化硼、結晶性二氧化矽及非晶性二氧化矽。為了調整熔融黏度或賦予搖變性，較佳為氫氧化鋁、氫氧化鎂、碳酸鈣、碳酸鎂、矽酸鈣、矽酸鎂、氧化鈣、氧化鎂、氧化鋁、結晶性二氧化矽及非晶性二氧化矽。另外，為了提昇耐濕性，較佳為氧化鋁、二氧化矽、氫氧化鋁及銻氧化物。該些可單獨使用一種、或者將多種加以組合來使用。The filler is preferably an inorganic filler. More specifically, it preferably comprises a whisker selected from the group consisting of aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium citrate, magnesium citrate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, and aluminum borate. An inorganic filler of at least one inorganic material in a group consisting of boron nitride, crystalline cerium oxide, amorphous cerium oxide, and cerium oxide. Among these, in order to improve thermal conductivity, alumina, aluminum nitride, boron nitride, crystalline cerium oxide, and amorphous cerium oxide are preferable. In order to adjust the melt viscosity or impart shake, it is preferably aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, crystalline cerium oxide and non- Crystalline cerium oxide. Further, in order to improve moisture resistance, alumina, cerium oxide, aluminum hydroxide and cerium oxide are preferred. These may be used alone or in combination of plural kinds.

黏晶膜40是以與開口30a形成同心的方式配置於黏著層30的開口30a內，並覆蓋黏著層20的自開口30a露出的部分25的整體。另外，黏晶膜40的外周部分40a自開口30a伸出，並以與黏著層30的表面的內周側的緣部接觸的狀態與黏著層30重疊。即，黏晶膜40具有與黏著層30 重疊的外周部分40a、及不與黏著層30重疊的中央部分40b。黏晶膜40若外周的至少一部分與黏著層30接觸，則可抑制切割步驟中的黏晶膜40的剝離，但就進一步抑制切割步驟中的剝離的觀點而言，較佳為外周部分40a的至少一部分與黏著層30重疊，更佳為整個外周部分40a沿著黏晶膜40的外周與黏著層30重疊。The die-bonding film 40 is disposed in the opening 30a of the adhesive layer 30 so as to be concentric with the opening 30a, and covers the entire portion 25 of the adhesive layer 20 exposed from the opening 30a. Further, the outer peripheral portion 40a of the adhesive film 40 protrudes from the opening 30a and overlaps the adhesive layer 30 in a state of being in contact with the edge portion on the inner peripheral side of the surface of the adhesive layer 30. That is, the adhesive film 40 has the adhesive layer 30 The overlapping outer peripheral portion 40a and the central portion 40b that do not overlap the adhesive layer 30. When at least a part of the outer periphery of the adhesive film 40 is in contact with the adhesive layer 30, peeling of the adhesive film 40 in the dicing step can be suppressed, but from the viewpoint of further suppressing peeling in the dicing step, the outer peripheral portion 40a is preferable. At least a portion overlaps with the adhesive layer 30, and it is more preferable that the entire outer peripheral portion 40a overlaps the adhesive layer 30 along the outer periphery of the adhesive film 40.

黏著層30與黏晶膜40的重疊範圍(寬度)較佳為0.1mm~25mm，更佳為0.5mm~15mm，進而更佳為1.0mm~10mm。若黏晶膜40的重疊範圍為此種範圍，則於層壓步驟中，可僅將黏晶膜40的與黏著層20接觸的部分(上述中央部分40b)貼附於半導體晶圓60上，且於切割步驟中黏晶膜40的外周部分40a成為自黏著層30剝離的剝離起點的情況進一步得到抑制，因此半導體晶片飛散的情況進一步得到抑制。The overlapping range (width) of the adhesive layer 30 and the adhesive film 40 is preferably from 0.1 mm to 25 mm, more preferably from 0.5 mm to 15 mm, and still more preferably from 1.0 mm to 10 mm. If the overlapping range of the die-bonding film 40 is such a range, only the portion of the die-bonding film 40 that is in contact with the adhesive layer 20 (the central portion 40b) may be attached to the semiconductor wafer 60 in the laminating step. Further, in the dicing step, the outer peripheral portion 40a of the adhesive film 40 is further prevented from being peeled off from the adhesive layer 30, and thus the semiconductor wafer is scattered and further suppressed.

黏著層30與黏晶膜40的黏著力較佳為0.8N/25mm以上，更佳為1.0N/25mm以上，進而更佳為1.2N/25mm以上。若黏著層30具有此種黏著力，則於切割步驟中黏晶膜40自黏著層30剝離的情況進一步得到抑制。黏著層30的黏著力可藉由使用例如Orientec製造的「Tensilon拉伸強度試驗機RTA-100型」或與其相似的試驗機於垂直方向(90°剝離)上以200mm/min的速度剝離時的剝離力來測定。The adhesive force of the adhesive layer 30 and the adhesive film 40 is preferably 0.8 N/25 mm or more, more preferably 1.0 N/25 mm or more, and still more preferably 1.2 N/25 mm or more. If the adhesive layer 30 has such an adhesive force, the peeling of the adhesive film 40 from the adhesive layer 30 in the cutting step is further suppressed. The adhesive force of the adhesive layer 30 can be peeled off at a speed of 200 mm/min in a vertical direction (90° peeling) by using, for example, a "Tensilon tensile strength testing machine RTA-100 type" manufactured by Orientec or a similar testing machine. Peel force is measured.

環形框50通常為金屬製或塑膠製的成形體。環形框50例如呈大致圓環狀，於環形框50的外周的一部分形成 有引導用的平坦切口部(未圖示)。環形框50於中央部具有開口50a。環形框50的開口50a的內徑尺寸(直徑)當然略大於被切割的半導體晶圓60的晶圓直徑，且將其調整為黏著層30的開口30a的直徑以上。再者，環形框50的形狀並不限定於圓環狀，可使用自先前以來所使用的各種形狀(例如矩形環狀)。The ring frame 50 is usually a molded body made of metal or plastic. The ring frame 50 is, for example, substantially annular, and is formed on a part of the outer circumference of the ring frame 50. There is a flat cutout portion (not shown) for guiding. The ring frame 50 has an opening 50a at the center. The inner diameter (diameter) of the opening 50a of the ring frame 50 is of course slightly larger than the wafer diameter of the semiconductor wafer 60 to be cut, and is adjusted to be larger than the diameter of the opening 30a of the adhesive layer 30. Further, the shape of the ring frame 50 is not limited to an annular shape, and various shapes (for example, a rectangular ring shape) used from the past may be used.

環形框50是以開口50a與開口30a形成同心的方式配置於黏著層30上。環形框50是不與黏晶膜40的與黏著層30的重疊部分(外周部分40a)重疊而配置。The ring frame 50 is disposed on the adhesive layer 30 such that the opening 50a is concentric with the opening 30a. The ring frame 50 is disposed so as not to overlap with the overlapping portion (outer peripheral portion 40a) of the adhesive film 40 with the adhesive layer 30.

