TWI445049B - Coating developing device, coating developing method, and memory medium - Google Patents

Description

Coating developing device, coating developing method, and memory medium

The present invention relates to a coating and developing device, a coating and developing method, and a memory medium storing the program for carrying out the method, the coating and developing device comprising a heating module, the heating module comprising an energy supply portion for coating a chemically amplified photoresist The energy is supplied to the entire surface of the substrate to which the pattern is exposed so as to change the solubility of the region exposed to the pattern with respect to the developer.

In the photoresist step of one of the semiconductor processes, a photoresist is coated on the surface of the semiconductor wafer (hereinafter referred to as a wafer) to form a photoresist film, and the photoresist film is exposed in a predetermined pattern and developed to form a photoresist pattern. Such a treatment is generally carried out using a system in which a coating and exposing device is attached to a coating and developing device that performs coating and development of photoresist.

In the photoresist, a chemically amplified photoresist containing an acid generator which generates an acid by exposure and energy supply is widely used as a mainstream, whereby a chemically amplified photoresist is used to form a photoresist film, and the exposed wafer is exposed. A heat treatment called PEB is accepted before the development process. In the PEB treatment, the acid generated by the exposure thermally diffuses and undergoes a chemical amplification reaction (acid catalyst reaction) in the photoresist, which causes the exposed region to deteriorate and the solubility in the developer to change.

In the exposure apparatus, the exposing step is: irradiating light from a light source provided in the exposure device toward a predetermined area, sequentially moving the irradiation area, and supplying the photoresist along a predetermined pattern. The total amount of energy applied to the photoresist, if the photoresist does not exceed the intrinsic range, that is, does not cause a sufficient amount of acid to be reacted by the acid catalyst when the PEB treatment is generated, so it is applied to When the energy of the photoresist exceeds the intrinsic range, the solubility of the developer in the exposed region changes drastically. Therefore, when exposure is performed by the exposure apparatus, exposure is continued for an irradiation area until the energy exceeding the inherent range has been supplied.

A step called so-called immersion exposure is sometimes performed as a light source of the exposure apparatus, for example, an ArF light source that outputs an ArF laser, and is formed into a fine pattern. A light film that transmits light is formed on the photoresist film, and light from a light source such as the ArF light source is transmitted through the liquid film. In order to make the line width of the pattern more subtle, it has been reviewed whether EUV light source emitting EUV (Ultraviolet light) can be used instead of immersion exposure using the ArF light source instead of using light having an output wavelength lower than that of the ArF light source. For the exposure process, a review of the specific light source or photoresist material is underway.

However, compared with the ArF laser or the like, EUV has a weak energy and has a limit on improving the resist sensitivity. Therefore, when EUV is applied to an exposure apparatus, the exposure time of an irradiation area becomes long. As a result, the amount of processing for the exposure processing is lowered.

Further, Patent Document 1 describes a method of forming a pattern having a good shape for a thick photoresist film, first performing a first exposure along a predetermined pattern, and then performing a second exposure for exposing the entire wafer to a second exposure. At the end, only the area of the first exposure is received, so that the total amount of energy supplied to the space is equal to or greater than a certain value, and the solubility in the developer is changed. Here, it is considered that when exposure processing by EUV is also described in Patent Document 1, exposure should be performed twice.

However, the transport mechanism provided in the coating and developing device must control the following operations to transport the photoresist coated wafer to the exposure device, and on the other hand, return the exposed wafer to the coating and developing device, for example, After the exposure is completed, each wafer must be placed in the module of the channel before the exposure device or the heating module for PEB, until the preparation by the delivery mechanism is ready, sometimes the standby time will be in each The wafers are all different. It is known that after the amount of acid which has just deteriorated the exposure region sufficiently, the time until the PEB is performed (PED time) is different on each wafer, and the distribution of the acid generated until the PEB is performed is There is a difference, and as a result, the shape of the photoresist pattern is made different. Patent Document 1 does not describe the PEB processing after exposure at which time point should be performed. Therefore, in order to suppress deterioration of the shape of the photoresist pattern, the invention of Patent Document 1 is insufficient.

[Patent Document 1] Japanese Patent Laid-Open No. 3-142918 (Fig. 1, etc.)

In view of the circumstances, it is an object of the present invention to provide a coating and developing device, a coating and developing method, and a memory medium embodying the same, which can suppress an increase in exposure time in an exposure device, and even if the exposure process is terminated by the exposure device, The time required for the heat treatment by changing the solubility of the exposed region to the developer by the acid generated in the chemically amplified photoresist is different for each substrate, and can also be suppressed by each substrate. The difference in the shape of the photoresist pattern.

The coating and developing device of the present invention comprises: a coating module, which applies a chemically amplified photoresist to the surface of the substrate to form a photoresist film, and the chemically amplified photoresist is heated by the total amount of energy supplied; a change in solubility of the developer in the region subjected to the energy supply; a transfer mechanism receiving the substrate exposed to the pattern in such a manner that the amount of energy supplied to the photoresist film does not exceed the intrinsic range; The heating module includes an energy supply unit that transmits the exposed substrate by the transmission mechanism, and supplies energy to the entire photoresist film, the amount of energy not exceeding the inherent range, and the energy supplied during the exposure. The sum of the amounts exceeds the intrinsic range; and the heating plate heats the substrate to change the solubility; and the developing module develops the heated substrate to form a pattern on the photoresist film; The energy supply unit supplies energy to a substrate that is fed into the heating plate or supplies energy to a substrate placed on the heating plate.

The heating module may further include a transport mechanism that transports the substrate received from the transfer mechanism to the heating plate, for example, the energy supply portion may supply energy to the substrate transported by the transport mechanism, and at this time, the transport mechanism The mounting surface on which the substrate is placed may be included, and the adsorption mechanism for adsorbing the substrate on the mounting surface may be included in order to control the distance from the energy supply mechanism to the substrate. The adsorption mechanism may further comprise an electrostatic chuck for electrostatically adsorbing, for example, a substrate, the mounting surface may be formed by the surface of the electrostatic chuck, or by sucking the back of the substrate to suck The suction mechanism attached to the mounting surface is constructed. The transport mechanism is a cooling plate, and a substrate heated by, for example, a heating plate is placed, and the substrate is cooled.

And supplying energy to the substrate placed on the heating plate, the energy supply portion may be disposed opposite to the heating plate to supply energy to the substrate placed on the heating plate. The energy supply unit has a distance from the substrate, and the heating plate may include an adsorption mechanism that adsorbs the substrate on the mounting surface. The adsorption mechanism may further include an electrostatic chuck that electrostatically adsorbs the substrate, and the mounting surface may be formed by the surface of the electrostatic chuck or by a suction mechanism that sucks the back surface of the substrate to adsorb the surface.

The energy supply unit may include, for example, a light source for exposing the substrate, or a charged particle supply source for supplying charged particles to the substrate by generating a discharge on the substrate. Further, the charged particle supply source may be formed by an electrode formed to extend downward in a needle shape to cause discharge on the substrate. The heating plate may be provided, for example, in a processing container in which a water vapor supply mechanism for supplying water vapor is contained.

