JP2012109435A - Method for manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of preventing or suppressing reliability degradation.SOLUTION: In a molde process, an angle of an extension direction of a wire 5 relative to a flow direction of a resin is brought close to 0° in a region at an exhaust part side where wire sweep failure is easy to generate. A lead 4 in which the wire sweep failure is easy to generate, connects the wire 5 to an overhang region 4f arranged adjacent to a central region 4e. The central region 4e has a region having a width equal to that of the extension part 4a as the center axis, the central line (virtual line) CL from the center of the border line of the extension part 4a and a tip part 4b to the center of an end side at the tip surface 4c side of the tip part 4b. In contrast, the overhang region 4f is arranged adjacent to the central region 4e, and projects from the central region 4e along a first direction Y.

Description

  The present invention relates to a manufacturing technique of a semiconductor device, and relates to a technique effective when applied to a semiconductor device in which a wire connecting a semiconductor chip and a plurality of leads is sealed with a resin.

  Japanese Patent Application Laid-Open No. 59-10249 (Patent Document 1) describes a semiconductor device in which a plurality of leads are arranged along the opposing long sides of a semiconductor chip having a substantially rectangular planar shape.

JP 59-10249 A

  In a semiconductor device, a plurality of leads are arranged along long sides facing each other of a sealing body having a substantially rectangular planar shape, so-called SOP (Small Outline Package) or SON (Small Outline Non There is a semiconductor device called -leaded package. In this SOP type or SON type semiconductor device, a semiconductor chip is mounted on a die pad, and a plurality of electrode pads formed on the main surface of the semiconductor chip and a plurality of leads are respectively connected via a plurality of wires. Connect electrically. Thereafter, the semiconductor chip, the plurality of wires, and the plurality of leads are resin-sealed to form a sealing body. In the molding process for forming the sealing body, the resin is supplied from one short side where a plurality of leads are not arranged toward the other short side facing the short side.

  However, as a result of the study of the SOP type or SON type semiconductor device by the inventor of the present application, it has been found that the following problems that cause a reduction in the reliability of the semiconductor device occur. That is, in the molding process, a defect that the wire is deformed in the resin flow direction (wire flow defect) occurs. When the wire is deformed in the resin flow direction, the distance from the adjacent wire is shortened, and a short circuit failure is likely to occur. Further, when the deformation amount of the wire is large, the connection reliability at the bonding portion of the wire and the electrode pad or the wire and the lead is lowered. That is, the reliability of the semiconductor device is reduced.

  The present invention has been made in view of the above problems, and an object thereof is to provide a technique for preventing or suppressing a decrease in reliability of a semiconductor device.

  The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

  Of the inventions disclosed in the present application, the outline of typical ones will be briefly described as follows.

  That is, in the method for manufacturing a semiconductor device which is one embodiment of the present invention, the first and second long sides which are arranged along the first direction and face each other are orthogonal to the first direction in plan view. A method for manufacturing a semiconductor device having a sealing body that seals a semiconductor chip and has first and second short sides that are arranged along a second direction and that face each other, and includes the following steps: It is out. (A) a die pad having an upper surface and a lower surface opposite to the upper surface; a plurality of suspension leads connected to the die pad; and a plurality of suspension leads disposed along each of the first and second long sides. Providing a lead frame having a product forming area with leads. In addition, (b) a semiconductor chip having a first main surface having a quadrangular planar shape, a plurality of electrode pads formed on the first main surface, and a second main surface opposite to the first main surface. In plan view so that the first side, the second side, the third side, and the fourth side of the first main surface are aligned with the first, second long side, and the first and second short sides, respectively. Mounting on the upper surface of the die pad. Further, (c) includes a step of electrically connecting the plurality of electrode pads and the plurality of leads of the semiconductor chip through a plurality of wires, respectively. And (d) a mold having a cavity covering the product formation region, a supply part arranged on the first short side of the cavity, and a discharge part arranged on the second short side of the cavity. Disposing the semiconductor chip in the cavity, supplying resin from the supply unit toward the discharge unit, sealing the semiconductor chip, the plurality of wires, and the plurality of leads with the resin, A step of forming a sealing body. The first lead of the plurality of leads, which has a front end surface along the first direction and is disposed on the discharge portion side, is the second lead from the first or second long side. An extending portion extending along the direction, and a distal end portion that has the distal end surface located on the die pad side with respect to the extending portion and is integrally formed with and connected to the extending portion.

  The distal end portion has the same width as the extending portion with a line connecting the center of the boundary line between the extending portion and the distal end portion and the center of the end side of the distal end portion on the distal end surface side as a central axis. And a projecting region projecting from the central region along the first direction. In the step (c), one of the first wires of the plurality of wires is connected to the first electrode pad of the plurality of electrode pads, and the other of the first wires is connected to the first lead. It connects with the said overhang | projection area | region.

  The effects obtained by typical ones of the inventions disclosed in the present application will be briefly described as follows.

  That is, according to one embodiment of the present invention, it is possible to prevent or suppress a decrease in reliability of the semiconductor device.

It is a top view of the semiconductor device which is one embodiment of the present invention. FIG. 2 is a plan view showing an internal structure of the semiconductor device shown in FIG. 1. It is sectional drawing along the AA line of FIG. It is sectional drawing along the BB line of FIG. FIG. 3 is an enlarged plan view of a portion C in FIG. 2. FIG. 3 is an enlarged plan view of a D part in FIG. 2. FIG. 3 is an enlarged plan view of an E part in FIG. 2. FIG. 3 is an enlarged plan view of an F part in FIG. 2. FIG. 6 is an enlarged plan view of the periphery of a tip portion of a lead having a tip surface facing the long side of the die pad among the plurality of leads shown in FIG. 5. FIG. 8 is an enlarged plan view of the periphery of the tip of the lead having a tip surface facing the long side of the die pad among the plurality of leads shown in FIG. 7. It is explanatory drawing which shows the assembly flow of the semiconductor device which is one embodiment of this invention. It is a top view which shows the lead frame prepared by a lead frame preparation process. FIG. 13 is an enlarged plan view of an S part in FIG. 12. It is an enlarged plan view which shows the state which mounted the semiconductor chip on the die pad shown in FIG. 13 via the bonding material. It is an expanded sectional view along the GG line of FIG. FIG. 15 is an enlarged plan view showing a state where the semiconductor chip and a plurality of leads shown in FIG. 14 are electrically connected via wires. It is an expanded sectional view along the HH line of FIG. FIG. 17 is a plan view showing a state where a sealing body is formed in the product formation region of the lead frame shown in FIG. 16. FIG. 19 is an enlarged plan view of an S part in FIG. 18. FIG. 20 is an enlarged cross-sectional view taken along line JJ in FIG. 19, showing a state in which resin is supplied into the molding die in the molding process. FIG. 20 is an enlarged cross-sectional view taken along the line KK of FIG. 19, showing a state in which resin is supplied into the molding die in the molding process. FIG. 20 is a first plan enlarged plan view showing a flow direction when the resin shown in FIG. 19 is supplied. FIG. 20 is an enlarged plan view of a second stage, showing a flow direction when the resin shown in FIG. 19 is supplied. FIG. 20 is an enlarged plan view of a third stage, showing a flow direction when the resin shown in FIG. 19 is supplied. FIG. 20 is an enlarged plan view of a fourth stage, showing a flow direction when the resin shown in FIG. 19 is supplied. FIG. 20 is an enlarged plan view of a fifth stage, showing a flow direction when the resin shown in FIG. 19 is supplied. FIG. 27 is an enlarged plan view showing the relationship between the region where wire flow failure is likely to occur and the bonding position to the lead. FIG. 28 is a modification of FIG. 27, and is an enlarged plan view showing a fourth row of product formation regions among the plurality of product formation regions shown in FIG. 18. It is a modification with respect to FIG. 7, Comprising: It is an enlarged plan view corresponding to the vent part periphery shown in FIG. It is a modification with respect to FIG. 8, Comprising: It is an enlarged plan view corresponding to the vent part periphery shown in FIG. FIG. 28 is a modification of FIG. 27, and is an enlarged plan view showing each product formation region from the first row to the third row among the plurality of product formation regions shown in FIG. 18. FIG. 28 is a modification of FIG. 27, and is an enlarged plan view showing a product formation region in the first row or the third row among the plurality of product formation regions shown in FIG. 18. It is a modification with respect to FIG. 19, and is an enlarged plan view which shows the flow direction of resin. FIG. 11 is a modified example with respect to FIG. 10, and is an enlarged plan view of the periphery of a lead portion having a tip surface facing the long side of the die pad among a plurality of leads. It is an enlarged plan view which shows the modification with respect to FIG.

(Description format, basic terms, usage in this application)
In the present application, the description of the embodiment will be divided into a plurality of sections for convenience, if necessary, but these are not independent from each other unless otherwise specified. Regardless of the front and rear, each part of a single example, one is a part of the other, or a part or all of the modifications. In principle, repeated description of similar parts is omitted. In addition, each component in the embodiment is not indispensable unless specifically stated otherwise, unless it is theoretically limited to the number, and obviously not in context.

  Similarly, in the description of the embodiment, etc., regarding the material, composition, etc., “X consisting of A” etc. is an element other than A unless specifically stated otherwise and clearly not in context. It does not exclude things that contain. For example, as for the component, it means “X containing A as a main component”. For example, “silicon member” is not limited to pure silicon, but includes a SiGe (silicon-germanium) alloy, other multi-component alloys containing silicon as a main component, and other additives. Needless to say, it is also included. Moreover, even if it says gold plating, Cu layer, nickel / plating, etc., unless otherwise specified, not only pure materials but also members mainly composed of gold, Cu, nickel, etc. Shall be included.

  In addition, when a specific number or quantity is mentioned, a numerical value exceeding that specific number will be used unless specifically stated otherwise, unless theoretically limited to that number, or unless otherwise clearly indicated by the context. There may be a numerical value less than the specific numerical value.

  Moreover, in each figure of embodiment, the same or similar part is shown with the same or similar symbol or reference number, and description is not repeated in principle.

  In the accompanying drawings, hatching or the like may be omitted even in a cross section when it becomes complicated or when the distinction from the gap is clear. In relation to this, when it is clear from the description etc., the contour line of the background may be omitted even if the hole is planarly closed. Furthermore, even if it is not a cross section, hatching or a dot pattern may be added in order to clearly indicate that it is not a void or to clearly indicate the boundary of a region.

  In this embodiment, as an example of a semiconductor device, an embodiment applied to an SOP type semiconductor device will be described. 1 is a top view of the semiconductor device of the present embodiment, FIG. 2 is a plan view showing the internal structure of the semiconductor device shown in FIG. 1, FIG. 3 is a cross-sectional view taken along line AA in FIG. FIG. 2 is a cross-sectional view taken along line BB in FIG. 1.

<Semiconductor device>
First, an outline of a configuration of an SOP (semiconductor device) 1 according to the present embodiment will be described with reference to FIGS. As shown in FIGS. 1 to 4, the SOP 1 of this embodiment includes a die pad 2 (see FIGS. 2 to 4) and a semiconductor chip CH mounted on the die pad 2 via a die bond material (FIGS. 2 to 4). 4). The SOP 1 includes a plurality of leads 4 (see FIGS. 2 and 3) arranged around the semiconductor chip CH, a plurality of pads PD (see FIGS. 2 and 3) and a plurality of leads 4 in the semiconductor chip CH. And a plurality of wires 5 (see FIGS. 2 and 3) that are electrically connected to each other. The SOP 1 includes a sealing body (resin body formed by curing resin) 6 that seals the semiconductor chip CH, the plurality of wires 5, and the plurality of leads 4. A plurality of suspension leads 9 (see FIGS. 2 and 4) are connected to the die pad 2. The plurality of suspension leads 9 are formed integrally with the die pad 2, and the die pads are supported by the plurality of suspension leads 9.

