TWI455247B - Active device and manufacturing method thereof - Google Patents

Description

Active component and method of manufacturing same

The present invention relates to an active component and a method of fabricating the same, and more particularly to an active component that can be applied to an active-matrix panel and a method of fabricating the same.

In recent years, due to advances in semiconductor process technology, the manufacture of active components has become easier and faster. Active components are used in a wide range of applications, such as computer chips, cell phone chips, or active component displays. Taking an active component display as an example, the active component can be used as a charge or discharge switch.

The conventional active device includes a bottom electrode, an insulating layer covering the bottom electrode, an amorphous germanium layer on the insulating layer, and a doped amorphous germanium layer and a first electrode and a second electrode on the doped amorphous germanium layer. When a bottom electrode voltage is applied to the bottom electrode of the active device, an electron channel is formed in the amorphous germanium layer. On the other hand, the data voltage applied to the first electrode will flow from the electron channel to the second electrode in a current manner, and this current will increase as the voltage of the bottom electrode rises. When the application of voltage to the bottom electrode is stopped, the electron channel in the amorphous germanium layer disappears. In other words, there is an open circuit between the first electrode and the second electrode.

It is worth noting that in order for the active device display to have high reliability and high display quality, the active device needs to have a high through current in the on state and a low leakage current in the on state of the active device. However, the above conventional active components have been unable to meet the current display requirements for high current and low leakage.

The present invention provides an active device and a method of fabricating the same that have a high pass current when the active device is in an open state and a low leakage current when the active device is in an open state.

The invention provides a method for manufacturing an active device, which comprises forming a first bottom electrode and a second bottom electrode on a substrate. A first insulating layer is formed to cover the first bottom electrode and the second bottom electrode. A first channel layer is formed on the first insulating layer above the first bottom electrode and a second channel layer is formed on the first insulating layer above the second bottom electrode. A second insulating layer is formed on the first channel layer and the second channel layer, wherein the second insulating layer exposes a portion of the first channel layer and a portion of the second channel layer. Forming a first conductive pattern over the first channel layer, the first conductive pattern includes a first electrode, a first top electrode, and a second electrode, wherein the first electrode and the second electrode and the exposed first channel layer Electrical connection. Forming a second conductive pattern over the second channel layer, the second conductive pattern includes a third electrode, a second top electrode, and a fourth electrode, wherein the third electrode and the fourth electrode and the exposed second channel layer The electrical connection is electrically connected, and the third electrode is electrically connected to the second electrode.

The invention further provides a method of manufacturing an active device, comprising forming a bottom electrode on a substrate. A first insulating layer is formed to cover the bottom electrode. A channel layer is formed on the first insulating layer above the first bottom electrode. A second insulating layer is formed on the channel layer, wherein the second insulating layer exposes a portion of the channel layer. A conductive pattern is formed over the channel layer, the conductive pattern includes a first electrode, a top electrode, and a second electrode, wherein the first electrode and the second electrode are electrically connected to the exposed channel layer.

The present invention provides an active device comprising a first bottom electrode and a second bottom electrode on a substrate; a first insulating layer covering the first bottom electrode and the second bottom electrode; a first channel layer and a a second channel layer respectively located on the first insulating layer above the first bottom electrode and the second bottom electrode; a second insulating layer on the first channel layer and the second channel layer, and exposing a portion of the first channel a layer and a portion of the second channel layer; a first conductive pattern on the first channel layer, wherein the first conductive pattern includes a first electrode, a first top electrode, and a second electrode, wherein the first electrode and the first The second electrode is electrically connected to the exposed first channel layer; and a second conductive pattern is disposed on the second channel layer, wherein the second conductive pattern comprises a third electrode, a second top electrode and a fourth electrode. The third electrode and the fourth electrode are electrically connected to the exposed second channel layer, and the third electrode is electrically connected to the second electrode.

