TWI408789B - A lead frame, a method of manufacturing the same, and a semiconductor device carrying the lead frame - Google Patents

A lead frame, a method of manufacturing the same, and a semiconductor device carrying the lead frame Download PDF

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TWI408789B
TWI408789B TW96148287A TW96148287A TWI408789B TW I408789 B TWI408789 B TW I408789B TW 96148287 A TW96148287 A TW 96148287A TW 96148287 A TW96148287 A TW 96148287A TW I408789 B TWI408789 B TW I408789B
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Taiwan
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resin
lead
frame
leads
wafer pad
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TW96148287A
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Chinese (zh)
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TW200843072A (en
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Norio Ojima
Akihiro Kubota
Yoshihito Takamatsu
Tomoaki Ishigaki
Masao Sakuma
Emiko Sugimoto
Tatsuya Meguro
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Shiima Electronics Inc
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Publication of TWI408789B publication Critical patent/TWI408789B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49558—Insulating layers on lead frames, e.g. bridging members
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/4805—Shape
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/491—Disposition
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
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    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
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Abstract

[PROBLEMS] To provide a lead frame having improved mechanical strength of an inner lead, a method for manufacturing such lead frame and a semiconductor device having such lead frame mounted thereon. [MEANS FOR SOLVING PROBLEMS] A lead frame is provided with a frame; a die pad support bar extending toward the center from the frame; a die pad fixed to the center of the frame by the die pad support bar; and a plurality of inner leads whose leading end side extends toward the center of the frame from the frame. A rigidity reinforcing section is arranged on the leading end portion of the inner lead. The rigidity reinforcing section is fixed with a resin, at a portion where an interval between the adjacent inner leads is 170µm or less, and the leading end periphery on the frame center side is arranged at a position 1.2mm or less from the leading end periphery of the inner lead, and a resin liquid applied on the rear surface side of the wire bonding surface of the inner lead is firmly fixed in a gap between the adjacent inner leads.

Description

引線框、其製造方法及承載其引線框的半導體裝置Lead frame, method of manufacturing the same, and semiconductor device carrying the same

本發明是關於在被使用在半導體裝置的引線框中，在引線框前端部設置剛性增強部的引線框，該引線框的製造方法及承載該引線框的半導體裝置。The present invention relates to a lead frame provided with a rigidity reinforcing portion at a tip end portion of a lead frame used in a lead frame of a semiconductor device, a method of manufacturing the lead frame, and a semiconductor device carrying the lead frame.

例如第35圖所示地，半導體裝置10是在晶片銲墊11上承載半導體元件20，利用線30接線經鍍銀等的表面處理的內部引線12前端部與半導體元件20的端子21，而以密封用樹脂40進行密封，之後，將外界引線13成形成鵝翼狀者。外界引線13是與外部電路電性地連接者。For example, as shown in FIG. 35, the semiconductor device 10 carries the semiconductor element 20 on the wafer pad 11, and the front end portion of the inner lead 12 and the terminal 21 of the semiconductor element 20 which are surface-treated by silver plating or the like are connected by the wire 30. The sealing resin 40 is sealed, and then the outer lead 13 is formed into a goose-wing. The outer lead 13 is electrically connected to an external circuit.

如第36圖所示地，引線框100是具備：框架，及從該框架朝中心部延設的晶片銲墊支撐桿116，及藉由該晶片銲墊支撐桿116被固定在上述框架的中心部的晶片銲墊111，及前端側從框架朝框架的中心部(在框中心側)所延設的複數內部引線170。晶片銲墊111位於中心部，晶片銲墊111是藉由4支晶片銲墊支撐桿116所支撐。在晶片銲墊111的上下左右的四方向，設有多數內部引線170，而其前端是連接與外部電路連接所用的外界引線113。接近於內部引線170的前端部的部位，貼有固定內部引線170所用的膠帶120。貼有內部引線的膠帶120的前端的部分，與承載於晶片銲墊的半導體元件的端子被引線接合，互相地被連接。第36圖的引線框是以構成單位表示。 實際上，該構成單位被複數連結而被使用。又，內部引線170是起初在以前被連結部互相地連接的狀態，惟前端連結部(未圖示)被切斷分離，成為如第36圖所示的引線圖。As shown in Fig. 36, the lead frame 100 includes a frame, and a wafer pad support rod 116 extending from the frame toward the center portion, and is fixed to the center of the frame by the wafer pad support rod 116. The wafer pad 111 of the portion and the plurality of inner leads 170 extending from the frame toward the center portion of the frame (on the side of the frame center). The wafer pad 111 is located at the center portion, and the wafer pad 111 is supported by the four wafer pad support bars 116. In the four directions of the upper and lower sides of the wafer pad 111, a plurality of inner leads 170 are provided, and the front end thereof is an external lead 113 for connecting to an external circuit. A tape 120 for fixing the inner lead 170 is attached to a portion close to the front end portion of the inner lead 170. The portion of the front end of the tape 120 to which the inner lead is attached is wire-bonded to the terminals of the semiconductor element carried on the wafer pad, and is connected to each other. The lead frame of Fig. 36 is represented by constituent units. In fact, the constituent units are connected by plural numbers and used. In addition, the inner lead wires 170 are initially connected to each other by the connecting portion, and the front end connecting portion (not shown) is cut and separated to form a lead pattern as shown in Fig. 36.

在第37圖，擴大表示內部引線的一部分130。內部引線170的最前端部160是施以鍍銀，為與半導體元件的端子以細線被連接的部分，亦即，施以引線接合法的部分。在內部引線的前端部的框架側，亦即，在第37圖中，在中間部140的框架側貼有膠帶120。此為，內部引線170的最前端部160，為在進行引線接合法之際或在完成引線接合法之後，將引線框移送至後續工程之際，容易振動之故，因而為了防止此而用來固定內部引線者。擬進行引線接合之際，從中間部140作成橫跨膠帶120般地載置引線接合夾具145之故，因而膠帶是配設在從內部引線最前端部160隔著相當距離(一般為從內部引線最前端緣距2~3mm的情形的情形)。In Fig. 37, a portion 130 of the inner lead is enlarged. The foremost end portion 160 of the inner lead 170 is a portion to which silver plating is applied and which is connected to a terminal of the semiconductor element by a thin wire, that is, a portion to which wire bonding is applied. On the frame side of the front end portion of the inner lead, that is, in Fig. 37, the tape 120 is attached to the frame side of the intermediate portion 140. Therefore, the foremost end portion 160 of the inner lead 170 is used to prevent vibration when the lead frame is transferred to a subsequent process after the wire bonding method is completed or after the wire bonding method is completed. Fix the inner lead. When the wire bonding is to be performed, the wire bonding jig 145 is placed across the tape 120 from the intermediate portion 140. Therefore, the tape is disposed at a considerable distance from the innermost end portion 160 (generally from the inner lead). The case where the front end edge is 2 to 3 mm).

引線框100是由鎳－鐵合金等的導電係數高，且機械性強度大的金屬材所構成。為了對應於半導體元件的訊號處理的高速化，高功能化，成為在半導體元件設置多數端子。為了對應於此，增加內部引線，外界引線的支數，而成為採用將內部引線間的節距間隔變窄的手段。為了將內部引線的節距變窄，進行著將內部引線的寬度變細，又，也進行著將內部引線原材料的板厚變薄的情形。The lead frame 100 is made of a metal material having a high electrical conductivity and a high mechanical strength such as a nickel-iron alloy. In order to increase the speed of the signal processing in accordance with the semiconductor element, the function is increased, and a plurality of terminals are provided in the semiconductor element. In order to cope with this, the number of internal leads and the number of external leads is increased, and a means for narrowing the pitch interval between the internal leads is employed. In order to narrow the pitch of the inner lead, the width of the inner lead is made thinner, and the thickness of the inner lead material is also thinned.

半導體裝置的多端子化，是必然地增加內部引線及外 界引線的數，隨著此，把內部引線間的間隔(節距)變窄，內部引線的寬度變細。藉由內部引線間的間隔變窄、內部引線的寬度變細，而惹起內部引線前端部的機械性強度會降低的問題。對於該問題，傳統上，在內部引線的前端部的框架側貼住膠帶來固定內部引線，俾進行著增強機械性強度，惟以該方法有逐漸無法加以對應的情形。The multi-terminalization of semiconductor devices is inevitably increasing internal leads and external As a result, the number of the lead wires is narrowed, and the interval between the inner leads (pitch) is narrowed, and the width of the inner lead is narrowed. The narrowing of the interval between the internal leads and the narrowing of the width of the internal leads cause a problem that the mechanical strength of the leading end portion of the inner lead is lowered. For this problem, conventionally, the tape is attached to the frame side of the front end portion of the inner lead to fix the inner lead, and the mechanical strength is enhanced by the enthalpy, but this method is gradually unable to correspond.

又，隨著半導體元件的高密度化，則發熱量相對性地提高封裝的低熱電阻化或低阻抗化成為必需，使得引線框的材質成為從鎳－鐵合金等移行至銅的趨勢。另一方面，銅製的引線框是在引線接合工程的熱之故，因而其表面受到氧化而有降低與密封樹脂之密接性的趨勢。為了避免該情形，將引線接合溫度設定成較低，同時地給予超音波振動以便強化引線接合面的內部引線與細線之連接。如此地，提高了在引線框的引線接合的利用超音波振動的連接依存性。In addition, as the density of the semiconductor element increases, the amount of heat generation relatively increases the low thermal resistance or the low resistance of the package, and the material of the lead frame tends to migrate from nickel-iron alloy or the like to copper. On the other hand, the lead frame made of copper is hot in the wire bonding process, so that the surface thereof is oxidized and the adhesion to the sealing resin tends to be lowered. In order to avoid this, the wire bonding temperature is set to be low, and ultrasonic vibration is given at the same time to strengthen the connection of the inner lead and the thin wire of the wire bonding face. In this way, the connection dependency by the ultrasonic vibration in the wire bonding of the lead frame is improved.

第38圖是表示引線框的一部分110者，局部地表示有內部引線的前端部。內部引線170的最前端部160是施以鍍銀等，維持著良好的引線接合性。又，在內部引線的前端部的框架側貼有用以固定內部引線的例如聚醯亞胺的膠帶120。引線接合之際，將細線以超音波連接於內部引線的前端部，惟在該時候會產生振動。而該振動也被傳到內部引線。對應於該振動程度而穩定地進行引線接合之故，因而對每一內部引線必須調整設定引線接合條件，例如超音波輸出，惟此為將引線接合工程作成煩雜者。Fig. 38 is a view showing a part 110 of the lead frame, partially showing the front end portion of the inner lead. The foremost end portion 160 of the inner lead 170 is plated with silver or the like to maintain good wire bonding properties. Further, an adhesive tape 120 such as polyimide which is used to fix the inner lead is attached to the frame side of the front end portion of the inner lead. At the time of wire bonding, the thin wire is ultrasonically connected to the front end portion of the inner lead, but vibration is generated at this time. The vibration is also transmitted to the inner leads. Since the wire bonding is stably performed in accordance with the degree of vibration, it is necessary to adjust the wire bonding conditions, for example, the ultrasonic output, for each of the inner leads, but the wire bonding process is troublesome.

又，若以膠帶固定內部引線的最前端部，則在內部引線的最前端無法施以引線接合之故，因而成為在以膠帶固定內部引線的位置的更接近框架側的位置施以引線接合，使得細線長度必然地變長，而有容易產生細線擺動，且有成本變高的問題。Further, when the foremost end portion of the inner lead is fixed by a tape, wire bonding is not possible at the foremost end of the inner lead, and thus wire bonding is performed at a position closer to the frame side at a position where the inner lead is fixed by the tape. The length of the thin wire is inevitably lengthened, and there is a problem that the fine wire wobble is easily generated and the cost becomes high.

若增加內部引線的支數，則引線接合所需的細線支數變多之故，因而容易產生引線接合所致的細線與鄰接的引線的短路問題。半導體裝置是進行密封樹脂之際，樹脂是從引線框的一隅被注入，逐漸擴展到整體。這時候，容易產生受到樹脂流動而細線被推動的細線擺動的問題。內部引線間的間隔變窄，而且細線的支數多時，成為受到樹脂推動的細線與鄰接的引線接觸所致的短路的原因。When the number of leads of the internal leads is increased, the number of thin wires required for wire bonding is increased, so that the problem of short-circuiting between the thin wires and the adjacent leads due to wire bonding is liable to occur. In the semiconductor device, when the sealing resin is applied, the resin is injected from one turn of the lead frame and gradually spreads to the whole. At this time, it is easy to cause a problem that the fine wire is swung by the flow of the resin and the fine wire is pushed. When the interval between the internal leads is narrowed, and the number of the thin wires is large, the short circuit due to the contact between the thin wires driven by the resin and the adjacent leads is caused.

為了固定內部引線而使用膠帶時，該膠帶是配合於引線框的形狀藉由沖孔所製造。結果，膠帶材料被沖孔之後所剩下的材料，作為新的膠帶無法得到所需尺寸，而沖孔所剩下是成為廢料。此為成為引線框的成本提高的原因，反正，引線框的剛性低，對引線接合的穩定化，均勻化等有很大影響。When the tape is used to fix the inner lead, the tape is manufactured by punching in accordance with the shape of the lead frame. As a result, the material remaining after the tape material is punched, as a new tape, cannot be obtained in the required size, and the remaining of the punching is waste. This is a cause of an increase in the cost of the lead frame. In any case, the rigidity of the lead frame is low, and the wire bonding is stabilized and uniformized.

代替以膠帶固定內部引線的前端部的方法，有以樹脂固定的方法。例如在日本特開平4－170058(專利文獻1)，記載著將引線框的上面以外填補在絕緣體中，在日本特開平2－69966(專利文獻2)，記載著將紫外線硬化樹脂填補在前端部的引線框的間隔，而在日本特開平5－315533(專利文獻3)，記載著藉由絲網印刷在引線框間配置與 引線框相同厚度的絕緣性樹脂，在日本特開平5－267553(專利文獻4)，記載著將規定楊氏係數的樹脂填補在引線框的前端部的引線間，在日本特開平8－139266(專利文獻5)，記載著將樹脂填補在內部引線的引線接合面的背面，在日本特開平10－116957(專利文獻6)，記載著將樹脂填充於經薄壁化的內部引線前端，又，在日本特開平7－99281號公報(專利文獻7)記載著將紫外線硬化樹脂填充於引線間。不是將樹脂塗佈在內部引線間或內部引線與晶片銲墊支撐桿之間隙，惟將接著劑塗佈於內部引線前端部的背面及半導體晶片承載領域，以提高引線與半導體晶片的接著性的情形，被記載於日本特開平10－70230(專利文獻8)。Instead of fixing the front end portion of the inner lead with tape, there is a method of fixing with a resin. For example, JP-A No. 4-17058 (Patent Document 1) discloses that the upper surface of the lead frame is filled in the insulator, and JP-A-2-69966 (Patent Document 2) discloses that the ultraviolet curable resin is filled in the tip end portion. The gap between the lead frames is described in Japanese Laid-Open Patent Publication No. Hei 5-315533 (Patent Document 3). Japanese Patent Laid-Open No. Hei 5-267553 (Patent Document 4) discloses that a resin having a predetermined Young's modulus is filled between the leads of the tip end portion of the lead frame, and is disclosed in Japanese Patent Laid-Open No. Hei 8-139266 ( Japanese Patent Laid-Open No. Hei 10-116957 (Patent Document 6) discloses that the resin is filled in the thinned inner lead end, and the resin is filled in the back surface of the inner lead wire. Japanese Patent Publication No. 7-99281 (Patent Document 7) discloses that an ultraviolet curable resin is filled between leads. Instead of coating the resin between the inner leads or between the inner leads and the wafer pad support bars, the adhesive is applied to the back side of the inner lead front end and the semiconductor wafer carrying area to improve the adhesion of the leads to the semiconductor wafer. In the case of Japanese Patent Laid-Open No. 10-70230 (Patent Document 8).

〔專利文獻1］日本特開平4－170058號公報 〔專利文獻2］日本特開平2－69966號公報 〔專利文獻3］日本特開平5－315533號公報 〔專利文獻4］日本特開平5－267553號公報 〔專利文獻5］日本特開平8－139266號公報 〔專利文獻6］日本特開平10－116957號公報 〔專利文獻7］日本特開平7－99281號公報 〔專利文獻8］日本特開平10－70230號公報[Patent Document 1] Japanese Patent Laid-Open No. 4-170058 [Patent Document 2] Japanese Patent Laid-Open No. 2-69966 [Patent Document 3] Japanese Patent Laid-Open No. Hei 5-315533 [Patent Document 4] Japanese Patent Laid-Open No. Hei 5-267553 [Patent Document 5] Japanese Patent Laid-Open No. Hei 8-139266 [Patent Document 6] Japanese Patent Laid-Open No. Hei 10-116957 [Patent Document 7] Japanese Patent Laid-Open No. Hei 7-99281 [Patent Document 8] Japanese Patent Laid-Open No. Hei 10-70230

作為將樹脂配置於內部引線間的間隙或內部引線與晶片銲墊支撐桿之間的間隙的方法，眾知有藉由絲網印刷施以塗佈的方法(專利文獻3)。藉由壓入或填補的方法(專利文獻1，2，4，5，6)，藉由噴嘴噴射的方法(專利 文獻7)等。藉由壓入或填補的方法，是需要樹脂的壓入或填補所用的大規模的裝置，除了具有樹脂配置位置的定位困難，壓入或填補的樹脂量的管理困難的問題之外，還有填補的樹脂的面的平滑性不均勻，而進行引線接合之際，則有引線框的加熱成為不充分的問題。藉由絲網印刷進行塗佈樹脂的方法，是在網目阻塞或洗滌等的管理上費工夫，而有樹脂液從網目滲出使得樹脂塗佈到不需要的部分等的問題。藉由噴嘴噴射的方法，是噴嘴噴射一次所需要的時間本體是短，惟欲將樹脂噴嘴噴射於多數內部引線間的間隙，需要很多時間，而有生產性反而降低的問題。記載於專利文獻8的將樹脂藉由散佈進行塗佈的方法，是有會受到樹脂液的黏度及內部引線間的間隔等的影響的問題。As a method of disposing a resin in a gap between internal leads or a gap between an internal lead and a wafer pad support rod, a method of applying by screen printing is known (Patent Document 3). Method of injecting by nozzle (patent document 1, 2, 4, 5, 6) by means of press-in or filling (patent Literature 7) and so on. The method of press-fitting or filling is a large-scale apparatus which requires press-fitting or filling of a resin, and in addition to the difficulty in the positioning of the resin arrangement position, the management of the amount of resin to be pressed or filled is difficult. The smoothness of the surface of the filled resin is not uniform, and when wire bonding is performed, heating of the lead frame is insufficient. The method of coating the resin by screen printing is laborious in the management of mesh clogging or washing, and there is a problem that the resin liquid bleeds out from the mesh to apply the resin to an unnecessary portion. In the nozzle jet method, the time required for the nozzle to be ejected once is short, and it is necessary to spray the resin nozzle into the gap between the plurality of inner leads, which requires a lot of time and has a problem of reduced productivity. The method of applying the resin by dispersion in Patent Document 8 has a problem that it is affected by the viscosity of the resin liquid and the interval between the internal leads.

作為將樹脂配置在內部引線間的間隙的方法，藉由散佈的方法為簡單又容易使用的方法，惟先前所述的專利文獻8的方法，是將接著劑藉由散佈塗佈於內部引線的背面及半導體晶片承載領域周邊，以提昇半導體晶片與引線框的接著性者，而與本案發明的目的，課題等不相同者。As a method of disposing the resin in the gap between the internal leads, the method of spreading is a simple and easy-to-use method, but the method of Patent Document 8 described above is to apply the adhesive to the inner lead by spreading. The back surface and the periphery of the semiconductor wafer carrier area are used to improve the adhesion between the semiconductor wafer and the lead frame, and are different from the object, the problem, and the like of the present invention.

本發明是在此種狀況下所創作者，依據增加半導體裝置的端子而增加內部引線的針腳數，寬度的細化，對應於內部引線間的窄節距化，為了保持內部引線的機械性強度，提昇內部引線前端部的剛性，以使在引線接合時不會使 內部引線振動，或在引線接合後將引線框移送到後續工程之際產生振動而不會成為短路的原因，或是防止利用細線擺動的細線與鄰接的引線的接觸所致的短路，提供不必一一設定調整引線接合時的接合條件，具備高剛性的內部引線的引線框者，又，提供沒有上述問題點或是較少上述問題點的引線框的製造方法者，又，提供承載該引線框的半導體裝置者。The present invention is intended to increase the number of pins of the inner lead, the refinement of the width, and the narrow pitch between the inner leads in order to maintain the mechanical strength of the inner lead in accordance with the increase in the number of terminals of the semiconductor device. Increase the rigidity of the front end of the inner lead so that it does not make the wire when it is joined The internal lead is vibrated, or the lead frame is moved to the subsequent work after the wire bonding to generate vibration without causing a short circuit, or the short circuit caused by the contact of the thin wire which is swung by the thin wire with the adjacent lead wire is provided. A lead frame having a high rigidity internal lead is provided for adjusting a bonding condition at the time of wire bonding, and a lead frame manufacturing method having no such problem or less problem is provided, and a lead frame is provided. Semiconductor device.

本發明的要旨，是在內部引線的數較多的引線框中，在內部引線的前端部設置剛性增強部，以便提昇內部引線的剛性。該剛性增強部是以樹脂來固定內部引線者。本發明是提供提昇該剛性的引線框，製造該引線框的方法及承載該引線框的半導體裝置。The gist of the present invention is to provide a rigidity reinforcing portion at the front end portion of the inner lead in a lead frame having a large number of inner leads so as to increase the rigidity of the inner lead. The rigidity reinforcing portion is a resin that fixes the inner lead. The present invention provides a lead frame for improving the rigidity, a method of manufacturing the lead frame, and a semiconductor device carrying the lead frame.

將本發明的要旨，以分條寫地表示於如下。The gist of the present invention is expressed in stripes as follows.

(1)一種引線框，具備：框架，及從該框架朝中心部延設的晶片銲墊支撐桿，及藉由該晶片銲墊支撐桿被固定在上述框架的中心部的晶片銲墊，及前端側從框架朝框架的中心部(在框中心側)所延設的複數內部引線，至少在上述內部引線的前端部設有剛性增強部的引線框，其特徵為：上述剛性增強部是以樹脂所固定者，鄰接的上述內部引線間的間隔為170 μm以下的部位，且該框架中心側的前端緣被配置在從內部引線的最前端緣距1.2mm以下的位置，將被塗佈於上述內部引線的引線接合面的背面側的樹脂液，至少固裝於鄰接的內部引線間的間隙者。(1) A lead frame comprising: a frame; and a wafer pad support rod extending from the frame toward the center portion; and a wafer pad fixed to a central portion of the frame by the wafer pad support rod, and a plurality of inner leads extending from the frame toward the center of the frame (on the center of the frame), and a lead frame having a rigidity reinforcing portion at least at a front end portion of the inner lead, wherein the rigidity enhancing portion is When the resin is fixed, the space between the adjacent inner leads is 170 μm or less, and the front end edge of the frame center side is placed at a position of 1.2 mm or less from the foremost edge of the inner lead, and is applied to the resin. The resin liquid on the back side of the wire bonding surface of the inner lead is at least fixed to a gap between adjacent inner leads.

(2)(1)所述的引線框，其中，上述剛性增強部的框架中心側的前端緣位於從內部的引線的最前端緣距0.1mm以上1.2mm以下的位置。(2) The lead frame according to the above aspect, wherein a front end edge of the rigidity reinforcing portion on the center side of the frame is located at a position from a front end edge of the inner lead wire to a distance of 0.1 mm or more and 1.2 mm or less.

(3)(1)或(2)所述的引線框，其中，剛性增強部位的內部引線間的間隔與內部引線與晶片銲墊支撐桿之間的間隔為相同。(3) The lead frame according to (1) or (2), wherein the interval between the inner leads of the rigidity-enhancing portion is the same as the interval between the inner lead and the wafer pad support rod.

(4)(1)或(2)所述的引線框，其中，在剛性增強部位，對上述晶片銲墊支撐桿設置開縫狀開口部。(4) The lead frame according to (1) or (2), wherein a slit-shaped opening portion is provided to the wafer pad support bar at the rigidity-enhancing portion.

(5)(1)或(2)所述的引線框，其中，剛性增強部位的內部引線與晶片銲墊支撐桿之間的間隔對於內部引線間的間隔的比率超過1.14，且位於內部引線與晶片銲墊支撐桿之間的剛性增強部的框架中心側的前端緣位置比位於內部引線間的剛性增強部的框架側的前端緣位置還0.5mm以上位在框架側的位置。(5) The lead frame according to (1) or (2), wherein a ratio of an interval between the inner lead of the rigidity-enhancing portion and the wafer pad support bar to the interval between the inner leads exceeds 1.14, and is located at the inner lead and The position of the front end edge of the center side of the frame of the rigidity reinforcing portion between the wafer pad support bars is more than 0.5 mm at the position of the frame side on the frame side of the rigidity reinforcing portion between the inner leads.

(6)(1)或(2)所述的引線框，其中，剛性增強部位的內部引線與晶片銲墊支撐桿之間的間隔對於內部引線間的間隔的比率超過1.14，內部引線與晶片銲墊支撐桿之間的間隔超過170 μm，且僅在內部引線間設有剛性增強部。(6) The lead frame according to (1) or (2), wherein a ratio of an interval between the inner lead of the rigidity-enhancing portion and the wafer pad support bar to the interval between the inner leads exceeds 1.14, and the inner lead is soldered to the wafer. The spacing between the pad support bars exceeds 170 μm, and only the rigidity reinforcement is provided between the inner leads.

(7)(1)至(6)中任一所述的引線框，其中，在上述剛性增強部中所固定的樹脂，為環氧樹脂及潛在性硬化劑所構成的一液型熱硬化性樹脂。(7) The lead frame according to any one of (1), wherein the resin fixed in the rigidity reinforcing portion is a one-pack type thermosetting property composed of an epoxy resin and a latent curing agent. Resin.

(8)一種半導體裝置，其特徵為：承載固定有(1)至(7)中任一所述的內部引線前端部的引線框。(8) A semiconductor device characterized by carrying a lead frame to which the leading end portion of the inner lead according to any one of (1) to (7) is fixed.

(9)一種引線框的製造方法，具備：框架，及從該框架朝中心部延設的晶片銲墊支撐桿，及藉由該晶片銲墊支撐桿被固定在上述框架的中心部的晶片銲墊，及前端側從框架朝框架的中心部(在框中心側)所延設的複數內部引線，至少在上述內部引線的前端部設有剛性增強部的引線框，其特徵為：在鄰接的上述內部引線間的間隔為170 μm以下的部位，將至少塗佈時的黏度為9.4Pa．s以上54Pa．s以下的樹脂液，或是，在鄰接的上述內部引線間的間隔為160 μm以下的部位，將至少塗佈時的黏度為4Pa．s以上54Pa．s以下的樹脂液，藉由螺旋式散佈法塗佈在引線接合面的背面，而將利用表面張力所塗佈的樹脂液流動在上述內部引線間的間隙或上述內部引線間的間隙及內部引線與晶片銲墊支撐桿之間的間隙，然後藉由加熱來固裝樹脂而在內部引線的前端部形成剛性增強部，而切斷分離內部引線的前端連結部，以便上述剛性增強部的框架中心側前端緣的位置位於從內部引線的最前端緣距1.2mm以下的位置。(9) A method of manufacturing a lead frame, comprising: a frame; and a wafer pad support rod extending from the frame toward the center portion, and wafer bonding fixed to a center portion of the frame by the wafer pad support rod a pad, and a plurality of inner leads extending from the frame toward the center portion of the frame (on the center of the frame), and a lead frame having a rigidity reinforcing portion at least at a front end portion of the inner lead, characterized in that: The space between the inner leads is 170 μm or less, and the viscosity at the time of coating is at least 9.4 Pa. s above 54Pa. The resin liquid below s or the portion where the interval between the adjacent inner leads is 160 μm or less, the viscosity at the time of coating is at least 4 Pa. s above 54Pa. The resin liquid below s is applied to the back surface of the wire bonding surface by a spiral dispersion method, and the resin liquid applied by the surface tension flows in the gap between the internal leads or the gap between the internal leads and the internal leads a gap with the wafer pad support rod, and then fixing the resin by heating to form a rigidity reinforcing portion at the front end portion of the inner lead, and cutting off the front end connecting portion of the separated inner lead so as to be the center of the frame of the rigidity reinforcing portion The position of the side front edge is located at a position which is less than 1.2 mm from the foremost edge of the inner lead.

(10)(9)所述的引線框的製造方法，其中，將切斷分離上述內部引線的前端連結部的位置，作成位於從上述內部引線的最前端緣距0.1mm以上1.2mm以下的位置。(10) The method of manufacturing the lead frame according to the above aspect, wherein the position of the distal end connecting portion of the inner lead is cut and separated, and the position is from 0.1 mm to 1.2 mm from the foremost edge of the inner lead. .

