TWI427713B - Seperation method for a chip from tape film and a chip pickup method - Google Patents

Seperation method for a chip from tape film and a chip pickup method Download PDF

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TWI427713B
TWI427713B TW97140578A TW97140578A TWI427713B TW I427713 B TWI427713 B TW I427713B TW 97140578 A TW97140578 A TW 97140578A TW 97140578 A TW97140578 A TW 97140578A TW I427713 B TWI427713 B TW I427713B
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wafer
film
squeegee
separation method
thimble device
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TW97140578A
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Chinese (zh)
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TW201017777A (en
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Li Chung Cheng
Chi Ling Tsai
Hsuan Min Lin
Huam Chung Hsieh
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Gallant Prec Machining Co Ltd
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Description

晶片與膠膜分離方法與晶片取出方法Wafer and film separation method and wafer removal method

本發明係有關於一種半導體晶片的封裝方法,特別是有關於一種封裝方法中使晶片與其膠膜分離之方法與晶片取出之方法。The present invention relates to a method of packaging a semiconductor wafer, and more particularly to a method of separating a wafer from a film thereof and a method of removing the wafer in a packaging method.

一般而言,在半導體的封裝置程中,為了製程需要,在成型的晶圓背面,貼附一具有黏著力之膠膜,一般稱之為藍膜(BLUE TAPE)。經貼附膠膜的製程後,即進行晶圓之切割。藉由前述藍膜之貼附,可使晶圓切割後之晶片(Die/晶粒)不致散失,且呈有規則之排列。隨後即可進行黏晶的程序,以黏晶或晶片取放設備將晶片由膠膜上將晶片分離取出,以利後續之製程。Generally, in the sealing process of a semiconductor, a film having an adhesive force is attached to the back surface of the formed wafer for the purpose of the process, which is generally called a BLUE TAPE. After the process of attaching the film, the wafer is cut. By attaching the blue film described above, the wafer after the wafer is diced (Die/die) can be prevented from being lost and arranged in a regular manner. Then, the process of bonding can be performed, and the wafer is separated from the wafer by a die-bonding or wafer pick-and-place device to facilitate the subsequent process.

關於將晶片與藍膜分離之晶片頂出機構的習知技術,如先前技術之中華民國專利470210、M335012、I224843與I295825等揭露,這些先前技術往往著重於晶片被頂出時之改善,以使晶片與膠膜間更有效地分離。但上述之習知技術,由於構造裝置複雜,製作不但費時,且成本亦高,時效與產能上仍難符合業界之需求。最重要的是,在封裝尺寸發展愈益輕薄短小之今日,由於堆疊晶片的封裝型式需求日益重要,60微米厚度以下的薄晶片的取晶過程便成為黏晶製程成敗的關鍵,而上述之先前技術,使用於特殊製程需要之薄晶片常常會容易使其脆裂損壞或是無法順利取起,造成生產上很大的困擾。又,有些既有的方法,例如:薄晶片多段頂出之方法雖可以將薄晶片取出,但都必需依晶片尺寸更換頂針裝置或治具等。因此對於多樣化之晶片尺寸的封裝生產實務上,則必需投入很高的成本才能滿足生產的需求,故並不實用,仍有待改善。A prior art technique for the wafer ejecting mechanism for separating a wafer from a blue film, as disclosed in the prior art of the Chinese Patent No. 470210, M335012, I224843 and I295825, etc., which prior art tends to focus on the improvement of the wafer when it is ejected, so that The wafer is more effectively separated from the film. However, the above-mentioned conventional technology, due to the complexity of the construction device, is not only time-consuming to manufacture, but also costly, and it is still difficult to meet the needs of the industry in terms of timeliness and productivity. Most importantly, as the package size grows thinner and lighter, today, due to the increasing importance of the package type of stacked wafers, the crystallization process of thin wafers below 60 microns is the key to the success of the die process. Thin wafers used for special processes are often susceptible to brittle fracture or failure to pick up smoothly, causing significant production problems. Moreover, some existing methods, for example, a thin wafer multi-stage ejection method can take out a thin wafer, but it is necessary to replace the thimble device or the jig according to the size of the wafer. Therefore, for the practice of packaging production of diverse wafer sizes, it is necessary to invest a high cost to meet the production requirements, so it is not practical and needs to be improved.

為了解決上述先前技術不盡理想之處,本發明首先提供一種晶片與膠膜分離方法,藉由一包含有刮板的頂針裝置,可使得晶圓上之晶片與其膠膜分離,包含以下步驟:(1)施以一定位程序將晶片定位於頂針裝置上方之第一位置;(2)沿第一方向以一適當距離水平移動上述之晶片,使得晶片位於第二位置,且頂針裝置之刮板位於鄰近上述之晶片之邊緣部份;(3)開啟一真空,以吸附上述之晶片連同膠膜向下;(4)將頂針裝置之刮板從第一刮板位置向上移動至第二刮板位置,使得刮板頂住膠膜,以及(5)將晶片連同膠膜沿第二方向水平移動一個晶片長度的距離,其中第二方向係相反於第一方向,即可使上述之晶片與其膠膜分離。In order to solve the above-mentioned prior art unsatisfactory, the present invention firstly provides a method for separating a wafer and a film. The thimble device including the squeegee can separate the wafer on the wafer from the film, and the following steps are included: (1) applying a positioning procedure to position the wafer at a first position above the ejector device; (2) horizontally moving the wafer at an appropriate distance along the first direction such that the wafer is in the second position and the ejector device is scraped Located adjacent to the edge portion of the wafer; (3) opening a vacuum to adsorb the wafer and the film downward; (4) moving the squeegee of the thimble device from the first squeegee position to the second squeegee Positioning the blade against the film, and (5) moving the wafer horizontally along the film in a second direction by a distance of one wafer length, wherein the second direction is opposite to the first direction, thereby enabling the wafer to be glued to the wafer Membrane separation.

因此,本發明之主要目的係提供一種晶片與膠膜分離方法,不會在晶片與膠膜分離過程中造成晶片裂損,可用於一般晶片或薄晶片。Accordingly, it is a primary object of the present invention to provide a wafer and film separation method which does not cause wafer cracking during wafer and film separation, and can be used for a general wafer or a thin wafer.

本發明之次要目的係提供一種晶片與膠膜分離方法,藉由頂針裝置之適當尺寸的刮板,則不需更換整個頂針裝置即可適用於不同尺寸之晶片,可降低所使用的頂針裝置的成本。A secondary object of the present invention is to provide a wafer and film separation method. By appropriately squeegee of the ejector device, the wafer can be applied to different sizes without replacing the entire thimble device, and the thimble device used can be reduced. the cost of.

