TWI412045B - Laminated ceramic capacitors - Google Patents

Laminated ceramic capacitors Download PDF

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TWI412045B
TWI412045B TW98109473A TW98109473A TWI412045B TW I412045 B TWI412045 B TW I412045B TW 98109473 A TW98109473 A TW 98109473A TW 98109473 A TW98109473 A TW 98109473A TW I412045 B TWI412045 B TW I412045B
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dielectric
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barium titanate
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TW201007788A (en
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Masahiro Nishigaki
Hideyuki Osuzu
Jun Ueno
Hiroaki Mino
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Kyocera Corp
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Abstract

Disclosed is a laminated ceramic capacitor comprising a dielectric ceramic that is composed mainly of barium titanate and contains vanadium, magnesium, manganese, rare earth elements stated in the description, and terbium in respective proportions specified in the description. The crystal constituting the dielectric ceramic comprises a first group of crystals formed of first crystal grains having a calcium concentration of not more than 0.2 atomic% and a second group of crystals formed of second crystal grains having a calcium concentration of not less than 0.4 atomic%. The dielectric ceramic satisfies a requirement of C2/(C1 + C2) of 0.3 to 0.7 wherein C1 represents the area of the first crystal grains that appear on a polished surface of the dielectric ceramic; and C2 represents the area of the second crystal grains that appear on the polished surface of the dielectric ceramic. In an X-ray diffraction chart for the dielectric ceramic, the diffraction intensity of (200) plane attributable to cubic barium titanate is larger than the diffraction intensity of (002) plane attributable to tetragonal barium titanate. The Curie temperature is 95 to 105°C.

Description

積層陶瓷電容器Multilayer ceramic capacitor

本發明係關於一種積層陶瓷電容器,尤其係關於一種介電質層係由鈣濃度不同之鈦酸鋇所構成之小型且高電容的積層陶瓷電容器。The present invention relates to a multilayer ceramic capacitor, and more particularly to a small-sized and high-capacitance multilayer ceramic capacitor in which a dielectric layer is composed of barium titanate having a different calcium concentration.

近年來,伴隨著行動電話等移動式設備之普及以及作為個人電腦等之主要零件的半導體元件之高速、高頻化,對於搭載在此種電子設備上之積層陶瓷電容器之小型、高電容化的要求越來越高。因此,對於構成積層陶瓷電容器之介電質層,要求薄層化以及高積層化。In recent years, with the spread of mobile devices such as mobile phones and the high-speed and high-frequency of semiconductor devices, which are main components of personal computers, etc., the multilayer ceramic capacitors mounted on such electronic devices are small and highly capacitive. Increasingly demanding. Therefore, for the dielectric layer constituting the laminated ceramic capacitor, thinning and high buildup are required.

另外,作為成為構成積層陶瓷電容器之介電質層之介電質陶瓷,先前以來一直採用將鈦酸鋇作為主成分之介電質材料。近年來,正在開發將鈦酸鋇粉末與使鈣固溶於鈦酸鋇中之粉末混合使用而使該等介電質材料共存之複合系介電質材料,並應用於積層陶瓷電容器中(例如參照專利文獻1)。Further, as a dielectric ceramic which is a dielectric layer constituting a laminated ceramic capacitor, a dielectric material containing barium titanate as a main component has been conventionally used. In recent years, a composite dielectric material in which barium titanate powder is mixed with a powder in which calcium is dissolved in barium titanate to coexist the dielectric materials is being developed and applied to a laminated ceramic capacitor (for example). Refer to Patent Document 1).

於使用上述鈦酸鋇粉末及使鈣固溶於鈦酸鋇中之粉末而製作之介電質陶瓷中,使用鎂、稀土元素及錳之各氧化物作為添加劑。然後,於煅燒時,使該等添加劑固溶於鈦酸鋇粉末及使鈣固溶於鈦酸鋇中之粉末各自之表面附近,而成為具有所謂核-殼構造之晶粒,來實現介電常數及介電常數之溫度特性等之提高。In the dielectric ceramic produced by using the above-described barium titanate powder and a powder in which calcium is dissolved in barium titanate, each oxide of magnesium, a rare earth element, and manganese is used as an additive. Then, at the time of calcination, the additives are solid-dissolved in the vicinity of the surface of each of the barium titanate powder and the powder in which the calcium is solid-dissolved in the barium titanate to form a crystal having a so-called core-shell structure to realize dielectric. The constant and the temperature characteristics of the dielectric constant are improved.

此處,所謂晶粒之核-殼構造,係指作為晶粒之中心部之核部、與作為外殼部之殼部形成物理上、化學上不同之相的構造。將鈦酸鋇作為主成分之晶粒成為核部由正方晶之結晶相所佔據、殼部由立方晶之結晶相所佔據的狀態。Here, the core-shell structure of a crystal grain refers to a structure in which a core portion which is a central portion of a crystal grain and a shell portion which is a shell portion form a physically and chemically different phase. The crystal grains containing barium titanate as a main component have a state in which the core portion is occupied by the crystal phase of the tetragonal crystal and the shell portion is occupied by the crystal phase of the cubic crystal.

將由此種核-殼構造之晶粒所構成之介電質陶瓷作為介電質層之積層陶瓷電容器,介電常數提高,並且介電常數之溫度特性滿足X7R(以25℃為基準時之介電常數之溫度變化率於-55~125℃為±15%以內)。另外,使所施加AC電壓增加時之介電常數之變化小。A dielectric ceramic having a dielectric ceramic composed of such a core-shell structure is used as a multilayer ceramic capacitor of a dielectric layer, and the dielectric constant is improved, and the temperature characteristic of the dielectric constant satisfies X7R (based on 25 ° C as a reference) The temperature change rate of the electric constant is within ±15% at -55 to 125 °C). Further, the change in the dielectric constant when the applied AC voltage is increased is small.

然而,對於上述積層陶瓷電容器而言,若使介電質層之厚度薄層化至例如2 μm左右,則存在高溫負載試驗中之壽命特性大幅度地下降之問題。However, in the above-mentioned multilayer ceramic capacitor, when the thickness of the dielectric layer is thinned to, for example, about 2 μm, there is a problem that the life characteristics in the high-temperature load test are largely lowered.

[專利文獻1]日本專利特開2001-156450號公報[Patent Document 1] Japanese Patent Laid-Open Publication No. 2001-156450

本發明之課題在於提供一種具有如下介電質層之積層陶瓷電容器,該介電質層係高介電係數且介電常數之溫度特性之穩定性優異,並且使AC電壓增加時之介電常數之增加較小,且於高溫負載試驗中之壽命特性優異。An object of the present invention is to provide a multilayer ceramic capacitor having a dielectric layer which is excellent in stability of temperature characteristics of a high dielectric constant and a dielectric constant, and a dielectric constant when an AC voltage is increased. The increase is small and the life characteristics are excellent in the high temperature load test.

本發明之積層陶瓷電容器係將介電質層與內部電極層交替積層而形成,該介電質層係由將鈦酸鋇作為主成分,且含 有鈣、鎂、釩、錳及鋱以及自釔、鏑、鈥及鉺中選擇之至少1種稀土元素之介電質陶瓷所構成。上述介電質陶瓷中,相對於構成上述鈦酸鋇之鈦100莫耳,含有以V2 O5 換算計為0.02~0.2莫耳之上述釩,以MgO換算計為0.2~0.8莫耳之上述鎂,以MnO換算計為0.1~0.5莫耳之上述錳,以RE2 O3 換算計為0.3~0.8莫耳之自釔、鏑、鈥及鉺中選擇之至少1種上述稀土元素,以及以Tb4 O7 換算計為0.02~0.2莫耳之上述鋱。構成上述介電質陶瓷之結晶具有:第1結晶群組,其係由將上述鈦酸鋇作為主成分、且上述鈣之濃度為0.2原子%以下之第1晶粒所組成;以及第2結晶群組,其係由將上述鈦酸鋇作為主成分、且上述鈣之濃度為0.4原子%以上之第2晶粒所組成。當將於上述介電質陶瓷之研磨面上所觀察到之上述第1晶粒的面積設為C1、將上述第2晶粒之面積設為C2時,C2/(C1+C2)為0.3~0.7。於上述介電質陶瓷之X射線繞射圖中,顯示立方晶之鈦酸鋇之(200)面的繞射強度大於顯示正方晶之鈦酸鋇之(002)面的繞射強度。居里溫度為95~105℃。The multilayer ceramic capacitor of the present invention is formed by alternately laminating a dielectric layer and an internal electrode layer containing barium titanate as a main component and containing calcium, magnesium, vanadium, manganese, and lanthanum, and self-enthalpy. A dielectric ceramic of at least one rare earth element selected from the group consisting of ruthenium, osmium and iridium. In the above-mentioned dielectric ceramic, the above-mentioned vanadium in an amount of 0.02 to 0.2 mol in terms of V 2 O 5 is contained in the range of 0.2 to 0.8 mol in terms of MgO, in terms of 100 mol of titanium constituting the barium titanate. Magnesium, in terms of MnO, is 0.1 to 0.5 mol of the above-mentioned manganese, and is at least one of the above-mentioned rare earth elements selected from the group consisting of ruthenium, osmium, iridium and osmium in an amount of 0.3 to 0.8 mol in terms of RE 2 O 3 . The above-mentioned enthalpy of 0.02 to 0.2 m is calculated in terms of Tb 4 O 7 conversion. The crystal constituting the dielectric ceramic has a first crystal group composed of the first crystal grains having the barium titanate as a main component and the calcium concentration of 0.2 atom% or less; and the second crystal The group consists of a second crystal grain having the above-mentioned barium titanate as a main component and having a calcium concentration of 0.4 atom% or more. When the area of the first crystal grain observed on the polished surface of the dielectric ceramic is C1 and the area of the second crystal grain is C2, C2/(C1+C2) is 0.3~ 0.7. In the X-ray diffraction pattern of the above dielectric ceramic, it is shown that the diffraction intensity of the (200) plane of the cubic crystal of barium titanate is larger than the diffraction intensity of the (002) plane of the barium titanate exhibiting tetragonal crystal. The Curie temperature is 95~105 °C.

再者,上述稀土元素表示為RE,其係基於元素週期表中之稀土元素之英文記法(Rare earth)者。Further, the above rare earth element is represented by RE, which is based on the English notation (Rare earth) of the rare earth element in the periodic table.

根據本發明,可獲得具有如下介電質層之積層陶瓷電容器,該介電質層係高介電係數且可減小介電常數之溫度變化 率,並且使所施加之AC電壓增大時之介電常數之增加較小(介電常數之AC電壓依存性較小),而且於高溫負載試驗中之壽命優異。According to the present invention, a multilayer ceramic capacitor having a dielectric layer having a high dielectric constant and a decrease in dielectric constant temperature change can be obtained. The rate is small, and the increase in the dielectric constant when the applied AC voltage is increased is small (the AC voltage dependence of the dielectric constant is small), and the lifetime in the high-temperature load test is excellent.

根據圖1及圖2,對本發明之積層陶瓷電容器加以詳細說明。如圖1所示,本發明之積層陶瓷電容器係於電容器本體1之兩端部形成有外部電極3。外部電極3例如係對Cu或Cu與Ni之合金膏進行燒製而形成。The multilayer ceramic capacitor of the present invention will be described in detail with reference to Figs. 1 and 2 . As shown in FIG. 1, the multilayer ceramic capacitor of the present invention has external electrodes 3 formed at both end portions of the capacitor body 1. The external electrode 3 is formed, for example, by firing an alloy paste of Cu or Cu and Ni.

電容器本體1係將由介電質陶瓷所構成之介電質層5與內部電極層7交替積層而構成。圖1中,將介電質層5與內部電極層7之積層狀態加以簡化表示,本發明之積層陶瓷電容器係介電質層5與內部電極層7甚至達至數百層之積層體。The capacitor body 1 is configured by alternately laminating a dielectric layer 5 made of a dielectric ceramic and an internal electrode layer 7. In Fig. 1, the laminated state of the dielectric layer 5 and the internal electrode layer 7 is simplified. The multilayer ceramic capacitor of the present invention has a dielectric layer 5 and an internal electrode layer 7 of up to several hundred layers.

如圖2所示,由介電質陶瓷所構成之介電質層5係由晶粒9與晶界相11所構成。該介電質層5之厚度較理想為2 μm以下,尤其理想為1 μm以下。藉此,可使積層陶瓷電容器小型、高電容化。再者,若介電質層5之厚度為0.4 μm以上,則可減小靜電電容之不均一,且可使電容溫度特性穩定化。As shown in FIG. 2, the dielectric layer 5 composed of a dielectric ceramic is composed of crystal grains 9 and a grain boundary phase 11. The thickness of the dielectric layer 5 is preferably 2 μm or less, and particularly preferably 1 μm or less. Thereby, the multilayer ceramic capacitor can be made small and high in capacitance. Further, when the thickness of the dielectric layer 5 is 0.4 μm or more, the unevenness of the capacitance can be reduced, and the capacitance temperature characteristics can be stabilized.

作為形成內部電極層7之材料,就即便高積層化亦可對製造成本加以抑制之方面而言,較理想為Ni或Cu等卑金屬,尤其就可與本發明中之介電質層5同時進行煅燒之方面而言,更理想為Ni。As a material for forming the internal electrode layer 7, even if the high buildup can suppress the manufacturing cost, it is preferable to use a base metal such as Ni or Cu, in particular, simultaneously with the dielectric layer 5 of the present invention. In terms of calcination, Ni is more preferable.

構成本發明之積層陶瓷電容器中之介電質層5的介電質陶瓷係由將鈦酸鋇作為主成分,且含有鈣(Ca)、鎂(Mg)、釩(V)、錳(Mn)及鋱(Tb)以及自釔(Y)、鏑(Dy)、鈥(Ho)及鉺(Er)中選擇之至少1種稀土元素(RE)之燒結體所構成。The dielectric ceramic constituting the dielectric layer 5 in the multilayer ceramic capacitor of the present invention contains barium titanate as a main component and contains calcium (Ca), magnesium (Mg), vanadium (V), and manganese (Mn). And strontium (Tb) and a sintered body of at least one rare earth element (RE) selected from the group consisting of yttrium (Y), yttrium (Dy), yttrium (Ho), and yttrium (Er).

