KR20120134155A - Adhesive sheet - Google Patents

Adhesive sheet Download PDF

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Publication number
KR20120134155A
KR20120134155A KR1020127030011A KR20127030011A KR20120134155A KR 20120134155 A KR20120134155 A KR 20120134155A KR 1020127030011 A KR1020127030011 A KR 1020127030011A KR 20127030011 A KR20127030011 A KR 20127030011A KR 20120134155 A KR20120134155 A KR 20120134155A
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KR
South Korea
Prior art keywords
adhesive
adhesive layer
die bonding
bonding film
film
Prior art date
Application number
KR1020127030011A
Other languages
Korean (ko)
Other versions
KR101422603B1 (en
Inventor
유우키 나카무라
마사노부 미야하라
요지 가타야마
쓰요시 다마키
게이이치 하타케야마
다쿠지 이케야
Original Assignee
히다치 가세고교 가부시끼가이샤
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Publication of KR20120134155A publication Critical patent/KR20120134155A/en
Application granted granted Critical
Publication of KR101422603B1 publication Critical patent/KR101422603B1/en

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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract

반도체 장치 제조용 접착 시트(1)는, 기재 필름(10), 기재 필름(10) 상에 배치된 접착층(20), 접착층(20) 상에 배치되고, 또한 접착층(20)이 노출되는 개구(30a)를 가지는 접착층(30), 및 접착층(20)에서의 개구(30a)로부터 노출되는 부분(25)에 배치된 다이 본딩 필름(40)을 구비하고, 다이 본딩 필름(40)의 외주 중 적어도 일부가, 접착층(30)에 접하고 있다.The adhesive sheet 1 for semiconductor device manufacture is the opening 30a which is arrange | positioned on the base film 10, the contact bonding layer 20 arrange | positioned on the base film 10, the contact bonding layer 20, and the contact bonding layer 20 is exposed. And a die bonding film 40 disposed in the portion 25 exposed from the opening 30a in the adhesive layer 20, and at least a part of the outer circumference of the die bonding film 40. Is in contact with the adhesive layer 30.

Figure P1020127030011
Figure P1020127030011

Description

접착 시트{ADHESIVE SHEET}Adhesive Sheet {ADHESIVE SHEET}

본 발명은, 접착 시트에 관한 것이다.The present invention relates to an adhesive sheet.

반도체 장치의 제조 공정의 하나로서, 필요한 전처리(pre-treatment)를 거쳐 회로가 형성된 반도체 웨이퍼를 복수의 칩으로 절단 및 분리하는 다이싱(dicing) 공정이 있다. 이 공정에서는, 링 프레임으로 일컬어지는 원환형(圓環形)이나 직사각형 환형의 프레임에 웨이퍼 고정용 다이싱 시트를 부착하고, 이 다이싱 시트에 반도체 웨이퍼를 부착한 후, 반도체 웨이퍼를 회로마다 다이싱하여 반도체칩을 얻는다. 이어서, 본딩 머신에 의한 확장(expanding) 공정, 칩 마운팅 공정, 나아가서는 와이어 본딩 공정, 몰딩 공정을 행하여 반도체 장치가 제조된다.As one of the manufacturing processes of a semiconductor device, there is a dicing step of cutting and separating a semiconductor wafer on which a circuit is formed into a plurality of chips through necessary pre-treatment. In this process, a wafer-fixing dicing sheet is attached to a ring-shaped or rectangular-ring-shaped frame called a ring frame, a semiconductor wafer is attached to the dicing sheet, Thereby obtaining a semiconductor chip. Subsequently, a semiconductor device is manufactured by performing an expansion process by a bonding machine, a chip mounting process, a wire bonding process, and a molding process.

최근에는, 반도체 장치의 제조 시에, 다이싱 시트 및 다이 어태치(die attach) 필름을 일체화한 다이 어태치 필름 일체형 시트를 사용하는 방법이 제안되어 있다. 다이 어태치 필름 일체형 시트는, 다이싱 시트로서의 기능과, 칩을 리드 프레임이나 배선 기판 등에 고정하는 접착제로서의 기능을 겸비한 다층 다이싱 시트로서, 종래 방법에 비해 가공 공정을 단축할 수 있는 점 등의 이점이 있다.In recent years, the method of using the die-attach film integrated sheet which integrated the dicing sheet and the die attach film at the time of manufacture of a semiconductor device is proposed. The die attach film-integrated sheet is a multilayer dicing sheet having both a function as a dicing sheet and an adhesive for fixing a chip to a lead frame or a wiring board, and the like, which can shorten the processing process as compared to the conventional method. There is an advantage.

그런데, 최근 반도체 소자의 고집적화·칩의 대형화, 박형화에 의해, 다이싱 후의 칩의 픽업(pick-up) 작업이 곤란하게 되는 경우가 증가하고 있다. 이들 용도에 사용되는 다이싱 시트는, 다이싱 후의 반도체칩(예를 들면, Si칩)-다이 본딩 필름 적층품에 대해서는 미접착일 필요가 있다. 그러나, 다이싱 시트를 미접착화시키면, 링 프레임에 대한 접착성도 약해져, 다이싱 공정에 있어서 다이싱 시트로부터 링 프레임이 박리되는 경우가 있다.By the way, in recent years, the case where the pick-up operation | work of the chip | tip after dicing becomes difficult by the high integration of a semiconductor element, enlargement of a chip, and thickness reduction is increasing. The dicing sheet used for these uses needs to be unbonded with respect to the semiconductor chip (for example, Si chip) die-bonding film laminated product after dicing. However, when the dicing sheet is unadhered, the adhesiveness to the ring frame is also weakened, and the ring frame may be peeled from the dicing sheet in the dicing step.

이 때문에, 보다 고도의 다이싱 성능을 가지는 테이프가 필요하게 되어, 다이싱 공정에 있어서는 고접착력으로 웨이퍼(칩)를 유지할 수 있고, 픽업 공정에 있어서는 자외선 조사 등에 의해 접착력을 저감시킬 수 있어서 용이하게 칩을 픽업할 수 있는 다이싱 시트가 개발되고 있다(예를 들면, 하기 특허 문헌 1, 2 참조).For this reason, the tape which has a higher dicing performance is needed, a wafer (chip) can be hold | maintained with a high adhesive force in a dicing process, and an adhesive force can be reduced by ultraviolet irradiation etc. easily in a pick-up process, and it is easy Dicing sheets capable of picking up chips have been developed (see, for example, Patent Documents 1 and 2 below).

일본 특허출원 공개번호 소 60-196956호 공보Japanese Patent Application Publication No. 60-196956 일본 특허출원 공개번호 소 61-28572호 공보Japanese Patent Application Publication No. 61-28572

그러나, 특허 문헌 1의 자외선 경화형 다이싱 시트에서는, 원하는 부분에만 자외선을 조사함으로써 그 부분의 접착력을 저하시키고 있지만, 원하는 부분에만 양호한 정밀도로 자외선을 조사하기 곤란한 경우가 있다. 그러므로, 다이싱 공정에 있어서 웨이퍼나 링 프레임을 확실하게 유지하는 유지력과, 다이싱 후에 칩으로부터 보다 용이하게 박리하는 박리 용이성을 양호한 밸런스로 양립시킨 접착층을 얻기가 곤란한 경우가 있다.However, in the ultraviolet curable dicing sheet of patent document 1, although the adhesive force of the part is reduced by irradiating an ultraviolet-ray only to a desired part, it may be difficult to irradiate an ultraviolet-ray with favorable precision only to a desired part. Therefore, in the dicing process, it may be difficult to obtain an adhesive layer having a good balance of a holding force for reliably holding the wafer or the ring frame and peeling ease of peeling off the chip more easily after dicing.

또한, 특허 문헌 2에서는, 다이 본딩 필름이 접착성이 낮은 접착층 상에만 적층되어 있으므로, 다이싱 공정에 있어서 다이 본딩 필름의 외주 부분이 접착층으로부터 박리되어, 다이 본딩 필름에 부착되어 있던 칩이 비산되는 문제점이 있다.Moreover, in patent document 2, since the die bonding film is laminated only on the adhesive layer with low adhesiveness, in the dicing process, the outer peripheral part of a die bonding film peels from an adhesive layer, and the chip | tip adhered to the die bonding film is scattered. There is a problem.

본 발명은, 전술한 사정을 감안하여 이루어진 것이며, 픽업 공정에 있어서의 다이 본딩 필름과 다이싱 시트 사이의 박리 용이성을 유지하면서, 다이싱 공정에 있어서의 링 프레임의 박리 및 칩의 비산을 억제할 수 있는 접착 시트를 제공하는 것을 목적으로 한다.This invention is made | formed in view of the above-mentioned situation, and can suppress peeling of a ring frame and scattering of a chip in a dicing process, maintaining the peelability between the die bonding film and a dicing sheet in a pick-up process. An object of the present invention is to provide an adhesive sheet.

즉, 본 발명은, 기재(基材), 기재 상에 배치된 제1 접착층, 제1 접착층 상에 배치되고, 또한 제1 접착층이 노출되는 개구를 가지는 제2 접착층, 및 제1 접착층에 있어서의 상기 개구로부터 노출되는 부분에 배치된 다이 본딩 필름을 구비하고, 다이 본딩 필름의 외주 중 적어도 일부가, 제2 접착층에 접하고 있는, 접착 시트를 제공한다.That is, this invention is a base material, the 1st adhesive layer arrange | positioned on a base material, the 2nd adhesive layer which has an opening arrange | positioned on a 1st adhesive layer, and the 1st adhesive layer is exposed, and a 1st adhesive layer in It provides the adhesive sheet provided with the die bonding film arrange | positioned at the part exposed from the said opening, and at least one part of the outer periphery of the die bonding film contact | connects a 2nd contact bonding layer.

본 발명의 접착 시트에서는, 상기 시트가 제1 접착층과는 별도로 제2 접착층을 구비하고 있는 것에 의해, 제1 접착층의 접착력과 제2 접착층의 접착력을 개별적으로 조정할 수 있다. 이에 따라, 픽업 공정에 있어서 다이 본딩 필름과 다이싱 시트 사이의 박리가 용이하게 되도록 제1 접착층의 접착력을 조정하면서, 다이싱 공정에 있어서 링 프레임이 제2 접착층으로부터 박리되지 않도록 제2 접착층의 접착력을 조정할 수 있다. 또한, 본 발명의 접착 시트에서는, 다이 본딩 필름의 외주 중 적어도 일부가 제2 접착층에 접하고 있으므로, 접착력이 조정된 제2 접착층에 다이 본딩 필름의 외주가 접착하게 된다. 이에 따라, 다이싱 공정에 있어서, 다이 본딩 필름의 외주 부분이 박리 기점(起點)이 되어서 다이 본딩 필름이 박리되는 것이 억제되므로, 칩의 비산을 억제할 수 있다.In the adhesive sheet of this invention, since the said sheet is equipped with the 2nd adhesive layer separately from a 1st adhesive layer, the adhesive force of a 1st adhesive layer and the adhesive force of a 2nd adhesive layer can be adjusted individually. Thereby, while adjusting the adhesive force of a 1st contact bonding layer so that peeling between a die bonding film and a dicing sheet may be easy in a pick-up process, the adhesive force of a 2nd contact bonding layer is prevented from peeling from a 2nd contact bonding layer in a dicing process. Can be adjusted. Moreover, in the adhesive sheet of this invention, since at least one part of the outer periphery of a die bonding film is in contact with a 2nd contact bonding layer, the outer periphery of a die bonding film adheres to the 2nd contact bonding layer to which the adhesive force was adjusted. As a result, in the dicing step, the outer peripheral portion of the die bonding film becomes a peeling starting point, and peeling of the die bonding film is suppressed, so that scattering of chips can be suppressed.

