TWI432587B - Cu-Co-Si-Zr alloy and its manufacturing method - Google Patents

Cu-Co-Si-Zr alloy and its manufacturing method Download PDF

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TWI432587B
TWI432587B TW101100744A TW101100744A TWI432587B TW I432587 B TWI432587 B TW I432587B TW 101100744 A TW101100744 A TW 101100744A TW 101100744 A TW101100744 A TW 101100744A TW I432587 B TWI432587 B TW I432587B
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Yasuhiro Okafuji
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Jx Nippon Mining & Metals Corp
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    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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    • C22C9/00Alloys based on copper
    • C22C9/06Alloys based on copper with nickel or cobalt as the next major constituent
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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    • C22F1/08Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
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    • H01B1/02Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/026Alloys based on copper
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
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Description

Cu-Co-Si-Zr合金材及其製造方法Cu-Co-Si-Zr alloy material and manufacturing method thereof

本發明係關於一種彎曲加工性優異且可高導電化之電子電氣設備用材料,尤其是有關於一種適合作為可動連接器等電子電氣設備用材料之Cu-Co-Si-Zr銅合金材。The present invention relates to a material for electrical and electronic equipment which is excellent in bending workability and highly conductive, and particularly relates to a Cu-Co-Si-Zr copper alloy material which is suitable as a material for electrical and electronic equipment such as a movable connector.

對於電子電氣設備用材料,要求具備導電性、強度、彎曲加工性之特性,近年來,電氣電子零件、尤其是可動連接器的高電流化要求不斷提高。為不使可動連接器大型化,需要即便為0.2mm以上之厚度亦具有良好之彎曲性,且同時可確保高導電率及強度之材料。The materials for electrical and electronic equipment are required to have characteristics of electrical conductivity, strength, and bending workability. In recent years, the demand for high current of electrical and electronic parts, especially movable connectors, has been increasing. In order to increase the size of the movable connector, it is necessary to have a good bendability even at a thickness of 0.2 mm or more, and at the same time, a material having high conductivity and strength can be secured.

先前,具有可於不使導電性劣化之情況下達成高強度之特性的析出強化型銅合金,已知有Cu-Ni-Si系銅合金、Cu-Co-Si系、Cu-Co-Si-Zr系或Cu-Ni-Co-Si系銅合金。為製造該等銅合金,係以固溶處理使添加元素固溶後,藉由冷壓延、時效熱處理使作為第2相粒子之Ni2 Si或Co2 Si等析出或晶析於基體中。但是,由於Ni2 Si之固溶量相對較大,因此於Cu-Ni-Si系銅合金中難以達成60%IACS以上之導電率。因此,係對具有固溶量較低之Co2 Si作為主要析出物,且顯示高導電性的Cu-Co-Si系、Cu-Co-Si-Zr系或Cu-Ni-Co-Si系合金進行研究。該等銅合金若充分固溶後沒有使微細析出物析出,則無法達成目標強度。但是,若於高溫下固溶則會產生結晶粗大化、彎曲加工性變差等問題,因此一直在探討各種對策。In the case of a precipitation-strengthened copper alloy which can achieve high strength without deteriorating the conductivity, a Cu-Ni-Si-based copper alloy, a Cu-Co-Si system, and a Cu-Co-Si- are known. Zr-based or Cu-Ni-Co-Si-based copper alloy. In order to produce these copper alloys, the additive elements are solid-solved by solution treatment, and then Ni 2 Si, Co 2 Si, or the like as the second phase particles are precipitated or crystallized in the matrix by cold rolling and aging heat treatment. However, since the amount of solid solution of Ni 2 Si is relatively large, it is difficult to achieve a conductivity of 60% IACS or more in a Cu-Ni-Si-based copper alloy. Therefore, a Cu-Co-Si system, a Cu-Co-Si-Zr system or a Cu-Ni-Co-Si alloy having a low solid solution amount of Co 2 Si as a main precipitate and exhibiting high conductivity is used. research. When the copper alloy is sufficiently solid-solved and the fine precipitates are not precipitated, the target strength cannot be achieved. However, if it is solid-solved at a high temperature, problems such as coarsening of crystals and deterioration of bending workability occur, and various countermeasures have been examined.

於日本特開2009-242814號(專利文獻1)、日本特開2008-266787號(專利文獻2)中,為了製造引線框架等電氣電子零件材料用之析出強化型銅合金,係利用藉由第2相粒子抑制晶粒成長之效果而控制結晶粒徑,改善彎曲加工性。上述文獻中,第2相粒子係於熱加工之冷卻過程或固溶熱處理之升溫過程中析出,並且亦藉由表面研削後之時效析出熱處理而析出(專利文獻1之「0025」等)。另外,國際公報第2010/016429號(專利文獻3)中,記載有於具有特定組成之Cu-Co-Si(-Zr)合金中,藉由存在2種大小之組成不同的析出物,可抑制晶粒成長及提升強度。In order to manufacture a precipitation-strengthened copper alloy for use in an electrical and electronic component material such as a lead frame, the use of the first aspect is disclosed in Japanese Laid-Open Patent Publication No. 2009-242814 (Patent Document 1). The two-phase particle suppresses the effect of grain growth, controls the crystal grain size, and improves the bending workability. In the above-mentioned literature, the second phase particles are precipitated during the cooling process of the hot working or the heating process of the solution heat treatment, and are also precipitated by the aging precipitation heat treatment after the surface grinding ("0025" of Patent Document 1). In addition, in the Cu-Co-Si (-Zr) alloy having a specific composition, it is described in the above-mentioned Japanese Patent Publication No. 2010/016429 (Patent Document 3) that precipitates having different compositions of two sizes can be suppressed. Grain growth and strength.

[專利文獻1]日本特開2009-242814號公報[Patent Document 1] Japanese Patent Laid-Open Publication No. 2009-242814

[專利文獻2]日本特開2008-266787號公報[Patent Document 2] Japanese Patent Laid-Open Publication No. 2008-266787

[專利文獻3]國際公開第2010/016429號[Patent Document 3] International Publication No. 2010/016429

通常,用以不使上述可動連接器大型化之具體目標值為60%IACS以上之導電率、600MPa以上之0.2%保證應力YS或630MPa以上之拉伸強度TS,且不產生作為彎曲加工性指標的裂痕之極限彎曲半徑R與板厚t之比(MBR/t)為0.5以下(0.3mm厚板,Bad Way)。該彎曲加工性會因結晶粒徑以及第2相粒子之尺寸及個數等而產生變化,認為於Cu-Co-Si系或Cu-Ni-Co-Si系合金中,用以於0.3mm厚板獲得0.5以下之MBR/t之結晶粒徑通常為10μm以下。晶粒係於固溶處理中成長,結晶粒徑之尺寸由固溶處理之溫度及時間、添加元素、第2相粒子之尺寸或個數所決定。In general, a specific target value for not increasing the size of the movable connector is a conductivity of 60% IACS or more, a 0.2% of 600 MPa or more, a tensile stress YS of YS or 630 MPa or more, and no bending workability index. The ratio of the ultimate bending radius R to the plate thickness t (MBR/t) of the crack is 0.5 or less (0.3 mm thick plate, Bad Way). This bending workability changes depending on the crystal grain size and the size and number of the second phase particles, and is considered to be 0.3 mm thick in the Cu-Co-Si-based or Cu-Ni-Co-Si-based alloy. The crystal grain size of the MBR/t at which the plate is 0.5 or less is usually 10 μm or less. The crystal grains are grown in the solution treatment, and the size of the crystal grain size is determined by the temperature and time of the solution treatment, the size of the additive element, and the size or number of the second phase particles.

