TWI415297B - 光電半導體晶片 - Google Patents

光電半導體晶片 Download PDF

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Publication number
TWI415297B
TWI415297B TW098124990A TW98124990A TWI415297B TW I415297 B TWI415297 B TW I415297B TW 098124990 A TW098124990 A TW 098124990A TW 98124990 A TW98124990 A TW 98124990A TW I415297 B TWI415297 B TW I415297B
Authority
TW
Taiwan
Prior art keywords
layer
semiconductor wafer
optoelectronic semiconductor
current
current spreading
Prior art date
Application number
TW098124990A
Other languages
English (en)
Chinese (zh)
Other versions
TW201013992A (en
Inventor
魯茲 何佩
馬提亞 薩巴席
Original Assignee
歐斯朗奧托半導體股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 歐斯朗奧托半導體股份有限公司 filed Critical 歐斯朗奧托半導體股份有限公司
Publication of TW201013992A publication Critical patent/TW201013992A/zh
Application granted granted Critical
Publication of TWI415297B publication Critical patent/TWI415297B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials

Landscapes

  • Led Devices (AREA)
TW098124990A 2008-07-28 2009-07-24 光電半導體晶片 TWI415297B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102008035110A DE102008035110A1 (de) 2008-07-28 2008-07-28 Optoelektronischer Halbleiterchip

Publications (2)

Publication Number Publication Date
TW201013992A TW201013992A (en) 2010-04-01
TWI415297B true TWI415297B (zh) 2013-11-11

Family

ID=41279336

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098124990A TWI415297B (zh) 2008-07-28 2009-07-24 光電半導體晶片

Country Status (8)

Country Link
US (1) US8841685B2 (https=)
EP (1) EP2313935A1 (https=)
JP (1) JP5514819B2 (https=)
KR (1) KR101606604B1 (https=)
CN (1) CN102106008B (https=)
DE (1) DE102008035110A1 (https=)
TW (1) TWI415297B (https=)
WO (1) WO2010012256A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1961613B (zh) * 2004-03-26 2011-06-29 松下电工株式会社 有机发光器件
DE102008048648B4 (de) 2008-09-24 2025-05-15 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
DE102011017196A1 (de) 2011-04-15 2012-10-18 Osram Opto Semiconductors Gmbh Polarisierte Strahlung emittierender Halbleiterchip
DE102015109786A1 (de) 2015-06-18 2016-12-22 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements sowie optoelektronisches Halbleiterbauelement
CN105609596A (zh) * 2015-09-11 2016-05-25 映瑞光电科技(上海)有限公司 具有电流阻挡结构的led垂直芯片及其制备方法
DE102019103638A1 (de) 2019-02-13 2020-08-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches halbleiterbauelement mit abschnitten einer leitfähigen schicht und verfahren zur herstellung eines optoelektronischen halbleiterbauelements

Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11168239A (ja) * 1997-12-05 1999-06-22 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体発光素子
TW471185B (en) * 1999-06-08 2002-01-01 Lumileds Lighting Llc Method of forming transparent contacts to a p-type GaN layer
US20020130327A1 (en) * 2001-03-19 2002-09-19 Bor-Jen Wu Light emitting diodes with spreading and improving light emitting area
US20020195606A1 (en) * 2001-01-16 2002-12-26 Edmond John Adam Group III nitride LED with undoped cladding layer and multiple quantum well
US20030111667A1 (en) * 2001-12-13 2003-06-19 Schubert E. Fred Light-emitting diode with planar omni-directional reflector
US20030141506A1 (en) * 2002-01-28 2003-07-31 Masahiko Sano Nitride semiconductor element with a supporting substrate and a method for producing a nitride semiconductor element
US20040262620A1 (en) * 2002-12-31 2004-12-30 Osram Opto Semiconductors Gmbh Light emitting diode chip with radiation-transmissive electrical current expansion layer
US20050087884A1 (en) * 2003-10-24 2005-04-28 Stokes Edward B. Flip-chip light emitting diode
US20050093002A1 (en) * 2003-10-30 2005-05-05 United Epitaxy Company, Ltd. Light emitting diode device and manufacturing method
JP2005123501A (ja) * 2003-10-20 2005-05-12 Toyoda Gosei Co Ltd 半導体発光素子
US20050253163A1 (en) * 2004-04-30 2005-11-17 Osram Opto Semiconductors Gmbh Optoelectronic component having a plurality of current expansion layers and method for producing it
JP2007207869A (ja) * 2006-01-31 2007-08-16 Rohm Co Ltd 窒化物半導体発光素子
US20070194325A1 (en) * 2006-02-23 2007-08-23 Ying-Che Sung Light emitting diode by use of metal diffusion bonding technology and method of producing light emitting diode
US20070278508A1 (en) * 2004-01-26 2007-12-06 Johannes Baur Thin Film Led Comprising a Current-Dispersing Structure
TW200828642A (en) * 2006-12-18 2008-07-01 Delta Electronics Inc Electroluminescent device, and fabrication method thereof
US20080315220A1 (en) * 2007-06-25 2008-12-25 Dicon Fiberoptics, Inc. High Light Efficiency Solid-State Light Emitting Structure And Methods To Manufacturing The Same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6420736B1 (en) * 2000-07-26 2002-07-16 Axt, Inc. Window for gallium nitride light emitting diode
DE10147886B4 (de) * 2001-09-28 2006-07-13 Osram Opto Semiconductors Gmbh Lumineszenzdiode mit vergrabenem Kontakt und Herstellungsverfahren
JP4635985B2 (ja) 2002-10-03 2011-02-23 日亜化学工業株式会社 発光ダイオード
KR100586949B1 (ko) * 2004-01-19 2006-06-07 삼성전기주식회사 플립칩용 질화물 반도체 발광소자
JP2007281037A (ja) 2006-04-03 2007-10-25 Dowa Holdings Co Ltd 半導体発光素子及びその製造方法
DE102006034847A1 (de) * 2006-04-27 2007-10-31 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
JP2009260316A (ja) * 2008-03-26 2009-11-05 Panasonic Electric Works Co Ltd 半導体発光素子およびそれを用いる照明装置
DE102008035900A1 (de) 2008-04-30 2009-11-05 Osram Opto Semiconductors Gmbh Leuchtdiodenchip

