TWI397188B - Radiation cutting method and combination method of solar cell - Google Patents

Radiation cutting method and combination method of solar cell Download PDF

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TWI397188B
TWI397188B TW098123419A TW98123419A TWI397188B TW I397188 B TWI397188 B TW I397188B TW 098123419 A TW098123419 A TW 098123419A TW 98123419 A TW98123419 A TW 98123419A TW I397188 B TWI397188 B TW I397188B
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solar cell
layer
cell unit
selenide
conductive film
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TW201103160A (en
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Feng Chien Hsieh
Gwo Sen Lin
Chien Pang Yang
Bing Yi Hou
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Nexpower Technology Corp
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Description

太陽能電池雷射切割方法及組合方法
本發明係有關太陽能電池雷射切割方法及組合方法，尤其是該太陽能組合方法組合成的太陽能電池組合裝置可雙面吸光，因而可增加輸出效率。
太陽能電池又稱太陽能晶片或光電池，是一種利用太陽光直接發電的光電半導體，利用光電轉換可輸出電壓及電流。太陽電池發電亦是一種可再生的環保發電方式，發電過程中不會產生二氧化碳等溫室氣體，不會對環境造成污染。按照製作材料分為矽基半導體電池、薄膜電池、染料敏電池、有機材料電池等。
參閱第1圖，習知太陽能電池結構示意圖，其中該習知太陽能電池1包括一鉬背電極層42、一吸收層58、一緩衝層56、一i-ZnO層54以及一透明導電薄膜52，該鉬背電極層42、吸收層58、緩衝層56、i-ZnO層54以及透明導電薄膜52係依序由下往上堆疊。
然而習知技術中太陽能電池僅能由單邊吸收光線，使得太陽能電池所能產生的輸出功率有限，因而需要較多個太陽能電池所才能達到較好的輸出功率，因此製作成本相對提高。
本發明之主要目的在提供一種太陽能電池雷射切割方法，係在形成包含第一基板、第一透明導電薄膜、第一本質(intrinsic)型氧化鋅(i-ZnO)層、第一緩衝層、第一吸收層、第一鉬背電極層以及絕緣層等結構層的太陽能電池的同時，形成貫穿不同結構層的雷射切割圖案。
本發明之另一目的在提供一種太陽能電池組合方法，係將該頂部太陽能電池單元與該底部太陽能電池單元壓合形成一太陽能電池組合裝置，其中包括第一種組合方法係將該頂部太陽能電池單元之正極與該底部太陽能電池單元之負極於相同邊相對應，該頂部太陽能電池單元之負極與該底部太陽能電池單元之正極於相同邊相對應後進行壓合，第二種組合方法係將該頂部太陽能電池單元之正極與該底部太陽能電池單元之正極於相同邊相對應，該頂部太陽能電池單元之負極與該底部太陽能電池單元之負極於相同邊相對應後進行壓合，以及第三種組合方法係於該底部太陽能電池單元之正極的絕緣層之一部分雷射切割出一缺口，並於該缺口填補一鉬金屬材料，再將該底部太陽能電池單元之正極串聯頂部太陽能電池單元之負極後進行壓合。
