TWI456094B - A method for fabricating iii-nitride with zinc-blende structure and an epitaxy structure having iii-nitride with zinc-blende structure - Google Patents

A method for fabricating iii-nitride with zinc-blende structure and an epitaxy structure having iii-nitride with zinc-blende structure Download PDF

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TWI456094B
TWI456094B TW101136739A TW101136739A TWI456094B TW I456094 B TWI456094 B TW I456094B TW 101136739 A TW101136739 A TW 101136739A TW 101136739 A TW101136739 A TW 101136739A TW I456094 B TWI456094 B TW I456094B
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Taiwan
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group iii
iii nitride
zinc
sphalerite
producing
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TW101136739A
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Chinese (zh)
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TW201414888A (en
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I Kai Lo
Cheng Hung Shih
Wen Yuan Pang
Yu Chi Hsu
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Univ Nat Sun Yat Sen
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Claims (13)

一種閃鋅礦結構三族氮化物之製造方法，其步驟係包含：備妥一γ相三氧化二鎵基材；及控制製程溫度小於420度，且周圍環境中三族元素與氮之比值小於2.0，使一閃鋅礦結構三族氮化物層磊晶成長於該γ相三氧化二鎵基材。A method for manufacturing a zinc-series structure of a tri-family nitride comprises the steps of: preparing a gamma-phase gallium oxide substrate; and controlling the process temperature to be less than 420 degrees, and the ratio of the tri-family element to nitrogen in the surrounding environment is less than 2.0, epitaxial growth of a zinc-mineral structure tri-family nitride layer on the gamma-phase di-gallium oxide substrate. 如申請專利範圍第1項所述之閃鋅礦結構三族氮化物之製造方法，其中該閃鋅礦結構三族氮化物層之成長溫度為350至420度。The method for producing a sphalerite structure group III nitride according to claim 1, wherein the sphalerite structure group III nitride layer has a growth temperature of 350 to 420 degrees. 如申請專利範圍第1項所述之閃鋅礦結構三族氮化物之製造方法，其中該三族元素與氮之比值的範圍為1.0至2.0。The method for producing a zinc blende structure group III nitride according to claim 1, wherein the ratio of the group III element to nitrogen ranges from 1.0 to 2.0. 如申請專利範圍第1項所述之閃鋅礦結構三族氮化物之製造方法，其中該閃鋅礦結構三族氮化物層為一閃鋅礦結構氮化鎵層。The method for producing a zinc blende structure group III nitride according to claim 1, wherein the zinc blende structure group III nitride layer is a sphalerite structure gallium nitride layer. 如申請專利範圍第1項所述之閃鋅礦結構三族氮化物之製造方法，其中該閃鋅礦結構三族氮化物層為一閃鋅礦結構氮化鋁層。The method for producing a zinc blende structure group III nitride according to claim 1, wherein the zinc blende structure group III nitride layer is a sphalerite structure aluminum nitride layer. 如申請專利範圍第1項所述之閃鋅礦結構三族氮化物之製造方法，其中該閃鋅礦結構三族氮化物層為一閃鋅礦結構氮化銦層。The method for producing a sphalerite structure group III nitride according to claim 1, wherein the sphalerite structure group III nitride layer is a sphalerite structure indium nitride layer. 如申請專利範圍第1項所述之閃鋅礦結構三族氮化物之製造方法，其中該閃鋅礦結構三族氮化物層為一閃鋅 礦結構氮化鋁鎵層。The method for producing a sphalerite structure group III nitride according to claim 1, wherein the sphalerite structure group III nitride layer is a zinc flash Mineral structure aluminum nitride gallium layer. 如申請專利範圍第1項所述之閃鋅礦結構三族氮化物之製造方法，其中該閃鋅礦結構三族氮化物層為一閃鋅礦結構氮化銦鎵層。The method for producing a zinc blende structure group III nitride according to claim 1, wherein the zinc blende structure group III nitride layer is a sphalerite structure indium gallium nitride layer. 如申請專利範圍第1項所述之閃鋅礦結構三族氮化物之製造方法，其中該閃鋅礦結構三族氮化物層為一閃鋅礦結構氮化鋁銦層。The method for producing a sphalerite structure group III nitride according to claim 1, wherein the sphalerite structure group III nitride layer is a sphalerite structure aluminum nitride indium layer. 如申請專利範圍第1項所述之閃鋅礦結構三族氮化物之製造方法，其中該γ相三氧化二鎵基材經過氮化處理，而形成一氮化鎵緩衝層，該閃鋅礦結構三族氮化物層磊晶成長於該氮化鎵緩衝層。The method for producing a sphalerite structure group III nitride according to claim 1, wherein the γ phase gallium oxide substrate is subjected to nitridation treatment to form a gallium nitride buffer layer, the sphalerite The structure tri-family nitride layer is epitaxially grown on the gallium nitride buffer layer. 如申請專利範圍第1項所述之閃鋅礦結構三族氮化物之製造方法，其中該γ相三氧化二鎵基材之製備方式係於真空環境中，將一β相鎵酸鋰基材進行一退火過程，使該β相鎵酸鋰基材轉變為該γ相三氧化二鎵基材。The method for producing a zinc-zinc oxide structure of a group III nitride according to the first aspect of the invention, wherein the γ-phase gallium dioxide substrate is prepared in a vacuum environment, and a β-phase lithium gallate substrate is used. An annealing process is performed to convert the β-phase lithium gallate substrate into the γ-phase gallium oxide substrate. 一種具有閃鋅礦結構三族氮化物之磊晶結構，包含：一γ相三氧化二鎵基材，具有一成長表面；及一閃鋅礦結構三族氮化物層，係設於該γ相三氧化二鎵基材之成長表面。An epitaxial structure having a zinc-mineral structure of a group III nitride, comprising: a gamma-phase gallium oxide substrate having a grown surface; and a sphalerite structure group III nitride layer disposed in the gamma phase III The growth surface of the GaN substrate. 如申請專利範圍第12項所述之具有閃鋅礦結構三族氮化物之磊晶結構，其中該γ相三氧化二鎵基材設有一氮化鎵緩衝層，該成長表面位於該氮化鎵緩衝層之表面。The epitaxial structure having a zinc blende structure of a group III nitride according to claim 12, wherein the gamma-phase gallium oxide substrate is provided with a gallium nitride buffer layer, and the grown surface is located in the gallium nitride layer The surface of the buffer layer.
TW101136739A 2012-10-04 2012-10-04 A method for fabricating iii-nitride with zinc-blende structure and an epitaxy structure having iii-nitride with zinc-blende structure TWI456094B (en)

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CN102326231A (en) * 2009-02-19 2012-01-18 住友电气工业株式会社 The formation method of epitaxial wafer and the manufacture method of semiconductor device

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CN102326231A (en) * 2009-02-19 2012-01-18 住友电气工业株式会社 The formation method of epitaxial wafer and the manufacture method of semiconductor device

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Ke Xu"Growth and characterization of LiGaO2 substrate crystal for GaN epitaxy"Journal of crystal Growth 216 (2000)343-347. 李忠憲"氮化銦鎵雷射二極體與發光二極體之設計與元件特性模擬研究"中華民國九十六年六月 *

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