TWI421148B - 具研磨受熱平面之散熱器及其研磨方法與設備 - Google Patents

具研磨受熱平面之散熱器及其研磨方法與設備 Download PDF

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TWI421148B
TWI421148B TW098118180A TW98118180A TWI421148B TW I421148 B TWI421148 B TW I421148B TW 098118180 A TW098118180 A TW 098118180A TW 98118180 A TW98118180 A TW 98118180A TW I421148 B TWI421148 B TW I421148B
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grinding
heat sink
heat
abrasive
jig
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TW201043400A (en
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Chen Hsiang Lin
Jui Ho Liu
Chih Hunb Cheng
Ken Hsu
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Cpumate Inc
Golden Sun News Tech Co Ltd
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Priority to TW098118180A priority Critical patent/TWI421148B/zh
Priority to US12/482,000 priority patent/US8235768B2/en
Priority to KR1020090055353A priority patent/KR20100137104A/ko
Priority to JP2009161169A priority patent/JP5377123B2/ja
Publication of TW201043400A publication Critical patent/TW201043400A/zh
Priority to US13/409,593 priority patent/US20120160458A1/en
Priority to US13/409,575 priority patent/US8328601B2/en
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    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28HEAT EXCHANGE IN GENERAL
    • F28DHEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D15/00Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
    • F28D15/02Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
    • F28D15/0275Arrangements for coupling heat-pipes together or with other structures, e.g. with base blocks; Heat pipe cores
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/12Lapping plates for working plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/27Work carriers
    • B24B37/30Work carriers for single side lapping of plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28HEAT EXCHANGE IN GENERAL
    • F28DHEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D15/00Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
    • F28D15/02Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
    • F28D15/0233Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes the conduits having a particular shape, e.g. non-circular cross-section, annular
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28HEAT EXCHANGE IN GENERAL
    • F28FDETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F13/00Arrangements for modifying heat-transfer, e.g. increasing, decreasing
