CN102468339A - Active element and manufacturing method thereof - Google Patents
Active element and manufacturing method thereof Download PDFInfo
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- CN102468339A CN102468339A CN201010602771XA CN201010602771A CN102468339A CN 102468339 A CN102468339 A CN 102468339A CN 201010602771X A CN201010602771X A CN 201010602771XA CN 201010602771 A CN201010602771 A CN 201010602771A CN 102468339 A CN102468339 A CN 102468339A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 230000004888 barrier function Effects 0.000 claims description 53
- 239000000463 material Substances 0.000 claims description 28
- 239000004020 conductor Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- 238000000059 patterning Methods 0.000 claims description 8
- 230000000694 effects Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 98
- 239000003990 capacitor Substances 0.000 description 17
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 4
- 229910021357 chromium silicide Inorganic materials 0.000 description 4
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000013081 microcrystal Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 1
- 238000011165 process development Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Abstract
The invention discloses an active element and a manufacturing method thereof. The manufacturing method of the active element comprises forming a bottom electrode on a substrate; forming a first insulating layer to cover the bottom electrode; forming a channel layer on the first insulating layer above the bottom electrode; forming a second insulating layer on the channel layer, wherein a part of the channel layer is exposed out of the second insulating layer; and forming a conductive pattern above the channel layer, wherein the conductive pattern comprises a first electrode, a top electrode and a second electrode, and the first electrode and the second electrode are electrically connected with the exposed channel layer. Because the active element of the invention is provided with the bottom electrode and the top electrode, two electronic channels can be formed between the bottom electrode and the channel layer and between the top electrode and the channel layer. Therefore, the active device of the present invention has the effects of high current and low leakage compared with the conventional active device.
Description
Technical field
The invention relates to a kind of active member and manufacturing approach thereof, and particularly relevant for a kind of active member and manufacturing approach thereof that can be applicable to active member panel (active-matrix panel).
Background technology
In recent years, because the semiconductor fabrication process development of technology, the manufacturing of active member gets over easily, quick.Being widely used of active member, for example computer chip, chip for cell phone or active member display etc.With the active member display is example, and active member can be used as the switch of charge or discharge.
The tradition active member comprises hearth electrode, covers the insulating barrier of hearth electrode, is positioned at amorphous silicon layer and the doped amorphous silicon layer on the insulating barrier and is positioned at first electrode and second electrode on the doped amorphous silicon layer.When the hearth electrode of active member applies a positive hearth electrode voltage, can form electron channel in the amorphous silicon layer.On the other hand, put on the data voltage of first electrode, will flow to second electrode by electron channel, and this electric current can and increase along with the rising of hearth electrode voltage with the mode of electric current.When stopping to apply a voltage to hearth electrode, the electron channel in the amorphous silicon layer just can disappear.In other words, be between first electrode and second electrode and open circuit.
It should be noted that in order to make the active member display have high-reliability and high display quality said active member need have the high pass overcurrent and need have low-leakage current in the opening of active member in opening.Yet above-mentioned traditional active member can't satisfy the demand of present display for high electric current and low electric leakage.
Summary of the invention
In view of this, main purpose of the present invention is to provide a kind of active member and manufacturing approach thereof, and it has the high pass overcurrent when the opening of active member, and when the opening of active member, has low-leakage current.
The present invention proposes a kind of manufacturing approach of active member, and it is included in and forms one first hearth electrode and one second hearth electrode on the substrate.Form one first insulating barrier to cover first hearth electrode and this second hearth electrode.Form a first passage layer on first insulating barrier above first hearth electrode and on first insulating barrier above second hearth electrode, forming the second channel layer.On first passage layer and second channel layer, form second insulating barrier, wherein second insulating layer exposing goes out the first passage layer of a part and the second channel layer of a part.Above the first passage layer, form one first conductive pattern, first conductive pattern comprises one first electrode, one first top electrode and one second electrode, and wherein first electrode and second electrode electrically connect with the first passage layer that exposes.Above the second channel layer, form one second conductive pattern; Second conductive pattern comprises a third electrode, one second top electrode and one the 4th electrode; Wherein third electrode and the 4th electrode electrically connect with the second channel layer that exposes, and third electrode and the electric connection of second electrode.
