TWI398535B - A vapor deposition apparatus, a vapor deposition apparatus, and a vapor deposition apparatus - Google Patents
A vapor deposition apparatus, a vapor deposition apparatus, and a vapor deposition apparatus Download PDFInfo
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- TWI398535B TWI398535B TW094121254A TW94121254A TWI398535B TW I398535 B TWI398535 B TW I398535B TW 094121254 A TW094121254 A TW 094121254A TW 94121254 A TW94121254 A TW 94121254A TW I398535 B TWI398535 B TW I398535B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/246—Replenishment of source material
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04D—NON-POSITIVE-DISPLACEMENT PUMPS
- F04D17/00—Radial-flow pumps, e.g. centrifugal pumps; Helico-centrifugal pumps
- F04D17/08—Centrifugal pumps
- F04D17/16—Centrifugal pumps for displacing without appreciable compression
- F04D17/168—Pumps specially adapted to produce a vacuum
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Engineering & Computer Science (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Description
本發明,是關於可使配置在真空容器內的基板蒸鍍有指定材料的蒸鍍裝置及可使指定材料形成蒸發的蒸發裝置,以及蒸鍍裝置所使用的蒸發裝置之切換方法。The present invention relates to a vapor deposition device capable of depositing a predetermined material on a substrate disposed in a vacuum container, an evaporation device capable of evaporating a predetermined material, and a method of switching an evaporation device used in the vapor deposition device.
於要對放置在真空下的基板表面蒸鍍指定材料以在基板表面形成薄膜的蒸鍍裝置中,是對配置在真空下的材料的蒸發源進行加熱使材料形成蒸發的同時。使該蒸發過的蒸發材料附著在被放置在相同真空下的基板表面藉此以在基板表面形成薄膜。In an evaporation apparatus in which a predetermined material is deposited on a surface of a substrate placed under vacuum to form a thin film on the surface of the substrate, the evaporation source of the material disposed under vacuum is heated to evaporate the material. The evaporated evaporation material is attached to the surface of the substrate placed under the same vacuum to thereby form a film on the surface of the substrate.
然而,於真空下即真空容器內配置有基板及蒸發源的蒸鍍裝置,在要追加或交換蒸發源時,是需將真空容器內恢復成大氣後,才可再度使真空容器形成真空,因此造成時間的浪費。However, in a vacuum chamber, that is, a vapor deposition device in which a substrate and an evaporation source are disposed in a vacuum container, when the evaporation source is to be added or exchanged, it is necessary to return the vacuum container to the atmosphere, and then the vacuum container can be vacuumed again. A waste of time.
已知提案有可消除該時間浪費的蒸鍍裝置(例如:參照日本特開2003-297565號公報)。There is a known vapor deposition apparatus which can eliminate the waste of time (see, for example, Japanese Laid-Open Patent Publication No. 2003-297565).
該蒸鍍裝置,是於真空容器的下部配置2個分別設有真空閥的有機EL材料的材料放出口,於各放出口連接著配置有材料蒸發源的蒸發室。In the vapor deposition device, two material discharge ports of an organic EL material each provided with a vacuum valve are disposed in a lower portion of the vacuum container, and an evaporation chamber in which a material evaporation source is disposed is connected to each discharge port.
透過該構成,例如執行是由來自於一方蒸發室的蒸發材料形成薄膜。例如:在要交換材料時,是對另一方的蒸發室配置裝有材料的蒸發源來進行加熱接著是使該蒸發室在真空的狀態下形成待機,於要進行交換時,是在關閉一方蒸發室側的真空閥後,打開另一方蒸發室側的真空閥,使蒸發材料導至真空容器,藉此避免產生材料交換時的作業時間浪費。With this configuration, for example, it is performed to form a thin film from an evaporation material from one evaporation chamber. For example, when the material is to be exchanged, the evaporation chamber of the other evaporation chamber is arranged to be heated, and then the evaporation chamber is placed in a vacuum state to stand by, and when exchange is to be performed, the evaporation is performed on the off side. After the vacuum valve on the chamber side, the vacuum valve on the other side of the evaporation chamber is opened to guide the evaporation material to the vacuum vessel, thereby avoiding waste of work time during material exchange.
然而,根據上述蒸鍍裝置的構成時,蒸發源為2個(2次份量)為止雖是沒有問題,但又要連續進行蒸鍍時,則需要下述構成。However, according to the configuration of the vapor deposition device described above, there is no problem until the evaporation source is two (two-times), but when vapor deposition is continuously performed, the following configuration is required.
即,設有2個蒸發源的同時,需分別設有在各蒸發源形成蒸發的蒸發材料要導入蒸鍍室內的導入管路,再加上,需事先在各導入管路的途中設有開關閥,在從一方蒸發源導入蒸發材料的期間,需先關閉另一方導入e管路的開關閥,於該狀態下,對另一方蒸發源進行交換(例如:參照日本專利第2912756號相關專利說明書)。That is, when two evaporation sources are provided, it is necessary to separately provide an introduction line for evaporating the evaporation material to be introduced into each evaporation source, and to introduce a switch in the middle of each introduction line. In the valve, when the evaporation material is introduced from one of the evaporation sources, the on-off valve of the other side of the e-line is first closed, and the other evaporation source is exchanged in this state (for example, refer to Japanese Patent No. 2912756) ).
但是,如上述,在設有2個蒸發源時,是對1個真空容器連接2個蒸發室,即蒸發材料的放出管是設置成2系統的同時其在真空容器內的連接位置是不同,所以例如在材料(蒸發源)已交換時,特別是在成膜途中變成斷料要從另一方蒸發室導入蒸發材料來使蒸鍍再度開工時,之前的蒸鍍條件和現在的蒸鍍條件將會不同,因此形成在基板表面上的薄膜品質會有不均的問題。However, as described above, when two evaporation sources are provided, two evaporation chambers are connected to one vacuum container, that is, the discharge pipe of the evaporation material is set to two systems, and the connection position in the vacuum container is different. Therefore, for example, when the material (evaporation source) has been exchanged, especially when the material is broken during the film formation, and the evaporation material is introduced from the other evaporation chamber to start the vapor deposition again, the previous evaporation conditions and the current evaporation conditions will be There will be problems in that the quality of the film formed on the surface of the substrate may be uneven.
