TWI427691B - Manufacturing method of semiconductor device - Google Patents

Description

Semiconductor device manufacturing method

BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a method of fabricating a semiconductor device for picking up a semiconductor wafer with a wafer processing tape held during self-cutting.

In the manufacturing process of a semiconductor device such as an IC, a semiconductor processing wafer is cut (cut) after attaching a semiconductor processing tape having adhesiveness and elasticity to the back surface of a semiconductor wafer on which a circuit pattern is formed. a step of a wafer unit; a step of picking up the cut wafer; and attaching the picked wafer to a lead frame or a package substrate, or the like, or stacking the semiconductor wafers with each other in a stacked package, followed by die bonding ( installation steps.

As the wafer processing tape used in the manufacturing process of the semiconductor device, a dicing-mulet film in which an adhesive tape and a thermosetting adhesive containing an epoxy resin component are laminated is used.

The adhesive tape is used for fixing the wafer so that the wafer cut in the step of cutting the semiconductor wafer does not scatter, and thus has high adhesion of the fixed wafer, but in the step of picking each wafer, it is necessary to adhere to the wafer. The tape is peeled off from the wafer to which the adhesive layer is attached.

Therefore, in the state in which the wafer processing is carried in the radial direction and the circumferential direction of the wafer, the circumference of the wafer is held by the expansion ring, and one side of the wafer to be picked up in this state is used. The back surface of the adhesive tape is adsorbed by the adsorption stage, and is lifted up by a liftable needle to peel off and pick up between the adhesive tape and the adhesive layer (for example, refer to Patent Document 1).

Moreover, by sucking the back surface of the adhesive tape on the upper side of the suction piece, the plurality of upper top blocks protruding from the upper surface of the suction block and disposed on the concentric circles are only pushed up and loaded by the wafer. And the wafer is sucked upward by the suction chuck from above, and the inner block is slowly raised in such a manner that the top block is in the most prominent state on the final center, thereby performing stripping of the wafer processing tape (for example, refer to the patent document) 2).

Patent Document 1: WO2006/104151 Manual

Patent Document 2: Japanese Laid-Open Patent Publication No. 2005-117019

However, in the picking method disclosed in Patent Document 1, there is a problem in that the dust D of the adhesive layer T3 which is generated in the step of cutting the wafer adheres in a state of being separated from the adhesive layer T2 and the adhesive layer T3 which should be separated. , resulting in poor pickup.

The pick-up method disclosed in Patent Document 2 improves the pick-up failure caused by the pick-up method of Patent Document 1, but there is a tendency that the adhesive layer T3 for the wafer processing tape T softens according to the requirement of the delamination of the wafer W1. As a result, there is a problem that in the step of cutting the wafer, the dust D of the adhesive layer T3 is easily scattered to the surroundings, so that the success rate of pickup is lowered.

It is an object of the present invention to facilitate the stripping of a semiconductor wafer from a wafer processing tape.

The inventors of the present invention have conducted intensive studies to solve the above problems, and as a result, have focused on pressing all of the area surrounding the semiconductor wafer from the back side of the wafer processing tape before the wafer processing tape is picked up. portion. It was found that by performing this pressing, the dust adhering to each portion was easily peeled off.

That is, the present invention seeks to solve the problem of the present invention by the following:

(1) A method of manufacturing a semiconductor device, comprising the steps of: dicing the semiconductor wafer after the wafer processing tape is diced, dividing the semiconductor wafer into a plurality of semiconductor wafers; and attaching the semiconductor wafer to the semiconductor wafer The semiconductor wafer to be peeled off among the plurality of semiconductor wafers in the wafer processing tape is picked up from the wafer processing tape; and the region of the semiconductor wafer surrounded by the dicing groove is removed from the back surface of the wafer processing tape After the side is pressed against the whole or a part thereof, the semiconductor wafer is picked up from the wafer processing tape;

(2) The method of manufacturing a semiconductor device according to claim 1, wherein the pressing of the region of the dicing groove surrounding the semiconductor wafer is performed by a frame along a shape of the region;

(3) The method of manufacturing a semiconductor device according to claim 1, wherein the pressing of the region of the dicing trench surrounding the semiconductor wafer is performed by a plurality of pins disposed along the region;

(4) The method of manufacturing a semiconductor device according to any one of claims 1 to 3, wherein the pressing of the region of the dicing groove surrounding the semiconductor wafer is performed in units of a plurality of semiconductor wafers.

In addition, the above-mentioned "region of the semiconductor wafer to which the dicing groove is to be detached" does not mean a region surrounded by the dicing groove, but a dicing groove in which the entire dicing groove of the entire wafer surrounds the semiconductor wafer to be detached. Part of it.

According to the invention of the present invention, all or part of the cutting grooves around the semiconductor wafer are pressed from the side of the wafer processing belt before the semiconductor wafer is peeled off from the wafer processing belt, whereby the dust adhering to each portion is easily peeled off. As a result, the obstruction caused by the dust at the time of picking up the semiconductor wafer for the wafer processing belt is suppressed, and the success rate of the pickup operation is improved.

A method of manufacturing a semiconductor device according to an embodiment of the present invention will be described with reference to Figs. 1 to 8B.

