TWI396730B - 用於化學機械研磨之選擇性阻障層漿液 - Google Patents
用於化學機械研磨之選擇性阻障層漿液 Download PDFInfo
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- TWI396730B TWI396730B TW094133466A TW94133466A TWI396730B TW I396730 B TWI396730 B TW I396730B TW 094133466 A TW094133466 A TW 094133466A TW 94133466 A TW94133466 A TW 94133466A TW I396730 B TWI396730 B TW I396730B
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- Prior art keywords
- weight
- alkyl
- solution
- group
- sulfonate
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- 230000004888 barrier function Effects 0.000 title claims description 67
- 238000005498 polishing Methods 0.000 title claims description 20
- 239000002002 slurry Substances 0.000 title description 18
- 239000000126 substance Substances 0.000 title description 11
- 239000000203 mixture Substances 0.000 claims description 45
- 229910052751 metal Inorganic materials 0.000 claims description 40
- 239000002184 metal Substances 0.000 claims description 40
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 34
- -1 ferrous metal complex Chemical class 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 23
- 239000003945 anionic surfactant Substances 0.000 claims description 21
- 239000007800 oxidant agent Substances 0.000 claims description 19
- 239000003112 inhibitor Substances 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 15
- PNKUSGQVOMIXLU-UHFFFAOYSA-N Formamidine Chemical compound NC=N PNKUSGQVOMIXLU-UHFFFAOYSA-N 0.000 claims description 14
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 14
- 125000000217 alkyl group Chemical group 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 claims description 10
- 230000002378 acidificating effect Effects 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- 235000013162 Cocos nucifera Nutrition 0.000 claims description 9
- 244000060011 Cocos nucifera Species 0.000 claims description 9
- 239000008139 complexing agent Substances 0.000 claims description 9
- KWIUHFFTVRNATP-UHFFFAOYSA-N glycine betaine Chemical compound C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- XOAAWQZATWQOTB-UHFFFAOYSA-N taurine Chemical compound NCCS(O)(=O)=O XOAAWQZATWQOTB-UHFFFAOYSA-N 0.000 claims description 8
- 229910019142 PO4 Inorganic materials 0.000 claims description 7
- 150000008052 alkyl sulfonates Chemical class 0.000 claims description 7
- 239000003795 chemical substances by application Substances 0.000 claims description 7
- 150000002429 hydrazines Chemical class 0.000 claims description 7
- 229940104261 taurate Drugs 0.000 claims description 6
- ULUAUXLGCMPNKK-UHFFFAOYSA-N Sulfobutanedioic acid Chemical compound OC(=O)CC(C(O)=O)S(O)(=O)=O ULUAUXLGCMPNKK-UHFFFAOYSA-N 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 5
- 229960003237 betaine Drugs 0.000 claims description 5
- 125000003636 chemical group Chemical group 0.000 claims description 5
- YRIUSKIDOIARQF-UHFFFAOYSA-N dodecyl benzenesulfonate Chemical compound CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 YRIUSKIDOIARQF-UHFFFAOYSA-N 0.000 claims description 5
- 229930195712 glutamate Natural products 0.000 claims description 5
- MTNDZQHUAFNZQY-UHFFFAOYSA-N imidazoline Chemical compound C1CN=CN1 MTNDZQHUAFNZQY-UHFFFAOYSA-N 0.000 claims description 5
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 5
- 239000010452 phosphate Substances 0.000 claims description 5
- 229920002635 polyurethane Polymers 0.000 claims description 5
- 239000004814 polyurethane Substances 0.000 claims description 5
- QPSVFNQMURAADJ-UHFFFAOYSA-N 1,4-dicyclohexyloxy-1,4-dioxobutane-2-sulfonic acid Chemical compound C1CCCCC1OC(=O)C(S(=O)(=O)O)CC(=O)OC1CCCCC1 QPSVFNQMURAADJ-UHFFFAOYSA-N 0.000 claims description 4
- AVPHZAHGVBYDBS-UHFFFAOYSA-N 2-[2-(15-methylhexadecyl)-4,5-dihydroimidazol-1-yl]ethanol Chemical compound CC(C)CCCCCCCCCCCCCCC1=NCCN1CCO AVPHZAHGVBYDBS-UHFFFAOYSA-N 0.000 claims description 4
- WQPMYSHJKXVTME-UHFFFAOYSA-N 3-hydroxypropane-1-sulfonic acid Chemical compound OCCCS(O)(=O)=O WQPMYSHJKXVTME-UHFFFAOYSA-N 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 229940071161 dodecylbenzenesulfonate Drugs 0.000 claims description 4
- 150000003839 salts Chemical class 0.000 claims description 4
- FFJCNSLCJOQHKM-CLFAGFIQSA-N (z)-1-[(z)-octadec-9-enoxy]octadec-9-ene Chemical compound CCCCCCCC\C=C/CCCCCCCCOCCCCCCCC\C=C/CCCCCCCC FFJCNSLCJOQHKM-CLFAGFIQSA-N 0.000 claims description 3
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 claims description 3
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 3
- 150000007942 carboxylates Chemical class 0.000 claims description 3
- 239000004711 α-olefin Substances 0.000 claims description 3
- HWJHLQSSWFHRQU-UHFFFAOYSA-N 1,4-didecoxy-1,4-dioxobutane-2-sulfonic acid Chemical compound CCCCCCCCCCOC(=O)CC(S(O)(=O)=O)C(=O)OCCCCCCCCCC HWJHLQSSWFHRQU-UHFFFAOYSA-N 0.000 claims description 2
- 229940070761 c14-16 olefin sulfonate Drugs 0.000 claims description 2
- 229940071088 methyl cocoyl taurate Drugs 0.000 claims description 2
- 150000003871 sulfonates Chemical class 0.000 claims description 2
- 239000003760 tallow Substances 0.000 claims description 2
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 claims 2
- 150000004056 anthraquinones Chemical class 0.000 claims 2
- 238000009530 blood pressure measurement Methods 0.000 claims 1