The invention further provides an active device comprising a bottom electrode on a substrate; a first insulating layer covering the bottom electrode; a channel layer on the first insulating layer above the first bottom electrode; and a second insulating layer a layer on the channel layer, wherein the second insulating layer exposes a portion of the channel layer; and a conductive pattern including a first electrode, a top electrode, and a second electrode, wherein the first electrode and the second electrode are exposed The channel layer is electrically connected.

Based on the above, since the active device of the present invention has a bottom electrode and a top electrode, two electron paths can be formed between the bottom electrode and the channel layer and between the top electrode and the channel layer. Thus, the active device of the present invention has high current and low leakage effects compared to conventional active components.

The above described features and advantages of the present invention will be more apparent from the following description.

1 to 7 are schematic cross-sectional views showing a manufacturing process of a pixel structure having an active device according to an embodiment of the present invention.

Referring to FIG. 1, first, a substrate 100 having an active device region T, a capacitor region C, and a pixel electrode region P is provided. The substrate 100 can be a rigid substrate, a flexible substrate, a transparent substrate, or an opaque substrate. According to an embodiment of the present invention, the buffer layer 102 may be further formed on the surface of the substrate 100, and the material thereof is, for example, tantalum oxide or tantalum nitride, but the present invention is not limited to the above materials. Thereafter, the pixel electrode 104 is formed on the buffer layer 102 in the pixel electrode region P. The pixel electrode 104 can be a transparent electrode layer, a reflective electrode layer or a transflective electrode layer.

Referring to FIG. 2, a bottom electrode 106a and a bottom electrode 106c are formed in the active device region T of the substrate 100. According to an embodiment of the present invention, when the bottom electrode 106a and the bottom electrode 106c are formed, it is further included to form the connection layer 106b on the substrate 100 at the same time. Further, at this time, it is further included that the capacitor lower electrode 106d is formed in the capacitor region C. The method of forming the bottom electrode 106a, the bottom electrode 106bc, the connection layer 106b, and the capacitor lower electrode 106d is achieved, for example, by a deposition process and a lithography and etching process.

Referring to FIG. 3, an insulating layer 108 is formed on the substrate 100 to cover the bottom electrode 106a, the bottom electrode 106c, the connection layer 106b, and the capacitor lower electrode 106d. The material of the insulating layer 108 may be tantalum oxide or tantalum nitride, but the invention is not limited to the above materials. Next, a channel layer 110 and an insulating layer 111 are formed on the insulating layer 108 over the bottom electrode 106a, and a channel layer 112 and an insulating layer 113 are formed on the insulating layer 108 over the bottom electrode 106c. The method of forming the channel layer 110 and the insulating layer 111 and forming the channel layer 112 and the insulating layer 113 is achieved, for example, by a deposition process and a lithography and etching process. According to the present embodiment, the material of the channel layer 110 and the channel layer 112 includes amorphous germanium or microcrystalline germanium, but the invention is not limited to the above materials. The material of the insulating layers 111, 113 may be tantalum oxide or tantalum nitride, but the invention is not limited to the above materials.

Thereafter, the insulating layers 111 and 113 are patterned to form an opening 111a in the insulating layer 111, which exposes a portion of the channel layer 110, and an opening 113a is formed in the insulating layer 113, which exposes a portion of the channel layer 112, as shown in FIG. 4 is shown. In more detail, the patterned insulating layer 111 covers the channel layer 110 above the bottom electrode 106a and exposes the channel layer 110 above both sides of the bottom electrode 106a. Similarly, the patterned insulating layer 113 covers the channel layer 112 above the bottom electrode 106c and exposes the channel layer 112 above both sides of the bottom electrode 106c. The above-described patterning program is, for example, a lithography and etching process.

According to the present embodiment, during the process of patterning the insulating layers 111, 113, the insulating layer 108 may be further patterned to form the contact opening opening C1 and the contact opening C2 in the insulating layer 108, the contact opening opening C1 and the contact window. The opening C2 exposes the connection layer 106b. In addition, in the patterning process, the insulating layer 105 and the insulating layer 108 in the pixel electrode region P may be further patterned to form an opening O that exposes the pixel electrode 104.

