TWI397172B - 影像感測器及其製造方法 - Google Patents
影像感測器及其製造方法 Download PDFInfo
- Publication number
- TWI397172B TWI397172B TW097128012A TW97128012A TWI397172B TW I397172 B TWI397172 B TW I397172B TW 097128012 A TW097128012 A TW 097128012A TW 97128012 A TW97128012 A TW 97128012A TW I397172 B TWI397172 B TW I397172B
- Authority
- TW
- Taiwan
- Prior art keywords
- doped region
- photodiode
- conductivity type
- image sensor
- gate electrode
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title description 11
- 238000000034 method Methods 0.000 claims description 46
- 238000005468 ion implantation Methods 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 20
- 230000008569 process Effects 0.000 claims description 19
- 238000012546 transfer Methods 0.000 claims description 17
- 125000006850 spacer group Chemical group 0.000 claims description 12
- 238000009792 diffusion process Methods 0.000 claims description 10
- 238000007667 floating Methods 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000002019 doping agent Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 42
- 238000012545 processing Methods 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 6
- 238000006731 degradation reaction Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 238000005421 electrostatic potential Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 230000004044 response Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000001444 catalytic combustion detection Methods 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical class [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/807—Pixel isolation structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020070074105A KR101019279B1 (ko) | 2007-07-24 | 2007-07-24 | 이미지 센서 및 그 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200924181A TW200924181A (en) | 2009-06-01 |
| TWI397172B true TWI397172B (zh) | 2013-05-21 |
Family
ID=40294480
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097128012A TWI397172B (zh) | 2007-07-24 | 2008-07-23 | 影像感測器及其製造方法 |
| TW101146681A TWI470779B (zh) | 2007-07-24 | 2008-07-23 | 影像感測器及其製造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101146681A TWI470779B (zh) | 2007-07-24 | 2008-07-23 | 影像感測器及其製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US7999252B2 (https=) |
| JP (2) | JP5329142B2 (https=) |
| KR (1) | KR101019279B1 (https=) |
| TW (2) | TWI397172B (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101543664B1 (ko) * | 2008-12-08 | 2015-08-12 | 삼성전자주식회사 | 픽셀 어레이 및 이를 포함하는 입체 영상 센서 |
| KR102009931B1 (ko) * | 2012-07-06 | 2019-08-13 | 에스케이하이닉스 주식회사 | 씨모스 이미지센서 및 그 제조 방법 |
| US9665604B2 (en) * | 2012-07-31 | 2017-05-30 | Schlumberger Technology Corporation | Modeling and manipulation of seismic reference datum (SRD) in a collaborative petro-technical application environment |
| TWI538175B (zh) * | 2013-12-24 | 2016-06-11 | 光引研創股份有限公司 | 以慢光增強吸收之鍺光偵測器 |
| US10918650B2 (en) | 2016-06-02 | 2021-02-16 | University Of South Florida | Method of treating melanoma using an inhibitor of an atypical protein kinase C |
| US11348955B2 (en) * | 2018-06-05 | 2022-05-31 | Brillnics Singapore Pte. Ltd. | Pixel structure for image sensors |
| WO2020012788A1 (ja) * | 2018-07-09 | 2020-01-16 | 株式会社 資生堂 | 情報処理装置、塗布物生成装置、及び、プログラム |
| CN109979955B (zh) * | 2019-04-03 | 2021-06-18 | 上海华力微电子有限公司 | 一种半导体结构及其制造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100677044B1 (ko) * | 2001-06-26 | 2007-01-31 | 매그나칩 반도체 유한회사 | 이미지센서 제조 방법 |
| TW200715541A (en) * | 2005-08-24 | 2007-04-16 | Micron Technology Inc | CMOS imager with nitrided gate oxide and method of fabrication |
| TW200721522A (en) * | 2005-11-24 | 2007-06-01 | Samsung Electro Mech | Photodiode device and photodiode array for optical sensor using the same |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6489643B1 (en) | 1998-06-27 | 2002-12-03 | Hynix Semiconductor Inc. | Photodiode having a plurality of PN junctions and image sensor having the same |
| JP4419238B2 (ja) * | 1999-12-27 | 2010-02-24 | ソニー株式会社 | 固体撮像素子及びその製造方法 |
| KR20020020086A (ko) * | 2000-09-07 | 2002-03-14 | 박용 | 씨모스 이미지 센서 |
| KR20020022931A (ko) * | 2000-09-21 | 2002-03-28 | 박종섭 | 씨모스 이미지 센서의 포토다이오드 및 그의 제조방법 |
| JP4972838B2 (ja) * | 2001-09-12 | 2012-07-11 | ソニー株式会社 | 固体撮像素子及びその製造方法 |
| JP4882207B2 (ja) * | 2004-04-28 | 2012-02-22 | ソニー株式会社 | 固体撮像素子 |
| KR101069103B1 (ko) | 2004-07-29 | 2011-09-30 | 크로스텍 캐피탈, 엘엘씨 | 전하운송효율을 향상시키기 위한 이미지센서 및 제조 방법 |
| KR100660275B1 (ko) * | 2004-12-29 | 2006-12-20 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 화소의 전달 트랜지스터 및 그 제조방법 |
| JP4951898B2 (ja) * | 2005-08-26 | 2012-06-13 | ソニー株式会社 | 固体撮像素子、固体撮像素子の製造方法および固体撮像素子を用いた画像撮影装置 |
-
2007
- 2007-07-24 KR KR1020070074105A patent/KR101019279B1/ko active Active
-
2008
- 2008-07-23 TW TW097128012A patent/TWI397172B/zh active
- 2008-07-23 US US12/219,499 patent/US7999252B2/en active Active
- 2008-07-23 TW TW101146681A patent/TWI470779B/zh active
- 2008-07-23 JP JP2008190041A patent/JP5329142B2/ja active Active
-
2011
- 2011-07-29 US US13/194,142 patent/US8828775B2/en active Active
-
2012
- 2012-11-15 JP JP2012251178A patent/JP2013042178A/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100677044B1 (ko) * | 2001-06-26 | 2007-01-31 | 매그나칩 반도체 유한회사 | 이미지센서 제조 방법 |
| TW200715541A (en) * | 2005-08-24 | 2007-04-16 | Micron Technology Inc | CMOS imager with nitrided gate oxide and method of fabrication |
| TW200721522A (en) * | 2005-11-24 | 2007-06-01 | Samsung Electro Mech | Photodiode device and photodiode array for optical sensor using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009033167A (ja) | 2009-02-12 |
| TW201320319A (zh) | 2013-05-16 |
| US8828775B2 (en) | 2014-09-09 |
| US7999252B2 (en) | 2011-08-16 |
| TW200924181A (en) | 2009-06-01 |
| KR101019279B1 (ko) | 2011-03-07 |
| TWI470779B (zh) | 2015-01-21 |
| US20120028394A1 (en) | 2012-02-02 |
| JP5329142B2 (ja) | 2013-10-30 |
| JP2013042178A (ja) | 2013-02-28 |
| US20090026510A1 (en) | 2009-01-29 |
| KR20090010747A (ko) | 2009-01-30 |
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