TWM519872U - Apparatus for thin filming resist layer - Google Patents
Apparatus for thin filming resist layer Download PDFInfo
- Publication number
- TWM519872U TWM519872U TW104214911U TW104214911U TWM519872U TW M519872 U TWM519872 U TW M519872U TW 104214911 U TW104214911 U TW 104214911U TW 104214911 U TW104214911 U TW 104214911U TW M519872 U TWM519872 U TW M519872U
- Authority
- TW
- Taiwan
- Prior art keywords
- thin film
- barrier layer
- liquid
- substrate
- film processing
- Prior art date
Links
- 239000007788 liquid Substances 0.000 claims description 201
- 230000004888 barrier function Effects 0.000 claims description 168
- 239000010409 thin film Substances 0.000 claims description 160
- 239000000758 substrate Substances 0.000 claims description 91
- 238000007654 immersion Methods 0.000 claims description 70
- 239000010408 film Substances 0.000 claims description 64
- 238000000576 coating method Methods 0.000 claims description 25
- 239000011248 coating agent Substances 0.000 claims description 23
- 239000010410 layer Substances 0.000 description 159
- 239000000693 micelle Substances 0.000 description 72
- 238000000034 method Methods 0.000 description 41
- 239000000463 material Substances 0.000 description 31
- 230000015572 biosynthetic process Effects 0.000 description 28
- 229920005989 resin Polymers 0.000 description 25
- 239000011347 resin Substances 0.000 description 25
- 238000007598 dipping method Methods 0.000 description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 21
- 150000007514 bases Chemical class 0.000 description 15
- 150000001875 compounds Chemical class 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 239000007864 aqueous solution Substances 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 11
- 239000007921 spray Substances 0.000 description 11
- 238000005406 washing Methods 0.000 description 10
- -1 acrylic ester Chemical class 0.000 description 9
- 238000001035 drying Methods 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 239000003822 epoxy resin Substances 0.000 description 8
- 229920000647 polyepoxide Polymers 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 238000003860 storage Methods 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 5
- 239000000178 monomer Substances 0.000 description 5
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000002209 hydrophobic effect Effects 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 125000000641 acridinyl group Chemical class C1(=CC=CC2=NC3=CC=CC=C3C=C12)* 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910000288 alkali metal carbonate Inorganic materials 0.000 description 2
- 150000008041 alkali metal carbonates Chemical class 0.000 description 2
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 2
- 229910000318 alkali metal phosphate Inorganic materials 0.000 description 2
- 229910052910 alkali metal silicate Inorganic materials 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L calcium carbonate Substances [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 2
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 2
- 229960001231 choline Drugs 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- PAFZNILMFXTMIY-UHFFFAOYSA-N cyclohexylamine Chemical compound NC1CCCCC1 PAFZNILMFXTMIY-UHFFFAOYSA-N 0.000 description 2
- 230000036425 denaturation Effects 0.000 description 2
- 238000004925 denaturation Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000008235 industrial water Substances 0.000 description 2
- 239000003999 initiator Substances 0.000 description 2
- 239000011256 inorganic filler Substances 0.000 description 2
- 229910003475 inorganic filler Inorganic materials 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 229910000029 sodium carbonate Inorganic materials 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000008399 tap water Substances 0.000 description 2
- 235000020679 tap water Nutrition 0.000 description 2
- 229920002725 thermoplastic elastomer Polymers 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- CDUQMGQIHYISOP-RMKNXTFCSA-N (e)-2-cyano-3-phenylprop-2-enoic acid Chemical compound OC(=O)C(\C#N)=C\C1=CC=CC=C1 CDUQMGQIHYISOP-RMKNXTFCSA-N 0.000 description 1
- WBYWAXJHAXSJNI-VOTSOKGWSA-M .beta-Phenylacrylic acid Natural products [O-]C(=O)\C=C\C1=CC=CC=C1 WBYWAXJHAXSJNI-VOTSOKGWSA-M 0.000 description 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
- DVVXXHVHGGWWPE-UHFFFAOYSA-N 2-(dimethylamino)benzoic acid Chemical compound CN(C)C1=CC=CC=C1C(O)=O DVVXXHVHGGWWPE-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 description 1
- 239000004254 Ammonium phosphate Substances 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- WBYWAXJHAXSJNI-SREVYHEPSA-N Cinnamic acid Chemical compound OC(=O)\C=C/C1=CC=CC=C1 WBYWAXJHAXSJNI-SREVYHEPSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- IMROMDMJAWUWLK-UHFFFAOYSA-N Ethenol Chemical compound OC=C IMROMDMJAWUWLK-UHFFFAOYSA-N 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- NPKSPKHJBVJUKB-UHFFFAOYSA-N N-phenylglycine Chemical class OC(=O)CNC1=CC=CC=C1 NPKSPKHJBVJUKB-UHFFFAOYSA-N 0.000 description 1
