TWI426273B - Probe and probe support construction - Google Patents

Probe and probe support construction Download PDF

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Publication number
TWI426273B
TWI426273B TW97149566A TW97149566A TWI426273B TW I426273 B TWI426273 B TW I426273B TW 97149566 A TW97149566 A TW 97149566A TW 97149566 A TW97149566 A TW 97149566A TW I426273 B TWI426273 B TW I426273B
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Taiwan
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probe
insulator
conductive pin
conductive
disposed
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TW97149566A
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Chinese (zh)
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TW200935067A (en
Inventor
Takumi Yamamoto
Akihiko Akabane
Makoto Wada
Seiichi Fukushi
Naoto Koike
Masanori Fujii
Takashi Kaneko
Toshihiro Zushi
Yuuji Kobayashi
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Mitsubishi Cable Ind Ltd
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Priority claimed from JP2007339251A external-priority patent/JP5081613B2/en
Priority claimed from JP2008289747A external-priority patent/JP2010117209A/en
Priority claimed from JP2008305971A external-priority patent/JP2010127879A/en
Application filed by Mitsubishi Cable Ind Ltd filed Critical Mitsubishi Cable Ind Ltd
Publication of TW200935067A publication Critical patent/TW200935067A/en
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Publication of TWI426273B publication Critical patent/TWI426273B/en

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/06Measuring leads; Measuring probes
    • G01R1/067Measuring probes
    • G01R1/06772High frequency probes
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/06Measuring leads; Measuring probes
    • G01R1/067Measuring probes
    • G01R1/06711Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06733Geometry aspects
    • G01R1/06738Geometry aspects related to tip portion
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/06Measuring leads; Measuring probes
    • G01R1/067Measuring probes
    • G01R1/06711Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06733Geometry aspects
    • G01R1/0675Needle-like
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/06Measuring leads; Measuring probes
    • G01R1/067Measuring probes
    • G01R1/073Multiple probes
    • G01R1/07307Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/07357Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with flexible bodies, e.g. buckling beams
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2886Features relating to contacting the IC under test, e.g. probe heads; chucks
    • G01R31/2891Features relating to contacting the IC under test, e.g. probe heads; chucks related to sensing or controlling of force, position, temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R2103/00Two poles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R2201/00Connectors or connections adapted for particular applications
    • H01R2201/20Connectors or connections adapted for particular applications for testing or measuring purposes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R24/00Two-part coupling devices, or either of their cooperating parts, characterised by their overall structure
    • H01R24/38Two-part coupling devices, or either of their cooperating parts, characterised by their overall structure having concentrically or coaxially arranged contacts
    • H01R24/40Two-part coupling devices, or either of their cooperating parts, characterised by their overall structure having concentrically or coaxially arranged contacts specially adapted for high frequency

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Measuring Leads Or Probes (AREA)

Description

探針及探針支持構造Probe and probe support structure

本發明係關於一種IC晶片或基板上之電路等之電氣特性檢查所使用之探針。The present invention relates to a probe used for electrical property inspection of an IC chip or a circuit on a substrate.

隨著半導體裝置之小型化及微細化,此等之輸入輸出端子之排列間距亦已盡可能變小,對應此等輸入輸出端子之排列間距的窄小化,探針亦已細徑化。With the miniaturization and miniaturization of the semiconductor device, the arrangement pitch of the input and output terminals has been reduced as much as possible, and the probe has been narrowed in accordance with the narrowing of the arrangement pitch of the input and output terminals.

以上述探針而言,已提出有In view of the above probes,

(1)在形成為圓筒狀之外部導體的中心,隔著空隙插通導電針,並於外部導體之軸心方向的適當部位配置由絕緣材料所構成之間隔件,在該間隔件插通支持導電針之構造者(例如,參照專利文獻1)、或(1) A conductive needle is inserted through a gap in a center of an outer conductor formed in a cylindrical shape, and a spacer made of an insulating material is placed at an appropriate portion in the axial direction of the outer conductor, and the spacer is inserted through the spacer. A constructor that supports a conductive needle (for example, refer to Patent Document 1), or

(2)以發泡樹脂材料構成之絕緣體來填埋導電針與外部導體間之間隙者等。(2) A gap between the conductive needle and the external conductor is filled with an insulator made of a foamed resin material.

專利文獻1:日本特開2002-257849號公報Patent Document 1: Japanese Laid-Open Patent Publication No. 2002-257849

隨著近年來半導體裝置之輸入輸出端子之排列間距的窄小化,亦提高對探針之細徑化的要求,目前細徑化雖已進展至0.3mm左右,但最好進一步細徑化。In recent years, the narrowing of the arrangement pitch of the input and output terminals of the semiconductor device has increased the demand for the diameter of the probe. Although the diameter reduction has progressed to about 0.3 mm, it is preferable to further reduce the diameter.

又,為了確保所欲之高頻特性,探針中亦要求提高絕緣體之介電係數。Moreover, in order to ensure the desired high frequency characteristics, it is also required to increase the dielectric constant of the insulator in the probe.

又,由於探針係使導電針之前端(檢查端)以既定壓力按壓接觸於檢查對象,因此最好亦能充分確保導電針對絕緣體在軸心方向之拉拔強度,以使導電針對絕緣體不會因其按壓作用力在軸心方向滑動位移。Moreover, since the probe is such that the front end (inspection end) of the conductive pin is pressed against the inspection object at a predetermined pressure, it is preferable to sufficiently ensure the drawing strength of the conductive body in the axial direction of the insulator so that the conductive is not for the insulator. The sliding force is displaced in the axial direction due to the pressing force.

針對此種要求,根據上述習知構造(1),由於在導電針與圍繞此之外部導體之間,形成有作為空氣絕緣層之空隙,因此雖可獲得某種程度之介電係數,不過藉由空隙所形成之空氣絕緣層會因配置於軸心方向之適當部位的間隔件而被截斷,使空隙與間隔件之邊界成為造成高頻反射之主因,而難以使用在數GHz以上之高頻區域。In response to such a request, according to the above-described conventional structure (1), since a gap as an air insulating layer is formed between the conductive pin and the outer conductor surrounding the hole, a certain degree of dielectric constant can be obtained, but The air insulating layer formed by the gap is cut off by the spacer disposed at an appropriate portion in the axial direction, so that the boundary between the gap and the spacer becomes a main cause of high frequency reflection, and it is difficult to use a high frequency of several GHz or more. region.

又,根據上述習知構造(1),為了形成空氣絕緣層,將間隔件配置於軸心方向之適當部位的構造上,在貫通支持於該間隔件之導電針之軸心方向的支持長度,相對於導電針之長度會變得較短,而難以謀求探針之細徑化,並提高絕緣體之介電係數且又充分增強對導電針之軸心方向的拉拔強度。Further, according to the above-described conventional structure (1), in order to form the air insulating layer, the spacer is disposed in a structure of an appropriate portion in the axial direction, and the support length penetrates the axial direction of the conductive needle supported by the spacer, The length of the conductive needle is shortened, and it is difficult to reduce the diameter of the probe, and the dielectric constant of the insulator is increased and the drawing strength in the axial direction of the conductive needle is sufficiently enhanced.