The present invention proposes a kind of manufacturing approach of active member in addition, is included in and forms a hearth electrode on the substrate.Form one first insulating barrier to cover hearth electrode.On first insulating barrier above first hearth electrode, form a channel layer.On channel layer, form one second insulating barrier, wherein second insulating layer exposing goes out the channel layer of a part.Above channel layer, form a conductive pattern, conductive pattern comprises one first electrode, a top electrode and one second electrode, and wherein first electrode and second electrode electrically connect with the channel layer that exposes.
The present invention proposes a kind of active member, and it comprises one first hearth electrode and one second hearth electrode, is positioned on the substrate; One first insulating barrier covers first hearth electrode and second hearth electrode; An one first passage layer and a second channel layer lay respectively on first insulating barrier of first hearth electrode and second hearth electrode top; One second insulating barrier is positioned on first passage layer and the second channel layer, and exposes the first passage layer of a part and the second channel layer of a part; One first conductive pattern is positioned on the first passage layer, and wherein first conductive pattern comprises one first electrode, one first top electrode and one second electrode, and wherein first electrode and second electrode electrically connect with the first passage layer that exposes; And one second conductive pattern; Be positioned on the second channel layer; Wherein second conductive pattern comprises a third electrode, one second top electrode and one the 4th electrode, and wherein third electrode and the 4th electrode electrically connect with the second channel layer that exposes, and third electrode and the electric connection of second electrode.
The present invention proposes a kind of active member in addition, and it comprises a hearth electrode, is positioned on the substrate; One first insulating barrier covers hearth electrode; One channel layer is positioned on first insulating barrier of first hearth electrode top; One second insulating barrier is positioned on the channel layer, and wherein second insulating layer exposing goes out the channel layer of a part; And a conductive pattern, it comprises one first electrode, a top electrode and one second electrode, wherein first electrode and second electrode electrically connect with the channel layer that exposes.
Based on above-mentioned,, therefore can make between hearth electrode and the channel layer and formation twice electron channel between top electrode and channel layer because active member of the present invention has hearth electrode and top electrode.Thereby active member of the present invention has the effect of high electric current and low electric leakage compared to traditional active member.
For letting the above-mentioned feature and advantage of the present invention can be more obviously understandable, hereinafter is special lifts embodiment, and cooperates appended graphic elaborating as follows.
Description of drawings
Fig. 1 to Fig. 7 is the manufacturing process generalized section that has the image element structure of active member according to an embodiment of the invention.
Fig. 8 is the generalized section that has the image element structure of active member according to another embodiment of the present invention.
[main element symbol description]
100: substrate
T: active member district
C: capacitor area
P: pixel electrode district
102: resilient coating
104: pixel electrode
106a, 106c: hearth electrode
106b: articulamentum
106d: capacitor lower electrode
108,111,113: insulating barrier
111a, 113a: opening
110,112: channel layer
116,120: ohmic contact layer
118b: first electrode
122b: third electrode
118a, 122a: top electrode
118c: second electrode
122c: the 4th electrode
118d: top electrode pattern
118e: pixel electrode
124: protective layer
C1, C2: contact window
O: opening
Embodiment
Fig. 1 to Fig. 7 is the manufacturing process generalized section that has the image element structure of active member according to an embodiment of the invention.
Please with reference to Fig. 1, a substrate 100 is provided at first, substrate 100 has active member district T, capacitor area C and pixel electrode district P.Substrate 100 can be hard substrate, flexible base plate, transparency carrier or opaque substrate.According to one embodiment of the invention, can further form resilient coating 102 on the surface of substrate 100, its material for example is silica or silicon nitride, but the invention is not restricted to above-mentioned material.Afterwards, form pixel electrode 104 on the resilient coating 102 in pixel electrode district P.Pixel electrode 104 can be transparent electrode layer, reflection electrode layer or half-penetration half-reflexion type electric utmost point layer.
Please, in the active member district of substrate 100 T, form hearth electrode 106a and hearth electrode 106c with reference to Fig. 2.According to one embodiment of the invention, when forming hearth electrode 106a and hearth electrode 106c, more comprise on substrate 100, forming articulamentum 106b simultaneously.In addition, more be included in formation capacitor lower electrode 106d among the capacitor area C this moment.The method that forms above-mentioned hearth electrode 106a, hearth electrode 106bc, articulamentum 106b and capacitor lower electrode 106d for example is to adopt deposition program and photoetching and etching program to reach.