此外,於需要如此高真空度的系統中,要完全密封是有困難,基於無論如何都會有些微的外氣侵入終究還是無法維持指定的真空度,及容器等的加熱會使其構成材料內部產生非氣體成份的緣故,真空泵浦是需要經常動作,例如於上述專利說明書所揭示的構成中,蒸發材料的一部份在導入蒸發室前就有可能透過真空泵浦排出外部,導致有材料使用效率降低的問題。In addition, in a system that requires such a high degree of vacuum, it is difficult to completely seal, and in any case, there is a slight intrusion of outside air, and the specified degree of vacuum cannot be maintained, and the heating of the container or the like causes the inside of the constituent material to be generated. For non-gas components, vacuum pumping requires frequent operation. For example, in the configuration disclosed in the above patent specification, a part of the evaporation material may be discharged to the outside through a vacuum pump before being introduced into the evaporation chamber, resulting in a decrease in material use efficiency. The problem.
再加上,雖然設有可回收一部份材料的回收盤,但針對經過一次加熱‧冷卻後的材料的再利用,因其品質未必與初次加熱‧冷卻的材料品質相同,所以視使用當時狀況而定有時會有材料的限制,此外於回收盤是需設置加熱裝置等,導致也會增加附帶設備。In addition, although there is a recovery tray that can recover a part of the material, the reuse of the material after one heating and cooling is not necessarily the same as the quality of the material of the initial heating and cooling, so the condition at the time of use is used. There are sometimes material restrictions, and heating devices are required for the recovery tray, which also increases the attached equipment.
於是,本發明,就以提供一種能夠防止要蒸鍍的材料的使用效率降低之蒸發裝置及使用該蒸發裝置的同時在從複數處將蒸發材料導入蒸鍍室內時不會造成蒸鍍條件產生變化的蒸鍍裝置,以及蒸鍍裝置之蒸發裝置的切換方法為目的。Accordingly, the present invention provides an evaporation apparatus capable of preventing a decrease in the use efficiency of a material to be vapor-deposited, and the use of the evaporation apparatus does not cause a change in vapor deposition conditions when the evaporation material is introduced into the vapor deposition chamber from a plurality of points. The vapor deposition device and the switching method of the evaporation device of the vapor deposition device are for the purpose.
為解決上述課題,本發明的蒸發裝置,是在指定真空度下使指定材料形成蒸發的蒸發裝置,其具備有蒸發用容器及載置台,上述蒸發用容器是連接於排氣裝置的同時設有材料放出孔能夠於上部放出蒸發過的蒸發材料,上述載置台是於上述蒸發用容器內被設置成透過昇降裝置形成昇降自如的同時能夠載置已收納有材料的材料收納容器;於蒸發用容器的材料放出孔的周圍,設有當材料收納容器透過載置台形成上昇時藉由包覆著其外周圍以抑制蒸發材料朝該蒸發用容器放出的的筒狀艙壁構件;於上述載置台及艙壁構件具備有要對材料收納容器進行加熱的加熱裝置;此外是於上述載置台側,設有當該載置台透過昇降裝置形成上昇時,可抵接於艙壁構件的下端部來阻止該艙壁構件內的蒸發材料排出的抵接部。In order to solve the above problems, the evaporation device of the present invention is an evaporation device that evaporates a predetermined material at a predetermined degree of vacuum, and includes an evaporation container and a mounting table, and the evaporation container is connected to the exhaust device. The material discharge hole is capable of discharging the evaporated evaporation material in the upper portion, and the mounting table is provided in the evaporation container so as to be movable up and down by the lifting device, and can store the material storage container in which the material is stored; a cylindrical bulkhead member for suppressing evaporation of the evaporation material toward the evaporation container when the material storage container is raised through the mounting table and is formed to surround the material discharge opening; The bulkhead member includes a heating device for heating the material storage container, and is provided on the mounting table side when the mounting table is raised by the lifting device, and is capable of abutting against the lower end portion of the bulkhead member to block the An abutment portion of the evaporative material discharged from the bulkhead member.
另外,本發明的蒸鍍裝置,具備有:至少2台的上述發明相關的蒸發裝置;在指定真空度下使蒸發材料蒸鍍在被蒸鍍構件上的1個蒸鍍用容器;及,橫跨在該蒸鍍用容器和上述各蒸發裝置的材料放出孔之間來形成設置的材料輸送管道;上述材料輸送管道的一端側是連接於上述蒸鍍用容器側並且另一端側是形成分歧各別連接於上述各蒸發裝置的材料放出孔;再加上是於上述形成分歧的各材料輸送管道的途中分別配置有開關閥。Further, the vapor deposition device of the present invention includes at least two evaporation apparatuses according to the invention described above, and one vapor deposition container in which an evaporation material is vapor-deposited on a vapor deposition member at a predetermined degree of vacuum; Forming a material conveying pipe between the vapor deposition container and the material discharge hole of each of the evaporation devices; one end side of the material conveying pipe is connected to the vapor deposition container side and the other end side is formed to be different The material discharge holes are not connected to the evaporation devices; and the on-off valves are disposed in the middle of the respective material delivery pipes that form the divergence.