- 206010034960 Photophobia Diseases 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 229940117913 acrylamide Drugs 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000007754 air knife coating Methods 0.000 description 1
- 229910052936 alkali metal sulfate Inorganic materials 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000001099 ammonium carbonate Substances 0.000 description 1
- 235000012501 ammonium carbonate Nutrition 0.000 description 1
- 229910000148 ammonium phosphate Inorganic materials 0.000 description 1
- 235000019289 ammonium phosphates Nutrition 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 150000008365 aromatic ketones Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000007611 bar coating method Methods 0.000 description 1
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N benzo-alpha-pyrone Natural products C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 1
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical class C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229930016911 cinnamic acid Natural products 0.000 description 1
- 235000013985 cinnamic acid Nutrition 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 235000001671 coumarin Nutrition 0.000 description 1
- 229960000956 coumarin Drugs 0.000 description 1
- LDHQCZJRKDOVOX-NSCUHMNNSA-N crotonic acid Chemical compound C\C=C\C(O)=O LDHQCZJRKDOVOX-NSCUHMNNSA-N 0.000 description 1
- 238000007766 curtain coating Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000007756 gravure coating Methods 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007757 hot melt coating Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 150000001261 hydroxy acids Chemical class 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000000113 methacrylic resin Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- WBYWAXJHAXSJNI-UHFFFAOYSA-N methyl p-hydroxycinnamate Natural products OC(=O)C=CC1=CC=CC=C1 WBYWAXJHAXSJNI-UHFFFAOYSA-N 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 150000002924 oxiranes Chemical class 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
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- 238000007747 plating Methods 0.000 description 1
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- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- UORVCLMRJXCDCP-UHFFFAOYSA-N propynoic acid Chemical compound OC(=O)C#C UORVCLMRJXCDCP-UHFFFAOYSA-N 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010802 sludge Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 150000003440 styrenes Chemical class 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Coating Apparatus (AREA)
- Materials For Photolithography (AREA)
Description
本創作有關阻障層之薄膜化裝置。 This creation relates to a thin filming device for a barrier layer.
隨著電氣及電子零件的小型化、輕量化、多功能化，對於以電路形成用的乾膜阻材(dry film resist)、焊料阻材(solder resist)為首的感光性樹脂(感光性材料)，為了對應於印刷配線板(printed wiring board、PWB)的高密度化而要求高解析度。這些感光性樹脂所致的圖像形成，係藉由在把感光性樹脂曝光後進行顯影的方式來進行。 A photosensitive resin (photosensitive material) including a dry film resist and a solder resist for circuit formation, in order to reduce the size, weight, and versatility of electrical and electronic components. In order to cope with the increase in density of a printed wiring board (PWB), high resolution is required. The image formation by these photosensitive resins is performed by developing a photosensitive resin and then developing it.
為了對應於印刷配線板的小型化、高功能化，感光性樹脂有薄膜化的傾向。在感光性樹脂中有塗布液體而使用的類型(液狀阻材、liquid resist)和乾膜類型(乾膜阻材)。最近，開發了15μm以下的厚度的乾膜阻材，其產品化正在推進。但是，在這樣的薄的乾膜阻材中，與以往的厚度的阻材相比，緊密接著性及對凹凸的追隨性不充分，有發生剝離或空隙(void)等的問題。 In order to reduce the size and function of the printed wiring board, the photosensitive resin tends to be thinned. Among the photosensitive resins, there are a type (liquid barrier, liquid resist) and a dry film type (dry film barrier) which are used for coating a liquid. Recently, a dry film barrier material having a thickness of 15 μm or less has been developed, and its productization is progressing. However, in such a thin dry film barrier material, the adhesion and the followability to the unevenness are insufficient as compared with the conventional thickness of the barrier material, and there is a problem that peeling or voids occur.
此外，作為用乾膜實現高解析度化的方法，有在曝光前將感光性樹脂上所具備的支承膜剝離、不夾著支承膜而曝光的方法。在此情況下，也有使光學工具(photo tool、光罩(photo mask))直接緊密接著在感光性樹脂上的情況。但是，由於感光性樹脂通常具有某種程度的黏著性，所以在使光學工具直接緊密接著在感光性樹脂上而進行曝光的情況下，緊密接著的光學工具的除去變得困難。此外，因感光性樹脂將光學工具污染、或者因將支承膜剝離而感光性樹脂暴露在大氣中的氧中等，光感度容易下降。 In addition, as a method of achieving high resolution by a dry film, there is a method of peeling off the support film provided on the photosensitive resin before exposure, and exposing it without interposing a support film. In this case, there is also a case where an optical tool (photo mask, photo mask) is directly attached to the photosensitive resin. However, since the photosensitive resin generally has a certain degree of adhesiveness, when the optical tool is directly exposed to the photosensitive resin and exposed, the removal of the closely-attached optical tool becomes difficult. Further, the photosensitive resin is likely to be contaminated by the optical resin, or the photosensitive resin is exposed to oxygen in the atmosphere by peeling off the support film, and the light sensitivity is liable to lower.
