TWI641070B - Needle device for chip - Google Patents
Needle device for chip Download PDFInfo
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- TWI641070B TWI641070B TW107100758A TW107100758A TWI641070B TW I641070 B TWI641070 B TW I641070B TW 107100758 A TW107100758 A TW 107100758A TW 107100758 A TW107100758 A TW 107100758A TW I641070 B TWI641070 B TW I641070B
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- oblique
- groove
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- outer frames
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- 238000009423 ventilation Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 abstract description 13
- 239000002390 adhesive tape Substances 0.000 abstract description 11
- 235000012431 wafers Nutrition 0.000 description 77
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 238000005273 aeration Methods 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Dicing (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
本發明係一種晶片頂針裝置，係主要包含有複數外框及一中間平台，該複數外框與該中間平台係同軸設置，各該外框之各邊的頂面上形成有複數第一及第二斜向槽道，各該第一及第二斜向槽道的內壁呈平面，並與該中間平台的第一及第二凹槽連通；如此，當本發明晶片頂針裝置設置於一真空環境，該些第一及第二斜向槽道與第一及第二凹槽即可提供上方黏著有晶片之膠帶一個均勻真空吸力，使得該些外框及中間平台於上頂膠帶過程中，降低晶片破損率。The invention relates to a wafer thimble device, which mainly includes a plurality of outer frames and an intermediate platform. The plurality of outer frames and the middle platform are coaxially arranged. A plurality of first and Two oblique channels, the inner walls of each of the first and second oblique channels are flat and communicate with the first and second grooves of the intermediate platform; thus, when the wafer thimble device of the present invention is set in a vacuum Environment, the first and second oblique channels and the first and second grooves can provide a uniform vacuum suction for the adhesive tape with the wafer attached above, so that the outer frame and the middle platform are in the process of upper tape, Reduce wafer breakage.
Description
本發明係關於一種晶片頂針，尤指一種多段式的晶片頂針裝置。The invention relates to a wafer thimble, in particular to a multi-stage wafer thimble device.
在半導體封裝製程中，複數晶片會暫時貼於一膠帶上，並於完成特定製程步驟後，再自膠帶上分別拾取出晶片以進行下一道製程步驟；其中最常見的晶片拾取作法，係於膠帶下方設有一針狀頂針，而晶片上方設有一真空吸頭，先將該針將頂針對準晶片位置後向上頂凸該晶片，以使晶片靠近該真空吸頭，再由真空吸頭將晶片吸取並脫離該膠帶；如此重覆，直到膠帶上晶片被拾取完畢為止。In the semiconductor packaging process, a plurality of wafers are temporarily affixed to a tape, and after a specific process step is completed, the wafers are individually picked up from the tape for the next process step; the most common wafer picking method is based on the tape A needle-like ejector pin is provided below, and a vacuum tip is provided above the wafer. The pin is first aligned with the position of the wafer, and the wafer is convexed upward to bring the wafer close to the vacuum tip, and the wafer is sucked by the vacuum tip. Remove the tape; repeat this until the wafer on the tape has been picked up.
前揭傳統針狀的頂針在頂凸晶片的過程中，壓力會集中在晶片的一處，如此對於目前愈趨輕薄的晶片來說，傳統針狀頂針於頂凸過程中，其集中的頂凸壓力會容易損壞晶片，因此如圖9所示，一種多段式晶片頂針裝置60被提出，其由外至內包含有複數外框61及一中間平台62。再如圖10所示，各該外框61在各長邊頂面及各短邊頂面分別向下凹設形成有一或多個凹槽611、612，又該些外框61之相同位置的凹槽611、612會相互連通，該中間平台62對應該些外框61之長邊頂面的凹槽611位置，亦形成有長形凹槽621，使該些外框61之兩相對長邊頂面的凹槽611，進一步透過該長凹槽621相互連通，各該外框61內壁形成有通氣孔隙613。During the process of exposing the traditional pin-shaped thimble before the wafer is convex, the pressure will be concentrated on one part of the wafer. Therefore, for the current thinner and thinner wafers, the traditional pin-shaped thimble is in the process of the convexity. The pressure may easily damage the wafer. Therefore, as shown in FIG. 9, a multi-stage wafer thimble device 60 is proposed, which includes a plurality of outer frames 61 and an intermediate platform 62 from the outside to the inside. As shown in FIG. 10, each of the outer frames 61 is recessed on the top surface of each long side and the top surface of each short side to form one or more grooves 611 and 612 downward, respectively. The grooves 611 and 612 will communicate with each other. The middle platform 62 corresponds to the position of the grooves 611 on the top surface of the long sides of the outer frames 61, and a long groove 621 is also formed so that the two relatively long sides of the outer frames 61 The grooves 611 on the top surface are further communicated with each other through the long grooves 621, and the inner wall of each outer frame 61 is formed with a ventilation hole 613.