本發明之另一目的係提供一種晶片與膠膜分離方法,藉由頂針裝置之適當尺寸的刮板,即可不限晶片尺寸使用,進而方便製程使用,因不需更換治具,故可節省大量更換治具的成本。Another object of the present invention is to provide a method for separating a wafer and a film. By using a squeegee of an appropriate size of the ejector device, the wafer size can be used without limitation, thereby facilitating the process, and the tool can be saved without replacing the fixture. The cost of replacing the fixture.

本發明進一步提供另一種晶片取出方法,藉由一包含有刮板的頂針裝置先使晶片與其膠膜分離,之後再將底部膠膜已分離之晶片取出。包含下列步驟:(1)施以一定位程序將晶片定位於頂針裝置上方之第一位置;(2)沿第一方向以一適當距離水平移動上述之晶片,使得晶片位於第二位置,且頂針裝置之刮板位於鄰近上述之晶片之邊緣部份;(3)開啟一真空,以吸附上述之晶片連同膠膜向下;(4)將頂針裝置之刮板從第一刮板位置向上移動至第二刮板位置,使得 刮板頂住膠膜;(5)將晶片連同膠膜沿第二方向水平移動一個晶片長度的距離,其中第二方向係相反於第一方向,即可使上述之晶片與其膠膜分離;(6)關閉上述之真空,且將刮板向下移動至第一刮板位置;(7)沿第一方向以一適當距離水平移動上述之晶片;(8)施以二次定位程序,將上述之晶片定位於頂針裝置上方之第一位置;(9)開啟真空,以吸附膠膜向下;以及(10)將底部膠膜已分離之晶片取出。The present invention further provides another wafer removing method for separating a wafer from a film thereof by a thimble device including a squeegee, and then removing the wafer from which the bottom film has been separated. The method comprises the following steps: (1) applying a positioning program to position the wafer at a first position above the ejector device; (2) horizontally moving the wafer at an appropriate distance along the first direction, so that the wafer is in the second position, and the thimble The squeegee of the device is located adjacent to an edge portion of the wafer; (3) a vacuum is opened to adsorb the wafer and the film downward; (4) the squeegee of the thimble device is moved upward from the first squeegee position to Second squeegee position, making The squeegee is pressed against the film; (5) the wafer and the film are horizontally moved by a distance of one wafer length in the second direction, wherein the second direction is opposite to the first direction, so that the wafer is separated from the film; 6) closing the vacuum and moving the squeegee downward to the first squeegee position; (7) horizontally moving the wafer at an appropriate distance in the first direction; (8) applying a secondary positioning procedure, The wafer is positioned at a first position above the thimble device; (9) a vacuum is opened to attract the film downward; and (10) the wafer with the bottom film separated is removed.

因此,本發明之又一目的係提供一種晶片取出方法,不會在晶片與膠膜分離過程中造成晶片裂損,可用於一般晶片或薄晶片。Accordingly, it is still another object of the present invention to provide a wafer removal method which does not cause wafer cracking during wafer and film separation, and which can be used for a general wafer or a thin wafer.

本發明之再一目的係提供一種晶片取出方法,藉由頂針裝置之適當尺寸的刮板及刮板二側之頂針,改變其佈針位置,則不需更換整個頂針裝置即可適用於不同尺寸之晶片,可降低所使用的頂針裝置的成本。A further object of the present invention is to provide a wafer removing method, which can change the position of the needle by the squeegee of the appropriate size of the ejector device and the thimble on both sides of the squeegee, and can be applied to different sizes without replacing the entire thimble device. The wafer can reduce the cost of the thimble device used.

本發明之再一目的係提供一種晶片取出方法,藉由頂針裝置之適當尺寸的刮板,即可不限晶片尺寸使用,進而方便製程使用,因不需更換治具,故可節省大量更換治具的成本。A further object of the present invention is to provide a wafer removing method, which can be used without any wafer size by using a squeegee of an appropriate size of the ejector device, thereby facilitating the process, and saving a large number of replacement fixtures without replacing the fixture. the cost of.

本發明進一步提供又一種晶片與膠膜分離方法,藉由一包含有刮板的頂針裝置,可使得晶圓上之晶片與其膠膜分離,包含以下步驟:(1)施以一定位程序將晶片定位於頂針裝置之刮板上方之預定位置,使得頂針裝置之刮板位於鄰近上述之晶片之邊緣部份;(2)開啟一真空,以吸附上述之晶片連同膠膜向下;(3)將頂針裝置之刮板從第一刮板位置向上移動至第二刮板位置,使得刮板頂住膠膜;(4)將晶片連同膠膜沿第一方向水平移動大約一個晶片長度的距離,即可使上述之晶片與其膠膜分離;以及 (5)關閉真空,將刮板向下移動至第一刮板位置。The present invention further provides a method for separating a wafer and a film. The wafer on the wafer is separated from the film by a thimble device including a squeegee, and the method comprises the following steps: (1) applying a positioning program to the wafer Positioned at a predetermined position above the squeegee of the thimble device such that the squeegee of the thimble device is located adjacent to the edge portion of the wafer; (2) opening a vacuum to adsorb the wafer with the film downward; (3) The squeegee of the thimble device moves upward from the first squeegee position to the second squeegee position such that the squeegee is held against the film; (4) the wafer is moved horizontally along the first direction by a distance of about one wafer length, ie Separating the above wafer from its film; and (5) Turn off the vacuum and move the squeegee down to the first squeegee position.

因此,本發明之再一目的係提供一種晶片與膠膜分離方法,不會在晶片與膠膜分離過程中造成晶片裂損,可用於一般晶片或薄晶片。Accordingly, it is still another object of the present invention to provide a wafer and film separation method which does not cause wafer cracking during wafer and film separation, and can be used for a general wafer or a thin wafer.

本發明之再一目的係提供一種晶片與膠膜分離方法,藉由頂針裝置之適當尺寸的刮板,則不需更換整個頂針裝置即可適用於不同尺寸之晶片,可降低所使用的頂針裝置的成本。A further object of the present invention is to provide a method for separating a wafer from a film. By appropriately squeegee of the ejector device, the wafer can be applied to different sizes without replacing the entire thimble device, and the thimble device used can be reduced. the cost of.

本發明之再一目的係提供一種晶片與膠膜分離方法,藉由頂針裝置之適當尺寸的刮板,即可不限晶片尺寸使用,進而方便製程使用,因不需更換治具,故可節省大量更換治具的成本。A further object of the present invention is to provide a method for separating a wafer and a film. By using a squeegee of an appropriate size of the ejector device, the wafer size can be used without any chip size, thereby facilitating the process, and the tool can be saved without replacing the fixture. The cost of replacing the fixture.

