TWI418529B - Oxide sintered body and oxide semiconductor thin film - Google Patents

Oxide sintered body and oxide semiconductor thin film Download PDF

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TWI418529B
TWI418529B TW100127841A TW100127841A TWI418529B TW I418529 B TWI418529 B TW I418529B TW 100127841 A TW100127841 A TW 100127841A TW 100127841 A TW100127841 A TW 100127841A TW I418529 B TWI418529 B TW I418529B
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Taiwan
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sintered body
oxide
metal ion
thin film
oxide semiconductor
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TW100127841A
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TW201213273A (en
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Hideo Takami
Kozo Osada
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Jx Nippon Mining & Metals Corp
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Description

氧化物燒結體及氧化物半導體薄膜
本發明係關於一種有用於製作顯示裝置中之薄膜電晶體的氧化物燒結體及氧化物半導體薄膜。
氧化物半導體除用作液晶顯示裝置、電漿顯示裝置及有機EL顯示裝置等顯示裝置中之薄膜電晶體的活性層以外，亦用作太陽電池及觸控面板等之電極。先前，已知透明之In-Ga-Zn-O系(以下記載為「IGZO系」)作為氧化物半導體(參照非專利文獻1)，進而，亦有關於為改善特性而添加有錫(Sn)之系的報告(參照專利文獻1及2)。然而，就作為該等系之必要構成要素之鎵(Ga)為稀有元素且價格亦較高等理由而言，於產業上大量使用時存在較大限制。
作為未使用Ga之透明氧化物半導體，有In-Zn-O系(參照專利文獻3)、In-Zn-Sn-O系(參照專利文獻4)、及Zn-Sn-O系(參照專利文獻5)之報告。
[專利文獻1]日本特開2008-280216號公報
[專利文獻2]日本特開2010-118407號公報
[專利文獻3]日本特開2007-142195號公報
[專利文獻4]日本特開2008-243928號公報
[專利文獻5]日本特開2007-142196號公報
[非專利文獻1]自然(Nature)432，p488-492，10月2004
於上述專利文獻3～5所記載之氧化物半導體中，未使用作為IGZO系之必須構成要素之Ga，於製造成本方面有利，但會有電阻率隨時間變化等環境穩定性不良等問題。又，作為IGZO系之其他必須構成要素之鋅(Zn)為易揮發元素，因製造燒結體時之揮發所引起之燒結體密度下降、因濺鍍成膜時之揮發所引起之與靶組成之偏差、膜之電阻率隨時間變化等，成為抑制膜之穩定性之主要原因。