本發明之太陽能電池組合方法可將頂部太陽能電池單元與該底部太陽能電池單元壓合成一太陽能電池組合裝置，該太陽能電池組合裝置可利用底部太陽能電池單元的第一吸收層來吸收室內的光線以及該頂部太陽能電池單元的第二吸收層來吸收室外的光線，使得該太陽能電池組合裝置擁有優於一般太陽能電池的輸出效率以及功率密度，進而可使製作太陽能電池的整體成本降低。
以下配合圖式及元件符號對本發明之實施方式做更詳細的說明，俾使熟習該項技藝者在研讀本說明書後能據以實施。
參閱第2A圖至2F圖，本發明第一實施例之太陽能電池雷射切割方法的施行步驟示意圖。如第2A圖所示，在覆蓋於一第一基板上10的一第一透明導電薄膜12上雷射切割出一第一切割圖案BP1。如第2B圖所示，於該第一透明導電薄膜12以及該第一切割圖案BP1上依序覆蓋一第一本質(intrinsic)型氧化鋅(i-ZnO)層14、一第一緩衝層16以及一第一吸收層18。
接著，雷射切割出一第二切割圖案BP2，該第二切割圖案BP2係貫穿該第一吸收層18、該第一緩衝層16以及該第一i-ZnO層14，如第2C圖所示。並於該第一吸收層18以及該第二切割圖案BP2上覆蓋一第一鉬背電極層20，如第2D圖所示。
於該第一鉬背電極層20上雷射切割出一第三切割圖案BP3，如第2E圖所示，該第三切割圖案BP3係貫穿該第一鉬背電極層20，並暴露出該第一吸收層18之一部分。並於該第一鉬背電極層20以及該第三切割圖案BP3上覆蓋一絕緣層21，如第2F圖所示，藉以形成一底部太陽能電池單元。
要注意的是，第三切割圖案BP3亦可如第2G圖所示，該第三切割圖案BP3係貫穿該第一鉬背電極層20以及該第一吸收層18，並暴露出該第一緩衝層16之一部分。並於該第一鉬背電極層20以及該第三切割圖案BP3上覆蓋一絕緣層21，如第2H圖所示，藉以形成一底部太陽能電池單元。
第一實施例中的第一吸收層為一I-III-VI族化合物，該I-III-VI族化合物包括銅銦鎵硒(CIGS)、銅鎵硒(CGS)、銅銦硒(CIS)、銀銦鎵硒(AIGS)的其中之一，該第一緩衝層包括二硒化銦(InSe2)、硫化鎘(CdS)以及硫化鋅(ZnS)的其中之一，以及該第一透明導電薄膜包括鋁氧化鋅(AZO)。
參閱第3A圖至3H圖，本發明第二實施例之太陽能電池雷射切割方法的施行步驟示意圖。如第3A圖所示，依序由下往上覆蓋一第一透明導電薄膜12以及一第一i-ZnO層14於一基板10上，再雷射切割出貫穿該第一透明導電薄膜12以及該第一i-ZnO層14的一第四切割圖案BP1’。覆蓋一第一緩衝層16以及一第一吸收層18於該第一i-ZnO層14以及該第四切割圖案上，如第3B圖所示。
接著，雷射切割出一第五切割圖案BP2’，該第五切割圖案BP2’係貫穿該第一吸收層18、該第一緩衝層16以及該第一i-ZnO層14，如第3C圖所示。並於該第一吸收層18以及第五切割圖案BP2’上覆蓋一第一鉬背電極層20，如第3D圖所示。如第3E圖所示，雷射切割出一第六切割圖案BP3’，該第六切割圖案BP3’係貫穿該第一鉬背電極層20，並暴露出該第一吸收層18之一部分。並於該第一鉬背電極層20以及該第六切割圖案BP3’上覆蓋一絕緣層21，如第3F圖所示，藉以形成一底部太陽能電池單元。
要注意的是，第六切割圖案BP3’亦可如第3G圖所示，該第六切割圖案BP3’係貫穿該第一鉬背電極層20以及該第一吸收層18，並暴露出該第一緩衝層16之一部分。並於該第一鉬背電極層20以及該第六切割圖案BP3’上覆蓋一絕緣層21，如第3H圖所示，藉以形成一底部太陽能電池單元。
第二實施例中的第一吸收層為一I-III-VI族化合物，該I-III-VI族化合物包括銅銦鎵硒、銅銦硒、銅鎵硒、銀銦鎵硒的其中之一，該第一緩衝層包括二硒化銦、硫化鎘以及硫化鋅的其中之一，以及該第一透明導電薄膜包括鋁氧化鋅。
參閱第4圖，本發明第三實施例之太陽能電池組合方法的示意圖，其中係利用一頂部太陽能電池單元以及底部太陽能電池單元組合成一太陽能電池組合裝置，該底部太陽能電池單元係如第一實施例或第二實施例所示之底部太陽能電池單元，要注意的是本實施例中係利用第二實施例的底部太陽能電池單元來做詳細說明。
該頂部太陽能電池單元係包括依序由下往上堆疊的一第二鉬背電極層22、一第二吸收層38、一第二緩衝層36、一第二i-ZnO層34以及一第二透明導電薄膜32。