- 150000004714 phosphonium salts Chemical class 0.000 claims 1
- 229960003080 taurine Drugs 0.000 claims 1
- 239000004094 surface-active agent Substances 0.000 description 21
- 235000012431 wafers Nutrition 0.000 description 18
- 230000003628 erosive effect Effects 0.000 description 16
- 229910052715 tantalum Inorganic materials 0.000 description 16
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 16
- 238000000227 grinding Methods 0.000 description 15
- 125000001424 substituent group Chemical group 0.000 description 15
- 239000002245 particle Substances 0.000 description 14
- 239000011734 sodium Substances 0.000 description 14
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 12
- 150000002466 imines Chemical class 0.000 description 12
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 229910052708 sodium Inorganic materials 0.000 description 10
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 9
- 229910000420 cerium oxide Inorganic materials 0.000 description 9
- 230000001590 oxidative effect Effects 0.000 description 9
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 9
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 7
- PJJJBBJSCAKJQF-UHFFFAOYSA-N guanidinium chloride Chemical compound [Cl-].NC(N)=[NH2+] PJJJBBJSCAKJQF-UHFFFAOYSA-N 0.000 description 7
- 229910052758 niobium Inorganic materials 0.000 description 7
- 239000010955 niobium Substances 0.000 description 7
- OQLZINXFSUDMHM-UHFFFAOYSA-N Acetamidine Chemical compound CC(N)=N OQLZINXFSUDMHM-UHFFFAOYSA-N 0.000 description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- 239000012964 benzotriazole Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- VMGAPWLDMVPYIA-HIDZBRGKSA-N n'-amino-n-iminomethanimidamide Chemical compound N\N=C\N=N VMGAPWLDMVPYIA-HIDZBRGKSA-N 0.000 description 6
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 6
- 239000004475 Arginine Substances 0.000 description 5
- 239000003082 abrasive agent Substances 0.000 description 5
- ODKSFYDXXFIFQN-UHFFFAOYSA-N arginine Natural products OC(=O)C(N)CCCNC(N)=N ODKSFYDXXFIFQN-UHFFFAOYSA-N 0.000 description 5
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 5
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 5
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 5
- 229960004198 guanidine Drugs 0.000 description 5
- 150000002430 hydrocarbons Chemical class 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- BOLDJAUMGUJJKM-LSDHHAIUSA-N renifolin D Natural products CC(=C)[C@@H]1Cc2c(O)c(O)ccc2[C@H]1CC(=O)c3ccc(O)cc3O BOLDJAUMGUJJKM-LSDHHAIUSA-N 0.000 description 5
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 4
- ODKSFYDXXFIFQN-BYPYZUCNSA-P L-argininium(2+) Chemical compound NC(=[NH2+])NCCC[C@H]([NH3+])C(O)=O ODKSFYDXXFIFQN-BYPYZUCNSA-P 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 230000002401 inhibitory effect Effects 0.000 description 4
- 230000005764 inhibitory process Effects 0.000 description 4
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 4
- 238000003801 milling Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 235000021317 phosphate Nutrition 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- UELAIMNOXLAYRW-UHFFFAOYSA-M sodium;1,4-dicyclohexyloxy-1,4-dioxobutane-2-sulfonate Chemical compound [Na+].C1CCCCC1OC(=O)C(S(=O)(=O)[O-])CC(=O)OC1CCCCC1 UELAIMNOXLAYRW-UHFFFAOYSA-M 0.000 description 4
- PZBWSZNIZHNZKJ-UHFFFAOYSA-M sodium;4-decoxy-4-oxo-2-sulfobutanoate Chemical compound [Na+].CCCCCCCCCCOC(=O)CC(C(O)=O)S([O-])(=O)=O PZBWSZNIZHNZKJ-UHFFFAOYSA-M 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 230000002209 hydrophobic effect Effects 0.000 description 3
- 125000001165 hydrophobic group Chemical group 0.000 description 3
- 229910052809 inorganic oxide Inorganic materials 0.000 description 3
- 150000001247 metal acetylides Chemical class 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000036961 partial effect Effects 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 229940104256 sodium taurate Drugs 0.000 description 3
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 2
- OVSKIKFHRZPJSS-UHFFFAOYSA-N 2,4-D Chemical compound OC(=O)COC1=CC=C(Cl)C=C1Cl OVSKIKFHRZPJSS-UHFFFAOYSA-N 0.000 description 2
- WHBMMWSBFZVSSR-UHFFFAOYSA-N 3-hydroxybutyric acid Chemical compound CC(O)CC(O)=O WHBMMWSBFZVSSR-UHFFFAOYSA-N 0.000 description 2
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- YFHNDHXQDJQEEE-UHFFFAOYSA-N acetic acid;hydrazine Chemical compound NN.CC(O)=O YFHNDHXQDJQEEE-UHFFFAOYSA-N 0.000 description 2
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 2
- BIVUUOPIAYRCAP-UHFFFAOYSA-N aminoazanium;chloride Chemical compound Cl.NN BIVUUOPIAYRCAP-UHFFFAOYSA-N 0.000 description 2
- RAESLDWEUUSRLO-UHFFFAOYSA-O aminoazanium;nitrate Chemical compound [NH3+]N.[O-][N+]([O-])=O RAESLDWEUUSRLO-UHFFFAOYSA-O 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 150000001454 anthracenes Chemical class 0.000 description 2
- 150000001483 arginine derivatives Chemical class 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 125000000751 azo group Chemical group [*]N=N[*] 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- PTYMQUSHTAONGW-UHFFFAOYSA-N carbonic acid;hydrazine Chemical compound NN.OC(O)=O PTYMQUSHTAONGW-UHFFFAOYSA-N 0.000 description 2