上述燒結體中,相對於構成鈦酸鋇之鈦100莫耳,含有以V2 O5 換算計為0.02~0.2莫耳之釩,以MgO換算計為0.2~0.8莫耳之鎂,以MnO換算計為0.1~0.5莫耳之錳,以RE2 O3 換算計為0.3~0.8莫耳之自釔、鏑、鈥及鉺中選擇之至少1種稀土元素,以及以Tb4 O7 換算計為0.02~0.2莫耳之鋱。The sintered body contains 0.02 to 0.2 m of vanadium in terms of V 2 O 5 and 0.2 to 0.8 m of magnesium in terms of MgO, in terms of MnO, in terms of 100 mol of titanium constituting barium titanate. It is 0.1 to 0.5 mol of manganese, and is at least one rare earth element selected from the group consisting of ruthenium, osmium, iridium and osmium in the range of 0.3 to 0.8 mol in terms of RE 2 O 3 , and is calculated in terms of Tb 4 O 7 0.02~0.2 moles.

另外,形成於該介電質陶瓷中之晶粒9係由第1晶粒9a與第2晶粒9b所構成,該第1晶粒9a構成由將鈦酸鋇作為主成分、且鈣濃度為0.2原子%以下之晶粒所組成之第1結晶群組,該第2晶粒9b構成由將鈦酸鋇作為主成份、且鈣濃度為0.4原子%以上之晶粒所組成之第2結晶群組。於該晶粒9、9之間形成有晶界相11。晶界相11之主成分為玻璃成分,且部分地含有介電質陶瓷中所含之上述鎂、釩、錳、鋱、稀土元素等之副成分。Further, the crystal grains 9 formed in the dielectric ceramic are composed of the first crystal grains 9a and the second crystal grains 9b, and the first crystal grains 9a are composed of barium titanate as a main component and having a calcium concentration of a first crystal group composed of crystal grains of 0.2 atom% or less, and the second crystal grain 9b constitutes a second crystal group composed of crystal grains having barium titanate as a main component and having a calcium concentration of 0.4 atom% or more. group. A grain boundary phase 11 is formed between the crystal grains 9, 9. The main component of the grain boundary phase 11 is a glass component, and partially contains an auxiliary component such as magnesium, vanadium, manganese, cerium, or a rare earth element contained in the dielectric ceramic.

於該介電質陶瓷中,第1晶粒9a與第2晶粒9b之比例為,當將於介電質陶瓷之研磨面上所觀察到之上述第1晶粒9a的面積設為C1、將上述第2晶粒9b之面積設為C2時,C2/(C1+C2)為0.3~0.7。In the dielectric ceramic, the ratio of the first crystal grains 9a to the second crystal grains 9b is such that the area of the first crystal grains 9a observed on the polished surface of the dielectric ceramic is C1. When the area of the second crystal grain 9b is C2, C2/(C1+C2) is 0.3 to 0.7.

進而,於上述介電質陶瓷之X射線繞射圖中,顯示立方晶之鈦酸鋇之(200)面的繞射強度大於顯示正方晶之鈦酸鋇之(002)面的繞射強度,且居里溫度為95~105℃。Further, in the X-ray diffraction pattern of the dielectric ceramic, the diffraction intensity of the (200) plane of the cubic crystal of barium titanate is larger than the diffraction intensity of the (002) plane of the barium titanate exhibiting tetragonal, And the Curie temperature is 95~105 °C.

由此種特定構成所構成之本發明之介電質陶瓷係室溫(25℃)之介電常數為3500以上,介電損失為12.5%以下,且介電常數之溫度特性滿足X6S(即,以25℃為基準時之介電常數之溫度變化率於-55~105℃為±22%以內,以下有時簡稱為「X6S」)。另外,該介電質陶瓷係將AC電壓設為1 V時之介電常數為將AC電壓設為0.01 V時之介電常數之2倍以下。進而,該介電質陶瓷於高溫負載試驗(溫度:105℃,電壓:額定電壓之1.5倍,試驗時間:1000小時,以下有時簡稱為「高溫負載試驗」)中不良之發生得到抑制。因此,具有由該介電質陶瓷所構成之介電質層5的本發明之積層陶瓷電容器具有較高之可靠性。以下,對其理由加以詳細說明。The dielectric ceramic of the present invention having such a specific configuration has a dielectric constant at room temperature (25 ° C) of 3,500 or more, a dielectric loss of 12.5% or less, and a temperature characteristic of a dielectric constant satisfying X6S (ie, The temperature change rate of the dielectric constant at 25 ° C is within ±22% from -55 to 105 ° C, and may be simply referred to as "X6S" hereinafter. Further, in the dielectric ceramic, when the AC voltage is 1 V, the dielectric constant is twice or less the dielectric constant when the AC voltage is 0.01 V. Further, in the high-temperature load test (temperature: 105 ° C, voltage: 1.5 times the rated voltage, test time: 1000 hours, hereinafter sometimes referred to as "high-temperature load test"), the occurrence of defects is suppressed. Therefore, the multilayer ceramic capacitor of the present invention having the dielectric layer 5 composed of the dielectric ceramic has high reliability. Hereinafter, the reason will be described in detail.

即,相對於構成鈦酸鋇之鈦100莫耳,若釩之含量以V2 O5 換算計少於0.02莫耳,則高溫負載試驗中之可靠性下降。另一方面,若釩之含量以V2 O5 換算計多於0.2莫耳,則室溫下之介電常數變低。In other words, when the content of vanadium is less than 0.02 mol in terms of V 2 O 5 with respect to 100 mol of titanium constituting barium titanate, the reliability in the high-temperature load test is lowered. On the other hand, if the content of vanadium is more than 0.2 mol in terms of V 2 O 5 , the dielectric constant at room temperature becomes low.

相對於構成鈦酸鋇之鈦100莫耳,若鎂之含量以MgO換算計少於0.2莫耳,則介電常數之溫度特性容易大幅度地偏離+側,而不滿足作為靜電電容之溫度特性之X6S條件。另 一方面,若鎂之含量多於0.8莫耳,則室溫下之介電常數變低。With respect to 100 mol of titanium constituting barium titanate, if the content of magnesium is less than 0.2 mol in terms of MgO, the temperature characteristic of the dielectric constant is likely to largely deviate from the + side, and the temperature characteristic as an electrostatic capacitance is not satisfied. The X6S condition. another On the one hand, if the content of magnesium is more than 0.8 mol, the dielectric constant at room temperature becomes low.

相對於構成鈦酸鋇之鈦100莫耳,若錳之含量以MnO換算計少於0.1莫耳,則介電質層5之絕緣電阻下降,因此高溫負載試驗中之可靠性下降。另一方面,若錳之含量以MnO換算計多於0.5莫耳,則室溫下之介電常數變低。With respect to 100 mol of titanium constituting barium titanate, if the content of manganese is less than 0.1 mol in terms of MnO, the insulation resistance of the dielectric layer 5 is lowered, so that the reliability in the high-temperature load test is lowered. On the other hand, if the content of manganese is more than 0.5 mol in terms of MnO, the dielectric constant at room temperature becomes low.

相對於構成鈦酸鋇之鈦100莫耳,若自釔、鏑、鈥及鉺中選擇之至少1種稀土元素之含量以RE2 O3 換算計少於0.3莫耳,則高溫負載試驗中之可靠性下降。另一方面,若上述稀土元素之含量以RE2 O3 換算計多於0.8莫耳,則室溫下之介電常數變低。The content of at least one rare earth element selected from lanthanum, cerium, lanthanum and cerium is less than 0.3 mol in terms of RE 2 O 3 relative to 100 mol of titanium constituting barium titanate, in the high temperature load test Reliability is declining. On the other hand, when the content of the rare earth element is more than 0.8 mol in terms of RE 2 O 3 , the dielectric constant at room temperature becomes low.

相對於之構成鈦酸鋇之鈦100莫耳,若鋱之含量以Tb4 O7 換算計少於0.02莫耳,則於作為主成分之鈦酸鋇中的釩、鎂、錳及稀土元素之固溶量變少。因此,介電質陶瓷之居里溫度相當於顯示核-殼構造之鈦酸鋇之居里溫度(約125℃),高溫負載試驗下之可靠性下降。另一方面,若鋱之含量以Tb4 O7 換算計多於0.2莫耳,則於作為主成分之鈦酸鋇中的釩、鎂、錳及稀土元素之固溶量變多。因此,與將AC電壓設為0.01 V時之介電常數相比,將AC電壓設為1 V時之介電常數增大(介電常數之AC電壓依存性較大),額定電壓變化時之介電質陶瓷之靜電電容之變化變大。100 parts of titanium constituting barium titanate, and if the content of strontium is less than 0.02 mol in terms of Tb 4 O 7 , vanadium, magnesium, manganese and rare earth elements in barium titanate as a main component The amount of solid solution is reduced. Therefore, the Curie temperature of the dielectric ceramic is equivalent to the Curie temperature (about 125 ° C) of the barium titanate showing the core-shell structure, and the reliability under the high temperature load test is lowered. On the other hand, when the content of niobium is more than 0.2 mol in terms of Tb 4 O 7 , the amount of solid solution of vanadium, magnesium, manganese, and a rare earth element in barium titanate as a main component increases. Therefore, compared with the dielectric constant when the AC voltage is set to 0.01 V, the dielectric constant increases when the AC voltage is 1 V (the AC voltage dependence of the dielectric constant is large), and the rated voltage changes. The change in the electrostatic capacitance of the dielectric ceramic becomes large.

作為較佳之介電質陶瓷之組成,較佳為相對於構成鈦酸鋇 之鈦100莫耳而含有以V2 O5 換算計為0.02~0.08莫耳之釩,以MgO換算計為0.3~0.6莫耳之鎂,以MnO換算計為0.2~0.4莫耳之錳,以RE2 O3 換算計為0.4~0.6莫耳之自釔、鏑、鈥及鉺中選擇之至少1種稀土元素,以及以Tb4 O7 換算計為0.02~0.08莫耳之鋱。The composition of the preferred dielectric ceramic is preferably 0.02 to 0.08 mol of vanadium in terms of V 2 O 5 with respect to 100 mol of titanium constituting barium titanate, and 0.3 to 0.6 in terms of MgO. Molybdenum magnesium, which is 0.2 to 0.4 mol of manganese in terms of MnO, and is at least one rare earth element selected from the group consisting of ~, 镝, 鈥, and 0.4 in the range of 0.4 to 0.6 mol in terms of RE 2 O 3 , and It is 0.02 to 0.08 moles in terms of Tb 4 O 7 conversion.

由該組成所構成之介電質陶瓷係可將室溫之介電常數提高至3700以上,且可使將AC電壓設為1 V時之介電常數成為將AC電壓設為0.01 V時之介電常數之1.5倍以下。再者,作為上述稀土元素,就可獲得更高之介電常數、且絕緣電阻較高之方面而言,尤佳為釔。The dielectric ceramics having the composition can increase the dielectric constant at room temperature to 3700 or more, and the dielectric constant when the AC voltage is 1 V can be set to be 0.01 V when the AC voltage is set to 0.01 V. The electrical constant is 1.5 times or less. Further, as the rare earth element, a higher dielectric constant and a higher insulation resistance are preferable.

另外,上述介電質陶瓷較理想為,相對於構成鈦酸鋇之鈦100莫耳而含有以Tb4 O7 換算計為0.05~0.08莫耳之鋱。藉此,可減小介電質陶瓷之介電常數之變異係數(σ/x,σ:標準偏差,x:平均值)。因此,於製造積層陶瓷電容器時,即便煅燒溫度存在差幅,亦可獲得靜電電容之不均一較小之積層陶瓷電容器。Further, the dielectric ceramic is preferably contained in an amount of 0.05 to 0.08 mol in terms of Tb 4 O 7 with respect to 100 mol of titanium constituting barium titanate. Thereby, the coefficient of variation (σ/x, σ: standard deviation, x: average value) of the dielectric constant of the dielectric ceramic can be reduced. Therefore, in the case of manufacturing a laminated ceramic capacitor, even if there is a difference in the calcination temperature, a laminated ceramic capacitor having a small uneven capacitance can be obtained.

另外,如上所述,於上述介電質陶瓷中,第1晶粒9a與第2晶粒9b之比例為,當將於介電質陶瓷之研磨面上所觀察到之上述第1晶粒9a的面積設為C1、將上述第2晶粒9b之面積設為C2時,C2/(C1+C2)為0.3~0.7。Further, as described above, in the dielectric ceramic, the ratio of the first crystal grains 9a to the second crystal grains 9b is such that the first crystal grains 9a are observed on the polished surface of the dielectric ceramic. When the area is C1 and the area of the second crystal grain 9b is C2, C2/(C1+C2) is 0.3 to 0.7.

即,若C2/(C1+C2)低於0.3,則含有Ca之第2晶粒9b之比例較少,故室溫下之介電常數變低。另一方面,若 C2/(C1+C2)多於0.7,則雖室溫下之介電常數增加,但高溫負載試驗中之壽命下降。That is, when C2/(C1+C2) is less than 0.3, the ratio of the second crystal grains 9b containing Ca is small, so the dielectric constant at room temperature becomes low. On the other hand, if When C2/(C1+C2) is more than 0.7, the dielectric constant at room temperature increases, but the lifetime in the high-temperature load test decreases.

C2/(C1+C2)尤其理想為0.4~0.6,若為該範圍,則可將室溫之介電質陶瓷之介電常數提高至4000以上。C2/(C1+C2) is particularly preferably 0.4 to 0.6. If it is in this range, the dielectric constant of the dielectric ceramic at room temperature can be increased to 4,000 or more.

