TWI846653B - Groove shaped device for stripping die and method for the same - Google Patents

Groove shaped device for stripping die and method for the same Download PDF

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TWI846653B
TWI846653B TW112147699A TW112147699A TWI846653B TW I846653 B TWI846653 B TW I846653B TW 112147699 A TW112147699 A TW 112147699A TW 112147699 A TW112147699 A TW 112147699A TW I846653 B TWI846653 B TW I846653B
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Taiwan
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grain
stripping
groove
target
die
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TW112147699A
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Chinese (zh)
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楊羽銘
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梭特科技股份有限公司
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Abstract

A groove shaped device for stripping die includes a main body and a vacuum device. The main body has a film stripping groove, a comb-shaped structure, a channel, and a plurality of through holes. The film stripping groove is configured on a top surface of the main body. The comb-shaped structure is disposed at a first end of the film stripping groove and includes a plurality of teeth and a plurality of recesses, and each recess is formed between two adjacent recesses. The channel is configured in the main body. The through holes are in communication with the channel respectively, and at least one through hole is in communication with the first end of the film stripping groove. The vacuum device is connected to the channel. Such that, the groove shaped device for stripping die can separate a target die from a film with a moderate manner by the film stripping groove and the comb-shaped structure as well as a negative pressure, the stress concentration cannot be happened, and the target die can avoid from damaging or the film can avoid from damaging and remaining on a surface of the target die.

Description

槽狀晶粒剝離裝置及方法Grooved die stripping device and method

本發明是涉及一種晶粒剝離裝置及方法,特別是一種槽狀晶粒剝離裝置及方法。The present invention relates to a die stripping device and method, and in particular to a groove-shaped die stripping device and method.

晶圓被切割成複數個晶粒以後,該等晶粒將會從承載膜被轉移到基板上。在轉移的過程中,首先,支撐裝置支撐承載膜的晶粒放置區;接著,在理想狀態之下,複數個頂推件從支撐裝置的內部上升至支撐裝置的外部並且透過承載膜的晶粒放置區推動目標晶粒上升,使得目標晶粒的周邊與承載膜的晶粒放置區的周邊分離,且目標晶粒的中心與承載膜的晶粒放置區的中心分離;在目標晶粒上升的過程中,目標晶粒接觸到固晶裝置,固晶裝置吸取目標晶粒;最後,該等頂推件下降至支撐裝置的內部,同時固晶裝置將目標晶粒移動至基板上。After the wafer is cut into multiple dies, the dies will be transferred from the carrier film to the substrate. During the transfer process, first, the support device supports the die placement area of the carrier film; then, under ideal conditions, multiple pushers rise from the inside of the support device to the outside of the support device and push the target die up through the die placement area of the carrier film, so that the periphery of the target die is separated from the periphery of the die placement area of the carrier film, and the center of the target die is separated from the center of the die placement area of the carrier film; during the rise of the target die, the target die contacts the die bonding device, and the die bonding device absorbs the target die; finally, the pushers descend to the inside of the support device, and the die bonding device moves the target die to the substrate.

然而,當該等頂推件透過承載膜的晶粒放置區推動目標晶粒上升時,該等頂推件的頂端較為尖銳,應力容易過度集中,導致目標晶粒破損或承載膜破損且殘留在目標晶粒的表面。However, when the pushers push the target die up through the die placement area of the carrier film, the top of the pushers is sharp and the stress is easily over-concentrated, resulting in damage to the target die or damage to the carrier film and residues on the surface of the target die.

本發明的主要目的在於提供一種槽狀晶粒剝離裝置及方法,能夠以較緩和的方式將目標晶粒與承載膜的晶粒放置區分離。The main purpose of the present invention is to provide a groove-shaped die stripping device and method, which can separate the target die from the die placement area of the carrier film in a gentle manner.

為了達成前述的目的,本發明提供一種槽狀晶粒剝離裝置,包括一本體以及一真空裝置。該本體包括一剝膜槽、一梳狀結構、一通道及複數個通孔,該剝膜槽配置於該本體的頂面,該梳狀結構設置於該剝膜槽的一第一端,並且包括複數個齒部及複數個凹槽,各該凹槽形成於相鄰的二齒部之間,該通道配置於該本體內部,該等通孔分別與該通道相通,該等通孔的至少一者與該剝膜槽的該第一端相通。該真空裝置連接該通道。In order to achieve the above-mentioned purpose, the present invention provides a groove-shaped grain stripping device, comprising a body and a vacuum device. The body comprises a film stripping groove, a comb-shaped structure, a channel and a plurality of through holes, the film stripping groove is arranged on the top surface of the body, the comb-shaped structure is arranged at a first end of the film stripping groove, and comprises a plurality of teeth and a plurality of grooves, each of which is formed between two adjacent teeth, the channel is arranged inside the body, the through holes are respectively connected to the channel, and at least one of the through holes is connected to the first end of the film stripping groove. The vacuum device is connected to the channel.

在一些實施例中,該剝膜槽的底部具有一斜坡,該斜坡從該剝膜槽的該第一端往該剝膜槽的一第二端的方向朝上延伸,且該剝膜槽的寬度大於一晶粒的寬度。In some embodiments, the bottom of the stripping groove has a slope extending upward from the first end of the stripping groove toward a second end of the stripping groove, and the width of the stripping groove is greater than the width of a die.