又,上述習知構造(2)中,為了提高絕緣體之介電係數,雖必須提高發泡率或加大絕緣體之直徑,不過以目前發泡絕緣體之構成,卻無法確保所欲之強度(導電針之拉拔強度)同時又將發泡率提高至50%以上,而只能增大絕緣體徑以確保所欲之高頻特性。然而,以此方法探針之細徑化卻會變得困難。Further, in the above-described conventional structure (2), in order to increase the dielectric constant of the insulator, it is necessary to increase the expansion ratio or increase the diameter of the insulator, but the current foamed insulator does not ensure the desired strength (conductivity). The pull strength of the needle) increases the foaming rate to more than 50%, and only increases the diameter of the insulator to ensure the desired high frequency characteristics. However, the thinning of the probe in this way becomes difficult.

又,上述習知構造(2)中,絕緣體雖已在軸心方向對導電針增長接觸,不過由於絕緣體係藉由擠壓成形所形成,因此絕緣體對導電針外周之密合程度較低,而難以充分增大導電針之拉拔強度。Further, in the above conventional structure (2), although the insulator has been in contact with the conductive needle in the axial direction, since the insulating system is formed by extrusion molding, the degree of adhesion of the insulator to the outer circumference of the conductive needle is low, and It is difficult to sufficiently increase the drawing strength of the conductive needle.

再者,上述習知構造(2)中,為了提高絕緣體之介電係數,則必須提高發泡率或加大絕緣體之直徑。然而,若提高絕緣體之發泡率,則絕緣體與導電針之密合程度便會降低,而難以確保所欲之拉拔強度。又,加大絕緣體之直徑,如以上所述,卻又妨礙探針之細徑化。Further, in the above conventional structure (2), in order to increase the dielectric constant of the insulator, it is necessary to increase the expansion ratio or increase the diameter of the insulator. However, if the expansion ratio of the insulator is increased, the degree of adhesion between the insulator and the conductive needle is lowered, and it is difficult to secure the desired drawing strength. Further, increasing the diameter of the insulator, as described above, prevents the diameter of the probe from being reduced.

本發明係著眼於上述之點而構成,主要目的在於:The present invention is constructed in view of the above points, and the main purpose is to:

‧提供一種可在較高之高頻區域使用之探針且另外之目的在於:‧Provides a probe that can be used in higher frequency regions and has the additional purpose of:

‧提供一種可謀求細徑化同時亦可在較高之高頻區域使用之探針‧Providing a probe that can be used for thinning and high frequency regions

‧充分確保導電針之拉拔強度。‧ Fully ensure the drawing strength of the conductive needle.

為了達成上述目的,本發明之探針,其具備:導電針;絕緣體,係配置於該導電針周圍;以及外部導體,與該導電針同心狀配置於該絕緣體之外周;於該絕緣體設置貫通該導電針之軸心方向的透孔。In order to achieve the above object, a probe according to the present invention includes: a conductive pin; an insulator disposed around the conductive pin; and an outer conductor disposed concentrically with the conductive pin on an outer circumference of the insulator; the insulator is disposed through the insulator A through hole in the axial direction of the conductive needle.

根據此構成,由於藉由空隙所形成之空氣絕緣層係連續於軸心方向,因此即使在數GHz以上之高頻區域亦可進行無反射之良好訊號收授。又,亦可將貫通於軸心方向並形成空氣絕緣層之空隙利用作為光束之通路。According to this configuration, since the air insulating layer formed by the gap is continuous in the axial direction, good signal reception without reflection can be performed even in a high frequency region of several GHz or more. Further, a gap that penetrates the axial direction and forms an air insulating layer may be used as a path of the light beam.

此外,本發明係以將該透孔設置於該導電針周圍之複數個部位較佳。如此,可將貫通於軸心方向並形成空氣絕緣層之空隙利用作為光束之通路,且將複數個透孔之任一個利用於光束之入射通路,並將其他透孔利用於反射光束之返回通路,以進行使探針接觸導通之線路部位的位置檢測。Further, in the present invention, it is preferable that the through holes are provided in a plurality of portions around the conductive needle. In this way, a gap that penetrates the axial direction and forms an air insulating layer can be utilized as a path of the light beam, and any one of the plurality of through holes can be utilized for the incident path of the light beam, and the other through holes can be utilized for the return path of the reflected light beam. To perform position detection of the line portion where the probe is in contact with conduction.

此外,以複數個該透孔係配置於相對該導電針之軸心呈點對稱之位置較佳。如此,可使光束之入射通路與反射光束之返回通路位於相對導電針呈對角之位置,而可以高精度進行使導電針之前端接觸導通之對象部位的位置檢測。又,藉由使空氣絕緣層位於相對導電針之軸心呈點對稱之位置,而使導電針外周之絕緣均衡良好且電氣特性亦優異。Further, it is preferable that a plurality of the through holes are disposed at positions which are point symmetrical with respect to the axis of the conductive needle. In this way, the incident path of the light beam and the return path of the reflected light beam can be positioned at a diagonal position with respect to the conductive needle, and the position detection of the target portion where the front end of the conductive pin is in contact with conduction can be performed with high precision. Further, by making the air insulating layer point-symmetrical with respect to the axis of the conductive needle, the insulation of the outer circumference of the conductive needle is well balanced and the electrical characteristics are excellent.

此外,本發明係以該導電針係由含鎢合金之鎢材構成較佳。如此,可提高導電針之強度及耐久性,而對探針之細徑化有效。Further, in the present invention, it is preferable that the conductive needle is made of a tungsten material containing a tungsten alloy. Thus, the strength and durability of the conductive needle can be improved, and the diameter of the probe can be reduced.

此外,本發明係以該絕緣體之孔隙率在60%以上較佳。如此,可充分提高導電針與外部導體間之間隙的孔隙比例以提高絕緣體之介電係數,而可確保所欲之高頻特性同時使探針充分細徑化。Further, in the present invention, the porosity of the insulator is preferably 60% or more. In this way, the ratio of the pores in the gap between the conductive needle and the outer conductor can be sufficiently increased to increase the dielectric constant of the insulator, and the desired high frequency characteristics can be ensured while the probe is sufficiently thinned.

此外,本發明中,較佳為該絕緣體,具備:內層體,對該導電針覆蓋外周面而設置;外層體,覆蓋該外部導體之內周面而設置;以及複數個放射狀肋部,從該內層體朝向直徑方向外側放射狀突出,且連結於該外層體之內周側;將該放射狀肋部連續設置於該導電針之長邊方向。Further, in the invention, it is preferable that the insulator includes an inner layer body provided to cover the outer peripheral surface of the conductive needle, an outer layer body provided to cover an inner peripheral surface of the outer conductor, and a plurality of radial ribs. The inner layer body radially protrudes outward in the radial direction, and is coupled to the inner peripheral side of the outer layer body. The radial rib portion is continuously provided in the longitudinal direction of the conductive needle.

如此,由於藉由空隙所形成之空氣絕緣層係連續於導電針之長邊方向,因此即使在數GHz以上之高頻區域亦可進行無反射之良好訊號收授。又,可充分提高導電針與外部導體間之間隙的孔隙比例以提高絕緣體之介電係數,而可確保所欲之高頻特性同時使探針充分細徑化。In this way, since the air insulating layer formed by the gap is continuous in the longitudinal direction of the conductive pin, good signal reception without reflection can be performed even in a high frequency region of several GHz or more. Further, the ratio of the voids in the gap between the conductive needle and the outer conductor can be sufficiently increased to increase the dielectric constant of the insulator, and the desired high frequency characteristics can be ensured while the probe is sufficiently reduced in diameter.