但是,專利文獻1、2,係以廣範圍之第2相粒子為對象,而並非必須是Co,於專利文獻1記載的藉由第2相粒子析出物而控制結晶粒徑之方法中,雖可控制結晶粒徑但導電性變差,無法達成高電流化。專利文獻2中,係著眼於具有於固溶處理中抑制再結晶粒成長之效果的直徑50~1000nm之第2相粒子,但該尺寸之Co系第2相粒子有時會因固溶而消失。因此,必須以析出物不固溶之方式調整固溶溫度或時間,且僅可獲得導電性與彎曲性之任一者較差之Cu-Co-Si-Zr合金。另外,該範圍尺寸之第2相粒子析出物亦有可能於固溶後析出,而不直接顯示控制結晶粒徑之效果。再者,於同文獻中係藉由穿透式電子顯微鏡(TEM)觀察而評價晶界上之第2相粒子密度、第2相粒子之直徑或體積密度,但是若使第2相析出直至可將結晶粒徑控制為10μm以下,則有可能因粒子重疊等而無法掌握準確之數值。However, in the methods of controlling the crystal grain size by the second phase particle precipitate described in Patent Document 1, the patent documents 1 and 2 are based on a wide range of second phase particles, and are not necessarily Co. The crystal grain size can be controlled, but the conductivity is deteriorated, and high current cannot be achieved. In Patent Document 2, the second phase particles having a diameter of 50 to 1000 nm which have an effect of suppressing the growth of recrystallized grains during the solution treatment are focused on. However, the Co-based second phase particles of this size may disappear due to solid solution. . Therefore, it is necessary to adjust the solid solution temperature or time so that the precipitate does not solidify, and only a Cu-Co-Si-Zr alloy which is inferior in either conductivity or bendability can be obtained. Further, the second phase particle precipitates of this range may precipitate after solid solution, and do not directly exhibit the effect of controlling the crystal grain size. Further, in the same literature, the density of the second phase particles on the grain boundary and the diameter or bulk density of the second phase particles are evaluated by observation through a transmission electron microscope (TEM), but the second phase is precipitated until the second phase is precipitated. When the crystal grain size is controlled to 10 μm or less, accurate numerical values may not be grasped due to overlapping of particles or the like.

又,於專利文獻3中,亦著眼於具有控制結晶粒徑成長之效果的Co系第2相粒子,但該粒子尺寸為直徑0.005~0.05μm及0.05~0.5μm,該Cu-Co-Si-Zr合金之彎曲性劣化。Further, Patent Document 3 also focuses on Co-based second phase particles having an effect of controlling the growth of crystal grain size, but the particle size is 0.005 to 0.05 μm and 0.05 to 0.5 μm in diameter, and the Cu-Co-Si- The bendability of the Zr alloy deteriorates.

如上所述,最近之析出強化型銅合金由於一直係以利用於引線框架等電子零件之薄板作為目的,因此並未對0.3mm左右之厚板的優異之彎曲加工性進行研究。As described above, the precipitation-strengthened copper alloy has been mainly used for a thin plate of an electronic component such as a lead frame. Therefore, the excellent bending workability of a thick plate of about 0.3 mm has not been studied.

本發明人為了解決上述課題經潛心研究的結果,完成下述發明。The inventors of the present invention have completed the following inventions in order to solve the above problems.

(1)一種銅合金材,其具有良好之彎曲加工性,係含有1.0~2.5wt%之Co、0.2~0.7wt%之Si、0.001~0.5wt%之Zr且Co/Si之元素比為3.5~5.0的Cu-Co-Si-Zr合金材,含有直徑為0.20μm以上且未達1.00μm之第2相粒子3,000~500,000個/mm2 ,導電率EC為60%IACS以上,結晶粒徑為10μm以下。(1) A copper alloy material which has good bending workability and contains 1.0 to 2.5% by weight of Co, 0.2 to 0.7% by weight of Si, 0.001 to 0.5% by weight of Zr and an element ratio of Co/Si of 3.5. The Cu-Co-Si-Zr alloy material of ~5.0 contains 2-3 to 500,000 pieces/mm 2 of the second phase particles having a diameter of 0.20 μm or more and less than 1.00 μm, and the conductivity EC is 60% IACS or more, and the crystal grain size is 10 μm or less.

(2)如(1)之銅合金材,其含有直徑為1.00μm以上、10.00μm以下之第2相粒子10~2,000個/mm2(2) The copper alloy material according to (1), which contains 10 to 2,000 pieces/mm 2 of the second phase particles having a diameter of 1.00 μm or more and 10.00 μm or less.

(3)如(1)或(2)之銅合金材,其0.2%保證應力YS為600MPa以上。(3) The copper alloy material of (1) or (2) has a 0.2% proof stress YS of 600 MPa or more.

(4)一種(1)或(2)之銅合金材之製造方法,其於鑄造後、固溶處理前進行之高溫加熱的溫度係較下述所選擇的固溶處理溫度高45℃以上之溫度,且自熱壓延開始時溫度至600℃之冷卻速度為100℃/分鐘以下;固溶處理溫度係於(50×Cowt%+775)℃以上、(50×Cowt%+825)℃以下之範圍內選擇。(4) A method for producing a copper alloy material according to (1) or (2), wherein the temperature at which the high temperature is heated after the casting and before the solution treatment is higher than the solution treatment temperature selected below by 45 ° C or higher. Temperature, and the cooling rate from the start of hot rolling to 600 ° C is 100 ° C / min or less; the solution treatment temperature is above (50 × Cowt% + 775) ° C, (50 × Cowt% + 825) ° C below Choose within the range.

(5)如(4)之銅合金材料之製造方法,其中,固溶處理後之時效處理係於450~650℃進行1~20小時。(5) The method for producing a copper alloy material according to (4), wherein the aging treatment after the solution treatment is carried out at 450 to 650 ° C for 1 to 20 hours.

