CN103305142B

CN103305142B - Splicing tape

Info

Publication number: CN103305142B
Application number: CN201310057951.8A
Authority: CN
Inventors: 青山真沙美; 丸山弘光
Original assignee: Furukawa Electric Co Ltd
Current assignee: Furukawa Electric Co Ltd
Priority date: 2012-03-07
Filing date: 2013-02-25
Publication date: 2016-01-20
Anticipated expiration: 2033-02-25
Also published as: KR20130102487A; KR101488587B1; CN103305142A

Abstract

The invention provides a kind of splicing tape that can prevent flying out at the circumference of workpiece generation chip.Splicing tape (1) possesses the bond layer (20) for pasting the wafer as workpiece and supports the base material film (10) of bond layer (20).The strong bonding region (21) corresponding with the circumference of wafer and the interior region (24) corresponding with the position forming chip from wafer is there is at bond layer (20), when being (A) when making the bonding force of strong bonding region (21) and making the bonding force of interior region (24) for (B), the bonding force in each region meets the condition of formula (1-1).（A）＞（B）...（1-1）。

Description

Splicing tape

Technical field

The present invention relates to splicing tape, particularly relate to the splicing tape being adapted at using in the cutting process of workpiece (machined object).

Background technology

For being formed with IC(unicircuit) etc. predetermined circuit pattern semiconductor wafer or utilize the semiconductor package part of resin cast IC, in the mode etc. making the cutter at high speeds being dispersed with metallics rotate, becoming predetermined chip size by rotating sword cutting process, then taking the various process such as cleaning or drying, expansion, pickup, chips welding further.In these operations, usually, utilize the splicing tape being attached to bond layer on base material film to fix and keep the workpiece such as wafer or packaged piece, and carrying out cutting or picking up, in patent documentation 1, disclosing an example of relevant splicing tape.

, in cutting action, with the thin cutter of per minute tens thousand of turns such high speed rotating, cutting workpiece is mobile, and, on one side tempestuously injection water while wash away cutting powder.Consequently, the problem (hereinafter referred to as " chip flies out ") that the chip part after cutting sometimes disperses.To this, in the splicing tape of such as patent documentation 2, chip is inhibit to fly out by the melting transition temperature adjusting bond layer.

Patent documentation 1: Japanese Laid-Open Patent Publication 60-196956 publication

Patent documentation 2: Japanese Unexamined Patent Publication 2001-123139 publication

, in recent years, along with the miniaturization of IC completed knocked down products, the propelling of slimming of electronics etc., also the slimming of chip is constantly being required further.When thinned chips, therefore, if adopt existing splicing tape to carry out cutting and picking up, then there is Die strength more weak than the bonding force of splicing tape and cause the situation of chip breakage in the weakened of chip.

So, although can bonding force be reduced, carry out the fixing of workpiece so that the damaged such bonding force of chip can not be caused and keep, but, in the circumference of workpiece, the bad chip less than desired chip size can be formed, its bond area (area contacted with splicing tape) is less, thus making the confining force of each bad chip more weak, consequent problem is, the generation that cannot fully prevent chip from flying out.

Summary of the invention

Therefore, main purpose of the present invention is to provide a kind of splicing tape, and it can prevent the chip of the circumference of workpiece from flying out when cut workpiece.

In order to solve above-mentioned problem, according to the 1st aspect of the present invention, provide a kind of splicing tape, the feature of described splicing tape is,

Described splicing tape possesses:

Bond layer, it is for pasting workpiece; With

Base material film, it is for supporting described bond layer,

There is the 1st region and the 2nd region at described bond layer, described 1st region is corresponding with the circumference of described workpiece, and described 2nd region is corresponding with the position forming chip from described workpiece,

When being (A) when making the bonding force in described 1st region and making the bonding force in described 2nd region for (B), the bonding force in each region meets the condition of formula (1-1).

（A）＞（B）…（1-1）

Described 1st region and described 2nd region " bonding force " separately refer to, when by adhesive tape applying in silicon mirror wafer with 50mm/min(mm/min) speed, the angle of 90 degree peels this splicing tape from wafer time bonding force.

As the 2nd aspect of the present invention, in described first method,

There is the 3rd region at described bond layer, described 3rd region is corresponding with the position being configured for the fixing part fixing this splicing tape,

When making the bonding force in described 3rd region for (C), the bonding force in each region meets the condition of formula (1-2).

（A）＞（C）≥（B）…（1-2）

Words so, are more preferably from the viewpoint of the pick improving chip.

As the 3rd aspect of the present invention, in described second method,

The transmittance in described 1st region is different from other region.

Words so are more preferably.Its reason is, because because the transmittance of described part 1 is different from other region, thus easily differentiated by optical pickocff, therefore, it is possible to utilize described 1st region as positioning datum when workpiece being pasted on splicing tape.Thereby, it is possible to easily by adhesive tape joining in workpiece, and can prevent the chip occurred in the circumference of workpiece from flying out, thus the splicing tape of excellence in the pick of chip can be obtained.