다이 본딩 필름의 외주 중 적어도 일부는, 제2 접착층과 중첩되어 있는 것이 바람직하다. 이 경우에, 다이싱 공정에 있어서 다이 본딩 필름의 외주 부분이 박리 기점이 되어서 다이 본딩 필름이 박리되는 것이 더욱 억제되므로, 칩의 비산을 더욱 억제할 수 있다. 또한, 이와 같은 구성에 의하면, 접착 시트를 롤형으로 권취하였을 때, 다이 본딩 필름과 제2 접착층의 중첩 부분에 의해 다이 본딩 필름의 중앙 부분이 보호되어 다이 본드 필름에 귄취흔(卷取痕)이 전사(轉寫)되는 것을 억제할 수 있다.It is preferable that at least one part of the outer periphery of the die bonding film overlaps with a 2nd contact bonding layer. In this case, since the outer peripheral part of a die bonding film becomes a starting point of peeling in a dicing process, and peeling off of a die bonding film is further suppressed, scattering of a chip can be suppressed further. Moreover, according to such a structure, when winding up an adhesive sheet in roll shape, the center part of a die bonding film is protected by the overlapping part of a die bonding film and a 2nd contact bonding layer, and a frit trace is found on a die bond film. The transfer can be suppressed.

또한, 제2 접착층의 내주 중 적어도 일부가, 다이 본딩 필름과 중첩되어 있는 것도 바람직하다. 이와 같은 구성에 있어서도, 접착 시트를 롤형으로 권취하였을 때, 다이 본딩 필름과 제2 접착층의 중첩 부분에 의해 다이 본딩 필름의 중앙 부분이 보호되어 다이 본드 필름에 권취흔이 전사되는 것을 억제할 수 있다.Moreover, it is also preferable that at least one part of the inner periphery of a 2nd contact bonding layer overlaps with a die bonding film. Also in such a configuration, when the adhesive sheet is wound into a roll, the center portion of the die bonding film is protected by the overlapping portion of the die bonding film and the second adhesive layer, and the transfer of the winding traces to the die bond film can be suppressed. .

다이 본딩 필름과 제2 접착층의 중첩 부분의 폭은, 0.1∼25 mm인 것이 바람직하다.It is preferable that the width | variety of the overlap part of a die bonding film and a 2nd contact bonding layer is 0.1-25 mm.

본 발명의 접착 시트는, 다이싱 가공 및 다이 본딩 가공에 사용된다.The adhesive sheet of this invention is used for a dicing process and die bonding process.

본 발명에 의하면, 픽업 공정에 있어서의 다이 본딩 필름과 다이싱 시트 사이의 박리 용이성을 유지하면서, 다이싱 공정에 있어서의 링 프레임의 박리 및 칩의 비산을 억제할 수 있는 접착 시트가 제공된다. 본 발명에서는, 개편화(個片化)된, 다이 본딩 필름이 부착된 반도체칩을 용이하게 픽업할 수 있으므로, 반도체 장치의 수율을 향상시킬 수 있다.ADVANTAGE OF THE INVENTION According to this invention, the adhesive sheet which can suppress peeling of the ring frame and scattering of a chip in a dicing process is provided, maintaining the peelability between the die bonding film and a dicing sheet in a pick-up process. In this invention, since the semiconductor chip with a die bonding film separated into pieces can be picked up easily, the yield of a semiconductor device can be improved.

도 1은 접착 시트의 일실시형태를 나타낸 평면도이다.
도 2는 도 1의 II-II선을 따라 절단한 모식 단면도이다.
도 3은 접착 시트에 반도체 웨이퍼 및 링 프레임을 접착한 적층물을 나타내는 모식 단면도이다.
도 4는 반도체 웨이퍼를 다이싱 블레이드로 다이싱하는 공정을 나타낸 모식 단면도이다.
도 5는 개편화된, 다이 본딩 필름이 부착된 반도체칩을 픽업하는 공정을 나타낸 모식 단면도이다.
도 6은 픽업된, 다이 본딩 필름이 부착된 반도체칩을 사용한 반도체 장치를 나타낸 모식 단면도이다.
도 7의 (a)는, 종래의 접착 시트의 일례를 나타낸 평면도이며, (b)는, (a)의 X-X선을 따라 절단한 단면도이다.
도 8은 도 7에 나타낸 접착 시트의 롤체를 나타낸 사시도이다.
도 9의 (a)는, 도 7에 나타낸 접착 시트에 있어서의 권취흔의 상태를 나타낸 평면도이며, (b)는, (a)의 Y-Y선을 따라 절단한 단면도이다.
도 10의 (a)는, 종래의 접착 시트의 다른 예를 나타낸 평면도며, (b)는, (a)의 Z-Z선을 따라 절단한 단면도이다.
도 11은 접착 시트의 변형예를 나타내는 모식 단면도이다.1 is a plan view showing an embodiment of an adhesive sheet.
FIG. 2 is a schematic sectional view taken along the line II-II of FIG. 1. FIG.
It is a schematic cross section which shows the laminated body which adhere | attached the semiconductor wafer and the ring frame to the adhesive sheet.
It is a schematic cross section which shows the process of dicing a semiconductor wafer with a dicing blade.
FIG. 5: is a schematic cross section which shows the process of picking up the semiconductor chip with a die-bonding film separated into pieces.
FIG. 6: is a schematic cross section which shows the semiconductor device using the semiconductor chip with a die bonding film picked up.
(A) is a top view which shows an example of the conventional adhesive sheet, (b) is sectional drawing cut along the XX line of (a).
It is a perspective view which shows the roll body of the adhesive sheet shown in FIG.
(A) is a top view which shows the state of the winding trace in the adhesive sheet shown in FIG. 7, (b) is sectional drawing cut along the YY line of (a).
(A) is a top view which shows the other example of the conventional adhesive sheet, (b) is sectional drawing cut along the ZZ line of (a).
It is a schematic cross section which shows the modification of an adhesive sheet.

이하에서, 본 발명의 바람직한 실시형태에 대하여 필요하다면 도면을 참조하여 상세하게 설명한다. 도면 중, 동일하거나 또는 동등한 구성 요소에 대해서는 동일한 부호를 부여하고, 중복되는 설명은 적절하게 생략한다.EMBODIMENT OF THE INVENTION Hereinafter, preferred embodiment of this invention is described in detail with reference to drawings, if needed. In the drawings, the same or equivalent components are denoted by the same reference numerals, and overlapping descriptions are appropriately omitted.

도 1은, 접착 시트의 일실시형태를 나타낸 평면도며, 도 2는, 도 1의 II-II선을 따라 절단한 모식 단면도이다. 도 3은, 접착 시트에 반도체 웨이퍼 및 링 프레임을 부착한 적층물을 나타내는 모식 단면도이다.1: is a top view which shows one Embodiment of an adhesive sheet, and FIG. 2 is a schematic cross section cut along the II-II line of FIG. 3 is a schematic cross-sectional view showing a laminate in which a semiconductor wafer and a ring frame are attached to an adhesive sheet.

도 1, 2에 나타낸 반도체 장치 제조용 접착 시트(다이 어태치 필름 일체형 시트)(1)는, 장척(長尺)의 기재 필름(10), 장척의 접착층(제1 접착층)(20), 접착층(제2 접착층)(30), 및 다이 본딩 필름(40)을 구비한다. 반도체 장치 제조용 접착 시트(1) 상에는, 도 3에 나타낸 바와 같이, 링 프레임(다이싱링)(50)과 반도체 웨이퍼(60)가 배치된다.The adhesive sheet (die-attach film integrated sheet) 1 for semiconductor device manufacture shown in FIGS. 1 and 2 is a long base film 10, a long adhesive layer (first adhesive layer) 20, and an adhesive layer ( 2nd adhesive layer) 30 and the die bonding film 40 are provided. On the adhesive sheet 1 for semiconductor device manufacture, as shown in FIG. 3, the ring frame (dicing ring) 50 and the semiconductor wafer 60 are arrange | positioned.

기재 필름(10)으로서는, 예를 들면, 폴리에틸렌 필름, 폴리프로필렌 필름, 폴리염화 비닐 필름, 폴리에틸렌테레프탈레이트 필름, 에틸렌-아세트산 비닐 공중합체 필름, 아이오노머 수지 필름 등이 사용된다. 기재 필름(10)의 두께는, 예를 들면, 15∼200 ㎛ 정도가 바람직하다.As the base film 10, a polyethylene film, a polypropylene film, a polyvinyl chloride film, a polyethylene terephthalate film, an ethylene-vinyl acetate copolymer film, an ionomer resin film, etc. are used, for example. As for the thickness of the base film 10, about 15-200 micrometers is preferable, for example.

접착층(20)은, 기재 필름(10)의 한쪽 주면(主面) 전체를 덮도록 배치되어 있다. 접착층(20)의 두께는, 예를 들면, 5∼50 ㎛ 정도가 바람직하다. 접착층(20)을 구성하는 접착제로서는, 예를 들면, 아크릴계 접착제, 고무계 접착제, 실리콘계 접착제 등이 사용된다.The contact bonding layer 20 is arrange | positioned so that the whole one main surface of the base film 10 may be covered. As for the thickness of the contact bonding layer 20, about 5-50 micrometers is preferable, for example. As an adhesive which comprises the adhesive layer 20, an acrylic adhesive, a rubber adhesive, a silicone adhesive, etc. are used, for example.

접착층(20)은, 픽업 공정에 있어서 다이 본딩 필름(40)으로부터 용이하게 박리 가능한 약접착성 감압 접착제층이다. 접착층(20)과 다이 본딩 필름(40) 사이의 접착력은, 0.6N/25mm 이하가 바람직하고, 0.4N/25mm 이하가 보다 바람직하며, 0.3N/25mm 이하가 더욱 바람직하다. 접착층(20)이 전술한 바와 같은 접착력을 가지고 있으면, 픽업 공정에 있어서 접착층(20)과 다이 본딩 필름(40) 사이에서 용 이하게 박리 가능하게 된다. 접착층(20)의 접착력은, 예를 들면, 오리엔테크에서 제조한 「텐실론 인장 강도 시험기 RTA-100형」 또는 이와 유사한 시험기를 사용하여 수직 방향(90°박리)으로 200mm/min의 속도로 박리할 때의 박리력으로 측정할 수 있다.The adhesive layer 20 is a weakly adhesive pressure-sensitive adhesive layer that can be easily peeled from the die bonding film 40 in the pickup step. As for the adhesive force between the contact bonding layer 20 and the die bonding film 40, 0.6 N / 25 mm or less is preferable, 0.4 N / 25 mm or less is more preferable, 0.3 N / 25 mm or less is more preferable. If the adhesive layer 20 has the adhesive force mentioned above, it can peel easily between the adhesive layer 20 and the die bonding film 40 in a pick-up process. The adhesive force of the adhesive layer 20 is peeled at a speed of 200 mm / min in the vertical direction (90 ° peeling) using, for example, "Tensilon Tensile Strength Tester RTA-100 type" manufactured by Orient Tech, or a similar tester. It can measure by the peeling force at the time of doing.

접착층(30)은, 기재 필름(10)의 길이 방향을 따라 소정 간격을 두고 접착층(20) 상에 복수개 배치되어 있다. 접착층(30)은, 접착층(20)에서의 링 프레임(50)의 부착 예정 영역에 배치되어 있다.A plurality of adhesive layers 30 are disposed on the adhesive layer 20 at predetermined intervals along the longitudinal direction of the base film 10. The adhesive layer 30 is disposed in the region to be attached to the ring frame 50 in the adhesive layer 20.

각 접착층(30)은, 예를 들면, 원환형을 이루고 있고, 각 접착층(30)의 중앙부에는, 단면 원형상의 개구(30a)가 접착층(30)의 표면으로부터 배면에 걸쳐 형성되어 있다. 접착층(20)에서의 개구(30a)로부터 노출되는 부분(25)은, 다이 본딩 필름(40)의 부착 예정 영역이 된다. 접착층(30)의 개구(30a)의 직경은, 반도체 웨이퍼(60)의 웨이퍼 직경 이상인 것이 바람직하고, 반도체 웨이퍼(60)의 웨이퍼 직경보다 큰 것이 보다 바람직하다. 또한, 접착층(30)의 개구(30a)의 직경은, 링 프레임(50)의 개구(50a)의 내경 치수 이하인 것이 바람직하고, 링 프레임(50)의 개구(50a)의 내경 치수보다 작은 것이 보다 바람직하다. 접착층(30)의 개구(30a)의 직경은, 예를 들면, 210mm 정도이다. 접착층(30)의 두께는, 예를 들면, 5∼30 ㎛ 정도가 바람직하다.Each adhesive layer 30 has an annular shape, for example, and a circular cross section opening 30a is formed in the center of each adhesive layer 30 from the surface of the adhesive layer 30 to the back surface. The portion 25 exposed from the opening 30a in the adhesive layer 20 becomes a region to be attached to the die bonding film 40. It is preferable that the diameter of the opening 30a of the adhesive layer 30 is more than the wafer diameter of the semiconductor wafer 60, and it is more preferable that it is larger than the wafer diameter of the semiconductor wafer 60. FIG. Moreover, it is preferable that the diameter of the opening 30a of the adhesive layer 30 is below the inner diameter dimension of the opening 50a of the ring frame 50, and it is more smaller than the inner diameter dimension of the opening 50a of the ring frame 50. desirable. The diameter of the opening 30a of the adhesive layer 30 is about 210 mm, for example. As for the thickness of the contact bonding layer 30, about 5-30 micrometers is preferable, for example.

