TWI456080B - 遮罩組件及使用其之有機氣相沉積裝置與熱蒸鍍裝置 - Google Patents

遮罩組件及使用其之有機氣相沉積裝置與熱蒸鍍裝置 Download PDF

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TWI456080B
TWI456080B TW101125687A TW101125687A TWI456080B TW I456080 B TWI456080 B TW I456080B TW 101125687 A TW101125687 A TW 101125687A TW 101125687 A TW101125687 A TW 101125687A TW I456080 B TWI456080 B TW I456080B
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Taiwan
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mask
disposed
frame
openings
pixel
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TW101125687A
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TW201404900A (zh
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Wen Chun Wang
Hen Ta Kang
Kuo Chang Su
Siang Lin Huang
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Wintek Corp
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Priority to TW101125687A priority Critical patent/TWI456080B/zh
Priority to US13/943,799 priority patent/US20140020628A1/en
Publication of TW201404900A publication Critical patent/TW201404900A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H10K71/441—Thermal treatment, e.g. annealing in the presence of a solvent vapour in the presence of solvent vapors, e.g. solvent vapour annealing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)

Claims (19)

  1. 一種遮罩組件，設置在一氣體出口與一待鍍基板之間，包含有：一畫素遮罩，設置在該氣體出口與該待鍍基板之間，且具有複數個第一開口；以及一阻熱遮罩，設置在該氣體出口與該畫素遮罩之間，且具有複數個第二開口，其中各該第二開口對應至少一該第一開口設置。
  2. 如請求項1所述之遮罩組件，另包括一第一框架，且該阻熱遮罩固定在該第一框架上。
  3. 如請求項2所述之遮罩組件，另包括一第一隔熱膠層，設置於該阻熱遮罩與該第一框架之間。
  4. 如請求項2所述之遮罩組件，另包括一第二框架，且該畫素遮罩固定在該第二框架上。
  5. 如請求項4所述之遮罩組件，其中該第一框架設置在該阻熱遮罩與該氣體出口之間，且該第二框架設置在該畫素遮罩與該阻熱遮罩之間。
  6. 如請求項4所述之遮罩組件，其中該第一框架設置在該阻熱遮罩與該畫素遮罩之間，且該第二框架設置在該畫素遮罩與該待鍍基 板之間。
  7. 如請求項4所述之遮罩組件，另包括一第二隔熱膠層，設置於該畫素遮罩與該第二框架之間。
  8. 如請求項4所述之遮罩組件，其中該第一框架設置在該阻熱遮罩與該氣體出口之間，且該第二框架設置在該畫素遮罩與該待鍍基板之間。
  9. 如請求項8所述之遮罩組件，另包括至少一間隙物，設置在該阻熱遮罩與該畫素遮罩之間，並與該阻熱遮罩以及該畫素遮罩相接觸。
  10. 如請求項2所述之遮罩組件，其中該畫素遮罩固定在該第一框架上，且該第一框架設置在該阻熱遮罩與該畫素遮罩之間。
  11. 如請求項10所述之遮罩組件，另包括一第三隔熱膠層，設置於該畫素遮罩與該第一框架之間。
  12. 如請求項2所述之遮罩組件，另包括一冷卻迴路，設置在該第一框架中，用以傳輸一冷卻物質，以冷卻該第一框架。
  13. 如請求項1所述之遮罩組件，其中該阻熱遮罩包括一體成型之 一遮罩部以及一框架部，且該框架部之厚度大於該遮罩部之厚度。
  14. 如請求項13所述之遮罩組件，其中該畫素遮罩固定於該框架部上。
  15. 如請求項1所述之遮罩組件，另包括一隔熱層，設置在該阻熱遮罩面對該氣體出口之表面上。
  16. 如請求項1所述之遮罩組件，其中各該第二開口大於各該第一開口。
  17. 如請求項1所述之遮罩組件，其中該阻熱遮罩係為一共同遮罩(common mask)，且各該第二開口對應複數個該等第一開口設置。
  18. 一種有機氣相沉積裝置，用以沉積一有機材料於一待鍍基板上，該有機氣相沉積裝置包括：一氣體源，用以提供一待鍍氣體；一控制閥，連接於該氣體源之出口，用以控制該氣體源之氣體之流量與開關；一氣體噴頭(Shower Head)，對準該待鍍基板；一管線，一端連接於該控制閥，另一端連接於該氣體噴頭，用以將該待鍍氣體傳遞至該氣體噴頭；以及一遮罩組件，設置在該氣體噴頭與該待鍍基板之間，該遮罩組 件包括：一畫素遮罩，設置在該氣體噴頭與該待鍍基板之間，且具有複數個第一開口；以及一阻熱遮罩，設置在該氣體噴頭與該畫素遮罩之間，且具有複數個第二開口，其中各該第二開口對應至少一該第一開口設置。
  19. 一種熱蒸鍍裝置，用以蒸鍍一有機材料至一待鍍基板上，該熱蒸鍍裝置包括：一蒸鍍源，用以蒸發該有機材料；以及一遮罩組件，設置在該蒸鍍源與該待鍍基板之間，該遮罩組件包括：一畫素遮罩，設置在該蒸鍍源與該待鍍基板之間，且具有複數個第一開口；以及一阻熱遮罩，設置在該蒸鍍源與該畫素遮罩之間，且具有複數個第二開口，其中各該第二開口對應至少一該第一開口設置。
TW101125687A 2012-07-17 2012-07-17 遮罩組件及使用其之有機氣相沉積裝置與熱蒸鍍裝置 TWI456080B (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW101125687A TWI456080B (zh) 2012-07-17 2012-07-17 遮罩組件及使用其之有機氣相沉積裝置與熱蒸鍍裝置
US13/943,799 US20140020628A1 (en) 2012-07-17 2013-07-17 Shadow mask module and organic vapor deposition apparatus and thermal evaporation apparatus using the same