此外,本發明中,較佳為,於該外部導體之外周面配置螺旋捲繞之捲帶層作為絕緣外皮,且以1/2重疊捲繞形成該捲帶層。Further, in the invention, it is preferable that a spirally wound tape layer is disposed as an insulating sheath on the outer peripheral surface of the outer conductor, and the wound layer is formed by winding at a half overlap.

如此,藉由以1/2重疊捲繞之捲帶層形成探針之絕緣外皮,絕緣體即從外周被緊繞而強固地密合於導電針,以提高導電針之拉拔強度。Thus, by forming the insulating sheath of the probe by the 1/2 overlap wound winding layer, the insulator is tightly wound from the outer circumference and firmly adhered to the conductive needle to improve the drawing strength of the conductive needle.

又,由於探針之絕緣外皮係以1/2重疊捲繞之捲帶層所形成,因此絕緣體係從外周被緊繞而結實地密合於導電針,而提高導電針之拉拔強度。Further, since the insulating sheath of the probe is formed by a 1/2 overlap wound winding layer, the insulating system is tightly wound from the outer periphery and firmly adheres to the conductive needle, thereby improving the drawing strength of the conductive needle.

又,探針之絕緣外皮係以藉由1/2重疊捲繞以捲繞重疊成2層之捲帶層所形成,藉此提高探針整體之彎曲強度,在導電針之檢查端按壓於檢查對象時,藉由該按壓作用力使探針大幅彎曲變形,以避免對檢查對象之接觸壓力不足。Further, the insulating sheath of the probe is formed by winding a 1/2 overlap winding to wind up a two-layer tape layer, thereby improving the overall bending strength of the probe, and pressing the inspection at the inspection end of the conductive needle. When the object is used, the probe is largely bent and deformed by the pressing force to prevent insufficient contact pressure to the inspection object.

再者,構成探針外周面之捲帶層的外周面,係藉由1/2重疊捲繞而形成無捲繞段差之平滑面。因此,在將探針之基部固定支持於固定板,並將探針之檢查端側可滑動地貫通支持於滑板,而使其接近於檢查對象時,即可使因對檢查對象之按壓作用力而彎折變形的探針,對滑板以較小阻力順利滑動位移,並可藉由探針之彎折復原力使導電針之檢查端以適切之接觸壓力按壓於檢查對象。Further, the outer peripheral surface of the winding layer constituting the outer peripheral surface of the probe is formed by 1/2 overlap winding to form a smooth surface having no winding step. Therefore, when the base of the probe is fixedly supported by the fixing plate, and the inspection end side of the probe is slidably supported by the sliding plate so as to be close to the inspection object, the pressing force against the inspection object can be made. The bent and deformed probe smoothly slides the slide plate with less resistance, and the inspection end of the conductive needle can be pressed against the inspection object with a suitable contact pressure by the bending and restoring force of the probe.

此外,較佳為,螺旋捲繞多數條導線以形成該外部導體,且使該捲帶層之螺旋捲繞方向與該導線之螺旋捲繞方向為反向。如此,可使導線之捲繞鬆脫及捲帶層之捲繞鬆脫彼此互相阻止,而可高度維持探針之彎曲強度。Further, it is preferable that a plurality of wires are spirally wound to form the outer conductor, and the spiral winding direction of the tape layer is opposite to the spiral winding direction of the wire. In this way, the winding of the wire can be loosened and the winding of the tape layer can be prevented from being mutually prevented, and the bending strength of the probe can be highly maintained.

此外,較佳為,於該捲帶層之背面具備熱熔接層。如此,可藉由重疊捲繞處理捲帶層後之加熱或一邊加熱之重疊捲繞處理,使捲帶層以較高之密合性捲繞於外部導體,以提高緊繞效果使探針之彎曲強度的提升更為有效。Further, it is preferable that a heat-fusible layer is provided on the back surface of the tape layer. In this manner, the tape winding layer can be wound around the outer conductor with a high adhesion by superimposing the heating after the winding of the tape layer or the overlapping winding process of heating, thereby improving the tightness effect of the probe. The increase in bending strength is more effective.

此外,本發明中以1/2重疊捲繞表現之捲帶層的捲繞構造,係指一邊將藉由捲繞而相鄰之捲帶層以1/2捲帶寬度彼此相積層,一邊捲繞捲帶層而成的構造。Further, in the present invention, the winding structure of the winding layer which is expressed by 1/2 overlap winding means that the tape layers adjacent to each other by winding are layered with each other by a 1/2 tape width. The structure of the winding tape layer.

本發明之探針支持構造,係支持探針,其特徵在於:將該探針之基端側固定支持於固定板,使該探針之檢查端側可滑動地貫通支持於滑板,使已固定間隔之該固定板與滑板相對檢查對象接近離開,以使該探針之檢查端接觸按壓於檢查對象。The probe supporting structure of the present invention is a supporting probe, which is characterized in that the base end side of the probe is fixedly supported on the fixing plate, so that the inspection end side of the probe is slidably supported by the sliding plate to be fixed. The fixing plate and the sliding plate are spaced apart from the inspection object so that the inspection end of the probe is pressed against the inspection object.

根據該構成,由於構成探針外周面之捲帶層的外周面,係藉由1/2重疊捲繞而形成無捲繞段差之平滑面,因此在探針之下部相對於滑板滑動位移至上方時,在與滑板之貫通部位,探針之下部即可以較小阻力順利滑動位移。According to this configuration, since the outer peripheral surface of the winding layer constituting the outer peripheral surface of the probe is formed by 1/2 overlap winding to form a smooth surface having no winding step, the lower portion of the probe is slidably displaced upward with respect to the slider. At the time of penetration with the slide plate, the lower portion of the probe can smoothly slide and slide with less resistance.

又,探針之絕緣外皮係以藉由1/2重疊捲繞而捲繞重疊成2層之捲帶層所形成,藉此提高探針整體之彎曲強度,在導電針之檢查端按壓於檢查對象時,可避免因該按壓作用力大幅彎曲變形。Further, the insulating sheath of the probe is formed by winding a layer of two layers wound by 1/2 overlap winding, thereby increasing the bending strength of the entire probe, and pressing the inspection at the inspection end of the conductive needle. When the object is used, it is possible to avoid a large bending deformation due to the pressing force.

以此方式,根據本發明之探針,即可在以往檢查困難之較高高頻區域以穩定之特性進行檢查。In this way, according to the probe of the present invention, it is possible to perform inspection with stable characteristics in a relatively high frequency region where the conventional inspection is difficult.

又,可謀求細徑化同時亦可在以往檢查困難之較高高頻區域以穩定之特性進行檢查。Further, it is possible to reduce the diameter and perform inspection in a stable high-frequency region in a high-frequency region where the conventional inspection is difficult.

又,可獲得能充分確保導電針之拉拔強度,並可謀求細徑化同時亦可在較高高頻區域使用之探針。Further, it is possible to obtain a probe which can sufficiently ensure the drawing strength of the conductive needle, and can also be used in a high-frequency region while reducing the diameter.