為了改善上述的問題，提出了在使用較厚的感光性樹脂的同時能夠實現高解析度的各種手段。例如，在藉由消去(subtractive)法製作導電圖案的方法中，公開了下述導電圖案的形成方法，其特徵在於，在絕緣層的單面或兩面上設置金屬層而成的層積基板上黏貼乾膜阻材而形成阻障層後，進行阻障層的薄膜化製程，接著，進行電路圖案的曝光製程、顯影製程、蝕刻製程(例如參照專利文獻1)。此外，在形成焊料阻材圖案的方法中，公開了下述焊料阻材圖案的形成方法，其特徵在於，在具有導電性圖案的電路基板上形成由焊料阻材構成的阻障層後，進行阻障層的薄膜化製程，接著進行圖案曝光製程，再次進行阻障層的薄膜化製程(例如參照專利文獻2及3)。 In order to improve the above problems, various means capable of achieving high resolution while using a thick photosensitive resin have been proposed. For example, in a method of producing a conductive pattern by a subtractive method, a method of forming a conductive pattern in which a metal layer is provided on one surface or both surfaces of an insulating layer is disclosed. After the dry film barrier material is adhered to form a barrier layer, a thin film formation process of the barrier layer is performed, and then a circuit pattern exposure process, a development process, and an etching process are performed (for example, refer to Patent Document 1). Further, in the method of forming a solder resist pattern, a method of forming a solder resist pattern described below is disclosed, in which a barrier layer composed of a solder resist material is formed on a circuit board having a conductive pattern, and then The thin film formation process of the barrier layer is followed by a pattern exposure process to further perform a thin film formation process of the barrier layer (see, for example, Patent Documents 2 and 3).
此外，在專利文獻4中公開了一種阻障層之薄膜化裝置，至少包括四個處理單元：薄膜化處理單元， 將形成有阻障層的基板浸漬(dip)到高濃度的鹼性水溶液(薄膜化處理液)中而將阻障層的成分的膠束(micelle)先不溶化，使其不易溶解擴散到處理液中；膠束除去處理單元，藉由膠束除去液噴霧而將膠束一下子溶解除去；水洗處理單元，將表面用水清洗；乾燥處理單元，將水洗水除去。 Further, Patent Document 4 discloses a thin film forming apparatus for a barrier layer, comprising at least four processing units: a thin film processing unit, The substrate on which the barrier layer is formed is diped into a high-concentration alkaline aqueous solution (thin film treatment liquid) to insolubilize the micelle of the component of the barrier layer, so that it is not easily dissolved and diffused into the treatment liquid. The micelle removal treatment unit dissolves the micelles by a spray of the micelle removal liquid; the water treatment unit cleans the surface with water; the drying treatment unit removes the water washing water.
使用圖4所示的概略剖視圖，對專利文獻4所公開的薄膜化裝置的一部分進行說明。在薄膜化處理單元11中，從投入口7投入形成了阻障層的基板3。基板3從浸漬槽2的入口輥對(也有簡稱為“入口輥對”的情況)4向浸漬槽2中運送，在浸漬在薄膜化處理液1中的狀態下在浸漬槽2內運送，進行阻障層的薄膜化處理。然後，將基板3向膠束除去處理單元12運送。在膠束除去處理單元12中，對於由膠束除去處理單元的運送輥29運送來的基板3，通過膠束除去液供給管20從膠束除去液用噴嘴21供給膠束除去液噴霧22。將基板3的阻障層在薄膜化處理單元11內部的浸漬槽2中藉由作為高濃度的鹼性水溶液的薄膜化處理液1，使阻障層成分的膠束對於薄膜化處理液1先不溶化。然後，以藉由膠束除去液噴霧22將膠束除去的方式，使阻障層薄膜化。 A part of the thin film forming apparatus disclosed in Patent Document 4 will be described using a schematic cross-sectional view shown in FIG. 4 . In the thin film processing unit 11, the substrate 3 on which the barrier layer is formed is introduced from the input port 7. The substrate 3 is transported from the inlet roller pair (also referred to simply as "inlet roller pair") 4 of the immersion tank 2 to the immersion tank 2, and is conveyed in the immersion tank 2 while being immersed in the thin film processing liquid 1, and is carried out. Thin film treatment of the barrier layer. Then, the substrate 3 is transported to the micelle removal processing unit 12. In the micelle removal processing unit 12, the micelle removal liquid spray 22 is supplied from the micelle removal liquid nozzle 21 through the micelle removal liquid supply pipe 20 to the substrate 3 conveyed by the conveyance roller 29 of the micelle removal processing unit. The barrier layer of the substrate 3 is made into a thin film processing liquid 1 which is a high-concentration alkaline aqueous solution in the immersion tank 2 inside the thin film processing unit 11, and the micelle of the barrier layer component is first treated with the thin film processing liquid 1 Insoluble. Then, the barrier layer is thinned by removing the micelles by the micelle removing liquid spray 22.
