TWI437372B - 微影蝕刻投影曝光設施之照射系統 - Google Patents

微影蝕刻投影曝光設施之照射系統 Download PDF

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Publication number
TWI437372B
TWI437372B TW097114959A TW97114959A TWI437372B TW I437372 B TWI437372 B TW I437372B TW 097114959 A TW097114959 A TW 097114959A TW 97114959 A TW97114959 A TW 97114959A TW I437372 B TWI437372 B TW I437372B
Authority
TW
Taiwan
Prior art keywords
wedge
illumination system
wedge plate
optical axis
plate
Prior art date
Application number
TW097114959A
Other languages
English (en)
Chinese (zh)
Other versions
TW200912550A (en
Inventor
Damian Fiolka
Original Assignee
Zeiss Carl Smt Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zeiss Carl Smt Gmbh filed Critical Zeiss Carl Smt Gmbh
Publication of TW200912550A publication Critical patent/TW200912550A/zh
Application granted granted Critical
Publication of TWI437372B publication Critical patent/TWI437372B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G03F7/70966—Birefringence
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Polarising Elements (AREA)
  • Microscoopes, Condenser (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW097114959A 2007-04-25 2008-04-24 微影蝕刻投影曝光設施之照射系統 TWI437372B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102007019831A DE102007019831B4 (de) 2007-04-25 2007-04-25 Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage

Publications (2)

Publication Number Publication Date
TW200912550A TW200912550A (en) 2009-03-16
TWI437372B true TWI437372B (zh) 2014-05-11

Family

ID=39766932

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097114959A TWI437372B (zh) 2007-04-25 2008-04-24 微影蝕刻投影曝光設施之照射系統

Country Status (5)

Country Link
US (1) US8031327B2 (enExample)
JP (1) JP5561508B2 (enExample)
DE (1) DE102007019831B4 (enExample)
NL (1) NL1035210C2 (enExample)
TW (1) TWI437372B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI666469B (zh) * 2017-06-29 2019-07-21 大陸商上海微電子裝備（集團）股份有限公司 Optical path compensation device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011080614A1 (de) 2010-09-27 2012-04-26 Carl Zeiss Smt Gmbh Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage
DE102012200368A1 (de) * 2012-01-12 2013-07-18 Carl Zeiss Smt Gmbh Polarisationsbeeinflussende optische Anordnung, insbesondere in einer mikrolithographischen Projektionsbelichtungsanlage
JP2023142214A (ja) * 2022-03-24 2023-10-05 株式会社Ｓｃｒｅｅｎホールディングス 光学装置、露光装置および露光方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19829612A1 (de) 1998-07-02 2000-01-05 Zeiss Carl Fa Beleuchtungssystem der Mikrolithographie mit Depolarisator
JP3927753B2 (ja) * 2000-03-31 2007-06-13 キヤノン株式会社 露光装置及びデバイス製造方法
JP2003090978A (ja) * 2001-09-17 2003-03-28 Canon Inc 照明装置、露光装置及びデバイス製造方法
TW200412617A (en) * 2002-12-03 2004-07-16 Nikon Corp Optical illumination device, method for adjusting optical illumination device, exposure device and exposure method
KR20060039925A (ko) * 2003-07-24 2006-05-09 가부시키가이샤 니콘 조명 광학 장치, 노광 장치 및 노광 방법
TWI569308B (zh) * 2003-10-28 2017-02-01 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造 方法
JP4470095B2 (ja) * 2003-11-20 2010-06-02 株式会社ニコン 照明光学装置、露光装置および露光方法
TWI385414B (zh) * 2003-11-20 2013-02-11 尼康股份有限公司 光學照明裝置、照明方法、曝光裝置、曝光方法以及元件製造方法
JP2005333001A (ja) 2004-05-20 2005-12-02 Nikon Corp 照明光学装置、露光装置、および露光方法
WO2006131517A2 (de) 2005-06-07 2006-12-14 Carl Zeiss Smt Ag Beleuchtungseinrichtung einer mikrolithographischen projektionsbelichtungsanlage
DE102006031807A1 (de) * 2005-07-12 2007-01-18 Carl Zeiss Smt Ag Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage, sowie Depolarisator
CN101263432B (zh) * 2005-09-14 2011-07-27 卡尔蔡司Smt有限责任公司 微光刻曝光系统的光学系统

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI666469B (zh) * 2017-06-29 2019-07-21 大陸商上海微電子裝備（集團）股份有限公司 Optical path compensation device
US11106139B2 (en) 2017-06-29 2021-08-31 Shanghai Micro Electronics Equipment (Group) Co., Ltd. Optical path compensation device

Also Published As

Publication number Publication date
NL1035210A1 (nl) 2008-10-28
JP5561508B2 (ja) 2014-07-30
NL1035210C2 (nl) 2009-01-20
US8031327B2 (en) 2011-10-04
JP2008277815A (ja) 2008-11-13
DE102007019831A1 (de) 2008-11-06
DE102007019831B4 (de) 2012-03-01
TW200912550A (en) 2009-03-16
US20080266540A1 (en) 2008-10-30

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