TWI394501B - Etching system and method for regenerating etchant - Google Patents
Etching system and method for regenerating etchant Download PDFInfo
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- TWI394501B TWI394501B TW98145229A TW98145229A TWI394501B TW I394501 B TWI394501 B TW I394501B TW 98145229 A TW98145229 A TW 98145229A TW 98145229 A TW98145229 A TW 98145229A TW I394501 B TWI394501 B TW I394501B
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本發明涉及印刷電路板領域,尤其涉及一種檢測電路板邊接頭衝型偏差之電路板製作方法。 The present invention relates to the field of printed circuit boards, and more particularly to a method for fabricating a circuit board for detecting a deviation of a board edge joint.
電路板中之導電線路通常藉由對銅箔層進行影像轉移-蝕刻形成。具體為,首先於銅箔層表面形成感光材料層,然後對感光材料層進行曝光及顯影,從而於銅箔層表面形成與欲形成之導電線路圖形相同之感光材料圖形,最後對形成有感光材料圖形進行蝕刻,使得銅箔層被感光材料遮蓋之部分不被蝕刻而沒有被感光材料遮蓋之部分被蝕刻,從而得到導電線路。 The conductive traces in the board are typically formed by image transfer-etching of the copper foil layer. Specifically, a photosensitive material layer is first formed on the surface of the copper foil layer, and then the photosensitive material layer is exposed and developed to form a photosensitive material pattern on the surface of the copper foil layer which is the same as the conductive line pattern to be formed, and finally the photosensitive material is formed. The pattern is etched so that a portion of the copper foil layer covered by the photosensitive material is not etched and a portion not covered by the photosensitive material is etched, thereby obtaining a conductive line.
對銅箔層進行蝕刻採用之蝕刻液通常為二價銅之酸性溶液。於蝕刻液進行蝕刻之後,通常需要對其進行再生而使其再次使用。先前技術中,蝕刻系統通常包括噴液裝置、承載輸送裝置及集液槽,承載輸送裝置位於噴液裝置與集液槽之間,噴液裝置與集液槽之間連接有輸液管及泵,並且集液槽與再生劑輸入管及廢液槽相連接,噴液裝置將集液槽中之蝕刻液藉由噴液裝置噴至承載輸送裝置上之電路基板,蝕刻液蝕刻電路基板後流回至集液槽內,同時,再生藥水亦注入集液槽中,蝕刻電路板後之蝕刻液沒有與再生劑充分反應均勻就被輸送至噴液裝置,使得噴液裝置噴灑之蝕刻液成分不穩定。另外,蝕刻液如此循環使用,使得集液槽內之蝕刻液中銅之二價離子與一價離子之濃度之和即蝕刻液之密度不斷增加, 從而不能保證蝕刻液之蝕刻能力,使得蝕刻電路板之速率與品質不能得到保證。 The etching solution used for etching the copper foil layer is usually an acidic solution of divalent copper. After the etching solution is etched, it is usually necessary to regenerate it for reuse. In the prior art, the etching system generally includes a liquid discharging device, a carrying conveying device and a liquid collecting tank, and the carrying conveying device is located between the liquid discharging device and the liquid collecting tank, and the infusion pipe and the pump are connected between the liquid discharging device and the liquid collecting tank. And the liquid collecting tank is connected with the regenerant input pipe and the waste liquid tank, and the liquid discharging device sprays the etching liquid in the liquid collecting tank to the circuit substrate on the carrying conveying device by the liquid discharging device, and the etching liquid etches the circuit substrate and flows back. Into the sump, at the same time, the regenerated syrup is also injected into the sump, and the etchant after etching the circuit board is not uniformly reacted with the regenerant and is sent to the liquid ejecting device, so that the etchant component sprayed by the liquid ejecting device is unstable. . In addition, the etching liquid is recycled in such a manner that the sum of the concentration of the divalent ions of copper and the monovalent ions in the etching liquid in the liquid collecting tank, that is, the density of the etching liquid, is continuously increased. Therefore, the etching ability of the etching liquid cannot be ensured, so that the rate and quality of the etching circuit board cannot be ensured.