半導體晶圓60是不與黏著層30及黏晶膜40的外周部分40a重疊，而配置於黏晶膜40的中央部分40b。於半導體晶圓60上，經過所需的前處理而形成有電路。於切割步驟中，按每個電路將半導體晶圓60單片化，從而獲得半導體晶片。The semiconductor wafer 60 is disposed not on the adhesive layer 30 and the outer peripheral portion 40a of the die bond film 40, and is disposed in the central portion 40b of the die bond film 40. On the semiconductor wafer 60, circuitry is formed through the desired pre-processing. In the dicing step, the semiconductor wafer 60 is singulated in each circuit to obtain a semiconductor wafer.

半導體裝置製造用黏著片1是用於切割加工及黏晶加工。於半導體裝置製造用黏著片1中，藉由該片材具備不同於黏著層20之黏著層30，可個別地調整黏著層20的黏著力與黏著層30的黏著力。藉此，能夠以於拾取步驟中黏晶膜40及切割片的黏著層20之間的剝離變得容易的方式調整黏著層20的黏著力，並以於切割步驟中環形框50不自黏著層30剝離的方式調整黏著層30的黏著力。進而，於半導體裝置製造用黏著片1中，黏晶膜40的外周部分40a與黏著層30接觸，藉此外周部分40a黏著於黏著力得到調整的黏著層30上。藉此，於切割步驟中黏晶膜40的 外周部分40a成為剝離起點且黏晶膜40剝離的情況得到抑制，因此可抑制晶片的飛散。進而，於半導體裝置製造用黏著片1中，黏晶膜40的外周部分40a與黏著層30重疊，藉此於切割步驟中黏晶膜40剝離的情況進一步得到抑制，因此可進一步抑制晶片的飛散。The adhesive sheet 1 for semiconductor device manufacturing is used for cutting processing and die bonding processing. In the adhesive sheet 1 for manufacturing a semiconductor device, by providing the adhesive layer 30 different from the adhesive layer 20, the adhesive force of the adhesive layer 20 and the adhesive force of the adhesive layer 30 can be individually adjusted. Thereby, the adhesion of the adhesive layer 20 can be adjusted in such a manner that the peeling between the adhesive film 40 and the adhesive layer 20 of the dicing sheet becomes easy in the pickup step, and the annular frame 50 is not self-adhesive in the cutting step. The peeling force of the adhesive layer 30 is adjusted by the 30 peeling method. Further, in the adhesive sheet 1 for semiconductor device manufacturing, the outer peripheral portion 40a of the adhesive film 40 is in contact with the adhesive layer 30, whereby the outer peripheral portion 40a is adhered to the adhesive layer 30 whose adhesion is adjusted. Thereby, in the cutting step, the die film 40 Since the outer peripheral portion 40a serves as a peeling starting point and the peeling of the die-bonding film 40 is suppressed, scattering of the wafer can be suppressed. Further, in the adhesive sheet 1 for manufacturing a semiconductor device, the outer peripheral portion 40a of the adhesive film 40 is overlapped with the adhesive layer 30, whereby the peeling of the adhesive film 40 in the dicing step is further suppressed, so that the scattering of the wafer can be further suppressed. .

其次，對使用半導體裝置製造用黏著片1的半導體裝置的製造方法進行說明。圖4是表示利用切割刀片切割半導體晶圓的步驟的示意剖面圖。圖5是表示拾取經單片化的帶有黏晶膜的半導體晶片的步驟的示意剖面圖。圖6是表示使用經拾取的帶有黏晶膜的半導體晶片的半導體裝置的示意剖面圖。Next, a method of manufacturing a semiconductor device using the adhesive sheet 1 for semiconductor device manufacturing will be described. 4 is a schematic cross-sectional view showing a step of cutting a semiconductor wafer using a dicing blade. Figure 5 is a schematic cross-sectional view showing the step of picking up a singulated semiconductor wafer with a die-bonding film. Figure 6 is a schematic cross-sectional view showing a semiconductor device using a picked semiconductor wafer with a die-bonding film.

於半導體裝置製造用黏著片1上積層有半導體晶圓60的積層體可使用積層有黏晶膜40與基材層的黏著膜、以及將黏晶膜40與黏著層(黏著層20及黏著層30)及基材層以該順序積層而成的黏著膜的任一者而獲得。The laminated body in which the semiconductor wafer 60 is laminated on the adhesive sheet 1 for semiconductor device manufacturing can use an adhesive film in which the adhesive film 40 and the base material layer are laminated, and the adhesive film 40 and the adhesive layer (adhesive layer 20 and adhesive layer). 30) and the base material layer is obtained by any of the adhesive films laminated in this order.

當使用積層有黏晶膜40與基材層的黏著膜時，例如可使用以下的(1)、(2)所示的任一種方法。When an adhesive film in which the adhesive film 40 and the base material layer are laminated is used, for example, any of the following methods (1) and (2) can be used.

(1)首先，使黏著膜的黏晶膜40與半導體晶圓60貼合。其次，剝離黏著膜的基材層，使黏晶膜40與積層有黏著層(黏著層20及黏著層30)及基材層的切割膠帶的黏著層貼合。(1) First, the adhesive film 40 of the adhesive film is bonded to the semiconductor wafer 60. Next, the base material layer of the adhesive film is peeled off, and the adhesive film 40 is bonded to the adhesive layer (adhesive layer 20 and adhesive layer 30) and the adhesive layer of the dicing tape of the base material layer.

(2)首先，使黏著膜的黏晶膜40與積層有黏著層(黏著層20及黏著層30)及基材層的切割膠帶的黏著層貼合。其次，剝離黏著膜的基材層，使黏晶膜40與半導體晶圓 60貼合。(2) First, the adhesive film 40 of the adhesive film is bonded to the adhesive layer (adhesive layer 20 and adhesive layer 30) in which the adhesive layer is laminated, and the adhesive layer of the dicing tape of the base material layer. Secondly, the base layer of the adhesive film is peeled off to make the adhesive film 40 and the semiconductor wafer 60 fits.

當使用將黏晶膜40與黏著層及基材層以該順序積層而成的黏著膜時，使黏著膜的黏晶膜40與半導體晶圓60貼合，藉此可獲得於半導體裝置製造用黏著片1上積層有半導體晶圓60的積層體。When an adhesive film in which the adhesive film 40 and the adhesive layer and the base material layer are laminated in this order is used, the adhesive film 40 of the adhesive film is bonded to the semiconductor wafer 60, whereby the semiconductor device can be used for semiconductor device manufacturing. A laminate of the semiconductor wafer 60 is laminated on the adhesive sheet 1.

再者，於上述任一種方法中，黏著層(黏著層20及黏著層30)與黏晶膜40是以使黏晶膜40的外周部分40a的至少一部分與黏著層30接觸的方式積層，較佳為以使黏晶膜40的外周部分40a的至少一部分與黏著層30重疊的方式積層。另外，半導體晶圓60是以不與黏著層30或黏晶膜40的外周部分40a重疊的方式配置。Furthermore, in any of the above methods, the adhesive layer (adhesive layer 20 and adhesive layer 30) and the adhesive film 40 are laminated such that at least a part of the outer peripheral portion 40a of the adhesive film 40 is in contact with the adhesive layer 30. It is preferable to laminate the at least a part of the outer peripheral portion 40a of the adhesive film 40 so as to overlap the adhesive layer 30. Further, the semiconductor wafer 60 is disposed so as not to overlap the adhesive layer 30 or the outer peripheral portion 40a of the die film 40.

