CN102468339B - Active element and manufacturing method thereof - Google Patents
Active element and manufacturing method thereof Download PDFInfo
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- CN102468339B CN102468339B CN201010602771.XA CN201010602771A CN102468339B CN 102468339 B CN102468339 B CN 102468339B CN 201010602771 A CN201010602771 A CN 201010602771A CN 102468339 B CN102468339 B CN 102468339B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 230000004888 barrier function Effects 0.000 claims description 53
- 239000000463 material Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 28
- 239000004020 conductor Substances 0.000 claims description 10
- 238000000059 patterning Methods 0.000 claims description 8
- 230000000694 effects Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 98
- 239000003990 capacitor Substances 0.000 description 17
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 4
- 229910021357 chromium silicide Inorganic materials 0.000 description 4
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000013081 microcrystal Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Abstract
The invention discloses an active element and a manufacturing method thereof. The manufacturing method of the active element comprises forming a bottom electrode on a substrate; forming a first insulating layer to cover the bottom electrode; forming a channel layer on the first insulating layer above the bottom electrode; forming a second insulating layer on the channel layer, wherein a part of the channel layer is exposed out of the second insulating layer; and forming a conductive pattern above the channel layer, wherein the conductive pattern comprises a first electrode, a top electrode and a second electrode, and the first electrode and the second electrode are electrically connected with the exposed channel layer. Because the active element of the invention is provided with the bottom electrode and the top electrode, two electronic channels can be formed between the bottom electrode and the channel layer and between the top electrode and the channel layer. Therefore, the active device of the present invention has the effects of high current and low leakage compared with the conventional active device.
Description
Technical field
The invention relates to a kind of active member and manufacture method thereof, and particularly relevant for a kind of active member and manufacture method thereof that can be applicable to active member panel (active-matrix panel).
Background technology
In recent years, due to the progress of semiconductor fabrication process technology, the manufacture of active member gets over easily, fast.Being widely used of active member, such as computer chip, chip for cell phone or active member display etc.Take active member display as example, and active member can be used as the switch of charge or discharge.
Tradition active member comprises hearth electrode, covers the insulating barrier of hearth electrode, is positioned at amorphous silicon layer and the doped amorphous silicon layer on insulating barrier and is positioned at the first electrode and the second electrode on doped amorphous silicon layer.When the hearth electrode of active member applies a positive hearth electrode voltage, in amorphous silicon layer, can form electron channel.On the other hand, put on the data voltage of the first electrode, the mode with electric current is flow to the second electrode by electron channel, and this electric current can rise and increase along with hearth electrode voltage.When stopping applying a voltage to hearth electrode, the electron channel in amorphous silicon layer just can disappear.In other words, between the first electrode and the second electrode, be and open circuit.
It should be noted that in order to make active member display have high-reliability and high display quality, described active member need have high pass overcurrent and need have low-leakage current in the opening of active member in opening.Yet above-mentioned traditional active member cannot meet current display for the demand of high electric current and low electric leakage.
Summary of the invention
In view of this, main purpose of the present invention is to provide a kind of active member and manufacture method thereof, has high pass overcurrent during its opening in active member, and has low-leakage current when the opening of active member.
The present invention proposes a kind of manufacture method of active member, and it is included in and on a substrate, forms one first hearth electrode and one second hearth electrode.Form one first insulating barrier to cover the first hearth electrode and this second hearth electrode.On the first insulating barrier above the first hearth electrode, form a first passage layer and form second channel layer on the first insulating barrier above the second hearth electrode.On first passage layer and second channel layer, form the second insulating barrier, wherein the second insulating layer exposing goes out the second channel layer of a part of first passage layer and a part.Above first passage layer, form one first conductive pattern, the first conductive pattern comprises one first electrode, one first top electrode and one second electrode, and wherein the first electrode and the second electrode are electrically connected with the first passage layer exposing.Above second channel layer, form one second conductive pattern, the second conductive pattern comprises a third electrode, one second top electrode and one the 4th electrode, wherein third electrode and the 4th electrode are electrically connected with the second channel layer exposing, and third electrode and the electric connection of the second electrode.
The another manufacture method that proposes a kind of active member of the present invention, is included in and on a substrate, forms a hearth electrode.Form one first insulating barrier to cover hearth electrode.On the first insulating barrier above the first hearth electrode, form a channel layer.On channel layer, form one second insulating barrier, wherein the second insulating layer exposing goes out a part of channel layer.Above channel layer, form a conductive pattern, conductive pattern comprises one first electrode, a top electrode and one second electrode, and wherein the first electrode and the second electrode are electrically connected with the channel layer exposing.