使用時，該多段式晶片頂針裝置60會設置在一真空環境中，而於拾取過程中，該多段式晶片頂針裝置60會向上對準膠帶上的晶片，同時該真空環境透過數個連通的凹槽及通氣孔隙，提供該多段式晶片頂針裝置60一向下真空吸力，以吸力固定膠帶，接著該多段式晶片頂針裝置60的複數外框61及中間平台62，再依序由外至內向上頂推該膠帶，最後由該中間平台62推升最高。由於該中間平台62的長、寬相較各該外框的長、寬為最小，故而在該多段式晶片頂針裝置60的上頂過程中，該晶片底面周圍與膠帶之間的黏著強度漸進地減小，便於一拾取頭拾取該晶片，以脫離該膠帶。In use, the multi-segment wafer thimble device 60 will be set in a vacuum environment, and during the pick-up process, the multi-segment wafer thimble device 60 will align the wafer on the tape upward, and the vacuum environment passes through several communicating recesses. Grooves and vent holes to provide the multi-section wafer thimble device 60 with a vacuum suction down to fix the adhesive tape, followed by the plurality of outer frames 61 and the middle platform 62 of the multi-section wafer thimble device 60, and then eject from top to bottom in order The tape is pushed, and finally pushed up by the intermediate platform 62. Since the length and width of the intermediate platform 62 are the smallest compared to the length and width of each of the outer frames, during the ascending process of the multi-segment wafer ejector device 60, the adhesive strength around the bottom surface of the wafer and the tape gradually increases. Reduced to facilitate picking up of the wafer by a pick-up head to release the tape.
前揭多段式晶片頂針裝置相較針狀頂針分散上頂於晶片上單處的力，而減少晶片於拾取過程中破損的機率；如圖10所示，由於該多段式晶片頂針裝置60的複數個相連通的凹槽611、612，僅有長邊頂面凹槽611進一步與該中間平台62的長形凹槽621連通，構成較長的槽道，加上相互連通的之凹槽611、612內壁不連續而呈階梯狀，對於以吸力固定該膠帶的力道有限，吸力也不夠平均，在拾取厚度更薄化的晶片應用中，易於上頂膠帶過程中造成薄化晶片破損；是以，此種多段式晶片頂針裝置60因應薄化晶片的拾取作業，仍有必要進一步改良之。Compared with the needle-like thimble, the multi-segment wafer thimble device that is released before is used to disperse the force on a single place on the wafer, thereby reducing the chance of the wafer being damaged during picking up; as shown in FIG. There are two communicating grooves 611 and 612, and only the long-side top surface groove 611 is further communicated with the long groove 621 of the intermediate platform 62 to form a longer channel, and the communicating grooves 611, The inner wall of 612 is discontinuous and has a step shape. The force for fixing the tape with suction is limited and the suction is not even enough. In the application of picking up wafers with thinner thickness, it is easy to damage the thin wafer during the process of mounting the tape; The multi-stage wafer thimble device 60 needs to be further improved in response to the pick-up operation of thin wafers.
有鑑於上述多段式晶片頂針裝置的缺陷，本發明的主要發明目的係提供一種晶片頂針裝置，可在晶片拾取作業中，減低晶片受頂針上堆而破損的機率。In view of the shortcomings of the above-mentioned multi-stage wafer ejector device, the main object of the present invention is to provide a wafer ejector device, which can reduce the probability of a wafer being damaged by being piled on the ejector pin during wafer picking operation.