由於本發明係揭露一種晶片分離方法與晶片取出方法,其中所利用之半導體頂針裝置之基本結構與機構原理,已為相關技術領域具有通常知識者所能明瞭,故以下文中之說明,不再作完整描述。同時,以下文中所對照之圖式,係表達與本發明特徵有關之結構示意,並未亦不需要依據實際尺寸完整繪製,盍先敘明。Since the present invention discloses a wafer separation method and a wafer removal method, the basic structure and mechanism principle of the semiconductor ejector device used therein have been known to those skilled in the relevant art, and therefore, the following description will not be made. Full description. At the same time, the drawings referred to in the following texts express the structural schematics related to the features of the present invention, and need not be completely drawn according to the actual size, which is first described.

本發明提出之第一較佳實施例,為一種晶片與膠膜分離方法,供半導體黏晶製程時使用,主要包含有以下步驟:(1)請參考第1A與第1B圖,提供一頂針裝置1,頂針裝置1具有一刮板11,刮板11位於第一刮板位置51,而刮板11為一種板片狀結構,或者亦可為由複數個針體排列而形成。此外頂針裝置1進一步可包含複數個頂針12,且複數個頂針12分佈在刮板11之兩側。要特別留意的是,刮板11的寬度w0 應小於晶片91的寬度w1 ,而較佳的刮板11寬度w0 為欲被分離之晶片91寬度w1 的85%至98%之間;(2)請參考第1B圖,提供至少一晶片91,晶片91底部黏著有膠膜92,其中晶片91的長度為L,在此較佳實施例中所述之晶片91為欲被與膠膜分 離之晶片91;(3)請繼續參考第1B圖,首先將晶片91施以一定位程序,例如可經由一CCD(CHARGE-COUPLED DEVIC/電荷耦合元件)影像感測器協助之,當然,或是功能相近的影像感測器亦可,只要能將晶片91定位於頂針裝置1上方之第一位置21即可;(4)請參考第1C圖,沿第一方向31以一適當距離水平移動晶片91,使得晶片91位於第二位置22,且頂針裝置1之刮板11位於鄰近晶片91之邊緣部份,上述之適當距離係為晶片91的二分之一長度,當然其他的長度亦可,只要使刮板11位於鄰近晶片91之邊緣部份即可;(5)請參考第1D圖,接著開啟頂針裝置1之真空4,使得晶片91連同其膠膜92為朝向真空4之方向被往下吸附;(6)請繼續參考第1D圖,接著將頂針裝置1之刮板11從第一刮板位置51向上移動至第二刮板位置52,使刮板11頂住膠膜92,此時,第二刮板位置52之較佳位置為刮板11頂住膠膜92,且略凸出頂針裝置1的上表面;以及(7)請參考第1E圖,此時在使晶片91沿第二方向32水平移動一個晶片91長度的距離,第二方向32係相反於第一方向31,然,同時間刮板11仍是頂住膠膜92,故可利用真空4對膠膜92的吸引力,藉以有如逐步撕開膠膜92般地破壞晶片91與其膠膜92的膠合狀態,使得晶片91與其膠膜92分離。The first preferred embodiment of the present invention is a wafer and film separation method for use in a semiconductor die bonding process, which mainly comprises the following steps: (1) Please refer to FIGS. 1A and 1B to provide a thimble device. 1. The ejector device 1 has a squeegee 11 which is located at the first squeegee position 51, and the squeegee 11 is a plate-like structure or may be formed by arranging a plurality of needle bodies. In addition, the thimble device 1 may further include a plurality of thimbles 12, and a plurality of thimbles 12 are distributed on both sides of the squeegee 11. It is to be particularly noted that the width w 0 of the squeegee 11 should be less than the width w 1 of the wafer 91, and the preferred width w 0 of the squeegee 11 is between 85% and 98% of the width w 1 of the wafer 91 to be separated. (2) Referring to FIG. 1B, at least one wafer 91 is provided, and a film 92 is adhered to the bottom of the wafer 91, wherein the length of the wafer 91 is L. In the preferred embodiment, the wafer 91 is intended to be glued. Membrane-separated wafer 91; (3) Please continue to refer to FIG. 1B, firstly applying a positioning procedure to the wafer 91, for example, via a CCD (CHARGE-COUPLED DEVIC/Charge Coupled Device) image sensor, of course, Alternatively, the image sensor of similar function may be located as long as the wafer 91 can be positioned at the first position 21 above the thimble device 1; (4) refer to the 1C figure, at an appropriate distance level along the first direction 31. The wafer 91 is moved such that the wafer 91 is at the second position 22, and the squeegee 11 of the thimble device 1 is located at an edge portion of the adjacent wafer 91. The appropriate distance is one-half of the length of the wafer 91, and of course other lengths are also Yes, as long as the squeegee 11 is located adjacent to the edge portion of the wafer 91; (5) please refer to the 1D figure, The vacuum 4 of the thimble device 1 is opened, so that the wafer 91 and its film 92 are sucked downward in the direction toward the vacuum 4; (6) Please continue to refer to FIG. 1D, and then the squeegee 11 of the thimble device 1 is first The squeegee position 51 is moved upward to the second squeegee position 52, so that the squeegee 11 is pressed against the adhesive film 92. At this time, the preferred position of the second squeegee position 52 is that the squeegee 11 is against the adhesive film 92 and is slightly convex. The upper surface of the ejector device 1; and (7) please refer to FIG. 1E. At this time, the wafer 91 is horizontally moved by a distance of one wafer 91 in the second direction 32, and the second direction 32 is opposite to the first direction 31. However, at the same time, the squeegee 11 is still against the adhesive film 92, so that the attraction force of the vacuum film 4 to the adhesive film 92 can be utilized, so that the splicing state of the wafer 91 and the adhesive film 92 is destroyed as if the adhesive film 92 is gradually peeled off. The wafer 91 is separated from its film 92.

上述實施例中,當晶片91與膠膜92分離後,進一步亦可將晶片91移動回先前定位之第一位置21。請繼續參考第1F圖,可先將真空4關閉,然後將刮板11向下移動回第一刮板位置51,接著沿第一方向31以一適當距離水平移動晶片91,接著進行第二次定位程序,藉此即可將已分離之晶片91定位回頂針裝置1上方先前定位之第一位置21,同樣地,在此較佳實施例中,上述之適當距離係為晶片91的二分之一長度。In the above embodiment, after the wafer 91 is separated from the film 92, the wafer 91 can be further moved back to the previously positioned first position 21. Referring to FIG. 1F, the vacuum 4 can be closed first, then the squeegee 11 is moved back down to the first squeegee position 51, and then the wafer 91 is horizontally moved at an appropriate distance in the first direction 31, followed by a second time. A positioning procedure whereby the separated wafer 91 can be positioned back to the previously positioned first position 21 above the thimble device 1, and, in the preferred embodiment, the appropriate distance is two-thirds of the wafer 91. One length.

