DE102008035110A1 - Optoelektronischer Halbleiterchip - Google Patents

Optoelektronischer Halbleiterchip Download PDF

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Publication number
DE102008035110A1
DE102008035110A1 DE102008035110A DE102008035110A DE102008035110A1 DE 102008035110 A1 DE102008035110 A1 DE 102008035110A1 DE 102008035110 A DE102008035110 A DE 102008035110A DE 102008035110 A DE102008035110 A DE 102008035110A DE 102008035110 A1 DE102008035110 A1 DE 102008035110A1
Authority
DE
Germany
Prior art keywords
current spreading
semiconductor chip
spreading layer
layer
optoelectronic semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102008035110A
Other languages
German (de)
English (en)
Inventor
Lutz Dr. Höppel
Matthias Dr. Sabathil
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE102008035110A priority Critical patent/DE102008035110A1/de
Priority to JP2011520319A priority patent/JP5514819B2/ja
Priority to CN200980129527.1A priority patent/CN102106008B/zh
Priority to PCT/DE2009/000917 priority patent/WO2010012256A1/de
Priority to KR1020117004570A priority patent/KR101606604B1/ko
Priority to EP09775928A priority patent/EP2313935A1/de
Priority to US13/056,589 priority patent/US8841685B2/en
Priority to TW098124990A priority patent/TWI415297B/zh
Publication of DE102008035110A1 publication Critical patent/DE102008035110A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials

Landscapes

  • Led Devices (AREA)
DE102008035110A 2008-07-28 2008-07-28 Optoelektronischer Halbleiterchip Withdrawn DE102008035110A1 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE102008035110A DE102008035110A1 (de) 2008-07-28 2008-07-28 Optoelektronischer Halbleiterchip
JP2011520319A JP5514819B2 (ja) 2008-07-28 2009-06-29 オプトエレクトロニクス半導体チップ
CN200980129527.1A CN102106008B (zh) 2008-07-28 2009-06-29 光电子半导体芯片
PCT/DE2009/000917 WO2010012256A1 (de) 2008-07-28 2009-06-29 Optoelektronischer halbleiterchip
KR1020117004570A KR101606604B1 (ko) 2008-07-28 2009-06-29 광전 반도체칩
EP09775928A EP2313935A1 (de) 2008-07-28 2009-06-29 Optoelektronischer halbleiterchip
US13/056,589 US8841685B2 (en) 2008-07-28 2009-06-29 Optoelectronic semiconductor chip
TW098124990A TWI415297B (zh) 2008-07-28 2009-07-24 光電半導體晶片

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102008035110A DE102008035110A1 (de) 2008-07-28 2008-07-28 Optoelektronischer Halbleiterchip

Publications (1)

Publication Number Publication Date
DE102008035110A1 true DE102008035110A1 (de) 2010-02-11

Family

ID=41279336

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102008035110A Withdrawn DE102008035110A1 (de) 2008-07-28 2008-07-28 Optoelektronischer Halbleiterchip

Country Status (8)

Country Link
US (1) US8841685B2 (https=)
EP (1) EP2313935A1 (https=)
JP (1) JP5514819B2 (https=)
KR (1) KR101606604B1 (https=)
CN (1) CN102106008B (https=)
DE (1) DE102008035110A1 (https=)
TW (1) TWI415297B (https=)
WO (1) WO2010012256A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008048648B4 (de) 2008-09-24 2025-05-15 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1961613B (zh) * 2004-03-26 2011-06-29 松下电工株式会社 有机发光器件
DE102011017196A1 (de) 2011-04-15 2012-10-18 Osram Opto Semiconductors Gmbh Polarisierte Strahlung emittierender Halbleiterchip
DE102015109786A1 (de) 2015-06-18 2016-12-22 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements sowie optoelektronisches Halbleiterbauelement
CN105609596A (zh) * 2015-09-11 2016-05-25 映瑞光电科技(上海)有限公司 具有电流阻挡结构的led垂直芯片及其制备方法
DE102019103638A1 (de) 2019-02-13 2020-08-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches halbleiterbauelement mit abschnitten einer leitfähigen schicht und verfahren zur herstellung eines optoelektronischen halbleiterbauelements

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10147886A1 (de) * 2001-09-28 2003-04-24 Osram Opto Semiconductors Gmbh Lumineszenzdiode und Herstellungsverfahren
DE102004029216A1 (de) * 2004-01-19 2005-08-11 Samsung Electro-Mechanics Co., Ltd., Suwon Flip-Chip-Nitrid-Halbleiter-Leuchtdiode
DE102006034847A1 (de) * 2006-04-27 2007-10-31 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip

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JPH11168239A (ja) * 1997-12-05 1999-06-22 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体発光素子
US6287947B1 (en) * 1999-06-08 2001-09-11 Lumileds Lighting, U.S. Llc Method of forming transparent contacts to a p-type GaN layer
US6420736B1 (en) * 2000-07-26 2002-07-16 Axt, Inc. Window for gallium nitride light emitting diode
US6906352B2 (en) 2001-01-16 2005-06-14 Cree, Inc. Group III nitride LED with undoped cladding layer and multiple quantum well
US6445007B1 (en) 2001-03-19 2002-09-03 Uni Light Technology Inc. Light emitting diodes with spreading and improving light emitting area
US6784462B2 (en) 2001-12-13 2004-08-31 Rensselaer Polytechnic Institute Light-emitting diode with planar omni-directional reflector
KR100909733B1 (ko) 2002-01-28 2009-07-29 니치아 카가쿠 고교 가부시키가이샤 지지기판을 갖는 질화물 반도체소자 및 그 제조방법
JP4635985B2 (ja) 2002-10-03 2011-02-23 日亜化学工業株式会社 発光ダイオード
DE10261676A1 (de) 2002-12-31 2004-07-22 Osram Opto Semiconductors Gmbh Leuchtdioden-Chip mit strahlungsdurchlässiger elektrischer Stromaufweitungsschicht
JP4259268B2 (ja) 2003-10-20 2009-04-30 豊田合成株式会社 半導体発光素子
US7119372B2 (en) * 2003-10-24 2006-10-10 Gelcore, Llc Flip-chip light emitting diode
US7012281B2 (en) 2003-10-30 2006-03-14 Epistar Corporation Light emitting diode device and manufacturing method
CN100411209C (zh) 2004-01-26 2008-08-13 奥斯兰姆奥普托半导体有限责任公司 具有电流扩展结构的薄膜led
DE102004025610A1 (de) 2004-04-30 2005-11-17 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit mehreren Stromaufweitungsschichten und Verfahren zu dessen Herstellung
JP2007207869A (ja) 2006-01-31 2007-08-16 Rohm Co Ltd 窒化物半導体発光素子
TWI288979B (en) 2006-02-23 2007-10-21 Arima Optoelectronics Corp Light emitting diode bonded with metal diffusion and manufacturing method thereof
JP2007281037A (ja) 2006-04-03 2007-10-25 Dowa Holdings Co Ltd 半導体発光素子及びその製造方法
TWI322522B (en) 2006-12-18 2010-03-21 Delta Electronics Inc Electroluminescent device, and fabrication method thereof
US7683380B2 (en) 2007-06-25 2010-03-23 Dicon Fiberoptics, Inc. High light efficiency solid-state light emitting structure and methods to manufacturing the same
JP2009260316A (ja) * 2008-03-26 2009-11-05 Panasonic Electric Works Co Ltd 半導体発光素子およびそれを用いる照明装置
DE102008035900A1 (de) 2008-04-30 2009-11-05 Osram Opto Semiconductors Gmbh Leuchtdiodenchip

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10147886A1 (de) * 2001-09-28 2003-04-24 Osram Opto Semiconductors Gmbh Lumineszenzdiode und Herstellungsverfahren
DE102004029216A1 (de) * 2004-01-19 2005-08-11 Samsung Electro-Mechanics Co., Ltd., Suwon Flip-Chip-Nitrid-Halbleiter-Leuchtdiode
DE102006034847A1 (de) * 2006-04-27 2007-10-31 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008048648B4 (de) 2008-09-24 2025-05-15 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip

Also Published As

Publication number Publication date
JP5514819B2 (ja) 2014-06-04
CN102106008B (zh) 2014-12-24
US8841685B2 (en) 2014-09-23
CN102106008A (zh) 2011-06-22
US20110284893A1 (en) 2011-11-24
JP2011529277A (ja) 2011-12-01
WO2010012256A1 (de) 2010-02-04
TWI415297B (zh) 2013-11-11
TW201013992A (en) 2010-04-01
KR101606604B1 (ko) 2016-03-25
KR20110044264A (ko) 2011-04-28
EP2313935A1 (de) 2011-04-27

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OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
R005 Application deemed withdrawn due to failure to request examination