又加上,本發明的蒸鍍裝置之蒸發裝置的切換方法,是一種要對至少採用2台蒸發裝置將蒸發材料供給至1個蒸鍍用容器來進行蒸鍍的上述發明相關的蒸鍍裝置中所使用的蒸發裝置進行切換的方法,其具備以下步驟:預備加熱步驟,是在一方的蒸發裝置的材料變成不足狀態之前,使另一方的蒸發裝置的材料收納容器上昇至艙壁構件內,以加熱裝置加熱成要比材料的蒸發溫度還低的指定溫度;雜質排出步驟,是從艙壁構件降下被加熱成指定溫度的材料收納容器,以排氣裝置將該材料收納容器內氣化後的雜質排出外部;正式加熱步驟,是在雜質排出後,再度使材料收納容器上昇至艙壁構件內將材料收納容器加熱成材料的蒸發溫度;及,材料輸送管道切換步驟,是在對被設置在上述一方的蒸發裝置的材料輸送管道上的開關閥進行關閉的同時打開被設置在上述另一方的蒸發裝置的材料輸送管道上的開關閥。In addition, the method of switching the evaporation device of the vapor deposition device of the present invention is a vapor deposition device according to the above invention in which at least two evaporation devices are used to supply the evaporation material to one vapor deposition container for vapor deposition. The method for switching the evaporation device used in the present invention includes the step of preliminarily heating the material storage container of the other evaporation device into the bulkhead member before the material of one of the evaporation devices becomes insufficient. The heating device is heated to a predetermined temperature lower than the evaporation temperature of the material; the impurity discharging step is to lower the material storage container heated to a predetermined temperature from the bulkhead member, and vaporize the material storage container by the exhaust device. The impurity is discharged to the outside; the formal heating step is to elevate the material storage container to the evaporation temperature of the material storage container to the material in the bulkhead member after the impurity is discharged; and the material conveying pipe switching step is set in the pair Opening and closing at the same time as the on-off valve on the material conveying pipe of the above-mentioned one evaporation device is closed The other evaporated material conveying apparatus off valve on the pipe.
根據上述蒸發裝置時,因是構成為以排氣裝置來維持蒸發用容器內清潔乾淨的同時。使材料收納容器上昇至材料放出孔所連通的艙壁構件內以加熱裝置來進行加熱,所以蒸發材料幾乎全部都能被引導至材料放出孔,因此能夠極力減少排氣裝置造成蒸發材料的排出,能夠有效利用材料。即,能夠防止材料使用效率的降低。According to the above-described evaporation device, the inside of the evaporation container is kept clean by the exhaust device. The material storage container is raised to the bulkhead member through which the material discharge hole is communicated to be heated by the heating device, so that almost all of the evaporation material can be guided to the material discharge hole, so that the discharge of the evaporation material by the exhaust device can be minimized. Ability to use materials efficiently. That is, it is possible to prevent a decrease in material use efficiency.
此外,根據上述蒸鍍裝置時,當交替使用至少2台蒸發裝置來連續進行蒸鍍時,因是從各蒸發裝置要將蒸發材料導至蒸發用容器的材料輸送管道的蒸鍍室側的連接處是為一處,所以蒸鍍條件不會產生變化,因此能夠防止要形成在被蒸鍍構件上的薄膜品質產生不均現象。Further, according to the vapor deposition apparatus described above, when at least two evaporation apparatuses are alternately used for continuous vapor deposition, the evaporation material is guided from each evaporation apparatus to the vapor deposition chamber side of the material delivery pipe of the evaporation container. Since there is one place, the vapor deposition conditions do not change, and thus unevenness in the quality of the film to be formed on the vapor-deposited member can be prevented.
再加上,根據上述切換方法時,因是在預備加熱的階段,使材料收納容器及材料中所含的雜質形成氣化的同時,材料收納容器一旦從艙壁構件降下就以排氣裝置來使該雜質排出外部,所以能夠防止連續蒸鍍時所使用的至少2台蒸發裝置的切換造成被蒸鍍構件上形成的薄膜品質降低。In addition, according to the above switching method, the material storage container and the material contained in the material are vaporized at the stage of preliminary heating, and the material storage container is evacuated by the exhaust device when it is lowered from the bulkhead member. Since this impurity is discharged to the outside, it is possible to prevent the quality of the film formed on the vapor-deposited member from deteriorating due to the switching of at least two evaporation apparatuses used in the continuous vapor deposition.
以下,是根據第1圖至第6圖來對本發明實施形態相關的蒸發裝置及使用該蒸發裝置之蒸鍍裝置以及該蒸鍍裝置之蒸發裝置的切換方法進行說明。Hereinafter, an evaporation apparatus according to an embodiment of the present invention, a vapor deposition apparatus using the evaporation apparatus, and a switching method of the evaporation apparatus of the vapor deposition apparatus will be described with reference to FIGS. 1 to 6 .
首先,是針對為全體構成的蒸鍍裝置進行說明。First, the vapor deposition device which is configured as a whole will be described.
該蒸鍍裝置,如第1圖所示,大區分為是由:構成為可使做為被蒸鍍構件的玻璃基板1水平方向插入成其蒸鍍面是在下方的同時是由保持具2來保持該玻璃基板1的蒸鍍用容器(容器內是稱為蒸鍍室3a,此外雖未加以圖示,但於容器的側壁部是設有玻璃基板搬出入用開口部的同時另外還具備有真空泵浦等排氣裝置)3;配置在該蒸鍍用容器3的下方可使指定材料(於有機EL畫面用的狀況時,是使用有機材料)形成蒸發[以下,指定材料(原料)是稱為蒸鍍材料(A),蒸發過的材料是稱為蒸發材料(B)]的2台蒸發裝置4(4A、4B);及,連接各蒸發裝置4和上述蒸鍍用容器3來做為要將蒸發材料輸送至蒸鍍室3a用的材料輸送管道的材料輸送管5所構成。As shown in Fig. 1, the vapor deposition apparatus is mainly configured such that the glass substrate 1 as the vapor deposition member can be inserted in the horizontal direction so that the vapor deposition surface is below and the holder 2 is held. In addition, although the inside of the container is a vapor deposition chamber 3a, the inside of the container is not shown, but the side wall portion of the container is provided with an opening for inserting and receiving the glass substrate. There is a venting device such as a vacuum pumping device 3; and a predetermined material (in the case of an organic EL screen, an organic material is used) to form an evaporation under the vapor deposition container 3 (hereinafter, the specified material (raw material) is It is called a vapor deposition material (A), the evaporated material is two evaporation apparatuses 4 (4A, 4B) called an evaporation material (B), and the evaporation apparatus 4 and the vapor deposition container 3 are connected. It is constituted by a material conveying pipe 5 for conveying the evaporation material to the material conveying pipe for the vapor deposition chamber 3a.