有鑑於此,提供一種蝕刻系統及一種蝕刻液再生方法,能夠使得再生之蝕刻液成分均勻穩定實屬必要。 In view of the above, an etching system and an etching liquid regeneration method are provided, which are necessary to make the regenerated etching liquid composition uniform and stable.
以下將以實施例說明一種蝕刻系統及蝕刻液再生方法。 An etching system and an etching solution regeneration method will be described below by way of examples.
一種蝕刻系統,用於蝕刻電路板,所述蝕刻系統包括噴液裝置、集液槽及設置於集液槽外之蝕刻液再生裝置,所述噴液裝置用於向電路板表面噴淋蝕刻液,所述集液槽用於收容蝕刻電路板後之蝕刻液,所述蝕刻液再生裝置包括再生反應塔與再生液存儲塔,所述再生反應塔用於對從集液槽定量注入之蝕刻電路板後之蝕刻液進行再生,所述再生液存儲塔用於存儲再生處理後之蝕刻液,並將該再生處理後之蝕刻液供應至噴液裝置。 An etching system for etching a circuit board, the etching system comprising a liquid discharging device, a liquid collecting tank and an etching liquid regenerating device disposed outside the liquid collecting tank, wherein the liquid discharging device is used for spraying the etching liquid onto the surface of the circuit board The sump is configured to receive an etchant after etching the circuit board, the etchant regeneration device includes a regeneration reaction tower and a regeneration liquid storage tower, and the regeneration reaction tower is used for etching a circuit for quantitatively injecting from the sump The etching liquid behind the plate is used for regeneration, and the regenerating liquid storage tower is for storing the etching liquid after the regeneration processing, and supplies the etching liquid after the regeneration processing to the liquid ejecting apparatus.
一種蝕刻液再生方法,包括步驟:提供所述之蝕刻系統;將定量集液槽內之蝕刻電路板後之蝕刻液注入至蝕刻液再生裝置之再生反應塔內;對再生反應塔內之蝕刻電路板後之蝕刻液進行再生處理,從而得到再生處理後之蝕刻液;將再生處理後之蝕刻液注入再生液存儲塔內,以向噴液裝置供應再生處理後之蝕刻液。 An etching liquid regeneration method comprising the steps of: providing the etching system; injecting an etching liquid after etching the circuit board in the quantitative liquid collecting tank into a regeneration reaction tower of the etching liquid regeneration device; and etching the etching circuit in the regeneration reaction tower The etching liquid after the plate is subjected to regeneration treatment to obtain an etching liquid after the regeneration treatment; and the etching liquid after the regeneration processing is injected into the regeneration liquid storage tower to supply the etching liquid after the regeneration processing to the liquid discharging device.
與先前技術相比,本技術方案提供之蝕刻系統,能夠將蝕刻電路板後之蝕刻液從集液槽內轉移到再生裝置內進行批量再生處理,再將批量再生處理後之成分均勻之蝕刻液用於進行後續之蝕刻,從而可避免直接於集液槽內 直接進行再生後直接應用而使得之再生處理後之蝕刻液成分不均勻導致之蝕刻速率不穩定之問題。 Compared with the prior art, the etching system provided by the technical solution can transfer the etching liquid after etching the circuit board from the liquid collecting tank to the regenerating device for batch regeneration processing, and then uniformly etch the liquid after the batch regeneration processing. Used for subsequent etching, thus avoiding direct in the sump The problem that the etching rate is unstable after the regeneration is directly applied and the etching liquid composition after the regeneration treatment is not uniform is unstable.
下面結合附圖及實施例對本技術方案提供之蝕刻系統及蝕刻液再生方法作進一步說明。 The etching system and the etching solution regeneration method provided by the technical solution are further described below with reference to the accompanying drawings and embodiments.
