TWI425674B - Light-emitting diode package fabricating method - Google Patents
Light-emitting diode package fabricating method Download PDFInfo
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- TWI425674B TWI425674B TW100118506A TW100118506A TWI425674B TW I425674 B TWI425674 B TW I425674B TW 100118506 A TW100118506 A TW 100118506A TW 100118506 A TW100118506 A TW 100118506A TW I425674 B TWI425674 B TW I425674B
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Description
本發明涉及一種半導體發光元件,尤其涉及一種發光二極體封裝結構之製造方法。The present invention relates to a semiconductor light emitting device, and more particularly to a method of fabricating a light emitting diode package structure.
發光二極體憑藉其高光效、低能耗、無污染等優點,已被應用於越來越多的場合之中,大有取代傳統光源的趨勢。Light-emitting diodes have been used in more and more occasions due to their high luminous efficiency, low energy consumption, and no pollution. They have a tendency to replace traditional light sources.
目前發光二極體封裝結構通常包括一個反光杯結構,所述反光杯常設於基板的上方,發光二極體放置於反光杯中。在製造發光二極體封裝結構時,點膠之前並沒有將基板上、反光杯上及基板與反光杯之間的水汽去除,從而影響該發光二極體封裝結構的壽命,甚至造成發光二極體的失效。At present, the light emitting diode package structure generally includes a reflector structure, the reflector cup is standing above the substrate, and the light emitting diode is placed in the reflector. When manufacturing the LED package structure, the water vapor on the substrate, the reflector, and the substrate and the reflector are not removed before dispensing, thereby affecting the life of the LED package structure and even causing the LED The failure of the body.
有鑒於此,有必要提供一種提高發光二極體封裝結構壽命之製造方法。In view of the above, it is necessary to provide a manufacturing method for improving the life of a light emitting diode package structure.
一種發光二極體封裝結構之製造方法,包括以下步驟:A method of manufacturing a light emitting diode package structure, comprising the steps of:
步驟1,提供複數連接的封裝基座,每一封裝基座包括基板、位於基板上的反光杯及貼附於基板上的電極對;Step 1: providing a plurality of connected package bases, each package base comprising a substrate, a reflective cup on the substrate, and an electrode pair attached to the substrate;
步驟2,固晶,將發光二極體晶片固定於電極對的其中一電極上;Step 2, solid crystal, fixing the light emitting diode chip to one of the electrodes of the electrode pair;
步驟3,焊線,通過導線將發光二極體晶片與電極對電性連接;Step 3, bonding wires, electrically connecting the light-emitting diode chip and the electrode pair through a wire;
步驟4,點膠,向反光杯內注入透明膠體;Step 4, dispensing, injecting a transparent colloid into the reflector;
步驟5,固化,烘烤封裝基座,以固化透明膠體;Step 5, curing, baking the package base to cure the transparent colloid;
步驟6,分離各個封裝基座,Step 6, separating the package bases,
其中在步驟3與步驟4之間還包括烘烤封裝基座的步驟a,在步驟a中,封裝基座的溫度控制在140±10℃範圍內,直至去除殘留在封裝基座上的水汽。The step a of baking the package base is further included between the step 3 and the step 4. In the step a, the temperature of the package base is controlled within a range of 140±10 ° C until the moisture remaining on the package base is removed.
在點膠之前對所述封裝基座進行烘烤,以去除殘留在封裝基座上的水汽,提高了發光二極體封裝結構壽命。The package base is baked before dispensing to remove moisture remaining on the package base, thereby improving the life of the LED package structure.
圖1示出了本發明一實施例的發光二極體封裝結構製造方法的流程。以下結合圖2至圖7具體說明該發光二極體封裝結構的製造方法的各個步驟。具體步驟如下:FIG. 1 shows a flow of a method of fabricating a light emitting diode package structure according to an embodiment of the invention. The respective steps of the manufacturing method of the light emitting diode package structure will be specifically described below with reference to FIGS. 2 to 7. Specific steps are as follows:
步驟一,提供複數封裝基座100,該等封裝基座10順次連接形成一整片。每一封裝基座100包括一基板10、位於基板10的上表面11的反光杯30及由該基板10的上表面11延伸至下表面12的電極對20,如圖2所示。In step one, a plurality of package pedestals 100 are provided, and the package pedestals 10 are sequentially connected to form a whole piece. Each package base 100 includes a substrate 10, a reflector cup 30 on the upper surface 11 of the substrate 10, and an electrode pair 20 extending from the upper surface 11 of the substrate 10 to the lower surface 12, as shown in FIG.