欲達上述目的所使用的主要技術手段係令該晶片頂針裝置包含有： 複數外框，係依序由外至內同軸匹配設置，各外框的至少一內側面形成有一通氣間隙； 一中間平台，係匹配設置於該些外框的最內外框中，該中間平台形成有至少一第一凹槽及至少一第二凹槽；其中各該第一凹槽係與各該第二凹槽相互連通； 複數第一斜向槽道，係形成於該些外框各邊的頂面上，各該第一斜向槽道的內壁係呈平面，且至少一第一斜向槽道與該至少一第一及第二凹槽連通；以及 複數第二斜向槽道，係形成於該些外框各邊的頂面上，各該第二斜向槽道與各該第一斜向槽道的傾斜方向為相反，又各該第二斜向槽道的內壁係呈平面，且至少一第二斜向槽道與該至少一第一及第二凹槽連通。The main technical means used to achieve the above purpose is to make the chip thimble device include: a plurality of outer frames, which are arranged coaxially in order from outer to inner, and at least one inner side of each outer frame is formed with a ventilation gap; an intermediate platform Are arranged in the innermost and outer frames of the outer frames, and the middle platform is formed with at least a first groove and at least a second groove; wherein each of the first grooves and each of the second grooves are mutually A plurality of first oblique channels are formed on the top surfaces of the sides of the outer frames, and the inner walls of each of the first oblique channels are flat, and at least one first oblique channel and the At least one first and second groove are in communication; and a plurality of second inclined grooves are formed on the top surfaces of the sides of the outer frames, each of the second inclined grooves and each of the first inclined grooves. The inclined directions of the channels are opposite, and the inner walls of each of the second inclined channels are flat, and at least one second inclined channel is in communication with the at least one first and second grooves.
由上述可知，本發明係主要於該些外框各邊的頂面上形成有複數第一及第二斜向槽道，各該第一及第二斜向槽道的內壁呈平面，而無階梯狀，又與該中間平台的第一及第二凹槽連通；如此，當本發明晶片頂針裝置設置於一真空環境，該些第一及第二斜向槽道與第一及第二凹槽即可提供上方黏著有晶片之膠帶一個均勻真空吸力，使得該些外框及中間平台於上頂膠帶過程中，降低晶片破損率。As can be seen from the above, the present invention is mainly formed on the top surfaces of the sides of the outer frames with a plurality of first and second inclined channels, and the inner walls of each of the first and second inclined channels are flat, and It has no step shape and communicates with the first and second grooves of the intermediate platform. In this way, when the wafer thimble device of the present invention is set in a vacuum environment, the first and second oblique channels and the first and second grooves The groove can provide a uniform vacuum suction force for the tape with the wafer attached on the top, so that the outer frame and the intermediate platform can reduce the damage rate of the wafer during the process of the upper tape.
本發明係針對晶片頂針裝置進行結構改良，並以數個實施例配合圖式加以詳加說明本發明晶片頂針裝置的結構特徵。The present invention is to improve the structure of the wafer thimble device, and the structure characteristics of the wafer thimble device of the present invention will be described in detail with several embodiments and drawings.
首先請參閱圖1所示，係為本發明晶片頂針裝置10的第一實施例，其包含有複數外框11、12、13及一中間平台14，該複數外框11、12、13及中間平台14係由外至向同軸設置，其中該中間平台14設置在該最內之一外框13中。於組裝完畢後，該些外框11、12、13及該中間平台14的頂面係共平面，又於本實施例中，該些外框11、12、13上形成有複數第一斜向槽道101及複數第二斜向槽道102。First, please refer to FIG. 1, which is a first embodiment of a wafer thimble device 10 according to the present invention, which includes a plurality of outer frames 11, 12, 13 and an intermediate platform 14. The plurality of outer frames 11, 12, 13 and the middle The platform 14 is coaxially arranged from the outside to the outside, wherein the intermediate platform 14 is arranged in the innermost outer frame 13. After the assembly is completed, the top surfaces of the outer frames 11, 12, 13 and the intermediate platform 14 are coplanar, and in this embodiment, a plurality of first oblique directions are formed on the outer frames 11, 12, 13 The channel 101 and the plurality of second diagonal channels 102.
