TWI438455B - Substrate testing device - Google Patents

Substrate testing device Download PDF

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TWI438455B
TWI438455B TW101136949A TW101136949A TWI438455B TW I438455 B TWI438455 B TW I438455B TW 101136949 A TW101136949 A TW 101136949A TW 101136949 A TW101136949 A TW 101136949A TW I438455 B TWI438455 B TW I438455B
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wiring pattern
potential difference
wiring
inspection
wiring patterns
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TW101136949A
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Chinese (zh)
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TW201326853A (en
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Munehiro Yamashita
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Nidec Read Corp
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/06Measuring leads; Measuring probes
    • G01R1/067Measuring probes
    • G01R1/073Multiple probes
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/10Measuring sum, difference or ratio

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Testing Of Short-Circuits, Discontinuities, Leakage, Or Incorrect Line Connections (AREA)

Description

基板檢驗裝置Substrate inspection device

本發明係關於一基板檢驗裝置,檢驗關於設在被檢驗基板之複數配線圖案間之電氣特性。The present invention relates to a substrate inspection apparatus for inspecting electrical characteristics between a plurality of wiring patterns provided on a substrate to be inspected.

又,本發明不限於檢驗印刷配線基板,例如可適用於檢驗撓性基板、多層配線基板、液晶顯示器或電漿顯示器用電極板,及半導體封裝用封裝基板或薄膜載體等各種基板中之電氣配線,本說明書中,通稱此等各種配線基板為「基板」。Further, the present invention is not limited to the inspection of the printed wiring board, and can be applied, for example, to the inspection of the flexible wiring board, the multilayer wiring board, the liquid crystal display or the electrode board for a plasma display, and the electric wiring in various substrates such as a package substrate for a semiconductor package or a film carrier. In the present specification, the various wiring boards are referred to as "substrates".

於檢驗對象配線圖案間有細微的短路部時,若於配線圖案間產生一般的電位差,該細微的短路部即會因過電流而燒壞,因此有時會發生本來有絕緣不良等問題之被檢驗基板被誤判定為正常等問題。When there is a fine short-circuit portion between the wiring patterns to be inspected, if a general potential difference occurs between the wiring patterns, the fine short-circuit portion may be burnt due to an overcurrent, and thus there may be problems such as insulation failure. The problem that the substrate is erroneously determined to be normal is checked.

關於此點,作為習知之基板檢驗裝置,存在有下列者:階段性地使賦予配線圖案之電位差變化,藉此防止配線圖案之絕緣不良處等因過電流燒壞,並同時進行檢驗(例如專利文獻1)。In this regard, as a conventional substrate inspection device, there is a case where the potential difference applied to the wiring pattern is changed stepwise, thereby preventing over-current burnout at the insulation defect of the wiring pattern, and at the same time performing inspection (for example, a patent) Document 1).

例如,於第1階段短路檢驗中,設定賦予配線圖案間之電位差為鄰接之配線圖案間假性短路,或是因細微的細線部短路之極小短路部導通,且該極小短路部不因於該極小短路部流動之電流燒壞之值。於第2階段短路 檢驗中,設定賦予配線圖案間之電位差為高於第1階段電位差,且用來偵測因鄰接之配線圖案間之火花導致電流漏洩之值。For example, in the first-stage short-circuit test, the potential difference between the wiring patterns is set to be a false short circuit between the adjacent wiring patterns, or the small short-circuit portion is short-circuited due to the short thin portion, and the minimum short-circuit portion is not caused by The value of the current burned by a very small short circuit. Short circuit in stage 2 In the test, the potential difference between the wiring patterns is set to be higher than the potential difference of the first stage, and is used to detect a value of current leakage due to a spark between adjacent wiring patterns.

且就設在被檢驗基板之複數配線圖案進行檢驗時,無論是關於極小短路部之第1階段檢驗,及關於因火花導致電流漏洩之第2階段檢驗其中任一者,皆就複數配線圖案以相同順序設定其中任一配線圖案為檢驗對象之注目配線圖案。When the inspection is performed on the plurality of wiring patterns of the substrate to be inspected, the first stage inspection of the extremely small short-circuit portion and the second-stage inspection of the current leakage due to the spark are performed on the plurality of wiring patterns. The attention wiring pattern in which any of the wiring patterns is the inspection object is set in the same order.

更具體而言,例如無論在第1階段及第2階段中任一檢驗內,皆自配線面積大的配線圖案起依序設定為注目配線圖案。又,自複數配線圖案中配線面積大者起依序作為注目配線圖案設定,且對在各時點設定為注目配線圖案之配線圖案,與複數配線圖案中於該時點已被設定為注目配線圖案之配線圖案及於該檢驗內已曾被設定為注目配線圖案之配線圖案以外的配線圖案所構成之相對配線圖案之間賦予電位差,檢驗注目配線圖案與相對線配線圖案之間之電氣特性。又,自配線面積大之配線圖案起依序設定為注目配線圖案係因配線面積大的配線圖案賦予電位差及解除賦予時電荷之充放電需耗費時間,故減少對配線面積大的配線圖案賦予電位差(充放電)之次數以使檢驗速度高速化。More specifically, for example, in any of the first stage and the second stage, the wiring pattern having a large wiring area is sequentially set as the attention wiring pattern. In addition, since the wiring area of the plurality of wiring patterns is large, the wiring pattern is set as the attention wiring pattern, and the wiring pattern which is set as the attention wiring pattern at each time point is set as the attention wiring pattern at the time of the plurality of wiring patterns. A potential difference is applied between the wiring pattern and the wiring pattern formed by the wiring pattern other than the wiring pattern which has been set as the attention wiring pattern in the inspection, and the electrical characteristics between the attention wiring pattern and the opposing wiring pattern are checked. In addition, since the wiring pattern having a large wiring area is sequentially set to the attention of the wiring pattern, it takes time to apply a potential difference to the wiring pattern having a large wiring area and to charge and discharge the charge when the wiring is removed. Therefore, it is possible to reduce the potential difference of the wiring pattern having a large wiring area. The number of times (charge and discharge) is such that the inspection speed is increased.

【先前技術文獻】[Previous Technical Literature]

【專利文獻】[Patent Literature]

【專利文獻1】日本特開2008-139036號公報[Patent Document 1] Japanese Patent Laid-Open Publication No. 2008-139036

此種基板檢驗裝置需在短時間內對大量基板進行檢驗,故業界強烈要求檢驗速度高速化,就各注目配線圖案進行之各檢驗步驟所耗費之時間傾向於逐漸縮短。另一方面,檢驗速度之高速化亦傾向於易於偵測到起因於 用來進行檢驗之充放電之所不希望的電流的變化,招致檢驗結果誤判定。因此,如何在不降低檢驗可靠度之情況下實現檢驗速度高速化成為一課題。Such a substrate inspection apparatus requires a large number of substrates to be inspected in a short period of time. Therefore, the industry is strongly required to speed up the inspection speed, and the time taken for each inspection step performed by each of the attention wiring patterns tends to be gradually shortened. On the other hand, the speed of inspection speed tends to be easy to detect due to The change in the undesired current used to perform the charge and discharge of the test causes the test result to be misjudged. Therefore, how to achieve high speed of inspection without reducing the reliability of inspection becomes a problem.

關於此點,本申請案發明人戮力研究結果發現,藉由如上述習知技術,無論是第1階段檢驗及第2階段檢驗中任一者就複數配線圖案設定檢驗對象之注目配線圖案之順序皆相同之構成進行檢驗時,以現在被要求之檢驗速度檢驗雖無問題,但將來檢驗速度之高速化更為進展時,會有易於偵測到起因於用來進行檢驗之充放電之所不希望的電流的變化,導致發生檢驗結果誤判定之虞。具體而言,係自配線面積大的配線圖案起依序設定為注目配線圖案之構成時,在賦予電位差小的第1階段檢驗中雖可實現檢驗速度之提升,但在賦予電位差大的第2階段檢驗中,易於發生雖未因火花導致發生電流漏洩,但電流計偵測到放電流,判定為好像有電流漏洩的情形的誤判定。In this regard, the inventor of the present application has found that, by the above-described conventional technique, the attention wiring pattern of the inspection object is set for any of the plurality of wiring patterns, regardless of the first-stage inspection and the second-stage inspection. When the inspection is performed in the same order, the inspection speed is now no problem, but in the future, when the speed of inspection is more advanced, it is easy to detect the charge and discharge caused by the inspection. Undesirable changes in current lead to erroneous determination of test results. Specifically, when the wiring pattern having a large wiring area is sequentially set as the configuration of the attention wiring pattern, the inspection speed can be improved in the first-stage inspection in which the potential difference is small, but the second potential difference is given. In the phase test, although current leakage does not occur due to the spark, the current meter detects the discharge current and determines that there is a erroneous determination that the current leaks.

且上述習知例中,雖根據配線圖案配線面積決定對複數配線圖案選定注目配線圖案之順序,但除配線圖案配線面積外,接觸配線圖案之檢驗用接觸銷及連接接觸銷之導線等的靜電電容亦大幅影響對配線圖案賦予電位差及解除賦予時之充放電特性。因此,習知例中,決定注目配線圖案之選定順序時未充分顧慮到接觸銷及導線等的靜電電容的影響。In the above-described conventional example, the order of selecting the attention wiring pattern for the plurality of wiring patterns is determined according to the wiring pattern wiring area. However, in addition to the wiring pattern wiring area, the contact contact pins of the contact wiring pattern and the wires connecting the contact pins and the like are electrostatically charged. The capacitance also greatly affects the charge and discharge characteristics when the potential difference is applied to the wiring pattern and the release is released. Therefore, in the conventional example, when the order of selection of the attention wiring pattern is determined, the influence of the electrostatic capacitance such as the contact pin and the lead wire is not sufficiently considered.

且此種基板檢驗裝置中,有時會具有複數電流偵測部,而亦有下列問題:使用頻率偏向一部分電流偵測部,導致一部分電流偵測部之劣化易於較其他電流偵測部快。In such a substrate inspection device, there is a case where a plurality of current detecting portions are sometimes provided, and there is a problem in that the frequency of use is biased toward a part of the current detecting portion, so that deterioration of a part of the current detecting portion is easier than that of other current detecting portions.

在此,本發明應解決之第1課題在於提供一種基板檢驗裝置,就關於設在被檢驗基板之複數配線圖案間之電氣特性之檢驗,可顧慮對各配線圖案賦予電位差及解除賦予時接觸配線圖案之接觸銷等的靜電電容,決定對複數配線圖案之電特性檢驗之順序,且可不降低檢驗結果之可靠度,實現檢驗速度之提升。Here, the first object to be solved by the present invention is to provide a substrate inspection apparatus which can detect the electrical characteristics between the plurality of wiring patterns provided on the substrate to be inspected, and can provide a potential difference to each wiring pattern and release the contact wiring when the wiring is applied. The electrostatic capacitance of the contact pin of the pattern determines the order of the electrical characteristic inspection of the plurality of wiring patterns, and the reliability of the inspection result can be improved without reducing the reliability of the inspection result.

且本發明應解決之第2課題在於提供一種基板檢驗裝置,可防止使用頻率偏向所具有之複數電流偵測部中一部分的電流偵測部。A second object to be solved by the present invention is to provide a substrate inspection apparatus capable of preventing a frequency detecting portion that is biased toward a part of a plurality of current detecting units.

為解決上述課題,依本發明第1形態之基板檢驗裝置中,於設在被檢驗基板的複數配線圖案之間賦予電位差,並同時取出檢驗用信號,藉此檢驗該配線圖案之間的電氣特性,其特徵在於包含:複數接觸銷,與設定於設在該被檢驗基板的該各配線圖案之複數檢驗點接觸;電源部,經由該複數接觸銷在該配線圖案之間賦予電位差,且可變更賦予該配線圖案之間之電位差大小;偵測部,藉由該複數接觸銷偵測關於該配線圖案間之電氣特性之信號;連接切換部,包含複數開關元件,藉由導通、切斷該各開關元件切換該複數接觸銷,與該電源部及該偵測部之間之電性連接關係;及控制部,控制該電源部及該連接切換部之該複數開關元件,並根據該偵測部之偵測結果檢驗該配線圖案之間之電氣特性;且該控制部進行檢驗處理動作,以進行賦予該配線圖案之間之電位差值亦即賦予電位差值不同之複數電特性檢驗,在藉由該控制部進行之該複數檢驗處理動作中,於該檢驗處理動作內複數檢驗步驟中,作為注目配線圖案依順序設定該複數配線圖案其中任一者,且在該各檢驗步驟中,於在該時點被設定為注目配線圖案之配線圖案,與該複數配線圖案中於該時點被設定為該注目配線圖案之配線圖案及在該檢驗處理動作內已曾被設定為注目配線圖案之配線圖案以外的配線圖案所構成之相對配線圖案之間,藉由該電源部並經由該接觸銷賦予對應該檢驗處理動作之該賦予電位差值之電位差,根據該偵測部之偵測結果檢驗該注目配線圖案與該相對配線圖案之間之電氣特性,在該複數電特性檢驗中該賦予電位差值未達於既定基準位準之電特性檢驗中,自該複數配線圖案中,接觸配線圖案之該接觸銷數多者起依序設定其為該注目配線圖案,在該複數電特性檢驗中該賦予電位差值在該既定 基準位準以上之電特性檢驗中,自該複數配線圖案中,接觸配線圖案之該接觸銷數少者起依序設定其為該注目配線圖案。In the substrate inspection apparatus according to the first aspect of the present invention, the potential difference is applied between the plurality of wiring patterns provided on the substrate to be inspected, and the inspection signal is taken out at the same time, thereby verifying the electrical characteristics between the wiring patterns. The method includes a plurality of contact pins that are in contact with a plurality of inspection points set on the wiring patterns provided on the substrate to be inspected, and a power supply unit that applies a potential difference between the wiring patterns via the plurality of contact pins, and is changeable Providing a potential difference between the wiring patterns; the detecting portion detects a signal regarding electrical characteristics between the wiring patterns by the plurality of contact pins; and connecting the switching portion, comprising a plurality of switching elements, by turning on and off the respective The switching element switches the electrical connection between the plurality of contact pins and the power supply unit and the detecting unit; and the control unit controls the plurality of switching elements of the power supply unit and the connection switching unit, and according to the detecting unit The detection result checks the electrical characteristics between the wiring patterns; and the control unit performs a verification processing operation to perform electric power between the wiring patterns The bit difference value is a complex electrical characteristic test that gives a difference in the potential difference. In the complex test processing operation performed by the control unit, the complex number is sequentially set as the attention wiring pattern in the complex inspection process in the verification processing operation. And a wiring pattern which is set as the attention wiring pattern at the time of each of the wiring patterns, and a wiring pattern which is set as the attention wiring pattern at the time of the plurality of wiring patterns and In the inspection processing operation, the matching wiring pattern formed by the wiring pattern other than the wiring pattern of the attention wiring pattern is provided, and the power supply unit supplies the potential difference value corresponding to the inspection processing operation via the contact pin. a potential difference, and verifying an electrical characteristic between the target wiring pattern and the opposite wiring pattern according to a detection result of the detecting portion, wherein the electrical characteristic test is performed when the potential difference value does not reach a predetermined reference level in the complex electrical characteristic test In the plurality of wiring patterns, the number of the contact pins contacting the wiring pattern is set to be the same in order Wiring pattern, the plurality of electrical characteristics of the inspection with the potential difference in the predetermined In the electrical characteristic test of the reference level or more, in the plurality of wiring patterns, the number of the contact pins of the contact wiring pattern is set to be the attention wiring pattern in order.