請參閱圖1,本技術方案實施例提供之蝕刻系統100包括噴液裝置110、集液槽120、蝕刻液再生裝置130、連通於集液槽120與蝕刻液再生裝置130之間之第一導液管140、安裝於第一導液管140之第一泵160a、連通於噴液裝置110與蝕刻液再生裝置130之間之第二導液管150及安裝於第二導液管150之第二泵160b。 Referring to FIG. 1 , an etching system 100 provided by an embodiment of the present technical solution includes a liquid discharging device 110 , a liquid collecting tank 120 , an etching liquid regeneration device 130 , and a first guide between the liquid collecting tank 120 and the etching liquid regeneration device 130 . The liquid pipe 140, the first pump 160a attached to the first liquid guiding tube 140, the second liquid guiding tube 150 connected between the liquid discharging device 110 and the etching liquid regenerating device 130, and the second liquid guiding tube 150 Two pumps 160b.
噴液裝置110包括至少一根噴管111。噴管111設有多個噴口112,用於向進行蝕刻之電路板表面噴灑蝕刻液。噴管111與第二導液管150及第二泵160b相連通。當然,噴管111可為複數根,複數根噴管111可相互平行設置,從而噴口112噴出之蝕刻液覆蓋較大面積,能夠提高蝕刻之速率。 The liquid discharge device 110 includes at least one nozzle 111. The nozzle 111 is provided with a plurality of nozzles 112 for spraying an etchant onto the surface of the circuit board to be etched. The nozzle 111 is in communication with the second liquid conduit 150 and the second pump 160b. Of course, the nozzle 111 can be a plurality of roots, and the plurality of nozzles 111 can be disposed in parallel with each other, so that the etching liquid sprayed from the nozzle 112 covers a large area, and the etching rate can be increased.
集液槽120設置於噴液裝置110之下方,用於容納蝕刻電路板後之蝕刻液。集液槽120與蝕刻液再生裝置130藉由第一導液管140及安裝於第一導液管140之第一泵160a向蝕刻液再生裝置130注入蝕刻電路板後之蝕刻液。 The liquid collection tank 120 is disposed below the liquid discharge device 110 for accommodating the etching liquid after etching the circuit board. The liquid collection tank 120 and the etching liquid regeneration device 130 inject the etching liquid after etching the circuit board into the etching liquid regeneration device 130 by the first liquid guiding tube 140 and the first pump 160a attached to the first liquid guiding tube 140.
當然,可於噴液裝置110與集液槽120之間設置輸送承載裝置(圖未示),以用於承載與傳送進行蝕刻之電路板。該輸送承載裝置可為複數平行設置之傳送滾輪,使得 電路板沿垂直於滾輪之延伸方向移動。 Of course, a transport carrier (not shown) may be disposed between the liquid ejecting apparatus 110 and the sump 120 for carrying and transporting the circuit board for etching. The conveying carrier device can be a plurality of conveying rollers arranged in parallel, so that The board moves in a direction perpendicular to the direction in which the roller extends.
蝕刻液再生裝置130包括依次設置之蝕刻液存儲塔131、再生反應塔132及再生液存儲塔133、連通於蝕刻液存儲塔131與再生反應塔132之間之第三導液管134、安裝於第三導液管134之第三泵160c、連通於再生反應塔132與再生液存儲塔133之間之第四導液管135及安裝於第四導液管135之第四泵160d。蝕刻液存儲塔131與集液槽120相互連通,用於將集液槽120內之進行蝕刻電路板後之蝕刻液藉由第一泵160a及第一導液管140注入蝕刻液存儲塔131,並使得蝕刻液存儲塔131存儲之舊液達到一預設體積。 The etching solution regenerating device 130 includes an etching liquid storage tower 131, a regeneration reaction tower 132, and a regenerating liquid storage tower 133 which are sequentially disposed, a third liquid guiding tube 134 which is connected between the etching liquid storage tower 131 and the regeneration reaction tower 132, and is attached to The third pump 160c of the third catheter 134, the fourth catheter 135 connected between the regeneration reaction tower 132 and the regenerant storage tower 133, and the fourth pump 160d attached to the fourth catheter 135. The etching liquid storage tower 131 and the liquid collecting tank 120 communicate with each other, and the etching liquid for etching the circuit board in the liquid collecting tank 120 is injected into the etching liquid storage tower 131 by the first pump 160a and the first liquid guiding tube 140, And the old liquid stored in the etching liquid storage tower 131 reaches a predetermined volume.