    • F28F13/18Arrangements for modifying heat-transfer, e.g. increasing, decreasing by applying coatings, e.g. radiation-absorbing, radiation-reflecting; by surface treatment, e.g. polishing
    • F28F13/182Arrangements for modifying heat-transfer, e.g. increasing, decreasing by applying coatings, e.g. radiation-absorbing, radiation-reflecting; by surface treatment, e.g. polishing especially adapted for evaporator or condenser surfaces
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/427Cooling by change of state, e.g. use of heat pipes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/467Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing gases, e.g. air
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Description

具研磨受熱平面之散熱器及其研磨方法與設備
本發明係與散熱器有關,特別有關於一種受熱平面經研磨的散熱器及方法。
隨著科技的進步,電腦硬體日趨往高速、高頻的方向發展以提升執行效率,其所消耗之功率亦相對較高,相較習知,現今電子元件所產生的熱量更為可觀,若不及時排除累積之熱量,易使電子元件過熱而降低處理效率,甚至造成損壞,因而電子元件大多均需散熱裝置,以控制工作溫度而維持電子元件之正常運作。
習知包含有均溫板或熱管等的散熱裝置,實施時係先將其結合於一導熱座,並於其上設置複數散熱片,再令導熱座之一側面與發熱電子元件相互接觸,藉以熱導離發熱電子元件所產生的熱;惟,由於散熱空間或耗電量等諸多因素的受限,如何盡可能地提升散熱效率,即為業界所欲解決的課題。
然,當該散熱器之受熱面愈平整時,該受熱面與發熱電子元件的導熱接觸會愈緊密,而可提升導熱效果;此外,一般散熱器的受熱面通常為霧面,該受熱面經過加工後而看似平整光滑,然而實際上,該受熱面之表面粗糙度及平面度仍不佳,造成該受熱面與發熱元件無法緊密地貼接,為此侷限該受熱平面與發熱電子元件的導熱,因此,若能降低該受熱面的表面粗糙度之值及提昇其平面度,以增加該受熱面與發熱電子元件接觸的密合度,則可產生更佳的導熱效果。
有鑑於此,本發明人為改善並解決上述之缺失,乃特潛心研究並配合學理之運用,終於提出一種設計合理且有效改善上述缺失之本發明。
本發明之一主要目的,在於提供一種具研磨受熱平面之散熱器及其研磨方法與設備,藉由研磨散熱器的受熱平面,以降低受熱平面的表面粗糙度之值並提昇其平面度,進而增加與發熱電子元件接觸的導熱效果。
為了達成上述之目的,本發明係為一種散熱器之受熱平面的研磨方法,其步驟係包括:(a)提供具一研磨盤之一研磨機及一治具;(b)提供具一受熱平面之一散熱器,並將散熱器置設於治具上;(c)於研磨盤及受熱平面之間注入一研磨物;(d)令治具壓掣散熱器,以使受熱平面平貼於研磨物上;以及(e)旋轉研磨盤,以對受熱平面進行至少一次研磨。
為了達成上述之目的,本發明係提供一種研磨散熱器受熱平面之設備,以供研磨一散熱器的一受熱平面,該設備係包括一研磨機及一治具,研磨機具研磨盤及研磨物供應筒,研磨物供應筒設於研磨盤上方以提供研磨物於受熱平面及研磨盤之間,治具連結於該研磨機上並具有至少一壓板,壓板供置設散熱器,藉此,使壓板壓掣於散熱器,以令散熱器之受熱平面平貼於研磨物。
為了達成上述之目的,本發明係為一種具研磨受熱平面之散熱器,以供一發熱電子元件之散熱,主要包括一散熱器,該散熱器具一受熱平面,該受熱平面係經一治具壓掣於一研磨機上而進行研磨,使該受熱平面之表面粗糙度之值在Ra0.03μm以下,且其平面度係在10μm以下。
相較於習知技術,本發明係於研磨機設有一治具,該治具係以點接觸之方式壓掣散熱器,藉此研磨該散熱器之受熱平面以獲得較佳的平面度及表面粗糙度之值,增加受熱平面與發熱電子元件接觸的密合度,進而產生更佳的導熱效果,增加本發明之實用性。
有關本發明之詳細說明及技術內容,配合圖式說明如下,然而所附圖式僅提供參考與說明用,並非用來對本發明加以限制者。
請參照第一圖,係為本發明之研磨機及治具的組合圖;本發明提供一種散熱器之受熱平面研磨的方法,係提供一研磨機10,該研磨機10具有一研磨盤11及一固定架15,該研磨盤11係經由一馬達12而帶動旋轉,該固定架15係固定於該研磨機10上,該固定架15上置設有一研磨物供應筒13,該研磨物供應筒13內填裝有研磨物,且該研磨物供應筒13具有一噴管131,以將該研磨物噴至該研磨盤11上。
該研磨機10於該研磨盤11之上方另連結有一治具20,該治具20與該研磨機10之間係設有至少一彈性元件14(如彈簧等),該彈性元件14使該治具20與該研磨盤11維持一間隙100並可彈性地上、下位移;此外,該固定架15上另設有一驅動裝置21,如油壓缸或氣壓缸等,該驅動裝置21係抵接於該治具20上,藉由驅動該驅動裝置21的升降,以令該治具20朝該研磨盤11的方向接近或遠離。