於藉由上述任一種方法而獲得在半導體裝置製造用黏著片1上積層有半導體晶圓60的積層體後，將環形框50配置於半導體裝置製造用黏著片1的黏著層30上。After the laminated body in which the semiconductor wafer 60 is laminated on the adhesive sheet 1 for semiconductor device manufacturing is obtained by any of the above methods, the ring frame 50 is placed on the adhesive layer 30 of the adhesive sheet 1 for semiconductor device manufacturing.

其次，如圖4所示，利用切斷裝置(切片機)的旋轉刀70切斷上述積層體，獲得黏晶膜45黏著於半導體晶片65而成的所期望的大小的帶有黏著膜的半導體晶片80。於切割步驟中，可使用完全切斷黏著膜的全切法，亦可使用不完全切斷黏著膜而殘留一部分的方法(半切法)。Next, as shown in FIG. 4, the laminated body is cut by a rotary blade 70 of a cutting device (microtome) to obtain a semiconductor having an adhesive film of a desired size in which the adhesive film 45 is adhered to the semiconductor wafer 65. Wafer 80. In the cutting step, a full cut method in which the adhesive film is completely cut off may be used, or a method in which a part of the adhesive film is not completely cut off may be used (half-cut method).

切斷半導體晶圓60時所使用的切片機或旋轉刀(刀片)可使用一般所市售者。作為切片機，例如可使用DISCO股份有限公司製造的全自動切割機6000系列或半自動切割機3000系列等。作為刀片，例如可使用DISCO股份有限公司製造的切割刀片NBC-ZH05系列或NBC-ZH系列 等。A microtome or a rotary blade (blade) used when cutting the semiconductor wafer 60 can be generally used. As the slicer, for example, a fully automatic cutter 6000 series manufactured by DISCO Co., Ltd. or a semi-automatic cutter 3000 series can be used. As the blade, for example, a cutting blade NBC-ZH05 series or NBC-ZH series manufactured by DISCO Corporation can be used. Wait.

另外，於切斷半導體裝置製造用黏著片1與半導體晶圓60的積層物的步驟中，不僅可使用例如DISCO股份有限公司製造的全自動切割機6000系列等的旋轉刀，而且亦可使用例如DISCO股份有限公司製造的全自動雷射切割機7000系列等的雷射。In the step of cutting the laminate of the adhesive sheet 1 for semiconductor device manufacturing and the semiconductor wafer 60, for example, a rotary knife such as a fully automatic cutter 6000 series manufactured by DISCO Co., Ltd. can be used, and for example, Lasers such as the fully automated laser cutting machine 7000 series manufactured by DISCO.

於切割步驟後，如圖5所示，在黏著層20與黏晶膜45的界面進行剝離，並拾取帶有黏著膜的半導體晶片80。然後，如圖6所示，將所拾取的帶有黏著膜的半導體晶片80安裝於支撐基材85上。After the dicing step, as shown in FIG. 5, the interface between the adhesive layer 20 and the die-bonding film 45 is peeled off, and the semiconductor wafer 80 with the adhesive film is picked up. Then, as shown in FIG. 6, the picked-up semiconductor wafer 80 with an adhesive film is mounted on the support substrate 85.

其後，使帶有黏著膜的半導體晶片80的半導體晶片65經由線90而與支撐基材85上的外部接續端子(未圖示)連接。然後，藉由密封樹脂層95來密封包含半導體晶片65的積層體，從而獲得圖6所示的半導體裝置100。Thereafter, the semiconductor wafer 65 of the semiconductor wafer 80 with the adhesive film is connected to an external connection terminal (not shown) on the support substrate 85 via the wire 90. Then, the laminate including the semiconductor wafer 65 is sealed by the sealing resin layer 95, whereby the semiconductor device 100 shown in FIG. 6 is obtained.

再者，本發明並不限定於上述實施形態。例如，黏著層30並不限定於圓環狀，亦可為矩形環狀。於此情況下，通常使用具有矩形環狀的環形框，並使用矩形狀的黏晶膜。另外，黏著層30並不限定於在黏著層20上配置有多個，只要對應於半導體裝置100的製造個數而在黏著層20上至少配置一個即可。Furthermore, the present invention is not limited to the above embodiment. For example, the adhesive layer 30 is not limited to an annular shape, and may have a rectangular ring shape. In this case, a ring frame having a rectangular ring shape is generally used, and a rectangular die-shaped film is used. Further, the adhesive layer 30 is not limited to being disposed on the adhesive layer 20, and may be disposed on at least one of the adhesive layers 20 in accordance with the number of manufactured semiconductor devices 100.

實例1Example 1

以下，藉由實例來詳細地說明本發明，但本發明並不受該些實例限制。Hereinafter, the present invention will be described in detail by way of examples, but the invention is not limited thereto.

1.黏晶膜的製作1. Production of adhesive film

於具備溫度計、攪拌機及氯化鈣管的500ml的四口燒瓶中，取醚二胺2000(BASF公司製造)(0.02莫耳)、1,12-二胺基十二烷(0.08莫耳)及N-甲基-2-吡咯啶酮150g，在60℃下進行攪拌來使二胺溶解。於使二胺溶解後，一點點地添加2,2-雙[4-(3,4-二羧基苯氧基)苯基]丙烷二酐(0.1莫耳)。於60℃下反應1小時後，一面吹入N2 氣體一面於170℃下進行加熱，將水與溶劑的一部分共沸去除。獲得該反應液作為聚醯亞胺樹脂的N-甲基-2-吡咯啶酮(N-Methyl-2-Pyrrolidone，NMP)溶液。In a 500 ml four-necked flask equipped with a thermometer, a stirrer, and a calcium chloride tube, an ether diamine 2000 (manufactured by BASF Corporation) (0.02 mol), 1,12-diaminododecane (0.08 mol), and 150 g of N-methyl-2-pyrrolidone was stirred at 60 ° C to dissolve the diamine. After dissolving the diamine, 2,2-bis[4-(3,4-dicarboxyphenoxy)phenyl]propane dianhydride (0.1 mol) was added little by little. After reacting at 60 ° C for 1 hour, the mixture was heated at 170 ° C while blowing N 2 gas to azeotropically remove water and a part of the solvent. The reaction solution was obtained as a solution of N-methyl-2-pyrrolidone (NMP) of a polyimine resin.