The present invention proposes a kind of active member, and it comprises one first hearth electrode and one second hearth electrode, is positioned on a substrate; One first insulating barrier, covers the first hearth electrode and the second hearth electrode; One first passage layer and a second channel layer, lay respectively on the first insulating barrier of the first hearth electrode and the second hearth electrode top; One second insulating barrier, is positioned on first passage layer and second channel layer, and exposes the second channel layer of a part of first passage layer and a part; One first conductive pattern, is positioned on first passage layer, and wherein the first conductive pattern comprises one first electrode, one first top electrode and one second electrode, and wherein the first electrode and the second electrode are electrically connected with the first passage layer exposing; And one second conductive pattern, be positioned on second channel layer, wherein the second conductive pattern comprises a third electrode, one second top electrode and one the 4th electrode, and wherein third electrode and the 4th electrode are electrically connected with the second channel layer exposing, and third electrode and the electric connection of the second electrode.
A kind of active member of the another proposition of the present invention, it comprises a hearth electrode, is positioned on a substrate; One first insulating barrier, covers hearth electrode; One channel layer, is positioned on the first insulating barrier of the first hearth electrode top; One second insulating barrier, is positioned on channel layer, and wherein the second insulating layer exposing goes out a part of channel layer; And a conductive pattern, it comprises one first electrode, a top electrode and one second electrode, wherein the first electrode and the second electrode are electrically connected with the channel layer exposing.
Based on above-mentioned, because active member of the present invention has hearth electrode and top electrode, therefore can make to form twice electron channel between hearth electrode and channel layer and between top electrode and channel layer.Thereby active member of the present invention has the effect of high electric current and low electric leakage compared to traditional active member.
For above-mentioned feature and advantage of the present invention can be become apparent, special embodiment below, and coordinate appended graphic being described in detail below.
Accompanying drawing explanation
Fig. 1 to Fig. 7 is the manufacturing process generalized section according to an embodiment of the invention with the image element structure of active member.
Fig. 8 is the generalized section according to another embodiment of the present invention with the image element structure of active member.
[main element symbol description]
100: substrate
T: active member district
C: capacitor area
P: pixel electrode district
102: resilient coating
104: pixel electrode
106a, 106c: hearth electrode
106b: articulamentum
106d: capacitor lower electrode
108,111,113: insulating barrier
111a, 113a: opening
110,112: channel layer
116,120: ohmic contact layer
118b: the first electrode
122b: third electrode
118a, 122a: top electrode
118c: the second electrode
122c: the 4th electrode
118d: top electrode pattern
118e: pixel electrode
124: protective layer
C1, C2: contact window
O: opening
Embodiment
Fig. 1 to Fig. 7 is the manufacturing process generalized section according to an embodiment of the invention with the image element structure of active member.
Please refer to Fig. 1, first a substrate 100 is provided, substrate 100 has active member district T, capacitor area C and pixel electrode district P.Substrate 100 can be hard substrate, flexible base plate, transparency carrier or opaque substrate.According to one embodiment of the invention, on the surface of substrate 100, can further form resilient coating 102, its material is for example silica or silicon nitride, but the invention is not restricted to above-mentioned material.On resilient coating 102 in ， pixel electrode district P, form pixel electrode 104 afterwards.Pixel electrode 104 can be transparent electrode layer, reflection electrode layer or half-penetration half-reflexion type electric utmost point layer.
Please refer to Fig. 2, in the active member district of substrate 100 T, form hearth electrode 106a and hearth electrode 106c.According to one embodiment of the invention, when forming hearth electrode 106a and hearth electrode 106c, more comprise and on substrate 100, form articulamentum 106b simultaneously.In addition, be now more included in and in the C of capacitor area, form capacitor lower electrode 106d.The method that forms above-mentioned hearth electrode 106a, hearth electrode 106bc, articulamentum 106b and capacitor lower electrode 106d is for example to adopt deposition program and photoetching and etching program to reach.