The coating development method of the present invention comprises the steps of: applying a chemically amplified photoresist to a surface of a substrate to form a photoresist film, the chemically amplified photoresist being subjected to heating due to the total amount of energy supplied being heated and being subjected to heating a change in the solubility of the developer in the region of the energy supply; the photoresist is transferred to the exposure device along the pattern by the transfer mechanism being transferred to the heating module such that the energy supplied to the photoresist does not exceed the range a substrate to be exposed; the energy supply unit provided in the heating module supplies energy to the entire substrate of the substrate that is fed into the heating plate or the substrate placed on the heating plate, and the energy is The amount does not exceed the intrinsic range, and the sum of the amounts of energy supplied during the exposure exceeds the intrinsic range; the substrate is placed on a heating plate disposed in the heating module; and the substrate is heated by the heating plate Varying the solubility; and developing the substrate heated by the heating module to form a pattern on the photoresist film.

For example, the step of transporting the substrate exposed by the exposure device to the heating plate through the feeding region by the conveying mechanism provided in the heating module, The step of supplying energy by the energy supply unit to the substrate transported by the transport mechanism. The step of supplying energy by the energy supply unit may be performed after the step of placing the substrate on the heating plate provided in the heating module. At this time, a step of supplying energy by the energy supply unit is performed in the step of heating the substrate on the substrate placed on the hot plate by the heating plate.

The memory medium of the present invention has a computer program for coating a developing device, the coating and developing device comprising: a coating module for applying a chemically amplified photoresist to a surface of the substrate to form a photoresist film, the chemically amplified photoresist The solubility of the developer in the region subjected to the energy supply may be changed due to the total amount of energy supplied being more than the intrinsic range and being heated; the transmitting mechanism receiving the substrate exposed to the exposure device along the pattern, 俾The energy supplied to the photoresist does not exceed the inherent range; the heating module includes a heating plate that heats the substrate that is transferred by the transmission mechanism; and the developing module heats the heating module The substrate is developed to form a pattern on the photoresist film; the memory medium is characterized in that the computer program is used to implement the above coating development method.

According to the coating and developing device of the present invention, the chemically amplified resist is formed by the chemically amplified photoresist which changes the solubility of the developer in the region where the energy is supplied, because the total amount of energy supplied exceeds the intrinsic range and is heated. The film is applied to the substrate, and then exposed to the pattern by an exposure device in an amount not exceeding the energy of the range, and then the substrate is transported toward the heating module. Further, the energy supply unit provided in the heating module supplies energy to the entire photoresist film that is fed into the heating plate or is placed on the substrate on the heating plate, and the amount of energy does not exceed the inherent The sum of the ranges and the amount of energy supplied at the time of exposure exceeds the intrinsic range. Therefore, the amount of energy supplied to each of the exposed regions by the pattern exposure by the exposure device is suppressed, so that the time required for the exposure of the pattern can be suppressed, and the acid generated in the photoresist film due to the exposure of the pattern can be suppressed. It the amount. Further, by supplying energy to the energy supply unit, the amount of acid in the region exposed by the pattern can be increased and then heated by the heating plate, so that the time is from the exposure device to the heating module until each substrate is heated. There are differences in the process, and it is also possible to suppress the difference in the distribution of the acid, so that the shape of the photoresist pattern can be suppressed from being different in each substrate.

(Best form of implementing the invention)

First embodiment

First, a first embodiment of a heating module (PEB module) that performs PEB processing, which is a main part of an embodiment of the present invention, will be described with reference to a longitudinal sectional side view and a cross-sectional plan view of FIG. 1 and FIG. It. The heating module 1 shown in the drawing is placed in an atmosphere of the coating and developing device 8 to be described later, and is fed into a wafer W which is, for example, a chemically amplified positive resist (hereinafter only described as a photoresist). The photoresist film is formed, and the photoresist film is exposed in a predetermined pattern by the exposure device C4 connected to the coating and developing device 8.

The heating module 1 includes a frame 11 and an opening of the transfer port 12 of the wafer W is formed on the sidewall of the frame 11. A partition plate 13 is provided in the casing 11, and the inside of the casing 11 is vertically partitioned. The upper side of the partition plate 13 is configured as a feeding portion 19 for feeding the wafer W to the heating plate 41. If one side of the delivery port 12 is the front side, a horizontal cooling plate 2 is provided on the front side of the feeding area 19. The cooling plate 2 includes a cooling flow path (not shown) on the back side thereof for allowing, for example, temperature-regulating water to flow therein, so as to be placed on the mounting surface 20 on the surface of the cooling plate 2 The wafer W is cooled.

The surface portion 21 of the cooling plate 2 is made of a dielectric material, and an electrode 22 is provided in the surface portion 21. The electrode 22 is connected to a power supply unit 23 to which, for example, a high voltage is applied, and the control unit 80, which will be described later, controls the application of the voltage from the power supply unit 23 to the electrode 22. With such a configuration, the cooling plate 2 can be configured as an electrostatic chuck, and the entire back surface of the wafer W placed on the surface portion 21 can be adsorbed to the cooling plate 2.

The cooling plate 2 is configured as a transport mechanism for transporting the placed wafer W, and is connected to the drive unit 25 via the support portion 24, so that the drive unit 25 can be used in the housing. 11 moves in the horizontal direction from the front side to the inner side. The drive unit 25 includes, for example, a speed adjuster (not shown), and the cooling plate 2 can be moved at an arbitrary speed in response to a control signal transmitted from the control unit 80. The 18 series slits in Fig. 2 are used to pass the support portion 24.

In the figure, the 14-series lifting pin is extended by the elevating mechanism 15 on the cooling plate 2 that has moved to the front side, and the wafer W is transferred between the conveying mechanism that has entered the casing 11 through the conveying port 12 and the cooling plate 2.

An elongated energy supply unit 3 is provided in the feeding area 19 so as to be perpendicular to, for example, the front direction of the cooling plate 2. The energy supply unit 3 is constituted by the base portion 31 and a light source 32, for example, a rod-shaped light source provided under the base portion 31, and the light source 32 is constituted by, for example, a UV lamp, and the ultraviolet rays are irradiated downward in a strip shape. The energy supply unit 3 is connected to the output adjustment unit 33 to adjust the output of the light source 32. The output adjustment unit 33 controls the light output from the light source 32 based on the control signal from the control unit 80.

As shown in FIGS. 3(a) and 3(b), the cooling plate 2, on which the wafer W is adsorbed on the mounting surface 20, passes under the light source 32 when the cooling plate 2 is moved from the front side toward the inside under the energy supply portion 3, and the surface of the wafer W is faced. The light from the light source 32 is supplied as a whole. At this time, as described above, since the wafer W is adsorbed by the cooling plate 2, the distance between the light source 32 indicated by h1 and the wafer W below it is kept constant while the cooling plate 2 is moving.

A circular heating plate 41 is disposed inside the casing 11, and the wafer W is placed thereon to heat the wafer W to be placed thereon. A heater 42 is provided inside the heating plate 41, and the heater 42 receives a control signal from the control unit 80, and controls the temperature of the mounting surface 40 of the wafer W on the surface of the heating plate 41 to be placed by the mounting surface 40. The wafer W is heated at any temperature. In the figure, 41a and 41b are supporting members for supporting the heating plate 41. In the figure, the 16-series lifting pin is protruded from the heating plate 41 through the elevating mechanism 17, and the wafer W is transferred between the cooling plate 2 and the heating plate 41 which are moved to the heating plate 41.

