TW200410349A - Method for analyzing wafer test parameters - Google Patents

Abstract

A method for analyzing wafer test parameters, which is utilized for analyzing a plurality of lots of products. Each of the lots has a lot number, and each wafer of these lots has been tested according to at least a wafer test item. Moreover, the wafer test item, the correlations between wafer test item, a sample test item, an in-line QC item, and manufacturing machine item are stored in a database. The method includes the following steps: Dividing the lots into two or more than two groups, including a high yield group and a low yield group, based on the yields of the lots; Generating a first standard value according to the wafer test parameters of the high yield group; Comparing the low yield group with the first standard value so as to delete the lot number of the lot that has wafer test parameters equal to or better than the first standard value; Determining the residual amount of lot numbers in the low yield group is zero or not; When the residual amount isn't zero, searching the database to find out the sample test item, the in-line QC item, or the manufacturing machine item corresponding to the wafer test item; and When the amount is zero, terminating the searching action.

Description

200410349 V. Description of the invention (1) (1), [Technical field to which the invention belongs] This invention relates to a method for analyzing process parameters and wafer test parameters. (II) [Previous technology] In manufacturing technology, 'to be completed-semiconductor products usually go through j, that is, semiconducting: such as lithography process, etching process, ion implantation rolling table, and many complicated in'r to huge Number of machines

To ensure the normal operation of the machine, we are committed to the problems, machine maintenance, etc., and cumulative inspection " > temple operation, in order to make the production speed and quality of semiconductor products meet customer needs.

& ^ Two generals 'To discuss the problem of semiconductor manufacturing process, we can analyze it from the following items of data, including process parameter data, In line QC > materials' defect inspection (defect inspection), Sample test (samp and e test) data, wafer test (wafer test) data, and post-package test (final test) data. The wafer test data is a test value obtained by performing a feature refresh test, a function test (funct), and a power supply current test (IDDQ test) on the wafer. In the conventional technology, Please refer to FIG. 1. First, step 101 is performed. At this time, a skilled technician will perform a test of each wafer test item such as a characteristic test, a function test, and a power supply current test for each wafer. In Step 1 02, a skilled technician will observe the

Page 7 200410349 V. Description of the invention (2) Results of various wafer test items in order to find products with discrepant wafer test results; as shown in FIG. 2, a plurality of crystals will be cut in a wafer 2 Lattice, which includes a plurality of defective lattices 2 1 (shown as 0 in black) and a plurality of qualified lattices 22 (shown in white). Figure 2g Table 7F Distribution. Step 103 is based on the experience of a skilled technician and the wafer test parameter value distribution chart of the abnormal product selected from the step to list the process stations that can be problematic, such as lithography, etching, and σ%. Cheng et al. _ In the implantation system Finally, in step 104, the skilled technician checks each machine in the process station broken in step 103 to find out the abnormal machine. Fortunately, according to the distribution diagram shown in FIG. 2, a skilled person can judge that the process station type is a problem in the formation process of a certain metal layer, so search for the process station for this metal layer and check out Anomalous f is the accumulation machine, etc. σ 'Ru Shen however' Since in the conventional technology, human experience is used to determine the score and pray for the result (step 103), the final analysis of the surname to determine the degree and credibility will be open to question; plus The semiconductor generation and the frequent convergence of results have led to the transmission of experience between engineers in the early and late stages. People in the county even cry that engineers have limited capabilities and cannot take into account the causes of the plant. When the test results of semiconductor products are abnormal, the working state is sufficient. Experience quickly and correctly determine which one is two :: Seeing something and doing it must take a lot of time to carry out related research, and even the question 'due to misjudgment' is so-come, not only reduce the efficiency of the process: can do '' Increase Health

200410349 V. Description of the invention (3) Production cost, also benefit # ,,,, and, therefore, the analysis method when the material is abnormal, (3), [Invention is based on which crystal of the conductor product is the crystal of the present invention The reason for the circle test project is that the method is used to divide the wafer test test items encountered in several machines and their test items, one by one in the material library, and to timely change the production situation on the abu σ a α σ line to improve the quality. rate. He Ting provided a kind of wafer test materials that can be used to deduct semiconductors from your semiconductors. You can determine which one is the problem. Putian Yin, one of the important topics of conductor manufacturing technology. Content] The characteristics of the problem described in the test data of this circle are obtained by analyzing multiple batches with good correlation and other purposes to achieve the above purpose, and the test parameter values of each item are tested by online σσ quality. This method includes the production of multiple batches. The purpose of the invention is to record a product process item with a high wafer test rate when an abnormality occurs. According to the present invention, a fast and positive analysis method is provided for the control group and the wafer test recorded in the database has a batch of products. Each wafer in the product to generate a wafer test parameter value can be determined with certainty. The parametric analysis is based on at least the yield ratio of the Gauguin beef product group and the low yield ratio of the high-yield-two analysis method. Low-yield production and the wafer test items and the following several steps are divided into product groups; the standard value of each batch of products; the batch of test items related to each batch of round test items of the product group of each batch Stored in the step: The second product group, including the wafer test parameter value, delete the wafer test parameter value and the batch number of the product, etc.