為方便說明，以下係以三個外框11、12、13說明之，且由外至內為第一至第三外框11、12、13，請配合參閱圖2所示，該第一外框11係呈矩形並包含有二長邊及二短邊，於各長邊及各短邊上分別形成有複數道第一斜向凹槽111及複數第二斜向凹槽112，各該第一斜向凹槽111的傾斜方向與各該第二斜向凹槽112的傾斜方向相反，故可於各該長邊及短邊的中間位置由兩相近的第一及第二斜向凹槽111、112彼此交錯，以構成相互連通的V形槽。該第一外框11的內側面110a形成有一第一通氣間隙113；於本實施例，由於該第一外框11係呈矩形，故包含有四外側面110b及四內側面110a，並於各內側面110a上分別形成有一第一通氣間隙113。For the convenience of explanation, the following is described with three outer frames 11, 12, 13 and the first to third outer frames 11, 12, 13 are shown from the outside to the inside. Please refer to FIG. 2 for the first outer frame. The frame 11 is rectangular and includes two long sides and two short sides. A plurality of first oblique grooves 111 and a plurality of second oblique grooves 112 are formed on each long side and each short side. The oblique direction of an oblique groove 111 is opposite to the oblique direction of each of the second oblique grooves 112. Therefore, the middle position of each of the long and short sides can be changed by two adjacent first and second oblique grooves. 111 and 112 are staggered with each other to form a V-shaped groove connected with each other. A first ventilation gap 113 is formed on the inner side surface 110a of the first outer frame 11. In this embodiment, since the first outer frame 11 is rectangular, it includes four outer side surfaces 110b and four inner side surfaces 110a. A first ventilation gap 113 is formed on each of the inner side surfaces 110a.
上述第二外框12的長寬小於該第一外框11的長寬，並匹配套設於該第一外框11中，其外側面120b係抵靠於該第一外框11的內側面110a，該第二外框12係包含有二長邊及二短邊，於各該長邊及各該短邊對應該第一外框11的各該第一斜向凹槽111處形成有一第一斜向凹槽121，且該第二外框12的各該第一斜向槽121的內壁1211係與其所對應該第一外框11的第一斜向槽111的內壁1111共平面，該第二外框12的各該長邊及各該短邊對應該第一外框11的各該第二斜向凹槽112處形成有一第二斜向凹槽122，且該第二外框12的各該第二斜向槽122的內壁1221係與其所對應該第一外框11的第二斜向槽112的內壁1121共平面。該第二外框12的內側面120a形成有一第二通氣間隙123；於本實施例，由於該第二外框12亦係呈矩形，故包含有四外側面120b及四內側面120a，各內側面120a上分別形成有一第二通氣間隙123，並與該第一外框11之對應內側面110a的第一通氣間隙113對齊。The length and width of the second outer frame 12 are smaller than the length and width of the first outer frame 11, and are matched and sleeved in the first outer frame 11. The outer side surface 120 b of the second outer frame abuts against the inner side surface of the first outer frame 11. 110a, the second outer frame 12 includes two long sides and two short sides, and a first portion is formed at each of the first oblique grooves 111 of each of the long sides and the short sides corresponding to the first outer frame 11. An oblique groove 121, and the inner wall 1211 of each of the first oblique grooves 121 of the second outer frame 12 is coplanar with the inner wall 1111 of the first oblique groove 111 corresponding to the first outer frame 11. A second oblique groove 122 is formed at each of the long sides and the short sides of the second outer frame 12 corresponding to the second oblique grooves 112 of the first outer frame 11, and the second outer The inner wall 1221 of each of the second oblique grooves 122 of the frame 12 is coplanar with the inner wall 1121 of the second oblique groove 112 corresponding to the first outer frame 11. A second ventilation gap 123 is formed on the inner side surface 120a of the second outer frame 12. In this embodiment, since the second outer frame 12 is also rectangular, it includes four outer side surfaces 120b and four inner side surfaces 120a. A second ventilation gap 123 is formed on each of the side surfaces 120 a and is aligned with the first ventilation gap 113 of the corresponding inner side surface 110 a of the first outer frame 11.