使用本發明之晶片分離方法,不論是使用較具有黏性之UV膠帶(UV TAPE),或是因成本考量使用較便宜之藍膜皆可容易地使晶片91與膠膜92分離。此外,上述之晶片91主要為特殊製程所需之薄晶片,其厚度小於60微米,當然,一般晶片91亦可以使用。更重要的是本發明之方法,不會在晶片91與膠膜92分離過程中造成晶片91裂損,只需藉由頂針裝置11之適當尺寸的刮板11,即可不限晶片91尺寸使用,進而方便製程使用,因不需更換治具,故可節省大量更換治具的成本。The wafer 91 can be easily separated from the film 92 by using the wafer separation method of the present invention, whether it is using a more viscous UV tape (UV TAPE) or a cheaper blue film. In addition, the above-mentioned wafer 91 is mainly a thin wafer required for a special process, and its thickness is less than 60 micrometers. Of course, the general wafer 91 can also be used. More importantly, the method of the present invention does not cause the wafer 91 to be cracked during the separation process of the wafer 91 and the film 92, and the wafer 11 size can be used only by the appropriate size of the squeegee 11 of the ejector device 11. In addition, the process is convenient to use, and the cost of replacing the jig can be saved because the jig is not required to be replaced.

本發明進一步提供第二較佳實施例,為一種晶片取出方法,供半導體黏晶製程時使用,主要包含有:(1)請參考第1A圖與第1B圖,提供一頂針裝置1,頂針裝置1具有一刮板11,刮板11位於第一刮板位置51,而刮板11為一種板片狀結構,或者亦可為由複數個針體排列而形成。此外頂針裝置1進一步包含複數個頂針12,且複數個頂針12分佈在刮板11之兩側。要特別留意的是,刮板11的寬度w0 應小於晶片91的寬度w1 ,而較佳的刮板11寬度w0 為欲被分離之晶片91寬度w1 的85%至98%之間;(2)請參考第1B圖,提供至少一晶片91,晶片91底部黏著有膠膜92,其中晶片91的長度為L,在此較佳實施例中所述之晶片91為欲被與膠膜分離之晶片91;(3)請繼續參考第1B圖,首先將晶片91施以一定位程序,例如可經由一CCD影像感測器協助之,當然,或是功能相近的影像感測器亦可,只要能將晶片91定位於頂針裝置1上方之第一位置21即可;(4)請參考第1C圖,沿第一方向31以一適當距離水平移動晶片91,使得晶片91位於第二位置22,且頂針裝置1之刮板11位於鄰近晶片91之邊緣部份,上述之適當距離係為晶片91的二分之一長度,當然其他的長度亦可,只要使刮板11位於鄰近晶片91之邊緣部份即可; (5)請參考第1D圖,接著開啟頂針裝置1之真空4,使得晶片91連同其膠膜92為朝向真空4之方向被往下吸附;(6)請繼續參考第1D圖,接著將頂針裝置1之刮板11從第一刮板位置51向上移動至第二刮板位置52,使刮板11頂住膠膜92,此時,第二刮板位置52之較佳位置為刮板11頂住膠膜92,且略凸出頂針裝置1的上表面;(7)請參考第1E圖,此時在使晶片91沿第二方向32水平移動一個晶片91長度的距離,第二方向32係相反於第一方向31,然,同時間刮板11仍是頂住膠膜92,故可利用真空4對膠膜92的吸引力,藉以有如逐步撕開膠膜92般地破壞晶片91與其膠膜92的膠合狀態,使得晶片91與其膠膜92分離,而此時晶片91仍躺置於膠膜92之上;(8)請參考第1E與1F圖,接著再關閉頂針裝置1之真空4,並且使刮板11從原來的第二刮板位置52向下移動至第一刮板位置51;(9)請繼續參考第1F圖,接著再將晶片91往回沿第一方向31以一適當距離水平移動,同樣地,在此較佳實施例中,上述之適當距離係為晶片91的二分之一長度;(10)請繼續參考第1F圖,接著再進行第二次定位程序,藉此即可將晶片91定位回頂針裝置1上方先前定位之第一位置21;(11)請參考第2A圖,接著再開啟真空4,用以吸附住膠膜92向下;以及(12)請繼續參考第2A圖,因為真空已吸住膠膜92,故接著可以利用任一種取放機6,例如:晶片取出裝置,將晶片91取出。The present invention further provides a second preferred embodiment, which is a wafer removal method for use in a semiconductor die bonding process, and mainly includes: (1) Please refer to FIGS. 1A and 1B to provide a thimble device 1 and a thimble device. 1 has a squeegee 11 which is located at the first squeegee position 51, and the squeegee 11 is a plate-like structure or may be formed by arranging a plurality of needle bodies. In addition, the thimble device 1 further includes a plurality of thimbles 12, and a plurality of thimbles 12 are distributed on both sides of the squeegee 11. It is to be particularly noted that the width w 0 of the squeegee 11 should be less than the width w 1 of the wafer 91, and the preferred width w 0 of the squeegee 11 is between 85% and 98% of the width w 1 of the wafer 91 to be separated. (2) Referring to FIG. 1B, at least one wafer 91 is provided, and a film 92 is adhered to the bottom of the wafer 91, wherein the length of the wafer 91 is L. In the preferred embodiment, the wafer 91 is intended to be glued. Membrane-separated wafer 91; (3) Please continue to refer to FIG. 1B. First, the wafer 91 is subjected to a positioning procedure, for example, assisted by a CCD image sensor, or, of course, a similar image sensor. Yes, as long as the wafer 91 can be positioned at the first position 21 above the ejector device 1; (4) Referring to FIG. 1C, the wafer 91 is horizontally moved at an appropriate distance along the first direction 31, so that the wafer 91 is located at the second position. Position 22, and the squeegee 11 of the thimble device 1 is located at an edge portion of the adjacent wafer 91, and the appropriate distance is one-half of the length of the wafer 91. Of course, other lengths may be used as long as the squeegee 11 is located adjacent to the wafer. The edge of 91 can be used; (5) Please refer to Figure 1D, and then open the vacuum 4 of the thimble device 1, so that The wafer 91 along with its film 92 is sucked downward in the direction toward the vacuum 4; (6) Please continue to refer to FIG. 1D, and then the squeegee 11 of the thimble device 1 is moved upward from the first squeegee position 51 to the second squeegee The plate position 52 causes the squeegee 11 to bear against the film 92. At this time, the preferred position of the second squeegee position 52 is that the squeegee 11 is against the film 92 and slightly protrudes from the upper surface of the thimble device 1; Referring to FIG. 1E, at this time, the wafer 91 is horizontally moved by a distance of one wafer 91 in the second direction 32, and the second direction 32 is opposite to the first direction 31. However, while the squeegee 11 is still resisting The adhesive film 92 can utilize the attraction force of the vacuum 4 to the adhesive film 92, so that the bonding state of the wafer 91 and the adhesive film 92 is destroyed as if the adhesive film 92 is gradually peeled off, so that the wafer 91 is separated from the adhesive film 92 thereof. The wafer 91 is still lying on the film 92; (8) please refer to FIGS. 1E and 1F, then the vacuum 4 of the thimble device 1 is closed, and the squeegee 11 is moved downward from the original second squeegee position 52. Go to the first squeegee position 51; (9) continue to refer to the 1F, and then move the wafer 91 back horizontally in the first direction 31 at an appropriate distance. For example, in the preferred embodiment, the appropriate distance is one-half of the length of the wafer 91; (10) please continue to refer to the first F-figure, and then perform the second positioning procedure, thereby The wafer 91 is positioned back to the first position 21 previously positioned above the thimble device 1; (11) please refer to FIG. 2A, and then the vacuum 4 is opened to hold the film 92 downward; and (12) please continue to refer to the 2A In the figure, since the vacuum has absorbed the film 92, the wafer 91 can be taken out by any of the pick-and-place machines 6, for example, a wafer take-up device.