<Appearance structure>
Next, the external structure of SOP1 will be described. The planar shape of the sealing body 6 shown in FIG. 1 is a substantially rectangular shape having four main sides. Specifically, the sealing body 6 has a long side 6a and a long side 6b that are arranged along the first direction Y and face each other in plan view. Moreover, it has the short side 6c and the short side 6d which are arrange | positioned along the 2nd direction X orthogonal to the 1st direction Y, and mutually oppose. The long sides 6 a and 6 b and the short sides 6 c and 6 d correspond to the four main sides of the sealing body 6. Further, chamfering is performed at the four corners between the main sides, thereby suppressing chipping of the sealing body 6. The sealing body 6 has an upper surface 6e, a lower surface (back surface, mounting surface) 6f opposite to the upper surface 6e (see FIG. 3), and a side surface 6g located between the upper surface 6e and the lower surface 6f. ing. The side surface 6g is an inclined surface as shown in FIGS.

  As shown in FIGS. 1 and 2, a plurality of leads 4 are arranged on the long sides 6a and 6b side of the sealing body 6 along the long sides 6a and 6b. On the other hand, the lead 4 is not disposed on the short sides 6c and 6d side. The plurality of leads 4 are each made of a metal material, and in the present embodiment, are made of, for example, copper (Cu). Specifically, a plating conductor film (not shown) made of, for example, nickel (Ni) is formed on the surface of a base material made of copper (Cu). In the present embodiment, for example, 24 leads are arranged along the long sides 6a and 6b, respectively. As shown in FIGS. 2 and 3, a part (inner lead portion) of each of the plurality of leads 4 is disposed inside the sealing body 6 along the second direction X from the side surface 6 g and sealed by the sealing body 6. It has been stopped. Further, the other portions of the leads 4 (outer lead portions formed integrally with the inner lead portions) are arranged on the outer side of the sealing body 6 along the second direction X from the side surface 6g. Exposed. In other words, the plurality of leads 4 extend from the inside of the sealing body 6 toward the long sides 6 a and 6 b along the second direction X, respectively, and the outer lead portions are exposed outside the sealing body 6. Further, as shown in FIG. 3, the outer lead portion of the lead 4 is bent toward the lower surface 6f on the outside of the sealing body 6, and is formed in a gull wing shape. The plurality of leads 4 are external connection terminals (external terminals) when the SOP 1 is mounted on a mounting board (not shown), and a plurality of terminals formed on the mounting surface of the mounting board and a bonding material such as a solder material It is electrically connected via. For this reason, the lowermost surfaces of the outer lead portions of the plurality of leads 4 are arranged at positions lower than the lower surface 6 f of the sealing body 6. An outer conductor film (not shown) made of, for example, solder is formed on the surface of the outer lead portion of the plurality of leads 4 in order to improve the connectivity (wetting properties) between the leads 4 and the bonding material during mounting. Yes.

<Internal structure>
Next, the internal structure of SOP1 will be described. As shown in FIG. 3, the die pad 2 has an upper surface (chip mounting surface) 2e and a lower surface 2f located on the opposite side of the upper surface 2e. Each of the upper surface 2e and the lower surface 2f of the die pad 2 has, for example, a rectangular planar shape as shown in FIG. Each side of the die pad 2 is arranged along each side of the sealing body 6. In other words, the die pad 2 includes the long sides 2a and 2b along the long sides 6a and 6b of the sealing body 6 and the long sides 2c along the short sides 6c and 6d of the sealing body 6 as shown in FIG. 2d. In the present embodiment, the outer size (planar size) of the die pad 2 is larger than the outer size of the semiconductor chip CH.

  A semiconductor chip CH is mounted on the die pad 2. In the present embodiment, a plurality (two in FIG. 2) of semiconductor chips CH1 and CH2 are mounted on the die pad 2. The plurality of semiconductor chips CH are mounted on the die pad 2 via a die bond material (adhesive) with the lower surface (main surface, back surface) 3f (see FIG. 3) facing the upper surface 2e of the die pad 2, respectively. Yes. That is, the so-called so-called surface (lower surface 3f) opposite to the upper surface (main surface, surface) 3e (see FIG. 3) on which a plurality of pads (electrode pads, bonding pads) PD are formed is opposed to the chip mounting surface (upper surface 2e). It is mounted by the face-up mounting method. This die-bonding material is an adhesive when die-bonding the semiconductor chip CH. For example, a die-bonding material in which metal particles made of silver (Ag) or the like are contained in an epoxy thermosetting resin is used. .

  The planar shape of the semiconductor chip CH mounted on the die pad 2 (in this embodiment, the planar shape of each of the semiconductor chips CH1 and CH2) is a quadrangle. Each side of the semiconductor chip CH is arranged along each side of the sealing body 6. In other words, each of the plurality of semiconductor chips CH extends along the sides 3a and 3b along the long sides 6a and 6b of the sealing body 6 and the short sides 6c and 6d of the sealing body 6 as shown in FIG. It has sides 3c and 3d. As shown in FIG. 3, the semiconductor chip CH includes an upper surface (main surface, front surface) 3e, a lower surface (main surface, back surface) 3f opposite to the upper surface 3e, and a space between the upper surface 3e and the lower surface 3f. And a side surface. Further, a plurality of pads PD are formed on the upper surface 3e of the semiconductor chip CH, and in the present embodiment, the plurality of pads PD are along each side (sides 3a, 3b, 3c, 3d) of the upper surface 3e. Is formed.

  Although not shown, the main surface of the semiconductor chip CH (specifically, the semiconductor element formation region provided on the upper surface (main surface, semiconductor element formation surface) of the base material (semiconductor substrate) of the semiconductor chip CH) A plurality of semiconductor elements (circuit elements) are formed. The plurality of pads PD are connected to the semiconductor element CH via wiring (not shown) formed in a wiring layer disposed inside the semiconductor chip CH (specifically, between the upper surface 3e and a semiconductor element formation region not shown). And are electrically connected. The semiconductor chip CH (specifically, the base material of the semiconductor chip CH) is made of, for example, silicon (Si). In addition, an insulating film is formed on the upper surface 3e to cover the base material and wiring of the semiconductor chip CH, and the respective surfaces of the plurality of pads PD are exposed from the insulating film at the openings formed in the insulating film. is doing. Further, the pad PD is made of metal, and in the present embodiment, it is made of, for example, aluminum (Al). Further, a plating film is formed on the surface of the pad PD. In this embodiment, for example, a multilayer structure in which a gold (Au) film is formed via a nickel (Ni) film is used. By covering the surface of the pad PD with a nickel film, corrosion (contamination) of the pad PD can be suppressed.

  A plurality of leads 4 made of, for example, the same copper (Cu) as that of the die pad 2 are arranged around the semiconductor chip CH (specifically, around the die pad 2). The plurality of pads PD formed on the upper surface 3 e of the semiconductor chip CH are connected to the plurality of leads 4 (inner lead portions) located inside the sealing body 6 and the plurality of wires (conductive members) 5. Each is electrically connected. The wire 5 is made of, for example, gold (Au), and a part (for example, one end) of the wire 5 is bonded to the pad PD, and the other part (for example, the other end) is bonded to the bonding region of the lead 4. ing. Although not shown, a conductor film is formed on the surface of the bonding region of the lead 4 (specifically, the surface of a plating film made of nickel (Ni)). The conductor film is made of, for example, silver (Ag) or gold (Au). By forming a conductor film made of silver (Ag) or gold (Au) on the surface of the bonding region of the lead 4, the bonding strength with the wire 5 made of gold (Au) can be improved. A more detailed structure of the lead 4 and details of the bonding region of the wire 5 will be described later.

  As shown in FIG. 2, a plurality of (three in FIG. 2) suspension leads 9 are connected (coupled) to the die pad 2. Each of the plurality of suspension leads 9 has one end connected to the short side of the die pad 2. Each of the plurality of suspension leads 9 has the other end extending in the first direction Y toward the short sides 6c and 6d of the sealing body 6 and exposed from the sealing body 6 outside the short sides 6c and 6d. ing. That is, the plurality of leads 4 are arranged on the long sides 6a and 6b, respectively, and are not arranged on the short sides 6c and 6d side. On the other hand, the plurality of suspension leads 9 are disposed on the short sides 6c and 6d, respectively, and are not disposed on the long sides 6a and 6b side. Thus, by arranging the suspension leads 9 on the short sides 6c and 6d, the arrangement of the plurality of leads 4 arranged on the long sides 6a and 6b side can be arranged without hindering, so that the arrangement density can be increased. . Further, the number of external connection terminals can be increased by arranging the plurality of leads 4 which are external connection terminals of the SOP 1 on the long sides 6a and 6b side. Each of the plurality of suspension leads 9 has a bent portion, and the height of the die pad 2 in the sealing body 6 is arranged at a position different from the height of the lead 4 (offset arrangement). In the present embodiment, as shown in FIG. 3, the die pad 2 is arranged at a position lower than the lead 4 (downset arrangement). Since the position of the die pad 2 is offset in this way, the semiconductor chip CH can be arranged at the substantially center in the thickness direction of the sealing body 6, so that the semiconductor chip CH, the die pad 2, the wire 5, and the lead 4 A part can be reliably sealed.

<Lead details>
Next, details of the plurality of leads 4 shown in FIG. 3 will be described. 5 is an enlarged plan view of part C in FIG. 2, FIG. 6 is an enlarged plan view of part D in FIG. 2, FIG. 7 is an enlarged plan view of part E in FIG. 2, and FIG. FIG. FIG. 9 is an enlarged plan view of the periphery of a lead having a tip surface facing the long side of the die pad among the plurality of leads shown in FIG. 5, and FIG. 10 is a diagram of the plurality of leads shown in FIG. FIG. 5 is an enlarged plan view of the periphery of the tip of the lead having a tip surface facing the long side of the die pad. As shown in FIGS. 5 to 8, each of the plurality of leads 4 has an extending portion 4 a extending along the second direction X from one long side of the long sides 6 a and 6 b toward the other long side. is doing. Each of the plurality of leads 4 has a tip surface 4c (side surface of the lead 4 on the die pad 2 side) located on the die pad 2 side (in other words, on the semiconductor chip CH side) with respect to the extending portion 4a. It has the front-end | tip part 4b (area | region shown with hatching in FIGS. 5-8) formed integrally with 4a and connected. The tip portion 4b is a bonding region for the lead 4, and each of the plurality of wires 5 is connected (joined) to the tip portion 4b.

  Further, among the front end surfaces 4 c of the plurality of leads 4, the front end surfaces 4 c disposed to face the long sides 2 a and 2 b of the die pad 2 are arranged along the first direction Y. The lead 4 having the front end surface 4c arranged along the first direction Y is arranged along the sides 3a and 3b (sides along the first direction Y) among the plurality of pads PD of the semiconductor chip CH. Each is electrically connected to the pad PD. In other words, the front end surface 4c of the lead 4 electrically connected to the pad PD arranged along the sides 3a and 3b (side along the first direction Y) of the semiconductor chip CH is opposed to the sides 3a and 3b. It arrange | positions along the 1st direction Y so that it may. On the other hand, among the plurality of leads 4, the leads 4 arranged outside the long sides 2 a, 2 b of the die pad 2 (on the short sides 6 c, 6 d side of the sealing body 6) are inside the sealing body 6. Are bent toward the short sides 2c and 2d (sides 3c and 3d of the semiconductor chip CH). The leading end surfaces 4c of these leads 4 are arranged so as to be inclined with respect to the first direction Y. Each of the leads whose front end surface 4c is inclined with respect to the large one direction Y is bent toward the side 3c or the side 3d inside the sealing body 6 and directed toward the side 3c or the side 3d with respect to the first direction Y. And a tip portion 4b having the tip surface and integrally formed with the extending portion and connected thereto. The lead 4 having the tip surface 4c arranged to be inclined with respect to the first direction Y is on the sides 3c and 3d (sides along the second direction X) among the plurality of pads PD included in the semiconductor chip CH. The pads PD are electrically connected to the pads PD arranged along the lines. In other words, the front end surface 4c of the lead 4 electrically connected to the pad PD disposed along the sides 3c and 3d (side along the second direction X) of the semiconductor chip CH is opposed to the sides 3c and 3d. It arrange | positions along the 2nd direction X so that. That is, in the present embodiment, the front end surfaces 4 c of the plurality of leads 4 are respectively disposed so as to face the pads PD connected via the wires 5. Thus, by arranging the front end surface 4c of the lead 4 and the pad PD to face each other, the lengths of the plurality of wires 5 can be made uniform. If the lengths of the wires 5 are equalized, an increase in impedance component due to the layout of the terminals (pad PD and lead 4) can be suppressed, so that the electrical characteristics of the SOP 1 can be stabilized and the reliability can be improved. it can.