上述各蒸發裝置4,是由:內部具有蒸發室11a的蒸發用容器11;連接於該蒸發用容器11的壁部使該蒸發室11a內形成指定的真空度(例如:1×10-4 Pa程)的同時做為要維持該真空度用之排氣裝置的真空泵浦12;及,於相同蒸發室11a內連結於做為昇降裝置的昇降用汽缸裝置13被設置成昇降自如的同時可載置要收納蒸鍍材料並且上面是形成開放的圓筒狀材料收納容器(亦稱坩鍋)14的圓板狀載置台15所構成。Each of the evaporation devices 4 includes an evaporation container 11 having an evaporation chamber 11a therein, and a wall portion connected to the evaporation container 11 to form a predetermined degree of vacuum in the evaporation chamber 11a (for example, 1 × 10 -4 Pa). At the same time, the vacuum pump 12 for maintaining the vacuum of the exhaust device is provided; and the lifting cylinder device 13 connected to the lifting device in the same evaporation chamber 11a is installed to be lifted and lowered while being loadable. The vapor deposition material is placed and the upper surface is formed by a disk-shaped mounting table 15 which forms an open cylindrical material storage container (also referred to as a crucible) 14.
於上述蒸發用容器11的側面,設有,要搬出入材料收納容器14用的搬出入用開口部11b及可使搬出入用開口部11b形成開閉的開閉用門板16。In the side surface of the evaporation container 11, the opening/receiving opening portion 11b for loading and unloading the material storage container 14 and the opening and closing door panel 16 for opening and closing the opening/closing opening portion 11b are provided.
此外,於上述蒸發用容器11的上壁部11c,形成有要放出蒸發材料用的材料放出孔17的同時,於該材料放出孔17的孔道途中,設有要做為可開閉該材料放出孔17或可調整其開口面積的開關閥即針閥18。Further, a material discharge hole 17 for evaporating material is formed in the upper wall portion 11c of the evaporation container 11, and a material discharge hole is provided to be opened and closed in the middle of the hole of the material discharge hole 17. 17 or an on-off valve 18 that can adjust its opening area.
再加上,如第2圖所示,於蒸發用容器11的上壁部11c的材料放出孔17的周圍下面,垂下設有包覆著透過載置台15形成上昇的材料收納容器14的周圍藉此極力減少(抑制)要從該材料收納容器14放出的蒸發材料朝蒸發室11a移動的筒狀艙壁構件19的同時,在載置台15成上昇時,至少,其上面的周緣部是接觸於艙壁構件19的下端部形成為沒有間隙的環狀抵接部(緊貼部)15a。另,於尺寸上,艙壁構件19和材料收納容器14的間隙是要盡量小。Further, as shown in Fig. 2, on the lower surface of the material discharge hole 17 of the upper wall portion 11c of the evaporation container 11, the periphery of the material storage container 14 which is covered with the transmission mounting table 15 is suspended. This is to reduce (suppress) the tubular bulkhead member 19 which is to be moved from the material storage container 14 toward the evaporation chamber 11a, and at the same time, when the mounting table 15 is raised, at least the upper peripheral portion thereof is in contact with The lower end portion of the bulkhead member 19 is formed as an annular abutting portion (adjacent portion) 15a having no gap. Further, in terms of size, the gap between the bulkhead member 19 and the material storage container 14 is as small as possible.
接著,為要將蒸發用容器11內的蒸鍍材料(A)加熱成指定溫度,是於載置台15及艙壁構件19的外周面,設有電熱器等加熱裝置20、21。Then, in order to heat the vapor deposition material (A) in the evaporation container 11 to a predetermined temperature, heating devices 20 and 21 such as electric heaters are provided on the outer circumferential surfaces of the mounting table 15 and the bulkhead member 19.
此外,上述材料輸送管5是要對1個蒸鍍用容器3連接2台蒸發裝置5,其上端部5a是與蒸鍍用容器3的底壁部3b形成一處連接(連通),另外其下端側是分歧為2支形成Y字形管道的同時各分歧下端部5b、5c,是分別連接(連通)於各蒸發用容器11的材料放出孔17。In the above-described material conveying pipe 5, two evaporation apparatuses 5 are connected to one vapor deposition container 3, and the upper end portion 5a is connected (connected) to the bottom wall portion 3b of the vapor deposition container 3, and the other. The lower end side is divided into two Y-shaped pipes, and the respective lower end portions 5b and 5c are connected to (connected) the material discharge holes 17 of the respective evaporation containers 11.
另,雖未加以圖示,但對於蒸發材料的移動路徑,是全部都設有電熱器等加熱裝置,以維持其蒸發溫度。此外,是由設置在材料輸送管5及蒸發用容器11側的材料放出孔17來構成材料輸送管道。Further, although not shown, all of the moving paths of the evaporation material are provided with heating means such as an electric heater to maintain the evaporation temperature. Further, the material delivery pipe is constituted by the material discharge holes 17 provided on the material conveying pipe 5 and the evaporation container 11 side.
其次,是針對上述蒸鍍裝置的蒸鍍方法,特別是針對蒸發裝置的蒸發動作並且著眼在2台蒸發裝置切換時的動作來進行說明。Next, the vapor deposition method of the vapor deposition device described above will be described in particular with respect to the evaporation operation of the evaporation device and the operation at the time of switching between the two evaporation devices.
首先,是簡單地說明由一台(一方)的蒸發裝置4A對保持在蒸鍍用容器3內的玻璃基板1表面進行蒸發材料蒸鍍時的狀況。First, the state of evaporating material vapor deposition on the surface of the glass substrate 1 held in the vapor deposition container 3 by one (one) evaporation device 4A will be briefly described.