步驟二,固晶,將發光二極體晶片40固定於所述封裝基座100的電極對20中的其中一電極上,如圖3所示;Step 2, solid crystal, fixing the LED wafer 40 to one of the electrode pairs 20 of the package base 100, as shown in FIG. 3;
步驟三,焊線,將發光二極體晶片40的正負極分別與電極對20相連,如圖3所示;Step 3, bonding wires, connecting the positive and negative electrodes of the LED wafer 40 to the electrode pair 20, as shown in FIG. 3;
步驟四,烘烤封裝基座100,使封裝基座100的溫度控制在140±10℃範圍內,並持續此範圍溫度至少60分鐘,以去除殘留在封裝基座100上的化學溶液與水汽;Step 4, baking the package base 100, the temperature of the package base 100 is controlled within a range of 140±10 ° C, and the temperature of the range is continued for at least 60 minutes to remove the chemical solution and water vapor remaining on the package base 100;
步驟五,在點膠機台(圖未示)上烘烤封裝基座100,使封裝基座100的溫度控制在40℃~70℃的範圍內,並持續此溫度範圍至少10秒;Step 5, baking the package base 100 on a dispensing machine (not shown), so that the temperature of the package base 100 is controlled within a range of 40 ° C to 70 ° C, and the temperature range is continued for at least 10 seconds;
步驟六,點膠,通過點膠針60向所述反光杯30內注入透明膠體70,並對封裝基座100持續加熱,以降低透明膠體70的黏度,避免溢膠問題產生,如圖4所示;Step 6: Dispensing, injecting the transparent colloid 70 into the reflector cup 30 through the dispensing needle 60, and continuously heating the package base 100 to reduce the viscosity of the transparent colloid 70, thereby avoiding the problem of overflowing glue, as shown in FIG. Show
步驟七,在烘烤封裝機台(圖未示)上烘烤封裝基座100,使透明膠體70黏度降到最低,消減內應力並增加透明膠體70與反光杯30的氣密性,此時的溫度控制在50℃~100℃的範圍內,並持續此溫度範圍至少30分鐘。Step 7: baking the package base 100 on a baking and packaging machine (not shown) to minimize the viscosity of the transparent colloid 70, reducing the internal stress and increasing the airtightness of the transparent colloid 70 and the reflector 30. The temperature is controlled in the range of 50 ° C ~ 100 ° C and continues this temperature range for at least 30 minutes.
步驟八,烘烤封裝基座100,以固化透明膠體70,烘烤的溫度範圍為150℃~170℃;Step eight, baking the package base 100 to cure the transparent colloid 70, the baking temperature range is 150 ° C ~ 170 ° C;
步驟九,分離各個封裝基座100,以形成多個封裝結構,如圖5所示。In step nine, each package base 100 is separated to form a plurality of package structures, as shown in FIG.
在本實施例中,所述電極對20及相鄰封裝基座100之間的連接部23構成PLCC(Plastic Leaded Chip Carrier)支架。所述基板10和反光杯30與PLCC支架上的電極對20注塑成型為一體。該PLCC支架由一次成型的金屬料片製成。請再次參閱圖2,每一電極對20包括第一電極21和第二電極22。所述第一電極21和第二電極22之間相互絕緣。每一反光杯30在其中央圍設出一容置部32。在其他實施例中,所述基板10為一整塊陶瓷基板,在陶瓷基板上間隔設置有所述複數電極對20,對應每一電極對20設置一反光杯30,如圖6所示。相鄰封裝基座100之間由陶瓷基板連接。In the present embodiment, the electrode pair 20 and the connection portion 23 between the adjacent package pedestals 100 constitute a PLCC (Plastic Leaded Chip Carrier) holder. The substrate 10 and the reflector cup 30 are injection molded integrally with the electrode pair 20 on the PLCC holder. The PLCC bracket is made of a single formed sheet of metal. Referring again to FIG. 2, each electrode pair 20 includes a first electrode 21 and a second electrode 22. The first electrode 21 and the second electrode 22 are insulated from each other. Each of the reflector cups 30 has a receiving portion 32 around its center. In other embodiments, the substrate 10 is a monolithic ceramic substrate, and the plurality of electrode pairs 20 are spaced apart from each other on the ceramic substrate, and a reflector cup 30 is disposed corresponding to each electrode pair 20, as shown in FIG. Adjacent package bases 100 are connected by a ceramic substrate.
在本實施例中,步驟九採用沖壓方式將各個封裝基座100分離,具體地,用治具將相鄰封裝基座100之間的連接部23折彎,然後將封裝基座100與PLCC支架分離。當基板10為陶瓷基板時,步驟九採用切割方式將各個封裝基座100分離,具體地,用切割刀切割陶瓷基板而將各個封裝基座100分離。In this embodiment, step 9 separates the package bases 100 by stamping, specifically, the connecting portions 23 between the adjacent package bases 100 are bent by the jig, and then the package base 100 and the PLCC bracket are assembled. Separation. When the substrate 10 is a ceramic substrate, in step 9, the package bases 100 are separated by a cutting method. Specifically, the ceramic substrates are cut by a cutter to separate the package bases 100.
