TWI411140B - Led package structure using two-count package and method of manufacturing the same - Google Patents

Led package structure using two-count package and method of manufacturing the same Download PDF

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TWI411140B
TWI411140B TW98143874A TW98143874A TWI411140B TW I411140 B TWI411140 B TW I411140B TW 98143874 A TW98143874 A TW 98143874A TW 98143874 A TW98143874 A TW 98143874A TW I411140 B TWI411140 B TW I411140B
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unit
conductive layer
positive
negative
conductive
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TW98143874A
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TW201123544A (en
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Bily Wang
Jonnie Chuang
Sung Yi Hsiao
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Harvatek Corp
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Abstract

An LED package structure using two-count package includes a light-emitting chip unit, an insulative unit, a first conductive unit, a substrate unit and a package unit. The light-emitting chip unit has a positive conductive layer and a negative conductive layer. The insulative unit is formed between the positive conductive layer and the negative conductive layer. The first conductive unit has a positive pad formed on the positive conductive layer and a negative pad formed on the negative conductive layer. The light-emitting chip unit is electrically disposed on the substrate unit. The light-emitting chip unit and one part of the top surface of the substrate unit are covered with the package unit.

Description

採用二次封裝之發光二極體封裝結構及其製作方法Light-emitting diode package structure using secondary package and manufacturing method thereof

本發明係有關於一種發光二極體封裝結構及其製作方法,尤指一種採用二次封裝之發光二極體封裝結構及其製作方法。The invention relates to a light emitting diode package structure and a manufacturing method thereof, in particular to a light emitting diode package structure using a secondary package and a manufacturing method thereof.

請參閱第一圖所示,習知發光二極體封裝結構係採用一次封裝的方式來完成。此習知發光二極體封裝結構係具有一發光裸晶單元1a、一基板單元5a、一導電單元3a及一封裝單元7a。Referring to the first figure, the conventional LED package structure is completed in a single package. The conventional LED package structure has a light-emitting diode unit 1a, a substrate unit 5a, a conductive unit 3a and a package unit 7a.

其中,該發光裸晶單元1a的上表面係具有一正極導電層Pa及一負極導電層Na,並且該發光裸晶單元1a係透過該導電單元3a的兩個導線30a而電性設置於該基板單元5a上,最後再透過該封裝單元7a來覆蓋上述的發光裸晶單元1a、該導電單元3a及部分的基板單元5a,以完成習知發光二極體封裝結構。The upper surface of the illuminating die unit 1a has a positive conductive layer Pa and a negative conductive layer Na, and the illuminating die unit 1a is electrically disposed on the substrate through the two wires 30a of the conductive unit 3a. On the unit 5a, the package unit 7a is finally used to cover the above-mentioned light-emitting bare cell unit 1a, the conductive unit 3a and part of the substrate unit 5a to complete the conventional light-emitting diode package structure.

然而,上述發光裸晶單元1a的製作與習知發光二極體封裝結構的封裝可能由兩家廠商來分別負責,對於製作該發光裸晶單元1a的廠商來說,如果該發光裸晶單元1a在運送過程中沒有得到完善的保護時,該發光裸晶單元1a的良率將受到很大的影響,亦即在運送該發光裸晶單元1a的過程中可能因為碰狀等因素而使得該發光裸晶單元1a形成不良品。However, the fabrication of the above-described illuminating die unit 1a and the packaging of the conventional illuminating diode package structure may be separately undertaken by two manufacturers. For the manufacturer of the illuminating die unit 1a, if the illuminating die unit 1a is used, When the protection is not well protected, the yield of the illuminating die unit 1a will be greatly affected, that is, the illuminating may be caused by factors such as a bump during the transportation of the illuminating die unit 1a. The bare crystal unit 1a forms a defective product.

緣是,本發明人有感上述缺失之可改善,且依據多年來從事此方面之相關經驗,悉心觀察且研究之,並配合學理之運用,而提出一種設計合理且有效改善上述缺失之本發明。The reason is that the inventors have felt that the above-mentioned defects can be improved, and based on the relevant experience in this field for many years, carefully observed and studied, and in conjunction with the application of the theory, a present invention which is reasonable in design and effective in improving the above-mentioned defects is proposed. .