As the 4th aspect of the present invention, in described Third Way,

Described 1st region is formed dividually with other region.Words so, then become simple in the operation that bond layer arranges the 1st region.Thereby, it is possible to easily by adhesive tape joining in workpiece, and can prevent the chip occurred in the circumference of workpiece from flying out, thus the splicing tape of excellence in the pick of chip can be produced easily.

As the 5th aspect of the present invention, in described Third Way,

Described 1st region can be formed integratedly with other region.According to which, can easily by adhesive tape joining in workpiece, and can prevent the chip occurred in the circumference of workpiece from flying out, thus the splicing tape of excellence in the pick of chip can be obtained.

According to the 6th aspect of the present invention, provide a kind of splicing tape, the feature of described splicing tape is,

Described splicing tape possesses:

Binder layer, it is for pasting workpiece;

Bond layer, under it is formed at described binder layer; And

Base material film, it supports described binder layer and described bond layer,

There is the 1st region and the 2nd region at described bond layer, described 1st region is corresponding with the circumference of described workpiece across described binder layer, and described 2nd region is corresponding with the position forming chip from described workpiece,

When making described 1st region the bonding force of described binder layer is (D) and make described 2nd region to the bonding force of described binder layer for (E), the bonding force in each region meets the condition of formula (2-1).

（D）＞（E）…（2-1）

As the 7th aspect of the present invention, in described 6th mode,

When making the bonding force in described 3rd region for (C), the bonding force in each region meets the condition of formula (2-2).

（D）＞（C）≥（E）…（2-2）

Words so, are more preferably from the viewpoint of the pick improving chip.

As the 8th aspect of the present invention, in described 7th mode,

The transmittance in described 1st region is different from other region.Words so, be then more preferably.Its reason is, because because the transmittance of described part 1 is different from other region, thus easily differentiated by optical pickocff, therefore, it is possible to utilize described 1st region as positioning datum when workpiece being pasted on splicing tape.Thereby, it is possible to easily by adhesive tape joining in workpiece, and can prevent the chip occurred in the circumference of workpiece from flying out, thus the splicing tape of excellence in the pick of chip can be obtained.

As the 9th aspect of the present invention, in described eighth mode,

As the 10th aspect of the present invention, in described eighth mode,

According to the present invention, when cut workpiece, can prevent the chip occurred in the circumference of workpiece from flying out.

Accompanying drawing explanation

Fig. 1 is the schematic diagram of the Sketch that splicing tape is shown.

Fig. 2 is the vertical view of the example that the shape that strong bonding region can adopt is shown.

Fig. 3 is the schematic diagram of the Sketch that the splicing tape after performing precut processing is shown.

Fig. 4 is the sectional view of the X-X line along Fig. 1.

Fig. 5 is the sectional view of the Y-Y line along Fig. 2.

Fig. 6 is the figure of the manufacture method that semi-conductor chip is summarily shown.

Fig. 7 is the figure of the follow-up operation that Fig. 6 is summarily shown, is the vertical view that the state after utilizing annular frame fixed bonding band is summarily shown.

Fig. 8 is the sectional view of the Z-Z line along Fig. 7.

Fig. 9 is the figure of the follow-up operation that Fig. 7 is summarily shown.

Figure 10 is the figure of the follow-up operation that Fig. 9 is summarily shown.

Figure 11 is the figure of the variation of the splicing tape that Fig. 1 ~ Figure 10 is shown, is the figure corresponding to Fig. 8.

Figure 12 is the sectional view of the Sketch of the splicing tape that chips welding (diebonding) is shown.

Figure 13 is the figure of the variation of the splicing tape of the chips welding that Figure 12 is shown.

Label declaration

1: splicing tape;

1a: label portion;

1b: periphery;

10: base material film;

20: bond layer;

21: strong bonding region;

22: strong adhesive portion;

22a: inner edge portion;

22b: outer edge;

23: support;

24: interior region;

26: external region;

30: wafer;

30a: side edge part;

31: semiconductor package part;

32: surface;

34: the back side;

36: chip;

38: bad chip;

40: binder layer;

42: circumference;

44: central part;

50: supporting plate;

60: annular frame;

60a: inner edge portion;

70: upper teat part;

72: upper ejector pin;

74: absorption chuck;

100: binder layer;

100a: side edge part.

Embodiment

Below, with reference to accompanying drawing, the preferred embodiment of the present invention is described.

[the 1st embodiment]

As shown in Fig. 1 (a), Fig. 1 (b), splicing tape 1 is in strip, and the wound into rolls when keeping, sends from this scroll in use.

Splicing tape 1 is formed primarily of base material film 10 and bond layer 20.Splicing tape 1 has such structure: bond layer 20 is formed on base material film 10, and bond layer 20 is supported by base material film 10.

Base material film 10 is made up of plastics, rubber etc., and when bond layer 20 comprises ray polymerization composition, base material film 10 is preferably formed with the material that the transmissivity of ray is good.