再者,第2晶粒9b之鈣濃度尤其理想為0.5~2.5原子%。若鈣濃度為該範圍,則可使鈣充分固溶於鈦酸鋇中。另外,可使未固溶而殘存於晶界等之鈣之化合物減少,因此介電常數之AC電壓依存性變大,故可實現高介電係數化。再者,第1晶粒9a包括鈣濃度為零者。另外,本發明中之居里溫度係指於測定介電常數之溫度特性之範圍(-60~150℃)中介電常數達到最大之溫度。Further, the calcium concentration of the second crystal grains 9b is particularly preferably 0.5 to 2.5 atom%. If the calcium concentration is in this range, calcium can be sufficiently dissolved in barium titanate. Further, since the compound which is not solid-solved and remains in the grain boundary or the like is reduced, the AC voltage dependence of the dielectric constant is increased, so that a high dielectric constant can be achieved. Further, the first crystal grains 9a include those having a calcium concentration of zero. Further, the Curie temperature in the present invention means a temperature at which the dielectric constant is maximized in the range of the temperature characteristic (-60 to 150 ° C) at which the dielectric constant is measured.

關於晶粒9中之鈣濃度,係使用附設有元素分析設備之穿透式電子顯微鏡,對藉由離子研磨將介電質層5之剖面研磨至可進行觀察之程度為止的研磨面上所存在的晶粒9進行元素分析。Regarding the calcium concentration in the crystal grains 9, a cross-section electron microscope with an elemental analysis device is used to polish the cross section of the dielectric layer 5 by ion milling to the extent that it can be observed. The grain 9 was subjected to elemental analysis.

此時,電子束之光點尺寸係設為5 nm。另外,分析部位係於自晶粒9之晶界附近朝中心繪製之直線中自晶界起大致等間隔地設定4~5點。求出將自各測定點檢測出之Ba、Ti、Ca、V、Mg、RE(稀土元素)及Mn之總量設為100%時之鈣的比例,並求出於各測定點所求出之鈣比例之平均值作為鈣濃度。然後,將所求出之鈣濃度為0.2原子%以下的晶粒作為第1晶粒9a,且將所求出之鈣濃度為0.4原子%以上 的晶粒作為第2晶粒9b。At this time, the spot size of the electron beam was set to 5 nm. Further, the analysis portion is set at a substantially equal interval from the grain boundary in the straight line drawn from the vicinity of the grain boundary of the crystal grain 9 to 4 to 5 points. The ratio of calcium when the total amount of Ba, Ti, Ca, V, Mg, RE (rare earth element) and Mn detected from each measurement point was 100% was determined and determined at each measurement point. The average of the calcium ratios is taken as the calcium concentration. Then, the obtained crystal grain having a calcium concentration of 0.2 atom% or less is used as the first crystal grain 9a, and the obtained calcium concentration is 0.4 atom% or more. The crystal grains serve as the second crystal grains 9b.

測定鈣濃度之晶粒9係以如下方式選定。首先,使用穿透式電子顯微鏡,拍攝對構成積層陶瓷電容器之介電質層5之剖面加以研磨而得的研磨面之照片(倍率:20,000~100,000倍)。然後,於該照片上繪製包圍30個晶粒9之圓,利用圖像處理根據位於該圓內及圓周上之各晶粒9之輪廓求出各粒子之面積,並計算出替換為具有相同面積之圓時之直徑。接著,將所求出之晶粒9之直徑處於利用後述方法求出之平均粒徑之±30%的範圍內者作為晶粒9。The crystal grain 9 of the calcium concentration was selected in the following manner. First, a photograph of a polished surface obtained by polishing a cross section of the dielectric layer 5 constituting the laminated ceramic capacitor (magnification: 20,000 to 100,000 times) was taken using a transmission electron microscope. Then, a circle enclosing 30 crystal grains 9 is drawn on the photograph, and the area of each particle is obtained by image processing according to the contour of each of the crystal grains 9 located in the circle and the circumference, and is calculated to be replaced with the same area. The diameter of the circle. Next, the diameter of the obtained crystal grain 9 is in the range of ±30% of the average particle diameter determined by the method described later.

另外,求出自位於該圓內及圓周上之各晶粒9中選擇並測定之第1晶粒9a及第2晶粒9b各自之總面積,而求出C2/(C1+C2)之值。Further, the total area of each of the first crystal grains 9a and the second crystal grains 9b selected and measured from the respective crystal grains 9 located in the circle and the circumference is obtained, and the value of C2/(C1+C2) is obtained. .

再者,晶粒9之中心為該晶粒9之內接圓之中心,並且,所謂晶粒9之晶界附近係指自該晶粒9之晶界起至5 nm內側為止之區域。而且,晶粒9之內接圓係將藉由穿透式電子顯微鏡映出之圖像取入至電腦中,於其畫面上對晶粒9繪製內接圓,並決定晶粒9之中心。Further, the center of the crystal grain 9 is the center of the inscribed circle of the crystal grain 9, and the vicinity of the grain boundary of the crystal grain 9 means a region from the grain boundary of the crystal grain 9 to the inner side of 5 nm. Moreover, the inscribed circle of the die 9 takes the image reflected by the transmission electron microscope into the computer, draws an inscribed circle on the grain 9 on its screen, and determines the center of the die 9.

圖3係表示構成後述實施例中之樣品No.3之積層陶瓷電容器的介電質陶瓷之X射線繞射圖。構成本發明之積層陶瓷電容器的介電質陶瓷具有如圖3之X射線繞射圖所示之繞射圖案。另外,圖4係表示樣品No.3之積層陶瓷電容器之靜電電容之溫度特性的圖表。本發明之積層陶瓷電容器具 有如圖4所示之靜電電容之溫度特性。Fig. 3 is a view showing an X-ray diffraction pattern of a dielectric ceramic constituting the multilayer ceramic capacitor of the sample No. 3 in the embodiment to be described later. The dielectric ceramic constituting the multilayer ceramic capacitor of the present invention has a diffraction pattern as shown in the X-ray diffraction pattern of Fig. 3. 4 is a graph showing the temperature characteristics of the electrostatic capacitance of the multilayer ceramic capacitor of Sample No. 3. Multilayer ceramic capacitor device of the invention There is a temperature characteristic of the electrostatic capacitance as shown in FIG.

於圖3之X射線繞射圖中,顯示立方晶之鈦酸鋇之(200)面(2 θ=45.3°附近)與顯示正方晶之鈦酸鋇之(002)面(2 θ=45.1°附近)的X射線繞射波峰重疊,而成為寬幅之繞射波峰。而且,顯示立方晶之鈦酸鋇之(200)面的繞射強度(Ic)大於顯示正方晶之鈦酸鋇之(002)面的繞射強度(It)。該結晶構造類似於習知之核-殼構造之X射線繞射圖案,但如圖4所示,構成本發明之積層陶瓷電容器的介電質陶瓷之居里溫度(Tc)為95~105℃,而與居里溫度為125℃之習知之具有核-殼構造的介電質陶瓷之介電特性不同。In the X-ray diffraction diagram of Fig. 3, the (200) plane of the cubic crystal barium titanate (near 2 θ = 45.3 °) and the (002) plane of the barium titanate exhibiting tetragonal (2 θ = 45.1 °) are shown. The nearby X-ray diffraction peaks overlap and become wide diffraction peaks. Further, the diffraction intensity (Ic) of the (200) plane showing the cubic crystal of barium titanate is larger than the diffraction intensity (It) of the (002) plane showing the tetragonal barium titanate. The crystal structure is similar to the X-ray diffraction pattern of the conventional core-shell structure, but as shown in FIG. 4, the dielectric ceramic (Tc) constituting the multilayer ceramic capacitor of the present invention has a Curie temperature (Tc) of 95 to 105 ° C. The dielectric properties of a dielectric ceramic having a core-shell structure with a Curie temperature of 125 ° C are different.

即,使鎂、錳及稀土元素等之添加成分固溶於作為主成分之鈦酸鋇中而得之具有核-殼構造的介電質陶瓷顯示純粹之鈦酸鋇之居里溫度(125℃)附近的居里溫度。相對於此,構成本發明之積層陶瓷電容器之介電質層5的介電質陶瓷如上所述,係於鈦酸鋇中固溶有鈣、釩、鎂、錳以及自釔、鏑、鈥及鉺中選擇之至少1種稀土元素以及鋱。因此,儘管具有於X射線繞射圖中顯示立方晶之鈦酸鋇之(200)面的繞射強度大於顯示正方晶之鈦酸鋇之(002)面的繞射強度之結晶構造,但居里溫度為95~105℃而具有偏向室溫側之特性。That is, a dielectric ceramic having a core-shell structure obtained by solid-solving an additive component such as magnesium, manganese, and a rare earth element in a barium titanate as a main component shows a Curie temperature of pure barium titanate (125 ° C) ) Curie temperature nearby. On the other hand, as described above, the dielectric ceramic constituting the dielectric layer 5 of the multilayer ceramic capacitor of the present invention is solid-dissolved with calcium, vanadium, magnesium, manganese, and ruthenium, osmium, iridium and the like in barium titanate. At least one rare earth element selected from the group and strontium. Therefore, although the diffraction intensity of the (200) plane having the cubic crystal of barium titanate in the X-ray diffraction pattern is larger than the crystal structure of the diffraction intensity of the (002) plane showing the tetragonal barium titanate, The temperature is 95 to 105 ° C and has a characteristic of being biased toward the room temperature side.

一般認為其原因在於,除了釩、鎂、錳及稀土元素等之添加成分以外使少量之鋱固溶,藉此添加成分於介電質陶瓷之內部以特定之狀態而擴散,因此可使居里溫度為95~105 ℃。It is considered that the reason is that a small amount of cerium is solid-dissolved in addition to the added components such as vanadium, magnesium, manganese, and a rare earth element, whereby the additive component is diffused in a specific state inside the dielectric ceramic, so that Curie can be made. Temperature is 95~105 °C.

例如,於構成本發明之積層陶瓷電容器之介電質陶瓷中,第1晶粒9a及第2晶粒9b係各自表層部之錳濃度減去深度為10 nm之位置的錳濃度而得之濃度差為0.3原子%以下,並且表層部之稀土元素濃度減去深度為10 nm之位置的稀土元素濃度而得之濃度差為0.7原子%以上。具體而言,如圖5(a)~(c)所示。For example, in the dielectric ceramic constituting the multilayer ceramic capacitor of the present invention, the first crystal grains 9a and the second crystal grains 9b are obtained by subtracting the manganese concentration at a depth of 10 nm from the surface layer portion. The difference is 0.3 atom% or less, and the concentration of the rare earth element in the surface layer portion minus the concentration of the rare earth element at a position having a depth of 10 nm is 0.7 atom% or more. Specifically, it is as shown in FIGS. 5(a) to (c).

圖5(a)係表示構成後述實施例中之樣品No.3之積層陶瓷電容器的介電質陶瓷之晶粒中所含之稀土元素及錳之濃度變化的圖表。該介電質陶瓷為本發明之範圍內者。Fig. 5 (a) is a graph showing changes in concentration of rare earth elements and manganese contained in crystal grains of a dielectric ceramic constituting the multilayer ceramic capacitor of sample No. 3 in the example described later. The dielectric ceramic is within the scope of the invention.

圖5(b)係表示構成後述實施例中之樣品No.1之積層陶瓷電容器的介電質陶瓷之晶粒中所含之稀土元素及錳之濃度變化的圖表。該介電質陶瓷係使鎂、錳及稀土元素該等添加成分固溶於作為主成分之鈦酸鋇中而得者,具有核-殼構造,居里溫度為125℃。Fig. 5 (b) is a graph showing changes in concentration of rare earth elements and manganese contained in crystal grains of a dielectric ceramic constituting the multilayer ceramic capacitor of sample No. 1 in the example described later. This dielectric ceramic has a core-shell structure in which a solid component of magnesium, manganese, and a rare earth element is dissolved in barium titanate as a main component, and has a Curie temperature of 125 °C.

圖5(c)係表示構成後述實施例中之樣品No.6之積層陶瓷電容器的介電質陶瓷之晶粒中所含之稀土元素及錳之濃度變化的圖表。該介電質陶瓷係使鎂、錳及稀土元素該等添加成分固溶於作為主成分之鈦酸鋇中,並且過量添加鋱而得者。再者,圖5(a)~(c)中,稀土元素為釔(Y)。Fig. 5 (c) is a graph showing changes in concentration of rare earth elements and manganese contained in crystal grains of a dielectric ceramic constituting the multilayer ceramic capacitor of sample No. 6 in the example described later. This dielectric ceramic is obtained by dissolving such an additive component of magnesium, manganese, and a rare earth element in barium titanate as a main component, and adding hydrazine in excess. Further, in FIGS. 5(a) to (c), the rare earth element is yttrium (Y).

圖5(a)中,於晶粒9之表面附近,稀土元素(Y)顯示較大之濃度變化,相對於此,錳(Mn)於表面附近之濃度變化較小。In Fig. 5(a), the rare earth element (Y) shows a large concentration change in the vicinity of the surface of the crystal grain 9, whereas the concentration change of manganese (Mn) in the vicinity of the surface is small.

另一方面,圖5(b)中,稀土元素(Y)及錳(Mn)兩種成分於晶粒9之表面附近均顯示較大之濃度變化。圖5(c)中,稀土元素(Y)及錳(Mn)兩種成分於晶粒9之表面附近的濃度變化均較小。On the other hand, in FIG. 5(b), both the rare earth element (Y) and the manganese (Mn) component show a large concentration change in the vicinity of the surface of the crystal grain 9. In Fig. 5(c), the concentration changes of the rare earth element (Y) and the manganese (Mn) component in the vicinity of the surface of the crystal grain 9 are small.