  Further, as described above, each of the plurality of wires 5 is connected (joined) to the tip portion 4b of the lead 4, but in this embodiment, depending on the position of the tip portion 4b of the lead 4 in plan view, The regions where the wires 5 are joined are different. More specifically, when the long sides 6a and 6b of the sealing body 6 shown in FIG. 2 are divided into three equal parts, in the region 10a2 arranged on the short side 6c side than the region 10a1 arranged on the short side 6d side, As shown in FIGS. 5, 6 and 9, the wire 5 is joined to the central region 4e of the tip portion 4b. On the other hand, when the long sides 6a and 6b of the sealing body 6 shown in FIG. 2 are divided into three equal parts, in the region 10a1 arranged closest to the short side 6d, as shown in FIGS. The wire 5 is joined to the overhanging region 4f that protrudes along the first direction Y from the central region 4e of the portion 4b. The central region 4e and the overhang region 4f of the tip 4b are defined as follows. That is, as shown in FIG. 9 and FIG. 10 with hatching, the central region 4e has the center of the boundary line between the extending portion 4a and the tip portion 4b and the center of the end side on the tip surface 4c side of the tip portion 4b. This is an area having the same width as the extending portion 4a with the center line (virtual line) CL to be connected as the central axis. The end side on the distal end surface 4c side of the distal end portion 4b is a side (front end side) that intersects the upper surface that is the wire bonding surface of the distal end portion 4b among the sides provided on the distal end surface 4c constituting the side surface of the lead 4. is there. As shown in FIGS. 9 and 10, this end side is disposed on the semiconductor chip CH side (die pad 2 side) with respect to the boundary line between the extending portion 4 a and the tip portion 4 b so as to face the boundary line. . On the other hand, the overhanging region 4f is a region that is arranged adjacent to the central region 4e and overhangs in the first direction Y from the central region 4e.

  In the wire bonding step to be described later, from the viewpoint of reliably bonding the wire 5 and the lead 4, it is preferable to bond to the central region 4e as shown in FIG. This is because the lead 4 can be bonded even if the bonding position is slightly shifted during wire bonding. However, in the present embodiment, in the molding process described later, from the viewpoint of suppressing deformation of the wire 5, the wire 5 is bonded to the overhanging region 4 f for some of the leads 4.

  Although details of the molding process will be described later, the effect of bonding the wire 5 to the overhanging region 4f will be briefly described below. In the manufacturing process of the SOP 1, the plurality of leads 4 are arranged along the long sides 6 a and 6 b facing each other. Therefore, in the molding process employing the so-called transfer molding method, one lead 4 is not arranged. Resin (a sealing resin that hardens and becomes the sealing body 6) is supplied from the side 6c toward the other short side 6d. For this reason, the resin flows along the long sides 6a and 6b.

  Here, depending on the angle formed by the flow direction of the resin and the extending direction of the wire 5, a defect (wire flow defect) in which the wire 5 is deformed by the pressure received from the resin may occur. When the length of the wire 5 is constant, this wire flow failure is most likely to occur when the angle formed by the resin flow direction and the wire 5 extension direction is 90 degrees. It hardly occurs when the angle formed by the extending direction is 0 degree. Therefore, the wire flow defect can be suppressed by extending the wire 5 in a direction that forms an angle close to 0 degrees with respect to the resin flow direction. When applied to FIG. 10, the resin flows along the first direction Y in the molding process. For this reason, if the wire 5 is joined to the overhang region 4f, the angle formed by the extending direction of the wire 5 and the flow direction of the resin (first direction Y) is closer to 0 degrees than when the wire 5 is joined to the central region 4e. It will be. As a result, wire flow failure can be suppressed. That is, it is possible to suppress a decrease in reliability of the SOP 1 due to wire flow failure.

  Further, the wire flow failure hardly occurs around the resin supply part, and easily occurs around the discharge part. This is probably because when the resin is supplied to the periphery of the discharge part, the volume of the hollow space is reduced, so that the internal pressure increases, and the pressure of the resin increases accordingly. Accordingly, in the region where the wire flow failure is likely to occur (the region on the short side 6d side when the long sides 6a and 6b of the sealing body 6 shown in FIG. If 5 is joined to the overhang | projection area | region 4f, a wire flow defect can be suppressed. In this case, in the region on the short side 6c side (region on the supply unit side) from the center of the long sides 6a and 6b of the sealing body 6 shown in FIG. The wire 5 can be bonded to the central region 4e. For this reason, the wire 5 and the lead 4 can be reliably joined. That is, it is possible to suppress a decrease in reliability due to wire bonding failure between the wire 5 and the lead 4.

<Manufacturing process of semiconductor device>
Next, the manufacturing process of SOP1 shown in FIGS. 1-10 is demonstrated. SOP1 in this Embodiment is manufactured along the assembly flow shown in FIG. FIG. 11 is an explanatory diagram showing an assembly flow of the semiconductor device of the present embodiment. Details of each step will be described below with reference to FIGS.

1. Lead frame preparation process;
FIG. 12 is a plan view showing a lead frame prepared in the lead frame preparation step, and FIG. 13 is an enlarged plan view of a portion S in FIG.

  First, as a lead frame preparation step (S1) shown in FIG. 11, a lead frame 10 as shown in FIG. 12 is prepared. The lead frame 10 used in the present embodiment includes a plurality of product forming regions 10a inside a frame portion (frame body) 10b. In FIG. 12, four product formation regions 10a in the row direction (second direction X) and four product formation regions 10a in the column direction (first direction Y) are arranged in a matrix, and a total of 16 product formation regions 10a are provided. ing. As described above, the manufacturing efficiency can be improved by arranging the plurality of product formation regions 10a in a matrix. In particular, in the molding step (S4) shown in FIG. 11, a sealing body is formed in each of the plurality of product formation regions 10a. However, manufacturing efficiency is greatly improved by forming a plurality of sealing bodies in a lump. Can be made. The lead frame 10 is made of metal, and is made of, for example, copper (Cu) in the present embodiment. Specifically, a conductor film made of, for example, nickel (Ni) is formed on the surface of a base material made of copper (Cu). In addition, runner regions 10c are arranged along the row direction (second direction X) in each of the frame portions 10b. The runner region 10c is a region in which a runner portion serving as a path for supplying resin toward a cavity disposed in each product forming region 10a is disposed in a molding process described later.

  Further, as shown in FIG. 13 which is a partially enlarged view of FIG. 12, the die pad 2 is formed at the center of the product formation region 10a. The die pad 2 has a rectangular planar shape, and has two long sides 2a and 2b arranged along the first direction Y and two short sides 2c and 2d arranged along the second direction X. Yes. A plurality of suspension leads 9 are connected to the die pad 2. The plurality of suspension leads 9 provided in the lead frame 10 prepared in this step are formed with bent portions for offset placement of the positions of the die pads 2. A plurality of leads 4 are formed next to the die pad 2 along the long sides 2a and 2b. As described with reference to FIGS. 5 to 10, each of the plurality of leads 4 extends in the second direction X, and the tip positioned on the die pad 2 side with respect to the extending portion 4 a. It has the surface 4c and has the front-end | tip part 4b used as a bonding area. Although not shown, a conductor film made of, for example, silver (Ag) or gold (Au) is formed on the surface of the tip 4b (see FIGS. 5 to 8), which is a bonding region of the lead 4, for example. Has been.

  A dam portion (tie bar, frame portion) 11 is disposed around the die pad 2 so as to surround the die pad 2 and a part of the plurality of leads 4. The plurality of leads 4 are formed integrally with a tie bar 11a constituting a part of the dam portion 11, and are connected via the tie bar 11a. The dam portion 11 is a portion for blocking outflow of resin in a molding process described later, and a sealing region (region for forming the sealing body 6 shown in FIG. 1) is defined by the dam portion 11. Therefore, in the present embodiment, the dam portion 11 has a substantially rectangular planar shape. In other words, it has two long sides (sides inside the tie bar 11a) along the first direction Y and two short sides along the second direction X. In the lead frame 10 prepared in this step, the die pad 2, the plurality of leads 4, and the plurality of suspension leads 9 are respectively connected (connected) to the dam portion 11 and integrally formed. The dam portion 11 is formed integrally with the frame portion 10 b, and the die pad 2 and the plurality of leads 4 are supported by the frame portion 10 b via the dam portion 11.

2. Die bonding process;
14 is an enlarged plan view showing a state in which a semiconductor chip is mounted on the die pad shown in FIG. 13 via a bonding material, and FIG. 15 is an enlarged cross-sectional view taken along the line GG in FIG. Next, as a die bonding step (S2) shown in FIG. 11, as shown in FIGS. 14 and 15, the semiconductor chip CH is mounted on the chip mounting region of the die pad 2 via the die bonding material 7 (see FIG. 15). .

  In the present embodiment, as shown in FIG. 15, mounting is performed with the lower surface 3f of the semiconductor chip CH (the surface opposite to the upper surface 3e on which the plurality of pads PD are formed) facing the upper surface 2e of the die pad 2. It is mounted by a so-called face-up mounting method. Further, as shown in FIG. 14, each side of the semiconductor chip CH is fixed so as to be arranged along each side of the die pad 2. In the present embodiment, a plurality (two in FIGS. 14 and 15) of semiconductor chips CH1 and CH2 are mounted. Therefore, first, the sides 3a, 3b, 3c, and 3d of the semiconductor chip CH1 are mounted so as to extend along the long sides 2a and 2b and the short sides 2c and 2d of the die pad 2, respectively. Next, the semiconductor chip CH2 is mounted so that the sides 3a, 3b, 3c, and 3d of the semiconductor chip CH2 are aligned with the long sides 2a and 2b and the short sides 2c and 2d of the die pad 2, respectively. Note that the mounting order of the semiconductor chips CH1 and CH2 is not limited to the above. Further, for example, the semiconductor chip CH1 (see FIG. 14) is mounted on each of the plurality of product formation regions 10a shown in FIG. 12, and then the semiconductor chip CH1 (see FIG. 14) is mounted next to the semiconductor chip CH1. can do. That is, the semiconductor chip CH can be mounted after mounting all the semiconductor chips CH1 first. In the case where a plurality of different types of semiconductor chips CH are mounted in one product formation region 10a as in the present embodiment, it is possible to improve the manufacturing efficiency by mounting the semiconductor chips CH for each type. Can do.

  In the present embodiment, for example, the semiconductor chip CH is mounted via the die bond material 7 which is an epoxy thermosetting resin. The die bond material 7 has fluidity before being cured (thermoset). It is a paste material. When the paste material is used as the die bond material 7 in this way, first, the die bond material 7 is applied onto the die pad 2, and then the lower surface 3 f of the semiconductor chip CH is bonded to the upper surface 2 e of the die pad 2. Then, after the bonding, when the die bond material 7 is cured (for example, heat treatment is performed), the semiconductor chip CH is fixed on the die pad 2 via the die bond material 7 as shown in FIG. In the present embodiment, an embodiment in which a paste material made of a thermosetting resin is used as the die bond material 7 has been described, but various modifications can be applied. For example, instead of a paste material, an adhesive material that is a tape material (film material) having an adhesive layer on both sides is attached in advance to the lower surface 3f of the semiconductor chip CH, and the semiconductor chip CH is placed on the die pad 2 via the tape material. May be installed.

3. Wire bonding process;
16 is an enlarged plan view showing a state in which the semiconductor chip shown in FIG. 14 and a plurality of leads are electrically connected via wires, and FIG. 17 is an enlarged cross-sectional view taken along line HH in FIG. is there. Next, as a wire bonding step (S3) shown in FIG. 11, a plurality of pads PD and a plurality of leads 4 of the semiconductor chip CH are connected to a plurality of wires (conductive members) 5 as shown in FIGS. Are electrically connected to each other.

