JP2003232806A - Probe needle and measuring device using probe needle - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a probe needle capable of accurate measurement by preventing a noise received from the outside during measurement of an electric characteristic of a semiconductor chip or its wafer, and by reducing trapping of charge even at the measuring time at a high temperature. <P>SOLUTION: This probe needle 20 used for measurement of the electric characteristic of a measuring object in contact with the measuring object is equipped with a core wire 40 for acquiring an electric signal in contact with the measuring object, and an external conductor 22 for covering the core wire excepting a part of the core wire. In the probe needle 20, an electrical insulating layer 26 comprising the air is formed between the external conductor 22 and the core wire 40. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a probe needle for measuring electrical characteristics of an object to be measured and a measuring device using the probe needle.

[0002]

2. Description of the Related Art Generally, a semiconductor wafer such as a semiconductor wafer and a semiconductor chip such as an IC (semiconductor integrated circuit device) or an LSI (large scale integrated circuit) using the semiconductor wafer is generally measured. Then, the probe needle is brought into contact with the pads or leads of the semiconductor wafer or semiconductor chip. Since the conventional probe needle is composed of a single needle-shaped conductor, it is easily affected by noise from the outside during measurement of the electrical characteristics of the DUT. Was difficult.

FIG. 16 shows such a semiconductor wafer 10
It is a figure devised in order to prevent being influenced by noise from the outside during the measurement of the electrical characteristics of 0. See also FIG.
7 is a sectional view taken along the line AA of FIG.
It is a figure which shows the structure of. In FIG. 16, a probe needle 120 made of a conductor such as W (tungsten) is brought into contact with the pad 110 provided on the semiconductor wafer 100 of the object to be measured, and the electrical characteristics of the semiconductor wafer 100 are measured. At the time of this measurement, the semiconductor wafer 100 is heated by the heater 130 in order to expose the degree of failure rate of the semiconductor wafer 100 and potential failure factors. Then, the core wire 122 is brought into contact with the heated pad 110, and the electrical characteristics of the semiconductor wafer 100 are measured.

Here, the structure of the probe needle 120 is as follows.
As shown in FIG. 17, the core wire 122 is connected to the probe needle 12
The core wire 122 is arranged at the center of 0, and the periphery of the core wire 122 is covered with an electric insulator material 124 made of Teflon (registered trademark) or the like.
The structure is covered with. That is, by disposing the electrical insulator material 124 between the core wire 122 and the conductive material 126, the conductive material 1 is measured during the measurement of the semiconductor wafer 100.
An attempt is made to suppress the generation of noise due to the intrusion of an unnecessary current from 26 to the core wire 122 side.

[0005]

By the way, in recent years, electronic devices have been required to be smaller and thinner, and when the electronic devices are made smaller and thinner, the semiconductor chips used in the electronic devices are also made smaller. In addition to the demand for smaller and thinner semiconductor chips at present, higher processing capability is required for their processing capability. In order to meet these demands, a high-quality semiconductor chip, which is extremely small and operates with low power consumption, has been developed. However, such a high-quality semiconductor chip causes a malfunction even if a slight leak current of femtoampere (fA) unit is generated in the semiconductor wafer. Therefore, if the measuring device using the probe needle cannot measure even this slight leak,
It will be difficult to develop high-quality semiconductor chips and to stably supply them to the market.

On the other hand, as described above, in the probe needle 120 having a structure in which the core wire 122 is covered with the electric insulating material 124 made of Teflon (registered trademark) or the like, even if the influence of external noise can be prevented, the Teflon material can be prevented. A minute electric charge is trapped in the electric insulator material 124 made of (registered trademark) or the like, which may cause an unwanted current to enter the core wire 122 and generate noise. In particular, 100 degrees Celsius
At the time of measurement at a high temperature of 150 ° C. to 150 ° C., charges are trapped in the electric insulator material 124, and for example, 1
A small current of 00fA was generated and became a noise source. Therefore, the probe needle 1 in which the core wire 122 is coated with the electric insulator material 124 made of Teflon (registered trademark) or the like
20 using the high-quality semiconductor wafer 1 as described above.
However, even if an electric characteristic such as 00 is measured, it becomes difficult to measure with a minute current or a high frequency.