請另參第二圖及第三圖,係本發明之治具壓掣散熱器的示意圖及其剖視圖;該治具20可對應該研磨盤11而呈圓盤形,其周緣係等分地凸伸出複數個壓板22,該壓板22係供置放一散熱器30,此外,該壓板22之底部設有一尖突221,該尖突221係壓抵於該散熱器30之中心,以令該治具20呈點接觸的方式壓掣該散熱器30。
於本實施例中,該散熱器30係包括一導熱座31、至少一熱管32及複數散熱鰭片33,該熱管32具一平面化蒸發段321及一冷凝段322,該導熱座31係設有至少一溝槽310,該平面化蒸發段321嵌設於該溝槽310中,且該等複數散熱鰭片33係穿設於該熱管32之冷凝段322上,其中,該平面化蒸發段321係形成一受熱平面34,以供接觸發熱源,當該導熱座31之頂部受該壓板22之尖突221壓掣時,該散熱器30之受熱平面34即被壓抵而與該研磨盤11相對應設置。
請參照第四圖至及第七圖,係為本發明之散熱器的研磨使用示意圖、研磨側視圖、研磨動作示意及研磨時的局部放大示意圖;先於該治具20之各壓板22上分別置設有該散熱器30,再將研磨物132注入該研磨盤11及該受熱平面34的間隙100中,該研磨物132係包含有研磨液1321及研磨顆粒1322(參第七圖),接著啟動該驅動裝置21,使該治具20下降而壓板22分別對應壓掣於各導熱座31之頂部,且令該尖突221壓掣於該導熱座31之中心,使各受熱平面34接觸該研磨物132而平貼於該研磨盤11上,然後再啟動該馬達12,該馬達12即帶動該研磨盤11,令該研磨盤11進行圓周式的轉動,藉由離心力及壓掣作用,該研磨物132即可均勻地對該受熱平面34進行研磨,以提升該受熱平面34的平面度,並取得表面粗糙度最佳之值,待研磨完成時,再驅動該驅動裝置21並令其上升,此時,該治具20即脫離壓掣並藉由該彈性元件14的彈性回復力而上升,使該散熱器30之受熱平面34離開與該研磨盤11之相對接觸。
之後,可將該等散熱器30移至另一研磨機台以進行下一道研磨程序,或者,亦可分次進行研磨並分次注入具有不同研磨精度的該研磨物132,先注入研磨精度較粗的該研磨物132以進行第一次研磨,待完成該第一次研磨後,再注入研磨精度較細的該研磨物132以進行第二次研磨,經由更換研磨時所注入的該研磨物132,以達研磨該受熱平面34至所需精度,使其表面粗糙度之值達到Ra0.03μm以下,大約介於Ra0.03μm至Ra0.01μm之間,而其平面度大約介於0.3μm至10μm之間。
請參照第八圖,係為本發明散熱器之受熱平面的研磨方法的步驟流程圖;其步驟如下,首先,提供具一研磨盤11之一研磨機10及一治具20(步驟61),接著,提供具一受熱平面34之一散熱器30,(步驟62),再將研磨物132注入該研磨盤11及該受熱平面34之間(步驟63),且可分次進行研磨,並分別注入具有不同研磨精度的研磨物132,再令該治具20以點壓掣的方式壓掣該散熱器30,如壓掣於相對於該受熱平面34的另一面,以使該受熱平面34平貼於該研磨盤11上以接觸該研磨物132(步驟64),最後,旋轉該研磨盤11,以對該受熱平面34進行至少一次的研磨(步驟65)。
請參第九圖,係為本發明具研磨受熱平面之散熱器的一實施例;該導熱座31具有一底平面311,該底平面311設有至少一溝槽310,而該熱管32之平面化蒸發段321係嵌設於該溝槽310中,當該等平面化蒸發段321之表面高於該導熱座31之底平面311時,該等平面化蒸發段321即為其受熱平面34,再者,當該等平面化蒸發段321之表面與該導熱座31之底平面311齊平時,該受熱平面34則包括該等平面化蒸發段321及該底平面311,該受熱平面34經研磨後可獲得如鏡面般的細緻平面,用此以貼接一發熱電子元件而供其散熱。
請另參第十圖,係為本發明具研磨受熱平面之散熱器的另一實施例;本實施例與第一實施例大致相同,其不同之處係在於其導熱座31’之底平面311’係僅設有一容納凹槽310’,該散熱器30’具設有三支熱管32’,該熱管32’具有一平面化蒸發段321’並穿設有散熱鰭片33’,其中,三支熱管32,係並列地壓掣於該容納凹槽310’且齊平的形成該等平面化蒸發段321’,同理地,當該等平面化蒸發段321’之表面高於該導熱座31’之底平面311’時,該等平面化蒸發段321’即為其受熱平面34’,再者,當該等平面化蒸發段321’之表面與該導熱座31’之底平面311’齊平時,該受熱平面34’則包括該等平面化蒸發段321’及該底平面311’。
請再參第十一圖,係為本發明具研磨受熱平面之散熱器的再一實施例;其散熱器40係為一平板式熱管41,該平板式熱管41具有一平面化蒸發段411並穿設有複數散熱鰭片43,該平面化蒸發段411即為其受熱平面42,該受熱平面42係經研磨而使其表面達到更佳的表面粗糙度及平面度,以更為緊密地貼接發熱元件,進而增加導熱效果。
以上所述僅為本發明之較佳實施例,非用以限定本發明之專利範圍,其他運用本發明之專利精神之等效變化,均應俱屬本發明之專利範圍。
10...研磨機
100...間隙
11...研磨盤
12...馬達
13...研磨物供應筒
131...噴管
132...研磨物
1321...研磨液
1322...研磨顆粒
14...彈性元件
15...固定架
20...治具
21...驅動裝置
22...壓板
221...尖突
30...散熱器
31...導熱座
310...溝槽
311...底平面
32...熱管
321...平面化蒸發段
322...冷凝段
33...散熱鰭片
34...受熱平面
30’...散熱器
310’...容納凹槽
31’...導熱座
311’...底平面
32’...熱管
321’...平面化蒸發段
33’...散熱鰭片
34’...受熱平面
40...散熱器
41...平板式熱管
411...平面化蒸發段
42...受熱平面
43...散熱鰭片
61~65...步驟
第一圖 係為本發明之研磨機及治具的組合圖;
第二圖 係本發明之治具壓掣散熱器的示意圖;