  In this step, for example, the heat stage 15 is prepared, and the lead frame 10 on which the semiconductor chip CH is mounted is disposed on the heat stage on the die pad 2 in each product formation region 10a. Then, the pad PD of the semiconductor chip CH and the lead 4 are electrically connected via the wire 5. Here, in the present embodiment, the wire 5 is connected through a so-called nail head bonding method in which the wire 5 is supplied through the capillary 16 and the wire 5 is joined using ultrasonic waves and thermocompression bonding. In this embodiment, after connecting a part of the wire to the pad PD of the semiconductor chip CH, the other part of the wire 5 is connected to the tip 4b (bonding region) of the lead 4 by a so-called positive bonding method. The wire is connected.

  Here, in the present embodiment, as described with reference to FIGS. 5 to 10, a part of the plurality of leads 4 joins the wire 5 to the overhang region 4 f (see FIG. 10) of the lead 4. To do. The other part of the plurality of leads 4 joins the wire 5 to the central region 4e of the lead 4 (see FIG. 9). At this time, since the tip 4b of the lead 4 is stably fixed, the upper surface of the wire 5 and the lead 4 can be reliably joined. Therefore, as shown in FIG. 17, the lower surface of the tip 4b of the lead 4 It is preferable to join the wire 5 in a state where the side is in contact with the lead support surface 15a of the heat stage. In particular, in the case of the lead 4 that joins the wire 5 to the overhanging region 4f, if the tip portion 4b of the lead 4 is inclined during wire bonding, it causes a bonding failure. Therefore, the lower surface side of the overhanging region 4f is connected to the lead support surface 15a. It is preferable to make it contact. In the present embodiment, as described above, since the position of the die pad 2 is offset with respect to the position of the lead 4, the heat stage 15 is also provided with a stepped portion, and the die pad support surface 15 b that supports the die pad 2 is the lead. The position is lower than the support surface 15a. Thereby, the lower surface side of the die pad 2 and the lead 4 can be stably held.

  Further, as shown in an enlarged view in FIG. 17, a conductor film CF1 made of, for example, silver (Ag) or gold (Au) is formed on the upper surface of the tip 4b (bonding region) of the lead 4. FIG. 17 shows an example in which the surface of the copper film BM as the base material is covered with the nickel film CF2 as the conductor film, and the conductor film CF1 is laminated on the upper surface of the nickel film CF2. A part of the wire 5 is joined to the conductor film CF1. The wire 5 is made of metal, and in this embodiment, is made of, for example, gold (Au). Therefore, the bonding strength between the wire 5 and the lead 4 can be improved by forming the conductor film CF1 in the bonding region of the wire 5. In particular, in the case of the lead 4 that joins the wire 5 to the overhanging region 4f, the joining failure can be suppressed by improving the joining strength between the wire 5 and the lead 4.

4). Molding process;
18 is a plan view showing a state in which a sealing body is formed in the product formation region of the lead frame shown in FIG. 19 is an enlarged plan view of the S portion in FIG. 18, and FIG. 20 is an enlarged sectional view taken along line JJ in FIG. 19, showing a state in which resin is supplied into the molding die in the molding process. is there. FIG. 21 is an enlarged cross-sectional view taken along the line KK in FIG. 19, showing a state in which the resin is supplied into the molding die in the molding process. Next, as a molding step (S4) shown in FIG. 11, as shown in FIG. 18, a sealing body (sealing body) 6 is formed in each of the plurality of product formation regions 10a, and each of the molding steps (S4) shown in FIG. A part (inner lead portion) of each of the semiconductor chip CH, the plurality of wires 5, the die pad 2, and the plurality of leads 4 in the product formation region 10a is sealed.

  In the present embodiment, an upper mold (upper mold) having a cavity formed on the inner surface and an upper mold having a lower mold (lower mold) having a cavity formed at a position opposite to the upper mold cavity. With the lead frame 10 shown in FIGS. 16 and 17 fixed between the mold and the lower mold, a softened (plasticized) thermosetting resin (resin) is pressed into the cavity and molded. A so-called transfer mold method in which heat curing is performed is used. In the transfer mold method, resin is supplied from the supply unit (gate unit) into the cavity, and residual gas and excess resin in the cavity are discharged from the discharge unit (vent unit). If classified according to the position of the supply unit with respect to the cavity, it can be broadly divided into a top gate type in which the supply unit is arranged above the cavity and a side gate type in which the supply unit is arranged on the side of the cavity. In the present embodiment, a side gate method that is advantageous from the viewpoint of miniaturization of the molding die or the ease of maintenance of the molding die is applied.

  Hereinafter, the molding process of the present embodiment will be described in detail. First, as a molding die preparation step, a molding die 20 shown in FIGS. 20 and 21 is prepared.

  The molding die 20 includes an upper die (upper die) 21 and a lower die (lower die) 22. The upper mold 21 has a mold surface (clamp surface, inner surface) 21a (see FIG. 21) and a cavity (concave portion) 23 formed on the mold surface 21a side. The cavity 23 has a quadrilateral shape (specifically, a quadrangular shape whose corners are chamfered), and intersects (orthogonally) each of the long sides 23a and 23b (see FIG. 21) and the long sides 23a and 23b facing each other. Short sides 23c and 23d (see FIG. 20) that face each other are provided. The lower mold 22 has a mold surface (clamp surface, inner surface) 22a (see FIG. 21) and a cavity (concave portion) 24 formed on the mold surface 22a side. The cavity 23 of the upper mold 21 and the cavity 24 of the lower mold 22 are arranged at positions facing each other, and the mold surface 21a of the upper mold 21 and the mold surface 22a of the lower mold 22 are overlapped to face each other, whereby the cavity 23 , 24 is formed in the molding die 20. Further, on the mold surface 21a side of the upper die 21, a gate portion (supply portion) 25 for supplying resin into the hollow space, and a vent portion (for discharging internal gas and excess resin in the hollow space) A discharge part) 26 is formed. The gate portion 25 and the vent portion 26 are disposed on the side surface side of the cavity 23 and are connected to the side surface of the cavity 23. 20 shows an example in which the gate portion 25 and the vent portion 26 are formed only on the upper die 21, but, for example, on the mold surface 22a of the lower die 22, each of the gate portion 25 and the vent portion 26 A gate part and a vent part can also be formed at opposing positions.

  In the present embodiment, a plurality of leads are arranged on the long sides 23a and 23b side of the cavity 23 shown in FIG. 19, so that the gate portion 25 and the vent portion 26 are on the short sides 23c and 23d side. It is arranged. In FIG. 19, in order to show the planar position of each component of the molding die 20 (see FIGS. 20 and 21), the molding die is formed on a resin (sealing resin that becomes a sealing body by curing) 6 p. A description will be given with reference to the reference numerals of the components of the mold 20. As shown in FIG. 19, the long sides 23 a and 23 b and the short sides 23 c and 23 d of the cavity 23 correspond to the long sides 6 a and 6 b and the short sides 6 c and 6 d of the sealing body 6, respectively. The position of the gate part 25 and the vent part 26 will be described in detail with reference to FIG. 19. The gate part 25 is connected to the short side 23c side of the cavity 23, and the vent part 26 is connected to the short side 23d side. Further, the gate portion 25 is disposed closer to the longer side 23a than the center of the short side 23c, and the vent portion 26 is disposed closer to the longer side 23b than the center of the short side 23d. As described above, the gate portion 25 and the vent portion 26 are arranged so as to be shifted from the centers of the short sides 23c and 23d toward the long sides 23a and 23b facing each other, thereby forming a hollow space formed by the cavities 23 and 24 shown in FIG. It becomes easy to supply the resin 6p to the corners.

  Moreover, in this Embodiment, as shown in FIG. 18, the several sealing body 6 is formed collectively in each of several product formation area | region 10a. For this reason, a plurality of cavities 23 and 24 are formed in the molding die 20 shown in FIGS. 20 and 21 corresponding to the plurality of product forming regions 10a shown in FIG. When a plurality of sealing bodies 6 are collectively formed in each of the plurality of product forming regions 10a as in the present embodiment, the manufacturing efficiency can be improved. In particular, as shown in FIG. 18, when the number of rows of product formation regions 10a (the number of product formation regions 10a arranged along the first direction Y) is increased, the molding die 20 (see FIG. 21) increases in size. It is preferable at the point which can suppress. From the viewpoint of increasing the number of rows of the product formation regions 10a and suppressing an increase in the size of the molding die, it is possible to connect the vent portions 26 and the gate portions 25 of the adjacent product formation regions 10a as shown in FIG. preferable. In the present embodiment, the product formation regions 10a are arranged in a plurality of rows (four rows) along the first direction Y that is the supply direction of the resin 6p. And the vent part 26 of the product formation area 10a of the 1st row and the gate part 25 of the product formation area 10a of the 2nd row are connected via the cavity 27 which is a flow path between product formation areas. Similarly, the second row and third row vent portions 26 are connected to the third row and fourth row gate portions 25 through cavities 27, respectively. Moreover, the gate part 25 of the 1st row is connected with the runner part 28 connected with the heating chamber (pot part) which is not shown in figure. Further, the vent portion 26 in the fourth row is connected to the flow cavity 29. Accordingly, the resin 6p can be sequentially supplied from the first row to the fourth row to each product formation region 10a arranged in a plurality of rows.

  Next, as shown in FIGS. 20 and 21, as a clamping process, the lead frame 10 is disposed between the upper die 21 and the lower die 22, and the clamping region of the lead frame 10 (the die surface 21 a of the molding die 20). , 22a and the region facing the surface 22a) is clamped by the molding die 20. In this step, first, the lead frame 10 is disposed between the upper die 21 and the lower die 22. Specifically, the die pad 2 on which the semiconductor chip CH is mounted, the plurality of wires 5, and a part of each of the plurality of leads 4 (a plurality of inner leads 4 a) are disposed in the cavities 23 and 24. Further, the long sides 2a and 2b of the die pad 2 shown in FIG. 14 (side 3a of the semiconductor chip CH shown in FIG. 16) are arranged on the long sides 23a and 23b (long sides 6a and 6b of the sealing body 6) shown in FIG. 3b) along the short sides 2c and 23d of the cavity 23 shown in FIG. 19 (short sides 6c and 6d of the sealing body 6) so that the short sides 2c and 2d of the die pad 2 shown in FIG. To place. Next, as shown in FIGS. 20 and 21, the lead frame 10 is clamped by the upper die 21 and the lower die 22. The mold surface 21 a disposed around the cavity 23 of the upper die 21 abuts on the clamp area on the upper surface of the lead frame 10 and presses the lead frame 10 toward the lower die 22. On the other hand, between the lower mold 22 and the lead frame 10, a mold surface 22 a disposed around the cavity 24 of the lower mold 22 abuts on a clamp region on the lower surface of the lead frame 10, so that the lead frame 10 is placed in the upper mold. Press toward 21. In the clamping step, the lead frame 10 is fixed in the molding die 20 by sandwiching the lead frame 10 with the distance between the die surfaces 21a and 22a close, but the method of moving the upper die 21, the lower die 22 is A method of moving, or a method of moving both the upper mold 21 and the lower mold 22 can be applied.

  Next, as a sealing body forming step, resin 6p is supplied (press-fitted) into the cavities 23 and 24 with the lead frame 10 clamped by the molding die 20 as shown in FIG. The sealing body 6 is formed. In this step, first, a runner portion that leads to a gate portion 25 formed in the upper die 21 is made by softening (plasticizing) resin pellets (not shown) made of a thermosetting resin in a heating chamber (pot portion) (not shown). The resin 6p is supplied to the cavities 23 and 24 via 28 (see FIG. 18). The heating chamber and the runner portion 28 are each formed in the molding die 20. As shown in FIG. 18 with an arrow, the resin 6p is formed in the first row, the second row, the third row, and the fourth row from the runner portion 28 in the order of the cavities 23 of the product formation regions 10a. 24 (see FIG. 20).

