JP2008128758A - Method for measuring insulating resistance of electrostatic countermeasure part - Google Patents

Method for measuring insulating resistance of electrostatic countermeasure part Download PDF

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JP2008128758A
JP2008128758A JP2006312599A JP2006312599A JP2008128758A JP 2008128758 A JP2008128758 A JP 2008128758A JP 2006312599 A JP2006312599 A JP 2006312599A JP 2006312599 A JP2006312599 A JP 2006312599A JP 2008128758 A JP2008128758 A JP 2008128758A
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probe
contact
resistance
insulation resistance
electrode
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Hiroshi Makino
博 牧野
Fumihiko Makino
文彦 牧野
Yasuhiro Kuroda
康裕 黒田
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for measuring the insulating resistance of an electrostatic countermeasure part, which can simultaneously carry out a contact check of a probe and a measurement of the insulating resistance of the electrostatic countermeasure part, by using a simple facility configuration. <P>SOLUTION: The method for measuring the insulating resistance of the electrostatic countermeasure part comprises: bringing a first probe 26 and a second probe 27 to contact with a first electrode 22 formed on the upper surface of the electrostatic countermeasure part 25; bringing a third probe 28 and a fourth probe 29 to contact with a second electrode 23 formed on the upper surface of the electrostatic countermeasure part 25; and measuring the insulating resistance of the electrostatic countermeasure part 25 by using an external resistor 31 which is connected to the electrostatic countermeasure part 25 in parallel and has a resistance value being 1/5 or less of insulating resistance values of the second and/or fourth probes 27, 29 measured in their contact miss states. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は電子機器を静電気から保護する静電気対策部品の絶縁抵抗測定方法に関するものである。   The present invention relates to a method for measuring an insulation resistance of an antistatic component for protecting an electronic device from static electricity.

近年、携帯電話等の電子機器の小型化、高性能化が急速に進み、それに伴い電子機器に用いられる電子部品の小型化も急速に進んでいる。しかしながら、その反面、この小型化に伴って電子機器や電子部品の耐電圧は低下するもので、これにより、人体と電子機器の端子が接触した時に発生する静電気パルスによって機器内部の電気回路が損傷するのが増えてきている。これは静電気パルスによって１ナノ秒以下の立ち上がり速度でかつ数百ボルトから数キロボルトという高電圧が機器内部の電気回路に印加されるからである。   In recent years, electronic devices such as mobile phones have been rapidly reduced in size and performance, and accordingly, electronic components used in electronic devices have also been rapidly reduced in size. However, with this miniaturization, the withstand voltage of electronic equipment and electronic components decreases, and this causes damage to the electrical circuits inside the equipment due to electrostatic pulses generated when the human body contacts the terminals of the electronic equipment. Increasingly. This is because a high voltage of several hundred volts to several kilovolts is applied to an electric circuit inside the device at a rising speed of 1 nanosecond or less by electrostatic pulses.

このような静電気対策として、図３（ａ）〜（ｃ）に示すように、絶縁基板１の上面の両端部に形成された第１の電極２および第２の電極３によって形成されるギャップ４を充填するように過電圧保護材料層５を配置し、さらにこの過電圧保護材料層５と第１の電極２および第２の電極３を覆う保護膜６を設けた静電気対策部品が提案されている。このタイプの静電気対策部品は、通常時は抵抗値が１×１０10Ω〜１×１０12Ωと高いため、電流は流れないが、静電気等の過電圧が印加された場合には、過電圧保護材料層５のインピーダンスが低下して放電電流が流れるものである。そこで、このタイプの静電気対策部品の特性検査工程においては、第１の電極２および第２の電極３によって形成されるギャップ４がショートしていないかを検査する絶縁抵抗測定工程が必要不可欠になるものである。 As a countermeasure against such static electricity, as shown in FIGS. 3A to 3C, a gap 4 formed by the first electrode 2 and the second electrode 3 formed at both ends of the upper surface of the insulating substrate 1. There has been proposed an anti-static component in which an overvoltage protection material layer 5 is disposed so as to fill, and a protective film 6 is provided to cover the overvoltage protection material layer 5, the first electrode 2, and the second electrode 3. This type of anti-static component normally has a high resistance value of 1 × 10 10 Ω to 1 × 10 12 Ω, so no current flows, but when overvoltage such as static electricity is applied, overvoltage protection material The impedance of the layer 5 is lowered and a discharge current flows. Therefore, in the characteristic inspection process for this type of antistatic component, an insulation resistance measurement process for inspecting whether the gap 4 formed by the first electrode 2 and the second electrode 3 is short-circuited is indispensable. Is.