本發明之太陽能電池組合方法為於該底部太陽能電池單元的絕緣層21之一部分雷射切割出一缺口A，如第4圖所示，並於該缺口A填補一鉬金屬材料，用以連接該第一鉬背電極層20，再將該頂部太陽能電池單元與該底部太陽能電池單元壓合成一體，且該頂部太陽能電池單元係位於該底部太陽能電池單元之上，其中該頂部太陽能電池單元之負極係與該底部太陽能電池單元之正極相接合串聯，且該缺口A係位於該頂部太陽能電池單元之負極係以及該底部太陽能電池單元之正極，填補於該缺口A的鉬金屬材料係用以導通串聯該頂部太陽能電池單元以及該底部太陽能電池單元。
參閱第5圖，本發明第四實施例之太陽能電池組合方法的示意圖，用於組合一太陽能電池組合裝置，其中該太陽能電池組合裝置中的頂部太陽能電池單元以及底部太陽能電池單元之結構均與第三實施例相同，而該太陽能電池組合方法為將該頂部太陽能電池單元與該底部太陽能電池單元壓合成一體，該頂部太陽能電池單元係位於該底部太陽能電池單元之上，其中該頂部太陽能電池單元之正極與該底部太陽能電池單元之負極於相同邊相對應，該頂部太陽能電池單元之負極與該底部太陽能電池單元之正極於相同邊相對應。
參閱第6圖，本發明第五實施例之太陽能電池組合方法的示意圖，用於組合一太陽能電池組合裝置，其中該太陽能電池組合方法中除了該頂部太陽能電池單元之正極與該底部太陽能電池單元之正極於相同邊相對應，該頂部太陽能電池單元之負極與該底部太陽能電池單元之負極於相同邊相對應不同於第四實施例之外，其他均與第四實施例相同。
第三實施例、第四實施例以及第五實施例中的第二吸收層均為一I-III-VI族化合物，該I-III-VI族化合物包括銅銦鎵硒、銅銦硒、銅鎵硒、銀銦鎵硒的其中之一，第二緩衝層均包括二硒化銦、硫化鎘以及硫化鋅的其中之一，以及第二透明導電薄膜包括鋁氧化鋅。
10．．．第一基板
12．．．第一透明導電薄膜
14．．．第一本質(intrinsic)型氧化鋅(i-ZnO)層
16．．．第一緩衝層
18．．．第一吸收層
20．．．第一鉬背電極層
21．．．絕緣層
22．．．第二鉬背電極層
32．．．第二透明導電薄膜
34．．．第二i-ZnO層
36．．．第二緩衝層
38．．．第二吸收層
42．．．鉬背電極層
52．．．透明導電薄膜
54．．．i-ZnO層
56．．．緩衝層
58．．．吸收層
BP1．．．第一切割圖案
BP2．．．第二切割圖案
BP3．．．第三切割圖案
BP1’．．．第四切割圖案
BP2’．．．第五切割圖案
BP3’．．．第六切割圖案
A．．．缺口
第1圖為習知太陽能電池結構示意圖。
第2A圖至2H圖為本發明第一實施例之太陽能電池雷射切割方法施行步驟示意圖。
第3A圖至3H圖為本發明第二實施例之太陽能電池雷射切割方法施行步驟示意圖。
第4圖為本發明之第三實施例之太陽能電池組合方法示意圖。
第5圖為本發明之第四實施例之太陽能電池組合方法示意圖。
第6圖為本發明之第五實施例之太陽能電池組合方法示意圖。
10．．．第一基板
12．．．第一透明導電薄膜
14．．．第一本質(intrinsic)型氧化鋅(i-ZnO)層
16．．．第一緩衝層
18．．．第一吸收層
20．．．第一鉬背電極層
21．．．絕緣層
22．．．第二鉬背電極層
32．．．第二透明導電薄膜
34．．．第二i-ZnO層
36．．．第二緩衝層
38．．．第二吸收層
A．．．缺口

Claims (17)

  1. 一種太陽能電池雷射切割方法，包括：依序由下往上覆蓋一第一透明導電薄膜以及一第一i-ZnO層於一基板上，再雷射切割出貫穿該第一透明導電薄膜以及該第一i-ZnO層的一第四切割圖案，並覆蓋一第一緩衝層以及一第一吸收層於該第一i-ZnO層以及該第四切割圖案上；由該第一吸收層貫穿該第一緩衝層以及該第一i-ZnO層雷射切割出一第五切割圖案，並於該第一吸收層以及第五切割圖案上覆蓋一第一鉬背電極層；以及於該第一鉬背電極層上雷射切割出一第六切割圖案，並於該第一鉬背電極層以及該第六切割圖案上覆蓋一絕緣層，藉以形成一底部太陽能電池單元，其中該第六切割圖案係貫穿該第一鉬背電極層，並暴露出該第一吸收層之一部分。
  2. 依據申請專利範圍第1項所述之太陽能電池雷射切割方法，其中該第一吸收層為一I-III-VI族化合物，該I-III-VI族化合物包括銅銦鎵硒(CIGS)、銅鎵硒(CGS)、銅銦硒(CIS)以及銀銦鎵硒(AIGS)的其中之一。