(11)(9)或(10)所述的引線框的製造方法，其中，將剛性增強部位的內部引線與晶片銲墊支撐桿之間的間隔及內部引線間的間隔作成相同。(11) The method of manufacturing a lead frame according to (9), wherein the interval between the inner lead of the rigidity-enhancing portion and the wafer pad support rod and the interval between the inner leads are the same.

(12)(9)或(10)所述的引線框的製造方法，其中，在剛性增強部位中，在上述晶片銲墊支撐桿設於開縫狀的開口部。(12) The method of manufacturing a lead frame according to the above aspect, wherein the wafer pad support rod is provided in the slit-shaped opening portion in the rigidity-enhancing portion.

(13)(9)或(10)所述的引線框的製造方法，其中，剛性增強部位的內部引線與晶片銲墊支撐桿之間的間隔對於內部引線間的間隔的比率超過1.14，且位於內部引線與晶片銲墊支撐桿之間的剛性增強部的框架中心側的前端緣位置比位於內部引線間的剛性增強部的框架側的前端緣位置還0.5mm以上位在框架側的位置。(13) The method of manufacturing the lead frame according to (9), wherein the ratio of the interval between the inner lead of the rigidity-enhancing portion and the wafer pad support bar to the interval between the inner leads exceeds 1.14, and is located The position of the front end edge of the center side of the frame of the rigidity reinforcing portion between the inner lead and the wafer pad support rod is more than 0.5 mm at the position of the frame side on the frame side of the rigidity reinforcing portion between the inner leads.

(14)(9)或(10)所述的引線框的製造方法，其中，剛性增強部位的內部引線與晶片銲墊支撐桿之間的間隔作為超過170 μm者，而將樹脂液僅塗佈於內部引線間的間隙。(14) The method of manufacturing the lead frame according to the above aspect, wherein the interval between the inner lead of the rigidity-enhancing portion and the wafer pad support rod is more than 170 μm, and the resin liquid is coated only The gap between the internal leads.

(15)(9)至(14)中任一所述的引線框的製造方法，其中，作為上述剛性增強部所固定的樹脂，使用環氧樹脂及潛在性硬化劑所構成的一液型熱硬化性樹脂。The method of manufacturing a lead frame according to any one of the aspects of the present invention, wherein the resin to be fixed by the rigidity reinforcing portion is a liquid type heat composed of an epoxy resin and a latent curing agent. Curable resin.

在此，將本案發明的語言的意思搞清楚。首先，內部引線間的間隔及內部引線與晶片銲墊支撐桿之間的間隔，是指被配置於剛性增強部的內部引線間的間隙的中間點的內部引線間的間隔及內部引線與晶片銲墊支撐桿之間的間隔的意思。內部引線間的間隔及內部引線與晶片銲墊支撐桿之間的間隔，是隨著從內部引線的前端部朝外界引線方向愈變大。因此，必須搞清楚那一部位的間隔。由此觀點上，如上述地決定間隔的基準。又，間隔是指施以引線接 合的面的間隔。引線框是使用蝕刻，金屬模的壓機等以形成圖案。尤其是，以蝕刻形成圖案時，內部引線的斷面形狀是成為台形狀。此種情形，在引線框的表面與背面，間隔成為不相同之故，因而作成施以引線接合的面的間隔者。同樣地，內部引線的寬度也指施以引線接合的面的寬度。Here, the meaning of the language of the invention of the present invention is clarified. First, the interval between the inner leads and the interval between the inner leads and the wafer pad support bars refer to the spacing between the inner leads and the inner leads and the wafer soldering at the intermediate points of the gaps between the inner leads of the rigid reinforcing portions. The meaning of the spacing between the pad support bars. The spacing between the inner leads and the spacing between the inner leads and the wafer pad support bars become larger as the direction from the front end of the inner leads toward the outer leads. Therefore, it is necessary to figure out the interval between that part. From this point of view, the criterion of the interval is determined as described above. Also, the interval means that the wire is connected The spacing of the faces. The lead frame is formed by etching using a stamper of a metal mold or the like. In particular, when the pattern is formed by etching, the cross-sectional shape of the inner lead is a table shape. In this case, since the interval between the front surface and the back surface of the lead frame is different, a spacer for the surface to which the wire bonding is applied is formed. Likewise, the width of the inner leads also refers to the width of the face to which the wire bonds are applied.

剛性增強部，是以樹脂被固定者，將被塗佈於內部引線的引線接合面的背面側的樹脂液，固裝於鄰接的內部引線間的間隙者。剛性增強部是至少設在各內部引線間的間隙。又，在內部引線與晶片銲墊支撐桿之間的間隙也可設置。若內部引線與晶片銲墊支撐桿之間的間隔超過170 μm時，則實質上無法將樹脂藉由塗佈於內部引線與晶片銲墊支撐桿之間的間隙使之固裝之故，因而無法設置剛性增強部。又，剛性增強部位是指在引線框設有包括內部引線及晶片銲墊支撐桿的部位。有關於內部引線與晶片銲墊支撐桿之間的間隙，在未設有剛性增強部的情形〔第2(B)圖，第5圖］，設置於與設於內部引線間的間隙的剛性增強部同樣位置的情形〔第2(A)圖，第4圖］，設於比設於內部引線間的間隙的剛性增強部的位置還靠近框架側的情形〔第2(C)圖，第3圖］，惟任何情形，都是指在包括內部引線及晶片銲墊支撐桿的至少內部引線間的間隙，設有剛性增強部的引線框的部位。In the rigidity-enhancing portion, the resin liquid to be applied to the back surface side of the wire bonding surface of the inner lead is fixed to the gap between the adjacent inner leads. The rigidity reinforcing portion is a gap provided at least between the inner leads. Further, a gap between the inner lead and the wafer pad support bar may be provided. If the distance between the inner lead and the wafer pad support rod exceeds 170 μm, the resin cannot be substantially fixed by applying a gap between the inner lead and the wafer pad support rod, and thus cannot be fixed. Set the rigidity enhancement. Further, the rigidity-enhancing portion means a portion where the lead frame is provided with an inner lead and a wafer pad support rod. Regarding the gap between the inner lead and the wafer pad support bar, in the case where the rigidity reinforcing portion is not provided [Fig. 2(B), Fig. 5], the rigidity is set to be increased in the gap provided between the inner leads. In the case of the same position (Fig. 2(A), Fig. 4), the position is closer to the frame side than the position of the rigidity reinforcing portion provided in the gap between the inner leads (second (C), third) Figure], in any case, refers to the portion of the lead frame provided with the rigid reinforcement portion at the gap between at least the inner leads including the inner leads and the wafer pad support bars.

還有，框架中心側的位置，是指配置有晶片銲墊的引線框的中心方向，而框架側是指框架方向，為指與配置有 晶片銲墊的中心側相反的外側。剛性增強部的框架中心側或框架側的前端緣，是指剛性增強部的樹脂的框架中心側或框架側的前端緣。以尺寸作為問題時，在配置於內部引線間的間隙，內部引線與晶片銲墊支撐桿之間的間隙的剛性增強部的樹脂有彎月面時，則以該彎月面的底位置作為尺寸測定的基準(第9、16、27、29圖等)。Further, the position on the center side of the frame refers to the center direction of the lead frame in which the wafer pads are disposed, and the frame side refers to the frame direction, which is referred to as The opposite side of the center side of the wafer pad. The frame center side of the rigidity reinforcing portion or the front end edge of the frame side refers to the frame center side of the resin of the rigidity reinforcing portion or the front end edge of the frame side. When the size is a problem, when the resin disposed in the gap between the inner leads and the rigidity reinforcing portion of the gap between the inner lead and the wafer pad support bar has a meniscus, the bottom position of the meniscus is taken as the size. The basis of the measurement (Figs. 9, 16, 27, 29, etc.).

以下，說明完成本發明為止的經緯。本發明的基本上是一種引線框，具備：框架，及從該框架朝中心部延設的晶片銲墊支撐桿，及藉由該晶片銲墊支撐桿被固定在上述框架的中心部的晶片銲墊，及前端側從框架朝框架的中心部所延設的複數內部引線，在上述內部引線的前端部設有剛性增強部的引線框，其特徵為：上述剛性增強部是以樹脂所固定者，鄰接的上述內部引線間的間隔為170 μm以下的部位，且該框架中心側的前端緣被配置在從內部引線的最前端緣距1.2mm以下的位置，將被塗佈於上述內部引線的引線接合面的背面側的樹脂液，固裝於上述鄰接的內部引線間的間隙者。如上所述地，傳統上，將樹脂配置於內部引線的前端部以謀求內部引線的固定化是被記載在專利文獻，惟在現實的生產現場，將內部引線的前端部以樹脂予以固定化的技術，是未被實施為實情。本發明是將內部引線的前端部以樹脂予以固定化的技術，在現實的生產現場上開拓了實用化的方法者。習知的引線框是內部引線間的間隔或內部引線與晶片銲墊支撐桿之間的間隔為依廠商有所不同，此為成為原因之一而可妨礙該技術的實用化 。Hereinafter, the warp and weft until the completion of the present invention will be described. The present invention basically relates to a lead frame comprising: a frame, and a wafer pad support rod extending from the frame toward the center portion, and wafer bonding fixed to the center portion of the frame by the wafer pad support rod a pad and a plurality of inner leads extending from the frame toward the center of the frame at the front end side, and a lead frame having a rigidity reinforcing portion at a front end portion of the inner lead, wherein the rigidity reinforcing portion is fixed by a resin The space between the adjacent inner leads is 170 μm or less, and the front end edge of the frame center side is disposed at a position of 1.2 mm or less from the foremost edge of the inner lead, and is applied to the inner lead. The resin liquid on the back side of the wire bonding surface is fixed to a gap between the adjacent inner leads. As described above, conventionally, the resin is disposed at the tip end portion of the inner lead to fix the inner lead, which is described in the patent document. However, at the actual production site, the tip end portion of the inner lead is fixed by resin. Technology is not implemented as a reality. The present invention is a technique in which a front end portion of an inner lead is fixed by a resin, and a practical method is developed in a practical production site. The conventional lead frame is such that the spacing between the internal leads or the spacing between the inner leads and the wafer pad support bars is different depending on the manufacturer, which is one of the causes and can hinder the practical use of the technology. .

如上所述地，將樹脂配置內部引線的方法，是眾知有藉由絲網印刷的方法，藉由壓入或填補的方法、藉由噴嘴噴射的方法、藉由散佈的方法，具有簡便又高生產性的特徵。如先前所述地，藉由該散佈方法欲將樹脂配置於內部引線的先端部時，內部引線間的間隔或內部引線與晶片銲墊支撐桿之間的間隔為依廠商有所不同之故，因而有無法確實地配置樹脂的問題。亦即，在某一內部引線間的間隙有配置，惟在其他的內部引線間的間隙或內部引線與晶片銲墊支撐桿之間的間隙未滯留有樹脂，而無法均勻地將樹脂配置在內部引線全面。依據此種現象，本案發明人等，專心研究藉由散佈將樹脂塗佈於內部引線的前端部，使之固裝，藉由此在內部引線前端部設置剛性增強部的引線框。在藉由散佈的樹脂的塗佈中，考量不僅樹脂液(樹脂本身為包括液狀者及溶液狀者)的黏度，還有內部引線間的間隔大小為重要原因，而研究了此些的因果關係而完成本案發明者。As described above, the method of arranging the inner leads of the resin is known to be simple and easy by means of screen printing, by means of press-fitting or filling, by means of nozzle spraying, by means of scattering. Highly productive features. As described above, when the scattering method is to dispose the resin at the tip end portion of the inner lead, the interval between the inner leads or the interval between the inner lead and the wafer pad support rod is different depending on the manufacturer. Therefore, there is a problem that the resin cannot be reliably disposed. That is, the gap between the inner leads is arranged, but the gap between the other inner leads or the gap between the inner leads and the wafer pad support bar does not retain the resin, and the resin cannot be uniformly disposed inside. The leads are comprehensive. In accordance with such a phenomenon, the inventors of the present invention concentrated on the application of a resin to the tip end portion of the inner lead by spreading, and fixing the lead frame to the front end portion of the inner lead. In the coating of the dispersed resin, it is considered that not only the viscosity of the resin liquid (the resin itself is a liquid or a solution) but also the interval between the internal leads is an important reason, and the cause and effect of these are studied. The inventor of the case was completed.

如以後所詳述地，藉由散佈方法，當將樹脂液塗佈於內部引線的前端部，如第1圖所示地，塗佈於內部引線表面上的樹脂液，是藉由表面張力延展於內部引線間的間隙。將延展於內部引線間的間隙的樹脂液，例如藉由熱硬化，可得到樹脂固定內部引線的前端部的引線框。然而，變更內部引線的間隔來塗佈樹脂液時，若內部引線間的間隔變大，則被塗佈在內部引線間的間隙的樹脂液，是分離在 互相鄰接的內部引線上，無法將樹脂配置在內部引線間的間隙。如第31圖所示地，在間隔為160 μm以下的內部引線，藉由塗佈著塗佈時的黏度為4Pa．s以上的樹脂液，可將樹脂配置於內部引線前端部。又，在間隔為170 μm以下的內部引線，藉由塗佈著塗佈時的黏度為9.4Pa．s以上的樹脂液，可將樹脂配置於內部引線前端部。As will be described in detail later, when the resin liquid is applied to the front end portion of the inner lead by the spreading method, as shown in Fig. 1, the resin liquid applied to the inner lead surface is extended by the surface tension. The gap between the internal leads. The resin liquid which is extended in the gap between the internal leads is thermally cured, for example, to obtain a lead frame in which the resin is fixed to the front end portion of the inner lead. However, when the resin liquid is applied by changing the interval between the inner leads, if the interval between the inner leads becomes large, the resin liquid applied to the gap between the inner leads is separated. On the inner leads adjacent to each other, the resin cannot be placed in the gap between the inner leads. As shown in Fig. 31, the internal lead at intervals of 160 μm or less is coated with a viscosity of 4 Pa. For the resin liquid of s or more, the resin can be disposed at the front end portion of the inner lead. Moreover, the internal lead at intervals of 170 μm or less was coated with a viscosity of 9.4 Pa. For the resin liquid of s or more, the resin can be disposed at the front end portion of the inner lead.

在通常的引線框中，內部引線間的間隔與晶片銲墊支撐桿之間的間隔是不相同，後者比前者變成還大。將此放在心上，準備內部引線與晶片銲墊支撐桿之間的間隔為與內部引線的間隔不相同的引線框，進行樹脂液的塗佈，則如表1，表2所示地，在引線間的間隔的比率(內部引線與晶片銲墊支撐桿之間的間隔對於內部引線間的間隔的比率)為1.14以下，則以所謂一筆書寫的要領以樹脂液塗佈晶片銲墊支撐桿的周圍時，可將樹脂均勻地配置於內部引線間全體，惟當引線間的間隔比率超過1.14，則無法將樹脂配置在內部引線與晶片銲墊支撐桿之間的間隙，又，在樹脂液的黏度為至少4Pa．s以上，與樹脂液的黏度無關，引線間的間隔的比率為1.14以下，則可將樹脂液配置在內部引線間的間隙及內部引線與晶片銲墊支撐桿之間的間隙。亦即，內部引線間的間隔(包含內部引線間的間隔，內部引線與晶片銲墊支撐桿間的間隔)為170 μm以下，樹脂液的黏度9.4Pa．s以上，或是引線間隔160 μm以下，樹脂液黏度4Pa．s以上，且引線間的間隔的比率為1.14以下，則可將樹脂液配置在內部引線間的間隙及 內部引線與晶片銲墊支撐桿之間的間隙，而且，該情形，以一筆書寫的要領，可將樹脂一口氣地塗佈包含內部引線間的間隙及內部引線與晶片銲墊支撐桿之間的間隙。In a typical lead frame, the spacing between the inner leads is different from the spacing between the wafer pad support bars, which is larger than the former. Put this in mind, prepare the lead frame with the spacing between the inner lead and the wafer pad support bar to be different from the inner lead, and apply the resin liquid. As shown in Table 1 and Table 2, The ratio of the spacing between the leads (the ratio of the interval between the inner lead and the wafer pad support bar to the interval between the inner leads) is 1.14 or less, and the wafer pad support bar is coated with the resin liquid in a so-called one-stroke manner. When it is around, the resin can be uniformly disposed between the inner leads, but when the interval ratio between the leads exceeds 1.14, the resin cannot be disposed in the gap between the inner lead and the wafer pad support rod, and in the resin liquid. The viscosity is at least 4Pa. s or more, regardless of the viscosity of the resin liquid, the ratio of the interval between the leads is 1.14 or less, and the resin liquid can be disposed in the gap between the inner leads and the gap between the inner lead and the wafer pad support rod. That is, the spacing between the internal leads (including the spacing between the internal leads, the spacing between the inner leads and the wafer pad support bars) is 170 μm or less, and the viscosity of the resin liquid is 9.4 Pa. Above s, or the lead spacing is less than 160 μm, the resin liquid viscosity is 4Pa. s or more, and the ratio of the interval between the leads is 1.14 or less, the resin liquid can be disposed in the gap between the internal leads and The gap between the inner lead and the pad support bar, and in this case, the resin can be applied in one piece to the gap between the inner lead and the inner lead and the pad support bar in a one-stroke manner. gap.

內部引線與晶片銲墊支撐桿之間的間隔對於內部引線間的間隔的比率超過1.14時，則以一筆書寫的要領塗佈於引線間的間隙的樹脂液，是分離、移動在相鄰的內部引線與晶片銲墊支撐桿上，在至少內部引線與晶片銲墊支撐桿之間的問隙，事實上無法配置樹脂液。引線間的間隔是一般為相同惟視情形，有所不相同。內部引線間的間隔比率為1.14以上不相同時，在間隔大的內部引線間的間隙，無法以依所謂一筆書寫的要領的樹脂液的塗佈進行配置樹脂。When the ratio between the inner lead and the wafer pad support bar is more than 1.14 for the interval between the inner leads, the resin liquid applied to the gap between the leads in a writing manner is separated and moved in the adjacent interior. On the lead and wafer pad support rods, at least the gap between the inner leads and the wafer pad support rods, in fact, the resin liquid cannot be disposed. The spacing between the leads is generally the same, which is different. When the interval ratio between the internal leads is different from 1.14 or more, the resin is not disposed in the gap between the internal leads having a large gap, and the resin liquid cannot be applied by coating the resin liquid in a so-called one-stroke manner.

綜合以上，藉由散佈法來塗佈樹脂液，之後藉由熱固定，將樹脂固裝於內部引線的前端部來設置剛性增強部之際，若塗佈時的樹脂液的黏度為至少4Pa．s以上，不拘泥於樹脂液的黏度，引線間的間隔為160 μm以下，又，若塗佈時的樹脂液的黏度為至少9.4Pa．s以上，不拘泥於樹脂液的黏度，引線間的間隔為170 μm以下，以所謂一筆書寫的要領將樹脂液塗佈於內部引線的前端部，藉由配置樹脂加以固定而可設置剛性增強部。又在內部引線與晶片銲墊支撐桿之間的間隔對於內部引線間的間隔的比率為1.14以下，則在內部引線間的間隙及內部引線與晶片銲墊支撐桿之間的間隙，以一筆書寫的要領，高生產性地可塗佈樹脂，而以樹脂可固定內部引線前端部全面。若內部引 線與晶片銲墊支撐桿之間的間隔對於內部引線間的間隔的比率為超過1.14，則在所謂一筆書寫的要領的樹脂液塗佈，可將樹脂配置於內部引線間的間隙，惟無法將樹脂配置在內部引線與晶片銲墊支撐桿之間的間隙。此些事實是本發明人等首先發現者，依據此些新發現的事實而完成本發明。本發明是對半導體的基本零件的引線框開拓了新技術的門扉者，給予半導體業界有很大效果者。In general, the resin liquid is applied by a spreading method, and then the resin is fixed to the front end portion of the inner lead by heat fixing to provide a rigidity reinforcing portion, and the viscosity of the resin liquid at the time of coating is at least 4 Pa. s or more, regardless of the viscosity of the resin liquid, the interval between the leads is 160 μm or less, and the viscosity of the resin liquid at the time of coating is at least 9.4 Pa. s or more, the viscosity of the resin liquid is not limited to 170 μm or less between the leads, and the resin liquid is applied to the tip end portion of the inner lead in a so-called one-stroke manner, and the rigidity reinforcing portion can be provided by fixing the resin. . Further, when the ratio of the interval between the inner lead and the wafer pad support bar to the interval between the inner leads is 1.14 or less, the gap between the inner leads and the gap between the inner leads and the wafer pad support bar are written in one stroke. The main method is to coat the resin with high productivity, and the resin can fix the entire front end of the inner lead. Internal reference The ratio of the spacing between the wire and the wafer pad support bar to the spacing between the inner leads is more than 1.14, so that the resin liquid coating in the so-called one-stroke method can dispose the resin in the gap between the inner leads, but cannot The resin is disposed in the gap between the inner lead and the wafer pad support bar. These facts are the first discoverers of the present inventors, and the present invention has been completed on the basis of these newly discovered facts. The present invention is a threshold for opening up new technologies for lead frames of basic parts of semiconductors, and has been highly effective for the semiconductor industry.

以下，說明本發明的基本上構成。本發明的基本是一種引線框，具備：框架，及從該框架朝中心部延設的晶片銲墊支撐桿，及藉由該晶片銲墊支撐桿被固定在上述框架的中心部的晶片銲墊，及前端側從框架朝框架的中心部(在框中心側)所延設的複數內部引線，在內部引線的前端部設有剛性增強部的引線框，其特徵為：剛性增強部是以樹脂所固定者，鄰接的上述內部引線間的間隔為170 μm以下的部位，且該框架中心側的前端緣被配置在從內部引線的最前端緣距1.2mm以下的位置，將被塗佈於上述內部引線的引線接合面的背面側的樹脂液，固裝於鄰接的內部引線間的間隙者。又也可將剛性增強部的樹脂的框架中心側的前端緣位於從引線的最先端緣距0.1mm以上1.2mm以下的位置。如先前所述地，若塗佈時的樹脂液的黏度至少9.4Pa．s以上，不拘泥於樹脂液的黏度，內部引線間的間隙或內部引線間的間隔及內部引線與晶片銲墊支撐桿之間的間隔為160 μm以下，則可將樹脂配置固定於內部引線的前端部而設置剛性增強部。樹脂的配置是如下所述地 ，如第2(A)圖所示地，樹脂配置於內部引線間的間隙及內部引線與晶片銲墊支撐桿之間的間隙全部者，如第2(B)圖所示地，樹脂配置於內部引線與晶片銲墊支撐桿之間的間隙者，如第2(C)圖所示地，配置於內部引線間的間隙及內部引線與晶片銲墊支撐桿之間的間隙的樹脂的位置為與配置於內部引線間的間隙的樹脂的位置偏離者。在此些任何情形，內部引線間的間隔及內部引線與晶片銲墊支撐桿之間的間隔，是指被配置內部引線間的間隙的樹脂的中間點的引線接合面的內部引線間的間隔及內部引線與晶片銲墊支撐桿之間的間隔，為在第2圖中以T所表示的引線接合面的位置的內部引線間的間隔，內部引線間的間隔及內部引線與晶片銲墊支撐桿之間的間隔。Hereinafter, the basic configuration of the present invention will be described. The present invention basically relates to a lead frame comprising: a frame, and a wafer pad support rod extending from the frame toward the center portion, and a wafer pad fixed to the center portion of the frame by the wafer pad support rod And a plurality of inner leads extending from the frame toward the center of the frame (on the center side of the frame), and a lead frame having a rigidity reinforcing portion at a front end portion of the inner lead, wherein the rigidity reinforcing portion is a resin The fixed portion has a space between the adjacent inner leads of 170 μm or less, and the front end edge of the frame center side is disposed at a position of 1.2 mm or less from the foremost edge of the inner lead, and is applied to the above. The resin liquid on the back side of the wire bonding surface of the inner lead is fixed to the gap between the adjacent inner leads. Further, the front end edge of the resin center side of the resin of the rigidity reinforcing portion may be located at a position of 0.1 mm or more and 1.2 mm or less from the leading edge of the lead. As described earlier, the viscosity of the resin liquid at the time of coating is at least 9.4 Pa. s or more, regardless of the viscosity of the resin solution, the gap between the internal leads or the interval between the internal leads, and the interval between the internal leads and the wafer pad support bar being 160 μm or less, the resin arrangement can be fixed to the internal leads. A rigidity reinforcing portion is provided at the front end portion. The configuration of the resin is as follows As shown in Fig. 2(A), the resin is disposed in the gap between the internal leads and the gap between the internal leads and the wafer pad support rod. As shown in Fig. 2(B), the resin is disposed on the resin. The gap between the inner lead and the wafer pad support bar is as shown in Fig. 2(C), and the position of the resin disposed in the gap between the inner leads and the gap between the inner lead and the wafer pad support bar is Deviated from the position of the resin disposed in the gap between the inner leads. In any of these cases, the spacing between the inner leads and the spacing between the inner leads and the wafer pad support bars refer to the spacing between the inner leads of the wire bond faces at the intermediate points of the resin where the gap between the inner leads is disposed and The spacing between the inner leads and the wafer pad support bars is the spacing between the inner leads at the position of the wire bond faces indicated by T in FIG. 2, the spacing between the inner leads, and the inner leads and the wafer pad support bars The interval between.

配置於內部引線間的間隙，內部引線與晶片銲墊支撐桿之間的間隙的樹脂，是具有大約50~120 μm的長度，較佳是具有200~900 μm的長度。在此，被配置於內部引線間的間隙的樹脂的框架中心側的前端緣的位置為從內部引線的最前端距1.2mm以下的位置，是指該樹脂的框架中心側(晶片銲墊的方向)的前端緣的位置為從內部引線的最前端緣距1.2mm以下的位置的情形。實際上，樹脂是被配置於從內部引線的框架中心側的前端緣距0mm~1.2mm的位置大約樹脂的長度分量大約50~1200 μm的長度全面。The resin disposed in the gap between the inner leads and the gap between the inner leads and the wafer pad support bars has a length of about 50 to 120 μm, preferably a length of 200 to 900 μm. Here, the position of the front end edge of the resin on the center side of the frame disposed on the gap between the internal leads is a position from the foremost end of the inner lead of 1.2 mm or less, which means the center side of the frame of the resin (the direction of the wafer pad) The position of the front end edge is a position from the front end edge of the inner lead to a position of 1.2 mm or less. Actually, the resin is disposed at a position from 0 mm to 1.2 mm from the front end edge of the center side of the frame of the inner lead, and the length of the resin is approximately 50 to 1200 μm.

在引線間(包含內部引線間，內部引線與晶片銲墊支撐桿之間)塗佈樹脂液，之後加熱進行硬化樹脂之後，樹脂的長度是大概增長成為塗佈時的長度大約1.6倍左右。 通常，在塗佈時將樹脂液塗佈於300 μm左右的長度。又，此為在熱硬化後成為500 μm左右的長度。若熱硬化後的樹脂長度為500 μm左右，則框架的剛性變高，成為實用上無問題者。亦即，保持內部引線的機械性強度，引線接合時減少內部引線的振動，又引線接合後，將引線框移送至後續工程之際，成為振動而不會短路的引線框。The resin liquid is applied between the leads (including between the inner leads and between the inner leads and the wafer pad support bars), and after heating and curing the resin, the length of the resin is approximately increased to about 1.6 times the length at the time of coating. Usually, the resin liquid is applied to a length of about 300 μm at the time of coating. Moreover, this is a length of about 500 μm after heat curing. When the length of the resin after the heat curing is about 500 μm, the rigidity of the frame becomes high, and it is practically no problem. That is, the mechanical strength of the inner lead is maintained, and the vibration of the inner lead is reduced at the time of wire bonding, and after the wire bonding is performed, the lead frame is transferred to a lead frame which is vibrated without being short-circuited.