- 238000005256 carbonitriding Methods 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 125000004093 cyano group Chemical group *C#N 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 2
- 229960000789 guanidine hydrochloride Drugs 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 125000001183 hydrocarbyl group Chemical group 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Chemical compound Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 description 2
- ICIWUVCWSCSTAQ-UHFFFAOYSA-M iodate Chemical compound [O-]I(=O)=O ICIWUVCWSCSTAQ-UHFFFAOYSA-M 0.000 description 2
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 2
- 239000004310 lactic acid Substances 0.000 description 2
- 235000014655 lactic acid Nutrition 0.000 description 2
- 239000001630 malic acid Substances 0.000 description 2
- 235000011090 malic acid Nutrition 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 150000002907 osmium Chemical class 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- LLYCMZGLHLKPPU-UHFFFAOYSA-M perbromate Chemical compound [O-]Br(=O)(=O)=O LLYCMZGLHLKPPU-UHFFFAOYSA-M 0.000 description 2
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 2
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
- GWLWWNLFFNJPDP-UHFFFAOYSA-M sodium;2-aminoethanesulfonate Chemical compound [Na+].NCCS([O-])(=O)=O GWLWWNLFFNJPDP-UHFFFAOYSA-M 0.000 description 2
- KKVTYAVXTDIPAP-UHFFFAOYSA-M sodium;methanesulfonate Chemical compound [Na+].CS([O-])(=O)=O KKVTYAVXTDIPAP-UHFFFAOYSA-M 0.000 description 2
- 159000000008 strontium salts Chemical class 0.000 description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 125000004149 thio group Chemical group *S* 0.000 description 2
- CWERGRDVMFNCDR-UHFFFAOYSA-N thioglycolic acid Chemical compound OC(=O)CS CWERGRDVMFNCDR-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- DHBZRQXIRAEMRO-UHFFFAOYSA-N 1,1,2,2-tetramethylhydrazine Chemical compound CN(C)N(C)C DHBZRQXIRAEMRO-UHFFFAOYSA-N 0.000 description 1
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 description 1
- VZXTWGWHSMCWGA-UHFFFAOYSA-N 1,3,5-triazine-2,4-diamine Chemical group NC1=NC=NC(N)=N1 VZXTWGWHSMCWGA-UHFFFAOYSA-N 0.000 description 1
- AJNMWKAMLXOVJV-UHFFFAOYSA-N 1,4-dicyclohexyloxy-1,4-dioxobutane-2-sulfonic acid;sodium Chemical compound [Na].C1CCCCC1OC(=O)C(S(=O)(=O)O)CC(=O)OC1CCCCC1 AJNMWKAMLXOVJV-UHFFFAOYSA-N 0.000 description 1
- TUSDEZXZIZRFGC-UHFFFAOYSA-N 1-O-galloyl-3,6-(R)-HHDP-beta-D-glucose Natural products OC1C(O2)COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC1C(O)C2OC(=O)C1=CC(O)=C(O)C(O)=C1 TUSDEZXZIZRFGC-UHFFFAOYSA-N 0.000 description 1
- SDNGVFXIFVLBAJ-UHFFFAOYSA-N 1-methyl-3-nitroindole Chemical compound C1=CC=C2N(C)C=C([N+]([O-])=O)C2=C1 SDNGVFXIFVLBAJ-UHFFFAOYSA-N 0.000 description 1
- TYTGWHZODQKWEF-UHFFFAOYSA-N 1-o-dodecyl 4-o-sulfo butanedioate Chemical compound CCCCCCCCCCCCOC(=O)CCC(=O)OS(O)(=O)=O TYTGWHZODQKWEF-UHFFFAOYSA-N 0.000 description 1
- FNHMJTUQUPQWJN-UHFFFAOYSA-N 2,2-dimethylpropanimidamide Chemical compound CC(C)(C)C(N)=N FNHMJTUQUPQWJN-UHFFFAOYSA-N 0.000 description 1
- JOELYYRJYYLNRR-UHFFFAOYSA-N 2,3,5-trihydroxybenzoic acid Chemical compound OC(=O)C1=CC(O)=CC(O)=C1O JOELYYRJYYLNRR-UHFFFAOYSA-N 0.000 description 1
- GLDQAMYCGOIJDV-UHFFFAOYSA-N 2,3-dihydroxybenzoic acid Chemical compound OC(=O)C1=CC=CC(O)=C1O GLDQAMYCGOIJDV-UHFFFAOYSA-N 0.000 description 1
- FUSNOPLQVRUIIM-UHFFFAOYSA-N 4-amino-2-(4,4-dimethyl-2-oxoimidazolidin-1-yl)-n-[3-(trifluoromethyl)phenyl]pyrimidine-5-carboxamide Chemical compound O=C1NC(C)(C)CN1C(N=C1N)=NC=C1C(=O)NC1=CC=CC(C(F)(F)F)=C1 FUSNOPLQVRUIIM-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- UJTTUOLQLCQZEA-UHFFFAOYSA-N 9h-fluoren-9-ylmethyl n-(4-hydroxybutyl)carbamate Chemical compound C1=CC=C2C(COC(=O)NCCCCO)C3=CC=CC=C3C2=C1 UJTTUOLQLCQZEA-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 239000001263 FEMA 3042 Substances 0.000 description 1
- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 description 1
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- LRBQNJMCXXYXIU-PPKXGCFTSA-N Penta-digallate-beta-D-glucose Natural products OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-PPKXGCFTSA-N 0.000 description 1
- 229920000388 Polyphosphate Polymers 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 229910026551 ZrC Inorganic materials 0.000 description 1
- JXOOCQBAIRXOGG-UHFFFAOYSA-N [B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[Al] Chemical compound [B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[Al] JXOOCQBAIRXOGG-UHFFFAOYSA-N 0.000 description 1
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 description 1
- SPIDMIKLEMNARN-UHFFFAOYSA-N [Mn+6] Chemical class [Mn+6] SPIDMIKLEMNARN-UHFFFAOYSA-N 0.000 description 1
- XPOLVIIHTDKJRY-UHFFFAOYSA-N acetic acid;methanimidamide Chemical compound NC=N.CC(O)=O XPOLVIIHTDKJRY-UHFFFAOYSA-N 0.000 description 1
- OFLXLNCGODUUOT-UHFFFAOYSA-N acetohydrazide Chemical compound C\C(O)=N\N OFLXLNCGODUUOT-UHFFFAOYSA-N 0.000 description 1
- PFLUPZGCTVGDLV-UHFFFAOYSA-N acetone azine Chemical compound CC(C)=NN=C(C)C PFLUPZGCTVGDLV-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 235000004279 alanine Nutrition 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 235000003704 aspartic acid Nutrition 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- ZWXYEWJNBYQXLK-UHFFFAOYSA-N azanium;4-dodecoxy-4-oxo-3-sulfobutanoate Chemical compound [NH4+].CCCCCCCCCCCCOC(=O)C(S(O)(=O)=O)CC([O-])=O ZWXYEWJNBYQXLK-UHFFFAOYSA-N 0.000 description 1