Referring to FIG. 5, an ohmic contact layer 116 and a conductive pattern (including a first top electrode 118a, a first electrode 118b, a second electrode 118c, and an upper electrode pattern 118d) are formed on the substrate 100. In particular, the ohmic contact layer 116 underlying the first electrode 118b and the second electrode 118c is electrically connected to the exposed channel layer 112. In addition, the first electrode 118b is further electrically connected to the connection layer 106b through the contact window opening C2. Further, in the capacitor region C, the upper electrode pattern 118d, the capacitor lower electrode 106d, and the insulating layer 108 between the upper electrode pattern 118d and the capacitor lower electrode 106d constitute a storage capacitor, and the upper electrode pattern 118d also has an ohmic contact underneath. Layer 116.

According to the embodiment, the ohmic contact material 116 is doped, for example, with an N-type dopant, which may be an amorphous germanium doped with an N-type dopant, a microcrystalline germanium, a molybdenum molybdenum (MoSi), a chromium telluride (CrSi) or It is titanium telluride (TiSi), but the present invention is not limited to the above materials. The material of the conductive pattern (including the first top electrode 118a, the first electrode 118b, the second electrode 118c, and the capacitor upper electrode 118d) includes a metal such as titanium, aluminum, molybdenum or chromium, but the present invention is not limited to the above materials.

According to the embodiment, the method of forming the ohmic contact layer 116 and the conductive pattern (including the first top electrode 118a, the first electrode 118b, the second electrode 118c, and the upper electrode pattern 118d) is, for example, sequentially forming a layer of conductive material and a layer of ohms. A contact material (not shown) is then patterned simultaneously with the conductive material and the ohmic contact material.

Referring to FIG. 6, an ohmic contact layer 120 and a conductive pattern (including a second top electrode 122a, a third electrode 122b, and a fourth electrode 122c) are formed on the substrate 100. In particular, the ohmic contact layer 120 under the third electrode 122b and the fourth electrode 122c is electrically connected to the exposed channel layer 110. In addition, the fourth electrode 122c is further electrically connected to the connection layer 106b through the contact opening C1. According to the embodiment, the ohmic contact layer 120 is doped with a P-type dopant, for example, an amorphous germanium doped with a P-type dopant, a microcrystalline germanium, a molybdenum molybdenum (MoSi), a chromium telluride (CrSi) or It is titanium telluride (TiSi), but the present invention is not limited to the above materials. The material of the conductive pattern (including the second top electrode 122a, the third electrode 122b, and the fourth electrode 122c) includes a metal such as titanium, aluminum, molybdenum or chromium, but the present invention is not limited to the above materials.

According to the embodiment, the method of forming the ohmic contact layer 120 and the conductive pattern (including the second top electrode 122a, the third electrode 122b, and the fourth electrode 122c) is, for example, sequentially forming a layer of conductive material and an ohmic contact material (not drawn). Show), then simultaneously pattern the conductive material and the ohmic contact material.

In the active device region T of FIG. 6 described above, the top electrode 122a, the third electrode 122b, the fourth electrode 122c, the channel layer 110, and the bottom electrode 106a constitute a first active device (for example, a P-type active device). The top electrode 118a, the first electrode 118b, the second electrode 118c, the channel layer 112, and the bottom electrode 106c constitute a second active device (for example, an N-type active device). In particular, the first electrode 118c of the first active component (for example, a P-type active component) and the first electrode 118b of the second active component (for example, an N-type active component) are electrically connected through the connection layer 106b, thereby forming a Complementary active components. In particular, the first active component (eg, a P-type active component) and the second active component (eg, an N-type active component) of the complementary active device are respectively a two-electrode active component.