內部引線間的間隔及內部引線與晶片銲墊支撐桿之間的間隔是隨著從內部引線的前端部朝外界引線方向，變愈大。又，引線框是如第38圖所示地，內部引線間的間隙是在各內部引線間大約相同大小，惟晶片銲墊支撐桿與內部引線之間的間隙的大小，是比內部引線間的間隙的大小變大。同時，晶片銲墊支撐桿的寬度也是比內部引線的寬度變寬。此為在半導體裝置裝配工程中，用以防止晶片銲墊或相鄰接的內部引線等擺動而互相地短路。因此，一般被認定將樹脂塗佈於引線框時，樹脂是滯留在內部引線間的間隙，惟有很難滯留在內部引線與晶片銲墊支撐桿之間的間隙的現象。對於此，在內部引線間的間隔及內部引線與晶片銲墊支撐桿之間的間隔為170 μm以下，而塗佈黏度9.4Pa．s以上的樹脂液時，或是在內部引線間的間隔及內部引線與晶片銲墊支撐桿之間隔為160 μm以下，而塗佈黏度4Pa．s以上的樹脂液時，若將內部引線間的間隔及內部引線與晶片銲墊支撐桿之間的間隔作成相同，則可將樹脂容易地配置於內部引線間的間隙及內部引線與晶片銲墊支撐桿之間的間隙(參照第4圖)，樹脂的框架中心 側的前端緣的位置是在第4圖中，位於從內部引線的最前端離開的位置，惟當然如第32圖所示地，將該位置可位於內部引線的最前端的位置。The spacing between the inner leads and the spacing between the inner leads and the wafer pad support bars are greater as they go from the front end of the inner leads toward the outer leads. Moreover, the lead frame is as shown in Fig. 38, and the gap between the inner leads is about the same size between the inner leads, but the gap between the support pads of the die pad and the inner leads is larger than that between the inner leads. The size of the gap becomes larger. At the same time, the width of the wafer pad support bar is also wider than the width of the inner lead. This is in the semiconductor device assembly process to prevent the wafer pads or adjacent internal leads from oscillating and short-circuiting each other. Therefore, when it is generally considered that the resin is applied to the lead frame, the resin is retained in the gap between the internal leads, and it is difficult to stay in the gap between the inner lead and the wafer pad support rod. For this reason, the spacing between the inner leads and the spacing between the inner leads and the wafer pad support bars are 170 μm or less, and the coating viscosity is 9.4 Pa. When the resin liquid is above s, or the interval between the inner leads and the interval between the inner lead and the wafer pad support rod are 160 μm or less, and the coating viscosity is 4 Pa. When the resin liquid is s or more, if the interval between the inner leads and the interval between the inner leads and the wafer pad support rod are the same, the resin can be easily disposed in the gap between the inner leads and the inner leads and the wafer pads. The gap between the support rods (refer to Figure 4), the center of the frame of the resin The position of the front end edge of the side is at the position away from the foremost end of the inner lead in Fig. 4, but of course, as shown in Fig. 32, the position can be located at the foremost end of the inner lead.

在內部引線間的間隔及內部引線與晶片銲墊支撐桿之間的間隔為170 μm以下，而塗佈黏度9.4Pa．s以上的樹脂液時，或是在內部引線間的間隔及內部引線與晶片銲墊支撐桿之間的間隔為160 μm以下，而塗佈黏度4Pa．s以上的樹脂液時，在對於內部引線間的間隔與內部引線與晶片銲墊支撐桿之間的間隔比率超過1.14時，若將樹脂液以一筆書寫的要領塗佈於引線框，則在內部引線間的間隙會滯留樹脂，惟成為樹脂液不容易滯留在內部引線與晶片銲墊支撐桿之間的間隙。因此，在此種情形，藉由將配置於內部引線與晶片銲墊支撐桿之間的樹脂位置，此配置於內部引線間的間隙的樹脂的框架側的前端緣的位置還偏位於框架側，則可將樹脂液穩定地配置在內部引線與晶片銲墊支撐桿之間(參照第3圖的情形)。又，偏離於該框架側的位置是具體上採用0.5mm以上較佳。在第3圖中，從配置於內部引線間的間隙的樹脂252的框架側的前端緣位置距G距離的位置，亦即，在至少距0.5mm的位置作成為配置於內部引線與晶片銲墊支撐桿之間的間隙的樹脂的框架中心側的前端緣位置。亦即，將配置於內部引線與晶片銲墊支撐桿之間的間隙的樹脂的框架中心側位置，比配置於內部引線與晶片銲墊支撐桿之間的間隙的樹脂的框架中心側位置，比配置於內部引線間的間隙的樹脂的框架側 位置還偏離框架側。在第3圖中，樹脂的框架中心側的前端緣，位於從內部引線的最前端離開的位置，惟如第34圖所示地，當然可將樹脂的框架中心側的前端緣的位置，作成內部引線的最前端的位置。如先前所述地，框架側是指與配置有晶片銲墊的方向相反側的方向。亦即外界引線的方向。The spacing between the inner leads and the spacing between the inner leads and the wafer pad support bars are 170 μm or less, and the coating viscosity is 9.4 Pa. When the resin liquid is above s, or the interval between the inner leads and the interval between the inner lead and the wafer pad support rod is 160 μm or less, and the coating viscosity is 4 Pa. In the case of the above resin liquid, when the ratio between the inner lead and the inner lead and the wafer pad support rod exceeds 1.14, if the resin liquid is applied to the lead frame in a one-stroke manner, the inside is applied internally. The gap between the leads retains the resin, but the resin liquid does not easily stay in the gap between the inner lead and the wafer pad support bar. Therefore, in this case, by arranging the resin position disposed between the inner lead and the wafer pad support rod, the position of the front end edge of the frame side of the resin disposed in the gap between the inner leads is also located on the frame side. Then, the resin liquid can be stably disposed between the inner lead and the wafer pad support rod (refer to the case of Fig. 3). Further, the position deviated from the side of the frame is preferably 0.5 mm or more. In Fig. 3, the position of the front end edge of the resin 252 disposed on the gap between the inner leads is at a distance from the G, that is, at a position at least 0.5 mm, which is disposed on the inner lead and the wafer pad. The front end edge position of the center side of the frame of the resin of the gap between the support bars. That is, the frame center side position of the resin disposed in the gap between the inner lead and the wafer pad support rod is larger than the frame center side position of the resin disposed in the gap between the inner lead and the wafer pad support rod. Frame side of resin disposed in the gap between internal leads The position also deviates from the frame side. In Fig. 3, the front end edge of the center side of the frame of the resin is located away from the foremost end of the inner lead. However, as shown in Fig. 34, the position of the front end edge of the center side of the frame of the resin can of course be made. The position of the front end of the inner lead. As described earlier, the frame side refers to the direction opposite to the direction in which the wafer pads are disposed. That is, the direction of the outer leads.

將內部引線的寬度變窄，同時地將內部引線間的間隔變窄，則對於此，一般為晶片銲墊支撐桿的寬度也會變窄。然而若將晶片銲墊支撐桿的寬度變窄，則有減弱支撐晶片銲墊支撐桿的晶片銲墊的力量的問題。為了確保該晶片銲墊的力量，即使將內部引線的寬度變窄，則晶片銲墊支撐桿的寬度是會變寬的情形。一般，晶片銲墊支撐桿的寬度是作成內部引線的寬度的2~5倍左右者之故，因而愈將內部引線的寬度變窄，晶片銲墊支撐桿的寬度，是相對於內部引線的寬度必須相對性地變寬。然而，若將晶片銲墊支撐桿的寬度變寬，則有所塗佈的樹脂不會移動到內部引線與晶片銲墊支撐桿之間的間隙而滯留在晶片銲墊支撐桿上的問題。By narrowing the width of the inner lead and narrowing the interval between the inner leads at the same time, generally, the width of the wafer pad support bar is also narrowed. However, if the width of the wafer pad support bar is narrowed, there is a problem that the force of the wafer pad supporting the wafer pad support bar is weakened. In order to secure the strength of the wafer pad, even if the width of the inner lead is narrowed, the width of the wafer pad support bar is widened. Generally, the width of the wafer pad support rod is about 2 to 5 times the width of the inner lead, so that the width of the inner lead is narrowed, and the width of the wafer pad support rod is relative to the width of the inner lead. Must be relatively widened. However, if the width of the wafer pad support rod is widened, the coated resin does not move to the gap between the inner lead and the wafer pad support rod and remains on the wafer pad support rod.

將晶片銲墊支撐桿的寬度變寬時，則在相當於晶片銲墊支撐桿的剛性增強部的部位設置開縫狀開口部。開縫狀開口部是至少可設置1個。當然因應於晶片銲墊支撐桿的寬度或內部引線間的間隔等，可設置複數個開縫狀開口部。這時候，開縫狀開口部的寬度，是作成與內部引線間的間隔相同尺寸較佳。又，內部引線與晶片銲墊支撐桿之間 的間隔是對內部引線間的間隔，作成1~1.14的寬度的尺寸較佳。如此地，晶片銲墊支撐桿的寬度寬大時，藉由在晶片銲墊支撐桿設置開縫狀開口部，所塗佈的樹脂是成為可移動在內部引線與晶片銲墊支撐桿間的間隙及開縫狀開口部，以所謂一筆書寫的要領進行塗佈樹脂，而成為在引線框可形成剛性增強部。When the width of the wafer pad support rod is widened, a slit-like opening portion is provided at a portion corresponding to the rigidity reinforcing portion of the wafer pad support rod. At least one slit opening may be provided. Of course, a plurality of slit-like openings may be provided depending on the width of the wafer pad support bar or the interval between the internal leads. At this time, the width of the slit-like opening portion is preferably the same size as the interval between the inner leads. Also, between the inner lead and the wafer pad support bar The interval is an interval between the inner leads, and a size of 1 to 1.14 is preferable. In this way, when the width of the wafer pad support rod is wide, by providing a slit-like opening in the wafer pad support rod, the applied resin is a gap that can be moved between the inner lead and the wafer pad support rod and The slit-shaped opening portion is coated with a resin in a so-called one-stroke manner, and a rigidity-enhancing portion can be formed in the lead frame.

又，針對於開縫狀開口部的寬度尺寸，與在〔本發明的語言的定義］的項所述者同樣地，是指配置於晶片銲墊支撐桿的剛性增強部的樹脂的中間點的引線接合的寬度。In addition, the width dimension of the slit-like opening portion is the intermediate point of the resin disposed in the rigidity-enhancing portion of the wafer pad support bar, as described in the section [Definition of Language of the Present Invention]. The width of the wire bond.

又，對於內部引線間的間隔及內部引線與晶片銲墊支撐桿之間的間隔的比率超過1.14，而內部引線與晶片銲墊支撐桿之間的間隔超過170 μm時，則在內部引線與晶片銲墊支撐桿之間的間隙未配置樹脂，而僅在內部引線間的間隙配置樹脂也可以(參照第5圖)。又，即使內部引線與晶片銲墊支撐桿之間的間隔為170 μm以下時或內部引線與晶片銲墊支撐桿之間的間隔對於內部引線間的間隔的比率為1.14以下時，當然在內部引線與晶片銲墊支撐桿之間的間隙未配置樹脂，而僅在內部引線間的間隙可配置樹脂。內部引線間的樹脂的框架中心側的前端緣位置，在第5圖中，位於從內部引線的最前端離開的位置，惟此為如第33圖所示地，當然也可作成位於內部引線的最前端的位置。Moreover, the ratio of the spacing between the inner leads and the spacing between the inner leads and the wafer pad support bars exceeds 1.14, and when the spacing between the inner leads and the wafer pad support bars exceeds 170 μm, then the inner leads and wafers Resin is not disposed in the gap between the pad support bars, and resin may be disposed only in the gap between the inner leads (see Fig. 5). Further, even when the interval between the inner lead and the wafer pad support bar is 170 μm or less or the ratio of the interval between the inner lead and the wafer pad support bar to the interval between the inner leads is 1.14 or less, of course, the inner lead The gap with the wafer pad support bar is not provided with a resin, and the resin can be disposed only in the gap between the inner leads. The position of the front end edge of the center side of the frame of the resin between the inner leads is located at the position away from the foremost end of the inner lead in Fig. 5, but as shown in Fig. 33, of course, it can also be made to be located inside the inner lead. The front end position.

使用於本發明的樹脂是可使用熱硬化性樹脂，UV硬化性樹脂及熱可塑性樹脂，惟使用熱硬化性樹脂較佳。作 為硬化性樹脂的具體性者，有丙烯系熱硬化性樹脂、聚醯亞胺系熱硬化性樹脂、聚醯胺醯亞胺系熱硬化性樹脂、環氧系熱硬化性樹脂等，惟環氧系熱硬化性樹脂可適當地使用。又，可適當地使用環氧樹脂及潛在性硬化劑所構成的一液型熱硬化性樹脂。此為溫度變高會令硬化劑顯在化，而與環氧樹脂反應而會硬化的型式者。該型式的環氧樹脂是在常溫下，不會顯著地進行樹脂的硬化而可長期保存之外，又在使用之前，也不需要混合環氧樹脂與硬化劑的工夫，而具有容易處理的特徵。所謂潛在性硬化劑是使用時為止被抑制作為硬化劑的活性，而在使用時，給予外來的刺激、熱、紫外線、放射線等時，才發揮作為其硬化劑的活性的型式者。The resin to be used in the present invention may be a thermosetting resin, a UV curable resin or a thermoplastic resin, but a thermosetting resin is preferably used. Make Specific examples of the curable resin include a propylene-based thermosetting resin, a polyimide-based thermosetting resin, a polyamidoximine-based thermosetting resin, and an epoxy-based thermosetting resin. The oxygen thermosetting resin can be suitably used. Further, a one-pack type thermosetting resin composed of an epoxy resin and a latent curing agent can be suitably used. This is a type in which the temperature becomes high and the hardener is manifested, and the epoxy resin reacts to harden. This type of epoxy resin can be stored at room temperature without significant hardening of the resin, and can be stored for a long period of time. Moreover, it is not necessary to mix epoxy resin and hardener before use, and has easy handling characteristics. . The latent curing agent is an activity that is inhibited as a curing agent when it is used, and when it is used, when it is given external stimuli, heat, ultraviolet rays, radiation, or the like, it exhibits activity as a curing agent.

環氧系樹脂的硬化劑是被使用著漆用酚醛樹脂系硬化劑、酸無水物系硬化劑、胺系硬化劑、胺加合系硬化劑等的硬化劑。潛在性硬化劑是此些硬化劑的核心表面藉由合成樹脂等所構成的殼體所被覆的構造的硬化劑。作為殼體的合成樹脂，適用也可使用著乙醇類與異氰酸酯類的反應生成物的氨基甲酸乙酯、環氧系樹脂、酚系樹脂。殼體是粉碎固體狀的硬化劑作為粒子狀，將析出藉反應生成於該粒子表面上所生成的殼體成分的粒子表面作為反應場所，而在該處形成殼體等的方法可得到。在潛在性硬化劑的表面形成有薄膜狀者，而潛在性硬化劑是成為以一種微膠囊所保護的形態。The curing agent of the epoxy resin is a curing agent such as a phenol resin-based curing agent, an acid-anhydride-based curing agent, an amine-based curing agent, or an amine-additive curing agent. The latent hardener is a hardener of a structure in which the core surface of such a hardener is covered by a casing made of synthetic resin or the like. As the synthetic resin of the casing, a urethane, an epoxy resin, or a phenol resin which is a reaction product of an alcohol and an isocyanate may be used. The casing is obtained by pulverizing a solid hardener as a particulate form, and depositing a surface of a particle which is a shell component formed by the reaction on the surface of the particle as a reaction site, and forming a casing or the like there. A film-like shape is formed on the surface of the latent hardener, and the latent hardener is in a form protected by a microcapsule.

以樹脂固定本發明的內部引線的前端部的引線框，是 可使用在半導體裝置。本發明的引線框是對應於半導體裝置的多端子化者，而以低成本、高生產性可實現高功能、高性能的半導體裝置者。The lead frame for fixing the front end portion of the inner lead of the present invention with a resin is It can be used in semiconductor devices. The lead frame of the present invention is a multi-terminal semiconductor device, and can realize a high-performance, high-performance semiconductor device with low cost and high productivity.

〔本發明的引線框的製造方法的說明］[Description of Method of Manufacturing Lead Frame of the Present Invention]

以下，針對於引線框的製造方法加以說明。以前端連結部來連結內部引線的前端部之下，以樹脂固定內部引線的前端部，之後施以高鍍加工，而在完成電鍍加工之後，切斷分離內部引線的前端連結部而以製造引線框的方法為主體進行說明。但是，藉由先進行電鍍加工之後施以樹脂固定，當然也可製造本發明的引線框。Hereinafter, a method of manufacturing the lead frame will be described. The front end portion of the inner lead is connected to the lower end portion of the inner lead by the front end connecting portion, and the front end portion of the inner lead is fixed by resin, and then high plating is applied. After the plating process is completed, the front end connecting portion of the inner lead is cut off to manufacture the lead. The method of the box is explained for the main body. However, the lead frame of the present invention can of course be produced by first performing electroplating and then applying resin fixing.

本發明的引線框的製造方法的要旨是具備：框架，及從該框架朝中心部延設的晶片銲墊支撐桿，及藉由該晶片銲墊支撐桿被固定在上述框架的中心部的晶片銲墊，及前端側從框架朝框架的中心部所延設的複數內部引線，在內部引線的前端部設有剛性增強部的引線框，其特徵為：在鄰接的內部引線間的間隔為170 μm以下的部位，將至少塗佈時的黏度為9.4Pa．s以上54Pa．s以下的樹脂液，或是，在鄰接的內部引線間的間隔為160 μm以下的部位，將至少塗佈時的黏度為4Pa．s以上54Pa．s以下的樹脂液，藉由螺旋式散佈法塗佈在引線接合面的背面，而將利用表面張力所塗佈的樹脂液流動在內部引線間的間隙或內部引線間的間隙及內部引線與晶片銲墊支撐桿之間的間隙，然後藉由加熱來固裝樹脂而在內部引線的前端部形成剛 性增強部，而切斷分離內部引線的前端連結部，以便剛性增強部的框架中心側前端緣的位置位於從內部引線的最前端緣距1.2mm以下的位置。The method for manufacturing a lead frame according to the present invention includes: a frame, and a wafer pad support rod extending from the frame toward the center portion, and a wafer fixed to the center portion of the frame by the wafer pad support rod a pad and a plurality of inner leads extending from the frame toward the center of the frame at the front end side, and a lead frame having a rigidity reinforcing portion at a front end portion of the inner lead, wherein the interval between the adjacent inner leads is 170 The part below μm will have a viscosity of at least 9.4 Pa when applied. s above 54Pa. The resin liquid below s, or a portion having an interval of 160 μm or less between adjacent internal leads, has a viscosity of at least 4 Pa when applied. s above 54Pa. The resin liquid below s is applied to the back surface of the wire bonding surface by a spiral dispersion method, and the resin liquid applied by the surface tension flows in the gap between the internal leads or the gap between the internal leads and the internal leads and the wafer The gap between the pads supports the rods, and then the resin is fixed by heating to form the just-end portion of the inner leads. The end portion connecting portion that separates the inner leads is cut so that the position of the front end edge of the frame center side of the rigidity reinforcing portion is located at a position equal to or smaller than 1.2 mm from the foremost edge of the inner lead.

使用於本發明的樹脂是未溶解於溶劑而以樹脂單獨地使用也可以，將樹脂溶解於溶劑而以溶液狀態使用也可以，任何情形，樹脂是以液狀狀態進行塗佈較佳。這時候，所塗佈的樹脂黏度極重要。實際上，塗佈時的樹脂液的黏度極重要。樹脂液的黏度是對周圍的環境溫度會受到很大影響。欲有效率地塗佈樹脂，則將塗佈時的樹脂液的黏度作成4Pa．s~54Pa．s。此為，在黏度不足4Pa．s，則在引線間隔170 μm以上的引線框無法配置樹脂，或是超過54Pa．s的黏度時，則在引線間隔185 μm以上的引線框無法配置樹脂(參照第31圖)，導致很難進行樹脂液的塗佈。塗佈時的樹脂液黏度是4Pa．s~54Pa．s，較佳為12~30Pa．s。若黏度低，則所塗佈的樹脂成為難滯留在內部引線間的間隙，內部引線與晶片銲墊支撐桿之間的間隙，若樹脂液的黏度高，除了樹脂液的塗佈成為困難之外，還有很難將樹脂均勻地塗佈在引線框的各間隙。欲規定塗佈時的樹脂液的黏度，採用保持在樹脂的塗佈環境相當時間，或保溫分配器，或作成可溫度調節分配器者等的措施較佳。又，分子量大的樹脂黏度是高，而分子量小的樹脂黏度是低。又，使用分子量小的樹脂時，當最後固化時，則橋接密度變高，硬化後的樹脂物性也有不好的情形，而使用較大分子量的樹脂較佳，分子量大的樹脂是其黏度較 高之故，因而必須調節塗佈時的溫度，而以適當黏度進行塗佈的考慮。The resin to be used in the present invention may be used alone or in combination with a resin, and the resin may be dissolved in a solvent and used as a solution. In any case, the resin is preferably applied in a liquid state. At this time, the viscosity of the applied resin is extremely important. In fact, the viscosity of the resin liquid at the time of coating is extremely important. The viscosity of the resin solution is greatly affected by the ambient temperature around it. In order to apply the resin efficiently, the viscosity of the resin liquid at the time of coating is set to 4 Pa. s~54Pa. s. This is, the viscosity is less than 4Pa. s, the lead frame with lead spacing of 170 μm or more cannot be configured with resin, or exceeds 54Pa. In the case of the viscosity of s, the resin is not disposed in the lead frame having a lead interval of 185 μm or more (see Fig. 31), and it is difficult to apply the resin liquid. The viscosity of the resin solution at the time of coating is 4Pa. s~54Pa. s, preferably 12~30Pa. s. If the viscosity is low, the applied resin becomes a gap which is hard to stay in the inner lead, and the gap between the inner lead and the wafer pad support rod. If the viscosity of the resin liquid is high, it is difficult to apply the resin liquid. It is also difficult to uniformly apply the resin to the respective gaps of the lead frame. In order to specify the viscosity of the resin liquid at the time of coating, it is preferable to use a method of holding the resin in a coating environment for a relatively long period of time, or to heat the dispenser, or to make a temperature-adjustable dispenser. Further, the resin having a large molecular weight has a high viscosity, and the resin having a small molecular weight has a low viscosity. Further, when a resin having a small molecular weight is used, when the final curing is performed, the bridging density is increased, and the physical properties of the resin after curing are also poor, and a resin having a relatively large molecular weight is preferably used, and a resin having a large molecular weight is more viscous. Therefore, it is necessary to adjust the temperature at the time of coating and to apply the coating at an appropriate viscosity.

所配置的樹脂的框架中心側(晶片銲墊方向)的最前端緣，成為從內部引線的最前端距1.2mm以下的範圍般地切斷分離內部引線的前端連結部，惟若該距離過長，則樹脂固定內部引線的前端部的效果變小。又，包含配置有樹脂的部分而將切斷分離內部引線的前端連結部的情形作為問題時，乃為了防止依發生打痕、毛邊等的對引線框的品質上的不良影響的意思，而在從配置於內部引線間的間隙的樹脂的框架中心側的前端位置距0.1mm~1.2mm框架中心側的位置切斷分離內部引線的前端連結部較佳。The front end edge of the frame center side (wafer pad direction) of the resin to be disposed is a front end connecting portion that separates and separates the inner lead from a range of 1.2 mm or less from the foremost end of the inner lead, but if the distance is too long Then, the effect of fixing the front end portion of the inner lead of the resin becomes small. In addition, in the case where the portion where the resin is disposed and the front end connecting portion of the inner lead is cut and separated is used as a problem, it is intended to prevent adverse effects on the quality of the lead frame due to occurrence of scratches, burrs, and the like. It is preferable that the front end connecting portion for separating the inner lead is cut from a position on the center side of the frame from 0.1 mm to 1.2 mm from the front end position of the center of the frame of the resin disposed in the gap between the inner leads.

在引線間的間隔170 μm以下，塗佈黏度9.4Pa．s以上的樹脂液時，或在引線間的間隔160 μm以下，塗佈黏度4Pa．s以上的樹脂液時，當內部引線間的間隔及內部引線與晶片銲墊支撐桿之間的間隔相等時，或對於內部引線間的間隔的內部引線與晶片銲墊支撐桿之間的間隔的比率為1.14以下時，是以所謂一筆書寫的要領，可將樹脂液塗佈於引線框前端部。一方面，對於內部引線間的間隔的內部引線與晶片銲墊支撐桿之間的間隔的比率為超過1.14時，將樹脂液以所謂一筆書寫的要領塗佈於引線框前端部時，在內部引線間的間隙會滯留樹脂，惟在內部引線與晶片銲墊支撐桿之間的間隙不容易滯留樹脂液。此種情形，則將樹脂液塗佈於內部引線與晶片銲墊支撐桿之間的間隙的位置從將樹脂液塗佈於內部引線間的間隙的位置偏 離。亦即，藉由配置於內部引線與晶片銲墊支撐桿之間的樹脂的框架中心側(晶片銲墊方向)的前端位置比配置於內部引線間的間隙的樹脂的框架側的前端緣，亦即比與晶片銲墊相反方向的前端緣還朝框架側偏離，可將樹脂液穩定地塗佈，配置在內部引線與晶片銲墊支撐桿之間。又，朝該框架側偏離的位置，具體上採用0.5mm以上框架側較佳。在此，如先前也所述地，框架側是指與配置者晶片銲盤的方向相反側的方向，亦即指外界引線的方向。藉由將配置於內部引線與晶片銲墊支撐桿之間的間隙的樹脂的位置，作成從配置於內部引線間的間隙的樹脂的框架側的前端緣位置距0.5mm以上框架側，可將塗佈於內部引線與晶片銲墊支撐桿之間的間隙的樹脂配置在內部引線間的間隔。又，尤其是，內部引線與晶片銲墊支撐桿之間的間隔超過170 μm時，則僅將樹脂配置在內部引線間的間隙。而未將樹脂配置在內部引線與晶片銲墊支撐桿之間的間隙也可以。The gap between the leads is 170 μm or less, and the coating viscosity is 9.4 Pa. When the resin liquid is s or higher, or the interval between the leads is 160 μm or less, the viscosity is 4 Pa. For the resin liquid above s, when the interval between the inner leads and the interval between the inner lead and the wafer pad support rod are equal, or the interval between the inner lead and the wafer pad support rod between the inner leads When the ratio is 1.14 or less, it is a so-called one-stroke method, and the resin liquid can be applied to the tip end portion of the lead frame. On the one hand, when the ratio of the interval between the inner lead and the wafer pad support rod between the inner leads is more than 1.14, the resin liquid is applied to the front end portion of the lead frame in a so-called one-stroke manner, and the inner lead is The gap between the two will retain the resin, but the gap between the inner lead and the wafer pad support bar does not easily retain the resin liquid. In this case, the position where the resin liquid is applied to the gap between the inner lead and the wafer pad support rod is offset from the position where the resin liquid is applied to the gap between the inner leads. from. In other words, the front end position of the center side of the frame (the wafer pad direction) of the resin disposed between the inner lead and the wafer pad support rod is larger than the front end edge of the frame side of the resin disposed in the gap between the inner leads. That is, the front end edge in the opposite direction to the wafer pad is further deviated toward the frame side, and the resin liquid can be stably applied and disposed between the inner lead and the wafer pad support rod. Further, it is preferable to use a frame side of 0.5 mm or more in a position deviated toward the frame side. Here, as also previously described, the frame side refers to the direction opposite to the direction of the configurator wafer pad, that is, the direction of the outer lead. The position of the resin disposed in the gap between the inner lead and the wafer pad support rod can be coated from the front end edge of the frame side of the resin disposed on the gap between the inner leads by 0.5 mm or more. The resin disposed between the inner lead and the wafer pad support bar is disposed at intervals between the inner leads. Further, in particular, when the interval between the inner lead and the wafer pad support rod exceeds 170 μm, only the resin is disposed in the gap between the inner leads. The resin may not be disposed in the gap between the inner lead and the wafer pad support bar.

一方面，在內部引線與晶片銲墊支撐桿之間的間隔超過170 μm的情形，晶片銲墊支撐桿的寬度過寬時，則成為很難將樹脂塗佈於內部引線與晶片銲墊支撐桿之間的間隙。晶片銲墊支撐桿是通常存在4部位之故，因而若以所謂一筆書寫的要領進行塗佈樹脂，則成為在晶片銲墊支撐桿的部位會中斷樹脂塗佈，而成為大輻度降低樹脂塗佈的生產性的主要原因。由樹脂塗佈的生產性的觀點上，期盼在晶片銲墊支撐桿的部位不會中斷樹脂塗佈而以所謂一筆 書寫的要領進行塗佈樹脂。在內部引線的寬度寬廣時，則藉由在相當於晶片銲墊支撐桿的剛性增強部的部位設置開縫狀開口部，成為以所謂一筆書寫的要領可進行塗佈樹脂，而可維持樹脂塗佈的高生產性。On the one hand, in the case where the interval between the inner lead and the wafer pad support rod exceeds 170 μm, when the width of the wafer pad support rod is too wide, it becomes difficult to apply the resin to the inner lead and the wafer pad support rod. The gap between them. The wafer pad support bar usually has four parts. Therefore, if the resin is applied in the manner of so-called one-stroke writing, the resin coating is interrupted at the portion of the wafer pad support rod, and the resin is coated with a large radius. The main reason for the productivity of cloth. From the viewpoint of productivity of resin coating, it is expected that the coating of the wafer pad support bar will not interrupt the resin coating. The essentials of writing are applied to the resin. When the width of the inner lead is wide, a slit-like opening is provided in a portion corresponding to the rigidity reinforcing portion of the wafer pad support rod, so that the resin can be applied in a so-called one-stroke manner, and the resin coating can be maintained. The high productivity of the cloth.

