TWI455360B - 發光元件、發光元件封裝及照明裝置 - Google Patents
發光元件、發光元件封裝及照明裝置 Download PDFInfo
- Publication number
- TWI455360B TWI455360B TW100116826A TW100116826A TWI455360B TW I455360 B TWI455360 B TW I455360B TW 100116826 A TW100116826 A TW 100116826A TW 100116826 A TW100116826 A TW 100116826A TW I455360 B TWI455360 B TW I455360B
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- electrode
- semiconductor layer
- conductive semiconductor
- distance
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims description 180
- 125000006850 spacer group Chemical group 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 2
- 239000010410 layer Substances 0.000 description 292
- 239000000463 material Substances 0.000 description 52
- 239000000758 substrate Substances 0.000 description 39
- 239000010408 film Substances 0.000 description 29
- 239000000470 constituent Substances 0.000 description 22
- 239000004973 liquid crystal related substance Substances 0.000 description 22
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 20
- 229910002601 GaN Inorganic materials 0.000 description 19
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 17
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 15
- 238000009792 diffusion process Methods 0.000 description 15
- 229910052707 ruthenium Inorganic materials 0.000 description 15
- 229910052738 indium Inorganic materials 0.000 description 13
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 13
- 230000004888 barrier function Effects 0.000 description 11
- 239000010931 gold Substances 0.000 description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 11
- 238000003780 insertion Methods 0.000 description 9
- 230000037431 insertion Effects 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- 239000011787 zinc oxide Substances 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 238000005286 illumination Methods 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 239000011777 magnesium Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 7
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 6
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 6
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 239000002131 composite material Substances 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 229910052732 germanium Inorganic materials 0.000 description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- -1 AGZO) Chemical compound 0.000 description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 239000012788 optical film Substances 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910052787 antimony Inorganic materials 0.000 description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 4
- 229910052797 bismuth Inorganic materials 0.000 description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 238000004020 luminiscence type Methods 0.000 description 4
- 239000010955 niobium Substances 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 239000004417 polycarbonate Substances 0.000 description 4
- 229920000515 polycarbonate Polymers 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 239000002096 quantum dot Substances 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000000565 sealant Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000011575 calcium Substances 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000012780 transparent material Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004954 Polyphthalamide Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 229910019897 RuOx Inorganic materials 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 229920010524 Syndiotactic polystyrene Polymers 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000008393 encapsulating agent Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 239000006089 photosensitive glass Substances 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920006375 polyphtalamide Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 description 2
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 229910018229 Al—Ga Inorganic materials 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910001029 Hf alloy Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229920012310 Polyamide 9T (PA9T) Polymers 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- DZLPZFLXRVRDAE-UHFFFAOYSA-N [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] Chemical compound [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] DZLPZFLXRVRDAE-UHFFFAOYSA-N 0.000 description 1