且依本發明第2形態之基板檢驗裝置中,於設在被檢驗基板的複數配線圖案之間賦予電位差,並同時取出檢驗用信號,藉此檢驗該配線圖案之間的電氣特性,其特徵在於包含:複數接觸銷,與設定於設在該被檢驗基板的該各配線圖案之複數檢驗點接觸;電源部,經由該複數接觸銷在該配線圖案之間賦予電位差,且可變更賦予該配線圖案之間之電位差大小;偵測部,藉由該複數接觸銷偵測關於該配線圖案間之電氣特性之信號;連接切換部,包含複數開關元件,藉由導通、切斷該各開關元件切換該複數接觸銷,與該電源部及該偵測部之間之電性連接關係;及控制部,控制該電源部及該連接切換部之該複數開關元件,並根據該偵測部之偵測結果檢驗該配線圖案之間之電氣特性;且該控制部進行檢驗處理動作,以進行賦予該配線圖案之間之電位差值亦即賦予電位差值不同之複數電特性檢驗,在藉由該控制部進行之該複數檢驗處理動作中,於該檢驗處理動作內複數檢驗步驟中,作為注目配線圖案依順序設定該複數配線圖案其中任一者,且在該各檢驗步驟中,於在該時點被設定為注目配線圖案之配線圖案,與該複數配線圖案中於該時點被設定為該注目配線圖案之配線圖案及在該檢驗處理動作內已曾被設定為注目配線圖案之配線圖案以外的配線圖案所構成之相對配線圖案之間,藉由該電源部並經由該接觸銷賦予對應該檢驗處理動作之該賦予電位差值之電位差,根據該偵測部之偵測結果檢驗該注目配線圖案與該相對配線圖案之間之電氣特性,該複數電特性檢驗中包含第1種及第2種短路檢驗,在該1種短路檢驗中,設定該賦予電位差值為鄰接之該配線圖案之間假性短路,或是因細微的細線部短路之極小短路部導通,且該極小短路部不因在該極小短路部流動之電流燒壞之值, 在該第2種短路檢驗中,設定該賦予電位差值為高於該第1種短路檢驗之該賦予電位差值,且用來偵測因鄰接之該配線圖案之間之火花導致電流漏洩之值,在該第1種短路檢驗中,自該複數配線圖案中,接觸配線圖案之該接觸銷數多者起依序設定其為該注目配線圖案,在該第2種短路檢驗中,自該複數配線圖案中,接觸配線圖案之該接觸銷數少者起依序設定其為該注目配線圖案。Further, in the substrate inspection apparatus according to the second aspect of the present invention, the potential difference is applied between the plurality of wiring patterns provided on the substrate to be inspected, and the inspection signal is taken out at the same time, thereby checking the electrical characteristics between the wiring patterns. The plurality of contact pins are in contact with a plurality of inspection points set on the respective wiring patterns provided on the substrate to be inspected, and the power supply unit applies a potential difference between the wiring patterns via the plurality of contact pins, and the wiring pattern can be changed and given a potential difference between the detecting portion, the signal for detecting electrical characteristics between the wiring patterns by the plurality of contact pins; and a connection switching portion including a plurality of switching elements, wherein the switching elements are switched by turning on and off the switching elements a plurality of contact pins, and an electrical connection relationship between the power supply unit and the detecting unit; and a control unit that controls the plurality of switching elements of the power supply unit and the connection switching unit, and according to the detection result of the detecting unit Verifying electrical characteristics between the wiring patterns; and the control unit performs a verification processing operation to impart a potential difference between the wiring patterns In the complex inspection process performed by the control unit, the complex electrical characteristic test having the difference in potential difference is used to sequentially set the complex wiring pattern as the attention wiring pattern in the complex inspection process in the verification processing operation. And in each of the inspection steps, the wiring pattern set to the attention wiring pattern at the time, and the wiring pattern set to the attention wiring pattern at the time of the plurality of wiring patterns and within the inspection processing operation Between the opposing wiring patterns formed by the wiring patterns other than the wiring pattern of the attention wiring pattern, the power supply unit supplies a potential difference corresponding to the potential difference value corresponding to the inspection processing operation via the contact pin, according to the Detector The detection result of the measuring unit checks the electrical characteristics between the attention wiring pattern and the relative wiring pattern, and the plurality of electrical characteristic tests include the first type and the second type of short-circuit test, and in the one type of short-circuit test, the assignment is set. The potential difference is a pseudo short circuit between the adjacent wiring patterns, or a very small short-circuit guide due to a short thin portion short circuit And not because of the minimal short-circuiting portion short-circuit current at the minimum value of the burned portion of the flow, In the second short-circuit test, the applied potential difference is set to be higher than the applied potential difference of the first short-circuit test, and is used to detect a value of current leakage caused by a spark between adjacent wiring patterns. In the first short-circuit inspection, the number of the contact pins contacting the wiring pattern is set to be the attention wiring pattern in the plurality of wiring patterns, and the second wiring is used in the second short-circuit inspection. In the pattern, the number of the contact pins of the contact wiring pattern is set to be the attention wiring pattern in order.

且依本發明第3形態之基板檢驗裝置如第1或2形態之基板檢驗裝置,其中在藉由該控制部進行之該複數檢驗處理動作中,該複數電特性檢驗自該賦予電位差值小者起依序進行。Further, in the substrate inspection device according to the third aspect of the present invention, the substrate inspection device according to the first or second aspect of the present invention, wherein, in the plurality of inspection processing operations performed by the control unit, the complex electrical characteristic is checked from the small difference in the applied potential difference Start in order.

且依本發明第4形態之基板檢驗裝置如第1至3中任一項形態之基板檢驗裝置,其中該偵測部包含複數電流偵測部,該複數電流偵測部分別被分配給將該複數接觸銷分為複數群組而構成之複數接觸銷群組,藉由屬於其對應之接觸銷群組之接觸銷,偵測在該注目配線圖案或該相對配線圖案與該電源部之間流動之電流, 該控制部於該各電特性檢驗內選擇在該各檢驗步驟用於偵測該電流之該偵測部之該電流偵測部,俾分散該複數電流偵測部之使用頻率。The substrate inspection apparatus according to any one of the first to third aspects of the present invention, wherein the detection unit includes a plurality of current detecting units, and the plurality of current detecting units are respectively assigned to The plurality of contact pins are divided into a plurality of groups of contact pins, and the contact pins belonging to the corresponding contact pin groups are detected to flow between the target wiring pattern or the opposite wiring pattern and the power supply portion. Current, The control unit selects the current detecting unit of the detecting unit for detecting the current in each of the electrical characteristic tests, and disperses the frequency of use of the complex current detecting unit.

按照依本發明第1形態之基板檢驗裝置,各電特性檢驗中針對複數配線圖案注目配線圖案選定之順序係根據在檢驗時接觸配線圖案之接觸銷數決定。配線圖案配線面積愈大接觸配線圖案之接觸銷數傾向愈多,故藉由根據接觸銷數決定注目配線圖案選定之順序,可顧慮到配線圖案、接觸該配線圖案之接觸銷及連接該接觸銷之導線等所構成之整體靜電電容,決定注目配線圖案選定之順序。According to the substrate inspection apparatus according to the first aspect of the present invention, the order of selecting the attention wiring pattern for the plurality of wiring patterns in each electrical characteristic inspection is determined according to the number of contact pins that contact the wiring pattern at the time of inspection. The larger the wiring pattern wiring area is, the more the contact pin number of the contact wiring pattern tends to be. Therefore, by determining the order of the attention wiring pattern according to the number of contact pins, the wiring pattern, the contact pin contacting the wiring pattern, and the contact pin can be connected. The overall capacitance of the wire or the like determines the order in which the attention wiring pattern is selected.

且在複數電特性檢驗中賦予電位差值未達於既定基準位準之電特性檢驗內,自複數配線圖案中,接觸配線圖案之接觸銷數多者起依序設定為注 目配線圖案,在複數電特性檢驗中賦予電位差值在既定基準位準以上之電特性檢驗內,自複數配線圖案中,接觸配線圖案之接觸銷數少者起依序設定為注目配線圖案。因此,在複數電特性檢驗中賦予電位差值未達於既定基準位準之電特性檢驗內,自所接觸之接觸銷多,包含接觸銷等之整體靜電電容大的配線圖案起依序設定為注目配線圖案,藉此可抑制對整體靜電電容大的配線圖案賦予電位差及解除賦予之次數。其結果,可縮短對配線圖案賦予電位差及解除賦予時之所需時間(充放電等所需之時間),實現檢驗速度高速化。另一方面,在複數電特性檢驗中賦予電位差值在既定基準位準以上之電特性檢驗內,自所接觸之接觸銷少,包含接觸銷等之整體靜電電容小的配線圖案起依序設定為注目配線圖案,藉此可抑制檢驗結果之誤判定,迴避檢驗可靠度降低。其結果,檢驗結果可靠度可不降低,實現檢驗速度之提升。And in the electrical characteristic test in which the potential difference value is not up to the predetermined reference level, the number of contact pins of the contact wiring pattern is set to be the same as the number of contact pins in the plurality of wiring patterns. In the electrical characteristic test in which the potential difference value is equal to or greater than the predetermined reference level in the verification of the plurality of electrical characteristics, the number of contact pins of the contact wiring pattern is set as the attention wiring pattern in order from the plurality of wiring patterns. Therefore, in the electrical characteristic test in which the potential difference value does not reach the predetermined reference level in the verification of the plurality of electrical characteristics, there are many contact pins that are in contact with each other, and the wiring pattern including the contact pin or the like having a large overall capacitance is sequentially set as the attention. By the wiring pattern, it is possible to suppress the potential difference from being applied to the wiring pattern having a large overall capacitance and the number of times of the release. As a result, it is possible to shorten the time required for the potential difference to be applied to the wiring pattern and to release the time (the time required for charge and discharge, etc.), and to increase the speed of the inspection. On the other hand, in the electrical characteristic test in which the potential difference value is equal to or higher than the predetermined reference level, the number of contact pins to be contacted is small, and the wiring pattern including the contact pin or the like having a small overall capacitance is sequentially set as By paying attention to the wiring pattern, it is possible to suppress erroneous determination of the inspection result and to reduce the reliability of the avoidance test. As a result, the reliability of the test result can be not reduced, and the test speed is improved.

按照依本發明第2形態之基板檢驗裝置,各電特性檢驗中對複數配線圖案注目配線圖案選定之順序係根據檢驗時接觸配線圖案之接觸銷數決定。配線圖案配線面積愈大接觸配線圖案之接觸銷數傾向愈多,故藉由根據接觸銷數決定注目配線圖案選定之順序,可顧慮配線圖案、接觸該配線圖案之接觸銷及連接該接觸銷之導線等所構成之整體靜電電容,決定注目配線圖案選定之順序。According to the substrate inspection apparatus according to the second aspect of the present invention, the order of selecting the attention wiring pattern for the plurality of wiring patterns in each electrical characteristic inspection is determined according to the number of contact pins of the contact wiring pattern at the time of inspection. The larger the wiring pattern wiring area, the more the number of contact pins contacting the wiring pattern tends to be. Therefore, the order of selection of the attention wiring pattern is determined according to the number of contact pins, and the wiring pattern, the contact pin contacting the wiring pattern, and the contact pin can be connected. The overall capacitance of the wire or the like determines the order in which the attention wiring pattern is selected.