如上所述,本發明之積層陶瓷電容器係構成介電質陶瓷之晶粒9之表面附近之稀土元素(Y)的濃度變化較大,相對於此錳(Mn)之濃度變化較小,於上述樣品No.1與樣品No.6之間具有中間構造。因此,即便結晶構造近似於核-殼構造,居里溫度亦顯示95~105℃。As described above, the multilayer ceramic capacitor of the present invention has a large change in the concentration of the rare earth element (Y) in the vicinity of the surface of the crystal grain 9 constituting the dielectric ceramic, and the change in the concentration of manganese (Mn) is small. There is an intermediate structure between sample No. 1 and sample No. 6. Therefore, even if the crystal structure is similar to the core-shell structure, the Curie temperature is also 95 to 105 °C.

因此,本發明之積層陶瓷電容器中,擴散之元素補償了晶粒中之氧缺陷,藉此介電質陶瓷之絕緣性提昇,而可提高於高溫負載試驗中之壽命。Therefore, in the multilayer ceramic capacitor of the present invention, the element of diffusion compensates for oxygen defects in the crystal grains, whereby the dielectric properties of the dielectric ceramic are improved, and the life in the high-temperature load test can be improved.

即,於在晶粒9中錳及稀土元素之固溶量較少之情況下,包含較多之氧空位等的缺陷之核部所占之比例變多。因此,一般認為於施加直流電壓之情況下,於構成介電質陶瓷之晶粒9之內部,氧空位等容易成為搬運電荷之載體,從而介電質陶瓷之絕緣性下降。於構成本發明之積層陶瓷電容器中之介電質層5的介電質陶瓷中,加入釩與鋱,而使作為包括上述釩與鋱之添加成分的錳及稀土元素之固溶狀態不同,從而使居里溫度處於95~105℃之範圍。因此,一般認為可使晶粒9中之氧空位等之載體密度減少,含有較多之稀土元素及錳,而使晶粒9之內部之氧空位較少,故可獲得較高之絕緣 性。In other words, when the amount of solid solution of manganese and rare earth elements in the crystal grains 9 is small, the proportion of the core portion including defects such as a large number of oxygen vacancies increases. Therefore, it is considered that, in the case where a direct current voltage is applied, oxygen vacancies or the like easily become a carrier for carrying electric charges inside the crystal grains 9 constituting the dielectric ceramic, and the dielectric properties of the dielectric ceramic are lowered. Vanadium and yttrium are added to the dielectric ceramic constituting the dielectric layer 5 in the multilayer ceramic capacitor of the present invention, and the solid solution state of the manganese and the rare earth element including the additive component of the vanadium and niobium is different. The Curie temperature is in the range of 95 to 105 °C. Therefore, it is generally considered that the carrier density of the oxygen vacancies or the like in the crystal grains 9 can be reduced, and the rare earth element and manganese are contained more, and the oxygen vacancies inside the crystal grains 9 are less, so that a higher insulation can be obtained. Sex.

晶粒9中所含之稀土元素及錳之濃度的測定係使用附設有元素分析儀(EDS)之穿透式電子顯微鏡來進行。對於分析之樣品,藉由離子研磨於積層方向上將積層陶瓷電容器研磨至可進行觀察之程度為止,於其經研磨之介電質層5之表面上,分別選取利用上述鈣濃度之測定所判定的第1晶粒9a及第2晶粒9b。The measurement of the concentration of the rare earth element and manganese contained in the crystal grains 9 was carried out using a transmission electron microscope with an elemental analyzer (EDS). For the sample to be analyzed, the laminated ceramic capacitor was polished to a level at which observation was possible by ion milling in the lamination direction, and the surface of the ground dielectric layer 5 was selected and determined by the measurement of the calcium concentration. The first crystal grain 9a and the second crystal grain 9b.

對於選取之各晶粒9a、9b,係分別利用圖像處理根據其輪廓而求出各粒子之面積,計算出替換為具有相同面積之圓時之直徑,將各晶粒9a、9b設定為處於藉由後述測定方法求出之平均粒徑之±30%之範圍的晶粒,而分別選取10個處於該範圍之第1晶粒9a及第2晶粒9b。For each of the selected crystal grains 9a and 9b, the area of each particle is obtained from the contour by image processing, and the diameter when replacing the circle having the same area is calculated, and the respective crystal grains 9a and 9b are set to be at The first crystal grains 9a and the second crystal grains 9b in the range are selected from the crystal grains in the range of ±30% of the average particle diameter by the measurement method described later.

進行元素分析時之電子束之光點尺寸係設為1~3 nm。另外,分析部位至少係設為晶粒9之表層部以及距離表層部之深度為5 nm、10 nm及20 nm之位置。再者,本發明中,所謂晶粒9之表層部,係指距離晶粒9之剖面之晶界為3 nm以內的區域。The spot size of the electron beam when performing elemental analysis is set to 1 to 3 nm. Further, the analysis portion is at least a surface portion of the crystal grain 9 and a depth of 5 nm, 10 nm, and 20 nm from the surface portion. Further, in the present invention, the surface layer portion of the crystal grain 9 means a region within 3 nm from the grain boundary of the cross section of the crystal grain 9.

然後,對於第1晶粒9a及第2晶粒9b,分別求出各晶粒9a、9b之表層部的稀土元素及錳之濃度,並且求出距離表層部之深度為10 nm之位置的稀土元素及錳之濃度。圖5(a)~(c)中,箭頭所表示之位置為距離表層部之深度為10 nm之位置。Then, the concentration of the rare earth element and the manganese in the surface layer portion of each of the crystal grains 9a and 9b is obtained for each of the first crystal grains 9a and the second crystal grains 9b, and a rare earth having a depth of 10 nm from the surface layer portion is obtained. The concentration of elements and manganese. In Figs. 5(a) to 5(c), the position indicated by the arrow is a position at a depth of 10 nm from the surface layer portion.

接著,根據所求出之各晶粒9a、9b之表層部及距離表層部之深度為10 nm之位置的稀土元素及錳之各濃度,而分別求出各晶粒9a、9b之表層部的錳濃度減去深度為10 nm之位置的錳濃度而得之濃度差、以及各晶粒9a、9b之表層部的稀土元素濃度減去深度為10 nm之位置的稀土元素濃度而得之濃度差。具體而言,各對10個晶粒進行該作業,對根據各晶粒9a、9b求出之總計20個值計算晶粒9之平均值而使用。Next, the surface layer portions of the respective crystal grains 9a and 9b are obtained from the respective concentrations of the rare earth element and the manganese at a position where the depth of the surface layer portion and the surface layer portion of the respective crystal grains 9a and 9b are 10 nm. The difference in concentration between the concentration of manganese minus the concentration of manganese at a depth of 10 nm, and the concentration of rare earth elements in the surface layer of each of the grains 9a and 9b minus the concentration of rare earth elements at a position of 10 nm in depth . Specifically, this operation is performed for each of 10 pairs of crystal grains, and the average value of the crystal grains 9 is calculated for a total of 20 values obtained from the respective crystal grains 9a and 9b.

再者,雖未圖示,但鎂、釩及鋱與錳相同,各自之表層部之濃度減去各自之深度為10 nm之位置的濃度而得之濃度差為0.3原子%以下。Further, although not shown, magnesium, vanadium and niobium are the same as manganese, and the concentration of each surface layer portion is reduced by a concentration at a position at a depth of 10 nm, and the difference in concentration is 0.3 atom% or less.

於構成本發明之積層陶瓷電容器中之介電質層5的介電質陶瓷中,就維持高介電係數化並且減小介電損失之方面而言,包括第1晶粒9a及第2晶粒9b之晶粒9之平均粒徑只要為0.1 μm以上即可,若要減小靜電電容之不均一,則設為0.3 μm以下之範圍即可,較佳為0.14~0.28 μm即可。In the dielectric ceramic constituting the dielectric layer 5 in the multilayer ceramic capacitor of the present invention, the first crystal grain 9a and the second crystal are included in terms of maintaining high dielectric constant and reducing dielectric loss. The average particle diameter of the crystal grains 9 of the particles 9b may be 0.1 μm or more, and if the capacitance is not uniform, it may be 0.3 μm or less, preferably 0.14 to 0.28 μm.

若晶粒9之平均粒徑為0.14~0.28 μm,則存在如下優點:可使介電常數為3500以上,使介電損失為12.5%以下,介電常數之溫度特性滿足X6S,將AC電壓設為1 V時之介電常數為將AC電壓設為0.01 V時之介電常數的1.9倍以下,並且滿足高溫負載試驗中之可靠性(於105℃、額定電壓之1.5倍、1000小時以上之條件下無不良)。If the average grain size of the crystal grains 9 is 0.14 to 0.28 μm, the dielectric constant is 3500 or more, the dielectric loss is 12.5% or less, the dielectric constant temperature characteristic satisfies X6S, and the AC voltage is set. The dielectric constant at 1 V is 1.9 times or less of the dielectric constant when the AC voltage is set to 0.01 V, and satisfies the reliability in the high-temperature load test (at 105 ° C, 1.5 times the rated voltage, and 1000 hours or more). No defects under the conditions).

對於晶粒9之平均粒徑,首先,對由煅燒後之電容器本體1所構成之樣品之斷裂面進行研磨,然後使用掃描式電子顯微鏡拍攝內部組織之照片(倍率:20,000~100,000倍)。For the average particle diameter of the crystal grains 9, first, the fracture surface of the sample composed of the calcined capacitor body 1 was ground, and then a photograph of the internal structure (magnification: 20,000 to 100,000 times) was taken using a scanning electron microscope.

然後,於該照片上繪製包圍20~30個晶粒9之圓,選擇圓內及圓周上之晶粒9。接著,對各晶粒9之輪廓進行圖像處理,求出各粒子之面積,計算出替換為具有相同面積之圓時之直徑,並根據其平均值求出上述平均粒徑。Then, a circle enclosing 20 to 30 crystal grains 9 is drawn on the photograph, and the crystal grains 9 in the circle and on the circumference are selected. Next, the contour of each of the crystal grains 9 was subjected to image processing, and the area of each particle was determined, and the diameter when the circle having the same area was replaced was calculated, and the average particle diameter was obtained from the average value.

另一方面,為了獲得可使高溫負載試驗中之壽命特性進一步提高之積層陶瓷電容器,作為介電質陶瓷之其他較佳組成,較佳為相對於構成鈦酸鋇之鈦100莫耳而含有以V2 O5 換算計為0.05~0.1莫耳之釩,以MgO換算計為0.2~0.8莫耳之鎂,以MnO換算計為0.2~0.3莫耳之錳,以RE2 O3 換算計為0.4~0.6莫耳之自釔、鏑、鈥及鉺中選擇之至少1種稀土元素,以及以Tb4 O7 換算計為0.05~0.1莫耳之鋱,且較佳為第1晶粒及第2晶粒之平均粒徑為0.14~0.19 μm。On the other hand, in order to obtain a multilayer ceramic capacitor which can further improve the life characteristics in the high-temperature load test, as another preferable composition of the dielectric ceramic, it is preferable to contain 100 mol of the titanium constituting the barium titanate. The V 2 O 5 conversion is 0.05 to 0.1 m of vanadium, and is 0.2 to 0.8 m of magnesium in terms of MgO, 0.2 to 0.3 mol of manganese in terms of MnO, and 0.4 in terms of RE 2 O 3 . ~0.6 moles of at least one rare earth element selected from lanthanum, cerium, lanthanum and cerium, and 0.05 to 0.1 moles in terms of Tb 4 O 7 , and preferably first grain and second The average grain size of the crystal grains is from 0.14 to 0.19 μm.

具有此種組成及晶粒之平均粒徑之介電質陶瓷可獲得即便於將高溫負載試驗之溫度提高至125℃之條件下亦於1000小時以上無不良之積層陶瓷電容器。A dielectric ceramic having such a composition and an average particle diameter of the crystal grains can obtain a laminated ceramic capacitor which is not defective even if the temperature of the high-temperature load test is raised to 125 ° C for 1,000 hours or more.

再者,本發明之介電質陶瓷中,只要為可維持所需介電質特性之範圍,則亦可含有玻璃成分作為用以提高燒結性之助劑(燒結助劑)。Further, in the dielectric ceramic of the present invention, a glass component may be contained as an auxiliary agent (sintering aid) for improving the sinterability as long as the range of the desired dielectric properties can be maintained.

然後,對製造本發明之積層陶瓷電容器之方法加以說明。首先,作為原料粉末,準備純度為99%以上之鈦酸鋇粉末(以下稱為BT粉末)以及鈦酸鋇中固溶有鈣之粉末(以下稱為BCT粉末)。另外,準備V2 O5 粉末與MgO粉末,進而準備自Y2 O3 粉末、Dy2 O3 粉末、Ho2 O3 粉末及Er2 O3 粉末中選擇之至少1種稀土元素之氧化物粉末以及Tb4 O7 粉末及MnCO3 粉末。Next, a method of manufacturing the multilayer ceramic capacitor of the present invention will be described. First, as the raw material powder, barium titanate powder (hereinafter referred to as BT powder) having a purity of 99% or more and a powder in which calcium is dissolved in barium titanate (hereinafter referred to as BCT powder) are prepared. Further, the V 2 O 5 powder and the MgO powder are prepared, and further, an oxide powder of at least one rare earth element selected from the group consisting of Y 2 O 3 powder, Dy 2 O 3 powder, Ho 2 O 3 powder, and Er 2 O 3 powder is prepared. And Tb 4 O 7 powder and MnCO 3 powder.

BCT粉末係將A位置之一部分經鈣(Ca)置換之鈦酸鋇作為主成分之固溶體,係以(Ba1-x Cax )TiO3 所表示。該化合物中,A位置中之Ca之置換量較佳為X=0.01~0.2。若Ca之置換量為該範圍內,則藉由與第1晶粒9a之共存構造,可形成晶粒成長受到抑制之結晶組織。藉此,於將所得之介電質陶瓷用作積層陶瓷電容器之情況下,可於使用溫度範圍中獲得優異之靜電電容之溫度特性。再者,第2晶粒9b中所含之Ca係以分散於第2晶粒9b中之狀態而固溶。The BCT powder is a solid solution in which a part of the A site is calcium (Ca)-substituted barium titanate as a main component, and is represented by (Ba 1-x Ca x )TiO 3 . In the compound, the substitution amount of Ca in the A site is preferably X = 0.01 to 0.2. When the substitution amount of Ca is within this range, a crystal structure in which grain growth is suppressed can be formed by the coexistence structure with the first crystal grains 9a. Thereby, in the case where the obtained dielectric ceramic is used as a laminated ceramic capacitor, excellent temperature characteristics of the electrostatic capacitance can be obtained in the use temperature range. Further, Ca contained in the second crystal grains 9b is solid-dissolved in a state of being dispersed in the second crystal grains 9b.