上述該第三外框13的長寬小於該第二外框12的長寬，並匹配套設於該第二外框12中，其外側面130b係抵靠於該第二外框12的內側面120a，該第三外框13係包含有二長邊及二短邊，於各該長邊及各該短邊對應該第二外框12的各該第一斜向凹槽121形成有第一斜向凹槽131，且該第三外框13的各該第一斜向槽131的內壁1311係與對應該第二外框12的第一斜向槽121的內壁1211共平面，以構成如圖1及圖3所示的第一斜向槽道101；且該第三外框13的各該長邊及各該短邊對應該第二外框12的各該第二斜向凹槽122，形成有第一第二斜向凹槽132，該第三外框13的各該第二斜向槽132的內壁1321係與其所對應該第二外框12的第二斜向槽122的內壁1221共平面，以構成如圖1及圖3所示的第二斜向槽道102。該第三外框13的內側面130a形成有一第三通氣間隙133；於本實施例，該第三外框13係亦呈矩形，故包含有四外側面130b及四內側面130a，並於各內側面130a上分別形成有一第三通氣間隙133，並與該第二外框12之對應內側面120a的第二通氣間隙123對齊。The length and width of the third outer frame 13 are smaller than the length and width of the second outer frame 12. The third outer frame 13 is fitted in the second outer frame 12. The outer side 130 b of the third outer frame abuts the inner side of the second outer frame 12. On the side 120a, the third outer frame 13 includes two long sides and two short sides. Each of the long sides and the short sides corresponding to the first oblique groove 121 of the second outer frame 12 is formed with a first An oblique groove 131, and the inner wall 1311 of each of the first oblique grooves 131 of the third outer frame 13 is coplanar with the inner wall 1211 of the first oblique groove 121 corresponding to the second outer frame 12, The first oblique channel 101 shown in FIG. 1 and FIG. 3 is configured; and each of the long sides and each of the short sides of the third outer frame 13 corresponds to each of the second oblique directions of the second outer frame 12. The groove 122 is formed with a first and second oblique groove 132, and an inner wall 1321 of each of the second oblique grooves 132 of the third outer frame 13 corresponds to a second oblique direction corresponding to the second outer frame 12. The inner wall 1221 of the groove 122 is coplanar to form a second oblique channel 102 shown in FIGS. 1 and 3. A third ventilation gap 133 is formed on the inner side surface 130a of the third outer frame 13. In this embodiment, the third outer frame 13 is also rectangular, so it includes four outer side surfaces 130b and four inner side surfaces 130a. A third ventilation gap 133 is formed on each of the inner side surfaces 130 a and is aligned with the second ventilation gap 123 of the corresponding inner side surface 120 a of the second outer frame 12.
上述中間平台14係形成有一第一凹槽141及複數第二凹槽142，其外側面140係抵靠於該第三外框13的內側面130a，於本實施例中，該中間平台14亦呈矩形，該第一凹槽141係呈長形，並貫穿該中間平台14的二短側，以與位置相對應的該第三外框13之短邊的第一及第二斜向凹槽131、132(即V形槽)連通；又各該第二凹槽142係呈長形，並貫穿該中間平台14的二長側，以與位置相對應的該第三外框13之長邊的第一及第二斜向凹槽131、132(即V形槽)連通，各該第二凹槽142又與該複數第一凹槽141彼此交錯連通，構成複數個十字形槽。The above intermediate platform 14 is formed with a first groove 141 and a plurality of second grooves 142, and an outer side surface 140 thereof abuts against an inner side surface 130a of the third outer frame 13. In this embodiment, the intermediate platform 14 is also It is rectangular, and the first groove 141 is elongated and penetrates the two short sides of the middle platform 14 with first and second oblique grooves corresponding to the short sides of the third outer frame 13 corresponding to the position. 131 and 132 (ie, V-shaped grooves) communicate; each of the second grooves 142 is elongated and penetrates the two long sides of the intermediate platform 14 to correspond to the long side of the third outer frame 13 The first and second oblique grooves 131 and 132 (ie, V-shaped grooves) communicate with each other, and each of the second grooves 142 and the plurality of first grooves 141 alternately communicate with each other to form a plurality of cross-shaped grooves.