Please, on substrate 100, form insulating barrier 108, to cover hearth electrode 106a, hearth electrode 106c, articulamentum 106b and capacitor lower electrode 106d with reference to Fig. 3.The material of insulating barrier 108 can be silica or silicon nitride, but the invention is not restricted to above-mentioned material.Then, on the insulating barrier above the hearth electrode 106a 108, form channel layer 110 and insulating barrier 111, and on the insulating barrier 108 of hearth electrode 106c top, form channel layer 112 and insulating barrier 113.The method that forms channel layer 110 and insulating barrier 111 and formation channel layer 112 and insulating barrier 113 for example is to adopt deposition program and photoetching and etching program to reach.According to present embodiment, the material of channel layer 110 and channel layer 112 comprises amorphous silicon or microcrystal silicon, but the invention is not restricted to above-mentioned material.The material of insulating barrier 111,113 can be silica or silicon nitride, but the invention is not restricted to above-mentioned material.
Afterwards, patterned insulation layer 111 and 113, in insulating barrier 111, to form opening 111a, it exposes the channel layer 110 of a part, and in insulating barrier 113, forms opening 113a, and it exposes the channel layer 112 of a part, and is as shown in Figure 4.More detailed, the insulating barrier 111 behind the patterning covers the channel layer 110 that is positioned at hearth electrode 106a top and exposes the channel layer 110 that is positioned at top, hearth electrode 106a both sides.Similarly, the insulating barrier behind the patterning 113 covers the channel layer 112 that is positioned at hearth electrode 106c top and exposes the channel layer 112 that is positioned at top, hearth electrode 106c both sides.Above-mentioned patterning program for example is to adopt photoetching and etching program.
According to present embodiment; Among the process of patterned insulation layer 111,113, further patterned insulation layer 108; In insulating barrier 108, to form contact hole open C 1 and contact window C2, contact hole open C 1 and contact window C2 expose articulamentum 106b.In addition, among said patterning program, also further insulating barrier 105 and the insulating barrier 108 among the patterning pixel electrode district P, to form opening O, it exposes pixel electrode 104.
Please, on substrate 100, form ohmic contact layer 116 and conductive pattern (comprising the first top electrode 118a, the first electrode 118b, the second electrode 118c and top electrode pattern 118d) with reference to Fig. 5.Particularly, be positioned at the ohmic contact layer 116 and the channel layer that is exposed out 112 electric connections of the first electrode 118b and second electrode 118c below.In addition, the first electrode 118b further sees through contact window C2 and electrically connects with articulamentum 106b.In addition; In capacitor area C; Top electrode pattern 118d, capacitor lower electrode 106d and the insulating barrier 108 between top electrode pattern 118d and capacitor lower electrode 106d promptly constitute reservior capacitor, and top electrode pattern 118d beneath also has ohmic contact layer 116.
According to present embodiment, ohmic contact material 116 for example is to be doped with N type admixture, and it can be amorphous silicon, microcrystal silicon, molybdenum silicide (MoSi), chromium silicide (CrSi) or the titanium silicide (TiSi) that is doped with N type admixture, but the invention is not restricted to above-mentioned material.The material of conductive pattern (comprising the first top electrode 118a, the first electrode 118b, the second electrode 118c and electric capacity top electrode 118d) comprises metal, for example is titanium, aluminium, molybdenum or chromium, but the invention is not restricted to above-mentioned material.
According to present embodiment; The method that forms ohmic contact layer 116 and conductive pattern (comprising the first top electrode 118a, the first electrode 118b, the second electrode 118c and top electrode pattern 118d) for example is to form earlier layer of conductive material and one deck ohmic contact material (not illustrating) in regular turn, afterwards while this electric conducting material of patterning and this ohmic contact material.
Please, on substrate 100, form ohmic contact layer 120 and conductive pattern (comprising the second top electrode 122a, third electrode 122b and the 4th electrode 122c) with reference to Fig. 6.Particularly, be positioned at the ohmic contact layer 120 and the channel layer that is exposed out 110 electric connections of third electrode 122b and the 4th electrode 122c below.In addition, the 4th electrode 122c further sees through contact window C1 and electrically connects with articulamentum 106b.According to present embodiment, ohmic contact layer 120 for example is to be doped with P type admixture, and it can be amorphous silicon, microcrystal silicon, molybdenum silicide (MoSi), chromium silicide (CrSi) or the titanium silicide (TiSi) that is doped with P type admixture, but the invention is not restricted to above-mentioned material.The material of conductive pattern (comprising the second top electrode 122a, third electrode 122b and the 4th electrode 122c) comprises metal, for example is titanium, aluminium, molybdenum or chromium, but the invention is not restricted to above-mentioned material.