Please refer to Fig. 3, on substrate 100, form insulating barrier 108, to cover hearth electrode 106a, hearth electrode 106c, articulamentum 106b and capacitor lower electrode 106d.The material of insulating barrier 108 can be silica or silicon nitride, but the invention is not restricted to above-mentioned material.Then, on the insulating barrier 108 above hearth electrode 106a, form channel layer 110 and insulating barrier 111, and form channel layer 112 and insulating barrier 113 on the insulating barrier 108 of hearth electrode 106c top.Forming channel layer 110 is for example to adopt deposition program and photoetching and etching program to reach with insulating barrier 111 and formation channel layer 112 with the method for insulating barrier 113.According to the present embodiment, the material of channel layer 110 and channel layer 112 comprises amorphous silicon or microcrystal silicon, but the invention is not restricted to above-mentioned material.The material of insulating barrier 111,113 can be silica or silicon nitride, but the invention is not restricted to above-mentioned material.
Afterwards, patterned insulation layer 111 and 113, to form opening 111a in insulating barrier 111, it exposes a part of channel layer 110, and forms opening 113a in insulating barrier 113, and it exposes a part of channel layer 112, as shown in Figure 4.In more detail, the insulating barrier after patterning 111 covers and is positioned at the channel layer 110 of hearth electrode 106a top and exposes the channel layer 110 that is positioned at top, hearth electrode 106a both sides.Similarly, the insulating barrier after patterning 113 covers and is positioned at the channel layer 112 of hearth electrode 106c top and exposes the channel layer 112 that is positioned at top, hearth electrode 106c both sides.Above-mentioned patterning program is for example to adopt photoetching and etching program.
According to the present embodiment, among the process of patterned insulation layer 111,113, further patterned insulation layer 108, to form contact hole open C 1 and contact window C2 in insulating barrier 108, contact hole open C 1 and contact window C2 expose articulamentum 106b.In addition, among described patterning program, also further insulating barrier 105 and the insulating barrier 108 in patterning pixel electrode district P, to form opening O, it exposes pixel electrode 104.
Please refer to Fig. 5, on substrate 100, form ohmic contact layer 116 and conductive pattern (comprising the first top electrode 118a, the first electrode 118b, the second electrode 118c and top electrode pattern 118d).Particularly, be positioned at the ohmic contact layer 116 of the first electrode 118b and the second electrode 118c below and channel layer 112 electric connections that are exposed out.In addition, the first electrode 118b further sees through contact window C2 and is electrically connected with articulamentum 106b.In addition, in the C of capacitor area, top electrode pattern 118d, capacitor lower electrode 106d and the insulating barrier 108 between top electrode pattern 118d and capacitor lower electrode 106d form reservior capacitor, and top electrode pattern 118d beneath also has ohmic contact layer 116.
According to the present embodiment, ohmic contact material 116 is for example doped with N-type admixture, it can be doped with the amorphous silicon of N-type admixture, microcrystal silicon, molybdenum silicide (MoSi), chromium silicide (CrSi) or titanium silicide (TiSi), but the invention is not restricted to above-mentioned material.The material of conductive pattern (comprising the first top electrode 118a, the first electrode 118b, the second electrode 118c and electric capacity top electrode 118d) comprises metal, for example, be titanium, aluminium, molybdenum or chromium, but the invention is not restricted to above-mentioned material.
According to the present embodiment, the method that forms ohmic contact layer 116 and conductive pattern (comprising the first top electrode 118a, the first electrode 118b, the second electrode 118c and top electrode pattern 118d) is for example first sequentially to form layer of conductive material and one deck ohmic contact material (not illustrating), afterwards while this electric conducting material of patterning and this ohmic contact material.
Please refer to Fig. 6, on substrate 100, form ohmic contact layer 120 and conductive pattern (comprising the second top electrode 122a, third electrode 122b and the 4th electrode 122c).Particularly, be positioned at the ohmic contact layer 120 of third electrode 122b and the 4th electrode 122c below and channel layer 110 electric connections that are exposed out.In addition, the 4th electrode 122c further sees through contact window C1 and is electrically connected with articulamentum 106b.According to the present embodiment, ohmic contact layer 120 is for example doped with P type admixture, it can be doped with the amorphous silicon of P type admixture, microcrystal silicon, molybdenum silicide (MoSi), chromium silicide (CrSi) or titanium silicide (TiSi), but the invention is not restricted to above-mentioned material.The material of conductive pattern (comprising the second top electrode 122a, third electrode 122b and the 4th electrode 122c) comprises metal, for example, be titanium, aluminium, molybdenum or chromium, but the invention is not restricted to above-mentioned material.