另外,所使用之BT粉末及BCT粉末之比表面積較佳為2~6 m2 /g。若BT粉末及BCT粉末之比表面積為2~6 m2 /g,則容易使第1晶粒9a及第2晶粒9b維持近似於核-殼構造之結晶構造,並且容易使添加成分固溶於該等晶粒中而使居里溫度偏向低溫側。另外,可實現介電常數之提高,並且可提高介電質陶瓷之絕緣性,藉此可提高於高溫負載試驗中之可靠性。Further, the specific surface area of the BT powder and the BCT powder to be used is preferably 2 to 6 m 2 /g. When the specific surface area of the BT powder and the BCT powder is 2 to 6 m 2 /g, the first crystal grains 9a and the second crystal grains 9b are easily maintained in a crystal structure similar to the core-shell structure, and the added components are easily dissolved. The Curie temperature is biased toward the low temperature side in the crystal grains. In addition, an increase in the dielectric constant can be achieved, and the insulation of the dielectric ceramic can be improved, whereby the reliability in the high-temperature load test can be improved.

另外,關於作為添加劑之自Y2 O3 粉末、Dy2 O3 粉末、Ho2 O3 粉末及Er2 O3 粉末中選擇之至少1種稀土元素之氧化物粉末、Tb4 O7 粉末、V2 O5 粉末、MgO粉末以及MnCO3 粉末,較佳為使用粒徑(或比表面積)與介電質粉末相同者。Further, as an additive, an oxide powder of at least one rare earth element selected from Y 2 O 3 powder, Dy 2 O 3 powder, Ho 2 O 3 powder, and Er 2 O 3 powder, Tb 4 O 7 powder, V The 2 O 5 powder, the MgO powder, and the MnCO 3 powder are preferably the same in particle size (or specific surface area) as the dielectric powder.

然後,相對於BT粉末及BCT粉末之總量100莫耳,以0.02~0.2莫耳之V2 O5 粉末、0.2~0.8莫耳之MgO粉末、0.3~0.8莫耳之稀土元素之氧化物粉末、0.1~0.5莫耳之MnCO3 粉末、以及0.02~0.2莫耳之Tb4 O7 粉末之比例來調配該等原料粉末,進而,視需要以可維持所需介電特性之範圍添加作為燒結助劑之玻璃粉末,而獲得原材料粉末。當將作為主要原料粉末之BT粉末及BCT粉末之總量設為100質量份時,玻璃粉末之添加量較佳為0.5~2質量份。Then, relative to the total amount of BT powder and BCT powder of 100 moles, 0.02 to 0.2 moles of V 2 O 5 powder, 0.2 to 0.8 moles of MgO powder, 0.3 to 0.8 moles of rare earth element oxide powder And 0.1 to 0.5 mol of MnCO 3 powder and 0.02 to 0.2 mol of Tb 4 O 7 powder to prepare the raw material powders, and further, as needed, to be added as a sintering aid in a range capable of maintaining desired dielectric properties. A glass powder of the agent to obtain a raw material powder. When the total amount of the BT powder and the BCT powder as the main raw material powder is 100 parts by mass, the amount of the glass powder added is preferably 0.5 to 2 parts by mass.

接著,於上述原材料粉末中加入專用之有機媒劑來製備陶瓷漿料,使用刮刀成形法或狹縫擠壓式塗佈法等之片材成形法形成陶瓷生片。於該情況下,就維持用以實現介電質層5之高電容化的薄層化、高絕緣性之方面而言,陶瓷生片之厚度較佳為0.5~3 μm。Next, a ceramic slurry is prepared by adding a dedicated organic vehicle to the raw material powder, and a ceramic green sheet is formed by a sheet forming method such as a doctor blade method or a slit extrusion coating method. In this case, the thickness of the ceramic green sheet is preferably 0.5 to 3 μm in terms of thinning and high insulation for achieving high capacitance of the dielectric layer 5.

之後,於所得陶瓷生片之主面上,印刷形成矩形狀之內部電極圖案。成為內部電極圖案之導電膏較佳為Ni、Cu或者其等之合金粉末。Thereafter, a rectangular internal electrode pattern was printed on the main surface of the obtained ceramic green sheet. The conductive paste to be the internal electrode pattern is preferably an alloy powder of Ni, Cu or the like.

然後,將所需片數之形成有內部電極圖案之陶瓷生片重疊,以上下層為相同片數之方式於其上下重疊數片未形成內 部電極圖案之陶瓷生片,而形成片材積層體。於該情況下,片材積層體中之內部電極圖案係於長度方向上分別錯開半個圖案。Then, the desired number of ceramic green sheets in which the internal electrode patterns are formed are overlapped, and the upper and lower layers are in the same number of sheets. The ceramic green sheets of the electrode patterns form a sheet laminate. In this case, the internal electrode patterns in the sheet laminate are shifted by half a pattern in the longitudinal direction.

接著,將所得片材積層體切斷為格子狀,以內部電極圖案之端部露出之方式形成電容器本體成形體。藉由此種積層方法,能夠以內部電極圖案於切斷後之電容器本體成形體之端面交替露出之方式形成。Next, the obtained sheet laminated body was cut into a lattice shape, and the capacitor main body molded body was formed so that the end part of the internal electrode pattern was exposed. According to such a lamination method, the internal electrode pattern can be formed so that the end faces of the capacitor body molded body after the cutting are alternately exposed.

然後,將所得之電容器本體成形體脫脂後,進行煅燒。就控制添加劑於BT粉末及BCT粉末中之固溶以及晶粒之粒子成長的理由而言,煅燒溫度較佳為1100~1200℃。Then, the obtained capacitor body formed body was degreased and then calcined. The calcination temperature is preferably from 1100 to 1200 ° C for the purpose of controlling the solid solution of the additive in the BT powder and the BCT powder and the growth of the crystal grains of the crystal grains.

為了獲得本發明之介電質陶瓷,使用比表面積為2~6 m2 /g之BT粉末及BCT粉末,於其等中如上述般添加既定量之鎂、錳、釩及鋱之各氧化物以及自釔、鏑、鈥及鉺中選擇之至少1種上述稀土元素之各種氧化物粉末作為添加劑,於上述溫度進行煅燒。藉此,使將BT粉末及BCT粉末作為主原料而獲得之晶粒中含有各種添加劑,該晶粒所顯示之結晶構造成為近似於核-殼構造之構造,並且居里溫度達到低於習知之顯示核-殼構造之介電質陶瓷之居里溫度的範圍。於煅燒後,藉由以使居里溫度達到低於習知之顯示核-殼構造之介電質陶瓷之居里溫度之範圍的方式進行煅燒,第1晶粒9a及第2晶粒9b中添加劑之固溶提昇,其結果可獲得絕緣性較高且於高溫負載試驗中之壽命佳之介電質陶 瓷。再者,本發明中,為了使構成介電質陶瓷之晶粒9之平均粒徑為0.19 μm以下,較理想為選擇比表面積大於5 m2 /g之粉末。In order to obtain the dielectric ceramic of the present invention, BT powder and BCT powder having a specific surface area of 2 to 6 m 2 /g are used, and in each case, a predetermined amount of each of oxides of magnesium, manganese, vanadium and niobium is added as described above. And each of the oxide powders of at least one of the above-mentioned rare earth elements selected from lanthanum, cerium, lanthanum and cerium is used as an additive and calcined at the above temperature. Thereby, the crystal grains obtained by using the BT powder and the BCT powder as main raw materials contain various additives, and the crystal structure exhibited by the crystal grains is a structure similar to the core-shell structure, and the Curie temperature is lower than the conventional one. The range of the Curie temperature of the dielectric ceramic showing the core-shell structure. After calcination, the first crystal grains 9a and the second crystal grains 9b are added by calcining so that the Curie temperature is lower than the range of the Curie temperature of the dielectric ceramics of the conventional display core-shell structure. The solid solution is improved, and as a result, a dielectric ceramic having high insulation and good life in a high-temperature load test can be obtained. Further, in the present invention, in order to make the average particle diameter of the crystal grains 9 constituting the dielectric ceramic to be 0.19 μm or less, it is preferable to select a powder having a specific surface area of more than 5 m 2 /g.

另外,於煅燒後,再次於弱還原環境下進行熱處理。進行該熱處理係為了將還原環境中之煅燒時被還原之介電質陶瓷再氧化,使煅燒時被還原而下降之絕緣電阻恢復。就抑制第1晶粒9a及第2晶粒9b之進一步之晶粒成長並且提高再氧化量的理由而言,該熱處理之溫度較佳為900~1100℃。以上述方式可製作第1晶粒9a及第2晶粒9b高絕緣性化、且顯示95~105℃之居里溫度之積層陶瓷電容器。Further, after calcination, heat treatment was again performed in a weakly reducing atmosphere. This heat treatment is carried out in order to reoxidize the reduced dielectric ceramic during calcination in a reducing environment, and to restore the insulation resistance which is reduced by reduction during calcination. The temperature of the heat treatment is preferably 900 to 1100 ° C for the purpose of suppressing further grain growth of the first crystal grains 9 a and the second crystal grains 9 b and increasing the amount of reoxidation. In the above manner, a multilayer ceramic capacitor in which the first crystal grains 9a and the second crystal grains 9b are highly insulating and exhibits a Curie temperature of 95 to 105 ° C can be produced.

然後,於進行上述熱處理而獲得之電容器本體1之相對向的端部上,塗佈外部電極膏並進行燒製,而形成外部電極3。另外,亦可於該外部電極3之表面上形成鍍膜以提高安裝性。以上述方式可獲得本發明之積層陶瓷電容器。Then, an external electrode paste is applied to the opposite end portions of the capacitor body 1 obtained by the above heat treatment, and fired to form the external electrode 3. Further, a plating film may be formed on the surface of the external electrode 3 to improve mountability. The multilayer ceramic capacitor of the present invention can be obtained in the above manner.

以下,舉出實施例進一步對本發明加以詳細說明,但本發明並不限定於以下實施例。Hereinafter, the present invention will be further described by way of examples, but the present invention is not limited to the following examples.

[實施例][Examples] <積層陶瓷電容器之製作><Production of laminated ceramic capacitors>

首先,作為原料粉末,準備BT粉末、BCT粉末(組成為(Ba1-x Cax )TiO3 ,X=0.05)、MgO粉末、Y2 O3 粉末、Dy2 O3 粉末、Ho2 O3 粉末、Er2 O3 粉末、Tb4 O7 粉末、MnCO3 粉末以及V2 O5 粉末。First, as a raw material powder, BT powder, BCT powder (composition of (Ba 1-x Ca x )TiO 3 , X = 0.05), MgO powder, Y 2 O 3 powder, Dy 2 O 3 powder, Ho 2 O 3 were prepared. Powder, Er 2 O 3 powder, Tb 4 O 7 powder, MnCO 3 powder, and V 2 O 5 powder.

然後,以表1~3所示之比例將該等各種粉末混合。表1~3中,對BT粉末及BCT粉末示出兩種粉末之調配比例。另外,MgO粉末、Y2 O3 粉末、Dy2 O3 粉末、Ho2 O3 粉末、Er2 O3 粉末、Tb4 O7 粉末、MnCO3 粉末以及V2 O5 粉末之比例係將BT粉末與BCT粉末之總量設為100莫耳時之比例。Then, the various powders were mixed at a ratio shown in Tables 1 to 3. In Tables 1 to 3, the blending ratios of the two powders are shown for the BT powder and the BCT powder. Further, the ratio of MgO powder, Y 2 O 3 powder, Dy 2 O 3 powder, Ho 2 O 3 powder, Er 2 O 3 powder, Tb 4 O 7 powder, MnCO 3 powder, and V 2 O 5 powder is BT powder. The ratio with the total amount of BCT powder is set to 100 mol.

該等原料粉末之純度均為99.9%。BT粉末及BCT粉末係於樣品No.1~80中使用比表面積為4 m2 /g者,於樣品No.81~110中使用比表面積為6 m2 /g者。MgO粉末、Y2 O3 粉末、Dy2 O3 粉末、Ho2 O3 粉末、Er2 O3 粉末、Tb4 O7 粉末、MnCO3 粉末以及V2 O5 粉末係使用平均粒徑為0.1 μm者。燒結助劑係使用SiO2 =55、BaO=20、CaO=15、Li2 O=10(莫耳%)組成之玻璃粉末。玻璃粉末之添加量係相對於BT粉末與BCT粉末之總量100質量份而設為1質量份。The purity of the raw material powders was 99.9%. The BT powder and the BCT powder were used in Sample Nos. 1 to 80 in which the specific surface area was 4 m 2 /g, and in Sample Nos. 81 to 110, the specific surface area was 6 m 2 /g. MgO powder, Y 2 O 3 powder, Dy 2 O 3 powder, Ho 2 O 3 powder, Er 2 O 3 powder, Tb 4 O 7 powder, MnCO 3 powder, and V 2 O 5 powder have an average particle diameter of 0.1 μm. By. As the sintering aid, a glass powder having a composition of SiO 2 = 55, BaO = 20, CaO = 15, and Li 2 O = 10 (mole %) was used. The amount of the glass powder added is 1 part by mass based on 100 parts by mass of the total of the BT powder and the BCT powder.

接著,使用直徑為5 mm之氧化鋯球,添加作為溶劑之由甲苯與乙醇所構成之混合溶劑,對該等原料粉末進行濕式混合。Next, a mixed solvent of toluene and ethanol as a solvent was added using a zirconia ball having a diameter of 5 mm, and the raw material powders were wet-mixed.