且在設定賦予電位差值為與關於配線圖案間極小短路部之檢驗對應之較小的值之第1種短路檢驗中,自複數配線圖案中,接觸配線圖案之接觸銷數多者起依序設定為注目配線圖案,在設定賦予電位差值為與關於因配線圖案間之火花導致電流漏洩之檢驗對應之較大的值之第2種短路檢驗內,自複數配線圖案中,接觸配線圖案之接觸銷數少者起依序設定為注目配線圖案。因此,在賦予電位差值小的第1種短路檢驗中,自所接觸之接觸銷多,包含接觸銷等之整體靜電電容大的配線圖案起依序設定為注目配線圖案,藉此可抑制對整體靜電電容大的配線圖案賦予電位差及解除賦予之次數。其結果,可縮短對配線圖案賦予電位差及解除賦予時之所需時間(充放電等所需之時間),實現檢驗速度高速化。另一方面,在賦予電位差值大 的第2種短路檢驗中,自所接觸之接觸銷少,包含接觸銷等之整體靜電電容小的配線圖案起依序設定為注目配線圖案,藉此可抑制檢驗結果之誤判定,迴避檢驗可靠度降低。其結果,檢驗結果可靠度可不降低而實現檢驗速度之提升。In the first type of short-circuit test in which the value of the contact potential is set to a small value corresponding to the inspection of the extremely short-circuit portion between the wiring patterns, the number of contact pins of the contact wiring pattern is set in order from the plurality of wiring patterns. In the second short-circuit test in which the potential difference value is set to a larger value corresponding to the test for causing current leakage due to the spark between the wiring patterns, the contact pin of the contact wiring pattern is selected from the plurality of wiring patterns. The smaller number is set as the attention wiring pattern in order. Therefore, in the first type of short-circuit test in which the potential difference is small, the number of contact pins to be contacted is large, and the wiring pattern including the contact pin or the like having a large overall capacitance is sequentially set as the attention wiring pattern, thereby suppressing the overall alignment. The wiring pattern having a large electrostatic capacitance gives a potential difference and the number of times of the release. As a result, it is possible to shorten the time required for the potential difference to be applied to the wiring pattern and to release the time (the time required for charge and discharge, etc.), and to increase the speed of the inspection. On the other hand, the difference in potential is given In the second type of short-circuit test, the number of contact pins to be contacted is small, and the wiring pattern including the contact pin or the like having a small overall capacitance is sequentially set as the attention wiring pattern, thereby suppressing erroneous determination of the inspection result and reliably avoiding the inspection. Degree is reduced. As a result, the reliability of the test result can be improved without increasing the test speed.

按照依本發明第3形態之基板檢驗裝置,複數電特性檢驗自賦予電位差值小者起依序進行,故可迴避極小短路部於檢驗時因過電流燒壞,並同時就配線圖案間之電氣特性進行檢驗。According to the substrate inspection apparatus according to the third aspect of the present invention, the plurality of electrical characteristic tests are sequentially performed from the case where the potential difference is small, so that the minimum short-circuit portion can be avoided due to overcurrent burning during the inspection, and at the same time, the electrical wiring between the wiring patterns Characteristics are tested.

按照依本發明第4形態之基板檢驗裝置,於各電特性檢驗內選擇在各檢驗步驟用於偵測電流之偵測部之電流偵測部,俾分散複數電流偵測部之使用頻率,故可防止使用頻率偏向一部分電流偵測部,防止一部分電流偵測部之劣化較其他電流偵測部快。According to the substrate inspection apparatus of the fourth aspect of the present invention, the current detecting unit for detecting the current in each of the inspection steps is selected in each of the electrical characteristic tests, and the frequency of use of the complex current detecting unit is dispersed. The frequency of use can be prevented from being biased toward a part of the current detecting portion, and the deterioration of a part of the current detecting portion is prevented from being faster than that of other current detecting portions.

A、A1-A4‧‧‧電流偵測部A, A1-A4‧‧‧ Current Detection Department

N、N1-N4、Na1-Na4‧‧‧配線圖案N, N1-N4, Na1-Na4‧‧‧ wiring pattern

P、P1、P2、P1-P64、P65-P128、P129-P192、P193-P256‧‧‧接觸銷P, P1, P2, P1-P64, P65-P128, P129-P192, P193-P256‧‧‧ contact pin

PG、PG1、PG2‧‧‧銷群組PG, PG1, PG2‧‧‧ sales group

Sa1-Sa3、Sb1-Sb3‧‧‧檢驗步驟Sa1-Sa3, Sb1-Sb3‧‧‧ inspection steps

ST1、ST2‧‧‧步驟ST1, ST2‧‧‧ steps

SW1、SW2、SW2a-SW2c、SWb‧‧‧開關元件SW1, SW2, SW2a-SW2c, SWb‧‧‧ switching elements

V‧‧‧電位差偵測部V‧‧‧potential difference detection unit

1‧‧‧基板檢驗裝置1‧‧‧Substrate inspection device

2‧‧‧被檢驗基板2‧‧‧Tested substrate

11‧‧‧電源部11‧‧‧Power Department

12‧‧‧連接切換部12‧‧‧Connection Switching Department

13‧‧‧控制部13‧‧‧Control Department

圖1係依本發明一實施形態之基板檢驗裝置電性構成之顯示圖。BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing the electrical configuration of a substrate inspection apparatus according to an embodiment of the present invention.

圖2係設在被檢驗基板之配線圖案構成等之示意顯示圖。Fig. 2 is a schematic view showing the configuration of a wiring pattern provided on a substrate to be inspected.

圖3係設在圖2之被檢驗基板之配線圖案與接觸該配線圖案之接觸銷數量的對應關係之例示圖。Fig. 3 is a view showing an example of the correspondence relationship between the wiring pattern of the substrate to be inspected of Fig. 2 and the number of contact pins contacting the wiring pattern.

圖4係顯示圖1基板檢驗裝置檢驗順序之流程圖。4 is a flow chart showing the inspection sequence of the substrate inspection apparatus of FIG. 1.

圖5係用來說明第1及第2種短路檢驗各檢驗步驟中注目配線圖案及相對配線圖案設定順序之圖。Fig. 5 is a view for explaining the order of setting the attention wiring pattern and the relative wiring pattern in each of the first and second short-circuit inspection inspection steps.

圖6係關於圖1基板檢驗裝置之變形例,用來說明複數電流偵測部之使用形態之圖。Fig. 6 is a view showing a modification of the substrate inspection device of Fig. 1 for explaining a use form of the complex current detecting portion.

參照圖1至圖5,說明關於依本發明一實施形態之基板檢驗裝置。此基板檢驗裝置1如圖1及圖2所示,包含複數接觸銷P1、P2、…(通稱此等 者時為符號「P」)、電源部11、複數電流偵測部A1、A2、…(通稱此等者時使用符號「A」)、電位差偵測部V、連接切換部12及控制部13,對設在被檢驗基板2之複數配線圖案N1、N2、…(通稱此等者時使用符號「N」)間賦予電位差並同時取出檢驗用信號,藉此檢驗配線圖案N間的電氣特性。本發明之偵測部中,電流偵測部A及電位差偵測部V相對應。A substrate inspection apparatus according to an embodiment of the present invention will be described with reference to Figs. 1 to 5 . As shown in FIGS. 1 and 2, the substrate inspection apparatus 1 includes a plurality of contact pins P1, P2, ... (collectively referred to as such In the case of the symbol "P"), the power supply unit 11, the complex current detecting units A1, A2, ... (the symbol "A" is used when referring to these), the potential difference detecting unit V, the connection switching unit 12, and the control unit 13 The electric potential between the wiring patterns N is checked by applying a potential difference between the plurality of wiring patterns N1, N2, ... (the symbol "N" used in the case of the above-mentioned substrate 2) and taking out the inspection signal. In the detecting unit of the present invention, the current detecting unit A and the potential difference detecting unit V correspond to each other.

1或複數接觸銷P在檢驗時對應配線圖案N之角色(電源配線、接地配線、信號配線等),及形態(配線長、配線形狀等)接觸設在被檢驗基板2之各配線圖案N。此時,配線面積愈大的配線圖案N傾向接觸愈多的接觸銷P。圖2所示之例中,2個接觸銷P接觸配線圖案N1,3個接觸銷P接觸配線圖案N2。1 or a plurality of contact pins P contact the respective wiring patterns N provided on the substrate 2 to be inspected in accordance with the role of the wiring pattern N (power supply wiring, ground wiring, signal wiring, etc.) and the form (wiring length, wiring shape, etc.) at the time of inspection. At this time, the wiring pattern N having a larger wiring area tends to contact the contact pin P which is more contacted. In the example shown in FIG. 2, the two contact pins P contact the wiring pattern N1, and the three contact pins P contact the wiring pattern N2.

接觸銷P係用來針對基板檢驗裝置1各配線圖案N形成電性連接點,在由未圖示之絕緣性固持構件固持之狀態下,藉由未圖示之昇降機構等與固持構件一齊昇降,於檢驗時其前端部接觸對應之配線圖案N接觸點。接觸銷P後端部經由電極部與連接基板檢驗裝置1本體側之導線導通。且如此之接觸銷P經分為複數接觸銷P所構成之複數銷群組PG1、PG2、…(通稱此等者時使用符號「PG」)。The contact pin P is used to form an electrical connection point with respect to each of the wiring patterns N of the substrate inspection apparatus 1, and is held together with the holding member by a lifting mechanism or the like (not shown) while being held by an insulating holding member (not shown). At the time of inspection, the front end portion contacts the corresponding contact point of the wiring pattern N. The rear end portion of the contact pin P is electrically connected to the wire on the main body side of the connection substrate inspection device 1 via the electrode portion. Further, the contact pin P is divided into a plurality of pin groups PG1, PG2, ... formed by the plurality of contact pins P (the symbol "PG" is used when referring to these).

電源部11藉由後述控制部13之控制,經由接觸銷P在各配線圖案N間賦予用來偵測配線圖案N間電氣特性之電位差。且電源部11在配線圖案N間所賦予之電位差大小可藉由控制部13之控制變更。The power supply unit 11 is provided with a potential difference for detecting electrical characteristics between the wiring patterns N between the respective wiring patterns N via the contact pins P under the control of the control unit 13 to be described later. The magnitude of the potential difference applied between the wiring patterns N by the power supply unit 11 can be changed by the control of the control unit 13.

電流偵測部A逐一設置於每一銷群組PG,作為整體設有複數個,偵測經由對應之銷群組PG之接觸銷P在配線圖案N與電源部11之間流動之電流,賦予控制部13偵測結果。如此之電流偵測部A插設於連接例如連接切換部12之第2段各開關元件SW2a與電源部11一方側輸出部(例如正側輸出部)之間之導電通道。又,作為變形例,電流偵測部A亦可插設於連接連接切換部12之第2段各開關元件SW2b與電源部11另一方側輸出部(例如負側輸出部)之間之導電通道。The current detecting unit A is disposed one by one in each of the pin groups PG, and is provided as a whole, and detects a current flowing between the wiring pattern N and the power supply unit 11 via the contact pin P of the corresponding pin group PG. The control unit 13 detects the result. The current detecting unit A is inserted into a conductive path connecting, for example, the switching element SW2a of the second stage of the connection switching unit 12 and the output unit (for example, the positive side output unit) of the power supply unit 11. Further, as a modification, the current detecting unit A may be inserted in a conductive path between the switching element SW2b of the second stage connected to the connection switching unit 12 and the other side output unit (for example, the negative side output unit) of the power supply unit 11. .

電位差偵測部V以接觸銷P偵測由電源部11在配線圖案N間所賦予之電位差,賦予控制部13偵測結果。The potential difference detecting unit V detects the potential difference given between the wiring patterns N by the power supply unit 11 by the contact pin P, and gives the control unit 13 a detection result.

又,本實施形態中,雖設有電流偵測部A及電位差偵測部V雙方,但在可根據電源部11之輸出電位差值或輸出電流值取得關於賦予各配線圖案N間之電位差值或自電源部11供給給注目配線圖案之電流值之資訊時,亦可省略電流偵測部A與電位差偵測部V其中一方。Further, in the present embodiment, both the current detecting unit A and the potential difference detecting unit V are provided, but the potential difference between the respective wiring patterns N can be obtained based on the output potential difference or the output current value of the power supply unit 11. When the information on the current value of the attention wiring pattern is supplied from the power supply unit 11, one of the current detecting unit A and the potential difference detecting unit V may be omitted.

連接切換部12包含因控制部13之控制進行導通、切斷動作之複數開關元件(例如半導體開關元件)SW1、SW2。又,藉由導通、切斷該開關元件SW1、SW2切換各接觸銷P與裝置本體側構成(電源部11、電流偵測部A及電位差偵測部V)之電連接關係。本實施形態中,以2段構成之方式製備複數開關元件SW1與複數開關元件SW2。The connection switching unit 12 includes a plurality of switching elements (for example, semiconductor switching elements) SW1 and SW2 that are turned on and off by the control of the control unit 13. Moreover, the electrical connection relationship between each contact pin P and the apparatus main body side configuration (the power supply unit 11, the current detecting unit A, and the potential difference detecting unit V) is switched by turning on and off the switching elements SW1 and SW2. In the present embodiment, the complex switching element SW1 and the complex switching element SW2 are formed in a two-stage configuration.

第1段開關元件SW1設於每一各接觸銷P,藉由導通該開關元件SW1,複數接觸銷P中對應該開關元件SW1之接觸銷P經由第2段開關元件SW2連接裝置本體側之構成(電源部11、電流偵測部A及電位差偵測部V)。The first switching element SW1 is provided in each of the contact pins P, and the switching pin SW1 is turned on, and the contact pin P of the plurality of contact pins P corresponding to the switching element SW1 is connected to the main body side of the device via the second switching element SW2. (Power supply unit 11, current detecting unit A, and potential difference detecting unit V).