在圖4所示的阻障層的薄膜化裝置中，基板3以浸漬在浸漬槽2中的薄膜化處理液1中的狀態被運送。圖5是在阻障層的薄膜化裝置中浸漬槽的入口輥對4或者浸漬槽的出口輥對(有簡稱為“出口輥對”的情況)5的放 大概略剖視圖。在基板3通過入口輥對4或者出口輥對5之際，入口輥對4或者出口輥對5的上側輥被上抬基板3的厚度量，可以在上側輥與下側輥之間形成間隙24。而且，有薄膜化處理液1通過該間隙24向浸漬槽2外流出，浸漬槽2內的薄膜化處理液面下降的情況。由於在基板3的厚度大的情況下間隙24也增大，所以有流出的薄膜化處理液1的量增加的傾向，並有比薄膜化處理液面還下降的傾向。 In the thin film formation apparatus of the barrier layer shown in FIG. 4, the substrate 3 is conveyed in a state of being immersed in the thin film processing liquid 1 in the immersion tank 2. Fig. 5 is a view showing an inlet roller pair 4 of a immersion tank or an outlet roller pair (referred to as a "exit roller pair" for short) in a thin film forming apparatus of a barrier layer. Large schematic cutaway view. When the substrate 3 passes the inlet roller pair 4 or the exit roller pair 5, the upper roller of the inlet roller pair 4 or the outlet roller pair 5 is lifted by the thickness of the substrate 3, and a gap 24 may be formed between the upper roller and the lower roller. . Further, the thin film-forming treatment liquid 1 flows out of the immersion tank 2 through the gap 24, and the liquid level of the thin film treatment liquid in the immersion tank 2 is lowered. When the thickness of the substrate 3 is large, the gap 24 also increases. Therefore, the amount of the thin film-forming treatment liquid 1 that flows out tends to increase, and the liquid level of the thin film processing liquid tends to decrease.
對該薄膜化處理液面的下降產生的問題，詳細進行說明。在基板3未被投入的狀態下，從浸漬槽的入口輥對4和浸漬槽的出口輥對5溢流(overflow)的薄膜化處理液1的量少，能夠將浸漬槽2內的薄膜化處理液面維持在高的位置(圖6)。浸漬槽2內的薄膜化處理液面的位置只要是入口輥對4、出口輥對5以及浸漬槽內的運送輥對28中的上側的輥濕潤的程度即可，可高可低，但在基板3向浸漬槽2中運送的期間維持該位置不變者為佳。 The problem caused by the decrease in the liquid level of the thin film processing will be described in detail. In the state in which the substrate 3 is not loaded, the amount of the thin film processing liquid 1 overflowing from the inlet roller pair 4 of the immersion tank and the outlet roller pair 5 of the immersion tank is small, and the immersion tank 2 can be thinned. The treatment level is maintained at a high position (Figure 6). The position of the thin film processing liquid surface in the immersion tank 2 may be such that the inlet roller pair 4, the outlet roller pair 5, and the upper roller of the transport roller pair 28 in the immersion tank are wetted, and may be high or low, but It is preferable that the position is maintained during the period in which the substrate 3 is transported into the immersion tank 2.