Page 9 200410349

Flute 1Π2004200410349 V. Description of the invention (5) When judging the low-yield product group: Analytical action; and when judging the low-yield, perform the following steps: search for various electrical test values of the crystal lattice; test the crystal lattice Is the target lattice layout; the target crystal map of each wafer is superimposed; the overlap is defined as a target wafer; the number is greater than a third standard value, and the search is consistent with the wafer test item As described above, because the product with a high yield rate is the control group and other process items are recorded in the database station of the process, furthermore, fewer human error judgments are found to improve the remaining batch rate product group in a timely manner to improve the online production situation. Brother yields low-yield wafers, and obtains grid patterns and ratios greater than those of a batch of samples that will yield low-yield products. The measured wafers will be tested with each crystal, so that the machine can work abnormally. The efficiency of the Taiwan manufacturing process will improve the yield of Nanan. When the number is zero, the number of remaining batches will not be one for each wafer in the group. It does not meet one of the various electrical test wafers. The target lattice is divided into wafers and the second standard group is selected. The test parameter circle test is correct enough, so reduce the inclusion of the test parameter standard value; and judge from the phase analysis of the project by the or process analysis that the production value distribution wafers can be targeted for the wafer database station. The legal system is effective in reducing costs, and (IV), [Implementation] The following is a description of the parameter analysis method with reference to Figure 5 below. According to the invention, according to the present invention, the perch technique ^ i ^ ^ The same components of the τ of the Jiaguan embodiment 旰 the same U is referred to Please refer to FIG. 3 to FIG. 5 ′. This embodiment uses wafer testing ^ one of the preferred embodiments, and is expected to find the problem machine. The results are divided into 200410349. 5. Description of the invention (6) As shown in FIG. 3, first, in step 3101, the method for analyzing the wafer test parameters according to the preferred embodiment of the present invention is to search for the goodness of several batches of products. Rate, and then step 302 is to set a number of batches of products with a yield greater than or equal to a preset value (such as 70%) as Group A (high-yield product group) products, for example, including batch numbers 1, 2, 3, 4, and 5 (As shown in step 3 〇3), and set several batches of products with a yield lower than a preset value (such as 70%) as Group B (low-yield product group) products. , 8, 9, and 10 (as shown in step 304). Among them, each batch of product has a batch number (10 tumber), and each batch of products includes a wafer wafer, and each batch of products is a plurality of machines through a plurality of teasing processes. As for a wafer test item, for example, item A 'is a multi-channel electrical test on each lattice (d 丨 e) of each wafer, and the electrical test parameter values of each lattice are obtained. For each type of electrical test item, there is a regulatory standard (conntro1 spec). When the electrical test parameter value of a crystal lattice meets the regulatory standard, it is considered to pass this electrical test item; 'When a crystal lattice does not comply with the regulatory standard, it cannot pass this electrical test item', and here At this stage, the wafer test item 3A of this lattice is not qualified (faU). Therefore, after all the grids of a wafer pass through the electrical test process included in wafer test item A, we can obtain the wafer test parameter distribution chart for this wafer, as shown in Figure 2. In addition, a person skilled in the art can divide the number of qualified lattices of wafer test item A of the wafer by the total number of lattices to obtain a value, which is called the crystal a ^ wafer test parameter value. The wafer test parameter value of a batch of products (One 10t) is the average of the wafer test parameter values of the total number of wafers it contains

200410349

The yield of a batch of products is the representative value of the pros and cons of the products obtained after various tests including round test items, online quality test items, and sample test items. 4 Please refer to step 30 5 in Fig. 3. First, a statistical analysis will be performed on the wafer test data of Group A products' to find the representative wafer test parameter value KA in Group A products. Next, referring to step 3Q6, in Group B products, using Ka as the standard, delete the value of wafer test parameter equal to or better than the & value from Group B products, and filter in this low-yield product group. Drop the batch number of the product that passed the wafer test item A (that is, the wafer test parameter value is better than Ka). Step 307 determines whether the number of batches remaining in Group B is zero. If it is zero, the analysis operation is stopped. If the number of batches is not zero, then connect to Figure 4. What needs to be explained here is that when the number of batches is not zero, it means that the products of these batches of correction products have a low yield rate and may be tested with their wafers. Item 1 failed. ^ Figure 4 step i, when the result of Figure 3 shows the aforementioned products in group b. When the remaining low-yield products are relevant to the wafer test project, they must search the available information from an experience accumulation database for information. According to ^ a ^ T ^ Π ^, Will judge based on his experience: * What is the possible reason when test item A is unqualified on the 3rd? First, the answer may be: "Should go to the oven to pick up the sample test item of 〇τ forced trace sample samp le test ) One of the projects, ten σ ws 々 Ganjia s or should be related to the tracking of online process stations. "1 Therefore, once this is judged, which two secretarial accumulation database is a senior engineer