第2段開關元件SW2於每一各銷群組PG逐一設有3個。又,3個開關元件SW2其中任一者一旦導通,對應該3個開關元件SW2之銷群組PG之接觸銷P即經由第1段開關元件SW1連接電源部11之一方側輸出端子(例如正側輸出端子)、電源部11之另一方側輸出端子(例如負側輸出端子)及接地電位中任一者。例如,開關元件SW2a一旦導通,對應之銷群組PG之接觸銷P即經由第1段開關元件SW1連接電源部11之一方側輸出端子(例如正側輸出端子)。開關元件SW2b一旦導通,對應之銷群組PG之接觸銷P即經由第1段開關元件SW1連接電源部11之另一方側輸出端子(例如負側輸出端子)。開關元件SW2c一旦導通,對應之銷群組PG之接觸銷P即經由第1段開關元件SW1連接接地電位。The second-stage switching element SW2 is provided one by one for each pin group PG. When one of the three switching elements SW2 is turned on, the contact pin P corresponding to the pin group PG of the three switching elements SW2 is connected to one side output terminal of the power supply unit 11 via the first switching element SW1 (for example, positive The side output terminal), the other side output terminal of the power supply unit 11 (for example, the negative side output terminal), and the ground potential. For example, when the switching element SW2a is turned on, the contact pin P corresponding to the pin group PG is connected to one side output terminal (for example, the positive side output terminal) of the power supply unit 11 via the first switching element SW1. When the switching element SW2b is turned on, the contact pin P corresponding to the pin group PG is connected to the other side output terminal (for example, the negative side output terminal) of the power supply unit 11 via the first switching element SW1. When the switching element SW2c is turned on, the contact pin P corresponding to the pin group PG is connected to the ground potential via the first-stage switching element SW1.

控制部13主宰此基板檢驗裝置1之控制及針對被檢驗基板2之檢驗處理。此控制部13之控制動作中包含電源部11輸出之導通、切斷、電源部11賦予配線圖案N間電位差大小之變更或調節及藉由使連接切換部12各開關元件SW1、SW2進行導通、切斷動作切換複數接觸銷P與裝置本體側構成(電源部11、電流偵測部A及電位差偵測部V)之電連接關係等。The control unit 13 dictates the control of the substrate inspection apparatus 1 and the inspection processing for the substrate 2 to be inspected. The control operation of the control unit 13 includes turning on and off the output of the power supply unit 11, and changing or adjusting the magnitude of the potential difference between the wiring patterns N by the power supply unit 11, and turning on the switching elements SW1 and SW2 of the connection switching unit 12, The cutting operation switches the electrical connection relationship between the plurality of contact pins P and the apparatus main body side configuration (the power supply unit 11, the current detecting unit A, and the potential difference detecting unit V).

由控制部13控制之檢驗處理中包含檢驗處理動作,以進行係賦予配線圖案N間之電位差值之賦予電位差值不同之複數電特性檢驗。該各檢驗處理動作中,於該檢驗處理動作內複數檢驗步驟中,複數配線圖案N其中任一者作為注目配線圖案依順序設定之。並且,於該各檢驗步驟中,朝於該時點經設定為注目配線圖案之配線圖案N,與複數配線圖案N中於該時點經設定為注目配線圖案之配線圖案N及於該檢驗處理動作內已曾被設定為注目配線圖案N之配線圖案N以外的配線圖案N所構成之相對配線圖案之間,經由接觸銷P並藉由電源部11賦予對應該檢驗處理動作之賦予電位差值之電位差。又,根據電流偵測部A及電位差偵測部V之偵測結果檢驗注目配線圖案與相對配線圖案之間之電氣特性(本實施形態中係絕緣性)。The inspection process controlled by the control unit 13 includes a verification processing operation for performing a complex electrical characteristic test in which the potential difference values of the potential differences between the wiring patterns N are different. In each of the inspection processing operations, in the plurality of inspection steps in the inspection processing operation, one of the plurality of wiring patterns N is sequentially set as the attention wiring pattern. In the respective inspection steps, the wiring pattern N set to the attention wiring pattern is formed at the time point, and the wiring pattern N set to the attention wiring pattern at the time of the plurality of wiring patterns N is within the inspection processing operation. The potential difference between the opposing wiring patterns formed by the wiring pattern N other than the wiring pattern N of the attention wiring pattern N is set to the potential difference of the potential difference corresponding to the inspection processing operation via the contact pin P via the power supply unit 11. Moreover, the electrical characteristics (insulation in the present embodiment) between the attention wiring pattern and the opposite wiring pattern are checked based on the detection results of the current detecting unit A and the potential difference detecting unit V.

關於注目配線圖案與相對配線圖案之間絕緣性之檢驗例如以下般進行。亦即,在兩配線圖案間藉由電源部11賦予電位差,此時藉由電位差偵測部V偵測兩配線圖案間之電位差值,並藉由電流偵測部A偵測在兩配線圖案間流動之電流。又,以電流值除經偵測之電位差值,計算兩配線圖案間之假想電阻值,該電阻值若在係判定基準之基準電阻值以上,即判定為適當,該電阻值若未達於基準電阻值即判定為不良。又,判定基準之基準電阻值宜設定為於每一電特性檢驗對應檢驗對象之值。The inspection of the insulation between the attention wiring pattern and the opposing wiring pattern is performed, for example, as follows. That is, the potential difference is given by the power supply unit 11 between the two wiring patterns. At this time, the potential difference detecting portion V detects the potential difference between the two wiring patterns, and the current detecting portion A detects between the two wiring patterns. Current flowing. Further, the virtual resistance value is divided by the detected potential difference, and the virtual resistance value between the two wiring patterns is calculated. If the resistance value is greater than or equal to the reference resistance value of the determination criterion, the resistance value is determined to be appropriate, and the resistance value is less than the reference value. The resistance value was judged to be defective. Further, the reference resistance value of the determination criterion is preferably set to the value of the corresponding test object for each electrical characteristic test.

且複數電特性檢驗依序自賦予電位差值小者起進行。And the plurality of electrical property tests are sequentially performed from the case where the potential difference is small.

且於複數電特性檢驗中賦予電位差值未達於既定基準位準之電特性檢驗內,自複數配線圖案N中接觸配線圖案N之接觸銷P數多者起依序設定為注目配線圖案。另一方面,於複數電特性檢驗中賦予電位差值在既定基 準位準以上之電特性檢驗內,自複數配線圖案N中接觸配線圖案N之接觸銷P數少者起依序設定為注目配線圖案。In the electrical characteristic test in which the potential difference value is not higher than the predetermined reference level in the verification of the plurality of electrical characteristics, the number of contact pins P contacting the wiring pattern N in the plurality of wiring patterns N is sequentially set as the attention wiring pattern. On the other hand, in the complex electrical property test, the potential difference is given at a given base. In the electrical characteristic test of the above-described level, the number of contact pins P contacting the wiring pattern N in the plurality of wiring patterns N is set as the attention wiring pattern in order.

更具體而言,本實施形態中,作為複數電特性檢驗,進行第1種及第2種短路檢驗。第1種短路檢驗中,設定賦予電位差值為鄰接之配線圖案N間假性短路,或是因細微的細線部短路之極小短路部導通,且該極小短路部不因於該極小短路部流動之電流燒壞之值(第1賦予電位差值)。第2種短路檢驗中,設定賦予電位差值為高於第1種短路檢驗之賦予電位差值,且用來偵測鄰接之配線圖案間因火花導致電流漏洩之值(第2賦予電位差值)。又,設定相對於賦予電位差值之基準位準為大於該第1賦予電位差值,且在第2賦予電位差值以下的值(例如150~250V)。又,本實施形態中,作為複數電特性檢驗雖進行第1及第2種短路檢驗所構成之2種電特性檢驗,但亦可進行3種以上電特性檢驗。More specifically, in the present embodiment, the first type and the second type of short-circuit test are performed as the complex electrical characteristic test. In the first short-circuit test, the potential difference is set to be a false short between the adjacent wiring patterns N, or a small short-circuit portion that is short-circuited by a fine thin portion is turned on, and the extremely short-circuit portion is not caused by the extremely short-circuit portion. The value of current burnout (the first potential difference). In the second type of short-circuit test, the difference between the applied potentials is set to be higher than the applied potential difference of the first short-circuit test, and the value of the current leakage due to the spark between the adjacent wiring patterns is detected (the second applied potential difference). Further, the reference level with respect to the potential difference value is set to a value larger than the first applied potential difference value and equal to or lower than the second applied potential difference value (for example, 150 to 250 V). Further, in the present embodiment, two types of electrical characteristic tests including the first and second short-circuit tests are performed as the complex electrical characteristic test, but three or more types of electrical characteristics may be tested.

因此,賦予電位差值小的第1種短路檢驗中,自複數配線圖案N中接觸配線圖案N之接觸銷P數多者起依序設定為注目配線圖案。賦予電位差值大的第2種短路檢驗中,自複數配線圖案N中接觸配線圖案N之接觸銷P數少者起依序設定為注目配線圖案。Therefore, in the first short-circuit test in which the potential difference is small, the number of contact pins P that contact the wiring pattern N in the plurality of wiring patterns N is sequentially set as the attention wiring pattern. In the second short-circuit test in which the potential difference is large, the number of contact pins P that contact the wiring pattern N in the plurality of wiring patterns N is sequentially set as the attention wiring pattern.

更詳細而言,第1種短路檢驗中,檢驗有無配線圖案N間假性短路,或是因細微的細線部短路之極小短路部導致的絕緣不良。極小短路部中包含如本說明書記載之專利文獻1之圖3(a)及圖3(b)所示之細微短路部,與如同圖4所示之疑似短路部。More specifically, in the first type of short-circuit test, it is checked whether or not there is a false short circuit between the wiring patterns N or an insulation failure due to a very small short-circuit portion of a short thin portion short-circuited. The extremely short-circuit portion includes the minute short-circuit portion shown in FIGS. 3(a) and 3(b) of Patent Document 1 described in the present specification, and the suspected short-circuit portion as shown in FIG.

細微短路部係因例如配線圖案N之蝕刻處理時,應去除之不要的配線材料未被完全去除而留下的蝕刻殘餘等產生。如此之細微短路部其粗細細微至例如微米級等,故若在短路檢驗時對配線圖案N施加大電位差,有時即會因在細微短路部流動之電流燒壞。如此之細微短路部之電阻值多半在約100Ω以下。The fine short-circuit portion is caused by, for example, an etching residue left after the etching process of the wiring pattern N is performed, and the unnecessary wiring material is not completely removed. Since the thickness of such a fine short-circuit portion is as small as, for example, a micron order or the like, if a large potential difference is applied to the wiring pattern N during the short-circuit inspection, the current flowing in the minute short-circuit portion may be burned out. The resistance value of such a minute short-circuit portion is mostly about 100 Ω or less.

所謂疑似短路部會使鄰接之配線圖案N疑似短路而引起絕緣不良,在鄰接之配線圖案N間如架橋般斷續形成,係隨著對該疑似短路部施加之電位差增大自非導通狀態變化為導通狀態之不良。如此之疑似短路部由例如在鄰接之配線圖案N間如架橋般斷續連接形成之一或複數細微導體粒或細微導體片(例如配線圖案N之材料所構成之細微導體粉或細微導體片)構成。又,即使係如此之疑似短路部,若於短路檢驗時對配線圖案N施加大電位差,有時亦會因在疑似短路部流動之電流燒壞。如此之疑似短路部之電阻值多半在約10MΩ-約100MΩ。The suspected short-circuit portion causes the adjacent wiring pattern N to be short-circuited and causes insulation failure, and is formed intermittently between the adjacent wiring patterns N as a bridge, and the potential difference applied to the suspected short-circuit portion increases from the non-conduction state. It is a bad state of conduction. Such a suspected short-circuit portion is formed by, for example, intermittently connecting between adjacent wiring patterns N, or a plurality of fine conductor particles or fine conductor sheets (for example, a fine conductor powder or a fine conductor sheet composed of a material of the wiring pattern N). Composition. Further, even in the case of such a short-circuited portion, if a large potential difference is applied to the wiring pattern N during the short-circuit inspection, the current flowing in the suspected short-circuit portion may be burned out. It is thus suspected that the resistance value of the short-circuit portion is mostly from about 10 MΩ to about 100 MΩ.

第2種短路檢驗中,藉由偵測有無鄰接之配線圖案N間因火花導致電流漏洩檢驗配線圖案N間之絕緣不良。如此因火花引起電流漏洩之絕緣不良處中,可舉出例如本說明書之專利文獻1之圖5所示之圖案接近部。此圖5之圖案接近部因配線圖案N形成時之圖案不良等產生,係鄰接之配線圖案N彼此異常接近之部分,因火花引起絕緣不良。此圖案接近部之電阻值在火花產生前實質上無限大,火花產生時為對應其間隙尺寸等之有限值,例如約1MΩ。In the second type of short-circuit test, the insulation failure between the wiring patterns N is checked by detecting the presence or absence of the adjacent wiring pattern N due to the current leakage caused by the spark. In the insulation defect where the current leaks due to the spark, the pattern approaching portion shown in FIG. 5 of Patent Document 1 of the present specification is exemplified. The pattern approaching portion of FIG. 5 is caused by a pattern defect or the like when the wiring pattern N is formed, and is a portion where the adjacent wiring patterns N are abnormally close to each other, and insulation failure is caused by the spark. The resistance value of the pattern approaching portion is substantially infinite before the spark is generated, and the spark is generated at a finite value corresponding to the gap size or the like, for example, about 1 MΩ.