施以電鍍之際，若在內部引線間的間隙及內部引線與晶片銲墊支撐桿之間的間隙配置有樹脂時，藉由在所配置的樹脂上置放電鍍罩幕，就可防止電鍍從電鍍罩幕內側端侵入到引線厚度側壁部。一方面，僅將樹脂配置於內部引線間的間隙，而未將樹脂配置於內部引線與晶片銲墊支撐桿之間的間隙時，則樹脂未連結引線框的全周之故，因而從未連結有樹脂的部分(內部引線與晶片銲墊支撐桿之間的間隙)流出電鍍液，而成為不需要部分也進行電鍍。為了對應於此，如第23(b)圖所示地，在內部引線與晶片銲墊支撐桿之間相當於電鍍液所流出的部分的電鍍罩幕488設置防止電鍍液流出的壩部502，施以電鍍較佳。When electroplating is applied, if a gap is formed between the inner leads and the gap between the inner leads and the wafer pad support bars, the plating can be prevented by placing a plating mask on the disposed resin. The inner side of the plating mask intrudes into the side wall portion of the lead thickness. On the other hand, when only the resin is placed in the gap between the inner leads, and the resin is not placed in the gap between the inner lead and the wafer pad support rod, the resin is not connected to the entire circumference of the lead frame, and thus the unconnected The resin portion (the gap between the inner lead and the wafer pad support rod) flows out of the plating solution, and is electroplated as an unnecessary portion. In order to cope with this, as shown in Fig. 23(b), a plating mask 488 corresponding to a portion where the plating solution flows out between the inner lead and the wafer pad support rod is provided with a dam portion 502 for preventing the plating solution from flowing out, It is preferred to apply electroplating.

引線框是在施以引線接合的部分電鍍銀、鈀等引線接合性良好的金屬。事先未切斷分離內部引線的前端連結部而施以電鍍時，則在施以電鍍之後塗佈樹脂而固定內部引線也可以，或塗佈樹脂而固定內部引線也可以，或塗佈樹脂而固定內部引線之後施以電鍍也可以。先塗佈樹脂之後施以電鍍時。則將電鍍罩幕裝設在配置於內部引線間的間隙的樹脂上較佳。施以電鍍之後，在從配置於內部引線間的間隙的樹脂的框架中心側的前端位置距0~1.2mm的框架中心側的位置，切斷分離內部引線的前端連結部。包含樹 脂而暫不切斷分離時，則在從配置於內部引線間的間隙的樹脂的框架中心側前端緣位置距0.1mm~1.2mm的框架中心側的位置，切斷分離內部引線的前端連結部較佳。The lead frame is a metal having good wire bonding properties such as silver plating or palladium plating on a portion to which wire bonding is applied. When the front end connecting portion for separating the inner lead is not cut and plated in advance, the resin may be applied after plating, and the inner lead may be fixed, or the resin may be applied to fix the inner lead, or the resin may be fixed. It is also possible to apply electroplating after the internal leads. When plating is applied after the resin is applied first. It is preferable to mount the plating mask on the resin disposed in the gap between the internal leads. After the plating, the front end connecting portion that separates the inner lead is cut at a position on the center of the frame from 0 to 1.2 mm from the front end position of the center of the frame of the resin disposed in the gap between the inner leads. Include tree When the grease is not cut off, the front end connecting portion of the inner lead is cut off at a position on the center side of the frame of 0.1 mm to 1.2 mm from the center edge of the frame center side of the resin disposed in the gap between the inner leads. Preferably.

本發明是在引線框的內部引線前端部中，藉由將樹脂於內部引線間的間隙或內部引線間的間隙及內部引線與晶片銲墊支撐桿之間的間隙，固定有內部引線作為特徵的引線框。在依傳統的膠帶的固定。為在從進行引線接合的場所有段距離的場所配置有膠帶之故，因而內部引線的前端部，是特別在引線接合時成為激烈振動。該振動的程度是藉由內部引線的排列方向也不相同。對於此，本發明的內部引線是藉由樹脂(接著劑)固定有具前端部分之故，因而施以引線接合之際，內部引線的振動是沒有或至少很小，而成為確保機械性強度者。隨著此，施以引線接合之際，不必對每一內部引線設定調整接合條件，而引線接合本身也成為穩定者。又，在引線接合後進行移送引線框之際，內部引線的前端部是成為沒有振動而至少減小振動之故，因而引線框的處理成為容易。According to the present invention, in the inner lead end portion of the lead frame, the inner lead is fixed by a gap between the inner lead or a gap between the inner lead and a gap between the inner lead and the wafer pad support rod. Lead frame. Fixed in the traditional tape. Since the tape is disposed in a place where the distance from the field where the wire bonding is performed is performed, the tip end portion of the inner lead is particularly vibrated during wire bonding. The degree of vibration is also different by the arrangement direction of the inner leads. In this regard, the inner lead of the present invention is fixed with a front end portion by a resin (adhesive), and thus, when the wire bonding is performed, the vibration of the inner lead is not or at least small, and the mechanical strength is ensured. . Along with this, when wire bonding is performed, it is not necessary to set adjustment bonding conditions for each inner lead, and the wire bonding itself is also stabilized. Further, when the lead frame is transferred after the wire bonding, the tip end portion of the inner lead is free from vibration and at least the vibration is reduced, so that the processing of the lead frame is facilitated.

為了以樹脂固定內部引線的前端部，在本發明中，不必黏貼膠帶，也不會浪費膠帶材料。在依傳統的膠帶的固定，使用成本高的例如聚醯亞胺樹脂的膠帶之故，因而在此點上，本發明是在成本上也成為有很大效果者。在引線接合上，內部引線也不會振動而穩定之故，因而可均勻地 穩定地進行引線接合，而在引線前端施以引線接合之故，因而細線的長度也可作成比傳統的引線接合者還短。In order to fix the front end portion of the inner lead with a resin, in the present invention, it is not necessary to stick the tape, and the tape material is not wasted. In the conventional tape fixing, a tape having a high cost, for example, a polyimide resin, is used, and thus the present invention is also highly effective in terms of cost. On the wire bonding, the inner leads are not vibrated and stabilized, so that they can be evenly Wire bonding is performed stably, and wire bonding is applied to the leading end of the wire, so that the length of the thin wire can be made shorter than that of the conventional wire bonding person.

以樹脂固定內部引線前端部之際，使用分配器進行塗佈樹脂液，而且僅移動分配器到須塗佈的場所就可塗佈樹脂之故，因而塗佈樹脂是簡單，而且樹脂液是藉由表面張力自然地流動到內部引線間的間隙，內部引線與晶片銲墊支撐桿之間的間隙，不必嚴密地進行調節塗佈量，發揮生產性高，可塗佈樹脂液的效果。When the front end portion of the inner lead is fixed by a resin, the resin liquid is applied by using a dispenser, and the resin can be applied only by moving the dispenser to a place to be coated, so that the resin is simple, and the resin liquid is borrowed. The surface tension naturally flows to the gap between the inner leads, and the gap between the inner lead and the wafer pad support bar does not have to be adjusted to a tightly applied amount, and the effect of coating the resin liquid can be exhibited with high productivity.

又，藉由固定內部引線的前端部，發揮以下效果。在依現狀所進行的膠帶的引線固定，因顧客別地引線固定的規格不相同，因此必須具有膠帶寬不相同的存庫，具有膠帶沖孔黏貼的金屬模等會被顧客別地要求。對於此，依本發明的樹脂的固定，顧客別的對應是僅變更塗佈條件的程式變更，極通用者。此為，在庫存管理，金屬模的維修等上可大幅度地減低成本。又，在依現行膠帶的固定，沖孔膠帶之故，因而發生不需要部分。一方面，在依本發明的樹脂的固定，幾乎不會發生不需要部分，而具有減低成本的效果。又，在依現行的膠帶的固定，沖孔膠帶之後的材料是無法利用，進行燃燒廢棄處分。此點，在依本發明的樹脂的固定，廢棄處分物是極少量，而對環境的影響很小。Moreover, by fixing the front end portion of the inner lead, the following effects are exhibited. In the case where the lead wire of the tape is fixed according to the current situation, since the specifications of the customer's other lead wires are different, it is necessary to have a memory having a different tape width, and a metal die having a tape punching and sticking is required by the customer. In this regard, according to the fixing of the resin of the present invention, the customer's correspondence is a program change that changes only the coating conditions, and is extremely common. This is a significant reduction in cost in inventory management, maintenance of metal molds, and the like. Further, in the case of fixing the tape according to the current tape, the unnecessary portion is generated. On the other hand, in the fixing of the resin according to the present invention, an unnecessary portion hardly occurs, and the effect of reducing the cost is obtained. In addition, the material after the punching tape is unusable according to the fixing of the current tape, and the burning waste is disposed. At this point, in the fixing of the resin according to the present invention, the discarded portion is extremely small and has little influence on the environment.

以下，依據實施形態進行說明本發明。Hereinafter, the present invention will be described based on the embodiments.

〔樹脂的塗佈方法］ 首先，塗佈樹脂液，是在樹脂硬化前的液狀狀態成將樹脂溶解於溶劑的溶液的狀態下，亦即在液體的狀態下，藉由螺旋式散佈進行塗佈。使用於散佈的分配器400是由收納樹脂液的樹脂容器440，供應樹脂所用的螺旋410，被連結於容器前端部的噴嘴430，樹脂供應噴射器420等所構成(請參照第6圖)。藉由螺旋410使得樹脂液被供應到內部引線上，而將噴嘴430朝內部引線的鄰接方向依次移動進行塗佈樹脂液。這時候，樹脂液是避開進行引線接合之面，而塗佈在進行引線接合之面的背面。此為當將樹脂液塗佈於引線接合面，則有妨礙引線接合作業的細線與內部引線的接著之虞，又，有引線接合點的電阻變大之虞，而為了避開此些。樹脂液是其黏度為極重要之故，因而作成將樹脂液保持在塗佈環境相當時間，或放在可保溫，可調溫的容器，使得樹脂液的黏度被保持在一定較佳。又，樹脂液是使用塗佈時黏度4Pa．s~54Pa．s者。[Method of Coating Resin] First, the resin liquid is applied in a liquid state before the resin is cured in a state in which the resin is dissolved in a solvent, that is, in a liquid state, the coating is performed by a spiral dispersion. The dispenser 400 used for the dispersion is composed of a resin container 440 that stores a resin liquid, a spiral 410 for supplying a resin, a nozzle 430 that is coupled to the front end portion of the container, a resin supply injector 420, and the like (please refer to FIG. 6). The resin liquid is supplied to the inner lead by the spiral 410, and the nozzle 430 is sequentially moved toward the adjacent direction of the inner lead to apply the resin liquid. At this time, the resin liquid is applied to the back surface of the surface on which the wire bonding is performed, while avoiding the surface to be subjected to wire bonding. This is because when the resin liquid is applied to the wire bonding surface, the thin wires and the inner leads which hinder the wire bonding work are followed, and the electric resistance at the wire bonding points is increased, and this is avoided. The resin liquid is extremely important in its viscosity, so that the resin liquid is kept in the coating environment for a considerable period of time, or placed in a container that can be kept warm and temperature-adjusted, so that the viscosity of the resin liquid is kept relatively good. In addition, the resin liquid is 4Pa when used for coating. s~54Pa. s.

在本發明中，以螺旋式散佈進行樹脂液的塗佈。在專利文獻8記載著藉由分配器進行塗佈樹脂液的情形。在專利文獻8中，藉由空氣壓擠出樹脂液，而將樹脂液塗佈在引線框如第7圖所示地，當以空氣壓擠出樹脂液，則在開始樹脂液的擠出時液滴變大，而在結束供應時，有液滴擴展樹脂液必需以上的問題。若樹脂液的黏度高，則開始樹脂液的擠出時的液滴變更大，又，結束樹脂液供應時的擴 展也變大。亦即，在開始點，終端點及開始點與終端點相交的連結點的各點上，塗佈寬度產生變化。如此地，當在樹脂的塗佈寬度上產生變化，則樹脂塗佈引線框的引線前端，而在固定後切斷內部引線的前端連結部的情形，在該塗佈寬度變大的部位，如第9圖所示地，會引起樹脂474會覆蓋在內部引線切斷線A－A，而在切斷時產生樹脂凹痕附著等的不方便的問題。In the present invention, the coating of the resin liquid is carried out in a spiral manner. Patent Document 8 describes a case where a resin liquid is applied by a dispenser. In Patent Document 8, the resin liquid is extruded by air pressure, and the resin liquid is applied to the lead frame as shown in Fig. 7. When the resin liquid is extruded by air pressure, when the resin liquid is extruded, the resin liquid is extruded. The droplets become large, and at the end of the supply, there is a problem that the droplets extend the resin liquid. When the viscosity of the resin liquid is high, the droplet change at the time of starting the extrusion of the resin liquid is large, and the expansion of the resin liquid supply is completed. The exhibition has also grown. That is, at the starting point, the coating width changes at each point of the joint point where the terminal point and the starting point intersect the terminal point. As described above, when a change occurs in the coating width of the resin, the lead end of the lead frame of the lead frame is applied to the resin, and the front end connecting portion of the inner lead is cut after the fixing, and the portion where the coating width becomes large is as As shown in Fig. 9, the resin 474 is caused to cover the inner lead cutting line A-A, which causes inconvenience in adhesion of resin dents during cutting.

對於此，在螺旋式散佈，螺旋進行旋轉而經噴嘴供應螺旋部的樹脂。又，若將螺旋的旋轉作成相反，則具有施以吸入因吸從噴嘴溢出的樹脂的特徵。如第8圖所示地，使用螺旋式分配器進行塗佈樹脂液時，在結束供應的時機施以回吸，則樹脂液是不會擴展，而可塗佈在所定位置。又，開始樹脂液供應時的液滴，是與空氣壓式的情形不相同，不會大大地膨脹，結果，塗佈在引線框上的樹脂液，是全面性地可塗佈成均勻狀態。亦即，在樹脂供應終端點，藉由施以吸入回收(吸入)出現在噴嘴前端的樹脂，而可得到均勻的塗佈寬度，因此，樹脂塗佈引線框的引線前端，固定後切斷內部引線的前端連結部時，藉由塗佈寬度為均勻，如第9圖所示地，不會引起樹脂474重複在內部引線切斷線A－A而在切斷時不會產生樹脂凹痕附著等的不方便的問題。在空氣式分配器，吸入是大致可能，惟當所塗佈的樹脂黏度成為10Pa．s以上，則事實上無法回流從噴嘴所供應的樹脂液。此點，在螺旋式分配器中不管樹脂液的黏度如何，藉由吸入可回流多餘地所供應的樹脂液。In this case, in the spiral dispersion, the spiral rotates to supply the resin of the spiral portion through the nozzle. Further, when the rotation of the spiral is reversed, there is a feature that the resin which is sucked and sucked from the nozzle is sucked. As shown in Fig. 8, when the resin liquid is applied by using a spiral type dispenser, when the suction is applied at the timing of ending the supply, the resin liquid is not spread and can be applied to a predetermined position. Further, the droplets at the time of starting the supply of the resin liquid are different from those in the case of the air pressure type, and do not greatly expand. As a result, the resin liquid applied to the lead frame can be uniformly applied in a uniform state. In other words, at the resin supply terminal, the resin present at the tip end of the nozzle is suction-collected (inhaled) to obtain a uniform coating width. Therefore, the lead end of the lead of the resin coated lead frame is fixed and then cut inside. When the front end connecting portion of the lead wire is uniform, the coating width is uniform, and as shown in Fig. 9, the resin 474 is not caused to be repeated on the inner lead cutting line A-A, and resin dent adhesion does not occur at the time of cutting. Inconvenient problems. In air dispensers, inhalation is generally possible, except when the viscosity of the applied resin is 10 Pa. Above s, it is virtually impossible to reflow the resin liquid supplied from the nozzle. At this point, in the spiral dispenser, irrespective of the viscosity of the resin liquid, the resin liquid supplied by the excess can be recirculated by suction.

如前所述地，一般晶片銲墊支撐桿與內部引線之間的間隔的大小，是成為比內部引線間的間隔的大小還大。此為在半導體裝配工程中，用以防止晶片銲墊或鄰接的內部引線等振動而互相地短路。一方面本發明是以樹脂固定內部引線前端部的引線框。因此，引線框本身為被固定之故，因而在半導體裝置裝配工程中，晶片銲墊或鄰接的內部引線等不會振動或至少減小振動。如此可將晶片銲墊支撐桿與內部引線之間的間隔及內部引線間的間隔作成相同。藉由將晶片銲墊支撐桿與內部引線之間的間隔及內部引線間的間隔作成相同，以一筆書寫的要領可塗佈樹脂，而可縮短樹脂液的塗佈時間，而對提昇生產性有用。As described above, the size of the gap between the wafer pad support bar and the inner lead is generally larger than the size of the space between the inner leads. This is to short-circuit each other in the semiconductor assembly process to prevent vibration of the wafer pads or adjacent internal leads. In one aspect, the present invention is a lead frame in which a front end portion of an inner lead is fixed by a resin. Therefore, the lead frame itself is fixed, so that the wafer pad or the adjacent inner leads and the like do not vibrate or at least reduce vibration in the semiconductor device assembly process. In this way, the spacing between the wafer pad support bar and the inner leads and the spacing between the inner leads can be made identical. By making the spacing between the wafer pad support bar and the inner lead and the spacing between the inner leads the same, the resin can be applied in a single writing manner, and the coating time of the resin liquid can be shortened, which is useful for improving productivity. .

如第18圖所示地，在內部引線與晶片銲墊支撐桿之間的間隔及內部引線間的間隔的比率超過1.14時，則將樹脂液塗佈於內部引線與晶片銲墊支撐桿之間的間隙的位置及塗佈於內部引線間的間隙的位置作成偏離。這時候，欲將樹脂液塗佈於內部引線整體之際，成為分成4次塗佈在每一晶片銲墊支撐桿。在空氣壓方式的散佈，在塗佈開始時與結束時，樹脂液的液滴變大之故，因而樹脂液的液滴變大的部位至少成為4部位，由樹脂液的均勻塗佈的觀點，問題變更大。此點，在螺旋式散佈，塗佈開始時與結束時的樹脂液的液滴是不會變大之故，因而在內部引線與晶片銲墊支撐桿之間的間隔及內部引線間的間隔的比率為超過1.14時而將樹脂液分成4次進行塗佈時，也可均勻地塗佈內部引線所有全面。As shown in Fig. 18, when the ratio of the interval between the inner lead and the wafer pad support bar and the interval between the inner leads exceeds 1.14, the resin liquid is applied between the inner lead and the wafer pad support bar. The position of the gap and the position of the gap applied between the inner leads are deviated. At this time, when the resin liquid is applied to the entire inner lead, it is applied to each of the wafer pad support bars in four times. In the air pressure type, the droplets of the resin liquid become larger at the start and end of the application, and therefore, the portion where the droplets of the resin liquid become large is at least four portions, and the uniform coating of the resin liquid is used. The problem has changed a lot. At this point, in the spiral dispersion, the droplets of the resin liquid at the start and end of the coating do not become large, so the interval between the inner lead and the wafer pad support rod and the interval between the inner leads are When the ratio is more than 1.14 and the resin liquid is applied in four times, the inner leads can be uniformly coated.

以下，針對於內部引線間的間隔，內部引線與晶片銲墊支撐桿之間的間隔，從配置於內部引線間的間隙的樹脂框架側的前端緣一直到配置於內部引線與晶片銲墊支撐桿之間的間隙的樹脂框架中心側的前端緣為止的距離的測定方法、樹脂液的黏度的測定方法、內部引線的剛性的測定方法、引線接合性的測定方法、引線間樹脂的接著強度的測定方法、引線框彎曲強度的測定方法加以說明。Hereinafter, for the interval between the internal leads, the interval between the inner lead and the wafer pad support bar is from the front end edge of the resin frame side disposed in the gap between the inner leads to the inner lead and the wafer pad support bar Method for measuring the distance from the front end edge of the resin frame center side between the gaps, the method for measuring the viscosity of the resin liquid, the method for measuring the rigidity of the inner lead, the method for measuring the wire bonding property, and the measurement of the bonding strength between the leads The method and the method for measuring the bending strength of the lead frame will be described.

〔間隔等的測定方法］ 間隔等的測定是使用金屬顯微鏡(日本尼康公司所製模型：MM－60)進行。在此，針對於測定內部引線間的間隔La，內部引線與晶片銲墊支撐桿之間的間隙Ld、從內部引線的最前端緣一直到配置於內部引線間的間隙的樹脂框架中心側的前端緣為止的距離Ls、從配置於內部引線間的間隙的樹脂框架側的前端緣一直到配置於內部引線與晶片銲墊支撐桿之間的間隙的樹脂框架中心側的前端緣為止的距離Ld的方法加以說明。又，所測定的面是如前所述地施以引線接合的面。[Measurement method of interval, etc.] The measurement of the interval or the like was carried out using a metal microscope (model: MM-60, manufactured by Nikon Corporation, Japan). Here, for measuring the interval La between the internal leads, the gap Ld between the inner lead and the wafer pad support rod, and the front end of the resin frame center side from the foremost edge of the inner lead to the gap disposed between the inner leads The distance Ls from the edge, the distance Ld from the front end edge of the resin frame side disposed in the gap between the inner leads to the front end edge of the center side of the resin frame disposed in the gap between the inner lead and the wafer pad support rod The method is explained. Further, the surface to be measured is a surface to which wire bonding is applied as described above.

在具有可動台的金屬顯微鏡的台上，固定引線框，而以倍率20倍將透鏡內的刻度(十字線)的一邊，如第10圖所示地，對準於內部引線的邊H－H’(或K－K’)，並將十字線的另一邊，對準於所配置的樹脂的框架中心側的彎月面R，進行計測內部引線間F－F’的長度(FF’)。同樣地，對準於所配置的樹脂的框架側的彎月面R’而進行計測 J－J’的長度(JJ’)。又，以FF’與JJ’的平均值(La＝(FF’＋JJ’)/2)作為內部引線間的間隔La。又，以顯微鏡附屬的數位計數器(日本尼康公司所製模型：SC－213)讀取刻度移動的移動量，而由其移動量求出長度。晶片銲墊支撐桿的開縫狀開口部的寬度，也作成同樣被測定。Fix the lead frame on the stage of the metal microscope with the movable table, and align the side of the scale (crosshair) in the lens at the magnification of 20 times, as shown in Fig. 10, to the side of the inner lead H-H. '(or K-K'), and the other side of the crosshair is aligned with the meniscus R on the center side of the frame of the disposed resin, and the length (FF') of the inner lead F-F' is measured. Similarly, measurement is performed by aligning the meniscus R' on the frame side of the disposed resin. The length of J-J' (JJ'). Further, the average value (La = (FF' + JJ') / 2) of FF' and JJ' is taken as the interval La between the internal leads. Further, the amount of movement of the scale movement was read by a digital counter attached to a microscope (model: SC-213, manufactured by Nikon Corporation, Japan), and the length was obtained from the amount of movement. The width of the slit-like opening of the wafer pad support bar was also measured in the same manner.

作成同樣，在具有可動台的金屬顯微鏡的台上，固定引線框，而以倍率20倍將透鏡內的刻度(十字線)的一邊，如第10圖所示地，對準於鄰接於晶片銲墊支撐桿的內部引線的邊I－I’，並將十字線的另一邊，對準於所配置的樹脂的框架中心側的彎月面R，進行計測從內部引線一直到晶片銲墊支撐桿為止的Y－Y’的長度(YY’)。同樣地，對準於所配置的樹脂的框架側的彎月面R’而進行計測從內部引線一直到晶片銲墊支撐桿為止的Z－Z’的長度(ZZ’)。又，以YY’與ZZ’的平均值(Ld＝(YY’＋ZZ’)/2)作為內部引線與晶片銲墊支撐桿之間的間隔Ld。又，同樣地，以顯微鏡附屬的數位計數器(日本尼康公司所製模型：SC－213)讀取刻度移動的移動量，而由其移動量求出長度。In the same manner, the lead frame is fixed on a stage of a metal microscope having a movable table, and one side of the scale (cross line) in the lens is aligned with the wafer welding at a magnification of 20 times as shown in FIG. Pad the side I-I' of the inner lead of the support bar, and align the other side of the crosshair to the meniscus R of the center side of the frame of the disposed resin, and measure from the inner lead all the way to the wafer pad support bar The length of Y-Y' (YY'). Similarly, the length (ZZ') of Z-Z' from the inner lead to the wafer pad support rod is measured in alignment with the meniscus R' on the frame side of the disposed resin. Further, the average value (Ld = (YY' + ZZ') / 2) of YY' and ZZ' is taken as the interval Ld between the inner lead and the wafer pad support rod. In the same manner, the amount of movement of the scale movement is read by a digital counter attached to the microscope (model: SC-213, manufactured by Nikon Corporation, Japan), and the length is obtained from the amount of movement.

在具有可動台的金屬顯微鏡的台上，固定引線框，而以倍率20倍將透鏡內的刻度(十字線)的一邊，如第10圖所示地，對準於內部引線的邊H－H’，並將十字線的另一邊，從H點一直移動到配置於內部引線間的間隙的樹脂框架中心側的前端緣的彎月面的最低位置R為止時的移動量HR，又，作成同樣，將透鏡內的刻度(十字線)的一 邊對準於K－K’，亦即，對準於內部引線的另一邊，而將從K點移動至R點時的移動量作為KR，並將HR與KR的移動量的平均值(Ls＝(HR＋KR)/2)，作為從內部引線的最前端緣一直到配置於內部引線間的間隙的樹脂的框架中心側的前端緣為止的距離Ls。Fix the lead frame on the stage of the metal microscope with the movable table, and align the side of the scale (crosshair) in the lens at the magnification of 20 times, as shown in Fig. 10, to the side of the inner lead H-H. ', and the movement amount HR when the other side of the crosshair is moved from the H point to the lowest position R of the meniscus of the front end edge of the resin frame center side disposed in the gap between the inner leads, and the same , one of the scales (crosshairs) inside the lens Aligned to K-K', that is, aligned to the other side of the inner lead, and the amount of movement when moving from point K to point R is taken as KR, and the average amount of movement of HR and KR (Ls) = (HR + KR) / 2) is a distance Ls from the foremost edge of the inner lead to the front end edge of the center side of the frame of the resin disposed in the gap between the inner leads.

在具有可動台的金屬顯微鏡的台上，固定引線框，而以倍率20倍將透鏡內的刻度(十字線)的一邊，如第11圖所示地，重疊於鄰接在晶片銲墊支撐桿的內部引線一邊N－N’，並將十字線的另一邊從配置於內部引線與晶片銲墊支撐桿之間的間隙的樹脂框架中心側的彎月面S移動到配置於內部引線間的間隙的樹脂框架側的彎月面X，而由其移動距離求出從配置於內部引線間的間隙的樹脂框架側的前端緣一直到配置於內部引線與晶片銲墊支撐桿之間的間隙的樹脂框架中心側的前端緣為止的距離Lb。Fixing the lead frame on a stage of a metal microscope having a movable table, and superimposing one side of the scale (cross line) in the lens at a magnification of 20 times, as shown in FIG. 11, overlapping the support pad adjacent to the wafer pad The inner lead is N-N', and the other side of the crosshair is moved from the meniscus S on the center side of the resin frame disposed in the gap between the inner lead and the wafer pad support bar to the gap disposed between the inner leads. The meniscus X on the resin frame side, and the resin frame from the front end edge of the resin frame side disposed in the gap between the inner leads to the gap between the inner lead and the wafer pad support rod is obtained from the moving distance The distance Lb from the front end edge of the center side.

在第10圖中，作成同樣，將透鏡內的刻度(十字線)的一邊，重疊於內部引線的邊H－H’(或是K－K’)，並將十字線的另一邊從配置於內部引線間的間隙的樹脂框架中心側的前端緣的彎月面的最低位置R一直移動到同樹脂框架的前端緣的彎月面的最低位置R’為止時的移動量作為RR’，該RR’成為配置於內部引線間的樹脂長度。In Fig. 10, in the same manner, one side of the scale (cross line) in the lens is superimposed on the side H-H' (or K-K') of the inner lead, and the other side of the cross line is arranged from The amount of movement when the lowest position R of the meniscus of the front end edge of the resin frame center side of the gap between the inner leads is moved to the lowest position R' of the meniscus of the front end edge of the resin frame as RR', the RR 'Become the length of the resin disposed between the internal leads.