在一些實施例中,該斜坡為一平面。In some embodiments, the slope is a plane.

在一些實施例中,該等通孔的至少二者分別位於該等齒部的至少二者的一側。In some embodiments, at least two of the through holes are respectively located on one side of at least two of the teeth.

在一些實施例中,所述的槽狀晶粒剝離裝置進一步包括一影像擷取單元及一處理單元,該影像擷取單元配置於該本體的中心的上方並且電性連接該處理單元。In some embodiments, the grooved die stripping device further includes an image capture unit and a processing unit, wherein the image capture unit is disposed above the center of the body and is electrically connected to the processing unit.

為了達成前述的目的,本發明提供一種槽狀晶粒剝離方法,包括下列步驟:(a)將一承載膜移動至一槽狀晶粒剝離裝置的一本體上;(b)移動該本體,使得該承載膜的一晶粒放置區上的一目標晶粒的一第一端超出該本體的一梳狀結構的複數個齒部;(c)一真空裝置對該本體的一通道抽氣以產生真空並且提供一負壓,該負壓依序通過該本體的該通道、複數個通孔與該梳狀結構的複數個凹槽以吸附該承載膜的該晶粒放置區並且固定該目標晶粒,同時該承載膜的另一晶粒放置區彎折並且進入該本體的一剝膜槽中,使得該目標晶粒的該第一端脫離該承載膜的該晶粒放置區;(d)該真空裝置停止對該通道抽氣以停止提供該負壓,使得該承載膜的該另一晶粒放置區藉由大氣壓力回復原狀並且遠離該剝膜槽,且該目標晶粒的該第一端保持脫離該承載膜的該晶粒放置區;(e)重複執行步驟(b)至步驟(d),使得該目標晶粒從其第一端往其第二端的方向逐漸脫離該承載膜的該晶粒放置區;(f)當該目標晶粒的該第二端位於該等齒部的上方時,該真空裝置對該通道抽氣以產生真空並且提供該負壓,該負壓通過該通道、該等通孔的至少一者與該等凹槽以吸附該承載膜的該晶粒放置區並且固定該目標晶粒的該第二端;以及(g)移動該本體,使得該目標晶粒的該第二端超出該等齒部,同時該真空裝置停止對該通道抽氣以停止提供該負壓,使得該目標晶粒完全脫離該承載膜的該晶粒放置區。In order to achieve the above-mentioned purpose, the present invention provides a method for stripping a grooved die, comprising the following steps: (a) moving a carrier film onto a body of a grooved die stripping device; (b) moving the body so that a first end of a target die on a die placement area of the carrier film exceeds a plurality of teeth of a comb-like structure of the body; (c) a vacuum device evacuates a channel of the body to generate a vacuum and provide a negative pressure, the The negative pressure sequentially passes through the channel, the plurality of through holes and the plurality of grooves of the comb-shaped structure of the body to absorb the grain placement area of the carrier film and fix the target grain. At the same time, another grain placement area of the carrier film is bent and enters a film stripping groove of the body, so that the first end of the target grain is separated from the grain placement area of the carrier film; (d) the vacuum device stops evacuating the channel to stop providing the negative pressure, so that the carrier film The other die placement area is restored to its original state by atmospheric pressure and is away from the film stripping groove, and the first end of the target die remains away from the die placement area of the carrier film; (e) repeatedly performing steps (b) to (d) so that the target die gradually separates from the die placement area of the carrier film from its first end to its second end; (f) when the second end of the target die is located above the toothed portion, the vacuum device is applied to the channel Pumping air to generate a vacuum and provide the negative pressure, the negative pressure passes through the channel, at least one of the through holes and the grooves to adsorb the grain placement area of the carrier film and fix the second end of the target grain; and (g) moving the body so that the second end of the target grain exceeds the equal tooth portion, and at the same time the vacuum device stops pumping air to the channel to stop providing the negative pressure, so that the target grain is completely separated from the grain placement area of the carrier film.

在一些實施例中,步驟 (c)進一步包括:該承載膜的該另一晶粒放置區抵靠於該剝膜槽的底部的一斜坡上,該斜坡從該剝膜槽的該第一端往該剝膜槽的一第二端的方向朝上延伸,該剝膜槽的寬度大於一晶粒的寬度,且該承載膜的該另一晶粒放置區上的另一晶粒位於該剝膜槽中。In some embodiments, step (c) further includes: the other grain placement area of the carrier film is against a slope at the bottom of the stripping groove, the slope extends upward from the first end of the stripping groove toward a second end of the stripping groove, the width of the stripping groove is greater than the width of a grain, and the other grain on the other grain placement area of the carrier film is located in the stripping groove.

在一些實施例中,步驟(c)進一步包括:該承載膜的該另一晶粒放置區的底面平貼於該斜坡,使得該另一晶粒的底面平貼於該承載膜的該另一晶粒放置區。In some embodiments, step (c) further includes: the bottom surface of the another die placement area of the carrier film is flatly attached to the slope, so that the bottom surface of the another die is flatly attached to the another die placement area of the carrier film.