In this embodiment, in the following step, the back surface of the semiconductor wafer (the surface opposite to the surface on which the integrated circuit is formed) is bonded to the dicing-mud film of the wafer processing tape and is diced. The semiconductor wafer is then individually picked up and the steps are mainly explained.

[Cut-mud film]

Before describing a method of manufacturing a semiconductor device, first, the configuration of the dicing die-bonding film 10 will be described. Fig. 1 is a view showing a state in which a semiconductor wafer and a ring frame for dicing are bonded to a dicing die-bonding film.

The dicing-mud film 10 is formed by laminating an intermediate resin layer 2 on a base film 1, onto which an adhesive layer 3 is laminated, and an adhesive layer 4 is laminated thereon, and at the time of cutting, at the adhesive layer 4 A semiconductor wafer 11 is mounted thereon. In addition, in FIG. 1, each structure of the dicing-mud film 10 is shown by the thickness larger than actual for convenience of description.

As the base film 1, a plastic, a rubber or the like which is known as a dicing-mulet film can be used. Here, a thermoplastic plastic film can be used as the base film.

Further, the base film 1 preferably has radioelasticity, and in particular, when a radiation curable adhesive is used for the adhesive layer, it is preferable to select a radiation transmittance at a wavelength at which the adhesive hardens. The thickness of the base film is usually preferably from 30 to 300 μm from the viewpoint of self-stretching properties and radiation transmittance.

The intermediate resin layer 2 is not particularly limited as long as it is harder than the adhesive layer 3. In order to suppress cracking and chipping (peeling) of the wafer at the time of cutting, the intermediate resin layer 2 is used to have an appropriate modulus of elasticity. The intermediate resin layer 2 is provided by applying a mixture containing an adhesive component and a hardening component to a base film and then hardening it. As the adhesive component, various general-purpose adhesives, such as an acrylic type, a polyester type, an amine type, a polyoxyl system, and a natural rubber type, can be used. The curing agent is selected from the group consisting of polyisocyanates, melamine-formaldehyde resins, and epoxy resins, and may be used singly or in combination of two or more.

Further, by making the intermediate resin layer 2 have radiation curability, the intermediate resin layer 2 can be hardened and shrunk by radiation hardening after dicing, thereby improving the pick-up property of the wafer.

It is preferable that the intermediate resin layer 2 has a thickness of at least 5 μm, more preferably 10 μm or more.

The adhesive layer 3 is not particularly limited as long as it has such a property that it does not cause defects such as scattering of the wafer of the adhesive layer 4 at the time of dicing, and is easily peeled off from the adhesive layer 4 at the time of pick-up. In order to improve the pick-up property after dicing, the adhesive layer 3 is preferably a radiation curable one, and more preferably a material which is easily peeled off from the adhesive layer 4 in the dicing-mulet film. As the adhesive layer 3, for example, a compound having a radiation-curable carbon-carbon double bond having an iodine value of 0.5 to 20 in the molecule, and an acrylic adhesive selected from a compound of a polyisocyanate, a melamine-formaldehyde resin, and an epoxy resin can be used. Agent.

The adhesive layer 3 can be formed by applying an adhesive to the intermediate resin layer formed on the base film in the same manner as a normal dicing tape. The application of the adhesive can be carried out after the application of the intermediate resin layer. When the intermediate resin layer is adjusted to store the elastic modulus by radiation, it is necessary to apply the film after the intermediate resin layer is cured by radiation.

The adhesive layer 4 is obtained by bonding a semiconductor wafer or the like and dicing it, and then picking up the wafer, peeling off the adhesive layer 3 and adhering it to the wafer, and using it as an adhesive for fixing the wafer to the substrate or the lead frame. The coating layer 4 is not particularly limited as long as it is a film-like adhesive generally used in a dicing-mulet film, and for example, a known polyimine resin or a polyamide resin used for an adhesive can be used. Polyether phthalimide resin, polyamidimide resin, polyester resin, polyester phthalimide resin, phenoxy resin, polyfluorene resin, polyether oxime resin, polyphenylene sulfide resin, poly An ether ketone resin, a chlorinated polypropylene resin, an acrylic resin, a polyurethane resin, an epoxy resin, a polypropylene guanamine resin, a melamine resin, or the like, or a mixture thereof. Further, in order to reinforce the adhesion to the wafer or the lead frame, it is desirable to add a decane coupling agent or a titanium coupling agent as an additive to the above materials or a mixture thereof. Further, a chelate-modified epoxy resin may be used in part or all of the epoxy resin. The thickness can be appropriately set, and is preferably about 5 to 100 μm.

[pre-step]

Hereinafter, a method of manufacturing a semiconductor device will be described in order.

First, an integrated circuit is formed on the main surface of the semiconductor wafer 11 composed of a single crystal germanium according to a well-known manufacturing process, and then the back surface of the semiconductor wafer 11 is polished by a grinder, and the damaged layer is removed by etching. It is as thin as about 20 μm to 50 μm, for example.