再生反應塔132與蝕刻液存儲塔131之底部藉由第三導液管134及第三泵160c相互連通,當蝕刻液存儲塔131內之蝕刻電路板後之蝕刻液達到預定體積時,控制第三泵160c使得蝕刻電路板後之蝕刻液藉由第三導液管134注入至再生反應塔132,並於再生反應塔132內對蝕刻電路板後之蝕刻液進行檢測並進行再生處理。再生反應塔132具有相對之頂端1321與底端1322。本實施例中,於頂端1321設置有水輸入管1323及再生劑輸入管1324,並且從頂端1321向再生反應塔132內安裝有攪拌器1325及偵測元件1326。於底端1322設置有排液管1327,用於將部分蝕刻電路板後之蝕刻液排出,以防止整個蝕刻系統100內之蝕刻液體積不斷增加。水輸入管1323與儲水裝置(圖未示)相連通,用於向再生反應塔132內注入水。再生劑輸入管1324與再生劑存儲裝置相連通,用於向再生反應 塔132內注入再生劑。偵測元件1326用於檢測再生反應塔132內注入之蝕刻電路板後之蝕刻液之密度並顯示再生反應塔132內溶液之需要偵測之成分之濃度,如過氧化氫或氫離子等。根據偵測之蝕刻電路板後之蝕刻液密度藉由分析計算確定排液管1327排出之舊液之體積與水輸入管1323注入之水之體積,以使得再生反應塔132內之溶液密度於要求之密度範圍。根據調整密度後之溶液中之偵測成分之濃度再計算得出加入再生劑之多少。攪拌器1325用於攪拌加入再生劑之蝕刻液,使得蝕刻液與再生劑充分混合並產生反應,使得蝕刻液被再生完全,得到成分均勻之再生處理後之蝕刻液。 The regeneration reaction tower 132 and the bottom of the etching liquid storage tower 131 are connected to each other by the third liquid guiding tube 134 and the third pump 160c. When the etching liquid after etching the circuit board in the etching liquid storage tower 131 reaches a predetermined volume, the control unit The three pump 160c causes the etching liquid after etching the circuit board to be injected into the regeneration reaction tower 132 through the third liquid guiding tube 134, and detects and regenerates the etching liquid after etching the circuit board in the regeneration reaction tower 132. The regeneration reaction column 132 has an opposite top end 1321 and a bottom end 1322. In the present embodiment, a water inlet pipe 1323 and a regenerant inlet pipe 1324 are provided at the tip end 1321, and a stirrer 1325 and a detecting element 1326 are attached to the regeneration reaction column 132 from the tip end 1321. A drain tube 1327 is disposed at the bottom end 1322 for discharging the etching liquid partially etched from the circuit board to prevent an increase in the volume of the etching liquid in the entire etching system 100. The water inlet pipe 1323 is in communication with a water storage device (not shown) for injecting water into the regeneration reaction column 132. The regenerant input tube 1324 is in communication with the regenerant storage device for regeneration reaction A regenerant is injected into the column 132. The detecting element 1326 is configured to detect the density of the etching liquid after the etching of the etching circuit board in the regeneration reaction tower 132 and to display the concentration of the component to be detected of the solution in the regeneration reaction tower 132, such as hydrogen peroxide or hydrogen ions. The volume of the old liquid discharged from the liquid discharge pipe 1327 and the volume of the water injected into the water input pipe 1323 are determined by analytical calculation based on the etched liquid density after the etched circuit board is detected, so that the solution density in the regeneration reaction column 132 is required. The range of densities. The amount of the regenerant added is calculated based on the concentration of the detected component in the solution after the density is adjusted. The agitator 1325 is used to stir the etching liquid to which the regenerant is added, so that the etching liquid and the regenerant are sufficiently mixed and reacted, so that the etching liquid is completely regenerated, and the etching liquid after the regeneration treatment of the uniform composition is obtained.