其次,作為具體例,說明關於就如圖3表所示之4個配線圖案N1-N4進行第1種及第2種短路檢驗之情形。依圖3之表,配線圖案N1接觸2個接觸銷P,配線圖案N2接觸3個接觸銷P,配線圖案N3接觸5個接觸銷P,配線圖案N4接觸7個接觸銷P。Next, as a specific example, a case will be described in which the first type and the second type of short-circuit inspection are performed on the four wiring patterns N1 - N4 shown in the table of FIG. According to the table of Fig. 3, the wiring pattern N1 contacts the two contact pins P, the wiring pattern N2 contacts the three contact pins P, the wiring pattern N3 contacts the five contact pins P, and the wiring pattern N4 contacts the seven contact pins P.

檢驗之順序如圖4所示,於步驟ST1進行第1種短路檢驗後,於步驟ST2進行第2種短路檢驗。The procedure of the inspection is as shown in Fig. 4. After the first short-circuit test is performed in step ST1, the second short-circuit test is performed in step ST2.

第1種短路檢驗中,設定藉由電源部11在注目配線圖案與相對配線圖案之間所賦予之賦予電位差值為第1賦予電位差值(例如10V),如圖5表上側部分所示,以檢驗步驟Sa1、檢驗步驟Sa2、檢驗步驟Sa3之順序進展。In the first short-circuit test, the potential difference value given between the target wiring pattern and the opposite wiring pattern by the power supply unit 11 is set to be the first applied potential difference value (for example, 10 V), as shown in the upper part of the table of FIG. The order of the inspection step Sa1, the inspection step Sa2, and the inspection step Sa3 progresses.

檢驗步驟Sa1中,設定接觸之接觸銷P數(以下稱「銷數」)最多的配線圖案N4為注目配線圖案,設定此以外所有的配線圖案N1-N3為相對配線圖案,進行關於配線圖案N4與配線圖案N1-N3之間極小短路部之絕緣檢驗。作為具體動作,例如導通與接觸配線圖案N1-N4之接觸銷P對應之連接切換部12第1段開關元件SW1,並導通第2段開關元件SW2中與接觸配線圖案N4之接觸銷P對應之任一開關元件SW2a,導通與接觸配線圖案N1之接觸銷P對應之任一開關元件SW2b,導通與接觸配線圖案N2之接觸銷P對應之任一開關元件SW2b,導通與接觸配線圖案N3之接觸銷P對應之任一開關元件SW2b。此時,切斷第2段其他所有開關元件SW2。In the inspection step Sa1, the wiring pattern N4 having the largest number of contact pins P (hereinafter referred to as "pin number") is set as the attention wiring pattern, and all the other wiring patterns N1 - N3 are set as the opposite wiring patterns, and the wiring pattern N4 is performed. Insulation inspection of a very short circuit between the wiring patterns N1-N3. As a specific operation, for example, the first switching element SW1 of the connection switching unit 12 corresponding to the contact pin P of the contact wiring patterns N1 - N4 is turned on, and the contact pin P of the second switching element SW2 that is in contact with the contact wiring pattern N4 is turned on. Any of the switching elements SW2a turns on any one of the switching elements SW2b corresponding to the contact pin P of the contact wiring pattern N1, turns on any of the switching elements SW2b corresponding to the contact pin P of the contact wiring pattern N2, and conducts contact with the contact wiring pattern N3. Any one of the switching elements SW2b corresponding to the pin P. At this time, all the other switching elements SW2 in the second stage are cut off.

藉此,係注目配線圖案之配線圖案N4經由接觸銷P、連接切換部12之開關元件SW1及開關元件SW2a連接電源部11之一方側輸出部(例如正側輸出部)。且係相對配線圖案之配線圖案N1-N3經由接觸銷P、連接切換部12之開關元件SW1及開關元件SW2b連接電源部11之另一方側輸出部(例如負側輸出部)。又,藉由電源部11在配線圖案N4與配線圖案N1-N3之間賦予第1賦予電位差值之電位差,藉由電流偵測部A偵測此時在配線圖案N4與配線圖案N1-N3之間流動之電流(嚴密而言,在電源部11之一方側輸出部與配線圖案N4之間流動之電流),並藉由電位差偵測部V偵測在配線圖案N4與配線圖案N1-N3之間所賦予之電位差。接著,根據該經偵測之電流值與電位差值計算配線圖案N4與配線圖案N1-N3之間之假想電阻值,根據該電阻值判定有無配線圖案N4與配線圖案N1-N3之間之極小短路部。藉此,針對配線圖案N4之第1種短路檢驗結束。Thereby, the wiring pattern N4 of the attention wiring pattern is connected to one side output portion (for example, the positive side output portion) of the power source portion 11 via the contact pin P and the switching element SW1 and the switching element SW2a of the connection switching portion 12. Further, the wiring patterns N1 - N3 with respect to the wiring pattern are connected to the other side output portion (for example, the negative side output portion) of the power supply portion 11 via the contact pin P and the switching element SW1 and the switching element SW2b of the connection switching portion 12. Further, the power supply unit 11 applies a potential difference of the first applied potential difference between the wiring pattern N4 and the wiring patterns N1 - N3, and the current detecting portion A detects the wiring pattern N4 and the wiring patterns N1 - N3 at this time. The current flowing between the currents (strictly speaking, the current flowing between the one side output portion of the power supply unit 11 and the wiring pattern N4) is detected by the potential difference detecting portion V in the wiring pattern N4 and the wiring patterns N1 - N3 The potential difference between the two. Then, the virtual resistance value between the wiring pattern N4 and the wiring pattern N1 - N3 is calculated based on the detected current value and the potential difference, and the presence or absence of a very small short circuit between the wiring pattern N4 and the wiring pattern N1 - N3 is determined based on the resistance value. unit. Thereby, the first short-circuit inspection for the wiring pattern N4 is completed.

又,在與接觸配線圖案N1-N4之接觸銷P對應之第1段開關元件SW1導通之狀態下,導通第2段開關元件SW2中分別與接觸配線圖案N1-N4之接觸銷P對應之開關元件SW2c,配線圖案N1-N4經由接觸銷P、開關元件SW1、SW2c連接接地電位。藉此,使因賦予電位差存留於配線圖案N1-N4之電荷放電。In the state in which the first-stage switching element SW1 corresponding to the contact pin P of the contact wiring pattern N1-N4 is turned on, the switch corresponding to the contact pin P of the contact wiring pattern N1-N4 in the second-stage switching element SW2 is turned on. The element SW2c and the wiring patterns N1-N4 are connected to the ground potential via the contact pin P and the switching elements SW1 and SW2c. Thereby, the electric charge remaining in the wiring patterns N1 - N4 due to the potential difference is discharged.

接著於檢驗步驟Sa2中,設定銷數第2多的配線圖案N3為注目配線圖案。設定除配線圖案N3與已曾被設定為注目配線圖案之配線圖案N4外剩下的配線圖案N1、N2為相對配線圖案。又,例如導通與接觸配線圖案N1-N3之接觸銷P對應之連接切換部12之第1段開關元件SW1,並導通第2段開關元件SW2中與接觸配線圖案N1之接觸銷P對應之任一開關元件SW2b,導通與接觸配線圖案N2之接觸銷P對應之任一開關元件SW2b。此時,切斷第2段其他所有開關元件SW2。Next, in the inspection step Sa2, the wiring pattern N3 having the second largest number of pins is set as the attention wiring pattern. The wiring patterns N1 and N2 remaining except the wiring pattern N3 and the wiring pattern N4 which has been set as the attention wiring pattern are set as the opposite wiring patterns. Further, for example, the first switching element SW1 of the connection switching portion 12 corresponding to the contact pin P of the contact wiring pattern N1-N3 is turned on, and the contact pin P of the second switching element SW2 corresponding to the contact wiring pattern N1 is turned on. The switching element SW2b turns on any one of the switching elements SW2b corresponding to the contact pin P of the contact wiring pattern N2. At this time, all the other switching elements SW2 in the second stage are cut off.

藉此,係注目配線圖案之配線圖案N3經由接觸銷P、連接切換部12之開關元件SW1及開關元件SW2a連接電源部11之一方側輸出部(例如正側輸出部)。且係相對配線圖案之配線圖案N1、N2經由接觸銷P、連接切換部12之開關元件SW1及開關元件SW2b連接電源部11之另一方側輸出部(例如負側輸出部)。又,藉由電源部11在配線圖案N3與配線圖案N1、N2之間賦予第1賦予電位差值之電位差,藉由電流偵測部A偵測此時在配線圖案N3與配線圖案N1、N2之間流動之電流(嚴密而言,在電源部11之一方側輸出部與配線圖案N3之間流動之電流),並藉由電位差偵測部V偵測在配線圖案N3與配線圖案N1、N2之間所賦予之電位差。接著,根據該經偵測之電流值與電位差值計算配線圖案N3與配線圖案N1、N2之間之假想電阻值,根據該電阻值判定有無配線圖案N3與配線圖案N1、N2之間之極小短路部。藉此,針對配線圖案N3之第1種短路檢驗結束。Thereby, the wiring pattern N3 of the attention wiring pattern is connected to one side output portion (for example, the positive side output portion) of the power source portion 11 via the contact pin P, the switching element SW1 of the connection switching portion 12, and the switching element SW2a. The wiring patterns N1 and N2 of the wiring pattern are connected to the other side output unit (for example, the negative side output unit) of the power supply unit 11 via the contact pin P and the switching element SW1 and the switching element SW2b of the connection switching unit 12. Further, the power supply unit 11 applies a potential difference of the first applied potential difference between the wiring pattern N3 and the wiring patterns N1 and N2, and the current detecting unit A detects the wiring pattern N3 and the wiring patterns N1 and N2 at this time. The current flowing between the current (the current flowing between one of the output portions of the power supply unit 11 and the wiring pattern N3) is detected by the potential difference detecting portion V in the wiring pattern N3 and the wiring patterns N1, N2. The potential difference between the two. Then, the virtual resistance value between the wiring pattern N3 and the wiring patterns N1, N2 is calculated based on the detected current value and the potential difference, and the presence or absence of a very small short circuit between the wiring pattern N3 and the wiring patterns N1, N2 is determined based on the resistance value. unit. Thereby, the first short-circuit inspection for the wiring pattern N3 is completed.

又,在與接觸配線圖案N1-N3之接觸銷P對應之第1段開關元件SW1導通之狀態下,導通第2段開關元件SW2中分別與接觸配線圖案N1-N3之接觸銷P對應之開關元件SW2c,配線圖案N1-N3經由接觸銷P、開關元件SW1、SW2c連接接地電位。藉此,使因賦予電位差存留於配線圖案N1-N3之電荷放電。In the state in which the first-stage switching element SW1 corresponding to the contact pin P of the contact wiring pattern N1-N3 is turned on, the switch corresponding to the contact pin P of the contact wiring pattern N1-N3 in the second-stage switching element SW2 is turned on. The element SW2c and the wiring patterns N1-N3 are connected to the ground potential via the contact pin P and the switching elements SW1 and SW2c. Thereby, the electric charge remaining in the wiring patterns N1 - N3 due to the potential difference is discharged.

接著於檢驗步驟Sa3中,設定銷數第3多的配線圖案N2為注目配線圖案。設定除配線圖案N2與已曾被設定為注目配線圖案之配線圖案N4、N3外剩下的配線圖案N1為相對配線圖案。又,例如導通與接觸配線圖案N1、 N2之接觸銷P對應之連接切換部12之第1段開關元件SW1,並導通第2段開關元件SW2中與接觸配線圖案N1之接觸銷P對應之任一開關元件SW2b。此時,切斷第2段其他所有開關元件SW2。Next, in the inspection step Sa3, the wiring pattern N2 having the third largest number of pins is set as the attention wiring pattern. The wiring pattern N1 remaining except the wiring pattern N2 and the wiring patterns N4 and N3 which have been set as the attention wiring patterns is set as the opposite wiring pattern. Also, for example, the conduction and contact wiring patterns N1. The contact pin P of N2 corresponds to the first-stage switching element SW1 of the connection switching unit 12, and turns on any one of the switching elements SW2b corresponding to the contact pin P of the contact wiring pattern N1 in the second-stage switching element SW2. At this time, all the other switching elements SW2 in the second stage are cut off.

藉此,係注目配線圖案之配線圖案N2經由接觸銷P、連接切換部12之開關元件SW1及開關元件SW2a連接電源部11之一方側輸出部(例如正側輸出部)。且係相對配線圖案之配線圖案N1經由接觸銷P、連接切換部12之開關元件SW1及開關元件SW2b連接電源部11之另一方側輸出部(例如負側輸出部)。又,藉由電源部11在配線圖案N2與配線圖案N1之間賦予第1賦予電位差值之電位差,藉由電流偵測部A偵測此時在配線圖案N2與配線圖案N1之間流動之電流(嚴密而言,在電源部11之一方側輸出部與配線圖案N2之間流動之電流),並藉由電位差偵測部V偵測在配線圖案N2與配線圖案N1之間所賦予之電位差。接著,根據該經偵測之電流值與電位差值計算配線圖案N2與配線圖案N1之間之假想電阻值,根據該電阻值判定有無配線圖案N2與配線圖案N1之間之極小短路部。藉此,針對配線圖案N2之第1種短路檢驗結束,且針對配線圖案N1之第1種短路檢驗亦結束,所有針對配線圖案N1-N4之第1種短路檢驗結束。Thereby, the wiring pattern N2 of the attention wiring pattern is connected to one side output unit (for example, the positive side output unit) of the power supply unit 11 via the contact pin P and the switching element SW1 and the switching element SW2a of the connection switching unit 12. Further, the wiring pattern N1 with respect to the wiring pattern is connected to the other side output portion (for example, the negative side output portion) of the power supply portion 11 via the contact pin P, the switching element SW1 of the connection switching portion 12, and the switching element SW2b. Further, the power supply unit 11 applies a potential difference of the first applied potential difference between the wiring pattern N2 and the wiring pattern N1, and the current detecting unit A detects the current flowing between the wiring pattern N2 and the wiring pattern N1 at this time. (Strictly speaking, a current flowing between the one side output portion of the power supply unit 11 and the wiring pattern N2), and the potential difference detecting unit V detects the potential difference applied between the wiring pattern N2 and the wiring pattern N1. Then, a virtual resistance value between the wiring pattern N2 and the wiring pattern N1 is calculated based on the detected current value and the potential difference, and the presence or absence of an extremely small short-circuit portion between the wiring pattern N2 and the wiring pattern N1 is determined based on the resistance value. Thereby, the first short-circuit inspection for the wiring pattern N2 is completed, and the first short-circuit inspection for the wiring pattern N1 is also completed, and all of the first short-circuit inspections for the wiring patterns N1 - N4 are completed.

