CN101134879B - 用于连接腔室部件的自钝化耐等离子体腐蚀材料 - Google Patents

用于连接腔室部件的自钝化耐等离子体腐蚀材料 Download PDF

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Publication number
CN101134879B
CN101134879B CN2007101428789A CN200710142878A CN101134879B CN 101134879 B CN101134879 B CN 101134879B CN 2007101428789 A CN2007101428789 A CN 2007101428789A CN 200710142878 A CN200710142878 A CN 200710142878A CN 101134879 B CN101134879 B CN 101134879B
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CN
China
Prior art keywords
bonding material
halogen
metal filler
adhesive material
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN2007101428789A
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English (en)
Chinese (zh)
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CN101134879A (zh
Inventor
珍妮弗·Y·孙
丽·许
塞恩·撒奇
凯利·A·麦克多诺
罗伯特·斯科特·克拉克
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Applied Materials Inc
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Applied Materials Inc
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Publication date
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Publication of CN101134879A publication Critical patent/CN101134879A/zh
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Publication of CN101134879B publication Critical patent/CN101134879B/zh
Expired - Fee Related legal-status Critical Current
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/403—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04D—NON-POSITIVE-DISPLACEMENT PUMPS
    • F04D17/00—Radial-flow pumps, e.g. centrifugal pumps; Helico-centrifugal pumps
    • F04D17/08—Centrifugal pumps
    • F04D17/16—Centrifugal pumps for displacing without appreciable compression
    • F04D17/168—Pumps specially adapted to produce a vacuum
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)
CN2007101428789A 2006-08-01 2007-08-01 用于连接腔室部件的自钝化耐等离子体腐蚀材料 Expired - Fee Related CN101134879B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/461,689 US7718029B2 (en) 2006-08-01 2006-08-01 Self-passivating plasma resistant material for joining chamber components
US11/461,689 2006-08-01

Publications (2)

Publication Number Publication Date
CN101134879A CN101134879A (zh) 2008-03-05
CN101134879B true CN101134879B (zh) 2011-11-02

Family

ID=38705022

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007101428789A Expired - Fee Related CN101134879B (zh) 2006-08-01 2007-08-01 用于连接腔室部件的自钝化耐等离子体腐蚀材料

Country Status (6)

Country Link
US (1) US7718029B2 (https=)
EP (1) EP1884979A3 (https=)
JP (1) JP4628405B2 (https=)
KR (1) KR101095752B1 (https=)
CN (1) CN101134879B (https=)
TW (2) TWI350550B (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7874503B2 (en) * 2004-04-08 2011-01-25 Panasonic Electric Works Co., Ltd. Electrostatcially atomizing device
US7838800B2 (en) * 2006-09-25 2010-11-23 Tokyo Electron Limited Temperature controlled substrate holder having erosion resistant insulating layer for a substrate processing system
GB2459595B (en) * 2007-04-26 2011-03-23 Panasonic Corp A Refrigerator with Means to Provide Mist into a Storage Compartment
KR101259484B1 (ko) * 2008-02-26 2013-05-06 쿄세라 코포레이션 웨이퍼 지지 부재와 그 제조 방법, 및 이것을 사용한 정전 척
US8194384B2 (en) * 2008-07-23 2012-06-05 Tokyo Electron Limited High temperature electrostatic chuck and method of using
US8147648B2 (en) 2008-08-15 2012-04-03 Lam Research Corporation Composite showerhead electrode assembly for a plasma processing apparatus
US20100140222A1 (en) * 2008-12-10 2010-06-10 Sun Jennifer Y Filled polymer composition for etch chamber component
US9520314B2 (en) * 2008-12-19 2016-12-13 Applied Materials, Inc. High temperature electrostatic chuck bonding adhesive
CN103201823B (zh) * 2010-11-15 2017-10-24 应用材料公司 用于连接腔室部件的附着材料
KR20150013627A (ko) * 2012-04-26 2015-02-05 어플라이드 머티어리얼스, 인코포레이티드 Ｅｓｃ 본딩 접착제 부식을 방지하기 위한 방법들 및 장치
US9666466B2 (en) * 2013-05-07 2017-05-30 Applied Materials, Inc. Electrostatic chuck having thermally isolated zones with minimal crosstalk
US9583369B2 (en) 2013-07-20 2017-02-28 Applied Materials, Inc. Ion assisted deposition for rare-earth oxide based coatings on lids and nozzles
US9725799B2 (en) 2013-12-06 2017-08-08 Applied Materials, Inc. Ion beam sputtering with ion assisted deposition for coatings on chamber components
US10570257B2 (en) 2015-11-16 2020-02-25 Applied Materials, Inc. Copolymerized high temperature bonding component