The object of the present invention is to solve the above-mentioned problems, to prevent noise received from the outside during the measurement of the electrical characteristics of a semiconductor chip or a semiconductor wafer, and during measurement at high temperature. Another object of the present invention is to provide a probe needle and a measuring device using the probe needle, which suppresses noise generated due to trapping of electric charges and enables accurate measurement.

[0008]

According to the invention of claim 1, the above object is to provide a probe needle which is used for measuring an electrical characteristic of the object to be measured by contacting the object to be measured. An electrical insulating layer that includes a core wire that contacts an object to be measured to obtain an electric signal, and a conductive outer body that covers the core wire except a part of the core wire, and that is made of air between the outer body and the core wire. Is achieved by a probe needle.

According to the structure of claim 1, an electric insulating layer made of air is provided between the core wire for obtaining an electric signal and the external body covering a part of the core wire. Therefore, even if a current flows through an external body during electrical measurement of an object to be measured such as a semiconductor wafer, there is an electrically insulating layer made of air, and this current prevents external noise generated by affecting the core wire. can do. Further, since the electric insulating layer existing around the core wire is made of air, even when the measurement is performed at a high temperature of 100 ° C. to 150 ° C., electric charges are trapped like an electric insulating material made of a tangible material. There is no such thing. This prevents noise received from the outside during measurement of electrical characteristics of an object to be measured such as a semiconductor chip or a semiconductor wafer, and further suppresses trapping of charges even at the time of measurement at high temperature, It is possible to provide a probe needle that enables accurate measurement.

According to the invention of claim 2, claim 1
In the above configuration, the electrically insulating layer made of air is a first electrically insulating layer, and a second electrically insulating layer is provided between the outer body and the first electrically insulating layer and on the inner surface of the outer body. Is provided. According to the configuration of claim 2,
A second electrically insulating layer is arranged between the outer body and the first electrically insulating layer. That is, the second electrically insulating layer is provided inside the outer body. As a result, the same effect as in claim 1 is exerted, and even when the core wire comes into contact with the external body, the influence of the current flowing through the external body on the core wire is further prevented, and the object to be measured is prevented. It is possible to prevent noise during electric characteristic measurement. The second electrically insulating layer also protects the inner wall of the outer body.

According to the invention of claim 3, claim 1
In the configuration described above, an electrically insulating support member for supporting the core wire is provided between the core wire and the external body. According to the structure of claim 3, a support member that supports the core wire is provided between the core wire and the external body. That is, it is necessary to arrange the core wire in a so-called hollow shape in order to form the electrical insulating layer made of air between the core wire and the external body, and therefore, the core wire is supported by the supporting member. As a result, the same effect as that of the first aspect can be achieved, and the core wire can be surely arranged in the hollow shape by the supporting member to form the electrically insulating layer made of air.

Further, according to the invention of claim 4, claim 3
In the above configuration, at least a part of the support member seals the open end of the external body. As a result, the invention of claim 4 exhibits the same effect as that of claim 3, prevents floating substances such as dust from entering the electrically insulating layer of air from the outside, and separates it from the support member. Since it is not necessary to provide a new sealing material, the number of parts can be reduced.

Further, according to the invention of claim 5, there is provided a measuring device using a probe needle which is in contact with an object to be measured and is used for measuring an electrical characteristic of the object to be measured,
The probe needle includes a core wire that comes into contact with the object to be measured to obtain an electric signal, and a conductive outer body that covers the core wire except a part of the core wire, and between the outer body and the core wire. And an electrical insulating layer made of air are formed on the measuring device.

According to the structure of the fifth aspect, the probe needle used in the measuring device is provided with an electric insulating layer made of air between a core wire for obtaining an electric signal and an external body covering a part of the core wire. ing. Therefore, even if a current flows through an external body during electrical measurement of an object to be measured such as a semiconductor wafer, there is an electrically insulating layer made of air, and this current prevents external noise generated by affecting the core wire. can do. Further, since the electric insulating layer existing around the core wire is made of air, even when the measurement is performed at a high temperature of 100 ° C. to 150 ° C., electric charges are trapped like an electric insulating material made of a tangible material. There is no such thing. This prevents noise received from the outside during measurement of electrical characteristics of an object to be measured such as a semiconductor chip or a semiconductor wafer, and further suppresses trapping of charges even at the time of measurement at high temperature, A measuring device using a probe needle that enables accurate measurement can be provided.