Page 13 200410349 V. Description of Invention (8) The engineer inputs his experience into this system to provide a computer to automatically determine the direction of the longitudinal path. Of course, this experience accumulation database can also be updated by the computer, and the experience gained in the follow-up process can be obtained from this experience accumulation database. In step 402, when the experience accumulation database shows that the wafer test is related to a sample test item, step 403 is performed to: similarly, perform the statistical analysis action t to obtain its representative sample test parameters Value (may be an average value of 3-6 after the step fork 404 is marked with ~ value, the 6 groups of products after the step < 3 06 remaining remaining ^ ^ digging force 丨 ″ ~ / evaluation The batch number is deleted. After the bran, the result of the cattle test is equal to or better than ^ Α value: S: If it is tv step 405 to determine whether the remaining product batch number is a grid, you should search for the item in the shellfish library when the sample is tested If the project is out of range (step 40 8) If the experience accumulation database shows that a material warehouse should be tracked, the display should track one, then connect to the process in Figure 5. If the experience accumulation resource is connected to step 410. Online quality inspection project (Step 407), even after referring to the product database of step 409, it displays "No". This step is the result of the search experience in step 4 1 which is accumulated in step 4 1 0. The test item A and Statistical analysis of online quality inspection projects Product online quality test data, Xuan (may be an average value to find its representative online quality test parameter standards, fine group B products), ^. Then, in step 411, the value ~ is the test data. Equal to or equal to 4 The online quality of the product remaining after step 3 0 6 4 —The product lot number of A is deleted after that. Then in step 4 1 2

200410349 V. In the description of the invention (9), ′ judge whether the batch number of the remaining product is zero. If it is zero, stop the analysis. If it is not zero, go to step 4 1 3 to search from the experience accumulation database. When the online quality test result is not in compliance, which process station should be tracked (step 4 1 4), and then connected to the stream of Figure 5 ^. Refer to step 41.5. This step is after searching the accumulated experience database in step 401. 'If the wafer test item A is unqualified, the item to be pursued is a process station. At this time, it is connected to the process of FIG. 5 for follow-up. step.

Please refer to FIG. 5. In step 501, it first searches which machines are included in the tracked process station type, such as E 1, E 2, E 3 ···. Next, in step 502 of the Nose B group products, after the deletion of step 306, step 404, or step 411, the probability that the product with the remaining product lot number passes through the machines of this process station. In addition, step 503 calculates the probability that the products of Group A will pass through the machines of this process station. Then, in step 504, the common analysis method is used to find the product with the highest probability of passing the remaining product batch number of group B products after the deletion of step 3 06, step 4 04, or step 4 11 station. The machine with the lowest probability of passing the remaining product lot numbers of these Group B products obtained in step 504 is the machine that may have a problem that is analyzed according to the wafer test parameter analysis method of the preferred embodiment of the present invention.

In addition, please refer to FIG. 6 to FIG. 10, which show a flowchart of a method for analyzing a wafer test parameter according to a second preferred embodiment of the present invention. It can be seen from FIG. 6 that the process from step 601 to step 〇7 is the same as that of FIG. 3, so it will not be repeated, and if step 〇7 determines that the number of batches remaining in group B is not When zero, connect to Figure 7. This second preferred embodiment is a method for analyzing another wafer test item, such as wafer test item B.

Page 15 200410349 V. Description of Invention (ίο) Refer to FIG. 7. Step 7 0 1 searches for the remaining batch number of products in Group B after the deletion of step 6 〇β to obtain each of the batches of products searched. Multiple electrical test results for each lattice on a wafer. In this embodiment, some electrical test items are tested on a level-by-level basis, so the electrical test parameter values for each level can be obtained. Next, in step 702, the lattice that does not meet the test specifications is defined as the target lattice n aπ, and the target lattice distribution of each wafer is obtained as shown in FIG. 8, as shown in FIG. 8, where the target lattice 8 1 is represented by n aπ, and the other lattices 8 2 are represented by white. For poultry watchers, because there are multiple electrical test items and multiple layers, each wafer will have multiple target lattice distribution maps. In other words, each layer of each wafer will have a corresponding target lattice distribution map. Next, in step 703, the target lattice distribution map of each wafer (as shown in FIG. 8) and the wafer test parameter value distribution map (as shown in FIG. 2) are superimposed. Refer to step 704, which is to determine whether the overlap ratio of the target lattice distribution map of each wafer and the wafer test parameter value distribution map is greater than a preset value, such as 30%. If not, then this wafer is not marked (step 705): If 疋, then this wafer is marked as the target wafer, ζ I, (step 706). Following step '7 7', it is determined whether the number of target wafers included in each batch is greater than or equal to a certain percentage of the total number of wafers, such as 50% or more. If not, go to step 7 08 to delete the product lot number; if yes, keep the product lot number (step 709), and then proceed to the process of connecting to FIG. 9. Referring to step 9 in FIG. 9, the method for analyzing wafer test parameters according to the second preferred embodiment of the present invention is to search for wafers from the experience accumulation database.