As the example of polymkeric substance of constituent material that can be chosen as base material film 10, polyethylene can be listed, polypropylene, ethylene-propylene copolymer, poly-1-butylene, poly-4-methyl-1-pentene, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, ethylene-methyl acrylate copolymer, ethylene-acrylic acid copolymer, the homopolymer of the alpha-olefins such as ionomer or multipolymer or their mixture, polyethylene terephthalate, polycarbonate, the engineering plastics such as polymethylmethacrylate, urethane, styrene-ethylene-butadiene or amylene based copolymer, the thermoplastic elastomers such as polymeric amide-polyol copolymer.

Base material film 10 can be by the base material film of the two or more material mixing selected from these groups, also can be the base material film making their single or multiple lifts.

The thickness of base material film 10 is not particularly limited, and can suitably set, but is preferably 50 ~ 200 μm.

For caking agent, there is such type: harden due to the irradiation of ray thus the ray hardened type that bonding force is reduced; With the non-ray hardened type that bonding force can not change because of the irradiation of ray.

The constituent material of bond layer 20 is not particularly limited, and can be the caking agent of ray hardened type, also can the caking agent of the ray hardened type of right and wrong.For the former, easily carry out the control of bonding force according to the irradiation dose of ray, for the latter, can use in the device not allowing radiation exposure, therefore, suitably select caking agent according to purposes.

As ray, such as, use ultraviolet.

The caking agent of ray hardened type comprises ray polymerization composition.

As ray polymerization composition, as long as three-dimensional nettedization can be realized by radiation exposure, be not particularly limited, such as, can methyl acrylate be listed, methyl methacrylate, ethyl propenoate, β-dimethyl-aminoethylmethacrylate, butyl acrylate, butyl methacrylate, ethyl acrylate, methacrylic acid-2-ethylhexyl, pentenyl acrylate, tetrahydrofurfuryl acrylate, tetrahydrofurfuryl methacrylic ester, diethylene glycol diacrylate, triethylene glycol diacrylate, Viscoat 335HP, diethylene glycol dimethacrylate, triethylene glycol dimethacrylate, tetraethylene glycol dimethacrylate, polyethyleneglycol diacrylate, trimethylolpropane diacrylate, Viscoat 295, TriMethylolPropane(TMP) dimethacrylate, trimethylolpropane trimethacrylate, 1,4 butanediol diacrylate, 1,6 hexanediol diacrylate, BDO dimethacrylate, HDDMA, pentaerythritol triacrylate, tetramethylol methane tetraacrylate, pentaerythritol acrylate trimethyl, pentaerythritol tetramethylacrylate, Dipentaerythritol monohydroxypentaacrylate, dipentaerythritol acrylate, Dipentaerythritol hexamethacrylate, oligomer ester acrylate, vinylbenzene, Vinylstyrene, 4-Vinyl toluene, 4-vinylpridine, NVP, 2-hydroxyethylmethacry,ate, 2-HEMA, 1,3-acryloxy-2-hydroxy propane, 1,2-methacryloxy-2-hydroxy propane, methylene-bisacrylamide, N,N-DMAA, N hydroxymethyl acrylamide, the triacrylate of three (beta-hydroxy ethyl) isocyanuric acid ester, isocyanate compound, carbamate (methyl) acrylic compound, diamines and isocyanate compound, urea methacrylate compound, and there is at side chain the ray polymerization multipolymer of ethylenic unsaturated group.

In addition, as ray polymerization composition, urethane acrylate system oligopolymer can be exemplified out, this urethane acrylate system oligopolymer is obtained by such as under type: make the polyol of polyester type or polyether-type etc. and polyhydric isocyanate compound (such as, 2, 4-tolylene diisocyanate, 2, 6-tolylene diisocyanate, 1, 3-Xylene Diisocyanate, 1, 4-Xylene Diisocyanate, ditane-4, 4-vulcabond etc.) reaction, obtain terminal isocyanate carbamate prepolymer, make to have the acrylate of hydroxyl or methacrylic ester (such as, 2-hydroxyethylmethacry,ate, 2-HEMA, 2-acrylate, 2-hydroxy propyl methacrylate, polyethylene glycol acrylate, polyethylene glycol methacrylate-styrene polymer etc.) react with terminal isocyanate carbamate prepolymer, thus obtain described urethane acrylate system oligopolymer.

These ray polymerization compounds can be used alone, and also two or more ray polymerization compound combinations can be got up use.

The thickness of bond layer 20 is not particularly limited, and is generally 5 ~ 50 μm, is preferably 7 ~ 20 μm.

As shown in Fig. 1 (a), be formed with the strong bonding region 21 of circular contour shape (circular) at the bond layer 20 of splicing tape 1.Bond layer 20 with strong bonding region 21 for boundary demarcation becomes interior region 24 and external region 26.

As shown in Fig. 1 (b), strong bonding region 21 also can be quadrilateral shape.