進一步,請繼續參考第2B圖,為了要適應大小不同的晶片91,若是較小的晶片91,進一步可利用複數個在刮板11兩側的頂針12向上頂出,以達到更佳的晶片91取出效果。故接續先前之步驟,然後至施以第二次定位程序後,開啟真空4,以吸附膠膜92向下,接著使複數個頂針12向上頂出,此時複數個頂針12會將晶片91頂起,故可更輕易地將已與底部膠膜 92分離之晶片91取出。Further, please refer to FIG. 2B. In order to accommodate the different sizes of the wafer 91, if it is a smaller wafer 91, a plurality of ejector pins 12 on both sides of the squeegee 11 can be further ejected upward to achieve a better wafer 91. Take out the effect. Therefore, the previous steps are continued, and then after the second positioning procedure is applied, the vacuum 4 is turned on to adsorb the film 92 downward, and then the plurality of thimbles 12 are pushed up, at which time the plurality of thimbles 12 will top the wafer 91. Up, so it is easier to apply the film with the bottom The 92 separated wafers 91 are taken out.

使用本發明之晶片分離方法,不論是使用較具有黏性之UV膠帶,或是因成本考量使用較便宜之藍膜皆可容易地使晶片91與膠膜92分離。此外,上述之晶片91主要為特殊製程所需之薄晶片,其厚度小於60微米,當然,一般晶片91亦可以使用。更重要的是本發明之方法,不會在晶片91與膠膜92分離過程中造成晶片91裂損,只需藉由頂針裝置11之適當尺寸的刮板11,即可不限晶片91尺寸使用,進而方便製程使用,因不需更換治具,故可節省大量更換治具的成本。With the wafer separation method of the present invention, the wafer 91 can be easily separated from the film 92 regardless of whether a more viscous UV tape is used or a less expensive blue film is used for cost considerations. In addition, the above-mentioned wafer 91 is mainly a thin wafer required for a special process, and its thickness is less than 60 micrometers. Of course, the general wafer 91 can also be used. More importantly, the method of the present invention does not cause the wafer 91 to be cracked during the separation process of the wafer 91 and the film 92, and the wafer 11 size can be used only by the appropriate size of the squeegee 11 of the ejector device 11. In addition, the process is convenient to use, and the cost of replacing the jig can be saved because the jig is not required to be replaced.

本發明進一步提供第三較佳實施例,為另一種晶片與膠膜分離方法,供半導體黏晶製程時使用,主要包含有:(1)請參考第3A圖,提供一頂針裝置1,頂針裝置1具有一刮板11,刮板11位於第一刮板位置51,而刮板11為一種板片狀結構,或者亦可為由複數個針體排列而形成。此外頂針裝置1進一步可包含複數個頂針12,且複數個頂針12分佈在刮板11之兩側;(2)請繼續參考第3A圖,提供至少一晶片91,晶片91底部黏著有膠膜92,其中晶片91的長度為L,在此較佳實施例中所述之晶片91為欲被與膠膜分離之晶片91。此外,如第一較佳實施例所述,刮板11的寬度w0 應小於晶片91的寬度w1 ,而較佳的刮板11寬度為欲被與膠膜分離晶片91寬度的85%至98%之間;(3)請繼續參考第3A圖,首先將晶片91施以一定位程序,例如可經由一CCD影像感測器協助之,當然,或是功能相近的影像感測器亦可,只要能將晶片91定位於頂針裝置1上方之預定位置71即可,且使得頂針裝置1之刮板11位於鄰近晶片91之邊緣部份;(4)請參考第3B圖,接著開啟頂針裝置1之真空4,使得晶片91連同其膠膜92為朝向真空4之方向被往下吸附; (5)請繼續參考第3B圖,接著將頂針裝置1之刮板11從第一刮板位置51向上移動至第二刮板位置52,使刮板11頂住膠膜92,此時,第二刮板位置52之較佳位置為刮板11頂住膠膜92,且略凸出頂針裝置1的上表面;(6)請參考第3C圖,此時在使晶片91沿第二方向32水平移動一個晶片91長度的距離,第二方向32係相反於第一方向31,然,同時間刮板11仍是頂住膠膜92,故可利用真空4對膠膜92的吸引力,藉以有如逐步撕開膠膜92般地破壞晶片91與其膠膜92的膠合狀態,使得晶片91與其膠膜92分離,而此時晶片91仍躺置於膠膜92之上;以及(7)請繼續參考第3C與3D圖,接著關閉頂針裝置1之真空4,並且使刮板11從原來的第二刮板位置52向下移動至第一刮板位置51。The present invention further provides a third preferred embodiment, which is another method for separating a wafer and a film for use in a semiconductor die bonding process, and mainly includes: (1) Please refer to FIG. 3A to provide a thimble device 1 and a thimble device. 1 has a squeegee 11 which is located at the first squeegee position 51, and the squeegee 11 is a plate-like structure or may be formed by arranging a plurality of needle bodies. In addition, the thimble device 1 may further include a plurality of thimbles 12, and a plurality of thimbles 12 are distributed on both sides of the squeegee 11; (2) Please continue to refer to FIG. 3A to provide at least one wafer 91 with a film 92 adhered to the bottom of the wafer 91. The wafer 91 has a length L, and the wafer 91 described in the preferred embodiment is a wafer 91 to be separated from the film. Further, as described in the first preferred embodiment, the width w 0 of the squeegee 11 should be smaller than the width w 1 of the wafer 91, and the width of the squeegee 11 is preferably 85% of the width of the wafer 91 to be separated from the film. Between 98%; (3) Please continue to refer to Figure 3A. First, the wafer 91 is subjected to a positioning procedure, for example, assisted by a CCD image sensor. Of course, or similar image sensors can also be used. As long as the wafer 91 can be positioned at a predetermined position 71 above the ejector device 1, and the squeegee 11 of the thimble device 1 is located at an edge portion of the adjacent wafer 91; (4) refer to FIG. 3B, and then the ejector device is turned on. The vacuum 4 of 1 causes the wafer 91 to be adsorbed downward along with its film 92 in the direction toward the vacuum 4; (5) Please continue to refer to FIG. 3B, and then the squeegee 11 of the thimble device 1 is removed from the first squeegee position 51. Moving upward to the second squeegee position 52, the squeegee 11 is pressed against the adhesive film 92. At this time, the preferred position of the second squeegee position 52 is that the squeegee 11 is pressed against the adhesive film 92, and the thimble device 1 is slightly protruded. (6) Please refer to FIG. 3C, in which case the wafer 91 is horizontally moved by a distance of one wafer 91 in the second direction 32, The second direction 32 is opposite to the first direction 31. However, while the squeegee 11 is still against the adhesive film 92, the attraction force of the vacuum film 4 to the adhesive film 92 can be utilized, so that the adhesive film 92 is gradually peeled off. Destroying the bonding state of the wafer 91 and its film 92, so that the wafer 91 is separated from its film 92, while the wafer 91 is still lying on the film 92; and (7) please continue to refer to the 3C and 3D figures, and then close The vacuum of the thimble device 1 is 4, and the squeegee 11 is moved downward from the original second squeegee position 52 to the first squeegee position 51.