- DLCRXTYMOCAMIQ-UHFFFAOYSA-N [O].[Sn].[Bi] Chemical compound [O].[Sn].[Bi] DLCRXTYMOCAMIQ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 1
- 230000004313 glare Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020100046109A KR101110937B1 (ko) | 2010-05-17 | 2010-05-17 | 질화물 반도체 발광소자 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201214776A TW201214776A (en) | 2012-04-01 |
| TWI455360B true TWI455360B (zh) | 2014-10-01 |
Family
ID=44508423
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100116826A TWI455360B (zh) | 2010-05-17 | 2011-05-13 | 發光元件、發光元件封裝及照明裝置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10886436B2 (fr) |
| EP (1) | EP2388835B1 (fr) |
| KR (1) | KR101110937B1 (fr) |
| CN (1) | CN102255021B (fr) |
| TW (1) | TWI455360B (fr) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USD668234S1 (en) * | 2001-05-24 | 2012-10-02 | Lextar Electornics Corp. | LED chip |
| USD644187S1 (en) * | 2010-02-10 | 2011-08-30 | Epistar Corporation | Light emitting diode array |
| TWI505500B (zh) * | 2012-06-07 | 2015-10-21 | Lextar Electronics Corp | 發光二極體及其製造方法 |
| US9666779B2 (en) * | 2013-11-25 | 2017-05-30 | Yangzhou Zhongke Semiconductor Lighting Co., Ltd. | Semiconductor light emitting diode chip with current extension layer and graphical current extension layers |
| JP2016009817A (ja) * | 2014-06-26 | 2016-01-18 | 京セラ株式会社 | 発光素子 |
| KR101888608B1 (ko) * | 2014-10-17 | 2018-09-20 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 조명 장치 |
| JP2016115920A (ja) * | 2014-12-15 | 2016-06-23 | 豊田合成株式会社 | 発光素子 |
| US9905729B2 (en) * | 2015-03-27 | 2018-02-27 | Seoul Viosys Co., Ltd. | Light emitting diode |
| WO2017010705A1 (fr) * | 2015-07-10 | 2017-01-19 | 서울바이오시스 주식회사 | Diode électroluminescente, son procédé de fabrication, et module de dispositif électroluminescent la comprenant |
| KR102641239B1 (ko) | 2015-07-10 | 2024-02-29 | 서울바이오시스 주식회사 | 발광 다이오드, 그것을 제조하는 방법 및 그것을 갖는 발광 소자 모듈 |
| USD845920S1 (en) | 2015-08-12 | 2019-04-16 | Epistar Corporation | Portion of light-emitting diode unit |
| CN106486572B (zh) * | 2015-09-02 | 2020-04-28 | 新世纪光电股份有限公司 | 发光二极管芯片 |
| KR102455088B1 (ko) * | 2016-01-11 | 2022-10-14 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 박막 트랜지스터 기판, 이를 포함하는 표시패널 및 표시장치 |
| TWI723207B (zh) | 2016-08-18 | 2021-04-01 | 新世紀光電股份有限公司 | 微型發光二極體及其製造方法 |
| CN107768487A (zh) | 2016-08-18 | 2018-03-06 | 新世纪光电股份有限公司 | 巨量转移电子元件的方法 |
| TWD190563S (zh) * | 2017-06-23 | 2018-05-21 | 晶元光電股份有限公司 | 發光二極體陣列之部分 |
| US20190088196A1 (en) * | 2017-09-21 | 2019-03-21 | Innolux Corporation | Display device |
| TWD191816S (zh) | 2017-12-12 | 2018-07-21 | 新世紀光電股份有限公司 | 發光二極體晶片 |
| USD920934S1 (en) * | 2018-07-27 | 2021-06-01 | Creeled, Inc. | Light emitting diode chip |
| CN112993114A (zh) * | 2019-12-17 | 2021-06-18 | 深圳第三代半导体研究院 | 一种发光二极管 |
| CN112086544A (zh) * | 2020-09-25 | 2020-12-15 | 厦门三安光电有限公司 | 半导体发光元件和发光装置 |
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| US20070096115A1 (en) * | 2005-10-17 | 2007-05-03 | Lee Hyuk M | Nitride-based semiconductor light emitting diode |
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| KR100708934B1 (ko) * | 2005-11-15 | 2007-04-17 | 삼성전기주식회사 | 질화물계 반도체 발광소자 |
| KR100833309B1 (ko) | 2006-04-04 | 2008-05-28 | 삼성전기주식회사 | 질화물계 반도체 발광소자 |
| KR100814464B1 (ko) | 2006-11-24 | 2008-03-17 | 삼성전기주식회사 | 질화물계 반도체 발광소자 |
| KR100833311B1 (ko) | 2007-01-03 | 2008-05-28 | 삼성전기주식회사 | 질화물계 반도체 발광소자 |
| CN101320771A (zh) | 2007-06-04 | 2008-12-10 | 富士迈半导体精密工业（上海）有限公司 | 半导体发光元件 |
| JP4251334B2 (ja) | 2007-08-22 | 2009-04-08 | 日本臓器製薬株式会社 | 包装用容器 |
| TWI376817B (en) | 2007-11-23 | 2012-11-11 | Epistar Corp | Light emitting device, light source apparatus and backlight module |
| TWI394296B (zh) | 2008-09-09 | 2013-04-21 | Bridgelux Inc | 具改良式電極結構之發光元件 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20070096115A1 (en) * | 2005-10-17 | 2007-05-03 | Lee Hyuk M | Nitride-based semiconductor light emitting diode |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20110126435A (ko) | 2011-11-23 |
| TW201214776A (en) | 2012-04-01 |
| US10886436B2 (en) | 2021-01-05 |
| EP2388835A3 (fr) | 2015-04-15 |
| CN102255021A (zh) | 2011-11-23 |
| US20110278634A1 (en) | 2011-11-17 |
| EP2388835B1 (fr) | 2017-03-01 |
| EP2388835A2 (fr) | 2011-11-23 |
| CN102255021B (zh) | 2015-08-26 |
| KR101110937B1 (ko) | 2012-03-05 |
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