本發明所要解決的技術問題,在於提供一種採用二次封裝之發光二極體封裝結構及其製作方法,其透過二次封裝的方式,以達到「在運送發光裸晶單元的過程中能使得發光裸晶單元得到保護作用」之目的。The technical problem to be solved by the present invention is to provide a light-emitting diode package structure using a secondary package and a manufacturing method thereof, which are capable of illuminating in the process of transporting the light-emitting bare crystal unit by means of secondary packaging. The bare crystal unit is protected.

另外,本發明透過第一次封裝,以製作出發光裸晶單元的正極導電焊墊及負極導電焊墊,因此本發明不需經過任何的打線過程;然後再透過覆晶的方式將上述經過一次封裝後的發光裸晶單元電性設置於一基板單元上,以使得發光裸晶單元與基板單元之間產生電性連接;最後再進行第二次封裝,以完成本發明的製作。In addition, the present invention passes through the first package to fabricate the positive electrode conductive pad and the negative electrode conductive pad of the light emitting bare cell, so the present invention does not need to go through any wire bonding process; The packaged illuminating die unit is electrically disposed on a substrate unit to electrically connect the illuminating die unit to the substrate unit; and finally, the second package is performed to complete the fabrication of the present invention.

為了解決上述技術問題,根據本發明之其中一種方案,提供一種採用二次封裝之發光二極體封裝結構,其包括:一發光裸晶單元、一絕緣單元、一第一導電單元、一基板單元及一封裝單元。其中,該發光裸晶單元係具有一正極導電層及一負極導電層。該絕緣單元係成形於該正極導電層與該負極導電層之間。該第一導電單元係具有一成形於該正極導電層上之正極導電焊墊及一成形於該負極導電層上之負極導電焊墊。該基板單元之上表面係至少具有一正極導電區域及一負極導電區域,其中透過該正極導電焊墊電性接觸於該正極導電區域及該負極導電焊墊電性接觸於該負極導電區域,以使得該發光裸晶單元電性設置於該基板單元上。該封裝單元係覆蓋該發光裸晶單元及該基板單元的一部分上表面。In order to solve the above technical problem, according to one aspect of the present invention, a light emitting diode package structure using a secondary package is provided, comprising: a light emitting bare cell, an insulating unit, a first conductive unit, and a substrate unit. And a package unit. The illuminating die unit has a positive conductive layer and a negative conductive layer. The insulating unit is formed between the positive conductive layer and the negative conductive layer. The first conductive unit has a positive conductive pad formed on the positive conductive layer and a negative conductive pad formed on the negative conductive layer. The upper surface of the substrate unit has at least one positive conductive region and one negative conductive region, wherein the positive conductive pad is electrically contacted with the positive conductive region and the negative conductive pad is electrically contacted with the negative conductive region to The illuminating die unit is electrically disposed on the substrate unit. The package unit covers the light emitting bare cell and a portion of the upper surface of the substrate unit.

為了解決上述技術問題,根據本發明之其中一種方案,提供一種採用二次封裝之發光二極體封裝結構的製作方法,其包括下列步驟:首先,提供一發光裸晶單元,其具有一正極導電層及一負極導電層;接著,形成一絕緣單元於該正極導電層與該負極導電層之間;然後,分別形成一正極導電焊墊及一負極導電焊墊於該正極導電層上及該負極導電層上,以完成第一次的封裝;接下來,將該發光裸晶單元電性設置於一基板單元上,其中該基板單元的上表面係至少具有一正極導電區域及一負極導電區域,該正極導電焊墊電性接觸於該正極導電區域,並且該負極導電焊墊電性接觸於該負極導電區域;最後,使用一封裝單元來覆蓋該發光裸晶單元及該基板單元的一部分上表面。In order to solve the above technical problem, according to one aspect of the present invention, a method for fabricating a light emitting diode package structure using a secondary package is provided, comprising the steps of: firstly, providing a light emitting bare crystal unit having a positive electrode conductive a layer and a negative electrode conductive layer; then, forming an insulating unit between the positive electrode conductive layer and the negative electrode conductive layer; and then forming a positive electrode conductive pad and a negative electrode conductive pad on the positive electrode conductive layer and the negative electrode, respectively On the conductive layer, the first package is completed. Next, the light-emitting die unit is electrically disposed on a substrate unit, wherein the upper surface of the substrate unit has at least one positive conductive region and one negative conductive region. The positive electrode conductive pad is electrically connected to the positive electrode conductive region, and the negative electrode conductive pad is electrically connected to the negative electrode conductive region; finally, a package unit is used to cover the light emitting bare cell and a part of the upper surface of the substrate unit .