図４は、従来実施していた測定プローブと電極との接触状態を確認するコンタクトチェックの方法を示す図であり、第１のコンタクトチェック回路７に取り付けられた第１のプローブ８と第２のプローブ９が第１の電極２に接するように、また第２のコンタクトチェック回路１０に取り付けられた第３のプローブ１１と第４のプローブ１２が第２の電極３に接するように構成されている。第１のコンタクトチェック回路７および第２のコンタクトチェック回路１０にはそれぞれ直流電源装置、スイッチ、指示計器が設置されている。ここで、それぞれのプローブと電極の接触状態が良好であれば、第１のコンタクトチェック回路７および第２のコンタクトチェック回路１０からそれぞれ矢印の方向に電流が流れ、それぞれのプローブと電極とのコンタクトチェックが実施できるものである。   FIG. 4 is a diagram showing a contact check method for confirming the contact state between the measurement probe and the electrode, which has been conventionally performed. The first probe 8 attached to the first contact check circuit 7 and the second probe The probe 9 is configured to contact the first electrode 2, and the third probe 11 and the fourth probe 12 attached to the second contact check circuit 10 are configured to contact the second electrode 3. . The first contact check circuit 7 and the second contact check circuit 10 are each provided with a DC power supply device, a switch, and an indicating instrument. Here, if the contact state between each probe and the electrode is good, current flows from the first contact check circuit 7 and the second contact check circuit 10 in the directions of the arrows, and the contact between each probe and the electrode. Check can be performed.

それぞれのプローブと電極とのコンタクトチェックを終えた後、図５に示すように、第２のプローブ９と第４のプローブ１２を絶縁抵抗測定器１４に取り付けて矢印の方向に電流を流して、静電気対策部品１３の第１の電極２と第２の電極３の間の抵抗値を測定し、静電気対策部品１３の良否を判定するものである。   After the contact check between each probe and the electrode, as shown in FIG. 5, the second probe 9 and the fourth probe 12 are attached to the insulation resistance measuring instrument 14 and a current is passed in the direction of the arrow. The resistance value between the first electrode 2 and the second electrode 3 of the electrostatic countermeasure component 13 is measured, and the quality of the electrostatic countermeasure component 13 is judged.

なお、この出願の発明に関する先行技術文献情報としては、例えば、特許文献１が知られている。
特開平５−２４９１５７号公報 As prior art document information relating to the invention of this application, for example, Patent Document 1 is known.
JP-A-5-249157

上記した従来の絶縁抵抗測定方法においては、図６に示すように例えば第４のプローブ１２が第２の電極３から浮いてコンタクトミスの状態１５が発生した場合、静電気対策部品１３のショート不良品、すなわち第１の電極２と第２の電極３の間がショートした不良品を誤って良品と判定する恐れがあった。   In the above conventional insulation resistance measuring method, as shown in FIG. 6, for example, when the fourth probe 12 is lifted from the second electrode 3 and a contact failure state 15 occurs, the ESD countermeasure component 13 is short-circuit defective. That is, there is a risk that a defective product in which the first electrode 2 and the second electrode 3 are short-circuited is erroneously determined as a good product.

そこで特許文献１には、測定プローブの接触検出装置として、試料の絶縁抵抗を測定する測定プローブに高周波発振器からの高周波信号を重畳する重畳手段と、測定プローブから試料の浮遊容量を介して流れる高周波信号を検出する高周波信号検出部と、高周波信号検出部の検出信号と基準値とを比較して測定プローブが試料に接触したか否かを判定する判定部とを備えた構成が開示されているが、本発明で対象としている被測定物（静電気対策部品１３）の静電容量は０．１ｐＦ程度と極めて低く、被測定物に流れる高周波信号の検出は困難なものである。またコンタクトチェックのために高周波発振器や高周波信号検出器を別途準備する必要があり、装置が極めて煩雑になるものである。   Therefore, Patent Document 1 discloses, as a contact detection device for a measurement probe, a superimposing unit that superimposes a high-frequency signal from a high-frequency oscillator on a measurement probe that measures the insulation resistance of the sample, and a high-frequency that flows from the measurement probe through the stray capacitance of the sample. A configuration is disclosed that includes a high-frequency signal detection unit that detects a signal, and a determination unit that compares the detection signal of the high-frequency signal detection unit with a reference value to determine whether or not the measurement probe has contacted the sample. However, the capacitance of the object to be measured (electrostatic countermeasure component 13) which is a subject of the present invention is as extremely low as about 0.1 pF, and it is difficult to detect a high-frequency signal flowing through the object to be measured. In addition, it is necessary to separately prepare a high-frequency oscillator and a high-frequency signal detector for contact check, which makes the apparatus extremely complicated.