An annular exhaust portion 43 is provided around the heating plate 41, and a plurality of exhaust ports 44 are provided on the surface of the exhaust portion 43, and an opening is formed along the circumferential direction of the exhaust portion 43. The exhaust unit 43 is connected to one end of the exhaust pipe 46, and the other end of the exhaust pipe 46 is connected to the exhaust mechanism 47, and is constituted by a vacuum pump or the like. The exhaust mechanism 44 is exhausted from the exhaust hole 44 through the exhaust flow path 45 formed in the exhaust pipe 46 and the exhaust portion 43. The exhaust mechanism 47 has The pressure control means (not shown) receives the control signal transmitted from the control unit 80, and controls the amount of exhaust gas due to the control signal.

A circular cover 51 is provided on the heating plate 41 so as to be permeable to the support member 51a and freely movable up and down by the elevating mechanism 52, and the edge portion of the cover 51 protrudes downward. When the lid body 51 is lowered, as shown in FIG. 3, the edge portion is in close contact with the edge of the exhaust portion 43 through the annular close-contact member 48, and the periphery of the wafer W placed on the heating plate 41 is configured as a processing space for the closed space. S. The exhaust unit 43 and the lid 51 constitute a processing container 50.

As shown in FIG. 4, the center of the lid body 51 is connected to one end of the gas supply pipe 61. The rectifying plates 54 and 55 are horizontally provided in the lid body 51, and the space on the wafer W is partitioned in the vertical direction to form a first circulation chamber 56 and a second partition in which the rectifying plates 54 and 55 are separated from each other. Flow chamber 57. A plurality of gas outflows 54a and 55a are provided in the flow regulating plates 54 and 55, respectively, and the gas supplied from the gas supply pipe 61 to the first flow chamber 56 is in the order of the gas outflow port 54a, the second flow chamber 57, and the gas outflow port 55a. The flow is supplied to the processing space S to supply the entire surface of the wafer W. In the figure, the 58-series heating unit includes a heater for preventing condensation of water vapor.

In the figure, the 61a-type tape reel heater is wound around the gas supply pipe 61 to prevent condensation of water vapor in the gas supply pipe 61, and is heated in, for example, the temperature of the gas flowing through the gas supply pipe 65. As shown in Fig. 1, the other end of the gas supply pipe 61 forms an opening toward the gas phase portion of the container 62 in which the pure water is stored, and the container 62 includes a temperature sensor 63 for detecting the temperature of the pure water inside. In the figure, a 64-series wrap-around heater is a heating mechanism provided to surround the outer periphery of the container 62, and is provided by a heater 64a, a heat insulating material 64b surrounding the heater 64a, and an outer casing 64c surrounding the heat insulating material 64b. The temperature sensor 63 outputs a signal to the control unit 80 in response to the water temperature detection result in the container 62. Based on the output, the control unit 80 outputs a control signal to the sheath heater 64 to control the water in the container 62. The temperature is the set temperature.

The liquid phase in the container 62 is immersed in a nozzle 67 for bubbling, and the nozzle 67 is connected to the gas supply source 69 through a gas supply pipe 68. The gas supply source 69 stores an inert gas such as N ₂ gas. The upstream side of the gas supply pipe 61 branches in the way toward the container 62 to form a branch pipe 65, and the upstream side of the branch pipe 65 is connected to the gas supply source 69.

A gas supply device group 66 composed of a valve or a mass flow controller or the like is inserted into the branch pipe 65 and the gas supply pipe 68, and the supply or stop of the N ₂ gas is controlled by the respective pipes. Once the N ₂ gas flows out of the gas supply pipe 68 from the nozzle 67 toward the container 62, it is heated and foamed by the coating heater 64, and the N ₂ gas is humidified and flows into the gas supply pipe 61. Through tube 65 and into the branch 61 of the gas supply pipe is humidified N ₂ gas within the gas supply pipe 61 N ₂ gas mixture, the process comprising steam supply to the space S with a predetermined amount of the N ₂ gas to enabling Promotes acid catalyst reaction in photoresist.

Next, the configuration of the coating and developing device 8 including the heating module 1 will be described. Fig. 5 is a plan view showing a system in which the exposure device C4 is connected to the coating and developing device 8, and Fig. 6 is a perspective view of the same system. And Figure 7 is a longitudinal section of the same system. The device 8 is provided with a carrier block C1 configured to take the transfer arm 82 out of the sealed carrier C placed on the mounting table 81 for transfer to the processing block C2, and transfer the arm 82. The processed wafer W is received from the processing block C2 to return it to the carrier C.

In the processing block C2, as shown in FIG. 6, in this example, the bottom block is sequentially stacked from the bottom to the top: a first block (DEV layer) B1 for developing processing; and a second block (BCT layer). B2, for forming an anti-reflection film formed on the lower layer of the photoresist film; a third block (COT layer) B3 for coating the photoresist film; and a fourth block (TCT layer) B4 for The formation of an anti-reflection film formed on the upper layer of the photoresist film is performed. The second block (BCT layer) B2 and the fourth block (TCT layer) B4 are composed of a coating module that is used to form an anti-reflection film formed on the lower layer of the photoresist film by a spin coating method. The liquid medicine formed by the protective film coated with the photoresist film is coated; the pedestal unit constitutes a processing module group of the heating ‧ cooling system for performing pre-treatment and post-treatment of the coating module; and conveying The arms A2 and A4 are disposed between the coating module and the processing module group, and the wafer W is transferred between the two.

The cradle unit is arranged along the transport area R1 in which the four transport arms A1, A2, A3, and A4 move, and is configured by stacking the above-described heating and cooling system modules. The third block (COT layer) B3 has the same configuration except for the liquid-based photoresist. The second to fourth blocks B are configured in the same layout as the first block B1 to be described later in plan view.

On the other hand, regarding the first block (DEV layer) B1, as shown in FIG. 7, two developing modules 83 corresponding to the coating module are stacked in a DEV layer B1, and the mount units U1 to U4 are provided. The processing module group of the heating and cooling system is configured to perform pre-processing and post-processing of the developing module 83. Further, a transport arm A1 is provided in the DEV layer B1 for transporting the wafer W to the two-stage developing module 83 and the processing module. That is, it is configured to be common to the two-stage developing module transport arm A1. In the DEV layer B1, for example, the cradle unit U4 is constituted by the heating module 1.

Further, as shown in FIGS. 5 and 7, the processing block C2 is provided with a mount unit U5 located at a position where the four transport arms A1, A2, A3, and A4 are accessible. The cradle unit U5, as shown in FIG. 7, includes a transfer platform TRS, a transfer platform CPL with a temperature adjustment function, and a transfer platform BF that can temporarily hold a plurality of wafers, so that it can be combined with each block B1~B4. The wafer W is transferred between the transfer arms A1 to A4. A transfer arm D1 that can be freely raised and lowered is provided near the stand unit U5, and can be arranged close to the platform of the stand unit U5. And the transfer arm 82 can also be close to the platform provided at the height position corresponding to the BCT layer B2 and the DEV layer B1.