第三圖 係本發明之治具壓掣散熱器的剖視圖;
第四圖 係本發明之散熱器的研磨使用示意圖;
第五圖 係本發明研磨時的側視圖;
第六圖 係本發明之研磨動作示意圖;
第七圖 係本發明研磨時的局部放大示意圖;
第八圖 係本發明散熱器之受熱平面的研磨方法的步驟流程圖;
第九圖 係為本發明具研磨受熱平面之散熱器的一實施例;
第十圖 係為本發明具研磨受熱平面之散熱器的另一實施例;以及
第十一圖 係為本發明具研磨受熱平面之散熱器的再一實施例。
10...研磨機
11...研磨盤
12...馬達
13...研磨物供應筒
131...噴管
132...研磨物
14...彈性元件
15...固定架
20...治具
21...驅動裝置
22...壓板
30...散熱器

Claims (12)

  1. 一種散熱器受熱平面之研磨方法,係包括:提供具一研磨盤之一研磨機及一治具;提供具一受熱平面之一散熱器,並將該散熱器置設於該治具上;於該研磨盤及該受熱平面之間注入一研磨物;令該治具以點壓掣之方式壓掣該散熱器,以使該受熱平面平貼於該研磨物上;以及旋轉該研磨盤,以令該研磨物對該受熱平面進行至少一次研磨。
  2. 如請求項第1項所述之散熱器受熱平面之研磨方法,其中該(c)步驟中,該研磨物係包含研磨液及研磨顆粒。
  3. 如請求項第1項所述之散熱器受熱平面之研磨方法,其中該(c)步驟中,係可分次進行研磨,並分別注入具有不同研磨精度的研磨物。
  4. 如請求項第3項所述之散熱器受熱平面之研磨方法,其中係先注入研磨精度較粗的該研磨物以進行第一次研磨,待完成該第一次研磨後再注入研磨精度較細的該研磨物以進行第二次研磨。
  5. 如請求項第1項所述之散熱器受熱平面之研磨方法,其中該(d)步驟中,該治具係壓掣於相對於該受熱平面的另一面。
  6. 一種研磨散熱器受熱平面之設備,以供研磨一散 熱器的一受熱平面,該設備係包括:一研磨機,係具一研磨盤及一研磨物供應筒,該研磨物供應筒設於該研磨盤上方,係提供一研磨物於所述受熱平面及該研磨盤之間;以及一治具,係連結於該研磨機上,該治具係具有至少一壓板,該壓板係供置設所述散熱器,該壓板之底部設有至少一尖突,該尖突係壓掣於該散熱器上;藉此,使該壓板壓掣於所述散熱器,以令所述散熱平面平貼於該研磨物。
  7. 如請求項第6項所述之研磨散熱器受熱平面之設備,其中該研磨機係設有一固定架及至少一彈性元件,該固定架係固定於該研磨機上,該彈性元件係設於該治具與該研磨機之間,以供該治具彈性地裝設該研磨機上。
  8. 如請求項第7項所述之研磨散熱器受熱平面之設備,其中該研磨機更包括一驅動裝置,該驅動裝置係置設於該固定架上,該驅動裝置係抵接該治具,以驅動該治具彈性地升降而壓掣該散熱器。
  9. 如請求項第6項所述之研磨散熱器受熱平面之設備,其中該治具係對應該研磨盤而呈圓盤形,其周緣係等分地凸伸出複數個壓板。
  10. 如請求項第6項所述之研磨散熱器受熱平面之設備,其中該壓板係以呈點接觸的方式壓掣該散熱器。
  11. 如請求項第6項所述之研磨散熱器受熱平面之設備,其中該研磨物供應筒係具有一噴管。
  12. 如請求項第6項所述之研磨散熱器受熱平面之設備,其中該研磨物係包含研磨液及研磨顆粒。
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US12/482,000 US8235768B2 (en) 2009-06-02 2009-06-10 Cooler with ground heated plane and grinding method and apparatus thereof
KR1020090055353A KR20100137104A (ko) 2009-06-02 2009-06-22 열전달평면을 연마할 수 있는 열분산장치 및 그 연마방법 그리고 그 설비
JP2009161169A JP5377123B2 (ja) 2009-06-02 2009-07-07 散熱器の受熱平面を研磨する設備
US13/409,593 US20120160458A1 (en) 2009-06-02 2012-03-01 Cooler having ground heated plane for cooling heating electronic component
US13/409,575 US8328601B2 (en) 2009-06-02 2012-03-01 Apparatus for grinding heated plane of cooler

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Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9418904B2 (en) 2011-11-14 2016-08-16 Taiwan Semiconductor Manufacturing Co., Ltd. Localized CMP to improve wafer planarization
US10065288B2 (en) 2012-02-14 2018-09-04 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical mechanical polishing (CMP) platform for local profile control
US20130210173A1 (en) * 2012-02-14 2013-08-15 Taiwan Semiconductor Manufacturing Co., Ltd. Multiple Zone Temperature Control for CMP