本発明は上記従来の課題を解決するもので、簡単な設備構成により、プローブのコンタクトチェックと静電気対策部品の絶縁抵抗測定を同時に実施できる静電気対策部品の絶縁抵抗測定方法を提供することを目的とするものである。   An object of the present invention is to solve the above-described conventional problems, and to provide an insulation resistance measuring method for an antistatic component that can simultaneously perform a contact check of a probe and an insulation resistance measurement of the antistatic component with a simple equipment configuration. To do.

上記目的を達成するために、本発明は以下の構成を有するものである。   In order to achieve the above object, the present invention has the following configuration.

本発明の請求項１に記載の発明は、第１のプローブおよび第２のプローブと、第３のプローブおよび第４のプローブと、前記第２のプローブと第４のプローブとの間に接続された絶縁抵抗測定器と、前記第１のプローブと第３のプローブとの間に接続された外部抵抗とを備え、前記第１のプローブと第２のプローブを静電気対策部品の上面に形成された第１の電極に接触させ、かつ前記第３のプローブと第４のプローブを前記静電気対策部品の上面に形成された第２の電極に接触させ、さらに前記静電気対策部品と並列接続関係にある外部抵抗は抵抗値が前記第２および／または第４のプローブのコンタクトミス時の絶縁抵抗測定値の５分の１以下のものを用いて前記静電気対策部品の絶縁抵抗を測定するようにしたもので、この絶縁抵抗測定方法によれば、前記第１のプローブと第２のプローブを静電気対策部品の上面に形成された第１の電極に接触させ、かつ前記第３のプローブと第４のプローブを前記静電気対策部品の上面に形成された第２の電極に接触させ、さらに前記静電気対策部品と並列接続関係にある外部抵抗は抵抗値が前記第２および／または第４のプローブのコンタクトミス時の絶縁抵抗測定値の５分の１以下のものを用いて前記静電気対策部品の絶縁抵抗を測定するようにしているため、静電気対策部品の特性が正常で、かつ第１ないし第４のプローブの接触も正常な場合には、絶縁抵抗測定器の測定値は外部抵抗の抵抗値に近い値を示すようになり、一方、静電気対策部品の特性が正常で、かつ第２および／または第４のプローブの接触が異常な場合には、絶縁抵抗測定器の測定値は空気絶縁状態の抵抗値を示すようになるもので、このことからも明らかなように、良品を正常に測定している場合と、プローブのコンタクトミスで測定できていない場合とを絶縁抵抗測定器の抵抗値測定結果のみで判別することができるため、簡単な設備構成により、プローブのコンタクトチェックと静電気対策部品の絶縁抵抗測定を同時に実施できるという作用効果が得られるものである。   The invention according to claim 1 of the present invention is connected between the first probe and the second probe, the third probe and the fourth probe, and the second probe and the fourth probe. An insulation resistance measuring instrument and an external resistor connected between the first probe and the third probe, and the first probe and the second probe are formed on the upper surface of the antistatic component. An external device that is in contact with the first electrode and that has the third probe and the fourth probe in contact with the second electrode formed on the upper surface of the antistatic component, and that is connected in parallel with the antistatic component. The resistance is such that the insulation resistance of the anti-static component is measured by using a resistance value of one fifth or less of the measured insulation resistance value when the second and / or the fourth probe contact is missed. This insulation resistance measurement According to the method, the first probe and the second probe are brought into contact with the first electrode formed on the upper surface of the antistatic component, and the third probe and the fourth probe are brought into contact with the antistatic component. The external resistance that is in contact with the second electrode formed on the upper surface and is connected in parallel with the antistatic component has a resistance value measured when the second and / or fourth probe is in contact with the contact resistance. Since the insulation resistance of the anti-static component is measured using one-fifth or less of the anti-static component, the characteristics of the anti-static component are normal and the first to fourth probe contacts are also normal. The measured value of the insulation resistance measuring instrument shows a value close to the resistance value of the external resistance, while the characteristics of the static electricity countermeasure component are normal and the contact of the second and / or fourth probe is abnormal. in case of, The measured value of the edge resistance measuring instrument shows the resistance value in the air insulation state. As is clear from this, it can be measured when the non-defective product is measured normally and when the probe is in contact error. Since it is possible to distinguish the case of no insulation from only the resistance value measurement result of the insulation resistance measuring instrument, it is possible to obtain the effect that the contact check of the probe and the insulation resistance measurement of the anti-static component can be simultaneously performed with a simple equipment configuration. Is.