請參閱圖3所示，該第一至第三外框11、12、13上係形成由其複數個該第一斜向凹槽111、121、131，所連續構成複數該第一斜向槽道101，以及由其複數個該第二斜向凹槽112、122、132所連續構成複數該第二斜向槽道102，且各該第一及第二斜向槽道101、102的內壁為平面。該中間平台14的第一凹槽141及第二凹槽142係與部分的第一及第二斜向槽道101、102連通。Please refer to FIG. 3, the first to third outer frames 11, 12, and 13 are formed with a plurality of the first inclined grooves 111, 121, and 131, and a plurality of the first inclined grooves are continuously formed. The track 101 and a plurality of the second oblique grooves 112, 122, and 132 are continuously formed by the plurality of the second oblique grooves 102, and the inside of each of the first and second oblique grooves 101, 102 is continuous. The walls are flat. The first groove 141 and the second groove 142 of the intermediate platform 14 communicate with a part of the first and second oblique channels 101 and 102.
請配合參閱圖4所示，上述晶片頂針裝置10係設置於一真空環境20中，於本實施例中，該晶片頂針裝置10係穿設於一真空筒21的頂面，該真空筒21內係呈真空。當進行拾取作業時，該晶片頂針裝置10係對準上方一膠帶40頂面的一晶片30，並貼附於該膠帶40底面的下方，由於該真空筒21內部抽真空，加上各該外框11、12、13的通氣間隙113、123、133，故可於各第一及第二斜向槽道101、102及第一及第二凹槽141、142中形成真空吸力，將其上的膠帶40均勻地吸附並固定於該晶片頂針裝置10的頂面。Please refer to FIG. 4. The above-mentioned wafer thimble device 10 is disposed in a vacuum environment 20. In this embodiment, the wafer thimble device 10 is threaded on the top surface of a vacuum cylinder 21. The system was vacuum. When picking up, the wafer thimble device 10 is aligned with a wafer 30 on the top surface of an adhesive tape 40 above and attached below the bottom surface of the adhesive tape 40. Since the inside of the vacuum cylinder 21 is evacuated, The ventilation gaps 113, 123, and 133 of the frames 11, 12, and 13 can form a vacuum suction force in each of the first and second oblique channels 101, 102 and the first and second grooves 141, 142, and place them thereon. The adhesive tape 40 is evenly adsorbed and fixed on the top surface of the wafer thimble device 10.
接著，再請參閱圖4及圖5A所示，該第二外框12、該第三外框13及該中間平台14一起上頂，連同膠帶40及對準晶片30一併推上一第一高度；此時，該晶片30底面的最外周圍已與膠帶40脫開；再配合參閱圖5B所示，再將該第三外框13及該中間平台14一起上頂至一第二高度，令該晶片30底面與該膠帶40黏著面積再縮小；又再配合參閱圖5C所示，再將該中間平台14上頂至一第三高度，令該晶片30底面與該膠帶40黏著面積更縮小，故當一拾取頭50接觸該晶片30頂面，即可順利地將該晶片30帶離該膠帶40。4 and FIG. 5A, the second outer frame 12, the third outer frame 13, and the intermediate platform 14 are lifted together, pushed together with the adhesive tape 40 and the alignment chip 30 to a first At this time, the outermost periphery of the bottom surface of the wafer 30 has been detached from the adhesive tape 40; then, as shown in FIG. 5B, the third outer frame 13 and the intermediate platform 14 are raised together to a second height. The adhesive area of the bottom surface of the wafer 30 and the adhesive tape 40 is further reduced; as shown in FIG. 5C, the intermediate platform 14 is further raised to a third height, so that the adhesive area of the bottom surface of the wafer 30 and the adhesive tape 40 is further reduced. Therefore, when a pickup head 50 contacts the top surface of the wafer 30, the wafer 30 can be smoothly removed from the tape 40.
由於本發明晶片頂針裝置10頂面均勻形成有複數道第一斜向槽道101及複數道第二斜向槽道102，加上該中間平台14的第一及第二凹槽141、142，即可在拾取作業中，提供該膠帶40一均勻的真空吸力，以減少當該晶片頂針裝置10在上頂過程中造成晶片30的破損的機率。Since the top surface of the wafer thimble device 10 of the present invention is uniformly formed with a plurality of first inclined channels 101 and a plurality of second inclined channels 102, plus the first and second grooves 141 and 142 of the intermediate platform 14, That is, during the pick-up operation, a uniform vacuum suction force is provided for the tape 40 to reduce the chance of the wafer 30 being damaged when the wafer ejector device 10 is in the process of ejecting.