[Cutting step]

Fig. 2 is an explanatory view showing a cutting step. At the time of dicing, the dicing die-bonding film 10 is attached in advance to the back surface of the semiconductor wafer 11 (the surface opposite to the surface on which the integrated circuit is formed). Further, the outer periphery of the dicing die-bonding film 10 is fixed by the annular frame 5, thereby preventing the dicing-mud film 10 from being bent.

Then, in a state where the back surface of the dicing die-bonding film 10 (opposite side of the semiconductor wafer 13) is adsorbed on the upper surface of the adsorption stage 14, the upper surface of the semiconductor wafer 11 is cut by the dicing blade 12, and is divided into lattices. A plurality of rectangular semiconductor wafers 13 are arranged in a shape. At this time, the dicing-mud film 10 is cut only by about one-half of the thickness direction thereof, and the arrangement state of the divided semiconductor wafers 13 is maintained.

In addition, in FIG. 2, the respective structures of the dicing die-bonding film 10 and the semiconductor wafer 13 are shown in a larger than actual thickness for convenience of explanation, and the number of individual semiconductor wafers 13 is also less than actual. Simplified by the illustration.

[radiation irradiation step]

When the intermediate resin layer 2 or the adhesive layer 3 is used for radiation curability, as shown in FIG. 3, radiation is irradiated from the back side of the dicing-mud film 10.

Thereby, the curing of the intermediate resin layer 2 or the adhesion of the adhesive layer 3 is lowered, and the peelability of the semiconductor wafer 13 is improved.

[Cut-adhesive film setting steps]

Next, the expansion ring 8 is attached so as to penetrate the inner side of the annular frame 5 from the back side of the dicing-mud film 10 (see FIG. 9). Thereby, the dicing-bonding film 10 is subjected to tension in the radial direction centering on the wafer mounting position, and is stretched without looseness in the horizontal direction.

[Pressure step of semiconductor wafer]

Each of the semiconductor wafers 13 on the dicing-mud film 10 is subjected to a pressing operation one by one from the back side thereof via the dicing die-bonding film 10 before picking up.

The pressing operation of each of the semiconductor wafers 13 is performed by the pickup device 20 of the semiconductor wafer 13.

4 is a partial cross-sectional view showing a main part of the pickup device 20. The pick-up device 20 includes a suction table 21 on which an infinite number of suction ports 21a are formed, and a cutting-mud film 10 placed thereon is sucked; a vacuum chamber (not shown) is used for suction Vacuum suction is performed directly under the table 21, and suction is performed downward from the suction port 21a; the head 22 can be moved in any position on the horizontal surface in the vacuum chamber; the first and second pressing members 25, 26, which is carried on the head 22, and has needles 23, 24 for pressing the dicing-mud film 10 from below; and an adsorption chuck 27 which adsorbs and picks up the respective semiconductor wafers 13 from above.

The suction table 21 is disposed above the vacuum chamber in a state of being horizontal, and is suctioned downward from the innumerable suction ports 21a formed in the suction table 21 by vacuum suctioning the vacuum chamber. Thereby, the adsorption holding of the dicing-mud film 10 placed on the suction table 21 can be achieved. The dicing-mud film 10 is such that the bonding surface of the semiconductor wafer 13 faces upward, and the back surface side faces downward and is placed on the upper surface of the suction table 21.

The suction chuck 27 is attached to a head (not shown) so as to be movable up and down, and is positioned above the suction table 21 so as to be positioned at an arbitrary position on the horizontal surface, and is moved up and down by an actuator. The adsorption chuck 27 is connected to a negative pressure source, and the adsorption port at the lower end portion (not shown) is adsorbed on the upper surface of the semiconductor wafer 13 and stretched upward, whereby the semiconductor wafer 13 is peeled off from the dicing-mud film 10 and Pick up.

The first pressing member 25 is positioned at the same position as the suction chuck 27 by the head 22 that can be arbitrarily moved by the X-axis and Y-axis servo motors, and is provided by an actuator (not shown). Ascending, the semiconductor wafer 13 is pressed from below via the dicing-mulet film 10 to promote peeling of the semiconductor wafer 13. 5 is a plan view showing the arrangement of the needle 23 in the first pressing member 25 as viewed from above, and as shown, the first pressing member 25 is provided in a range further inside than the outer edge portion of the semiconductor wafer 13. The 20 needles 23 that are abutted (not shown in FIG. 4 and are less shown) are pressed against the semiconductor wafer 13 to be picked up from below by the dicing die-bonding film 10. Since the dicing-mud film 10 is entirely adsorbed to the adsorption stage 21, if only one semiconductor wafer 13 is pressed from below, the peripheral portion of the semiconductor wafer 13 of the dicing-mud film 10 is subjected to tension underneath, and thus slowly Promote stripping, resulting in easy and smooth stripping.

Further, each of the pressing members 25 and 26 presses the back side of the dicing die-bonding film by the needles 23 and 24, and at this time, the needles are used by the numerous adsorption ports 21a formed in the adsorption stage 21. 23, 24 are inserted into the respective adsorption ports 21a to press the cut-mud film 10 on the upper side thereof. Further, each of the adsorption ports 21a is shown less in FIG. 4, and actually more of the adsorption ports 21a are formed corresponding to the width of the semiconductor wafer 13. Therefore, a suitable adsorption port 21a can be utilized in the case of pressing any position of the dicing-mud film 10.