Further, in the processing block C2, in the region of the transport region R1 adjacent to the interface block C3, as shown in Fig. 7, a mount unit U6 is provided, which is located at a position where the transport arm A1 and the shuttle arm 84 which will be described later are accessible. The mount unit U6 is identical to the mount unit U5 and includes a transfer platform TRS and CPL.

A shuttle arm 84 is disposed on the upper portion of the DEV layer B1, and is a dedicated transport mechanism for transporting the wafer W directly from the transfer platform CPL of the mount unit U5 to the transfer platform CPL disposed on the mount unit U6. . The interface arm 85 is disposed in the interface block C3 to form a transmission mechanism for transferring the wafer W between each platform of the pedestal unit U6 and the exposure device C4.

Further, in the light source to which the exposure device C4 of the coating and developing device 8 is connected, for example, an ultraviolet ray (EUV) can be used, and the wavelength of the EUV is 13 nm to 14 nm.

The coating and developing device 8 includes a control unit 80 composed of, for example, a computer, and the control unit 80 is constituted by a program, a memory, a CPU, and the like. In the program, a command (each step) is incorporated, and the control signal is transmitted from the control unit 80 to each portion of the coating and developing device 1 to perform coating development processing to be described later. The program is stored in a memory portion of a computer memory medium such as a floppy disk, a compact disk, a hard disk, or an MO (magneto-optical disk), and is installed in the control unit 80.

Further, the control unit 80 includes an input screen (not shown) so that, for example, the operator of the apparatus can set the exposure amount in the energy supply unit 3 of the heating module 1 and the heating in the heating plate 41 for each batch of the wafer W. Processing conditions such as temperature. In response to the set exposure amount, the control signal is transmitted to the output adjustment unit 33 and the drive unit 25, and the light is irradiated from the light source unit 33 in response to the output, and the moving speed of the cooling plate 2 is controlled by the drive unit 25 to The wafer W on the cooling plate 2 is exposed to the set exposure amount.

Next, the reference frame shows a longitudinal sectional side view of the state in which the photoresist film formed on the surface of the wafer W is changed, and the effect of the coating and developing device 8 will be described. Further, in the photoresist film 91 of FIGS. 8(a) to 8(c), in order to facilitate the illustration, dots or oblique lines are given to the respective regions in accordance with the amount of energy supplied, and not only oblique lines are attached thereto. The area is represented by a section. First, the operator of the device 8 presets the heating temperature of each batch in the heating module 1, the exposure amount of the energy supply unit 3 of the batch, and the like. The exposure amount is set in accordance with the applied photoresist property and the exposure amount in the exposure device C4.

In this example, as shown in FIG. 9, the wafer W is coated with a positive-type chemically amplified photoresist, and the sum of the supplied energy is more than 11 mJ/cm ² to 12 mJ/cm ² , and is supplied when heated. The solubility of the region of energy to the developer is drastically increased, and the exposure device C4 is exposed to a predetermined pattern, for example, 7 mJ/cm ² as will be described later. In this example, the exposure amount (dose) will be supplied to the power supply unit 3 is set to 7mJ / cm ^2, for example Bishi than 12mJ / cm ² of energy toward the area of exposure to the exposure means of the supply of C4.

After the setting, for example, the carrier C containing the wafer W is placed on the mounting table 81 from the outside, and the wafer W from the carrier C is sequentially directed to the corresponding second block (BCT layer) B2 by the transfer arm 82. The delivery platform CPL2 delivers it. Block 2 (BCT layer) B2 The inner transfer arm A2 receives the wafer W from the transfer platform CPL2, and transports it to each module (anti-reflection film forming module and heating/cooling processing module group) to thereby use the module. An anti-reflection film is formed on the wafer W.

Thereafter, the wafer W is transmitted through the transfer platform BF2 of the mount unit U5, the transfer arm D1, the transfer platform CPL3 of the mount unit U5, and the transfer arm A3 to the third block (COT layer) B3, toward the COT layer B3. The coating unit transports it. A positive-type chemically amplified photoresist is supplied to the wafer W by the coating unit to form a photoresist film.

The wafer W on which the photoresist film is formed is transferred to the transfer platform BF3 in the mount unit U5 via the transport arm A3→the transfer platform BF3 of the mount unit U5→the transfer arm D1. Further, the wafer W on which the photoresist film is formed may be further formed with a protective film by the fourth block (TCT layer) B4. At this time, the wafer W is transferred to the transport arm A4 through the transfer platform CPL4, and is transferred to the transfer platform TRS4 by the transport arm A4 after the protective film is formed.

The wafer W on which the photoresist film or the protective film is formed is transferred from the transfer platforms BF3, TRS4 toward the transfer platform CPL11 through the transfer arm D1, and is directly transferred to the transfer platform U6 by the shuttle arm 84. The CPL 12 is transported and introduced into the interface block C3.

Next, the wafer W is transported to the exposure device C4 by the interface arm 85, and the light emitted from the non-illustrated light source is transmitted toward the wafer W through the exposure mask 92 including the predetermined opening portion 93. The surface is supplied to expose the region 94 of the photoresist film 91 corresponding to the opening portion 93. Further, for example, the mask 92 is horizontally moved to sequentially move the exposure region, and at the same time, the photoresist film 91 is exposed (pattern exposure) along a predetermined pattern (Fig. 8(a)). As described above, at this time, the energy supplied to the region 94 subjected to the pattern exposure is 7 mJ/cm ² , whereby the energy supply amount hardly generates acid in the exposed region, as shown in Fig. 9, even if the heat treatment is directly continued as it is. The development treatment also hardly dissolves in the developer.

The wafer W, which is finished by the exposure device C4 by the interface arm 85, is placed on the transfer platform TRS6 of the mount unit U6, and then transported to the heating module 1 of the mount unit U1 of the DEV layer B1 by the transport arm A1. It. When the lift pin 14 receives the wafer W, a voltage is applied to the electrode 22 of the cooling plate 2 on the front side (the side of the transfer port 12) of the heating module 1 by the power supply unit 23. Then, once the lift pins 14 are lowered, the wafer W is entirely adsorbed on the cooling plate 2. Then, the control unit 80 irradiates light from the light source 32 at an output corresponding to the exposure amount set in advance, and moves the cooling plate 2 toward the heating plate 41 under the light source 32 of the energy supply unit 3 at a speed corresponding to the exposure amount. The entire surface of the wafer W is irradiated with ultraviolet rays from the light source 32 to supply energy of 7 mJ/cm ² .

By exposure from the light source 32, as shown in the graph of Fig. 9, the sum of the energy supplied in the region 94 where the pattern exposure is first performed by the exposure device C4 is 14 mJ/cm ² , after which the PEB is caused after the region 94 has been caused. A sufficient acid catalyst reaction (chemical amplification reaction) at the time of the treatment produces a sufficient amount of acid to make the region 94 as a whole soluble during the development treatment. On the other hand, the exposure amount in the region 95 where the exposure device C4 is not exposed is stayed at 7 mJ/cm ² , so that the generation of acid is suppressed compared to the region 94 in which acid contact is not performed in the PEB treatment. In the reaction, the region 95 hardly dissolves during the development treatment.