在一些實施例中,步驟(c)進一步包括:該等通孔的至少二者分別位於該等齒部的至少二者的其中之二的一側,該負壓通過該等通孔的至少二者均勻地吸附該承載膜的該晶粒放置區,使得該目標晶粒的該第一端能夠完全脫離該承載膜的該晶粒放置區。In some embodiments, step (c) further includes: at least two of the through holes are respectively located on one side of at least two of the equal tooth portions, and the negative pressure uniformly adsorbs the grain placement area of the supporting film through at least two of the through holes, so that the first end of the target grain can completely detach from the grain placement area of the supporting film.

在一些實施例中,在步驟(a)與步驟(b)之間進一步包括:步驟(h),該槽狀晶粒剝離裝置的一影像擷取單元擷取該目標晶粒的影像;該槽狀晶粒剝離裝置的一處理單元接收該目標晶粒的影像並且依據該目標晶粒的影像計算出該目標晶粒與該本體的中心的距離;以及,該處理單元依據該目標晶粒與該本體的中心的距離控制該承載膜將該目標晶粒移動至該本體的中心,使得該目標晶粒對準該剝膜槽。In some embodiments, between step (a) and step (b), further included is: step (h), an image capture unit of the grooved grain stripping device captures the image of the target grain; a processing unit of the grooved grain stripping device receives the image of the target grain and calculates the distance between the target grain and the center of the body based on the image of the target grain; and the processing unit controls the carrier film to move the target grain to the center of the body based on the distance between the target grain and the center of the body, so that the target grain is aligned with the film stripping groove.

本發明的功效在於,本發明能夠藉由剝膜槽和梳狀結構配合負壓以較緩和的方式將目標晶粒與承載膜分離,不會有應力集中的問題,避免目標晶粒破損或承載膜破損且殘留在目標晶粒的表面。The effect of the present invention is that the present invention can separate the target crystal grain from the carrier film in a relatively gentle manner by using the film stripping groove and the comb-shaped structure in combination with negative pressure, without the problem of stress concentration, thereby avoiding damage to the target crystal grain or damage to the carrier film and residues remaining on the surface of the target crystal grain.

以下配合圖式及元件符號對本發明的實施方式做更詳細的說明,俾使熟習該項技藝者在研讀本說明書後能據以實施。The following is a more detailed description of the implementation of the present invention with reference to the drawings and component symbols, so that those skilled in the art can implement the present invention accordingly after reading this specification.

圖1是本發明的槽狀晶粒剝離裝置的立體圖。圖2是本發明的槽狀晶粒剝離裝置的俯視圖。圖3是本發明的槽狀晶粒剝離裝置的剖面圖。圖4A是本發明的真空裝置20與通道13的連接關係的示意圖。圖4B是本發明的影像擷取單元30和處理單元40的連接關係的示意圖。如圖1至圖4B所示,本發明提供一種槽狀晶粒剝離裝置,包括一本體10、一真空裝置20、一影像擷取單元30以及一處理單元40。本體10包括一剝膜槽11、一梳狀結構12、一通道13及複數個通孔14。剝膜槽11配置於本體10的頂面。梳狀結構12設置於剝膜槽11的一第一端,並且複數個齒部121及複數個凹槽122,各凹槽122形成於相鄰的二齒部121之間。通道13配置於本體10內部。該等通孔14分別與通道13相通,該等通孔14的其中之三與剝膜槽11的第一端相通。真空裝置20連接通道13。影像擷取單元30配置於本體10的中心的上方並且電性連接處理單元40。Fig. 1 is a three-dimensional diagram of the groove-shaped grain stripping device of the present invention. Fig. 2 is a top view of the groove-shaped grain stripping device of the present invention. Fig. 3 is a cross-sectional view of the groove-shaped grain stripping device of the present invention. Fig. 4A is a schematic diagram of the connection relationship between the vacuum device 20 and the channel 13 of the present invention. Fig. 4B is a schematic diagram of the connection relationship between the image capture unit 30 and the processing unit 40 of the present invention. As shown in Figs. 1 to 4B, the present invention provides a groove-shaped grain stripping device, comprising a body 10, a vacuum device 20, an image capture unit 30 and a processing unit 40. The body 10 includes a film stripping groove 11, a comb-shaped structure 12, a channel 13 and a plurality of through holes 14. The stripping groove 11 is disposed on the top surface of the main body 10. The comb-shaped structure 12 is disposed at a first end of the stripping groove 11, and has a plurality of teeth 121 and a plurality of grooves 122, each groove 122 being formed between two adjacent teeth 121. The channel 13 is disposed inside the main body 10. The through holes 14 are respectively connected to the channels 13, and three of the through holes 14 are connected to the first end of the stripping groove 11. The vacuum device 20 is connected to the channel 13. The image capture unit 30 is disposed above the center of the main body 10 and is electrically connected to the processing unit 40.