접착층(30)은, 다이싱 공정에 있어서 링 프레임(50)을 확실하게 유지할 수 있는 접착성을 가지는 링 프레임 고정용 강접착성층이다. 접착층(30)을 구성하는 접착제로서는, 예를 들면, 아크릴계 접착제, 고무계 접착제, 실리콘계 접착제 등이 사용된다. 접착층(30)의 접착력은, 접착층(20)의 접착력보다 커지도록 조정된다.The adhesive layer 30 is a strong adhesive layer for fixing the ring frame, which has adhesiveness capable of reliably holding the ring frame 50 in the dicing step. As an adhesive which comprises the adhesive layer 30, an acrylic adhesive, a rubber adhesive, a silicone adhesive etc. are used, for example. The adhesive force of the adhesive layer 30 is adjusted to be larger than the adhesive force of the adhesive layer 20.

접착층(30)과 링 프레임(50) 사이의 접착력은, 접착층(30)과 접착층(20) 사이의 접착력보다 작으면서, 0.6N/25mm 이상인 것이 바람직하다. 접착층(30)과 링 프레임(50) 사이의 접착력은, 0.8N/25mm 이상이 보다 바람직하고, 1.0N/25mm 이상이 더욱 바람직하다. 접착층(30)이 전술한 바와 같은 접착력을 가지고 있으면, 다이싱 공정에 있어서 접착층(30)으로부터 링 프레임(50)이 박리되는 것이 더욱 억제된다. 접착층(30)의 접착력은, 예를 들면, 오리엔테크에서 제조한 「텐실론 인장 강도 시험기 RTA-100형」 또는 이와 유사한 시험기를 사용하여 수직 방향(90°박리)으로 200mm/min의 속도로 박리할 때의 박리력으로 측정할 수 있다.It is preferable that the adhesive force between the adhesive layer 30 and the ring frame 50 is 0.6 N / 25 mm or more while being smaller than the adhesive force between the adhesive layer 30 and the adhesive layer 20. As for the adhesive force between the contact bonding layer 30 and the ring frame 50, 0.8 N / 25 mm or more is more preferable, 1.0 N / 25 mm or more is more preferable. If the adhesive layer 30 has the adhesive force mentioned above, peeling off of the ring frame 50 from the adhesive layer 30 in a dicing process is further suppressed. The adhesive force of the adhesive layer 30 is peeled at a speed of 200 mm / min in the vertical direction (90 ° peeling) using, for example, a "Tensilon tensile strength tester RTA-100 type" manufactured by Orient Tech, or a similar tester. It can measure by the peeling force at the time of doing.

접착층(20)의 폭 방향의 양 단부(端部)에는, 접착층(30)의 형상을 따르도록 접착층(30)과 이격되어 접착층(32)이 배치되어 있다. 접착층(32)은, 접착층(30)과 동일한 접착제에 의해 구성되어 있다.At both ends in the width direction of the adhesive layer 20, the adhesive layer 32 is disposed to be spaced apart from the adhesive layer 30 so as to follow the shape of the adhesive layer 30. The adhesive layer 32 is comprised by the same adhesive agent as the adhesive layer 30. FIG.

다이 본딩 필름(40)은, 예를 들면, 원형상을 이루고 있다. 다이 본딩 필름(40)의 두께는, 예를 들면, 1∼100 ㎛ 정도가 바람직하다. 다이 본딩 필름(40)은, 예를 들면, 열경화성 성분 및/또는 열가소성 수지 및 필러를 함유한다. 열경화성 성분은, 가열에 의해 가교되어 경화체를 형성할 수 있는 성분이며, 예를 들면, 열경화성 수지를 함유하고, 상기 열경화성 수지의 경화제를 임의로 함유한다. 열경화성 수지로서는, 종래 공지의 것을 사용할 수 있으며, 특별히 제한은 없지만, 그 중에서도 반도체 주변 재료로서의 편리성(고순도품 입수 용이성, 종류의 다양성, 반응성 제어 용이성)의 면에서, 에폭시 수지, 및 1분자 중에 적어도 2개의 열경화성 이미드기를 가지는 이미드 화합물이 바람직하다. 에폭시 수지는, 통상적으로 에폭시 수지 경화제와 병용된다.The die bonding film 40 has comprised circular shape, for example. The thickness of the die bonding film 40 is preferably about 1 to 100 mu m, for example. The die bonding film 40 contains a thermosetting component and / or a thermoplastic resin and a filler, for example. A thermosetting component is a component which can be bridge | crosslinked by heating, and can form a hardened | cured material, For example, it contains a thermosetting resin and optionally contains the hardening | curing agent of the said thermosetting resin. As a thermosetting resin, a conventionally well-known thing can be used, There is no restriction | limiting in particular, Especially, in terms of the convenience (easiness of obtaining high purity products, the variety of kinds, and the ease of control of reactivity) as a semiconductor peripheral material, in an epoxy resin and one molecule, The imide compound which has at least 2 thermosetting imide groups is preferable. An epoxy resin is normally used together with an epoxy resin hardener.

에폭시 수지는, 2개 이상의 에폭시기를 가지는 화합물이 바람직하다. 에폭시 수지로서는, 경화성이나 경화물 특성의 면에서, 페놀의 글리시딜에테르형 에폭시 수지가 바람직하다. 페놀의 글리시딜에테르형 에폭시 수지로서는, 예를 들면, 비스페놀 A, 비스페놀 AD, 비스페놀 S, 비스페놀 F 또는 할로겐화 비스페놀 A와 에피클로로하이드린의 축합물, 페놀 노볼락 수지의 글리시딜에테르, 크레졸 노볼락 수지의 글리시딜에테르, 및 비스페놀 A 노볼락 수지의 글리시딜에테르가 있다. 이들 중에서도, 노볼락형 에폭시 수지(크레졸 노볼락 수지의 글리시딜에테르 및 페놀 노볼락 수지의 글리시딜에테르 등)는, 경화물의 가교 밀도가 높고, 필름의 가열 시(thermal time)의 접착 강도를 높게 할 수 있는 면에서 바람직하다. 이들은 1종 단독으로 또는 복수 종류를 조합하여 사용할 수 있다.The epoxy resin is preferably a compound having two or more epoxy groups. As an epoxy resin, the glycidyl ether type epoxy resin of a phenol is preferable at the point of curability and hardened | cured material characteristic. Examples of the glycidyl ether type epoxy resins of phenol include bisphenol A, bisphenol AD, bisphenol S, bisphenol F or condensates of halogenated bisphenol A and epichlorohydrin, and glycidyl ethers of phenol novolac resins and cresols. Glycidyl ethers of novolac resins, and glycidyl ethers of bisphenol A novolac resins. Among these, novolak-type epoxy resins (glycidyl ether of cresol novolak resin, glycidyl ether of phenol novolak resin, etc.) have a high crosslinking density of the cured product, and have an adhesive strength at the time of heating the film. It is preferable at the point which can make high. These can be used individually by 1 type or in combination of multiple types.

에폭시 수지 경화제로서는, 예를 들면, 페놀계 화합물, 지방족 아민, 지환족아민, 방향족 폴리아민, 폴리아미드, 지방족 산무수물, 지환족 산무수물, 방향족 산무수물, 디시안디아미드, 유기산 디하이드라지드, 3불화 붕소 아민 착체, 이미다졸류, 및 제3급 아민이 있다. 이들 중에서도 페놀계 화합물이 바람직하고, 그 중에서도 2개 이상의 페놀성 수산기를 가지는 페놀계 화합물이 특히 바람직하다. 보다 구체적으로는, 나프톨 노볼락 수지 및 트리스페놀 노볼락 수지가 바람직하다. 이들 페놀계 화합물을 에폭시 수지 경화제로서 사용하면, 패키지 조립을 위한 가열 시의 칩 표면 및 장치의 오염이나, 악취의 원인이 되는 아웃 가스의 발생을 유효하게 저감시킬 수 있다.As an epoxy resin hardening | curing agent, a phenol type compound, aliphatic amine, alicyclic amine, aromatic polyamine, polyamide, aliphatic acid anhydride, alicyclic acid anhydride, aromatic acid anhydride, dicyandiamide, organic acid dihydrazide, 3 Boron fluoride amine complexes, imidazoles, and tertiary amines. Among these, a phenolic compound is preferable, and the phenolic compound which has 2 or more phenolic hydroxyl group is especially preferable. More specifically, naphthol novolak resin and trisphenol novolak resin are preferable. When these phenolic compounds are used as an epoxy resin hardening | curing agent, contamination of the chip surface and apparatus at the time of heating for package assembly, and generation | occurrence | production of the outgas which become a cause of a bad smell can be reduced effectively.

열가소성 수지로서는, 예를 들면, 폴리이미드 수지, 폴리아미드이미드 수지, 페녹시 수지, 아크릴 수지, 폴리아미드 수지 및 우레탄 수지가 있다. 이들은 1종 단독으로 또는 복수 종류를 조합하여 사용할 수 있다.Examples of the thermoplastic resins include polyimide resins, polyamideimide resins, phenoxy resins, acrylic resins, polyamide resins, and urethane resins. These can be used individually by 1 type or in combination of multiple types.

필러는, 무기 필러인 것이 바람직하다. 보다 구체적으로는, 수산화 알루미늄, 수산화 마그네슘, 탄산 칼슘, 탄산 마그네슘, 규산 칼슘, 규산 마그네슘, 산화칼슘, 산화 마그네슘, 알루미나, 질화 알루미늄, 붕산 알루미늄 위스커, 질화 붕소, 결정성 실리카, 비결정성 실리카 및 안티몬 산화물로 이루어지는 군으로부터 선택되는 적어도 1종의 무기 재료를 포함하는 무기 필러가 바람직하다. 이들 중에서도, 열전도성 향상을 위해서는, 알루미나, 질화 알루미늄, 질화 붕소, 결정성 실리카 및 비결정성 실리카가 바람직하다. 용융 점도의 조정이나 틱소트로피성을 부여할 목적으로는, 수산화 알루미늄, 수산화 마그네슘, 탄산 칼슘, 탄산 마그네슘, 규산 칼슘, 규산 마그네슘, 산화 칼슘, 산화 마그네슘, 알루미나, 결정성 실리카 및 비결정성 실리카가 바람직하다. 또한, 내습성(耐濕性)을 향상시키기 위해서는, 알루미나, 실리카, 수산화 알루미늄 및 안티몬 산화물이 바람직하다. 이들은 1종 단독으로 또는 복수 종류를 조합하여 사용할 수 있다.It is preferable that a filler is an inorganic filler. More specifically, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, amorphous silica and antimony Inorganic fillers containing at least one inorganic material selected from the group consisting of oxides are preferred. Among these, in order to improve thermal conductivity, alumina, aluminum nitride, boron nitride, crystalline silica and amorphous silica are preferable. For the purpose of adjusting melt viscosity and imparting thixotropy, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, crystalline silica and amorphous silica are preferred. Do. Moreover, in order to improve moisture resistance, alumina, silica, aluminum hydroxide, and antimony oxide are preferable. These can be used individually by 1 type or in combination of multiple types.