When the cooling plate 2, which is held by the exposed wafer W by the energy supply unit 3, is placed on the heating plate 41, the light from the light source 32 is stopped, and the wafer W is transferred to the heating plate 41 through the lifting pin 16 to be cooled. The board 2 is returned to the front side of the heating module 1. Next, the lid body 51 is lowered to form a sealed processing space S. Next, N ₂ gas containing water vapor is supplied to the entire surface of the wafer W, and the N ₂ gas is sucked to the exhaust port 44 to be exhausted toward the circumferential direction of the wafer W. The wafer W is exposed to such a gas stream while heating it by the heat of the heating plate 41 to allow the acid catalyst reaction in the patterned exposed region 94 of the photoresist film 91 to proceed.

After the wafer W is placed on the heating plate 41 for a predetermined period of time, the supply of gas to the wafer W is stopped, and the wafer W is moved from the heating plate 41 toward the cooling plate in a reverse operation to the feeding operation of the processing container 50. 2, the wafer W cooled by the cooling plate 2 is transported toward the developing module DEV through the transport arm A1. When the developer is supplied as the DEV, as shown in FIG. 8(c), only the region 94 of the resist film 91 which has been subjected to the pattern exposure by the exposure device C4 is dissolved in the developer to form the pattern 96. Then, the wafer W is transferred to the transfer platform TRS1 of the mount unit U5 by the transfer arm A1, and then passed back to the carrier C through the transfer arm 82.

In the coating and developing device 8, the heating module 1 that performs PEB processing on the wafer W is provided with the energy supply unit 3 in the feeding region 19 for feeding the wafer W to the heating plate 41, so that exposure is formed along the predetermined pattern. The surface of the wafer W of the photoresist film is entirely exposed, and when the energy supply unit 3 is exposed thereto, a sufficient amount of acid is generated in the region where the exposure device C4 is exposed by the pattern, and the region is dissolved in the developer during the PEB treatment. On the other hand, in the region where the exposure device C4 is not exposed by the pattern, the solubility thereof hardly changes when the PEB treatment is performed. According to this configuration, the amount of energy supplied to each exposure amount region by the pattern exposure in the exposure device C4 is suppressed, so that the time required for the pattern exposure can be suppressed, and the exposure of the pattern in the photoresist film can be suppressed. The amount of acid produced. Further, the amount of acid can be quickly heated by the heating plate 41 after the amount of acid is increased in the region where the pattern is exposed by the energy supply portion 3. As a result, even after exposure by the exposure device C4, the time until delivery to the heating module is different for each wafer W, and the difference in acid distribution can be suppressed, and the shape of the photoresist pattern can be suppressed. The wafer W has a difference.

Further, since the wafer W is transported to the heating plate 41 by the cooling plate 2 and exposed by the energy supply unit 3, the amount of processing can be suppressed from being lowered. In this case, when the heating module 1 is configured as an atmospheric atmosphere, for example, when the wafer W is warped or the wafer W is deformed, when the distance between the light source 32 and each portion of the wafer W is different when the light source 32 is under the light source 32, there is a difference. Air causes energy to decay, and the difference is due to the energy supplied to the various parts of the wafer W. However, even if the warped wafer W is fed into the heating module 1 as described above, since the wafer W as a whole is adsorbed to the cooling plate 2, the wafer W as a whole is kept horizontal, so when the cooling plate 2 moves toward the heating plate 41, Since the distance between the light source 32 and the respective portions of the wafer W below it is also fixed, it is possible to suppress the difference in the supplied energy between the respective portions. Therefore, it is possible to more surely suppress the difference in the shape of the photoresist pattern of each wafer.

In the heating module 1, water vapor is supplied while the wafer W is being heated, and when the wafer W is heated by the heating plate 41, the acid in the exposed region 94 of the photoresist film 91 is diffused and activated. Therefore, compared with the case where no water vapor is supplied, even if the acid generated in the exposed region 94 is small, the region 94 can be made soluble to the developer, so that it is possible to achieve greater suppression of the photoresist by the exposure device C4. The energy of supply. When the energy supplied by the exposure device C4 is suppressed, the exposure in the exposure device C4 can be shortened. The light time shortens the time from the start of exposure to the end of exposure of one wafer W. Therefore, it is possible to suppress the uniformity of the distribution of the acid generated by the exposure of the exposure apparatus C4 in the in-plane of the wafer W by heating by the heating module 1, so that a pattern having high uniformity can be formed in the surface of the wafer W.

In order to fix the distance h1 between the light source 32 and the wafer W under the cooling plate, the cooling plate may be configured as a vacuum crucible as shown in FIGS. 10(a) and (b), for example. The cooling plate 101 of FIG. 10 includes a plurality of openings 102 on the surface, and the opening 102 is connected to one end of the exhaust pipe 104 through a flow path 103 in the cooling plate 101, and the other end of the exhaust pipe 104 is connected to constitute a suction mechanism. Injector 105. The ejector 105 receives the control signal output from the control unit 80, suctions it from the opening 102 at a predetermined flow rate, and adsorbs the wafer W on the cooling plate 101.

Further, the light source unit of the energy supply unit 3 is not limited to the one in which the light source 32 is irradiated with light to the wafer W. The light source unit 106 shown in FIG. 11( a ) is configured to emit light in a dot shape downward, and is attached to the base portion 31 through the transmission unit 107 . The driving portion 107 repeatedly moves back and forth at one end and the other end of the base portion 31 at a speed corresponding to the moving speed of the cooling plate 2, and as shown in Fig. 11(b), the entire wafer W transported onto the heating plate 41 can be irradiated with light.

The light source unit of the energy supply unit 3 is not limited to a short-wavelength light such as ultraviolet rays, and any person who irradiates the electron beam or irradiates the ion beam may be used as long as energy can be applied to the wafer W. In addition, in the exposure device C4, in addition to the EUV exposure, a conventionally used device including a KrF light source or an ArF light source may be used, and a liquid film may be formed on the wafer, and exposure may be performed through the liquid film. Liquid immersion exposure.

Second embodiment

Next, a second embodiment of the heating module for performing PEB will be described. FIG. 12 shows a longitudinal section of the heating module 111. The same components as those of the heating module 1 will be denoted by the same reference numerals and will not be described. In the heating module 111, the cooling plate 112 is not configured as an electrostatic chuck, and the energy supply unit 3 is not provided in the feeding region 19 for feeding the wafer W to the heating plate 41. The lid body 113 constituting the processing container 50 is configured similarly to the lid body 51. However, as shown in Fig. 13, the lid plate 113 constituting the processing container 50 has a plurality of needle electrodes 114 constituting the energy supply portion, and is protruded downward. A voltage is applied to the needle electrode 114 through the power supply unit 115 and through the rectifying plate 55, and the needle electrode 114 is applied to the processing space S by applying a voltage. A corona discharge is generated, and charged particles in the plasma generated by the discharge are supplied to the entire surface of the wafer W.