According to the invention of claim 6, claim 5
In the above configuration, the electrically insulating layer made of air is a first electrically insulating layer, and a second electrically insulating layer is provided between the outer body and the first electrically insulating layer and on the inner surface of the outer body. Is provided. According to the configuration of claim 6,
A second electrically insulating layer is arranged between the outer body and the first electrically insulating layer. That is, the second electrically insulating layer is provided inside the outer body. Thus, the same effect as in claim 5 is exhibited, and even when the core wire comes into contact with the external body, the influence of the current flowing through the external body on the core wire is further prevented, and the object to be measured is prevented. It is possible to prevent noise during electric characteristic measurement. The second electrically insulating layer also protects the inner wall of the outer body.

According to the invention of claim 7, claim 5
In the configuration described above, an electrically insulating support member for supporting the core wire is provided between the core wire and the external body. According to the configuration of claim 7, a support member that supports the core wire is provided between the core wire and the external body. That is, it is necessary to arrange the core wire in a so-called hollow shape in order to form the electrical insulating layer made of air between the core wire and the external body, and therefore, the core wire is supported by the supporting member. As a result, the same effect as in claim 5 is exerted, and the core wire can be surely arranged in the hollow shape by the supporting member to form the electrically insulating layer made of air.

According to the invention of claim 8, claim 7 is provided.
In the above configuration, at least a part of the support member seals the open end of the external body. As a result, the invention of claim 8 exhibits the same effect as that of claim 7, prevents floating substances such as dust from entering the electrical insulating layer made of air from the outside, and separates it from the support member. Since it is not necessary to provide a new sealing material, the number of parts can be reduced.

[0018]

BEST MODE FOR CARRYING OUT THE INVENTION Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings. The embodiment described below is a preferred specific example of the present invention,
Although various technically preferable limitations are given, the scope of the present invention is not limited to these forms unless otherwise specified in the description below.

FIG. 1 is a schematic block diagram of a measuring apparatus having a probe needle according to this embodiment. Further, FIG. 2 is a schematic perspective view in which the probe needle is brought into contact with the object to be measured. In FIG. 1 and FIG. 2, the object to be measured is a semiconductor wafer 1 obtained by cutting a silicon wafer by dicing, for example, and a plurality of pads 2, 2, 2 for inputting and outputting electric signals are provided on the semiconductor wafer 1. It is provided. 1 and 2, the measuring device 10 measures the electrical characteristics of the semiconductor wafer 1. However, in the present invention, the measuring device 10 is not limited to this as long as it measures the electrical characteristics. It may also be used to measure the electrical characteristics of a semiconductor device or the like using this semiconductor wafer 1.

In the measuring device 10 of this embodiment, the chuck 6 and the heating / cooling device 7 are provided as elements for adjusting the measurement environment.
And a controller 8 are arranged. The chuck 6 is for fixing the semiconductor wafer 1. Specifically, there is a mounting surface 1A place on which the semiconductor wafer 1 is mounted on the chuck 6, and the mounting surface 1A is provided with, for example, a vacuum suction device 1B. The wafer 1 is vacuum-adsorbed and fixed on the mounting surface 1A. Further, the heating / cooling device 7 places the semiconductor wafer 1 in a high temperature environment or a low temperature environment in order to perform an accelerated life test for revealing the degree of defect rate of the semiconductor wafer 1 and potential defect factors. It is a device for. Specifically, the heating / cooling device 7 heats the semiconductor wafer 1 via the chuck 6 with a heater (not shown) or the like. Further, the controller 8 can control the heating and cooling temperatures of the heating / cooling device 7. Therefore, the electrical characteristics of the semiconductor wafer 1 can be measured under an arbitrary temperature environment.