다이 본딩 필름(40)은, 개구(30a)와 동심(同心)을 이루도록 접착층(30)의 개구(30a) 내에 배치되어 있고, 접착층(20)에서의 개구(30a)로부터 노출되는 부분(25) 전체를 덮고 있다. 또한, 다이 본딩 필름(40)의 외주 부분(40a)은, 개구(30a)로부터 돌출되어 있고, 접착층(30)의 표면 내주측의 둘레부에 접한 상태에서 접착층(30)과 중첩되어 있다. 즉, 다이 본딩 필름(40)은, 접착층(30)과 중첩되어 있는 외주 부분(40a)과, 접착층(30)과 중첩되지 않는 중앙 부분(40b)을 가지고 있다. 다이 본딩 필름(40)은, 외주 중 적어도 일부가 접착층(30)에 접하고 있으면, 다이싱 공정에서의 다이 본딩 필름(40)의 박리를 억제할 수 있지만, 다이싱 공정에서의 박리를 더욱 억제하는 관점에서, 외주 부분(40a) 중 적어도 일부가 접착층(30)과 중첩되어 있는 것이 바람직하고, 외주 부분(40a) 전체가 다이 본딩 필름(40)의 외주를 따라 접착층(30)과 중첩되어 있는 것이 보다 바람직하다.The die bonding film 40 is disposed in the opening 30a of the adhesive layer 30 so as to be concentric with the opening 30a, and is exposed to the opening 25a in the adhesive layer 20. Covering the whole. Moreover, the outer peripheral part 40a of the die bonding film 40 protrudes from the opening 30a, and overlaps with the adhesive layer 30 in the state which contacted the peripheral part of the surface inner peripheral side of the adhesive layer 30. As shown in FIG. That is, the die bonding film 40 has the outer peripheral part 40a which overlaps with the contact bonding layer 30, and the center part 40b which does not overlap with the contact bonding layer 30. FIG. The die bonding film 40 can suppress the peeling of the die bonding film 40 in the dicing step if at least a part of the outer circumference is in contact with the adhesive layer 30, but further suppresses the peeling in the dicing step. In view of the above, it is preferable that at least a part of the outer circumferential portion 40a overlaps the adhesive layer 30, and that the entire outer circumferential portion 40a overlaps the adhesive layer 30 along the outer circumference of the die bonding film 40. More preferred.

접착층(30)과 다이 본딩 필름(40)과의 중첩 범위(폭)는, 0.1∼25 mm가 바람직하고, 0.5∼15 mm가 보다 바람직하고, 1.0∼10 mm가 더욱 바람직하다. 다이 본딩 필름(40)의 중첩 범위가 전술한 범위에 있으면, 라미네이팅 공정에 있어서, 다이 본딩 필름(40)의 접착층(20)에 접하고 있는 부분[상기 중앙 부분(40b)]만을 반도체 웨이퍼(60)에 부착 가능하며, 또한 다이싱 공정에 있어서 다이 본딩 필름(40)의 외주 부분(40a)이 접착층(30)으로부터 박리되는 박리 기점이 되는 것이 더욱 억제되므로, 반도체칩의 비산이 더욱 억제된다.0.1-25 mm is preferable, as for the overlapping range (width) of the contact bonding layer 30 and the die bonding film 40, 0.5-15 mm is more preferable, 1.0-10 mm is more preferable. When the overlapping range of the die bonding film 40 exists in the above-mentioned range, in the laminating process, only the part which contact | connects the adhesive layer 20 of the die bonding film 40 (the said center part 40b) is the semiconductor wafer 60 It can be attached to the film, and furthermore, since the outer peripheral portion 40a of the die bonding film 40 is peeled off from the adhesive layer 30 in the dicing process, the scattering of the semiconductor chip is further suppressed.

접착층(30)과 다이 본딩 필름(40) 사이의 접착력은, 0.8N/25mm 이상이 바람직하고, 1.0N/25mm 이상이 보다 바람직하고, 1.2N/25mm 이상이 더욱 바람직하다. 접착층(30)이 전술한 접착력을 가지고 있으면, 다이싱 공정에 있어서 접착층(30)으로부터 다이 본딩 필름(40)이 박리되는 것이 더욱 억제된다. 접착층(30)의 접착력은, 예를 들면, 오리엔테크에서 제조한 「텐실론 인장 강도 시험기 RTA-100형」 또는 이와 유사한 시험기를 사용하여 수직 방향((90°박리)으로 200mm/min의 속도로 박리할 때의 박리력을 사용하여 측정할 수 있다.0.8N / 25mm or more is preferable, as for the adhesive force between the contact bonding layer 30 and the die bonding film 40, 1.0N / 25mm or more is more preferable, 1.2N / 25mm or more is more preferable. If the adhesive layer 30 has the adhesive force mentioned above, peeling of the die bonding film 40 from the adhesive layer 30 in a dicing process is further suppressed. The adhesive force of the adhesive layer 30 is, for example, at a speed of 200 mm / min in the vertical direction ((90 ° peeling) using a "Tensilon tensile strength tester RTA-100 type" manufactured by Orient Tech, or a similar tester). It can measure using the peeling force at the time of peeling.

링 프레임(50)은, 통상은 금속제 또는 플라스틱제의 성형체이다. 링 프레임(50)은, 예를 들면, 대략 원환형을 이루고 있고, 링 프레임(50) 외주의 일부에는, 가이드용 평탄 커팅부(도시하지 않음)가 형성되어 있다. 링 프레임(50)은, 중앙부에 개구(50a)를 가지고 있다. 링 프레임(50)의 개구(50a)의 내경 치수(직경)는, 다이싱되는 반도체 웨이퍼(60)의 웨이퍼 직경보다 약간 큰 것은 물론이며, 접착층(30)의 개구(30a)의 직경 이상이 되도록 조정되어 있다. 그리고, 링 프레임(50)의 형상은, 원환형으로 한정되지 않고, 종래부터 사용되고 있는 다양한 형상(예를 들면, 직사각형 환형)이 사용된다.The ring frame 50 is usually a molded body made of metal or plastic. The ring frame 50 has a substantially annular shape, for example, and a flat cutting part (not shown) for guides is formed in a part of the outer periphery of the ring frame 50. The ring frame 50 has an opening 50a in the center part. The inner diameter dimension (diameter) of the opening 50a of the ring frame 50 is, of course, slightly larger than the wafer diameter of the semiconductor wafer 60 to be diced, and is equal to or larger than the diameter of the opening 30a of the adhesive layer 30. It is adjusted. The shape of the ring frame 50 is not limited to an annular shape, and various shapes (for example, rectangular annular shapes) conventionally used are used.

링 프레임(50)은, 개구(50a)가 개구(30a)와 동심을 이루도록 접착층(30) 상에 배치되어 있다. 링 프레임(50)은, 다이 본딩 필름(40)에서의 접착층(30)과 중첩되는 부분[외주 부분(40a)]과 중첩되지 않고 배치되어 있다.The ring frame 50 is disposed on the adhesive layer 30 so that the opening 50a is concentric with the opening 30a. The ring frame 50 is arrange | positioned without overlapping the part (outer peripheral part 40a) which overlaps with the contact bonding layer 30 in the die bonding film 40. As shown in FIG.

반도체 웨이퍼(60)는, 접착층(30)과 다이 본딩 필름(40)의 외주 부분(40a)과 중첩되지 않으며, 다이 본딩 필름(40)의 중앙 부분(40b)에 배치된다. 반도체 웨이퍼(60)에는, 필요한 전처리를 거쳐 회로가 형성되어 있다. 다이싱 공정에 있어서, 반도체 웨이퍼(60)가 회로마다 개편화된 반도체칩을 얻을 수 있다.The semiconductor wafer 60 does not overlap with the outer peripheral portion 40a of the adhesive layer 30 and the die bonding film 40, and is disposed at the center portion 40b of the die bonding film 40. The circuit is formed in the semiconductor wafer 60 through necessary preprocessing. In the dicing step, a semiconductor chip in which the semiconductor wafer 60 is separated into circuits can be obtained.

반도체 장치 제조용 접착 시트(1)는, 다이싱 가공 및 다이 본딩 가공에 사용된다. 반도체 장치 제조용 접착 시트(1)에서는, 상기 시트가 접착층(20)과는 별도로 접착층(30)을 구비함으로써, 접착층(20)의 접착력과 접착층(30)의 접착력을 개별적으로 조정할 수 있다. 이에 따라, 픽업 공정에 있어서 다이 본딩 필름(40) 및 다이싱 시트의 접착층(20) 사이의 박리가 용이해지도록 접착층(20)의 접착력을 조정하면서, 다이싱 공정에 있어서 링 프레임(50)이 접착층(30)으로부터 박리되지 않도록 접착층(30)의 접착력을 조정할 수 있다. 또한, 반도체 장치 제조용 접착 시트(1)에서는, 다이 본딩 필름(40)의 외주 부분(40a)이 접착층(30)에 접하는 것에 의해, 접착력이 조정된 접착층(30)에 외주 부분(40a)이 접착하게 된다. 이에 따라, 다이싱 공정에 있어서 다이 본딩 필름(40)의 외주 부분(40a)이 박리 기점이 되어서 다이 본딩 필름(40)이 박리되는 것이 억제되므로, 칩의 비산을 억제할 수 있다. 또한, 반도체 장치 제조용 접착 시트(1)에서는, 다이 본딩 필름(40)의 외주 부분(40a)이 접착층(30)과 중첩되어 있으므로, 다이싱 공정에 있어서 다이 본딩 필름(40)의 박리가 더욱 억제되므로, 칩의 비산을 더욱 억제할 수 있다.The adhesive sheet 1 for semiconductor device manufacture is used for a dicing process and die bonding process. In the adhesive sheet 1 for semiconductor device manufacture, since the said sheet is provided with the adhesive layer 30 separately from the adhesive layer 20, the adhesive force of the adhesive layer 20 and the adhesive force of the adhesive layer 30 can be adjusted individually. Accordingly, the ring frame 50 in the dicing step is adjusted while adjusting the adhesive force of the adhesive layer 20 so that peeling between the die bonding film 40 and the adhesive layer 20 of the dicing sheet becomes easy in the pick-up step. The adhesive force of the adhesive layer 30 can be adjusted so as not to peel from the adhesive layer 30. Moreover, in the adhesive sheet 1 for semiconductor device manufacture, the outer peripheral part 40a of the die bonding film 40 contact | connects the adhesive layer 30, and the outer peripheral part 40a adheres to the adhesive layer 30 with which the adhesive force was adjusted. Done. Thereby, since the outer peripheral part 40a of the die bonding film 40 becomes a peeling starting point in a dicing process, and peeling of the die bonding film 40 is suppressed, scattering of a chip can be suppressed. Moreover, in the adhesive sheet 1 for semiconductor device manufacture, since the outer peripheral part 40a of the die bonding film 40 overlaps with the adhesive layer 30, peeling of the die bonding film 40 is further suppressed in a dicing process. Therefore, the scattering of the chip can be further suppressed.

다음으로, 반도체 장치 제조용 접착 시트(1)를 사용한 반도체 장치의 제조 방법에 대하여 설명한다. 도 4는, 반도체 웨이퍼를 다이싱 블레이드로 다이싱하는 공정을 나타낸 모식 단면도이다. 도 5는, 개편화된, 다이 본딩 필름이 부착된 반도체칩을 픽업하는 공정을 나타낸 모식 단면도이다. 도 6은, 픽업한, 다이 본딩 필름이 부착된 반도체칩을 사용한 반도체 장치를 나타낸 모식 단면도이다.Next, the manufacturing method of the semiconductor device using the adhesive sheet 1 for semiconductor device manufacture is demonstrated. 4: is a schematic cross section which shows the process of dicing a semiconductor wafer with a dicing blade. FIG. 5: is a schematic cross section which shows the process of picking up the semiconductor chip with a die-bonding film separated into pieces. FIG. 6: is a schematic cross section which shows the semiconductor device using the semiconductor chip with a die bonding film picked up.