請再次參閱圖3,每一第一電極21的上表面上均設置所述發光二極體晶片40。該發光二極體晶片40容置於所述反光杯30的容置部32內。所述反光杯30環繞所述發光二極體晶片40,用以反射聚攏發光二極體晶片40發出的光線。所述發光二極體晶片40包括半導體發光結構(未標示)以及設置在半導體發光結構頂部的第一電連接部(未標示)和第二電連接部(未標示)。在本實施例中,所述第一電連接部、第二電連接部間隔設置在半導體發光結構遠離基板10的頂面上。所述第一電連接部通過一導線50與第一電極21形成電性連接,同樣,所述第二電連接部通過另一導線50與第二電極22形成電性連接。所述導線50具有良好的導電性能,通常由金屬材料製成。另外,所述發光二極體晶片40的兩電連接部並不限於上述實施例中分佈於發光二極體晶片40的同一側,其也可以位於發光二極體晶片40的相反兩側。此種情況僅需要一根導線50連接相應的電連接部及電極21、22,另外的電連接部及電極21、22可直接通過導電膠實現電連接而無需使用導線50。Referring again to FIG. 3, the light emitting diode chip 40 is disposed on the upper surface of each of the first electrodes 21. The LED chip 40 is received in the receiving portion 32 of the reflector cup 30. The reflector cup 30 surrounds the LED chip 40 for reflecting light emitted from the LED chip 40. The light emitting diode wafer 40 includes a semiconductor light emitting structure (not labeled) and a first electrical connection (not labeled) and a second electrical connection (not labeled) disposed on top of the semiconductor light emitting structure. In this embodiment, the first electrical connection portion and the second electrical connection portion are spaced apart from each other on a top surface of the semiconductor light emitting structure away from the substrate 10. The first electrical connection portion is electrically connected to the first electrode 21 through a wire 50. Similarly, the second electrical connection portion is electrically connected to the second electrode 22 through another wire 50. The wire 50 has good electrical conductivity and is usually made of a metallic material. In addition, the two electrical connections of the LED wafer 40 are not limited to the same side of the LED array 40 in the above embodiment, and may be located on opposite sides of the LED wafer 40. In this case, only one wire 50 is required to connect the corresponding electrical connection portion and the electrodes 21, 22. The other electrical connection portion and the electrodes 21, 22 can be electrically connected directly through the conductive adhesive without using the wire 50.
所述透明膠體70可以採用矽膠、環氧樹脂或其他透明材料。The transparent colloid 70 may be made of silicone, epoxy or other transparent material.
請同時參閱圖7,本發明在點膠的過程中可以在透明膠體70中加入螢光粉80,以接收所述發光二極體晶片40光線後可改變發出光的光特性。在步驟七中,螢光粉80均勻沉澱於反光杯30的底部,並覆蓋發光二極體晶片40。Referring to FIG. 7 at the same time, in the process of dispensing, the phosphor powder 80 can be added to the transparent colloid 70 to receive the light characteristics of the emitted light after receiving the light of the LED chip 40. In step seven, the phosphor powder 80 is uniformly deposited on the bottom of the reflector cup 30 and covers the light-emitting diode wafer 40.
本發明在點膠之前,以140±10℃的高溫來烘烤封裝基座100,以達到至少去除封裝基座100上的水汽的目的。The present invention bakes the package base 100 at a high temperature of 140 ± 10 ° C prior to dispensing to achieve at least the purpose of removing moisture on the package base 100.
本發明在點膠之前,以40℃~70℃的低溫來烘烤封裝基座100,在點膠過程中,持續加溫封裝基座100,以降低透明膠體70的黏度,避免溢膠問題產生,同時可改善發光二極體封裝結構製造的良率。The present invention bakes the package base 100 at a low temperature of 40 ° C to 70 ° C before dispensing, and continuously heats the package base 100 during the dispensing process to reduce the viscosity of the transparent colloid 70 and avoid overflow problems. At the same time, the yield of the LED package structure can be improved.
在點膠之後,以50℃~100℃的低溫來烘烤封裝基座100,使透明膠體70黏度降到最低,消減內應力並增加透明膠體70與反光杯30的氣密性。After dispensing, the package base 100 is baked at a low temperature of 50 ° C to 100 ° C to minimize the viscosity of the transparent colloid 70, reduce internal stress and increase the airtightness of the transparent colloid 70 and the reflector cup 30.
綜上所述,本發明符合發明專利要件,爰依法提出專利申請。惟,以上所述者僅為本發明之較佳實施例,舉凡熟悉本案技藝之人士,在爰依本發明精神所作之等效修飾或變化,皆應涵蓋於以下之申請專利範圍內。In summary, the present invention complies with the requirements of the invention patent and submits a patent application according to law. The above description is only the preferred embodiment of the present invention, and equivalent modifications or variations made by those skilled in the art will be included in the following claims.