因此，本發明之課題在於提供一種不含有稀有資源且高價格之鎵(Ga)、及易揮發且於膜之穩定性方面有問題之鋅(Zn)的氧化物半導體膜製造用之氧化物燒結體。又，本發明之其他課題在於提供一種具有與該氧化物燒結體相同之組成之氧化物半導體薄膜。
本發明人為解決上述問題經潛心研究後，結果發現使用特定之2價金屬代替易揮發之鋅(Zn)，使用特定之3價或4價金屬代替稀有且高價格之元素鎵(Ga)，進而調整該等之原子數比、燒結體或膜之製造條件等，藉此獲得不含有鎵(Ga)及鋅(Zn)之氧化物半導體膜製造用之氧化物燒結體及氧化物半導體薄膜。
以上述見解為基礎而完成之本發明於一態樣中為一種氧化物燒結體，其係由3價銦離子(In3+ )、2價金屬離子(X2+ )(其中，X表示選自Mg、Ca、Co及Mn中之1種以上之元素)、3價金屬離子(Y3+ )(其中，Y表示選自B、Y、Cr中之1種以上之元素)或4價金屬離子(Z4+ )(其中，Z表示選自Si、Ge、Ti、Zr中之1種以上之元素)、及氧離子(O2- )所構成，3價銦離子(In3+ )、2價金屬離子(X2+ )、3價金屬離子(Y3+ )、及4價金屬離子(Z4+ )之原子數比分別滿足0.2≦[In3+ ]/{[In3+ ]+[X2+ ]+[Y3+ ]+[Z4+ ]}≦0.8、0.1≦[X2+ ]/{[In3+ ]+[X2+ ]+[Y3+ ]+[Z4+ ]}≦0.5、及0.1≦{[Y3+ ]+[Z4+ ]}/{[In3+ ]+[X2+ ]+[Y3+ ]+[Z4+ ]}≦0.5。
本發明之氧化物燒結體於一實施形態中，相對密度為98%以上。
本發明之氧化物燒結體於另一實施形態中，體電阻為3mΩ以下。
本發明於另一態樣中為一種氧化物半導體薄膜，其係由3價銦離子(In3+ )、2價金屬離子(X2+ )(其中，X表示選自Mg、Ca、Co及Mn中之1種以上之元素)、3價金屬離子(Y3+ )(其中，Y表示選自B、Y、Cr中之1種以上之元素)或4價金屬離子(Z4+ )(其中，Z表示選自Si、Ge、Ti、Zr中之1種以上之元素)、及氧離子(O2- )所構成，3價銦離子(In3+ )、2價金屬離子(X2+ )、3價金屬離子(Y3+ )、及4價金屬離子(Z4+ )之原子數比分別滿足：0.2≦[In3+ ]/{[In3+ ]+[X2+ ]+[Y3+ ]+[Z4+ ]}≦0.8、0.1≦[X2+ ]/{[In3+ ]+[X2+ ]+[Y3+ ]+[Z4+ ]}≦0.5、及0.1≦{[Y3+ ]+[Z4+ ]}/{[In3+ ]+[X2+ ]+[Y3+ ]+[Z4+ ]}≦0.5。
本發明之氧化物半導體薄膜於一實施形態中，為非晶質。
本發明之氧化物半導體薄膜於另一實施形態中，載子濃度為1016 ～1018 cm-3 。
本發明之氧化物半導體薄膜於再另一實施形態中，遷移率為1cm2 /Vs以上。
本發明於再另一態樣中，係一種具備有上述氧化物半導體薄膜作為活性層之薄膜電晶體。
本發明於再另一態樣中，係一種具備有上述薄膜電晶體之主動矩陣驅動顯示面板。
根據本發明，可提供一種不含有稀有資源且高價格之鎵(Ga)、及易揮發且於膜之穩定性方面有問題之鋅(Zn)的氧化物半導體膜製造用之氧化物燒結體。又，根據本發明，可提供一種具有與該氧化物燒結體相同之組成之氧化物半導體薄膜。
(氧化物燒結體之組成)
本發明之氧化物燒結體係由3價銦離子(In3+ )、2價金屬離子(X2+ )(其中，X表示選自Mg、Ca、Co及Mn中之1種以上之元素)、3價金屬離子(Y3+ )(其中，Y表示選自B、Y、Cr中之1種以上之元素)或4價金屬離子(Z4+ )(其中，Z表示選自Si、Ge、Ti、Zr中之1種以上之元素)、及氧離子(O2- )所構成。惟，本發明之燒結體中包含：無法避免含有之濃度程度例如達到各元素10ppm左右含有通常可獲得之原料之純化步驟中無法避免含有的元素、或於氧化物燒結體製造過程中無法避免混入的雜質元素。