以上のように本発明の静電気対策部品の絶縁抵抗測定方法は、第１のプローブと第２のプローブを静電気対策部品の上面に形成された第１の電極に接触させ、かつ前記第３のプローブと第４のプローブを前記静電気対策部品の上面に形成された第２の電極に接触させ、さらに前記静電気対策部品と並列接続関係にある外部抵抗は抵抗値が前記第２および／または第４のプローブのコンタクトミス時の絶縁抵抗測定値の５分の１以下のものを用いて前記静電気対策部品の絶縁抵抗を測定するようにしているため、静電気対策部品の特性が正常で、かつ第１ないし第４のプローブの接触も正常な場合には、絶縁抵抗測定器の測定値は外部抵抗の抵抗値に近い値を示すようになり、一方、静電気対策部品の特性が正常で、かつ第２および／または第４のプローブの接触が異常な場合には、絶縁抵抗測定器の測定値は空気絶縁状態の抵抗値を示すようになるもので、このことからも明らかなように、良品を正常に測定している場合と、プローブのコンタクトミスで測定できていない場合とを絶縁抵抗測定器の抵抗値測定結果のみで判別することができるため、簡単な設備構成により、プローブのコンタクトチェックと静電気対策部品の絶縁抵抗測定を同時に実施できるという優れた効果を奏するものである。   As described above, in the method for measuring the insulation resistance of the antistatic component of the present invention, the first probe and the second probe are brought into contact with the first electrode formed on the upper surface of the antistatic component, and the third probe is used. And the fourth probe are in contact with the second electrode formed on the upper surface of the antistatic component, and the resistance value of the external resistor in parallel connection with the antistatic component is the second and / or fourth Since the insulation resistance of the anti-static component is measured by using one-fifth or less of the measured insulation resistance at the time of probe contact failure, the characteristics of the anti-static component are normal and the first to first When the contact of the fourth probe is also normal, the measured value of the insulation resistance measuring instrument shows a value close to the resistance value of the external resistance, while the characteristics of the antistatic component are normal and the second and / Or first When the contact of the probe is abnormal, the measured value of the insulation resistance measuring instrument shows the resistance value of the air insulation state. As is clear from this, the non-defective product is measured normally. And the case where measurement is not possible due to a contact error of the probe, it is possible to determine only by the resistance value measurement result of the insulation resistance measuring instrument. It has an excellent effect that the measurement can be performed simultaneously.

以下、本発明の一実施の形態における静電気対策部品の絶縁抵抗測定方法について、図面を参照しながら説明する。   Hereinafter, a method for measuring an insulation resistance of an anti-static component according to an embodiment of the present invention will be described with reference to the drawings.

図１は本発明の一実施の形態における静電気対策部品の絶縁抵抗測定方法を示す図、図２は同静電気対策部品の絶縁抵抗測定方法を示す等価回路図である。   FIG. 1 is a diagram showing a method for measuring insulation resistance of a static electricity countermeasure component according to an embodiment of the present invention, and FIG. 2 is an equivalent circuit diagram showing a method for measuring insulation resistance of the static electricity countermeasure component.