According to the present embodiment, the method that forms ohmic contact layer 120 and conductive pattern (comprising the second top electrode 122a, third electrode 122b and the 4th electrode 122c) is for example first sequentially to form layer of conductive material and one deck ohmic contact material (not illustrating), afterwards while this electric conducting material of patterning and this ohmic contact material.
In the active member district of above-mentioned Fig. 6 T, top electrode 122a, third electrode 122b, the 4th electrode 122c, channel layer 110 and hearth electrode 106a form the first active member (being for example P type active member).Top electrode 118a, the first electrode 118b, the second electrode 118c, channel layer 112 and hearth electrode 106c form the second active member (being for example N-type active member).Particularly, the 4th electrode 122c of the first active member (being for example P type active member) and the first electrode 118b of the second active member (being for example N-type active member) see through articulamentum 106b and are electrically connected, thereby form a complementary active member.Particularly, the first active member of above-mentioned complementary active member (being for example P type active member) for example, is respectively a bipolar electrode active member with the second active member (being N-type active member).
After completing the step of above-mentioned Fig. 6; can further in the structure of Fig. 6, form a protective layer 124; as shown in Figure 7, for example, for example, to cover the capacitor in the first active member (being P type active member) in active member district T and the second active member (being N-type active member) and capacitor area C.In Er pixel electrode district P, protective layer 124 is to expose pixel electrode 104.
According to the resulting active member structure of above-mentioned manufacture method as shown in Figure 7.Active member comprises hearth electrode 106a, hearth electrode 106c, insulating barrier 108, channel layer 110, channel layer 112, insulating barrier 111,113, ohmic contact layer 110 and ohmic contact layer 112, conductive pattern (the first electrode 118b, top electrode 118a and the second electrode 118c) and conductive pattern (third electrode 122b, top electrode 122a and the 4th electrode 122c).
In the present embodiment, being arranged in active member district T active member is for example thin-film transistor.When active member is transistor, hearth electrode 106a, the function of 106c is equivalent to bottom-gate, the function of the first electrode 118b and the second electrode 118c is equivalent to respectively source electrode and drain electrode or drain electrode and source electrode, the function of third electrode 122b and the 4th electrode 122c is equivalent to respectively source electrode and drain electrode or drain electrode and source electrode, and top electrode 118a, the function of 122a is equivalent to top grid.
According to one embodiment of the invention, above-mentioned active member more comprises articulamentum 106b.The first electrode 118b and articulamentum 106b are electrically connected, and the 4th electrode 122c and articulamentum 106b electric connection.In other words, the first electrode 118b and the 4th electrode 122c are electrically connected through articulamentum 106b.At this, articulamentum 106b belongs to same rete with hearth electrode 106a and hearth electrode 106c.So, the invention is not restricted to this.
In addition, ohmic contact layer 116 has identical pattern with conductive pattern (the first electrode 118b, top electrode 118a and the second electrode 118c).Ohmic contact layer 120 has identical pattern with conductive pattern (third electrode 122b, top electrode 122a and the 4th electrode 122c).In the present embodiment, ohmic contact layer 116 is doped with N-type admixture, and ohmic contact layer 120 is doped with P type admixture; Or ohmic contact layer 116 is doped with P type admixture, and ohmic contact layer 120 is doped with N-type admixture.
In addition,, in the C of capacitor area, reservior capacitor comprises capacitor lower electrode 106d, top electrode pattern 118d and the insulating barrier 108 between top electrode pattern 118d and capacitor lower electrode 106d.In pixel electrode district P, pixel electrode 104 is positioned on substrate 100, and insulating barrier 108,114 exposes pixel electrode 104.
Fig. 8 is the generalized section according to another embodiment of the present invention with the image element structure of active member.The structure of Fig. 8 is similar to Fig. 7, therefore at this element identical with Fig. 7, with identical symbol, represent, and it is no longer repeated.The embodiment difference of the embodiment of Fig. 8 and Fig. 7 is that pixel electrode 118e is formed on insulating barrier 108 in pixel electrode district P.In the present embodiment, pixel electrode 118e defines with conductive pattern (the first electrode 118b, top electrode 118a and the second electrode 118c) simultaneously, so also there is ohmic contact layer 116 below of pixel electrode 118e.
In sum, because active member of the present invention has hearth electrode and top electrode, therefore can make to form twice electron channel between hearth electrode and channel layer and between top electrode and channel layer.Thereby active member of the present invention has the effect of high electric current and low electric leakage compared to traditional active member.