반도체 장치 제조용 접착 시트(1)에 반도체 웨이퍼(60)가 적층된 적층체는, 다이 본딩 필름(40)과 기재층이 적층된 접착 필름, 및 다이 본딩 필름(40)과 접착층[접착층(20) 및 접착층(30)]과 기재층이 이 순서로 적층된 접착 필름의 어느 것을 사용해도 얻을 수 있다.The laminated body in which the semiconductor wafer 60 was laminated | stacked on the adhesive sheet 1 for semiconductor device manufacture is the adhesive film in which the die-bonding film 40 and the base material layer were laminated | stacked, and the die-bonding film 40 and the adhesive layer (adhesive layer 20). And the adhesive layer 30] and the base material layer can also be obtained by using any of the adhesive films laminated in this order.

다이 본딩 필름(40)과 기재층이 적층된 접착 필름을 사용하는 경우, 예를 들면, 이하의 (1), (2)에 나타내는 어느 하나의 방법을 사용할 수 있다.When using the adhesive film in which the die bonding film 40 and the base material layer were laminated | stacked, for example, any method shown to the following (1) and (2) can be used.

(1) 먼저, 접착 필름의 다이 본딩 필름(40)과 반도체 웨이퍼(60)를 접합시킨다. 다음으로, 접착 필름의 기재층을 박리하고, 다이 본딩 필름(40)과, 접착층[접착층(20) 및 접착층(30)] 및 기재층이 적층된 다이싱 테이프의 접착층을 접합시킨다.(1) First, the die bonding film 40 of the adhesive film and the semiconductor wafer 60 are bonded together. Next, the base material layer of an adhesive film is peeled off, and the die bonding film 40, the adhesive layer (adhesive layer 20 and the adhesive layer 30), and the adhesive layer of the dicing tape in which the base material layer were laminated | stacked are bonded.

(2) 먼저, 접착 필름의 다이 본딩 필름(40)과, 접착층[접착층(20) 및 접착층(30)] 및 기재층이 적층된 다이싱 테이프의 접착층을 접합시킨다. 다음으로, 접착 필름의 기재층을 박리하고, 다이 본딩 필름(40)과 반도체 웨이퍼(60)를 접합시킨다.(2) First, the die bonding film 40 of an adhesive film, the adhesive layer (adhesive layer 20 and the adhesive layer 30), and the adhesive layer of the dicing tape in which the base material layer were laminated | stacked are bonded together. Next, the base material layer of an adhesive film is peeled off, and the die bonding film 40 and the semiconductor wafer 60 are bonded together.

다이 본딩 필름(40), 접착층, 및 기재층이 이 순서로 적층된 접착 필름을 사용하는 경우에는, 접착 필름의 다이 본딩 필름(40)과 반도체 웨이퍼(60)를 접합시킴으로써, 반도체 장치 제조용 접착 시트(1)에 반도체 웨이퍼(60)가 적층된 적층체를 얻을 수 있다.When using the adhesive film in which the die bonding film 40, the contact bonding layer, and the base material layer were laminated | stacked in this order, the adhesive sheet for semiconductor device manufacture is bonded by bonding the die bonding film 40 of an adhesive film and the semiconductor wafer 60. FIG. The laminate in which the semiconductor wafer 60 is laminated in (1) can be obtained.

그리고, 전술한 어느 방법에 있어서도, 접착층[접착층(20) 및 접착층(30)]과 다이 본딩 필름(40)은, 다이 본딩 필름(40)의 외주 부분(40a) 중 적어도 일부가 접착층(30)과 접하도록 적층되며, 바람직하게는 중첩되도록 적층된다. 또한, 반도체 웨이퍼(60)는, 접착층(30)이나 다이 본딩 필름(40)의 외주 부분(40a)과 중첩되지 않도록 배치된다.In any of the above-described methods, the adhesive layer (adhesive layer 20 and adhesive layer 30) and the die bonding film 40 have at least a portion of the outer circumferential portion 40a of the die bonding film 40 in the adhesive layer 30. It is laminated so as to contact with, and preferably so as to overlap. In addition, the semiconductor wafer 60 is arrange | positioned so that it may not overlap with the outer peripheral part 40a of the contact bonding layer 30 and the die bonding film 40. FIG.

전술한 어느 하나의 방법에 의해 반도체 웨이퍼(60)가 반도체 장치 제조용 접착 시트(1)에 적층된 적층체를 얻은 후에, 반도체 장치 제조용 접착 시트(1)의 접착층(30) 상에 링 프레임(50)이 배치된다.After obtaining the laminate in which the semiconductor wafer 60 was laminated | stacked on the adhesive sheet 1 for semiconductor device manufacture by any one of the methods mentioned above, the ring frame 50 is carried out on the adhesive layer 30 of the adhesive sheet 1 for semiconductor device manufacture. ) Is placed.

다음으로, 도 4에 나타낸 바와 같이, 상기 적층체를 절단 장치(다이서)의 회전 날(70)로 절단하여, 다이 본딩 필름(45)이 반도체칩(65)에 접착되어 이루어지는, 원하는 크기의 접착 필름이 부착된 반도체칩(80)을 얻는다. 다이싱 공정에서는, 접착 필름을 완전하게 절단하는 풀 컷 공법을 사용할 수도 있으며, 접착 필름을 완전히 절단하지 않고 일부를 남기는 공법(하프컷 공법)을 사용할 수도 있다.Next, as shown in FIG. 4, the said laminated body is cut | disconnected with the rotary blade 70 of a cutting device (dicer), and the die bonding film 45 is adhere | attached to the semiconductor chip 65 of the desired size. The semiconductor chip 80 with an adhesive film is obtained. In the dicing process, the full cut method which cuts an adhesive film completely can also be used, and the method (half cut method) which leaves a part without cutting an adhesive film completely can also be used.

반도체 웨이퍼(60)를 절단할 때 사용하는 다이서나 회전 날(블레이드)은, 일반적으로 시판되고 있는 것을 사용할 수 있다. 다이서로서는, 예를 들면, 가부시키가이샤 디스코사에서 제조한 풀오토매틱다이싱소 6000 시리즈나 세미오토매틱다이싱소 3000 시리즈 등을 사용할 수 있다. 블레이드로서는, 예를 들면, 가부시키가이샤 디스코사에서 제조한 다이싱 블레이드 NBC-ZH05 시리즈나 NBC-ZH 시리즈 등을 사용할 수 있다.As a dicer and a rotating blade (blade) used when cutting the semiconductor wafer 60, a commercially available one can be used. As a dicer, the full automatic dicing machine 6000 series, the semi-automatic dicing machine 3000 series, etc. which were manufactured by Disco Co., Ltd. can be used, for example. As a blade, the dicing blades NBC-ZH05 series, NBC-ZH series, etc. which were manufactured by Disco Co., Ltd. can be used, for example.

또한, 반도체 장치 제조용 접착 시트(1)와 반도체 웨이퍼(60)의 적층물을 절단하는 공정에 있어서, 예를 들면, 가부시키가이샤 디스코사에서 제조한 풀오토매틱다이싱소 6000 시리즈 등의 회전 날뿐만 아니라, 예를 들면, 가부시키가이샤 디스코사에서 제조한 풀오토매틱레이저소 7000 시리즈 등의 레이저를 사용할 수도 있다.In addition, in the process of cutting the laminated body of the adhesive sheet 1 for semiconductor device manufacture, and the semiconductor wafer 60, not only rotary blades, such as the full automatic dicing machine 6000 series manufactured by Disco, Inc., for example For example, lasers, such as the full automatic laser small 7000 series manufactured by Disco Co., Ltd., can also be used.

다이싱 공정 후에, 도 5에 나타낸 바와 같이, 접착층(20)과 다이 본딩 필름(45)의 계면에서 박리되며, 접착 필름이 부착된 반도체칩(80)이 픽업된다. 그리고, 픽업된, 접착 필름이 부착된 반도체칩(80)은, 도 6에 나타낸 바와 같이, 지지 기재(85)에 마운팅된다.After a dicing process, as shown in FIG. 5, it peels at the interface of the adhesive layer 20 and the die bonding film 45, and the semiconductor chip 80 with an adhesive film is picked up. And the semiconductor chip 80 with the adhesive film with which it picked up is mounted to the support base material 85 as shown in FIG.

그 후, 접착 필름이 부착된 반도체칩(80)의 반도체칩(65)은, 와이어(90)를 통하여 지지 기재(85) 상의 외부 접속 단자(도시하지 않음)와 접속된다. 그리고, 반도체칩(65)을 포함하는 적층체를 봉지(封止) 수지층(95)에 의해 봉지하여, 도 6에 나타내는 반도체 장치(100)를 얻을 수 있다.Thereafter, the semiconductor chip 65 of the semiconductor chip 80 with the adhesive film is connected to an external connection terminal (not shown) on the supporting base 85 through the wire 90. And the laminated body containing the semiconductor chip 65 is sealed by the sealing resin layer 95, and the semiconductor device 100 shown in FIG. 6 can be obtained.

그리고, 본 발명은 상기 실시형태로 한정되는 것은 아니다. 예를 들면, 접착층(30)은, 원환형으로 한정되지 않고, 직사각형 환형일 수도 있다. 이 경우에, 통상, 직사각형 환형을 가지는 링 프레임이 사용되고, 직사각형 다이 본딩 필름이 사용된다. 또한, 접착층(30)은, 접착층(20) 상에 복수 배치되어 있는 것으로 한정되지 않으며, 반도체 장치(100)의 제조 개수에 따라 접착층(20) 상에 1개 이상 배치되어 있으면 된다.In addition, this invention is not limited to the said embodiment. For example, the adhesive layer 30 is not limited to an annular shape, but may be a rectangular annular shape. In this case, usually, a ring frame having a rectangular annular shape is used, and a rectangular die bonding film is used. In addition, the contact bonding layer 30 is not limited to being arrange | positioned on the contact bonding layer 20 in multiple numbers, According to the manufacture number of the semiconductor device 100, 1 or more may be arrange | positioned at the bonding layer 20. FIG.

[실시예 1]Example 1

이하에서, 본 발명을 실시예에 따라 상세하게 설명하지만, 본 발명은 이들 실시예에 의해 제한되지 않는다.In the following, the present invention will be described in detail with reference to Examples, but the present invention is not limited to these Examples.

1. 다이 본딩 필름의 제조1. Manufacturing of die bonding film

온도계, 교반기 및 염화 칼슘관을 구비한 500ml의 4구 플라스크에, 에테르디아민 2000(BASF사 제조)(0.02몰), 1,12-디아미노도데칸(0.08몰) 및 N-메틸-2-피롤리돈 150g을 가하고, 60℃에서 교반하여, 디아민을 용해시켰다. 디아민 용해 후, 2,2-비스[4-(3,4-디카르복시페녹시)페닐]프로판 2무수물(0.1몰)을 소량씩 첨가했다. 60℃에서 1시간 반응시킨 후, N2 가스를 불어넣으면서 170℃에서 가열하여, 용제의 일부와 물을 공비(共沸) 제거하였다. 이 반응액을 폴리이미드 수지의 NMP 용액으로서 얻었다.In a 500 ml four-necked flask equipped with a thermometer, a stirrer and a calcium chloride tube, etherdiamine 2000 (made by BASF) (0.02 mol), 1,12-diaminododecane (0.08 mol) and N-methyl-2-pi 150 g of ralidone was added and stirred at 60 ° C to dissolve the diamine. After diamine dissolution, 2,2-bis [4- (3,4-dicarboxyphenoxy) phenyl] propane dianhydride (0.1 mol) was added in small portions. After 1 h at 60 ℃, and while blowing N 2 gas heated at 170 ℃, to remove some of the water of the azeotropic solvent (共沸). This reaction solution was obtained as an NMP solution of polyimide resin.