The shape of strong bonding region 21 is selected according to the workpiece (machined object) pasted thereon.Such as, as shown in Figure 2 (a) shows, when the object of workpiece is wafer 30 of toroidal, the circular shape as strong bonding region 21 is selected.On the other hand, as shown in Fig. 2 (b), when the object of workpiece is rectangular-shaped semiconductor package part 31, select quadrilateral shape as the shape of strong bonding region 21.

As shown in Fig. 3 (a), Fig. 3 (b), about splicing tape 1, consider relative to when the stickup of the workpiece such as wafer 30 or semiconductor package part 31 or cutting relative to annular frame 60(with reference to Fig. 7) the operability of installation etc., also precut can be taked to process to splicing tape 1.

The splicing tape 1 of Fig. 3 (a), Fig. 3 (b) presents the shape be made up of the label portion 1a corresponding with the shape of annular frame 60 and the periphery 1b of periphery that surrounds label portion 1a, and these positions are stripped film 2 and support and protect.Strong bonding region 21, interior region 24 and external region 26 are formed at label portion 1a.

When use this splicing tape 1, from stripping film 2, label portion 1a is peeled off, and is pasted on workpiece to use.Periphery 1b and stripping film 2 are together removed.

Further, wafer 30 or semiconductor package part 31 are examples for workpiece, when using the workpiece outside this, also suitably can change the shape of strong bonding region 21 according to used workpiece shapes.

In the present embodiment, be described using the example of wafer 30 as workpiece especially.

As shown in Figure 4, strong bonding region 21 is positions (region) corresponding with the circumference of wafer 30, and strong bonding region 21 is made up of the support 23 of strong adhesive portion 22 and this strong adhesive portion 22 of supporting.

In the present embodiment, interior region 24, external region 26 and support 23 are made up of integratedly the caking agent of the identical ray hardened type containing above-mentioned ray polymerization composition.

Strong adhesive portion 22 is formed with interior region 24 and external region 26 split ground, and the bonding force comprising the strong bonding region 21 of strong adhesive portion 22 becomes partially than interior region 24 and external region 26 height.

About strong adhesive portion 22, can be formed by operation direct adhesive-applying on support 23 different from the formation process of interior region 24, external region 26 and support 23, also can be that on the base material different from base material film 10, adhesive-applying being pasted is formed for the time being.As described caking agent, use component and the identical or different tackiness agent of caking agent forming interior region 24, external region 26 and support 23, preferably use component caking agent unlike this.By using component caking agent unlike this, special adhesion properties can be had in the maintenance of adherend.

Strong adhesive portion 22 is preferably formed with the caking agent of non-ray hardened type.If formed strong adhesive portion 22 with the caking agent of non-ray hardened type, then can always keep strong bonding force, and can not by the impact of radiation exposure.

As the caking agent of non-ray hardened type, be not particularly limited, the known chlorinated polypropylene, acrylic resin, vibrin, urethane resin, epoxy resin etc. that use in caking agent can be used in.

The caking agent of the strong adhesive portion 22 of preferred formation has high cohesion.

In order to improve the cohesive force of caking agent, such as, preferably make the weight-average molecular weight of this caking agent entirety more than 100,000.

" weight-average molecular weight " refers to, uses the typical curve of polystyrene standard to detect by gel permeation chromatography (GPC) method.

(measuring condition based on GPC method)

Use equipment: high performance liquid chromatograph LC-6A [Shimadzu Scisakusho Ltd manufactures, trade(brand)name]

Post: ShodexK2002, ShodexK2003 [Shimadzu Scisakusho Ltd manufactures, trade(brand)name]

Elutriant: chloroform

Measuring tempeature: 45 DEG C

Flow: 2.8ml/min

RI detector: RID-10A

The transmittance comprising the strong bonding region 21 of strong adhesive portion 22 is different with external region 26 from interior region 24.

" transmittance " refers to the transmissivity measured with wavelength 650nm when using the spectrophotometer UV3101PC of Shimadzu Seisakusho Ltd.'s manufacture as measuring apparatus and making measurement wavelength region may be 400 ~ 1000nm.

The method changed as making transmittance, can be painted to the caking agent of strong adhesive portion 22, and the caking agent of strong adhesive portion 22 can be made to be separated, and the thickness of strong adhesive portion 22 also can be made thickening.In these methods, be preferred to the method that caking agent is painted, according to the method, the impact of the bonding force on caking agent can be reduced, and transmittance can be made to change significantly, thus optical pickocff can be utilized easily to differentiate strong bonding region 21.

As colorize method, adopt following method: use dyestuff as the method for tinting material; With the method etc. pigment being added into caking agent as tinting material dispersion.

Also non-compatibility polymkeric substance or particulate, ultraviolet reflection agent etc. can be added in caking agent.