Patent Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11168239A (ja) * 1997-12-05 1999-06-22 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体発光素子
TW471185B (en) * 1999-06-08 2002-01-01 Lumileds Lighting Llc Method of forming transparent contacts to a p-type GaN layer
US20020195606A1 (en) * 2001-01-16 2002-12-26 Edmond John Adam Group III nitride LED with undoped cladding layer and multiple quantum well
US20020130327A1 (en) * 2001-03-19 2002-09-19 Bor-Jen Wu Light emitting diodes with spreading and improving light emitting area
US20030111667A1 (en) * 2001-12-13 2003-06-19 Schubert E. Fred Light-emitting diode with planar omni-directional reflector
US20030141506A1 (en) * 2002-01-28 2003-07-31 Masahiko Sano Nitride semiconductor element with a supporting substrate and a method for producing a nitride semiconductor element
US20050035364A1 (en) * 2002-01-28 2005-02-17 Masahiko Sano Opposed terminal structure having a nitride semiconductor element
US20040262620A1 (en) * 2002-12-31 2004-12-30 Osram Opto Semiconductors Gmbh Light emitting diode chip with radiation-transmissive electrical current expansion layer
JP2005123501A (ja) * 2003-10-20 2005-05-12 Toyoda Gosei Co Ltd 半導体発光素子
US20050087884A1 (en) * 2003-10-24 2005-04-28 Stokes Edward B. Flip-chip light emitting diode
US20050093002A1 (en) * 2003-10-30 2005-05-05 United Epitaxy Company, Ltd. Light emitting diode device and manufacturing method
US20070278508A1 (en) * 2004-01-26 2007-12-06 Johannes Baur Thin Film Led Comprising a Current-Dispersing Structure
US20050253163A1 (en) * 2004-04-30 2005-11-17 Osram Opto Semiconductors Gmbh Optoelectronic component having a plurality of current expansion layers and method for producing it
JP2007207869A (ja) * 2006-01-31 2007-08-16 Rohm Co Ltd 窒化物半導体発光素子
US20070194325A1 (en) * 2006-02-23 2007-08-23 Ying-Che Sung Light emitting diode by use of metal diffusion bonding technology and method of producing light emitting diode
TW200828642A (en) * 2006-12-18 2008-07-01 Delta Electronics Inc Electroluminescent device, and fabrication method thereof
US20080315220A1 (en) * 2007-06-25 2008-12-25 Dicon Fiberoptics, Inc. High Light Efficiency Solid-State Light Emitting Structure And Methods To Manufacturing The Same

Also Published As

Publication number Publication date
DE102008035110A1 (de) 2010-02-11
JP5514819B2 (ja) 2014-06-04
CN102106008B (zh) 2014-12-24
US8841685B2 (en) 2014-09-23
CN102106008A (zh) 2011-06-22
US20110284893A1 (en) 2011-11-24
JP2011529277A (ja) 2011-12-01
WO2010012256A1 (de) 2010-02-04
TW201013992A (en) 2010-04-01
KR101606604B1 (ko) 2016-03-25
KR20110044264A (ko) 2011-04-28
EP2313935A1 (de) 2011-04-27

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MM4A Annulment or lapse of patent due to non-payment of fees