又,在與接觸配線圖案N1、N2之接觸銷P對應之第1段開關元件SW1導通之狀態下,導通第2段開關元件SW2中分別與接觸配線圖案N1、N2之接觸銷P對應之開關元件SW2c,配線圖案N1、N2經由接觸銷P、開關元件SW1、SW2c連接接地電位。藉此,使因賦予電位差存留於配線圖案N1、N2之電荷放電。In the state in which the first-stage switching element SW1 corresponding to the contact pin P of the contact wiring patterns N1 and N2 is turned on, the switch corresponding to the contact pin P of the contact wiring patterns N1 and N2 in the second-stage switching element SW2 is turned on. The element SW2c and the wiring patterns N1 and N2 are connected to the ground potential via the contact pin P and the switching elements SW1 and SW2c. Thereby, the electric charge remaining in the wiring patterns N1 and N2 due to the potential difference is discharged.

接著,進行第2種短路檢驗。第2種短路檢驗中,設定藉由電源部11在注目配線圖案與相對配線圖案之間所賦予之賦予電位差值為第2賦予電位差值(例如250V),如圖5表下側部分所示,以檢驗步驟Sb1、檢驗步驟Sb2、檢驗步驟Sb3之順序進展。Next, a second short-circuit test is performed. In the second short-circuit test, the potential difference value given between the target wiring pattern and the opposite wiring pattern by the power supply unit 11 is set to be the second applied potential difference value (for example, 250 V), as shown in the lower part of the table of FIG. 5, The progress is in the order of the inspection step Sb1, the inspection step Sb2, and the inspection step Sb3.

又,關於此第2種短路檢驗中藉由連接切換部12各開關元件SW1、SWb進行之切換動作,除對複數配線圖案N1-N4設定注目配線圖案時之順序與上述第1種短路檢驗相反所造成的不同外,與第1種短路檢驗時相同,故省略詳細說明。In the second type of short-circuit test, the switching operation by the switching elements SW1 and SWb of the connection switching unit 12 is performed, and the order of the attention of the plurality of wiring patterns N1 - N4 is opposite to that of the first type of short-circuit test. The difference is the same as that in the case of the first short-circuit test, and detailed description is omitted.

最初之檢驗步驟Sb1中,設定銷數最少的配線圖案N1為注目配線圖案,設定其以外所有的配線圖案N2-N3為相對配線圖案,藉由電源部11並經由接觸銷P及連接切換部12在配線圖案N1與配線圖案N2-N4之間賦予第2賦予電位差值之電位差。藉由電流偵測部A偵測此時在配線圖案N1與配線圖案N2-N4之間流動之電流(嚴密而言,在電源部11之一方側輸出部與配線圖案N1之間流動之電流),並藉由電位差偵測部V偵測在配線圖案N1與配線圖案N2-N4之間所賦予之電位差。接著,根據該經偵測之電流值與電位差值計算配線圖案N1與配線圖案N2-N4之間之假想電阻值,根據該電阻值判定有無因配線圖案N1與配線圖案N2-N4之間之火花造成的漏洩電流。藉此,針對配線圖案N1之第2種短路檢驗結束。又,配線圖案N1-N4經由接觸銷P及連接切換部12連接接地電位,使因賦予電位差存留於配線圖案N1-N4之電荷放電。In the first inspection step Sb1, the wiring pattern N1 having the smallest number of pins is set as the attention wiring pattern, and all the other wiring patterns N2-N3 are set as the opposite wiring patterns, and the power supply unit 11 passes through the contact pin P and the connection switching unit 12 A potential difference of the second applied potential difference is given between the wiring pattern N1 and the wiring pattern N2-N4. The current detecting unit A detects the current flowing between the wiring pattern N1 and the wiring pattern N2-N4 at this time (strictly, the current flowing between the output portion of the power supply unit 11 and the wiring pattern N1) The potential difference detection unit V detects the potential difference applied between the wiring pattern N1 and the wiring pattern N2-N4. Then, the virtual resistance value between the wiring pattern N1 and the wiring pattern N2-N4 is calculated based on the detected current value and the potential difference, and the presence or absence of the spark between the wiring pattern N1 and the wiring pattern N2-N4 is determined based on the resistance value. Leakage current caused. Thereby, the second short-circuit inspection for the wiring pattern N1 is completed. Further, the wiring patterns N1 - N4 are connected to the ground potential via the contact pin P and the connection switching portion 12, and the electric charges remaining in the wiring patterns N1 - N4 due to the potential difference are discharged.

接著於檢驗步驟Sb2中,設定銷數第2少的配線圖案N2為注目配線圖案。設定除配線圖案N2與已曾被設定為注目配線圖案之配線圖案N1外剩下的配線圖案N3、N4為相對配線圖案。又,藉由電源部11在配線圖案N2與配線圖案N3、N4之間賦予第2賦予電位差值之電位差,藉由電流偵測部A偵測此時在配線圖案N2與配線圖案N3、N4之間流動之電流(嚴密而言,在電源部11之一方側輸出部與配線圖案N2之間流動之電流),並藉由電位差偵測部V偵測在配線圖案N2與配線圖案N3、N4之間所賦予之電位差。接著,根據該經偵測之電流值與電位差值計算配線圖案N2與配線圖案N3、N4之間之假想電阻值,根據該電阻值判定有無因配線圖案N2與配線圖案N3、N4之間之火花造成的漏洩電流。藉此,針對配線圖案N2之第2種短路檢驗結束。又,配線圖案N2-N4經由接觸銷P及連接切換部12連接接地電位,使因賦予電位差存留於配線圖案N2-N4之電荷放電。Next, in the inspection step Sb2, the wiring pattern N2 having the second smallest number of pins is set as the attention wiring pattern. The wiring patterns N3 and N4 remaining except the wiring pattern N2 and the wiring pattern N1 which has been set as the attention wiring pattern are set as the opposite wiring patterns. Further, the power supply unit 11 applies a potential difference between the second applied potential difference between the wiring pattern N2 and the wiring patterns N3 and N4, and the current detecting unit A detects the wiring pattern N2 and the wiring patterns N3 and N4 at this time. The current flowing between the current (the current flowing between one of the output portions of the power supply unit 11 and the wiring pattern N2) is detected by the potential difference detecting portion V in the wiring pattern N2 and the wiring patterns N3 and N4. The potential difference between the two. Then, the virtual resistance value between the wiring pattern N2 and the wiring patterns N3 and N4 is calculated based on the detected current value and the potential difference value, and the presence or absence of the spark between the wiring pattern N2 and the wiring patterns N3 and N4 is determined based on the resistance value. Leakage current caused. Thereby, the second short-circuit inspection for the wiring pattern N2 is completed. Further, the wiring patterns N2-N4 are connected to the ground potential via the contact pin P and the connection switching unit 12, and discharge charges that are stored in the wiring patterns N2-N4 due to the potential difference.

接著於檢驗步驟Sb3中,設定銷數第3少的配線圖案N3為注目配線圖案。設定除配線圖案N3與已曾被設定為注目配線圖案之配線圖案N1、N2外剩下的配線圖案N4為相對配線圖案。又,藉由電源部11在配線圖案N3與配線圖案N4之間賦予第2賦予電位差值之電位差,藉由電流偵測部A偵測此時在配線圖案N3與配線圖案N4之間流動之電流(嚴密而言,在電源部11之一方側輸出部與配線圖案N3之間流動之電流),並藉由電位差偵測部V偵測在配線圖案N3與配線圖案N4之間所賦予之電位差。接著,根據該經偵測之電流值與電位差值計算配線圖案N3與配線圖案N4之間之假想電阻值,根據該電阻值判定有無因配線圖案N3與配線圖案N4之間之火花造成的漏洩電流。藉此,針對配線圖案N3之第2種短路檢驗結束,且針對配線圖案N4之第2種短路檢驗亦結束,所有針對配線圖案N1-N4之第2種短路檢驗結束。又,配線圖案N3、N4經由接觸銷P及連接切換部12連接接地電位,使因賦予電位差存留於配線圖案N3、N4之電荷放電。Next, in the inspection step Sb3, the wiring pattern N3 having the third smallest number of pins is set as the attention wiring pattern. The wiring pattern N4 remaining except the wiring pattern N3 and the wiring patterns N1 and N2 which have been set as the attention wiring patterns is set as the opposite wiring pattern. In addition, the power supply unit 11 applies a potential difference between the second applied potential difference between the wiring pattern N3 and the wiring pattern N4, and the current detecting unit A detects the current flowing between the wiring pattern N3 and the wiring pattern N4 at this time. (Strictly speaking, the current flowing between the one side output portion of the power supply unit 11 and the wiring pattern N3), and the potential difference detecting unit V detects the potential difference applied between the wiring pattern N3 and the wiring pattern N4. Then, the virtual resistance value between the wiring pattern N3 and the wiring pattern N4 is calculated based on the detected current value and the potential difference, and the leakage current caused by the spark between the wiring pattern N3 and the wiring pattern N4 is determined based on the resistance value. . Thereby, the second short-circuit inspection for the wiring pattern N3 is completed, and the second short-circuit inspection for the wiring pattern N4 is also completed, and all of the second short-circuit inspections for the wiring patterns N1 - N4 are completed. Moreover, the wiring patterns N3 and N4 are connected to the ground potential via the contact pin P and the connection switching unit 12, and the electric charges stored in the wiring patterns N3 and N4 due to the potential difference are discharged.

如以上,依本實施形態,第1種及第2種短路檢驗中針對複數配線圖案N注目配線圖案選定之順序係根據在檢驗時接觸配線圖案N之接觸銷P數決定。配線圖案N配線面積愈大接觸配線圖案N之接觸銷P數傾向愈多,故藉由根據接觸銷P數決定注目配線圖案選定之順序,可顧慮到配線圖案N、接觸該配線圖案N之接觸銷P及連接該接觸銷P之導線等所構成之整體靜電電容,決定注目配線圖案選定之順序。As described above, according to the present embodiment, the order of selecting the attention wiring pattern for the plurality of wiring patterns N in the first type and the second type of short-circuit inspection is determined based on the number of contact pins P that contact the wiring pattern N at the time of inspection. The larger the wiring pattern N wiring area, the greater the number of contact pins P that contact the wiring pattern N. Therefore, the order of selection of the attention wiring pattern is determined according to the number of contact pins P, and the contact pattern N and the contact with the wiring pattern N can be considered. The overall capacitance of the pin P and the wire connecting the contact pin P determines the order in which the attention wiring pattern is selected.

且設定賦予電位差值為與關於配線圖案N間極小短路部之檢驗對應之較小的值之第1種短路檢驗中,自複數配線圖案N中,接觸配線圖案N之接觸銷P數多者起依序設定為注目配線圖案,設定賦予電位差值為與關於配線圖案N間之火花造成電流漏洩之檢驗對應之較大的值之第2種短路檢驗中,自複數配線圖案N中,接觸配線圖案N之接觸銷P數少者起依序設定為注目配線圖案。In the first short-circuit test in which the potential difference is set to a small value corresponding to the inspection of the extremely short-circuit portion between the wiring patterns N, the number of contact pins P contacting the wiring pattern N from the plurality of wiring patterns N is large. In the second short-circuit test in which the potential difference value is set to a larger value corresponding to the test for causing the current leakage between the wiring pattern N, the contact wiring pattern is set to be the contact wiring pattern, and the contact wiring pattern is selected from the plurality of wiring patterns N. When the number of contact pins P of N is small, it is sequentially set as the attention wiring pattern.

因此,在賦予電位差值小的第1種短路檢驗中,自所接觸之接觸銷P多,包含接觸銷P等之整體靜電電容大的配線圖案N起依序設定為注目配線圖案,藉此可抑制對整體靜電電容大的配線圖案N賦予電位差及解除賦予之次數。其結果,可縮短對配線圖案N賦予電位差及解除賦予時之所需時間(充放電等所需之時間),實現檢驗速度之高速化。Therefore, in the first short-circuit test in which the potential difference is small, the number of contact pins P that are in contact with each other is large, and the wiring pattern N including the contact pins P and the like having a large overall capacitance is sequentially set as the attention wiring pattern. It is suppressed that the potential difference is given to the wiring pattern N having a large overall capacitance and the number of times of the release is given. As a result, the time required for applying the potential difference to the wiring pattern N and releasing the time (the time required for charge and discharge, etc.) can be shortened, and the inspection speed can be increased.

另一方面,在賦予電位差值大的第2種短路檢驗中,自所接觸之接觸銷P少,包含接觸銷P等之整體靜電電容小的配線圖案N起依序設定為注目配線圖案,藉此可抑制檢驗結果之誤判定,迴避檢驗可靠度降低。On the other hand, in the second short-circuit test in which the potential difference is large, the contact pin P that is in contact with each other is small, and the wiring pattern N including the small contact capacitance of the contact pin P or the like is sequentially set as the attention wiring pattern. This can suppress the erroneous determination of the test result, and the reliability of the avoidance test is lowered.