然後,將經濕式混合之粉末與聚乙烯丁醛樹脂一併投入至甲苯及乙醇之混合溶劑中,使用直徑為5 mm之氧化鋯球進行濕式混合來製備陶瓷漿料。使用該陶瓷漿料,藉由刮刀成形法製作厚度為1.5 μm及2.5 μm之陶瓷生片。Then, the wet-mixed powder was placed together with a polyvinyl butyral resin in a mixed solvent of toluene and ethanol, and wet-mixed using a zirconia ball having a diameter of 5 mm to prepare a ceramic slurry. Using this ceramic slurry, ceramic green sheets having a thickness of 1.5 μm and 2.5 μm were produced by doctor blade forming.

接著,於厚度為1.5 μm及2.5 μm之陶瓷生片之上表面上,形成數個將Ni作為主成分之矩形狀之內部電極圖案。 用以形成內部電極圖案之導電膏係使用相對於平均粒徑為0.3 μm之Ni粉末100質量份而添加有15質量份之BT粉末者。Next, on the upper surface of the ceramic green sheets having thicknesses of 1.5 μm and 2.5 μm, a plurality of rectangular internal electrode patterns having Ni as a main component were formed. The conductive paste for forming the internal electrode pattern was used by adding 15 parts by mass of BT powder to 100 parts by mass of Ni powder having an average particle diameter of 0.3 μm.

然後,積層200片之印刷有內部電極圖案之陶瓷生片,於其上下表面上分別積層20片未印刷內部電極圖案之陶瓷生片,使用壓製機,於溫度為60℃、壓力為107 Pa、時間為10分鐘之條件下使其等密接,而製作出使用了厚度為1.5 μm之陶瓷生片之片材積層體、以及使用了厚度為2.5 μm之陶瓷生片之片材積層體。之後,將各片材積層體切斷成既定尺寸,而形成電容器本體成形體。Then, 200 pieces of ceramic green sheets printed with internal electrode patterns were laminated, and 20 pieces of ceramic green sheets having unprinted internal electrode patterns were laminated on the upper and lower surfaces thereof, using a press at a temperature of 60 ° C and a pressure of 10 7 Pa. After the time was 10 minutes, the sheets were laminated, and a sheet laminate using a ceramic green sheet having a thickness of 1.5 μm and a sheet laminate using a ceramic green sheet having a thickness of 2.5 μm were produced. Thereafter, each of the sheet laminates is cut into a predetermined size to form a capacitor body molded body.

接著,於大氣中對該電容器本體成形體進行脫黏合劑處理後,於氫氣-氮氣中於1120~1135℃煅燒2小時而製作電容器本體。另外,所製作之電容器本體係繼續於氮環境中於1000℃用4小時進行再氧化處理。該電容器本體之大小為0.95×0.48×0.48 mm3 ,介電質層之厚度為1 μm或2 μm,1層內部電極層之有效面積為0.3 mm2 。再者,所謂有效面積,係指以分別露出於電容器本體之不同端面上之方式於積層方向上交替形成之內部電極層彼此重疊之部分的面積。Next, the capacitor body molded body was subjected to a debonding treatment in the air, and then calcined at 1,120 to 1,135 ° C for 2 hours in a hydrogen gas to nitrogen gas to prepare a capacitor body. Further, the produced capacitor system was further subjected to reoxidation treatment at 1000 ° C for 4 hours in a nitrogen atmosphere. The size of the capacitor body is 0.95 x 0.48 x 0.48 mm 3 , the thickness of the dielectric layer is 1 μm or 2 μm, and the effective area of the inner electrode layer of one layer is 0.3 mm 2 . In addition, the effective area means an area of a portion where the internal electrode layers alternately formed in the lamination direction so as to be exposed on different end faces of the capacitor body, respectively.

之後,對經煅燒之電容器本體進行滾筒研磨後,於電容器本體之兩端部上塗佈含有Cu粉末及玻璃之外部電極膏,於850℃進行燒製而形成外部電極。其後,使用電解滾筒機,於該外部電極之表面上依序進行鍍Ni及鍍錫(Sn),而製作 積層陶瓷電容器(表1~3中之樣品No.1~110)。Thereafter, the calcined capacitor body was subjected to barrel polishing, and then an external electrode paste containing Cu powder and glass was applied to both end portions of the capacitor body, and fired at 850 ° C to form an external electrode. Thereafter, Ni plating and tin plating (Sn) are sequentially performed on the surface of the external electrode using an electrolytic roller machine. Laminated ceramic capacitors (sample No. 1 to 110 in Tables 1 to 3).

<評價><evaluation>

然後,對所得之積層陶瓷電容器進行以下評價。Then, the obtained multilayer ceramic capacitor was subjected to the following evaluation.

(介電常數及介電損失)(dielectric constant and dielectric loss)

對於介電常數及介電損失,係於溫度為25℃、頻率為1.0 kHz、將測定電壓設為0.01 Vrms或1 Vrms之條件下測定靜電電容,並根據介電質層之厚度及內部電極層之有效面積求出。該介電常數及介電損失之評價係將樣品數設為20個並根據其平均值而求出。另外,於介電常數之評價中,求出標準偏差σ,並根據上述平均值x求出變異係數(σ/x)。For the dielectric constant and dielectric loss, the electrostatic capacitance is measured at a temperature of 25 ° C and a frequency of 1.0 kHz, and the measurement voltage is set to 0.01 Vrms or 1 Vrms, and the thickness of the dielectric layer and the internal electrode layer are determined. The effective area is determined. The evaluation of the dielectric constant and the dielectric loss was carried out by setting the number of samples to 20 and calculating the average value. Further, in the evaluation of the dielectric constant, the standard deviation σ is obtained, and the coefficient of variation (σ/x) is obtained from the average value x.

(介電常數之溫度特性)(temperature characteristic of dielectric constant)

介電常數之溫度特性係於溫度為-55~150℃之範圍中測定靜電電容。將介電常數之溫度特性滿足X6S(於-55~105℃之範圍中,以25℃為基準時為±22%以內)之情況評價為○,將不滿足之情況評價為×。該介電常數之溫度特性之評價係將樣品數設為10個並根據其平均值而求出。The temperature characteristic of the dielectric constant is measured by measuring the electrostatic capacitance in the range of -55 to 150 °C. When the temperature characteristic of the dielectric constant satisfies X6S (in the range of -55 to 105 ° C and within ±22% on the basis of 25 ° C), it is evaluated as ○, and the case where it is not satisfied is evaluated as ×. The evaluation of the temperature characteristics of the dielectric constant was carried out by setting the number of samples to 10 and calculating the average value.

(居里溫度)(Curie temperature)

居里溫度係作為於測定介電常數之溫度特性之範圍內介電常數達到最大之溫度而求出。The Curie temperature is obtained as the temperature at which the dielectric constant reaches the maximum in the range in which the temperature characteristics of the dielectric constant are measured.

(高溫負載試驗)(High temperature load test)

高溫負載試驗係於溫度為105℃或125℃、施加電壓為6 V/μm、1000小時之條件下進行。高溫負載試驗中之樣品數 係設為各樣品20個,將至1000小時為止無不良者評價為良品。再者,關於上述溫度,對於樣品No.1~80係於105℃進行,對於樣品No.81~110係於125℃進行。The high temperature load test was carried out at a temperature of 105 ° C or 125 ° C and an applied voltage of 6 V / μm for 1000 hours. Number of samples in high temperature load test Twenty samples were used for each sample, and those that did not deteriorate until 1000 hours were evaluated as good. Further, regarding the above temperature, samples No. 1 to 80 were carried out at 105 ° C, and sample Nos. 81 to 110 were carried out at 125 ° C.

(平均粒徑)(The average particle size)

構成介電質層之晶粒之平均粒徑係以如下方式求出。首先,對作為煅燒後之電容器本體的樣品之斷裂面進行研磨,然後使用掃描式電子顯微鏡拍攝內部組織之照片(倍率:30,000倍)。然後,於該照片上繪製包圍20~30個晶粒之圓,選擇圓內及圓周上之晶粒。接著,對各晶粒之輪廓進行圖像處理而求出各粒子之面積,計算出替換為具有相同面積之圓時之直徑,根據其平均值求出上述平均粒徑。The average particle diameter of the crystal grains constituting the dielectric layer was determined as follows. First, the fracture surface of the sample as the capacitor body after calcination was ground, and then a photograph of the internal structure (magnification: 30,000 times) was taken using a scanning electron microscope. Then, draw a circle surrounded by 20 to 30 crystal grains on the photo, and select the crystal grains in the circle and on the circumference. Next, the contour of each crystal grain was subjected to image processing to determine the area of each particle, and the diameter when the circle having the same area was replaced was calculated, and the average particle diameter was obtained from the average value.

再者,上述研磨係以如下方式實施:首先使用鑽石板對上述斷裂面進行粗研磨,然後使用#1000之砂紙進行研磨。然後,使用塗於硬質拋光輪上之鑽石液進行研磨,進而將粒徑為0.3 μm之氧化鋁研磨粒塗於軟質拋光輪上,進行精研磨。Further, the above-mentioned polishing was carried out by first rough grinding the fracture surface using a diamond plate, and then grinding it using #1000 sandpaper. Then, grinding was carried out using a diamond liquid coated on a hard polishing wheel, and alumina abrasive grains having a particle diameter of 0.3 μm were applied to a soft polishing wheel to perform finish polishing.

(鈣濃度.C2/(C1+C2))(calcium concentration. C2/(C1+C2))

關於晶粒中之鈣濃度,係使用附設有元素分析設備之穿透式電子顯微鏡,對藉由離子研磨將構成積層陶瓷電容器之介電質層之剖面研磨至可進行觀察之程度為止的研磨面上所存在之晶粒進行元素分析而求出。Regarding the calcium concentration in the crystal grains, the cross section of the dielectric layer constituting the laminated ceramic capacitor is polished to a level that can be observed by ion milling using a transmission electron microscope with an elemental analysis device. The crystal grains present on the upper surface were obtained by elemental analysis.

此時,電子束之光點尺寸係設為5 nm。分析部位係於自 晶粒之晶界附近朝中心繪製之直線上自晶界起大致等間隔地設定4~5點。然後,求出將自各測定點檢測出之Ba、Ti、Ca、V、Mg、RE(稀土元素)及Mn之總量設為100%時之鈣的比例,求出自各測定點所求出之鈣比例之平均值作為鈣濃度。At this time, the spot size of the electron beam was set to 5 nm. Analysis site is based on The straight line drawn toward the center near the grain boundary of the crystal grain is set at 4 to 5 points at substantially equal intervals from the grain boundary. Then, the ratio of calcium when the total amount of Ba, Ti, Ca, V, Mg, RE (rare earth element) and Mn detected from each measurement point is 100% is obtained, and the ratio obtained from each measurement point is obtained. The average of the calcium ratios is taken as the calcium concentration.

測定鈣濃度之晶粒係以如下方式選定。首先,使用穿透式電子顯微鏡,拍攝對構成積層陶瓷電容器的介電質層之剖面加以研磨所得的研磨面之照片。然後,於該照片上繪製包圍20~30個晶粒之圓,利用圖像處理根據位於該圓內及圓周上之各晶粒之輪廓求出各粒子之面積,計算出替換為具有相同面積之圓時之直徑。接著,將晶粒之直徑處於上述平均粒徑之±30%之範圍者作為上述晶粒。The crystallites for determining the calcium concentration were selected in the following manner. First, a photograph of a polished surface obtained by polishing a cross section of a dielectric layer constituting a laminated ceramic capacitor was taken using a transmission electron microscope. Then, a circle enclosing 20 to 30 crystal grains is drawn on the photo, and the area of each particle is obtained by image processing according to the contours of the respective crystal grains located in the circle and the circumference, and is calculated to be replaced with the same area. The diameter of the circle. Next, the crystal grain is in the range of ±30% of the above average particle diameter as the crystal grains.

另外,求出自位於該圓內及圓周上之各晶粒中選擇並測定之第1晶粒及第2晶粒各自之總面積,計算出C2/(C1+C2)之值。Further, the total area of each of the first crystal grains and the second crystal grains selected and measured from the respective crystal grains located in the circle and the circumference was determined, and the value of C2/(C1+C2) was calculated.

再者,如上所述,晶粒之中心係該晶粒之內接圓之中心,並且,所謂晶粒之晶界附近係指自該晶粒之晶界起至5 nm內側為止之區域。而且,晶粒之內接圓係將藉由穿透式電子顯微鏡映出之圖像取入至電腦中,於其畫面上對晶粒繪製內接圓,並決定晶粒之中心。Further, as described above, the center of the crystal grain is the center of the inscribed circle of the crystal grain, and the vicinity of the grain boundary of the crystal grain means a region from the grain boundary of the crystal grain to the inner side of 5 nm. Moreover, the inscribed circle of the die takes the image reflected by the transmission electron microscope into the computer, draws an inscribed circle on the grain on the screen, and determines the center of the die.

(X射線繞射:XRD)(X-ray diffraction: XRD)

顯示立方晶之鈦酸鋇之(200)面的繞射強度、與顯示正方 晶之鈦酸鋇之(002)面的繞射強度之比的測定係使用具備Cuk-α之管球之X射線繞射裝置,以角度2 θ=44~46°之範圍進行測定,根據波峰強度之比而求出。Shows the diffraction intensity of the (200) plane of cubic titanate, and shows the square The ratio of the diffraction intensity of the (002) plane of the strontium titanate is measured by using an X-ray diffraction apparatus having a Cuk-α tube, measured at an angle of 2 θ=44 to 46°, according to the peak The ratio of the strength is obtained.

