TWI456749B - 製造固態成像器件之方法,固態成像器件,及電子裝置 - Google Patents
製造固態成像器件之方法,固態成像器件,及電子裝置 Download PDFInfo
- Publication number
- TWI456749B TWI456749B TW100130805A TW100130805A TWI456749B TW I456749 B TWI456749 B TW I456749B TW 100130805 A TW100130805 A TW 100130805A TW 100130805 A TW100130805 A TW 100130805A TW I456749 B TWI456749 B TW I456749B
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- Prior art keywords
- patterns
- imaging device
- state imaging
- solid
- manufacturing
- Prior art date
Links
- 238000003384 imaging method Methods 0.000 title claims 11
- 238000004519 manufacturing process Methods 0.000 title claims 10
- 239000000463 material Substances 0.000 claims 5
- 238000006243 chemical reaction Methods 0.000 claims 3
- 230000003287 optical effect Effects 0.000 claims 2
- 239000012780 transparent material Substances 0.000 claims 2
- 239000011368 organic material Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Optical Filters (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Color Television Image Signal Generators (AREA)
Claims (9)
- 一種製造一固態成像器件之方法,其包括:在配置於一基板之一表面上之複數個光電轉換單元中之一些光電轉換單元上形成複數個第一圖案,每一第一圖案具有一獨立島形形狀,該第一圖案係從一光學濾光器材料加以組態;於每一第一圖案之一側壁上形成一混合色彩防止層;在該複數個光電轉換單元中之剩餘光電轉換單元上形成複數個第二圖案,每一第二圖案具有一獨立島形形狀,該第二圖案係從一光學濾光器材料加以組態,該混合色彩防止層係安置於每一第一圖案與每一第二圖案之間;及分別在該複數個第一圖案與第二圖案之上形成複數個透鏡,其中,每一第一圖案對應至一紅色濾光器、綠色濾光器及一藍色濾光器,每一第二圖案對應至一白色濾光器,及該複數個第二圖案及該複數個透鏡係從一相同材料形成,以使一第二圖案及其上之一相對應透鏡係一體成形。
- 如請求項1之製造一固態成像器件之方法,其中該混合色彩防止層之形成係藉由各向同性形成覆蓋該第一圖案之具有比該第一圖案薄之一厚度之該混合色彩防止層加 以執行。
- 如請求項2之製造一固態成像器件之方法,其中該混合色彩防止層之形成係藉由覆蓋具有該混合色彩防止層之該複數個第一圖案及移除該混合色彩防止層加以執行,以使該混合色彩防止層係僅留於每一第一圖案之該側壁上。
- 如請求項1之製造一固態成像器件之方法,其中每一第二圖案係安置於該等第一圖案之一者及該等第一圖案之另一者之間。
- 如請求項1之製造一固態成像器件之方法,其中該混合色彩防止層具有低於該第一圖案之一折射率及該第二圖案之一折射率之一折射率。
- 如請求項1之製造一固態成像器件之方法,其中該複數個第一圖案及該複數個第二圖案係安置成一棋盤圖案。
- 如請求項1之製造一固態成像器件之方法,其中該相同材料係一無色透明材料。
- 如請求項1之製造一固態成像器件之方法,其中該無色透明材料從一紅色區域傳送光至一藍色區域。
- 如請求項1之製造一固態成像器件之方法,其中該相同材料係一有機材料。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010217861A JP2012074521A (ja) | 2010-09-28 | 2010-09-28 | 固体撮像装置の製造方法、固体撮像装置、および電子機器 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201225271A TW201225271A (en) | 2012-06-16 |
TWI456749B true TWI456749B (zh) | 2014-10-11 |
Family
ID=45870297
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW100130805A TWI456749B (zh) | 2010-09-28 | 2011-08-26 | 製造固態成像器件之方法,固態成像器件,及電子裝置 |
Country Status (5)
Country | Link |
---|---|
US (2) | US8669134B2 (zh) |
JP (1) | JP2012074521A (zh) |
KR (1) | KR20120032416A (zh) |
CN (1) | CN102420235A (zh) |
TW (1) | TWI456749B (zh) |
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JP2012191136A (ja) * | 2011-03-14 | 2012-10-04 | Sony Corp | 固体撮像装置、固体撮像装置の製造方法、電子機器 |
JP2013088557A (ja) * | 2011-10-17 | 2013-05-13 | Toshiba Corp | 固体撮像装置、及び固体撮像装置の製造方法 |
JP2013165216A (ja) * | 2012-02-13 | 2013-08-22 | Fujifilm Corp | 撮像素子 |
JP2014022649A (ja) * | 2012-07-20 | 2014-02-03 | Nikon Corp | 固体撮像素子、撮像装置、及び電子機器 |
JP6130221B2 (ja) | 2013-05-24 | 2017-05-17 | ソニー株式会社 | 固体撮像装置、および電子機器 |
US9692992B2 (en) * | 2013-07-01 | 2017-06-27 | Omnivision Technologies, Inc. | Color and infrared filter array patterns to reduce color aliasing |
US9667933B2 (en) * | 2013-07-01 | 2017-05-30 | Omnivision Technologies, Inc. | Color and infrared filter array patterns to reduce color aliasing |