吾人認為之所以可如此藉由於第2種短路檢驗中自銷數小的配線圖案N起依序設定為注目配線圖案抑制檢驗結果誤判定,係因下列理由。In the second short-circuit test, the wiring pattern N having a small number of pins is sequentially set as the erroneous determination of the inspection result of the attention-grabbing wiring pattern, for the following reasons.

首先,檢討關於習知技術中於第2種短路檢驗內檢驗結果誤判定產生之原因。第2種短路檢驗中,在配線圖案N間賦予大的電位差,故因賦予電位差導致注目配線圖案及接觸銷等之帶電量大。因此,將累積於注目配線圖案之電荷在轉移至下一檢驗步驟時朝接地電位放電所需之放電時間長。另一方面,為使檢驗速度高速化,業界傾向縮短分配給各檢驗步驟之分配時間。因如此之情事,第2種短路檢驗中,於各檢驗步驟進行注目配線圖案與相對配線圖案之間之絕緣檢驗時,來自於前一檢驗步驟被設定為注目配線圖案之配線圖案N之放電會造成影響,此有可能會成為檢驗結果誤判定之原因。First, the reason for the erroneous determination of the test result in the second short-circuit test in the prior art is reviewed. In the second type of short-circuit test, a large potential difference is applied between the wiring patterns N. Therefore, the amount of charge of the attention wiring pattern, the contact pin, and the like is large due to the potential difference. Therefore, the discharge time required to discharge the electric charge accumulated in the attention wiring pattern to the ground potential at the time of shifting to the next inspection step is long. On the other hand, in order to speed up the inspection speed, the industry tends to shorten the distribution time allocated to each inspection step. In this case, in the second short-circuit test, when the insulation inspection between the target wiring pattern and the opposite wiring pattern is performed in each inspection step, the discharge from the wiring pattern N in which the previous inspection step is set as the attention wiring pattern is performed. This may cause the wrong result of the test result.

且如習知檢驗裝置,在第2種短路檢驗時自配線面積最大的配線圖案起依序設定為注目配線圖案之構成中,各檢驗步驟結束而轉移至下一檢驗步驟時,經常進行來自相較於在下一檢驗步驟被設定為注目配線圖案之配線圖案配線面積更大的配線圖案(此係在前一檢驗步驟係注目配線圖案之配線圖案)之放電。因此,來自此在前一檢驗步驟被設定為注目配線圖案之配線圖案之放電有可能對在各檢驗步驟針對注目配線圖案之絕緣檢驗更易於造成影響。In the second type of short-circuit inspection, the conventional inspection apparatus is configured such that the wiring pattern having the largest wiring area is sequentially set as the attention wiring pattern, and when the inspection steps are completed and the next inspection step is completed, the phase is often performed. The discharge is larger than the wiring pattern in which the wiring pattern wiring area of the attention wiring pattern is set to be larger in the next inspection step (this is the wiring pattern of the attention wiring pattern in the previous inspection step). Therefore, the discharge from the wiring pattern which is set as the attention wiring pattern in the previous inspection step is likely to be more susceptible to the insulation inspection for the attention wiring pattern in each inspection step.

相對於此,本實施形態中,在第2種短路檢驗各檢驗步驟Sb1-Sb3之針對注目配線圖案之絕緣檢驗內,自銷數小的配線圖案N起依序設定為注目配線圖案。藉此,在各檢驗步驟Sb1-Sb3結束而轉移至下一檢驗步驟時,包含於前一檢驗步驟Sb1-Sb3曾被設定為注目配線圖案之配線圖案N之接觸銷P等之整體靜電電容小於包含在下一檢驗步驟Sb1-Sb3被設定為注目配線圖案之配線圖案N之接觸銷P等之整體靜電電容。因此,在檢驗步驟Sb1-Sb3間轉移時,來自在前一檢驗步驟Sb1-Sb3曾被設定為注目配線圖案之配線圖案N之放電相較於對在下一檢驗步驟Sb1-Sb3會被設定為注目配線圖案之配線圖案N所進行之電位差賦予時充電所需之時間其可在較短時間內結束。其結果,吾人認為可抑制來自在前一檢驗步驟Sb1-Sb3曾被設定為注目配線圖案之配線圖案N之放電對在下一檢驗步驟Sb1-Sb3針對注目配線圖案之絕緣檢驗造成影響之機率。On the other hand, in the insulation inspection for the attention wiring pattern of each of the second short-circuit inspection inspection steps Sb1 - Sb3 in the second short-circuit inspection, the wiring pattern N having a small number of pins is sequentially set as the attention wiring pattern. Thereby, when the respective inspection steps Sb1 - Sb3 are completed and the process proceeds to the next inspection step, the overall electrostatic capacitance of the contact pin P or the like included in the wiring pattern N of the previous inspection step Sb1 - Sb3 is set to be smaller than the contact pin P of the attention wiring pattern The entire electrostatic capacitance of the contact pin P or the like which is set as the wiring pattern N of the attention wiring pattern in the next inspection step Sb1 - Sb3 is included. Therefore, when the transfer between the inspection steps Sb1 - Sb3 is performed, the discharge from the wiring pattern N which has been set as the attention wiring pattern in the previous inspection steps Sb1 - Sb3 is set to be noticed as compared with the pair in the next inspection steps Sb1 - Sb3 The time required for charging when the potential difference by the wiring pattern N of the wiring pattern is given can be ended in a short time. As a result, it is considered that the probability that the discharge from the wiring pattern N which has been set as the attention wiring pattern in the previous inspection steps Sb1 - Sb3 affects the insulation inspection of the attention wiring pattern in the next inspection steps Sb1 - Sb3 can be suppressed.

如此,依本實施形態,於第1種短路檢驗提升檢驗速度,並同時在因檢驗速度高速化導致易於發生檢驗結果誤判定之第2種短路檢驗中提升檢驗結果之可靠度,藉此作為第1種及第2種短路檢驗整體,可不降低檢驗結果可靠度,實現檢驗速度之提升。As described above, according to the first embodiment, the test speed is increased in the first type of short-circuit test, and the reliability of the test result is improved in the second type of short-circuit test which is prone to erroneous determination of the test result due to the increase in the speed of the test. One type and the second type of short-circuit test as a whole can improve the inspection speed without reducing the reliability of the test results.

且第1種及第2種短路檢驗自賦予電位差值小者起依序進行,故可迴避檢驗時因過電流導致極小短路部燒壞,並同時就配線圖案N間之絕緣性進行檢驗。Further, the first type and the second type of short-circuit test are sequentially performed from the case where the potential difference is small. Therefore, it is possible to avoid the occurrence of an extremely small short-circuit portion due to an overcurrent at the time of inspection, and at the same time, inspect the insulation between the wiring patterns N.

其次,參照圖6說明關於依上述實施形態之基板檢驗裝置1之變形例。此變形例中,控制部13於上述第1種短路檢驗及第2種短路檢驗各檢驗內選擇在各檢驗步驟用於偵測電流之電流偵測部A,俾複數電流偵測部A之使用頻率分散(使用頻率宜均等)。Next, a modification of the substrate inspection apparatus 1 according to the above embodiment will be described with reference to Fig. 6 . In this modification, the control unit 13 selects the current detecting unit A for detecting the current in each of the test steps in the first short-circuit test and the second short-circuit test, and uses the complex current detecting unit A. Frequency dispersion (use frequency should be equal).

根據圖6所示之具體例說明關於藉由此控制部13進行之電流偵測部A之選擇動作。圖6所示之例中,設置4個電流偵測部A1-A4,分配64根接 觸銷P給各電流偵測部A1-A4。更具體而言,分配接觸銷P1-P64給電流偵測部A1,分配接觸銷P65-P128給電流偵測部A2,分配接觸銷P129-P192給電流偵測部A3,分配接觸銷P193-P256給電流偵測部A4。The selection operation of the current detecting unit A by the control unit 13 will be described based on a specific example shown in FIG. In the example shown in Fig. 6, four current detecting units A1-A4 are provided, and 64 connections are allocated. The contact pin P is supplied to each of the current detecting portions A1 - A4. More specifically, the contact pins P1-P64 are assigned to the current detecting portion A1, the contact pins P65-P128 are assigned to the current detecting portion A2, the contact pins P129-P192 are assigned to the current detecting portion A3, and the contact pins P193-P256 are assigned. The current detecting unit A4 is supplied.

又,於第1種及第2種短路檢驗中,對配線圖案Na1-Na4進行絕緣檢驗。圖6「配線圖案與接觸銷之對應」欄之記載例中,於配線圖案Na1內,所接觸之接觸銷P數(銷數)為2,接觸銷P1-P64中任一接觸銷P,與接觸銷P65-P128中任一接觸銷P接觸。配線圖案Na2中,銷數為2,接觸銷P1-P64中任2個接觸銷P接觸。配線圖案Na3中,銷數為4,接觸銷P1-P64中任一接觸銷P、接觸銷P65-P128中任一接觸銷P、接觸銷P129-P192中任一接觸銷P與接觸銷P193-P256中任一接觸銷P接觸。配線圖案Na4中,銷數為2,接觸銷P129-P192中任一接觸銷P與接觸銷P193-P256中任一接觸銷P接觸。Further, in the first type and the second type of short-circuit inspection, the wiring patterns Na1 - Na4 were subjected to insulation inspection. In the example of the column of "correspondence between wiring pattern and contact pin" in Fig. 6, in the wiring pattern Na1, the number of contact pins P (number of pins) contacted is 2, and any one of the contact pins P1 - P64 is contact pin P, Any one of the contact pins P65-P128 is in contact. In the wiring pattern Na2, the number of pins is two, and any two of the contact pins P1 to P64 are in contact with each other. In the wiring pattern Na3, the number of pins is 4, any one of the contact pins P1-P64, one of the contact pins P65-P128, and one of the contact pins P129-P192 and the contact pin P193- Any contact pin P in P256 is in contact. In the wiring pattern Na4, the number of pins is two, and any one of the contact pins P129-P192 is in contact with any one of the contact pins P193-P256.

依圖6「配線圖案與接觸銷之對應」欄之記載例可知,設定配線圖案Na2為注目配線圖案時,於配線圖案Na2流動之電流雖僅可由電流偵測部A1偵測,但分別設定其他配線圖案Na1、Na3、Na4為注目配線圖案時,在用於偵測在配線圖案Na1、Na3、Na4流動之電流之電流偵測部A1-A4中有複數選項。具體而言,設定配線圖案Na1為注目配線圖案時,可選自於2個電流偵測部A1、A2。且設定配線圖案Na3為注目配線圖案時,可選自於4個電流偵測部A1-A4。且設定配線圖案Na4為注目配線圖案時,可選自於2個電流偵測部A3、A4。According to the example of the column "corresponding to the wiring pattern and the contact pin" in Fig. 6, when the wiring pattern Na2 is set as the attention wiring pattern, the current flowing through the wiring pattern Na2 can be detected only by the current detecting unit A1, but the other is set separately. When the wiring patterns Na1, Na3, and Na4 are the attention wiring patterns, there are plural options in the current detecting portions A1 - A4 for detecting the current flowing in the wiring patterns Na1, Na3, and Na4. Specifically, when the wiring pattern Na1 is set to be the attention wiring pattern, it can be selected from the two current detecting units A1 and A2. When the wiring pattern Na3 is set as the attention wiring pattern, it can be selected from the four current detecting units A1-A4. When the wiring pattern Na4 is set as the attention wiring pattern, it can be selected from the two current detecting units A3 and A4.

然而,習知之檢驗裝置中,未對複數電流偵測部A1-A4之使用頻率做任何顧慮,即使在可選擇複數電流偵測部A1-A4時,例如以圖6「配線圖案與接觸銷之對應」欄之圓形記號所示,亦經常使用與銷編號最小的接觸銷P對應之電流偵測部A1-A4。However, in the conventional inspection apparatus, there is no concern about the frequency of use of the complex current detecting sections A1 - A4, even when the complex current detecting sections A1 - A4 are selectable, for example, FIG. 6 "Wiring pattern and contact pin" As shown by the circular mark of the corresponding column, the current detecting portions A1 - A4 corresponding to the contact pin P having the smallest pin number are often used.

在此,依此變形例之構成中,例如以圖6「配線圖案與接觸銷之對應」欄之方形記號所示,於各檢驗步驟中設定各配線圖案Na1-Na4為注目配線 圖案時可選擇複數電流偵測部A1-A4之情形下,選擇使用之電流偵測部A1-A4,俾於第1種及第2種短路檢驗內電流偵測部A1-A4之使用頻率分散(使用頻率宜均等)。具體而言,設定配線圖案Na1為注目配線圖案時使用電流偵測部A2,設定配線圖案Na2為注目配線圖案時使用電流偵測部A1,設定配線圖案Na3為注目配線圖案時使用電流偵測部A3,設定配線圖案Na4為注目配線圖案時使用電流偵測部A4。Here, in the configuration of the modification, for example, as shown in the square symbol of the column "corresponding to the wiring pattern and the contact pin" in FIG. 6, each wiring pattern Na1-Na4 is set as the attention wiring in each inspection step. In the case where the pattern can select the complex current detecting portion A1-A4, the current detecting portion A1-A4 is selected, and the frequency of the current detecting portion A1-A4 is dispersed in the first type and the second type of short-circuit check. (The frequency of use should be equal). Specifically, when the wiring pattern Na1 is set as the attention wiring pattern, the current detecting unit A2 is used, when the wiring pattern Na2 is set as the attention wiring pattern, the current detecting unit A1 is used, and when the wiring pattern Na3 is set as the attention wiring pattern, the current detecting unit is used. A3, when the wiring pattern Na4 is set as the attention wiring pattern, the current detecting unit A4 is used.