(第1實施形態)(First embodiment)

圖1係表示本發明之第1實施形態之探針1A的外觀,圖2則表示其橫截面圖。探針1A具備導電針2A、中心插通該導電針2A之絕緣體3A、以與導電針2A同軸圍繞設置於絕緣體3A外周的外部導體4A、及用以覆蓋外部導體4A之外周的絕緣外皮5A。該探針1A係構成為在軸心方向之長度約為20mm、外徑約為0.3mm的極細線狀。導電針2A係以直徑約為0.1mm之鎢絲所形成,本例中構成檢測端之下端係形成為扁平。外部導體4A係將20數條直徑為0.03mm之鍍錫銅合金細線捲繞成螺旋狀。絕緣體3A係由PFA(四氟乙烯.全氟烷基乙烯基醚共聚物)等絕緣樹脂材料所構成,並以放射狀肋部3Ac連結用以插通導電針2A之內層體3Aa及捲繞外部導體4A之外層體3Ab,橫截面形狀則形成為蜂巢形。本例中,以內層體3Aa、外層體3Ab、及放射狀肋部3Ac所圍繞之橫截面形狀為扇形之6個透孔6A,係以相對於導電針2A之軸心呈點對稱的方式,以圓周方向等間距配置形成,且各透孔6A係貫通於導電針軸心方 向並在絕緣體3A之上下端呈開放狀態。絕緣外皮5A係將厚度為0.008mm之PET(聚對苯二甲酸乙二酯)帶加以捲繞而形成。Fig. 1 is a view showing the appearance of a probe 1A according to a first embodiment of the present invention, and Fig. 2 is a cross-sectional view thereof. The probe 1A includes a conductive pin 2A, an insulator 3A whose center is inserted through the conductive pin 2A, an outer conductor 4A that is provided around the outer periphery of the insulator 3A coaxially with the conductive pin 2A, and an insulating sheath 5A that covers the outer periphery of the outer conductor 4A. The probe 1A is formed in an extremely thin line shape having a length of about 20 mm in the axial direction and an outer diameter of about 0.3 mm. The conductive needle 2A is formed of a tungsten wire having a diameter of about 0.1 mm. In this example, the lower end of the detecting end is formed to be flat. The outer conductor 4A winds 20 pieces of tin-plated copper alloy thin wires having a diameter of 0.03 mm into a spiral shape. The insulator 3A is made of an insulating resin material such as PFA (tetrafluoroethylene, perfluoroalkyl vinyl ether copolymer), and is connected to the inner layer body 3Aa and the coil for inserting the conductive needle 2A by the radial rib 3Ac. The outer conductor 4A outer layer body 3Ab has a cross-sectional shape formed in a honeycomb shape. In this example, the six through holes 6A having a fan-shaped cross-sectional shape surrounded by the inner layer body 3Aa, the outer layer body 3Ab, and the radial rib portion 3Ac are point-symmetric with respect to the axis of the conductive needle 2A. They are arranged at equal intervals in the circumferential direction, and each of the through holes 6A penetrates through the center of the conductive needle shaft It is open to the lower end of the insulator 3A. The insulating sheath 5A is formed by winding a PET (polyethylene terephthalate) tape having a thickness of 0.008 mm.

探針1A係以上述方式所構成,如圖4所示,將導通連接於檢查裝置8之一對探針1A之各導電針2A的前端,抵接在裝載於基板9之IC晶片10的端子、或基板9之既定線路部位,並將高頻檢查訊號施加於兩探針1A,以進行電路之特性檢查。The probe 1A is configured as described above, and as shown in FIG. 4, the distal end of each of the conductive pins 2A connected to the probe 1A of one of the inspection devices 8 is electrically connected to the terminal of the IC wafer 10 mounted on the substrate 9. Or a predetermined line portion of the substrate 9, and a high frequency inspection signal is applied to the two probes 1A to perform characteristic inspection of the circuit.

此時,由於藉由透孔6A所形成之空氣絕緣層係連續於軸心方向,因此即使在數GHz以上之高頻區域亦可進行無反射之良好訊號收授。又,導電針2A在其大致全長係以絕緣體3A之內層體3Aa支持,藉此提高導電針2A之拉拔強度。At this time, since the air insulating layer formed by the through hole 6A is continuous in the axial direction, good signal reception without reflection can be performed even in a high frequency region of several GHz or more. Further, the conductive needle 2A is supported by the inner layer body 3Aa of the insulator 3A over substantially the entire length thereof, thereby increasing the drawing strength of the conductive needle 2A.

又,如圖5所示,可從設於探針1A之絕緣體3A之任一透孔6A上端的發光源100,射入雷射束等檢查光以朝向檢查對象部位照射,並使其反射光通過位於與入射用透孔7A呈點對稱位置之其他透孔7A,並導引至受光器101,而從該反射光之變化來檢測出檢查對象部位之金屬部分(端子或電路圖案部分)的位置,以利用於探針1A之定位控制。Further, as shown in FIG. 5, the illumination light source 100 provided at the upper end of any of the through holes 6A of the insulator 3A of the probe 1A is incident on the inspection light such as a laser beam to be irradiated toward the inspection target portion, and is reflected. The other through hole 7A located at a point symmetry with the incident through hole 7A is guided to the light receiver 101, and the metal portion (terminal or circuit pattern portion) of the inspection target portion is detected from the change in the reflected light. Position to utilize the positioning control of the probe 1A.

以下,將在第1實施形態之構造與習知構造(具備發泡絕緣體)之特性差異加以比較後的結果說明如下。一般而言,使用發泡絕緣體之習知構造的發泡度、與第1實施形態之構造的孔隙率(發泡度=孔隙率)係:第1實施形態之構造:60% minHereinafter, the results of comparing the characteristics of the structure of the first embodiment with the conventional structure (including the foamed insulator) will be described below. In general, the degree of foaming of a conventional structure using a foamed insulator and the porosity of the structure of the first embodiment (foaming degree = porosity) are: structure of the first embodiment: 60% min

習知構造:50% minConventional construction: 50% min

因此,分別將具備同一直徑之導電針之第1實施形態之構造(孔隙率為60%)及習知構造(發泡度為50%)之探針的最外徑加以比較。Therefore, the outer diameters of the probes of the first embodiment (porosity: 60%) and the conventional structures (foaming degree: 50%) of the conductive needles having the same diameter were compared.

第1實施形態之構造中,若以In the structure of the first embodiment,

最外徑:do1Outer diameter: do1

導電針徑:diConductive needle diameter: di

空隙:A1Void: A1

孔隙率:0.6Porosity: 0.6

時,則孔隙率=A1/[π/4×(do12 -di2 )]Porosity = A1/[π/4×(do1 2 -di 2 )]

因此,若代入孔隙率=0.6則成為Therefore, if the substitution porosity = 0.6, it becomes

0.6=A1/[π/4×(do12 -di2 )]0.6=A1/[π/4×(do1 2 -di 2 )]

另一方面,習知構造中,若以On the other hand, in the conventional structure,

最外徑:do2Outer diameter: do2

導電針徑:diConductive needle diameter: di

空隙:A2Void: A2

發泡度:0.5Foaming degree: 0.5

時,則發泡度=A2/[π/4×(do22 -di2 )]At the time, the degree of foaming = A2 / [π / 4 × (do2 2 - di 2 )]

因此,若代入孔隙率=0.5則成為Therefore, if the substitution porosity = 0.5, it becomes

0.5=A2/[π/4×(do22 -di2 )]。0.5 = A2 / [π / 4 × (do2 2 - di 2 )].

此外,此處所稱之空隙係指垂直於軸線之一截面之孔隙面積的合計。Further, the term "void" as used herein refers to the total of the area of the pores perpendicular to one of the axes.