圖5是本發明的槽狀晶粒剝離方法的流程圖。圖6A是本發明的槽狀晶粒剝離方法的步驟S10的俯視圖。圖6B是本發明的槽狀晶粒剝離方法的步驟S10的剖面圖。圖7A是本發明的槽狀晶粒剝離方法的步驟S20的俯視圖。圖7B是本發明的槽狀晶粒剝離方法的步驟S20的剖面圖。圖8A是本發明的槽狀晶粒剝離方法的步驟S30的俯視圖。圖8B是本發明的槽狀晶粒剝離方法的步驟S30的剖面圖。圖9是本發明的槽狀晶粒剝離方法的步驟S40的剖面圖。圖10是本發明的槽狀晶粒剝離方法的步驟S50的剖面圖。圖11是本發明的槽狀晶粒剝離方法的步驟S60的剖面圖。圖12A是本發明的槽狀晶粒剝離方法的步驟S70的俯視圖。圖12B是本發明的槽狀晶粒剝離方法的步驟S70的剖面圖。圖13A是本發明的槽狀晶粒剝離方法的步驟S80的俯視圖。圖13B是本發明的槽狀晶粒剝離方法的步驟S80的剖面圖。本發明的槽狀晶粒剝離方法包括下列步驟:Fig. 5 is a flow chart of the groove-shaped grain stripping method of the present invention. Fig. 6A is a top view of step S10 of the groove-shaped grain stripping method of the present invention. Fig. 6B is a cross-sectional view of step S10 of the groove-shaped grain stripping method of the present invention. Fig. 7A is a top view of step S20 of the groove-shaped grain stripping method of the present invention. Fig. 7B is a cross-sectional view of step S20 of the groove-shaped grain stripping method of the present invention. Fig. 8A is a top view of step S30 of the groove-shaped grain stripping method of the present invention. Fig. 8B is a cross-sectional view of step S30 of the groove-shaped grain stripping method of the present invention. Fig. 9 is a cross-sectional view of step S40 of the groove-shaped grain stripping method of the present invention. Fig. 10 is a cross-sectional view of step S50 of the groove-shaped grain stripping method of the present invention. Fig. 11 is a cross-sectional view of step S60 of the groove-shaped grain stripping method of the present invention. Fig. 12A is a top view of step S70 of the groove-shaped grain stripping method of the present invention. Fig. 12B is a cross-sectional view of step S70 of the groove-shaped grain stripping method of the present invention. Fig. 13A is a top view of step S80 of the groove-shaped grain stripping method of the present invention. Fig. 13B is a cross-sectional view of step S80 of the groove-shaped grain stripping method of the present invention. The grooved grain stripping method of the present invention comprises the following steps:

步驟S10,如圖5、圖6A及圖6B所示,將一承載膜50移動至本體10上。In step S10, as shown in FIG. 5 , FIG. 6A and FIG. 6B , a carrier film 50 is moved onto the body 10 .

步驟S20,如圖5、圖7A及圖7B所示,影像擷取單元30擷取承載膜50的一晶粒放置區51上的一目標晶粒60的影像;處理單元40(參見圖4B)接收目標晶粒60的影像並且依據目標晶粒60的影像計算出目標晶粒60與本體10的中心的距離;以及處理單元40依據目標晶粒60與本體10的中心的距離控制承載膜50將目標晶粒60移動至本體10的中心,使得目標晶粒60對準剝膜槽11。In step S20, as shown in FIG. 5 , FIG. 7A and FIG. 7B , the image capture unit 30 captures an image of a target grain 60 on a grain placement area 51 of the carrier film 50; the processing unit 40 (see FIG. 4B ) receives the image of the target grain 60 and calculates the distance between the target grain 60 and the center of the body 10 according to the image of the target grain 60; and the processing unit 40 controls the carrier film 50 to move the target grain 60 to the center of the body 10 according to the distance between the target grain 60 and the center of the body 10, so that the target grain 60 is aligned with the film stripping groove 11.

步驟S30,如圖5、圖8A及圖8B所示,移動本體10,使得目標晶粒60的一第一端超出該等齒部121。In step S30, as shown in FIG. 5 , FIG. 8A and FIG. 8B , the main body 10 is moved so that a first end of the target die 60 is beyond the tooth portion 121 .

步驟S40,如圖5及圖9所示,真空裝置20對通道13抽氣以產生真空並且提供一負壓21,負壓21依序通過通道13、該等通孔14與該等凹槽122以吸附承載膜50的晶粒放置區51並且固定目標晶粒60,同時承載膜50的另一晶粒放置區52彎折並且進入剝膜槽11中,使得目標晶粒60的第一端脫離承載膜50的晶粒放置區51。In step S40, as shown in FIG. 5 and FIG. 9, the vacuum device 20 evacuates the channel 13 to generate a vacuum and provides a negative pressure 21. The negative pressure 21 sequentially passes through the channel 13, the through holes 14 and the grooves 122 to adsorb the grain placement area 51 of the carrier film 50 and fix the target grain 60. At the same time, another grain placement area 52 of the carrier film 50 is bent and enters the film stripping groove 11, so that the first end of the target grain 60 is separated from the grain placement area 51 of the carrier film 50.

步驟S50,如圖5及圖10所示,真空裝置20停止對通道13抽氣以停止提供負壓21,使得承載膜50的另一晶粒放置區52藉由大氣壓力回復原狀並且遠離剝膜槽11,且目標晶粒60的第一端保持脫離承載膜50的晶粒放置區51。In step S50, as shown in FIG. 5 and FIG. 10, the vacuum device 20 stops evacuating the channel 13 to stop providing the negative pressure 21, so that the other die placement area 52 of the carrier film 50 is restored to its original state by the atmospheric pressure and is away from the film stripping groove 11, and the first end of the target die 60 remains away from the die placement area 51 of the carrier film 50.