使用本發明之晶片分離方法,不論是使用較具有黏性之UV膠帶,或是因成本考量使用較便宜之藍膜皆可容易地使晶片91與膠膜92分離。此外,上述之晶片91主要為特殊製程所需之薄晶片,其厚度小於60微米,當然,一般晶片91亦可以使用。更重要的是本發明之方法,不會在晶片91與膠膜92分離過程中造成晶片91裂損,只需藉由頂針裝置11之適當尺寸的刮板11,即可不限晶片91尺寸使用,進而方便製程使用,因不需更換治具,故可節省大量更換治具的成本。With the wafer separation method of the present invention, the wafer 91 can be easily separated from the film 92 regardless of whether a more viscous UV tape is used or a less expensive blue film is used for cost considerations. In addition, the above-mentioned wafer 91 is mainly a thin wafer required for a special process, and its thickness is less than 60 micrometers. Of course, the general wafer 91 can also be used. More importantly, the method of the present invention does not cause the wafer 91 to be cracked during the separation process of the wafer 91 and the film 92, and the wafer 11 size can be used only by the appropriate size of the squeegee 11 of the ejector device 11. In addition, the process is convenient to use, and the cost of replacing the jig can be saved because the jig is not required to be replaced.

以上所述僅為本發明之較佳實施例,並非用以限定本發明之申請專利權利;同時以上的描述,對於熟知本技術領域之專門人士應可明瞭及實施,因此其他未脫離本發明所揭示之精神下所完成的等效改變或修飾,均應包含在申請專利範圍中。The above description is only the preferred embodiment of the present invention, and is not intended to limit the patent application rights of the present invention. The above description should be understood and implemented by those skilled in the art, so that the other embodiments are not deviated from the present invention. Equivalent changes or modifications made in the spirit of the disclosure should be included in the scope of the patent application.

1...頂針裝置1. . . Thimble device

11...刮板11. . . Scraper

12...頂針12. . . thimble

21...第一位置twenty one. . . First position

22...第二位置twenty two. . . Second position

31...第一方向31. . . First direction

32...第二方向32. . . Second direction

4...真空4. . . vacuum

51...第一刮板位置51. . . First screed position

52...第二刮板位置52. . . Second screed position

6...取出裝置6. . . Take out device

71...預定位置71. . . Predetermined location

91...晶片91. . . Wafer

92...膠膜92. . . Film

w0 ...刮板寬度w 0 . . . Scraper width

w1 ...晶片寬度w 1 . . . Wafer width

L...晶片長度L. . . Wafer length

第1A圖為一立體圖,係根據本發明提出之第一或第二較佳實施例,為一種頂針裝置。1A is a perspective view showing a thimble device according to a first or second preferred embodiment of the present invention.

第1B圖為一剖視圖,係根據本發明提出之第一或第二較佳實施例,為一種頂針裝置及晶片。1B is a cross-sectional view showing a thimble device and a wafer in accordance with a first or second preferred embodiment of the present invention.

第1C圖為一剖視圖,係根據本發明提出之第一或第二較佳實施例,為一種頂針裝置及晶片。1C is a cross-sectional view showing a thimble device and a wafer in accordance with a first or second preferred embodiment of the present invention.

第1D圖為一剖視圖,係根據本發明提出之第一或第二較佳實施例,為一種頂針裝置及晶片。1D is a cross-sectional view showing a thimble device and a wafer in accordance with a first or second preferred embodiment of the present invention.

第1E圖為一剖視圖,係根據本發明提出之第一或第二較佳實施例,為一種頂針裝置及晶片。1E is a cross-sectional view showing a thimble device and a wafer in accordance with a first or second preferred embodiment of the present invention.

第1F圖為一剖視圖,係根據本發明提出之第一或第二較佳實施例,為一種頂針裝置及晶片。1F is a cross-sectional view showing a thimble device and a wafer in accordance with a first or second preferred embodiment of the present invention.

第2A圖為一剖視圖,係根據本發明提出之第二較佳實施例,為一種取出裝置、頂針裝置及晶片。2A is a cross-sectional view showing a second preferred embodiment of the present invention, which is a take-up device, a thimble device, and a wafer.

第2B圖為一剖視圖,係根據本發明提出之第二較佳實施例,為一種取出裝置、頂針裝置及晶片。2B is a cross-sectional view showing a second preferred embodiment of the present invention, which is a take-up device, a thimble device, and a wafer.

第3A圖為一剖視圖,係根據本發明提出之第三較佳實施例,為一種頂針裝置及晶片。3A is a cross-sectional view showing a thimble device and a wafer in accordance with a third preferred embodiment of the present invention.

第3B圖為一剖視圖,係根據本發明提出之第三較佳實施例,為一種頂針裝置及晶片。Figure 3B is a cross-sectional view showing a thimble device and a wafer in accordance with a third preferred embodiment of the present invention.

第3C圖為一剖視圖,係根據本發明提出之第三較佳實施例,為一種頂針裝置及晶片。Figure 3C is a cross-sectional view showing a thimble device and a wafer in accordance with a third preferred embodiment of the present invention.

第3D圖為一剖視圖,係根據本發明提出之第三較佳實施例,為一種頂針裝置及及晶片。3D is a cross-sectional view showing a thimble device and a wafer in accordance with a third preferred embodiment of the present invention.