<Relationship between resin flow direction and wire flow failure>
Hereinafter, the flow direction of the resin in the product formation region 10a will be described using an enlarged plan view of the product formation region 10a in the fourth row as an example. 22 to 26 are enlarged plan views showing stepwise the flow direction when the resin shown in FIG. 19 is supplied. 22 to 26, the flow direction of the resin 6p in the product formation region 10a is indicated by an arrow.

  First, immediately after the supply of the resin 6p is started, the resin 6p spreads isotropically from the gate portion 25 along the cavity 23 as shown in FIG. At this time, the resin 6p is also embedded in the region surrounded by the mold surfaces 21a and 22a (see FIG. 21) of the molding die 20 (see FIG. 21) and the dam portion 11 outside the cavity 23. . However, as shown in FIGS. 23 and 24, when the resin 6p reaches the region where the semiconductor chip CH is disposed, the flow of the resin 6p is obstructed by the semiconductor chip CH and is difficult to flow. On the other hand, in the region where the lead 4 is disposed and the region between the lead 4 and the semiconductor chip CH, the flow of the resin 6p is difficult to be inhibited. Therefore, as shown in FIGS. 23 and 24, the resin 6p easily flows in the region between the long sides 23a and 23b of the cavity 23 and the sides 3a and 3b (see FIG. 16) of the semiconductor chip CH. The resin 6p flows along the first direction Y. When the gate portion 25 is arranged closer to the long side 6b side than the center of the short side 23c as in the present embodiment, the long side 6b closer to the gate portion 25 as shown in FIG. The side is sealed first, and then the long side 6a side closer to the vent portion 26 is sealed. Next, as shown in FIG. 26, the inner lead portion of the lead 4 disposed at the closest position of the vent portion 26 is sealed, and then excess resin 6p is discharged to the vent portion 26 together with the residual gas. Thereby, the sealing body 6 shown in FIG. 19 is shape | molded.

  Here, as described above, in the molding process using the transfer mold method, depending on the angle formed by the flow direction of the resin 6p and the extending direction of the wire 5, the wire 5 is deformed by the pressure received from the resin 6p (wire flow failure). ) May occur. This wire flow failure is most likely to occur when the angle between the flow direction of the resin 6p and the extending direction of the wire 5 is 90 degrees, and the angle formed between the flow direction of the resin 6p and the extending direction of the wire 5 is Most unlikely to occur at 0 degrees. Hereinafter, a region where a wire flow failure is likely to occur will be described.

  First, as shown in FIG. 22 to FIG. 24, when the resin 6p divides the long sides 23a and 23b of the cavity 23 into three equal parts, it reaches the region (region 10a1 shown in FIG. 2) arranged closest to the short side 23d. In the area up to this point (area 10a2 shown in FIG. 2), almost no wire flow failure occurs. In this region 10a2, even if the angle formed by the flow direction of the resin 6p and the wire 5 (see FIG. 16) is 90 degrees, almost no defective wire flow occurs. This is because the volume of the unfilled area (area not filled with the resin 6p) in the cavity 23 is sufficiently large at the stage shown in FIGS. 22 to 24, and therefore the supply pressure of the resin 6p causes the wire 5 to deform. It is thought that it is not so expensive. However, according to the inventor's investigation, in the region 10a1 (see FIG. 2) that is closest to the vent portion 26 when the resin 6p divides the long side 23a of the cavity 23 into three equal parts, the frequency of occurrence of defective wire flow increases. To do. In particular, in the peripheral region of the vent portion 26 (for example, the unfilled region shown in FIG. 25), the wire 5 may be greatly deformed in the traveling direction of the resin 6p. Note that the peripheral region of the vent portion 26 where the degree of deformation of the wire 5 is particularly large due to poor wire flow is, according to the study of the inventors of the present application, from the lead 4 closest to the vent portion 26 toward the gate portion 25. This is a narrow region in which about 3 to 4 leads 4 are arranged. The reason why the wire flow failure occurs on the side of the vent portion 26 as described above is that the internal pressure in the cavity 23 increases as the volume of the unfilled region decreases, and the supply pressure of the resin 6p increases correspondingly. It is thought to be because. Further, in the present embodiment, as shown in FIG. 18, the product formation regions 10a are arranged in a plurality of rows along the first direction Y that is the direction of supplying the resin 6p, and the first row to the end row (in this embodiment) Resin 6p is sequentially supplied toward the product formation region 10a in the fourth row). In this case, the wire 5 is particularly likely to be greatly deformed around the vent portion 26 (that is, the unfilled region shown in FIG. 25) in the product formation region 10a in the terminal row in the supply direction of the resin 6p. As described above, the vent portion 26 and the gate portion 25 of the adjacent product forming region 10a are connected (communicated) from the product forming region 10a in the first row to the product forming region 10a in the end row. For this reason, in the periphery of the vent part 26 from the first row to the third row, an increase in the internal pressure in the cavity 23 can be suppressed by flowing the internal gas toward the product formation region 10a on the end row side. This is probably because of this.

  In the present embodiment, in the region where the deformation of the wire 5 is likely to occur, the wire 5 is joined to the overhanging region 4f of the tip portion 4b of the lead 4 as described with reference to FIG. For example, among the plurality of leads 4 shown in FIGS. 25 and 26, the lead P2 that is disposed at the closest position of the vent portion 26 with the tip surface 4c (see FIG. 10) along the first direction Y is The wire 5 is joined to the overhanging region 4f (see FIG. 10) of the tip 4b (see FIG. 10) of the lead 4. Further, the lead P3 arranged next to the lead P2 on the gate portion 25 side also joins the wire 5 to the overhanging region 4f of the tip portion 4b of the lead 4. Further, the lead P4 arranged next to the lead P3 on the gate portion 25 side also joins the wire 5 to the overhanging region 4f of the tip portion 4b of the lead 4. As a result, the angle formed between the extending direction of the wire 5 connected to the leads P2, P3, and P4 and the flow direction (first direction Y) of the resin 6p is closer to 0 degrees than when joined to the central region 4e. It becomes. As a result, wire flow failure can be suppressed. For this reason, it can suppress that the wire 5 connected to lead P2, P3, P4 deform | transforms and contacts with the wire 5 arrange | positioned rather than each wire 5 at the vent part 26 side, and it becomes a short circuit defect. Moreover, it can suppress that the wire 5 connected to the lead P2, P3, and P4 becomes a bonding failure due to deformation.

  On the other hand, among the plurality of leads 4 positioned around the vent portion 26 shown in FIG. 25, the lead P1 whose front end surface 4c (see FIG. 7) faces the side 3d (side along the second direction X) of the semiconductor chip CH. As shown in FIG. 7, the overhang region 4f as shown in FIG. 10 is not formed and is joined to the central region 4e of the tip 4b. As shown in FIG. 25, the resin 6p is supplied to the wire 5 joined to the lead P1 mainly from the upper surface side of the semiconductor chip CH. The wire 5 connected to the lead P1 is connected to the pad PD arranged along the side 3d of the semiconductor chip CH. Therefore, even if the wire 5 is joined to the center of the tip portion 4b, the angle formed by the extending direction of the wire 5 joined to the lead P1 and the flow direction of the resin 6p is close to 0 degrees. Therefore, in the present embodiment, the wire 5 to be joined to the lead P1 is joined to the central region 4e of the tip portion 4b of the lead P1. Thus, even for the lead 4 arranged on the vent portion 26 side with respect to the lead P2, the lead P1 in which the angle formed by the extending direction of the wire 5 and the flow direction of the resin 6p is close to 0 degrees structurally. By connecting the wire 5 to the center of the tip portion 4b, the connection reliability at the time of the wire bonding process can be improved.

<Preferred embodiment>
Next, a preferred embodiment of the present embodiment will be described from the viewpoint of suppressing the above-described wire flow failure or suppressing the decrease in connection reliability of the wire 5. FIG. 27 is an enlarged plan view showing the relationship between the region where wire flow failure is likely to occur and the bonding position to the lead. FIG. 27 corresponds to the enlarged plane area shown in FIG.

  First, as described above, when the long sides 6a and 6b (the long sides 23a and 23b of the cavity 23) shown in FIG. In the area 10a1) shown in FIG. Therefore, from the viewpoint of suppressing the wire flow failure almost surely, as shown in FIG. 27, each of the lead P2 to lead P7 and the lead P26 to lead P31, which are the leads 4 in which the tip portion 4b is disposed in the region 10a1, The wire 5 is joined to the overhang region 4f (see FIG. 7). However, like the lead P1 and the lead P25, the tip surface 4c is disposed so as to face the side 3d of the semiconductor chip CH, and the lead 4 connected to the pad PD disposed along the side 3d is as described above. Due to the structure, it is difficult for wire flow defects to occur. For this reason, the lead P1 and the lead P2 are the leads 4 in which the distal end portion 4b is disposed in the region 10a1 shown in FIG. 27, but as shown in FIGS. 10), the wire 5 is joined to the central region 4e (FIGS. 9 and 10). In the lead P1 to the lead P7 and the lead P25 to the lead P31, a current unique to each lead 4 such as a signal current flows, but by suppressing the wire flow failure of the wires 5 joined to these leads 4, Short circuit failure between adjacent wires 5 can be suppressed. Further, there are cases where a plurality of wires 5 are joined to one lead 4 like the lead P8 and the lead P32 shown in FIG. The lead P8 and the lead P32 are, for example, the lead 4 through which a power supply potential current, a reference potential current, and the like flow. Therefore, a plurality of wires 5 are connected. Thus, when the several wire 5 is joined to the one lead 4, each of the wire 5 can be joined to the center area | region 4e. When a plurality of wires 5 are joined to one lead 4, the arrangement density of the wires 5 is increased, so that wire flow defects are less likely to occur. Further, even if the wires 5 bonded to one lead 4 are in contact with each other, a short circuit failure does not occur.

  On the other hand, in the region where the wire flow failure hardly occurs, that is, in the region 10a2 shown in FIG. 27, as shown in FIG. 9, even if the overhang region 4f (see FIG. 9) is not formed or the overhang region 4f is formed. The wire 5 is joined to the central region 4e. In the region 10a2, the wire flow failure hardly occurs regardless of the angle formed by the extending direction of the wire 5 and the flow direction of the resin 6p (see FIG. 19). Therefore, it is preferable that the wire 5 in which the distal end portion 4b is disposed in the region 10a2 is connected to the central region 4e from the viewpoint of suppressing a decrease in connection reliability of the wire 5 in the wire bonding process.

  By the way, the lead 4 in which the distal end portion 4b is disposed in the region 10a2 joins the wire 5 to the central region 4e, so that the overhang region 4f shown in FIG. 9 may not be provided. However, even when the wire 5 is bonded to the central region 4e as shown in FIG. 9, the following effects can be obtained by providing the overhang region 4f. That is, in the completed SOP 1 as shown in FIG. 2, since the plurality of leads 4 are separated from each other, when the adhesive strength between the leads 4 and the sealing body 6 decreases, the lead leads toward the long side 6 a or the long side 6 b. There is a concern that a defect (missing defect) in which 4 is lost occurs. If the overhanging region 4f is formed as shown in FIG. 9, the overhanging region 4f functions as an anchor that suppresses omission defects. Therefore, it is preferable to form the overhanging region 4f for the lead 4 arranged in the region 10a2 shown in FIG. Note that the lead P1, the lead P20 to the lead P25, and the lead P44 to the lead P48 shown in FIG. 27 do not form the overhang region 4f shown in FIG. 9 or FIG. However, each of these leads 4 has an inclined portion inclined with respect to the first direction Y and the second direction X in the sealing body 6 (see FIG. 2). Further, as shown in FIGS. 5 to 8, the leads 4 are disposed so that the front end face 4c faces the side 3c or the side 3d of the semiconductor chip CH, so that the lead 4 faces the side 3c or the side 3d of the semiconductor chip CH. Therefore, the length of the inclined portion is longer than that of the other leads 4. The lead 4 having such a long sloping portion does not form the overhanging region 4f because the sloping portion functions as an anchor that suppresses a drop defect.

  As shown in FIG. 18, in the present embodiment, the sealing bodies 6 are formed in the plurality of product formation regions 10a, respectively. In this case, it is particularly preferable to apply the embodiment shown in FIG. 27 to each of the plurality of product formation regions 10a.