如第1圖所示,在蒸發用容器11內的載置台15上載置已收納有蒸鍍材料(A)的材料收納容器14後,使真空泵浦12起動來形成指定真空度的同時,維持著該真空度。另,蒸鍍進行期間,為要排出例如從蒸發裝置4A的各構想機器的連接部侵入的空氣及從構成機器本體放出的雜質(是為非氣體成份),真空泵浦12是形成連續運轉。As shown in Fig. 1, after the material storage container 14 in which the vapor deposition material (A) is stored is placed on the mounting table 15 in the evaporation container 11, the vacuum pump 12 is started to form a predetermined degree of vacuum while maintaining the predetermined degree of vacuum. The degree of vacuum. In the vapor deposition process, the vacuum pump 12 is continuously operated in order to discharge, for example, air that has entered from the connection portion of each of the concept machines of the evaporation device 4A and impurities (which are non-gas components) that are emitted from the device body.
其次,如第3圖所示,是在材料收納容器14已上昇(移動)至艙壁構件19內的狀態下,由各加熱裝置20、21將該材料收納容器14加熱至指應溫度為止,使材料收納容器14的蒸鍍材料(A)開始蒸發。接著,開放針閥18,使蒸發過的蒸發材料(B)從材料放出孔17經由材料輸送管5導入至蒸鍍用容器3的蒸鍍室3,然後附著在玻璃基板1的表面上形成薄膜。當然,在蒸發材料的放出執行期間,該材料輸送管是有加熱以避免蒸發材料附著在其表面。Next, as shown in FIG. 3, in a state where the material storage container 14 has been raised (moved) into the bulkhead member 19, the material storage container 14 is heated to the temperature of the finger by the respective heating devices 20, 21. The vapor deposition material (A) of the material storage container 14 starts to evaporate. Next, the needle valve 18 is opened, and the evaporated evaporation material (B) is introduced from the material discharge hole 17 into the vapor deposition chamber 3 of the vapor deposition container 3 through the material transfer tube 5, and then adhered to the surface of the glass substrate 1 to form a film. . Of course, during the discharge of the evaporating material, the material delivery tube is heated to prevent the evaporating material from adhering to its surface.
接著,當一方的蒸發裝置4A的材料收納容器14內的蒸鍍材料逐漸減少時,就開始準備要切換成是由另一方的蒸發裝置4B來進行蒸發材料的供給(導入)。Next, when the vapor deposition material in the material storage container 14 of one of the evaporation devices 4A gradually decreases, preparation is made to switch to supply (import) of the evaporation material by the other evaporation device 4B.
當進行該切換時,於另一方的蒸發裝置4B是在進行預備加熱的同時排出水份等雜質(以氣體成份狀態)後,進行原來的蒸發溫度加熱(以下稱正式加熱)。例如:蒸發溫度(正式加熱溫度)為200℃時,使材料不形成蒸發的溫度即預備加熱溫度,是要比200℃還低例如為150℃的溫度,預備加熱溫度是可任意設定在要比正式加熱溫度還低數度~數10度程度範圍。此外,預備加熱溫度若接近材料的蒸發溫度則可縮短要轉變為蒸發的時間。When the switching is performed, the other evaporation device 4B discharges impurities such as moisture (in a gas component state) while performing preliminary heating, and then performs the original evaporation temperature heating (hereinafter referred to as "main heating"). For example, when the evaporation temperature (official heating temperature) is 200 ° C, the temperature at which the material does not form evaporation, that is, the preliminary heating temperature, is lower than 200 ° C, for example, 150 ° C, and the preliminary heating temperature can be arbitrarily set. The formal heating temperature is also in the range of a few degrees to a few 10 degrees. In addition, the preheating temperature can be shortened to the time of evaporation if it is close to the evaporation temperature of the material.
以下,是針對蒸發裝置4的切換方法進行詳細說明。Hereinafter, a method of switching the evaporation device 4 will be described in detail.
即,如第3圖所示,在由一方的蒸發裝置4A進行蒸發材料(B)的供給期間,已載置在另一方的蒸發裝置4B的載置台15上的材料收納容器14,是由昇降用汽缸裝置13上昇至艙壁構件19內的同時,由設置在載置台15及艙壁構件19外周圍的加熱裝置20、21加熱成要比蒸鍍材料的蒸發溫度還低的指定溫度,當然,於該預備加熱時,也是由真空泵浦12來進行著排氣(預備加熱步驟)。In other words, as shown in Fig. 3, during the supply of the evaporation material (B) by one of the evaporation devices 4A, the material storage container 14 placed on the mounting table 15 of the other evaporation device 4B is lifted and lowered. When the cylinder device 13 is raised into the bulkhead member 19, the heating means 20, 21 provided on the outer periphery of the mounting table 15 and the bulkhead member 19 are heated to a predetermined temperature lower than the evaporation temperature of the vapor deposition material. At the time of the preliminary heating, the vacuum pump 12 is also used for exhausting (preheating step).
接著,當材料收納容器14被加熱成指定溫度時,如第4圖所示,一旦由昇降用汽缸裝置13降下載置台15後,就從艙壁構件19抽出材料收納容器14。Next, when the material storage container 14 is heated to a predetermined temperature, as shown in FIG. 4, once the table 15 is lowered by the lifting cylinder device 13, the material storage container 14 is taken out from the bulkhead member 19.
如此一來,艙壁構件19內所存在的水份等雜質就會由真空泵浦12來使其經過蒸發室11a排出在外部(雜質排出步驟)。As a result, impurities such as moisture present in the bulkhead member 19 are discharged to the outside through the evaporation chamber 11a by the vacuum pump 12 (impurity discharging step).
一旦完成該雜質的排出,如第5圖所示,就再度上昇載置台15使材料收納容器14上昇(移動)至艙壁構件19內。此時,因設置在載置台15側的環狀抵接部15a是抵接於艙壁構件19的下端部,所以艙壁構件19內蒸發過的蒸發材料(B)不會被抽出排出外部。即,因是由要排出雜質用的真空泵浦12來防止蒸發材料被排出外部,因此能夠防止蒸發材料使用效率的降低。When the discharge of the impurities is completed, as shown in Fig. 5, the mounting table 15 is again raised, and the material storage container 14 is raised (moved) into the bulkhead member 19. At this time, since the annular abutting portion 15a provided on the mounting table 15 side abuts against the lower end portion of the bulkhead member 19, the evaporated material (B) evaporated in the bulkhead member 19 is not drawn out and discharged to the outside. That is, since the evaporation pump 12 is prevented from being discharged to the outside by the vacuum pump 12 for discharging the impurities, it is possible to prevent the use efficiency of the evaporation material from being lowered.