1...頂針裝置1. . . Thimble device

11...刮板11. . . Scraper

12...頂針12. . . thimble

91...晶片91. . . Wafer

92...膠膜92. . . Film

21...第一位置twenty one. . . First position

51...第一刮板位置51. . . First screed position

L...晶片長度L. . . Wafer length

Claims (41)

一種晶片與膠膜分離方法,供半導體黏晶製程時使用,主要包含有:提供一頂針裝置,該頂針裝置具有一刮板;提供至少一晶片,該晶片底部黏著有膠膜;施以一定位程序,將該晶片定位於該頂針裝置上方之第一位置;沿第一方向以一適當距離水平移動該晶片,使得該晶片位於第二位置,且該頂針裝置之刮板位於鄰近該晶片之邊緣部份;開啟一真空,以吸附該晶片連同該膠膜向下;將該頂針裝置之刮板從第一刮板位置向上移動至第二刮板位置,使該刮板頂住該膠膜;以及將該晶片連同該膠膜沿第二方向水平移動一個晶片長度的距離,該第二方向係相反於該第一方向。 A method for separating a wafer from a film for use in a semiconductor die bonding process, comprising: providing a thimble device having a squeegee; providing at least one wafer having a film adhered to the bottom; applying a positioning a process of positioning the wafer at a first position above the thimble device; moving the wafer horizontally at an appropriate distance in a first direction such that the wafer is in a second position, and the squeegee of the thimble device is located adjacent the edge of the wafer Part: opening a vacuum to adsorb the wafer together with the film downward; moving the squeegee of the thimble device upward from the first squeegee position to the second squeegee position, causing the squeegee to withstand the film; And moving the wafer along with the film horizontally in a second direction by a length of the wafer, the second direction being opposite to the first direction. 依據申請專利範圍第1項之晶片與膠膜分離方法,其中該刮板係為一板片狀結構。 The wafer and film separation method according to the first aspect of the patent application, wherein the squeegee is a sheet-like structure. 依據申請專利範圍第1項之晶片與膠膜分離方法,其中該刮板係由複數個針體排列而成。 The wafer and film separation method according to the first aspect of the patent application, wherein the squeegee is formed by arranging a plurality of needles. 依據申請專利範圍第1項之晶片與膠膜分離方法,其中該刮板的寬度係小於該晶片之寬度。 The wafer and film separation method according to claim 1, wherein the width of the squeegee is smaller than the width of the wafer. 依據申請專利範圍第4項之晶片與膠膜分離方法,其中該刮板的寬度為該晶片寬度的85%至98%之間。 A method of separating a wafer from a film according to claim 4, wherein the width of the blade is between 85% and 98% of the width of the wafer. 依據申請專利範圍第1項之晶片與膠膜分離方法,其中該定位程序係經由一CCD(CHARGE-COUPLED DEVICE/電荷耦合元件)之影像感測器協助之。 The method for separating a wafer and a film according to claim 1 of the patent application, wherein the positioning program is assisted by an image sensor of a CCD (CHARGE-COUPLED DEVICE). 依據申請專利範圍第1項之晶片與膠膜分離方法,其中該晶片為薄晶片。 The wafer and film separation method according to claim 1, wherein the wafer is a thin wafer. 依據申請專利範圍第7項之晶片與膠膜分離方法,其中該薄晶片的厚度小於60微米。 A wafer and film separation method according to claim 7 wherein the thin wafer has a thickness of less than 60 μm. 依據申請專利範圍第1項之晶片與膠膜分離方法,其中,沿第二方向水 平移動該晶片連同該膠膜一個晶片長度的距離之後,進一步包含:關閉該真空,且將該刮板向下移動至該第一刮板位置。 A method for separating a wafer and a film according to claim 1 of the patent application, wherein the water is in the second direction After moving the wafer flat along with the length of the wafer for one wafer length, further comprising: closing the vacuum and moving the squeegee downward to the first squeegee position. 依據申請專利範圍第9項之晶片與膠膜分離方法,其中,關閉該真空,且將該刮板向下移動至該第一刮板位置之後,進一步包含:沿第一方向以一適當距離水平移動該晶片。 The wafer and film separation method according to claim 9 , wherein the vacuum is turned off and the squeegee is moved downward to the first squeegee position, further comprising: at an appropriate distance level along the first direction The wafer is moved. 依據申請專利範圍第10項之晶片與膠膜分離方法,其中,沿第一方向以一適當距離水平移動該晶片之後,進一步包含:施以二次定位程序,將該晶片定位於該頂針裝置上方之第一位置。 The wafer and film separation method according to claim 10, wherein after the wafer is horizontally moved at an appropriate distance in the first direction, the method further comprises: applying a secondary positioning program to position the wafer above the thimble device The first position. 依據申請專利範圍第1、10或11項之晶片與膠膜分離方法,其中該適當距離係為該晶片的二分之一長度。 A wafer and film separation method according to claim 1, 10 or 11, wherein the appropriate distance is one-half of the length of the wafer. 依據申請專利範圍第1項之晶片與膠膜分離方法,其中該膠膜為UV膠帶。 A wafer and film separation method according to the first aspect of the patent application, wherein the film is a UV tape. 依據申請專利範圍第1項之晶片與膠膜分離方法,其中該膠膜為藍膜。 The method for separating a wafer from a film according to the first aspect of the patent application, wherein the film is a blue film. 依據申請專利範圍第1項之晶片與膠膜分離方法,其中該頂針裝置進一步可包含複數個頂針。 The wafer and film separation method according to claim 1, wherein the thimble device further comprises a plurality of thimbles. 依據申請專利範圍第15項之晶片與膠膜分離方法,其中該複數個頂針係分佈在該刮板兩側。 The wafer and film separation method according to claim 15 , wherein the plurality of thimbles are distributed on both sides of the squeegee. 一種晶片取出方法,供半導體黏晶製程時使用,主要包含有:提供一頂針裝置,該頂針裝置具有一刮板;提供至少一晶片,該晶片底部黏著有膠膜;施以一定位程序,將該晶片定位於該頂針裝置上方之第一位置;沿第一方向以一適當距離水平移動該晶片,使得該晶片位於第二位置,且該頂針裝置之刮板位於鄰近該晶片之邊緣部份;開啟一真空,以吸附該晶片連同該膠膜向下;將該頂針裝置之刮板從第一刮板位置向上移動至第二刮板位置,使該刮板頂住該膠膜; 將該晶片連同該膠膜沿第二方向水平移動一個晶片長度的距離,該第二方向係相反於該第一方向;關閉該真空,且將該刮板向下移動至該第一刮板位置;沿第一方向以一適當距離水平移動該晶片;施以二次定位程序,將該晶片定位於該頂針裝置上方之第一位置;開啟真空,以吸附該膠膜向下;以及以一取放機將該底部膠膜已分離之晶片取出。 