步驟S60,如圖5及圖11所示,重複執行步驟S30、步驟S40和步驟S50,使得目標晶粒60從其第一端往其第二端的方向逐漸脫離承載膜50的晶粒放置區51。具體來說,以15毫秒的時間為一循環重複執行步驟S30、步驟S40和步驟S50。在每個循環中,承載膜50的移動時間為5毫秒,承載膜50的移動距離為0.2公釐,負壓21的切換時間為3毫秒。Step S60, as shown in FIG5 and FIG11, repeats step S30, step S40 and step S50, so that the target die 60 gradually leaves the die placement area 51 of the carrier film 50 from the first end to the second end. Specifically, step S30, step S40 and step S50 are repeated with a cycle of 15 milliseconds. In each cycle, the moving time of the carrier film 50 is 5 milliseconds, the moving distance of the carrier film 50 is 0.2 mm, and the switching time of the negative pressure 21 is 3 milliseconds.

步驟S70,如圖5、圖12A及圖12B所示,當目標晶粒60的第二端位於該等齒部121的上方時,真空裝置20對通道13抽氣以產生真空並且提供負壓21,負壓21通過通道13、該等通孔14的其中之三與該等凹槽122以吸附承載膜50的晶粒放置區51並且固定目標晶粒60的第二端。In step S70, as shown in FIG. 5 , FIG. 12A and FIG. 12B , when the second end of the target grain 60 is located above the tooth portions 121, the vacuum device 20 evacuates the channel 13 to generate a vacuum and provides a negative pressure 21. The negative pressure 21 passes through the channel 13, three of the through holes 14 and the grooves 122 to adsorb the grain placement area 51 of the carrier film 50 and fix the second end of the target grain 60.

步驟S80,如圖5、圖13A及圖13B所示,移動本體10,使得目標晶粒60的第二端超出該等齒部121,同時真空裝置20停止對通道13抽氣以停止提供負壓21,使得目標晶粒60完全脫離承載膜50的晶粒放置區51。In step S80, as shown in FIG. 5 , FIG. 13A and FIG. 13B , the main body 10 is moved so that the second end of the target crystal grain 60 exceeds the tooth portion 121 , and at the same time, the vacuum device 20 stops evacuating the channel 13 to stop providing the negative pressure 21 , so that the target crystal grain 60 is completely separated from the crystal grain placement area 51 of the carrier film 50 .

藉此,本發明能夠藉由剝膜槽11和梳狀結構12配合負壓21以較緩和的方式將目標晶粒60與承載膜50分離,不會有應力集中的問題,避免目標晶粒60破損或承載膜50破損且殘留在目標晶粒60的表面。Thus, the present invention can separate the target crystal grain 60 from the carrier film 50 in a gentle manner by means of the stripping groove 11 and the comb-shaped structure 12 in conjunction with the negative pressure 21, without causing stress concentration problems, thereby preventing the target crystal grain 60 from being damaged or the carrier film 50 from being damaged and remaining on the surface of the target crystal grain 60.

再者,影像擷取單元30和處理單元40的配合能夠確保目標晶粒60對準剝膜槽11,防止目標晶粒60的其中一側偏移到剝膜槽11之外,導致目標晶粒60無法從承載膜50分離。Furthermore, the cooperation between the image capture unit 30 and the processing unit 40 can ensure that the target die 60 is aligned with the film stripping groove 11, and prevent one side of the target die 60 from deviating outside the film stripping groove 11, resulting in the target die 60 being unable to be separated from the carrier film 50.

如圖1及圖3所示,在較佳實施例中,剝膜槽11的底部具有一斜坡111,斜坡111從剝膜槽11的第一端往剝膜槽11的一第二端的方向朝上延伸,且剝膜槽11的寬度大於晶粒的寬度。換句話說,剝膜槽11的第一端是斜坡111的最低點,剝膜槽11的第二端是斜坡111的最高點。步驟S40,如圖9所示,在較佳實施例中,承載膜50的另一晶粒放置區52抵靠於斜坡111上,且承載膜50的另一晶粒放置區52上的另一晶粒61位於剝膜槽11中,以防另一晶粒61被折斷。As shown in FIG. 1 and FIG. 3 , in a preferred embodiment, the bottom of the stripping groove 11 has a slope 111, and the slope 111 extends upward from a first end of the stripping groove 11 to a second end of the stripping groove 11, and the width of the stripping groove 11 is greater than the width of the die. In other words, the first end of the stripping groove 11 is the lowest point of the slope 111, and the second end of the stripping groove 11 is the highest point of the slope 111. Step S40, as shown in FIG. 9 , in a preferred embodiment, another die placement area 52 of the carrier film 50 abuts against the slope 111, and another die 61 on another die placement area 52 of the carrier film 50 is located in the stripping groove 11 to prevent the other die 61 from being broken.

較佳地,剝膜槽11的寬度比晶粒的寬度大約240~260 ,此寬度差的範圍差更能夠保證另一晶粒61不會被折斷。其中上述寬度差以250 為較佳。 Preferably, the width of the stripping groove 11 is about 240 to 260 mm greater than the width of the die. The width difference is within a range that can better ensure that the other die 61 will not be broken. is better.