In addition, because top electrode of the present invention, the first electrode and the second electrode are to define simultaneously, and top electrode, the first electrode and the second electrode are to define with mask with the ohmic contact layer that is positioned at top electrode, the first electrode and the second electrode below.Therefore, method of the present invention can be saved the number of mask process, to reduce manufacturing cost.
Although the present invention discloses as above with embodiment; so it is not in order to limit the present invention; under any, in technical field, have and conventionally know the knowledgeable; without departing from the spirit and scope of the present invention; when doing a little change and retouching, therefore protection scope of the present invention is when being as the criterion of defining depending on the claim scope of enclosing.
Claims (16)
1. a manufacture method for active member, is characterized in that, comprising:
On a substrate, form one first hearth electrode and one second hearth electrode;
Form one first insulating barrier, cover this first hearth electrode and this second hearth electrode;
On this first insulating barrier above this first hearth electrode, form a first passage layer and form a second channel layer on this first insulating barrier above this second hearth electrode;
On this first passage layer and this second channel layer, form one second insulating barrier, wherein this second insulating layer exposing goes out this first passage layer of a part and this second channel layer of a part;
Above this first passage layer, form one first conductive pattern, this first conductive pattern comprises one first electrode, one first top electrode and one second electrode, and wherein this first electrode and this second electrode are electrically connected with this first passage layer exposing;
Above this second channel layer, form one second conductive pattern, this second conductive pattern comprises a third electrode, one second top electrode and one the 4th electrode, and wherein this third electrode and the 4th electrode are electrically connected with this second channel layer exposing; And
On this substrate, form an articulamentum, wherein this first electrode and this articulamentum are electrically connected, and the 4th electrode and this articulamentum are electrically connected, and this first electrode and the 4th electrode are electrically connected.
2. the manufacture method of active member according to claim 1, is characterized in that, this articulamentum is to form with this first hearth electrode and this second hearth electrode simultaneously.
3. the manufacture method of active member according to claim 1, is characterized in that, while forming this first conductive pattern above this first passage layer, more comprises and forms one first ohmic contact layer simultaneously.
4. the manufacture method of active member according to claim 3, is characterized in that, the method that simultaneously forms this first ohmic contact layer and this first conductive pattern above this first passage layer comprises:
Sequentially form one first ohmic contact material and one first electric conducting material, it is characterized in that, this first ohmic contact material is electrically connected with this first passage layer exposing; And
While this first electric conducting material of patterning and this first ohmic contact material.
5. the manufacture method of active member according to claim 1, is characterized in that, while forming this second conductive pattern above this second channel layer, more comprises and forms one second ohmic contact layer simultaneously.
6. the manufacture method of active member according to claim 5, is characterized in that, the method that simultaneously forms this second ohmic contact layer and this second conductive pattern above this second channel layer comprises:
Sequentially form one second ohmic contact material and one second electric conducting material, it is characterized in that, this second ohmic contact material is electrically connected with this second channel layer exposing; And
While this second electric conducting material of patterning and this second ohmic contact material.
7. a manufacture method for active member, is characterized in that, comprising:
On a substrate, form a hearth electrode;
Form one first insulating barrier, cover this hearth electrode;
On this first insulating barrier above this hearth electrode, form a channel layer;
On this channel layer, form one second insulating barrier, wherein this second insulating layer exposing goes out this channel layer of a part; And
Above this channel layer, form a conductive pattern, this conductive pattern comprises one first electrode, a top electrode and one second electrode, and wherein this first electrode and this second electrode are electrically connected with this channel layer exposing;
Wherein, between this hearth electrode and this channel layer and between this top electrode and this channel layer, forming respectively an electron channel.
8. the manufacture method of active member according to claim 7, is characterized in that, more comprises and form an ohmic contact layer simultaneously while forming this conductive pattern above this channel layer.
9. the manufacture method of active member according to claim 8, is characterized in that, the method that simultaneously forms this ohmic contact layer and this conductive pattern above this channel layer comprises:
Sequentially form an ohmic contact material and an electric conducting material, wherein this ohmic contact material is electrically connected with this channel layer exposing; And
While this electric conducting material of patterning and this ohmic contact material.
10. the manufacture method of active member according to claim 7, is characterized in that, this ohmic contact layer is doped with N-type admixture or P type admixture.