  Further, like the lead P4 shown in FIG. 7 and the lead P29 shown in FIG. 8, both the gate region 25 (see FIG. 19) side from the central region 4e and the vent portion 26 (see FIG. 19) side from the central region 4e. In the case where the overhanging region 4f is formed, it is preferable to join the wire 5 to the overhanging region 4f on the vent portion 26 side. In particular, in the peripheral region of the vent portion 26a, the wire 5 is joined to the overhanging region 4f on the vent portion 26 side so that the angle formed between the extending direction of the wire 5 and the flow direction of the resin 6p (see FIG. 25) is 0 degree. It is because it can approach. Further, when the overhanging region 4f having a larger area than the other is formed next to one of the central regions 4e like the leads P2 and P3 shown in FIG. 7 and the leads P27 and P28 shown in FIG. The overhanging region 4f on the vent portion 26 side is preferably widened. This is because, when the wire 5 is bonded to the overhanging region 4f, the connection reliability during wire bonding is improved by increasing the area of the overhanging region 4f.

  As described above, the aspect described with reference to FIG. 27 is particularly preferable from the viewpoint of suppressing the wire flow failure or suppressing the decrease in the connection reliability of the wire 5, but various modifications may be applied. Can do. Below, the typical modification of the embodiment shown in FIG. 27 is demonstrated.

<Modification>
As described above, the frequency of occurrence of poor wire flow increases in the region 10a1 shown in FIG. 27, but the degree of deformation of the wire 5 increases as it approaches the vent portion 26 shown in FIG. In other words, the region where the degree of deformation of the wire 5 is particularly large is, for example, an unfilled region shown in FIG. 25, that is, about three to four leads from the lead 4 closest to the vent portion 26 toward the gate portion 25. 4 is a narrow region in which 4 is arranged. Further, as shown in FIG. 18, the product formation regions 10a are arranged in a plurality of rows along the first direction Y that is the supply direction of the resin 6p, and from the first row to the end row (the fourth row in the present embodiment). Resin 6p is sequentially supplied toward the product formation region 10a. In this case, the wire 5 is particularly likely to be greatly deformed around the vent portion 26 (the unfilled region shown in FIG. 25) of the product forming region 10a in the terminal row in the supply direction of the resin 6p.

  Therefore, in the case where countermeasures against poor wire flow are taken only in an area where the degree of deformation of the wire 5 is particularly large, the modification examples shown in FIGS. 28 to 31 can be considered. FIG. 28 is a modified example of FIG. 27, and is an enlarged plan view showing a fourth row of product formation regions among the plurality of product formation regions shown in FIG. 29 is a modified example corresponding to FIG. 7 and is an enlarged plan view corresponding to the periphery of the vent shown in FIG. 28. FIG. 30 is a modified example corresponding to FIG. 8 and corresponds to the periphery of the vent shown in FIG. It is an enlarged plan view. FIG. 31 is a modified example of FIG. 27 and is an enlarged plan view showing each product formation region from the first row to the third row among the plurality of product formation regions shown in FIG.

  In the modification shown in FIGS. 28 to 31, among the product formation regions 10 a arranged in a plurality of rows along the first direction Y, the product formation region 10 a in the fourth row, which is the end row, particularly the wire 5. Wire flow countermeasures are taken in areas where deformation becomes large. In FIG. 28, among the plurality of leads 4, the plurality of leads 4 have the front end surface 4 c (see FIG. 29) along the first direction Y and have the front end surface 4 c along the first direction Y. In addition, wire flow countermeasures are taken for the lead P2 disposed at the position where the distal end portion 4c is closest to the vent portion 26 and the lead P3 disposed adjacent to the gate portion 25 side of the lead P2. That is, as shown in FIG. 29, the wires 5 are joined to the overhanging region 4f of the tip 4b of the leads P2 and P3. On the other hand, for the other leads 4 (lead P1 and lead P4 to lead P48), for example, as shown in FIGS. 29 and 30, the wire 5 is joined to the central region 4e of the tip portion 4b. Further, as shown in FIG. 31, each of the product formation regions 10a from the first row to the third row has a lead 4 for joining the wire 5 to the overhanging region 4f as shown in FIG. Not. In other words, in the modification examples shown in FIGS. 28 to 31, wire flow countermeasures are taken only for the leads P <b> 2 and P <b> 3 having the greatest degree of deformation of the wire 5 due to defective wire flow. In this way, the connection reliability in the wire bonding process can be improved by minimizing the wire 5 to be bonded to the overhanging region 4f.

  By the way, as a minimum configuration capable of obtaining an effect of suppressing a short circuit failure due to a wire flow failure, it is possible to adopt a configuration in which only the lead P2 shown in FIG. 29 is joined to the overhang region 4f. Further, when the lead P2 is the lead 4 closest to the vent portion 26 (that is, when the lead P1 shown in FIG. 29 does not exist), no short circuit failure occurs even if the wire 5 connected to the lead P2 is deformed. In this case, the configuration in which only the lead P3 shown in FIG. 29 is joined to the overhanging region 4f is the minimum configuration that can achieve the effect of suppressing short-circuit defects. However, when the deformation amount of the wire 5 due to the wire flow is large, the connection reliability at the bonding portion between the wire 5 and the pad PD or between the wire 5 and the lead 4 is lowered. From the viewpoint of suppressing this decrease in connection reliability, it is preferable to join each of the lead P2 and the lead P3 to the overhang region 4f even when the lead P2 is the lead 4 closest to the vent portion 26. Further, according to the study by the present inventor, the degree of deformation of the wire 5 is reduced in the region where about three to four leads 4 are arranged from the lead 4 closest to the vent portion 26 toward the gate portion 25. Especially big. For this reason, it is preferable to join the wire 5 to the overhanging region 4f for the lead P3 shown in FIG.

  In the modification shown in FIGS. 28 to 31, in the lead frame 10 shown in FIG. 18, the wire bonding position of the SOP1, which is the final product, differs depending on the position of the product formation region 10a. Therefore, from the viewpoint of obtaining a final product wire-bonded at the same position in each product formation region 10a, the fourth column is also applied to the product formation regions 10a from the first column to the third column shown in FIG. It is preferable to take measures against wire flow on the same lead 4 as the product formation region 10a of the eye.

  Further, in the product formation region 10a from the first row to the third row shown in FIG. 18, the degree of deformation of the wire 5 (see FIG. 27) due to the wire flow is higher than that in the product formation region 10a in the fourth row. Although it is small, the wire 5 is also deformed in the product formation region 10a from the first row to the third row. Therefore, it is preferable to take measures against wire flow in each of the product formation regions 10a from the first row to the fourth row. However, as shown in FIG. 18, in the present embodiment, the gate portion 25 and the vent portion 26 are arranged close to different long sides. In addition, in order to shorten the connection distance between the vent portion 26 and the gate portion 25 between the product formation regions 10a of each row, the gate portion 25 and the vent portion 26 are arranged alternately on different long sides for each row. In other words, the adjacent vent part 26 and the gate part 25 are disposed so as to face each other along the first direction Y. Specifically, the vent portions 26 of the product formation regions 10a in the first row and the third row are arranged close to the long side 6b (see FIG. 19), and the product formation in the second row and the fourth row is performed. The vent portion 26 in the region 10a is arranged close to the long side 6a (see FIG. 19). Therefore, in the product formation region 10a in the first row and the third row, the lead 4 arranged on the long side 6b side is closer to the vent portion 26 than the lead 4 arranged on the long side 6a side. Become. For this reason, as shown in FIG. 32, in the product formation region 10a in the first row and the third row, a measure against wire flow is applied to the lead P26 and the lead P27 (as shown in FIG. It is preferable to join the wire 5). FIG. 32 is a modified example of FIG. 27 and is an enlarged plan view showing the product formation region in the first row or the third row among the plurality of product formation regions shown in FIG. Further, in this case, from the viewpoint of obtaining a final product wire-bonded at the same position in each product formation region 10a, it is preferable to take measures against the wire flow for the lead P2 and the lead P3. In other words, when the gate portion 25 and the vent portion 26 are arranged close to different long sides alternately for each column, the lead 4 close to the vent portion 26 is either one of the leads P2 and P3 or the leads P26 and P27. Even in this case, it is preferable to join the wire 5 to the overhanging region 4f as shown in FIG. 10 for the lead 4 facing the lead 4 close to the vent portion 26 along the second direction X.

  18 to 32, the gate portion 25 and the vent portion 26 are arranged at positions closer to the long side 23a or the long side 23b than the center of the short sides 23c and 23d of the cavity 23 as shown in FIG. Although the embodiment has been described, the present invention can also be applied to an embodiment in which the gate portion 25 and the vent portion 26 are arranged at the center of the short sides 23c and 23d of the cavity 23 as shown in FIG. FIG. 33 is an enlarged plan view showing a resin flow direction, which is a modification to FIG. In the modification shown in FIG. 33, the stepwise flow of the resin 6p as shown in FIGS. 22 to 26 is not shown, but as shown by the arrow in FIG. It flows mainly along the first direction Y from the portion 25 toward the vent portion 26. Therefore, for example, by applying the configuration described with reference to FIG. 27 or the configuration described with reference to FIG. 32, wire flow defects can be suppressed.

  FIG. 10 shows an example of the shape of the tip of the lead 4 having the overhanging region 4f, but it can be applied to, for example, the modification shown in FIG. FIG. 34 is a modified example of FIG. 10 and is an enlarged plan view of the periphery of the tip of the lead having a tip surface facing the long side of the die pad among a plurality of leads. The lead 4 shown in FIG. 34 has a recess 4g in which a part of the tip 4b is recessed in the direction along the first direction Y at the boundary line between the extending portion 4a and the tip 4b. When a large area of the overhang region 4f is ensured, the distance from the tip portion 4b disposed adjacent to the overhang region 4f approaches. In this case, by providing the recess 4g as shown in FIG. 34, it is possible to avoid contact between the adjacent tip portions 4b. In the case of the lead 4 having the structure shown in FIG. 34, since the center of the boundary line between the tip portion 4b and the extending portion 4a is different, the center region 4e and the overhang region 4f are defined as follows. That is, the lead 4 shown in FIG. 34 is centered on a line (virtual line) CL connecting the center of the boundary line on the extending portion 4a side of the distal end portion 4b and the center of the end side on the distal end surface 4c side of the distal end portion 4b. As a central region 4e having the same width as the extending portion 4a, and a projecting region projecting along the first direction Y from the central region 4e. The end side on the distal end surface 4c side of the distal end portion 4b is a side (front end side) that intersects the upper surface that is the wire bonding surface of the distal end portion 4b among the sides provided on the distal end surface 4c constituting the side surface of the lead 4. is there. As shown in FIG. 34, this end side is arranged on the semiconductor chip CH side (die pad 2 side) with respect to the boundary line between the extending part 4a and the tip part 4b so as to face the boundary line. This definition can also be applied to the lead 4 shown in FIG. In the case of the lead 4 shown in FIG. 34, the recess 4g is preferably provided on the gate portion 25 (see FIG. 27) side, and the overhang region 4f for connecting the wire 5 is preferably provided on the vent portion 26 (see FIG. 27). Thereby, the angle formed by the extending direction of the wire 5 and the flow direction of the resin 6p (see FIG. 19) can be brought close to 0 degrees.

  19 to 21, the semiconductor chip CH, the plurality of wires 5, the die pad 2, and a part of each of the plurality of leads 4 (inner lead portions) in the product formation region 10a are sealed with the resin 6p. Stopped. And the sealing body 6 is formed in each product formation area | region 10a of the lead frame 10, as shown in FIG. In this step, the resin 6p is also filled into the cavity 27 (see FIG. 19) and the flow cavity 29 (see FIG. 19), and is cured together with the resin 6p in the cavities 23 and 24 (see FIG. 20). Thereby, a resin body is also formed in the cavity 27 and the flow cavity 29.