According to present embodiment; The method that forms ohmic contact layer 120 and conductive pattern (comprising the second top electrode 122a, third electrode 122b and the 4th electrode 122c) for example is to form earlier layer of conductive material and one deck ohmic contact material (not illustrating) in regular turn, afterwards while this electric conducting material of patterning and this ohmic contact material.
In the active member district of above-mentioned Fig. 6 T, top electrode 122a, third electrode 122b, the 4th electrode 122c, channel layer 110 and hearth electrode 106a constitute first active member (for example being P type active member).Top electrode 118a, the first electrode 118b, the second electrode 118c, channel layer 112 and hearth electrode 106c constitute second active member (for example being N type active member).Particularly, the first electrode 118b of the 4th electrode 122c of first active member (for example being P type active member) and second active member (for example being N type active member) sees through articulamentum 106b and electrically connects, thereby constitutes a complementary active member.Particularly, first active member of above-mentioned complementary active member (for example being P type active member) is respectively a bipolar electrode active member with second active member (for example being N type active member).
After the step of accomplishing above-mentioned Fig. 6; Can further on the structure of Fig. 6, form a protective layer 124; As shown in Figure 7, with first active member (for example being P type active member) among the covering active member district T and the capacitor among second active member (for example being N type active member) and the capacitor area C.And in pixel electrode district P, protective layer 124 is to expose pixel electrode 104.
The resulting active member structure of manufacturing approach according to above-mentioned is as shown in Figure 7.Active member comprises hearth electrode 106a, hearth electrode 106c, insulating barrier 108, channel layer 110, channel layer 112, insulating barrier 111,113, ohmic contact layer 110 and ohmic contact layer 112, conductive pattern (the first electrode 118b, top electrode 118a and the second electrode 118c) and conductive pattern (third electrode 122b, top electrode 122a and the 4th electrode 122c).
In the present embodiment, being arranged in active member district T active member for example is thin-film transistor.When active member is transistor; Hearth electrode 106a; The function of 106c is equivalent to bottom-gate, and the function of the first electrode 118b and the second electrode 118c is equivalent to source electrode and drain electrode or drain electrode and source electrode respectively, and the function of third electrode 122b and the 4th electrode 122c is equivalent to source electrode and drain electrode or drain electrode and source electrode respectively; And top electrode 118a, the function of 122a is equivalent to the top grid.
According to one embodiment of the invention, above-mentioned active member more comprises articulamentum 106b.The first electrode 118b and articulamentum 106b electrically connect, and the 4th electrode 122c and articulamentum 106b electric connection.In other words, the first electrode 118b and the 4th electrode 122c electrically connect through articulamentum 106b.At this, articulamentum 106b belongs to same rete with hearth electrode 106a and hearth electrode 106c.So, the invention is not restricted to this.
In addition, ohmic contact layer 116 has identical pattern with conductive pattern (the first electrode 118b, top electrode 118a and the second electrode 118c).Ohmic contact layer 120 has identical pattern with conductive pattern (third electrode 122b, top electrode 122a and the 4th electrode 122c).In the present embodiment, ohmic contact layer 116 is doped with N type admixture, and ohmic contact layer 120 is doped with P type admixture; Or ohmic contact layer 116 is doped with P type admixture, and ohmic contact layer 120 is doped with N type admixture.
In addition, in capacitor area C, reservior capacitor comprises capacitor lower electrode 106d, top electrode pattern 118d and the insulating barrier 108 between top electrode pattern 118d and capacitor lower electrode 106d.In pixel electrode district P, pixel electrode 104 is positioned on the substrate 100, and insulating barrier 108,114 exposes pixel electrode 104.