本發明於具有特定組成之Cu-Co-Si-Zr合金材之製造中,為了避免結晶粗大化,而調整固溶處理溫度,且將固溶處理前之高溫加熱溫度亦調整成適合於固溶處理溫度,且亦調整高溫加熱後之冷卻速度,從而使特定量的具有特定粒徑之第2相粒子析出。藉由調整上述第2相粒子,可獲得10μm以下之結晶粒徑,從而可達成適合於可動連接器之彎曲加工性、及可高電流化之導電性,此外亦可達成可實際應用之強度。In the production of a Cu-Co-Si-Zr alloy material having a specific composition, the solution treatment temperature is adjusted to avoid coarsening of the crystal, and the high-temperature heating temperature before the solution treatment is also adjusted to be suitable for solid solution. The treatment temperature is also adjusted, and the cooling rate after high-temperature heating is also adjusted to precipitate a specific amount of the second phase particles having a specific particle diameter. By adjusting the second phase particles, a crystal grain size of 10 μm or less can be obtained, and the bending workability suitable for the movable connector and the conductivity which can be increased in current can be obtained, and the practical strength can be achieved.

(Cu-Co-Si-Zr合金材)(Cu-Co-Si-Zr alloy material)

本發明之合金材含有1.0~2.5wt%(以下,只要無特別說明均以%表示)、較佳為1.5~2.2%之Co,且含有0.2~0.7%、較佳為0.3~0.55%之Si。較佳為下述Zr以外的剩餘部分由Cu及不可避免之雜質構成,但是亦可於可達成本發明之構成目標效果之範圍內,進一步含有本領域技術人員通常採用作為添加於銅合金之成分的各種元素,例如Cr、Mg、Mn、Ni、Sn、Zn、P、Ag等。The alloy material of the present invention contains 1.0 to 2.5% by weight (hereinafter, unless otherwise specified, in %), preferably 1.5 to 2.2% of Co, and contains 0.2 to 0.7%, preferably 0.3 to 0.55% of Si. . It is preferable that the remainder other than the following Zr is composed of Cu and unavoidable impurities, but it may also be included in the range of effects constituting the invention of the invention, and further contains a component which is generally used as a component added to the copper alloy by those skilled in the art. Various elements such as Cr, Mg, Mn, Ni, Sn, Zn, P, Ag, and the like.

第2相粒子為Co2 Si之情形時的Co/Si之化學計量比理論上為4.2,但於本發明中為3.5~5.0,較佳為3.8~4.6,若在該範圍內,則會形成適合於析出強化及結晶粒徑調整之第2相粒子Co2 Si及Co-Si-Zr化合物。若Co及/或Si過少,則析出強化效果變小,若過多,則無法固溶且導電性亦較差。若析出第2相粒子Co2 Si,則表現出析出強化效果,且析出後基體純度變高,因此導電性提昇。進而,若存在特定量的特定尺寸之第2相粒子,則晶粒成長受到阻礙,可使結晶粒徑為10μm以下。The stoichiometric ratio of Co/Si in the case where the second phase particles are Co 2 Si is theoretically 4.2, but in the present invention, it is 3.5 to 5.0, preferably 3.8 to 4.6, and if it is within this range, it is formed. The second phase particles Co 2 Si and Co-Si-Zr compounds are suitable for precipitation strengthening and crystal grain size adjustment. When the amount of Co and/or Si is too small, the precipitation strengthening effect is small, and if it is too large, it is not solid solution and the conductivity is also poor. When the second phase particles Co 2 Si are precipitated, the precipitation strengthening effect is exhibited, and the purity of the matrix after precipitation increases, so that the conductivity is improved. Further, when a specific amount of the second phase particles having a specific size is present, the crystal grain growth is inhibited, and the crystal grain size can be made 10 μm or less.

本發明之合金材含有0.001~0.5wt%、較佳為0.01~0.4wt%之Zr,且強度及導電率增加。此效果為根據僅有Cu-Co-Si之系所預測之程度以上。若Zr未達0.001wt%,則無法得到作為目標之強度或導電率上升的效果,若Zr超過0.5wt%,則產生粗大的矽化物,造成強度或彎曲加工性下降。The alloy material of the present invention contains 0.001 to 0.5% by weight, preferably 0.01 to 0.4% by weight, of Zr, and the strength and electrical conductivity are increased. This effect is more than the extent predicted by the system of only Cu-Co-Si. When Zr is less than 0.001% by weight, the effect of increasing the strength or conductivity is not obtained. When Zr exceeds 0.5% by weight, coarse telluride is generated, and strength or bending workability is lowered.

本發明之合金材之結晶粒徑為10μm以下。若結晶粒徑為10μm以下,則可達成良好之彎曲加工性。The alloy material of the present invention has a crystal grain size of 10 μm or less. When the crystal grain size is 10 μm or less, good bending workability can be achieved.

本發明之銅合金材料例如可具有板材、條材、線材、棒材、箔等各種形狀,亦可為可動連接器用板材或條材,並無特別限定。The copper alloy material of the present invention may have various shapes such as a plate material, a strip material, a wire material, a rod material, and a foil, and may be a plate material or a strip material for a movable connector, and is not particularly limited.

(第2相粒子)(2nd phase particle)

所謂本發明之第2相粒子,係指於銅中含有其他元素時生成,且形成與銅母相(基體)不同相的粒子。直徑為50nm以上之第2相粒子的數目可藉由下述方式而獲得:對藉由機械研磨進行鏡面拋光後經電解研磨或酸洗蝕刻之銅板壓延平行剖面(平行於壓延面,且平行於厚度方向之面)任意選擇5個部位,從藉此所獲得之1視野之掃描式電子顯微鏡照片來測定該直徑範圍之粒子數目。此處所謂直徑,係如圖1所示般測定粒子之短徑(L1)與長徑(L2),指L1與L2之平均值。The second phase particles of the present invention are those which are formed when other elements are contained in copper, and which form particles different from the copper matrix (matrix). The number of second phase particles having a diameter of 50 nm or more can be obtained by calendering a parallel section of a copper plate subjected to electrolytic polishing or pickling etching after mirror polishing by mechanical polishing (parallel to the calendering surface and parallel to Five sites were selected arbitrarily in the thickness direction, and the number of particles in the diameter range was measured from the scanning electron microscope photograph of the field of view obtained thereby. Here, the diameter is determined by measuring the short diameter (L1) and the long diameter (L2) of the particles as shown in Fig. 1, and means the average value of L1 and L2.