  The process of curing the resin 6p to form the sealing body 6 will be briefly described. First, the molding die 20 is heated to a temperature equal to or higher than the curing temperature of the resin 6p, and the resin 6p is thermally cured (temporarily cured). Thereafter, the lead frame 10 is taken out from the molding die 20 and further heated in a heating furnace to be completely cured (main curing). In order to completely cure the resin 6p, a heating time of about several hours is required. Thus, by performing the heat curing in two stages, the processing efficiency by one molding die 20 is improved. Can do.

5. Plating Step Next, as a plating step (S5) shown in FIG. 11, an exterior conductor film made of, for example, solder is formed on the exposed portions (outer lead portions) of the leads 4 exposed from the sealing body 6 shown in FIG. . In this step, the lead frame 10 which is a workpiece to be plated is placed in a plating tank (not shown) containing a plating solution (not shown) and, for example, an exterior conductor film (not shown) is formed by electrolytic plating. (Omitted). According to this electrolytic plating method, the exterior conductor film can be collectively formed in the region exposed from the sealing body 6. The exterior conductor film of the present embodiment is made of so-called lead-free solder that does not substantially contain Pb (lead). For example, only Sn (tin), Sn (tin) -Bi (bismuth), or Sn (tin) -Ag (silver) -Cu (Cu). Here, the lead-free solder means a lead (Pb) content of 0.1 wt% or less, and this content is defined as a standard of the RoHs (Restriction of Hazardous Substances) directive.

For this reason, the plating solution used in this plating step contains a metal salt such as Sn ²⁺ or Bi ³⁺ . In this embodiment, Sn—Bi alloyed metal plating is used as an example of lead-free solder plating, but Bi can be replaced with a metal such as Cu or Ag.

6). Marking Step Next, as a marking step (S6) shown in FIG. 11, an identification symbol for identifying the product (SOP1) is marked. In the present embodiment, for example, the identification symbol is marked by irradiating the upper surface of each sealing body 6 shown in FIG. 18 with a laser.

7). Next, as a lead molding step (S7) shown in FIG. 11, the plurality of leads 4 connected by the tie bars 11a are divided as shown in FIG. 19, and the leads 4 are sealed as shown in FIG. The exposed part from the body 6 is formed into a gull wing shape. As a method of dividing the plurality of leads 4, for example, the leads 4 can be divided by press working using a punch (cutting blade) and a die (support member). In FIG. 19, resin (in-dam resin) is embedded in the gap between the tie bar 11a and the long sides 23a, 23b of the cavity 23. For example, when cutting the tie bar 11a in this step, Resin can also be removed. Moreover, the method of shape | molding the outer lead part of the lead | read | reed 4 can be shape | molded using a bending punch (pressing tool for bending processes) and die | dye (support member), for example. In addition, from the viewpoint of improving the bending accuracy of the lead 4, it is preferable to cut the tip of the outer lead portion in advance before bending the lead 4.

8). Next, as the individualization step (S8) shown in FIG. 11, the plurality of suspension leads 9 connected to the dam portion 11 are cut as shown in FIG. 19, and divided into product formation regions 10a. Thus, a plurality of SOP1s (see FIG. 1) are acquired. For example, as shown in FIG. 18, 16 separated assemblies (semiconductor devices before performing the inspection process) can be obtained from the lead frame 10 including 16 product formation regions 10a. As a method of cutting the plurality of leads 4 and the plurality of suspension leads 9, for example, a punch (cutting blade) 52 is disposed on the upper surface side of the lead frame 10, and a die (support member; not shown) is disposed on the lower surface side. Cut by placing and pressing.

  Through the above steps, the assembly process of the SOP 1 shown in FIG. 1 is completed. Thereafter, necessary inspections and tests such as an appearance inspection and an electrical test are performed and shipped or mounted on a mounting board (not shown).

<Other variations>
As mentioned above, the invention made by the present inventor has been specifically described based on the embodiment. However, the present invention is not limited to the embodiment, and various modifications can be made without departing from the scope of the invention. Needless to say.

  For example, the technique described in the above embodiment can be applied to the structure shown in FIG. FIG. 35 is an enlarged plan view showing a modification to FIG. Differences between the structure shown in FIG. 35 and the structure shown in FIG. 27 will be described below.

  First, the first difference is that, in the structure shown in FIG. 35, one semiconductor chip CH is mounted in one product formation region 10a. The upper surface (main surface) of the semiconductor chip CH shown in FIG. 35 has a rectangular planar shape, and the sides 3a and 3b are long sides and the sides 3c and 3d are short sides. Also in the structure shown in FIG. 35, the technique including the modification described in the above embodiment can be applied.

  A second difference is that in the structure shown in FIG. 35, the planar area of the die pad 2 is smaller than the planar area of the semiconductor chip CH. As described above, when the plane area of the die pad 2 is smaller than the plane area of the semiconductor chip CH, a part of the lower surface of the semiconductor chip CH is in contact with the sealing body 6 (see FIG. 2). In addition to the effect obtained, the adhesion with the sealing body 6 can be improved.

  Further, the third difference is that, in the structure shown in FIG. 35, each lead 4 has a front end surface along the first direction Y, respectively, and the pad PD arranged along the long side of the semiconductor chip CH. It is a connected point. In other words, the front end surface of each lead 4 is opposed to the side 3a or side 3b which is the long side of the semiconductor chip CH (or opposed to the suspension lead). Such a structure can be applied without considering the lead P1 and the lead P25 shown in FIG. 27 described in the above embodiment. That is, of the plurality of leads 4, the lead P1 (or lead P19) disposed at a position closest to the vent portion 26 and the lead P2 (lead P20) disposed adjacent thereto are the wires described in the above embodiment. Take measures against flow. Further, when the long sides 6a and 6b (see FIG. 2) of the sealing body 6 (see FIG. 2) are divided into three equal parts, in the region 10a1 arranged on the shortest side 6d (see FIG. 2) side, FIG. As shown in FIG. 24, it is particularly preferable that the wire 5 is bonded to the overhanging region 4f that protrudes along the first direction Y from the central region 4e of the tip end portion 4b.

  In the above-described embodiment, the SOP is taken as an example. However, the present invention can be applied to a SON in which the lower surfaces of a plurality of leads are exposed from the sealing body on the lower surface of the sealing body. When applied to the SON, the lead length can be made shorter than the SOP, so that the arrangement interval of the product formation regions 10a arranged along the second direction X shown in FIGS. Can do. In addition, the lead forming step can be omitted by dividing the plurality of leads in the individualizing step described in the above embodiment.

  The present invention is applicable to a resin-encapsulated semiconductor device, for example, an SOP.

1 SOP (semiconductor device)
2 Die pad (chip mounting part)
2a, 2b Long side 2c, 2d Short side 2e Upper surface (chip mounting surface)
2f Lower surface 3a, 3b, 3c, 3d Side 3e Upper surface (main surface, surface)
3f Bottom surface (main surface, back surface)
4 Lead 4a Extension part 4b Tip part (bonding area)
4c Front end face 4e Central region 4f Overhang region 4g Recessed portion 5 Wire (conductive member)
6 Sealing body 6a, 6b Long side 6c, 6d Short side 6e Upper surface 6f Lower surface (back surface, mounting surface)
6g Side 6p Resin 7 Die bond material (adhesive)
9 Suspended lead 10 Lead frame 10a Product forming region 10a1, 10a2 region 10b Frame (frame)
11 Dam part (tie bar, frame part)
11a Tie bar 15 Heat stage 15a Lead support surface 15b Die pad support surface 16 Capillary 20 Mold 21 Upper mold (upper mold)
21a Mold surface (clamp surface, inner surface)
22 Lower mold (lower mold)
22a Mold surface (clamp surface, inner surface)
23, 24 Cavity 23a, 23b Long side 23c, 23d Short side 25 Gate part (supply part)
26 Vent part (discharge part)
27 Cavity (Flow path between product formation areas)
28 Runner part 29 Flow cavity BM Copper film CF1 Conductor film (Plating conductor film)
CF2 Nickel film (conductor film, plated conductor film)
CH Semiconductor chips P1 to P48 Lead PD pad (electrode pad, bonding pad)
X Second direction Y First direction

Claims (19)