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TW101125687A TWI456080B (zh) 2012-07-17 2012-07-17 遮罩組件及使用其之有機氣相沉積裝置與熱蒸鍍裝置

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EP2960059B1 (en) 2014-06-25 2018-10-24 Universal Display Corporation Systems and methods of modulating flow during vapor jet deposition of organic materials
US11220737B2 (en) 2014-06-25 2022-01-11 Universal Display Corporation Systems and methods of modulating flow during vapor jet deposition of organic materials
US10562055B2 (en) 2015-02-20 2020-02-18 Si-Ware Systems Selective step coverage for micro-fabricated structures
US10566534B2 (en) 2015-10-12 2020-02-18 Universal Display Corporation Apparatus and method to deliver organic material via organic vapor-jet printing (OVJP)
JP2017150017A (ja) * 2016-02-23 2017-08-31 株式会社ジャパンディスプレイ 蒸着マスクの製造方法及び有機ｅｌディスプレイの製造方法
CN107236927B (zh) * 2017-06-16 2019-03-15 京东方科技集团股份有限公司 掩膜板模组、有机电致发光显示面板及其制作方法
WO2019045240A1 (ko) * 2017-09-01 2019-03-07 주식회사 티지오테크 프레임 일체형 마스크의 제조 방법
CN110462095B (zh) * 2017-11-01 2021-10-01 京东方科技集团股份有限公司 在基板上沉积沉积材料的蒸镀板、蒸镀设备、以及在基板上沉积沉积材料的方法
CN109735801A (zh) * 2019-01-31 2019-05-10 深圳市华星光电半导体显示技术有限公司 金属掩膜装置
KR20220056914A (ko) * 2020-10-28 2022-05-09 삼성디스플레이 주식회사 마스크 프레임 및 이를 포함하는 증착 장치

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TW201404900A (zh) 2014-02-01

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