Next, in the measuring apparatus 10, the probe needle 20 which is an element for contacting the pad 2 on the semiconductor wafer 1 to actually measure the electrical characteristics, the manipulator 50, and the measuring instrument 60 are arranged. Has been done. Probe needle 2
Reference numeral 0 includes a core wire 40 for contacting the pad 2 on the semiconductor wafer 1 to obtain an electric signal, and an external conductor 22 for cutting off the core wire 40 from the external space. The outer conductor 22 corresponds to an outer body.

The core wire 40 can obtain an electric signal from the pad 2, and has strength and elasticity for enabling stable measurement and the like. Therefore, the core wire 40 is made of a metal conductor such as tungsten, tungsten carbide, or beryllium kappa among the conductive metal conductors. Since the size of the pad 2 is also minimized as the size of the semiconductor device is minimized, the core wire 40 corresponds to the minimized pad 2 and has a diameter of, for example, 200 μm.
The end portion 40A of the core wire 40, which has a thickness of ˜300 μm and is in contact with the pad 2, is tapered.

The outer conductor 22 is an electrically conductive metal that covers the core wire 40 in a tubular shape except for a part of the core wire 40. As described above, by making the outer conductor 22 a metal capable of conducting electricity, even when an unnecessary current enters the probe needle 20,
The outer conductor 22 can serve as a so-called earth (ground) for releasing an unnecessary current through a manipulator 50 described later. The outer conductor 22 is a tubular member having an inner diameter larger than the diameter of the core wire 40. In the illustrated example, the outer conductor 22 having a circular cross section is open at both ends and is made of Ni (nickel), Cu (copper) or the like having a thickness of about several μm to several tens of μm.

As shown in FIGS. 1 and 2, the manipulator 50 includes a core wire 40 provided on the probe needle 20 described above.
Is a device for aligning so that the pad can be brought into contact with the pad 2. That is, as shown in FIG. 2, the manipulator 50 is provided with an arm 52 for fixing the probe needle 20. The manipulator 50 includes an X-axis micrometer head 53 as means for moving the arm 52 in the X-axis direction, a Y-axis micrometer head 54 as means for moving the arm 52, and a Z-axis micrometer as means for moving in the Z-axis direction. It has a head 55.
The manipulator 50 manually moves the probe needle 20 with respect to the semiconductor wafer 1 via the arm 52, but as shown in FIG.
6, the Y-axis motor 57 and the Z-axis motor 58 may be operated to automatically move the probe needle 20 via the arm 52.

At the rear end of the probe needle 20 shown in FIG.
The measuring instrument 60 is connected. This measuring instrument 60 measures and digitizes a minute current of the pad 2 from the probe needle 20.

Next, the structure of the probe needle 20 will be described with reference to FIGS. Figure 4 shows this probe needle 2
It is an expansion schematic perspective view of 0. FIG. 5A is BB of FIG.
FIG. 5 is a sectional end view taken along line C-C of FIG. 4. FIG. 6 is a sectional view taken along line DD of FIG. The probe needle 20 has a core wire 40, an outer conductor 22, and a support member 24. The core wire 40 is made of a metal conductor such as W (tungsten) as described above, and has an intermediate portion 40B, a portion 40D including the tip end portion 40A, and a connecting portion 40C electrically connected to the measuring instrument 60 side. However, it passes through the center along the center line CL of the outer conductor 22.

The outer conductor 22 is made of a metal such as Ni (nickel) or Cu (copper) capable of conducting electricity as described above, has open end portions 22A and 22B, and has an inner space larger than the diameter of the core wire 40. have. The outer conductor 22 is
It covers the intermediate portion 40B of the core wire 40.

The support member 24 is a member for fixing the core wire 40 at a predetermined position. That is, as shown in FIGS. 5A and 6, the support member 24 has the hole 2 at the center thereof.
The core 40 is fixed in a position passing through the center along the center line CL of the outer conductor 22 by passing the core 40 through the hole 24A. The support member 24 uses PBT (polybutylene terephthalate) or an electrically insulating material such as silicon resin or polyimide resin in order to prevent noise from being generated from the outer conductor 22 to the core wire 40 via the support member 24.

The support member 24 is formed by the outer conductor 2
The two open end portions 22A and 22B are arranged only. However, the support member 24 is not arranged in the intermediate portion of the outer conductor 22, as shown in FIGS. Therefore, the constant distance W1 is maintained between the outer conductor 22 where the supporting member 24 is not arranged and the core wire 40, whereby the electrical insulating layer 26 made of air is formed.