為了使第1實施形態之探針1A之電氣特性與習知構造之電氣特性同等,則必須使第1實施形態之構造之空隙A1與習知構造之空隙A2相同(A1=A2)。In order to make the electrical characteristics of the probe 1A of the first embodiment equivalent to the electrical characteristics of the conventional structure, it is necessary to make the gap A1 of the structure of the first embodiment the same as the gap A2 of the conventional structure (A1=A2).

因此,therefore,

0.6×π/4×(do12 -di2 )=0.5×π/4×(do22 -di2 )0.6×π/4×(do1 2 -di 2 )=0.5×π/4×(do2 2 -di 2 )

若將該式加以變形時,則成為If the formula is deformed, it becomes

do2=√[(0.6/0.5)×do12 -(0.1/0.5)×di2 ]。Do2=√[(0.6/0.5)×do1 2 -(0.1/0.5)×di 2 ].

以下,假設導電針徑di為0.1mm,且探針1A之最外徑do1為0.2mm作說明。此時,Hereinafter, the conductive needle diameter di is assumed to be 0.1 mm, and the outermost diameter do1 of the probe 1A is 0.2 mm. at this time,

do2=√[(0.6/0.5)×0.22 -(0.1/0.5)×0.12 ]=0.214。Do2=√[(0.6/0.5)×0.2 2 -(0.1/0.5)×0.1 2 ]=0.214.

因此,do2:do1=0.214:0.2=1.07:1.0。Therefore, do2:do1=0.214:0.2=1.07:1.0.

亦即,為了得到同一電氣特性,習知構造中則必須具有第1實施形態之構造之1.07倍的外徑。That is, in order to obtain the same electrical characteristics, it is necessary to have an outer diameter of 1.07 times the structure of the first embodiment in the conventional structure.

然而,以上說明中,雖將具有最大發泡度(50%)之習知構造的最外徑與具有最小孔隙率(60%)之第1實施形態之探針1A的最外徑加以比較,但在習知構造中一般所使用之絕緣體的發泡度係48%,而在本實施形態中預測一般所使用之絕緣體3A的孔隙率則為61%。以上述計算式來比較該一般構成時,則為do2:do1=1.1:1.0,為了得到同一電氣特性,習知構造中則必須具有第1實施形態之構造之1.1倍的外徑。However, in the above description, the outermost diameter of the conventional structure having the maximum degree of foaming (50%) is compared with the outermost diameter of the probe 1A of the first embodiment having the smallest porosity (60%). However, the degree of foaming of the insulator generally used in the conventional structure is 48%, and in the present embodiment, it is predicted that the porosity of the insulator 3A generally used is 61%. When the general configuration is compared with the above calculation formula, it is do2:do1=1.1:1.0, and in order to obtain the same electrical characteristics, it is necessary to have an outer diameter of 1.1 times the structure of the first embodiment in the conventional structure.

(第1實施形態之變形例)(Modification of the first embodiment)

第1實施形態亦可以下述形態來實施。The first embodiment can also be implemented in the following aspects.

(1)導電針2A之前端形狀,除了如上述第1實施形態之說明般裁切成扁平之形狀以外,亦可對應檢查對象而任意設定成例如圖6A所示之錐狀形狀的導電針2A’、或圖6B所示之鉤形形狀的導電針2A’’等。(1) The shape of the front end of the conductive needle 2A can be arbitrarily set to a tapered shape of the conductive needle 2A as shown in Fig. 6A, in addition to the shape of the flat shape as described in the first embodiment. ', or the hook-shaped conductive needle 2A'' shown in Fig. 6B or the like.

(2)視須要導電針2A可使用實施鍍金之鎢絲。(2) A gold-plated tungsten wire may be used as the conductive pin 2A is required.

(3)亦可捲繞銅合金帶以形成外部導體4A。(3) The copper alloy ribbon may also be wound to form the outer conductor 4A.

(4)透孔6A之數目並不限於上述第1實施形態之說明之數目,亦可為4個、8個等偶數個、或5個、7個等奇數個。(4) The number of the through holes 6A is not limited to the number described in the first embodiment, and may be an even number of four or eight, or an odd number of five or seven.

(5)亦可將透孔6A之橫截面形成為圓形或多角形來實施。(5) The cross section of the through hole 6A may be formed into a circular shape or a polygonal shape.

(6)上述第1實施形態之說明中,雖將放射狀肋部3Ac形成為與導電針2A之軸心平行之直線狀,不過亦可為沿導電針2A之長邊方向連續成和緩之螺旋狀。(6) In the above description of the first embodiment, the radial ribs 3Ac are formed in a straight line parallel to the axis of the conductive needle 2A, but may be continuous and gentle in the longitudinal direction of the conductive needle 2A. shape.

(第2實施形態)(Second embodiment)

以下,根據圖式說明幾種本發明之第2實施形態。圖7~圖10係表示本發明之第2實施形態之探針1B,圖7係探針1B之外觀立體圖,圖8係縱截前視圖,圖9係其主要部位的放大前視圖,圖10係其橫截俯視圖。Hereinafter, several second embodiments of the present invention will be described based on the drawings. 7 to 10 are views showing a probe 1B according to a second embodiment of the present invention, and Fig. 7 is an external perspective view of the probe 1B, Fig. 8 is a longitudinal sectional front view, and Fig. 9 is an enlarged front view of a main part thereof, Fig. 10 It is a cross-sectional top view.

探針1B具備導電針2B、中心插通該導電針2B之絕緣體3B、與導電針2B同軸圍繞配置於絕緣體3B之外周的外部導體4B、及用以覆蓋外部導體4B之外周且作為絕緣外皮的捲帶層5B,並構成為軸心方向之長度約為20mm、外徑為0.3mm以下的極細線狀。The probe 1B includes a conductive pin 2B, an insulator 3B that is inserted through the conductive pin 2B at the center, an outer conductor 4B that is disposed around the outer periphery of the insulator 3B coaxially with the conductive pin 2B, and an outer sheath that covers the outer periphery of the outer conductor 4B and serves as an insulating sheath. The tape winding layer 5B is formed in an extremely thin line shape having a length of about 20 mm in the axial direction and an outer diameter of 0.3 mm or less.

導電針2B係以由鎢或鎢合金構成之直徑約為0.1mm之鎢絲所形成,本例中構成檢測端之下端係形成為扁平。外部導體4B係將由20數條直徑為0.03mm之鍍錫之銅合金細線所構成之導線4Ba加以和緩螺旋捲繞而形成。The conductive needle 2B is formed of a tungsten wire having a diameter of about 0.1 mm made of tungsten or a tungsten alloy. In this example, the lower end of the detecting end is formed flat. The outer conductor 4B is formed by winding and winding a wire 4Ba composed of 20 pieces of tin-plated copper alloy thin wires having a diameter of 0.03 mm.

絕緣體3B係將由PFA(四氟乙烯‧全氟烷基乙烯基醚共聚物)、FEP(四氟乙烯‧六氟丙烯共聚物)等樹脂材料構成之發泡率為數十%之發泡材料加以擠壓成形而形成。The insulator 3B is a foamed material composed of a resin material such as PFA (tetrafluoroethylene/perfluoroalkyl vinyl ether copolymer) or FEP (tetrafluoroethylene/hexafluoropropylene copolymer) and having a foaming ratio of several tens%. It is formed by extrusion molding.