About tinting material, known dyestuff or pigment can be used, such as, can exemplify out the metal powder pigment etc. of the organic system dyestuffs such as carbon black, black iron oxide, azo system, anthraquinone system, phthalocyanine system, thioindigo system, quinacridone, dioxazine system or pigment or ultramarine, dark blue, the inorganic series pigments such as chrome vermilion, colcother, cadmium red, molybdate orange or metalluster.

Consider from the dispersed this point caking agent, preferably adopt organic system dyestuff.

Further, about tinting material, only can be used alone one, also can use after two or more colorant combination.

The average particle diameter of pigment, preferably at more than 5nm and below 30 μm, is more preferably at more than 10nm and below 3 μm, preferred at more than 50nm and below 1 μm further.As long as make the average particle diameter of pigment in above-mentioned scope, the dispersiveness in caking agent that would not occur because cohesion etc. causes is degenerated, and bulk cohesion also can not occur in caking agent, in addition, controls also to become easy to the degree of staining of caking agent.

The addition of the tinting material in the caking agent of strong adhesive portion 22 is not particularly limited, and relative to the entirety of the material of the strong adhesive portion 22 of formation, is generally 0.01 ~ 5 quality %, is preferably 0.05 ~ 2 quality %, is more preferably 0.1 ~ 1 quality %.If the addition of tinting material is in above-mentioned scope, then less on the impact of bonding force, and the favorable dispersity of pigment.

As the particulate that can be added into caking agent, the stopping composition such as ceramic-like and carbon such as silicon-dioxide, clay, gypsum, calcium carbonate, barium sulfate, titanium nitride, silicon carbide and silicon nitride can be listed.

As the ultraviolet reflection agent that can be added into caking agent, the stopping composition of the metals such as aluminum oxide, beryllium oxide, aluminium, copper, silver, gold, nickel, chromium, lead, tin, zinc, palladium, scolding tin or alloy type can be listed.

As shown in Figure 5, when using splicing tape 1, strong bonding region 21 becomes the benchmark of location, and wafer 30 is pasted on bond layer 20, in this condition cut crystal 30.

The internal diameter of strong adhesive portion 22 designs less than the diameter of wafer 30, and the external diameter of strong adhesive portion 22 designs larger than the diameter of wafer 30.

The width of strong adhesive portion 22 decides according to the size etc. of wafer 30, is 1 ~ 20mm in reality, is preferably 2 ~ 15mm, is more preferably 5 ~ 10mm.

As shown in Figure 5, under the state that wafer 30 is pasted on bond layer 20, the inner edge portion 22a of strong adhesive portion 22 is configured in the inner side of the side edge part 30a of wafer 30, and the outer edge 22b of strong adhesive portion 22 is configured in the outside of the side edge part 30a of wafer 30.

Strong bonding region 21 corresponding with the circumference of wafer 30 (opposed), interior region 24 is corresponding with the position manufacturing chip from wafer 30.

Strong adhesive portion 22 has certain height, and it is highly about 5 μm, very low, even if under the state being pasted with wafer 30, does not also almost form ladder difference (even if be formed with the poor degree also can ignoring this ladder difference of ladder in the circumference of wafer 30.）。

When making the strong adhesive portion 22 of strong bonding region 21() bonding force when being (A) and making the bonding force of interior region 24 for (B), the bonding force in each region meets the condition of formula (1-1).

（A）＞（B）…（1-1）

In reality, preferably make the bonding force of strong bonding region 21 0.1N/25mm more than larger than the bonding force of interior region 24.

Further, when cut crystal 30, by annular frame 60 fixed bonding band 1.In this case, external region 26 corresponds to the position (with reference to Fig. 8) of configuration annular frame 60.

When making the bonding force of external region 26 for (C), its bonding force with the relation of (A), (B) in meet the condition of formula (1-2).

（A）＞（C）≥（B）…（1-2）

Annular frame 60 is examples for the fixing part for fixed bonding band 1.

For this fixing part, having more than is annular frame 60 self, also comprises and has the function identical with annular frame 60 or the parts of effect.

" bonding force " of the regional of strong bonding region 21, interior region 24 and external region 26 refers to, when splicing tape 1 is pasted on silicon mirror wafer, bonding force when peeling this splicing tape 1 with the speed of 50mm/min, the angle of 90 degree from wafer.

Next, the manufacture method of the semi-conductor chip using splicing tape 1 is described.

As shown in Figure 6 (a), the surface 32 of wafer 30 is made to fit in supporting plate 50 across tackiness agent (binder layer 40), to support and to protect wafer 30.Supporting plate 50 is parts of the generation of the generation of intensity crackle preventing for keeping wafer 30 or the warpage of wafer 30.

Then, back of the body mill process (ground) is implemented to the back side 34 of wafer 30, makes wafer 30 thinning.In this operation, along with wafer 30 is thinning, the intensity of wafer 30 reduces, thus can produce the warpage etc. of crack or wafer 30 self, therefore, inhibits such phenomenon by supporting plate 50.