Page 16 200410349

V. Description of the invention (11) Relevant test item B is also 〇4, when this experience accumulates capital, project or process station type.纟 When the test item in step 902 is related, then: U displays the sample test data of wafer test item B and-sample test, leaving ζ, 9G3 /, and step 903 will search for group A production such as the average value ~. Next, the statistical analysis is performed in this paper to find a representative value. For example, the products of Group B are processed through the step 704; Germany ^ 9 04, and the average value of 卩 is used as the standard. If the value is equal to or better than the value of ^: Counterfeit product test results of the product number of the warranty / nm ^ ^ ^ ® qn4 Production σ〇 The batch number is deleted. Then, in step 905, it is judged that the deletion action has passed through step 904 :. If it is zero, m stops the analysis; if not, it is 906, so that you can learn from the experience of the ancestor of Shenzu Temple; Order step A is searched in the jade database, which is related to this sample test item: process station type .When the experience accumulation database shows that this sample test item Pan 1 = the process station type is related (step 7), then the connection is made to the process shown in Figure 10. ^ In addition, as shown in step 90 9 when After searching the accumulated experience database after step 901, when it is shown that the wafer test item B is related to a process station, 'the connection is performed to the process shown in FIG. 10.' Please refer to FIG. 10 for the analysis process (step s 〇 丨 ~ s 〇4) are the same as the steps 骒 50 and 504 in Fig. 5, so they will not be repeated here. Therefore, the analysis process according to Fig. 6, Fig. 6, Fig. 9 and Fig. 10, according to this text. Invented the second best practice @ 施 封 's wafer test parameter analysis method can search for possible problems

Finally, please refer to FIG. 11 and FIG. 12, which show a method for analyzing wafer test parameters according to the third embodiment of the present invention. X is shown in FIG. 11, where steps S: n to S17 are the steps shown in FIG. 3

200410349 V. Description of the invention (12) 301 ~ 30 7 is the same, so it will not be repeated here. Next, in the step, it is to search whether each batch of products remaining after step S16 has a defect (d-efect); in this embodiment, this search step is to search for each wafer of each batch of products, If a batch of products contains more than one defective wafer®, the batch is judged to be defective. If yes, go to step si9 'to pick out the defective wafers in step s2 ° to find out the defects of the wafers with defects: or two: or, a wafer may have defects in different layers. : At this time, a wafer will have more than one defect distribution map. The S20 is succumbed to the step cut. It uses a stacking method to compare the defect distribution map of # 4 and the wafer test parameter value of # 4, and calculates the overlap of the two distribution maps. ratio. After the absence, it is judged in step S22 that the county is not inferior to Qian'an, it is better than the step-^ 目, and whether the sheep is greater than or equal to a preset value, such as 50%,: No, = slightly: In this layer, if all the layers are skipped, the process stops, and the process proceeds to step S26. Time i refers to step 323, which calculates the number of defects in each layer of each wafer "; ^ In step S24, divide the number of defects calculated in step · 23 *: 2Ί! 5 wafer test specification lattice * ( dies) to obtain-: two 二, in step S25, it is judged that the ratio obtained in step S24 is a pre-value '~ greater than or equal to 5 °%; if not, skip this layer of crystal 3, if it is Then, proceed to step S 2 6. &: In step S26, 'it is the second batch of the product after the analysis of the above steps ;: the shell material and the number of defects are selected, so that the process can be connected as shown in Figure 1-not .

200410349 V. Description of the invention (13) Please refer to FIG. 12, step S 31 is the layer selected according to step $ 2 6 of FIG. 12, and search the process related to this layer from the experience accumulation database. Station type, and step S32 shows that after searching in step S31, the item to be tracked is a process station type. It can be known from FIG. 12 that steps S33 to S36 are the same as steps 5 (Π to 504) in FIG. $, So they will not be repeated here. Therefore, the analysis flow from step S31 to step S36 is according to the second comparison of the present invention. The wafer test parameter analysis method of the preferred embodiment can search for machines that may have problems. 0 The number of defects obtained according to step S26 in FIG. 11 and the step S37 shown in FIG. 12 will perform statistical analysis. Calculate a table value as the standard for the number of defects in this layer. At the same time, in Niu \ S38, according to this-the number of defects control standard, according to the present invention, the method of analyzing the parameters of wafers and parameters can be performed here. It only predicts the yield of this product. J < In summary of the product, the wafer test parameters according to the present invention are divided into unified = analysis and common analysis methods to analyze the wafer test parameters. If there is a problem in the process station, and then enter the stage, it can effectively reduce the mistakes of human judgment to continue the machine, reduce production costs, and timely cover the door of the online door I: 坆 0 ankle Production situation to mention Gao Liang The above description is only exemplary, rather than limiting the spirit and scope of the present invention, and equivalent modifications to it should be included in the scope of patents attached below. 〆5 支 更 ’%

Page 19, 200410349 Brief description of the drawings (five), [Simplified description of the drawings] Figure 1 is a flowchart showing the flow of the conventional wafer test parameter analysis method; Figure 2 is a wafer test with no intention to show the wafer Parameter value distribution diagram; FIG. 3 is a flowchart showing the flow of the wafer test parameter analysis method according to the first preferred embodiment of the present invention; FIG. 4 is a flowchart showing the flow continuing the flowchart shown in FIG. 3 Figure 5 is a flowchart showing a flow continuing from the flowchart shown in Figure 4; Figure 6 is a flowchart showing the flow of a wafer test parameter analysis method according to a second preferred embodiment of the present invention; Figure 7 is A flowchart showing the flow of continuation of the flowchart shown in FIG. 6; FIG. 8 is a diagram showing the target lattice distribution of a wafer that is not intended to be displayed, and FIG. 9 is a flow chart showing the continuation of the flow shown in FIG. FIG. 10 is a flowchart showing a flow continuing from the flowchart shown in FIG. 9; FIG. 11 is a flowchart showing a flow of a wafer test parameter analysis method according to a third preferred embodiment of the present invention ; And Figure 12 is a flowchart showing the delay 11 flowchart shown in the flow chart of FIG. Description of component symbols: 101-104 The process of the conventional wafer test parameter analysis method 2 Wafer