Then, even when a current flows through the outer conductor 22, the electrical insulating layer 26 made of air is used as the core wire 4.
The effect of this current on 0 is blocked. Further, the electric insulating layer 26 made of air does not trap charges even at a high temperature of 100 ° C. to 150 ° C., for example. Therefore, during measurement of the electrical characteristics of the semiconductor chip or the semiconductor wafer, the outer conductor 22 to the core wire 4 are
Since 0 does not receive a current, it is possible to suppress the trapping of charges during measurement at high temperature, and it is possible to accurately measure the electrical characteristics.

The support members 24 are provided only on the open ends 22A and 22B of the outer conductor 22, and the open ends 2 at both ends of the open ends 22A and 22B.
An electrically insulating layer 26 made of air is formed around the core wire 40 other than 2A and 22B. As described above, by reducing the locations where the support members 24 are arranged, it is possible to suppress the frequency of charge trapping in the support members 24 at a high temperature of 100 ° C. to 150 ° C. and reduce noise generation. Further, even if charges are trapped in the support member 24, the influence on the core wire 40 can be suppressed to the minimum. Preferably, the thickness W2 of the support member 24 is made as thin as possible to reduce noise generated by trapping charges in the support member 24 at high temperature.

Further, the open end portion 22A of the outer conductor 22 is
The support member 24 formed on 22B has an opening end 22A,
It is provided so as not to form a gap in 22B. That is, if the open end portions 22A and 22B of the outer conductor 22 are not sealed, there is a possibility that a floating substance or the like may be mixed into the air layer 26 from the outside. For example, it is necessary to make the tip end conical and cover the core wire 40. However, if a new sealing material is provided, noise may be generated through the sealing material. If the outer conductor 22 is formed, for example, on a cone, the outer conductor 22 directly contacts the core wire 40 and the An electric current may enter the core wire 40 from the conductor 22.

Therefore, the support member 24 not only fixes the position of the core wire 40, but also opens the end 22 of the outer conductor 22.
The electrical insulating layer 2 in which suspended matters and the like are air from the outside by also serving as a sealing material for sealing A and 22B
6 to prevent it from invading and reducing the electrical insulation,
It is possible to make the core wire less susceptible to noise. The support member 24 need not be arranged between the core wire 40 and the outer conductor 22, but may be arranged outside in contact with the cut surface of the open end 22A of the outer conductor 22, as shown in FIG. .

8 to 11 show each modification of the first embodiment. In these drawings, the same reference numerals as those used in describing the first embodiment are common to each other, and therefore, overlapping description will be omitted and different points will be mainly described. 8 and 9 show a first modification, FIG. 8 is a perspective view of a probe needle 20 showing the first modification, and FIG. 9 is a sectional view taken along line EE of FIG. FIG. 6 is a view for explaining the shape of a central support member 24a arranged at a position other than the end portion of the outer conductor 22. Specifically, in FIG. 8, as compared with FIG. 4, the outer conductor 22 and the core wire 40 are bent, and the supporting member 2 is provided in addition to the ends of the outer conductor 22.
The difference is that 4a is arranged. Further, the shape of the support member 24a is as shown in FIG.
The shape is different from that of the support member 24 shown in FIG.

That is, in order to bring the core wire 40 into contact with the surface of the pad 2 at a predetermined angle, the outer conductor 22 and the core wire 40 are bent in FIG. However, when the outer conductor 22 and the core wire 40 are bent, the position of the core wire 40 becomes unstable, and the outer conductor 22 may come into contact with the outer conductor 22. When the core wire 40 comes into contact with the outer conductor 22, not only the electric insulating layer 26 made of air cannot be formed, but also current flows from the outer conductor 22 into the core wire 40 to generate noise. Therefore, the support member 24a is provided inside the center of the outer conductor 22 so that the core wire 40 does not contact the outer conductor 22, and the air layer 26 is reliably formed to prevent generation of noise. The support member 24a, like the support member 24, is made of an insulating material such as PBT (polybutylene terephthalate) in order to prevent noise from being generated by the intrusion of current from the outer conductor 22 to the core wire 40 through the support member 24a. Use material.