又，在第11圖中，作成同樣，將透鏡內的刻度(十字線)的一邊，重疊於內部引線的邊N－N’，並將十字線的另一邊從配置於內部引線與晶片銲墊支撐桿之間的間隙的樹脂框架中心側的前端緣的彎月面的最低位置S一直移 動到同樹脂框架的前端緣的彎月面的最低位置S’為止時的移動量作為SS’，該SS’成為配置於內部引線與晶片銲墊支撐桿之間的樹脂長度。Further, in Fig. 11, in the same manner, one side of the scale (cross line) in the lens is superposed on the side N-N' of the inner lead, and the other side of the cross line is placed on the inner lead and the wafer pad. The lowest position S of the meniscus at the front end edge of the center side of the resin frame at the gap between the support rods is shifted all the time The amount of movement when moving to the lowest position S' of the meniscus of the front end edge of the resin frame is SS', which is the resin length disposed between the inner lead and the wafer pad support rod.

〔黏度的測定方法］ 以下，針對於樹脂液的黏度測定方法加以說明。作為測定機器使用B型黏度計(BROOKFIELD公司所製模型：HBDV－II＋)進行測定。又，心軸是使用No.14，測定溫度是因應於需要被決定，使得樹脂液的溫度置放至達到平衡於其溫度之後，為了測定而在收容樹脂液的容器(實用杯)的外套進行循環所定溫度的溫水，熱媒等，調節實用杯成為測定溫度。黏度測定的順序是如以下。首先，將樹脂置放3小時以上在測定溫度的環境。俾將樹脂液的溫度作為測定溫度。一方面，在實用杯的外套循環溫水或熱媒，維持成為測定溫度。採取欲測定的樹脂液2.5ml投進實用杯，確認沒有樹脂液的氣泡，在B型黏度計裝設所定的心軸No.14，以20rpm的旋轉速度在樹脂液中旋轉樹脂液中，而將開始旋轉3分鐘後的數值作為樹脂液的黏度值。[Method for measuring viscosity] Hereinafter, a method of measuring the viscosity of the resin liquid will be described. The measurement was carried out using a B-type viscometer (model: BBD, manufactured by BROOKFIELD Co., Ltd.: HBDV-II+). In addition, the mandrel is No. 14, and the measurement temperature is determined in accordance with the necessity, and the temperature of the resin liquid is placed until the temperature is balanced, and the measurement is performed on the outer casing of the container (utility cup) containing the resin liquid. The temperature of the specified temperature, the heat medium, etc., adjust the utility cup to the measured temperature. The order of viscosity measurement is as follows. First, the resin was placed in an environment where the temperature was measured for 3 hours or more. The temperature of the resin liquid is taken as the measurement temperature. On the one hand, in the coat of the utility cup, the circulating warm water or the heat medium is maintained at the measured temperature. 2.5 ml of the resin liquid to be measured was placed in a utility cup, and it was confirmed that there was no bubble of the resin liquid, and the mandrel No. 14 set in the B-type viscometer was rotated in the resin liquid at a rotation speed of 20 rpm. The value after the start of rotation for 3 minutes was taken as the viscosity value of the resin liquid.

〔內部引線的剛性的測定方法］ 如第24圖所示地，內部引線的剛性測定是使用測定使用於半導體的裝配評價的細線強度或凸塊強度的剪力測試器，藉由測定進行將測定子510接觸於內部引線514前端而移動內部引線514 30 μm時的應力(g)。測定對於 配置於內部引線間的間隙的樹脂512距內部引線前端緣的距離，亦即樹脂固定距離L的應力。[Method for measuring the rigidity of the inner lead] As shown in Fig. 24, the rigidity measurement of the inner lead is a shear force tester that measures the fine line strength or the bump strength used for the assembly evaluation of the semiconductor, and the measuring member 510 is brought into contact with the front end of the inner lead 514 by measurement. The internal lead 514 is moved at a stress (g) of 30 μm. Determination for The distance between the resin 512 disposed in the gap between the inner leads and the front end edge of the inner lead, that is, the stress at which the resin is fixed by the distance L.

〔引線接合性的測定方法］ 首先，在第26圖說明對引線接合性影響的引線框的剛性與超音波振動的關係。傳統以膠帶固定的內部引線，是從膠帶固定部一直到內部引線前端為止的距離較長之故，因而在與超音波的振動方向垂直的方向的引線P點，對於超音波振動的接合面的剛性小，而超音波能量的損耗大。又，在與超音波振動平行的引線V點，對於超音波振動的接合面的剛性大，而超音波能量的損耗小。因此，在各引線的接合面個別地需要最適用的接合條件。一方面，以樹脂固定引線前端的內部引線，是內部引線的前端部以樹脂固定而連結著各內部引線之故，因而在所有接合面都均質，且剛性大，超音波能量的損耗小。因此在均勻條件下成為可接合。[Method for Measuring Wire Bonding Property] First, the relationship between the rigidity of the lead frame and the ultrasonic vibration which affects the wire bonding property will be described in Fig. 26. Conventionally, the inner lead fixed by the tape has a long distance from the tape fixing portion to the front end of the inner lead, and therefore the lead P point in the direction perpendicular to the vibration direction of the ultrasonic wave is the joint surface for the ultrasonic vibration. The rigidity is small, and the loss of ultrasonic energy is large. Further, at the point V of the lead parallel to the ultrasonic vibration, the rigidity of the joint surface for the ultrasonic vibration is large, and the loss of the ultrasonic energy is small. Therefore, the most suitable bonding conditions are individually required on the bonding faces of the respective leads. On the other hand, the inner lead of the lead end of the lead is fixed by a resin, and the inner lead of the inner lead is fixed by resin and the inner lead is connected. Therefore, the joint is uniform on all the joint surfaces, and the rigidity is large, and the loss of ultrasonic energy is small. Therefore, it becomes bondable under uniform conditions.

引線接合性的評價是如下地進行。亦即，在溫度170℃，負載80g，超音波時間10ms的引線接合條件下，對內部引線前端部進行實際的引線接合，將從配置於內部引線間的間隙的樹脂框架中心側的前端位置一直到施以引線接合的位置為止的距離(從樹脂一直到引線接合位置為止的距離)作為M〔請參照第27(b)圖］，而以求出M及配置於內部引線間的間隙的樹脂框架中心側的超音波輸出與引線接合連接率的關係的方法所進行。亦即，引線接合 的作業，為對於從各樹脂固定一直到引線接合位置為止的距離(M)進行20次，而求出針對於各超音波輸出滿足地進行引線接合的比率(引線接合連接率)。The evaluation of the wire bonding property was carried out as follows. In other words, at the temperature of 170 ° C, a load of 80 g, and a supersonic time of 10 ms, the actual lead wire bonding is performed on the inner lead tip end portion, and the tip end position on the center side of the resin frame disposed from the gap between the inner leads is always maintained. The distance to the position where the wire bonding is applied (the distance from the resin to the wire bonding position) is M (see FIG. 27(b)), and the resin which is M and the gap disposed between the internal leads is obtained. The method of the relationship between the ultrasonic output on the center side of the frame and the wire bonding connection ratio is performed. That is, wire bonding In the work, the distance (M) from the fixing of each resin up to the wire bonding position was performed 20 times, and the ratio (wire bonding connection ratio) at which the wire bonding was satisfactorily performed for each ultrasonic wave output was obtained.

首先，引線接合是在超音波振動的影響大的位置P進行(第27圖)。引線接合的位置Bp是在距配置於內部引線間的間隙的樹脂的框架中心側的前端有M距離處進行。作為M值選定0、0.3mm及0.6mm。之後，在超音波振動損耗最大的位置P，大約中間的U點，及超音波振動損耗最小的V點的各位置施以引線接合(參照第29圖)，作成同樣，進行評價引線接合性。First, wire bonding is performed at a position P where the influence of ultrasonic vibration is large (Fig. 27). The position Bp of the wire bonding is performed at a distance of M from the front end of the center side of the frame of the resin disposed in the gap between the inner leads. 0, 0.3 mm, and 0.6 mm were selected as M values. Thereafter, wire bonding is performed at each position P where the ultrasonic vibration loss is the largest, approximately at the intermediate U point, and at the V point where the ultrasonic vibration loss is the smallest (see Fig. 29), and the wire bonding property is evaluated in the same manner.

〔引線間樹脂的接著強度的測定方法］ 使用剪力測試器(DAGE公司所製：SERIES－4000)及測力器(DAGE公司所製：BS－250 MAX.250g)，如第39圖所示地以玻璃板夾住固定引線框，使用剪力測試器，在對引線直角方向施以力量，來測定引線框斷裂時的力量。該斷裂時的力量(g)為引線間樹脂的接著強度。[Method for Measuring the Bond Strength of Resin between Leads] Using a shear tester (made by DAGE: SERIES-4000) and a load cell (made by DAGE: BS-250 MAX.250g), the fixed lead frame was clamped with a glass plate as shown in Fig. 39, and used. The shear tester applies force to the right angle of the lead to determine the force at which the lead frame breaks. The strength (g) at the time of the fracture is the bonding strength of the resin between the leads.

〔引線框彎曲強度的測定方法］ 使用數位測力計(日本今田公司所製：MODEL－DPSS 5T)，進行測定引線框彎曲強度。如第40圖所示地，測定是將引線框的中心對準於平台的邊緣而以膠帶固定之後，降下固定於測高規的數位測力計而在彎曲5mm的位置，測定彎曲所需的負載。測定是進行3次而以此些的最大 值，作為引線框彎曲強度。[Method for measuring bending strength of lead frame] The bending strength of the lead frame was measured using a digital dynamometer (MODEL-DPSS 5T, manufactured by Nada, Japan). As shown in Fig. 40, the measurement is performed by aligning the center of the lead frame with the edge of the platform and fixing it with a tape, lowering the digital dynamometer fixed to the altimeter and measuring the position required for bending at a position of 5 mm. load. The measurement is performed 3 times and the maximum of these The value is used as the bending strength of the lead frame.

〔對於細線擺動的效果］ 依傳統的膠帶的固定內部引線前端部，尤其是在細線條數多時則在密封樹脂之際，會接觸於細線所鄰接的引線而有短路的問題。依膠帶的固定時，成為在引線接合時接近於夾具的場所，亦即，在距引線前端離開的位置進行引線接合，而細線必然地變長，如第41圖所示地，樹脂密封之際，物線接觸於鄰接的引線而容易短路。一方面，依樹脂的固定時，引線前端部的剛性高之故，因而在接近於引線前端的位置可進行引線接合，因此細線是變短，而在樹脂密封之際，如第41圖所示地，細線接觸於鄰接的引線而短路的問題是不會發生，或至少大幅度地減輕。[For the effect of thin line swing] According to the conventional tape, the front end portion of the inner lead is fixed, and particularly when the number of thin lines is large, the resin is in contact with the lead adjacent to the thin wire and there is a problem of short circuit. When fixing the tape, it is a place close to the jig at the time of wire bonding, that is, wire bonding is performed at a position away from the leading end of the lead, and the thin wire is inevitably lengthened, as shown in Fig. 41, at the time of resin sealing The object line is in contact with adjacent leads and is easily short-circuited. On the one hand, when the resin is fixed, the rigidity of the leading end portion of the lead is high, so that wire bonding can be performed at a position close to the leading end of the lead, so that the thin wire is shortened, and when the resin is sealed, as shown in Fig. 41 The problem that the thin wires are short-circuited to the adjacent leads is not to occur, or at least greatly reduced.

〔實施例1］[Example 1]

以下，依據實施例進行說明本發明。Hereinafter, the present invention will be described based on examples.

〔所使用的內部引線，樹脂的說明］ 準備銅合金，板厚0.125mm及0.150mm，事先切斷分離內部引線前端部的引線間隔為75 μm至300 μm的內部引線前端連結部的引線框。在此些引線框以所謂一筆書寫的要領，將引線框的周圍，為塗佈周長40mm，塗佈寬度300 μm，而樹脂的塗佈量是選定作成塗佈寬度為300 μm，進行塗佈樹脂液。樹脂的塗佈是以如前所述的要領，使 用螺旋式分配器所進行。樹脂液的塗佈是在室溫(23℃)進行。所塗佈的樹脂液是在氧氣濃度5%以下的運送機爐加熱205℃ 80秒鐘使之硬化，而固裝在引線間。所使用的樹脂是由環氧樹脂及潛在性硬化劑所成的一液型熱硬化性樹脂，具體上，如以下所得到者。亦即，反應環氧樹脂(環氧當量185g/當量，全氯含有量1400ppm)1當量與2－甲基－咪唑0.7當量而得到硬化劑。粉碎該硬化劑，作成平均粒徑2.4 μm的粒子。藉由將該粒子狀硬化劑100重量份，水1.5重量部，甲苯撐二異氰酸酯7重量部添加於環氧樹脂200重量部使之反應而得到潛在性硬化劑。在該潛在性硬化劑100重量部添加環氧樹脂220重量部，為環氧樹脂及潛在性硬化劑所成的一液型熱硬化性樹脂。[Internal lead used, description of resin] A copper alloy having a thickness of 0.125 mm and 0.150 mm was prepared, and the lead frame of the inner lead front end connection portion in which the lead interval at the leading end portion of the inner lead was separated from 75 μm to 300 μm was cut in advance. In the lead frame, the lead frame is coated with a circumference of 40 mm and a coating width of 300 μm, and the coating amount of the resin is selected to be a coating width of 300 μm for coating. Resin solution. The coating of the resin is based on the method described above. It is carried out with a screw dispenser. The coating of the resin liquid was carried out at room temperature (23 ° C). The applied resin liquid was hardened by heating at 205 ° C for 80 seconds in a conveyor furnace having an oxygen concentration of 5% or less, and was fixed between the leads. The resin to be used is a one-pack type thermosetting resin composed of an epoxy resin and a latent curing agent, and specifically, as obtained below. That is, 1 equivalent of a reaction epoxy resin (epoxy equivalent: 185 g/eq, total chlorine content: 1400 ppm) and 0.7 equivalent of 2-methyl-imidazole were used to obtain a curing agent. The hardener was pulverized to prepare particles having an average particle diameter of 2.4 μm. 100 parts by weight of the particulate hardener, 1.5 parts by weight of water, and 7 parts by weight of tolylene diisocyanate were added to 200 parts by weight of the epoxy resin to react to obtain a latent curing agent. A one-component thermosetting resin composed of an epoxy resin and a latent curing agent was added to the weight of 100 parts by weight of the latent curing agent.

〔引線間的間隔相等時的樹脂塗佈］ 最初，針對於將樹脂液以室溫(23℃)塗佈在間隔相等的引線框的內部引線上的情形的例子加以說明。如第1圖所示地，當將樹脂液250塗佈在內部引線221上或內部引線221間的間隙(第1A圖)，則該樹脂液是被展延在內部引線221間的間隙，內部引線221上的樹脂液的量是逐漸地減少(第1B圖)，在最後，樹脂液是控制在內部引線221間的間隙(第1C圖)。將控制在內部引線間的間隙的樹脂液以252表示。如此，在塗佈樹脂液的內部引線的表面成為僅留下薄樹脂膜。藉由樹脂液的表面張力，考量樹脂液是被控制在內部引線間的間隙者。因此，在內 部引線間的間隔及內部引線與晶片銲墊支撐桿的間隔相等時，則在內部引線的前端部中，樹脂液是成為在內部引線間的間隙及內部引線與晶片銲墊支撐桿之間的間隙配置有相等的樹脂液的狀態。在該狀態，當硬化引線框的樹脂，則可得到以樹脂固定內部引線的前端部的引線框(表示於第4圖，第32圖)。樹脂液是在內部引線間的間隔與樹脂液的黏度關係，也有被保持在內部引線間的間隙，或是也有未被保持在內部引線間的間隙的情形。在特定的內部引線間的間隔與樹脂液黏度的範圍內，樹脂是被保持在內部引線間的間隙。又，樹脂液的黏度是會受到溫度影響之故，因而所塗佈的樹脂液是使用至少保管3小時在室內者。[Resin coating when the spacing between leads is equal] First, an example in which the resin liquid is applied to the inner leads of the lead frames having the same interval at room temperature (23 ° C) will be described. As shown in Fig. 1, when the resin liquid 250 is applied to the inner lead 221 or the gap between the inner leads 221 (Fig. 1A), the resin liquid is stretched in the gap between the inner leads 221, and the inside is The amount of the resin liquid on the lead 221 is gradually decreased (Fig. 1B), and finally, the resin liquid is controlled by the gap between the inner leads 221 (Fig. 1C). The resin liquid that controls the gap between the internal leads is indicated by 252. Thus, only the thin resin film is left on the surface of the inner lead of the coating resin liquid. By the surface tension of the resin liquid, it is considered that the resin liquid is controlled by the gap between the internal leads. Therefore, inside When the interval between the lead wires and the interval between the inner leads and the wafer pad support bars are equal, in the front end portion of the inner leads, the resin liquid is a gap between the inner leads and between the inner leads and the wafer pad support bars. The gap is provided with an equal state of the resin liquid. In this state, when the resin of the lead frame is cured, a lead frame (shown in Fig. 4, Fig. 32) in which the front end portion of the inner lead is fixed with a resin can be obtained. The resin liquid has a relationship between the interval between the internal leads and the viscosity of the resin liquid, and may be held in the gap between the internal leads or may be left in the gap between the internal leads. The resin is held in the gap between the inner leads within the range of the spacing between the specific inner leads and the viscosity of the resin liquid. Further, since the viscosity of the resin liquid is affected by the temperature, the resin liquid to be applied is used indoors for at least 3 hours.

將樹脂液塗佈於內部引線的間隙之際的樹脂液的黏度與內部引線間隔的關係表示於第31圖。第31圖是匯集調查以塗佈速度10mm/秒將樹脂塗佈成為樹脂液的塗佈寬度為300 μm時，樹脂液是否被保持在內部引線間的間隙，又，在塗佈後加熱而硬化樹脂之後，是否樹脂被保持在間隙的結果者。所塗佈的樹脂液是否被保持引線間，是依存於引線間的間隔大小。一般，隨著引線間的間隔變大，所塗佈的樹脂液是移動至鄰接的引線上，而無法被保持在引線間的間隙。又，在樹脂塗佈時即使被保持在引線間的間隔，而在加熱硬化時也使得樹脂液的黏度一旦降低之故，因而在該時候，被保持在引線間的間隔的樹脂液，局部地移動在引線上，而被認定完全無法被保持在引線間的間隔 的現象。在第31圖，「○」是表示樹脂液不會從引線間的間隙不會移動到相鄰的引線上而可將樹脂配置在引線間的間隙，在樹脂硬化後也配置在內部引線間的間隙的情形，「△」是表示在塗佈的時機被保持，惟在樹脂硬化時有移動於相鄰的引線上的部分，而無法完全地配置的情形，「×」是表示在開始塗佈的時機，樹脂液是被塗佈，惟在塗佈後樹脂液移動到相鄰的內部引線上，而樹脂是無法配置在引線間的間隙的情形。為了在樹脂確認引線框的保持性，以精密天秤測定塗佈樹脂液後的引線框的重量與樹脂硬化後的引線框的重量，調查該重量差。結果，在所有事例中，減重量是都在大約0.3%(相等於水分等的揮發分)，所塗佈的樹脂是熱硬化後也確認被保持在引線框的情形。The relationship between the viscosity of the resin liquid and the internal lead interval when the resin liquid is applied to the gap of the inner lead is shown in Fig. 31. Fig. 31 is a view showing whether or not the resin liquid is held in the gap between the inner leads when the resin is applied to the resin liquid at a coating speed of 10 mm/sec at a coating speed of 10 mm/sec, and is heated and hardened after coating. After the resin, whether the resin is kept in the gap is the result. Whether or not the applied resin liquid is held between the leads depends on the interval between the leads. Generally, as the interval between the leads becomes larger, the applied resin liquid moves to the adjacent leads and cannot be held in the gap between the leads. Further, even when the resin is applied, the resin solution is kept at the interval between the leads, and the viscosity of the resin liquid is lowered during the heat curing. Therefore, the resin liquid held at the interval between the leads is partially localized. Moved on the lead and was found to be completely incapable of being held between the leads The phenomenon. In Fig. 31, "○" indicates that the resin liquid does not move from the gap between the leads to the adjacent lead, and the resin can be placed in the gap between the leads, and is also disposed between the inner leads after the resin is cured. In the case of the gap, "△" indicates that the timing of coating is maintained, but the portion which is moved to the adjacent lead when the resin is cured is not completely disposed, and "x" indicates that the coating is started. At the timing, the resin liquid is applied, but after the coating, the resin liquid moves to the adjacent inner leads, and the resin is not disposed in the gap between the leads. In order to confirm the retention of the lead frame in the resin, the weight of the lead frame after coating the resin liquid and the weight of the lead frame after the resin was cured were measured by a precision balance, and the weight difference was examined. As a result, in all the cases, the weight loss was about 0.3% (equivalent to the volatile matter such as moisture), and the applied resin was confirmed to be held in the lead frame after the heat curing.

從第31圖，可知引線框的板厚125 μm，150 μm任何情形，或是樹脂液的黏度為至少4Pa．s以上，而引線間隔為160 μm以下的情形，也不管樹脂黏度，所謂以一筆書寫的要領所塗佈的樹脂液是被保持於引線間的間隙的情形，或是樹脂液的黏度為至少9.4Pa．s以上，而引線間隔為170 μm以下的情形，不管樹脂黏度，又，也不管在引線框的板厚，所謂以一筆書寫的要領所塗佈的樹脂液是被保持在引線間的間隙，而在樹脂硬化後也被保持在引線間的間隙。在此，所謂引線間的間隔是如前所述地，指在配置於引線間的間隙的樹脂的中間點所測定者。From Fig. 31, it can be seen that the thickness of the lead frame is 125 μm, 150 μm in any case, or the viscosity of the resin liquid is at least 4 Pa. s or more, and in the case where the lead interval is 160 μm or less, regardless of the resin viscosity, the resin liquid applied by the method of writing in one stroke is held in the gap between the leads, or the viscosity of the resin liquid is at least 9.4. Pa. s or more, and in the case where the lead interval is 170 μm or less, regardless of the resin viscosity, and regardless of the thickness of the lead frame, the resin liquid applied by the method of writing in one stroke is held in the gap between the leads, and It is also held in the gap between the leads after the resin is hardened. Here, the interval between the leads is measured as described above at the intermediate point of the resin disposed in the gap between the leads.

〔實施例2］[Example 2]

〔引線間的間隔不相同時樹脂液塗佈］[Solen solution coating when the spacing between leads is different]

一般的引線框是晶片銲墊支撐桿成為比內部引線還寬廣之故，因而內部引線與晶片銲墊支撐桿之間的間隔，是成為比內部引線間的間隔還寬廣。依據第12圖說明如此地在間隔不相同的引線框塗佈樹脂液的情形的樹脂的塗佈狀況。塗佈樹脂是依照實施例1，針對於樹脂液的黏度是4Pa．s及54Pa．s的兩者對於事先切斷分離銅合金，板厚0.125mm，內部引線前端部的內部引線間隔為75 μm至170 μm，內部引線與晶片銲墊支撐桿之間的間隔為75 μm至300 μm的內部引線前端連結部的引線框，將引線框的周圍，為塗佈周長40mm，塗佈寬度300 μm，而樹脂的塗佈量是選定所塗佈的樹脂液的寬度成為300 μm的量，以所謂一筆書寫的要領塗佈樹脂液。樹脂液250是在間隔相等的內部引線間，樹脂液是被保持在內部引線間的間隙，惟在間隔大的內部引線222，224與晶片銲墊支撐桿231之間，樹脂液是移動在內部引線間的間隙與晶片銲墊支撐桿231上。結果，樹脂液的配置狀態，是在內部引線間的間隙保持著樹脂液，惟在內部引線與晶片銲墊支撐桿之間的間隙，樹脂液是成為未被保持。In general, the lead frame is such that the wafer pad support bar is wider than the inner lead. Therefore, the gap between the inner lead and the wafer pad support bar is wider than the interval between the inner leads. The state of application of the resin in the case where the resin liquid is applied to the lead frames having different intervals as described above will be described based on Fig. 12 . The coating resin is in accordance with Example 1, and the viscosity for the resin liquid is 4 Pa. s and 54Pa. Both of the s are cut off the copper alloy in advance, the plate thickness is 0.125 mm, the inner lead spacing of the inner lead front end is 75 μm to 170 μm, and the interval between the inner lead and the wafer pad support bar is 75 μm to 300 μm. The lead frame of the inner lead terminal connecting portion has a coating circumference of 40 mm and a coating width of 300 μm around the lead frame, and the amount of the resin applied is such that the width of the applied resin liquid is 300 μm. The resin liquid is applied in a so-called one-stroke manner. The resin liquid 250 is between the inner leads of the same interval, and the resin liquid is held in the gap between the inner leads, but the resin liquid is moved inside between the inner leads 222, 224 and the wafer pad support rod 231 which are spaced apart from each other. The gap between the leads is on the wafer pad support bar 231. As a result, in the arrangement state of the resin liquid, the resin liquid is held in the gap between the internal leads, but the resin liquid is not held in the gap between the inner lead and the wafer pad support rod.

調查內部引線與晶片銲墊支撐桿之間的間隔對於內部引線間的間隔的比率及保持樹脂的關係，將其結匯集表示於表1及表2。表1是表示塗佈時的樹脂黏度為4Pa．s的情形，而表2是表示塗佈時的樹脂黏度為54Pa．s的情形 。變更對於內部引線間的間隔的內部引線與晶片銲墊支撐桿之間的間隔的比率及內部引線間的間隔，調查樹脂是否被保持在引線間的間隙者。由表1及表2，可知不管內部引線間的間隔，內部引線與晶片銲墊支撐桿之間的間隔對於內部引線間的間隔的比率為1.14以下，樹脂是硬化後也被保持在引線間的間隙。亦即，在內部引線與晶片銲墊支撐桿之間的間隔對於內部引線間的間隔的比率為1.14以下，則不管樹脂液的黏度，內部引線間的間隔，內部引線與晶片銲墊支撐桿之間的間隔，而以所謂一筆書寫的要領將樹脂液塗佈於內部引線間的間隙或內部引線間的間隙及內部引線與晶片銲墊支撐桿之間的間隙，就可配置樹脂，若該比率超過1.14，則無法以所謂一筆書寫的要領進行塗佈樹脂液，而樹脂是在內部引線間的間隙可配置樹脂，惟在內部引線與晶片銲墊支撐桿之間的間隙無法保持樹脂。又，表1，表2的符號「○」、「△」、「×」的意思，是與實施例1，第31圖的情形同樣。The ratio of the interval between the inner lead and the wafer pad support bar to the interval between the inner leads and the relationship between the holding resin were investigated, and the junctions were shown in Tables 1 and 2. Table 1 shows that the resin viscosity at the time of coating is 4 Pa. The case of s, and Table 2 indicates that the resin viscosity at the time of coating is 54 Pa. s case . The ratio of the interval between the inner lead and the wafer pad support rod between the inner leads and the interval between the inner leads were changed, and it was investigated whether or not the resin was held in the gap between the leads. From Tables 1 and 2, it is understood that the ratio of the interval between the inner lead and the wafer pad support bar to the interval between the inner leads is 1.14 or less regardless of the interval between the inner leads, and the resin is also held between the leads after hardening. gap. That is, the ratio of the spacing between the inner leads and the wafer pad support bars to the spacing between the inner leads is 1.14 or less, regardless of the viscosity of the resin liquid, the spacing between the inner leads, the inner leads and the wafer pad support bars. Between the intervals, the resin can be applied to the gap between the internal leads or the gap between the internal leads and the gap between the internal leads and the wafer pad support bar in a so-called one-stroke manner, and the resin can be disposed. When it exceeds 1.14, the resin liquid cannot be applied in a so-called one-stroke manner, and the resin can dispose the resin in the gap between the inner leads, but the resin cannot be held in the gap between the inner lead and the wafer pad support rod. Further, the symbols "○", "△", and "X" in Table 1 and Table 2 are the same as those in the first embodiment and the thirty-first embodiment.