전술한 바와 같이 하여 얻은 폴리이미드 수지의 NMP 용액(폴리이미드 수지를 100질량부 포함함)에, 크레졸 노볼락형 에폭시 수지(도토화성 제조) 4질량부, 4,4'-[1-[4-[1-(4-하이드록시페닐)-1-메틸에틸]페닐]에틸리덴]비스페놀(혼슈화학 제조) 2질량부, 및 테트라페닐포스포늄테트라페닐보레이트(도쿄화성 제조) 0.5질량부를 가하였다. 또한, 질화 붕소 필러(미즈시마합금철 제조)를 고형분 전체 질량에 대하여 25질량%가 되도록, 에어로질 필러 R972(일본에어로질 제조)를 고형분 전체 질량에 대하여 3질량%가 되도록 각각 더하고, 잘 혼련하여 바니스를 얻었다. 조제된 바니스를 박리 처리된 폴리에틸렌테레프탈레이트 필름 상에 도포하고, 80℃에서 30분 가열하고, 이어서 120℃에서 30분 가열하였다. 그 후, 실온(25℃)에서 폴리에틸렌테레프탈레이트 필름을 박리하여, 두께 25㎛의 접착 필름을 다이 본딩 필름으로서 얻었다.4 mass parts of cresol novolak-type epoxy resins (made by the earthenability), and 4,4 '-[1- [4 in the NMP solution (100 mass parts of polyimide resins) of the polyimide resin obtained by making it above. 2 parts by mass of-[1- (4-hydroxyphenyl) -1-methylethyl] phenyl] ethylidene] bisphenol (manufactured by Honshu Chemical Co., Ltd.) and 0.5 parts by mass of tetraphenylphosphonium tetraphenylborate (manufactured by Tokyo Chemical) were added. . In addition, aerosol filler R972 (manufactured by Nippon Aerosol) was added to 3% by mass with respect to the total mass of solids, and kneaded well so that the boron nitride filler (manufactured by Mizushima alloy iron) was 25% by mass with respect to the total mass of solids. Got varnish. The prepared varnish was applied onto the peeled polyethylene terephthalate film, heated at 80 ° C. for 30 minutes, and then heated at 120 ° C. for 30 minutes. Then, the polyethylene terephthalate film was peeled off at room temperature (25 degreeC), and the adhesive film with a thickness of 25 micrometers was obtained as a die bonding film.

2. 다이싱 테이프의 제조2. Preparation of Dicing Tape

(1) 강접착층(1) Strong adhesive layer

주모노머로서 부틸아크릴레이트와 에틸아크릴레이트, 아크릴로니트릴을 사용하고, 관능기 모노머로서 하이드록시에틸아크릴레이트를 사용한 아크릴 공중합체를 용액 중합법에 의해 접착제로서 얻었다. 이와 같이 합성된 아크릴 공중합체의 중량 평균 분자량은 70만이며, 유리 전이점은 -30℃였다. 이 아크릴 공중합체 100질량부에 대하여, 다관능 이소시아네이트 가교제(일본 폴리우레탄 공업 가부시키가이샤 제조)를 2.2질량부 배합한 접착제 용액을 조제했다. 실리콘계 이형제를 도포한 2축 연신 폴리에스테르 필름 세퍼레이터(두께 25㎛) 상에 건조 시의 접착제 두께가 20㎛로 되도록 접착제 용액을 도포했다. 이어서, 접착제 용액을 80℃에서 30분 건조시킨 후, 실리콘계 이형제를 도포한 다른 2축 연신 폴리에스테르 필름 세퍼레이터(두께 25㎛)를 접착제 면에 라미네이팅했다.Butyl acrylate, ethyl acrylate, and acrylonitrile were used as a main monomer, and the acrylic copolymer using hydroxyethyl acrylate as a functional group monomer was obtained as an adhesive by the solution polymerization method. The weight average molecular weight of the acrylic copolymer thus synthesized was 700,000, and the glass transition point was -30 ° C. The adhesive solution which mix | blended 2.2 mass parts of polyfunctional isocyanate crosslinking agents (made by Japan Polyurethane Industry Co., Ltd.) with respect to 100 mass parts of this acrylic copolymers was prepared. The adhesive agent solution was apply | coated so that the adhesive thickness at the time of drying might be set to 20 micrometers on the biaxially stretched polyester film separator (thickness 25 micrometers) which apply | coated the silicone type mold release agent. Subsequently, after 30 minutes of drying the adhesive solution at 80 degreeC, the other biaxially-stretched polyester film separator (thickness 25micrometer) which apply | coated the silicone type mold release agent was laminated on the adhesive surface.

(2) 약접착층과 기재의 적층품(2) Laminated product of weak adhesive layer and base material

주모노머로서 2-에틸헥실아크릴레이트와 메틸메타크릴레이트를 사용하고, 관능기 모노머로서 하이드록시에틸메타크릴레이트와 아크릴산을 사용한 아크릴 공중합체를 용액 중합법에 의해 접착제로서 얻었다. 이와 같이 합성된 아크릴 공중합체의 중량 평균 분자량은 40만이며, 유리 전이점은 -38℃였다. 이 아크릴 공중합체 100질량부에 대하여, 다관능 이소시아네이트 가교제(미쓰비시 화학 가부시키가이샤 제조)를 15질량부 배합한 접착제 용액을 조제했다. 실리콘계 이형제를 도포한 2축 연신 폴리에스테르 필름 세퍼레이터(두께 38㎛) 상에 건조 시의 접착제 두께가 10㎛로 되도록 접착제 용액을 도포했다. 이어서, 접착제 용액을 80℃에서 30분 건조시킨 후, 폴리올레핀 필름(두께 100㎛)을 접착제 면에 라미네이팅했다. 이 다층 필름을 실온에서 1주일 동안 방치하여 충분히 숙성시킨 후, 시험에 사용하였다.2-ethylhexyl acrylate and methyl methacrylate were used as a main monomer, and the acrylic copolymer using hydroxyethyl methacrylate and acrylic acid as a functional group monomer was obtained as an adhesive agent by the solution polymerization method. The weight average molecular weight of the acrylic copolymer thus synthesized was 400,000, and the glass transition point was -38 ° C. The adhesive solution which mix | blended 15 mass parts of polyfunctional isocyanate crosslinking agents (made by Mitsubishi Chemical Corporation) with respect to 100 mass parts of this acrylic copolymers was prepared. The adhesive solution was apply | coated so that the adhesive thickness at the time of drying might be set to 10 micrometers on the biaxially stretched polyester film separator (38 micrometers in thickness) which apply | coated the silicone type mold release agent. Subsequently, after 30 minutes of drying the adhesive solution at 80 degreeC, the polyolefin film (100 micrometers in thickness) was laminated on the adhesive surface. This multilayer film was left at room temperature for 1 week to fully mature and then used for testing.

(3) 강접착층과 기재의 적층품(3) Laminated product of strong adhesive layer and base material

주모노머로서 부틸아크릴레이트와 에틸아크릴레이트, 아크릴로니트릴을 사용하고, 관능기 모노머로서 하이드록시에틸아크릴레이트를 사용한 아크릴 공중합체를 용액 중합법에 의해 접착제로서 얻었다. 이와 같이 합성된 아크릴 공중합체의 중량 평균 분자량은 70만이며, 유리 전이점은 -30℃였다. 이 아크릴 공중합체 100질량부에 대하여, 다관능 이소시아네이트 가교제(일본 폴리우레탄 공업 가부시키가이샤 제조)를 2.2질량부 배합한 접착제 용액을 조제했다. 실리콘계 이형제를 도포한 2축 연신 폴리에스테르 필름 세퍼레이터(두께 25㎛) 상에 건조 시의 접착제 두께가 20㎛로 되도록 접착제 용액을 도포했다. 이어서, 접착제 용액을 80℃에서 30분 건조시킨 후, 폴리올레핀 필름(두께 100㎛)을 접착제 면에 라미네이팅했다. 이 다층 필름을 실온에서 1주일 동안 방치하여 충분히 숙성시킨 후, 시험에 사용하였다.Butyl acrylate, ethyl acrylate, and acrylonitrile were used as a main monomer, and the acrylic copolymer using hydroxyethyl acrylate as a functional group monomer was obtained as an adhesive by the solution polymerization method. The weight average molecular weight of the acrylic copolymer thus synthesized was 700,000, and the glass transition point was -30 ° C. The adhesive solution which mix | blended 2.2 mass parts of polyfunctional isocyanate crosslinking agents (made by Japan Polyurethane Industry Co., Ltd.) with respect to 100 mass parts of this acrylic copolymers was prepared. The adhesive agent solution was apply | coated so that the adhesive thickness at the time of drying might be set to 20 micrometers on the biaxially stretched polyester film separator (thickness 25 micrometers) which apply | coated the silicone type mold release agent. Subsequently, after 30 minutes of drying the adhesive solution at 80 degreeC, the polyolefin film (100 micrometers in thickness) was laminated on the adhesive surface. This multilayer film was left at room temperature for 1 week to fully mature and then used for testing.

3. 반도체 웨이퍼 적층품의 제조3. Fabrication of Semiconductor Wafer Laminates

(실시예 1)(Example 1)

약접착층과 기재의 적층품(다이싱 테이프)의 약접착층 상에, 내경 210mm의 원환형으로 잘라낸 상기 (1)의 강접착층을 링 프레임 고정용 접착층으로서 부착하였다. 그 후, 직경 220mm로 원형 가공한 다이 본딩 필름을 강접착층과 동심을 이루도록 부착하여, 반도체 장치 제조용 접착 시트로 하였다. 직경 8인치, 두께 50㎛의 반도체 웨이퍼를 60℃의 열판 상에서 반도체 장치 제조용 접착 시트의 다이 본딩 필름과 접합하여, 반도체 웨이퍼 적층품을 얻었다.On the weak adhesive layer of the laminated product (dicing tape) of the weak adhesive layer and the base material, the strong adhesive layer of said (1) cut out in the annular shape of inner diameter 210mm was stuck as the adhesive bond layer for ring frame fixing. Then, the die bonding film circular-processed to diameter 220mm was attached so that it might become concentric with a strong adhesive layer, and it was set as the adhesive sheet for semiconductor device manufacture. The semiconductor wafer of 8 inches in diameter and 50 micrometers in thickness was bonded together with the die-bonding film of the adhesive sheet for semiconductor device manufacture on a 60 degreeC hotplate, and the semiconductor wafer laminated product was obtained.

(비교예 1)(Comparative Example 1)

강접착층을 적층하지 않은 점 이외는 실시예 1과 동일한 방법으로, 반도체 웨이퍼 적층품을 얻었다.A semiconductor wafer laminated product was obtained in the same manner as in Example 1 except that the strongly adhesive layer was not laminated.

(비교예 2)(Comparative Example 2)

약접착층과 기재의 적층품 대신 강접착층과 기재의 적층품(다이싱 테이프)을 사용하였고, 또한 강접착층을 적층하지 않은 점 이외는 실시예 1과 동일한 방법으로, 반도체 웨이퍼 적층품을 얻었다.A semiconductor wafer laminated product was obtained in the same manner as in Example 1 except that a strongly adhesive layer and a laminate (base tape) were used instead of the weakly bonded layer and the laminate.

(비교예 3)(Comparative Example 3)

다이 본딩 필름을 직경 205mm로 원형 가공하고, 다이 본딩 필름과 강접착층의 중첩 부분을 설치하지 않은 점 이외는 실시예 1과 동일한 방법으로, 반도체 웨이퍼 적층품을 얻었다.A semiconductor wafer laminated product was obtained in the same manner as in Example 1 except that the die bonding film was circularly processed to a diameter of 205 mm and the overlapping portion of the die bonding film and the strongly adhesive layer was not provided.

(비교예 4)(Comparative Example 4)

약접착층과 기재의 적층품 대신 강접착층과 기재의 적층품(다이싱 테이프)을 사용하였고, 또한 다이 본딩 필름을 직경 205mm로 원형 가공하고, 다이 본딩 필름과 강접착층의 중첩 부분을 설치하지 않은 점 이외는 실시예 1과 동일한 방법으로, 반도체 웨이퍼 적층품을 얻었다.In place of the laminate of the weak adhesive layer and the substrate, a laminate of the strongly adhesive layer and the substrate (dicing tape) was used, and the die bonding film was circularly processed to a diameter of 205 mm, and the overlapping portion of the die bonding film and the steel adhesive layer was not provided. A semiconductor wafer laminated product was obtained in the same manner as in Example 1 except for the above.

상기 실시예 1 및 비교예 1∼4에서 제조한 샘플에 있어서, 반도체 웨이퍼의 접합은, 가부시키가이샤 JCM사에서 제조한 「DM-300-H」를 사용하여 60℃에서 행하였다.In the samples produced in Examples 1 and Comparative Examples 1 to 4, the bonding of the semiconductor wafers was performed at 60 ° C using "DM-300-H" manufactured by JCM.