100‧‧‧封裝基座100‧‧‧Package base
10‧‧‧基板10‧‧‧Substrate
11‧‧‧上表面11‧‧‧ upper surface
12‧‧‧下表面12‧‧‧ Lower surface
20‧‧‧電極對20‧‧‧electrode pair
21‧‧‧第一電極21‧‧‧First electrode
22‧‧‧第二電極22‧‧‧second electrode
23‧‧‧連接部23‧‧‧Connecting Department
30‧‧‧反光杯30‧‧‧Reflective Cup
32‧‧‧容置部32‧‧‧ 容部
40‧‧‧發光二極體晶片40‧‧‧Light Diode Wafer
50‧‧‧導線50‧‧‧ wire
60‧‧‧點膠針60‧‧‧ dispensing needle
70‧‧‧透明膠體70‧‧‧Transparent colloid
80‧‧‧螢光粉80‧‧‧Flame powder
圖1為本發明一實施例的發光二極體封裝結構之製造方法的流程圖。1 is a flow chart of a method of fabricating a light emitting diode package structure according to an embodiment of the invention.
圖2為圖1中發光二極體封裝結構之製造方法的步驟一所得的發光二極體封裝結構剖面示意圖。FIG. 2 is a cross-sectional view showing the light emitting diode package structure obtained in the first step of the manufacturing method of the light emitting diode package structure of FIG.
圖3為圖1中發光二極體封裝結構之製造方法的步驟二和步驟三所得的發光二極體封裝結構剖面示意圖。3 is a cross-sectional view showing the light emitting diode package structure obtained in the second and third steps of the manufacturing method of the light emitting diode package structure of FIG.
圖4為圖1中發光二極體封裝結構之製造方法的步驟六的點膠過程中的發光二極體封裝結構剖面示意圖。4 is a cross-sectional view showing a light emitting diode package structure in the dispensing process of the sixth step of the manufacturing method of the light emitting diode package structure of FIG.
圖5為圖1中發光二極體封裝結構之製造方法的步驟九的採用一種方式分離封裝基座的發光二極體封裝結構剖面示意圖。FIG. 5 is a cross-sectional view showing the light emitting diode package structure in which the package base is separated in a manner of step 9 in the manufacturing method of the light emitting diode package structure of FIG.
圖6為圖1中發光二極體封裝結構之製造方法的步驟九的採用另一種方式分離封裝基座的發光二極體封裝結構剖面示意圖。6 is a cross-sectional view showing the light emitting diode package structure in which the package base is separated in another manner in the step 9 of the manufacturing method of the light emitting diode package structure of FIG.
圖7為圖1中發光二極體封裝結構之製造方法的步驟七中透明膠體中包含有螢光粉所得的發光二極體封裝結構剖面示意圖。FIG. 7 is a cross-sectional view showing a light emitting diode package structure obtained by containing phosphor powder in a transparent colloid in the seventh step of the method for manufacturing the light emitting diode package structure of FIG. 1 .
Claims (10)
步驟1,提供複數連接的封裝基座,每一封裝基座包括基板、位於基板上的反光杯及貼附於基板上的電極對;
步驟2,固晶,將發光二極體晶片固定於電極對的其中一電極上;
步驟3,焊線,通過導線將發光二極體晶片與電極對電性連接;
步驟4,點膠,向反光杯內注入透明膠體;
步驟5,固化,烘烤封裝基座,以固化透明膠體;
步驟6,分離各個封裝基座,
其改良在於:在步驟3與步驟4之間還包括烘烤封裝基座的步驟a,在步驟a中,封裝基座的溫度控制在140±10℃範圍內,直至去除殘留在封裝基座上的水汽。A method of manufacturing a light emitting diode package structure, comprising the steps of:
Step 1: providing a plurality of connected package bases, each package base comprising a substrate, a reflective cup on the substrate, and an electrode pair attached to the substrate;
Step 2, solid crystal, fixing the light emitting diode chip to one of the electrodes of the electrode pair;
Step 3, bonding wires, electrically connecting the light-emitting diode chip and the electrode pair through a wire;
Step 4, dispensing, injecting a transparent colloid into the reflector;
Step 5, curing, baking the package base to cure the transparent colloid;
Step 6, separating the package bases,
The improvement is that the step a of baking the package base is further included between the step 3 and the step 4. In the step a, the temperature of the package base is controlled within a range of 140±10 ° C until the removal remains on the package base. Water vapor.
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TW457731B (en) * | 1999-12-29 | 2001-10-01 | Taiwan Oasis Entpr Co Ltd | Structure and manufacturing method of a light emitting diode |
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TW201248930A (en) | 2012-12-01 |
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