After the step of FIG. 6 is completed, a protective layer 124 may be further formed on the structure of FIG. 6, as shown in FIG. 7, to cover the first active component (for example, a P-type active component) in the active device region T. The second active component (eg, an N-type active component) and the capacitor in capacitor region C. In the pixel electrode region P, the protective layer 124 exposes the pixel electrode 104.

The structure of the active device obtained according to the above manufacturing method is as shown in FIG. The active device includes a bottom electrode 106a, a bottom electrode 106c, an insulating layer 108, a channel layer 110, a channel layer 112, an insulating layer 111, 113, an ohmic contact layer 110 and an ohmic contact layer 112, and a conductive pattern (first electrode 118b, top electrode 118a, and The two electrodes 118c) and the conductive patterns (the third electrode 122b, the top electrode 122a, and the fourth electrode 122c).

In the present embodiment, the active element in the active device region T is, for example, a thin film transistor. When the active device is a transistor, the functions of the bottom electrodes 106a, 106c are equivalent to the bottom gate, and the functions of the first electrode 118b and the second electrode 118c are respectively equivalent to the source and the drain or the drain and the source, respectively. The functions of the electrode 122b and the fourth electrode 122c correspond to the source and the drain or the drain and the source, respectively, and the functions of the top electrodes 118a, 122a correspond to the top gate.

The bottom electrode 106a and the bottom electrode 106c are located on the substrate 100. The insulating layer 108 covers the bottom electrode 106a and the bottom electrode 106c. The channel layer 110 and the channel layer 112 are respectively located on the insulating layer 108 above the bottom electrode 106a and the bottom electrode 106c. The ohmic contact layer 116 and the ohmic contact layer 120 are located on the channel layers 110, 112. The conductive patterns (the first electrode 118b, the top electrode 118a, and the second electrode 118c) are located on the ohmic contact layer 116, wherein the ohmic contact layer 116 under the first electrode 118b and the second electrode 118c and the exposed channel layer 112 are electrically connection. The conductive patterns (the third electrode 122b, the top electrode 122a, and the fourth electrode 122c) are located on the ohmic contact layer 120, wherein the ohmic contact layer 120 under the third electrode 122b and the fourth electrode 122c and the exposed channel layer 110 are electrically connection. In addition, the first electrode 118b is electrically connected to the fourth electrode 122c.

According to an embodiment of the invention, the active element further includes a connection layer 106b. The first electrode 118b is electrically connected to the connection layer 106b, and the fourth electrode 122c is electrically connected to the connection layer 106b. In other words, the first electrode 118b and the fourth electrode 122c are electrically connected to each other through the connection layer 106b. Here, the connection layer 106b belongs to the same film layer as the bottom electrode 106a and the bottom electrode 106c. However, the invention is not limited thereto.

In addition, the ohmic contact layer 116 has the same pattern as the conductive patterns (the first electrode 118b, the top electrode 118a, and the second electrode 118c). The ohmic contact layer 120 has the same pattern as the conductive patterns (the third electrode 122b, the top electrode 122a, and the fourth electrode 122c). In the present embodiment, the ohmic contact layer 116 is doped with an N-type dopant, and the ohmic contact layer 120 is doped with a P-type dopant; or the ohmic contact layer 116 is doped with a P-type dopant, and the ohmic contact layer 120 It is doped with an N-type dopant.

Further, in the capacitor region C, the storage capacitor includes a capacitor lower electrode 106d, an upper electrode pattern 118d, and an insulating layer 108 between the upper electrode pattern 118d and the capacitor lower electrode 106d. In the pixel electrode region P, the pixel electrode 104 is located on the substrate 100, and the insulating layers 108, 114 expose the pixel electrode 104.

Figure 8 is a cross-sectional view showing a pixel structure having an active element in accordance with another embodiment of the present invention. The structure of FIG. 8 is similar to that of FIG. 7, and therefore the same components as those of FIG. 7 are denoted by the same reference numerals and will not be described again. The embodiment of FIG. 8 is different from the embodiment of FIG. 7 in that in the pixel electrode region P, the pixel electrode 118e is formed on the insulating layer 108. In the present embodiment, the pixel electrode 118e is defined simultaneously with the conductive pattern (the first electrode 118b, the top electrode 118a, and the second electrode 118c), and thus the ohmic contact layer 116 is also disposed under the pixel electrode 118e.