因此,本發明的有益效果在於:透過二次封裝的方式,使得該發光裸晶單元在運送過程中可以得到完善的保護,因此該發光裸晶單元的良率將大大的提升。Therefore, the beneficial effects of the present invention are that the illuminating bare crystal unit can be perfectly protected during the transportation process by means of the secondary encapsulation, and thus the yield of the illuminating bare crystal unit is greatly improved.

為了能更進一步瞭解本發明為達成預定目的所採取之技術、手段及功效,請參閱以下有關本發明之詳細說明與附圖,相信本發明之目的、特徵與特點,當可由此得一深入且具體之瞭解,然而所附圖式僅提供參考與說明用,並非用來對本發明加以限制者。In order to further understand the technology, the means and the effect of the present invention in order to achieve the intended purpose, refer to the following detailed description of the invention and the accompanying drawings. The detailed description is to be understood as illustrative and not restrictive.

請參閱第二圖、及第二A圖至第二H圖所示,本發明係提供一種採用二次封裝之發光二極體封裝結構的製作方法,其包括下列步驟:Referring to the second figure, and the second A to the second H, the present invention provides a method for fabricating a light emitting diode package structure using a secondary package, which includes the following steps:

步驟S100係為:請配合第二圖及第二A圖所示,首先,提供一發光裸晶單元1,其具有一正極導電層P及一負極導電層N,其中該發光裸晶單元1係具有一發光本體10及一成形於該發光本體10內之發光區域A,並且該正極導電層P係成形於該發光本體10上,該負極導電層N係成形於該發光本體10上。另外,該發光本體10係具有一氧化鋁基板100、一成形於該氧化鋁基板100上之氮化鎵負電極層101、及一成形於該氮化鎵負電極層101上之氮化鎵正電極層102,此外該正極導電層P係成形於該氮化鎵正電極層102上,該負極導電層N係成形於該氮化鎵負電極層101上。Step S100 is: as shown in FIG. 2 and FIG. 2A, firstly, a light-emitting bare crystal unit 1 having a positive conductive layer P and a negative conductive layer N, wherein the light-emitting bare crystal unit 1 is provided The light-emitting body 10 and a light-emitting area A formed in the light-emitting body 10 are formed on the light-emitting body 10, and the negative conductive layer N is formed on the light-emitting body 10. In addition, the illuminating body 10 has an alumina substrate 100, a gallium nitride negative electrode layer 101 formed on the alumina substrate 100, and a gallium nitride formed on the GaN negative electrode layer 101. The electrode layer 102 is further formed on the gallium nitride positive electrode layer 102, and the negative electrode conductive layer N is formed on the gallium nitride negative electrode layer 101.

步驟S102係為:請配合第二圖及第二B圖所示,形成一絕緣材料R於該發光裸晶單元1上。In step S102, an insulating material R is formed on the light-emitting bare crystal unit 1 as shown in the second figure and the second figure B.

步驟S104係為:請配合第二圖及第二C圖所示,移除部分的絕緣材料R,以形成只露出該正極導電層P與該負極導電層N且位於該正極導電層P與該負極導電層N之間之一絕緣單元2。因此,透過上述步驟S102及S104以完成「形成一絕緣單元2於該正極導電層P與該負極導電層N之間」步驟。Step S104 is: please remove part of the insulating material R as shown in the second figure and the second C, so as to expose only the positive conductive layer P and the negative conductive layer N and located on the positive conductive layer P and One of the insulating units 2 between the negative electrode conductive layers N. Therefore, the steps of "forming an insulating unit 2 between the positive conductive layer P and the negative conductive layer N" are completed through the above steps S102 and S104.