3價銦離子(In3+ )之原子數相對於3價銦離子(In3+ )、2價金屬離子(X2+ )、3價金屬離子(Y3+ )、及4價金屬離子(Z4+ )之合計原子數的比[In3+ ]/{[In3+ ]+[X2+ ]+[Y3+ ]+[Z4+ ]}為0.2～0.8。若[In3+ ]/{[In3+ ]+[X2+ ]+[Y3+ ]+[Z4+ ]}未達0.2，則製作靶時之相對密度會變小、體電阻會變高、濺鍍時易發生異常放電。若[In3+ ]/{[In3+ ]+[X2+ ]+[Y3+ ]+[Z4+ ]}超過0.8，則對該組成之靶進行濺鍍所獲得之膜的載子濃度會變得過高，電晶體之通道層的開關比會變小。[In3+ ]/{[In3+ ]+[X2+ ]+[Y3+ ]+[Z4+ ]}更理想為0.25～0.6之範圍，進而理想為0.3～0.5之範圍。此處，[In3+ ]表示銦之原子數，[X2+ ]表示2價金屬離子(X2+ )之原子數，[Y3+ ]表示3價金屬離子(Y3+ )之原子數，[Z4+ ]表示4價金屬離子(Z4+ )之原子數。
2價金屬離子(X2+ )之原子數相對於3價銦離子(In3+ )、2價金屬離子(X2+ )、3價金屬離子(Y3+ )、及4價金屬離子(Z4+ )之合計原子數的比[X2+ ]/{[In3+ ]+[X2+ ]+[Y3+ ]+[Z4+ ]}為0.1～0.5。若[X2+ ]/{[In3+ ]+[X2+ ]+[Y3+ ]+[Z4+ ]}未達0.1，則對該組成之靶進行濺鍍所獲得之膜的載子濃度會變得過高，電晶體之通道層的開關比會變小。若[X2+ ]/{[In3+ ]+[X2+ ]+[Y3+ ]+[Z4+ ]}超過0.5，則製作靶時之相對密度會變小、體電阻會變高、濺鍍時易發生異常放電。[X2+ ]/{[In3+ ]+[X2+ ]+[Y3+ ]+[Z4+ ]}更理想為0.15～0.4之範圍，進而理想為0.2～0.35之範圍。
3價金屬離子(Y3+ )及4價金屬離子(Z4+ )之合計原子數相對於3價銦離子(In3+ )、2價金屬離子(X2+ )、3價金屬離子(Y3+ )、及4價金屬離子(Z4+ )之合計原子數的比{[Y3+ ]+[Z4+ ]}/{[In3+ ]+[X2+ ]+[Y3+ ]+[Z4+ ]}為0.1～0.5。若{[Y3+ ]+[Z4+ ]}/{[In3+ ]+[X2+ ]+[Y3+ ]+[Z4+ ]}未達0.1，則對該組成之靶進行濺鍍所獲得之膜的載子濃度會變得過高，電晶體之通道層的開關比會變小。若{[Y3+ ]+[Z4+ ]}/{[In3+ ]+[X2+ ]+[Y3+ ]+[Z4+ ]}超過0.5，則製作靶時之相對密度會變小、體電阻會變高、濺鍍時易於發生異常放電。{[Y3+ ]+[Z4+ ]}/{[In3+ ]+[X2+ ]+[Y3+ ]+[Z4+ ]}更理想為0.15～0.4之範圍，進而理想為0.2～0.35之範圍。
(氧化物燒結體之相對密度)
氧化物燒結體之相對密度與濺鍍時表面之結球(nodule)生成有關。若氧化物燒結體為低密度，則於將該氧化物燒結體加工成靶而濺鍍成膜時，隨著濺鍍成膜之過程，於表面產生銦之低級氧化物即突起狀之稱為結球的高電阻部分，於其後濺鍍時易於成為異常放電之起點。於本發明中，依組成之適當範圍或製造條件之適當化可使氧化物燒結體之相對密度成為98%以上，只要為此程度之高密度則幾乎無因濺鍍時之結球所引起之不良影響。相對密度較佳為99%以上，更佳為99.5%以上。
再者，氧化物燒結體之相對密度可藉由根據將氧化物燒結體加工成特定形狀後之重量與外形尺寸所計算出之密度除以該氧化物燒結體之理論密度而求得。
(氧化物燒結體之體電阻)
氧化物燒結體之體電阻與濺鍍時發生異常放電之容易度有關，若體電阻較高則於濺鍍時易於發生異常放電。於本發明中，依組成之適當範圍或製造條件之適當化可使體電阻成為3mΩcm以下，只要為此程度之低體電阻則幾乎無濺鍍時發生異常放電之不良影響。體電阻較佳為2.7mΩcm以下，更佳為2.5mΩcm以下。