Unlike the first pressing member 25, the second pressing member 26 does not operate simultaneously with the chucking chuck 27, but is performed earlier than the picking up of the semiconductor wafer 13 to remove dust during cutting that hinders peeling of the semiconductor wafer 13. .

The second pressing member 26 is positioned directly below the target semiconductor wafer 13 by the head 22, and is lifted by an actuator (not shown), and pressed against the dicing film 10 from below. Semiconductor wafer 13.

The second pressing member 26 also holds the four pins 24 facing upward, and presses the target semiconductor wafer 13 at a specific position from below. Fig. 6 is a plan view showing a position at which the four pins 24 press the rectangular semiconductor wafer 13 against which the object is pressed. As shown in the figure, each of the pins 24 is disposed to press against the position of the four intersections of the cutting grooves M surrounding the semiconductor wafer 13 against which the object is pressed. Moreover, FIG. 7 is an operation explanatory view showing a state in which the pressing member 22 is raised, and each of the needles 24 can press the cutting-mud film 10 on the upper surface of the table through the suction port 21a of the suction table 21.

8A is an enlarged cross-sectional view showing a state before the semiconductor wafer 13 is pressed by the respective pins 24 by the second pressing member 26, and FIG. 8B is an enlarged cross-sectional view showing a state in which the semiconductor wafer 13 is pressed.

In the dicing groove M, dust D is generated from each layer of the dicing-mud film 10 by cutting, and adheres to the groove. Among them, in the case where the dust D of the adhesive layer 3 (and further the adhesive layer 2) is adhered across the adhesive layer 2 and the adhesive layer 3 in the groove, the pickup of the semiconductor wafer 13 is hindered.

Therefore, four pins 24 are pressed against the cutting grooves around the target semiconductor wafer 13 before the pick-up, and in the embodiment, four of the cutting grooves M which are the four sides of the semiconductor wafer 13 surrounding the rectangular shape. At the vertex position, the dust D is given an impact of the pressing force or the vibration generated by the pressing.

Further, the positioning of the second pressing member 26 is performed such that the center position of each of the round pins 24 coincides with the center position of each intersection of the cutting grooves M.

Further, the dimensions of the respective portions are exemplified, and one side of the semiconductor wafer 13 is 10 to 16 [mm], the diameter of the needle 24 is 200 to 350 [μm], and the width of the dicing groove is 50 [μm], and the dicing-mud film is cut. The push of 10 on each of the needles 24 is about 10 [μm].

Thereby, as shown in FIG. 8B, the adhered dust D can be shaken off or the dust D which crosses the adhesive layer 2 and the adhesive layer 3 can be broken.

Further, since the first pressing member 25 and the second pressing member 26 use the actuator of the same specification as the driving source for the vertical movement, the moving speed of the pressing force of each of the pins 24 and the peeling timing of the semiconductor wafer 23 The rate of rise when pressing the back side of the cut-mud film is the same.

The pressing force for removing the dust D can press the entire periphery of the semiconductor wafer 13 along the cutting groove M, or can be locally pressed as the pressing member 26. The second pressing member 26 is pressed against the intersection of the lateral cutting groove M and the longitudinal cutting groove M, and the intersection of the cutting groove M is likely to generate generation and adhesion of the dust D, which is more effective by pressing the point. The attachment is removed.

Moreover, the outer diameter of each of the pins 24 of the second pressing member 26 is larger than the width of the cutting groove M, and is also contained at the outer edge of the semiconductor wafer 13 during pressing, so that the cutting groove M and the semiconductor wafer can be thus 13 The outer edge is pressed. Further, it is also possible to press only the cutting groove M with a narrow width so as not to overlap the semiconductor wafer 13.

When the four points around the semiconductor wafer 13 are pressed by the second pressing member 26, the head 22 positions the first pressing member 25 on the same semiconductor wafer 13 while positioning the adsorption chuck 27 at Immediately above the same semiconductor wafer 13, the chuck 13 is lowered to adsorb the semiconductor wafer 13. Then, the chuck 13 is raised, and the first pressing member 25 is raised to press the semiconductor wafer 13 from below. Since the dust D in the cutting groove M is removed by the pressing of the second pressing member 26 or separated from the state of the boundary between the adhesive layer 4 and the adhesive layer 3, the semiconductor wafer 13 serves as a boundary line for peeling off. The boundary surface between the adhesive layer 3 and the adhesive layer 4 of K (refer to FIG. 8B) is favorably peeled off, so that the semiconductor wafer 13 is picked up by the adsorption chuck 27.

Here, an example of the operation of pressing and picking up the second pressing member 25 for removing dust from one semiconductor wafer 13 is exemplified here, but is not limited thereto, and for example, for all the semiconductor wafers 13 After the pressing of the second pressing member 25 for removing the dust is completed, the pickup of each of the semiconductor wafers 13 is performed.

[Substrate assembly step]

The picked semiconductor wafer 13 is transferred to the substrate assembly step, and is mounted on the wiring substrate via an adhesive or the like, and electrically connected to the electrodes of the wiring substrate via the Au metal wires.