第四導液管135與第四泵160d用於將再生反應塔132再生處理後之蝕刻液送至再生液存儲塔133。 The fourth liquid conduit 135 and the fourth pump 160d are used to send the etching liquid after the regeneration reaction tower 132 is regenerated to the regeneration liquid storage tower 133.
再生液存儲塔133與再生反應塔132與噴管111均相連通,用於存儲再生反應塔132再生處理後蝕刻液,並將再生處理後之蝕刻液藉由第二導液管150及安裝於第二導液管150之第二泵160b供應至噴管111用於蝕刻電路板。 The regenerating liquid storage tower 133 is in communication with the regeneration reaction tower 132 and the nozzle 111, and is configured to store the etching liquid after the regenerative reaction tower 132 is regenerated, and the etching liquid after the regeneration treatment is installed on the second liquid guiding tube 150 and The second pump 160b of the second catheter 150 is supplied to the nozzle 111 for etching the circuit board.
當然,當集液槽120之容積較大時,蝕刻液再生裝置130亦可不具有蝕刻液存儲塔131,而直接將再生反應塔132與集液槽120相互連通,並藉由第一泵160a及第一導液管140將集液槽120蝕刻電路板後之蝕刻液向再生反應塔132注入一預定體積。另外,再生液存儲塔133亦可為相互連通之兩個,從而可存儲更多之再生處理後之蝕刻液,以滿足噴液裝置110消耗蝕刻液較快時之需要。 Of course, when the volume of the sump 120 is large, the etchant regeneration device 130 may not have the etchant storage tower 131, but directly connect the regeneration reaction tower 132 and the sump 120 to each other, and the first pump 160a and The first liquid guiding tube 140 injects the etching liquid after the liquid collecting tank 120 etches the circuit board into the regeneration reaction tower 132 by a predetermined volume. In addition, the regenerant liquid storage tower 133 may also be two communicating with each other, so that more etched liquid after the regeneration treatment can be stored to meet the needs of the liquid ejecting apparatus 110 when the etching liquid is consumed faster.
採用本技術方案提供之蝕刻系統進行時刻液之再生包括如下步驟:第一步,利用第一導液管140及第一泵160a將集液槽120內之蝕刻電路板後之蝕刻液注入至蝕刻液再生裝置130之再生反應塔132內。 The regeneration of the time liquid by using the etching system provided by the technical solution includes the following steps: First, the first liquid guiding tube 140 and the first pump 160a are used to inject the etching liquid after etching the circuit board in the liquid collecting tank 120 to the etching. The liquid regeneration device 130 is inside the regeneration reaction column 132.
本實施例中,利用第一導液管140及第一泵160a將集液槽120內預定體積之蝕刻電路板後之蝕刻液注入至蝕刻液存儲塔131內,然後再經過第三導液管134與第三泵160c將預定體積之蝕刻電路板後之蝕刻液注入再生反應塔132內。當蝕刻液再生裝置130不具有蝕刻液存儲塔131時,可將蝕刻電路板後之蝕刻液注入至再生反應塔132中。 In this embodiment, the first liquid guiding tube 140 and the first pump 160a are used to inject a predetermined volume of the etching liquid in the sump 120 into the etching liquid storage tower 131, and then pass through the third liquid guiding tube. The 134 and the third pump 160c inject a predetermined volume of the etching liquid after the etching of the circuit board into the regeneration reaction column 132. When the etching liquid regeneration device 130 does not have the etching liquid storage tower 131, the etching liquid after etching the circuit board can be injected into the regeneration reaction column 132.
第二步,對再生反應塔132內之蝕刻電路板後之蝕刻液進行再生處理。 In the second step, the etching liquid after etching the circuit board in the regeneration reaction column 132 is subjected to regeneration treatment.