樹脂液黏度4Pa．s Resin viscosity 4Pa. s

樹脂液黏度54Pa．s Resin liquid viscosity 54Pa. s

即使引線間隔(包含內部引線間的間隔及內部引線與晶片銲墊支撐桿之間的間隔)為170 μm以下，若內部引線與晶片銲墊支撐桿之間的間隔對於內部引線間的間隔的比率超過1.14，則以所謂一筆書寫的要領塗佈樹脂液，而在內部引線與晶片銲墊支撐桿之間的間隙無法保持樹脂。在這時候，如第5圖及第33圖所示地，僅在內部引線間隙塗佈樹脂，並配置而可加以保持。又，內部引線與晶片銲墊支撐桿之間的間隔對於內部引線間的間隔的比率為1.14以下，以所謂一筆書寫的要領塗佈樹脂液，而在內部引線與晶片銲墊支撐桿之間的間隙也可保持樹脂之故，因而如第4圖及第32圖所示地，可將樹脂配置在內部引線間的間隙及內部引線與晶片銲墊支撐桿之間的間隙。當然，在內部引線與晶片銲墊支撐桿之間的間隔對於內部引線間的間隔的比率為1.14以下的情形，也如第5圖及第33圖所示地，在內部引線與晶片銲墊支撐桿之間的間隙也可未保持樹脂。為了確認樹脂在引線框的保持性，以精密天 秤測定塗佈樹脂液後的引線框的重量與樹脂硬化後的引線框的重量，來調查其重量。結果，在所有事例中，確認重量減少都在0.3%左右，而所塗佈的樹脂是熱硬化後也被保持在引線框的情形。Even if the lead spacing (including the spacing between the inner leads and the spacing between the inner leads and the wafer pad support bars) is 170 μm or less, if the ratio of the spacing between the inner leads and the wafer pad support bars to the spacing between the inner leads When it exceeds 1.14, the resin liquid is applied in a so-called one-stroke manner, and the resin is not held in the gap between the inner lead and the wafer pad support rod. At this time, as shown in Fig. 5 and Fig. 33, the resin is applied only to the inner lead gap, and is disposed and held. Moreover, the ratio of the interval between the inner lead and the wafer pad support bar to the space between the inner leads is 1.14 or less, and the resin liquid is applied in a so-called one-stroke manner, and between the inner lead and the wafer pad support bar. The gap can also hold the resin. Therefore, as shown in FIGS. 4 and 32, the resin can be disposed in the gap between the internal leads and the gap between the internal leads and the wafer pad support rod. Of course, in the case where the ratio of the interval between the inner lead and the wafer pad support bar to the interval between the inner leads is 1.14 or less, as shown in FIGS. 5 and 33, the inner lead and the wafer pad are supported. The gap between the rods may also not retain the resin. In order to confirm the retention of the resin in the lead frame, to precise days The weight of the lead frame after the resin liquid was applied and the weight of the lead frame after the resin was cured were measured for the weight. As a result, in all the cases, it was confirmed that the weight reduction was about 0.3%, and the applied resin was also held in the lead frame after the heat curing.

〔實施例3］[Example 3]

〔引線間的間隔比率為超過1.14時的樹脂塗佈］ 如在實施例2所示地，在引線間隔為170 μm以下，而內部引線與晶片銲墊支撐桿之間的間隔對於內部引線間的間隔的比率為1.14時，若將樹脂液以一筆書寫的要領塗佈在內部引線時，則在內部引線與晶片銲墊支撐桿之間的間隙未配置著樹脂，而成為僅在內部引線間的間隙配置有樹脂卻被保持著。然而，這時候，在內部引線間的間隔及內部引線與晶片銲墊支撐桿之間的間隔為170 μm(樹脂黏度9.4Pa．s以上)以下，或是在160 μm(樹脂黏度4Pa．s以上)，藉由變更將樹脂液塗佈於內部引線與晶片銲墊支撐桿之間的間隙的位置及塗佈於內部引線間的間隙的位置，而可將樹脂配置並保持在內部引線間的間隙及內部引線與晶片銲墊支撐桿之間的間隙。以下說明該實施例。[Resin coating when the ratio between the leads is more than 1.14] As shown in Embodiment 2, when the lead interval is 170 μm or less, and the ratio of the interval between the inner lead and the wafer pad support bar to the interval between the inner leads is 1.14, if the resin liquid is written in one stroke When the inner lead is applied, the resin is not disposed in the gap between the inner lead and the wafer pad support rod, but is retained only by the resin disposed in the gap between the inner leads. However, at this time, the interval between the inner leads and the interval between the inner leads and the wafer pad support bars are 170 μm (resin viscosity 9.4 Pa·s or more) or 160 μm (resin viscosity 4 Pa.s or more). By changing the position where the resin liquid is applied to the gap between the inner lead and the wafer pad support rod and the position of the gap applied between the inner leads, the resin can be placed and held in the gap between the inner leads And a gap between the inner lead and the wafer pad support bar. This embodiment will be described below.

準據實施例1，將塗佈樹脂液的情形的樹脂液的舉動表示於第13圖。第13圖是表示鄰接於晶片銲墊支撐桿231的內部引線221，222，224，225的周邊的樹脂的舉動，在第13(A)圖中，偏離塗佈於內部引線221與222之 間，內部引線224與225之間的樹脂225及塗佈於晶片銲墊支撐桿231與內部引線222或內部引線224之間隙的樹脂256的位置。亦即，將須配置於晶片銲墊支撐桿與內部引線之間的間隙的樹脂層的位置作成框架側的位置。具體上，將須配置於晶片銲墊支撐桿與內部引線之間的間隙的樹脂位置，從配置於內部引線間的間隙的樹脂框架側的前端距0.8mm配置在框架側的位置。結果，被保持在內部引線222或內部引線224與晶片銲墊支撐桿231之間的間隙，在晶片銲墊支撐桿上樹脂256未移動而被保持在內部引線與晶片銲墊支撐桿之間的間隙。一方面，在內部引線221與222之間的間隙或內部引線224與225之間隙。樹脂是被保持在內部引線間的間隙。這時候，樹脂256不會移動在內部引線間的間隙。結果，如第3及第34圖所示的狀態下，樹脂是配置於內部引線間的間隙，內部引線與晶片銲墊支撐桿之間的間隙，而可得到內部引線的前端被固定的引線框。實際上，將須配置於晶片銲墊支撐桿與內部引線之間的間隙的樹脂位置，從配置於內部引線間的間隙的樹脂框架側的前端距0.5mm以上配置在框架側的位置就可以。According to the first embodiment, the behavior of the resin liquid in the case where the resin liquid is applied is shown in Fig. 13. Fig. 13 is a view showing the behavior of the resin adjacent to the inner leads 221, 222, 224, 225 of the wafer pad support rod 231, and in the 13th (A) view, the deviation is applied to the inner leads 221 and 222. The resin 225 between the inner leads 224 and 225 and the position of the resin 256 applied to the gap between the wafer pad support bar 231 and the inner lead 222 or the inner lead 224. That is, the position of the resin layer to be disposed in the gap between the wafer pad support rod and the inner lead is set to the position on the frame side. Specifically, the resin position to be placed in the gap between the wafer pad support bar and the inner lead is placed at a position on the frame side from the front end of the resin frame side disposed on the gap between the inner leads. As a result, the gap between the inner lead 222 or the inner lead 224 and the wafer pad support rod 231 is maintained, and the resin 256 is not moved on the wafer pad support rod to be held between the inner lead and the wafer pad support rod. gap. On the one hand, there is a gap between the inner leads 221 and 222 or a gap between the inner leads 224 and 225. The resin is held in the gap between the inner leads. At this time, the resin 256 does not move in the gap between the inner leads. As a result, in the state shown in FIGS. 3 and 34, the resin is disposed in the gap between the internal leads, and the gap between the internal leads and the wafer pad support bar, and the lead frame in which the leading end of the internal lead is fixed can be obtained. . Actually, the resin position to be disposed in the gap between the wafer pad support bar and the inner lead may be disposed at a position on the frame side from the front end of the resin frame side disposed on the gap between the inner leads by 0.5 mm or more.

〔實施例4］[Embodiment 4]

〔內部引線的剛性的評價］ 準據實施例1製作銅合金、板厚0.125mm、引線間隔為100 μm，而變更從內部引線的最前端緣一直到配置於 引線間的間隙的樹脂框架中心側的前端緣為止的距離(樹脂固定距離：L)的引線框，針對於此些引線框，測定內部引線的剛性。[Evaluation of the rigidity of the inner lead] According to the first embodiment, a copper alloy was produced, the thickness of the plate was 0.125 mm, and the lead interval was 100 μm, and the change was from the foremost edge of the inner lead to the arrangement. A lead frame having a distance (resin fixing distance: L) from the front end edge of the resin frame center side of the gap between the leads, and the rigidity of the inner lead was measured for the lead frames.

如在第24圖先前所述地，內部引線的剛性測定，是使用測定使用於半導體的裝配評價的細線強度或凸塊強度的剪力測試器，藉由測定將測定子510接觸於內部引線前端而移動30 μm時的應力(g)。在第24圖中，L是表示樹脂固定距離(mm)，W是表示內部引線的寬度(μm)，t是表示內部引線的厚度(mm)。作為比較，加上測定使用傳統的膠帶的引線框。又，在該測定方法中，將測定子510插進內部引線間的間隙之故，因而從內部引線前端緣一直到樹脂的固定部為止的距離為0.3mm以上。剛性的測定是在各個樹脂固定距離進行20次，而將測定值的最高值，最長值及平均值表示於表3，同時地表示於第25圖。As described earlier in Fig. 24, the rigidity measurement of the inner lead is a shear force tester for measuring the fine line strength or the bump strength used for the assembly evaluation of the semiconductor, and the measuring member 510 is brought into contact with the inner lead front end by measurement. The stress (g) when moving at 30 μm. In Fig. 24, L is the resin fixing distance (mm), W is the width (μm) of the inner lead, and t is the thickness (mm) of the inner lead. For comparison, a lead frame using conventional tape was measured. Further, in this measurement method, since the measuring element 510 is inserted into the gap between the internal leads, the distance from the leading edge of the inner lead to the fixing portion of the resin is 0.3 mm or more. The measurement of the rigidity was performed 20 times at a fixed distance of each resin, and the highest value, the longest value, and the average value of the measured values are shown in Table 3, and are shown in Fig. 25 at the same time.

由測定結果可知，以樹脂固定內部引線前端，則可認定提高內部引線的剛性。亦即，由圖示測定結果的第25 圖可知，內部引線的剛性是樹脂固定距離為1.2mm以下的範圍，對樹脂固定距離反比例變高。與傳統的膠帶品相比較，樹脂固定的本發明的內部引線的剛性，是最大提高7倍剛性。亦即，內部引線樹脂固定的本發明品的樹脂固定距離為0.3mm時的剛性是5.97g，對此，傳統的膠帶固定品是0.85g。又因內部引線的剛性對樹脂固定距離反比例地變高，因此在樹脂固定距離0.3mm以下，可容易地確認內部引線的剛性變高。而且，當樹脂固定距離超過1.2mm時，則內部引線的剛性是不會有很大變化，而無法成立比例關係。此為表示將內部引線的樹脂固定距離最好採用在1.2mm以下的範圍。亦即表示配置於內部引線間的間隙的樹脂框架中心側的前端位置為在從內部引線的最前端緣距1.2mm以下的範圍而位於框架側的位置的情形較佳。又，在表3中，L值為2.2者，為以傳統的膠帶所固定的引線框。From the measurement results, it was found that the rigidity of the inner lead was improved by fixing the inner lead end with a resin. That is, the 25th result of the measurement As can be seen from the figure, the rigidity of the inner lead is a range in which the resin fixing distance is 1.2 mm or less, and the resin fixing distance becomes inversely proportional. The rigidity of the inner lead of the present invention to which the resin is fixed is a maximum increase in rigidity of 7 times as compared with the conventional tape. That is, the rigidity of the present invention in which the internal lead resin was fixed at a resin fixing distance of 0.3 mm was 5.97 g, and the conventional tape fixing product was 0.85 g. Further, since the rigidity of the inner lead is increased in proportion to the resin fixing distance, the rigidity of the inner lead can be easily confirmed by the resin fixing distance of 0.3 mm or less. Moreover, when the resin fixing distance exceeds 1.2 mm, the rigidity of the inner lead does not largely change, and a proportional relationship cannot be established. This is a range in which the resin fixing distance of the inner lead is preferably 1.2 mm or less. In other words, it is preferable that the front end position on the center side of the resin frame disposed in the gap between the internal leads is at a position on the frame side from a range of 1.2 mm or less from the foremost edge of the inner lead. Further, in Table 3, the L value was 2.2, which was a lead frame fixed by a conventional tape.

〔實施例5］[Example 5]

〔內部引線的引線接合性的評價］ 如先前所述地，引線接合性是會受到從施以引線接合的位置一直到配置於引線間的間隙的樹脂框架中心側的前端為止的距離(在第27圖中以M表示)及施以引線接合的引線與超音波的振動方向所成的角度的影響。由該觀點，準據於實施例1，製作銅合金，板厚0.125mm，內部引線間的間隔為100 μm，內部引線的條數208條，樹脂固 定距離為0.8mm的引線框，在M為0.3mm，0.6mm的位置，實際進行引線接合，進行評價引線接合性。[Evaluation of wire bonding properties of internal leads] As described above, the wire bonding property is a distance (indicated by M in FIG. 27) from the position where the wire bonding is applied up to the front end of the resin frame center side disposed in the gap between the leads. The effect of the angle between the wire-bonded leads and the direction of vibration of the ultrasonic waves. From this point of view, in the first embodiment, a copper alloy was prepared with a plate thickness of 0.125 mm, an interval between internal leads of 100 μm, and a number of 208 internal leads, resin solid. A lead frame having a fixed distance of 0.8 mm was subjected to wire bonding at a position where M was 0.3 mm and 0.6 mm, and the wire bonding property was evaluated.

引線接合性的評價是如下地進行。亦即，在溫度170℃，負載80g，超音波時間10ms的引線接合條件下，對內部引線前端部進行實際的引線接合。在從配置於內部引線間的間隙的樹脂框架中心例的前端位置一直到施以引線接合的位置為止的距離M，而以求出M及配置於內部引線間的間隙的樹脂框架中心側的超音波輸出與引線接合連接率的關係的方法所進行。亦即，引線接合的作業，為對於從各樹脂固定一直到引線接合位置為止的距離進行20次，而求出針對於各超音波輸出滿足地進行引線接合的比率(引線接合連接率)。The evaluation of the wire bonding property was carried out as follows. That is, the actual lead wire bonding was performed on the inner lead tip end portion under wire bonding conditions of a temperature of 170 ° C, a load of 80 g, and an ultrasonic time of 10 ms. The distance M from the tip end position of the resin frame center example disposed in the gap between the inner leads to the position where the wire bonding is applied is performed to obtain M and the center of the resin frame disposed on the gap between the inner leads. The method of the relationship between the sound wave output and the wire bonding connection ratio is performed. In other words, the wire bonding operation is performed 20 times for the distance from the fixing of each resin to the wire bonding position, and the ratio (wire bonding connection ratio) for performing wire bonding for each ultrasonic output is obtained.

首先，引線接合是在超音波振動的影響大的位置P進行(第27圖)。將其評價結果表示於表4及第28圖。引線接合的位置Bp是在距配置於內部引線間的間隙的樹脂的框架中心側的前端有M距離處進行。作為M值選定0，0.3及0.6mm。第28圖是表示因應於從樹脂框架中心側的前端一直到引線接合位置為止的距離M，使得引線接合連接率藉由超音波輸出有所變化的情形。例如將超音波輸出作成120AMP等，則M＝0mm時為100%的連接率，在M＝0.3mm為65%，在M＝0.6mm為45%，而在M＝2.2mm(傳統的膠帶品)為10%，可知隨著M愈大，愈降低引線接合連接率。亦即，樹脂固定內部引線間的間隙的本發明的引線框，是對以傳統的膠帶所固定的引線框相比較，引線 接合連接率較高。First, wire bonding is performed at a position P where the influence of ultrasonic vibration is large (Fig. 27). The evaluation results are shown in Table 4 and Figure 28. The position Bp of the wire bonding is performed at a distance of M from the front end of the center side of the frame of the resin disposed in the gap between the inner leads. 0, 0.3 and 0.6 mm were selected as M values. Fig. 28 is a view showing a case where the wire bonding connection ratio is changed by the ultrasonic output in response to the distance M from the front end on the center side of the resin frame to the wire bonding position. For example, if the ultrasonic output is made to 120 AMP or the like, the connection ratio of 100% at M = 0 mm is 65% at M = 0.3 mm, 45% at M = 0.6 mm, and M = 2.2 mm (conventional tape product). When it is 10%, it is understood that as M is larger, the wire bonding connection ratio is lowered. That is, the lead frame of the present invention in which the resin fixes the gap between the inner leads is compared with the lead frame fixed by the conventional tape. The joint connection rate is high.

為了提昇連接率，表示著提高超音波的輸出就可以，惟增加超音波的輸出，則增大超音波振幅，而在引線接合頸部發生龜裂，或發生使用於引線接合的毛細管的摩耗加快的不方便。因此，在引線接合中，超音波輸出是在可能範圍內止於小輸出，而以大輸出的超音波進行引線接合較不理想。由該觀點，將樹脂配置於本發明的內部引線間的間隙加以固定的引線框，是與以傳統的膠帶所固定的引線框比較，可知較優異。In order to increase the connection rate, it is indicated that the output of the ultrasonic wave can be increased. However, if the output of the ultrasonic wave is increased, the amplitude of the ultrasonic wave is increased, and cracking occurs in the wire bonding neck, or the friction of the capillary used for wire bonding is accelerated. Inconvenient. Therefore, in wire bonding, the ultrasonic output is limited to a small output within a possible range, and wire bonding with a large output ultrasonic wave is less desirable. From this point of view, the lead frame in which the resin is placed in the gap between the internal leads of the present invention is improved as compared with the lead frame fixed by a conventional tape.

之後，在表示於第29圖的超音波的振動損耗最大位置P，大約中間的U點，及超音波振動損耗最小的V點的各位置施以引線接合。將該情形的引線接合連接率表示於表5及第30圖。由該結果可知，樹脂固定品是在從P點至V點，會在從超音波的輸出90AMP至110AMP的20AMP的範圍中可得到100%的連接率。一方面，傳統的膠帶品是為了在從P點至V點為止的範圍得到100%的連接率，則必須將超音波的輸出提高到100AMP至140AMP 的40AMP的等級，而需要本發明的樹脂固定引線框的兩倍等級。亦即，樹脂固定的本發明的引線框是可提供減小引線接合條件偏差寬度變小，且與膠帶品比較以低輸出的超音波能量可容易施以穩定的引線接合的引線框。Thereafter, wire bonding is performed at each position of the vibration loss maximum position P of the ultrasonic wave shown in FIG. 29, the intermediate U point, and the V point where the ultrasonic vibration loss is the smallest. The wire bonding connection ratio in this case is shown in Table 5 and Figure 30. From this result, it is understood that the resin-fixed product has a connection ratio of 100% in the range of 20 AMP from the output of the ultrasonic wave 90AMP to 110AMP from the point P to the point V. On the one hand, the traditional tape product is designed to achieve a 100% connection ratio from the P point to the V point, and the ultrasonic output must be increased to 100 AMP to 140 AMP. The 40AMP rating is required to double the grade of the resin-fixed leadframe of the present invention. That is, the lead frame of the present invention in which the resin is fixed is a lead frame which can provide a wire bonding which can reduce the wire bonding condition deviation width and which can be easily applied with a low output ultrasonic energy compared with the tape product.

〔實施例6］[Example 6]

〔引線間樹脂的接著強度及框架的彎曲強度］ 在引線間隔100 μm，板厚125 μm及150 μm的7個引線框中，對於配置於引線間的間隙的樹脂長度為500 μm者進行接著強度。在表6表示針對於引線框的板厚125 μm及150 μm所測定的7個接著強度測定值及此些的平均值。在板厚125 μm中，樹脂的接著強度差59.8g，而在板厚150 μm中，接著強度是95.8g。引線框的斷裂是所測定的引線框全部發生在樹脂與內部引線的界面。[Continuation strength of resin between leads and bending strength of frame] In seven lead frames having a lead interval of 100 μm and a thickness of 125 μm and 150 μm, the bonding strength was performed for a resin having a length of 500 μm disposed in a gap between the leads. Table 7 shows the measured values of the seven subsequent strengths measured for the thickness of the lead frame of 125 μm and 150 μm and the average values of these. In the sheet thickness of 125 μm, the adhesive strength difference of the resin was 59.8 g, and in the sheet thickness of 150 μm, the subsequent strength was 95.8 g. The breakage of the lead frame is such that all of the measured lead frames occur at the interface of the resin and the inner leads.

〔框架的彎曲強度］ 以下，有關於內部引線的針腳數從100針腳至256針腳的7種類的引線框，測定以引線框長度方向的中心部作為軸使得最外端部下垂5mm時的外力。此時的下垂力是受引線框的板厚、寬、圖案形狀等的影響，惟在所測定的7種類的引線框中。在板厚125 μm品。最大值是51g，而在板厚150 μm品是88g。將測定結果表示於表7。一般若引線框下垂5mm以上，則經引線接合的細線會產生變形、短路、斷裂等的不方便之故，因而在半導體裝配工程中以不會發生此種外力(5mm以上的引線框變形)的方式裝配著過程。在配置於先前所測定的引線間的樹脂長度為500 μm，接著強度是板厚125 μm為59.8g，而150 μm為95.8g，在樹脂長度為500 μm，即使引線框下垂5mm，被確認引線前端是不會破壞。因此，配置於引線間的樹脂長度有500 μm，則可充分耐於接著強度，框架的5mm變形，而可知作為引線框的剛性具有充分。[Bending strength of the frame] In the following, there are seven types of lead frames in which the number of stitches of the inner lead is from 100 stitches to 256 stitches, and the external force when the center portion in the longitudinal direction of the lead frame is used as the axis so that the outermost end portion hangs by 5 mm is measured. The sag force at this time is affected by the thickness, width, pattern shape, and the like of the lead frame, but in the seven types of lead frames measured. In the plate thickness of 125 μm. The maximum value is 51 g, and the product thickness is 150 g at 150 μm. The measurement results are shown in Table 7. In general, if the lead frame is drooped by 5 mm or more, the wire bonded by the wire may be inconvenient in deformation, short circuit, or breakage, and thus the external force (the deformation of the lead frame of 5 mm or more) does not occur in the semiconductor assembly process. The way to assemble the process. The length of the resin disposed between the previously measured leads was 500 μm, and then the strength was 59.8 g for the plate thickness of 125 μm, and 95.8 g for the 150 μm, and the length of the resin was 500 μm, even if the lead frame was drooped by 5 mm, the lead was confirmed. The front end will not break. Therefore, when the length of the resin disposed between the leads is 500 μm, it is possible to sufficiently withstand the bonding strength and the deformation of the frame of 5 mm, and it is understood that the rigidity of the lead frame is sufficient.

〔引線框的製造例1］ 說明內部引線間的間隔及內部引線與晶片銲墊支撐桿之間的間隔為170 μm以下，且具有此些間隔相等或大約相等的圖案(內部引線與晶片銲墊支撐桿之間的間隔對於內部引線間的間隔的比率至少為1.14以下的引線框)的引線框的實施例。將在本實施例以樹脂固定的引線框的全體概略圖表示於第14圖。[Manufacturing Example 1 of Lead Frame] The spacing between the inner leads and the spacing between the inner leads and the wafer pad support bars are 170 μm or less, and the patterns are equally or approximately equal (interval between the inner leads and the wafer pad support bars for the interior) An embodiment of a lead frame having a ratio of spacing between leads to a lead frame of at least 1.14 or less. A general schematic view of a lead frame fixed by a resin in this embodiment is shown in Fig. 14.

使用於本實施例的引線框，是208針腳的引線框，銅合金，板厚0.125mm，內部引線前端部的引線寬100 μm，內部引線間的間隔100 μm，及內部引線與晶片銲墊支撐桿之間的間隔100 μm的引線框。依照第15圖說明經樹脂固定的引線框均製造順序。第15(a)圖是表示使用蝕刻法或使用金屬模的壓機法等，圖案形成之後的內部引線前端部的一部分的圖式。內部引線的前端是以前端連結部480所連結。The lead frame used in this embodiment is a 208-pin lead frame, a copper alloy with a plate thickness of 0.125 mm, a lead width of 100 μm at the leading end of the inner lead, a spacing of 100 μm between the internal leads, and internal lead and wafer pad support. A lead frame with a spacing of 100 μm between the rods. The manufacturing sequence of the lead frames fixed by the resin will be described in accordance with Fig. 15. Fig. 15(a) is a view showing a part of the inner lead tip end portion after pattern formation by an etching method or a press method using a metal mold. The front end of the inner lead is connected by the front end connecting portion 480.

在該引線框的內部引線前端部，塗佈樹脂液(塗佈時溫度是23℃)。所使用的樹脂是環氧樹脂及潛在性硬化劑所成的一液型熱硬化性樹脂，具體為將咪唑化合物作為潛 在性硬化劑的環氧樹脂，黏度是25Pa．s(25℃)。樹脂液的塗佈是依據先前所述的方法，使用可將塗佈量均勻地塗佈開始部及塗佈終端部的螺旋式分配器所進行。使用分配器的噴嘴內徑0.15mm者，塗佈速度是25mm/秒，而在塗佈終端對螺旋施以0.02秒鐘的逆旋轉，而將從噴嘴所溢出的塗佈液施以吸取回吸。樹脂液的塗佈量是作為樹脂液的寬度成為300 μm的量。這時候，以所謂一筆書寫的要領將樹脂液塗佈引線框全面。以包圍晶片銲墊的方式，將樹脂塗佈於所有內部引線間的間隙。內部引線與晶片銲墊支撐桿之間的間隙。在樹脂的塗佈時，將成為施以引線接合的面的電鍍面朝下方而合樹脂不會附著於電鍍面，而且切斷表示於第16圖的內部引線的前端連結部480之際，切斷線A－A不會一起切斷樹脂482與內部引線的方式，將Ls(從樹脂位置至切斷為止的尺寸)為0.1mm以上進行塗佈。第15(b)圖是表示將樹脂482塗佈大約等間隔的各內部引線間的間隙的前端部及內部引線與晶片銲墊支撐桿之間的間隙的狀態。A resin liquid (the temperature at the time of coating was 23 ° C) was applied to the front end portion of the inner lead of the lead frame. The resin used is a one-component thermosetting resin composed of an epoxy resin and a latent curing agent, specifically using an imidazole compound as a latent In the epoxy resin of the hardener, the viscosity is 25Pa. s (25 ° C). The application of the resin liquid is carried out according to the method described above, using a spiral type dispenser which can apply a coating amount uniformly to the start portion and the coating end portion. When the inner diameter of the nozzle of the dispenser is 0.15 mm, the coating speed is 25 mm/sec, and the spiral is applied to the spiral at the coating terminal for 0.02 seconds, and the coating liquid overflowing from the nozzle is sucked and sucked back. . The coating amount of the resin liquid is an amount of 300 μm as the width of the resin liquid. At this time, the resin liquid is coated with the lead frame in a so-called one-stroke manner. The resin is applied to the gap between all the internal leads in such a manner as to surround the wafer pads. The gap between the inner lead and the wafer pad support bar. At the time of the application of the resin, the plating surface of the surface to which the wire bonding is applied is directed downward, and the resin does not adhere to the plating surface, and when the front end connecting portion 480 of the inner lead shown in FIG. 16 is cut, the cutting is performed. The disconnection line A-A does not cut the resin 482 and the inner lead together, and applies Ls (the size from the resin position to the cut) to 0.1 mm or more. Fig. 15(b) is a view showing a state in which the resin 482 is applied to the gap between the tip end portion of the gap between the respective inner leads and the inner lead and the wafer pad support rod.

塗佈樹脂液後，在氧氣濃度5%以下的運送機爐內以205℃進行硬化處理80秒鐘。在該條件下，藉由進行硬化處理，也可防止依熱氧化的銅合金的變色，不會損及引線框的品質與高品價值，而以樹脂可固定各內部引線間的間隙的前端部。之後，在內部引線施以引線接合的面施以電鍍。藉由蝕刻法來製作引線框時，則在進入電鍍工程之前，不必特別地進行引線框的脫脂，惟藉由在機法進行製作 時，則在進入電鍍工程之前，必須進行引線框的脫脂。如第17圖所示地，在電鍍工程中，電鍍罩幕488的內側端490會到固定用樹脂482上般地，將電鍍罩幕488的內側端490設定在第17(b)圖所表示的D線。當罩幕內側端設定在D或B的線，則樹脂482發揮作為一種壩的作用之故，因而可防止電鍍液從各內部引線間及內部引線與晶片銲墊支撐桿之間的側壁間的框架側流出的情形，藉由此，可作成品質穩定的電鍍。一方面，當將罩幕內側端設定在第17(b)圖的C線，則電鍍液從罩幕端朝框架側侵入至內部引線板厚側壁部，使得電鍍液附著於側壁部而發生電鍍鬍鬚或毛邊附著，而無法進行穩定的電鍍。將電鍍後的引線框的狀態表示於第15(c)圖。亦即，第15(c)圖是表示樹脂固定內部引線的前端部之後，將鍍銀等選擇性地施以電鍍484於引線接合部及晶片銲墊側的引線框部分的狀態。After the resin liquid was applied, the resin was cured at 205 ° C for 80 seconds in a conveyor furnace having an oxygen concentration of 5% or less. Under these conditions, by performing the hardening treatment, discoloration of the copper alloy by thermal oxidation can be prevented, and the quality of the lead frame can be prevented from being deteriorated, and the front end portion of the gap between the internal leads can be fixed by the resin. . Thereafter, plating is applied to the surface on which the internal leads are wire bonded. When the lead frame is formed by an etching method, it is not necessary to specifically perform degreasing of the lead frame before entering the plating process, but it is produced by the machine method. At the time, the lead frame must be degreased before entering the plating process. As shown in Fig. 17, in the electroplating process, the inner end 490 of the plating mask 488 is applied to the fixing resin 482, and the inner end 490 of the plating mask 488 is set as shown in Fig. 17(b). D line. When the inner end of the mask is set to the line of D or B, the resin 482 functions as a dam, thereby preventing the plating solution from being interposed between the inner leads and the inner lead and the side wall between the wafer pad support rods. When the frame side flows out, the quality of the plating can be made stable. On the one hand, when the inner end of the mask is set to the C line of the 17th (b)th sheet, the plating solution intrudes from the mask end toward the frame side to the inner lead plate thickness side wall portion, so that the plating solution adheres to the side wall portion to be plated. The beard or burrs are attached and stable plating is not possible. The state of the lead frame after plating is shown in Fig. 15(c). In other words, the fifteenth (c) is a state in which the front end portion of the inner lead is fixed to the resin, and silver plating or the like is selectively applied to the lead frame portion on the wire bonding portion and the wafer pad side.