図１は絶縁基板２１の上面の両端部に第１の電極２２および第２の電極２３を形成し、そしてこの第１の電極２２と第２の電極２３との間に形成された幅約１０μｍのギャップ（図示せず）に過電圧保護材料層（図示せず）を充填し、その後、前記第１の電極２２と第２の電極２３および過電圧保護材料層（図示せず）を保護膜２４で覆うようにしたタイプの静電気対策部品２５の絶縁抵抗を測定する方法を示したものである。   FIG. 1 shows that a first electrode 22 and a second electrode 23 are formed at both ends of the upper surface of an insulating substrate 21, and a width of about 10 μm formed between the first electrode 22 and the second electrode 23. An overvoltage protection material layer (not shown) is filled in the gap (not shown), and then the first electrode 22, the second electrode 23 and the overvoltage protection material layer (not shown) are covered with a protection film 24. The method of measuring the insulation resistance of the electrostatic countermeasure component 25 of the type covered is shown.

上記したタイプの静電気対策部品２５は、通常時は抵抗値が１×１０10Ω〜１×１０12Ωと高いため、電流は流れないが、静電気等の過電圧が印加された場合には、過電圧保護材料層（図示せず）のインピーダンスが低下するため、放電電流が流れるものである。そこで、このタイプの静電気対策部品２５の特性検査工程においては、第１の電極２２と第２の電極２３との間のギャップ（図示せず）がショートしていないかを検査する絶縁抵抗測定工程が必要不可欠になるものである。以下、静電気対策部品２５の絶縁抵抗測定方法の詳細について説明する。 The anti-static component 25 of the type described above normally has a high resistance value of 1 × 10 10 Ω to 1 × 10 12 Ω, so no current flows, but when an overvoltage such as static electricity is applied, the overvoltage Since the impedance of the protective material layer (not shown) decreases, a discharge current flows. Therefore, in the characteristic inspection process for this type of antistatic component 25, an insulation resistance measurement process for inspecting whether a gap (not shown) between the first electrode 22 and the second electrode 23 is short-circuited. Is indispensable. Hereinafter, the details of the method of measuring the insulation resistance of the anti-static component 25 will be described.

まず、図１に示すように、静電気対策部品２５における第１の電極２２側に第１のプローブ２６と第２のプローブ２７を配置するとともに、第２の電極２３側に第３のプローブ２８と第４のプローブ２９を配置する。そして第２のプローブ２７と第４のプローブ２９との間に直流電源と指示計器を備えた絶縁抵抗測定器３０を接続し、さらに第１のプローブ２６と第３のプローブ２８との間に外部抵抗３１を接続する。   First, as shown in FIG. 1, the first probe 26 and the second probe 27 are arranged on the first electrode 22 side in the antistatic component 25, and the third probe 28 is arranged on the second electrode 23 side. A fourth probe 29 is arranged. An insulation resistance measuring instrument 30 having a DC power source and an indicating instrument is connected between the second probe 27 and the fourth probe 29, and an external connection is provided between the first probe 26 and the third probe 28. A resistor 31 is connected.