Here, regarding the support member 24a, it is desirable to reduce the number of the support members 24a as much as possible in order to reduce the occurrence of noise due to trapping of electric charges, and the shape of the outer conductor 22 or the core wire 40 or The number of the supporting members 24a and the locations where the supporting members 24a are arranged are appropriately set according to the length and the like. The support member 24a has a cross-shaped cross section as shown in FIG. As a result, the volume of the support member 24a becomes smaller than that of the doughnut-shaped or collar-shaped support member 24, and it is possible to suppress the occurrence of noise due to trapping of charges in the support member 24a even at high temperatures. The outer conductor 22
The support member 24a arranged at a position other than the end portion is not limited to a cross-section having a cross shape as shown in FIG. 9, and the smaller the volume, the better if the core wire 40 can be supported.

Further, FIGS. 10 and 11 show a second modification.
FIG. 10 is a schematic view of the probe needle 20,
11A is a sectional view taken along line FF of FIG. 10, and FIG.
FIG. 11 is a sectional view taken along line GG of FIG. 10. The second modified example is
In comparison with No. 6, the first electrical insulation layer 26 made of air is used.
If it is an edge layer, a second electrical insulation is formed on the inner peripheral surface of the outer conductor 22.
The only difference is the placement of the layers. Second electrically insulating layer
Specifically, 28 is SiO on the inner peripheral surface of the outer conductor 22. ₂
(Silicon oxide) and Al₂O₃Oxides such as (alumina), or
Or an electrically insulating film made of a specified plastic material, etc.
It

Since the probe needle 20 becomes smaller according to the size of the pad 2, the distance from the core wire 40 to the inner surface of the outer conductor 22 (distance W1 shown in FIG. 11B) is also extremely small. Therefore, even if the core wire 40 is the outer conductor 22
Even when trying to contact the side, the outer conductor 22 can be contacted only by contacting the second electrically insulating layer 28.
2 does not come into direct contact with the core wire 40 from the outer conductor 22.
It is possible to prevent a current from flowing through and to prevent generation of noise during measurement. Further, the second electrically insulating layer 28 also protects the inner wall of the outer conductor 22.

When the distance W3 from the second electric insulating film 28 to the core wire 40 becomes short, the second electric insulating film 2
8 and the core wire 40 may come into contact with each other. And
When electric charges are trapped in the second electric insulating film 28 at a high temperature of 100 ° C. to 150 ° C. while the second electric insulating film 28 and the core wire 40 are in contact with each other, noise is generated in the core wire 40. . Therefore, the thickness of the electric insulating film 28 is preferably an extremely thin film shape, and is about 0.1 μm to several μm in FIG. 11.

FIG. 12 is a schematic diagram of a probe card 70 according to the second embodiment of the present invention, and FIG.
It is the HH sectional view taken on the line of FIG. In these figures,
The parts denoted by the same reference numerals as those used in describing the first embodiment have the same configuration, and thus duplicated description will be omitted and different points will be mainly described.

These drawings differ from the first embodiment in that the probe needle 20 is provided on the probe card 70. That is, the probe card 70 is provided with the mold portion 74 having the opening 72 at the center. A plurality of probe needles 20 are provided in the mold portion 74 so as to obliquely penetrate along the radial direction. Each of the probe needles 20 is, for example, a semiconductor chip 76 that is an object to be measured that is heated by a heating / cooling device (not shown).
Each of the bonding pads 78 formed above is contacted to obtain an electric signal. Then, the electric signal is input to the measuring instrument 62 connected to the probe needle 20, and the measuring instrument 62 measures the electrical characteristics of the semiconductor chip 76, for example.

Here, in the structure of the probe needle 20, as shown in FIG. 13, the core wire 40 is covered with the outer conductor 22, but the core wire 40 is partially provided between the core wire 40 and the outer conductor 22. Since the support member 24 supporting the
An electrical insulating layer 26 made of air is formed between the core wire 40 and the outer conductor 22.