Fig. 14 (a) shows the lower surface of the rectifying plate 55, and the needle electrode 114 is, for example, arranged in a square lattice shape. Although the gas outflow port 54a is omitted in the drawing, the gas outflow port 54a is formed between the needle electrode 114 and the needle electrode 114, so that the gas can be supplied to the pair of wafers W. The arrangement of the needle electrodes 114 is not limited to this example, and may be arranged in a three-square lattice shape as shown, for example, in FIG. 14(b).

The distance between each of the needle electrodes 114 and the wafer W indicated by h2 in the figure and the voltage applied to the needle electrode 114 are set so that the desired energy can be applied to the wafer W without excessively supplying charged particles to the wafer W. The wafer W is damaged, for example, h2 is about 5 mm to 9 mm, and the voltage applied to the needle electrode 114 is ±2 kV to ±12 kV. The power source constituting the power source unit 115 may be a DC power source or an AC power source.

Further, the surface portion of the heating plate 41 may be configured as an electrostatic chuck 121, and the wafer W is heated by the heater 42 and transmitted through the electrostatic chuck 121. The electrostatic chuck 121 has the same surface as the cooling plate 2, and is formed of a dielectric material 122. The electrode 123 is embedded in the dielectric 122, and the electrode 123 is connected to the power supply unit 124. The mounting surface of the wafer W formed horizontally on the upper surface of the electrostatic chuck 121 is configured to adsorb the entire back surface of the wafer W, and maintains the entire wafer level as in the cooling plate 2. The amount of charged particle energy supplied to the wafer W can also be controlled by controlling the voltage applied to the wafer W from the electrostatic chuck 121. Further, a pin protruding from the electrostatic chuck 121 may be provided to cause the wafer W to slightly float from the surface of the electrostatic chuck 121, thereby controlling the voltage thus applied to the wafer W.

When the energy is supplied to the wafer W by the needle electrode 114, the energy is attenuated by air as in the case of exposure, and the distance between the needle electrode 114 and the wafer W changes, and the electric field strength changes due to the corona. The difference in the number of charged particles generated by the discharge causes the amount of energy supplied to the photoresist film of the wafer W to be different. Here, as described above, the wafer W is adsorbed by the electrostatic chuck 121 to keep the portions horizontal, and the distance h2 between the respective needle electrodes 114 and the wafer W under it is fixed to suppress the wafer W and the wafers. There is a difference in the energy supplied between them.

Next, the action of the heating module 111 will be described. As described above, once the exposed wafer W is exposed to the exposure device C3, the heating module 111 is fed through the cooling plate. 112, the wafer W is sent to the processing container 50, that is, a voltage is applied to the electrode 123 of the electrostatic chuck 121, and the wafer W placed on the electrostatic chuck 121 through the lift pin 16 is entirely adsorbed on the electrostatic chuck 121 by heating. The heat of the board 41 causes the wafer temperature to rise. Next, the lid body 113 is lowered to form a sealed processing space S, and the distance between the needle electrode 114 and the surface of the wafer W is kept constant.

A voltage is applied to the needle electrode 114 by the power supply unit 115 to generate a corona discharge, and charged particles in the plasma generated by the discharge are supplied to the entire surface of the wafer W. For example, when the energy of 7 mJ/cm ² is supplied and the acid in the region exposed by the exposure device C4 is increased, the discharge is stopped. Since the wafer W is heated, the acid generated is diffused in the exposed portion of the exposure device C4, causing a chemical amplification reaction. After the self-loading of the heating plate 41 for a predetermined period of time, the wafer W is sent out from the processing container 50 in the same manner as in the first embodiment.

Even in such a configuration, since the energy supplied to the region along the pattern reaches a predetermined amount, after the acid is generated in the region, the acid is heated and diffused, so that the self-exposure can be suppressed as in the above embodiment. After the acid is generated, the time until the PEB treatment is performed is different for each wafer. Therefore, it is possible to suppress the shape of the photoresist pattern from causing a difference in each wafer. By supplying the charged particles and performing the PEB treatment at the same time, the processing time can be reduced, and the processing time can be shortened, whereby the sublimate suppressing the generation of the heating photoresist can be adhered to the rectifying plate 55 or the lid 51, thereby suppressing The attached sublimate falls on the wafer W as particles.

In this embodiment, the point at which the voltage is applied to the needle electrode 114 and the point at which the application of the voltage is stopped are not limited to the above examples, and it is preferable to carry out the chemical amplification promoting effect to be obtained. For example, charged particles may be supplied to the wafer W, and the temperature of the heating plate 41 may be raised and the PEB treatment may be performed after the supply is stopped.

In the modification of the second embodiment, as shown in Figs. 15(a) and 15(b), a plurality of the lower portions of the support portion 125 in the lid body 51 may be arranged on the straight line along the longitudinal direction of the support portion 125. The needle electrode 114 is horizontally moved through the support portion 125 so as to be perpendicular to the arrangement direction to supply charged particles to the entire wafer W. Further, as shown by an arrow in FIG. 16, the support portion 126 provided with one needle electrode 114 below it may be vertically and horizontally moved to supply charged particles to the entire wafer W.

Further, in the second embodiment, instead of providing the needle electrode 114 in the lid 51, a light source that emits, for example, ultraviolet light may be provided to perform exposure, and the entire wafer W may be exposed. In the first embodiment, the charged particles can be supplied by the needle electrode 114. For example, as shown in Figs. 17(a) and 17(b), the needle electrode 114 is provided on the lower portion of the base portion 31, and the wafer W passing under the needle electrode 114 can be applied. Supply charged particles.

Further, in the second embodiment, the surface of the heating plate 41 may not be formed as the electrostatic chuck 121, and instead, as shown in FIG. 18, the back surface of the wafer W may be sucked toward the mounting surface 120 of the heating plate 41, and The cooling plate 101 constitutes the same vacuum crucible 127 to keep the wafer W horizontal. In the figure, 128 is an opening portion in which a large number of openings are formed in the surface of the vacuum crucible 127, and the back surface of the wafer W is sucked from the opening portion 128 through the exhaust pipe 104. Further, in the second embodiment and its modifications, water vapor may be supplied while the wafer W is being heated.

In each of the above-described embodiments, the case where the total amount of energy supplied by exposure or the like exceeds the specific range, and the positive-type photoresist which is dissolved in the region where the energy is supplied during development is described, but the coating may be supplied. When the total amount of energy exceeds the intrinsic range, the region where the energy is supplied is an insoluble negative photoresist at the time of development.

(evaluation test)

Evaluation test 1

Preparing a plurality of wafers W on which a photoresist film is formed on the surface thereof, and exposing each wafer to a different exposure amount along a predetermined pattern using the exposure apparatus described above, respectively Different exposure amounts (dose) exposure, and after PEB, development treatment. Further, the change in the solubility to the developer was observed, and it was investigated how much the total exposure amount was required to minimize the change in the solubility of the developer in the region exposed to the pattern with a predetermined exposure amount.