Then, as shown in Figure 6 (b), wafer 30 is pasted on splicing tape 1 under the state being fitted with supporting plate 50.In this case, with the strong bonding region 21 of the bond layer 20 of splicing tape 1 for positioning datum, wafer 30 is pasted on splicing tape 1, between the inner edge portion 22a making the side edge part 30a of wafer 30 be configured in strong adhesive portion 22 and outer edge 22b.

In this condition, the strong adhesive portion 22 of bond layer 20 and the circumference 42 of binder layer 40 opposed across wafer 30, the interior region 24 of bond layer 20 is opposed with the central part 44 of binder layer 40.

When making the engaging force of circumference 42 for (a) and making the engaging force of central part 44 for (b), the engaging force in each portion with the relation of (A), (B) in meet the condition of formula (1-3).

（A）＞（a）≥（B）≥（b）…（1-3）

Then, from wafer 30 by binder layer 40 and supporting plate 50 simultaneously (together with) peel off.In this case, also there is wafer 30 together with binder layer 40 and supporting plate 50 by the possibility peelled off from splicing tape 1, but such such as formula (1-3), and the engaging force of the circumference 42 of the bonding force specific adhesion oxidant layer 40 of strong bonding region 21 is large, therefore, wafer 30 can be prevented to peel off from splicing tape 1.

Then, as shown in Figure 7, annular frame 60 is in the form of a ring pasted relative to bond layer 20, thus fixed bonding band 1.

The internal diameter of annular frame 60 is designed to be larger than the external diameter of wafer 30.Under the state that splicing tape 1 is fixed on annular frame 60, between annular frame 60 and wafer 30, form trickle gap.

The external diameter of strong adhesive portion 22 designs less than the internal diameter of annular frame 60.

As shown in Figure 8, under the state that splicing tape 1 is fixed on annular frame 60, the outer edge 22b of strong adhesive portion 22 is configured in the inner side of the inner edge portion 60a of annular frame 60, and annular frame 60 is glued to the external region 26 of bond layer 20.

Then, as shown in Figure 7, wafer 30 is cut into rectangular (reticulation).As cutting method, such as cutter cutting, laser cutting or stealthy cutting etc. can be used.Consequently, multiple chips 36 of rectangular shape are produced.

On the other hand, while manufacture chip 36, the bad chip 38 that cannot form electronic unit can also be formed in the outside (circumference of wafer 30) of chip 36.

The peak width (distance between the outermost position at the side edge part 30a of wafer 30 and the position of manufacture chip 36) forming bad chip 38 is generally about 2 ~ 3mm, in this case, to make the inner edge portion 22a of strong adhesive portion 22 be configured in adhesive portion 22 stronger than the patten's design of the side edge part 30a position of about 5mm in the inner part of wafer 30.

Certainly, suitably can change the width of strong adhesive portion 22, also can inner edge portion 22a be configured more in the inner part, thus, even chip 36, also can be used as bad chip 38 and be adhered to strong adhesive portion 22 and reclaim.Also can the outer edge 22b of strong adhesive portion 22 be configured more outward, to make outer edge 22b consistent with the inner edge portion 60a of annular frame 60.

Then, as shown in Figure 9, make cylindric upper teat part 70 increase from the below of base material film 10 and expand splicing tape 1.Consequently, splicing tape 1 is stretched in the circumferential direction, thus divides wafer 30 with chip unit.

Then, to bond layer 20 useful to irradiation of rays, the bonding force of interior region 24 is reduced, as shown in Figure 10, adsorb this chip 36 by plunger tip sheet 36 in upper projecting pin 72 to adsorb chuck 74.Carry out pick-up chip 36 thus.

About the bonding force of interior region 24 and external region 26, under the state before splicing tape 1 is expanded, basic identical of the bonding force in each region, (C)=(B) in formula (1-2).Further, after splicing tape 1 is expanded, if make to make the bonding force of interior region 24 lower than the bonding force of external region 26 to the irradiation dose of the ray that interior region 24 irradiates than external region more than 26, then the pick of chip 36 can be improved.In this case, in formula (1-2), meet the condition of (C) > (B).

According to above present embodiment, such such as formula (1-3), because the bounding force of the circumference 42 of the bonding force specific adhesion oxidant layer 40 of strong bonding region 21 is large, therefore, when peeling supporting plate 50 after wafer 30 is pasted on splicing tape 1 (with reference to Fig. 6), can prevent wafer 30 from peeling off from splicing tape 1.

In addition, such such as formula (1-1), because the bonding force of strong bonding region 21 is larger than the bonding force of interior region 24, therefore, when cut crystal 30 (with reference to Fig. 7 and Fig. 8), can also prevent the bad chip 38 formed in the circumference of wafer 30 from chip occurring and fly out.When expanding splicing tape 1 (with reference to Fig. 9), the state making bad chip 38 be adhered to strong adhesive portion 22 can be maintained, in this case, also can prevent bad chip 38 from chip occurring and fly out.