In summary, since the active device of the present invention has a bottom electrode and a top electrode, two electron channels can be formed between the bottom electrode and the channel layer and between the top electrode and the channel layer. Thus, the active device of the present invention has high current and low leakage effects compared to conventional active components.

In addition, since the top electrode, the first electrode, and the second electrode of the present invention are simultaneously defined, and the top electrode, the first electrode, and the second electrode and the ohmic contact layer under the top electrode, the first electrode, and the second electrode are Defined by the same mask. Therefore, the method of the present invention can save the number of mask processes to reduce manufacturing costs.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.

100. . . Substrate

T. . . Active component area

C. . . Capacitor zone

P. . . Pixel electrode area

102. . . The buffer layer

104. . . Pixel electrode

106a, 106c. . . Bottom electrode

106b. . . Connection layer

106d. . . Capacitor lower electrode

108, 111, 113. . . Insulation

111a, 113a. . . Opening

110, 112. . . Channel layer

116, 120. . . Ohmic contact layer

118b. . . First electrode

122b. . . Third electrode

118a, 122a. . . Top electrode

118c. . . Second electrode

122c‧‧‧fourth electrode

118d‧‧‧Upper electrode pattern

118e‧‧‧ pixel electrodes

124‧‧‧Protective layer

C1, C2‧‧‧ contact window opening

O‧‧‧ openings

1 to 7 are schematic cross-sectional views showing a manufacturing process of a pixel structure having an active device according to an embodiment of the present invention.

Figure 8 is a cross-sectional view showing a pixel structure having an active element in accordance with another embodiment of the present invention.

100. . . Substrate

102. . . The buffer layer

104. . . Pixel electrode

106a, 106c. . . Bottom electrode

106b. . . Connection layer

106d. . . Capacitor lower electrode

108, 111, 113. . . Insulation

110, 112. . . Channel layer

116, 120. . . Ohmic contact layer

118b. . . First electrode

122b. . . Third electrode

118a, 122a. . . Top electrode

118c. . . Second electrode

122c. . . Fourth electrode

118d. . . Upper electrode pattern

124. . . The protective layer

C1, C2. . . Contact window opening

O. . . Opening

Claims (16)