11. 1 kinds of active members, is characterized in that, comprising:
One first hearth electrode and one second hearth electrode, be positioned on a substrate;
One first insulating barrier, covers this first hearth electrode and this second hearth electrode;
One first passage layer and a second channel layer, lay respectively on this first insulating barrier of this first hearth electrode and this second hearth electrode top;
One second insulating barrier, is positioned on this first passage layer and this second channel layer, and exposes this first passage layer of a part and this second channel layer of a part;
One first conductive pattern, is positioned on this first passage layer, and wherein this first conductive pattern comprises one first electrode, one first top electrode and one second electrode, and wherein this first electrode and this second electrode are electrically connected with this second channel layer exposing;
One second conductive pattern, is positioned on this second channel layer, and wherein this second conductive pattern comprises a third electrode, one second top electrode and one the 4th electrode, and wherein this third electrode and the 4th electrode are electrically connected with this second channel layer exposing; And
One articulamentum, wherein this first electrode and this articulamentum are electrically connected, and the 4th electrode and this articulamentum are electrically connected, and this first electrode and the 4th electrode are electrically connected.
12. active members according to claim 11, is characterized in that, this articulamentum is to belong to same rete with this first hearth electrode and this second hearth electrode.
13. active members according to claim 11, is characterized in that, more comprise one first ohmic contact layer, are positioned on this first passage layer, and wherein this first ohmic contact layer has identical pattern with this first conductive pattern.
14. active members according to claim 11, is characterized in that, more comprise one second ohmic contact layer, are positioned on this second channel layer, and wherein this second ohmic contact layer has identical pattern with this second conductive pattern.
15. 1 kinds of active members, is characterized in that, comprising:
One hearth electrode, is positioned on a substrate;
One first insulating barrier, covers this hearth electrode;
One channel layer, is positioned on this first insulating barrier of this first hearth electrode top;
One second insulating barrier, is positioned on this channel layer, and wherein this second insulating layer exposing goes out this channel layer of a part; And
One conductive pattern, it comprises one first electrode, a top electrode and one second electrode, wherein this first electrode and this second electrode are electrically connected with this channel layer exposing;
Wherein, between this hearth electrode and this channel layer and between this top electrode and this channel layer, forming respectively an electron channel.
16. active members according to claim 15, is characterized in that, more comprise an ohmic contact layer, are positioned on this channel layer, and wherein this ohmic contact layer has identical pattern with this conductive pattern.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW099137493A TWI455247B (en) | 2010-11-01 | 2010-11-01 | Active device and manufacturing method thereof |
| TW99137493 | 2010-11-01 |
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| CN102468339A CN102468339A (en) | 2012-05-23 |
| CN102468339B true CN102468339B (en) | 2014-01-22 |
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| TWI648844B (en) * | 2017-11-06 | 2019-01-21 | Industrial Technology Research Institute | Thin film transistor and method of manufacturing same |
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| CN1619392A (en) * | 2003-11-11 | 2005-05-25 | Lg.菲利浦Lcd株式会社 | Liquid crystal display device including polycrystalline silicon thin film transistor and method of fabricating the same |
| CN1734787A (en) * | 2004-08-13 | 2006-02-15 | 三星Sdi株式会社 | Thin film transistor and method of fabricating the same |
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| US6982194B2 (en) * | 2001-03-27 | 2006-01-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| TWI302032B (en) * | 2005-06-17 | 2008-10-11 | Univ Nat Sun Yat Sen | Thin film transistor and method of fabricating thereof |
| KR100944755B1 (en) * | 2007-05-31 | 2010-03-03 | 최재봉 | Language training contents providing system and the media |
| US7732265B2 (en) * | 2008-06-03 | 2010-06-08 | Toppan Printing Co., Ltd. | Thin film transistor, method for manufacturing the same and film formation apparatus |
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- 2010-11-01 TW TW099137493A patent/TWI455247B/en active
- 2010-12-21 CN CN201010602771.XA patent/CN102468339B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1619392A (en) * | 2003-11-11 | 2005-05-25 | Lg.菲利浦Lcd株式会社 | Liquid crystal display device including polycrystalline silicon thin film transistor and method of fabricating the same |
| CN1734787A (en) * | 2004-08-13 | 2006-02-15 | 三星Sdi株式会社 | Thin film transistor and method of fabricating the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102468339A (en) | 2012-05-23 |
| TW201220432A (en) | 2012-05-16 |
| TWI455247B (en) | 2014-10-01 |
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