電鍍後，以表示於第16圖的切斷線A－A，使用金屬模切斷分離第15圖的內部引線的前端連結部480，而得到所定的引線框(第14圖)。第15(d)是表示以衝孔機486切斷分離內部引線的前端連結部的部分，而第15(e)圖是表示切斷分離後的完成引線框的形狀。表示第15(e)圖的全體者為第14圖。切斷分離內部引線的前端連結部的位置，是配置在引線間的樹脂上也可以。該情形，是配置於內部引線間的間隙的樹脂框架中心側的前端緣是一致於內部引線最前端。又，包含配置有樹脂的部分而將切 斷分離內部引線的前端連結部的情形作成問題時，為了防止依發生打痕、毛邊等的對於引線框的品質的不良影響，在從配置於內部引線間的間隙的樹脂框架中心側的前端位置距0.1mm至1.2mm框架中心側的位置，可切斷分離內部引線的前端連結部。該情形，是配置於內部引線間的間隙的樹脂框架中心側的前端緣，是作成從內部引線最前端離開0.1mm至1.2mm較佳。After the electroplating, the tip end connecting portion 480 of the inner lead of Fig. 15 is cut and separated by a die in the cutting line A-A shown in Fig. 16 to obtain a predetermined lead frame (Fig. 14). The fifteenth (d) is a portion in which the distal end connecting portion for separating the inner lead is cut by the punching machine 486, and the fifteenth (e) is a view showing the shape of the completed lead frame after the cutting and separating. The figure showing the 15th (e) figure is the 14th figure. The position at which the distal end connecting portion for separating the inner lead is cut may be disposed on the resin between the leads. In this case, the front end edge of the center side of the resin frame disposed in the gap between the inner leads is aligned with the innermost end of the inner lead. Also, it includes a portion in which a resin is disposed and will be cut. In the case where the front end connecting portion of the inner lead is disconnected, in order to prevent the adverse effect on the quality of the lead frame due to the occurrence of scratches, burrs, etc., the front end position on the center side of the resin frame from the gap between the inner leads is prevented. The front end connecting portion for separating the inner leads can be cut at a position on the center side of the frame from 0.1 mm to 1.2 mm. In this case, the front end edge of the center side of the resin frame disposed in the gap between the inner leads is preferably 0.1 mm to 1.2 mm from the foremost end of the inner lead.

〔實施例8］[Embodiment 8]

〔引線框的製造例2］ 在本實施例中，說明內部引線間的間隔及內部引線與晶片銲墊支撐桿之間的間隔為170 μm以下，且內部引線與晶片銲墊支撐桿之間的間隔對於內部引線間的間隔的比率為超過1.14時的引線框的例子。作為引線框，使用208針腳的引線框，銅合金，板厚0.125mm，內部引線前端部的引線寬100 μm，內部引線間的間隔100 μm，及內部引線與晶片銲墊支撐桿之間的間隔140 μm的引線框(兩者的比率為1.4)。在第18圖表示本實施例的引線框的全體概略。此為與實施例7具不同的樹脂固定部。[Manufacturing Example 2 of Lead Frame] In this embodiment, the interval between the inner leads and the interval between the inner leads and the wafer pad support bars are 170 μm or less, and the interval between the inner leads and the wafer pad support bars is spaced from the inner leads. An example of a lead frame when the ratio is more than 1.14. As the lead frame, a 208-pin lead frame, copper alloy, 0.125 mm thick, 100 μm lead at the leading end of the inner lead, 100 μm between the internal leads, and the gap between the inner lead and the pad support bar 140 μm lead frame (the ratio of the two is 1.4). Fig. 18 is a view showing the overall outline of the lead frame of the present embodiment. This is a resin fixing portion different from that of the seventh embodiment.

依照第19圖說明引線框的製造順序。第19(a)圖是表示使用蝕刻法或使用金屬模的壓機法等，圖案形成之後的內部引線前端部的一部分的圖式。內部引線的前端是以前端連結部480所連結。在該引線框的內部引線前端部，塗佈樹脂液(塗佈時溫度是25℃)。所使用的樹脂與實施 例7同樣地是環氧樹脂及潛在性硬化劑所成的一液型熱硬化性樹脂，黏度是30Pa．s(25℃)。樹脂液的塗佈是依據先前所述的方法。使用可將塗佈量均勻地塗佈開始部及塗佈終端部的螺旋式分配器所進行。使用分配器的噴嘴內徑0.15mm者，塗佈速度是25mm/秒，而在塗佈終端對螺旋施以0.02秒鐘的逆旋轉，而將從噴嘴所溢出的塗佈液施以吸取回收。樹脂液的塗佈量是作為樹脂液的寬度成為300 μm的量。The manufacturing sequence of the lead frame will be described in accordance with FIG. Fig. 19(a) is a view showing a part of the inner lead tip end portion after pattern formation by an etching method or a press method using a metal mold. The front end of the inner lead is connected by the front end connecting portion 480. A resin liquid was applied to the front end portion of the inner lead of the lead frame (the temperature at the time of coating was 25 ° C). Resin used and implemented Example 7 is a one-component thermosetting resin made of epoxy resin and latent curing agent, and the viscosity is 30 Pa. s (25 ° C). The coating of the resin liquid is in accordance with the method previously described. It is carried out using a spiral type dispenser which can apply a coating amount uniformly to a start part and a coating end part. When the inner diameter of the nozzle of the dispenser was 0.15 mm, the coating speed was 25 mm/sec, and the spiral was applied to the spiral at a coating terminal for 0.02 seconds, and the coating liquid overflowed from the nozzle was subjected to suction recovery. The coating amount of the resin liquid is an amount of 300 μm as the width of the resin liquid.

內部引線與晶片銲墊支撐桿之間的間隔對於內部引線間的間隔的比率超過1.14時，若以所謂一筆書寫塗佈引線框一周，則內部引線與晶片銲墊支撐桿之間的間隔為比其他的內部引線間的間隔還寬之故，因而塗佈於內部引線與晶片銲墊支撐桿之間的間隙的樹脂的一部分，朝鄰接的內部引線間的間隙的一邊移動，事實上，在內部引線與晶片銲墊支撐桿之間的間隙無法配置樹脂的情形已如上所述。如此，首先，在內部引線間的間隙的前端部，依照如上所述的方法。使用螺旋式分配器，塗佈樹脂液。之後，不會與塗佈在各內部引線間的間隙的位置的方式，從塗佈於內部引線間的間隙的樹脂框架側距0.8mm框架側的位置，將樹脂液塗佈於內部引線與晶片銲墊支撐桿之間的間隙。如此地，藉由變更將樹脂液塗佈於內部引線間的間隙的位置及塗佈於內部引線與晶片銲墊支撐桿之間的間隙的樹脂液的位置，避開互相干擾進行塗佈，而可作樹脂固定。在該實施例中，在從塗佈於內部引線間的間隙的樹脂框架側 距0.8mm框架側的位置，將樹脂液塗佈在內部引線與晶片銲墊支撐桿之間的間隙，惟實際上，將須配置於晶片銲墊支撐桿與內部引線之間的間隙的樹脂位置，可配置在從配置於內部引線間的間隙的樹脂框架側的前端距0.5mm以上框架側的位置的方式進行塗佈就可以。When the ratio between the inner lead and the wafer pad support bar is greater than 1.14 for the interval between the inner leads, if the lead frame is coated for one week by a so-called one-stroke, the interval between the inner lead and the wafer pad support bar is Since the interval between the other inner leads is also wide, a part of the resin applied to the gap between the inner lead and the wafer pad support rod moves toward one side of the gap between the adjacent inner leads, in fact, inside. The case where the gap between the lead and the wafer pad support bar cannot be configured with the resin has been described above. Thus, first, the tip end portion of the gap between the inner leads is in accordance with the method described above. The resin liquid was applied using a spiral dispenser. Thereafter, the resin liquid is applied to the inner leads and the wafer from the position of the frame side of the resin frame applied to the gap between the inner leads by 0.8 mm from the frame side of the gap between the inner leads, so as not to be applied to the gap between the inner leads. The gap between the pads supports the bars. In this manner, by changing the position where the resin liquid is applied to the gap between the inner leads and the position of the resin liquid applied to the gap between the inner lead and the wafer pad support rod, the coating is prevented from interfering with each other. Can be fixed as a resin. In this embodiment, on the side of the resin frame from the gap applied between the inner leads At a position of 0.8 mm from the frame side, the resin liquid is applied to the gap between the inner lead and the wafer pad support rod, but in reality, the resin position to be disposed in the gap between the wafer pad support rod and the inner lead It can be applied so that the front end of the resin frame side disposed in the gap between the inner leads is at a position of 0.5 mm or more from the frame side.

在樹脂的塗佈時，將成為施以引線接合的面的電鍍面朝下方而合樹脂不會附著於電鍍面，而且切斷表示於第16圖的內部引線的前端連結部480之際，切斷線A－A不會一起切斷樹脂482與內部引線的方式，將Ls(從樹脂位置至切斷為止的尺寸)為0.1mm以上進行塗佈。第19(b)圖是表示塗佈於各內部引線間的間隙的樹脂位置及塗佈內部引線與晶片銲墊支撐桿之間的間隙的樹脂位置不相同的情形。塗佈樹脂液後，在氧氣濃度5%以下的運送機爐內以205℃進行硬化處理80秒鐘。在該條件下，藉由進行硬化處理，也可防止依熱氧化的銅合金的變色，不會損及引線框的品質與商品價值，而以樹脂可固定各內部引線間的間隙的前端部。At the time of the application of the resin, the plating surface of the surface to which the wire bonding is applied is directed downward, and the resin does not adhere to the plating surface, and when the front end connecting portion 480 of the inner lead shown in FIG. 16 is cut, the cutting is performed. The disconnection line A-A does not cut the resin 482 and the inner lead together, and applies Ls (the size from the resin position to the cut) to 0.1 mm or more. Fig. 19(b) shows a case where the resin position applied to the gap between the internal leads and the resin position at which the gap between the inner lead and the wafer pad support rod is applied are different. After the resin liquid was applied, the resin was cured at 205 ° C for 80 seconds in a conveyor furnace having an oxygen concentration of 5% or less. Under these conditions, by performing the hardening treatment, discoloration of the copper alloy by thermal oxidation can be prevented, and the front end portion of the gap between the internal leads can be fixed by the resin without impairing the quality and commercial value of the lead frame.

之後，在內部引線施以引線接合的面施以電鍍。在第19(c)圖表示樹脂固定內部引線的前端之後，在施以引線接合的部分施以鍍銀電鍍之狀態。如第20圖所示地，在電鍍工程中，電鍍罩幕488的內側端490會到固定用樹脂482上般地，將電鍍罩幕488的內側端490設定在第20(a)圖所表示的D線。當罩幕內側端設定在D或B的線，則樹脂482發揮作為一種壩的作用之故，因而可防止電 鍍液從各內部引線間及內部引線與晶片銲墊支撐桿之間的側壁間朝框架側流出的情形，藉由此，可作成品質穩定的電鍍。又，當將罩幕內側端設定在第20(b)圖的E線，則電鍍液從罩幕端朝框架側侵入至內部引線板厚側壁部，使得電鍍液附著於側壁部而發生電鍍鬍鬚或毛邊附著，而無法進行穩定的電鍍。將電鍍後的引線框的狀態表示於第19(c)圖。亦即，第19(c)圖是表示樹脂固定內部引線的前端部之後，將鍍銀等選擇性地施以電鍍484於引線接合部及晶片銲墊側的引線框部分的狀態。Thereafter, plating is applied to the surface on which the internal leads are wire bonded. After the end of the resin-fixed inner lead is shown in Fig. 19(c), the portion to which the wire bonding is applied is subjected to silver plating plating. As shown in Fig. 20, in the electroplating process, the inner end 490 of the plating mask 488 is applied to the fixing resin 482, and the inner end 490 of the plating mask 488 is set as shown in Fig. 20(a). D line. When the inner end of the mask is set to the line of D or B, the resin 482 functions as a dam, thereby preventing electricity The plating solution flows out from between the inner leads and between the inner leads and the side walls between the inner pads and the wafer pad support bars toward the frame side, whereby the quality can be stably plated. Further, when the inner end of the mask is set to the E line of the 20th (b)th sheet, the plating solution intrudes from the mask end toward the frame side to the side wall portion of the inner lead plate thickness, so that the plating solution adheres to the side wall portion and the plating whisker occurs. Or the burrs are attached, and stable plating cannot be performed. The state of the lead frame after plating is shown in Fig. 19(c). In other words, the 19th (c) is a state in which the front end portion of the inner lead is fixed to the resin, and silver plating or the like is selectively applied to the lead frame portion on the wire bonding portion and the wafer pad side.

電鍍後，以表示於第16圖的切斷線A－A，使用金屬模切斷分離第19圖的內部引線的前端連結部480，而得到所定的引線框(第18圖)。第19(d)圖是表示以衝孔機486切斷分離內部引線的前端連結部的部分，而第19(e)圖是表示切斷分離後的完成引線框的形狀。表示第19(e)圖的全體者為第18圖。After the electroplating, the tip end connecting portion 480 of the inner lead of Fig. 19 is cut and separated by a die shown in the cutting line A-A of Fig. 16 to obtain a predetermined lead frame (Fig. 18). Fig. 19(d) is a view showing a portion in which the front end connecting portion for separating the inner lead is cut by the punching machine 486, and Fig. 19(e) is a view showing the shape of the completed lead frame after the cutting and separating. The entire representative of the 19th (e) diagram is the 18th.

〔實施例9］[Example 9]

〔引線框的製造例3］ 在本實施例中，說明內部引線間的間隔為170 μm以下，內部引線與晶片銲墊支撐桿之間的間隔對於內部引線間的間隔的比率為超過1.14，且內部引線與晶片銲墊支撐桿之間的間隔為超過170 μm時的引線框的例子。作為引線框，使用208針腳的引線框，銅合金，板厚0.125mm，內部引線前端部的引線寬100 μm，內部引線間的間隔100 μm，及內部引線與晶片銲墊支撐桿之間的間隔250 μm的引線框(兩者的比率是2.5)。在第21圖，表示本實施例的引線框的整體概略。在第21圖所表示的引線框，是與實施例7及實施例8的引線框有很大不同。亦即，僅在內部引線與晶片銲墊支撐桿之間的間隔配置樹脂，而在內部引線與晶片銲墊支撐桿之間的間隙未配置樹脂的引線框。此為內部引線與晶片銲墊支撐桿之間的間隔為寬到250 μm之故，因而在內部引線與晶片銲墊支撐桿之間的間隙無法塗佈樹脂。[Manufacturing Example 3 of Lead Frame] In this embodiment, the interval between the inner leads is 170 μm or less, the ratio of the interval between the inner leads and the wafer pad support bars to the interval between the inner leads is more than 1.14, and the inner leads and the wafer pad support bars are An example of a lead frame with an interval of more than 170 μm. As the lead frame, a 208-pin lead frame, a copper alloy, a plate thickness of 0.125 mm, a lead wire width of 100 μm at the leading end of the inner lead, and an interval of 100 between the internal leads Mm, and a lead frame with a 250 μm spacing between the inner leads and the wafer pad support bar (the ratio of the two is 2.5). Fig. 21 is a view showing the overall outline of the lead frame of the present embodiment. The lead frame shown in Fig. 21 is largely different from the lead frames of the seventh embodiment and the eighth embodiment. That is, the resin is disposed only at intervals between the inner leads and the wafer pad support bars, and the lead frame of the resin is not disposed in the gap between the inner leads and the wafer pad support bars. This is because the spacing between the inner leads and the wafer pad support bars is as wide as 250 μm, so that the gap between the inner leads and the wafer pad support bars cannot be coated with resin.

依照第22圖說明晶片銲墊支撐桿的製造順序。第22(a)圖是表示使用蝕刻法或使用金屬模的壓機法等，圖案形成之後的內部引線前端部的一部分的圖式。內部引線的前端是以前端連結部480所連結。在該引線框的內部引線前端部，塗佈樹脂液(塗佈時溫度是23℃)。所使用的樹脂與實施例7同樣地是環氧樹脂及潛在性硬化劑所成的一液型熱硬化性樹脂，黏度是20Pa．s(25℃)。樹脂液的塗佈是依據先前所述的方法，使用可將塗佈量均勻地塗佈開始部及塗佈終端部的螺旋式分配器所進行。使用分配器的噴嘴內徑0.15mm者，塗佈速度是25mm/秒，而在塗佈終端對螺旋施以0.02秒鐘的逆旋轉，而將從噴嘴所溢出的塗佈液施以吸取回吸。樹脂液的塗佈量是作為樹脂液的寬度成為300 μm的量。The manufacturing sequence of the wafer pad support bars will be described in accordance with FIG. Fig. 22(a) is a view showing a part of the inner lead tip end portion after pattern formation by an etching method or a press method using a metal mold. The front end of the inner lead is connected by the front end connecting portion 480. A resin liquid (the temperature at the time of coating was 23 ° C) was applied to the front end portion of the inner lead of the lead frame. The resin used was a one-pack type thermosetting resin composed of an epoxy resin and a latent curing agent in the same manner as in Example 7, and the viscosity was 20 Pa. s (25 ° C). The application of the resin liquid is carried out according to the method described above, using a spiral type dispenser which can apply a coating amount uniformly to the start portion and the coating end portion. When the inner diameter of the nozzle of the dispenser is 0.15 mm, the coating speed is 25 mm/sec, and the spiral is applied to the spiral at the coating terminal for 0.02 seconds, and the coating liquid overflowing from the nozzle is sucked and sucked back. . The coating amount of the resin liquid is an amount of 300 μm as the width of the resin liquid.

在該實施例中，僅在內部引線間的間隙塗佈樹脂液，而在內部引線與晶片銲墊支撐桿之間的間隙未塗佈樹脂液 。如此，首先，在各內部引線間的間隙的前端部，依照已述方法，使用螺旋式分配器，如第22(b)圖所示地，將樹脂液除了內部引線與晶片銲墊支撐桿之間的間隔之外，包圍著晶片銲墊支撐桿般地塗佈樹脂於內部引線間的間隙。In this embodiment, the resin liquid is applied only to the gap between the inner leads, and the gap between the inner lead and the wafer pad support bar is not coated with the resin liquid. . Thus, first, in the front end portion of the gap between the inner leads, a spiral type distributor is used according to the method described above, and as shown in FIG. 22(b), the resin liquid is removed from the inner lead and the wafer pad support rod. In addition to the interval between the spacers, the resin is applied to the gap between the internal leads in a manner similar to the wafer pad support bar.

在樹脂的塗佈時，將成為施以引線接合的面的電鍍面朝下方而合樹脂不會附著於電鍍面，而且切斷表示於第16圖的內部引線的前端連結部480之際，切斷線A－A不會一起切斷樹脂482與內部引線的方式，將Ls(從樹脂位置至切斷為止的尺寸)為0.1mm以上進行塗佈。第22(b)圖是表示僅在各內部引線間的間隙塗佈的狀態。塗佈樹脂液後，在氧氣濃度5%以下的運送機爐內以205℃進行硬化處理80秒鐘。在該條件下，藉由進行硬化處理，也可防止依熱氧化的銅合金的變色，不會損及引線框的品質與商品價值，而以樹脂可固定各內部引線間的間隙的前端部。At the time of the application of the resin, the plating surface of the surface to which the wire bonding is applied is directed downward, and the resin does not adhere to the plating surface, and when the front end connecting portion 480 of the inner lead shown in FIG. 16 is cut, the cutting is performed. The disconnection line A-A does not cut the resin 482 and the inner lead together, and applies Ls (the size from the resin position to the cut) to 0.1 mm or more. Fig. 22(b) is a view showing a state in which only the gap between the internal leads is applied. After the resin liquid was applied, the resin was cured at 205 ° C for 80 seconds in a conveyor furnace having an oxygen concentration of 5% or less. Under these conditions, by performing the hardening treatment, discoloration of the copper alloy by thermal oxidation can be prevented, and the front end portion of the gap between the internal leads can be fixed by the resin without impairing the quality and commercial value of the lead frame.

之後，在內部引線施以引線接合的面施以電鍍。在第22(c)圖表示樹脂固定內部引線的前端之後，在施以引線接合的部分施以鍍銀電鍍之狀態。如第23圖所示地，在電鍍工程中，電鍍罩幕488的內側端490會到固定用樹脂482上般地，將電鍍罩幕488的內側端490設定在第23(b)圖所表示的D線。當罩幕內側端設定在D或B的線，則樹脂482發揮作為一種壩的作用之故，因而可防止電鍍液朝框架側流出的情形，惟在內部引線與晶片銲墊支撐桿之間，從側壁有電鍍液侵入。在實施例7及8中，在內 部引線間的間隙及內部引線與晶片銲墊支撐桿之間的間隙配置有樹脂之故，因而藉由在所配置的樹脂上置放電鍍罩幕，可防止電鍍液從電鍍罩幕內側端侵入至引線板厚側壁部的情形。在本實施例中，所配置的樹脂未連結引線框的全周之故，因而電鍍液從樹脂未連結的部分(內部引線與晶片銲墊支撐桿之間的間隙)流出。為了應付此，如第23(a)圖所示地，在內部引線與晶片銲墊支撐桿之間而在相當於電鍍液流出部分的電鍍罩幕488設置防止電鍍液流出的壩桿502，施以電鍍。結果，防止電鍍液從內部引線與晶片銲墊支撐桿之間朝框架側流出的情形，而可施以品質穩定的電鍍。Thereafter, plating is applied to the surface on which the internal leads are wire bonded. After the end of the resin-fixed inner lead is shown in Fig. 22(c), the portion to which the wire bonding is applied is subjected to silver plating. As shown in Fig. 23, in the electroplating process, the inner end 490 of the plating mask 488 is applied to the fixing resin 482, and the inner end 490 of the plating mask 488 is set as shown in Fig. 23(b). D line. When the inner end of the mask is set to the line of D or B, the resin 482 functions as a dam, thereby preventing the plating solution from flowing out toward the frame side, but between the inner lead and the wafer pad support rod, Intrusion of plating solution from the side wall. In Examples 7 and 8, The gap between the lead wires and the gap between the inner leads and the wafer pad support bar are disposed with a resin. Therefore, by placing a plating mask on the disposed resin, the plating solution can be prevented from intruding from the inner side of the plating mask. To the case where the side wall portion of the lead plate is thick. In the present embodiment, the disposed resin is not connected to the entire circumference of the lead frame, and thus the plating solution flows out from the portion where the resin is not joined (the gap between the inner lead and the wafer pad support rod). In order to cope with this, as shown in Fig. 23(a), a dam rod 502 for preventing the outflow of the plating solution is provided between the inner lead and the wafer pad support rod and at the plating mask 488 corresponding to the outflow portion of the plating solution. To electroplating. As a result, it is possible to prevent the plating solution from flowing out from the inner lead and the wafer pad support rod toward the frame side, and it is possible to apply stable quality plating.

電鍍後，以表示於第16圖的切斷線A－A，使用金屬模切斷分離第22圖的內部引線的前端連結部480，而得到所定的引線框。第22(d)是表示以衝孔機486切斷分離內部引線的前端連結部的部分，而第22(e)圖是表示切斷分離後的完成引線框的形狀。表示第22(e)圖的全體者為第21圖。After the electroplating, the front end connecting portion 480 of the inner lead of Fig. 22 is cut and separated by a metal mold using the cutting line A-A shown in Fig. 16 to obtain a predetermined lead frame. The 22nd (d) is a portion in which the front end connecting portion for separating the inner lead is cut by the punching machine 486, and the 22nd (e) is a view showing the shape of the completed lead frame after the cutting and separating. The entirety of the figure 22(e) is the 21st.

〔實施例10］[Example 10]

〔引線框的製造例4］ 在引線間隔為170或160 μm以下，而內部引線與晶片銲墊支撐桿之間的間隔對於內部引線間隔的比率為比1.14還大時，則成為在內部引線與晶片銲墊支撐桿之間的間隙未配置樹脂，或是將配於內部引線與晶片銲墊支撐桿 之間的間隙的樹脂位置取在比配置於內部引線間的樹脂位置還框架側。將配於內部引線與晶片銲墊支撐桿之間的間隙的樹脂位取在比配置於內部引線間的樹脂位置還框架側時，則與實施例8同樣製作變更配置該樹脂的位置的引線框。變更配置樹脂的位置時，所塗佈的樹脂移動至鄰接的內部引線或晶片銲墊支撐桿上，事實上在內部引線與晶片銲墊支撐桿間產生未塗佈有樹脂的現象。由該觀點，變更配置於內部引線間的樹脂位置及塗佈、配置於內部引線與晶片銲墊支撐桿之間中間的樹脂的位置時，調查是否塗佈於內部引線與晶片銲墊支撐桿間的樹脂移動到內部引線或晶片銲墊支撐桿上，或是被塗佈於內部引線與晶片銲墊支撐桿之間的中間。將其結果表示於表8。由表8可知，在塗佈於內部引線間的樹脂框架側的位置及塗佈於內部引線與晶片銲墊支撐桿之間的中間的樹脂框架中心側的位置的相差(第3圖的G)為0.3mm以下，樹脂完全移動在內部引線，晶片銲墊支撐桿上，而在內部引線與晶片銲墊支撐桿之間的間隙，樹脂是未塗佈，配置。可知在塗佈、配置的樹脂位置的相差為0.4mm，樹脂局部地移動到內部引線、引線框上，而在內部引線與晶片銲墊支撐桿之間的間隙，樹脂是完全未塗佈、配置。一方面，可知在塗佈、配置的樹脂位置的相差為0.5mm以上，樹脂未移動到內部引線、晶片銲墊支撐桿上，而在內部引線與晶片銲墊支撐桿之間的間隙塗佈、配置有樹脂。[Manufacturing Example 4 of Lead Frame] When the lead spacing is 170 or less, and the ratio of the spacing between the inner lead and the wafer pad support bar to the inner lead spacing is greater than 1.14, it becomes between the inner lead and the wafer pad support bar. The gap is not configured with resin, or it will be matched with the inner lead and the wafer pad support bar. The position of the resin between the gaps is taken from the position of the resin disposed between the inner leads and also on the frame side. When the resin position of the gap between the inner lead and the wafer pad support rod is taken over the frame position of the resin disposed between the inner leads, the lead frame in which the position of the resin is changed is produced in the same manner as in the eighth embodiment. . When the position of the resin is changed, the applied resin moves to the adjacent inner lead or the wafer pad support rod, and in fact, the resin is not coated between the inner lead and the wafer pad support rod. From this point of view, when the position of the resin disposed between the inner leads and the position of the resin disposed between the inner lead and the wafer pad support rod are changed, it is investigated whether or not it is applied between the inner lead and the wafer pad support bar. The resin is moved to the inner lead or wafer pad support bar or is applied between the inner lead and the wafer pad support bar. The results are shown in Table 8. As can be seen from Table 8, the difference between the position on the resin frame side applied between the inner leads and the position on the center side of the resin frame applied between the inner lead and the wafer pad support rod (G in FIG. 3) Below 0.3 mm, the resin is completely moved on the inner leads, the wafer pads are supported on the rods, and the gap between the inner leads and the wafer pad support bars is uncoated and disposed. It can be seen that the difference in the position of the applied and disposed resin is 0.4 mm, the resin partially moves to the inner lead and the lead frame, and the gap between the inner lead and the wafer pad support rod is completely uncoated and disposed. . On the one hand, it can be seen that the difference in the position of the applied and disposed resin is 0.5 mm or more, the resin is not moved to the inner lead, the wafer pad support rod, and the gap between the inner lead and the wafer pad support rod is coated, It is equipped with resin.