較佳地,斜坡111為一平面。換句話說,斜坡111並沒有任何凸起。步驟S40進一步包括:承載膜50的另一晶粒放置區52的底面平貼於斜坡111,使得另一晶粒61的底面平貼於承載膜50的另一晶粒放置區52。Preferably, the slope 111 is a plane. In other words, the slope 111 does not have any protrusions. Step S40 further includes: the bottom surface of another die placement area 52 of the carrier film 50 is flatly attached to the slope 111, so that the bottom surface of another die 61 is flatly attached to the other die placement area 52 of the carrier film 50.

如圖1、圖2及圖3所示,在較佳實施例中,該等通孔14的其中之三分別位於該等齒部121的其中之三的一側。如圖9所示,在較佳實施例中,步驟S40進一步包括:負壓21通過該等通孔14的其中之三均勻地吸附承載膜50的晶粒放置區51,使得目標晶粒60的第一端能夠完全脫離承載膜50的晶粒放置區51。更清楚地說,承載膜50的另一晶粒放置區52的彎折面相當平順,並沒有出現高低起伏的落差,因而目標晶粒60的第一端能夠完全脫離承載膜50的晶粒放置區51,並不會發生目標晶粒60的第一端只有一部分脫離承載膜50的晶粒放置區51,但目標晶粒60的第一端的另一部分仍附著於承載膜50的晶粒放置區51的問題。As shown in Fig. 1, Fig. 2 and Fig. 3, in a preferred embodiment, three of the through holes 14 are respectively located on one side of three of the teeth 121. As shown in Fig. 9, in a preferred embodiment, step S40 further includes: negative pressure 21 passes through three of the through holes 14 to uniformly absorb the die placement area 51 of the carrier film 50, so that the first end of the target die 60 can completely separate from the die placement area 51 of the carrier film 50. To be more clear, the bending surface of the other die placement area 52 of the carrier film 50 is quite smooth without any ups and downs, so the first end of the target die 60 can completely break away from the die placement area 51 of the carrier film 50, and there will not be a problem that only a portion of the first end of the target die 60 breaks away from the die placement area 51 of the carrier film 50, but the other portion of the first end of the target die 60 is still attached to the die placement area 51 of the carrier film 50.

以上所述者僅為用以解釋本發明的較佳實施例,並非企圖據以對本發明做任何形式上的限制,是以,凡有在相同的發明精神下所作有關本發明的任何修飾或變更,皆仍應包括在本發明意圖保護的範疇。The above is only used to explain the preferred embodiments of the present invention, and is not intended to limit the present invention in any form. Therefore, any modifications or changes made to the present invention under the same spirit of the invention should still be included in the scope of protection of the present invention.

10:本體 11:剝膜槽 111:斜坡 12:梳狀結構 121:齒部 122:凹槽 13:通道 14:通孔 20:真空裝置 21:負壓 30:影像擷取單元 40:處理單元 50:承載膜 51:晶粒放置區 52:另一晶粒放置區 60:目標晶粒 61:另一晶粒 S10~S80:步驟 10: body 11: film stripping groove 111: slope 12: comb-like structure 121: teeth 122: groove 13: channel 14: through hole 20: vacuum device 21: negative pressure 30: image capture unit 40: processing unit 50: carrier film 51: die placement area 52: another die placement area 60: target die 61: another die S10~S80: steps

圖1是本發明的槽狀晶粒剝離裝置的立體圖。 圖2是本發明的槽狀晶粒剝離裝置的俯視圖。 圖3是本發明的槽狀晶粒剝離裝置的剖面圖。 圖4A是本發明的真空裝置與通道的連接關係的示意圖。 圖4B是本發明的影像擷取單元和處理單元的連接關係的示意圖。 圖5是本發明的槽狀晶粒剝離方法的流程圖。 圖6A是本發明的槽狀晶粒剝離方法的步驟S10的俯視圖。 圖6B是本發明的槽狀晶粒剝離方法的步驟S10的剖面圖。 圖7A是本發明的槽狀晶粒剝離方法的步驟S20的俯視圖。 圖7B是本發明的槽狀晶粒剝離方法的步驟S20的剖面圖。 圖8A是本發明的槽狀晶粒剝離方法的步驟S30的俯視圖。 圖8B是本發明的槽狀晶粒剝離方法的步驟S30的剖面圖。 圖9是本發明的槽狀晶粒剝離方法的步驟S40的剖面圖。 圖10是本發明的槽狀晶粒剝離方法的步驟S50的剖面圖。 圖11是本發明的槽狀晶粒剝離方法的步驟S60的剖面圖。 圖12A是本發明的槽狀晶粒剝離方法的步驟S70的俯視圖。 圖12B是本發明的槽狀晶粒剝離方法的步驟S70的剖面圖。 圖13A是本發明的槽狀晶粒剝離方法的步驟S80的俯視圖。 圖13B是本發明的槽狀晶粒剝離方法的步驟S80的剖面圖。 FIG. 1 is a perspective view of the groove-shaped grain stripping device of the present invention. FIG. 2 is a top view of the groove-shaped grain stripping device of the present invention. FIG. 3 is a cross-sectional view of the groove-shaped grain stripping device of the present invention. FIG. 4A is a schematic diagram of the connection relationship between the vacuum device and the channel of the present invention. FIG. 4B is a schematic diagram of the connection relationship between the image capture unit and the processing unit of the present invention. FIG. 5 is a flow chart of the groove-shaped grain stripping method of the present invention. FIG. 6A is a top view of step S10 of the groove-shaped grain stripping method of the present invention. FIG. 6B is a cross-sectional view of step S10 of the groove-shaped grain stripping method of the present invention. FIG. 7A is a top view of step S20 of the groove-shaped grain stripping method of the present invention. FIG. 7B is a cross-sectional view of step S20 of the groove-shaped grain stripping method of the present invention. FIG. 8A is a top view of step S30 of the groove-shaped grain stripping method of the present invention. FIG. 8B is a cross-sectional view of step S30 of the groove-shaped grain stripping method of the present invention. FIG. 9 is a cross-sectional view of step S40 of the groove-shaped grain stripping method of the present invention. FIG. 10 is a cross-sectional view of step S50 of the groove-shaped grain stripping method of the present invention. FIG. 11 is a cross-sectional view of step S60 of the groove-shaped grain stripping method of the present invention. FIG. 12A is a top view of step S70 of the groove-shaped grain stripping method of the present invention. FIG. 12B is a cross-sectional view of step S70 of the groove-shaped grain stripping method of the present invention. FIG. 13A is a top view of step S80 of the groove-shaped grain stripping method of the present invention. FIG. 13B is a cross-sectional view of step S80 of the groove-shaped grain stripping method of the present invention.