Then, as in the first embodiment, even when a current flows through the outer conductor 22 in the probe needle 20, the electrically insulating layer 26 made of air shuts off electricity. Further, the electric insulating layer 26 made of air does not trap electric charges even during measurement at high temperature. As described above, when the electrical characteristics of the semiconductor chip 76 are measured by using the probe card 70 including the probe needle 20 that forms the electrical insulating layer 26 made of air, noise received from the outside is prevented, and the temperature is further reduced under high temperature. It is possible to reduce electric charge trapping even during measurement, and to accurately measure the electrical characteristics.

FIG. 14 shows a modification of the second embodiment of the present invention, which is a blade type probe card 80.
FIG. In addition, FIG. 15A shows I of FIG.
FIG. 15B is a sectional end view taken along line I, and FIG.
FIG. 8 is a view in which 8 also serves as a support member 24. In these figures, the parts denoted by the same reference numerals as those used in describing the second embodiment have the same configuration, and thus duplicate description will be omitted, and different points will be mainly described.

The difference from the second embodiment is that the probe needle 82 used in this probe card 80 has a blade 98 which is a substantially L-shaped attachment piece. That is, the substrate 86 of the probe card 80 has a central opening portion 84, and the substrate 86 is provided with probe needles 82 having a plurality of blades 98 made of an electrically insulating material such as ceramic along the radial direction. The vicinity of one end 98a of the blade 98 is arranged so as to be located inside the opening 84, and the vicinity 98b of the other end of the blade 98 is arranged near the substrate 8.
6 is electrically connected on top.

A core wire 40 for contacting a bonding pad of a semiconductor chip to obtain an electric signal is provided in the blade 98, and an outer conductor 22 is provided between the core wire 40 and the blade 98. There is. A support member 24 for supporting the core wire 40 is arranged at a part between the core wire 40 and the outer conductor 22, and an electrical insulating layer made of air is provided between the outer conductor 22 and the core wire 40. 26 is formed. Note that the blade 98 may be used as a support member for supporting the core wire 40 by penetrating a part of the outer conductor 22 as shown in FIG. 15B. At this time, the blade 98 is made of an electrically insulating material such as ceramic so that electricity does not flow to the core wire 40. By doing so, the number of parts of the probe card 80 can be reduced.

Further, the end portion 82a of the probe needle 82 in the direction opposite to the measured object side of FIG. 14 is electrically connected to a connecting portion 88 for connecting to a measuring instrument (not shown). Then, when the contact end 40A of the core wire 40 of the probe needle 82 having such a structure is brought into contact with an object to be measured such as a semiconductor chip and the electrical characteristics of the object to be measured are measured, an outer conductor of the probe needle 82 Even if a current flows through 22, the electrical insulation layer 26 made of air blocks the flow of electricity to the core wire 40. Further, the electric insulating layer 26 made of air does not trap electric charges even during measurement at high temperature. Therefore, the noise of the probe needle 82 received from the outside can be prevented, and further, the trapping of charges can be reduced even at the time of measurement at high temperature, and the electrical characteristics can be accurately measured.

In the present embodiment, external noise can be effectively blocked by using the probe needle having the electric insulating layer made of air as described above and the measuring device equipped with the probe needle. Further, the generation of noise is suppressed even under any temperature environment, and the measurement of the electrical characteristics of the object to be measured is less affected and the minute leak measurement is enabled. In addition, with the realization of minute leak measurement in this way, it will spread to R & D and mass production based on design rules that approach physical property limits.

[0049]

As described above, according to the present invention,
Prevents external noise during measurement of electrical characteristics of semiconductor chips or semiconductor wafers, and also suppresses noise generated by trapped charges even at high temperature measurement, enabling accurate measurement. It is possible to provide a probe needle and a measuring device using the probe needle.

[Brief description of drawings]

FIG. 1 is a schematic block diagram of a measuring device including a probe needle according to the present embodiment.

FIG. 2 is a schematic perspective view of a measuring device in which a probe needle according to the present embodiment is brought into contact with an object to be measured.

FIG. 3 is a schematic perspective view in which the probe needle is moved by automatic control to bring the probe needle into contact with the object to be measured.

FIG. 4 is an enlarged schematic perspective view of a probe needle.