步驟S106係為:請配合第二圖及第二D圖所示,形成一導電材料C於該絕緣單元2、該正極導電層P及該負極導電層N上。Step S106 is to form a conductive material C on the insulating unit 2, the positive conductive layer P and the negative conductive layer N as shown in the second figure and the second figure D.

步驟S108係為:請配合第二圖及第二E圖所示,移除部分的導電材料C,以形成彼此絕緣且分別電性連接於該正極導電層P及該負極導電層N之一正極導電焊墊30及一負極導電焊墊31,以完成本發明第一次的封裝。因此,透過上述步驟S106及S108以完成「分別形成一正極導電焊墊30及一負極導電焊墊31於該正極導電層P上及該負極導電層N上」步驟。Step S108 is: as shown in FIG. 2 and FIG. 26E, a portion of the conductive material C is removed to form insulation with each other and electrically connected to the positive conductive layer P and one of the negative conductive layers N, respectively. The conductive pad 30 and a negative conductive pad 31 are used to complete the first package of the present invention. Therefore, the steps of "forming a positive electrode conductive pad 30 and a negative electrode conductive pad 31 on the positive electrode conductive layer P and the negative electrode conductive layer N, respectively" are completed through the above steps S106 and S108.

步驟S100係為:請配合第二圖及第二F圖所示,將該發光裸晶單元1電性設置於一基板單元5上,其中該基板單元5的上表面係至少具有一正極導電區域50及一負極導電區域51,該正極導電焊墊30係透過一導電體60而電性接觸於該正極導電區域50,並且該負極導電焊墊31係透過一導電體61而電性接觸於該負極導電區域51。此外,依據不同的設計需求,每一個導電體(60、61)的上表面面積係佔據該正極導電焊墊30或該負極導電焊墊31的上表面面積之30%~100%,並且言亥正極導電焊墊30的上表面面積係大於該負極導電焊墊31的上表面面積。In step S100, the illuminating die unit 1 is electrically disposed on a substrate unit 5, wherein the upper surface of the substrate unit 5 has at least one positive conductive region. And a negative conductive region 51, the positive conductive pad 30 is electrically connected to the positive conductive region 50 through a conductive body 60, and the negative conductive pad 31 is electrically connected to the conductive member 61. Negative electrode conductive region 51. In addition, according to different design requirements, the upper surface area of each of the electrical conductors (60, 61) occupies 30% to 100% of the upper surface area of the positive conductive pad 30 or the negative conductive pad 31, and The upper surface area of the positive electrode conductive pad 30 is larger than the upper surface area of the negative electrode conductive pad 31.

步驟S112係為:請配合第二圖及第二G圖所示,使用一封裝單元7來覆蓋該發光裸晶單元1及該基板單元5的一部分上表面,並且依據不同的設計需求,該封裝單元7係可為一透明封裝體或一螢光封裝體。Step S112 is to cover the upper surface of the light-emitting bare crystal unit 1 and the substrate unit 5 with a package unit 7 as shown in the second figure and the second G picture, and the package is required according to different design requirements. The unit 7 can be a transparent package or a fluorescent package.

因此,由本發明第二G圖可知,本發明係提供一種採用二次封裝之發光二極體封裝結構,其包括:一發光裸晶單元1、一絕緣單元2、一第一導電單元3、一基板單元5、一第二導電單元6及一封裝單元7。Therefore, the second G diagram of the present invention provides a light emitting diode package structure using a secondary package, comprising: a light emitting die unit 1, an insulating unit 2, a first conductive unit 3, and a light emitting diode package. The substrate unit 5, a second conductive unit 6, and a package unit 7.

其中,該發光裸晶單元1係具有一正極導電層P及一負極導電層N。該絕緣單元2係成形於該正極導電層P與該負極導電層N之間。該第一導電單元3係具有一成形於該正極導電層P上之正極導電焊墊30及一成形於該負極導電層N上之負極導電焊墊31。上述結構即形成第一次封裝單元。The illuminating die unit 1 has a positive conductive layer P and a negative conductive layer N. The insulating unit 2 is formed between the positive electrode conductive layer P and the negative electrode conductive layer N. The first conductive unit 3 has a positive conductive pad 30 formed on the positive conductive layer P and a negative conductive pad 31 formed on the negative conductive layer N. The above structure forms the first package unit.