再者，體電阻可藉由四探針法並使用電阻率計而測定。
(氧化物燒結體之製造方法)
本發明之各種組成之氧化物燒結體例如可藉由調整作為原料之氧化銦、氧化鎂等各原料粉體之摻合比或原料粉體之粒徑、粉碎時間、燒結溫度、燒結時間、燒結環境氣體種類等條件而獲得。
較理想為原料粉之平均粒徑為1～2μm。若平均粒徑超過2μm，則燒結體之密度難以提高，故而可單獨或以混合粉之形式對該原料粉進行濕式微粉碎等，而使平均粒徑縮小至約1μm左右。於濕式混合粉碎前進行預燒以提高燒結性亦較為有效。另一方面，難以獲取粒徑未達1μm之原料，又，若粒徑過小則易於引起粒子間之凝聚而難以操作。此處，原料粉之平均粒徑係指藉由雷射繞射式之測定方法所測定的值。較佳為利用噴霧乾燥機等對粉碎後之原料混合粉進行造粒而提高流動性或成形性後，進行成型。成型可採用通常之加壓成形或冷均壓加壓等方法。
其後，燒結成形物而獲得燒結體。較佳為於1400～1600℃下進行2～20小時之燒結。藉此，可使相對密度成為98%以上。若燒結溫度未達1400℃，則密度難以提高，若燒結溫度超過1600℃，則由於構成成分元素之揮發等而使燒結體之組成發生變化，或成為因揮發導致產生空隙而造成密度下降的原因。燒結時之環境氣體可使用大氣，藉由抑制自燒結體揮發之效果，可獲得高密度之燒結體。其中，藉由燒結體之組成，即便將氧氣作為環境氣體亦可獲得充分高密度之燒結體。
(濺鍍成膜)
可藉由對如上述所獲得之氧化物燒結體實施磨削或研磨等加工而製成濺鍍用靶，藉由使用該濺鍍用靶進行成膜，可形成具有與該靶相同組成之氧化物膜。較理想為藉由於加工時，利用平面研磨等方法研磨表面而使表面粗糙度(Ra)成為5μm以下。藉由減小表面粗糙度，可減少成為異常放電之原因之結球生成的起點。
將濺鍍用靶貼附於銅製等支持板並設置於濺鍍裝置內，於適當之真空度、環境氣體、濺鍍功率等適當條件下進行濺鍍，藉此可獲得組成與靶幾乎相同之膜。
於濺鍍法之情形時，較理想為將成膜前之腔室內極限真空度設為2×10-4 Pa以下。若壓力過高，則有由於殘留環境氣體中之雜質之影響而使所獲得之膜之遷移率下降的可能性。
濺鍍氣體可使用氬氣及氧氣之混合氣體。調整混合氣體中之氧氣濃度的方法，例如可藉由使用氬氣100%之儲氣罐、與氬氣中之氧氣為2%之儲氣罐，並利用質量流量控制器適當設定自各自之儲氣罐對腔室之供給流量而進行。此處，所謂混合氣體中之氧氣濃度意指氧分壓/(氧分壓+氬分壓)，亦等於以氧氣之流量除以氧氣與氬氣之合計流量者。氧氣濃度只要根據所期望之載子濃度而適當改變即可，典型可設為1～3%，更典型可設為1～2%。
濺鍍氣體之總壓設為0.3～0.8Pa左右。若總壓低於該範圍，則電漿放電難以進行，即便進行電漿放電，電漿亦變得不穩定。又，若總壓高於該範圍，則產生成膜速度變慢、對生產性造成不良影響等問題。
於靶尺寸為6英吋之情形時，以200～1200W左右之濺鍍功率進行成膜。若濺鍍功率過小，則成膜速度較小、生產性較差，相反，若濺鍍功率過大，則產生靶破裂等問題。200～1200W若換算成濺鍍功率密度則為1.1W/cm2 ～6.6W/cm2 ，較理想為3.2～4.5W/cm2 。此處，所謂濺鍍功率密度係以濺鍍功率除以濺鍍靶之面積而獲得，由於即便為相同之濺鍍功率，濺鍍靶實際所受之功率、成膜速度亦依濺鍍靶尺寸之不同而有所不同，故而為用以統一表達施加於濺鍍靶上之功率的指標。
由氧化物燒結體獲得膜之方法，亦可使用真空蒸鍍法、離子電鍍法、PLD(脈衝雷射蒸鍍)法等，但於產業上易利用者為滿足大面積、高速成膜、放電穩定性等主要條件之DC磁控濺鍍法。
於濺鍍成膜時，無需加熱基板。其原因在於即便不加熱基板，亦可獲得相對高之遷移率，又，無需耗費用以升溫之時間或能量。若不加熱基板而濺鍍成膜，則所獲得之膜成為非晶質。其中，亦可期待藉由加熱基板而獲得與室溫成膜後之退火相同之效果，故而亦可於基板加熱之狀態下進行成膜。