向上述所獲得的聚醯亞胺樹脂的NMP溶液(含有100質量份的聚醯亞胺樹脂)中添加甲酚酚醛清漆型環氧樹脂(東都化成製造)4質量份、4,4’-[1-[4-[1-(4-羥基苯基)-1-甲基乙基]苯基]次乙基]雙酚(本州化學製造)2質量份、四苯基硼酸四苯基磷(東京化成製造)0.5質量份。進而，以相對於固體成分的總質量達到25質量%的方式添加氮化硼填料(水島合金鐵(Mizushima Ferroalloy)製造)，並以相對於固體成分的總質量達到3質量%的方式添加Aerosil Filler R972(日本Aerosil製造)，然後充分地混練而獲得清漆。將所調配的清漆塗佈於已完成剝離處理的聚對苯二甲酸乙二酯膜上，於80℃下加熱30分鐘，繼而於120℃下加熱30分鐘。其後，於室溫(25℃)下剝離聚對苯二甲酸乙二酯膜，獲得厚度為25μm的黏著膜作為黏晶膜。To the NMP solution (containing 100 parts by mass of the polyimine resin) of the polyimine resin obtained above, 4 parts by mass of a cresol novolak type epoxy resin (manufactured by Tohto Kasei Co., Ltd.), 4, 4'-[ 1-[4-[1-(4-hydroxyphenyl)-1-methylethyl]phenyl]ethylidene]bisphenol (manufactured by Honshu Chemical Co., Ltd.) 2 parts by mass of tetraphenylphosphonium tetraphenylborate ( Tokyo Chemical Manufacturing Co., Ltd.) 0.5 parts by mass. Furthermore, a boron nitride filler (manufactured by Mizushima Ferroalloy) was added so as to be 25% by mass based on the total mass of the solid content, and Aerosil Filler was added so as to be 3% by mass based on the total mass of the solid component. R972 (manufactured by Aerosil, Japan), and then fully kneaded to obtain a varnish. The formulated varnish was applied to a polyethylene terephthalate film which had been subjected to a release treatment, and heated at 80 ° C for 30 minutes, followed by heating at 120 ° C for 30 minutes. Thereafter, the polyethylene terephthalate film was peeled off at room temperature (25 ° C) to obtain an adhesive film having a thickness of 25 μm as an adhesive film.

2.切割膠帶的製作2. Production of cutting tape (1)強黏著層(1) Strong adhesive layer

藉由溶液聚合法而獲得使用丙烯酸丁酯與丙烯酸乙酯、丙烯腈作為主單體，並使用丙烯酸羥基乙酯作為官能基單體的丙烯酸共聚物作為黏著劑。該經合成的丙烯酸共聚物的重量平均分子量為70萬，玻璃轉移點為-30℃。製備對該丙烯酸共聚物100質量份調配了多官能異氰酸酯交聯劑(NIPPON POLYURETHANE INDUSTRY股份有限公司製造)2.2質量份而成的黏著劑溶液。於塗佈有聚矽氧系脫模劑的雙軸延伸聚酯膜分隔片(厚度為25μm)上，以使乾燥時的黏著劑厚度達到20μm的方式塗佈黏著劑溶液。繼而，將黏著劑溶液於80℃下乾燥30分鐘後，將塗佈有聚矽氧系脫模劑的其他雙軸延伸聚酯膜分隔片(厚度為25μm)層壓於黏著劑面上。An acrylic copolymer using butyl acrylate and ethyl acrylate, acrylonitrile as a main monomer, and hydroxyethyl acrylate as a functional group monomer was obtained as a binder by a solution polymerization method. The synthesized acrylic copolymer had a weight average molecular weight of 700,000 and a glass transition point of -30 °C. An adhesive solution prepared by disposing 2.2 parts by mass of a polyfunctional isocyanate crosslinking agent (manufactured by NIPPON POLYURETHANE INDUSTRY CO., LTD.) in an amount of 100 parts by mass of the acrylic copolymer was prepared. The adhesive solution was applied to a biaxially stretched polyester film separator (having a thickness of 25 μm) coated with a polysiloxane-based release agent so that the thickness of the adhesive at the time of drying became 20 μm. Then, after the adhesive solution was dried at 80 ° C for 30 minutes, another biaxially stretched polyester film separator sheet (having a thickness of 25 μm) coated with a polyoxynoxy-based release agent was laminated on the adhesive face.

(2)弱黏著層與基材的積層體(2) Laminated layer of weak adhesion layer and substrate

藉由溶液聚合法而獲得使用丙烯酸2-乙基己酯與甲基丙烯酸甲酯作為主單體，並使用甲基丙烯酸羥基乙酯與丙烯酸作為官能基單體的丙烯酸共聚物作為黏著劑。該經合成的丙烯酸共聚物的重量平均分子量為40萬，玻璃轉移點為-38℃。製備對該丙烯酸共聚物100質量份調配了多官能異氰酸酯交聯劑(三菱化學股份有限公司製造)15質量份而成的黏著劑溶液。於塗佈有聚矽氧系脫模劑的雙軸延伸聚酯膜分隔片(厚度為38μm)上，以使乾燥時的黏著劑厚度達到10μm的方式塗佈黏著劑溶液。繼而，將黏著劑溶液於80℃下乾燥30分鐘後，進而將聚烯烴膜(厚度 為100μm)層壓於黏著劑面上。將該多層膜於室溫下放置1週並充分地進行老化後，用於試驗。An acrylic copolymer using 2-ethylhexyl acrylate and methyl methacrylate as a main monomer and using hydroxyethyl methacrylate and acrylic acid as a functional group monomer was obtained as an adhesive by a solution polymerization method. The synthesized acrylic copolymer had a weight average molecular weight of 400,000 and a glass transition point of -38 °C. An adhesive solution prepared by dissolving 15 parts by mass of a polyfunctional isocyanate crosslinking agent (manufactured by Mitsubishi Chemical Corporation) in an amount of 100 parts by mass of the acrylic copolymer was prepared. The adhesive solution was applied to a biaxially stretched polyester film separator (thickness: 38 μm) coated with a polyoxymethylene-based release agent so that the thickness of the adhesive during drying was 10 μm. Then, after the adhesive solution was dried at 80 ° C for 30 minutes, the polyolefin film (thickness) was further Laminated to the adhesive side of 100 μm). The multilayer film was allowed to stand at room temperature for one week and sufficiently aged.

(3)強黏著層與基材的積層體(3) Laminated body of strong adhesive layer and substrate

藉由溶液聚合法而獲得使用丙烯酸丁酯與丙烯酸乙酯、丙烯腈作為主單體，並使用丙烯酸羥基乙酯作為官能基單體的丙烯酸共聚物作為黏著劑。該經合成的丙烯酸共聚物的重量平均分子量為70萬，玻璃轉移點為-30℃。製備對該丙烯酸共聚物100質量份調配了多官能異氰酸酯交聯劑(NIPPON POLYURETHANE INDUSTRY股份有限公司製造)2.2質量份而成的黏著劑溶液。於塗佈有聚矽氧系脫模劑的雙軸延伸聚酯膜分隔片(厚度為25μm)上，以使乾燥時的黏著劑厚度達到20μm的方式塗佈黏著劑溶液。繼而，將黏著劑溶液於80℃下乾燥30分鐘後，進而將聚烯烴膜(厚度為100μm)層壓於黏著劑面上。將該多層膜於室溫下放置1週並充分地進行老化後，用於試驗。An acrylic copolymer using butyl acrylate and ethyl acrylate, acrylonitrile as a main monomer, and hydroxyethyl acrylate as a functional group monomer was obtained as a binder by a solution polymerization method. The synthesized acrylic copolymer had a weight average molecular weight of 700,000 and a glass transition point of -30 °C. An adhesive solution prepared by disposing 2.2 parts by mass of a polyfunctional isocyanate crosslinking agent (manufactured by NIPPON POLYURETHANE INDUSTRY CO., LTD.) in an amount of 100 parts by mass of the acrylic copolymer was prepared. The adhesive solution was applied to a biaxially stretched polyester film separator (having a thickness of 25 μm) coated with a polysiloxane-based release agent so that the thickness of the adhesive at the time of drying became 20 μm. Then, after the adhesive solution was dried at 80 ° C for 30 minutes, a polyolefin film (thickness: 100 μm) was further laminated on the adhesive face. The multilayer film was allowed to stand at room temperature for one week and sufficiently aged.