As shown in FIG. 19, the pattern exposure amount and the total exposure amount were respectively set on the vertical axis and the horizontal axis, and the above test results were displayed at angular points to make a picture. Further, when the total exposure amount was 0 mJ/cm ² , full exposure was not performed, and exposure was performed only by the exposure device. As shown, if the exposure amount along the pattern is small, the required total exposure amount is increased. In other words, if the total exposure is increased, the amount of exposure along the pattern can be reduced. Therefore, according to the present invention, by performing the step of performing overall exposure after pattern exposure, the amount of exposure in the exposure apparatus can be suppressed, and the display can realize the amount of lifting processing. Further, as a reference test, the wafer W was exposed as a whole and then subjected to pattern exposure by an exposure device. As in the evaluation test 1, the lowest value of the pattern exposure amount required to change the solubility of the developer was examined, and the result was obtained. The picture is drawn as a spherical point. It has also been found from the results of the reference test that the amount of pattern exposure required to change the solubility of the developer is correlated with the total exposure amount.

Evaluation test 2

The wafer W coated with the negative-type electron beam exposure photoresist is placed on the heating plate 41 of the sealed processing container 130 as shown in FIG. 20(a). Further, a voltage is applied to the needle electrode 114 disposed at the center of the wafer W to supply the charged particles to the wafer W, and then PEB processing is performed. The distance h3 between the heating plate 41 and the needle electrode 114 is 7.5 mm, and the distance h4 between the top plate of the processing container 130 and the heating plate 41 is 16.5 mm. The voltage applied to the needle electrode 114 is set to be +12 kV when processing a wafer, and -12 kV when processing other wafers.

Observing the PEB-treated wafer W, it is known that the diffusion of acid can be seen either when a voltage of +12 kV is applied or when a voltage of -12 kV is applied. Therefore, it can be confirmed that, as in the above embodiment, exposure by the heating module is not performed, and energy is supplied to the photoresist by charged particles instead.

Evaluation test 3

Next, a plurality of wafers W stacked from bottom to top in the order of the antireflection film, the photoresist film, and the protective film are used, and the charged electrodes are supplied to the center thereof using the needle electrode 114 as shown in Figs. 20(b) and (c). The distance h5 between the needle electrode 114 and the wafer W is 7.5 mm, and the voltage applied to the needle electrode 114 is set to +12 kV when processing a certain wafer W, and -12 kV when other wafers W are processed. Although the wafer W was subjected to the photoresist film formation post-heat treatment (PAB), the exposure treatment was not performed. After the charged particles were supplied, PEB treatment was performed at 115 ° C for 60 seconds to carry out development treatment, and then the center of the wafer W was observed.

A chemical amplification reaction can be observed near the center of the wafer W when a voltage is applied at +12 kV or when a voltage is applied at -12 kV. Therefore, it has also been found from this evaluation test that it is shown that the charged particles are supplied instead of exposure, and the acid in the photoresist can be increased as in the case of performing exposure.

A1~A4‧‧‧Transport arm

B1‧‧‧1st block (DEV layer)

B2‧‧‧ Block 2 (BCT layer)

B3‧‧‧ Block 3 (COT layer)

B4‧‧‧ Block 4 (TCT layer)

BF, BF2, BF3, CPL, CPL2, CPL3, CPL4, CPL11, CPL12, TRS, TRS1~TRS6‧‧‧ delivery platform

C1‧‧‧ carrying block

C2‧‧‧Processing block

C3‧‧‧Interface block

C4‧‧‧Exposure device

C‧‧‧ Carrier

D1‧‧‧Transfer arm

DEV‧‧‧Development Module

H1~h5‧‧‧distance

R1‧‧‧ delivery area

S‧‧‧ processing space

U1~U6‧‧‧ pedestal unit

W‧‧‧ wafer

1, 111‧‧‧ heating module

2, 101, 112‧‧‧ cooling plate

3‧‧‧Energy Supply Department

8‧‧‧ coating and developing device (device)

11‧‧‧ frame

12‧‧‧ delivery port

13‧‧‧ partition board

14, 16‧‧ ‧ lift pins

15, 17‧‧‧ Lifting mechanism

18‧‧‧ slit

19‧‧‧Send area

20, 40, 120‧‧‧ mounting surface

21‧‧‧ Surface

22, 123‧‧‧ electrodes

23, 115, 124‧‧‧ Power Supply Department

24, 125, 126‧ ‧ support department

25, 107‧‧‧ Drive Department

31‧‧‧ base

32, 106‧‧‧Light source (light source department)

33‧‧‧Output Adjustment Department

41‧‧‧heating plate

41a, 41b‧‧‧ Supporting components

42‧‧‧heater

43‧‧‧Exhaust Department

44‧‧‧Exhaust port

45‧‧‧Exhaust flow path

46, 104‧‧‧ exhaust pipe

47‧‧‧Exhaust mechanism

48‧‧‧Blocking members

50, 130‧‧‧Processing containers

51, 113‧‧‧ cover

51a‧‧‧Support components

52‧‧‧ Lifting mechanism

54, 55‧‧‧Rectifier Board

54a, 55a‧‧‧ gas outlet

56‧‧‧1st circulation room

57‧‧‧2nd circulation room

58‧‧‧ heating department

61, 65, 68‧‧‧ gas supply pipe

61a‧‧‧Roller heater

62‧‧‧ Container

63‧‧‧temperature sensor

64‧‧‧Wrapped heater

64a‧‧‧heater

64b‧‧‧Insulation

64c‧‧‧External Department

65‧‧‧ branch tube

66‧‧‧Gas supply machine group

67‧‧‧Nozzles

69‧‧‧ gas supply source

80‧‧‧Control Department

81‧‧‧ mounting table

82‧‧‧Transfer arm

83‧‧‧Development module

84‧‧‧ shuttle arm

85‧‧‧Interface arm

91‧‧‧Photoresist film

92‧‧‧Exposure mask (mask)

93, 102, 128‧‧‧ openings

94, 95‧‧‧ areas

96‧‧‧ pattern

103‧‧‧Flow

105‧‧‧Injector

114‧‧‧needle electrode

121‧‧‧Electrostatic suction cup

122‧‧‧Dielectric

127‧‧‧vacuum

Fig. 1 is a longitudinal sectional side view showing a heating module according to a first embodiment of the coating and developing device of the present invention.

2 is a cross-sectional plan view of the heating module.

3(a) and 3(b) are explanatory views showing a state in which the wafer is exposed by the heating module.

Fig. 4 is an explanatory view showing a state in which the wafer is heated by the heating module.

Fig. 5 is a plan view of the coating and developing device.

Fig. 6 is a perspective view of the coating and developing device.

Figure 7 is a longitudinal sectional side view of the coating and developing device.

8(a), (b) and (c) are longitudinal sectional side views of a photoresist film formed by the coating and developing apparatus.

Fig. 9 is a graph showing the relationship between the amount of exposure of the photoresist and the amount of dissolution to the developer.

Fig. 10 (a) and (b) are longitudinal sectional side views showing other structural examples of the cooling plate in the heating module.

11(a) and 11(b) are longitudinal sectional side views showing other structural examples of the surface exposed portion of the heating module.

Fig. 12 is a longitudinal sectional side view showing the heating module according to the second embodiment.

Figure 13 is a longitudinal sectional side view of the cover of the heating module.

14(a) and 14(b) are plan views showing an example of arrangement of the needle electrodes provided in the lid body.

15(a) and 15(b) are explanatory views showing other configuration examples of the needle electrode of the heating module.