本發明之第2相粒子大部分為Co2 Si或Co-Si-Zr化合物,但只要直徑在範圍內則亦可為Ni2 Si等其他金屬間化合物。構成第2相粒子之元素例如可使用FE-SEM(日本FEI股份有限公司,型號:XL30SFEG)附帶之EDX而確認。Most of the second phase particles of the present invention are Co 2 Si or Co-Si-Zr compounds, but other intermetallic compounds such as Ni 2 Si may be used as long as the diameter is within the range. The element constituting the second phase particles can be confirmed, for example, by using EDX attached to FE-SEM (Japan FEI Co., Ltd., model: XL30SFEG).

本發明之銅合金材中,係含有3,000~500,000個/mm2 ,較佳為10,000~200,000個/mm2 ,更佳為13,000~100,000個/mm2 的0.20μm以上且未達1.00μm之第2相粒子,該第2相粒子主要係於熱壓延後、固溶處理前析出,但亦存在藉由固溶處理而析出之情況。於固溶處理前析出之第2相粒子可於固溶處理中抑制結晶粒徑成長,但亦有產生固溶之虞。因此,較佳為調整固溶處理條件而儘可能地抑制第2相粒子之數目之變動。The copper alloy material of the present invention contains 3,000 to 500,000 pieces/mm 2 , preferably 10,000 to 200,000 pieces/mm 2 , more preferably 13,000 to 100,000 pieces/mm 2 of 0.20 μm or more and less than 1.00 μm. The two-phase particles, which are mainly precipitated after hot rolling and before solution treatment, may be precipitated by solution treatment. The second phase particles precipitated before the solution treatment can suppress the growth of the crystal grain size during the solution treatment, but there is also a tendency to cause solid solution. Therefore, it is preferable to adjust the solution treatment conditions to suppress the fluctuation of the number of the second phase particles as much as possible.

另外,所含有之直徑為1.00μm以上且10.00μm以下之第2相粒子較佳為10~2,000個/mm2 ,更佳為20~1,000個/mm2 ,最佳為30~500個/mm2 。可藉由減緩高溫加熱後之冷卻速度而使該直徑範圍的第2相粒子析出,且視需要可藉由進行第1時效處理來調整粒徑。上述直徑之第2相粒子的數目之較佳範圍亦與0.20μm以上且未達1.00μm之第2相粒子之數目連動。若為該範圍,則可高溫固溶,可抑制於固溶處理中結晶粒徑成長,且另一方面,經充分固溶之Co、Si及Zr藉由後階段之(第2)時效處理而被微細地析出,可達成高強度、高導電性、良好之彎曲加工性。但是,若超過2,000個/mm2 ,則彎曲性下降因而不佳。Further, the second phase particles having a diameter of 1.00 μm or more and 10.00 μm or less are preferably 10 to 2,000 pieces/mm 2 , more preferably 20 to 1,000 pieces/mm 2 , and most preferably 30 to 500 pieces/mm. 2 . The second phase particles in the diameter range can be precipitated by slowing down the cooling rate after the high temperature heating, and if necessary, the first aging treatment can be performed to adjust the particle diameter. The preferred range of the number of second phase particles of the above diameter is also in conjunction with the number of second phase particles of 0.20 μm or more and less than 1.00 μm. When it is this range, it can be solid-solved at a high temperature, and can suppress the growth of the crystal grain size in the solution treatment, and on the other hand, Co, Si, and Zr which are sufficiently solid-solved are treated by the (second) aging treatment in the latter stage. Finely deposited, high strength, high electrical conductivity, and good bending workability can be achieved. However, if it exceeds 2,000 pieces/mm 2 , the bendability is lowered and it is not preferable.

上述直徑為0.20μm以上且未達1.00μm以及1.00μm以上且10.00μm以下之第2相粒子之數目在固溶處理前後以及第2時效處理後亦不太產生變動,因此可利用最終壓延前或最終加工後之試片進行評價。The number of the second phase particles having a diameter of 0.20 μm or more and less than 1.00 μm and 1.00 μm or more and 10.00 μm or less is not changed before and after the solution treatment and after the second aging treatment, and thus the final calendering may be utilized or The final processed test piece was evaluated.

若存在直徑超過10.00μm之第2相粒子,則微細第2相粒子之析出受到阻礙,無法獲得析出強化效果,因此,於本發明之合金材中,直徑超過10.00μm之第2相粒子較佳為僅含有1個/mm2 以下,更佳為0.01個/mm2 以下。When the second phase particles having a diameter of more than 10.00 μm are present, the precipitation of the fine second phase particles is inhibited, and the precipitation strengthening effect cannot be obtained. Therefore, in the alloy material of the present invention, the second phase particles having a diameter of more than 10.00 μm are preferably used. It is contained in only 1 / mm 2 or less, more preferably 0.01 / mm 2 or less.

0.05μm以上且未達0.20μm之第2相粒子係於熱壓延、之後之冷卻、第1時效處理中析出,但大部分於固溶處理中固溶,且藉由之後之冷卻及(第2)時效處理而析出。未達0.05μm之第2相粒子於固溶處理中固溶,且藉由(第2)時效處理而大量析出。因此,該等第2相粒子無調整結晶粒徑之效果,但有助於提高強度。The second phase particles of 0.05 μm or more and less than 0.20 μm are precipitated by hot rolling, subsequent cooling, and first aging treatment, but most of them are solid-solved in the solution treatment, and are cooled by the following ( 2) Precipitation by aging treatment. The second phase particles of less than 0.05 μm were solid-solved in the solution treatment, and were largely precipitated by the (second) aging treatment. Therefore, these second phase particles have no effect of adjusting the crystal grain size, but contribute to the improvement of strength.

(合金材之物性)(physical properties of alloy materials)

本發明之合金材之導電率EC為60%IACS以上,較佳為65%IACS以上。若在該範圍內,則可製造可高電流化之零件。The electrical conductivity EC of the alloy material of the present invention is 60% IACS or more, preferably 65% IACS or more. If it is within this range, it is possible to manufacture a component that can be made high in current.

本發明中所謂良好之彎曲加工性,係指於0.3mm厚板其最小彎曲半徑MBR/t為0.5以下(Bad Way)。若於0.3mm厚板其MBR/t為0.5以下,則可滿足製造、使用電子零件、尤其是可動連接器時所要求的特性。再者,當本發明之合金材之厚度較0.3mm薄時,可獲得更佳之彎曲加工性。The term "good bending workability" as used in the present invention means that the minimum bending radius MBR/t of a 0.3 mm thick plate is 0.5 or less (Bad Way). If the MBR/t is 0.5 or less on a 0.3 mm thick plate, the characteristics required for manufacturing and using electronic parts, particularly movable connectors, can be satisfied. Further, when the thickness of the alloy material of the present invention is thinner than 0.3 mm, better bending workability can be obtained.