10:本體 10: Body

11:剝膜槽 11: Stripping groove

111:斜坡 111: Slope

12:梳狀結構 12: Comb structure

121:齒部 121: Teeth

122:凹槽 122: Groove

14:通孔 14:Through hole

Claims (10)

一種槽狀晶粒剝離裝置,包括: 一本體,包括一剝膜槽、一梳狀結構、一通道及複數個通孔,該剝膜槽配置於該本體的頂面,該梳狀結構設置於該剝膜槽的一第一端,並且包括複數個齒部及複數個凹槽,各該凹槽形成於相鄰的二齒部之間,該通道配置於該本體內部,該等通孔分別與該通道相通,該等通孔的至少一者與該剝膜槽的該第一端相通;以及 一真空裝置,連接該通道。 A groove-shaped grain stripping device comprises: a body, comprising a stripping groove, a comb-shaped structure, a channel and a plurality of through holes, wherein the stripping groove is arranged on the top surface of the body, the comb-shaped structure is arranged at a first end of the stripping groove and comprises a plurality of teeth and a plurality of grooves, each of which is formed between two adjacent teeth, the channel is arranged inside the body, the through holes are respectively connected to the channel, and at least one of the through holes is connected to the first end of the stripping groove; and a vacuum device connected to the channel. 如請求項1所述的槽狀晶粒剝離裝置,其中,該剝膜槽的底部具有一斜坡,該斜坡從該剝膜槽的該第一端往該剝膜槽的一第二端的方向朝上延伸,且該剝膜槽的寬度大於一晶粒的寬度。A groove-shaped chip stripping device as described in claim 1, wherein the bottom of the stripping groove has a slope, the slope extends upward from the first end of the stripping groove toward a second end of the stripping groove, and the width of the stripping groove is greater than the width of a chip. 如請求項2所述的槽狀晶粒剝離裝置,其中,該斜坡為一平面。A groove-shaped die stripping device as described in claim 2, wherein the slope is a plane. 如請求項1所述的槽狀晶粒剝離裝置,其中,該等通孔的至少二者分別位於該等齒部的至少二者的一側。A groove-shaped die stripping device as described in claim 1, wherein at least two of the through holes are respectively located on one side of at least two of the equal tooth portions. 如請求項1所述的槽狀晶粒剝離裝置,進一步包括一影像擷取單元及一處理單元,該影像擷取單元配置於該本體的中心的上方並且電性連接該處理單元。The grooved die stripping device as described in claim 1 further includes an image capture unit and a processing unit, wherein the image capture unit is disposed above the center of the main body and is electrically connected to the processing unit. 一種槽狀晶粒剝離方法,包括下列步驟: (a)將一承載膜移動至一槽狀晶粒剝離裝置的一本體上; (b)移動該本體,使得該承載膜的一晶粒放置區上的一目標晶粒的一第一端超出該本體的一梳狀結構的複數個齒部; (c)一真空裝置對該本體的一通道抽氣以產生真空並且提供一負壓,該負壓依序通過該本體的該通道、複數個通孔與該梳狀結構的複數個凹槽以吸附該承載膜的該晶粒放置區並且固定該目標晶粒,同時該承載膜的另一晶粒放置區彎折並且進入該本體的一剝膜槽中,使得該目標晶粒的該第一端脫離該承載膜的該晶粒放置區; (d)該真空裝置停止對該通道抽氣以停止提供該負壓,使得該承載膜的該另一晶粒放置區藉由大氣壓力回復原狀並且遠離該剝膜槽,且該目標晶粒的該第一端保持脫離該承載膜的該晶粒放置區; (e)重複執行步驟(b)至步驟(d),使得該目標晶粒從其第一端往其第二端的方向逐漸脫離該承載膜的該晶粒放置區; (f)當該目標晶粒的該第二端位於該等齒部的上方時,該真空裝置對該通道抽氣以產生真空並且提供該負壓,該負壓通過該通道、該等通孔的至少一者與該等凹槽以吸附該承載膜的該晶粒放置區並且固定該目標晶粒的該第二端;以及 (g)移動該本體,使得該目標晶粒的該第二端超出該等齒部,同時該真空裝置停止對該通道抽氣以停止提供該負壓,使得該目標晶粒完全脫離該承載膜的該晶粒放置區。 A method for stripping a grooved grain comprises the following steps: (a) moving a carrier film onto a body of a grooved grain stripping device; (b) moving the body so that a first end of a target grain on a grain placement area of the carrier film exceeds a plurality of teeth of a comb-shaped structure of the body; (c) a vacuum device evacuates a channel of the body to generate a vacuum and provide a negative pressure, the negative pressure sequentially passes through the channel of the body, a plurality of through holes and a plurality of grooves of the comb-shaped structure to adsorb the grain placement area of the carrier film and fix the target grain, while another grain placement area of the carrier film is bent and enters a film stripping groove of the body, so that the first end of the target grain is separated from the grain placement area of the carrier film; (d) The vacuum device stops evacuating the channel to stop providing the negative pressure, so that the other die placement area of the carrier film is restored to its original state by atmospheric pressure and is away from the film stripping groove, and the first end of the target die remains separated from the die placement area of the carrier film; (e) Repeating steps (b) to (d), the target die gradually separates