TWI450029B - 金屬嵌入光罩及其製造方法 - Google Patents

金屬嵌入光罩及其製造方法 Download PDF

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Publication number
TWI450029B
TWI450029B TW101134458A TW101134458A TWI450029B TW I450029 B TWI450029 B TW I450029B TW 101134458 A TW101134458 A TW 101134458A TW 101134458 A TW101134458 A TW 101134458A TW I450029 B TWI450029 B TW I450029B
Authority
TW
Taiwan
Prior art keywords
metal
substrate
reticle
manufacturing
embedded
Prior art date
Application number
TW101134458A
Other languages
English (en)
Chinese (zh)
Other versions
TW201413371A (zh
Inventor
Yung Chun Lee
Cho Wei Chang
Yi Ta Hsieh
Jhih Nan Yan
Original Assignee
Univ Nat Cheng Kung
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Nat Cheng Kung filed Critical Univ Nat Cheng Kung
Priority to TW101134458A priority Critical patent/TWI450029B/zh
Priority to KR1020130109543A priority patent/KR101505317B1/ko
Priority to CN201310415053.5A priority patent/CN103676467B/zh
Publication of TW201413371A publication Critical patent/TW201413371A/zh
Application granted granted Critical
Publication of TWI450029B publication Critical patent/TWI450029B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G03F1/64—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material, including bonding means therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
TW101134458A 2012-09-20 2012-09-20 金屬嵌入光罩及其製造方法 TWI450029B (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW101134458A TWI450029B (zh) 2012-09-20 2012-09-20 金屬嵌入光罩及其製造方法
KR1020130109543A KR101505317B1 (ko) 2012-09-20 2013-09-12 금속-임베디드 포토마스크 및 그 제조 방법
CN201310415053.5A CN103676467B (zh) 2012-09-20 2013-09-12 金属嵌入光罩及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW101134458A TWI450029B (zh) 2012-09-20 2012-09-20 金屬嵌入光罩及其製造方法

Publications (2)

Publication Number Publication Date
TW201413371A TW201413371A (zh) 2014-04-01
TWI450029B true TWI450029B (zh) 2014-08-21

Family

ID=50314470

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101134458A TWI450029B (zh) 2012-09-20 2012-09-20 金屬嵌入光罩及其製造方法

Country Status (3)

Country Link
KR (1) KR101505317B1 (ko)
CN (1) CN103676467B (ko)
TW (1) TWI450029B (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105576097A (zh) * 2016-02-26 2016-05-11 海迪科（南通）光电科技有限公司 一种纳米软膜光刻制备微纳pss的方法
CN105609607A (zh) * 2016-02-26 2016-05-25 海迪科（南通）光电科技有限公司 一种微纳pss制备用软膜结构
CN105742414A (zh) * 2016-02-26 2016-07-06 海迪科（南通）光电科技有限公司 一种微纳pss制备用软膜及其制造方法
CN109445243A (zh) * 2018-12-21 2019-03-08 苏州瑞而美光电科技有限公司 一种光刻掩膜版及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201208974A (en) * 2010-08-23 2012-03-01 Univ Nat Cheng Kung Manufacturing method of micro/nano-particle and micro/nano-particle unit
US20120217621A1 (en) * 2011-01-19 2012-08-30 International Business Machines Corporation Structure and method for hard mask removal on an soi substrate without using cmp process

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69500268T2 (de) * 1994-02-14 1997-10-30 Ibm Dämpfende Phasenverschiebungsmaske und Herstellungsverfahren
JPH10333318A (ja) * 1997-06-03 1998-12-18 Dainippon Printing Co Ltd 位相シフトフォトマスク及びその製造方法
KR20060079957A (ko) * 2005-01-04 2006-07-07 삼성에스디아이 주식회사 포토리소그래피용 연질 포토마스크, 그 제조방법, 이를채용한 패턴 형성 방법
CN101382715A (zh) * 2008-10-20 2009-03-11 友达光电股份有限公司 像素结构、显示面板、光电装置的制造方法
CN101598894B (zh) * 2009-07-07 2011-07-27 友达光电股份有限公司 光掩膜、薄膜晶体管元件及制作薄膜晶体管元件的方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201208974A (en) * 2010-08-23 2012-03-01 Univ Nat Cheng Kung Manufacturing method of micro/nano-particle and micro/nano-particle unit
US20120217621A1 (en) * 2011-01-19 2012-08-30 International Business Machines Corporation Structure and method for hard mask removal on an soi substrate without using cmp process

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Jhih-Nan Yan and Yung-Chun Lee, Fabrication of metal embedded photo-mask for sub-micrometer scaled photolithography and patterning sapphire substrate, NEMS 2012, Kyoto, JAPAN, March 5-8,2012 *

Also Published As

Publication number Publication date
CN103676467B (zh) 2019-05-21
KR20140038309A (ko) 2014-03-28
CN103676467A (zh) 2014-03-26
KR101505317B1 (ko) 2015-03-23
TW201413371A (zh) 2014-04-01

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