本發明之合金材之0.2%保證應力YS較佳為600MPa以上,更佳為650MPa以上,拉伸強度TS較佳為630MPa以上,更佳為660MPa以上。若在上述範圍內,則作為尤其是可動連接器用板材等電子零件用材料而言充分。The 0.2% proof stress YS of the alloy material of the present invention is preferably 600 MPa or more, more preferably 650 MPa or more, and the tensile strength TS is preferably 630 MPa or more, more preferably 660 MPa or more. In the above range, it is sufficient as a material for an electronic component such as a plate material for a movable connector.

(製造方法)(Production method)

本發明之合金材之製造方法的步驟與通常之析出強化型銅合金相同,為:熔解鑄造→(均質化熱處理)→熱壓延→冷卻→(第1時效處理)→表面研削→冷壓延→固溶處理→冷卻→(冷壓延)→第2時效處理→最終冷壓延→(調質弛力退火)。再者,括弧內之步驟可省略,最終冷壓延亦可於時效熱處理前進行。The steps of the method for producing the alloy material of the present invention are the same as those of the usual precipitation-strengthened copper alloy, namely: melt casting → (homogeneous heat treatment) → hot rolling → cooling → (first aging treatment) → surface grinding → cold rolling → Solution treatment → cooling → (cold rolling) → second aging treatment → final cold rolling → (tempering relaxation annealing). Furthermore, the steps in the brackets can be omitted, and the final cold rolling can also be performed before the aging heat treatment.

於本發明中係於鑄造後進行均質加熱處理及熱壓延,但均質加熱處理亦可為熱壓延中之加熱(再者,本案說明書中,將於均質加熱及熱壓延時進行之加熱總稱為「高溫加熱」)。In the present invention, the homogenization heat treatment and the hot calendering are carried out after casting, but the homogenization heat treatment may also be the heating in the hot calendering (further, in the present specification, the heating will be performed by homogenization heating and hot pressing delay). It is "high temperature heating").

高溫加熱之溫度為添加元素大體上固溶之溫度即可,具體而言,係較於下述中選擇之固溶處理溫度高40℃以上,較佳為高45℃以上之溫度。高溫加熱之溫度上限係由金屬組成及設備個別地規定,但通常為1,000℃以下。加熱時間亦根據板厚度而變化,較佳為30~500分鐘,更佳為60~240分鐘。高溫加熱時,較佳為Co或Si等添加元素大部分熔解。The temperature at which the high temperature is heated may be a temperature at which the additive element is substantially solid-dissolved. Specifically, it is higher than the solution treatment temperature selected below by 40 ° C or higher, preferably at a temperature higher than 45 ° C. The upper temperature limit for high-temperature heating is specified by the metal composition and equipment individually, but is usually 1,000 ° C or less. The heating time also varies depending on the thickness of the sheet, and is preferably from 30 to 500 minutes, more preferably from 60 to 240 minutes. When heating at a high temperature, it is preferred that most of the additive elements such as Co or Si are melted.

高溫加熱後之冷卻速度為100℃/min以下,較佳為5~50℃/min。若為該冷卻速度,則最後直徑為0.20μm以上、未達10.00μm的第2相粒子會在目標之範圍析出。但是,先前為了抑制第2相粒子之粗大化而藉由水冷噴淋等進行急冷,因此僅析出微細之第2相粒子。The cooling rate after high-temperature heating is 100 ° C / min or less, preferably 5 to 50 ° C / min. At this cooling rate, the second phase particles having a final diameter of 0.20 μm or more and less than 10.00 μm are precipitated in the target range. However, in the past, in order to suppress the coarsening of the second phase particles, the particles are quenched by water-cooling or the like, so that only the fine second phase particles are precipitated.

冷卻後,對材料進行表面研削,若進而任意地進行第1時效處理,則可調整目標之第2相粒子之尺寸、數目,因而較佳。該第1時效處理之條件較佳為於600~800℃進行30s~30h。After the cooling, the material is subjected to surface grinding, and if the first aging treatment is performed arbitrarily, the size and number of the second phase particles of the target can be adjusted, which is preferable. The conditions of the first aging treatment are preferably carried out at 600 to 800 ° C for 30 s to 30 h.

在上述任意之第1時效處理之後進行的固溶處理之溫度係於(50×Cowt%+775)℃以上、(50×Cowt%+825)℃以下之範圍內選擇。較佳之處理時間為30~500s,更佳為60~200s。若在該範圍內,則可殘留經調整之第2相粒子而阻止結晶粒徑增大,另一方面,微細地析出之Co、Si、Zr充分地固溶,且藉由後階段之第2時效處理,形成為微細之第2相粒子而析出。The temperature of the solution treatment performed after any of the above first aging treatments is selected within a range of (50 × Cowt% + 775) ° C or more and (50 × Cowt % + 825) ° C or less. The preferred treatment time is from 30 to 500 s, more preferably from 60 to 200 s. When it is in this range, the adjusted second phase particles may remain and the crystal grain size may be prevented from increasing. On the other hand, Co, Si, and Zr which are finely precipitated are sufficiently solid-solved, and the second stage of the latter stage The aging treatment is formed into fine second phase particles and precipitated.

固溶處理後之較佳冷卻速度為10℃/s以上。若低於該冷卻速度,則冷卻中析出第2相粒子,固溶量降低。冷卻速度並無特別之較佳上限,若為通常採用之設備,則例如即便為100℃/s左右亦可。The preferred cooling rate after solution treatment is 10 ° C / s or more. When the cooling rate is lower than this, the second phase particles are precipitated during cooling, and the amount of solid solution is lowered. There is no particularly preferable upper limit for the cooling rate, and if it is a commonly used device, for example, it may be about 100 ° C / s.

根據本發明,於Co、Si及Zr含量較低,或者熱壓延後不緩慢冷卻,且亦不進行第2時效處理加熱之情形時,在固溶處理前析出之第2相粒子較少。對析出之第2相粒子較少的合金進行固溶處理時,於超過850℃之高溫且超過1分鐘之固溶處理時間下,結晶粒徑粗大化,因此僅可進行30秒左右之短時間熱處理,實際上可固溶之量較少,因此無法獲得充分之析出強化效果。According to the present invention, when the content of Co, Si, and Zr is low, or is not slowly cooled after hot rolling, and the second aging treatment is not performed, the second phase particles precipitated before the solution treatment are less. When the alloy having a small amount of precipitated second phase particles is subjected to a solution treatment, the crystal grain size is coarsened at a solution temperature exceeding 850 ° C for more than 1 minute, so that only a short time of about 30 seconds can be performed. In the heat treatment, the amount of solid solution can be practically small, so that a sufficient precipitation strengthening effect cannot be obtained.

