TWI441235B - 用以連結腔室組件的自我鈍化抗電漿材料 - Google Patents

用以連結腔室組件的自我鈍化抗電漿材料 Download PDF

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Publication number
TWI441235B
TWI441235B TW100111614A TW100111614A TWI441235B TW I441235 B TWI441235 B TW I441235B TW 100111614 A TW100111614 A TW 100111614A TW 100111614 A TW100111614 A TW 100111614A TW I441235 B TWI441235 B TW I441235B
Authority
TW
Taiwan
Prior art keywords
bonding material
chamber component
plasma
gas distribution
chamber
Prior art date
Application number
TW100111614A
Other languages
English (en)
Chinese (zh)
Other versions
TW201140642A (en
Inventor
孫珍妮佛Ｙ
徐理
薩奇山恩
麥克唐諾凱利Ａ
克拉克羅伯史考特
Original Assignee
應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 應用材料股份有限公司 filed Critical 應用材料股份有限公司
Publication of TW201140642A publication Critical patent/TW201140642A/zh
Application granted granted Critical
Publication of TWI441235B publication Critical patent/TWI441235B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/403—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04D—NON-POSITIVE-DISPLACEMENT PUMPS
    • F04D17/00—Radial-flow pumps, e.g. centrifugal pumps; Helico-centrifugal pumps
    • F04D17/08—Centrifugal pumps
    • F04D17/16—Centrifugal pumps for displacing without appreciable compression
    • F04D17/168—Pumps specially adapted to produce a vacuum
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)
TW100111614A 2006-08-01 2007-08-01 用以連結腔室組件的自我鈍化抗電漿材料 TWI441235B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/461,689 US7718029B2 (en) 2006-08-01 2006-08-01 Self-passivating plasma resistant material for joining chamber components

Publications (2)

Publication Number Publication Date
TW201140642A TW201140642A (en) 2011-11-16
TWI441235B true TWI441235B (zh) 2014-06-11

Family

ID=38705022

Family Applications (2)

Application Number Title Priority Date Filing Date
TW100111614A TWI441235B (zh) 2006-08-01 2007-08-01 用以連結腔室組件的自我鈍化抗電漿材料
TW096128277A TWI350550B (en) 2006-08-01 2007-08-01 Self-passivating plasma resistant material for joining chamber components

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW096128277A TWI350550B (en) 2006-08-01 2007-08-01 Self-passivating plasma resistant material for joining chamber components

Country Status (6)

Country Link
US (1) US7718029B2 (https=)
EP (1) EP1884979A3 (https=)
JP (1) JP4628405B2 (https=)
KR (1) KR101095752B1 (https=)
CN (1) CN101134879B (https=)
TW (2) TWI441235B (https=)

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WO2005097338A1 (ja) * 2004-04-08 2005-10-20 Matsushita Electric Works, Ltd. 静電霧化装置
US7838800B2 (en) * 2006-09-25 2010-11-23 Tokyo Electron Limited Temperature controlled substrate holder having erosion resistant insulating layer for a substrate processing system
DE112008002167B4 (de) * 2007-04-26 2014-02-06 Panasonic Corporation Kühlschrank und elektrische Vorrichtung
CN101952952B (zh) * 2008-02-26 2013-01-30 京瓷株式会社 晶片支承部及其制造方法、以及使用该晶片的静电夹头
US8194384B2 (en) * 2008-07-23 2012-06-05 Tokyo Electron Limited High temperature electrostatic chuck and method of using
US8147648B2 (en) * 2008-08-15 2012-04-03 Lam Research Corporation Composite showerhead electrode assembly for a plasma processing apparatus
US20100140222A1 (en) * 2008-12-10 2010-06-10 Sun Jennifer Y Filled polymer composition for etch chamber component
US9520314B2 (en) * 2008-12-19 2016-12-13 Applied Materials, Inc. High temperature electrostatic chuck bonding adhesive
CN103201823B (zh) * 2010-11-15 2017-10-24 应用材料公司 用于连接腔室部件的附着材料
CN107527854A (zh) * 2012-04-26 2017-12-29 应用材料公司 针对防止静电夹盘的黏接粘合剂侵蚀的方法及设备
US9666466B2 (en) * 2013-05-07 2017-05-30 Applied Materials, Inc. Electrostatic chuck having thermally isolated zones with minimal crosstalk
US9583369B2 (en) 2013-07-20 2017-02-28 Applied Materials, Inc. Ion assisted deposition for rare-earth oxide based coatings on lids and nozzles
US9725799B2 (en) 2013-12-06 2017-08-08 Applied Materials, Inc. Ion beam sputtering with ion assisted deposition for coatings on chamber components
US10570257B2 (en) 2015-11-16 2020-02-25 Applied Materials, Inc. Copolymerized high temperature bonding component

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US5074456A (en) * 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
US6073577A (en) * 1998-06-30 2000-06-13 Lam Research Corporation Electrode for plasma processes and method for manufacture and use thereof
TW399264B (en) * 1998-11-27 2000-07-21 United Microelectronics Corp Method for reducing the fluorine content on metal pad surface
US6508911B1 (en) * 1999-08-16 2003-01-21 Applied Materials Inc. Diamond coated parts in a plasma reactor
JP2001226656A (ja) * 2000-02-16 2001-08-21 Tomoegawa Paper Co Ltd 半導体製造装置またはエッチング装置用接着剤、該装置用接着シート及びそれらを用いた構造部品
JP2002093777A (ja) * 2000-07-11 2002-03-29 Nisshinbo Ind Inc ドライエッチング装置
WO2002037541A2 (en) * 2000-11-01 2002-05-10 Applied Materials, Inc. Etch chamber for etching dielectric layer with expanded process window
US6797639B2 (en) * 2000-11-01 2004-09-28 Applied Materials Inc. Dielectric etch chamber with expanded process window
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US6682627B2 (en) 2001-09-24 2004-01-27 Applied Materials, Inc. Process chamber having a corrosion-resistant wall and method
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JP4047103B2 (ja) * 2002-08-29 2008-02-13 リンテック株式会社 貼着体
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Also Published As

Publication number Publication date
JP4628405B2 (ja) 2011-02-09
TW201140642A (en) 2011-11-16
KR101095752B1 (ko) 2011-12-21
TWI350550B (en) 2011-10-11
KR20080012230A (ko) 2008-02-11
CN101134879A (zh) 2008-03-05
JP2008103681A (ja) 2008-05-01
US7718029B2 (en) 2010-05-18
TW200830349A (en) 2008-07-16
EP1884979A3 (en) 2008-02-27
US20080029211A1 (en) 2008-02-07
CN101134879B (zh) 2011-11-02
EP1884979A2 (en) 2008-02-06

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