- 125000003354 benzotriazolyl group Chemical group N1N=NC2=C1C=CC=C2* 0.000 description 1
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 description 1
- 230000003115 biocidal effect Effects 0.000 description 1
- 239000003139 biocide Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001621 bismuth Chemical class 0.000 description 1
- 238000005282 brightening Methods 0.000 description 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-M bromate Inorganic materials [O-]Br(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-M 0.000 description 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical compound OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- XEVRDFDBXJMZFG-UHFFFAOYSA-N carbonyl dihydrazine Chemical compound NNC(=O)NN XEVRDFDBXJMZFG-UHFFFAOYSA-N 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 150000001844 chromium Chemical class 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001868 cobalt Chemical class 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- DIOQZVSQGTUSAI-NJFSPNSNSA-N decane Chemical group CCCCCCCCC[14CH3] DIOQZVSQGTUSAI-NJFSPNSNSA-N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- LMBWSYZSUOEYSN-UHFFFAOYSA-N diethyldithiocarbamic acid Chemical compound CCN(CC)C(S)=S LMBWSYZSUOEYSN-UHFFFAOYSA-N 0.000 description 1
- QNKHVIRRKIYHNN-UHFFFAOYSA-L disodium methanesulfonate Chemical compound [Na+].[Na+].CS([O-])(=O)=O.CS([O-])(=O)=O QNKHVIRRKIYHNN-UHFFFAOYSA-L 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 229950004394 ditiocarb Drugs 0.000 description 1
- GVGUFUZHNYFZLC-UHFFFAOYSA-N dodecyl benzenesulfonate;sodium Chemical compound [Na].CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 GVGUFUZHNYFZLC-UHFFFAOYSA-N 0.000 description 1
- 230000032050 esterification Effects 0.000 description 1
- 238000005886 esterification reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- WCQOBLXWLRDEQA-UHFFFAOYSA-N ethanimidamide;hydrochloride Chemical compound Cl.CC(N)=N WCQOBLXWLRDEQA-UHFFFAOYSA-N 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 235000004515 gallic acid Nutrition 0.000 description 1
- 229940074391 gallic acid Drugs 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000000174 gluconic acid Substances 0.000 description 1
- 235000012208 gluconic acid Nutrition 0.000 description 1
- 235000013922 glutamic acid Nutrition 0.000 description 1
- 239000004220 glutamic acid Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000003906 humectant Substances 0.000 description 1
- ZGCHATBSUIJLRL-UHFFFAOYSA-N hydrazine sulfate Chemical compound NN.OS(O)(=O)=O ZGCHATBSUIJLRL-UHFFFAOYSA-N 0.000 description 1
- 239000012493 hydrazine sulfate Substances 0.000 description 1
- 229910000377 hydrazine sulfate Inorganic materials 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- QYRFJLLXPINATB-UHFFFAOYSA-N hydron;2,4,5,6-tetrafluorobenzene-1,3-diamine;dichloride Chemical compound Cl.Cl.NC1=C(F)C(N)=C(F)C(F)=C1F QYRFJLLXPINATB-UHFFFAOYSA-N 0.000 description 1
- DOUHZFSGSXMPIE-UHFFFAOYSA-N hydroxidooxidosulfur(.) Chemical compound [O]SO DOUHZFSGSXMPIE-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 150000002505 iron Chemical class 0.000 description 1
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 229940071180 lauryl sulfosuccinate Drugs 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910001629 magnesium chloride Inorganic materials 0.000 description 1
- MMIPFLVOWGHZQD-UHFFFAOYSA-N manganese(3+) Chemical class [Mn+3] MMIPFLVOWGHZQD-UHFFFAOYSA-N 0.000 description 1
- YZTQKMVBEGUONQ-UHFFFAOYSA-N manganese(4+) Chemical class [Mn+4] YZTQKMVBEGUONQ-UHFFFAOYSA-N 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- UNASZPQZIFZUSI-UHFFFAOYSA-N methylidyneniobium Chemical compound [Nb]#C UNASZPQZIFZUSI-UHFFFAOYSA-N 0.000 description 1
- POVXOWVFLAAVBH-UHFFFAOYSA-N n-formamidoformamide Chemical compound O=CNNC=O POVXOWVFLAAVBH-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- HLERILKGMXJNBU-UHFFFAOYSA-N norvaline betaine Chemical compound CCCC(C([O-])=O)[N+](C)(C)C HLERILKGMXJNBU-UHFFFAOYSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000010979 pH adjustment Methods 0.000 description 1
- 239000006179 pH buffering agent Substances 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000001205 polyphosphate Substances 0.000 description 1
- 235000011176 polyphosphates Nutrition 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229940031688 sodium c14-16 olefin sulfonate Drugs 0.000 description 1
- 229940080264 sodium dodecylbenzenesulfonate Drugs 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- HFQQZARZPUDIFP-UHFFFAOYSA-M sodium;2-dodecylbenzenesulfonate Chemical group [Na+].CCCCCCCCCCCCC1=CC=CC=C1S([O-])(=O)=O HFQQZARZPUDIFP-UHFFFAOYSA-M 0.000 description 1
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 1
- HSFQBFMEWSTNOW-UHFFFAOYSA-N sodium;carbanide Chemical group [CH3-].[Na+] HSFQBFMEWSTNOW-UHFFFAOYSA-N 0.000 description 1
- QKHBMQWPOUUMQZ-BDQAORGHSA-M sodium;hydron;(2s)-2-(octadecanoylamino)pentanedioate Chemical group [Na+].CCCCCCCCCCCCCCCCCC(=O)N[C@H](C(O)=O)CCC([O-])=O QKHBMQWPOUUMQZ-BDQAORGHSA-M 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 125000000547 substituted alkyl group Chemical group 0.000 description 1