固溶處理後之第2時效處理之溫度較佳為450℃~650℃且進行1~20小時。若在該範圍內,則於固溶處理中殘留之第2相粒子之直徑可維持在本發明之範圍內,並且經固溶之添加元素形成為微細之第2相粒子而析出,有助於強度強化。The temperature of the second aging treatment after the solution treatment is preferably from 450 ° C to 650 ° C for 1 to 20 hours. When it is in this range, the diameter of the second phase particles remaining in the solution treatment can be maintained within the range of the present invention, and the solid solution-added element is formed into fine second phase particles and precipitates, which contributes to Strength enhancement.

最終壓延加工度較佳為5~40%,更佳為10~20%。若未達5%,則因加工硬化而得之強度提昇不充分,另一方面,若超過40%,則彎曲加工性下降。The final calendering degree is preferably from 5 to 40%, more preferably from 10 to 20%. If it is less than 5%, the strength improvement by work hardening is inadequate, and if it exceeds 40%, bending workability will fall.

另外,於第2時效熱處理前進行最終冷壓延之情形時,第2時效熱處理於450℃~600℃進行1~20小時即可。Further, in the case where the final cold rolling is performed before the second aging heat treatment, the second aging heat treatment may be carried out at 450 ° C to 600 ° C for 1 to 20 hours.

弛力退火溫度較佳為250~600℃,退火時間較佳為10s~1小時。若在該範圍內,則第2相粒子之尺寸、數目不會產生變化,且結晶粒徑亦不變化。The relaxation annealing temperature is preferably from 250 to 600 ° C, and the annealing time is preferably from 10 s to 1 hour. If it is in this range, the size and number of the second phase particles do not change, and the crystal grain size does not change.

[實施例][Examples]

(製造)(manufacturing)

於以電解銅、Si、Co、Zr作為原料之熔液中,變更添加元素之量、種類而進行添加,鑄造厚度為30mm之鑄錠。以表中之溫度對該鑄錠進行3小時(高溫)加熱,藉由熱壓延而製成厚度10mm之板。繼而,研削除去表面之氧化皮,進行15小時之時效熱處理,然後,進行溫度、時間經適宜變更之固溶處理,以表中之冷卻溫度進行冷卻,以表中之溫度進行1~15小時之時效熱處理,藉由最終之冷壓延而將最終厚度精加工為0.3mm。弛力退火時間為1分鐘。In the molten metal containing electrolytic copper, Si, Co, and Zr as raw materials, the amount and type of the additive element were changed and added, and an ingot having a thickness of 30 mm was cast. The ingot was heated at a temperature of the table for 3 hours (high temperature), and was formed into a plate having a thickness of 10 mm by hot rolling. Then, the scale of the surface is removed by grinding, and the aging heat treatment is performed for 15 hours, and then the solution treatment is carried out by appropriately changing the temperature and time, and the cooling is performed at the cooling temperature in the table, and the temperature in the table is performed for 1 to 15 hours. The aging heat treatment finishes the final thickness to 0.3 mm by final cold rolling. The relaxation annealing time is 1 minute.

(評價)(Evaluation)

使用表面研削步驟後之樣品,藉由ICP-質譜分析法分析銅合金基質中之添加元素之濃度。The concentration of the additive element in the copper alloy matrix was analyzed by ICP-mass spectrometry using the sample after the surface grinding step.

第2相粒子之直徑及個數可藉由下述方法進行測定:對最終冷壓延前之樣品壓延平行剖面進行機械研磨而拋光成鏡面後,進行電解研磨或酸洗蝕刻,使用掃描式電子顯微鏡獲得各倍率之顯微鏡照片5張,由該顯微鏡照片測定第2相粒子之直徑及個數。觀察倍率如下:(a)0.05μm以上且未達0.20μm為5×104 倍,(b)0.20μm以上且未達1.00μm為1×104 倍,(c)1.00μm以上且10.00μm以下為1×103 倍(於表中分別表示為「50-200nm」、「200-1000nm」、及「1000-10000nm」)。The diameter and the number of the second phase particles can be measured by mechanically grinding the parallel section of the sample before the final cold rolling and polishing it into a mirror surface, followed by electrolytic polishing or pickling etching using a scanning electron microscope. Five micrographs of each magnification were obtained, and the diameter and number of the second phase particles were measured from the microscope photograph. The observation magnification is as follows: (a) 0.05 μm or more and less than 0.20 μm is 5 × 10 4 times, (b) 0.20 μm or more and less than 1.00 μm is 1 × 10 4 times, (c) 1.00 μm or more and 10.00 μm or less. It is 1 × 10 3 times (in the table, it is expressed as "50-200 nm", "200-1000 nm", and "1000-10000 nm", respectively).

結晶粒徑係依據JIS H0501,藉由切斷法而測定平均結晶粒徑。The crystal grain size is determined by a cutting method in accordance with JIS H0501.

導電率EC係於保持為20℃(±0.5℃)之恆溫槽中,藉由四端子法(four-terminal method)測量比電阻(端子間距離為50mm)。The conductivity EC was measured in a thermostat kept at 20 ° C (± 0.5 ° C), and the specific resistance (the distance between the terminals was 50 mm) was measured by a four-terminal method.

關於彎曲加工性MBR/t,係以彎曲軸與壓延方向成直角的方式進行經T.D.(Transverse Direction)截取之矩形試片(寬10mm×長30mm×厚0.3mm)之90°W彎曲試驗(JIS H3130,Bad Way),將不產生裂痕之最小彎曲半徑(mm)設為MBR(Minimum Bend Radius),根據該MBR與板厚t(mm)之比MBR/t來評價彎曲加工性。Regarding the bending workability MBR/t, a 90° W bending test (JIS) of a rectangular test piece (width 10 mm × length 30 mm × thickness 0.3 mm) cut by TD (Transverse Direction) is performed at a right angle to the bending direction. H3130, Bad Way), the minimum bending radius (mm) which does not cause cracks is MBR (Minimum Bend Radius), and the bending workability is evaluated based on the ratio MBR/t of the MBR to the thickness t (mm).

關於0.2%保證應力YS及拉伸強度TS,將在壓延平行方向切割出之JIS Z2201-13B號之樣品,依據JIS Z 2241進行3次測定並求出平均值。With respect to the 0.2% proof stress YS and the tensile strength TS, a sample of JIS Z2201-13B cut in the parallel direction of rolling was measured three times in accordance with JIS Z 2241, and an average value was obtained.

將Co及Si濃度、Co/Si之元素比、直徑為0.20μm以上且未達1.00μm之第2相粒子數、導電率EC及結晶粒徑設於本發明之範圍內,將改變Zr的添加量之結果示於表1A~C。The addition of Zr is required to set the elemental ratio of Co and Si, the element ratio of Co/Si, the number of second phase particles having a diameter of 0.20 μm or more and less than 1.00 μm, the conductivity EC and the crystal grain size within the scope of the present invention. The results of the amounts are shown in Tables 1A to C.