另外,該基板單元5的上表面係至少具有一正極導電區域50及一負極導電區域51,其中透過該正極導電焊墊30電性接觸於該正極導電區域50及該負極導電焊墊31電性接觸於該負極導電區域51,以使得該發光裸晶單元1電性設置於該基板單元5上。再者,該第二導電單元6係具有兩個導電體(60、61),例如:焊錫或錫膏…等。此兩個導電體(60、61)係分別設置於「該正極導電焊墊30與正極導電區域50之間」及「該負極導電焊墊31與該負極導電區域51之間」,並且每一個導電體(60、61)的上表面面積係佔據該正極導電焊墊30或該負極導電焊墊31的上表面面積之30%~100%,並且該正極導電焊墊30的上表面面積係大於該負極導電焊墊31的上表面面積。In addition, the upper surface of the substrate unit 5 has at least a positive conductive region 50 and a negative conductive region 51, wherein the positive conductive pad 30 is electrically connected to the positive conductive region 50 and the negative conductive pad 31. The negative conductive region 51 is contacted such that the light emitting bare cell 1 is electrically disposed on the substrate unit 5. Furthermore, the second conductive unit 6 has two conductors (60, 61), such as solder or solder paste, and the like. The two conductors (60, 61) are respectively disposed between "the positive conductive pad 30 and the positive conductive region 50" and "between the negative conductive pad 31 and the negative conductive region 51", and each The upper surface area of the electric conductor (60, 61) occupies 30% to 100% of the area of the upper surface of the positive electrode conductive pad 30 or the negative electrode conductive pad 31, and the upper surface area of the positive electrode conductive pad 30 is larger than The upper surface area of the negative electrode conductive pad 31.

此外,該封裝單元7係覆蓋該發光裸晶單元1及該基板單元5的一部分上表面,其中該封裝單元7係可為一透明封裝體或一螢光封裝體。另外,依據不同的設計需求,該螢光封裝體係可「由矽膠與螢光粉所混合形成之螢光膠體」或可「由環氧樹脂與螢光粉所混合形成之螢光膠體」。The package unit 7 is a transparent package or a fluorescent package. In addition, according to different design requirements, the fluorescent package system can be "a fluorescent colloid formed by mixing a silicone rubber and a fluorescent powder" or a fluorescent colloid formed by mixing an epoxy resin and a fluorescent powder.

綜上所述,本發明透過第一次封裝,以製作出該發光裸晶單元1之正極導電焊墊30及負極導電焊墊31,因此本發明不需經過任何的打線過程;然後再透過覆晶的方式將上述經過一次封裝後的發光裸晶單元1電性設置於一基板單元5上,以使得發光裸晶單元1與基板單元5之間產生電性連接;最後再進行第二次封裝(採用該封裝單元7),以完成本發明的製作。In summary, the present invention is used to fabricate the positive conductive pad 30 and the negative conductive pad 31 of the illuminating die unit 1 through the first package. Therefore, the present invention does not need to pass any wire bonding process; The above-mentioned once-encapsulated illuminating die unit 1 is electrically disposed on a substrate unit 5 to electrically connect the illuminating die unit 1 and the substrate unit 5; finally, the second package is performed. (The package unit 7 is employed) to complete the fabrication of the present invention.

惟,本發明之所有範圍應以下述之申請專利範圍為準,凡合於本發明申請專利範圍之精神與其類似變化之實施例,皆應包含於本發明之範疇中,任何熟悉該項技藝者在本發明之領域內,可輕易思及之變化或修飾皆可涵蓋在以下本案之專利範圍。All the scope of the present invention is intended to be included in the scope of the present invention, and all those skilled in the art should be included in the scope of the present invention. Variations or modifications that can be readily conceived within the scope of the invention are encompassed by the scope of the patents herein below.