- PXQLVRUNWNTZOS-UHFFFAOYSA-N sulfanyl Chemical class [SH] PXQLVRUNWNTZOS-UHFFFAOYSA-N 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 229910021653 sulphate ion Inorganic materials 0.000 description 1
- 230000000153 supplemental effect Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 235000015523 tannic acid Nutrition 0.000 description 1
- LRBQNJMCXXYXIU-NRMVVENXSA-N tannic acid Chemical compound OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-NRMVVENXSA-N 0.000 description 1
- 229940033123 tannic acid Drugs 0.000 description 1
- 229920002258 tannic acid Polymers 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- DPJRMOMPQZCRJU-UHFFFAOYSA-M thiamine hydrochloride Chemical group Cl.[Cl-].CC1=C(CCO)SC=[N+]1CC1=CN=C(C)N=C1N DPJRMOMPQZCRJU-UHFFFAOYSA-M 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
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Description
本發明係關於半導體晶圓的研磨,更詳而言之,係關於用於移除如在其他層出現的阻障材料之晶圓層的組成物及方法。
半導體基材通常具有矽基底和具有含多個在介電層內排列成線路互連線(circuit interconnect)圖案的溝槽之介電層。這些溝槽圖案不是具有金屬鑲嵌(damascence)結構就是具有雙金屬鑲嵌結構。此外,通常一層或如三層或更多之多層覆蓋層(capping layer)覆蓋溝槽圖案化介電層,而以阻障層覆蓋於該些覆蓋層上。最後,金屬層覆蓋於阻障層並填滿圖案化溝槽。金屬層形成連接介電層區域間之線路互連線而形成積體電路。
覆蓋層可提供不同目的。例如,覆蓋層,如碳氮化矽覆於介電層,可作為研磨停止層,以保護下方介電層在研磨時不被移除。碳氮化矽的氮濃度根據製造商而不同;且其可含有約50原子%的氮一如果氮含量為0,則停止層具有碳化矽的化學性質。此外,二氧化矽層、氮化矽層或此兩層的組合,可修正在停止層上的表面形貌(topography)。阻障層,如鉭或氮化鉭阻障層,通常覆於覆蓋層且金屬導電材料層覆蓋於阻障層上形成互連金屬線。
化學機械平坦化(chemical mechanical planarization)或CMP製程通常包括多個研磨步驟。例如,從下方阻障介電層移除金屬層以平坦化晶圓之初始平坦步驟。此第一步之研磨移除金屬層,同時在晶圓上留下具有填滿金屬之溝槽的平滑平坦表面,而在研磨過之表面上提供線路互連線。第一步研磨步驟傾向於以相對高速率移除過多之互聯金屬,諸如銅。第一步研磨之後,第二步研磨製程通常移除留在半導體基材上的阻障層。此第二步之研磨係將阻障層從其下方介電層移除,以在介電層上提供經研磨過之平坦表面。第二步之研磨可停止於覆蓋層、移除所有覆蓋層或移除一些下方介電層。
不幸地,CMP製程時常造成不期望之線路互聯線金屬之過度移除或「凹陷(dishing)」。此凹陷可從第一步研磨及第二步研磨兩者造成。超過可接受程度之凹陷會造成線路互聯線中的尺寸減少(dimensional loss)。這些線路互聯線中的薄區會消減電流訊號且可損害雙金屬鑲嵌的接續製造。除了凹陷,CMP製程通常因已知「侵蝕」作用而導致介電層過量移除。發生於鄰近互聯金屬之侵蝕可引發線路互聯線的尺寸缺陷。再者,侵蝕為低k值及超低k值介電層的特別問題。與凹陷的狀況類似,這些缺陷會消減電流訊號且損害後續雙金屬鑲嵌結構的製造。
移除阻障層及任何非所需覆蓋層後,第一覆蓋層停止層,例如為碳氮化矽停止層,通常防止CMP製程損害介電層。此停止層通常藉由控制移除速率來避免或減輕介電層侵蝕以保護下方介電層。阻障層及其他覆蓋層(如氮化矽及二氧化矽)的移除速率相對於停止層的移除速率為選擇比例(selectivity ratio)的例子。為了本案之目的,選擇率係指以每分埃(angstroms per minute)測量的移除速率。
對選擇性移除阻障層材料及覆蓋層(如氮化矽及二氧化矽)而不移除過量介電層(如低k值介電層)的組成物而言,其需求未被滿足。此外,亦需要具有下述特性之研磨半導體晶圓的漿液:移除阻障層;降低互聯線凹陷、降低介電層侵蝕;避免介電層剝離;以及與或不與碳氮化矽停止層一起操作。
本發明提供用於從半導體基材移除阻障層的溶液,包括0.001至25重量%的氧化劑、0.0001至5重量%的陰離子界面活性劑、0至15重量%的非鐵金屬抑制劑、0至40重量%的研磨料、0至20重量%的非鐵金屬錯合劑、0.01至12重量%之選自亞胺衍生物、聯胺(或稱作肼類)衍生物的阻障層移除劑及其混合物、與水;並且該溶液具有酸性pH值。
另一態樣中,本發明提供用於從半導體基材移除阻障層的溶液,包括0.01至20重量%的氧化劑、0.001至2重量%的陰離子界面活性劑、0.001至15重量%的非鐵金屬抑制劑、0至25重量%的研磨料、0至10重量%的非鐵金屬錯合劑、0.1至10重量%選自亞胺衍生物、聯胺衍生物的阻障層移除劑及其混合物、與水;並且該溶液具有大於2的酸性pH值。
在又一態樣中,本發明提供用於從半導體基材移除含鉭阻障層的方法,包括以研磨溶液研磨該半導體基材的步驟,該溶液包括0.001至25重量%的氧化劑、0.0001至5重量%的陰離子界面活性劑、0至15重量%的非鐵金屬抑制劑、0至40重量%的研磨料、0至20重量%的非鐵金屬錯合劑、0.01至12重量%之選自亞胺衍生物、聯胺衍生物的阻障層移除劑及其混合物、與水;並且該溶液具有酸性pH值。
該漿液與方法提供用於移除如鉭、氮化鉭及其他含鉭材料之阻障材料的超乎期待選擇性,且同時不移除過量低k值材料,如摻雜碳之氧化物(carbon-doped oxide,CDO)。漿液視陰離子界面活性劑之種類而選擇性地移除鉭、氮化鉭及其他含鉭之阻障材料,同時停止於氮化矽或碳氮化矽層或繼續將其移除。此選擇性降低互聯金屬的凹陷及介電層的侵蝕。再者,該漿液可移除如氮化矽、有機覆蓋物及介電質阻障材料及覆蓋層,而不會將脆弱的低k值介電層自半導體基材剝離式分層。此漿液的另一個好處為該組成物具有停止於摻雜碳之氧化物(CDO)層的能力。
在此說明書中使用之表面活化劑或界面活性劑,係指物質在存在時具有吸附於晶圓基材表面或界面或改變晶圓基材表面或界面之表面自由能的性質之物質。術語「界面」為在任兩個不能相互混合相(phase)的邊界。術語「表面」標示其中一相為氣體,通常為空氣的界面。界面活性劑通常用降低界面自由能(interfacial free energy)。
陰離子界面活性劑之分子結構之特徵為具有對水吸引力非常小之基團,一般稱為疏水性基團,以及具有對水吸引力強大之基團,一般稱之為親水性基團。陰離子界面活性劑具有親水性基團,當其在溶液中離子化時具有負離子電荷。疏水性基團通常為長鏈烴、氟碳化物或矽氧烷鏈且其長度在水溶解度方面為適當。特別是具有大於3個碳之鏈長之烴基團。最有利地,疏水性基團具有至少6個碳之鏈長。
較佳之陰離子界面活性劑含有至少一個選自羧酸鹽、磺酸鹽、硫酸鹽、或磷酸酯(磷酸酯或聚磷酸酯)的化學基團。界面活性劑的親水性部分可含有一個或多個氮原子或一個或多個氧原子或其混合物,但其含有至少一個可離子化基團以提供溶解度。本發明之陰離子界面活性劑的疏水性部分具有至少5個或更多個碳以提供足量的疏水性。疏水部份為直鏈、分枝鏈或環狀鏈。疏水部分可為飽和鏈、不飽和鏈或含芳香族基團。
通常高選擇性可藉由加入0.001至5重量%之界面活性劑而達到。除非另行標明,此說明書所有濃度係指重量百分比。再者,揭示範圍包括結合及部分結合範圍及限制於範圍內。較佳地,界面活性劑為0.001至2重量%;且最佳地,界面活性劑為0.01至1重量%。
界面活性劑包括至少一個選自麩胺酸烷酯鹽、苯磺酸十二烷酯鹽、α-烯烴磺酸鹽、磺酸基琥珀酸二烷酯鹽、烷基磺酸鹽、烷基兩性羥基丙基磺酸鹽、烷基羥基乙基咪唑啉、烷基醯胺基丙基甜菜鹼、甲基烷基牛磺酸鹽、烷基咪唑啉及其混合物之界面活性劑。特定界面活性劑尤其包括至少一種選自甲基椰子醯基牛磺酸鹽(methyl cocoyltaurate)、磺酸基琥珀酸二環己酯鹽(磺酸基琥珀酸1,4-二環己酯鹽)、磺酸基琥珀酸二壬酯鹽、椰子醯基兩性羥基丙基磺酸鹽(cocamphohydropropylsulfonate)、C14-17第二烷基磺酸鹽、異硬脂基羥基乙基咪唑啉、椰子基醯胺基丙基甜菜鹼、咪唑啉C8/C10、C14-16烯烴磺酸鹽、氫化脂麩胺酸鹽(hydrogenated tallow glutamate)、POE(4)油基醚磷酸酯、磺酸基琥珀酸月桂酯鹽、十二烷基苯磺酸鹽及其混合物中之陰離子界面活性劑。一般來說,這些界面活性劑係以其銨鹽、鉀鹽或鈉鹽加入。這些界面活性劑最佳以銨鹽加入以獲得高純度調配物。
陰離子界面活性劑對於碳氮化矽(SiCN)層、摻雜碳之氧化物(CDO)層或兩者之移除速率(以每分鐘多少埃來測定)之抑制率較佳大於對於鉭(Ta)或氮化鉭(TaN)之移除速率之抑制率。如果我們將膜X的移除速率的相對抑制率(△X)界定為:△X=(X0
-X)/X0
(其中X0
及X代表加入陰離子界面活性劑之前及之後的膜X的移除速率,單位為Å/min),本發明揭示的界面活性劑,當以13.8kPa(2 psi)之垂直於晶圓之多孔性聚胺甲酸酯研磨墊壓力(一般研磨晶圓時所用之壓力)及實施例的條件下測量時,較佳滿足至少下述一個式子(以TaN為例):△(SiCN)>△(TaN)或△(CDO)>△(TaN),例如,當在壓力為13.8kpa及下述實施例之條件下,以IC1010T M
研磨墊及不含界面活性劑之組成物進行研磨時,對照研磨速率(X0
)為:碳氮化矽,500/min;氮化鉭,800/min。在同樣條件下加入陰離子界面活性劑時,將碳氮化矽之研磨速率降低為300/min,而要滿足上述選擇性方程式,TaN的移除速率必須大於每分鐘300埃。
使用含亞胺或聯胺衍生物化合物之研磨溶液時,調整pH值及氧化劑濃度將促使阻障層之移除速率增加。此外,該溶液及方法提供超乎預期的對阻障材料的選擇性及控制性。雖然界面活性劑具有選擇做為或不做為阻障移除劑之功能,但溶液較佳含有選自亞胺或聯胺衍生物或其混合物所組成組群之阻障移除劑,以選擇性地移除阻障材料,如含鉭或含氮化鉭阻障層。該溶液可移除阻障材料,同時可降低介電質之侵蝕及降低金屬互聯線如銅的凹陷、侵蝕與刮痕。再者,該溶液可在不使低k值介電材料自半導體晶圓剝離或分層下,移除鉭阻障材料。此外,該溶液可控制TEOS之移除速率,該TEOS為從原矽酸四乙酯(TEOS)前驅物沉積所形成之二氧化矽硬遮罩。
特別是,溶液包括移除如鉭、氮化鉭、矽氮化鉭及其他含鉭阻障材料之阻障材料的阻障移除劑。雖然溶液在酸pH值對含鈦阻障材料有效,但溶液對含鉭材料特別有效。為了本說明書的目的,含鉭材料包括鉭、以鉭為主的合金及如鉭之碳化物、氮化物及氧化物之鉭之介金屬(intemetallic)。該漿液最有效為用於從圖案化半導體晶圓移除含鉭阻障層。
較佳亞胺衍生物包括式(I)之化合物:
其中,R1
為-H或-NH2
且R2
為-H、-NH2
、烴基、醯胺基、羧基、亞胺基、偶氮基、氰基、硫基、硒基、及-OR7
,其中R7
為烴基。
較佳聯胺衍生物包括式(II)之化合物:R3
R4
N-N R5
R6
(II)其中,R3
、R4
、R5
及R6
獨立為-H、-OR7
、-NH2
、烴基、羰基、亞胺基、偶氮基、氰基、硫基或硒基。