Then, the semiconductor wafer is mounted, and the wiring substrate is sealed and encapsulated with a mold resin, thereby completing the manufacturing step.

[Effect of the embodiment]

As described above, in the above-described manufacturing method of the semiconductor device, in the pickup step, before the pickup step of peeling off the semiconductor wafer from the dicing die-bonding film 10, the fourth cutting groove M around the semiconductor wafer 13 is pressed from below. The apex position, thereby removing the dust D adhering to each portion in the cutting groove M, or separating the dust D in a state of crossing the adhesive layer 4 and the adhesive layer 3, and as a result, the adhesive layer 4 and the adhesive The boundary of the layer 3 is suppressed by the dust D when the semiconductor wafer 13 is peeled off, so that the success rate of the pickup operation is improved.

[Other embodiments [1]]

The method of picking up is not limited to the method of picking up from the top side while the central portion of the semiconductor wafer 13 is pressed by the respective pins 23 of the first pressing mechanism 25 as described above.

For example, as shown in FIG. 9, a pick-up device 30 can be used which holds the semiconductor wafer 13 and the dicing die-bonding film 10 on which the expansion ring 8 is mounted, and has a position along the horizontal plane that can be arbitrarily moved and can be lifted and lowered. The adsorption head 31 is provided with an adsorption chuck (not shown) above the semiconductor wafer 13.

Figure 10 is a plan view of the adsorption head 31, and Figure 11 is a cross-sectional view of the adsorption head 31 along a vertical plane.

The suction head 31 of the pickup device 30 is internally vacuum-drawn, and six suction ports 32 are formed thereon.

Further, the movable cover 34 is formed with a concave portion 33 formed on the upper surface of the adsorption head 31, and is fitted to the concave portion 33, and the concave portion 33 is opened and closed by sliding along the upper surface of the head portion.

In FIG. 10, the position of the semiconductor wafer 13 in the case where the adsorption head 31 is appropriately positioned with respect to the semiconductor wafer 13 to be picked up is indicated by a chain double-dashed line. As shown, the recess 32 and the movable cover 34 are set to have a width slightly narrower than the semiconductor wafer 13. Further, each of the suction ports 32 is disposed such that the outer edge portion of the concave portion 33 is substantially inside of the concave portion 33.

In order to pick up the semiconductor wafer 13, when the dicing die 101 is peeled off from the target semiconductor wafer 13, the chuck and the absorbing head 31 are positioned directly under the semiconductor wafer 13 with the movable cover 34 closed. The suction is performed up and down by the adsorption chuck and the adsorption head 31. That is, in a state in which the movable cover 34 is closed, the suction ports 32 are also in a state of being opened, whereby the back surface of the dicing die-bonding film 10 is adsorbed on the upper surface of the adsorption head 31. Then, when the movable cover 34 is slowly slid, as shown in FIG. 12, the recessed portion 33 is slowly opened, and the internal space of the recessed portion 33 is decompressed by the suction port 32, thus corresponding to the opening amount of the movable cover 34. Stripped from the back side of the semiconductor wafer 13. Further, although the adhesive layer 4 and the adhesive layer 3 are not shown in the drawings, the boundaries are peeled off. Then, by opening the movable cover 34 to the width of the semiconductor wafer 13, the entire back surface of the semiconductor wafer 13 can be peeled off.

Further, a pressing member 35 having the same structure as that of the second pressing member 24 is provided in the adsorption head 30. The pressing member 35 also has a structure in which four needles 36 that press the four intersecting positions of the cutting grooves M around the semiconductor wafer 13 are provided, and are moved up and down by the actuator 37. Further, on the upper surface of the adsorption head 31, as shown in FIG. 10, a through hole 38 is formed at a position corresponding to the four corner portions of the semiconductor wafer 13, and the respective needles 36 of the pressing member 35 can be protruded from the through hole 38. .

That is, after the back surface of the dicing die-bonding film 10 is adsorbed on the upper surface of the adsorption head 31 until the movable cover 34 is opened, the pressing member 35 is raised, and the respective pins 36 press the vicinity of the four corners of the semiconductor wafer 13 from below. Thereby, the dust D in the cutting groove M is removed or separated from the state of crossing the two layers 3, 4.

Then, by opening the movable cover 34, the semiconductor wafer 13 is etched and the adhesive layer 3 of the die-bonding film 10 is peeled off from the adhesive layer 4. Thereafter, the adsorption chuck picks up the semiconductor wafer 13, and thereafter the same steps as described above are performed.

[Other embodiments [2]]

Regarding the method of picking up, another embodiment is shown.

As in the case of the above-described FIG. 9, the pick-up device 40 can be used for picking up and removing the dust D. The pick-up device 40 holds the semiconductor wafer 13 and the dicing-mu-film 10 which are equipped with the expansion ring 8 underneath. The adsorption head 41 which is arbitrarily movable along the horizontal plane and which can be moved up and down is provided, and an adsorption chuck (not shown) is provided above the semiconductor wafer 13.