Fig. 16 is an explanatory view showing another configuration example of the needle electrode of the heating module.

17(a) and 17(b) are diagrams showing a configuration in which the needle electrode is applied to the first embodiment.

Fig. 18 is an explanatory view showing another configuration example of the heating module.

Fig. 19 is a graph showing the results of the evaluation test.

20(a), (b) and (c) are schematic views showing the configuration of the apparatus used in the evaluation test.

W‧‧‧ wafer

2‧‧‧Cooling plate

3‧‧‧Energy Supply Department

11‧‧‧ frame

12‧‧‧ delivery port

13‧‧‧ partition board

16‧‧‧lifting pin

15, 17‧‧‧ Lifting mechanism

19‧‧‧Send area

20, 40‧‧‧ mounting surface

21‧‧‧ Surface

23‧‧‧Power Supply Department

24‧‧‧Support Department

25‧‧‧ Drive Department

31‧‧‧ base

32‧‧‧Light source (light source unit)

33‧‧‧Output Adjustment Department

41‧‧‧heating plate

41a‧‧‧Support components

42‧‧‧heater

43‧‧‧Exhaust Department

44‧‧‧Exhaust port

45‧‧‧Exhaust flow path

46‧‧‧Exhaust pipe

47‧‧‧Exhaust mechanism

48‧‧‧Blocking members

50‧‧‧Processing container

51‧‧‧ cover

51a‧‧‧Support components

52‧‧‧ Lifting mechanism

61, 65, 68‧‧‧ gas supply pipe

61a‧‧‧Roller heater

62‧‧‧ Container

63‧‧‧temperature sensor

64‧‧‧Wrapped heater

64a‧‧‧heater

64b‧‧‧Insulation

64c‧‧‧External Department

65‧‧‧ branch tube

66‧‧‧Gas supply machine group

67‧‧‧Nozzles

69‧‧‧ gas supply source

80‧‧‧Control Department

Claims (19)

A coating and developing device comprising: a coating module for applying a chemically amplified photoresist to a surface of a substrate to form a photoresist film, wherein the chemically amplified photoresist is caused by the total amount of energy supplied being more than an inherent range and being heated The solubility of the developer in the region subjected to the energy supply is changed; the transfer mechanism receives the substrate exposed to the exposure device in such a manner that the amount of energy supplied to the photoresist film does not exceed the intrinsic range; The module includes: an energy supply unit that transmits the exposed substrate by the transmission mechanism, and supplies energy to the entire photoresist film, the amount of the energy does not exceed the inherent range, and the energy supplied during the exposure The sum of the amounts exceeds the intrinsic range; and the heating plate heats the substrate to change the solubility; and the developing module develops the heated substrate of the heating module to form a pattern on the photoresist film; The energy supply unit supplies energy to the substrate that is fed into the heating plate or supplies energy to the substrate placed on the heating plate. The coating and developing device of claim 1, wherein the heating module comprises a conveying mechanism that conveys the substrate received from the transmitting mechanism toward the heating plate, and the energy supply portion is conveyed by the conveying mechanism The substrate is supplied with energy. The coating and developing device according to claim 2, wherein the conveying mechanism includes a mounting surface on which the substrate is placed, and includes a suction mechanism for controlling the distance from the energy supply mechanism to the substrate, and adsorbing the substrate to the carrier Set the surface. The coating and developing device according to claim 3, wherein the adsorption mechanism comprises an electrostatic chuck for electrostatically adsorbing the substrate, and the mounting surface is formed by the surface of the electrostatic chuck. The coating and developing device according to claim 3, wherein the suction mechanism constitutes the suction mechanism, and the suction mechanism sucks the back surface of the substrate to adsorb the substrate to the mounting surface. A coating and developing apparatus according to claim 3, wherein the conveying mechanism is a cooling plate that mounts a substrate heated by the heating plate and cools the substrate. The coating and developing device according to claim 1, wherein the energy supply portion is disposed to face the heating plate to supply energy to the substrate placed on the heating plate. . The coating and developing device according to claim 5, wherein the heating plate includes an adsorption mechanism for adsorbing the substrate on the mounting surface in order to control a distance from the energy supply portion to the substrate. The coating and developing device of claim 8, wherein the adsorption mechanism comprises an electrostatic chuck for electrostatically adsorbing the substrate, and the mounting surface is formed by the surface of the electrostatic chuck. The coating and developing device according to claim 8, wherein the suction mechanism constitutes the suction mechanism, and the suction mechanism sucks the back surface of the substrate to adsorb the substrate to the mounting surface. The coating and developing device of claim 1, wherein the energy supply portion includes a light source for exposing the substrate. A coating and developing apparatus according to claim 1, wherein the energy supply unit is configured by a charged particle supply source that generates a discharge on the substrate to supply charged particles to the substrate. A coating and developing apparatus according to claim 12, wherein the charged particle supply source is constituted by an electrode, and the electrode is formed in a needle shape extending downward to cause discharge on the substrate. The coating and developing device according to claim 1, wherein the heating plate is provided in a processing container, and the processing container contains a water vapor supply mechanism to supply water vapor. A coating development method comprising the steps of: applying a chemically amplified photoresist to a surface of a substrate to form a photoresist film, the chemically amplified photoresist being exposed to the total amount of energy supplied and being heated a change in the solubility of the developer in the region of the energy supply; the transfer mechanism is exposed to the exposure device by transmitting the photoresist to the heating module through the transfer mechanism so that the energy supplied to the photoresist does not exceed the range a substrate; the energy supply unit provided in the heating module supplies energy to the entire substrate of the substrate that is fed into the heating plate or the substrate that is placed on the heating plate, The amount of energy does not exceed the intrinsic range, and the sum of the amounts of energy supplied during the exposure exceeds the intrinsic range; the substrate is placed on a heating plate provided in the heating module; heated by the heating plate The substrate is modified to change the solubility; and the substrate heated by the heating module is developed to form a pattern on the photoresist film. The coating and developing method of claim 15 includes a step of transporting the exposed substrate through the feeding region toward the heating plate by a conveying mechanism provided in the heating module. The step of supplying energy by the energy supply unit is performed on the substrate transported by the transport mechanism. The coating development method of claim 16, wherein the step of supplying energy by the energy supply unit is performed after the step of placing the substrate on the heating plate provided in the heating module. The coating and developing method according to claim 17, wherein the step of supplying energy by the energy supply unit is carried out by performing a step of heating the substrate on the substrate placed on the heating plate by a heating plate. A memory medium having a computer program for coating a developing device, the coating and developing device comprising: a coating module, applying a chemically amplified photoresist to a surface of the substrate to form a photoresist film, the chemical amplification type photoresist The solubility of the developer in the region subjected to the energy supply is changed because the total amount of energy supplied exceeds the intrinsic range and is heated; the transmitting mechanism receives the light that is supplied to the exposure device to supply the light to the photoresist a substrate that is exposed along the pattern in a manner not exceeding the intrinsic range; the heating module includes a heating plate that heats the substrate that is transferred by the transfer mechanism; and the developing module that heats the substrate of the heating module Developing to form a pattern on the photoresist film; the memory medium is characterized by: The computer program is used to carry out the coating development method according to any one of claims 15 to 18.