請參閱圖6所示，係為本發明晶片頂針裝置10’的第二較佳實施例，其大多結構與圖1所示的第一較佳實施例相同，惟該中間平台14形成有一貫穿二短側的第一凹槽141，以及複數道第三及第四斜向凹槽143、144，以分別與各該第一及第二斜向槽道101、102連通，而於該晶片頂針裝置10’之頂面的四邊構成全V形槽；也就是，該第三斜向凹槽143的內壁1431係與相連通的該第一斜向槽道101的內壁共平面，該第四斜向凹槽144的內壁1441係與相連通的該第二斜向槽道102的內壁共平面。Please refer to FIG. 6, which is a second preferred embodiment of the wafer thimble device 10 ′ according to the present invention. Most of the structures are the same as the first preferred embodiment shown in FIG. 1, but the intermediate platform 14 is formed with a through The first groove 141 on the short side and the plurality of third and fourth oblique grooves 143 and 144 communicate with the first and second oblique grooves 101 and 102, respectively. The four sides of the top surface of 10 ′ constitute a full V-shaped groove; that is, the inner wall 1431 of the third oblique groove 143 is coplanar with the inner wall of the first oblique groove 101 communicating with it, and the fourth The inner wall 1441 of the oblique groove 144 is coplanar with the inner wall of the second oblique groove 102 communicating with it.
請配合參閱圖7所示，該晶片頂針裝置10’係同樣設置在一真空筒21的頂面上，由於本實施例的晶片頂針裝置10’之頂面的四邊構成全V形槽，當該真空筒21抽真空時，該晶片頂針裝置10’的全V形真空槽可提供上方膠帶40更均勻的真空吸力，如圖8A至圖8C所示，該膠帶40底面對應的更多真空槽道，在該晶片頂針裝置10’每次上頂的過程中，可穩定地吸附膠帶40於其上，使得該晶片頂針裝置10’即更不容易造成該晶片30的破損。Please refer to FIG. 7. The wafer thimble device 10 ′ is also disposed on the top surface of the vacuum cylinder 21. Since the four sides of the top surface of the wafer thimble device 10 ′ of this embodiment form a full V-shaped groove, when the When the vacuum cylinder 21 is evacuated, the full V-shaped vacuum groove of the wafer thimble device 10 'can provide a more uniform vacuum suction force for the upper tape 40, as shown in Figs. 8A to 8C, and more vacuum channels corresponding to the bottom surface of the tape 40 are provided. In each process of pushing the wafer ejector device 10 ′, the adhesive tape 40 can be stably adsorbed thereon, so that the wafer ejector device 10 ′ is less likely to cause damage to the wafer 30.
綜上所述，本發明的晶片頂針裝置主要於該些外框各邊的頂面上形成有複數第一及第二斜向槽道，各該第一及第二斜向槽道的內壁呈平面，而無階梯狀，又與該中間平台的第一及第二凹槽連通；如此，當本發明晶片頂針裝置設置於一真空環境，該些第一及第二斜向槽道與第一及第二凹槽即可提供上方黏著有晶片之膠帶一個均勻真空吸力，使得該些外框及中間平台於上頂膠帶過程中，降低晶片破損率。In summary, the wafer thimble device of the present invention mainly has a plurality of first and second oblique channels formed on the top surfaces of the sides of the outer frames, and the inner walls of each of the first and second oblique channels. It is flat, without a step, and communicates with the first and second grooves of the intermediate platform. Thus, when the wafer thimble device of the present invention is set in a vacuum environment, the first and second oblique channels and the first The first and second grooves can provide a uniform vacuum suction force for the adhesive tape with the wafer on the upper side, so that the outer frame and the intermediate platform can reduce the damage rate of the wafer during the upper tape process.