3.半導體晶圓的積層體的製作3. Fabrication of laminates for semiconductor wafers (實例1)(Example 1)

將切成內徑為210mm的圓環狀的上述(1)的強黏著層作為環形框固定用的黏著層貼附在弱黏著層與基材的積層體(切割膠帶)的弱黏著層上。其後，以與強黏著層形成同心的方式貼附圓形加工成直徑220mm的黏晶膜，從而製成半導體裝置製造用黏著片。於60℃的熱板上，使直徑為8吋、厚度為50μm的半導體晶圓與半導體裝置製造用黏著片的黏晶膜貼合，從而獲得半導體晶圓的積層體。The above-mentioned (1) strong adhesive layer cut into an annular shape having an inner diameter of 210 mm was attached as an adhesive layer for fixing the ring frame to the weakly-adhesive layer of the laminated body (cut tape) of the weak adhesive layer and the substrate. Thereafter, a die-shaped film having a diameter of 220 mm was attached in a manner concentric with the strong adhesive layer to form an adhesive sheet for semiconductor device manufacturing. A semiconductor wafer having a diameter of 8 Å and a thickness of 50 μm was bonded to a die-bonding film of an adhesive sheet for semiconductor device fabrication on a hot plate at 60 ° C to obtain a laminate of a semiconductor wafer.

(比較例1)(Comparative Example 1)

除未積層強黏著層以外，以與實例1相同的方式獲得半導體晶圓的積層體。A laminate of a semiconductor wafer was obtained in the same manner as in Example 1 except that the strong adhesion layer was not laminated.

(比較例2)(Comparative Example 2)

使用強黏著層與基材的積層體(切割膠帶)來代替弱黏著層與基材的積層體，進而，未積層強黏著層，除此以外，以與實例1相同的方式獲得半導體晶圓的積層體。A semiconductor wafer was obtained in the same manner as in Example 1 except that a laminate of a strong adhesive layer and a substrate (cut tape) was used instead of the laminate of the weak adhesive layer and the substrate, and further, a strong adhesive layer was not laminated. Laminated body.

(比較例3)(Comparative Example 3)

將黏晶膜圓形加工成直徑205mm，且未設置黏晶膜與強黏著層的重疊部分，除此以外，以與實例1相同的方式獲得半導體晶圓的積層體。A laminate of a semiconductor wafer was obtained in the same manner as in Example 1 except that the die-form film was circularly processed to have a diameter of 205 mm and no overlapping portion of the die bond film and the strong adhesion layer was provided.

(比較例4)(Comparative Example 4)

使用強黏著層與基材的積層體(切割膠帶)來代替弱黏著層與基材的積層體，進而，將黏晶膜圓形加工成直徑205mm，且未設置黏晶膜與強黏著層的重疊部分，除此以外，以與實例1相同的方式獲得半導體晶圓的積層體。The laminate of the strong adhesive layer and the substrate (cutting tape) is used instead of the laminate of the weak adhesive layer and the substrate, and then the adhesive film is round-shaped into a diameter of 205 mm, and the adhesive film and the strong adhesive layer are not provided. A laminate of a semiconductor wafer was obtained in the same manner as in Example 1 except for the overlap portion.

於上述實例1及比較例1~比較例4中所製作的樣品中，半導體晶圓的貼合是使用JCM股份有限公司製造的「DM-300-H」於60℃下進行。In the samples prepared in the above Example 1 and Comparative Example 1 to Comparative Example 4, the bonding of the semiconductor wafer was carried out at 60 ° C using "DM-300-H" manufactured by JCM Co., Ltd.

4.各種評價4. Various evaluations (切割步驟)(cutting step)

使用DISCO股份有限公司製造的全自動切割機「DFD-6361」，切斷上述實例1及比較例1~比較例4中所製作的樣品。於樣品的切斷時，使用具有直徑為250mm 的開口的圓環狀的環形框。於樣品的切斷時，採用藉由1片刀片來完成加工的單切方式，並使用DISCO股份有限公司製造的切割刀片「NBC-ZH 104F-SE 27HDBB」作為刀片。樣品的切斷是於刀片轉速為45,000rpm，切斷速度為50mm/s的條件下進行。切斷時的刀片高度是設定為切入切割基材20μm的刀片高度(80μm)。切斷半導體晶圓的尺寸是設定為10mm×10mm。The samples prepared in the above Example 1 and Comparative Examples 1 to 4 were cut using a fully automatic cutting machine "DFD-6361" manufactured by DISCO Corporation. For the cutting of the sample, use a diameter of 250mm The opening of the ring-shaped ring frame. At the time of cutting the sample, a single-cut method of processing by one blade was used, and a cutting blade "NBC-ZH 104F-SE 27HDBB" manufactured by DISCO Co., Ltd. was used as the blade. The cutting of the sample was carried out under the conditions of a blade rotation speed of 45,000 rpm and a cutting speed of 50 mm/s. The blade height at the time of cutting was set to a blade height (80 μm) which was cut into the cutting substrate by 20 μm. The size of the cut semiconductor wafer was set to 10 mm × 10 mm.

將於切割步驟中環形框與黏著層間剝離的情況、或者於切割步驟中產生了黏晶膜的剝離或半導體晶片飛散的情況分別判定為不良(B)，將未產生上述不良情況者判定為良好(A)。In the case where the ring frame and the adhesive layer are peeled off in the cutting step, or the peeling of the die film or the scattering of the semiconductor wafer in the cutting step, it is determined as defective (B), and the case where the above-described problem is not caused is judged to be good. (A).

(拾取步驟)(pickup step)

使用Renesas Eastern Japan Semiconductor公司製造的可撓性黏晶機(flexible die bonder)「DB-730」對藉由上述方法而單片化的晶片的拾取性進行評價。拾取用夾頭使用Micro Mechanics公司製造的「RUBBER TIP 13-087E-33(尺寸：10mm×10mm)」，頂針使用Micro Mechanics公司製造的「EJECTOR NEEDLE SEN2-83-05(直徑：0.7mm，前端形狀：直徑為350μm的半圓)」。頂針是以4.2mm的針中心間隔而配置有9根。於拾取時的針的上頂速度為10mm/s、上頂高度為1000μm的條件下評價拾取性。連續拾取100個晶片，將不產生晶片破損、拾取失誤等的情況判定為良好(A)，將即便1個晶片產生了晶片破損或拾取失誤等的情況判定為不良(B)。The pick-up property of the wafer singulated by the above method was evaluated using a flexible die bonder "DB-730" manufactured by Renesas Eastern Japan Semiconductor Co., Ltd. The pickup chuck uses "RUBBER TIP 13-087E-33 (size: 10 mm × 10 mm)" manufactured by Micro Mechanics, Inc., and the thimble is "EJECTOR NEEDLE SEN2-83-05 (diameter: 0.7 mm, front end shape) manufactured by Micro Mechanics. : Semicircle with a diameter of 350 μm). The thimble is arranged with 9 needles at a center interval of 4.2 mm. The pick-up property was evaluated under the condition that the top speed of the needle at the time of picking was 10 mm/s and the height of the top top was 1000 μm. When 100 wafers are continuously picked up, it is judged that the wafer is not damaged or picked up, and the like is judged to be good (A), and even if one wafer is damaged or picked up, it is judged to be defective (B).