(氧化物膜之載子濃度)
氧化物膜之載子濃度係將該膜使用於電晶體之通道層時與電晶體之各種特性有關聯。若載子濃度過高，則於電晶體關閉時，亦會發生微小電流洩漏，導致開關比下降。另一方面，若載子濃度過低，則流過電晶體之電流變小。於本發明中，根據組成之適當範圍等，可使氧化物膜之載子濃度成為1016 ～1018 cm-3 ，只要為該範圍則可製作特性良好之電晶體。
(氧化物膜之遷移率)
遷移率係電晶體之特性之中最重要的特性之一，較理想為將氧化物半導體用作電晶體之通道層之競爭材料的非晶矽之遷移率為1cm2 /Vs以上。基本上，遷移率越高越佳。根據組成之適當範圍等，本發明之氧化物膜可具有1cm2 /Vs以上之遷移率，較佳為可具有3cm2 /Vs以上之遷移率，更佳為可具有5cm2 /Vs以上之遷移率。藉此，成為優於非晶矽之特性，產業上之可應用性更高。
本發明之氧化物半導體薄膜例如可用作薄膜電晶體之活性層。又，可將使用上述製造方法所獲得之薄膜電晶體用作主動元件，而用於主動矩陣驅動顯示面板。
[實施例]
以下共同揭示本發明之實施例與比較例，該等實施例係為更好地理解本發明及其優點而提供，並無意欲限定本發明。因此，本發明於本發明之技術思想範圍內包含實施例以外之態樣或變形。
於下述實施例及比較例中，燒結體及膜之物性係藉由以下方法而測定。
(A)燒結體及膜之組成
使用SII Nanotechnology公司製造之型式SPS3000並藉由ICP(高頻感應耦合電漿)分析法而求得。
(B)燒結體之相對密度
根據重量及外形尺寸之測定結果、與來自構成元素之理論密度而求得。
(C)燒結體之體電阻
藉由四探針法(JIS K7194)，並使用NPS公司製造之型式Σ-5+裝置而求得。
(D)膜厚
使用段差計(Veeco公司製造，型式Dektak8 STYLUS PROFILER)而求得。
(E)膜之載子濃度及遷移率
將成膜之玻璃基板切割成約10mm見方，並於四角安裝銦電極，將其組裝於霍爾測定裝置(東陽技術公司製造，型式Resitest8200)上而測定。
(F)膜之結晶或非晶質結構
使用RIGAKU公司製造之RINT-1100X射線繞射裝置來判定結晶性。藉由該X射線繞射，未發現背景水平以上之顯著之峰值，根據該結果判斷為非晶質。
(G)粉體之平均粒徑
粉體之平均粒徑係藉由島津製作所製造之SALD-3100而測定。
＜實施例1＞
稱量氧化銦粉(平均粒徑1.0μm)、氧化矽粉(平均粒徑1.0μm)、及氧化鎂粉(平均粒徑1.0μm)以使金屬元素之原子數比(In：Si：Mg)成為0.4：0.3：0.3，並進行濕式混合粉碎。粉碎後之混合粉之平均粒徑為0.8μm。利用噴霧乾燥機對該混合粉進行造粒後，填充於金屬模具中，加壓成形後，在大氣環境中以1450℃之高溫燒結10小時。將所獲得之燒結體加工成直徑6英吋、厚度6mm之圓盤狀而製成濺鍍靶。關於該靶，由重量與外形尺寸之測定結果與理論密度來計算相對密度，結果為99.5%。又，藉由四探針法所測定之燒結體之體電阻為2.2mΩcm。
使用銦作為焊料而將上述所製作之濺鍍靶貼附於銅製支持板，並設置於DC磁控濺鍍裝置(ANELVA製造之SPL-500濺鍍裝置)。玻璃基板係使用康寧1737，將濺鍍條件設為：基板溫度25℃、極限壓力1.2×10-4 Pa、環境氣體Ar99%、氧氣1%、濺鍍壓力(總壓)0.5Pa、施加電力500W，而製作膜厚約100nm之薄膜。於氧化物半導體薄膜之成膜時未發現異常放電。
對所獲得之膜進行霍爾測定，求得載子濃度及遷移率。又，藉由X射線繞射之測定結果，該膜為非晶質。
＜實施例2～實施例12＞
將原料粉之組成比設為表1所記載之各個值，除此以外以與實施例1相同之方式獲得氧化物燒結體及氧化物半導體薄膜。各自之相對密度、體電阻、載子濃度、遷移率如表1所示。又，燒結體及膜之組成分別與原料粉之組成比相同。於該等氧化物半導體薄膜之成膜時未發現異常放電。