ここで、上記外部抵抗３１としては、抵抗値が第２および／または第４のプローブ２７，２９がコンタクトミス（接触不良）を起こした際に絶縁抵抗測定器３０で測定される抵抗値（空気絶縁の抵抗値）の５分の１以下、より好ましくは５０分の１以下のものを用いているものである。空気絶縁の抵抗値は測定環境（温度・湿度）によって異なるが、通常１×１０11Ω〜１×１０13Ωであるため、外部抵抗３１の抵抗値はその空気絶縁の抵抗値の５０分の１から５０００分の１の値である２×１０9Ωとした。そして静電気対策部品２５の上面に４本のプローブを同時に降下させることにより、第１のプローブ２６と第２のプローブ２７を第１の電極２２に接触させ、かつ第３のプローブ２８と第４のプローブ２９を第２の電極２３に接触させて、静電気対策部品２５の絶縁抵抗を測定する。この時、図２に示すように、絶縁抵抗測定器３０に外部抵抗３１と静電気対策部品２５の被測定抵抗３２がそれぞれ並列に接続されているため、絶縁抵抗測定器３０で測定される抵抗値は外部抵抗３１と被測定抵抗３２の並列抵抗値となる。被測定抵抗３２の値は通常１×１０10Ω〜１×１０12Ωであって、外部抵抗３１の値２×１０9Ωに比べて５〜５００倍と高くなっているものである。したがって、外部抵抗３１と被測定抵抗３２の並列抵抗値は外部抵抗３１の値とほぼ等しくなるものである。 Here, the external resistance 31 is a resistance value (air) measured by the insulation resistance measuring instrument 30 when the second and / or fourth probes 27 and 29 have a contact error (contact failure). Insulating resistance value) is 1/5 or less, more preferably 1/50 or less. The resistance value of the air insulation varies depending on the measurement environment (temperature / humidity), but since it is usually 1 × 10 11 Ω to 1 × 10 13 Ω, the resistance value of the external resistor 31 is 50 minutes of the resistance value of the air insulation. It was set to 2 × 10 9 Ω which is a value from 1 to 1/5000. Then, by simultaneously lowering the four probes on the upper surface of the static electricity countermeasure component 25, the first probe 26 and the second probe 27 are brought into contact with the first electrode 22, and the third probe 28 and the fourth probe The probe 29 is brought into contact with the second electrode 23 to measure the insulation resistance of the antistatic component 25. At this time, as shown in FIG. 2, since the external resistance 31 and the measured resistance 32 of the antistatic component 25 are connected in parallel to the insulation resistance measuring device 30, the resistance value measured by the insulation resistance measuring device 30. Is a parallel resistance value of the external resistor 31 and the resistor 32 to be measured. The value of the resistance to be measured 32 is normally 1 × 10 10 Ω to 1 × 10 12 Ω, which is 5 to 500 times higher than the value 2 × 10 9 Ω of the external resistor 31. Therefore, the parallel resistance value of the external resistor 31 and the resistance to be measured 32 is substantially equal to the value of the external resistor 31.

なお、静電気対策部品２５の被測定抵抗３２の値が高くて安定している１×１０11Ω〜１×１０12Ωである場合は、外部抵抗３１の値を２×１０10Ωと高くしても、被測定抵抗３２の値が外部抵抗３１の値に比べて５〜５０倍と高いため、外部抵抗３１と被測定抵抗３２の並列抵抗値は外部抵抗３１の値とほぼ等しくなるものである。この時、空気絶縁の抵抗値は通常１×１０11Ω〜１×１０13Ωであるため、外部抵抗３１の抵抗値はその空気絶縁の抵抗値の５分の１から５００分の１の値となるものである。 In addition, when the value of the measured resistance 32 of the anti-static component 25 is 1 × 10 11 Ω to 1 × 10 12 Ω, which is high and stable, the value of the external resistor 31 is increased to 2 × 10 10 Ω. However, since the value of the measured resistance 32 is 5 to 50 times higher than the value of the external resistance 31, the parallel resistance value of the external resistance 31 and the measured resistance 32 is substantially equal to the value of the external resistance 31. is there. At this time, since the resistance value of the air insulation is usually 1 × 10 11 Ω to 1 × 10 13 Ω, the resistance value of the external resistor 31 is 1/5 to 1/500 of the resistance value of the air insulation. It will be.

ここで、従来の静電気対策部品の絶縁抵抗測定方法と本発明の一実施の形態における静電気対策部品の絶縁抵抗測定方法において測定した結果を（表１）に示す。   Here, Table 1 shows the results measured in the conventional method for measuring the insulation resistance of anti-static components and the method for measuring the insulation resistance of anti-static components in one embodiment of the present invention.