Fig. 8 is the generalized section that has the image element structure of active member according to another embodiment of the present invention.The structure of Fig. 8 is similar with Fig. 7, therefore this with Fig. 7 components identical with identical symbolic representation, and no longer repeat to give unnecessary details.The embodiment difference of the embodiment of Fig. 8 and Fig. 7 is that pixel electrode 118e is formed on the insulating barrier 108 in pixel electrode district P.In the present embodiment, pixel electrode 118e defines with conductive pattern (the first electrode 118b, top electrode 118a and the second electrode 118c) simultaneously, so also there is ohmic contact layer 116 below of pixel electrode 118e.
In sum, because active member of the present invention has hearth electrode and top electrode, therefore can make between hearth electrode and the channel layer and formation twice electron channel between top electrode and channel layer.Thereby active member of the present invention has the effect of high electric current and low electric leakage compared to traditional active member.
In addition, because of top electrode of the present invention, first electrode and second electrode are to define simultaneously, and top electrode, first electrode and second electrode are to define with mask with the ohmic contact layer that is positioned at top electrode, first electrode and second electrode below.Therefore, method of the present invention can be saved the number of mask process, to reduce manufacturing cost.
Though the present invention discloses as above with embodiment; Right its is not in order to limit the present invention; Has common knowledge the knowledgeable in the technical field under any; Do not breaking away from the spirit and scope of the present invention, when can doing a little change and retouching, so protection scope of the present invention is when looking being as the criterion that the claim scope of enclosing defined.
Claims (18)
1. the manufacturing approach of an active member is characterized in that, comprising:
On a substrate, form one first hearth electrode and one second hearth electrode;
Form one first insulating barrier, cover this first hearth electrode and this second hearth electrode;
Form a first passage layer on this first insulating barrier above this first hearth electrode and on this first insulating barrier above this second hearth electrode, forming a second channel layer;
On this first passage layer and this second channel layer, form one second insulating barrier, wherein this second insulating layer exposing goes out this first passage layer of a part and this second channel layer of a part;
Above this first passage layer, form one first conductive pattern, this first conductive pattern comprises one first electrode, one first top electrode and one second electrode, and wherein this first electrode and this second electrode electrically connect with this first passage layer that exposes; And
Above this second channel layer, form one second conductive pattern; This second conductive pattern comprises a third electrode, one second top electrode and one the 4th electrode; Wherein this third electrode and the 4th electrode electrically connect with this second channel layer that exposes, and this first electrode and the electric connection of the 4th electrode.
2. the manufacturing approach of active member according to claim 1 is characterized in that, more is included in to form an articulamentum on this substrate, and wherein this first electrode and this articulamentum electrically connect, and the 4th electrode and the electric connection of this articulamentum.
3. the manufacturing approach of active member according to claim 2 is characterized in that, this articulamentum is to form simultaneously with this first hearth electrode and this second hearth electrode.
4. the manufacturing approach of active member according to claim 1 is characterized in that, more comprises when above this first passage layer, forming this first conductive pattern forming one first ohmic contact layer simultaneously.
5. the manufacturing approach of active member according to claim 4 is characterized in that, the method that above this first passage layer, forms this first ohmic contact layer and this first conductive pattern simultaneously comprises:
Form one first ohmic contact material and one first electric conducting material in regular turn, it is characterized in that, this first ohmic contact material electrically connects with this first passage layer that exposes; And
While this first electric conducting material of patterning and this first ohmic contact material.
6. the manufacturing approach of active member according to claim 1 is characterized in that, more comprises when above this second channel layer, forming this second conductive pattern forming one second ohmic contact layer simultaneously.
7. the manufacturing approach of active member according to claim 6 is characterized in that, the method that above this second channel layer, forms this second ohmic contact layer and this second conductive pattern simultaneously comprises:
Form one second ohmic contact material and one second electric conducting material in regular turn, it is characterized in that, this second ohmic contact material electrically connects with this second channel layer that exposes; And
While this second electric conducting material of patterning and this second ohmic contact material.
8. the manufacturing approach of an active member is characterized in that, comprising:
On a substrate, form a hearth electrode;
Form one first insulating barrier, cover this hearth electrode;
On this first insulating barrier above this first hearth electrode, form a channel layer;
On this channel layer, form one second insulating barrier, wherein this second insulating layer exposing goes out this channel layer of a part; And
Above this channel layer, form a conductive pattern, this conductive pattern comprises one first electrode, a top electrode and one second electrode, and wherein this first electrode and this second electrode electrically connect with this channel layer that exposes.