將上述實例1及比較例1~比較例4中所製作的樣品、以及切割步驟及拾取步驟中的各種評價的結果示於表1。The samples prepared in the above Example 1 and Comparative Examples 1 to 4 and the results of various evaluations in the dicing step and the picking step are shown in Table 1.

比較例1~比較例4不存在黏晶膜與環形框固定用強黏著層的接觸部分或重疊部分。In Comparative Example 1 to Comparative Example 4, there was no contact portion or overlapping portion of the adhesive film and the strong adhesive layer for fixing the ring frame.

比較例1因黏著層的環形框配置部分與環形框的密接力弱，於切割步驟中黏著層自環形框剝離，且於切割步驟中產生黏晶膜剝離，故不佳。比較例2因切割膠帶與黏晶膜的密接力高，於拾取步驟中產生晶片破損或拾取失誤，故不佳。比較例3由於不存在強黏著層與黏晶膜的接觸部分或重疊部分，因此於切割步驟中產生黏晶膜剝離，故不佳。比較例4因切割膠帶與黏晶膜的密接力高，於拾取步驟中產生晶片破損或拾取失誤，故不佳。In Comparative Example 1, since the adhesion between the annular frame portion of the adhesive layer and the ring frame was weak, the adhesive layer was peeled off from the ring frame in the cutting step, and the release film was peeled off in the cutting step, which was not preferable. In Comparative Example 2, since the adhesion between the dicing tape and the viscous film was high, wafer damage or pickup failure occurred in the pickup step, which was not preferable. In Comparative Example 3, since the contact portion or the overlapping portion of the strong adhesive layer and the adhesive film was not present, the peeling of the adhesive film occurred in the cutting step, which was not preferable. In Comparative Example 4, since the adhesion between the dicing tape and the viscous film was high, wafer damage or pickup failure occurred in the pickup step, which was not preferable.

根據以上結果，確認於製造半導體裝置時，藉由使用本發明的半導體裝置製造用黏著片，可維持拾取步驟中的黏晶膜及切割片間的剝離容易性，並可抑制切割步驟中的環形框的剝離及晶片的飛散。於本發明中，可容易地拾取 帶有黏晶膜的半導體晶片，藉此可提昇半導體裝置的良率。According to the above results, it has been confirmed that the use of the adhesive sheet for semiconductor device manufacturing of the present invention in the production of a semiconductor device can maintain the ease of peeling between the die bond film and the dicing sheet in the picking step, and can suppress the ring shape in the cutting step. Stripping of the frame and scattering of the wafer. In the present invention, it can be easily picked up A semiconductor wafer with a die-bonding film, whereby the yield of the semiconductor device can be improved.

而且，上述半導體裝置製造用黏著片1除了維持拾取步驟中的黏晶膜及切割片間的剝離容易性、及抑制切割步驟中的環形框的剝離及晶片的飛散的效果以外，亦有助於解決捲成輥狀時的黏晶膜的捲痕的問題。以下，對該點進行說明。Further, the above-mentioned adhesive sheet 1 for producing a semiconductor device contributes to the ease of peeling between the die-bonding film and the dicing sheet in the pick-up step, and the effect of suppressing peeling of the ring frame and scattering of the wafer in the dicing step. The problem of the curl of the die film when wound into a roll is solved. Hereinafter, this point will be described.

先前，實施了預切割加工的黏著片200例如圖7所示般，於基材膜201上積層有圓形的黏晶膜202，進而，以覆蓋黏晶膜202的方式積層有圓形的黏著層203。Conventionally, as shown in FIG. 7, the adhesive sheet 200 subjected to the pre-cut processing has a circular adhesive film 202 laminated on the base film 201, and further has a circular adhesive layer so as to cover the adhesive film 202. Layer 203.

當將此種黏著片200例如圖8所示般捲繞於圓筒狀的捲芯211上而形成輥狀時，黏晶膜202與黏著層203的重疊部分的厚度比黏著片200的其他部分的厚度更厚，因此存在捲繞時的張力過度地施加於黏晶膜202上的情況。因此，如圖9所示，存在捲痕212轉印至黏晶膜202的中央部分，導致黏晶膜202的平滑性受損的情況。黏晶膜202的厚度越增加，越容易產生捲痕212，若產生捲痕212，則存在將黏著片200貼附於半導體晶圓時空氣進入至半導體晶圓與黏晶膜202之間，導致半導體裝置的製造過程中產生不良情況的可能性。When such an adhesive sheet 200 is wound around a cylindrical core 211 as shown in FIG. 8, and formed into a roll shape, the thickness of the overlapping portion of the adhesive film 202 and the adhesive layer 203 is greater than the other portions of the adhesive sheet 200. Since the thickness is thicker, there is a case where the tension at the time of winding is excessively applied to the die film 202. Therefore, as shown in FIG. 9, there is a case where the curl 212 is transferred to the central portion of the die film 202, resulting in impaired smoothness of the die film 202. As the thickness of the adhesive film 202 increases, the curl 212 is more likely to be generated. If the curl 212 is generated, air is introduced between the semiconductor wafer and the die film 202 when the adhesive sheet 200 is attached to the semiconductor wafer. The possibility of a defect in the manufacturing process of a semiconductor device.

再者，作為先前的黏著片，如圖10所示，亦包括於經預切割加工的黏晶膜302及黏著膜303的外側亦形成有黏著膜303的黏著片300，但與黏著片200同様地，可能產生捲繞成輥狀時的捲痕的問題。Further, as the prior adhesive sheet, as shown in FIG. 10, the adhesive sheet 300 of the adhesive film 303 is also formed on the outer side of the pre-cut processed adhesive film 302 and the adhesive film 303, but is the same as the adhesive sheet 200. However, there is a possibility that a curl in the form of a roll is generated.

相對於此，於上述黏著片1中，如圖2所示，黏晶膜 40的外周部分40a的至少一部分與黏著層30重疊，對應於外周部分40a的黏著片1的厚度比對應於中央部分40b的黏著片1的厚度更厚。藉此，當將黏著片1捲成輥狀時，受到黏晶膜40與黏著層30的重疊部分保護，施加於黏晶膜的中央部分40b的捲繞時的張力得到緩和，可抑制捲痕轉印至黏晶膜40上。On the other hand, in the above adhesive sheet 1, as shown in FIG. 2, the adhesive film At least a portion of the outer peripheral portion 40a of 40 overlaps with the adhesive layer 30, and the thickness of the adhesive sheet 1 corresponding to the outer peripheral portion 40a is thicker than the thickness of the adhesive sheet 1 corresponding to the central portion 40b. Thereby, when the adhesive sheet 1 is wound into a roll shape, it is protected by the overlapping portion of the adhesive film 40 and the adhesive layer 30, and the tension applied to the central portion 40b of the adhesive film is relaxed, and the curl can be suppressed. Transfer onto the die film 40.