CN105453268B (zh) * | 2013-08-07 | 2019-02-05 | 索尼公司 | 固态成像装置和电子设备 |
US9064989B2 (en) | 2013-08-30 | 2015-06-23 | Taiwan Semiconductor Manufacturing Company Limited | Photo diode and method of forming the same |
CN104425521A (zh) * | 2013-09-09 | 2015-03-18 | 中芯国际集成电路制造(上海)有限公司 | 一种cmos图像传感器及其制造方法 |
JP2015076475A (ja) * | 2013-10-08 | 2015-04-20 | ソニー株式会社 | 固体撮像装置およびその製造方法、並びに電子機器 |
JP6237431B2 (ja) | 2014-04-15 | 2017-11-29 | ソニー株式会社 | 焦点検出装置、電子機器 |
JP2016001682A (ja) * | 2014-06-12 | 2016-01-07 | ソニー株式会社 | 固体撮像装置およびその製造方法、並びに電子機器 |
KR102192570B1 (ko) * | 2014-07-30 | 2020-12-17 | 삼성전자주식회사 | 컬러 필터들 사이에 위치하는 금속 패턴을 포함하는 이미지 센서 |
KR102299714B1 (ko) * | 2014-08-18 | 2021-09-08 | 삼성전자주식회사 | 컬러 필터 격리층을 구비하는 이미지 센서 및 상기 이미지 센서의 제조 방법 |
US9640576B2 (en) * | 2014-08-20 | 2017-05-02 | Visera Technologies Company Limited | Image sensing device and method for fabricating the same |
US10103194B2 (en) * | 2016-09-26 | 2018-10-16 | Omnivision Technologies, Inc. | Self-aligned optical grid on image sensor |
KR102628201B1 (ko) | 2016-10-05 | 2024-01-23 | 티씨엘 차이나 스타 옵토일렉트로닉스 테크놀로지 컴퍼니 리미티드 | 액정 표시 장치 |
JP2018200909A (ja) * | 2017-05-25 | 2018-12-20 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子および撮像装置 |
JP2018133575A (ja) * | 2018-03-08 | 2018-08-23 | ソニー株式会社 | 固体撮像装置、電子機器、及び、固体撮像装置の製造方法 |
KR102541294B1 (ko) | 2018-03-26 | 2023-06-12 | 에스케이하이닉스 주식회사 | 라이닝 층을 가진 위상차 검출 픽셀을 포함하는 이미지 센서 |
KR102507207B1 (ko) | 2018-04-11 | 2023-03-09 | 에스케이하이닉스 주식회사 | 낮은 굴절률을 갖는 패싱 필터를 포함하는 이미지 센서 |
KR102649313B1 (ko) * | 2019-02-13 | 2024-03-20 | 삼성전자주식회사 | 이미지 센서 |
KR102687972B1 (ko) | 2019-06-21 | 2024-07-25 | 삼성전자주식회사 | 이미지 센서 |
JP7103385B2 (ja) * | 2020-05-21 | 2022-07-20 | ソニーグループ株式会社 | 固体撮像装置及び電子機器 |
CN113178457B (zh) * | 2021-04-12 | 2022-11-11 | 维沃移动通信有限公司 | 像素结构和图像传感器 |
WO2023042246A1 (ja) * | 2021-09-14 | 2023-03-23 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子、及び電子機器 |
WO2023058326A1 (ja) * | 2021-10-07 | 2023-04-13 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
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2010
- 2010-09-28 JP JP2010217861A patent/JP2012074521A/ja not_active Ceased
-
2011
- 2011-08-26 TW TW100130805A patent/TWI456749B/zh not_active IP Right Cessation
- 2011-09-07 KR KR1020110090686A patent/KR20120032416A/ko not_active Application Discontinuation
- 2011-09-21 CN CN2011102812170A patent/CN102420235A/zh active Pending
- 2011-09-21 US US13/238,013 patent/US8669134B2/en not_active Expired - Fee Related
-
2014
- 2014-01-08 US US14/149,946 patent/US20140117482A1/en not_active Abandoned
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US7799491B2 (en) * | 2006-04-07 | 2010-09-21 | Aptina Imaging Corp. | Color filter array and imaging device containing such color filter array and method of fabrication |
US7786426B2 (en) * | 2007-06-06 | 2010-08-31 | Sony Corporation | Imaging device with a color filter that contains a layer only covering the surrounding areas |
Also Published As
Publication number | Publication date |
---|---|
JP2012074521A (ja) | 2012-04-12 |
CN102420235A (zh) | 2012-04-18 |
TW201225271A (en) | 2012-06-16 |
US20120075509A1 (en) | 2012-03-29 |
KR20120032416A (ko) | 2012-04-05 |
US8669134B2 (en) | 2014-03-11 |
US20140117482A1 (en) | 2014-05-01 |
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