10‧‧‧半導體裝置10‧‧‧Semiconductor device

11‧‧‧晶片銲墊11‧‧‧ wafer pads

12‧‧‧內部引線12‧‧‧Internal leads

13‧‧‧外界引線13‧‧‧ outside lead

20‧‧‧半導體元件20‧‧‧Semiconductor components

21‧‧‧半導體元件的端子21‧‧‧ Terminals for semiconductor components

30‧‧‧細線30‧‧‧ Thin line

40‧‧‧密封用樹脂40‧‧‧ Sealing resin

100‧‧‧引線框100‧‧‧ lead frame

110‧‧‧引線框的一部分110‧‧‧Part of the lead frame

111‧‧‧晶片銲墊111‧‧‧ wafer pads

113‧‧‧外界引線113‧‧‧ outside lead

116‧‧‧晶片銲墊支撐桿116‧‧‧ wafer pad support rod

120‧‧‧膠帶120‧‧‧ Tape

130‧‧‧內部引線的一部分130‧‧‧ part of the inner lead

140‧‧‧內部引線的中間部140‧‧‧Intermediate part of the inner lead

145‧‧‧引線接合夾具145‧‧‧Wire bonding fixture

160‧‧‧內部引線的最前端部160‧‧‧The front end of the inner lead

170‧‧‧內部引線170‧‧‧Internal leads

210‧‧‧引線框的一部分210‧‧‧Part of the lead frame

211‧‧‧晶片銲墊211‧‧‧ wafer pads

221、222、224、225‧‧‧內部引線221, 222, 224, 225‧‧‧ internal leads

231‧‧‧晶片銲墊支撐桿231‧‧‧ wafer pad support rod

241、242‧‧‧內部引線與晶片銲墊支撐桿之間的間隙241, 242‧‧‧ clearance between the inner lead and the wafer pad support rod

250‧‧‧樹脂(液)250‧‧‧Resin (liquid)

252‧‧‧配置於內部引線間的間隙的樹脂252‧‧‧Resin disposed in the gap between the internal leads

254‧‧‧配置於內部引線與晶片銲墊支撐桿之間的間隙的樹脂254‧‧‧Resin disposed in the gap between the inner lead and the wafer pad support rod

255‧‧‧塗佈於內部引線間的樹脂液255‧‧‧Resin solution applied between internal leads

256‧‧‧塗佈於內部引線與晶片銲墊支撐桿之間的樹脂液256‧‧‧Resin solution applied between the inner lead and the wafer pad support rod

257‧‧‧晶片銲墊支撐桿上的樹脂257‧‧‧Resin on the wafer pad support rod

400‧‧‧螺旋式分配器400‧‧‧Spiral distributor

410‧‧‧螺旋410‧‧‧Spiral

420‧‧‧樹脂供應噴射器420‧‧‧Resin supply injector

430‧‧‧噴嘴430‧‧‧ nozzle

440‧‧‧樹脂容器440‧‧‧Resin container

450‧‧‧供應樹脂450‧‧‧Supply resin

460‧‧‧供應管460‧‧‧Supply tube

472‧‧‧內部引線的前端連結部472‧‧‧ front lead connection of internal leads

474‧‧‧塗佈寬變大的樹脂474‧‧‧ Coating wide and large resin

476‧‧‧塗佈寬小的樹脂476‧‧‧ Coating wide resin

480‧‧‧內部引線的前端連結部480‧‧‧ front lead connection of internal leads

482‧‧‧配置於內部引線間的間隙的樹脂482‧‧‧Resin disposed in the gap between the internal leads

483‧‧‧配置於內部引線與晶片銲墊支撐桿之間的間隙的樹脂483‧‧‧Resin disposed in the gap between the inner lead and the wafer pad support rod

484‧‧‧電鍍484‧‧‧ Electroplating

486‧‧‧衝孔機486‧‧‧punching machine

488‧‧‧電鍍罩幕488‧‧‧Electroplating mask

490‧‧‧電鍍罩幕的內側端490‧‧‧Inside side of the electroplated mask

500‧‧‧引線框500‧‧‧ lead frame

502‧‧‧電鍍罩幕壩部502‧‧‧Electroplating dam section

510‧‧‧測定子510‧‧‧Measurer

512‧‧‧樹脂512‧‧‧Resin

514‧‧‧內部引線514‧‧‧Internal leads

A－A‧‧‧內部引線前端連結部的切斷線A-A‧‧‧ cut-off line for the inner lead end connection

B‧‧‧將電鍍罩幕設定在比配置於內部引線間的間隙的 樹脂還框架中心側的情形的位置B‧‧‧Set the plating mask to be smaller than the gap between the internal leads The position of the resin also on the center side of the frame

Bp‧‧‧接合點Bp‧‧‧ joint

C‧‧‧將電鍍罩幕設定在比配置於內部引線間的間隙的樹脂還框架側的情形的位置C‧‧‧The position where the plating mask is set on the frame side of the resin which is disposed in the gap between the inner leads

D‧‧‧將電鍍罩幕設定於樹脂上的情形的位置D‧‧‧Location where the plating mask is placed on the resin

E‧‧‧將電鍍罩幕設定在比配置在內部引線與晶片銲墊支撐桿之間的間隙的樹脂還框架側的情形的位置E‧‧‧Set the plating mask at a position on the frame side of the resin which is disposed in the gap between the inner lead and the wafer pad support rod

G‧‧‧從配置於內部引線間的間隙的樹脂的框架側的前端緣的位置一直到配置於內部引線與晶片銲墊支撐桿之間的間隙的樹脂框架中心側的前端緣為止的距離G‧‧‧Distance from the position of the front end edge of the resin on the frame side of the gap disposed between the inner leads to the front end edge of the resin frame center side disposed between the inner lead and the wafer pad support rod

F、F’‧‧‧配置於內部引線間的間隙的樹脂的框架中心側的彎月面點的所鄰接的內部引線的樹脂位置F, F'‧‧‧ Resin position of the adjacent inner lead of the meniscus point on the center side of the frame of the resin disposed in the gap between the inner leads

H、K‧‧‧內部引線的最前端H, K‧‧‧ the front end of the internal leads

H－H’、K－K’、I、I’‧‧‧內部引線的一邊One side of the inner lead of H-H’, K-K’, I, I’‧‧

J、J’‧‧‧配置於內部引線間的間隙的樹脂框架側的彎月面點的所鄰接的內部引線的樹脂位置J, J'‧‧‧Resin position of the adjacent inner lead of the meniscus point on the resin frame side of the gap between the internal leads

L‧‧‧樹脂固定距離L‧‧‧ resin fixed distance

Lm‧‧‧電鍍尺寸Lm‧‧‧ plating size

La‧‧‧從配置於內部引線間的間隙的樹脂框架側的前端緣一直到配置於內部引線與晶片銲墊支撐桿之間的間隙的樹脂框架中心側的前端緣為止的距離La‧‧‧The distance from the front end edge of the resin frame side disposed in the gap between the inner leads to the front end edge of the resin frame center side disposed between the inner lead and the wafer pad support rod

Lc‧‧‧內部引線前端連結部的切斷尺寸Lc‧‧‧ Cut-out dimensions of the inner lead front joint

Ld‧‧‧內部引線與晶片銲墊支撐桿之間的間隙Ld‧‧‧Gap between the inner lead and the wafer pad support rod

Lo‧‧‧從電鍍端覆蓋樹脂的尺寸Lo‧‧‧The size of the resin covered from the plating end

Ls‧‧‧從內部引線的最前端緣一直到樹脂為止的尺寸或是從前端連結部的切斷分離位置一直到樹脂的尺寸Ls‧‧‧The size from the foremost edge of the inner lead to the resin or from the cutting and separating position of the front end joint to the size of the resin

M‧‧‧從樹脂前端緣一直到引線接合位置為止距離M‧‧‧ Distance from the front edge of the resin to the wire bonding position

N、N’‧‧‧內部引線的一邊N, N’‧‧‧ one side of the inner lead

P‧‧‧與超音波振動方向垂直的方向的引線接合位置P‧‧‧ wire bonding position in a direction perpendicular to the direction of vibration of the ultrasonic wave

R、R’‧‧‧配罝於內部引線間的間隙的樹脂的彎月面最低的位置R, R'‧‧‧ The lowest position of the meniscus of the resin fitted to the gap between the internal leads

S、S’‧‧‧配置於內部引線與晶片銲墊支撐桿之間的間隙的樹脂的彎月面最低的位置S, S'‧‧‧ The lowest position of the meniscus of the resin disposed in the gap between the inner lead and the wafer pad support rod

T‧‧‧引線間樹脂的中心T‧‧‧Center of lead-to-lead resin

t‧‧‧引線框的厚度t‧‧‧Thick frame thickness

U‧‧‧與超音波振動方向45∘的方向的引線接合位置U‧‧‧ wire bonding position in the direction of the ultrasonic vibration direction 45∘

V‧‧‧與超音波振動方向平行的方向的引線接合位置V‧‧‧ wire bonding position in a direction parallel to the direction of vibration of the ultrasonic wave

W‧‧‧內部引線的寬度W‧‧‧Width of inner leads

Wr‧‧‧固定樹脂的寬度Wr‧‧‧Fixed resin width

Wt‧‧‧引線框的寬度Wt‧‧‧ width of lead frame

X‧‧‧配置於內部引線間的間隙的樹脂框架側的彎月面X‧‧‧ Meniscus on the side of the resin frame placed in the gap between the internal leads

Y、Y’‧‧‧配置於對應在R點的內部引線與晶片銲墊支撐桿之間的間隙的樹脂的晶片銲墊支撐桿的樹脂位置Y, Y'‧‧‧Resin position of the wafer pad support rod of the resin disposed in the gap corresponding to the inner lead of the R point and the wafer pad support rod

Z、Z’‧‧‧配置於對應在R’點的內部引線與晶片銲墊支撐桿之間的間隙的樹脂的晶片銲墊支撐桿的樹脂位置Z, Z'‧‧‧ Resin position of the wafer pad support rod of the resin disposed in the gap corresponding to the inner lead at the R' point and the wafer pad support rod

第1(A)圖至第1(C)圖是表示將樹脂液塗佈於內部引線上的情形的樹脂液的舉動的一例的圖式。1(A) to 1(C) are diagrams showing an example of the behavior of the resin liquid in the case where the resin liquid is applied to the inner lead.

第2圖是表示配置樹脂的態樣的圖式。Fig. 2 is a view showing a state in which a resin is disposed.

第3圖是表示內部引線前端的樹脂的配置的一例的圖式。Fig. 3 is a view showing an example of the arrangement of the resin at the tip end of the inner lead.

第4圖是表示內部引線前端的樹脂的配置的其他例的圖式。Fig. 4 is a view showing another example of the arrangement of the resin at the tip end of the inner lead.

第5圖是表示內部引線前端的樹脂的配置的其他例的圖式。Fig. 5 is a view showing another example of the arrangement of the resin at the tip end of the inner lead.

第6圖是表示螺旋式分配器的一例的圖式。Fig. 6 is a view showing an example of a spiral type distributor.

第7圖是表示用以說明以空氣式分散器塗佈樹脂液時的樹脂液的舉動的圖式。Fig. 7 is a view for explaining the behavior of the resin liquid when the resin liquid is applied by an air disperser.

第8圖是表示用以說明以螺旋式分散器塗佈樹脂液時的樹脂液的舉動的圖式。Fig. 8 is a view for explaining the behavior of the resin liquid when the resin liquid is applied by a spiral disperser.

第9圖是表示用以說明以所塗佈的液滴大時的問題的圖式。Fig. 9 is a view for explaining the problem when the applied droplets are large.

第10圖是表示用以說明以內部引線間的間隔等的測定方法的圖式。Fig. 10 is a view showing a measurement method for explaining the interval between internal leads and the like.

第11圖是表示用以說明以內部引線間的樹脂及內部引線與晶片銲墊支撐桿間的樹脂間的間隔等的測定方式的圖式。Fig. 11 is a view showing a measurement method for explaining the interval between the resin between the internal leads and the resin between the internal leads and the wafer pad support rod.

第12(A)圖至第12(C)圖是表示內部引線間的間隔及內部引線與晶片銲墊支撐桿的間隔不相同時的樹脂液的舉動的一例的圖式。12(A) to 12(C) are diagrams showing an example of the behavior of the resin liquid when the interval between the internal leads and the interval between the internal leads and the wafer pad support bars are different.

第13(A)圖至第13(C)圖是表示內部引線間的間隔及內部引線與晶片銲墊支撐桿的間隔不相同時的樹脂液的舉動的其他例的圖式。13(A) to 13(C) are diagrams showing other examples of the behavior of the resin liquid when the interval between the internal leads and the interval between the internal leads and the wafer pad support bars are different.

第14圖是表示內部引線間的間隔及內部引線與晶片銲墊支撐桿的間隔相同或大約相同時的以樹脂固定的引線框的一例的圖式。Fig. 14 is a view showing an example of a lead frame fixed by resin when the interval between the inner leads and the interval between the inner leads and the wafer pad support bars are the same or about the same.

第15(a)圖至第15(e)圖是表示用以說明引線框的製造工程的一例的圖式。15(a) to 15(e) are diagrams showing an example of a manufacturing process for explaining a lead frame.

第16圖是表示用以說明引線框的切斷位置的圖式。Fig. 16 is a view showing the cutting position of the lead frame.

第17(a)圖及第17(b)圖是表示用以說明引線框的電鍍工程的一例的圖式。FIGS. 17(a) and 17(b) are diagrams showing an example of an electroplating process for explaining a lead frame.

第18圖是表示內部引線與晶片銲墊支撐桿的間隔對於內部引線間的間隔的比率超過1.14時以樹脂固定的引線框的一例的圖式。Fig. 18 is a view showing an example of a lead frame fixed by resin when the ratio of the interval between the inner lead and the wafer pad support rod to the interval between the inner leads exceeds 1.14.

第19(a)圖至第19(e)圖是表示用以說明引線框的其他製造工程的其他例的圖式。19(a) to 19(e) are diagrams showing other examples of other manufacturing processes for explaining the lead frame.

第20(a)圖及第20(b)圖是表示用以說明引線框的其他電鍍工程的其他例的圖式。20(a) and 20(b) are diagrams showing other examples of other plating processes for explaining the lead frame.

第21圖是表示內部引線與晶片銲墊支撐桿之間隔對於內部引線間的間隔的比率超過1.14，且內部引線與晶片銲墊支撐桿的間隔超過170 μm時以樹脂固定的引線框的一例的圖式。Fig. 21 is a view showing an example of a lead frame fixed by resin when the ratio of the distance between the inner lead and the wafer pad support rod to the interval between the inner leads exceeds 1.14, and the distance between the inner lead and the wafer pad support rod exceeds 170 μm. figure.

第22(a)圖至第22(e)圖是表示用以說明引線框的其他製造工程的其他例的圖式。22(a) to 22(e) are diagrams showing other examples of other manufacturing processes for explaining the lead frame.

第23(a)圖及第23(b)圖是表示用以說明在內部引線與晶片銲墊支撐桿之間的間隙未配置樹脂時的電鍍工程的圖式。FIGS. 23(a) and 23(b) are diagrams for explaining an electroplating process when a gap between the inner lead and the wafer pad support bar is not disposed.

第24圖是表示用以說明測定內部引線的剛性的方法的圖式。Fig. 24 is a view for explaining a method of measuring the rigidity of the inner lead.

第25圖是表示內部引線的剛性測定結果的圖式。Fig. 25 is a view showing the result of measurement of the rigidity of the inner lead.

第26圖是表示用以說明引線接合的問題的圖式。Fig. 26 is a view showing the problem of wire bonding.

第27(a)圖及第27(b)圖是用以說明引線接合的評價方法的圖式。Figs. 27(a) and 27(b) are diagrams for explaining the evaluation method of wire bonding.

第28圖是表示引線接合的評價結果的圖式。Fig. 28 is a view showing the evaluation results of wire bonding.

第29(a)圖及第29(b)圖是用以說明引線接合的其他評價方法的圖式。Figures 29(a) and 29(b) are diagrams for explaining other evaluation methods of wire bonding.

第30圖是表示引線接合的評價結果的圖式。Fig. 30 is a view showing the evaluation results of wire bonding.

第31圖是表示引線接合間的樹脂配置狀態的圖式。Fig. 31 is a view showing a state of resin arrangement between wire bonding.

第32圖是表示內部引線前端的樹脂配置的其他例的圖式。Fig. 32 is a view showing another example of the resin arrangement at the tip end of the inner lead.

第33圖是表示內部引線前端的樹脂配置的其他例的圖式。Fig. 33 is a view showing another example of the resin arrangement at the tip end of the inner lead.

第34圖是表示內部引線前端的樹脂配置的其他例的圖式。Fig. 34 is a view showing another example of the resin arrangement at the tip end of the inner lead.

圖35是表示半導體裝置的構成例的圖式。35 is a view showing an example of the configuration of a semiconductor device.

第36圖是表示引線框構成的圖式。Figure 36 is a diagram showing the construction of a lead frame.

第37(a)圖及第37(b)圖是表示內部引線的一例的圖式。37(a) and 37(b) are diagrams showing an example of internal leads.

第38圖是表示引線框的一部分的圖式。Figure 38 is a diagram showing a part of a lead frame.

第39圖是表示用以說明引線間樹脂的接著強度的測定法的圖式。Fig. 39 is a view showing a measuring method for explaining the bonding strength of the inter-lead resin.

第40圖是表示用以說明框架的彎曲強度的測定法的圖式。Fig. 40 is a view showing a measurement method for explaining the bending strength of the frame.

第41圖是表示用以說明細線擺動的效果的圖式。Fig. 41 is a view showing the effect of explaining the swing of the thin line.

Claims (15)

一種引線框，具備：框架，及從該框架朝中心部延設的晶片銲墊支撐桿，及藉由該晶片銲墊支撐桿被固定在上述框架的中心部的晶片銲墊，及前端側從框架朝框架的中心部(在框中心側)所延設的複數內部引線，至少在上述內部引線的前端部設有剛性增強部的引線框，其特徵為：上述剛性增強部是以樹脂所固定者，鄰接的上述內部引線間的間隔為170μm以下的部位，且該框架中心側的前端緣被配置在從內部引線的最前端緣距1.2mm以下的位置，將被塗佈於上述內部引線的引線接合面的背面側的樹脂液，至少固裝於鄰接的內部引線間的間隙者。 A lead frame comprising: a frame, and a wafer pad support rod extending from the frame toward the center portion; and a wafer pad fixed to a central portion of the frame by the wafer pad support rod, and a front end side a plurality of inner leads extending from a frame toward a center portion of the frame (on the center side of the frame), and a lead frame having a rigidity reinforcing portion at least at a front end portion of the inner lead, wherein the rigidity reinforcing portion is fixed by a resin The space between the adjacent inner leads is 170 μm or less, and the front end edge of the frame center side is disposed at a position of 1.2 mm or less from the foremost edge of the inner lead, and is applied to the inner lead. The resin liquid on the back side of the wire bonding surface is at least fixed to the gap between the adjacent inner leads. 如申請專利範圍第1項所述的引線框，其中，上述剛性增強部的框架中心側的前端緣位於從內部的引線的最前端緣距0.1mm以上1.2mm以下的位置。 The lead frame according to claim 1, wherein the front end edge of the rigidity reinforcing portion on the center side of the frame is located at a position from the innermost edge of the lead wire of 0.1 mm or more and 1.2 mm or less. 如申請專利範圍第1項或第2項所述的引線框，其中，剛性增強部位的內部引線間的間隔與內部引線與晶片銲墊支撐桿之間的間隔為相同。 The lead frame according to claim 1 or 2, wherein the interval between the inner leads of the rigidity-enhancing portion is the same as the interval between the inner lead and the wafer pad support rod. 如申請專利範圍第1項或第2項所述的引線框，其中，在剛性增強部位，對上述晶片銲墊支撐桿設置開縫奬開口部。 The lead frame according to claim 1 or 2, wherein a slit-opening opening portion is provided to the wafer pad support rod at the rigidity-enhancing portion. 如申請專利範圍第1項或第2項所述的引線框，其中，剛性增強部位的內部引線與晶片銲墊支撐桿之間的間隔對於內部引線間的間隔的比率超過1.14，且位於內部 引線與晶片銲墊支撐桿之間的剛性增強部的框架中心側的前端緣位置比位於內部引線間的剛性增強部的框架側的前端緣位置還0.5mm以上位在框架側的位置。 The lead frame according to claim 1 or 2, wherein a ratio of an interval between the inner lead of the rigidity-enhancing portion and the wafer pad support rod to the interval between the inner leads exceeds 1.14, and is located inside The position of the front end edge of the center side of the frame of the rigidity reinforcing portion between the lead wire and the wafer pad support rod is more than 0.5 mm above the position of the front end edge of the frame side of the rigidity reinforcing portion between the inner lead wires at the frame side. 如申請專利範圍第1項或第2項所述的引線框，其中，剛性增強部位的內部引線與晶片銲墊支撐桿之間的間隔對於內部引線間的間隔的比率超過1.14，內部引線與晶片銲墊支撐之間的間隔超過170μm，且僅在內部引線間設有剛性增強部。 The lead frame according to claim 1 or 2, wherein a ratio of an interval between the inner lead of the rigid reinforcing portion and the support pad of the wafer pad to the interval between the inner leads exceeds 1.14, and the inner lead and the wafer The spacing between the pad supports exceeds 170 μm, and only the rigidity enhancement is provided between the inner leads. 如申請專利範圍第1項或第2項所述的引線框，其中，在上述剛性增強部中所固定的樹脂，為環氧樹脂及潛在性硬化劑所構成的一液型熱硬化性樹脂。 The lead frame according to the first or second aspect of the invention, wherein the resin fixed to the rigidity reinforcing portion is a one-component thermosetting resin composed of an epoxy resin and a latent curing agent. 一種半導體裝置，其特徵為：承載固定有申請專利範圍第1項至第7項中任一項所述的內部引線前端部的引線部的引線框。 A semiconductor device comprising a lead frame in which a lead portion of an inner lead tip end portion according to any one of claims 1 to 7 is fixed. 一種引線框的製造方法，具備：框架，及從該框架朝中心部延設的晶片銲墊支撐桿，及藉由該晶片銲墊支撐桿被固定在上述框架的中心部的晶片銲墊，及前端側從框架朝框架的中心部(在框中心側)所延設的複數內部引線，至少在上述內部引線的前端部設有剛性增強部的引線框，其特徵為：在鄰接的上述內部引線間的間隔為170μm以下的部位，將至少塗佈時的黏度為9.4Pa．s以上54Pa．s以下的樹脂液，或是，在鄰接的上述內部引線間的間隔為160μm以下的部位，將至少塗佈時的黏度為4Pa．s以上 54Pa．s以下的樹脂液，藉由螺旋式散布法塗佈在引線接合面的背面，而將利用表面張力所塗佈的樹脂液流動在上述內部引線間的間隙或上述內部引線間的間隙及內部引線與晶片銲墊支撐桿之間的間隙，然後藉由加熱來固裝樹脂而在內部引線的前端部形成剛性增強部，而切斷分離內部引線的前端連結部，以便上述剛性增強部的框架中心側前端緣的位置位於從內部引線的最前端緣距1.2mm以下的位置。 A method of manufacturing a lead frame, comprising: a frame; and a wafer pad support rod extending from the frame toward the center portion; and a wafer pad fixed to a central portion of the frame by the wafer pad support rod, and a plurality of inner leads extending from the frame toward the center of the frame (on the side of the frame center), and a lead frame having a rigidity reinforcing portion at least at a front end portion of the inner lead, wherein the inner lead adjacent to the inner lead The interval between the intervals of 170 μm or less is at least 9.4 Pa when applied. s above 54Pa. The resin liquid below s or the portion where the interval between the adjacent inner leads is 160 μm or less, the viscosity at the time of coating is at least 4 Pa. s or more 54Pa. The resin liquid below s is applied to the back surface of the wire bonding surface by a spiral dispersion method, and the resin liquid applied by the surface tension flows in the gap between the internal leads or the gap between the internal leads and the internal leads a gap with the wafer pad support rod, and then fixing the resin by heating to form a rigidity reinforcing portion at the front end portion of the inner lead, and cutting off the front end connecting portion of the separated inner lead so as to be the center of the frame of the rigidity reinforcing portion The position of the side front edge is located at a position which is less than 1.2 mm from the foremost edge of the inner lead. 如申請專利範圍第9項所述的引線框的製造方法，其中，將切斷分離上述內部引線的前端連結部的位置，作成位於從上述內部引線的最前端緣距0.1mm以上1.2mm以下的位置。 The method of manufacturing a lead frame according to claim 9, wherein the position of the distal end connecting portion of the inner lead is cut and separated, and the distance from the foremost edge of the inner lead is 0.1 mm or more and 1.2 mm or less. position. 如申請專利範圍第9項或第10項所述的引線框的製造方法，其中，將剛性增強部位的內部引線與晶片銲墊支撐桿之間的間隔及內部引線間的間隔作成相同。 The method of manufacturing a lead frame according to claim 9 or claim 10, wherein the interval between the inner lead of the rigidity-enhancing portion and the wafer pad support rod and the interval between the inner leads are made the same. 如申請專利範圍第9項或第10項所述的引線框的製造方法，其中，在剛性增強部位中，在上述晶片銲墊支撐桿設於開縫狀的開口部。 The method of manufacturing a lead frame according to claim 9 or claim 10, wherein the wafer pad support rod is provided in the slit-shaped opening portion in the rigidity-enhancing portion. 如申請專利範圍第9項或第10項所述的引線框的製造方法，其中，剛性增強部位的內部引線與晶片銲墊支撐桿之間的間隔對於內部引線間的間隔的比率超過1.14，且位於內部引線與晶片銲墊支撐桿之間的剛性增強部的框架中心側的前端緣位置比位於內部引線間的剛性增強部的框架側的前端緣位置還0.5mm以上位在框架側的位 置。 The method of manufacturing a lead frame according to claim 9 or claim 10, wherein a ratio of an interval between the inner lead of the rigidity-enhancing portion and the wafer pad support rod to the interval between the inner leads exceeds 1.14, and The front end edge position of the center side of the frame of the rigidity reinforcing portion between the inner lead and the wafer pad support rod is more than 0.5 mm above the frame side of the rigidity side of the rigidity reinforcing portion between the inner leads. Set. 如申請專利範圍第9項或第10項所述的引線框的製造方法，其中，剛性增強部位的內部引線與晶片銲墊支撐桿之間的間隔作為超過170μm者，而將樹脂液僅塗佈於內部引線間的間隙。 The method of manufacturing a lead frame according to claim 9 or claim 10, wherein the interval between the inner lead of the rigidity-enhancing portion and the wafer pad support rod is more than 170 μm, and the resin liquid is coated only. The gap between the internal leads. 如申請專利範圍第9項或第10項所述的引線框的製造方法，其中，作為上述剛性增強部所固定的樹脂，使用環氧樹脂及潛在性硬化劑所構成的一液型熱硬化性樹脂。 The method for producing a lead frame according to claim 9 or claim 10, wherein the resin to be fixed by the rigidity reinforcing portion is a one-pack type thermosetting property comprising an epoxy resin and a latent curing agent. Resin.
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KR20110038620A (en) * 2008-07-10 2011-04-14 시마 덴시 가부시키가이샤 Leadframe and method for manufacturing the same
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0294552A (en) * 1988-09-30 1990-04-05 Mitsui High Tec Inc Manufacture of lead frame and semiconductor device
JPH0730054A (en) * 1993-07-15 1995-01-31 Toppan Printing Co Ltd Manufacture of lead frame
JPH07335817A (en) * 1994-06-10 1995-12-22 Dainippon Printing Co Ltd Lead frame member
JPH0878605A (en) * 1994-09-01 1996-03-22 Hitachi Ltd Lead frame and semiconductor integrated circuit device utilizing the same
US5939775A (en) * 1996-11-05 1999-08-17 Gcb Technologies, Llc Leadframe structure and process for packaging intergrated circuits
JP2005185916A (en) * 2003-12-25 2005-07-14 Sony Corp Screw type dispenser

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05226570A (en) * 1992-02-14 1993-09-03 Oki Electric Ind Co Ltd Manufacture of lead frame
JP2006108306A (en) * 2004-10-04 2006-04-20 Yamaha Corp Lead frame and semiconductor package employing it

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0294552A (en) * 1988-09-30 1990-04-05 Mitsui High Tec Inc Manufacture of lead frame and semiconductor device
JPH0730054A (en) * 1993-07-15 1995-01-31 Toppan Printing Co Ltd Manufacture of lead frame
JPH07335817A (en) * 1994-06-10 1995-12-22 Dainippon Printing Co Ltd Lead frame member
JPH0878605A (en) * 1994-09-01 1996-03-22 Hitachi Ltd Lead frame and semiconductor integrated circuit device utilizing the same
US5939775A (en) * 1996-11-05 1999-08-17 Gcb Technologies, Llc Leadframe structure and process for packaging intergrated circuits
JP2005185916A (en) * 2003-12-25 2005-07-14 Sony Corp Screw type dispenser

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