亞胺衍生物的例子包括乙脒、乙脒鹽、乙脒衍生物、精胺酸、精胺酸鹽、精胺酸衍生物、甲脒、甲脒鹽、甲脒衍生物、胍衍生物、胍鹽及其混合物。較佳式(I)之亞胺衍生物包括,例如乙脒鹽酸鹽、胺基胍鹽酸鹽、精胺酸、甲脒、甲脒亞磺酸鹽、甲脒乙酸鹽、1,3-二苯基胍、1-甲基-3-硝基胍、胍鹽酸鹽、四甲基胍、2,2-偶氮雙(二甲基-丙脒)二-鹽酸鹽、胍硫酸鹽、胍乙酸鹽、胍碳酸鹽、胍硝酸鹽及其混合物。
較佳式(II)之聯胺化合物包括,例如甲醯聯胺(carbohydrazide)、乙醯聯胺(acetic hydrazide)、半卡肼鹽酸鹽(semicarbazide hydrochloride)、1,2-二甲醯聯胺(1,2-diformylhydrazine)、甲基聯胺-羧酸縮合物(methylhydrazino arboxylate)、草醯基二聯胺、丙酮嗪(acetone azine)及甲醯聯胺及其混合物。
式(I)之亞胺衍生物較佳含有電子授予性取代基如R1
或R2
,且不含電子吸引性取代基。更佳地,R1
和R2
之一者為電子授予性取代基,而另一個為氫或電子授予性取代基。如果兩個電子授予性取代基出現在一個亞胺衍生物中,取代基可為相同或者可為不同。
式(II)之聯胺衍生化合物較佳含有聯胺(>N-NH2
)官能基,且含有不多於一個電子吸引性取代基。當R3
和R4
兩者為氫或當R5
和R6
兩者為氫時提供聯胺官能基。
為了本說明書的目的,術語「電子授予性」係指鍵結至物質(substance)之化學基團將電子密度轉移到該物質。F.A.Carey及R.J.Sundberg在Advanced Organic Chemistry,Part A:Structure and Mechanisms,第三版,New York,Plenum Press(1990),第208頁及第546-561頁提供更多電子授予性基的詳細描述。亞胺衍生物具有將足夠的電子密度轉移到物質之電子授予性取代基,以於取代基上建立可測量的部分負電子電荷。電子授予性取代基包括,例如胺基、羥基(-OH)、烷基、經取代之烷基、烴基、經取代之烴基、醯胺基及芳基。這些電子授予性取代基可加速含鉭阻障層的移除。
此外,具有電子吸引性取代基之研磨料添加劑使得亞胺及聯胺衍生化合物表現出效果。術語「電子吸引性」係指鍵結至物質之化學基團將電子密度轉離該物質。電子吸引性取代基從物質轉離足夠的電子密度以在取代基上建立可測量的部分正電荷而不會加速阻障層移除。電子吸引性取代基包括,例如-O-、烷基;-鹵素;-(C=O)H;-(C=)O-烷基;-C(=O)OH;-SO2
H;-SO3
H;以及-NO2
。吸引電子之羰基非為含於醯胺基中之羰基。
鉭阻障層移除劑可為乙脒、乙脒鹽、乙脒衍生物、精胺酸、精胺酸鹽、精胺酸衍生物、甲脒、甲脒鹽、甲脒衍生物、胍鹽、胍衍生物及其混合物。這些阻障層移除劑在酸性pH值下顯出對鉭阻障材料及含鉭材料具有強烈親合力。此親合力在有限研磨料或選擇性不含研磨料時顯示加速阻障移除速率。此研磨料的限量使用允許研磨移除鉭阻障層的速率大於介電層及金屬互連線的速率。溶液依靠選自甲脒、甲脒鹽、甲脒衍生物,如胍、胍衍生物、胍鹽及其混合物所組成之群組之鉭阻障層移除劑以選擇性移除鉭阻障材料。特別有效的阻障層移除劑包括胍、胍鹽酸鹽、胍硫酸鹽、胺基胍鹽酸鹽、胍乙酸鹽、胍碳酸鹽、胍硝酸鹽、甲脒、甲脒硫酸鹽、甲脒乙酸鹽及其混合物。較佳地,該溶液含有0.01至12重量%的阻障移除劑。最佳地,該溶液含有0.1至10重量%的阻障移除劑,而在多數應用中,阻障移除劑濃度介於0.1至4重量%提供足夠的阻障移除速率。
在酸性含水研磨溶液中,該阻障移除劑提供效力。較佳地,溶液之pH值大於2且剩餘為水。適用的pH值範圍為至少2至7。溶液之pH值較佳介於2至7。最佳地,溶液pH值介於3至5。調降pH值之試劑包括硝酸、硫酸、鹽酸、磷酸和有機酸。如有需要,最佳使用氫氧化鉀及硝酸進行最終的pH值調整。此外,溶液最佳使用去離子水(deionized wather)來調整最終量,以限制不純物進入。
在低於7的pH值下,氧化劑會促進阻障層的移除。組成物含有0.001至25重量%的氧化劑。該氧化劑尤其是在酸性pH值下會提供漿液有效之操作。較佳地,溶液含有0.001至20重量%的氧化劑。更佳地,溶液含有0.01至5重量%的氧化劑。氧化劑可為至少一種氧化化合物,如過氧化氫、單過硫酸鹽、碘酸鹽、過酞酸鎂、過乙酸、過硫酸鹽、溴酸鹽、過溴酸鹽、過氯酸鹽、過碘酸鹽、硝酸鐵、鐵鹽、鈰鹽、錳(III)鹽、錳(IV)鹽及錳(VI)鹽、銀鹽、銅鹽、鉻鹽、鈷鹽、鹵素、次氯酸鹽及其混合物。再者,使用氧化劑化合物的混合物通常是有利的。較佳地,氧化劑不是為過氧化氫就是碘酸鹽。當研磨漿液含有如過氧化氫之不穩定氧化劑時,通常最有利的是在使用的時點混入氧化劑。最有利的氧化劑為過氧化氫。
適合用於互連線之金屬包括,例如銅、銅合金、金、金合金、鎳、鎳合金、鉑族金屬、鉑族金屬合金、銀、銀合金、鎢、鎢合金及包括至少一前述金屬之混合物。較佳互連金屬為銅。酸性研磨組成物及漿液中使用如過氧化氫之氧化劑,會使銅移除速率及靜態蝕刻率變高,其主要原因為銅的氧化。為了降低互連金屬的移除速率,研磨組成物使用侵蝕抑制劑。侵蝕抑制劑的功能係用於降低互連金屬的移除速率。此功能藉由降低互連金屬的凹陷而促進改善研磨效能。
抑制劑視需要可以0至15重量%之量存在,該抑制劑意指單獨互連金屬抑制劑或其混合物。在此範圍中,抑制劑之含量宜等於或大於0.001重量%,較佳大於或等於0.05重量%。同樣地在此範圍內,抑制劑量宜小於或等於4重量%,較佳小於或等於1重量%。較佳之侵蝕抑制劑為苯并三唑(BTA)。在一實施例中,研磨組成物可含有相對大量的BTA抑制劑以降低互連金屬移除速率。當BTA濃度大於0.05重量%時,則可不需要額外補充侵蝕抑制劑。BTA之較佳濃度為0.0025至2重量%。
除了抑制劑,溶液視需要可含有0至20重量%之非鐵金屬錯合劑。此錯合劑存在時,可防止藉由溶解非鐵金屬互聯線而形成金屬離子沉澱。更有利地,溶液含有0至10重量%之非鐵金屬錯合劑。錯合劑之例子包括乙酸、檸檬酸、乙醯乙酸乙酯、乙醇酸、乳酸、蘋果酸、草酸、水楊酸、二乙基二硫胺基甲酸鈉、琥珀酸、酒石酸、硫乙醇酸、甘胺酸、丙胺酸、天門冬胺酸、乙二胺、三甲基二胺、丙二酸、麩胺酸、3-羥基丁酸、丙酸、酞酸、異酞酸、3-羥基水楊酸、3,5-二羥基水楊酸、鎵酸、葡糖酸、鄰苯二酚、1,2,3-苯三酚、丹寧酸、鹽及其混合物。有利地,錯合劑係選自乙酸、檸檬酸、乙醯乙酸乙酯、乙醇酸、乳酸、蘋果酸、草酸及其混合物其中之一。最有利地,錯合劑為檸檬酸。
雖然含氮研磨料提供有效的不含研磨料之研磨流體,但在一些應用中,可依需要添加研磨料至研磨流體中。研磨組成物視需要可含有多達40重量%的研磨料(較佳為0至25重量%),以促進阻障層之移除或阻障層及二氧化矽二者的移除一根據整合方案,研磨組成物可用i)移除遮罩層或該膜下方之阻障層;或ii)首先移除阻障層接著移除含二氧化矽之層。研磨組成物視需要包含用「機械」移除阻障層之研磨料。研磨料較佳為膠體研磨料(colloidal abrasive)。研磨料例子包括無機氧化物、金屬硼化物、金屬碳化物、金屬氮化物、聚合物粒子及包含至少前述一者之混合物。適當無機氧化物包括,例如二氧化矽(SiO2
)、氧化鋁(Al2
O3
)、氧化鋯(ZrO2
)、氧化鈰(CeO2
)、氧化錳(MnO2
)或包含至少前述一氧化物之混合物。如需要亦可使用這些氧化物的改質體如聚合物披覆無機氧化物之粒子及無機披覆粒子。適合金屬碳化物、硼化物及氮化物包括,例如碳化矽、氮化矽、碳氮化矽(SiCN)、氮化硼、碳化鎢、碳化鋯、硼化鋁、碳化鉭、碳化鈦,或包含至少前述一金屬碳化物、硼化物及氮化物之混合物。如需要鑽石可作為研磨料。或者研磨料亦包含聚合物粒子和披覆聚合物粒子。較佳研磨料為二氧化矽。
有利地,以研磨組成物的總重量為基準計,該研磨料係以0.05至15重量%的量存在。在此範圍中,研磨料宜以大於或等於0.1重量%的量存在,而較佳為大於或等於0.5重量%。同樣地在此範圍內,研磨料量宜小於或等於10重量%,而較佳為小於或等於5重量%。
研磨料具有平均粒子大小(size)為小於或等於150奈米(nanometer,nm),以防止過度金屬凹陷及介電層侵蝕。為了本說明書的目的,粒子大小係指研磨料的平均粒子大小。期望使用具有平均粒子大小為小於或等於100奈米,較佳為小於或等於50奈米之膠體研磨料。使用具有平均粒子大小為小於或等於40奈米之膠體二氧化矽將最少發生介電侵蝕和金屬凹陷。減少膠體研磨料大小至小於或等於40奈米時,則會有助於增加研磨組成物的選擇性;但其亦有助於減少阻障層移除速率。此外,較佳膠體研磨料還可包括添加劑,如分散劑、界面活性劑及緩衝劑以增加膠體研磨料在酸性pH值範圍的穩定性。該種膠體研磨料中之一種係為得自Clariant S.A.,Puteaix,France之二氧化矽。化學機械平坦化組成物視需要可包括增亮劑如氯化鎂、pH緩衝劑、殺生物劑及消泡劑。
如果研磨組成物不含有研磨料,墊之選擇和研磨條件對於化學機械平坦化(CMP)製程變得更為重要。例如,對一些不含研磨料的組成物而言,固定研磨料研磨墊會增加研磨性能。
以少於13.85kPa之垂直於晶圓之多孔性聚胺基甲酸酯研磨墊壓力(一般研磨晶圓時所用之壓力)測量時,該漿液可提供至少2:1之TaN/SiN選擇性及TaN/CDO之選擇性。用於測定選擇性的特定研磨墊為多孔性聚胺甲酸酯研磨墊,如IC1000TM
研磨墊由羅門哈斯電子材料CMP技術公司銷售。以多孔性聚胺基甲酸酯研磨墊在少於13.85kPa之壓力(一般研磨晶圓時所用之壓力)測量時,該漿液提供至少2比1的TaN/CDO選擇性;TaN/CDO選擇性以至少5比1為更佳。調整界面活性劑濃度、漿液pH值、氧化劑濃度及鉭移除劑濃度,將可調整選擇性。調整抑制劑、氧化劑或錯合劑,將可調整互連金屬的移除速率。
所有測試在室溫進行且使用200 mm晶圓。測試使用下述薄片晶圓(sheet wafer);TEOS SiO2
、電鍍銅、CDO(由SemiTech製造之碳摻雜氧化物低k值晶圓)氮化鉭、鉭、SiCN和SiN。
在Strasbaugh 6EC上使用由羅門哈斯電子材料CMP技術公司所製造的IC1010或Politex研磨墊進行研磨。除非另行指明,否則研磨向下壓力為2 psi(13.8 kPa)。以Kinik鑽石研磨料修整碟片(conditioning disk)(“1508070”150微米(micron)鑽石大小,80微米突出高度及鑽石間距70微米)維持研磨墊表面粗糙度。平台(platen)及載具(carrier)速度分別為120及114rpm。漿液流速為200 ml/min。移除速率可由研磨前後的膜厚差除以研磨時間而獲得。使用Therma Wave Optiprobe 2600並使用49個映射點(mapped point)對TEOS、CDO、SiCN及SiN進行膜厚測量。在CDE上並使用91個映射點進行氮化鉭、鉭和銅厚度之量測。所有報告的移除速率單位為/min。研磨時間為60秒,但對低移除速率配方增加至20秒,以增加準確性。
在實施例中,漿液之pH為3.5。漿液含有至少0.4重量%的胍鹽酸鹽(guanidine HCl,GHC)以增加TaN及Ta之移除速率。加入0.5重量%H2
O2
,以使GHC在低pH值下移除TaN及Ta之速率增加。至少1重量%苯并三唑能有效避免銅表面的過度侵蝕。研磨料為3重量%二氧化矽(PL150H25,25奈米的平均粒子大小,得自Clariant),因其顯示25奈米粒子大小的二氧化矽研磨料產生低表面缺陷。雖然選取3重量%研磨料,當瞭解如有需要可加入更多研磨料,不過已發現使用超過約3至4重量%的二氧化矽,表面缺陷會增加。為了本說明書之目的,字母表示比較例,數字代表本發明實施例。
甲基椰子醯基牛磺酸鈉為來自Rhodia USA之Geropeon TC-270,結構為RCO-NCH3
CH2
CH2
SO3
Na,RCO-代表椰子酸(coconut acid)根。
磺酸基琥珀酸二環乙酯鈉為得自Finetex Inc.之Gemtex691-40(磺酸基琥珀酸1,4-二環己酯鈉)。
磺酸基琥珀酸二壬酯鈉為來自Rhodia USA之Geropon WS-25/I。
椰子醯基兩性羥基丙基磺酸鈉為來自McIntyre Group Ltd之Mackam CS,具結構為RCO-NH(CH2
)6
N(OH)2
CHSO3
Na,RCO-代表椰子酸殘基(椰子醯基)。
C14-17第二烷基磺酸鈉為得自Clariant公司之Hostapur SAS 30。
二氧化矽為得自Clariant公司之PL150H25,其具有平均粒子直徑為25奈米。
GHC代表胍鹽酸鹽。