[variation]

Form substituting of strong adhesive portion 22 dividually as with interior region 24 and external region 26, as shown in Figure 11 (a) shows, also can form strong adhesive portion 22 integratedly with interior region 24 and external region 26.

In this case, as shown in Figure 11 (b), under the state that wafer 30 is pasted on bond layer 20, the inner edge portion 22a of strong adhesive portion 22 is configured in the inner side of the side edge part 30a of wafer 30, and the outer edge 22b of strong adhesive portion 22 is configured in the outside of the side edge part 30a of wafer 30.Under the state that splicing tape 1 is fixed on annular frame 60, the outer edge 22b of strong adhesive portion 22 is configured in the inner side of the inner edge portion 60a of annular frame 60, and annular frame 60 is glued to the external region 26 of bond layer 20.

In this variation, strong adhesive portion 22 is made up of the material identical with external region 26 with interior region 24, by the irradiation dose of method control rays such as covering, makes it to the bonding force of wafer 30 partly than interior region 24 and external region 26 height.As the substituting of control of the irradiation dose to ray, can make strong adhesive portion 22 than interior region 24 and external region 26 thick, thus the bonding force making strong adhesive portion 22 partly than interior region 24 and external region 26 high.

According to this above variation, when peeling supporting plate 50, can prevent wafer 30 from peeling off from splicing tape 1, when cut crystal 30 or when expanding wafer 30, also can prevent bad chip 38 from chip occurring and flying out.

[the 2nd embodiment]

2nd embodiment is mainly different from the 1st embodiment in following, the structure beyond this or effect identical with the 1st embodiment.

The splicing tape 1 of present embodiment is the cutting belt of chips welding, as shown in Figure 12 (a), bond layer 20 is formed with binder layer 100.

Binder layer 100 and bond layer 20 fit tightly, and when pick-up chip 36, binder layer 100 is peeled off from bond layer 20 under the state being attached to chip 36.

The material used in binder layer 100 is not particularly limited, and can be used in known polyimide resin, polyamide resin, polyetherimide resin, polyamideimide resin, vibrin, polyesterimide resin, polyphenylene oxide resin, polysulfone resin, polyethersulfone resin, polyphenylene sulfide, polyether ketone resin, chlorinated polypropylene, acrylic resin, urethane resin, epoxy resin and the oligomeric system of silicon etc. that use in tackiness agent.

Binder layer 100 presents the toroidal corresponding with the shape of wafer 30.

As shown in Figure 12 (b), the diameter design of binder layer 100 must be larger than the diameter of wafer 30, and less than the external diameter of strong adhesive portion 22.

With the relation of wafer 30, the side edge part 100a of binder layer 100 is configured at the outside of side edge part 30a, and with the relation of strong adhesive portion 22, the side edge part 100a of binder layer 100 is configured at the outside of inner edge portion 22a, and is configured at the inner side of outer edge 22b.

In this case, strong bonding region 21 is across binder layer 100 corresponding with the circumference of wafer 30 (opposed), and interior region 24 is corresponding with the position manufacturing chip 36 from wafer 30.

When by strong for strong bonding region 21(adhesive portion 22) when being set to (D) to the bonding force of binder layer 100 and the bonding force of interior region 24 pairs of binder layers 100 is set to (E), the bonding force in each region meets the condition of formula (2-1).

（D）＞（E）…（2-1）

The bonding force of strong bonding region 21 and interior region 24 pairs of binder layers 100 with the relation of (C) in meet the condition of formula (2-2).

（D）＞（C）≥（E）…（2-2）

Further, the shape of binder layer 100 also suitably can change according to the shape of workpiece, and such as, when workpiece is rectangular-shaped semiconductor package part 31, making binder layer 100 also is correspondingly quadrilateral shape.

In addition, as described above, strong adhesive portion 22 has certain height, it is highly about 5 μm, very low, even if under the state being formed with binder layer 100, almost do not form ladder difference in the circumference of binder layer 100 (even if be formed with the poor degree yet can ignoring this ladder difference of ladder yet.）。

In addition, in the present embodiment, need strong adhesive portion 22 is repeated with binder layer 100 and the circumference both wafer 30, the width of strong adhesive portion 22 is 5 ~ 30mm, is preferably about 20mm.

When manufacturing chip 36, the process identical with situation about being described with reference to Fig. 6 ~ Figure 10 is taked to wafer 30.

In this case, in the state being fitted with supporting plate 50, wafer 30 is pasted on splicing tape 1(with reference to Fig. 6 (b)), the strong adhesive portion 22 of bond layer 20 and the circumference 42 of binder layer 40 across wafer 30 and binder layer 100 opposed, the interior region 24 of bond layer 20 is opposed with the central part 44 of binder layer 40.

The bonding force of strong bonding region 21 and interior region 24 pairs of binder layers 100 with the relation of (a) and (b) in meet the condition of formula (2-3).

（D）＞（a）＞（E）≥（b）…（2-3）

Therefore, in this case, when peeling supporting plate 50, can prevent wafer 30 from peeling off from splicing tape 1.