Figure 13 is a plan view of the adsorption head 41, and Figure 14 is a cross-sectional view of the adsorption head 41 along a vertical plane.

The adsorption head 41 of the pickup device 40 is internally vacuum-treated, and a plurality of suction ports 42 are formed thereon.

Further, the adsorption head 41 is provided at the center of the upper surface thereof so as to be concentrically provided with rectangular projections 43, 44 and 45. The protruding block 43 at the center has a quadrangular prism shape, and the protruding block 44 on the outer side is formed in a quadrangular frame shape so as to surround the periphery of the protruding block 43, and the protruding block 45 on the outer side is formed to surround the protruding block 44. Square frame. Further, the protruding block 45 is set to have substantially the same size as the semiconductor wafer 13 to be picked up.

The three protruding blocks 43, 44, and 45 are simultaneously protruded upward while the upper end faces thereof are aligned, and the outermost protruding block 45 stops rising and then rises at a certain amount of protrusion. The protruding amount second projecting block 44 is stopped, and then the center protruding block 43 is stopped in the most protruding state. As a result, in the protruding state, the protruding blocks 43 to 45 can be formed in a substantially pyramidal shape in which the center portion is most protruded as shown by a chain double-dashed line in Fig. 14 . By performing the protruding operation in this state in sequence, the dicing die-bonding film 10 (correctly the adhesive layer 3 and the adhesive layer 4 of the dicing-mud film 10) is peeled off from the semiconductor wafer 13 The outer side of the semiconductor wafer 13 is sequentially peeled off, and the peeling is slowly promoted, so that the semiconductor wafer can be protected.

Further, when the three blocks 43 to 45 are operated in the above-described order, the three actuators that are equipped to move the respective blocks up and down can be provided with a interlocking structure between the blocks in a mechanically interlocking manner.

Further, the suction head 41 is provided with a pressing member 46 for performing the treatment of the dust D in the same manner as the above-described pressing members 24 and 35. The pressing member 46 is a four-corner frame that is pressed against the entire rectangular shape of the cutting groove M surrounding the semiconductor wafer 13, and is configured to be vertically moved by an actuator (not shown). .

The rectangular frame-shaped pressing member 46 includes the protruding blocks 43 to 45 on the inner side thereof, and is disposed on the adsorption head 41 so as to surround the blocks 43 to 45.

In other words, the inside of the head portion 41 is brought into a vacuum state, and only the pressing member 46 is raised before the back surface of the dicing die-bonding film 10 is adsorbed on the upper surface of the adsorption head 41 until the upward movement of the respective protruding blocks 43 to 45 is started. The periphery of the semiconductor wafer 13 is pressed from below. Thereby, the dust D in the cutting groove M is removed or separated from the state of crossing the two layers 3, 4.

Then, as described above, the respective protruding blocks 43 to 45 are raised, and the semiconductor wafer 13 is diced to peel off the adhesive layer 3 of the adhesive film 10 and the adhesive layer 4. Thereafter, the adsorption chuck picks up the semiconductor wafer 13, and thereafter the same steps as described above are performed.

Further, since the pressing member 46 and the respective protruding blocks 43 to 45 operate as described above, it is necessary to separately provide separate driving sources different from those of the above.

[other]

Further, in each of the above-described embodiments, the pressing members 24, 35, and 46 for performing the process of cutting the dust D are exemplified as being carried by the pick-up device, but the invention is not limited thereto. In other words, it is also possible to separately provide a special processing device for performing the processing of the dust D differently from the pick-up device, and after the dust D is processed by the processing device, the dicing film 10 and the semiconductor wafer are cut. 13 Transfer to the pick-up device to perform the picking operation.

Further, any one of the pressing members 24, 35, and 46 performs the dust D treatment on one semiconductor wafer 13, but may be configured as in the case of the pressing member 51 shown in the plan view of Fig. 15A. A needle 52 is provided which is capable of simultaneously pressing a plurality of adjacent (four illustrated here) semiconductor wafers 13 against the intersection of the cutting grooves therearound.

Further, as in the case of the pressing member 53 shown in the plan view of Fig. 15B, it is possible to simultaneously press the adjacent plurality of (four illustrated here) semiconductor wafers 13 against the cutting groove around the same. The overall frame shape.

Further, the pressing member for performing the dust treatment may be constituted by one needle, and as shown in FIG. 16, the pressing position is moved along the cutting groove around the target semiconductor wafer 13, and the drawing is performed as The rectangular shape is pressed.

[Examples]

Next, each of Examples 1 to 5 in which semiconductor wafers were picked up and pressed around the semiconductor wafer using various dicing-bonding films, and the conditions of Embodiments 1 to 5 were equal and no semiconductor wafer was used. In Comparative Examples 1 to 5, the comparison test of the success rate of picking was performed.

Hereinafter, the results of the comparative test will be described.

The applicable conditions of the above comparative test are as shown in Table 1 above.

Further, the types of the adhesive layer, the adhesive layer, and the intermediate resin layer of Table 1 are as follows.