CN105252411B (zh) * 2015-10-26 2018-01-02 长安大学 一种夹持头能够自动转向的夹具
CN107378631A (zh) * 2017-08-30 2017-11-24 张家港华翊电工有限公司 一种金属制品加工用钻孔装置
CN107960048B (zh) * 2017-12-26 2019-10-29 李磊 一种具有冷却作用的通讯设备安装架
JP6953365B2 (ja) 2018-06-07 2021-10-27 横河電機株式会社 温度差発電装置及び測定システム
TWI827971B (zh) * 2021-09-01 2024-01-01 建佳科技股份有限公司 用於半導體製程的烘烤夾具及其應用設備
CN114952491B (zh) * 2022-07-14 2023-01-24 苏州立而达精准弹簧有限公司 一种精密弹簧端部毛刺打磨机构
JP7235922B1 (ja) 2022-07-26 2023-03-08 古河電気工業株式会社 ヒートシンク
CN115741390B (zh) * 2022-11-23 2023-05-09 安徽微芯长江半导体材料有限公司 一种碳化硅晶体整形一体机

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001148449A (ja) * 1999-11-18 2001-05-29 Aronshiya:Kk 半導体用ヒートスプレッダーの製造方法
TW471992B (en) * 1999-12-30 2002-01-11 Lam Res Corp Method and apparatus for conditioning a polishing pad
US20040201963A1 (en) * 2003-04-14 2004-10-14 Scott Garner Heat dissipation unit with direct contact heat pipe
US20050092464A1 (en) * 2003-11-04 2005-05-05 Charles Leu Heat sink with carbon nanotubes and method for manufacturing same
TWM294688U (en) * 2005-12-16 2006-07-21 Hoff Thermal Technology Co Ltd Improved heatsink device structure
TWI275445B (en) * 2001-11-30 2007-03-11 Toshiroh Doy Abrasive machine and method of abrading work piece
TW200726384A (en) * 2005-12-16 2007-07-01 Axis Prec Inc Radiator and manufacture method thereof (I)
TWM342013U (en) * 2008-04-25 2008-10-01 Huang-Cheng Chu Fixing structure of heat conductive pipe

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2883802A (en) * 1956-09-24 1959-04-28 Crane Packing Co Method of and apparatus for lapping shoulders
FR2523892A1 (fr) * 1982-03-26 1983-09-30 Procedes Equip Sciences Ind Perfectionnements aux machines de polissage a plateau tournant
JPS61288973A (ja) * 1985-06-18 1986-12-19 Taihoo Kogyo Kk 研磨方法
JPH06104817B2 (ja) 1990-10-09 1994-12-21 日本研磨材工業株式会社 アルミナ―ジルコニア系ラップ研磨材とその製造方法及び研磨用組成物
US5468177A (en) * 1993-02-26 1995-11-21 Quantum Corporation Lapping fixture for disk sliders
US5591073A (en) * 1995-12-13 1997-01-07 Quantum Corporation Method and apparatus for lapping sliders
JP3982890B2 (ja) * 1997-08-06 2007-09-26 富士通株式会社 研磨装置、この装置に用いられる研磨治具、及び、この研磨治具に取り付けられる被研磨物取付部材
US6010392A (en) * 1998-02-17 2000-01-04 International Business Machines Corporation Die thinning apparatus
JP2000094309A (ja) * 1998-09-18 2000-04-04 Toshiba Corp ポリッシング装置
JP4293389B2 (ja) * 1999-01-11 2009-07-08 Hoya株式会社 磁気ディスクの製造方法
EP1210206A4 (en) * 1999-07-23 2006-11-15 Steven E Phillips TILT LEVER FASTENING DEVICE OF LOW THICKNESS