4. 각종 평가4. Various evaluation

(다이싱 공정)Dicing Process

가부시키가이샤 디스코사에서 제조한 풀오토다이서 「DFD-6361」을 사용하여, 상기 실시예 1 및 비교예 1∼4에서 제조한 샘플을 절단하였다. 샘플의 절단에는, 직경 250mm의 개구를 가지는 원환형 링 프레임을 사용하였다. 샘플의 절단에는, 블레이드 1장으로 가공이 완료되는 싱글 컷 방식을 채용하였고, 가부시키가이샤 디스코사에서 제조한 다이싱 블레이드 「NBC-ZH104F-SE 27HDBB」를 블레이드로서 사용하였다. 샘플의 절단은, 블레이드 회전수 45,000rpm, 절단 속도 50mm/s의 조건에서 행하였다. 절단 시의 블레이드 높이는, 다이싱 기재를 20㎛만큼 절입하록 80㎛로 설정하였다. 반도체 웨이퍼를 절단하는 사이즈는 10mm×10mm로 하였다.The samples prepared in Example 1 and Comparative Examples 1 to 4 were cut using a full autodizer "DFD-6361" manufactured by Disco Co., Ltd. For cutting the sample, an annular ring frame having an opening of 250 mm in diameter was used. The cutting of the sample employ | adopted the single-cut system which complete | finishes with one blade, and used the dicing blade "NBC-ZH104F-SE 27HDBB" manufactured by Disco Co., Ltd. as a blade. The sample was cut under conditions of a blade rotational speed of 45,000 rpm and a cutting speed of 50 mm / s. The blade height at the time of cutting | disconnection was set to 80 micrometers so that a dicing base material may be cut in 20 micrometers. The size which cuts a semiconductor wafer was 10 mm x 10 mm.

다이싱 공정에 있어서 링 프레임과 접착층 사이가 박리된 경우, 또는 다이싱 공정에 있어서 다이 본딩 필름의 박리나 반도체칩 비산이 발생한 경우를 각각 불량(B)으로 판정하였고, 전술한 문제가 발생하지 않은 것을 양호(A)로 판정하였다.Defects between the ring frame and the adhesive layer in the dicing step, or peeling of the die bonding film and scattering of the semiconductor chip in the dicing step were determined as defectives (B), respectively. Was determined to be good (A).

(픽업 공정)(Pick-up process)

전술한 방법으로 개편화한 칩의 픽업성에 대하여, 르네사스 동일본 세미콘덕터사에서 제조한 플렉시블 다이 본더 「DB-730」을 사용하여 평가했다. 픽업용 콜릿으로서, 마이크로메카닉스사에서 제조한 「RUBBER TIP 13-087E-33(사이즈: 10mm×10mm」을 사용하였고, 이젝터 핀(ejector pin)으로서, 마이크로메카닉스사에서 제조한 「EJECTOR NEEDLE SEN2-83-05(직경: 0.7mm, 선단 형상: 직경 350㎛의 반원)」를 사용하였다. 이젝터 핀은, 핀 중심 간격 4.2mm로 9개 배치하였다. 픽업 시의 핀의 밀어올림 속도: 10mm/s, 밀어올림 높이: 1000㎛의 조건에서 픽업성을 평가했다. 연속적으로 100개의 칩을 픽업하여, 칩 균열, 픽업 미스 등이 발생하지 않은 경우를 양호(A)로 판정하였고, 1개의 칩이라도 칩의 균열이나 픽업 미스 등이 발생한 경우를 불량(B)으로 판정하였다.The pick-up property of the chip separated into pieces by the above-described method was evaluated using a flexible die bonder "DB-730" manufactured by Renesas East Japan Semiconductor. As a pickup collet, "RUBBER TIP 13-087E-33 (size: 10 mm x 10 mm") manufactured by Micromechanics Co., Ltd. was used, and "EJECTOR NEEDLE SEN2-83" manufactured by Micromechanics Co., Ltd. as an ejector pin. -05 (diameter: 0.7 mm, tip shape: semi-circle of 350 µm in diameter). Nine ejector pins were arranged at a pin center spacing of 4.2 mm. Pushup speed of the pin during pickup: 10 mm / s, Push-up height: The pick-up property was evaluated on conditions of 1000 micrometers The case where 100 chips were picked up continuously and a chip crack, pick-up miss, etc. did not generate | occur | produced was judged as good (A), The case where a crack, a pickup miss, etc. generate | occur | produced was judged as defect (B).

상기 실시예 1 및 비교예 1∼4에서 제조한 샘플, 및 다이싱 공정 및 픽업 공정에서의 각종 평가 결과를 표 1에 나타내었다.Table 1 shows the samples prepared in Example 1 and Comparative Examples 1 to 4, and various evaluation results in the dicing step and the pick-up step.

[표 1][Table 1]

Figure pct00001
Figure pct00001

비교예 1∼4에서는 다이 본딩 필름과 링 프레임 고정용 강접착층의 접촉 부분이나 중첩 부분이 없다.In Comparative Examples 1-4, there is no contact portion or overlapping portion between the die bonding film and the steel adhesive layer for fixing the ring frame.

비교예 1은, 접착층의 링 프레임 배치 부분과 링 프레임과의 밀착력이 약하고, 다이싱 공정에 있어서 링 프레임으로부터 접착층이 박리되며, 또한 다이싱 공정에 있어서 다이 본딩 필름 박리가 발생하므로 바람직하지 않다. 비교예 2는, 다이싱 테이프와 다이 본딩 필름의 밀착력이 높아, 픽업 공정에 있어서 칩 균열이나 픽업 미스가 발생하므로 바람직하지 않다. 비교예 3은, 강접착층과 다이 본딩 필름의 접촉 부분이나 중첩 부분이 없기 때문에, 다이싱 공정에 있어서 다이 본딩 필름 박리가 발생하므로 바람직하지 않다. 비교예 4는, 다이싱 테이프와 다이 본딩 필름의 밀착력이 높아, 픽업 공정에 있어서 칩 균열이나 픽업 미스가 발생하므로 바람직하지 않다.In Comparative Example 1, the adhesion between the ring frame arrangement portion of the adhesive layer and the ring frame is weak, the adhesive layer is peeled from the ring frame in the dicing step, and die bonding film peeling occurs in the dicing step, which is not preferable. Comparative example 2 is not preferable because the adhesion between the dicing tape and the die bonding film is high, and chip cracks and pickup misses occur in the pickup process. Since there is no contact part or overlapping part of a strong adhesive layer and a die bonding film, the comparative example 3 is unpreferable since die bonding film peeling occurs in a dicing process. Comparative Example 4 is not preferable because the adhesion between the dicing tape and the die bonding film is high, and chip cracking and pick-up miss occur in the pick-up step.

이상의 결과로부터, 반도체 장치를 제조할 때, 본 발명의 반도체 장치 제조용 접착 시트를 사용함으로써, 픽업 공정에서의 다이 본딩 필름과 다이싱 시트 사이의 박리 용이성을 유지하면서, 다이싱 공정에서의 링 프레임의 박리 및 칩의 비산을 억제할 수 있는 것이 확인되었다. 본 발명에서는, 다이 본딩 필름이 부착된 반도체칩을 용이하게 픽업 가능하므로, 반도체 장치의 수율을 향상시킬 수 있다.From the above result, when manufacturing a semiconductor device, by using the adhesive sheet for semiconductor device manufacture of this invention, while maintaining the peelability between the die bonding film and a dicing sheet in a pick-up process, It was confirmed that peeling and scattering of a chip | tip can be suppressed. In this invention, since the semiconductor chip with a die bonding film can be picked up easily, the yield of a semiconductor device can be improved.

그런데, 전술한 반도체 장치 제조용 접착 시트(1)는, 픽업 공정에서의 다이 본딩 필름과 다이싱 시트 사이의 박리 용이성 유지, 및 다이싱 공정에서의 링 프레임의 박리 및 칩의 비산의 억제와 같은 효과 외에, 롤형으로 권취하였을 때의 다이 본딩 필름의 권취흔의 문제의 해결에도 기여한다. 이하에서, 이 점에 대하여 설명한다.By the way, the adhesive sheet 1 for semiconductor device manufacture mentioned above has effects, such as maintaining peelability between the die-bonding film and a dicing sheet in a pick-up process, and suppressing peeling of a ring frame and scattering of a chip in a dicing process. In addition, it contributes to the solution of the problem of the winding trace of the die bonding film at the time of winding up in roll shape. This point will be described below.

종래, 프리 컷 가공이 행해진 접착 시트(200)는, 예를 들면, 도 7에 나타낸 바와 같이, 기재 필름(201) 상에 원형의 다이 본딩 필름(202)이 적층되고, 또한 다이 본딩 필름(202)을 덮도록 원형의 점착층(203)이 적층되어 있다.Conventionally, as for the adhesive sheet 200 to which the precut process was performed, circular die bonding film 202 is laminated | stacked on the base film 201 as shown in FIG. 7, and the die bonding film 202 is carried out, for example. ), A circular adhesive layer 203 is laminated.

이와 같은 접착 시트(200)를, 예를 들면, 도 8에 나타낸 바와 같이, 원통형의 권심(卷芯)(211)에 권취하여 롤형으로 하는 경우, 다이 본딩 필름(202)과 점착층(203)의 중첩 부분의 두께가 접착 시트(200)의 다른 부분의 두께보다 두꺼우므로, 권취 시의 장력이 다이 본딩 필름(202)에 과잉으로 인가되는 경우가 있다. 그러므로, 도 9에 나타낸 바와 같이, 다이 본딩 필름(202)의 중앙 부분에 권취흔(212)이 전사되어 다이 본딩 필름(202)의 평활성이 손상되는 경우가 있다. 권취흔(212)은, 다이 본딩 필름(202)의 두께가 증가할수록 생기기 쉬우며, 권취흔(212)이 생기면, 접착 시트(200)를 반도체 웨이퍼에 부착했을 때 반도체 웨이퍼와 다이 본딩 필름(202) 사이에 공기가 들어가서, 반도체 장치의 제조 시에 문제가 생길 우려가 있다.For example, as shown in FIG. 8, when such an adhesive sheet 200 is wound in a cylindrical core 211 to form a roll, the die bonding film 202 and the adhesive layer 203 are formed. Since the thickness of the overlapping portion of the film is thicker than the thickness of the other portion of the adhesive sheet 200, the tension at the time of winding may be excessively applied to the die bonding film 202. Therefore, as shown in FIG. 9, the winding trace 212 may be transferred to the center part of the die bonding film 202, and the smoothness of the die bonding film 202 may be impaired. The winding trace 212 is more likely to occur as the thickness of the die bonding film 202 increases, and when the winding trace 212 occurs, the semiconductor wafer and the die bonding film 202 are attached when the adhesive sheet 200 is attached to the semiconductor wafer. There is a fear that air enters between the and), which may cause a problem in manufacturing the semiconductor device.

그리고, 종래의 접착 시트로서는, 도 10에 나타낸 바와 같이, 프리 컷 가공된 다이 본딩 필름(302) 및 점착 필름(303)의 외측에도 점착 필름(303)이 형성된 접착 시트(300)도 있지만, 롤형으로 권취했을 때의 권취흔의 문제는 접착 시트(200)와 마찬가지로 발생할 수 있다.And as a conventional adhesive sheet, although the adhesive sheet 300 in which the adhesion film 303 was formed also in the outer side of the die-bonding film 302 and the adhesion film 303 pre-cut-processed as shown in FIG. The problem of the winding traces when wound in the same manner may occur as in the adhesive sheet 200.