9. the manufacturing approach of active member according to claim 8 is characterized in that, more comprises when above this channel layer, forming this conductive pattern forming an ohmic contact layer simultaneously.
10. the manufacturing approach of active member according to claim 9 is characterized in that, the method that above this channel layer, forms this ohmic contact layer and this conductive pattern simultaneously comprises:
Form an ohmic contact material and an electric conducting material in regular turn, wherein this ohmic contact material electrically connects with this channel layer that exposes; And
While this electric conducting material of patterning and this ohmic contact material.
11. the manufacturing approach of active member according to claim 8 is characterized in that, this ohmic contact layer is doped with N type admixture or P type admixture.
12. an active member is characterized in that, comprising:
One first hearth electrode and one second hearth electrode are positioned on the substrate;
One first insulating barrier covers this first hearth electrode and this second hearth electrode;
An one first passage layer and a second channel layer lay respectively on this first insulating barrier of this first hearth electrode and this second hearth electrode top;
One second insulating barrier is positioned on this first passage layer and this second channel layer, and exposes this first passage layer of a part and this second channel layer of a part;
One first conductive pattern is positioned on this first passage layer, and wherein this first conductive pattern comprises one first electrode, one first top electrode and one second electrode, and wherein this first electrode and this second electrode electrically connect with this second channel layer that exposes; And
One second conductive pattern; Be positioned on this second channel layer; Wherein this second conductive pattern comprises a third electrode, one second top electrode and one the 4th electrode; Wherein this third electrode and the 4th electrode electrically connect with this second channel layer that exposes, and this first electrode and the electric connection of the 4th electrode.
13. active member according to claim 12 is characterized in that, more comprises an articulamentum, wherein this first electrode and this articulamentum electrically connect, and the 4th electrode and the electric connection of this articulamentum.
14. active member according to claim 13 is characterized in that, this articulamentum is to belong to same rete with this first hearth electrode and this second hearth electrode.
15. active member according to claim 12 is characterized in that, more comprises one first ohmic contact layer, is positioned on this first passage layer, wherein this first ohmic contact layer has identical pattern with this first conductive pattern.
16. active member according to claim 12 is characterized in that, more comprises one second ohmic contact layer, is positioned on this second channel layer, wherein this second ohmic contact layer has identical pattern with this second conductive pattern.
17. an active member is characterized in that, comprising:
One hearth electrode is positioned on the substrate;
One first insulating barrier covers this hearth electrode;
One channel layer is positioned on this first insulating barrier of this first hearth electrode top;
One second insulating barrier is positioned on this channel layer, and wherein this second insulating layer exposing goes out this channel layer of a part; And
One conductive pattern, it comprises one first electrode, a top electrode and one second electrode, wherein this first electrode and this second electrode electrically connect with this channel layer that exposes.
18. active member according to claim 17 is characterized in that, more comprises an ohmic contact layer, is positioned on this channel layer, wherein this ohmic contact layer has identical pattern with this conductive pattern.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW099137493A TWI455247B (en) | 2010-11-01 | 2010-11-01 | Active device and manufacturing method thereof |
| TW99137493 | 2010-11-01 |
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| CN102468339A true CN102468339A (en) | 2012-05-23 |
| CN102468339B CN102468339B (en) | 2014-01-22 |
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| TWI648844B (en) * | 2017-11-06 | 2019-01-21 | Industrial Technology Research Institute | Thin film transistor and method of manufacturing same |
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| CN1619392A (en) * | 2003-11-11 | 2005-05-25 | Lg.菲利浦Lcd株式会社 | Liquid crystal display device including polycrystalline silicon thin film transistor and method of fabricating the same |
| CN1734787A (en) * | 2004-08-13 | 2006-02-15 | 三星Sdi株式会社 | Thin film transistor and method of fabricating the same |
| KR20090002009A (en) * | 2007-05-31 | 2009-01-09 | 최재봉 | Language training contents providing system |
| US20090294808A1 (en) * | 2008-06-03 | 2009-12-03 | Toppan Printing Co., Ltd | Thin Film Transistor, Method for Manufacturing the Same and Film Formation Apparatus |
Also Published As
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| CN102468339B (en) | 2014-01-22 |
| TW201220432A (en) | 2012-05-16 |
| TWI455247B (en) | 2014-10-01 |
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