(稀土元素、錳之濃度差)(difference in concentration of rare earth elements and manganese)

晶粒中所含之稀土元素及錳之濃度的測定係使用附設有元素分析儀(EDS)之穿透式電子顯微鏡來進行。對於分析之樣品,藉由離子研磨於積層方向上將積層陶瓷電容器研磨至可進行觀察之程度為止,於其經研磨之介電質層之表面上,分別選取利用上述鈣濃度之測定而判定的第1晶粒及第2晶粒。The measurement of the concentration of the rare earth element and manganese contained in the crystal grains was carried out using a transmission electron microscope attached with an elemental analyzer (EDS). For the sample to be analyzed, the multilayer ceramic capacitor was polished to a level that can be observed by ion milling in the lamination direction, and the surface of the ground dielectric layer was determined by the measurement of the calcium concentration. The first crystal grain and the second crystal grain.

對於選取之第1晶粒及第2晶粒,係分別利用圖像處理根據其輪廓求出各粒子之面積,計算出替換為具有相同面積之圓時之直徑,將各晶粒設定為處於藉由上述測定方法而求出之平均粒徑之±30%之範圍的晶粒。分別選取10個處於該範圍內之第1晶粒及第2晶粒。For the selected first crystal grain and the second crystal grain, the area of each particle is obtained from the contour by image processing, and the diameter when replacing the circle having the same area is calculated, and each crystal grain is set to be borrowed. The crystal grains in the range of ±30% of the average particle diameter obtained by the above measurement method. Ten first crystal grains and second crystal grains in the range are selected.

進行元素分析時之電子束之光點尺寸係設為1~3 nm。另外,分析部位係晶粒之表層部(距離晶粒之剖面之晶界為3 nm以內的區域)、以及距離表層部之深度為10 nm之位置。The spot size of the electron beam when performing elemental analysis is set to 1 to 3 nm. Further, the analysis portion is a surface portion of the crystal grain (a region within 3 nm from the grain boundary of the crystal grain profile) and a depth of 10 nm from the surface layer portion.

然後,使用上述方法,求出各個第1、第2晶粒之表層部的稀土元素及錳之濃度,並且求出距離表層部之深度為10 nm之位置的稀土元素及錳之濃度。Then, the concentration of the rare earth element and manganese in the surface layer portion of each of the first and second crystal grains was determined by the above method, and the concentration of the rare earth element and manganese at a position having a depth of 10 nm from the surface layer portion was determined.

根據以上述方式求出之各個第1、第2晶粒的稀土元素及 錳之濃度,分別求出各晶粒之表層部的錳濃度減去深度為10 nm之位置的錳濃度而得之濃度差、以及各晶粒之表層部的稀土元素濃度減去深度為10 nm之位置的稀土元素濃度而得之濃度差。具體而言,各對10個晶粒進行該作業,對根據各晶粒所求出之總計20個值計算晶粒之平均值而使用。According to the rare earth elements of each of the first and second crystal grains obtained in the above manner, The concentration of manganese is determined by determining the concentration of manganese in the surface layer of each crystal grain minus the concentration of manganese at a depth of 10 nm, and the concentration of rare earth elements in the surface layer of each crystal grain minus 10 nm. The concentration difference of the rare earth element concentration at the position. Specifically, this operation is performed for each of 10 pairs of crystal grains, and the average value of the crystal grains is calculated for a total of 20 values obtained from the respective crystal grains.

再者,表1、2、4、5及7~10所示之樣品中,本發明之樣品的構成積層陶瓷電容器之介電質陶瓷之晶粒中所含之稀土元素及錳(Mn)的濃度變化均顯示出與樣品No.3相同之傾向。Further, in the samples shown in Tables 1, 2, 4, 5 and 7 to 10, the rare earth element and manganese (Mn) contained in the crystal grains of the dielectric ceramic constituting the laminated ceramic capacitor of the sample of the present invention. The change in concentration showed the same tendency as sample No. 3.

(組成分析)(composition analysis)

作為所得燒結體之樣品的組成分析係利用感應耦合電漿(ICP,Inductively Coupled Plasma)分析或原子吸光分析來進行。於該情況下,使將所得介電質陶瓷與硼酸及碳酸鈉混合並加以熔融而得者溶解於鹽酸中,首先利用原子吸光分析進行介電質陶瓷中所含之元素之定性分析。然後,對於特定之各元素,將稀釋標準液而得者作為標準樣品,利用ICP發光分光分析進行定量。另外,將各元素之價數設為元素週期表中所示之價數而求出氧量。The composition analysis of the sample of the obtained sintered body was carried out by inductively coupled plasma (ICP) analysis or atomic absorption analysis. In this case, the obtained dielectric ceramics were mixed with boric acid and sodium carbonate and melted, and dissolved in hydrochloric acid. First, qualitative analysis of the elements contained in the dielectric ceramics was carried out by atomic absorption analysis. Then, for each specific element, the standard solution was diluted as a standard sample, and quantified by ICP emission spectrometry. Further, the amount of oxygen is determined by setting the valence of each element to the valence shown in the periodic table.

分別將調配組成及煅燒溫度示於表1~3,將燒結體中之各元素之以氧化物換算計的組成示於表4~6,將煅燒後之介電質層之厚度、晶粒之比率(C2/(C1+C2))、平均粒徑、 利用X射線繞射測定之立方晶與正方晶之波峰強度比、居里溫度、晶粒之表層部及距離表層部之深度為10 nm之位置的稀土元素及錳之濃度差、特性(介電常數、介電損失、介電常數(根據靜電電容之溫度特性而求出)之溫度特性、高溫負載試驗中之壽命)之結果示於表7~12。The composition and calcination temperature are shown in Tables 1 to 3, respectively. The composition of each element in the sintered body in terms of oxide is shown in Tables 4 to 6, and the thickness of the dielectric layer after calcination and the crystal grains are Ratio (C2/(C1+C2)), average particle size, Density and characteristics of rare earth elements and manganese at a position where the intensity ratio of the cubic crystal and the tetragonal crystal is measured by X-ray diffraction, the Curie temperature, the surface portion of the crystal grain, and the depth of the surface layer portion are 10 nm (dielectric The results of the constant, dielectric loss, dielectric constant (determined from the temperature characteristics of the electrostatic capacitance) and the lifetime in the high-temperature load test are shown in Tables 7 to 12.

根據表1~12之結果可明確,本發明之樣品No.2~5、8~13、16~19、22~25、28~31、33~35、37~39、41~80、82、83、86~88、91~94、97、100、101、103~105及107~109係室溫(25℃)之介電常數為3500以上,介電損失為12.5%以下,介電常數之溫度特性滿足X6S,並且將AC電壓設為1 V時之介電常數為將AC電壓設為0.01 V時之介電常數之2倍以下,進而,於高溫負載試驗中無不良。According to the results of Tables 1 to 12, samples No. 2 to 5, 8 to 13, 16 to 19, 22 to 25, 28 to 31, 33 to 35, 37 to 39, 41 to 80, and 82 of the present invention can be clarified. 83, 86~88, 91~94, 97, 100, 101, 103~105 and 107~109 have a dielectric constant of 3500 or more at room temperature (25 °C), a dielectric loss of 12.5% or less, and a dielectric constant. The temperature characteristic satisfies X6S, and the dielectric constant when the AC voltage is 1 V is twice or less the dielectric constant when the AC voltage is 0.01 V, and further, there is no defect in the high-temperature load test.

另外,將由鈣濃度為0.2原子%以下之晶粒所組成的第1晶粒以及由鈣濃度為0.4原子%以上之晶粒所組成的第2晶粒之面積比C2/(C1+C2)設為0.4~0.6之樣品No.38、39、42、43、45、46、48、49、51、52、54、55、57~67、69、70、72、73、75、76、78~80、108以及109係室溫(25℃)之介電常數為4000以上。Further, the area ratio of the first crystal grains composed of crystal grains having a calcium concentration of 0.2 atom% or less and the second crystal grains composed of crystal grains having a calcium concentration of 0.4 atom% or more are set to C2/(C1+C2). Sample No. 38, 39, 42, 43, 45, 46, 48, 49, 51, 52, 54, 55, 57-67, 69, 70, 72, 73, 75, 76, 78~ from 0.4 to 0.6 The dielectric constants of room temperature (25 ° C) of 80, 108 and 109 are 4000 or more.

另外,作為構成介電質層之介電質陶瓷之組成,相對於構成鈦酸鋇之鈦100莫耳,將釩設為以V2 O5 換算計為0.02~0.08莫耳,將鎂設為以MgO換算計為0.3~0.6莫耳,將錳設為以MnO換算計為0.2~0.4莫耳,將自釔、鏑、鈥及鉺中選擇之至少1種稀土元素設為以RE2 O3 換算計為0.4~0.6莫耳,以及將鋱設為以Tb4 O7 換算計為0.02~0.08莫耳之樣品No.50~80係將AC電壓設為1 V時之介電常數為將AC電壓設為0.01 V時之介電常數之1.5倍以下。In addition, as a composition of the dielectric ceramic constituting the dielectric layer, the vanadium is set to 0.02 to 0.08 mol in terms of V 2 O 5 with respect to 100 mol of titanium constituting barium titanate, and magnesium is set. It is 0.3 to 0.6 m in terms of MgO, and 0.2 to 0.4 m in terms of MnO, and at least one rare earth element selected from lanthanum, cerium, lanthanum and cerium is set to RE 2 O 3 . The conversion is 0.4 to 0.6 m, and the 鋱 is set to 0.02 to 0.08 mol in terms of Tb 4 O 7 . No. 50 to 80. The dielectric constant when the AC voltage is 1 V is AC. The voltage is set to be less than 1.5 times the dielectric constant at 0.01 V.

另外,將構成介電質層之晶粒之平均粒徑設為0.14~0.28 μm之範圍的樣品No.2~5、8~12、16~19、22~25、28~31、33~35、37~39、41~77、79、80、82、83、86~88、91~94、97、100、101、103~105及107~109係介電常數為3500以上,介電損失為12.5%以下,介電常數之溫度特性滿足X6S,將AC電壓設為1 V時之介電常數為將AC電壓設為0.01 V時之介電常數之1.9倍以下。In addition, the average particle diameter of the crystal grains constituting the dielectric layer is set to 0.14 to 0.28. Samples No. 2~5, 8~12, 16~19, 22~25, 28~31, 33~35, 37~39, 41~77, 79, 80, 82, 83, 86~88 in the range of μm The dielectric constants of 91~94, 97, 100, 101, 103~105 and 107~109 are more than 3500, the dielectric loss is below 12.5%, the dielectric constant of the dielectric constant satisfies X6S, and the AC voltage is set to 1 V. The dielectric constant at this time is 1.9 times or less of the dielectric constant when the AC voltage is set to 0.01 V.

進而,作為構成介電質層之介電質陶瓷之組成,將鋱設為以Tb4 O7 換算計為0.05~0.08莫耳之樣品No.2、53~67、71~80及82係介電常數之變異係數為0.9以下,不均一較小。Further, as a composition of the dielectric ceramic constituting the dielectric layer, 鋱 is a sample No. 2, 53-67, 71-80, and 82-series in the range of 0.05 to 0.08 mol in terms of Tb 4 O 7 . The coefficient of variation of the electric constant is 0.9 or less, and the unevenness is small.

再者,根據圖5(a)可知,構成樣品No.3之積層陶瓷電容器中之介電質層的第1晶粒及第2晶粒中,表層部之錳(Mn)濃度減去深度為10 nm之位置的錳(Mn)濃度而得之濃度差為0.3原子%以下,並且表層部之稀土元素(Y)濃度減去深度為10 nm之位置的稀土元素(Y)濃度而得之濃度差為0.7原子%以上。另外,關於本發明之其他樣品(樣品No.2、4、5、8~13、16~19、22~25、28~31、33~35、37~39、41~80、82、83、86~88、91~94、97、100、101、103~105及107~109),亦與樣品No.3同樣地具有如下濃度差:表層部之錳(Mn)濃度減去深度為10 nm之位置的錳(Mn)濃度而得之濃度差為0.3原子%以下,並且表層部之稀土元素濃度減去深度為10 nm之位置的稀土元素濃度而得之濃度差為0.7原子%以上。Further, as is clear from Fig. 5(a), in the first crystal grain and the second crystal grain of the dielectric layer in the multilayer ceramic capacitor of the sample No. 3, the manganese (Mn) concentration in the surface layer portion is subtracted from the depth. The concentration difference of manganese (Mn) at a position of 10 nm is 0.3 atom% or less, and the concentration of the rare earth element (Y) in the surface layer is subtracted from the concentration of the rare earth element (Y) at a depth of 10 nm. The difference is 0.7 atom% or more. In addition, other samples of the present invention (sample No. 2, 4, 5, 8 to 13, 16 to 19, 22 to 25, 28 to 31, 33 to 35, 37 to 39, 41 to 80, 82, 83, 86~88, 91~94, 97, 100, 101, 103~105, and 107~109) also have the following concentration difference similarly to sample No. 3: manganese (Mn) concentration in the surface layer minus 10 nm The concentration difference of the manganese (Mn) concentration at the position is 0.3 atom% or less, and the concentration of the rare earth element in the surface layer portion minus the concentration of the rare earth element at a position having a depth of 10 nm is 0.7 atom% or more.

另外,作為構成介電質層之介電質陶瓷之組成,相對於構成 鈦酸鋇之鈦100莫耳,將釩設為以V2 O5 換算計為0.05~0.1莫耳,將鎂設為以MgO換算計為0.2~0.8莫耳,將錳設為以MnO換算計為0.2~0.3莫耳,將自釔、鏑、鈥及鉺中選擇之至少1種稀土元素設為以RE2 O3 換算計為0.4~0.6莫耳,以及將鋱設為以Tb4 O7 換算計為0.05~0.1莫耳,並且將第1晶粒及第2晶粒之平均粒徑設為0.14~0.19 μm之樣品No.82、83、86~88、91~94、97、100、101、103~105及107~109,其於將高溫負載試驗之溫度設為125℃、將電壓設為6 V之條件下均係於1000小時以上無不良。In addition, as a composition of the dielectric ceramic constituting the dielectric layer, the vanadium is set to 0.05 to 0.1 m in terms of V 2 O 5 with respect to 100 mol of titanium constituting barium titanate, and magnesium is set to In terms of MgO, it is 0.2 to 0.8 m, and manganese is 0.2 to 0.3 m in terms of MnO, and at least one rare earth element selected from lanthanum, cerium, lanthanum and cerium is set to RE 2 O 3 . The conversion is 0.4 to 0.6 m, and the enthalpy is set to 0.05 to 0.1 m in terms of Tb 4 O 7 , and the average grain size of the first crystal grain and the second crystal grain is set to 0.14 to 0.19 μm. Sample Nos. 82, 83, 86 to 88, 91 to 94, 97, 100, 101, 103 to 105, and 107 to 109, which were set to a temperature of 125 ° C and a voltage of 6 V in a high temperature load test. The lower ones are not bad for more than 1000 hours.