10、10’‧‧‧晶片頂針裝置
11、12、13‧‧‧外框
110a、120a、130a‧‧‧內側面
110b、120b、130b‧‧‧外側面
111、121、131‧‧‧第一斜向凹槽
1111、1211、1311‧‧‧內壁
112、122、132‧‧‧第二斜向凹槽
1121、1221、1321‧‧‧內壁
113、123、133‧‧‧通氣間隙
14、14’‧‧‧中間平台
140‧‧‧外側面
141‧‧‧第一凹槽
142‧‧‧第二凹槽
143‧‧‧第三斜向凹槽
1431‧‧‧內壁
144‧‧‧第四斜向凹槽
1441‧‧‧內壁
20‧‧‧真空環境
21‧‧‧真空筒
30‧‧‧晶片
40‧‧‧膠帶
50‧‧‧拾取頭
60‧‧‧晶片頂針裝置
61‧‧‧外框
611、612‧‧‧凹槽
62‧‧‧中間平台
621‧‧‧長形凹槽
613‧‧‧通氣孔隙10, 10'‧‧‧ Wafer thimble device
11, 12, 13‧‧‧‧ frame
110a, 120a, 130a ‧‧‧ inside
110b, 120b, 130b
111, 121, 131‧‧‧ first oblique groove
1111, 1211, 1311‧‧‧ inner wall
112, 122, 132‧‧‧ Second oblique groove
1121, 1221, 1321‧‧‧ inner wall
113, 123, 133‧‧‧ Ventilation gap
14, 14'‧‧‧ intermediate platform
140‧‧‧ outside
141‧‧‧first groove
142‧‧‧Second groove
143‧‧‧Third oblique groove
1431‧‧‧Inner wall
144‧‧‧Fourth oblique groove
1441‧‧‧inner wall
20‧‧‧Vacuum environment
21‧‧‧Vacuum tube
30‧‧‧Chip
40‧‧‧Tape
50‧‧‧ pickup head
60‧‧‧ Wafer thimble device
61‧‧‧Frame
611, 612‧‧‧ groove
62‧‧‧Intermediate platform
621‧‧‧long groove
613‧‧‧Aeration Pore
圖1：本發明之晶片頂針的第一實施例的一立體圖。 圖2：圖1之晶片頂針的一立體分解圖。 圖3：圖1之晶片頂針的一俯視平面圖。 圖4：圖1之晶片頂針設置於一真空環境的一縱向剖面圖。 圖5A至5C：圖4之晶片頂針的動作示意圖。 圖6：本發明之晶片頂針的第二實施例的一俯視平面圖。 圖7：圖6之晶片頂針設置於一真空環境的一縱向剖面圖。 圖8A至8C：圖7之晶片頂針的動作示意圖。 圖9：既有一多段式晶片頂針的一立體外觀圖。 圖10：圖9之多段式晶片頂針的一俯視平面圖。FIG. 1 is a perspective view of a first embodiment of a wafer thimble according to the present invention. FIG. 2 is an exploded perspective view of the wafer thimble of FIG. 1. FIG. 3: A top plan view of the wafer thimble of FIG. 1. FIG. FIG. 4 is a longitudinal sectional view of the wafer thimble of FIG. 1 disposed in a vacuum environment. 5A to 5C are schematic diagrams of the operation of the wafer thimble of FIG. 4. FIG. 6 is a top plan view of a second embodiment of a wafer thimble of the present invention. FIG. 7 is a longitudinal sectional view of the wafer thimble of FIG. 6 disposed in a vacuum environment. 8A to 8C are schematic diagrams of the operation of the wafer thimble of FIG. 7. FIG. 9 is a perspective view of an existing multi-segment wafer thimble. FIG. 10 is a top plan view of the multi-segment wafer thimble of FIG. 9.
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| TW107100758A TWI641070B (en) | 2018-01-09 | 2018-01-09 | Needle device for chip |
| KR1020180008173A KR102012582B1 (en) | 2018-01-09 | 2018-01-23 | Needle device for chip |
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- 2018-01-09 TW TW107100758A patent/TWI641070B/en not_active IP Right Cessation
- 2018-01-23 KR KR1020180008173A patent/KR102012582B1/en active IP Right Grant
- 2018-02-28 JP JP2018034919A patent/JP6503487B1/en not_active Expired - Fee Related
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| TWI717189B (en) * | 2020-01-13 | 2021-01-21 | 力成科技股份有限公司 | Detection device and detection method of multi-step ejector |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6503487B1 (en) | 2019-04-17 |
| JP2019121775A (en) | 2019-07-22 |
| TW201931488A (en) | 2019-08-01 |
| KR102012582B1 (en) | 2019-08-20 |
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