首先,採用偵測元件1326偵測再生反應塔132內之蝕刻電路板後之蝕刻液,根據偵測之蝕刻電路板後之蝕刻液之密度將部分蝕刻後之舊液排出,並藉由水輸入管1323注入水以調整再生反應塔132內蝕刻液之密度。蝕刻電路板後之蝕刻液因為其中溶解有電路板銅層之銅,使得蝕刻電路板後之蝕刻液之密度大於未進行蝕刻之前之蝕刻液之密度。可理解,當蝕刻後之舊液之密度越大,其中含有之一價銅離子與二價銅離子之總濃度越大。為了保證再生後之蝕刻液中二價銅離子之含量於預定之範圍內,故需要將蝕刻液之密度控制於預定範圍內。本實施例中,藉由將部分蝕刻後舊液排出而加入水之方式來調整再 生反應塔132內蝕刻液之密度。 First, the detecting element 1326 is used to detect the etching liquid after the etching circuit board in the regeneration reaction tower 132, and the partially etched old liquid is discharged according to the density of the etching liquid after the etching of the detected circuit board, and is input by water. The tube 1323 is injected with water to adjust the density of the etching liquid in the regeneration reaction column 132. The etching liquid after etching the circuit board has a density of the etching liquid after etching the circuit board because the copper of the copper layer of the circuit board is dissolved therein, and the density of the etching liquid before the etching is not performed. It can be understood that the greater the density of the old liquid after etching, the greater the total concentration of the one-valent copper ion and the divalent copper ion. In order to ensure that the content of the divalent copper ions in the etched liquid after regeneration is within a predetermined range, it is necessary to control the density of the etching liquid within a predetermined range. In this embodiment, the water is added by discharging the partially etched old liquid to adjust The density of the etching solution in the reaction column 132 is generated.
然後,根據偵測元件1326偵測調整密度後之再生反應塔132內蝕刻液中偵測之特定成分之濃度,向蝕刻再生反應塔132內加入再生劑,使得再生劑與再生反應塔132內蝕刻液反應形成再生蝕刻液。藉由再生劑輸入管1324向再生反應塔132加入再生劑。本實施例中,加入之再生劑為氯化氫水溶液與過氧化氫,使得蝕刻電路板後之蝕刻液中之一價銅離子被氧化生成二價銅離子,從而保證了再生後之蝕刻液中含有之用於蝕刻電路板中之銅箔之二價銅離子濃度滿足要求。採用攪拌器1325對再生劑與再生反應塔132內蝕刻液進行攪拌,使得再生劑與再生反應塔132內蝕刻液充分反應,從而得到各組分之濃度滿足要求之再生後蝕刻液。 Then, according to the detection component 1326 detecting the concentration of the specific component detected in the etching liquid in the regeneration reaction tower 132 after the adjustment density is adjusted, the regenerant is added into the etching regeneration reaction tower 132 to etch the regenerant and the regeneration reaction tower 132. The liquid reacts to form a regenerating etchant. The regenerant is added to the regeneration reaction column 132 via the regenerant input pipe 1324. In this embodiment, the regenerant added is an aqueous hydrogen chloride solution and hydrogen peroxide, so that one of the copper ions in the etching solution after etching the circuit board is oxidized to form divalent copper ions, thereby ensuring the inclusion of the etched liquid after regeneration. The divalent copper ion concentration of the copper foil used to etch the circuit board satisfies the requirements. The regenerant and the etching liquid in the regeneration reaction column 132 are stirred by the agitator 1325, and the regenerant is sufficiently reacted with the etching liquid in the regenerating reaction column 132 to obtain a post-regeneration etching liquid having a concentration of each component satisfying the requirements.
第三步,將所述再生處理後之蝕刻液從再生反應塔132轉移至再生液存儲塔133內,以用於向噴液裝置110供應。 In the third step, the etchant after the regeneration treatment is transferred from the regeneration reaction column 132 to the regeneration liquid storage column 133 for supply to the liquid discharge device 110.
本技術方案提供之蝕刻系統,能夠將蝕刻電路板後之蝕刻液從集液槽內轉移到再生裝置內進行批量再生處理,再將批量再生處理後之成分均勻之蝕刻液用於進行後續之蝕刻,從而可避免直接於集液槽內直接進行再生後直接應用而使得之再生處理後之蝕刻液成分不均勻導致之蝕刻速率不穩定之問題。 The etching system provided by the technical solution can transfer the etching liquid after etching the circuit board from the liquid collecting tank to the recycling device for batch regeneration processing, and then use the etching liquid with uniform composition after the batch regeneration processing for subsequent etching. Therefore, it is possible to avoid the problem that the etching rate is unstable due to the uneven application of the etching liquid component after the regeneration treatment is directly applied directly to the inside of the sump.