其次,是由加熱裝置20、21將材料收納容器14加熱成蒸發溫度來進行蒸發(正式加熱步驟)的同時,如第6圖所示,關閉被設置在一方的蒸發裝置4A上的針閥18並且打開被設置在另一方的蒸發裝置4B上的針閥18,使在另一方的蒸發裝置4B蒸發過的蒸發材料(B)經由材料輸送管5導入蒸鍍室3a內接著進行蒸發材料的蒸鍍使其附著在玻璃基板1上形成薄膜。另,這之後,是降下一方的蒸發裝置4A的材料收納容器14,打開開閉用門板16取出材料收納容器14,換成新的材料收納容器14即可。此外,在另一方的蒸發裝置4B進行的正式加熱,若是能夠根據蒸發裝置4A的材料使用狀況於適當時期進行開始,則能夠使切換時間縮短成數分鐘階級。Next, the material storage container 14 is heated by the heating devices 20 and 21 to evaporate to evaporate (the main heating step), and as shown in Fig. 6, the needle valve 18 provided on one of the evaporation devices 4A is closed. Further, the needle valve 18 provided on the other evaporation device 4B is opened, and the evaporation material (B) evaporated in the other evaporation device 4B is introduced into the vapor deposition chamber 3a via the material delivery pipe 5, followed by steaming of the evaporation material. The plating is applied to the glass substrate 1 to form a film. After that, the material storage container 14 of the evaporation device 4A is lowered, and the material storage container 14 is opened by opening and closing the door panel 16 and replaced with a new material storage container 14. Further, if the main heating by the other evaporation device 4B can be started at an appropriate timing according to the material use condition of the evaporation device 4A, the switching time can be shortened to a few minutes.
於此,將上述蒸發裝置的切換方法以步驟來表示時則如以下所述。Here, when the switching method of the above-described evaporation apparatus is represented by a step, it is as follows.
即,於該切換方法,其是一種要對至少採用2台蒸發裝置將蒸發材料供給至1個蒸鍍用容器來進行蒸鍍時所使用的蒸發裝置進行切換的方法,其具備以下步驟:預備加熱步驟,是於一方的蒸發裝置中在材料變成不足狀態之前,使另一方的蒸發裝置的材料收納容器上昇至艙壁構件內,以加熱裝置加熱成要比材料的蒸發溫度還低的指定溫度;雜質排出步驟,是從艙壁構件降下被加熱成指定溫度的材料收納容器,以真空泵浦將該材料收納容器內氣化後的雜質排出外部;正式加熱步驟,是在雜質排出後,再度使材料收納容器上昇至艙壁構件內將材料收納容器加熱成材料的蒸發溫度;及,材料輸送管道切換步驟,是對設置在上述一方的蒸發裝置的材料放出孔的孔道途中的針閥進行關閉的同時打開被設置在上述另一方的蒸發裝置的材料放出孔的孔道途中的針閥。In other words, in the switching method, a method of switching the evaporation device used when at least two evaporation devices are used to supply the evaporation material to one vapor deposition container for vapor deposition is provided, and the method includes the following steps: In the heating step, the material storage container of the other evaporation device is raised into the bulkhead member in one of the evaporation devices before the material becomes insufficient, and the heating device is heated to a specified temperature lower than the evaporation temperature of the material. The impurity discharging step is a material storage container that is heated to a predetermined temperature from the bulkhead member, and vacuum-pumps the impurities vaporized in the material storage container to the outside; the main heating step is performed after the impurities are discharged. The material storage container is raised to an evaporation temperature in which the material storage container is heated into a material in the bulkhead member; and the material conveying pipe switching step is to close the needle valve in the middle of the hole provided in the material discharge hole of the one evaporation device. At the same time, the needle valve is disposed in the middle of the hole of the material discharge hole of the evaporation device of the other side.
如以上所述,由於是透過材料輸送管5將2台的蒸發裝置4連接於蒸鍍用容器3的同時,以針閥18的開關來切換蒸鍍所使用的蒸發裝置4,所以能夠連續進行蒸鍍的同時,要對蒸鍍室3a進行材料供給的供給處(導入處)是為1處,因此與例如2台的蒸發裝置是使用個別的材料輸送管分別連接(供給處不同)在蒸鍍用容器的案例相比,其在蒸發裝置形成切換後,因蒸鍍條件不會產生變化,所以能夠防止要形成玻璃基板1上的薄膜品質產生不均現象。As described above, the two evaporation devices 4 are connected to the vapor deposition container 3 through the material transfer pipe 5, and the evaporation device 4 used for vapor deposition is switched by the switch of the needle valve 18, so that continuous operation can be performed. At the same time as the vapor deposition, the supply (introduction) of the material supply to the vapor deposition chamber 3a is one. Therefore, for example, two evaporation devices are connected by separate material delivery pipes (different from the supply). In the case of the plating container, since the vapor deposition conditions do not change after the switching of the evaporation device is formed, unevenness in the quality of the film to be formed on the glass substrate 1 can be prevented.
此外,因是在預備加熱階段,使附著在材料收納容器14上及蒸鍍材料所含有的雜質氣化的同時,材料收納容器14一旦從艙壁構件19抽出至外側則該雜質就會由真空泵浦18排往外部,所以能夠防止連續蒸鍍時所使用的2台蒸發裝置的切換造成玻璃基板1表面上形成的薄膜品質降低。Further, in the preliminary heating stage, the impurities contained in the vapor deposition material adhered to the material storage container 14 and the material storage container 14 is evacuated from the bulkhead member 19 to the outside, and the impurities are supplied by the vacuum pump. Since the discharge 18 is discharged to the outside, it is possible to prevent the deterioration of the quality of the film formed on the surface of the glass substrate 1 by switching between the two evaporation devices used in the continuous vapor deposition.