作為絕緣外皮之捲帶層5B,係將厚度為0.004mm之PET帶,以捲帶寬度w之1/2(參照圖9)重覆之間距,與形成外部導體4C之導體4Ba之螺旋捲繞方向相反之方向螺旋捲繞(1/2重疊捲繞)而形成。以此方式,1/2重疊捲繞之捲帶層5B的外周面,即呈無捲繞段差之平滑面。又,於捲帶層5B之背面(內面)形成有熱熔接層20,藉由重疊捲繞處理後之加熱或一邊加熱之重疊捲繞處理,使捲帶層5B以較高之密合性捲繞於外部導體4B。As the tape layer 5B of the insulating sheath, a PET tape having a thickness of 0.004 mm is spirally wound with a 1/2 of the tape width w (refer to FIG. 9) and a spiral of the conductor 4Ba forming the outer conductor 4C. It is formed by spiral winding (1/2 overlap winding) in the opposite direction. In this way, the outer peripheral surface of the 1/2 overlap-wound web layer 5B is a smooth surface having no winding step difference. Further, the heat-fusible layer 20 is formed on the back surface (inner surface) of the tape layer 5B, and the tape winding layer 5B has a high adhesion by the heating after the winding process or the overlapping winding process while heating. It is wound around the outer conductor 4B.

此外,如圖9等所示,本發明中1/2重疊捲繞表現之捲帶層5B的捲繞構造,係指一邊將藉由捲繞而相鄰之捲帶層5B以1/2捲帶寬度彼此相積層,一邊捲繞捲帶層5B而成的構造。因此,捲繞後之捲帶層5B中,在所有截面捲帶厚度係成為原捲帶厚度之2倍的狀態,且捲帶表面係呈無段差之平滑面。Further, as shown in Fig. 9 and the like, in the present invention, the winding structure of the winding layer 5B in which the 1/2 overlap winding is expressed means that the tape layer 5B adjacent to each other by winding is 1/2. A structure in which the belt widths are laminated to each other and the winding layer 5B is wound. Therefore, in the wound tape layer 5B after winding, the tape thickness of all the cross-sections is twice as large as the thickness of the original tape, and the surface of the tape is a smooth surface having no step.

第2實施形態之探針1B係以上述方式所構成,如圖4所示,將導通連接於檢查裝置8之一對探針1B之各導電針2B的前端,抵接在裝載於基板9之IC晶片10的輸入輸出端子、或基板9之既定線路部位,並將高頻檢查訊號施加於兩探針1B,以進行電路之特性檢查。The probe 1B of the second embodiment is configured as described above, and as shown in FIG. 4, the distal end of each of the conductive pins 2B connected to the probe 1B of one of the inspection devices 8 is electrically connected to the substrate 9 The input/output terminal of the IC chip 10 or the predetermined line portion of the substrate 9 is applied to the two probes 1B to perform characteristic inspection of the circuit.

圖11A、圖11B係表示進行上述特性檢查時之探針1B的支持構造。此時,探針1B係保持成鉛垂姿勢,貫通支持涵蓋於上方之固定板11與下方之滑板12,探針1B之上部基端側為插通固定於固定板11,且探針1B之下部檢查端側為可上下滑動地插通支持於滑板12。11A and 11B show the support structure of the probe 1B when the above-described characteristic inspection is performed. At this time, the probe 1B is held in a vertical posture, and the support plate 11 and the lower slide plate 12 which are covered by the upper support are penetrated, and the base end side of the upper portion of the probe 1B is inserted and fixed to the fixed plate 11 and the probe 1B is The lower inspection end side is slidably supported by the slide plate 12 so as to be slidable up and down.

將探針1B支持成鉛垂姿勢之固定板11與滑板12,係以彼此之上下間隔為固定之狀態一體升降,使所支持之探針1B相對於檢查對象S接近及離開移動。The fixing plate 11 and the slide plate 12 which support the probe 1B in the vertical posture are integrally lifted and lowered in a state in which the upper and lower intervals are fixed, and the supported probe 1B is moved toward and away from the inspection object S.

一體升降之固定板11與滑板12,係在探針1B之導電針2B的下端(檢查端)接觸於檢查對象S之後,亦以既定量接近移動於檢查對象S。此時,如圖11B所示,對檢查對象S之按壓作用力即朝向上方作用於探針1B,藉由該按壓作用力,探針1B之下部便相對於滑板12滑動位移至上方,使探針1B在固定板11與滑板12之間彈性彎折變形,藉由該彈性復原力而使導電針2B之下端(檢查端)以既定接觸壓力按壓於檢查對象S。The fixed plate 11 and the slide plate 12 that are integrally lifted and lowered are brought into contact with the inspection object S by a predetermined amount after the lower end (inspection end) of the conductive needle 2B of the probe 1B contacts the inspection object S. At this time, as shown in FIG. 11B, the pressing force applied to the inspection object S is applied upward to the probe 1B, and the lower portion of the probe 1B is slidably displaced upward relative to the slider 12 by the pressing force. The needle 1B is elastically bent and deformed between the fixed plate 11 and the slide plate 12, and the lower end (inspection end) of the conductive needle 2B is pressed against the inspection object S with a predetermined contact pressure by the elastic restoring force.

此處,由於探針1B之外周面,亦即捲帶層5B之外周面係呈無捲繞段差之平滑面,因此如上述般在探針1B之下部相對於滑板12滑動位移至上方時,在與滑板12之貫通部位,探針1B之下部即可以較小阻力順利滑動位移。Here, since the outer peripheral surface of the probe 1B, that is, the outer peripheral surface of the take-up layer 5B is a smooth surface having no winding step difference, when the lower portion of the probe 1B is slidably displaced upward relative to the slider 12 as described above, In the penetration portion with the slide plate 12, the lower portion of the probe 1B can smoothly slide and slide with less resistance.

又,由於探針1B之絕緣外皮係以1/2重疊捲繞之捲帶層5B所構成,因此絕緣體3B即從外周被緊繞而結實地密合於導電針2B,以提高導電針2B之拉拔強度。又,探針1B之絕緣外皮係藉由1/2重疊捲繞以捲繞重疊成2層之捲帶層5B所形成,藉此提高探針1B整體之彎曲強度,如上述般在導電針2B之下端(檢查端)按壓於檢查對象S時,因該按壓作用力而大幅彎曲變形,以事先避免降低對檢查對象S之接觸壓力。Further, since the insulating sheath of the probe 1B is constituted by the winding layer 5B which is wound by 1/2 overlap, the insulator 3B is tightly wound from the outer periphery and is firmly adhered to the conductive needle 2B to improve the conductive needle 2B. Pull strength. Further, the insulating sheath of the probe 1B is formed by winding 1/2 overlap winding to wind up the two-layered tape layer 5B, thereby improving the overall bending strength of the probe 1B, as described above in the conductive pin 2B. When the lower end (inspection end) is pressed against the inspection target S, the pressing force is largely bent and deformed, so that the contact pressure with respect to the inspection target S is prevented from being lowered in advance.

(第3實施形態)(Third embodiment)

圖12~圖14係表示本發明之第3實施形態之探針1C,圖12係探針1C之外觀立體圖,圖13係縱截前視圖,而圖14係其橫截俯視圖。12 to 14 are views showing a probe 1C according to a third embodiment of the present invention, and Fig. 12 is an external perspective view of the probe 1C, Fig. 13 is a longitudinal sectional front view, and Fig. 14 is a cross-sectional plan view thereof.

