TWI447605B - 半導體製程之失效偵測方法及執行此方法之系統架構 - Google Patents

半導體製程之失效偵測方法及執行此方法之系統架構 Download PDF

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TWI447605B
TWI447605B TW100121808A TW100121808A TWI447605B TW I447605 B TWI447605 B TW I447605B TW 100121808 A TW100121808 A TW 100121808A TW 100121808 A TW100121808 A TW 100121808A TW I447605 B TWI447605 B TW I447605B
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parameter
relationship
parameters
failure detection
failure
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TW201301074A (zh
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Yij Chieh Chu
Yun Zong Tian
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Inotera Memories Inc
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    • G—PHYSICS
    • G16—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR SPECIFIC APPLICATION FIELDS
    • G16Z—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR SPECIFIC APPLICATION FIELDS, NOT OTHERWISE PROVIDED FOR
    • G16Z99/00—Subject matter not provided for in other main groups of this subclass
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B19/00—Programme-control systems
    • G05B19/02—Programme-control systems electric
    • G05B19/418—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS], computer integrated manufacturing [CIM]
    • G05B19/4184—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS], computer integrated manufacturing [CIM] characterised by fault tolerance, reliability of production system
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/001—Industrial image inspection using an image reference approach
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
    • Y02P90/02—Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS]

Claims (10)