[習知][知知]

1a...發光裸晶單元1a. . . Illuminated bare cell

Pa...正極導電層Pa. . . Positive conductive layer

Na...負極導電層Na. . . Negative electrode conductive layer

3a...導電單元3a. . . Conductive unit

30a...導線30a. . . wire

5a...基板單元5a. . . Substrate unit

7a...封裝單元7a. . . Package unit

[本發明][this invention]

1...發光裸晶單元1. . . Illuminated bare cell

P...正極導電層P. . . Positive conductive layer

N...負極導電層N. . . Negative electrode conductive layer

10...發光本體10. . . Illuminated body

100...氧化鋁基板100. . . Alumina substrate

101...氮化鎵負電極層101. . . Gallium nitride negative electrode layer

102...氮化鎵正電極層102. . . Gallium nitride positive electrode layer

A...發光區域A. . . Luminous area

R...絕緣材料R. . . Insulation Materials

2...絕緣單元2. . . Insulation unit

C...導電材料C. . . Conductive material

3...第一導電單元3. . . First conductive unit

30...正極導電焊墊30. . . Positive conductive pad

31...負極導電焊墊31. . . Negative electrode conductive pad

5...基板單元5. . . Substrate unit

50...正極導電區域50. . . Positive conductive area

51...負極導電區域51. . . Negative electrode conductive region

6...第二導電單元6. . . Second conductive unit

60...導電體60. . . Electrical conductor

61...導電體61. . . Electrical conductor

7...封裝單元7. . . Package unit

第一圖係為習知採用一次封裝之發光二極體封裝結構之結構示意圖;The first figure is a schematic structural view of a conventional light-emitting diode package structure using a single package;

第二圖係為本發明採用二次封裝之發光二極體封裝結構的製作方法之流程圖;以及The second figure is a flow chart of a method for fabricating a light emitting diode package structure using a secondary package according to the present invention;

第二A圖至第二G圖係分別為本發明採用二次封裝之發光二極體封裝結構的製作方法之製作流程示意圖。2A to 2G are respectively schematic diagrams showing a manufacturing process of a method for fabricating a light emitting diode package structure using a secondary package according to the present invention.

1...發光裸晶單元1. . . Illuminated bare cell

P...正極導電層P. . . Positive conductive layer

N...負極導電層N. . . Negative electrode conductive layer

2...絕緣單元2. . . Insulation unit

3...第一導電單元3. . . First conductive unit

30...正極導電焊墊30. . . Positive conductive pad

31...負極導電焊墊31. . . Negative electrode conductive pad

5...基板單元5. . . Substrate unit

50...正極導電區域50. . . Positive conductive area

51...負極導電區域51. . . Negative electrode conductive region

6...第二導電單元6. . . Second conductive unit

60...導電體60. . . Electrical conductor

61...導電體61. . . Electrical conductor

7...封裝單元7. . . Package unit

Claims (8)