另外，若就抑制捲痕的轉印的觀點而言，則亦可如圖11所示的黏著片2般，黏著層30的內周的至少一部分與黏晶膜40重疊。於此情況下，對應於外周部分40a的黏著片2的厚度亦比對應於中央部分40b的黏著片2的厚度更厚。因此，與黏著片1同様地，可抑制捲痕轉印至黏晶膜40上。Further, from the viewpoint of suppressing the transfer of the curl marks, at least a part of the inner circumference of the adhesive layer 30 may be overlapped with the die film 40 as in the adhesive sheet 2 shown in FIG. In this case, the thickness of the adhesive sheet 2 corresponding to the outer peripheral portion 40a is also thicker than the thickness of the adhesive sheet 2 corresponding to the central portion 40b. Therefore, in the same manner as the adhesive sheet 1, the transfer of the curl to the die film 40 can be suppressed.

以下，對本發明的黏著片的捲痕轉印抑制性的評價試驗加以描述。Hereinafter, the evaluation test of the curl transfer inhibition property of the adhesive sheet of the present invention will be described.

(實例1)(Example 1)

將以70mm的間隔連續地切成內徑為210mm的圓環狀的上述(1)的強黏著層作為環形框固定用的黏著層貼附在弱黏著層與基材的積層體(切割膠帶)的弱黏著層上。其後，以與強黏著層形成同心的方式連續地貼附圓形加工成直徑220mm的黏晶膜。然後，針對切割膠帶與強黏著層的積層部分，一面以使對於基材的切入深度變成10μm以下的方式進行調節，一面與黏晶膜成同心圓狀地進行φ 290mm的圓形預切割加工，並且以使切割膠帶與強黏著層的積層部分殘留於基材的寬度方向的兩端部的方式進 行加工，從而獲得半導體裝置製造用黏著片。The above-mentioned (1) strong adhesive layer which is continuously cut into an annular shape having an inner diameter of 210 mm at an interval of 70 mm is attached as an adhesive layer for fixing a ring frame to a laminate of a weak adhesive layer and a substrate (cut tape) The weak adhesion layer. Thereafter, a circularly processed film of 220 mm in diameter was continuously attached in a manner concentric with the strong adhesive layer. Then, the laminated portion of the dicing tape and the strong adhesive layer is adjusted so as to have a depth of cut into the substrate of 10 μm or less, and a circular pre-cutting process of φ 290 mm is performed concentrically with the die-bonding film. Further, the laminated tape and the laminated portion of the strong adhesive layer are left in the both ends of the width direction of the substrate. The processing is performed to obtain an adhesive sheet for semiconductor device manufacturing.

(實例2)(Example 2)

除將黏晶膜的直徑圓形加工成211mm以外，以與實例1相同的方式獲得半導體裝置製造用黏著片。An adhesive sheet for semiconductor device manufacturing was obtained in the same manner as in Example 1 except that the diameter of the adhesive film was circularly processed to 211 mm.

(比較例1)(Comparative Example 1)

除將黏晶膜的直徑圓形加工成205mm以外，以與實例1相同的方式獲得半導體裝置製造用黏著片。An adhesive sheet for semiconductor device manufacturing was obtained in the same manner as in Example 1 except that the diameter of the adhesive film was circularly processed to 205 mm.

(比較例2)(Comparative Example 2)

在弱黏著層與基材的積層體(切割膠帶)的弱黏著層上，以60mm的間隔連續地貼附圓形加工成直徑220mm的黏晶膜。然後，針對切割膠帶與弱黏著層的積層部分，一面以使對於基材的切入深度變成10μm以下的方式進行調節，一面與黏晶膜成同心圓狀地進行φ 290mm的圓形預切割加工，並且以使切割膠帶殘留於基材的寬度方向的兩端部的方式進行加工，從而獲得半導體裝置製造用黏著片。On the weak adhesion layer of the laminate of the weak adhesion layer and the substrate (cut tape), a circularly processed film of 220 mm in diameter was continuously attached at intervals of 60 mm. Then, the laminated portion of the dicing tape and the weak adhesive layer is adjusted so as to have a depth of cut into the substrate of 10 μm or less, and a circular pre-cutting process of φ 290 mm is performed concentrically with the die-bonding film. Further, the dicing tape is processed so as to remain at both end portions in the width direction of the substrate, thereby obtaining an adhesive sheet for semiconductor device production.

(比較例3)(Comparative Example 3)

除將黏晶膜的厚度設定為60μm以外，以與比較例2相同的方式獲得半導體裝置製造用黏著片。An adhesive sheet for semiconductor device production was obtained in the same manner as in Comparative Example 2 except that the thickness of the adhesive film was changed to 60 μm.

(片材輥的製作)(Production of sheet roll)

將實例及比較例的黏著片以100片份圓形的黏晶膜的長度捲繞成輥狀，從而獲得片材輥。將捲繞張力設定為1kg或3kg。繼而，將所獲得的片材輥於冷藏庫內(5℃)保存2週，其後，對自冷藏庫所取出的片材輥的第50片的黏 晶膜觀察捲痕的有無。評價基準如下。The adhesive sheets of the examples and the comparative examples were wound into a roll shape in the length of a 100-piece circular die-shaped film to obtain a sheet roll. The winding tension is set to 1 kg or 3 kg. Then, the obtained sheet roll was stored in a refrigerator (5 ° C) for 2 weeks, and thereafter, the 50 sheet of the sheet roll taken out from the refrigerator was stuck. The crystal film was observed for the presence or absence of the curl. The evaluation criteria are as follows.

○：即便自所有角度進行觀察，亦未確認到捲痕○: Even if it is observed from all angles, no curl marks are confirmed.

△：即便自膜上面進行觀察，亦未確認到捲痕，但若改變膜的角度進行觀察，則確認到捲痕△: No curl was observed even when observed from the top of the film, but if the angle of the film was changed and observed, the curl was confirmed.

×：若自膜上面進行觀察，則確認到捲痕×: If the film is observed from above, the curl is confirmed.

將評價結果示於表2。於黏晶膜的外周與黏著層重疊的實例1、實例2中，不論捲繞張力均未確認到捲痕。另一方面，於黏晶膜的外周與黏著層不重疊的比較例1~比較例3中，確認到捲痕，且確認於捲繞張力大的情況下更顯著地產生捲痕。另外，以目視評價將實例及比較例的黏著片貼附於半導體晶圓時有無產生空隙。其結果，確認空隙的產生情況對應於捲痕的產生情況而增加。The evaluation results are shown in Table 2. In Example 1 and Example 2 in which the outer periphery of the adhesive film was overlapped with the adhesive layer, no curl was observed regardless of the winding tension. On the other hand, in Comparative Examples 1 to 3 in which the outer periphery of the adhesive film did not overlap with the adhesive layer, the curl was confirmed, and it was confirmed that the winding was more marked when the winding tension was large. Further, whether or not voids were generated when the adhesive sheets of the examples and the comparative examples were attached to the semiconductor wafer were visually evaluated. As a result, it was confirmed that the occurrence of voids increased in accordance with the occurrence of the curl.