再加上,在正式加熱時的階段,因材料收納容器14是上昇在艙壁構件19內的同時由載置台使其幾乎成密閉狀態,所以即時在為要排出從蒸發裝置4的構成機器類侵入的空氣、雜質等而驅動真空泵浦12時,還是能夠防止(抑制)從材料收納容器14放出的蒸發材料被排出外部,因此能夠防止蒸發材料的使用效率降低。In addition, at the stage of the main heating, the material storage container 14 is almost in a sealed state by the mounting table while being raised in the bulkhead member 19, so that the device is discharged from the evaporation device 4 immediately. When the vacuum pump 12 is driven by intrusion of air, impurities, or the like, it is possible to prevent (suppress) the evaporation material discharged from the material storage container 14 from being discharged to the outside, and thus it is possible to prevent the use efficiency of the evaporation material from being lowered.
然而,於上述實施形態中,雖是於載置台15的外周圍設有兼為材料收納容器14位置限制部的環狀抵接部15a,但也可如第7圖所示,例如是於載置台15的抵接部15a的艙壁構件19內側位置,形成有環狀的突出部(位置限制部的其他例子)15b,藉此能夠正確移動(引導)材料收納容器14至艙壁構件19內。於該狀況,同樣地,艙壁構件19和材料收納容器14的間隙要盡量小。However, in the above-described embodiment, the annular abutting portion 15a which is also the position regulating portion of the material storage container 14 is provided on the outer periphery of the mounting table 15, but as shown in Fig. 7, for example, An annular projecting portion (another example of the position restricting portion) 15b is formed at a position inside the bulkhead member 19 of the abutting portion 15a of the table 15, whereby the material storage container 14 can be accurately moved (guided) into the bulkhead member 19 . In this case as well, the gap between the bulkhead member 19 and the material storage container 14 is as small as possible.
此外,在針閥18所形成的關閉為不充分時,也可於材料輸送管5的分歧下端部5b、5c又設有針閥等開關閥。Further, when the closing of the needle valve 18 is insufficient, the switching valve such as a needle valve may be further provided at the branch lower end portions 5b and 5c of the material conveying pipe 5.
再加上,於上述實施形態中,雖是以具備有2台的蒸發裝置來進行了說明,但也可具備有3台以上的蒸發裝置。Further, in the above embodiment, the description has been made by providing two evaporation apparatuses, but three or more evaporation apparatuses may be provided.
本發明,如以上所述,是於設有複數的蒸發裝置的同時在要將這些蒸發裝置蒸發過的蒸發材料連續性或切換材料種類導入至蒸鍍室時,透過設置在材料輸送管道上的開關閥的操作,就能夠在不浪費蒸發材料並且蒸鍍條件不產生變化的狀況下進行蒸鍍,因此最適合被利用在例如要將有機EL材料蒸鍍在基板上的蒸鍍作業。理所當然,除此之外也能夠有效利用在各種的蒸鍍材料的蒸鍍作業。According to the present invention, as described above, when a plurality of evaporation devices are provided, the evaporation material continuity or the switching material type to be evaporated by the evaporation devices is introduced into the vapor deposition chamber, and is transmitted through the material conveying pipe. By operating the on-off valve, vapor deposition can be performed without wasting the evaporation material and the vapor deposition conditions are not changed. Therefore, it is most suitable for use in a vapor deposition operation in which an organic EL material is to be vapor-deposited on a substrate. Of course, in addition to this, it is also possible to effectively utilize the vapor deposition work of various vapor deposition materials.
1...玻璃基板1. . . glass substrate
2...保持具2. . . Holder
3...蒸鍍用容器3. . . Vapor deposition container
3a...蒸鍍室3a. . . Evaporation chamber
3b...底壁部3b. . . Bottom wall
4(4A、4B)...蒸發裝置4 (4A, 4B). . . Evaporation device
5...材料輸送管5. . . Material delivery tube
5a...上端部5a. . . Upper end
5b、5c...分岐下端部5b, 5c. . . Dividing the lower end
11...蒸發用容器11. . . Evaporation container
11a...蒸發室11a. . . Evaporation chamber
11c...上壁部11c. . . Upper wall
11b...搬出入用開口部11b. . . Moving in and out
12...真空泵浦12. . . Vacuum pump
13...昇降用汽缸裝置13. . . Lifting cylinder device
14...材枓收納容器14. . . Material storage container
15...載置台15. . . Mounting table
15a...環狀抵接部15a. . . Annular abutment
15b...環狀突出部15b. . . Annular projection
16...開閉用門板16. . . Opening and closing door panel
17...材料放出孔17. . . Material discharge hole
18...針閥18. . . Needle valve
19...艙壁構件19. . . Bulkhead member
20、23...加熱裝置20, 23. . . heating equipment
A...蒸鍍材料A. . . Evaporating material
B...蒸發材料B. . . Evaporation material
第1圖為表示本發明實施形態相關的蒸鍍裝置概略構成剖面圖。Fig. 1 is a cross-sectional view showing a schematic configuration of a vapor deposition device according to an embodiment of the present invention.
第2圖為本發明實施形態相關的蒸鍍裝置之蒸發裝置的要部剖面圖。Fig. 2 is a cross-sectional view of an essential part of an evaporation apparatus of a vapor deposition device according to an embodiment of the present invention.
第3圖為本發明實施形態相關的蒸鍍裝置的蒸鍍動作說明用剖面圖。Fig. 3 is a cross-sectional view for explaining a vapor deposition operation of the vapor deposition device according to the embodiment of the present invention.
第4圖為本發明實施形態相關的蒸鍍裝置的蒸鍍動作說明用剖面圖。Fig. 4 is a cross-sectional view for explaining a vapor deposition operation of the vapor deposition device according to the embodiment of the present invention.
第5圖為本發明實施形態相關的蒸鍍裝置的蒸鍍動作說明用剖面圖。Fig. 5 is a cross-sectional view for explaining a vapor deposition operation of the vapor deposition device according to the embodiment of the present invention.