藉此,於第1種及第2種短路檢驗中,可防止使用頻率偏向一部分電流偵測部A1-A4,防止一部分電流偵測部A1-A4之劣化較其他電流偵測部A1-A4快。Therefore, in the first type and the second type of short-circuit test, it is possible to prevent the use frequency from being biased toward a part of the current detecting portions A1 - A4, and to prevent the deterioration of a part of the current detecting portions A1 - A4 from being faster than the other current detecting portions A1 - A4 .

作為關於此變形例之構成之另一變形例,於各檢驗步驟中設定各配線圖案Na1-Na4為注目配線圖案時可選擇複數電流偵測部A1-A4之情形下,亦可同時使用該可選擇之複數電流偵測部A1-A4及複數放電路徑。藉此,可減少於電流偵測部A1-A4流動之電流值,減輕電流偵測部A1-A4之負擔,並可實現縮短充放電時間。As another modification of the configuration of the modification, in the case where each of the wiring patterns Na1 - Na4 is set as the attention wiring pattern in each inspection step, the plurality of current detecting portions A1 - A4 can be selected, and the same can be used at the same time. The plurality of current detecting units A1-A4 and the plurality of discharge paths are selected. Thereby, the current value flowing through the current detecting portions A1 - A4 can be reduced, the burden on the current detecting portions A1 - A4 can be reduced, and the charge and discharge time can be shortened.

且上述基板檢驗裝置1中雖已例示於第1種及第2種短路檢驗內,在注目配線圖案與相對配線圖案之間賦予電位差時,賦予電位差俾注目配線圖案為正側之例,但作為上述基板檢驗裝置1之另一變形例,亦可賦予電位差俾相對配線圖案為正側,亦可在注目配線圖案與相對配線圖案之間更換電位差極性,賦予電位差2次以進行檢驗。In the above-described substrate inspection apparatus 1, the first and second types of short-circuit inspections are exemplified, and when a potential difference is applied between the attention wiring pattern and the opposite wiring pattern, the potential difference 俾 the attention wiring pattern is the positive side, but In another modification of the substrate inspection apparatus 1, the potential difference 赋予 may be set to the positive side with respect to the wiring pattern, or the potential difference polarity may be changed between the attention wiring pattern and the opposite wiring pattern, and the potential difference may be applied twice to perform inspection.

A1-A2‧‧‧電流偵測部A1-A2‧‧‧ Current Detection Department

P1、P2‧‧‧接觸銷P1, P2‧‧‧ contact pin

PG1、PG2‧‧‧銷群組PG1, PG2‧‧‧ sales group

SW1、SW2、SW2a-SW2c‧‧‧開關元件SW1, SW2, SW2a-SW2c‧‧‧ switching elements

V‧‧‧電位差偵測部V‧‧‧potential difference detection unit

1‧‧‧基板檢驗裝置1‧‧‧Substrate inspection device

11‧‧‧電源部11‧‧‧Power Department

12‧‧‧連接切換部12‧‧‧Connection Switching Department

13‧‧‧控制部13‧‧‧Control Department

Claims (4)

一種基板檢驗裝置,於設在被檢驗基板的複數配線圖案之間賦予電位差,並同時取出檢驗用信號,藉此檢驗該配線圖案之間的電氣特性,其特徵在於包含:複數接觸銷,與設定於設在該被檢驗基板的該各配線圖案之複數檢驗點接觸;電源部,經由該複數接觸銷在該配線圖案之間賦予電位差,且可變更賦予該配線圖案之間之電位差大小;偵測部,藉由該複數接觸銷偵測關於該配線圖案間之電氣特性之信號;連接切換部,包含複數開關元件,藉由導通、切斷該各開關元件,以切換該複數接觸銷與該電源部及該偵測部之間的電性連接關係;及控制部,控制該電源部及該連接切換部之該複數開關元件,並根據該偵測部之偵測結果檢驗該配線圖案間之電氣特性;且該控制部進行檢驗處理動作,以進行賦予該配線圖案間之電位差值亦即賦予電位差值不同的複數電特性檢驗;在藉由該控制部進行之該複數檢驗處理動作中,於該檢驗處理動作內的複數檢驗步驟中,將該複數配線圖案其中任一者依順序設定為注目配線圖案,且於該各檢驗步驟中,在於該時點被設定為注目配線圖案之配線圖案與相對配線圖案之間,自該電源部經由該接觸銷賦予對應於該檢驗處理動作之該賦予電位差值的電位差,並根據該偵測部之偵測結果檢驗該注目配線圖案與該相對配線圖案之間的電氣特性,而該相對配線圖案係由該複數配線圖案中於該時點被設定為該注目配線圖案之配線圖案及在該檢驗處理動作內曾經被設定為注目配線圖案之配線圖案以外的配線圖案所構成;在該複數電特性檢驗中之該賦予電位差值未達於既定基準位準之電特性檢驗中,自該複數配線圖案中之接觸配線圖案的該接觸銷數多者起,依序設定其為該注目配線圖案;而在該複數電特性檢驗中之該賦予電位差值在該既定基準位準以上之電特性檢驗中,自該複數配線圖案中之接觸配線圖案的該接觸銷數少者起,依序設定其為該注目配線圖案。A substrate inspection apparatus that applies a potential difference between a plurality of wiring patterns provided on a substrate to be inspected, and simultaneously extracts an inspection signal, thereby checking electrical characteristics between the wiring patterns, and is characterized by comprising: a plurality of contact pins, and setting And contacting a plurality of inspection points of the wiring patterns provided on the substrate to be inspected; the power supply unit applies a potential difference between the wiring patterns via the plurality of contact pins, and can change a potential difference between the wiring patterns; a signal for detecting electrical characteristics between the wiring patterns by the plurality of contact pins; and a connection switching portion including a plurality of switching elements for switching the plurality of contact pins and the power source by turning on and off the switching elements And a control unit that controls the plurality of switching elements of the power supply unit and the connection switching unit, and checks the electrical connection between the wiring patterns according to the detection result of the detecting unit a characteristic; and the control unit performs a verification processing operation to perform a plurality of potential difference values given to the potential difference between the wiring patterns In the complex inspection processing operation performed by the control unit, in the plurality of inspection steps in the inspection processing operation, the plurality of wiring patterns are sequentially set as the attention wiring pattern, and In each of the inspection steps, the time difference is set between the wiring pattern of the target wiring pattern and the opposing wiring pattern, and the potential difference corresponding to the applied potential difference corresponding to the inspection processing operation is given from the power supply unit via the contact pin, and The detection result of the detecting unit checks the electrical characteristics between the attention wiring pattern and the opposite wiring pattern, and the relative wiring pattern is set to the wiring pattern of the attention wiring pattern at the time of the plurality of wiring patterns. In the inspection processing operation, a wiring pattern other than the wiring pattern of the attention wiring pattern is formed; in the electrical characteristic test, the electric potential difference is not up to the predetermined reference level, and the plurality When the number of the contact pins of the contact wiring pattern in the wiring pattern is large, the contact wiring pattern is sequentially set. And in the electrical characteristic test in which the potential difference value is greater than the predetermined reference level in the verification of the complex electrical characteristics, the number of the contact pins of the contact wiring pattern in the plurality of wiring patterns is set to be sequentially For this attention wiring pattern. 一種基板檢驗裝置,於設在被檢驗基板的複數配線圖案之間賦予電位差,並同時取出檢驗用信號,藉此檢驗該配線圖案之間的電氣特性,其特徵在於包含:複數接觸銷,與設定於設在該被檢驗基板的該各配線圖案之複數檢驗點接觸;電源部,經由該複數接觸銷在該配線圖案之間賦予電位差,且可變更賦予該配線圖案之間之電位差大小;偵測部,藉由該複數接觸銷偵測關於該配線圖案間之電氣特性之信號;連接切換部,包含複數開關元件,藉由導通、切斷該各開關元件以切換該複數接觸銷與該電源部及該偵測部之間的電性連接關係;及控制部,控制該電源部及該連接切換部之該複數開關元件,並根據該偵測部之偵測結果檢驗該配線圖案間之電氣特性;且該控制部進行檢驗處理動作,以進行賦予該配線圖案之間之電位差值亦即賦予電位差值不同之複數電特性檢驗,在藉由該控制部進行之該複數檢驗處理動作中,於該檢驗處理動作內的複數檢驗步驟中,將該複數配線圖案其中任一者依順序設定為注目配線圖案,且於該各檢驗步驟中,在於該時點被設定為注目配線圖案之配線圖案與相對配線圖案之間,自該電源部經由該接觸銷賦予對應於該檢驗處理動作之該賦予電位差值的電位差,並根據該偵測部之偵測結果檢驗該注目配線圖案與該相對配線圖案之間的電氣特性,而該相對配線圖案係由該複數配線圖案中於該時點被設定為該注目配線圖案之配線圖案及在該檢驗處理動作內曾經被設定為注目配線圖案之配線圖案以外的配線圖案所構成;該複數電特性檢驗中包含第1種及第2種短路檢驗,在該1種短路檢驗中,設定該賦予電位差值為:鄰接之該配線圖案之間為假性短路,或由細微的細線部短路之極小短路部所導通,且該極小短路部不因流過該極小短路部之電流而燒壞之值,在該第2種短路檢驗中,設定該賦予電位差值為高於該第1種短路檢驗之該賦予電位差值,且用來偵測因鄰接之該配線圖案之間之火花所導致的電流漏洩之值, 在該第1種短路檢驗中,自該複數配線圖案中,接觸配線圖案之該接觸銷數多者起依序設定其為該注目配線圖案;在該第2種短路檢驗中,自該複數配線圖案中,接觸配線圖案之該接觸銷數少者起依序設定其為該注目配線圖案。A substrate inspection apparatus that applies a potential difference between a plurality of wiring patterns provided on a substrate to be inspected, and simultaneously extracts an inspection signal, thereby checking electrical characteristics between the wiring patterns, and is characterized by comprising: a plurality of contact pins, and setting And contacting a plurality of inspection points of the wiring patterns provided on the substrate to be inspected; the power supply unit applies a potential difference between the wiring patterns via the plurality of contact pins, and can change a potential difference between the wiring patterns; a signal for detecting electrical characteristics between the wiring patterns by the plurality of contact pins; and a connection switching portion including a plurality of switching elements for switching the plurality of contact pins and the power supply portion by turning on and off the switching elements And an electrical connection relationship between the detecting unit; and a control unit that controls the plurality of switching elements of the power supply unit and the connection switching unit, and checks electrical characteristics between the wiring patterns according to the detection result of the detecting unit And the control unit performs a verification processing operation to perform a plurality of potential differences that are given to the potential difference between the wiring patterns In the complex check processing operation performed by the control unit, in the complex check processing in the check processing operation, the complex wiring pattern is sequentially set as the attention wiring pattern, and In each of the inspection steps, the time difference is set between the wiring pattern of the target wiring pattern and the opposing wiring pattern, and the potential difference corresponding to the applied potential difference corresponding to the inspection processing operation is given from the power supply unit via the contact pin, and The detection result of the detecting unit checks the electrical characteristics between the attention wiring pattern and the opposite wiring pattern, and the relative wiring pattern is set to the wiring pattern of the attention wiring pattern at the time of the plurality of wiring patterns. In the inspection processing operation, a wiring pattern other than the wiring pattern of the attention wiring pattern is formed; the first electrical characteristic inspection includes the first type and the second short-circuit inspection, and in the one type of short-circuit inspection, the assignment is set. The potential difference is: a short circuit between the adjacent wiring patterns, or a short circuit shorted by a fine thin line portion. And the value of the minimum short-circuit portion that is not burned by the current flowing through the minimum short-circuit portion, and in the second short-circuit test, the set potential difference is set higher than the first short-circuit test. a potential difference value and used to detect a value of current leakage caused by a spark between adjacent wiring patterns, In the first short-circuit inspection, the number of the contact pins contacting the wiring pattern is set to be the attention wiring pattern in the plurality of wiring patterns, and the second wiring is used in the second short-circuit inspection. In the pattern, the number of the contact pins of the contact wiring pattern is set to be the attention wiring pattern in order. 如申請專利範圍第1或2項之基板檢驗裝置,其中在藉由該控制部進行之該複數檢驗處理動作中,該複數電特性檢驗係自該賦予電位差值小者起依序進行。The substrate inspection apparatus according to claim 1 or 2, wherein in the complex inspection processing operation by the control unit, the plurality of electrical characteristic inspections are sequentially performed from the small difference in the applied potential difference. 如申請專利範圍第1或2項之基板檢驗裝置,其中該偵測部包含複數電流偵測部,該複數電流偵測部分別被分配給將該複數接觸銷分為複數群組而構成之複數接觸銷群組,藉由屬於其對應之接觸銷群組之接觸銷,來偵測在該注目配線圖案或該相對配線圖案與該電源部之間流過之電流,該控制部於該各電特性檢驗內選擇在該各檢驗步驟用於偵測該電流之該偵測部之該電流偵測部,俾分散該複數電流偵測部之使用頻率。The substrate inspection device of claim 1 or 2, wherein the detection unit includes a plurality of current detection units, and the plurality of current detection units are respectively assigned to the plurality of contact pins divided into a plurality of groups The contact pin group detects a current flowing between the target wiring pattern or the opposite wiring pattern and the power supply portion by a contact pin belonging to the corresponding contact pin group, and the control portion is configured to be electrically In the characteristic test, the current detecting portion of the detecting portion for detecting the current in each of the detecting steps is selected to disperse the frequency of use of the complex current detecting portion.
TW101136949A 2011-10-06 2012-10-05 Substrate testing device TWI438455B (en)

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