根據表1A及B,與完全未添加Zr之比較例3相比,添加了0.01%或0.3%之Zr的實施例1或2其強度及導電率或導電率上升。並且,確認到導電率隨Zr添加量成比例地上升。然而,於添加了1.0%之Zr的比較例4中強度及彎曲加工性下降(後述表1C之說明)。According to Tables 1A and B, in Example 1 or 2 in which 0.01% or 0.3% of Zr was added, the strength, electrical conductivity, or electrical conductivity increased as compared with Comparative Example 3 in which Zr was not added at all. Further, it was confirmed that the electrical conductivity increased in proportion to the amount of Zr added. However, in Comparative Example 4 in which 1.0% of Zr was added, the strength and bending workability were lowered (described in Table 1C to be described later).

根據上述結果,將Zr量設為0.1%且改變成分組成及製造條件而得的結果示於表2A~C(後述表2C之說明)。According to the above results, the results obtained by changing the component composition and the production conditions by setting the amount of Zr to 0.1% are shown in Tables 2A to C (described in Table 2C to be described later).

實施例1~11由於滿足本發明之必要條件,因此是具備優異之導電性、強度、厚板下之彎曲加工性,且適合作為可高電流化之可動連接器的材料。Since the examples 1 to 11 satisfy the requirements of the present invention, they are excellent in electrical conductivity, strength, and bending workability under a thick plate, and are suitable as a material for a high-current movable connector.

參考例22與實施例6的條件相同,係於固溶處理後,以表中之冷卻溫度進行冷卻,於時效處理前藉由最終冷壓延將最終厚度精加工為0.3mm,以表中之溫度進行3小時之時效處理,且同樣地進行調質弛力退火所得的材料,與實施例6的物性相比雖然強度稍變差,但彎曲性提高。Reference Example 22 was the same as the conditions of Example 6, after the solution treatment, and was cooled at the cooling temperature in the table, and the final thickness was finished to 0.3 mm by final cold rolling before the aging treatment, at the temperature in the table. The aging treatment was carried out for 3 hours, and the material obtained by quenching and tempering annealing was similarly obtained, and the strength was slightly deteriorated compared with the physical properties of Example 6, but the flexibility was improved.

比較例12由於固溶溫度過高,故而直徑為0.20μm以上且未達1.00μm之第2相粒子於固溶熱處理中消失,且無法發揮抑制結晶成長之效果,結晶粒徑變大且彎曲性較差。In Comparative Example 12, since the solid solution temperature is too high, the second phase particles having a diameter of 0.20 μm or more and less than 1.00 μm disappear in the solution heat treatment, and the effect of suppressing crystal growth cannot be exhibited, and the crystal grain size becomes large and the flexibility is high. Poor.

比較例13係Co/Si比低,比較例14係Co/Si比高,均無法獲得微細第2相粒子所致的析出強化作用,且強度變低,由於Co或Si之固溶濃度提高因而導電性亦變差。In Comparative Example 13, the Co/Si ratio was low, and in Comparative Example 14, the Co/Si ratio was high, and the precipitation strengthening effect by the fine second phase particles could not be obtained, and the strength was lowered, and the solid solution concentration of Co or Si was increased. The conductivity also deteriorates.

比較例15係熱加工後之冷卻速度過度緩慢,因此直徑為1.00μm以上且未達10.00μm之第2相粒子增多,彎曲性較差。In Comparative Example 15, since the cooling rate after the hot working was excessively slow, the second phase particles having a diameter of 1.00 μm or more and less than 10.00 μm were increased, and the flexibility was inferior.

比較例16係熱加工後之冷卻速度較快,直徑為0.20μm以上且未達1.00μm之第2相粒子之個數較少,無法發揮抑制結晶成長之效果,彎曲性較差。於比較例17中,雖然為了補償熱加工後之冷卻速度較快且直徑為0.20μm以上且未達1.00μm之第2相粒子之個數較少,而於高溫下進行第1時效處理且使直徑為0.20μm以上且未達1.00μm之第2相粒子析出,但因此時之加熱而使結晶粒徑增大,因此彎曲性較差。In Comparative Example 16, the cooling rate after hot working was fast, and the number of second phase particles having a diameter of 0.20 μm or more and less than 1.00 μm was small, and the effect of suppressing crystal growth was not exhibited, and the flexibility was inferior. In Comparative Example 17, the first aging treatment was performed at a high temperature in order to compensate for the fact that the cooling rate after hot working was fast and the number of second phase particles having a diameter of 0.20 μm or more and less than 1.00 μm was small. The second phase particles having a diameter of 0.20 μm or more and less than 1.00 μm are precipitated. However, when heated, the crystal grain size is increased, so that the flexibility is poor.

比較例18與實施例8相比,因為高溫加熱溫度及固溶處理溫度較高,故無法發揮抑制結晶成長之效果,結晶粒徑變大、彎曲性較差且導電性亦低於實施例8。In Comparative Example 18, since the high-temperature heating temperature and the solution treatment temperature were higher than those in Example 8, the effect of suppressing crystal growth was not exhibited, the crystal grain size was increased, the bendability was poor, and the conductivity was also lower than that of Example 8.

比較例19與實施例11相比,固溶處理溫度較低,固溶處理中添加元素的固溶量變少,強度較低。In Comparative Example 19, the solution treatment temperature was lower than that of Example 11, and the amount of solid solution of the added element in the solution treatment was small, and the strength was low.

比較例20係Co濃度較高,固溶處理溫度較高且時間亦較長,因此直徑為0.20μm以上且未達1.00μm之第2相粒子之個數較多,彎曲性較差。In Comparative Example 20, the Co concentration was high, the solution treatment temperature was high, and the time was also long. Therefore, the number of second phase particles having a diameter of 0.20 μm or more and less than 1.00 μm was large, and the flexibility was poor.

比較例21係Co濃度較高,固溶處理溫度與熱加工溫度相同皆為高溫,因此無法發揮抑制結晶粒徑成長之效果,直徑為0.20μm以上且未達1.00μm之第2相粒子之個數較少,直徑為1.00μm以上且10.00μm以下之第2相粒子之個數較多,彎曲性較差。In Comparative Example 21, the Co concentration was high, and the solution treatment temperature and the hot working temperature were both high, so that the effect of suppressing the growth of the crystal grain size could not be exhibited, and the second phase particles having a diameter of 0.20 μm or more and less than 1.00 μm were not produced. The number of second phase particles having a diameter of 1.00 μm or more and 10.00 μm or less is large, and the flexibility is poor.