第6圖為本發明實施形態相關的蒸鍍裝置的蒸鍍動作說明用剖面圖。Fig. 6 is a cross-sectional view for explaining a vapor deposition operation of the vapor deposition device according to the embodiment of the present invention.
第7圖為表示本發明實施形態相關的蒸鍍裝置之蒸發裝置變形例的要部剖面圖。Fig. 7 is a cross-sectional view of an essential part showing a modification of the evaporation apparatus of the vapor deposition device according to the embodiment of the present invention.
1...玻璃基板1. . . glass substrate
2...保持具2. . . Holder
3...蒸鍍用容器3. . . Vapor deposition container
3a...蒸鍍室3a. . . Evaporation chamber
3b...底壁部3b. . . Bottom wall
4(4A、4B)...蒸發裝置4 (4A, 4B). . . Evaporation device
5...材料輸送管5. . . Material delivery tube
5a...上端部5a. . . Upper end
5b、5c...分岐下端部5b, 5c. . . Dividing the lower end
11...蒸發用容器11. . . Evaporation container
11a...蒸發室11a. . . Evaporation chamber
11c...上壁部11c. . . Upper wall
11b...搬出入用開口部11b. . . Moving in and out
12...真空泵浦12. . . Vacuum pump
13...昇降用汽缸裝置13. . . Lifting cylinder device
14...材枓收納容器14. . . Material storage container
15...載置台15. . . Mounting table
15a...環狀抵接部15a. . . Annular abutment
15b...環狀突出部15b. . . Annular projection
16...開閉用門板16. . . Opening and closing door panel
17...材料放出孔17. . . Material discharge hole
18...針閥18. . . Needle valve
19...艙壁構件19. . . Bulkhead member
20、23...加熱裝置20, 23. . . heating equipment
A...蒸鍍材料A. . . Evaporating material
B...蒸發材料B. . . Evaporation material
Claims (3)
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JP2004189282A JP4570403B2 (en) | 2004-06-28 | 2004-06-28 | Evaporation apparatus, vapor deposition apparatus, and method for switching evaporation apparatus in vapor deposition apparatus |
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TWI398535B true TWI398535B (en) | 2013-06-11 |
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JP (1) | JP4570403B2 (en) |
KR (1) | KR101175165B1 (en) |
CN (1) | CN100558929C (en) |
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WO (1) | WO2006001205A1 (en) |
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JP5036264B2 (en) * | 2006-09-19 | 2012-09-26 | 日立造船株式会社 | Vacuum deposition equipment |
TWI353389B (en) * | 2007-02-09 | 2011-12-01 | Au Optronics Corp | Evaporation coater and evaporation source replacem |
JP5153410B2 (en) * | 2008-03-31 | 2013-02-27 | Hoya株式会社 | Lens film forming method, vapor deposition apparatus, and lens manufacturing method |
US8741062B2 (en) * | 2008-04-22 | 2014-06-03 | Picosun Oy | Apparatus and methods for deposition reactors |
KR101084234B1 (en) | 2009-11-30 | 2011-11-16 | 삼성모바일디스플레이주식회사 | Deposition source, Deposition apparatus using the same and method for forming thin film |
DE102010017895A1 (en) * | 2010-04-21 | 2011-10-27 | Ald Vacuum Technologies Gmbh | Device for coating substrates according to the EB / PVD method |
JP5384770B2 (en) * | 2011-03-15 | 2014-01-08 | シャープ株式会社 | Vapor deposition particle injection apparatus and vapor deposition apparatus |
WO2013005781A1 (en) * | 2011-07-05 | 2013-01-10 | 東京エレクトロン株式会社 | Film formation device |
JP5405549B2 (en) * | 2011-10-20 | 2014-02-05 | 株式会社日本製鋼所 | Vacuum film forming method and vacuum film forming apparatus |
JP6021377B2 (en) * | 2012-03-28 | 2016-11-09 | 日立造船株式会社 | Vacuum deposition apparatus and crucible exchange method in vacuum deposition apparatus |
JP6222929B2 (en) * | 2013-01-15 | 2017-11-01 | 日立造船株式会社 | Vacuum deposition equipment |
CN105793464B (en) * | 2013-11-05 | 2018-01-02 | 塔塔钢铁荷兰科技有限责任公司 | For the method and apparatus for the composition for controlling the liquid metals in evaporator |
FR3018082B1 (en) * | 2014-03-03 | 2016-03-18 | Riber | METHOD FOR RECHARGING EVAPORATION CELL |
CN106062240B (en) * | 2014-03-11 | 2018-09-28 | 株式会社日本有机雷特显示器 | Evaporation coating device and the evaporation coating method of evaporation coating device and the manufacturing method of device are used |
FR3020381B1 (en) * | 2014-04-24 | 2017-09-29 | Riber | EVAPORATION CELL |
JP6302786B2 (en) * | 2014-08-01 | 2018-03-28 | シャープ株式会社 | Vapor deposition apparatus, vapor deposition method, and organic EL element manufacturing method |
JP6445959B2 (en) * | 2015-12-16 | 2018-12-26 | 株式会社オプトラン | Film forming apparatus and film forming method |
KR102561591B1 (en) * | 2018-07-02 | 2023-08-02 | 삼성디스플레이 주식회사 | Deposition apparatus and deposition method thereof |
CN109321884A (en) * | 2018-10-17 | 2019-02-12 | 武汉华星光电半导体显示技术有限公司 | Evaporation coating device |
EP3922762A4 (en) * | 2020-04-14 | 2022-01-05 | Meishan Boya Advanced Materials Co., Ltd. | Crystal growth method and device |
CN112553691A (en) * | 2020-12-02 | 2021-03-26 | 中电化合物半导体有限公司 | Silicon carbide crystal growth method and growth device |
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KR20070024519A (en) | 2007-03-02 |
CN100558929C (en) | 2009-11-11 |
TW200613575A (en) | 2006-05-01 |
JP4570403B2 (en) | 2010-10-27 |
WO2006001205A1 (en) | 2006-01-05 |
KR101175165B1 (en) | 2012-08-20 |
CN1950537A (en) | 2007-04-18 |
JP2006009107A (en) | 2006-01-12 |
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