若形成了阻障層的基板3通過入口輥對4而向裝有薄膜化處理液1的浸漬槽2中運送的話，則入口輥對4的上側輥被抬起，薄膜化處理液1從形成在上側輥與下側輥之間的間隙24向浸漬槽2外流出，薄膜化處理液面下降(圖7)。浸漬槽2內的薄膜化處理液面的下降取決於向浸漬槽2外的流出量和向浸漬槽2的循環供給量，在前者多的情況下，薄膜化處理液面在基板3的運送同時 逐漸下降(圖8)。圖7以及圖8中的薄膜化處理液面比圖6中的薄膜化處理液面低，但由於處於基板3上表面的阻障層表面之上，所以處於基板3被薄膜化處理液1完全浸漬的狀態。但是，處於基板3上表面的阻障層表面的薄膜化處理液1的液膜逐漸變薄。在阻障層表面為疏水性的情況下，該液膜與阻障層表面的親和性降低，薄膜化處理液1在阻障層表面流動，有薄膜化處理液1的覆蓋量不均勻的情況。若薄膜化處理液1的覆蓋量多，則阻障層的成分的膠束化速度加快，相反，若薄膜化處理液1的覆蓋量少，則膠束化速度變慢。因此，若薄膜化處理液1的覆蓋量不均勻的話，則有薄膜化的阻障層的厚度不均勻的情況。 When the substrate 3 on which the barrier layer is formed is transported through the inlet roller pair 4 to the immersion tank 2 containing the thin film processing liquid 1, the upper roller of the inlet roller pair 4 is lifted, and the thin film forming liquid 1 is formed. The gap 24 between the upper roller and the lower roller flows out of the immersion tank 2, and the liquid level of the thin film is lowered (Fig. 7). The lowering of the thin film formation liquid surface in the immersion tank 2 depends on the amount of outflow to the outside of the immersion tank 2 and the amount of circulation to the immersion tank 2, and in the case where the former is large, the thin film processing liquid surface is transported on the substrate 3 at the same time. Gradually decreased (Figure 8). The thin film processing liquid surface in FIGS. 7 and 8 is lower than the thin film processing liquid surface in FIG. 6, but since the substrate 3 is on the surface of the barrier layer on the upper surface of the substrate 3, the thin film forming liquid 1 is completely completed on the substrate 3. The state of the impregnation. However, the liquid film of the thin film processing liquid 1 on the surface of the barrier layer on the upper surface of the substrate 3 is gradually thinned. When the surface of the barrier layer is hydrophobic, the affinity between the liquid film and the surface of the barrier layer is lowered, and the thin film processing liquid 1 flows on the surface of the barrier layer, and the coverage of the thin film processing liquid 1 is uneven. . When the coating amount of the thin film processing liquid 1 is large, the micelleization speed of the component of the barrier layer is increased. Conversely, if the coating amount of the thin film processing liquid 1 is small, the micelleization speed is slow. Therefore, if the coverage of the thin film processing liquid 1 is not uniform, the thickness of the thinned barrier layer may be uneven.
進而，在相對於運送方向，從入口輥對4到出口輥對5的長度比基板3的尺寸短的情況下，在入口輥對4和出口輥對5的兩方上，上側輥被抬起，同時薄膜化處理液1從形成在上側輥與下側輥之間的間隙24流出，浸漬槽2內的薄膜化處理液面進一步下降(圖9)。在圖9中，在基板3上表面的阻障層表面上，薄膜化處理液1在運送的中途消失。也就是說，相對於基板3的運送方向，越接近後端，基板3上表面的阻障層表面上的薄膜化處理液1的覆蓋量越少，有薄膜化的阻障層的厚度減少的情況。 Further, in the case where the length from the inlet roller pair 4 to the outlet roller pair 5 is shorter than the size of the substrate 3 with respect to the conveying direction, on both sides of the inlet roller pair 4 and the outlet roller pair 5, the upper roller is lifted up At the same time, the thin film processing liquid 1 flows out from the gap 24 formed between the upper roll and the lower roll, and the film forming liquid level in the dipping tank 2 is further lowered (FIG. 9). In FIG. 9, on the surface of the barrier layer on the upper surface of the substrate 3, the thin film processing liquid 1 disappears in the middle of transportation. That is, the closer to the rear end with respect to the transport direction of the substrate 3, the smaller the coverage of the thin film-forming treatment liquid 1 on the surface of the barrier layer on the upper surface of the substrate 3, and the thickness of the thinned barrier layer is reduced. Happening.
這樣，薄膜化的阻障層的厚度變得不均勻，如果在薄膜化後的阻障層中有厚度薄的部分，則在消去法 的導電圖案形成中成為電路的斷線的原因，在焊料阻材的圖案形成中成為耐候性下降的原因，有哪種都帶來生產的成品率的下降的問題。 Thus, the thickness of the thinned barrier layer becomes uneven, and if there is a thin portion in the barrier layer after the thin film formation, the elimination method is used. In the formation of the conductive pattern, the disconnection of the circuit is caused, and the weather resistance is lowered in the pattern formation of the solder resist material, and any of them causes a problem of a decrease in the yield of production.
[專利文獻1]國際公開第2009/096438號手冊 [Patent Document 1] International Publication No. 2009/096438
[專利文獻2]日本特開2011-192692號專利公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2011-192692
[專利文獻3]國際公開第2012/043201號手冊 [Patent Document 3] International Publication No. 2012/043201
[專利文獻4]日本特開2012-27299號專利公報 [Patent Document 4] Japanese Patent Laid-Open Publication No. 2012-27299
本創作的課題是提供一種阻障層的薄膜化裝置，在能夠解決析像性和追隨性的問題的阻材圖案形成用的阻障層的薄膜化裝置中，經由將基板上表面的阻障層表面的薄膜化處理液的覆蓋量不均勻的問題抑制在最小限度的方式，能夠使薄膜化的阻障層的厚度均勻。 The object of the present invention is to provide a thin film forming apparatus for a barrier layer, and to provide a barrier layer for forming a barrier layer for a problem of resolution and followability, by blocking a surface of the substrate. The problem that the coverage of the thin film forming treatment liquid on the layer surface is uneven is suppressed to a minimum, and the thickness of the thinned barrier layer can be made uniform.