A wafer removal method for use in a semiconductor die bonding process, comprising: providing a thimble device having a squeegee; providing at least one wafer with a film adhered to the bottom; applying a positioning program Positioning the wafer at a first position above the ejector device; moving the wafer horizontally at an appropriate distance along the first direction such that the wafer is in the second position, and the squeegee of the thimble device is located adjacent to an edge portion of the wafer; Opening a vacuum to adsorb the wafer together with the film downward; moving the squeegee of the thimble device upward from the first squeegee position to the second squeegee position, causing the squeegee to withstand the film; Moving the wafer along with the film horizontally in a second direction by a distance of one wafer length, the second direction being opposite to the first direction; closing the vacuum and moving the squeegee downward to the first squeegee position Moving the wafer horizontally at an appropriate distance along the first direction; applying a secondary positioning procedure to position the wafer at a first position above the thimble device; opening a vacuum to adsorb the film downward; and taking a The player removes the wafer from which the bottom film has been separated. 依據申請專利範圍第17項之晶片取出方法,其中該適當距離係為該晶片的二分之一長度。 The wafer takeout method according to claim 17, wherein the appropriate distance is one-half of the length of the wafer. 依據申請專利範圍第17項之晶片取出方法,其中該刮板係為一板片狀結構。 The wafer removing method according to claim 17, wherein the squeegee is a sheet-like structure. 依據申請專利範圍第17項之晶片取出方法,其中該刮板係由複數個針體排列而成。 The wafer removing method according to claim 17, wherein the squeegee is formed by arranging a plurality of needles. 依據申請專利範圍第17項之晶片取出方法,其中該刮板的寬度係小於該晶片之寬度。 The wafer removing method according to claim 17, wherein the width of the squeegee is smaller than the width of the wafer. 依據申請專利範圍第21項之晶片取出方法,其中該刮板的寬度為該晶片寬度的85%至98%之間。 A wafer takeout method according to claim 21, wherein the width of the squeegee is between 85% and 98% of the width of the wafer. 依據申請專利範圍第17項之晶片取出方法,其中該定位程序與二次定位程序係經由一CCD之影像感測器協助之。 According to the wafer take-out method of claim 17, wherein the positioning program and the secondary positioning program are assisted by a CCD image sensor. 依據申請專利範圍第17項之晶片取出方法,其中該晶片為薄晶片。 A wafer takeout method according to claim 17, wherein the wafer is a thin wafer. 依據申請專利範圍第24項之晶片取出方法,其中該薄晶片的厚度小於60微米。 The wafer removing method according to claim 24, wherein the thin wafer has a thickness of less than 60 μm. 依據申請專利範圍第17項之晶片取出方法,其中該頂針裝置進一步包含複數個頂針,當施以二次定位程序之後,開啟真空,以吸附膠膜向下,該複數個頂針向上頂出,以便於將該底部膠膜已分離之晶片取出。 The wafer removing method according to claim 17, wherein the thimble device further comprises a plurality of thimbles, and after applying the secondary positioning program, the vacuum is turned on to adsorb the film downward, and the plurality of thimbles are pushed upwards so that The wafer whose bottom film has been separated is taken out. 依據申請專利範圍第26項之晶片取出方法,其中該複數個頂針係分佈在 該刮板兩側。 According to the wafer take-out method of claim 26, wherein the plurality of thimbles are distributed The sides of the scraper. 依據申請專利範圍第17項之晶片取出方法,其中該膠膜為UV膠帶。 The wafer removing method according to claim 17, wherein the film is a UV tape. 依據申請專利範圍第17項之晶片取出方法,其中該膠膜為藍膜。 The wafer removing method according to claim 17, wherein the film is a blue film. 一種晶片與膠膜分離方法,供半導體黏晶製程時使用,主要包含有:提供一頂針裝置,該頂針裝置具有一刮板;提供至少一晶片,該晶片底部黏著有膠膜;施以一定位程序,將該晶片定位於該頂針裝置上方之預定位置,使得該頂針裝置之刮板位於鄰近該晶片之邊緣部份;開啟一真空,以吸附該晶片連同該膠膜向下;將該頂針裝置之刮板從第一刮板位置向上移動至第二刮板位置,使該刮板頂住該膠膜;將該晶片連同該膠膜沿第一方向水平移動大約一個晶片長度的距離;以及關閉該真空,且將該刮板向下移動至該第一刮板位置。 A method for separating a wafer from a film for use in a semiconductor die bonding process, comprising: providing a thimble device having a squeegee; providing at least one wafer having a film adhered to the bottom; applying a positioning a process of positioning the wafer at a predetermined position above the thimble device such that the squeegee of the thimble device is located adjacent to an edge portion of the wafer; opening a vacuum to adsorb the wafer along with the film downward; the thimble device The squeegee moves upward from the first squeegee position to the second squeegee position to cause the squeegee to withstand the film; the wafer is moved horizontally along the first direction by a distance of about one wafer length; and the wafer is closed The vacuum is moved and the squeegee is moved down to the first squeegee position. 依據申請專利範圍第30項之晶片與膠膜分離方法,其中該刮板係為一板片狀結構。 The wafer and film separation method according to claim 30, wherein the squeegee is a sheet-like structure. 依據申請專利範圍第30項之晶片與膠膜分離方法,其中該刮板係由複數個針體排列而成。 The wafer and film separation method according to claim 30, wherein the squeegee is formed by arranging a plurality of needles. 依據申請專利範圍第30項之晶片與膠膜分離方法,其中該刮板的寬度係小於該晶片之寬度。 The wafer and film separation method according to claim 30, wherein the width of the squeegee is smaller than the width of the wafer. 依據申請專利範圍第33項之晶片與膠膜分離方法,其中該刮板的寬度為該晶片寬度的85%至98%之間。 The wafer and film separation method according to claim 33, wherein the width of the blade is between 85% and 98% of the width of the wafer. 依據申請專利範圍第30項之晶片與膠膜分離方法,其中該定位程序係經由一CCD之影像感測器協助之。 The wafer and film separation method according to claim 30, wherein the positioning program is assisted by a CCD image sensor. 依據申請專利範圍第30項之晶片與膠膜分離方法,其中該晶片為薄晶片。 A wafer and film separation method according to claim 30, wherein the wafer is a thin wafer. 依據申請專利範圍第36項之晶片與膠膜分離方法,其中該薄晶片的厚度小於60微米。 A wafer and film separation method according to claim 36, wherein the thin wafer has a thickness of less than 60 μm. 依據申請專利範圍第30項之晶片與膠膜分離方法,其中該膠膜為UV膠帶。 The wafer and film separation method according to claim 30, wherein the film is a UV tape. 依據申請專利範圍第30項之晶片與膠膜分離方法,其中該膠膜為藍膜。 The wafer and film separation method according to claim 30, wherein the film is a blue film. 依據申請專利範圍第30項之晶片與膠膜分離方法,其中該頂針裝置進一步可包含複數個頂針。 The wafer and film separation method according to claim 30, wherein the thimble device further comprises a plurality of thimbles. 依據申請專利範圍第40項之晶片與膠膜分離方法,其中該複數個頂針係分佈在該刮板兩側。 The wafer and film separation method according to claim 40, wherein the plurality of thimbles are distributed on both sides of the squeegee.
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