綜上所述,本發明確已符合發明專利之要件,遂依法提出專利申請。惟,以上所述者僅為本發明之較佳實施方式,自不能以此限制本案之申請專利範圍。舉凡熟悉本 案技藝之人士援依本發明之精神所作之等效修飾或變化,皆應涵蓋於以下申請專利範圍內。 In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Familiar with this Equivalent modifications or variations made by those skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.
100‧‧‧蝕刻系統 100‧‧‧ etching system
110‧‧‧噴液裝置 110‧‧‧Liquid device
111‧‧‧噴管 111‧‧‧ nozzle
112‧‧‧噴口 112‧‧‧ spout
120‧‧‧集液槽 120‧‧ ‧ sump
130‧‧‧蝕刻液再生裝置 130‧‧‧etching fluid regeneration device
131‧‧‧蝕刻液存儲塔 131‧‧‧etching liquid storage tower
132‧‧‧再生反應塔 132‧‧‧Regeneration Tower
1321‧‧‧頂端 1321‧‧‧Top
1322‧‧‧底端 1322‧‧‧ bottom
1323‧‧‧水輸入管 1323‧‧‧Water input pipe
1324‧‧‧再生劑輸入管 1324‧‧‧Regenerant input tube
1325‧‧‧攪拌器 1325‧‧‧Agitator
1326‧‧‧偵測元件 1326‧‧‧Detection components
1327‧‧‧排液管 1327‧‧‧Draining tube
133‧‧‧再生液存儲塔 133‧‧‧Regeneration liquid storage tower
134‧‧‧第三導液管 134‧‧‧The third catheter
135‧‧‧第四導液管 135‧‧‧four catheter
140‧‧‧第一導液管 140‧‧‧First catheter
150‧‧‧第二導液管 150‧‧‧Second catheter
160a‧‧‧第一泵 160a‧‧‧First pump
160b‧‧‧第二泵 160b‧‧‧second pump
160c‧‧‧第三泵 160c‧‧‧ third pump
160d‧‧‧第四泵 160d‧‧‧fourth pump
圖1係本技術方案實施例提供之蝕刻系統之示意圖。 FIG. 1 is a schematic diagram of an etching system provided by an embodiment of the present technical solution.
100‧‧‧蝕刻系統 100‧‧‧ etching system
110‧‧‧噴液裝置 110‧‧‧Liquid device
111‧‧‧噴管 111‧‧‧ nozzle
112‧‧‧噴口 112‧‧‧ spout
120‧‧‧集液槽 120‧‧ ‧ sump
130‧‧‧蝕刻液再生裝置 130‧‧‧etching fluid regeneration device
131‧‧‧蝕刻液存儲塔 131‧‧‧etching liquid storage tower
132‧‧‧再生反應塔 132‧‧‧Regeneration Tower
1321‧‧‧頂端 1321‧‧‧Top
1322‧‧‧底端 1322‧‧‧ bottom
1323‧‧‧水輸入管 1323‧‧‧Water input pipe
1324‧‧‧再生劑輸入管 1324‧‧‧Regenerant input tube
1325‧‧‧攪拌器 1325‧‧‧Agitator
1326‧‧‧偵測元件 1326‧‧‧Detection components
1327‧‧‧排液管 1327‧‧‧Draining tube
133‧‧‧再生液存儲塔 133‧‧‧Regeneration liquid storage tower
134‧‧‧第三導液管 134‧‧‧The third catheter
135‧‧‧第四導液管 135‧‧‧four catheter
140‧‧‧第一導液管 140‧‧‧First catheter
150‧‧‧第二導液管 150‧‧‧Second catheter
160a‧‧‧第一泵 160a‧‧‧First pump
160b‧‧‧第二泵 160b‧‧‧second pump
160c‧‧‧第三泵 160c‧‧‧ third pump
160d‧‧‧第四泵 160d‧‧‧fourth pump
Claims (8)
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