In plan view, the first and second long sides arranged along the first direction and facing each other, and the first and second long sides arranged along the second direction orthogonal to the first direction and facing each other. And a second short side, and a manufacturing method of a semiconductor device having a sealing body for sealing a semiconductor chip,
(A) a die pad having an upper surface and a lower surface opposite to the upper surface; a plurality of suspension leads connected to the die pad; and a plurality of suspension leads disposed along each of the first and second long sides. Preparing a lead frame having a product forming area with leads;
(B) a semiconductor chip having a first main surface having a quadrangular planar shape, a plurality of electrode pads formed on the first main surface, and a second main surface opposite to the first main surface; In plan view, the die pad so that the first side, the second side, the third side, and the fourth side of the first main surface are aligned with the first, second long side, and the first and second short sides, respectively. Mounting on the upper surface of
(C) electrically connecting the plurality of electrode pads and the plurality of leads of the semiconductor chip via a plurality of wires, respectively.
(D) The molding die having a cavity that covers the product formation region, a supply part that is disposed on the first short side of the cavity, and a discharge part that is disposed on the second short side of the cavity. The semiconductor chip is disposed in a cavity, resin is supplied from the supply unit toward the discharge unit, the semiconductor chip, the plurality of wires, and the plurality of leads are sealed with the resin, and the sealing is performed. Forming a body,
Including
Among the plurality of leads, the plurality of leads each having a front end surface along the first direction and each having a front end surface along the first direction have the front end portion closest to the discharge portion. The first lead arranged and the second lead arranged next to the supply part side of the first lead are:
An extension part extending along the second direction from one side of the first or second long side toward the other side, and the tip surface located on the die pad side with respect to the extension part, and The distal end portion formed integrally with the extending portion and connected;
The leading ends of the first and second leads are
A central region having the same width as the extending portion, with a center axis of a line connecting the center of the boundary line between the extending portion and the leading end portion and the center of the end side of the leading end portion on the tip end surface side, And an overhanging area extending along the first direction from the center area,
The plurality of first electrode pads of the plurality of electrode pads are arranged along the first side or the second side among the four sides of the first main surface,
In the step (c),
One of the plurality of wires is connected to the first electrode pad, the other one of the first wires is connected to the overhang region of the first lead, and the first of the plurality of wires is connected to the first electrode pad. One of two wires is connected to the first electrode pad, and the other of the second wire is connected to the protruding region of the second lead. In claim 1,
When the first and second long sides are divided into three equal parts, the second region arranged on the first short side from the first region arranged closest to the second short side has the plurality of The third of the leads is arranged,
The third lead is
An extension part extending along the second direction from one side of the first or second long side toward the other side, and the tip surface located on the die pad side with respect to the extension part, and The distal end portion formed integrally with the extending portion and connected;
The tip of the third lead is
A central region having the same width as the extending portion, with a center axis of a line connecting the center of the boundary line between the extending portion and the leading end portion and the center of the end side of the leading end portion on the tip end surface side, And an overhanging area extending along the first direction from the center area,
In the step (c),
One of the plurality of wires is connected to the first electrode pad, and the other of the third wires is connected to the central region of the third lead. . In claim 2,
The projecting region of the first lead to which the first wire is connected is disposed closer to the discharge portion than the central region of the first lead,
The method of manufacturing a semiconductor device, wherein an extended region of the second lead to which the second wire is connected is disposed closer to the discharge portion than the central region of the second lead. In claim 3,
The first or second lead includes a first projecting region disposed closer to the supply unit than the central region of the first or second lead, and the discharge from the central region of the first or second lead. A second overhang region disposed on the part side,
The method of manufacturing a semiconductor device, wherein the second overhang region has a larger area than the first overhang region. In claim 1,
A fourth lead is disposed between the first lead and the discharge portion,
The fourth lead is
A tip end surface inclined with respect to the first direction, an extending portion extending along the second direction from one side of the first or second long side toward the other side, the inside of the cavity, and the semiconductor chip An inclined portion that bends toward the fourth side of the first main surface and inclines toward the fourth side with respect to the first direction, and has the tip surface that is located closer to the die pad than the inclined portion. And a tip portion formed integrally with the extending portion and connected thereto,
The second electrode pad of the plurality of electrode pads is disposed along the fourth side of the four sides of the first main surface,
In the step (c),
One of the plurality of wires is connected to the second electrode pad, and the other of the fourth wires is connected to a central region of the tip of the fourth lead. Manufacturing method. In claim 1,
When the first and second long sides are divided into three equal parts, the fifth lead of the plurality of leads is arranged in the first region arranged closest to the second short side,
The fifth lead is
An extension part extending along the second direction from one side of the first or second long side toward the other side, and the tip surface located on the die pad side with respect to the extension part, and The distal end portion formed integrally with the extending portion and connected;
The tip of the fifth lead is
A central region having the same width as the extending portion, with a center axis of a line connecting the center of the boundary line between the extending portion and the leading end portion and the center of the end side of the leading end portion on the tip end surface side, And an overhanging area extending along the first direction from the center area,
In the step (c),
One of a plurality of fifth wires of the plurality of wires is connected to the first electrode pad, and the other of the plurality of fifth wires is connected to the central region of one of the fifth leads. A method for manufacturing a semiconductor device. In plan view, the first and second long sides arranged along the first direction and facing each other, and the first and second long sides arranged along the second direction orthogonal to the first direction and facing each other. And a second short side, and a manufacturing method of a semiconductor device having a sealing body for sealing a semiconductor chip,
(A) a die pad having an upper surface and a lower surface opposite to the upper surface; a plurality of suspension leads connected to the die pad; and a plurality of suspension leads disposed along each of the first and second long sides. Preparing a lead frame having a plurality of product formation regions with leads;
(B) A plurality of semiconductor chips having a first main surface having a quadrangular planar shape, a plurality of electrode pads formed on the first main surface, and a second main surface opposite to the first main surface. In plan view so that the first side, the second side, the third side, and the fourth side of the first main surface are aligned with the first, second long side, and the first and second short sides, respectively. Mounting on the upper surface of the die pad provided in each of the plurality of product formation regions,
(C) electrically connecting the plurality of electrode pads provided in each of the plurality of semiconductor chips and the plurality of leads via a plurality of wires;
(D) A plurality of cavities that respectively cover the plurality of product formation regions, a supply unit disposed on the first short side of the plurality of cavities, and a discharge unit disposed on the second short side of the cavity The plurality of semiconductor chips are respectively disposed in the plurality of cavities of the molding die having the structure, the resin is supplied from the supply unit toward the discharge unit, the semiconductor chip, the plurality of wires, and the plurality of the plurality of cavities Sealing the lead with the resin to form the sealing body;
Including
In the lead frame, the plurality of product formation regions are arranged in a plurality of rows along the first direction,
In the step (d),
The resin is sequentially supplied from the first row of product formation regions to the end row of product formation regions,
Among the plurality of leads arranged in the product formation region of the terminal row, the plurality of leads each having a tip surface along the first direction and each having a tip surface along the first direction. The first lead disposed at the position closest to the discharge portion, and the second lead disposed next to the supply portion side of the first lead,
An extension part extending along the second direction from one side of the first or second long side toward the other side, and the tip surface located on the die pad side with respect to the extension part, and The distal end portion formed integrally with the extending portion and connected;
The leading ends of the first and second leads are
A central region having the same width as the extending portion, with a center axis of a line connecting the center of the boundary line between the extending portion and the leading end portion and the center of the end side of the leading end portion on the tip end surface side, A projecting region projecting from the central region along the first direction,
The plurality of first electrode pads of the plurality of electrode pads are arranged along the first side or the second side among the four sides of the first main surface,
In the step (c),
One of the plurality of wires is connected to the first electrode pad, the other one of the first wires is connected to the overhang region of the first lead, and the first of the plurality of wires is connected to the first electrode pad. One of two wires is connected to the first electrode pad, and the other of the second wire is connected to the protruding region of the second lead. In claim 7,
Each of the plurality of product formation regions includes the first lead and the second lead. In claim 8,
In each of the plurality of product formation regions,
When the first and second long sides are divided into three equal parts, the second region arranged on the first short side from the first region arranged closest to the second short side has the plurality of The third of the leads is arranged,
The third lead is
An extension part extending along the second direction from one side of the first or second long side toward the other side, and the tip surface located on the die pad side with respect to the extension part, and The distal end portion formed integrally with the extending portion and connected;
The tip of the third lead is
A central region having the same width as the extending portion, with a center axis of a line connecting the center of the boundary line between the extending portion and the leading end portion and the center of the end side of the leading end portion on the tip end surface side, A projecting region projecting from the central region along the first direction,
In the step (c),
One of the plurality of wires is connected to the first electrode pad, and the other of the third wires is connected to the central region of the third lead. . In claim 9,
The projecting region of the first lead to which the first wire is connected is disposed closer to the discharge portion than the central region of the first lead,
The method of manufacturing a semiconductor device, wherein an extended region of the second lead to which the second wire is connected is disposed closer to the discharge portion than the central region of the second lead. In claim 10,
The first or second lead includes a first projecting region disposed closer to the supply unit than the central region of the first or second lead, and the discharge from the central region of the first or second lead. A second overhang region disposed on the part side,
The method of manufacturing a semiconductor device, wherein the second overhang region has a larger area than the first overhang region. In claim 7,
A fourth lead is disposed between the first lead and the discharge portion,
The fourth lead is
A tip end surface inclined with respect to the first direction, an extending portion extending along the second direction from one side of the first or second long side toward the other side, the inside of the cavity, and the semiconductor chip An inclined portion that bends toward the fourth side of the first main surface and inclines toward the fourth side with respect to the first direction, and has the tip surface that is located closer to the die pad than the inclined portion. And a tip portion formed integrally with the extending portion and connected thereto,
The second electrode pad of the plurality of electrode pads is disposed along the fourth side of the four sides of the first main surface,
In the step (c),
One of the plurality of wires is connected to the second electrode pad, and the other of the fourth wires is connected to a central region of the tip of the fourth lead. Manufacturing method. In claim 9,
In each of the plurality of product formation regions,
The supply part of the molding die is arranged closer to either the first long side or the second long side than the center of the first short side, and the discharge part of the molding die is the The discharge unit and the supply unit that are arranged closer to the other of the first long side or the second long side than the center of the second short side and are adjacent to each other along the first direction are arranged in the first direction. Arranged to face each other,
Among the plurality of leads, a sixth lead facing the first lead along the second direction, and a seventh lead arranged next to the supply portion side of the sixth lead,
An extension part extending along the second direction from one side of the first or second long side toward the other side, and the tip surface located on the die pad side with respect to the extension part, and The distal end portion formed integrally with the extending portion and connected;
The tip ends of the sixth and seventh leads are
A central region having the same width as the extending portion, with a center axis of a line connecting the center of the boundary line between the extending portion and the leading end portion and the center of the end side of the leading end portion on the tip end surface side, A projecting region projecting from the central region along the first direction,
In the step (c),
One of the sixth wires of the plurality of wires is connected to the first electrode pad, the other of the sixth wires is connected to the overhang region of the sixth lead, and of the plurality of wires, One of the seventh wires is connected to the first electrode pad, and the other of the seventh wires is connected to the protruding region of the seventh lead. In plan view, the first and second long sides arranged along the first direction and facing each other, and the first and second long sides arranged along the second direction orthogonal to the first direction and facing each other. And a second short side, and a manufacturing method of a semiconductor device having a sealing body for sealing a semiconductor chip,
(A) a die pad having an upper surface and a lower surface opposite to the upper surface; a plurality of suspension leads connected to the die pad; and a plurality of suspension leads disposed along each of the first and second long sides. Preparing a lead frame having a product forming area with leads;
(B) a semiconductor chip having a first main surface having a quadrangular planar shape, a plurality of electrode pads formed on the first main surface, and a second main surface opposite to the first main surface; In plan view, the die pad so that the first side, the second side, the third side, and the fourth side of the first main surface are aligned with the first, second long side, and the first and second short sides, respectively. Mounting on the upper surface of
(C) electrically connecting the plurality of electrode pads and the plurality of leads of the semiconductor chip via a plurality of wires, respectively.
(D) The molding die having a cavity that covers the product formation region, a supply part that is disposed on the first short side of the cavity, and a discharge part that is disposed on the second short side of the cavity. The semiconductor chip is disposed in a cavity, resin is supplied from the supply unit toward the discharge unit, the semiconductor chip, the plurality of wires, and the plurality of leads are sealed with the resin, and the sealing is performed. Forming a body,
Including
Among the plurality of leads, the plurality of leads each having a front end surface along the first direction and each having a front end surface along the first direction have the front end portion closest to the discharge portion. The first lead arranged and the second lead arranged next to the supply part side of the first lead are:
An extension part extending along the second direction from one side of the first or second long side toward the other side, and the tip surface located on the die pad side with respect to the extension part, and The distal end portion formed integrally with the extending portion and connected;
The leading ends of the first and second leads are
A central region having the same width as the extension part, with a center axis of a line connecting the center of the boundary line of the tip part on the extension part side and the center of the edge side of the tip part on the tip surface side; And an overhanging area extending along the first direction from the central area,
The plurality of first electrode pads of the plurality of electrode pads are arranged along the first side or the second side among the four sides of the first main surface,
In the step (c),
One of the plurality of wires is connected to the first electrode pad, the other one of the first wires is connected to the overhanging region of the first lead, and of the plurality of wires, One of the second wires is connected to the first electrode pad, and the other of the second wires is connected to the projecting region of the second lead. In claim 14,
When the first and second long sides are divided into three equal parts, the second region arranged on the first short side from the first region arranged closest to the second short side has the plurality of The third of the leads is arranged,
The third lead is
An extension part extending along the second direction from one side of the first or second long side toward the other side, and the tip surface located on the die pad side with respect to the extension part, and The distal end portion formed integrally with the extending portion and connected;
The tip of the third lead is
A central region having the same width as the extension part, with a center axis of a line connecting the center of the boundary line of the tip part on the extension part side and the center of the edge side of the tip part on the tip surface side; And an overhanging area extending along the first direction from the central area,
In the step (c),
One of the plurality of wires is connected to the first electrode pad, and the other of the third wires is connected to the central region of the third lead. . In claim 15,
The projecting region of the first lead to which the first wire is connected is disposed closer to the discharge portion than the central region of the first lead,
The method of manufacturing a semiconductor device, wherein an extended region of the second lead to which the second wire is connected is disposed closer to the discharge portion than the central region of the second lead. In claim 16,
The first or second lead includes a first projecting region disposed closer to the supply unit than the central region of the first or second lead, and the discharge from the central region of the first or second lead. A second overhang region disposed on the part side,
The method of manufacturing a semiconductor device, wherein the second overhang region has a larger area than the first overhang region. In claim 14,
A fourth lead is disposed between the first lead and the discharge portion,
The fourth lead is
A tip end surface inclined with respect to the first direction, an extending portion extending along the second direction from one side of the first or second long side toward the other side, the inside of the cavity, and the semiconductor chip An inclined portion that bends toward the fourth side of the first main surface and inclines toward the fourth side with respect to the first direction, and the tip surface located on the die pad side with respect to the extending portion. And having a tip portion integrally formed with and connected to the extending portion,
The second electrode pad of the plurality of electrode pads is disposed along the fourth side of the four sides of the first main surface,
In the step (c),
One of the plurality of wires is connected to the second electrode pad, and the other of the fourth wires is connected to a central region of the tip of the fourth lead. Manufacturing method. In claim 14,
When the first and second long sides are divided into three equal parts, the fifth lead of the plurality of leads is arranged in the first region arranged closest to the second short side,
The fifth lead is
An extension part extending along the second direction from one side of the first or second long side toward the other side, and the tip surface located on the die pad side with respect to the extension part, and The distal end portion formed integrally with the extending portion and connected;
The tip of the fifth lead is
A central region having the same width as the extension part, with a center axis of a line connecting the center of the boundary line of the tip part on the extension part side and the center of the edge side of the tip part on the tip surface side; And an overhanging area extending along the first direction from the central area,
In the step (c),
One of a plurality of fifth wires of the plurality of wires is connected to the first electrode pad, and the other of the plurality of fifth wires is connected to the central region of one of the fifth leads. A method for manufacturing a semiconductor device.

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