本創作者們發現，藉由下述技術方案，能夠解決這些課題。 The creators found that these problems can be solved by the following technical solutions.
(1)一種阻障層的薄膜化裝置，具備藉由薄 膜化處理液使阻障層中的成分膠束化的薄膜化處理單元；其特徵在於：該薄膜化處理單元具有用於向基板下表面的阻障層賦予薄膜化處理液的浸漬槽；設有用於通過輥塗敷(roll coating)向基板上表面的阻障層賦予薄膜化處理液的塗敷輥(coating roll)。 (1) A thin film forming device of a barrier layer, provided by thin a thin film processing unit which micelizes a component in a barrier layer; the thin film processing unit has a dipping tank for imparting a thin film processing liquid to a barrier layer on a lower surface of the substrate; There is a coating roll for imparting a film-forming treatment liquid to a barrier layer on the upper surface of the substrate by roll coating.
(2)如上述(1)所記載的阻障層的薄膜化裝置，其中，設有多個塗敷輥，該塗敷輥彼此的間隔W相對於塗敷輥的半徑r為2r<W≦2πr。 (2) The thin film formation device of the barrier layer according to the above (1), wherein a plurality of application rollers are provided, and the interval W between the application rollers is 2r < W with respect to the radius r of the application roller. 2πr.
根據本創作，能夠提供一種阻障層的薄膜化裝置，在能夠解決析像性和追隨性的問題的阻材圖案形成用的阻障層的薄膜化裝置中，經由將基板上表面的阻障層表面的薄膜化處理液的覆蓋量不均勻的問題抑制在最小限度的方式，能夠使薄膜化的阻障層的厚度均勻。 According to the present invention, it is possible to provide a thin film forming apparatus for a barrier layer, and a barrier film for forming a barrier layer for forming a barrier material pattern capable of solving the problem of resolution and followability, by blocking the upper surface of the substrate The problem that the coverage of the thin film forming treatment liquid on the layer surface is uneven is suppressed to a minimum, and the thickness of the thinned barrier layer can be made uniform.
1‧‧‧薄膜化處理液(浸漬槽) 1‧‧‧filming solution (dipping tank)
2‧‧‧浸漬槽 2‧‧‧dipping tank
3‧‧‧基板 3‧‧‧Substrate
4‧‧‧浸漬槽的入口輥對 4‧‧‧Inlet roller pair of dipping tank
5‧‧‧浸漬槽的出口輥對 5‧‧‧Extraction roller pair of dipping tank
6‧‧‧邊界部的運送輥對 6‧‧‧Transport roller pair at the boundary
7‧‧‧投入口 7‧‧‧ Input
8‧‧‧浸漬槽的塗敷輥 8‧‧‧Application roller for dipping tank
9‧‧‧浸漬槽的運送輥 9‧‧‧Draining roller
10‧‧‧膠束除去液 10‧‧‧ micelle removal solution
11‧‧‧薄膜化處理單元 11‧‧‧Thin film processing unit
12‧‧‧膠束除去處理單元 12‧‧‧ micelle removal processing unit
13‧‧‧薄膜化處理液貯藏容器 13‧‧‧Thin film processing liquid storage container
14‧‧‧薄膜化處理液吸入口 14‧‧‧Thin film treatment liquid inlet
15‧‧‧薄膜化處理液供給管(浸漬槽) 15‧‧‧Thin film processing liquid supply pipe (dipping tank)
16‧‧‧薄膜化處理液回收管 16‧‧‧Thin film treatment liquid recovery pipe
17‧‧‧薄膜化處理液排放管 17‧‧‧Finishing liquid discharge pipe
18‧‧‧膠束除去液貯藏容器 18‧‧‧ micelle removal fluid storage container
19‧‧‧膠束除去液吸入口 19‧‧‧ micelle removal liquid inlet
20‧‧‧膠束除去液供給管 20‧‧‧ micelle removal liquid supply tube
21‧‧‧膠束除去液用噴嘴 21‧‧‧Machine beam removal nozzle
22‧‧‧膠束除去液噴霧 22‧‧‧ micelle removal spray
23‧‧‧膠束除去液排放管 23‧‧‧ micelle removal liquid discharge pipe
24‧‧‧間隙 24‧‧‧ gap
25‧‧‧薄膜化處理液供給管(塗敷輥供給用) 25‧‧‧Finishing solution supply pipe (for coating roller supply)
26‧‧‧薄膜化處理液用噴嘴(塗敷輥供給用) 26‧‧‧The nozzle for thin film processing liquid (for coating roller supply)
27‧‧‧薄膜化處理液(塗敷輥供給用) 27‧‧‧Finishing solution (for coating roller supply)
28‧‧‧浸漬槽內的運送輥對 28‧‧‧Transport roller pair in the dip tank
29‧‧‧膠束除去單元內的運送輥 29‧‧‧Transport roller in the micelle removal unit
r‧‧‧浸漬槽的塗敷輥的半徑 r‧‧‧The radius of the coating roller of the dip tank
W‧‧‧浸漬槽的塗敷輥彼此的間隔 W‧‧‧The spacing of the applicator rolls of the dip tank
[圖1]是表示在本創作的阻障層的薄膜化裝置中，浸漬槽的輥配置的放大概略剖視圖。 FIG. 1 is an enlarged schematic cross-sectional view showing a roller arrangement of a immersion tank in the thin film forming apparatus of the barrier layer of the present invention.