本實施形態之探針1C具備導電針2C、中心插通導電針2C之絕緣體3C、與導電針2C同軸圍繞配置於絕緣體3C之外周的外部導體4C、及用以覆蓋外部導體4C之外周且作為絕緣外皮的捲帶層5C,絕緣體3C以外之構成則係與第2實施形態相同。The probe 1C of the present embodiment includes a conductive pin 2C, an insulator 3C in which the conductive pin 2C is inserted in the center, an outer conductor 4C that is disposed around the outer periphery of the insulator 3C coaxially with the conductive pin 2C, and a periphery for covering the outer conductor 4C. The tape winding layer 5C of the insulating sheath and the structure other than the insulator 3C are the same as those of the second embodiment.

本實施形態之絕緣體3C係由PFA(四氟乙烯‧全氟烷基乙烯基醚共聚物)等樹脂材料所構成,並形成為具備對導電針2C覆蓋外周面而設置的內層體3Ca、覆蓋外部導體4C之內周面而設置的外層體3Cb、及從內層體3Ca朝向徑方向外側放射狀突出且連結於外層體3Cb之內周側之複數個放射狀肋部3Cc的蜂巢構造。此外,以內層體3Ca、外層體3Cb、及放射狀肋部3Cc所圍繞之橫截面形狀為扇形之6個透孔6C,係以圓周方向等間距配置形成,且各透孔6C係貫通於導電針軸心方向並在絕緣體3C之上下端呈開放狀態,該絕緣體3C之孔隙率為60%以上。The insulator 3C of the present embodiment is made of a resin material such as PFA (tetrafluoroethylene/perfluoroalkyl vinyl ether copolymer), and is formed to have an inner layer body 3Ca provided to cover the outer peripheral surface of the conductive needle 2C, and to cover The outer layer body 3Cb provided on the inner peripheral surface of the outer conductor 4C and the honeycomb structure in which the inner layer body 3Ca radially protrudes outward in the radial direction and are connected to the plurality of radial ribs 3Cc on the inner peripheral side of the outer layer body 3Cb. Further, the six through holes 6C having a fan-shaped cross-sectional shape surrounded by the inner layer body 3Ca, the outer layer body 3Cb, and the radial rib portion 3Cc are formed at equal intervals in the circumferential direction, and each of the through holes 6C is penetrated through the conductive The needle axial direction is open at the lower end of the insulator 3C, and the porosity of the insulator 3C is 60% or more.

根據該絕緣體構造,由於藉由透孔6C所形成之空氣絕緣層係連續於軸心方向,因此即使在數GHz以上之高頻區域亦可進行良好之訊號收授。According to this insulator structure, since the air insulating layer formed by the through hole 6C is continuous in the axial direction, good signal reception can be performed even in a high frequency region of several GHz or more.

又,導電針2C在其大致全長係以絕緣體3C之內層體3Ca支持,且絕緣體3C係從外周以捲帶層5C緊繞成2層,藉此使導電針2C與絕緣體3C結實地密合,以提高導電針2C之拉拔強度。Further, the conductive needle 2C is supported by the inner layer body 3Ca of the insulator 3C over substantially the entire length thereof, and the insulator 3C is wound into two layers from the outer circumference by the winding layer 5C, whereby the conductive needle 2C is firmly adhered to the insulator 3C. To increase the drawing strength of the conductive needle 2C.

分別測量具備捲帶層5C之本實施形態之構造之拉拔強度與習知構造(未具備由捲帶層5C所構成之絕緣外皮)之拉拔強度的結果,係如以下所示。亦即,習知構造之拉拔強度係1.04N。相對於此,本實施形態之構造的拉拔強度係1.93N。在該測量結果亦可知藉由採用本實施形態之構造即可提升拉拔強度。此外,上述測量中,亦測量具有20.0mm之長度之兩構造(導電針)的拉拔強度。The drawing strength of the structure of the present embodiment including the winding layer 5C and the drawing strength of the conventional structure (the insulating sheath not including the winding layer 5C) were measured as follows. That is, the pull strength of the conventional structure is 1.04N. On the other hand, the drawing strength of the structure of this embodiment is 1.93N. It can also be seen from the measurement results that the drawing strength can be improved by adopting the configuration of the embodiment. Further, in the above measurement, the drawing strength of the two structures (conductive needles) having a length of 20.0 mm was also measured.

[第2、第3實施形態之變形例][Modification of Second and Third Embodiments]

此等之實施形態亦可以下述形態來實施。These embodiments can also be implemented in the following forms.

(1)導電針2B,2C之檢查用前端部的形狀,並不限於如上述般裁切成扁平之形狀者,亦可對應檢查對象而任意將前端部設定成例如錐狀之形狀、或將前端部彎曲成鉤形之形狀等。(1) The shape of the distal end portion for the inspection of the conductive needles 2B and 2C is not limited to the shape that is cut into a flat shape as described above, and the distal end portion may be arbitrarily set to a tapered shape or a shape corresponding to the object to be inspected. The front end portion is bent into a hook shape or the like.

(2)視須要導電針2B,2C可使用實施鍍金之鎢絲。(2) A tungsten-plated tungsten wire may be used as the conductive pin 2B, 2C.

(3)亦可捲繞銅合金帶以形成外部導體4B,4C。(3) The copper alloy strip may also be wound to form the outer conductors 4B, 4C.

(4)形成於絕緣體3B,3C之透孔6B,6C之數目並不限於上述構成之數目,亦可為4個、8個等偶數個、或5個、7個等奇數個。(4) The number of the through holes 6B, 6C formed in the insulators 3B, 3C is not limited to the number of the above-described configurations, and may be an odd number of four or eight, or an odd number of five or seven.

1A‧‧‧探針1A‧‧‧Probe

2A‧‧‧導電針2A‧‧‧conductive needle

3A‧‧‧絕緣體3A‧‧‧Insulator

4A‧‧‧外部導體4A‧‧‧External conductor

6A‧‧‧透孔6A‧‧‧through hole

1B‧‧‧探針1B‧‧‧Probe

2B‧‧‧導電針2B‧‧‧conductive needle

3B‧‧‧絕緣體3B‧‧‧Insulator

4B‧‧‧外部導體4B‧‧‧External conductor

5B‧‧‧捲帶層5B‧‧‧ tape layer

1C‧‧‧探針1C‧‧‧ probe

2C‧‧‧導電針2C‧‧‧conductive needle

3C‧‧‧絕緣體3C‧‧‧Insulator

3Ca‧‧‧內層體3Ca‧‧‧ inner layer

3Cb‧‧‧外層體3Cb‧‧‧Outer body

3Cc‧‧‧放射狀肋部3Cc‧‧‧radial ribs

4C‧‧‧外部導體4C‧‧‧External conductor

5C‧‧‧捲帶層5C‧‧‧ tape layer

圖1係本發明之第1實施形態之探針的外觀立體圖。Fig. 1 is an external perspective view of a probe according to a first embodiment of the present invention.

圖2係第1實施形態之探針的縱截前視圖。Fig. 2 is a longitudinal sectional front view of the probe of the first embodiment.

圖3係第1實施形態之探針的橫截面圖。Fig. 3 is a cross-sectional view showing the probe of the first embodiment.

圖4係本發明之各實施形態之使用形態的概略構成圖。Fig. 4 is a schematic block diagram showing a form of use of each embodiment of the present invention.

圖5係表示本發明之各實施形態之位置檢測形態的概略圖。Fig. 5 is a schematic view showing a position detection mode according to each embodiment of the present invention.