一種發光二極體封裝結構的製作方法,其包括下列步驟:提供一發光裸晶單元,其具有一正極導電層及一負極導電層;形成一絕緣單元於該正極導電層與該負極導電層之間;分別形成一正極導電焊墊及一負極導電焊墊於該正極導電層上及該負極導電層上,以完成第一次的封裝;將該發光裸晶單元電性設置於一基板單元上,其中該基板單元的上表面係至少具有一正極導電區域及一負極導電區域,該正極導電焊墊電性接觸於該正極導電區域,並且該負極導電焊墊電性接觸於該負極導電區域;以及使用一封裝單元來覆蓋該發光裸晶單元及該基板單元的一部分上表面。 A manufacturing method of a light emitting diode package structure, comprising the steps of: providing a light emitting bare crystal unit having a positive conductive layer and a negative conductive layer; forming an insulating unit between the positive conductive layer and the negative conductive layer Forming a positive electrode conductive pad and a negative electrode conductive pad on the positive electrode conductive layer and the negative electrode conductive layer to complete the first package; the light emitting die unit is electrically disposed on a substrate unit The upper surface of the substrate unit has at least one positive conductive region and a negative conductive region, the positive conductive pad electrically contacts the positive conductive region, and the negative conductive pad is electrically contacted to the negative conductive region; And using a package unit to cover the light emitting bare cell and a portion of the upper surface of the substrate unit. 如申請專利範圍第1項所述之發光二極體封裝結構的製作方法,其中上述形成該絕緣單元於該正極導電層與該負極導電層之間的步驟中,更進一步包括:形成一絕緣材料於該發光裸晶單元上;以及移除部分的絕緣材料,以形成上述只露出該正極導電層與該負極導電層且位於該正極導電層與該負極導電層之間之絕緣單元。 The method for fabricating a light-emitting diode package structure according to claim 1, wherein the step of forming the insulating unit between the positive electrode conductive layer and the negative electrode conductive layer further comprises: forming an insulating material And a portion of the insulating material is removed to form an insulating unit that exposes only the positive conductive layer and the negative conductive layer and is located between the positive conductive layer and the negative conductive layer. 如申請專利範圍第1項所述之發光二極體封裝結構的製作方法,其中上述分別形成該正極導電焊墊及該負極導電焊墊於該正極導電層上及該負極導電層上的步驟中,更進一步包括: 形成一導電材料於該絕緣單元上及一部分發光裸晶單元上;以及移除部分的導電材料,以形成上述彼此絕緣且分別電性連接於該正極導電層及該負極導電層之正極導電焊墊及負極導電焊墊。 The method for fabricating a light emitting diode package structure according to claim 1, wherein the step of forming the positive electrode conductive pad and the negative electrode conductive pad on the positive conductive layer and the negative conductive layer respectively , and further includes: Forming a conductive material on the insulating unit and a portion of the light emitting bare cell; and removing a portion of the conductive material to form the positive conductive pads electrically insulated from each other and electrically connected to the positive conductive layer and the negative conductive layer, respectively And negative conductive pads. 如申請專利範圍第1項所述之發光二極體封裝結構的製作方法,其中該封裝單元係為一透明封裝體或一螢光封裝體。 The method of fabricating a light emitting diode package structure according to claim 1, wherein the package unit is a transparent package or a fluorescent package. 如申請專利範圍第4項所述之發光二極體封裝結構的製作方法,其中該螢光封裝體係由矽膠與螢光粉所混合形成之螢光膠體。 The method for fabricating a light emitting diode package structure according to claim 4, wherein the fluorescent package system comprises a phosphor colloid formed by mixing a silicone rubber and a phosphor powder. 如申請專利範圍第4項所述之發光二極體封裝結構的製作方法,其中該螢光封裝體係由環氧樹脂與螢光粉所混合形成之螢光膠體。 The method for fabricating a light emitting diode package structure according to claim 4, wherein the fluorescent package system is a phosphor colloid formed by mixing an epoxy resin and a phosphor powder. 如申請專利範圍第1項所述之發光二極體封裝結構的製作方法,其中該發光裸晶單元係具有一發光本體及一成形於該發光本體內之發光區域,並且該正極導電層與該負極導電層皆成形於該發光本體上。 The method for fabricating a light-emitting diode package according to claim 1, wherein the light-emitting diode unit has a light-emitting body and a light-emitting region formed in the light-emitting body, and the positive conductive layer and the light-emitting layer The negative conductive layers are all formed on the light emitting body. 如申請專利範圍第7項所述之發光二極體封裝結構的製作方法,其中該發光本體係具有一氧化鋁基板、一成形於該氧化鋁基板上之氮化鎵負電極層、及一成形於該氮化鎵負電極層上之氮化鎵正電極層,並且該正極導電層係成形於該氮化鎵正電極層上,該負極導電層係成形於該氮化鎵負電極層上。 The method for fabricating a light emitting diode package structure according to claim 7, wherein the light emitting system has an aluminum oxide substrate, a gallium nitride negative electrode layer formed on the aluminum oxide substrate, and a forming a gallium nitride positive electrode layer on the gallium nitride negative electrode layer, and the positive electrode conductive layer is formed on the gallium nitride positive electrode layer, and the negative electrode conductive layer is formed on the gallium nitride negative electrode layer.
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* Cited by examiner, † Cited by third party
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