[圖2]是表示在本創作的阻障層的薄膜化裝置中，浸漬槽的輥配置的放大概略剖視圖。 FIG. 2 is an enlarged schematic cross-sectional view showing a roller arrangement of a dipping tank in the thin film forming apparatus of the barrier layer of the present invention.
[圖3]是表示在本創作的阻障層的薄膜化裝置中，浸 漬槽的輥配置的放大概略剖視圖。 [Fig. 3] is a view showing a thinning device of the barrier layer of the present invention. An enlarged schematic cross-sectional view of the roller arrangement of the stain groove.
[圖4]是表示先前技術的阻障層的薄膜化裝置的一部分的概略剖視圖。 Fig. 4 is a schematic cross-sectional view showing a part of a thin film forming apparatus of a barrier layer of the prior art.
[圖5]是在阻障層的薄膜化裝置中，浸漬槽的入口輥對或者出口輥對的放大概略剖視圖。 Fig. 5 is an enlarged schematic cross-sectional view showing an inlet roller pair or an outlet roller pair of a dipping tank in a thin film forming apparatus of a barrier layer.
[圖6]是表示在先前技術的阻障層的薄膜化裝置中，浸漬槽內的薄膜化處理液面變化的概略剖視圖。 FIG. 6 is a schematic cross-sectional view showing a change in the liquid level of the thin film processing in the immersion tank in the thin film forming apparatus of the barrier layer of the prior art.
[圖7]是表示在先前技術的阻障層的薄膜化裝置中，浸漬槽內的薄膜化處理液面變化的概略剖視圖。 FIG. 7 is a schematic cross-sectional view showing a change in the liquid level of the thin film forming treatment in the immersion tank in the thin film forming apparatus of the barrier layer of the prior art.
[圖8]是表示在先前技術的阻障層的薄膜化裝置中，浸漬槽內的薄膜化處理液面變化的概略剖視圖。 FIG. 8 is a schematic cross-sectional view showing a change in the liquid level of the thin film processing in the immersion tank in the thin film forming apparatus of the barrier layer of the prior art.
[圖9]是表示在先前技術的阻障層的薄膜化裝置中，浸漬槽內的薄膜化處理液面變化的概略剖視圖。 FIG. 9 is a schematic cross-sectional view showing a change in the liquid level of the thin film forming treatment in the immersion tank in the thin film forming apparatus of the barrier layer of the prior art.
有關本創作的薄膜化處理液進行的阻障層的薄膜化製程是包括藉由薄膜化處理液將阻障層成分的膠束先不溶化、使其不易溶解擴散到處理液中的薄膜化處理，和藉由膠束除去液噴霧一下子將膠束溶解除去的膠束除去處理的製程。進而還可以包括：將在膠束處理中沒有完全除去的阻障層表面的膠束或殘留的薄膜化處理液及膠束除去液藉由水洗沖洗的水洗處理、將水洗水除去的乾燥處理。 The thin film formation process of the barrier layer by the thin film processing liquid of the present invention includes a film formation process in which the micelle of the barrier layer component is insolubilized by the thin film treatment liquid to make it difficult to dissolve and diffuse into the treatment liquid. And a process of removing the micelles from the micelles by spraying the micelles to remove the micelles. Further, it may further include a drying treatment of removing the micelles on the surface of the barrier layer which is not completely removed in the micelle treatment, the residual thinning treatment liquid and the micelle removing liquid by a water washing treatment, and removing the water washing water.
阻障層的薄膜化處理藉由使阻障層浸漬(dip)在薄膜化處理液中進行。基板兩面的阻障層被浸漬者為佳，但若在基板的運送中途薄膜化處理液面下降，則有不再浸漬到基板上表面的阻障層的情況。因此，基板上表面的阻障層的薄膜化處理除了浸漬在薄膜化處理液中之外，也藉由將薄膜化處理液輥塗敷的方式而進行。浸漬處理不易在薄膜化處理液中發生氣泡，輥塗敷能夠保持阻障層表面的薄膜化處理液的覆蓋量均勻。 The thin film formation treatment of the barrier layer is carried out by dipping the barrier layer in the thin film treatment liquid. It is preferable that the barrier layer on both surfaces of the substrate is impregnated. However, if the liquid level of the thin film is lowered during the transport of the substrate, there is a case where the barrier layer is not immersed in the upper surface of the substrate. Therefore, the thin film formation treatment of the barrier layer on the upper surface of the substrate is carried out by immersing the film formation treatment liquid in addition to the thin film formation treatment liquid. The immersion treatment is less likely to cause bubbles in the film-forming treatment liquid, and the roll coating can maintain a uniform coverage of the film-forming treatment liquid on the surface of the barrier layer.