5A is a sectional view taken along line BB of FIG. 4, and FIG. 5B is a sectional view taken along line CC of FIG.

6 is a cross-sectional view taken along the line D-D of FIG. 4, showing a cross section of the probe needle in which the support member is provided only at the open end of the outer conductor.

FIG. 7 is a cross-sectional view of a probe needle in which a support member is arranged in contact with a cut surface of an outer conductor.

FIG. 8 is a perspective view of a probe needle showing a first modified example of the present embodiment.

9 is a sectional view taken along line EE of FIG. 8 and is a view for explaining the shape of a support member arranged at a position other than the end portion of the outer conductor.

FIG. 10 is a schematic view of a probe needle showing a second modification of the present embodiment.

11 is an end view of a probe needle showing a second modified example of the present embodiment, FIG. 11 (a) is an end view taken along line FF of FIG. 10, and FIG. 11 (b) is a view taken along line GG of FIG. FIG.

FIG. 12 is a schematic conceptual diagram of a probe card according to a second embodiment of the present invention.

13 is an enlarged view of the HH line cross section of FIG. 12 and the tip portion of the probe needle.

FIG. 14 is a schematic diagram of a blade type probe card, which is a modification example of the second embodiment of the present invention.

15 (a) is a sectional view taken along the line I-I of FIG. 14, and FIG. 15 (b) is a view in which the blade also serves as a supporting member.

FIG. 16 is a view devised to prevent the influence of external noise during measurement of the electrical characteristics of a semiconductor wafer.

FIG. 17 is a cross-sectional view taken along the line AA of FIG. 16, showing the structure of the probe needle 120.

[Explanation of symbols]

1, 100 ... Semiconductor wafer, 2, 110 ... Pad, 6 ... Chuck, 7 ... Heating / cooling device, 8
... Controller, 20, 82, 120 ... Probe needle, 22 ... External conductor, 24, 24a ... Support member, 26 ... Electrical insulating layer composed of air, 28 ... Electrical insulating film , 40, 122 ... Core wire, 50 ... Manipulator, 60 ... Measuring instrument, 70, 80 ... Probe card

Continued front page    F-term (reference) 2G003 AA07 AA10 AB01 AC03 AD01                       AG03 AG04 AG20 AH05 AH09                 2G011 AA02 AA17 AA22 AB01 AB06                       AB09 AB10 AC06 AC13 AC33                       AE03 AE22 AF07                 2G132 AA00 AA01 AB01 AD01 AE03                       AE22 AF01 AK02 AL11                 4M106 AA01 AA02 BA01 CA60 CA62                       DD03 DD10 DD15 DD30 DJ31

Claims (8)

[Claims] 1. A probe needle used for measuring electrical characteristics of an object to be measured by contacting the object to be measured, comprising: a core wire for contacting the object to be measured to obtain an electric signal; A probe needle, comprising: a conductive outer body that covers the core wire excluding a portion, and an electrical insulating layer made of air is formed between the outer body and the core wire. 2. The electrically insulating layer made of air is a first electrically insulating layer, and a second electrically insulating layer is provided between the outer body and the first electrically insulating layer and on the inner surface of the outer body. The probe needle according to claim 1, wherein a layer is provided. 3. An electrically insulating support member for supporting the core wire is provided between the core wire and the outer body.
The probe needle according to claim 1, wherein: 4. The at least part of the support member seals the open end of the outer body.
The probe needle described in. 5. A measuring device using a probe needle, which is used for measuring electrical characteristics of an object to be measured by contacting the object to be measured, wherein the probe needle is in contact with the object to be measured to generate an electrical signal. And a conductive outer body that covers the core wire except a part of the core wire, and an electric insulating layer made of air is formed between the outer body and the core wire. measuring device. 6. The electrically insulating layer made of air is a first electrically insulating layer, and a second electrically insulating layer is provided between the outer body and the first electrically insulating layer and on the inner surface of the outer body. The measuring device according to claim 5, wherein a layer is provided. 7. An electrically insulating support member for supporting the core wire is provided between the core wire and the external body.
The measuring device according to claim 5, wherein: 8. The method according to claim 7, wherein at least a part of the support member seals the open end of the outer body.
The measuring device according to 1.