＜比較例1～比較例10＞
將原料粉之組成比設為表1所記載之各個值，除此以外，以與實施例1相同之方式獲得氧化物燒結體及氧化物半導體薄膜。各自之相對密度、體電阻、載子濃度、遷移率如表1所示。又，燒結體及膜之組成分別與原料粉之組成比相同。
於實施例1～12中，製作包含Mg及Ca作為2價金屬離子(X2+ )之例、包含B作為3價金屬離子(Y3+ )之例、包含Si作為4價金屬離子(Z4+ )之例的氧化物燒結體。然而，即便製作包含Co或Mn作為2價金屬離子(X2+ )、包含Y或Cr作為3價金屬離子(Y3+ )、包含Ge、Ti或Zr作為4價金屬離子(Z4+ )的氧化物燒結體，由於使用價數分別相同之離子，故而理解為發揮與實施例1～12相同之效果。
於實施例1～12中，載子濃度處於1016 ～1018 cm-3 之範圍內，且遷移率為1cm2 /Vs以上。
另一方面，於比較例1、4、6～10中，載子濃度未達1016 cm-3 。
又，於比較例1、4、6、8、10中，遷移率未達1cm2 /Vs。
又，於比較例2、3、5中，載子濃度超過1018 cm-3 。

Claims (9)

  1. 一種氧化物燒結體，係由3價銦離子(In3+ )、2價金屬離子(X2+ )(其中，X表示選自Mg、Ca、Co及Mn中之1種以上之元素)、3價金屬離子(Y3+ )(其中，Y表示選自B、Y、Cr中之1種以上之元素)或4價金屬離子(Z4+ )(其中，Z表示選自Si、Ge、Ti、Zr中之1種以上之元素)、及氧離子(O2- )所構成，3價銦離子(In3+ )、2價金屬離子(X2+ )、3價金屬離子(Y3+ )、及4價金屬離子(Z4+ )之原子數比分別滿足：0.2≦[In3+ ]/{[In3+ ]+[X2+ ]+[Y3+ ]+[Z4+ ]}≦0.8、0.1≦[X2+ ]/{[In3+ ]+[X2+ ]+[Y3+ ]+[Z4+ ]}≦0.5、及0.1≦{[Y3+ ]+[Z4+ ]}/{[In3+ ]+[X2+ ]+[Y3+ ]+[Z4+ ]}≦0.5。
  2. 如申請專利範圍第1項之氧化物燒結體，其相對密度為98%以上。
  3. 如申請專利範圍第1或2項之氧化物燒結體，其體電阻為3mΩ以下。
  4. 一種氧化物半導體薄膜，係由3價銦離子(In3+ )、2價金屬離子(X2+ )(其中，X表示選自Mg、Ca、Co及Mn中之1種以上之元素)、3價金屬離子(Y3+ )(其中，Y表示選自B、Y、Cr中之1種以上之元素)或4價金屬離子(Z4+ )(其中，Z表示選自Si、Ge、Ti、Zr中之1種以上之元素)、及氧離子(O2- )所構成，3價銦離子(In3+ )、2價金屬離子(X2+ )、3價金屬離子(Y3+ )、及4價金屬離子(Z4+ )之原子數比分別滿足：0.2≦[In3+ ]/{[In3+ ]+[X2+ ]+[Y3+ ]+[Z4+ ]}≦0.8、0.1≦[X2+ ]/{[In3+ ]+[X2+ ]+[Y3+ ]+[Z4+ ]}≦0.5、及0.1≦{[Y3+ ]+[Z4+ ]}/{[In3+ ]+[X2+ ]+[Y3+ ]+[Z4+ ]}≦0.5。
  5. 如申請專利範圍第4項之氧化物半導體薄膜，其為非晶質。
  6. 如申請專利範圍第4或5項之氧化物半導體薄膜，其載子濃度為1016 ～1018 cm-3 。
  7. 如申請專利範圍第4或5項之氧化物半導體薄膜，其遷移率為1cm2 /Vs以上。
  8. 一種薄膜電晶體，具備有申請專利範圍第4或5項之氧化物半導體薄膜作為活性層。
  9. 一種主動矩陣驅動顯示面板，具備有申請專利範圍第8項之薄膜電晶體。
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