本發明中,雖然理論上並無限制,但可認為製造方法之步驟與第2相粒子之消失、析出之關係如下所述。於高溫加熱中,添加元素固溶於銅中。於熱壓延中以及熱壓延後之速度經調節之冷卻階段中,析出0.05μm以上之第2相粒子。於熱壓延後之第1時效處理中,並不析出0.05μm以上之第2相粒子,而大量析出未達0.05μm之第2相粒子。於溫度經調整之固溶處理中,未達0.20μm之第2相粒子固溶消失。於固溶處理後之速度經調節之冷卻階段中,主要係少量地析出0.05μm以上且未達0.2μm之第2相粒子。於固溶處理後之第2時效處理中,大量析出未達0.05μm之第2相粒子。In the present invention, although there is no limitation in theory, it is considered that the relationship between the steps of the production method and the disappearance and precipitation of the second phase particles is as follows. In high temperature heating, the added elements are solid-solubilized in copper. The second phase particles of 0.05 μm or more are precipitated in the cooling stage in which the temperature is adjusted during hot rolling and after hot rolling. In the first aging treatment after the hot rolling, the second phase particles of 0.05 μm or more were not precipitated, and the second phase particles of less than 0.05 μm were precipitated in a large amount. In the solution treatment in which the temperature was adjusted, the second phase particles which did not reach 0.20 μm solid solution disappeared. In the cooling stage in which the rate after the solution treatment is adjusted, mainly the second phase particles of 0.05 μm or more and less than 0.2 μm are precipitated in a small amount. In the second aging treatment after the solution treatment, a large amount of the second phase particles of less than 0.05 μm were precipitated.

於表1C及表2C中,表示測定(a)50nm以上且未達200nm、(b)200nm以上且未達1000nm、(c)1,000nm以上10,000nm以下之直徑範圍的第2相粒子在製造步驟中如何變化所得的結果。再者,於全部的測定中皆無法確認到直徑超過10,000nm(10.00μm)之第2相粒子。因為隨著直徑變大個數呈對數地減少,故改變表示位數。Table 1C and Table 2C show the measurement of (a) the second phase particles having a diameter range of 50 nm or more and less than 200 nm, (b) 200 nm or more and less than 1000 nm, and (c) 1,000 nm or more and 10,000 nm or less in the production steps. How to change the results. Further, in the entire measurement, the second phase particles having a diameter exceeding 10,000 nm (10.00 μm) could not be confirmed. Since the number is reduced logarithmically as the diameter becomes larger, the number of expressed bits is changed.

關於(a),若為本發明之固溶處理條件,則固溶而變成1/5~1/10左右之數目,於第2時效處理後數目不太產生變動。關於(b),若為本發明之固溶處理條件及第2時效處理條件,則數目幾乎不增減。關於(c),若為本發明之高溫加熱、冷卻條件,則固溶處理前、最終冷壓延前數目均完全不變化。(a), in the case of the solution treatment conditions of the present invention, the number of solid solution is about 1/5 to 1/10, and the number does not change after the second aging treatment. Regarding (b), in the case of the solution treatment conditions and the second aging treatment conditions of the present invention, the number is hardly increased or decreased. Regarding (c), in the case of the high-temperature heating and cooling conditions of the present invention, the number before the solution treatment and before the final cold rolling does not change at all.

再者,若第1時效處理溫度較高,則(b)的個數增加(比較例17),若固溶處理溫度較高,或是處理時間較長,則(b)的個數減少,且有變成未達本發明之下限值之傾向(比較例18及21)。Further, when the first aging treatment temperature is high, the number of (b) is increased (Comparative Example 17), and if the solution treatment temperature is high or the treatment time is long, the number of (b) is decreased. Further, there was a tendency that the lower limit of the present invention was not reached (Comparative Examples 18 and 21).

【產業上的可利用性】[Industrial availability]

藉由本發明之銅合金材可達成適合於可動連接器之彎曲加工性、及可高電流化之導電性,此外亦可達成可實際應用之強度According to the copper alloy material of the present invention, the bending workability suitable for the movable connector and the conductivity capable of high current can be achieved, and the practical strength can be achieved.

L1...粒子的短徑L1. . . Short diameter of particles

L2...粒子的長徑L2. . . Long diameter of particles

圖1,係說明第2相粒子之直徑之參考圖。Fig. 1 is a reference view showing the diameter of the second phase particles.

Claims (5)

一種銅合金材,其具有良好之彎曲加工性,係含有1.0~2.5wt%之Co、0.2~0.7wt%之Si、0.001~0.5wt%之Zr且Co/Si之元素比為3.5~5.0的Cu-Co-Si-Zr合金材,含有直徑為0.20μm以上且未達1.00μm之第2相粒子3,000~500,000個/mm2 ,導電率EC為60%IACS以上,結晶粒徑為10μm以下。A copper alloy material having good bending workability, comprising 1.0 to 2.5 wt% of Co, 0.2 to 0.7 wt% of Si, 0.001 to 0.5 wt% of Zr, and an element ratio of Co/Si of 3.5 to 5.0. The Cu-Co-Si-Zr alloy material contains 3,000 to 500,000 pieces/mm 2 of the second phase particles having a diameter of 0.20 μm or more and less than 1.00 μm, a conductivity EC of 60% IACS or more, and a crystal grain size of 10 μm or less. 如申請專利範圍第1項之銅合金材,其含有直徑為1.00μm以上、10.00μm以下之第2相粒子10~2,000個/mm2The copper alloy material according to the first aspect of the invention includes 10 to 2,000 particles/mm 2 of the second phase particles having a diameter of 1.00 μm or more and 10.00 μm or less. 如申請專利範圍第1或2項之銅合金材,其0.2%保證應力YS為600MPa以上。 For the copper alloy material of the first or second patent application, the 0.2% guaranteed stress YS is 600 MPa or more. 一種申請專利範圍第1或2項之銅合金材之製造方法,其於鑄造後、固溶處理前進行之高溫加熱的溫度係較下述所選擇的固溶處理溫度高45℃以上之溫度,且自熱壓延開始時溫度至600℃之冷卻速度為100℃/分鐘以下;固溶處理溫度係於(50×Cowt%+775)℃以上~(50×Cowt%+825)℃以下之範圍內選擇。 A method for producing a copper alloy material according to claim 1 or 2, wherein a temperature at which high temperature is heated after casting and before solution treatment is higher than a temperature at which a solution treatment temperature selected below is 45 ° C or higher. And the cooling rate from the start of the hot rolling to 600 ° C is 100 ° C / min or less; the solution treatment temperature is in the range of (50 × Cowt% + 775) ° C ~ ~ (50 × Cowt% + 825) ° C below Internal selection. 如申請專利範圍第4項之銅合金材之製造方法,其中,固溶處理後之時效處理係於450~650℃進行1~20小時。The method for producing a copper alloy material according to claim 4, wherein the aging treatment after the solution treatment is performed at 450 to 650 ° C for 1 to 20 hours.
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