JP4628405B2 - 半導体処理チャンバコンポーネント - Google Patents

半導体処理チャンバコンポーネント Download PDF

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Publication number
JP4628405B2
JP4628405B2 JP2007199011A JP2007199011A JP4628405B2 JP 4628405 B2 JP4628405 B2 JP 4628405B2 JP 2007199011 A JP2007199011 A JP 2007199011A JP 2007199011 A JP2007199011 A JP 2007199011A JP 4628405 B2 JP4628405 B2 JP 4628405B2
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JP
Japan
Prior art keywords
processing chamber
semiconductor processing
halogen
bonding material
chamber component
Prior art date
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Expired - Fee Related
Application number
JP2007199011A
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English (en)
Japanese (ja)
Other versions
JP2008103681A5 (https=
JP2008103681A (ja
Inventor
ワイ サン ジェニファー
スウ リー
サッチ セン
エイ マクドナウ ケリー
スコット クラーク ロバート
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2008103681A publication Critical patent/JP2008103681A/ja
Publication of JP2008103681A5 publication Critical patent/JP2008103681A5/ja
Application granted granted Critical
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Expired - Fee Related legal-status Critical Current
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/403—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04D—NON-POSITIVE-DISPLACEMENT PUMPS
    • F04D17/00—Radial-flow pumps, e.g. centrifugal pumps; Helico-centrifugal pumps
    • F04D17/08—Centrifugal pumps
    • F04D17/16—Centrifugal pumps for displacing without appreciable compression
    • F04D17/168—Pumps specially adapted to produce a vacuum
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)
JP2007199011A 2006-08-01 2007-07-31 半導体処理チャンバコンポーネント Expired - Fee Related JP4628405B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/461,689 US7718029B2 (en) 2006-08-01 2006-08-01 Self-passivating plasma resistant material for joining chamber components

Publications (3)

Publication Number Publication Date
JP2008103681A JP2008103681A (ja) 2008-05-01
JP2008103681A5 JP2008103681A5 (https=) 2010-07-08
JP4628405B2 true JP4628405B2 (ja) 2011-02-09

Family

ID=38705022

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007199011A Expired - Fee Related JP4628405B2 (ja) 2006-08-01 2007-07-31 半導体処理チャンバコンポーネント

Country Status (6)

Country Link
US (1) US7718029B2 (https=)
EP (1) EP1884979A3 (https=)
JP (1) JP4628405B2 (https=)
KR (1) KR101095752B1 (https=)
CN (1) CN101134879B (https=)
TW (2) TWI350550B (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7874503B2 (en) * 2004-04-08 2011-01-25 Panasonic Electric Works Co., Ltd. Electrostatcially atomizing device
US7838800B2 (en) * 2006-09-25 2010-11-23 Tokyo Electron Limited Temperature controlled substrate holder having erosion resistant insulating layer for a substrate processing system
GB2459595B (en) * 2007-04-26 2011-03-23 Panasonic Corp A Refrigerator with Means to Provide Mist into a Storage Compartment
KR101259484B1 (ko) * 2008-02-26 2013-05-06 쿄세라 코포레이션 웨이퍼 지지 부재와 그 제조 방법, 및 이것을 사용한 정전 척
US8194384B2 (en) * 2008-07-23 2012-06-05 Tokyo Electron Limited High temperature electrostatic chuck and method of using
US8147648B2 (en) 2008-08-15 2012-04-03 Lam Research Corporation Composite showerhead electrode assembly for a plasma processing apparatus
US20100140222A1 (en) * 2008-12-10 2010-06-10 Sun Jennifer Y Filled polymer composition for etch chamber component
US9520314B2 (en) * 2008-12-19 2016-12-13 Applied Materials, Inc. High temperature electrostatic chuck bonding adhesive
CN103201823B (zh) * 2010-11-15 2017-10-24 应用材料公司 用于连接腔室部件的附着材料
KR20150013627A (ko) * 2012-04-26 2015-02-05 어플라이드 머티어리얼스, 인코포레이티드 Ｅｓｃ 본딩 접착제 부식을 방지하기 위한 방법들 및 장치
US9666466B2 (en) * 2013-05-07 2017-05-30 Applied Materials, Inc. Electrostatic chuck having thermally isolated zones with minimal crosstalk
US9583369B2 (en) 2013-07-20 2017-02-28 Applied Materials, Inc. Ion assisted deposition for rare-earth oxide based coatings on lids and nozzles
US9725799B2 (en) 2013-12-06 2017-08-08 Applied Materials, Inc. Ion beam sputtering with ion assisted deposition for coatings on chamber components
US10570257B2 (en) 2015-11-16 2020-02-25 Applied Materials, Inc. Copolymerized high temperature bonding component

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5074456A (en) 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
US6073577A (en) * 1998-06-30 2000-06-13 Lam Research Corporation Electrode for plasma processes and method for manufacture and use thereof
TW399264B (en) * 1998-11-27 2000-07-21 United Microelectronics Corp Method for reducing the fluorine content on metal pad surface
US6508911B1 (en) 1999-08-16 2003-01-21 Applied Materials Inc. Diamond coated parts in a plasma reactor
JP2001226656A (ja) * 2000-02-16 2001-08-21 Tomoegawa Paper Co Ltd 半導体製造装置またはエッチング装置用接着剤、該装置用接着シート及びそれらを用いた構造部品
JP2002093777A (ja) 2000-07-11 2002-03-29 Nisshinbo Ind Inc ドライエッチング装置
US6716302B2 (en) 2000-11-01 2004-04-06 Applied Materials Inc. Dielectric etch chamber with expanded process window
WO2002037541A2 (en) * 2000-11-01 2002-05-10 Applied Materials, Inc. Etch chamber for etching dielectric layer with expanded process window
US20030029563A1 (en) * 2001-08-10 2003-02-13 Applied Materials, Inc. Corrosion resistant coating for semiconductor processing chamber
US6682627B2 (en) 2001-09-24 2004-01-27 Applied Materials, Inc. Process chamber having a corrosion-resistant wall and method
JP3784682B2 (ja) * 2001-09-26 2006-06-14 富士通株式会社 伝送装置
US7048814B2 (en) 2002-02-08 2006-05-23 Applied Materials, Inc. Halogen-resistant, anodized aluminum for use in semiconductor processing apparatus
JP4047103B2 (ja) * 2002-08-29 2008-02-13 リンテック株式会社 貼着体
US6983692B2 (en) * 2003-10-31 2006-01-10 Hewlett-Packard Development Company, L.P. Printing apparatus with a drum and screen
JP2005154531A (ja) * 2003-11-25 2005-06-16 Lintec Corp 低アウトガス粘着シート
US6983892B2 (en) 2004-02-05 2006-01-10 Applied Materials, Inc. Gas distribution showerhead for semiconductor processing

Also Published As

Publication number Publication date
KR101095752B1 (ko) 2011-12-21
TWI441235B (zh) 2014-06-11
TWI350550B (en) 2011-10-11
TW200830349A (en) 2008-07-16
US20080029211A1 (en) 2008-02-07
TW201140642A (en) 2011-11-16
CN101134879A (zh) 2008-03-05
CN101134879B (zh) 2011-11-02
EP1884979A3 (en) 2008-02-27
US7718029B2 (en) 2010-05-18
KR20080012230A (ko) 2008-02-11
EP1884979A2 (en) 2008-02-06
JP2008103681A (ja) 2008-05-01

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