甲基椰子醯基牛磺酸鈉抑制CDO、SiCN及SiN移除速率
從表1,可見添加0.2重量%的甲基椰子醯基牛磺酸鈉會使CDO的移除速率從200降低至30/min,及使SiCN的移除速率從640降低至28/min,而TaN之移除速率只有下降約15%。TEOS移除速率從390降低至240/min。該數據顯示速率變化符合說明書前述定義的選擇性方程式。
磺酸基琥珀酸二環己酯鈉抑制CDO之移除速率但不抑制SiCN及SiN之移除速率
在SiN移除為重要且CDO的移除必須被抑制之應用中,可使用磺酸基琥珀酸二環己酯鈉。
磺酸基琥珀酸二壬酯鈉抑制CDO及SiCN之移除速率但不抑制SiN之移除速率
磺酸基琥珀酸二壬酯鈉為功能介於磺酸基琥珀酸二環己酯鈉及甲基椰子醯基牛磺酸鈉之間的界面活性劑。其抑制CDO及部分抑制SiN(只有在高濃度時)。用於SiCN抑制時,其不如甲基椰子醯基牛磺酸鈉好,但比磺酸基琥珀酸二環己酯鈉優異。磺酸基琥珀酸二壬酯鈉僅在一定濃度及以上才會抑制SiN,而低於該濃度則幾乎對SiN不會有抑制效果。磺酸基琥珀酸二壬酯鈉在結構上和磺酸基琥珀酸二環己酯鈉非常相近,只是用於酯化之基團不同(分別為壬基與環己基)。
具有上述抑制效果之任一種其他添加劑
椰子醯基兩性羥基丙基磺酸鹽為另一種椰子醯基型的陰離子界面活性劑。然而,椰子醯基兩性羥基丙基磺酸鹽在抑制CDO、SiCN及SiN上不如甲基椰子醯基牛磺酸鈉。出現此差別是因為前端(親水基)基團之故。兩種界面活性劑的差別如下述強調:RCO-NH(CH2
)6
N(OH)2
CHSO3
Na(椰子醯基兩性羥基丙基磺酸鈉)及RCO-NCH3
CH2
CH2
SO3
Na(甲基椰子醯基牛磺酸鈉)。可發現椰子醯基兩性羥基丙基磺酸鈉的前端基團比甲基椰子醯基牛磺酸鈉的前端基團更具親水性。此顯示疏水性較高的界面活性較具抑制性。
C14-17第二烷基磺酸鈉可優異地抑制CDO、SiCN及SiN,如表1所見。此界面活性劑具有二級烷基基團,可作為低k值圖案化晶圓之濕潤劑。該濕潤劑對低k值阻障層漿液特別重要。
以下表2提供陰離子界面活性劑二次篩選。
異硬脂基羥基乙基咪唑啉為由Scher Chemicals,Inc.所製造之Schercozoline I。
椰子基醯胺基丙基甜菜鹼(RCO-NH(CH2
)3
N+
(CH3
)2
CH2
COO-
)為由McIntyre Group Ltd.所銷售之Mackam 35-HP。
咪唑啉C8/C10為由Lonza Ltd.所製造之Amphoterge KJ-2(C8/C10咪唑啉)。
C14-16烯烴磺酸鈉為由Stepan Co.所製造之Bioterge AS-40。
氫化脂麩胺酸鈉為由Ajinomoto Co.,Inc.製造之Amisoft HS-11P(F)。
POE(4)油基醚磷酸酯為由Global-Seven Inc.所製造之Hetphos。
磺酸基琥珀酸月桂酯銨鹽為由Uniqema Chemical Ltd.所製造之Monamate LNT-40。
十二烷基苯磺酸鈉為得自Stepan Co.之Biosoft D-40。
二氧化矽為得自Clariant公司之PL150H25,其具有平均粒子直徑為25奈米。
GHC代表胍鹽酸鹽。
參考表2,小量異硬脂基羥基-乙基咪唑啉(Scherozoline I)顯示除了TaN與Ta移除速率之外,其抑制所有事情。這樣的設計對不須要將TEOS移者特別有效。其他界面活性劑則說明選擇性減少CDO及SiCN層的移除速率之能力。
此外,該溶液及方法對移除如鉭、氮化鉭及氧化鉭之鉭阻障材料及如氮化矽、氧化矽之覆蓋層視需要提供優異選擇性,且同時停止於碳氮化矽層。此外,該溶液選擇性移除阻障層、覆蓋層、介電層、抗反射塗層及硬遮罩同時停止於碳氮化矽層以保護下層介電層且降低或消除介電層侵蝕。此外,組成物包括停止於碳氮化矽層或CDO層作用的優點。此點允許單一漿液在一個整合方案內提供多功能。
Claims (9)
- 一種用於從半導體基材移除阻障層之溶液,該半導體基材包含氮化鉭(TaN)、銅和摻雜碳之氧化物(CDO),該溶液包括0.001至25重量%的氧化劑、0.02至0.35重量%的陰離子界面活性劑、0至15重量%的非鐵金屬抑制劑、0至40重量%的研磨料、0至20重量%的非鐵金屬錯合劑、0.01至12重量%之選自甲脒、甲脒鹽、甲脒衍生物、胍、胍衍生物、胍鹽及其混合物的阻障層移除劑、與水;其中,該溶液具有酸性pH值,且以少於13.85kPa之垂直於晶圓之微多孔性聚胺基甲酸酯研磨墊壓力測量時,提供至少2:1之TaN/CDO之選擇性。
- 如申請專利範圍第1項之溶液,其中,該陰離子界面活性劑含有至少一選自羧酸鹽、磺酸鹽、硫酸鹽及磷酸酯的化學基團。
- 如申請專利範圍第1項之溶液,其中,該陰離子界面活性劑係選自麩胺酸烷酯鹽、十二烷基苯磺酸鹽、烷基α-烯烴磺酸鹽、磺酸基琥珀酸二烷酯鹽、烷基磺酸鹽、烷基兩性羥基丙基磺酸鹽(alkylamphohydroxylpropyl sulfonates)、烷基羥基乙基咪唑啉、烷基醯胺基丙基甜菜鹼、甲基烷基牛磺酸鹽、烷基咪唑啉及其混合物中之至少一者。
- 如申請專利範圍第1項之溶液,其中,該溶液不含研磨料。
- 一種用於從半導體基材移除阻障層之溶液,該半導體基 材包含氮化鉭(TaN)和摻雜碳之氧化物(CDO),該溶液包括0.01至20重量%的氧化劑、0.02至0.35重量%的陰離子界面活性劑、0.001至15重量%的非鐵金屬抑制劑、0至25重量%的研磨料、0至10重量%的非鐵金屬錯合劑、0.1至10重量%選自甲脒、甲脒鹽、甲脒衍生物、胍、胍衍生物、胍鹽及其混合物的阻障層移除劑、與水;其中,該溶液具有大於2的酸性pH值,且以少於13.85kPa之垂直於晶圓之微多孔性聚胺基甲酸酯研磨墊壓力測量時,提供至少2:1之TaN/CDO之選擇性。
- 如申請專利範圍第5項之溶液,其中,該陰離子界面活性劑含有至少一選自羧酸鹽、磺酸鹽、硫酸鹽及磷酸酯的化學基團。
- 如申請專利範圍第5項之溶液,其中,該陰離子界面活性劑係選自麩胺酸烷酯鹽、十二烷基苯磺酸鹽、烷基α-烯烴磺酸鹽、磺酸基琥珀酸二烷酯鹽、烷基磺酸鹽、烷基兩性羥基丙基磺酸鹽、烷基羥基乙基咪唑啉、烷基醯胺基丙基甜菜鹼、甲基烷基牛磺酸鹽、烷基咪唑啉及其混合物中之至少一者。
- 如申請專利範圍第5項之阻障層移除溶液,其中,該陰離子界面活性劑係選自甲基椰子醯基牛磺酸鹽(methyl cocoyltaurate)、磺酸基琥珀酸二環己酯鹽(磺酸基琥珀酸1,4-二環己酯鹽)、磺酸基琥珀酸二壬酯鹽、椰子醯基兩性羥基丙基磺酸鹽(cocamphohydropropylsulfonate)、C14-17第二烷基磺酸鹽、異硬脂基羥基乙基咪唑啉、椰 子基醯胺基丙基甜菜鹼、咪唑啉C8/C10、C14-16烯烴磺酸鹽、氫化脂麩胺酸鹽(hydrogenated tallow glutamate)、POE(4)油基醚磷酸酯、磺酸基琥珀酸月桂酯鹽、十二烷基苯磺酸鹽及其混合物中之至少一者。
- 如申請專利範圍第5項之溶液,其中,該溶液不含研磨料。
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Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1150341A4 (en) * | 1998-12-28 | 2005-06-08 | Hitachi Chemical Co Ltd | MATERIALS FOR METAL POLLING LIQUID, METAL POLISHING LIQUID, THEIR PRODUCTION AND POLISHING METHOD |
KR20060077353A (ko) * | 2004-12-30 | 2006-07-05 | 삼성전자주식회사 | 슬러리 조성물, 이를 이용한 가공물의 연마방법 및 반도체장치의 콘택 형성방법 |
US7678702B2 (en) * | 2005-08-31 | 2010-03-16 | Air Products And Chemicals, Inc. | CMP composition of boron surface-modified abrasive and nitro-substituted sulfonic acid and method of use |
WO2007102138A2 (en) * | 2007-01-02 | 2007-09-13 | Freescale Semiconductor, Inc. | Barrier slurry compositions and barrier cmp methods |
US20080276543A1 (en) * | 2007-05-08 | 2008-11-13 | Thomas Terence M | Alkaline barrier polishing slurry |
US9691622B2 (en) | 2008-09-07 | 2017-06-27 | Lam Research Corporation | Pre-fill wafer cleaning formulation |
US8071479B2 (en) * | 2008-12-11 | 2011-12-06 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and methods relating thereto |
SG10201408636XA (en) * | 2009-12-23 | 2015-02-27 | Lam Res Corp | Post deposition wafer cleaning formulation |
JP5941763B2 (ja) * | 2012-06-15 | 2016-06-29 | 株式会社荏原製作所 | 研磨方法 |
US8961807B2 (en) | 2013-03-15 | 2015-02-24 | Cabot Microelectronics Corporation | CMP compositions with low solids content and methods related thereto |
EP3209815B1 (en) * | 2014-10-21 | 2021-12-29 | CMC Materials, Inc. | Corrosion inhibitors and related compositions and methods |
US10144850B2 (en) * | 2015-09-25 | 2018-12-04 | Versum Materials Us, Llc | Stop-on silicon containing layer additive |
US11111435B2 (en) | 2018-07-31 | 2021-09-07 | Versum Materials Us, Llc | Tungsten chemical mechanical planarization (CMP) with low dishing and low erosion topography |
JP7120846B2 (ja) * | 2018-08-10 | 2022-08-17 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びその製造方法並びに研磨方法並びに基板の製造方法 |
US10763119B2 (en) * | 2018-12-19 | 2020-09-01 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of using same |
US10759970B2 (en) * | 2018-12-19 | 2020-09-01 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of using same |
CN113767155A (zh) * | 2019-04-29 | 2021-12-07 | 弗萨姆材料美国有限责任公司 | 选择性化学机械平面化抛光 |
KR102367056B1 (ko) * | 2020-02-27 | 2022-02-25 | 주식회사 케이씨텍 | 화학적 기계적 연마용 슬러리 조성물 |