圖6A係表示導電針前端形狀不同之變形例之主要部位的縱截前視圖。Fig. 6A is a longitudinal sectional front view showing a main part of a modification in which the shape of the tip end of the conductive needle is different.

圖6B係表示導電針前端形狀不同之變形例之主要部位的縱截前視圖。Fig. 6B is a longitudinal sectional front view showing a main part of a modification in which the shape of the tip end of the conductive needle is different.

圖7係本發明之第2實施形態之探針的外觀立體圖。Fig. 7 is a perspective view showing the appearance of a probe according to a second embodiment of the present invention.

圖8係第2實施形態之探針的縱截前視圖。Fig. 8 is a longitudinal sectional front view of the probe of the second embodiment.

圖9係放大第2實施形態之探針之一部分的前視圖。Fig. 9 is a front elevational view showing an enlarged portion of a probe of the second embodiment.

圖10係第2實施形態之探針的橫截俯視圖。Fig. 10 is a cross-sectional plan view of the probe of the second embodiment.

圖11A係表示第2實施形態之探針之支持構造之第1狀態的概略前視圖。Fig. 11A is a schematic front view showing a first state of a support structure of a probe according to a second embodiment.

圖11B係表示第2實施形態之探針之支持構造之第2狀態的概略前視圖。Fig. 11B is a schematic front view showing a second state of the support structure of the probe according to the second embodiment.

圖12係本發明之第3實施形態之探針的外觀立體圖。Fig. 12 is a perspective view showing the appearance of a probe according to a third embodiment of the present invention.

圖13係第3實施形態之探針的縱截前視圖。Fig. 13 is a longitudinal sectional front view of the probe of the third embodiment.

圖14係第3實施形態之探針的橫截俯視圖。Figure 14 is a cross-sectional plan view of the probe of the third embodiment.

1A...探針1A. . . Probe

2A...導電針2A. . . Conductive needle

3A...絕緣體3A. . . Insulator

4A...外部導體4A. . . External conductor

5A...絕緣外皮5A. . . Insulating skin

6A...透孔6A. . . Through hole

Claims (11)

一種探針,其具備:導電針;絕緣體,係配置於該導電針周圍;以及外部導體,與該導電針同軸配置於該絕緣體之外周;於該絕緣體設置貫通該導電針之軸心方向的透孔;該絕緣體之孔隙率在60%以上。 A probe comprising: a conductive pin; an insulator disposed around the conductive pin; and an outer conductor disposed coaxially with the conductive pin on an outer circumference of the insulator; wherein the insulator is provided through the axis of the conductive pin Hole; the porosity of the insulator is above 60%. 如申請專利範圍第1項之探針,其中,將該透孔設置於該導電針周圍之複數個部位。 The probe of claim 1, wherein the through hole is disposed at a plurality of locations around the conductive pin. 如申請專利範圍第2項之探針,其中,將複數個該透孔配置於相對該導電針之軸心呈點對稱之位置。 The probe of claim 2, wherein the plurality of through holes are disposed at a point symmetry with respect to an axis of the conductive pin. 如申請專利範圍第1項之探針,其中,該導電針係由含鎢合金之鎢材構成。 The probe of claim 1, wherein the conductive needle is made of a tungsten material containing a tungsten alloy. 如申請專利範圍第1項之探針,其中,該絕緣體,具備:內層體,對該導電針覆蓋外周面而設置;外層體,覆蓋該外部導體之內周面而設置;以及複數個放射狀肋部,從該內層體朝向直徑方向外側放射狀突出,且連結於該外層體之內周側;將該放射狀肋部連續設置於該導電針之長邊方向。 The probe according to claim 1, wherein the insulator comprises: an inner layer body provided to cover the outer peripheral surface of the conductive needle; an outer layer body provided to cover an inner peripheral surface of the outer conductor; and a plurality of radiation The rib portion radially protrudes outward from the inner layer body in the radial direction, and is coupled to the inner peripheral side of the outer layer body, and the radial rib portion is continuously provided in the longitudinal direction of the conductive needle. 如申請專利範圍第1項之探針,其中,於該外部導體之外周面配置螺旋捲繞之捲帶層作為絕緣外皮,且以1/2重疊捲繞形成該捲帶層。 The probe according to claim 1, wherein the spirally wound tape layer is disposed as an insulating sheath on the outer peripheral surface of the outer conductor, and the tape layer is formed by 1/2 overlap winding. 如申請專利範圍第6項之探針,其中,螺旋捲繞多 數條導線以形成該外部導體,且使該捲帶層之螺旋捲繞方向與該導線之螺旋捲繞方向為反向。 For example, the probe of the sixth application patent scope, in which the spiral winding is more A plurality of wires are formed to form the outer conductor, and the spiral winding direction of the tape layer is opposite to the spiral winding direction of the wire. 如申請專利範圍第6項之探針,其中,於該捲帶層之背面設置熱熔接層。 A probe according to claim 6 wherein a heat-fusible layer is provided on the back side of the tape layer. 一種探針支持構造,係支持申請專利範圍第6項之探針,其特徵在於:將該探針之基端側固定支持於固定板,使該探針之檢查端側可滑動地貫通支持於滑板,使已固定間隔之該固定板與滑板相對檢查對象接近離開,以使該探針之檢查端接觸按壓於檢查對象。 A probe supporting structure for supporting the probe of claim 6 is characterized in that: the base end side of the probe is fixedly supported on the fixing plate, so that the inspection end side of the probe is slidably supported through The sliding plate causes the fixed plate and the sliding plate to be close to the inspection object so that the inspection end of the probe contacts the inspection object. 一種探針,其具備:導電針;外部導體,係透過間隙同軸配置於與該導電針之間;以及絕緣體,係設於該間隙;該絕緣體,具備:內層體,對該導電針覆蓋外周面而設置;外層體,覆蓋該外部導體之內周面而設置;以及複數個放射狀肋部,從該內層體朝向直徑方向外側放射狀突出,且連結於該外層體之內周側;將該放射狀肋部連續設置於該導電針之長邊方向。 A probe comprising: a conductive pin; an outer conductor disposed coaxially with the conductive pin through a gap; and an insulator disposed in the gap; the insulator having: an inner layer body covering the outer circumference of the conductive pin Providing a surface; an outer layer covering the inner peripheral surface of the outer conductor; and a plurality of radial ribs projecting radially outward from the inner layer body and connected to an inner peripheral side of the outer layer body; The radial rib is continuously disposed in the longitudinal direction of the conductive needle. 一種探針,其具備:導電針;外部導體,係透過間隙同軸配置於與該導電針之間; 以及絕緣體,係設於該間隙;於該外部導體之外周面配置螺旋捲繞之捲帶層作為絕緣外皮,且以1/2重疊捲繞形成該捲帶層。a probe comprising: a conductive pin; an outer conductor disposed coaxially with the conductive pin through the gap; And an insulator is disposed in the gap; a spirally wound tape layer is disposed as an insulating sheath on the outer peripheral surface of the outer conductor, and the tape layer is formed by overlapping winding at 1/2.
TW97149566A 2007-12-28 2008-12-19 Probe and probe support construction TWI426273B (en)

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JP2007339251A JP5081613B2 (en) 2007-12-28 2007-12-28 Probe pin
JP2008289747A JP2010117209A (en) 2008-11-12 2008-11-12 Probe pin
JP2008305971A JP2010127879A (en) 2008-12-01 2008-12-01 Probe pin and its support structure

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