이에 비해, 전술한 접착 시트(1)에서는, 도 2에 나타낸 바와 같이, 다이 본딩 필름(40)의 외주 부분(40a) 중 적어도 일부가 접착층(30)과 중첩되어 있어, 외주 부분(40a)에 대응하는 접착 시트(1)의 두께가, 중앙 부분(40b)에 대응하는 접착 시트(1)의 두께에 비해 두껍게 되어 있다. 이에 따라, 접착 시트(1)를 롤형으로 권취하였을 때, 다이 본딩 필름(40)과 접착층(30)의 중첩 부분이 보호되어, 다이 본딩 필름의 중앙 부분(40b)에 인가되는 권취 시의 장력이 완화되어, 다이 본딩 필름(40)에 권취흔이 전사되는 것을 억제할 수 있다.On the other hand, in the above-mentioned adhesive sheet 1, as shown in FIG. 2, at least one part of the outer peripheral part 40a of the die bonding film 40 overlaps with the adhesive layer 30, and is attached to the outer peripheral part 40a. The thickness of the corresponding adhesive sheet 1 becomes thick compared with the thickness of the adhesive sheet 1 corresponding to the center part 40b. As a result, when the adhesive sheet 1 is wound in a roll shape, the overlapping portion of the die bonding film 40 and the adhesive layer 30 is protected, and the tension at the time of winding applied to the center portion 40b of the die bonding film is reduced. It can be alleviated and can suppress that the wound trace is transferred to the die bonding film 40.

또한, 권취흔의 전사를 억제하는 관점에서 설명하면, 도 11에 나타내는 접착 시트(2)와 같이, 접착층(30)의 내주 중 적어도 일부가, 다이 본딩 필름(40)과 중첩되어 있어도 된다. 이 경우에도, 외주 부분(40a)에 대응하는 접착 시트(2)의 두께가, 중앙 부분(40b)에 대응하는 접착 시트(2)의 두께에 비해 두껍게 되어 있다. 따라서, 접착 시트(1)와 마찬가지로, 다이 본딩 필름(40)에 권취흔이 전사되는 것을 억제할 수 있다.In addition, when it demonstrates from the viewpoint of suppressing transfer of a winding trace, like the adhesive sheet 2 shown in FIG. 11, at least one part of the inner periphery of the adhesive layer 30 may overlap with the die bonding film 40. FIG. Also in this case, the thickness of the adhesive sheet 2 corresponding to the outer peripheral part 40a becomes thick compared with the thickness of the adhesive sheet 2 corresponding to the center part 40b. Therefore, similar to the adhesive sheet 1, it can suppress that the wound trace is transferred to the die bonding film 40. FIG.

이하, 본 발명에 따른 접착 시트의 권취흔 전사 억제성의 평가 시험에 대하여 설명한다.EMBODIMENT OF THE INVENTION Hereinafter, the evaluation test of the wound trace transcription inhibitory property of the adhesive sheet which concerns on this invention is demonstrated.

(실시예 1)(Example 1)

약접착층과 기재의 적층품(다이싱 테이프)의 약접착층 상에, 내경 210mm의 원환형으로 70mm 간격으로 연속적으로 잘라낸 상기 (1)의 강접착층을 링 프레임 고정용 접착층으로서 부착하였다. 그 후, 직경 220mm로 원형 가공된 다이 본딩 필름을 강접착층과 동심을 이루도록 연속적으로 부착하였다. 그리고, 다이싱 테이프와 강접착층의 적층 부분에 대하여, 기재로의 절입 깊이가 10㎛ 이하가 되도록 조절하면서, 다이 본딩 필름과 동심원형으로 φ290mm의 원형 프리 컷 가공을 행하고, 기재의 폭 방향의 양 단부에 다이싱 테이프와 강접착층의 적층 부분이 남도록 가공하여, 반도체 장치 제조용 접착 시트를 얻었다.On the weak adhesive layer of the laminated product (dicing tape) of the weak adhesive layer and the base material, the strongly adhesive layer of said (1) cut out continuously at 70 mm intervals in an annular shape of 210 mm of inner diameter was attached as an adhesive layer for ring frame fixing. Thereafter, a die bonding film circularly processed to a diameter of 220 mm was continuously attached to be concentric with the strong adhesive layer. Then, the dicing tape with respect to the stacked portion of the steel bonding layer, while adjusting the cutting depth of the base material is less than or equal to 10㎛, performs a circular pre-cut processing of φ 290mm and a die-bonding film concentrically, the width direction of the base material It processed so that the laminated part of a dicing tape and a strong adhesive layer might remain in both ends, and the adhesive sheet for semiconductor device manufacture was obtained.

(실시예 2)(Example 2)

다이 본딩 필름의 직경을 211mm로 원형 가공한 점 이외는 실시예 1과 동일한 방법으로, 반도체 장치 제조용 접착 시트를 얻었다.An adhesive sheet for semiconductor device production was obtained in the same manner as in Example 1 except that the diameter of the die bonding film was circularly processed to 211 mm.

(비교예 1)(Comparative Example 1)

다이 본딩 필름의 직경을 205mm로 원형 가공한 점 이외는 실시예 1과 동일한 방법으로, 반도체 장치 제조용 접착 시트를 얻었다.The adhesive sheet for semiconductor device manufacture was obtained by the method similar to Example 1 except the point which circularly processed the diameter of the die bonding film to 205 mm.

(비교예 2)(Comparative Example 2)

약접착층과 기재의 적층품(다이싱 테이프)의 약접착층 상에, 직경 220mm로 원형 가공한 다이 본딩 필름을 60mm 간격으로 연속적으로 부착하였다. 그리고, 다이싱 테이프와 약접착층의 적층 부분에 대하여, 기재로의 절입 깊이가 10㎛ 이하가 되도록 조절하면서, 다이 본딩 필름과 동심원형으로 φ290mm의 원형 프리 컷 가공을 행하고, 기재의 폭 방향의 양 단부에 다이싱 테이프가 남도록 가공하여, 반도체 장치 제조용 접착 시트를 얻었다.On the weak adhesive layer of the laminated | multilayer product (dicing tape) of the weak adhesive layer and the base material, the die-bonding film circular-processed to diameter 220mm was continuously stuck by 60 mm space | interval. Then, the dicing tape with respect to the laminated portion of the drug adhesive layer, while adjusting the cutting depth of the base material is less than or equal to 10㎛, performs a circular pre-cut processing of φ 290mm and a die-bonding film concentrically, the width direction of the base material It processed so that dicing tape might remain in both ends, and the adhesive sheet for semiconductor device manufacture was obtained.

(비교예 3)(Comparative Example 3)

다이 본딩 필름의 두께를 60㎛로 한 점 이외는 비교예 2와 동일한 방법으로, 반도체 장치 제조용 접착 시트를 얻었다.The adhesive sheet for semiconductor device manufacture was obtained by the method similar to the comparative example 2 except the thickness of the die bonding film being 60 micrometers.

(시트 롤의 제조)(Manufacture of Sheet Rolls)

실시예 및 비교예에 따른 접착 시트를, 원형의 다이 본딩 필름 100장분의 길이로 롤형으로 권취하여, 시트 롤을 얻었다. 권취 장력은, 1kg 또는 3kg으로 하였다. 다음으로, 얻어진 시트 롤을 냉장고 내(5℃)에서 2주일 동안 보존하고, 그 후, 냉장고로부터 인출한 시트 롤 50장째의 다이 본딩 필름에 대하여, 권취흔의 유무를 관찰했다. 평가 기준은 이하와 같다.The adhesive sheet which concerns on an Example and a comparative example was wound up in roll shape by the length of 100 pieces of circular die bonding films, and the sheet roll was obtained. The winding tension was 1 kg or 3 kg. Next, the obtained sheet roll was preserve | saved for 2 weeks in the refrigerator (5 degreeC), and the presence or absence of the wound trace was observed about the die-bonding film of the 50th sheet roll taken out from the refrigerator after that. The evaluation criteria are as follows.

○: 모든 각도로부터 관찰해도 권취흔이 확인되지 않음(Circle): Winding trace was not confirmed even when observed from all angles.

△: 필름 상면으로부터 관찰하면 권취흔이 확인되지 않지만, 필름의 각도를 변경하여 관찰하면 권취흔이 확인됨(Triangle | delta): A winding trace is not confirmed when it observes from a film upper surface, but a winding trace is confirmed when changing and observing the angle of a film.

×: 필름 상면으로부터 관찰하면 권취흔이 확인됨X: Winding trace is confirmed when observed from the film upper surface.

평가 결과를 표 2에 나타낸다. 다이 본딩 필름의 외주와 접착층이 중첩되는 실시예 1, 2에서는, 권취 장력에 관계없이 권취흔은 확인되지 않았다. 한편, 다이 본딩 필름의 외주와 접착층이 중첩되지 않는 비교예 1∼3에서는 권취흔이 확인되었고, 권취 장력이 큰 경우에는 더욱 현저하게 권취흔이 발생하고 있는 것이 확인되었다. 또한, 실시예 및 비교예에 따른 접착 시트를 반도체 웨이퍼에 부착했을 때의 보이드(void)의 발생 유무를 육안관찰에 의해 평가했다. 그 결과, 보이드의 발생 정도는, 권취흔의 발생 정도에 따라 증가하는 것이 확인되었다.The evaluation results are shown in Table 2. In Examples 1 and 2 in which the outer circumference of the die bonding film and the adhesive layer overlap, the winding trace was not confirmed regardless of the winding tension. On the other hand, in the comparative examples 1 to 3 in which the outer periphery of the die bonding film and the adhesive layer do not overlap, the winding trace was confirmed, and when the winding tension was large, it was confirmed that the winding trace occurred more remarkably. In addition, visual observation evaluated the presence or absence of the void when the adhesive sheet which concerns on an Example and a comparative example was affixed on a semiconductor wafer. As a result, it was confirmed that the generation degree of voids increases with the generation degree of a wound trace.

[표 2][Table 2]

Figure pct00002
Figure pct00002

1, 2…반도체 장치 제조용 접착 시트 10…기재 필름
20…접착층(제1 접착층) 25…개구로부터 노출되는 부분
30…접착층(제2 접착층) 30a…개구
40, 45…다이 본딩 필름 50…링 프레임
60…반도체 웨이퍼 100…반도체 장치1, 2 ... . Adhesive sheet for semiconductor device manufacture 10. Base film
20... Adhesive layer (first adhesive layer) 25.. Part exposed from the opening
30 ... Adhesive layer (second adhesive layer) 30a... Opening
40, 45... Die bonding film 50... Ring frame
60 ... Semiconductor wafer 100... Semiconductor device

Claims (5)

기재(基材);
상기 기재 상에 배치된 제1 접착층;
상기 제1 접착층 상에 배치되고 또한 상기 제1 접착층이 노출되는 개구를 가지는 제2 접착층; 및
상기 제1 접착층에서의 상기 개구로부터 노출되는 부분에 배치된 다이 본딩 필름
을 구비하고,
상기 다이 본딩 필름의 외주(外周) 중 적어도 일부가, 상기 제2 접착층에 접하고 있는, 접착 시트.Base material;
A first adhesive layer disposed on the substrate;
A second adhesive layer disposed on the first adhesive layer and having an opening through which the first adhesive layer is exposed; And
A die bonding film disposed at a portion exposed from the opening in the first adhesive layer
And,
The adhesive sheet in which at least one part of the outer periphery of the said die bonding film is in contact with the said 2nd contact bonding layer. 제1항에 있어서,
상기 다이 본딩 필름의 외주 중 적어도 일부가, 상기 제2 접착층과 중첩되어 있는, 접착 시트.The method of claim 1,
The adhesive sheet in which at least one part of the outer periphery of the said die bonding film overlaps with the said 2nd contact bonding layer. 제1항에 있어서,
상기 제2 접착층의 내주(內周) 중 적어도 일부가, 상기 다이 본딩 필름과 중첩되어 있는, 접착 시트.The method of claim 1,
The adhesive sheet in which at least one part of the inner periphery of the said 2nd adhesive layer overlaps with the said die bonding film. 제2항 또는 제3항에 있어서,
상기 다이 본딩 필름과 상기 제2 접착층의 중첩 부분의 폭이 0.1∼25 mm인, 접착 시트.The method according to claim 2 or 3,
The adhesive sheet whose width | variety of the overlapping part of the said die bonding film and said 2nd contact bonding layer is 0.1-25 mm. 제1항 내지 제4항 중 어느 한 항에 있어서,
다이싱 가공 및 다이 본딩 가공에 사용되는 접착 시트.
5. The method according to any one of claims 1 to 4,
Adhesive sheet used for dicing and die bonding.
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