TW202138532A (zh) * | 2020-03-25 | 2021-10-16 | 日商福吉米股份有限公司 | 研磨用組合物、其製造方法、研磨方法及半導體基板的製造方法 |
US11680186B2 (en) * | 2020-11-06 | 2023-06-20 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of using same |
CN115537123B (zh) * | 2022-11-09 | 2023-08-15 | 博力思(天津)电子科技有限公司 | 一种聚醚醚酮材料用化学机械抛光液 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020037642A1 (en) * | 1999-12-28 | 2002-03-28 | Tomoko Wake | Process for forming a metal interconnect |
US20020096659A1 (en) * | 2000-11-24 | 2002-07-25 | Fujimi Incorporated | Polishing composition and polishing method employing it |
US20020095872A1 (en) * | 2000-11-24 | 2002-07-25 | Nec Corporation | Chemical mechanical polishing slurry |
US20030170991A1 (en) * | 1999-08-13 | 2003-09-11 | Cabot Microelectronics Corporation | Method of polishing a multi-layer substrate |
TW200305637A (en) * | 2002-03-25 | 2003-11-01 | Rodel Inc | Tantalum barrier removal solution |
US20040147118A1 (en) * | 2003-01-23 | 2004-07-29 | Zhendong Liu | Selective barrier metal polishing solution |
US20040171265A1 (en) * | 2003-02-27 | 2004-09-02 | Qianqiu Ye | Modular barrier removal polishing slurry |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020111024A1 (en) * | 1996-07-25 | 2002-08-15 | Small Robert J. | Chemical mechanical polishing compositions |
US5916855A (en) | 1997-03-26 | 1999-06-29 | Advanced Micro Devices, Inc. | Chemical-mechanical polishing slurry formulation and method for tungsten and titanium thin films |
JP3337464B2 (ja) | 1998-08-31 | 2002-10-21 | 日立化成工業株式会社 | 金属用研磨液及び研磨方法 |
JP2000109816A (ja) | 1998-10-05 | 2000-04-18 | Okamoto Machine Tool Works Ltd | 研磨剤スラリ−の調製方法 |
SG99289A1 (en) | 1998-10-23 | 2003-10-27 | Ibm | Chemical-mechanical planarization of metallurgy |
EP1205965B1 (en) | 1999-06-18 | 2006-11-15 | Hitachi Chemical Company, Ltd. | Use of cmp abrasive |
US6443812B1 (en) | 1999-08-24 | 2002-09-03 | Rodel Holdings Inc. | Compositions for insulator and metal CMP and methods relating thereto |
JP4505891B2 (ja) | 1999-09-06 | 2010-07-21 | Jsr株式会社 | 半導体装置の製造に用いる化学機械研磨用水系分散体 |
US6503418B2 (en) | 1999-11-04 | 2003-01-07 | Advanced Micro Devices, Inc. | Ta barrier slurry containing an organic additive |
TW572980B (en) | 2000-01-12 | 2004-01-21 | Jsr Corp | Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing process |
US20030061766A1 (en) | 2000-03-31 | 2003-04-03 | Kristina Vogt | Polishing agent and method for producing planar layers |
US6524168B2 (en) * | 2000-06-15 | 2003-02-25 | Rodel Holdings, Inc | Composition and method for polishing semiconductors |
EP1211024A3 (en) | 2000-11-30 | 2004-01-02 | JSR Corporation | Polishing method |
US6899804B2 (en) | 2001-12-21 | 2005-05-31 | Applied Materials, Inc. | Electrolyte composition and treatment for electrolytic chemical mechanical polishing |
US6679928B2 (en) | 2001-04-12 | 2004-01-20 | Rodel Holdings, Inc. | Polishing composition having a surfactant |
US6866792B2 (en) * | 2001-12-12 | 2005-03-15 | Ekc Technology, Inc. | Compositions for chemical mechanical planarization of copper |
US6821309B2 (en) | 2002-02-22 | 2004-11-23 | University Of Florida | Chemical-mechanical polishing slurry for polishing of copper or silver films |
US20030162399A1 (en) | 2002-02-22 | 2003-08-28 | University Of Florida | Method, composition and apparatus for tunable selectivity during chemical mechanical polishing of metallic structures |
US20030219982A1 (en) | 2002-05-23 | 2003-11-27 | Hitachi Chemical Co., Ltd | CMP (chemical mechanical polishing) polishing liquid for metal and polishing method |
TWI282360B (en) * | 2002-06-03 | 2007-06-11 | Hitachi Chemical Co Ltd | Polishing composition and polishing method thereof |
JP2004193495A (ja) | 2002-12-13 | 2004-07-08 | Toshiba Corp | 化学的機械的研磨用スラリーおよびこれを用いた半導体装置の製造方法 |
JP2004247605A (ja) * | 2003-02-14 | 2004-09-02 | Toshiba Corp | Cmp用スラリーおよび半導体装置の製造方法 |
US20050022456A1 (en) * | 2003-07-30 | 2005-02-03 | Babu S. V. | Polishing slurry and method for chemical-mechanical polishing of copper |
US7241725B2 (en) * | 2003-09-25 | 2007-07-10 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Barrier polishing fluid |
US20050136671A1 (en) * | 2003-12-22 | 2005-06-23 | Goldberg Wendy B. | Compositions and methods for low downforce pressure polishing of copper |
-
2004
- 2004-09-29 US US10/952,999 patent/US7988878B2/en active Active
-
2005
- 2005-09-27 TW TW094133466A patent/TWI396730B/zh active
- 2005-09-29 JP JP2005283690A patent/JP2006100835A/ja active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030170991A1 (en) * | 1999-08-13 | 2003-09-11 | Cabot Microelectronics Corporation | Method of polishing a multi-layer substrate |
US20020037642A1 (en) * | 1999-12-28 | 2002-03-28 | Tomoko Wake | Process for forming a metal interconnect |
US20020096659A1 (en) * | 2000-11-24 | 2002-07-25 | Fujimi Incorporated | Polishing composition and polishing method employing it |
US20020095872A1 (en) * | 2000-11-24 | 2002-07-25 | Nec Corporation | Chemical mechanical polishing slurry |
TW200305637A (en) * | 2002-03-25 | 2003-11-01 | Rodel Inc | Tantalum barrier removal solution |
US20040147118A1 (en) * | 2003-01-23 | 2004-07-29 | Zhendong Liu | Selective barrier metal polishing solution |
US20040171265A1 (en) * | 2003-02-27 | 2004-09-02 | Qianqiu Ye | Modular barrier removal polishing slurry |
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