Page 20 200410349 Brief description of the diagram 21 Defective lattice 22 Qualified lattice 3 (H ~ 307 Flow chart 4 of the wafer test parameter analysis method of the first preferred embodiment of the present invention 4 (Π ~ 41 5 Continue to step 3 0 Flow 501 to 504 of 7 Continue to flow 6 of step 408, step 414, or step 415 (Π to 607 Flow 701 to 709 of the wafer parameter analysis method of the second preferred embodiment of the present invention Continue to flow 8 of step 6 0 7 Target Lattice Distribution Map 81 Target Lattice 82 Other Lattices 9 (Π ~ 908 Continuing Process S01 ~ S04 of Step 7 0 9 Continuing Process S11 ~ S26 of Step 9 0 7 or Step 9 0 8 The third preferred implementation of the present invention The flow of the method for analyzing the test parameters of the wafer S31 to S38 is continued from the flow of step S26

Page 21

Claims (1)

200410349 ^ Application Patent Scope 1. A wafer test parameter analysis method with a batch of products, which are made in multiple batches, and each wafer item in each batch of products is tested to generate a wafer test to participate in the wafer A sample test item and a process station related to the test item are stored in the wafer with the test parameter values of the wafer, and the crystal contains a number of batches of products divided into γ according to the yield. ^ Includes a high-yield product group and One low dependence, the batch yield of each batch of products in the high-yield product group yields a first standard value; two batches of products in the low-yield product group have a standard value, which is better than the low-yield product or better than After the operation of the first standard value, determine whether the low-yield ratio is zero; the remaining batches of the low-yield product group are searched in the library for the online quality inspection item of the wafer test item and the low Yield product group remaining batch number action. It is used to analyze multiple batches of sub-products that have passed at least one wafer test value after passing through multiple machines. The wafer test items I test items, an online quality inspection and a database, the database is also The circle test parameter analysis method includes at least two product groups. The wafer test parameter values of these product yield product groups are based on the wafer test parameter values and the batches of the batches in the batch. The batch number of the product; the number of the remaining batch numbers in the product group ^ The number of tigers is not zero. The self-test is related to the sample test process station at least ~. When the number of the number is zero, stop dragging 4S0 Page 22 200410349 VI. Patent Application Scope 2. The method for analyzing wafer test parameters as described in item i of the patent application scope,; :: The result of the search operation of the database shows the wafer test items and: . . When the test items are related, the analysis method of the wafer test parameters is more inclusive. According to the statistical analysis method of the high-yield product group, a sample test item result of each batch of products is set to a second standard value. Ratio = sample test item of the product with the remaining batch number in the low-yield product group: the result and the second standard value are deleted from the remaining batch numbers in the low-yield product group by the batch equal to or better than the second standard value The batch number of the product; after the delete action, 'judge whether the number of the remaining batch numbers of the low-yield product group is zero; when == the number of the remaining batch numbers of the low-yield product group is not zero, from the tribute library Search for at least one of the online quality inspection item and the process station category related to the sample test item; and stop the search operation when the number of remaining lot numbers of the low-yield product group is zero. 3. Wafer test parameter analysis method as described in item 2 of the scope of patent application, When the result of the search operation in the database shows that the sample test item is related to the quality test item on the visit ring, the wafer test parameter analysis method further includes: The statistical analysis method of the online quality test project produces a third standard value; ~ The online quality test item of the product with the remaining batch number in the β low-yield product group Page 23 200410349 6. The result of the scope of patent application and the third standard value are to delete the batch number of the batch of products equal to or better than the third standard value from the remaining batch numbers of the low-yield product group; after the deletion action To determine whether the number of remaining batches of the low-yield product group is zero; when it is determined that the number of remaining batches of the low-yield product group is not zero, search the database for the online quality test items related to the At least one of the process stations ^; and when it is judged that the number of the remaining lot numbers of the low-yield product group is zero, the search operation is stopped. 4. The wafer test parameter analysis method as described in item 3 of the scope of patent application, wherein when the result of the search action of the database shows that the online quality test is related to the process station, the wafer test parameter analysis The method is more packaged and searched. The high-yield product group passes through the process station of the process station. The product with the remaining batch number in the search rate group 2 passes in the process station: m ΐ t The product with the remaining batch number in the group passes the pass with a higher probability. The Gao Gen semi-oral mouth group passed the chance machine. 200410349 6. Scope of Patent Application If the number of trial batches remaining in the search method is determined by the stationer, the program will stop the analysis of the item number of the test item, and the test batch will be divided into zero. The number of hours and the number of rounds measured on the production batch are zero. The mass ratio of the crystals is not related to the test. The good phasor measurement shows the number of low-value groups on the upper line. Production of the item of the quasi-quality product Jingguojing's subject self-standard production number test number d knot the product No. 3 batch test and approval, the first batch of production, the first surplus of the surplus and the remaining value should be approved The low-remaining items and the remaining items are related to the J-seeking products that are above the standard. The winning break line group is around the search group group or the third-party product of this product category is ranked first. Liku trial production and analysis of the later rate, the rate of the rate, the rate of the material, the rate of the rate, and the division; Liang Souliang, please qualified and good plan to delete the good results as zero low medium and low. f The product is in high order, low settlement, middle action, and the library is based on the work as above: the number should be used, except if the material is cut off; the broken action, the center line containing the evidence, the result, the batch number, and the deletion of the capital are determined. 