  1. 一種半導體製程之失效偵測方法，其由一用以執行所述半導體製程之失效偵測方法之系統架構所執行，所述半導體製程之失效偵測方法，包括下列步驟：提供至少一機台儲存資料庫；由該機台儲存資料庫收集多數個失效偵測參數；設立多數個具有以量測多筆線上量測參數的量測站點；收集該些失效偵測參數相對應之多數個晶圓允收度參數；建立上述失效偵測參數與上述線上量測參數的第一關係式；藉由上述第一關係式建立上述線上量測參數與上述晶圓允收度參數的第二關係式；建立上述失效偵測參數與上述晶圓允收度參數的第三關係式；藉由上述第一關係式、第二關係式及第三關係式建立一偵測製程缺陷的警示區；及利用上述警示區用以判斷半導體製程產生缺陷的情形。
  2. 如申請專利範圍第1項所述之半導體製程之失效偵測方法，其中進一步包含計算該些線上量測參數，得到多數個標準化之線上量測參數之步驟，該些標準化之線上量測參數之數學式為： 其中，Inlinei 為第i個線上量測參數、為該些線上量測參數的平均數、SInline 為該些線上量測參數的標準差除以開根號之樣本數、及Inlinei '為第i個標準化的線上量測參數，其中進一步包含計算該些失效偵測參數，得到多數個標準化之失效偵測參數之步驟，該些標準化之失效偵測參數之數學式為： 其中，FDCj 為第j個失效偵測參數、為該些失效偵測參數的平均數、SFDC 為該些失效偵測參數的標準差除以開根號之樣本數、及FDCj '為第j個標準化的失效偵測參數，其中上述失效偵測參數與上述線上量測參數的第一關係式為： 其中，β2 為該些標準化的線上量測參數與失效偵測參數的第一連結係數。
  3. 如申請專利範圍第2項所述之半導體製程之失效偵測方法，其中進一步包含下列步驟：計算標準化之β2 ，並且推算出一統計檢定式為： 其中，為第一連結係數的標準差除以開根號之樣本數、t* 為與第一連結係數之檢定統計量、及θ為與第一連結係數之夾角。
  4. 如申請專利範圍第3項所述之半導體製程之失效偵測方法，其中進一步包含下列步驟：推導上述統計檢定式的複數轉換為： Z =cot(θ)其中，Z為統計檢定式經複數轉換得到之複數值，進一步界定判斷式為：當Z>0時，cot-1 (Z )<θ，當Z<0時，cot-1 (Z )>θ。
  5. 如申請專利範圍第4項所述之半導體製程之失效偵測方法，其中進一步包含下列步驟：建立上述線上量測參數與上述晶圓允收度參數之間的製程錯誤發生機率之第二關係式為：π1 (w )=P {WAT out spec. |Inline '}logit (π1 (w ))=α1 +β1Inline' 其中，w 為該些晶圓允收度參數超過標準的次數、π1 (w )為該些晶圓允收度參數超過標準的機率、P {WAT out spec. |Inline '}為該些線上量測參數相對應之該些標準化之晶圓允收度參數的機率、及α1 與β1 為曲線趨近函數之二係數。
  6. 如申請專利範圍第5項所述之半導體製程之失效偵測方法，其中進一步包含下列步驟：建立上述失效偵測參數與上述晶圓允收度參數之間的製程錯誤發生機率之第三關係式為：π2 (w )=P {WAT out spec. |FDC '}logit (π2 (w ))=α+βFDC' 其中，w 為該些晶圓允收度參數超過標準的次數、π2 (w )為該些晶圓允收度參數超過標準的機率、P {WAT out spec. |FDC '}為該些失效偵測參數相對應之該些標準化之晶圓允收度參數的機率、及α與β為曲線趨近函數之二係數。
  7. 如申請專利範圍第6項所述之半導體製程之失效偵測方法，其中進一步包含下列步驟：推導上述失效偵測參數與上述晶圓允收度參數之間的製程錯誤發生機率之第三關係式為： 其中，eβ 為β計算後之指數函數、x 為計算後之變數。
  8. 如申請專利範圍第7項所述之半導體製程之失效偵測方法，其中進一步包含下列步驟：由上述線上量測參數與上述晶圓允收度參數之間的製程錯誤發生機率之第二關係式，以及推導上述失效偵測參數與上述晶圓允收度參數之間的製程錯誤發生機率之第三關係式進一步界定關係為： 其中，A 為計算後之第一數值，B 為計算後之第二數值，當β1 >0時，推導出上述第一數值及上述第二數值分別為： 當β1 <0時，推導出上述第一數值及上述第二數值分別為： 藉由上述第一數值與上述第二數值之關係，進一步定義出上述第一數值及上述第二數值之最小值C為：C=min{| A |, | B |}。
  9. 如申請專利範圍第8項所述之半導體製程之失效偵測方法，其中進一步包含下列步驟：藉由上述統計檢定式、上述第一數值及上述第二數值建立上述警示區的判斷式為：cot-1 (-Z )>θ或θ<cot-1 (Z )以及A >β2 或β2 >B ， 藉此，利用上述警示區的判斷式來判斷製程中是否有缺陷產生。
  10. 一種用以執行半導體製程的失效偵測方法之系統架構，包括：至少一儲存裝置，其具有儲存多個失效參數、線上量測參數及晶圓允收度參數的機台儲存資料庫，上述失效參數與上述線上量測參數建立形成一第一資料群組，上述晶圓允收度參數建立形成一第二資料群組；一自動化資料分析設備，其具有一群組分析單元、一缺陷定位單元、一風險評估單元、一範圍建立單元及一風險判斷單元，該第一資料群組資料連結於該群組分析單元，該群組分析單元分別資料連結該缺陷定位單元及該風險評估單元，該第二資料群組資料連結於該風險評估單元，該風險評估單元資料連結於該範圍建立單元，該缺陷定位單元與該範圍建立單元分別資料連結於該風險判斷單元，其中該第一資料群組用以提供上述失效偵測參數及上述線上量測參數，從而建立上述失效偵測參數與上述線上量測參數之間的第一關係式；該第二資料群組用以提供上述晶圓允收度參數，並經由上述第一關係式以建立上述線上量測參數與上述晶圓允收度參數之間的第二關係式；該第一資料群組及該第二資料群組分別用以提供上述失效偵測參數及上述晶圓允收度參數，從而經由上述第二關係式建立第三關係式；其中上述第一關係式、第二關係式及第三關係式用以於該自動化資料分析設備中建立一偵測製程缺陷的警示區；及一影像顯示裝置，其中該風險判斷單元資料連結於該 影像顯示裝置，用以將製程缺陷結果對照於該警示區並顯示於該影像顯示裝置上，從而用以判斷半導體製程產生缺陷的情形。
TW100121808A 2011-06-22 2011-06-22 半導體製程之失效偵測方法及執行此方法之系統架構 TWI447605B (zh)

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US13/240,348 US8756028B2 (en) 2011-06-22 2011-09-22 Fault detection method of semiconductor manufacturing processes and system architecture thereof

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