雖然本發明已以較佳實施例揭露如上，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application.

1、2‧‧‧半導體裝置製造用黏著片1, 2‧‧‧Adhesive sheets for semiconductor device manufacturing

10‧‧‧基材膜10‧‧‧Base film

20‧‧‧黏著層(第1黏著層)20‧‧‧Adhesive layer (1st adhesive layer)

25‧‧‧自開口露出的部分25‧‧‧The part exposed from the opening

30‧‧‧黏著層(第2黏著層)30‧‧‧Adhesive layer (2nd adhesive layer)

30a‧‧‧開口30a‧‧‧ openings

32‧‧‧黏著層32‧‧‧Adhesive layer

40、45‧‧‧黏晶膜40, 45‧‧‧ Mud film

40a‧‧‧外周部分40a‧‧‧External part

40b‧‧‧中央部分40b‧‧‧Central Part

50‧‧‧環形框50‧‧‧ ring box

50a‧‧‧開口50a‧‧‧ openings

60‧‧‧半導體晶圓60‧‧‧Semiconductor wafer

65‧‧‧半導體晶片65‧‧‧Semiconductor wafer

70‧‧‧旋轉刀70‧‧‧Rotary knife

80‧‧‧半導體晶片80‧‧‧Semiconductor wafer

85‧‧‧支撐基材85‧‧‧Support substrate

90‧‧‧線90‧‧‧ line

95‧‧‧密封樹脂層95‧‧‧ sealing resin layer

100‧‧‧半導體裝置100‧‧‧Semiconductor device

200‧‧‧黏著片200‧‧‧Adhesive tablets

201‧‧‧基材膜201‧‧‧Base film

202‧‧‧黏晶膜202‧‧‧Met film

203‧‧‧黏著層203‧‧‧Adhesive layer

211‧‧‧捲芯211‧‧‧Volume core

212‧‧‧捲痕212‧‧‧The mark

300‧‧‧黏著片300‧‧‧Adhesive tablets

302‧‧‧黏晶膜302‧‧‧Met film

303‧‧‧黏著膜303‧‧‧Adhesive film

X-X、Y-Y、Z-Z‧‧‧線X-X, Y-Y, Z-Z‧‧‧ lines

圖1是表示黏著片的一實施形態的平面圖。Fig. 1 is a plan view showing an embodiment of an adhesive sheet.

圖2是沿著圖1的II-II線的示意剖面圖。Fig. 2 is a schematic cross-sectional view taken along line II-II of Fig. 1.

圖3是表示黏著片上貼附有半導體晶圓及環形框的積層物的示意剖面圖。3 is a schematic cross-sectional view showing a laminate in which a semiconductor wafer and a ring frame are attached to an adhesive sheet.

圖4是表示利用切割刀片切割半導體晶圓的步驟的示意剖面圖。4 is a schematic cross-sectional view showing a step of cutting a semiconductor wafer using a dicing blade.

圖5是表示拾取經單片化的帶有黏晶膜的半導體晶片的步驟的示意剖面圖。Figure 5 is a schematic cross-sectional view showing the step of picking up a singulated semiconductor wafer with a die-bonding film.

圖6是表示使用經拾取的帶有黏晶膜的半導體晶片的半導體裝置的示意剖面圖。Figure 6 is a schematic cross-sectional view showing a semiconductor device using a picked semiconductor wafer with a die-bonding film.

圖7(a)是表示先前的黏著片的一例的平面圖，圖7(b)是圖7(a)的X-X線剖面圖。Fig. 7 (a) is a plan view showing an example of a conventional adhesive sheet, and Fig. 7 (b) is a cross-sectional view taken along line X-X of Fig. 7 (a).

圖8是表示圖7(a)及圖7(b)所示的黏著片的輥體的立體圖。Fig. 8 is a perspective view showing a roller body of the adhesive sheet shown in Figs. 7(a) and 7(b).

圖9(a)是表示圖7(a)及圖7(b)所示的黏著片上的捲痕的様子的平面圖，圖9(b)是圖9(a)的Y-Y線剖面圖。Fig. 9 (a) is a plan view showing a tweezers of a winding mark on the adhesive sheet shown in Figs. 7 (a) and 7 (b), and Fig. 9 (b) is a cross-sectional view taken along line Y-Y of Fig. 9 (a).

圖10(a)是表示先前的黏著片的其他例的平面圖，圖10(b)是圖10(a)的Z-Z線剖面圖。Fig. 10 (a) is a plan view showing another example of the conventional adhesive sheet, and Fig. 10 (b) is a cross-sectional view taken along line Z-Z of Fig. 10 (a).

圖11是表示黏著片的變形例的示意剖面圖。Fig. 11 is a schematic cross-sectional view showing a modification of the adhesive sheet.

10‧‧‧基材膜10‧‧‧Base film

20‧‧‧黏著層(第1黏著層)20‧‧‧Adhesive layer (1st adhesive layer)

25‧‧‧自開口露出的部分25‧‧‧The part exposed from the opening

30‧‧‧黏著層(第2黏著層)30‧‧‧Adhesive layer (2nd adhesive layer)

30a‧‧‧開口30a‧‧‧ openings

40‧‧‧黏晶膜40‧‧‧Met film

50‧‧‧環形框50‧‧‧ ring box

50a‧‧‧開口50a‧‧‧ openings

60‧‧‧半導體晶圓60‧‧‧Semiconductor wafer

Claims (5)

一種黏著片，其包括：基材；第1黏著層，配置於上述基材上；第2黏著層，配置於上述第1黏著層上，並且具有露出上述第1黏著層的開口；以及黏晶膜，配置於上述第1黏著層的自上述開口露出的部分，其中上述黏晶膜的外周的至少一部分與上述第2黏著層接觸。 An adhesive sheet comprising: a substrate; a first adhesive layer disposed on the substrate; a second adhesive layer disposed on the first adhesive layer and having an opening exposing the first adhesive layer; and a die bond The film is disposed on a portion of the first adhesive layer exposed from the opening, and at least a portion of an outer circumference of the die bond film is in contact with the second adhesive layer. 如申請專利範圍第1項所述之黏著片，其中上述黏晶膜的外周的至少一部分與上述第2黏著層重疊。 The adhesive sheet according to claim 1, wherein at least a part of an outer circumference of the adhesive film overlaps with the second adhesive layer. 如申請專利範圍第1項所述之黏著片，其中上述第2黏著層的內周的至少一部分與上述黏晶膜重疊。 The adhesive sheet according to claim 1, wherein at least a part of an inner circumference of the second adhesive layer overlaps the adhesive film. 如申請專利範圍第2項所述之黏著片，其中上述黏晶膜與上述第2黏著層的重疊部分的寬度為0.1mm~25mm。 The adhesive sheet according to claim 2, wherein a width of the overlapping portion of the adhesive film and the second adhesive layer is 0.1 mm to 25 mm. 如申請專利範圍第1項至第4項中任一項所述之黏著片，其用於切割加工及黏晶加工。 The adhesive sheet according to any one of claims 1 to 4, which is used for cutting processing and die bonding.
TW100121041A 2010-06-18 2011-06-16 Adhesive sheet TWI458804B (en)

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