6 The package is based on the analysis method of wafer test parameters described in Dangdang 7, as described in # 6 of Patent Application Scope, where the results of the search action of the database show that the online quality test item 1 is related to the process station At that time, the analysis method of the wafer test parameters is more inclusive, and the 4 times yield rate product group of the technology brother passes through the machine of the process station; ^ A ·) Page 25 200410349 6. Scope of Patent Application ----- Search Brother ^ The product with the remaining batch number in the low-yield product group passes through the process station of the process station; and judgment 4 in the low-yield product group The remaining batches have a higher probability of passing than the high-yield product group. ^ 8 'The wafer test parameter analysis method described in item 7 of the scope of patent application, which uses a common analysis method to determine that the remaining batches in the low-yield product group have a higher probability of passing than the high-yield product group. Probability of the machine. 9. The wafer test parameter analysis method as described in item 丨 of the patent application scope, wherein when the result of a search operation in the database shows that the wafer test item is related to the process station, the wafer test parameter analysis method It also includes the search of the machine through which the high-yield product group passes through the process station; searching for the remaining batches in the low-yield product group on the machine that has been manufactured; and the low-yield judged by j The product passing probability of the remaining batches in the product group is higher than that of the yielding product group. ^ 1 10. The wafer test parameter analysis method described in item 9 of the scope of patent application, which uses a common analysis method To judge that the low-yield product group's remaining batches have a higher pass rate than the high-yield product group's leftover I. ， The flat machine 1 1. The wafer test parameter analysis method as described in item 丨 of the patent application scope 4,4 · :: Page 26 200410349 VI. Patent Application Scope Method, in which when the number of remaining batch numbers of the low-yield product group is determined to be non-zero, the wafer test parameter analysis method further includes ... Whether the product of the remaining batch number in the yield group is defective; When it is judged that the product of the remaining batch number in the low-yield product group is not defective, the search is stopped; when it is judged that the product of the remaining batch number in the low-yield product group is defective Obtain the lot number of the defective product; Obtain the plural number on each wafer where the defect is located in the defective product Each layer has a defect distribution map for each layer; Analyzes the wafer test parameter value distribution chart for each wafer of the batch of products with a defect; the complex = individual layer defect distribution map and the wafer test The parameter value distribution map is entered into ^ graphs to obtain the target layer with a high overlap ratio from the plurality of layers according to the overlap ratio; and 4 the process of searching for the brother in the database and the target layer Stop there. ^ = ΪSpecial !! The wafer test parameter analysis method described in item 11 of the scope: Know 1. When the result of the search operation of the database shows the target layer type: the second, when off, the wafer test parameters The analysis method further includes B = 2 = A yield rate machine passes through the process station; Ί :: t rate 2 group of the remaining batch number of products in the process station judged that the low yield product ^ rate products The probability of passing the remaining batches in the group is higher than that of the high σσ group. 200410349 VI. Application patent scope 1 3. The wafer test parameter analysis method described in item 12 of the patent application scope uses common analysis method to judge that the remaining batches in the low-yield product group have a high probability of passing. Probability machines in this high-yield product group. 14. The method for analyzing wafer test parameters as described in item 11 of the scope of patent application, further comprising: generating a statistical analysis method based on the number of defects of the target layer as a defect control standard for the target layer. Four standard values. 15. The method for analyzing wafer test parameters as described in item 14 of the scope of patent application, further comprising: predicting the yield of the product to the target layer in the subsequent process according to the fourth standard value. 16. The method for analyzing wafer test parameters as described in item 1 of the scope of patent application, wherein when determining that the number of remaining lot numbers of the low-yield product group is not zero, the method for analyzing wafer test parameters further includes: judgment Whether the product of the remaining batch number in the low-yield product group is defective; when it is judged that the product of the remaining batch number in the low-yield product group is not defective, the search operation is stopped; when it is judged that the product of the remaining batch number in the low-yield product group is When defective, obtain the batch number of the defective product; 200410349 VI. The scope of applying for a patent is a plurality of layers on each wafer where the defect is obtained in the batch of products with defects, wherein each layer has a defect distribution map; calculation of the number of defects on the plurality of layers; analysis Wafer test parameter value distribution maps of each wafer of the batch of products with defects; overlay the defect distribution maps of the plurality of layers and the wafer test parameter value distribution map to obtain their overlapping ratios; respectively Calculate the ratio of the number of defects on the multiple layers of each wafer to the number of lattices with substandard wafer test parameter values; determine whether the overlap ratio is greater than or equal to a fifth standard value; when it is determined that the overlap ratio is less than When the fifth standard value, the layer is skipped; when it is judged that the overlap ratio is greater than or equal to the fifth standard value, the layer is marked as a first defect layer; whether the ratio is greater than or equal to a sixth standard When the ratio is judged to be less than the sixth standard value, the layer is skipped; when the ratio is judged to be greater than or equal to the sixth standard value, the layer is labeled As a second defect layer; searching for the batch of products and their batch numbers containing wafers having at least one of the first defect layer and the second defect layer; and searching from the database for at least the first defect layer The process station is associated with one of the defect layer and the second defect layer. 