TWI411775B - 利用漫射反射之測量提高ｘ光反射測量 - Google Patents

利用漫射反射之測量提高ｘ光反射測量 Download PDF

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Publication number
TWI411775B
TWI411775B TW094125805A TW94125805A TWI411775B TW I411775 B TWI411775 B TW I411775B TW 094125805 A TW094125805 A TW 094125805A TW 94125805 A TW94125805 A TW 94125805A TW I411775 B TWI411775 B TW I411775B
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TW
Taiwan
Prior art keywords
sample
reflectance spectrum
reflectance
rays
diffuse
Prior art date
Application number
TW094125805A
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English (en)
Chinese (zh)
Other versions
TW200619612A (en
Inventor
David Berman
Isaac Mazor
Boris Yokhin
Amos Gvirtzman
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Jordan Valley Applied Radiation Ltd
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Publication of TW200619612A publication Critical patent/TW200619612A/zh
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Publication of TWI411775B publication Critical patent/TWI411775B/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/203—Measuring back scattering
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G01B15/02—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Electromagnetism (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
TW094125805A 2004-07-30 2005-07-29 利用漫射反射之測量提高ｘ光反射測量 TWI411775B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/902,177 US7068753B2 (en) 2004-07-30 2004-07-30 Enhancement of X-ray reflectometry by measurement of diffuse reflections

Publications (2)

Publication Number Publication Date
TW200619612A TW200619612A (en) 2006-06-16
TWI411775B true TWI411775B (zh) 2013-10-11

Family

ID=35732192

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094125805A TWI411775B (zh) 2004-07-30 2005-07-29 利用漫射反射之測量提高ｘ光反射測量

Country Status (4)

Country Link
US (2) US7068753B2 (enExample)
JP (1) JP2006058293A (enExample)
KR (1) KR101242520B1 (enExample)
TW (1) TWI411775B (enExample)

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US7120228B2 (en) * 2004-09-21 2006-10-10 Jordan Valley Applied Radiation Ltd. Combined X-ray reflectometer and diffractometer
US7804934B2 (en) 2004-12-22 2010-09-28 Jordan Valley Semiconductors Ltd. Accurate measurement of layer dimensions using XRF
US7605366B2 (en) 2005-09-21 2009-10-20 Troxler Electronic Laboratories, Inc. Nuclear density gauge
KR101374308B1 (ko) * 2005-12-23 2014-03-14 조르단 밸리 세미컨덕터즈 리미티드 Ｘｒｆ를 사용한 층 치수의 정밀 측정법
US20070274447A1 (en) * 2006-05-15 2007-11-29 Isaac Mazor Automated selection of X-ray reflectometry measurement locations
IL180482A0 (en) * 2007-01-01 2007-06-03 Jordan Valley Semiconductors Inspection of small features using x - ray fluorescence
US7920676B2 (en) * 2007-05-04 2011-04-05 Xradia, Inc. CD-GISAXS system and method
US7680243B2 (en) * 2007-09-06 2010-03-16 Jordan Valley Semiconductors Ltd. X-ray measurement of properties of nano-particles
JP2009109387A (ja) * 2007-10-31 2009-05-21 Fujitsu Ltd 試料分析装置および試料分析方法
US8243878B2 (en) 2010-01-07 2012-08-14 Jordan Valley Semiconductors Ltd. High-resolution X-ray diffraction measurement with enhanced sensitivity
US8687766B2 (en) 2010-07-13 2014-04-01 Jordan Valley Semiconductors Ltd. Enhancing accuracy of fast high-resolution X-ray diffractometry
US8437450B2 (en) 2010-12-02 2013-05-07 Jordan Valley Semiconductors Ltd. Fast measurement of X-ray diffraction from tilted layers
US8781070B2 (en) 2011-08-11 2014-07-15 Jordan Valley Semiconductors Ltd. Detection of wafer-edge defects
US9390984B2 (en) 2011-10-11 2016-07-12 Bruker Jv Israel Ltd. X-ray inspection of bumps on a semiconductor substrate
US9389192B2 (en) 2013-03-24 2016-07-12 Bruker Jv Israel Ltd. Estimation of XRF intensity from an array of micro-bumps
US9551677B2 (en) * 2014-01-21 2017-01-24 Bruker Jv Israel Ltd. Angle calibration for grazing-incidence X-ray fluorescence (GIXRF)
US9632043B2 (en) 2014-05-13 2017-04-25 Bruker Jv Israel Ltd. Method for accurately determining the thickness and/or elemental composition of small features on thin-substrates using micro-XRF
US9726624B2 (en) 2014-06-18 2017-08-08 Bruker Jv Israel Ltd. Using multiple sources/detectors for high-throughput X-ray topography measurement
US9829448B2 (en) 2014-10-30 2017-11-28 Bruker Jv Israel Ltd. Measurement of small features using XRF
IL253578B (en) * 2017-07-19 2018-06-28 Nova Measuring Instr Ltd Measurement of patterns using x-rays
US11703464B2 (en) 2018-07-28 2023-07-18 Bruker Technologies Ltd. Small-angle x-ray scatterometry
IL304139B2 (en) * 2020-12-31 2024-09-01 נובה בע מ Measurement of X-ray marks from a truncated object
US11781999B2 (en) 2021-09-05 2023-10-10 Bruker Technologies Ltd. Spot-size control in reflection-based and scatterometry-based X-ray metrology systems
US12249059B2 (en) 2022-03-31 2025-03-11 Bruker Technologies Ltd. Navigation accuracy using camera coupled with detector assembly

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Also Published As

Publication number Publication date
US20060023836A1 (en) 2006-02-02
US20060182220A1 (en) 2006-08-17
US7231016B2 (en) 2007-06-12
KR20060048904A (ko) 2006-05-18
KR101242520B1 (ko) 2013-03-12
TW200619612A (en) 2006-06-16
US7068753B2 (en) 2006-06-27
JP2006058293A (ja) 2006-03-02

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