from the die placement area of the carrier film from its first end to its second end; (f) When the second end of the target crystal grain is located above the toothed portion, the vacuum device evacuates the channel to generate a vacuum and provides the negative pressure, and the negative pressure passes through the channel, at least one of the through holes and the grooves to adsorb the crystal grain placement area of the carrier film and fix the second end of the target crystal grain; and (g) Move the body so that the second end of the target crystal grain exceeds the toothed portion, and at the same time, the vacuum device stops evacuating the channel to stop providing the negative pressure, so that the target crystal grain completely leaves the crystal grain placement area of the carrier film. 如請求項6所述的槽狀晶粒剝離方法,其中,步驟 (c)進一步包括:該承載膜的該另一晶粒放置區抵靠於該剝膜槽的底部的一斜坡上,該斜坡從該剝膜槽的該第一端往該剝膜槽的一第二端的方向朝上延伸,該剝膜槽的寬度大於一晶粒的寬度,且該承載膜的該另一晶粒放置區上的另一晶粒位於該剝膜槽中。A groove-shaped grain stripping method as described in claim 6, wherein step (c) further includes: the other grain placement area of the carrier film abuts against a slope at the bottom of the stripping groove, the slope extends upward from the first end of the stripping groove toward a second end of the stripping groove, the width of the stripping groove is greater than the width of a grain, and the other grain on the other grain placement area of the carrier film is located in the stripping groove. 如請求項7所述的槽狀晶粒剝離方法,其中,步驟(c)進一步包括:該承載膜的該另一晶粒放置區的底面平貼於該斜坡,使得該另一晶粒的底面平貼於該承載膜的該另一晶粒放置區。The grooved die stripping method as described in claim 7, wherein step (c) further includes: the bottom surface of the other die placement area of the carrier film is flat against the slope, so that the bottom surface of the other die is flat against the other die placement area of the carrier film. 如請求項6所述的槽狀晶粒剝離方法,其中,步驟(c)進一步包括:該等通孔的至少二者分別位於該等齒部的至少二者的其中之二的一側,該負壓通過該等通孔的至少二者均勻地吸附該承載膜的該晶粒放置區,使得該目標晶粒的該第一端能夠完全脫離該承載膜的該晶粒放置區。A groove-shaped grain stripping method as described in claim 6, wherein step (c) further includes: at least two of the through holes are respectively located on one side of at least two of the equal tooth portions, and the negative pressure passes through at least two of the through holes to uniformly adsorb the grain placement area of the supporting film, so that the first end of the target grain can be completely separated from the grain placement area of the supporting film. 如請求項6所述的槽狀晶粒剝離方法,其中,在步驟(a)與步驟(b)之間進一步包括:步驟(h),該槽狀晶粒剝離裝置的一影像擷取單元擷取該目標晶粒的影像;該槽狀晶粒剝離裝置的一處理單元接收該目標晶粒的影像並且依據該目標晶粒的影像計算出該目標晶粒與該本體的中心的距離;以及,該處理單元依據該目標晶粒與該本體的中心的距離控制該承載膜將該目標晶粒移動至該本體的中心,使得該目標晶粒對準該剝膜槽。A grooved grain stripping method as described in claim 6, further comprising between step (a) and step (b): step (h), wherein an image capture unit of the grooved grain stripping device captures the image of the target grain; a processing unit of the grooved grain stripping device receives the image of the target grain and calculates the distance between the target grain and the center of the body based on the image of the target grain; and the processing unit controls the carrier film to move the target grain to the center of the body based on the distance between the target grain and the center of the body, so that the target grain is aligned with the film stripping groove.
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201017777A (en) * 2008-10-23 2010-05-01 Gallant Prec Machining Co Ltd Seperation method for a chip from tape film and a chip pickup method
TW202247300A (en) * 2021-05-17 2022-12-01 梭特科技股份有限公司 Hybrid bond method for fixing dies

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201017777A (en) * 2008-10-23 2010-05-01 Gallant Prec Machining Co Ltd Seperation method for a chip from tape film and a chip pickup method
TW202247300A (en) * 2021-05-17 2022-12-01 梭特科技股份有限公司 Hybrid bond method for fixing dies

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