17. The wafer test parameter analysis method according to item 16 of the scope of patent application, wherein when the result of a search operation of the database shows the first defect layer Page 29 200410349 VI. Where at least one of the scope of the patent application and the second defect layer is related to the process station, the wafer test parameter analysis method further includes: searching for the high-yield product group passing through the process station. A machine; searching for a machine through which the batch of products including a wafer having at least one of the first defect layer and the second defect layer passes at the process station; and determining that it includes at least the first defect layer The wafers with one of the second defect layers are more likely to pass through the batch than the high-yield product group. 18. The method for analyzing wafer test parameters as described in item 1 γ of the patent application scope, which uses a common analysis method to determine whether it contains at least one of the first defect layer and the second defect layer. The batch of wafers has a higher probability of passing than the high-yield product group. 19. The method for analyzing wafer test parameters as described in item 6 of the patent application scope, further comprising: as described above, the number of defects of at least one of the first defect layer and the second defect layer is generated by statistical analysis. A seventh standard value of a defect control standard for at least one of the first defect layer and the second defect layer. 20. The method for analyzing wafer test parameters as described in item 9 of the scope of patent application, further comprising: predicting based on the seventh standard value to the first defect layer and the second defect layer in a subsequent process Among them, the yield of the batch of products. 200410349 VI. Scope of patent application 2 1. A method for analyzing wafer test parameters, which is used to analyze a plurality of batches of products each having a batch number, the batches of products are made by a plurality of machines, and each batch of products Each wafer is tested by at least one wafer test item to generate a wafer test parameter value. The wafer test item includes performing multiple electrical tests on each lattice of each wafer, and the wafer test The parameter values are the statistical results of the plurality of electrical tests, the wafer test item, a sample test item, and an online line related to the wafer test item. Mouth and shellfish testing items and process stations are stored in a database that also stores the wafer test parameter values. The wafer test parameter analysis method includes: dividing the multiple batches of products into at least Two product groups, which include a South-yield product group and a low-yield product group; a first standard value is generated by statistical analysis based on the wafer test parameter values of each batch of products of the high-yield product group; The wafer test parameter values of each batch of products of the i-A low-yield product group and the first standard value are deleted from the batch numbers of the batches of products of the low-yield product group equal to or better than the first standard The batch number of the batch of products; After the sword coating operation, determine whether the number of remaining batches of the low-yield product group is zero; when it is determined that the number of remaining batches of the low-yield product group is zero, stop analyzing; and I determine the low-yield When the number of remaining lot numbers in the product group is not zero, perform the following steps: Page 31, 200410349 Application scope of patent = 1 Low-yield product number of each lattice of each wafer of this number of test values, on the wafer ^ t wafer does not meet the plurality of electrical test specifications of the lattice For the purpose of: bottom: lattice, and obtain one target lattice distribution map of each wafer, overlay the target lattice distribution map of each circle with the wafer test parameter value distribution map, and re-weight ratio Wafers larger than a second standard value are used to select wafers, and the lot number of the product with a target wafer greater than a third standard value in the low-yield product group is selected, and searched and searched from the database. At least one of the sample test item and the process station category related to the wafer test item. 2Γ The wafer test parameter analysis item described in item 21 of the patent scope ΐ The result of the search operation in the W database shows that the wafer test item package i Υ 7 ασ When the test items are related, the wafer test parameter analysis method According to each crucible of the high-yield product group. The results of Tong Ye Fen Yan Tai's sample test items produced a second standard value in the following manner: ϋ: Sample test items for the remaining batch numbers of products in the 5 rate product group: the first standard value. In the remaining batch number of the low-yield product group, delete the batch number of 4 or better than the number of stems -ρ @ 于 Jiw drought of the batch; θ ^ ^ ^ Whether the quantity 疋 is zero; ^ AA page 32 200410349 VI. Patent application scope Nayi " " 'When it is judged that the number of the remaining batch numbers of the low-yield product group is not zero, search from the > material library for the sample test items related The process station; and when the number of the remaining batch numbers of the low-yield product group is judged to be zero, the search operation is stopped. 2 3. The method for analyzing wafer test parameters as described in item 22 of the scope of patent application, wherein when the result of a search operation in the database shows that the sample test item is related to the process station, the wafer test parameter analysis The method further includes: searching for a machine through which the high-yield product group passes through the process station; searching for a machine through which the remaining batch number of the low-yield product group passes through the process station; and judging the low-yield product group The probability of passing the remaining batches is higher than that of the high-yield product group. 24. If the wafer test parameter analysis method described in item 23 of the patent application scope is based on the common analysis method, it is judged that the low-yield product group applies for the remaining batch number of the product with a higher pass rate than the high-yield product. Group of probabilistic machines 0 2 5. The wafer test parameter analysis method as described in item 21 of the scope of patent application, wherein when the result of the search operation in the database shows that the wafer test item is related to the process station Analysis method of the wafer test parameters 200410349 6. The scope of patent application includes: searching for the machine through which the high-yield product group passes through the process station; searching for the machine through which the remaining batch number of the low-yield product group passes through the process station; and judging the low The yield rate of the remaining batches in the yield group is higher than that of the high yield group. 