Expand splicing tape 1 and pick-up chip 36 time (with reference to Fig. 9 and Figure 10), under the state before splicing tape 1 is expanded, the bonding force of interior region 24 pairs of binder layers 100 is substantially identical with the bonding force of external region 26, (C)=(E) in formula (2-2).And, after splicing tape 1 is expanded, if make to make the bonding force of interior region 24 lower than the bonding force of external region 26 to the irradiation dose of the ray that interior region 24 irradiates than external region more than 26, then in formula (2-2), meet the condition of (C) > (E).

When pick-up chip 36 (with reference to Figure 10), keep making binder layer 100 be attached to the state pick-up chip 36 at the back side of chip 36, and keep this state to carry out chips welding.Like this, in the present embodiment, owing to keeping the state making binder layer 100 be attached to the back side of chip 36, chips welding is carried out to chip 36, therefore, without the need to carrying out the process of the back side such as back of the body mill to the back side 34 of wafer 30, also without the need to carrying out supporting plate 50 to affix to the surface 32 of wafer 30 and the process peeled.

According to above present embodiment, particularly when cut crystal 30, not only can form bad chip 38 in the circumference of wafer 30, also can form cut off machine in the circumference of binder layer 100, but it is such such as formula (2-1), because the bonding force of strong bonding region 21 is larger than the bonding force of interior region 24, therefore, no matter be when cut crystal 30, or when expanding splicing tape 1, all can not only prevent from bad chip 38 from chip occurring to fly out, can also prevent the cut off machine of binder layer 100 from dispersing.

[variation]

In this variation, form substituting of strong adhesive portion 22 dividually as with interior region 24 and external region 26, as shown in Figure 13 (a), also can form strong adhesive portion 22 integratedly with interior region 24 and external region 26.

In this case, as shown in Figure 13 (b), with the relation of wafer 30, the side edge part 100a of binder layer 100 is configured at the outside of side edge part 30a, with the relation of strong adhesive portion 22, the side edge part 100a of binder layer 100 is configured at the outside of inner edge portion 22a, and is configured at the inner side of outer edge 22b.

According to this above variation, occur bad chip 38 can be prevented, on basis that chip flies out, dispersing of the cut off machine of binder layer 100 can also be prevented.

Claims

1. a splicing tape, is characterized in that,

Described splicing tape possesses:

Bond layer, it is for pasting wafer; With

Base material film, it is for supporting described bond layer,

The 1st region, the 2nd region and the 3rd region is there is at described bond layer, described 1st region is corresponding with the circumference of described wafer, described 2nd region is corresponding with the position forming chip from described wafer, and described 3rd region is corresponding with the position being configured for the fixing part fixing this splicing tape

Described bond layer with described 1st region for boundary demarcation becomes described 2nd region and the 3rd region,

Under the state that described wafer is pasted on described bond layer, the inner edge portion in described 1st region is configured in the inner side of the side edge part of described wafer, and the outer edge in described 1st region is configured in the outside of the side edge part of described wafer,

Be (A) when making the bonding force in described 1st region, when making the bonding force in described 2nd region be (B) and make the bonding force in described 3rd region for (C), the bonding force in each region meet the condition of formula (1-2):

(A)＞(C)≥(B)…(1-2)。

2. splicing tape according to claim 1, is characterized in that,

The transmittance in described 1st region is different from other region.

3. splicing tape according to claim 2, is characterized in that,

Described 1st region is made up of the support of strong adhesive portion and this strong adhesive portion of supporting,

Described strong adhesive portion is formed dividually with other region beyond described 1st region.

4. splicing tape according to claim 2, is characterized in that,

Described 1st region has strong adhesive portion,

Described strong adhesive portion is formed integratedly with other region beyond described 1st region.

5. a splicing tape, is characterized in that,

Described splicing tape possesses:

Binder layer, it is for pasting wafer;

Bond layer, it is formed at below described binder layer; And

The 1st region, the 2nd region and the 3rd region is there is at described bond layer, described 1st region is corresponding with the circumference of described wafer across described binder layer, described 2nd region is corresponding with the position forming chip from described wafer, described 3rd region is corresponding with the position being configured for the fixing part fixing this splicing tape

Under the state that described wafer is pasted on described binder layer, the inner edge portion in described 1st region is configured in the inner side of the side edge part of described wafer, and the outer edge in described 1st region is configured in the outside of the side edge part of described wafer,

When make described 1st region to the bonding force of described binder layer be (D), make described 2nd region be (E) to the bonding force of described binder layer and make the bonding force in described 3rd region for (C), the bonding force in each region meets the condition of formula (2-2):

(D)＞(C)≥(E)…(2-2)。

6. splicing tape according to claim 5, is characterized in that,

The transmittance in described 1st region is different from other region.

7. splicing tape according to claim 6, is characterized in that,

8. splicing tape according to claim 6, is characterized in that,

Described 1st region has strong adhesive portion,