[Epoxy system of the adhesive layer (1)]

Γ-mercaptopropyltrimethoxydecane as a decane coupling agent, which is a cresol novolak type epoxy resin (epoxy equivalent: 197, molecular weight 1200, softening point: 70 ° C) as an epoxy resin, 50 parts by mass. 1.5 parts by mass, 3 parts by mass of γ-ureidopropyltriethoxydecane, and 30 parts by mass of a cerium oxide filler having an average particle diameter of 16 nm, cyclohexanone was added thereto, stirred and mixed, and further used as a bead mill. Machine mixing for 90 minutes.

100 parts by mass of an acrylic resin (mass average molecular weight: 800,000, glass transition temperature: -17 ° C), 5 parts of dipentaerythritol hexaacrylate as a 6-functional acrylate monomer, and 6 as a hardener 0.5 part of an adduct of methylene diisocyanate and 2.5 parts of Curezol 2PZ (manufactured by Shikoku Chemicals Co., Ltd., trade name: 2-benzimidazole) were stirred and mixed, and vacuum-degassed to obtain an adhesive.

The adhesive was applied to a release-treated polyethylene terephthalate film having a thickness of 25 μm after the thickness of the dried layer became the thickness shown in Table 1, and dried by heating at 110 ° C for 1 minute to prepare. Then the film.

[Epoxy system of the adhesive layer (2)]

50 parts by mass of EP-49-23 (trade name, chelating modified bisphenol F type epoxy resin, epoxy equivalent: 175 g/eq), which is an epoxy resin, as a phenol resin Milex XLC-LL (trade name, manufactured by Mitsui Chemicals Co., Ltd., hydroxyl equivalent: 175 g/eq, water absorption: 1.8%, heating weight reduction at 350 ° C, 4%) 50 parts by mass, as a hardening accelerator Curezol 2PZ (trade name manufactured by Shikoku Chemicals Co., Ltd., 2-benzimidazole) 0.4 parts by mass, and acrylic resin SG-708-6 (trade name manufactured by Nagase ChemteX Co., Ltd., weight average molecular weight: 700,000, glass To the adhesive composition comprising 200 parts by mass of a transfer temperature of 6 ° C), methyl ethyl ketone was added, and the mixture was stirred and mixed to prepare an adhesive varnish. The adhesive varnish of the produced adhesive composition was applied onto a release film so as to have a thickness of 20 μm after drying, and dried at 110 ° C for 3 minutes to prepare a film.

[Adhesive layer (1)]

In 400 g of toluene in a solvent, 128 g of n-butyl acrylate, 307 g of 2-ethylhexyl acrylate, 67 g of methyl methacrylate, and 1.5 g of methacrylic acid were added as appropriate as a polymerization initiator. A mixture of benzamidine and a reaction temperature and a reaction time are adjusted to obtain a solution of the compound (1) having a functional group.

Next, in the polymer solution, the amount of the liquid to be added is appropriately adjusted, and the compound (2) having a radiation-curable carbon-carbon double bond and a functional group is additionally added to the 2-methyl group synthesized from methacrylic acid and ethylene glycol. 2.5 g of hydroxyethyl acrylate, hydroquinone as a polymerization inhibitor, and a reaction temperature and a reaction time were adjusted to obtain a solution of the compound (A) having a radiation curable carbon-carbon double bond. Then, with respect to 100 parts by mass of the compound (A) in the solution of the compound (A), 1 part by mass of Nippon Polyurethane Co., Ltd., which is a polyisocyanate (B), is added: Coronate L, and 0.5 part by mass is used as a photopolymerization. The initiator was manufactured by Ciba-Geigy Co., Ltd., Japan: Irgacure 184, and 150 parts by mass of ethyl acetate as a solvent was added to the compound (A) and mixed to obtain a radiation curable adhesive composition.

[Intermediate resin layer (1)]

100 parts by mass of an acrylic resin (mass average molecular weight: 600,000, glass transition temperature: -20 ° C), and 10 parts by mass of a polyisocyanate compound (manufactured by Nippon Polyurethane Co., Ltd., trade name: Coronate L) as a curing agent were mixed. An intermediate resin layer composition was obtained.

The intermediate resin layer composition was applied to an ethylene-vinyl acetate copolymer film having a thickness of 100 μm as a base film, and dried at 110 ° C for 3 minutes, and further dried to a thickness of 10 μm. The adhesive layer composition was applied and dried at 110 ° C for 3 minutes to prepare an adhesive tape. For those without an intermediate resin layer, the adhesive layer composition is directly applied to the base film and dried. The adhesive film was bonded to the adhesive layer of the adhesive tape to obtain the dicing-mulet films of Examples 1 to 5 and Comparative Examples 1 to 5 shown in Table 1.

Further, in Examples 1 to 5 and Comparative Examples 1 to 5, tests were carried out using the respective modes of Figs. 4, 12, and 14 in the picking method. In Examples 1 to 4 and Comparative Examples 1 to 4, the pick-up test was carried out only in the manner shown in Figs. 12 and 14 . For the pick-up, a wafer having a dust of 5 μm or more attached to each of the numbers shown in Table 2 was used.