  3. 依據申請專利範圍第1項所述之太陽能電池雷射切割方法，其中該第一緩衝層包括二硒化銦、硫化鎘以及硫化鋅的其中之一。
  4. 依據申請專利範圍第1項所述之太陽能電池之雷射切割方法，其中該第一透明導電薄膜包括鋁氧化鋅。
  5. 依據申請專利範圍第1項所述之太陽能電池之雷射切割方法，其中該第六切割圖案係貫穿該第一鉬背電極層以及該第一吸收層，並暴露出該第一緩衝層之一部分。
  6. 一種太陽能電池組合方法，用以組合一頂部太陽能電池單元以 及如申請專利範圍第1項之底部太陽能電池單元，藉以形成一太陽能電池組合裝置，其中該頂部太陽能電池單元係包括依序由下往上堆疊的一第二鉬背電極層、一第二吸收層、一第二緩衝層、一第二i-ZnO層以及一第二透明導電薄膜，該太陽能電池之組合方法包括：於該底部太陽能電池單元的絕緣層之一部分雷射切割出一缺口，並於該缺口填補一鉬金屬材料，用以連接該第一鉬背電極層；以及將該頂部太陽能電池單元與該底部太陽能電池單元壓合成一體，該頂部太陽能電池單元係位於該底部太陽能電池單元之上，其中該頂部太陽能電池單元之一負極係與該底部太陽能電池單元之一正極相接合，且該缺口係位於該頂部太陽能電池單元之負極以及該底部太陽能電池單元之正極，填補於該缺口的鉬金屬材料係用以導通該頂部太陽能電池單元以及該底部太陽能電池單元。
  7. 依據申請專利範圍第6項所述之太陽能電池組合方法，其中該第二吸收層為一I-III-VI族化合物，該I-III-VI族化合物包括銅銦鎵硒、銅銦硒、銅鎵硒以及銀銦鎵硒的其中之一。
  8. 依據申請專利範圍第6項所述之太陽能電池組合方法，其中該第二緩衝層包括二硒化銦、硫化鎘以及硫化鋅的其中之一。
  9. 依據申請專利範圍第6項所述之太陽能電池組合方法，其中該第二透明導電薄膜包括鋁氧化鋅。
  10. 一種太陽能電池組合方法，用以組合一頂部太陽能電池單元以及如申請專利範圍第1項之底部太陽能電池單元，藉以形成一太陽能電池組合裝置，其中該頂部太陽能電池單元係包括依序由下往上堆疊的一第二鉬背電極層、一第二吸收層、一第二緩 衝層、一第二i-ZnO層以及一第二透明導電薄膜，該太陽能電池組合方法包括：將該頂部太陽能電池單元與該底部太陽能電池單元壓合成一體，該頂部太陽能電池單元係位於該底部太陽能電池單元之上，其中該頂部太陽能電池單元之正極係與該底部太陽能電池單元之負極相對應，該頂部太陽能電池單元之負極係與該底部太陽能電池單元之正極相對應。
  11. 依據申請專利範圍第10項所述之太陽能電池組合方法，其中該第二吸收層為一I-III-VI族化合物，該I-III-VI族化合物包括銅銦鎵硒、銅銦硒、銅鎵硒以及銀銦鎵硒的其中之一。
  12. 依據申請專利範圍第10項所述之太陽能電池組合方法，其中該第二緩衝層包括二硒化銦、硫化鎘以及硫化鋅的其中之一。
  13. 依據申請專利範圍第10項所述之太陽能電池組合方法，其中該第二透明導電薄膜包括鋁氧化鋅。
  14. 一種太陽能電池組合方法，用以組合一頂部太陽能電池單元以及如申請專利範圍第1項之底部太陽能電池單元，藉以形成一太陽能電池組合裝置，其中該頂部太陽能電池單元係包括依序由下往上堆疊的一第二鉬背電極層、一第二吸收層、一第二緩衝層、一第二i-ZnO層以及一第二透明導電薄膜，該太陽能電池組合方法包括：將該頂部太陽能電池單元與該底部太陽能電池單元壓合成一體，該頂部太陽能電池單元係位於該底部太陽能電池單元之上，其中該頂部太陽能電池單元之正極係與該底部太陽能電池單元之正極相對應，該頂部太陽能電池單元之負極係與該底部太陽能電池單元之負極相對應。
  15. 依據申請專利範圍第14項所述之太陽能電池組合方法，其中 該第二吸收層為一I-III-VI族化合物，該I-III-VI族化合物包括銅銦鎵硒、銅銦硒、銅鎵硒以及銀銦鎵硒的其中之一。
  16. 依據申請專利範圍第14項所述之太陽能電池組合方法，其中該第二緩衝層包括二硒化銦、硫化鎘以及硫化鋅的其中之一。
  17. 依據申請專利範圍第14項所述之太陽能電池組合方法，其中該第二透明導電薄膜包括鋁氧化鋅。
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