A method for manufacturing an active device, comprising: forming a first bottom electrode and a second bottom electrode on a substrate; forming a first insulating layer covering the first bottom electrode and the second bottom electrode; Forming a first channel layer on the first insulating layer above the bottom electrode and forming a second channel layer on the first insulating layer above the second bottom electrode; at the first channel layer and the second channel layer Forming a second insulating layer, wherein the second insulating layer exposes a portion of the first channel layer and a portion of the second channel layer; forming a first conductive pattern over the first channel layer, the first conductive layer The pattern includes a first electrode, a first top electrode, and a second electrode, wherein the first electrode and the second electrode are electrically connected to the exposed first channel layer; and formed over the second channel layer a second conductive pattern, the second conductive pattern includes a third electrode, a second top electrode, and a fourth electrode, wherein the third electrode and the fourth electrode are electrically connected to the exposed second channel layer And the first electricity And the fourth connection electrode electrically; and forming a connecting layer on the substrate, wherein the first electrode is connected electrically to the connection layer, and the fourth electrode connected electrically to the connection layer. The method of manufacturing an active device according to claim 1, wherein the connecting layer is formed simultaneously with the first bottom electrode and the second bottom electrode. The method of manufacturing an active device according to claim 1, wherein the forming the first conductive pattern over the first channel layer further comprises simultaneously forming a first ohmic contact layer. The method for manufacturing an active device according to claim 3, wherein the method of simultaneously forming the first ohmic contact layer and the first conductive pattern over the first channel layer comprises: sequentially forming a first ohmic contact a material and a first conductive material, wherein the first ohmic contact material is electrically connected to the exposed first channel layer; and the first conductive material and the first ohmic contact material are simultaneously patterned. The method for manufacturing an active device according to claim 1, wherein the forming the second conductive pattern over the second channel layer further comprises simultaneously forming a second ohmic contact layer. The method of manufacturing an active device according to claim 5, wherein the method of simultaneously forming the second ohmic contact layer and the second conductive pattern over the second channel layer comprises: sequentially forming a second ohmic contact a material and a second conductive material, wherein the second ohmic contact material is electrically connected to the exposed second channel layer; and simultaneously patterning the second conductive material and the second ohmic contact material. A method of manufacturing an active device, comprising: forming a bottom electrode on a substrate; Forming a first insulating layer covering the bottom electrode; forming a channel layer on the first insulating layer above the bottom electrode; forming a second insulating layer on the channel layer, wherein the second insulating layer exposes a portion And forming a conductive pattern over the channel layer, the conductive pattern comprising a first electrode, a top electrode and a second electrode, wherein the first electrode and the second electrode and the exposed channel The layer is electrically connected, wherein an electron channel is formed between the bottom electrode and the channel layer and between the top electrode and the channel layer. The method of manufacturing an active device according to claim 7, wherein the forming the conductive pattern over the channel layer further comprises simultaneously forming an ohmic contact layer. The method of manufacturing an active device according to claim 8, wherein the method of simultaneously forming the ohmic contact layer and the conductive pattern over the channel layer comprises: sequentially forming an ohmic contact material and a conductive material, wherein An ohmic contact material is electrically connected to the exposed channel layer; and the conductive material and the ohmic contact material are simultaneously patterned. The method of manufacturing an active device according to claim 7, wherein the ohmic contact layer is doped with an N-type dopant or a P-type dopant. An active component includes: a first bottom electrode and a second bottom electrode on a substrate; a first insulating layer covering the first bottom electrode and the second bottom electrode; a first channel layer and a second channel layer are respectively disposed on the first insulating layer above the first bottom electrode and the second bottom electrode; a second insulating layer is located in the first channel layer and the second layer a first channel layer and a portion of the second channel layer are exposed on the channel layer; a first conductive pattern is located on the first channel layer, wherein the first conductive pattern comprises a first electrode, a first top electrode and a second electrode, wherein the first electrode and the second electrode are electrically connected to the exposed second channel layer; and a second conductive pattern is located on the second channel layer, wherein the first electrode The second conductive pattern includes a third electrode, a second top electrode, and a fourth electrode, wherein the third electrode and the fourth electrode are electrically connected to the exposed second channel layer, and the first electrode and the first electrode The fourth electrode is electrically connected; and a connecting layer, wherein the first electrode is electrically connected to the connecting layer, and the fourth electrode is electrically connected to the connecting layer. The active device of claim 11, wherein the connecting layer is the same film layer as the first bottom electrode and the second bottom electrode. The active device of claim 11, further comprising a first ohmic contact layer on the first channel layer, wherein the first ohmic contact layer has the same pattern as the first conductive pattern. The active device of claim 11, further comprising a second ohmic contact layer on the second channel layer, wherein the second ohmic contact layer and the second conductive pattern have the same pattern. An active component includes: a bottom electrode on a substrate; a first insulating layer covering the bottom electrode; a channel layer on the first insulating layer above the bottom electrode; and a second insulating layer located at a channel layer, wherein the second insulating layer exposes a portion of the channel layer; and a conductive pattern including a first electrode, a top electrode, and a second electrode, wherein the first electrode and the second electrode Electrically connected to the exposed channel layer, wherein an electron channel is formed between the bottom electrode and the channel layer and between the top electrode and the channel layer. The active device of claim 15, further comprising an ohmic contact layer on the channel layer, wherein the ohmic contact layer has the same pattern as the conductive pattern.