Then, the results of the comparative test are shown in Table 2 below. Furthermore, in the respective picking methods, the case where the four needles are pressed as shown in FIG. 6, the case where the needle is pressed by the square frame, and the needle is followed by one needle. The cutting grooves were each subjected to a pick-up test by moving the pressing positions against the periphery of the wafer, and all of them were the same result, and therefore are collectively shown in Table 2.

As shown in Table 2, in Comparative Examples 1 to 4, the periphery of the semiconductor wafer was not pressed in advance, and in other respects, the pickup was performed under the same conditions, but the pickup was hardly performed in a good manner regardless of the pickup method.

Further, in the fifth and comparative examples 5, any of the methods shown in Figs. 12 and 14 can obtain a higher picking success rate. However, in the case of Fig. 4, the comparative example 5 cannot be picked up.

[Industrial availability]

It is available in the field of manufacturing semiconductor devices using wafer processing tapes.

1. . . Substrate film

2. . . Intermediate resin layer

3, T2. . . Adhesive layer

4, T3. . . Subsequent layer

5. . . Ring frame

8. . . Expansion ring

10. . . Cutting-mud film (wafer processing tape)

11. . . Semiconductor wafer

12. . . Cutting blade

13, W1. . . Semiconductor wafer

14. . . Adsorption station

20, 30, 40. . . Pickup device

twenty one. . . Suction table

21a, 32, 42. . . Suction port

twenty two. . . head

23, 24, 36, 52. . . needle

25. . . First pressing member

26. . . Second pressing member

27. . . Adsorption chuck

31, 41. . . Adsorption head

33. . . Concave

34. . . Movable cover

35, 46, 51, 53. . . Compression member

37. . . Actuator

38. . . Through hole

43, 44, 45. . . Highlight block

D. . . dust

K. . . borderline

M. . . Cutting slot

T. . . Wafer processing tape

Fig. 1 is a view showing a state in which a semiconductor wafer and a ring frame for dicing are bonded to a dicing die-bonding film.

Fig. 2 is an explanatory view showing a cutting step.

Fig. 3 is a view for explaining a step of irradiating radiation.

Figure 4 is a partial cross-sectional view showing the main part of the pickup device.

Fig. 5 is a plan view showing the arrangement of the needle in the first pressing member as viewed from above.

Fig. 6 is a plan view showing four positions where a rectangular semiconductor wafer against which a pressing object is pressed is pressed.

Fig. 7 is an operation explanatory view showing a state in which the pressing member is raised.

Fig. 8A is an enlarged cross-sectional view showing a state in which the respective pins of the second pressing member are pressed against the semiconductor wafer.

Fig. 8B is an enlarged cross-sectional view showing a state after the semiconductor wafer is pressed.

Fig. 9 is a cross-sectional view showing the pickup device in another embodiment [1].

Figure 10 is a plan view of the adsorption head.

Figure 11 is a cross-sectional view of the adsorption head along a vertical plane.

Figure 12 is a cross-sectional view of the adsorption head taken along a vertical plane in a state in which the movable cover is opened.

Figure 13 is a plan view showing the adsorption head of the pickup device in the other embodiment [2].

Figure 14 is a cross-sectional view of the adsorption head along a vertical plane.

Fig. 15A is a plan view of a pressing member using a needle corresponding to a plurality of semiconductor wafers.

Fig. 15B is a plan view showing a pressing member corresponding to a frame configuration of a plurality of semiconductor wafers.

Fig. 16 is an explanatory view of a pressing member that is pressed by a needle.

Figure 17 is a cross-sectional view showing a dicing-mulet film and a semiconductor wafer in the prior art in the state of generation of dust caused by dicing.

10. . . Cutting a die film (wafer processing tape)

13. . . Semiconductor wafer

20. . . Pickup device

twenty one. . . Suction table

21a. . . Suction port

twenty two. . . head

23, 24. . . needle

25. . . First pressing member

26. . . Second pressing member

27. . . Adsorption chuck

Claims (4)

A method of manufacturing a semiconductor device, comprising the steps of: dicing a semiconductor wafer after the wafer processing tape is diced, dividing the semiconductor wafer into a plurality of semiconductor wafers; and attaching the wafer to the wafer processing a step of picking up a semiconductor wafer to be peeled off from the plurality of semiconductor wafers from the wafer processing tape; and using a pressing member to press the cutting groove to surround the peeling target from the back side of the wafer processing tape After the dicing groove of the semiconductor wafer or the dicing groove and the entire outer edge portion of the semiconductor wafer, the semiconductor wafer is picked up from the wafer processing tape. The method of manufacturing a semiconductor device according to claim 1, wherein the dicing groove surrounding the semiconductor wafer or the entire or a portion of the dicing groove and the outer edge portion of the semiconductor wafer is pressed along the region The shape of the frame is carried out. The method of manufacturing a semiconductor device according to claim 1, wherein the dicing groove surrounding the semiconductor wafer or the entire or a portion of the dicing groove and the outer edge portion of the semiconductor wafer is pressed along the region Configure multiple pins to perform. The method of manufacturing a semiconductor device according to any one of claims 1 to 3, wherein the dicing groove surrounding the semiconductor wafer or the entire or a part of the dicing groove and the outer edge portion of the semiconductor wafer is pressed A plurality of semiconductor wafers are performed in units.