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5074456A (en) * 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
US6063207A (en) * 1998-11-27 2000-05-16 United Semiconductor Corp. Surface treatment for bonding pad
US20030029563A1 (en) * 2001-08-10 2003-02-13 Applied Materials, Inc. Corrosion resistant coating for semiconductor processing chamber
EP1475820A1 (en) * 1998-06-30 2004-11-10 Lam Research Corporation Electrode for plasma processes and method for manufacture and use thereof
US20050003675A1 (en) * 2000-11-01 2005-01-06 Carducci James D. Dielectric etch chamber with expanded process window

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6508911B1 (en) 1999-08-16 2003-01-21 Applied Materials Inc. Diamond coated parts in a plasma reactor
JP2001226656A (ja) * 2000-02-16 2001-08-21 Tomoegawa Paper Co Ltd 半導体製造装置またはエッチング装置用接着剤、該装置用接着シート及びそれらを用いた構造部品
JP2002093777A (ja) 2000-07-11 2002-03-29 Nisshinbo Ind Inc ドライエッチング装置
WO2002037541A2 (en) * 2000-11-01 2002-05-10 Applied Materials, Inc. Etch chamber for etching dielectric layer with expanded process window
US6682627B2 (en) 2001-09-24 2004-01-27 Applied Materials, Inc. Process chamber having a corrosion-resistant wall and method
JP3784682B2 (ja) * 2001-09-26 2006-06-14 富士通株式会社 伝送装置
US7048814B2 (en) 2002-02-08 2006-05-23 Applied Materials, Inc. Halogen-resistant, anodized aluminum for use in semiconductor processing apparatus
JP4047103B2 (ja) * 2002-08-29 2008-02-13 リンテック株式会社 貼着体
US6983692B2 (en) * 2003-10-31 2006-01-10 Hewlett-Packard Development Company, L.P. Printing apparatus with a drum and screen
JP2005154531A (ja) * 2003-11-25 2005-06-16 Lintec Corp 低アウトガス粘着シート
US6983892B2 (en) 2004-02-05 2006-01-10 Applied Materials, Inc. Gas distribution showerhead for semiconductor processing

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5074456A (en) * 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
EP1475820A1 (en) * 1998-06-30 2004-11-10 Lam Research Corporation Electrode for plasma processes and method for manufacture and use thereof
US6063207A (en) * 1998-11-27 2000-05-16 United Semiconductor Corp. Surface treatment for bonding pad
US20050003675A1 (en) * 2000-11-01 2005-01-06 Carducci James D. Dielectric etch chamber with expanded process window
US20030029563A1 (en) * 2001-08-10 2003-02-13 Applied Materials, Inc. Corrosion resistant coating for semiconductor processing chamber

Also Published As

Publication number Publication date
JP4628405B2 (ja) 2011-02-09
KR101095752B1 (ko) 2011-12-21
TWI441235B (zh) 2014-06-11
TWI350550B (en) 2011-10-11
TW200830349A (en) 2008-07-16
US20080029211A1 (en) 2008-02-07
TW201140642A (en) 2011-11-16
CN101134879A (zh) 2008-03-05
EP1884979A3 (en) 2008-02-27
US7718029B2 (en) 2010-05-18
KR20080012230A (ko) 2008-02-11
EP1884979A2 (en) 2008-02-06
JP2008103681A (ja) 2008-05-01

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PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
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GR01 Patent grant
C56 Change in the name or address of the patentee
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Address after: American California

Patentee after: Applied Materials Inc.

Address before: American California

Patentee before: Applied Materials Inc.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20111102

Termination date: 20160801