Figure 2008128758
Figure 2008128758

（表１）から明らかなように、従来の静電気対策部品の絶縁抵抗測定方法では、コンタクトチェックの段階ではプローブの接触に異常なく絶縁抵抗測定を実施した場合でも、絶縁抵抗測定段階でプローブの接触不良が発生した場合には、電極間がショートした不良品を良品と誤って判定する可能性があった。これは、被測定物である従来の静電気対策部品１３の絶縁抵抗値が１×１０10Ω〜１×１０12Ω、測定用プローブのコンタクトミス時の絶縁抵抗値が１×１０11Ω〜１×１０13Ωと両者の値がオーバーラップしていて区別するのが困難なためである。一方、本発明の一実施の形態における静電気対策部品の絶縁抵抗測定方法においては、良品の正常な測定、プローブの接触不良（コンタクトミス）による測定不良、電極間のショートによる製品不良の３つの異なる状態を、（表１）に示すように絶縁抵抗測定器３０で測定された抵抗値のみで判断することができるため、コンタクトチェック回路を必要としない簡単な設備構成により、プローブのコンタクトチェックと静電気対策部品の絶縁抵抗測定を同時に実施でき、これにより、測定時間の短縮と製造コストの低減が図れるという効果が得られるものである。ここで、外部抵抗３１は抵抗値が第２および／または第４のプローブ２７，２９のコンタクトミス時の絶縁抵抗測定値の５分の１以下、好ましくは５０分の１以下のものを用いているため、良品の正常な測定時に測定される抵抗値が外部抵抗３１の抵抗値である２×１０9Ωとほぼ等しくなり、これにより、前記した３つの異なる測定結果を明確に区別できるものである。なお、外部抵抗３１は抵抗値をあまり低くすると、湿気やほこり等によって静電気対策部品２５の過電圧保護材料層が劣化して本来の絶縁抵抗値を満足しなくなった場合を判別できなくなるため（通常静電気対策部品２５の絶縁抵抗値が０．７×１０9Ω以下になれば絶縁抵抗不良品と判断している）、外部抵抗３１の値は絶縁抵抗不良品と判断する基準の抵抗値よりも高くする必要があり、この測定では１×１０9Ω以上とするのが好ましいものである。 As can be seen from Table 1, in the conventional method for measuring the insulation resistance of anti-static components, even if the insulation resistance measurement is performed without any abnormality in the probe contact at the contact check stage, the probe contact at the insulation resistance measurement stage. When a defect occurs, there is a possibility that a defective product in which the electrodes are short-circuited is erroneously determined as a good product. This is because the insulation resistance value of the conventional antistatic component 13 which is the object to be measured is 1 × 10 10 Ω to 1 × 10 12 Ω, and the insulation resistance value when the measurement probe is in contact is 1 × 10 11 Ω to 1 This is because × 10 13 Ω and both values overlap and are difficult to distinguish. On the other hand, in the method for measuring the insulation resistance of an anti-static component in one embodiment of the present invention, there are three different methods: normal measurement of a non-defective product, measurement failure due to probe contact failure (contact mistake), and product failure due to short-circuit between electrodes. Since the state can be determined only by the resistance value measured by the insulation resistance measuring instrument 30 as shown in (Table 1), the contact check of the probe and the static electricity can be obtained with a simple equipment configuration that does not require a contact check circuit. It is possible to simultaneously measure the insulation resistance of the countermeasure parts, thereby obtaining the effect of shortening the measurement time and reducing the manufacturing cost. Here, the external resistor 31 has a resistance value of 1/5 or less, preferably 1/50 or less of the measured insulation resistance value when the second and / or fourth probes 27 and 29 are in contact. Therefore, the resistance value measured at the time of normal measurement of the non-defective product becomes almost equal to 2 × 10 9 Ω which is the resistance value of the external resistor 31, thereby clearly distinguishing the above three different measurement results. is there. If the resistance value of the external resistor 31 is too low, it becomes impossible to determine when the overvoltage protection material layer of the anti-static component 25 deteriorates due to moisture, dust, etc. and does not satisfy the original insulation resistance value (normally static electricity). If the insulation resistance value of the countermeasure component 25 is 0.7 × 10 9 Ω or less, it is determined that the insulation resistance is defective.) The value of the external resistor 31 is higher than the reference resistance value for determining that the insulation resistance is defective. In this measurement, 1 × 10 9 Ω or more is preferable.

本発明に係る静電気対策部品の絶縁抵抗測定方法は、良品を正常に測定している場合と、プローブのコンタクトミスで測定できていない場合とを絶縁抵抗測定器の抵抗値測定結果のみで判別することができ、これにより、簡単な設備構成により、プローブのコンタクトチェックと静電気対策部品の絶縁抵抗測定を同時に実施できるという効果を有するものであり、特に電子機器を静電気から保護する静電気対策部品の絶縁抵抗測定方法に適用することにより有用となるものである。   The method for measuring the insulation resistance of anti-static parts according to the present invention discriminates between a case where a non-defective product is measured normally and a case where measurement is not possible due to a probe contact error only by the resistance value measurement result of the insulation resistance measuring instrument. This makes it possible to simultaneously perform probe contact check and measurement of insulation resistance of anti-static components with a simple equipment configuration. In particular, insulation of anti-static components that protect electronic equipment from static electricity. This is useful when applied to a resistance measurement method.