US6663477B1 (en) * 2000-05-11 2003-12-16 International Business Machines Corporation Complaint membrane for restraining a workpiece and applying uniform pressure during lapping to improve flatness control
US20020039874A1 (en) * 2000-08-17 2002-04-04 Hecker Philip E. Temperature endpointing of chemical mechanical polishing
US20020187731A1 (en) * 2001-06-07 2002-12-12 Taiwan Semiconductor Manufacturing Co., Ltd. In-situ pad and wafer cleaning during chemical mechanical polishing
US7014532B2 (en) * 2001-09-10 2006-03-21 Fujitsu Limited Lapping machine, lapping method, and method of manufacturing magnetic head
JP2003188320A (ja) 2001-12-17 2003-07-04 Matsushita Electric Ind Co Ltd 電子部品用ヒートシンクおよびその製造方法
US6733368B1 (en) * 2003-02-10 2004-05-11 Seh America, Inc. Method for lapping a wafer
US20050016714A1 (en) * 2003-07-09 2005-01-27 Chung Deborah D.L. Thermal paste for improving thermal contacts
CN100338767C (zh) * 2004-05-26 2007-09-19 鸿富锦精密工业(深圳)有限公司 热管散热装置及其制造方法
US7115020B1 (en) * 2005-04-07 2006-10-03 International Business Machines Corporation Lapping system with mutually stabilized lapping carriers
TWM282235U (en) * 2005-06-24 2005-12-01 Golden Sun News Tech Co Ltd Improved structure of a heat dissipating device using heat pipes
TWM312705U (en) * 2006-11-09 2007-05-21 Golden Sun News Tech Co Ltd Assembly structure of fixing seat and heat pipe
JP2008166465A (ja) * 2006-12-28 2008-07-17 Nippon Densan Corp ヒートシンクファン
TW200821811A (en) * 2008-01-11 2008-05-16 Chung-Shian Huang Heat dissipation device without a base

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001148449A (ja) * 1999-11-18 2001-05-29 Aronshiya:Kk 半導体用ヒートスプレッダーの製造方法
TW471992B (en) * 1999-12-30 2002-01-11 Lam Res Corp Method and apparatus for conditioning a polishing pad
TWI275445B (en) * 2001-11-30 2007-03-11 Toshiroh Doy Abrasive machine and method of abrading work piece
US20040201963A1 (en) * 2003-04-14 2004-10-14 Scott Garner Heat dissipation unit with direct contact heat pipe
US20050092464A1 (en) * 2003-11-04 2005-05-05 Charles Leu Heat sink with carbon nanotubes and method for manufacturing same
TWM294688U (en) * 2005-12-16 2006-07-21 Hoff Thermal Technology Co Ltd Improved heatsink device structure
TW200726384A (en) * 2005-12-16 2007-07-01 Axis Prec Inc Radiator and manufacture method thereof (I)
TWM342013U (en) * 2008-04-25 2008-10-01 Huang-Cheng Chu Fixing structure of heat conductive pipe

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US20120276822A1 (en) 2012-11-01
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