相對於此,本發明之範圍外之樣品No.1、6、7、14、15、20、21、26、27、32、36、40、81、84、85、89、90、95、96、98、99、102、106及110不滿足如下任一特性:室溫(25℃)下之介電常數為3500以上,介電損失為12.5%以下,介電常數之溫度特性滿足X6S,將AC電壓設為1 V時之介電常數為將AC電壓設為0.01 V時之介電常數之2倍以下,以及高溫負載試驗中之壽命。In contrast, samples No. 1, 6, 7, 14, 15, 20, 21, 26, 27, 32, 36, 40, 81, 84, 85, 89, 90, 95, 96 outside the scope of the present invention , 98, 99, 102, 106, and 110 do not satisfy any of the following characteristics: a dielectric constant of 3500 or more at room temperature (25 ° C), a dielectric loss of 12.5% or less, and a temperature characteristic of the dielectric constant satisfying X6S, When the AC voltage is set to 1 V, the dielectric constant is twice or less the dielectric constant when the AC voltage is set to 0.01 V, and the lifetime in the high-temperature load test.

另外,對將結晶構造為核-殼構造、居里溫度顯示125℃之介電質陶瓷作為介電質層之樣品No.1之錳及稀土元素(Y)的濃度進行觀察,則由圖5(b)可知,表層部之錳濃度減去深度為10 nm之位置的錳濃度而得之濃度差為0.5原子%,並且表層部之稀土元素(Y)濃度減去深度為10 nm之位置的稀土元素(Y)濃度而得之濃度差為0.8原子%。In addition, the concentration of manganese and rare earth element (Y) of sample No. 1 in which the crystal structure is a core-shell structure and the dielectric ceramic having a Curie temperature of 125 ° C is used as the dielectric layer is observed. (b) It can be seen that the concentration of manganese in the surface layer minus the concentration of manganese at a depth of 10 nm is 0.5 atom%, and the concentration of the rare earth element (Y) in the surface portion is reduced to a depth of 10 nm. The concentration difference of the rare earth element (Y) concentration was 0.8 atom%.

另外,對立方晶波峰強度小於正方晶波峰強度、且居里溫度為91℃之樣品No.6之錳及稀土元素(Y)的濃度進行觀察,則由圖5(c)可知,表層部之錳濃度減去深度為10 nm之位置的錳濃度而得之濃度差、以及表層部之稀土元素(Y)濃度減去深度為10 nm之位置的稀土元素(Y)濃度而得之濃度差均小於0.2原子%。Further, when the concentration of the manganese and the rare earth element (Y) of the sample No. 6 in which the cubic crystal wave peak intensity is less than the tetragonal peak intensity and the Curie temperature is 91 ° C is observed, it is understood from Fig. 5 (c) that the surface layer portion is The difference in concentration between the concentration of manganese minus the concentration of manganese at a depth of 10 nm, and the concentration of rare earth element (Y) in the surface layer minus the concentration of rare earth element (Y) at a depth of 10 nm Less than 0.2 atom%.

再者,構成所製作之積層陶瓷電容器之介電質層的晶粒中,第2晶粒之鈣濃度於分析範圍內均為0.5~1.5原子%。Further, in the crystal grains constituting the dielectric layer of the produced multilayer ceramic capacitor, the calcium concentration of the second crystal grains is 0.5 to 1.5 atom% in the analysis range.

1‧‧‧電容器本體1‧‧‧ capacitor body

3‧‧‧外部電極3‧‧‧External electrode

5‧‧‧介電質層5‧‧‧ dielectric layer

7‧‧‧內部電極層7‧‧‧Internal electrode layer

9‧‧‧晶粒9‧‧‧ grain

9a‧‧‧第1晶粒9a‧‧‧1st grain

9b‧‧‧第2晶粒9b‧‧‧2nd grain

11‧‧‧晶界相11‧‧‧ grain boundary phase

圖1係表示本發明之積層陶瓷電容器之一例之概略剖面圖。Fig. 1 is a schematic cross-sectional view showing an example of a multilayer ceramic capacitor of the present invention.

圖2係構成圖1所示之積層陶瓷電容器之介電質層之放大圖,且係表示晶粒與晶界相之示意圖。Fig. 2 is an enlarged view showing a dielectric layer constituting the multilayer ceramic capacitor shown in Fig. 1, and is a view showing a crystal grain and a grain boundary phase.

圖3係實施例中之樣品No.3之X射線繞射圖。Figure 3 is an X-ray diffraction pattern of sample No. 3 in the examples.

圖4係表示實施例中之樣品No.3之靜電電容之溫度特性的圖表。Fig. 4 is a graph showing the temperature characteristics of the electrostatic capacitance of the sample No. 3 in the examples.

圖5(a)係表示構成實施例中之樣品No.3之積層陶瓷電容器的介電質陶瓷之晶粒中所含之稀土元素及錳之濃度變化的圖表,圖5(b)係表示構成實施例中之樣品No.1之積層陶瓷電容器的介電質陶瓷之晶粒中所含之稀土元素及錳之濃度變化的圖表,圖5(c)係表示構成實施例中之樣品No.6之積層陶瓷電容器的介電質陶瓷之晶粒中所含之稀土元素及錳之濃度變化的圖表。Fig. 5 (a) is a graph showing changes in the concentration of rare earth elements and manganese contained in crystal grains of a dielectric ceramic constituting the multilayer ceramic capacitor of sample No. 3 of the example, and Fig. 5 (b) shows the composition. A graph showing changes in the concentration of rare earth elements and manganese contained in the crystal grains of the dielectric ceramic of the multilayer ceramic capacitor of the sample No. 1 in the example, and FIG. 5(c) shows the sample No. 6 constituting the example. A graph showing the change in concentration of rare earth elements and manganese contained in the crystal grains of the dielectric ceramic of the multilayer ceramic capacitor.

1‧‧‧電容器本體1‧‧‧ capacitor body

3‧‧‧外部電極3‧‧‧External electrode

5‧‧‧介電質層5‧‧‧ dielectric layer

7‧‧‧內部電極層7‧‧‧Internal electrode layer

Claims (6)

一種積層陶瓷電容器,其係將介電質層與內部電極層交替積層而形成者,上述介電質層係由將鈦酸鋇作為主成分,且含有鈣、鎂、釩、錳、鋱以及自釔、鏑、鈥及鉺中選擇之至少1種稀土元素之介電質陶瓷所構成,上述積層陶瓷電容器之特徵在於,上述介電質陶瓷中,相對於構成上述鈦酸鋇之鈦100莫耳,係含有:以V2 O5 換算計為0.02~0.2莫耳之上述釩,以MgO換算計為0.2~0.8莫耳之上述鎂,以MnO換算計為0.1~0.5莫耳之上述錳,以RE2 O3 換算計為0.3~0.8莫耳之自釔、鏑、鈥及鉺中選擇之至少1種上述稀土元素,以及以Tb4 O7 換算計為0.02~0.2莫耳之上述鋱;並且,構成上述介電質陶瓷之結晶係具有:第1結晶群組,其係由將上述鈦酸鋇作為主成分,且上述鈣之濃度為0.2原子%以下之第1晶粒所組成;以及第2結晶群組,其係由將上述鈦酸鋇作為主成分,且上述鈣之濃度為0.4原子%以上之第2晶粒所組成;將於上述介電質陶瓷之研磨面上所觀察到之上述第1晶粒的面積設為C1、將上述第2晶粒之面積設為C2時,C2/(C1+C2)為0.3~0.7; 於上述介電質陶瓷之X射線繞射圖中,顯示立方晶之鈦酸鋇之(200)面的繞射強度係大於顯示正方晶之鈦酸鋇之(002)面的繞射強度,且居里溫度為95~105℃。A multilayer ceramic capacitor formed by alternately laminating a dielectric layer and a internal electrode layer, wherein the dielectric layer contains barium titanate as a main component and contains calcium, magnesium, vanadium, manganese, lanthanum, and a dielectric ceramic of at least one rare earth element selected from the group consisting of lanthanum, cerium, lanthanum and cerium, wherein the above-mentioned multilayer ceramic capacitor is characterized in that the dielectric ceramic is 100 mils relative to the titanium strontium titanate. The above-mentioned vanadium containing 0.02 to 0.2 mol of V 2 O 5 in terms of MgO, 0.2 to 0.8 mol of the above-mentioned magnesium in terms of MgO, and 0.1 to 0.5 mol of the above-mentioned manganese in terms of MnO, The RE 2 O 3 conversion is at least one of the above-mentioned rare earth elements selected from the group consisting of ruthenium, osmium, iridium and osmium in an amount of from 0.3 to 0.8 mol, and the above-mentioned ruthenium of from 0.02 to 0.2 mol in terms of Tb 4 O 7 ; The crystal system constituting the dielectric ceramic has a first crystal group composed of the first crystal grains having the barium titanate as a main component and the calcium concentration of 0.2 atom% or less; a group of 2 crystals obtained by using the above barium titanate as a main component, and the concentration of the above calcium is 0 a second crystal grain of 4 atom% or more; the area of the first crystal grain observed on the polished surface of the dielectric ceramic is C1, and the area of the second crystal grain is C2 When C2/(C1+C2) is 0.3~0.7; in the X-ray diffraction diagram of the above dielectric ceramic, it is shown that the diffraction intensity of the (200) plane of the cubic crystal of barium titanate is larger than that of the square crystal The diffraction intensity of the (002) plane of barium titanate, and the Curie temperature is 95 to 105 °C. 如申請專利範圍第1項之積層陶瓷電容器,其中,上述第1晶粒及上述第2晶粒之平均粒徑為0.14~0.28 μm。 The multilayer ceramic capacitor according to the first aspect of the invention, wherein the first crystal grain and the second crystal grain have an average particle diameter of 0.14 to 0.28 μm. 如申請專利範圍第1項之積層陶瓷電容器,其中,上述C2/(C1+C2)為0.4~0.6。 The multilayer ceramic capacitor of the first aspect of the patent application, wherein the C2/(C1+C2) is 0.4 to 0.6. 如申請專利範圍第1或3項之積層陶瓷電容器,其中,上述介電質陶瓷中,相對於構成上述鈦酸鋇之鈦100莫耳,係含有:以V2 O5 換算計為0.02~0.08莫耳之上述釩,以MgO換算計為0.3~0.6莫耳之上述鎂,以MnO換算計為0.2~0.4莫耳之上述錳,以RE2 O3 換算計為0.4~0.6莫耳之自釔、鏑、鈥及鉺中選擇之至少1種上述稀土元素,以及以Tb4 O7 換算計為0.02~0.08莫耳之上述鋱。The multilayer ceramic capacitor according to the first or third aspect of the invention, wherein the dielectric ceramic includes: 0.02 to 0.08 in terms of V 2 O 5 with respect to 100 mol of titanium constituting the barium titanate. The vanadium of the moir is 0.3 to 0.6 m of the above-mentioned magnesium in terms of MgO, and the above-mentioned manganese is 0.2 to 0.4 mol in terms of MnO, and is 0.4 to 0.6 m in terms of RE 2 O 3 . At least one of the above-mentioned rare earth elements selected from the group consisting of ruthenium, osmium and iridium, and the above-mentioned ruthenium in an amount of from 0.02 to 0.08 mol in terms of Tb 4 O 7 . 如申請專利範圍第1項之積層陶瓷電容器,其中,上述介電質陶瓷中,相對於構成上述鈦酸鋇之鈦100莫耳,係含有以Tb4 O7 換算計為0.05~0.08莫耳之上述鋱。The multilayer ceramic capacitor according to the first aspect of the invention, wherein the dielectric ceramic is contained in an amount of 0.05 to 0.08 m in terms of Tb 4 O 7 with respect to 100 mol of titanium constituting the barium titanate. The above 鋱. 如申請專利範圍第1項之積層陶瓷電容器,其中,上述介電質陶瓷中,相對於構成上述鈦酸鋇之鈦100莫耳,係含有:以V2 O5 換算計為0.05~0.1莫耳之上述釩, 以MgO換算計為0.2~0.8莫耳之上述鎂,以MnO換算計為0.2~0.3莫耳之上述錳,以RE2 O3 換算計為0.4~0.6莫耳之自釔、鏑、鈥及鉺中選擇之至少1種上述稀土元素,以及以Tb4 O7 換算計為0.05~0.1莫耳之上述鋱;並且,上述第1晶粒及上述第2晶粒之平均粒徑為0.14~0.19 μm。The multilayer ceramic capacitor according to the first aspect of the invention, wherein the dielectric ceramic comprises: 0.05 to 0.1 m in terms of V 2 O 5 with respect to 100 mol of titanium constituting the barium titanate. The vanadium is 0.2 to 0.8 m of the above-mentioned magnesium in terms of MgO, and the manganese is 0.2 to 0.3 mol in terms of MnO, and is 0.4 to 0.6 m in terms of RE 2 O 3 . And at least one of the rare earth elements selected from the group consisting of ruthenium and osmium, and the ruthenium of 0.05 to 0.1 mol in terms of Tb 4 O 7 ; and the average grain size of the first crystal grain and the second crystal grain are 0.14~0.19 μm.
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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1257052A (en) * 1998-07-29 2000-06-21 Tdk株式会社 Dielectric ceramic composition and electronic elements thereof

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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