本発明の一実施の形態における静電気対策部品の絶縁抵抗測定方法を示す図The figure which shows the insulation resistance measuring method of the antistatic component in one embodiment of this invention 同静電気対策部品の絶縁抵抗測定方法を示す等価回路図Equivalent circuit diagram showing the insulation resistance measurement method for the static electricity countermeasure parts （ａ）〜（ｃ）従来の静電気対策部品の仕掛かり品を示す上面図(A)-(c) Top view showing work-in-progress of conventional antistatic parts 従来の静電気対策部品のコンタクトチェック方法を示す図Diagram showing contact check method for conventional anti-static parts 従来の静電気対策部品の絶縁抵抗測定方法を示す図Diagram showing conventional methods for measuring insulation resistance of anti-static components 測定プローブと電極とのコンタクトミスの状態を示す図Diagram showing the state of contact failure between measurement probe and electrode

符号の説明Explanation of symbols

２２ 第１の電極
２３ 第２の電極
２５ 静電気対策部品
２６ 第１のプローブ
２７ 第２のプローブ
２８ 第３のプローブ
２９ 第４のプローブ
３０ 絶縁抵抗測定器
３１ 外部抵抗 22 1st electrode 23 2nd electrode 25 Static electricity countermeasure component 26 1st probe 27 2nd probe 28 3rd probe 29 4th probe 30 Insulation resistance measuring instrument 31 External resistance

Claims (1)

第１のプローブおよび第２のプローブと、第３のプローブおよび第４のプローブと、前記第２のプローブと第４のプローブとの間に接続された絶縁抵抗測定器と、前記第１のプローブと第３のプローブとの間に接続された外部抵抗とを備え、前記第１のプローブと第２のプローブを静電気対策部品の上面に形成された第１の電極に接触させ、かつ前記第３のプローブと第４のプローブを前記静電気対策部品の上面に形成された第２の電極に接触させ、さらに前記静電気対策部品と並列接続関係にある外部抵抗は抵抗値が前記第２および／または第４のプローブのコンタクトミス時の絶縁抵抗測定値の５分の１以下のものを用いて前記静電気対策部品の絶縁抵抗を測定するようにした静電気対策部品の絶縁抵抗測定方法。 A first probe and a second probe; a third probe and a fourth probe; an insulation resistance measuring instrument connected between the second probe and the fourth probe; and the first probe. And an external resistor connected between the first probe and the third probe, the first probe and the second probe are in contact with a first electrode formed on an upper surface of the antistatic component, and the third probe And the fourth probe are brought into contact with the second electrode formed on the upper surface of the antistatic component, and the resistance value of the external resistor in parallel connection with the antistatic component is the second and / or the second. 4. An insulation resistance measuring method for an anti-static component, wherein the insulation resistance of the anti-static component is measured by using one-fifth or less of the measured insulation resistance value at the time of contact failure of the probe.
JP2006312599A 2006-11-20 2006-11-20 Method for measuring insulating resistance of electrostatic countermeasure part Pending JP2008128758A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117872194A (en) * 2024-03-11 2024-04-12 西安奇点能源股份有限公司 Detection method for insulation resistance, fault battery pack and short-circuit battery pack in energy storage system based on H bridge

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11142449A (en) * 1997-11-06 1999-05-28 Murata Mfg Co Ltd Resistance measuring device for electronic part
JP2006313877A (en) * 2005-04-04 2006-11-16 Matsushita Electric Ind Co Ltd Static electricity countermeasure component

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11142449A (en) * 1997-11-06 1999-05-28 Murata Mfg Co Ltd Resistance measuring device for electronic part
JP2006313877A (en) * 2005-04-04 2006-11-16 Matsushita Electric Ind Co Ltd Static electricity countermeasure component

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117872194A (en) * 2024-03-11 2024-04-12 西安奇点能源股份有限公司 Detection method for insulation resistance, fault battery pack and short-circuit battery pack in energy storage system based on H bridge
CN117872194B (en) * 2024-03-11 2024-05-14 西安奇点能源股份有限公司 Detection method for insulation resistance, fault battery pack and short-circuit battery pack in energy storage system based on H bridge

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