26. The wafer test parameter analysis method described in item 25 of the scope of patent application, which uses a common analysis method to determine that the remaining batches in the low-yield product group have a higher pass probability than the high-yield product group. After the chance table. '27. The method for analyzing wafer test parameters as described in item 21 of the scope of patent application, wherein when determining that the number of remaining lot numbers of the low-yield product group is not zero, the method for analyzing wafer test parameters further includes: Judging whether the products of the remaining batch number in the low-yield product group are defective; When judging that the products of the remaining batch number in the low-yield product group are not defective, stop searching; T When judging the remaining batch numbers of the low-yield product group When the product is defective, the batch number of the defective product is obtained; the multiple layers on each wafer where the defect is obtained in the defective batch of products', wherein each layer has a defect distribution map; Distribution chart of wafer test parameter values for each wafer of the batch of products; 200410349 6. Scope of patent application: Overlay the defect distribution map of the multiple layers with the wafer test parameter value distribution map to obtain at least one target with a high overlap ratio from the multiple layers according to the overlap ratio. Level, and search from the database for process station types related to the target level. 28. The method for analyzing wafer test parameters as described in item 27 of the scope of patent application, wherein when the result of a search operation in the database shows that the target layer is related to the process station, the method for analyzing wafer test parameters is more Including: searching for the machine that the Yield Product Group passed through in the manufacturing station; searching for the machine with the remaining batch number in the Low Yield Product Group through the manufacturing station; and judging the low yield product The probability of passing the remaining batches in the group is higher than that of the high-yield product group. 29. The method for analyzing wafer test parameters as described in item 28 of the scope of patent application, which uses a common analysis method to determine that the remaining batches in the low-yield product group have a higher pass probability than the high-yield product group. Probability machine. '30. The method for analyzing wafer test parameters as described in item 2 of Shenjing's patent scope further includes: generating a statistical analysis method based on the number of defects of the target layer as a defect control standard for the current target layer The fourth standard value. ' 200410349 VI. Patent application scope 3 1. The wafer test parameter analysis method as described in item 30 of the patent application scope further includes: prediction based on the fourth standard value in subsequent processes to the target level Product yield. 3 2. The method for analyzing wafer test parameters as described in item 21 of the scope of patent application, wherein when determining that the number of remaining lot numbers of the low-yield product group is not zero, the method for analyzing wafer test parameters further includes: judgment Whether the product of the remaining batch number in the low-yield product group is defective; when it is judged that the product of the remaining batch number in the low-yield product group is not defective, the search operation is stopped; when it is judged that the product of the remaining batch number in the low-yield product group is In the case of a defect, the batch number of the defective product is taken; a layer is obtained on each wafer where the defect is obtained in the defective product, wherein each layer has a defect distribution map; a plurality of layers are calculated The number of defects on the lot; 'Analyze the drawings of the batch of products with defects; W Japanese yen test parameter value distribution of each day 0 The wafer test parameter value wheel turns the defects of multiple layers r boundary 1 rao iai Perform the overlay operation to obtain the overlap ratio; separately calculate the ratio of the number of crystal defects that do not meet the specifications on the multiple layers of each wafer; The test judges whether the overlap ratio is greater than or equal to the five standards of Changchu \ Siyi. The overlap ratio should be judged. If it is less than the fifth #jinsiaoqian value 'fifth quasi-value day inch' skip this layer; 200410349 VI. When the scope of patent application is judged that the overlap ratio is greater than or equal to the fifth standard value, the layer is not marked as a first defect layer; whether the ratio is greater than or equal to a sixth standard value; when the ratio is judged to be less than When the sixth standard value, the layer is ignored; when it is judged that the ratio is greater than or equal to the sixth standard value, the layer is marked as a second defective layer; the search includes at least the first defective layer and the The batch of products and the batch number of one of the wafers of the second defect layer; and searching the process station for at least one of the first defect layer and the second defect layer from the database. 3 3. The method for analyzing wafer test parameters as described in item 32 of the scope of patent application, wherein when the result of the search operation of the database shows that at least one of the first defect layer and the second defect layer is related to the process When the station types are related, the wafer test parameter analysis method further includes: searching for a machine through which the high-yield product group passes through the process station; searching for including at least one of the first defect layer and the second defect layer The machine through which the batch of products of the wafer passes at the process station; and the probability of the batch of products containing wafers containing at least one of the first defect layer and the second defect layer being higher than that of the Gao Liang Rated product groups pass chance machines. 3 4. The wafer test parameter analysis method described in item 33 of the scope of the patent application, which uses a common analysis method to determine whether it contains at least the 200410349 VI. Scope of patent application The defect rate of wafers in one of the defect layer and the second defect layer is higher than that of the high-yield product group. 3 5. The method for analyzing wafer test parameters as described in item 32 of the scope of the patent application, further comprising: generating a statistical analysis method based on the number of defects of at least one of the first defect layer and the second defect layer. A seventh standard value of a defect control standard for at least one of the first defect layer and the second defect layer. 36. The method for analyzing wafer test parameters as described in item 35 of the scope of the patent application, further comprising: predicting, according to the seventh standard value, to the first defect layer and the second defect layer in a subsequent process. One of the yields of the batch of products. Page 38