在本創作中，薄膜化後的阻障層的厚度由形成在基板上的阻障層的厚度和阻障層被薄膜化的量決定。另外，在本創作中，能在0.01~500μm的範圍自由地調整抗蝕層的薄膜化量。 In the present creation, the thickness of the thinned barrier layer is determined by the thickness of the barrier layer formed on the substrate and the amount by which the barrier layer is thinned. Further, in the present creation, the amount of thinning of the resist layer can be freely adjusted in the range of 0.01 to 500 μm.
作為阻材能夠使用鹼性顯影型阻材。此外，無論是液狀阻材還是乾膜阻材，只要是能夠藉由高濃度的鹼性水溶液(薄膜化處理液)薄膜化、且能夠借助作為比薄膜化處理液還低濃度的鹼性水溶液的顯影液而顯影的阻材則可以使用任意的阻材。鹼性顯影型的阻材包含光交聯性樹脂成分。光交聯性樹脂成分例如含有鹼性可溶性樹脂、光聚合性化合物、光聚合起始劑等。此外也可以含有環氧樹脂、熱硬化劑、無機填料等。 As the barrier material, an alkali development type barrier material can be used. In addition, the liquid barrier material or the dry film barrier material can be thinned by a high-concentration alkaline aqueous solution (thin-film processing liquid), and can be used as an alkaline aqueous solution having a lower concentration than the thin film processing liquid. Any hindrance material can be used as the resist material developed by the developer. The alkali developing type barrier material contains a photocrosslinkable resin component. The photo-crosslinkable resin component contains, for example, an alkali-soluble resin, a photopolymerizable compound, a photopolymerization initiator, and the like. Further, an epoxy resin, a heat hardener, an inorganic filler or the like may be contained.
作為鹼性可溶性樹脂，可以舉出例如丙烯酸(acrylic)系樹脂、甲基丙烯(methacrylic)系樹脂、苯乙烯(styrene)系樹脂、環氧(epoxy)系樹脂、醯胺(polyamide)系樹脂、醯胺環氧(polyamide epoxy)系樹脂、醇酸(alkyd)系樹脂、酚(phenol)系樹脂的有機高分子。作為鹼性可溶性樹脂，聚合(自由基聚合等)具有乙烯性不飽和雙鍵結結的單體(聚合性單體)而得到的樹脂者為佳。這些向鹼性水溶液可溶的聚合體既可以單獨使用，也可以組合兩種以上使用。 Examples of the alkali-soluble resin include an acrylic resin, a methacrylic resin, a styrene resin, an epoxy resin, and a polyamide resin. An organic polymer of a polyamide epoxy resin, an alkyd resin, or a phenol resin. As the alkali-soluble resin, a resin obtained by polymerization (such as a radical polymerization) having a monomer (polymerizable monomer) having an ethylenically unsaturated double bond is preferable. These polymers which are soluble in an aqueous alkaline solution may be used singly or in combination of two or more.
作為具有乙烯性不飽和雙鍵結的單體，例如可以舉出苯乙烯衍生物、丙烯醯胺(acryl amide)、丙烯腈(acrylonitrile)、乙烯醇(vinyl alcohol)的酯類；(甲基)丙烯酸((meth)acrylic acid)、(甲基)丙烯酸酯((meth)acrylic ester、(meth)acrylate)等的(甲基)丙烯酸系單體；馬來酸(maleic acid)系單體；富馬酸(fumaric acid)、肉桂酸(cinnamic acid)、α-氰化肉桂酸(α-cyanocinnamic acid)、衣康酸(itaconic acid)、巴豆酸(crotonic acid)、丙炔酸(propiolic acid)等。 Examples of the monomer having an ethylenically unsaturated double bond include a styrene derivative, an acryl amide, an acrylonitrile, and an alcohol of vinyl alcohol; (methyl) a (meth)acrylic monomer such as (meth)acrylic acid, (meth)acrylic ester, (meth)acrylate, or the like; maleic acid monomer; rich Fumaric acid, cinnamic acid, α-cyanocinnamic acid, itaconic acid, crotonic acid, propiolic acid, etc. .
作為光聚合性化合物，可以舉出例如令多價乙醇與α,β-不飽和羥酸反應而得到的化合物；雙酚A(bisphenol A)系(甲基)丙烯酸酯((meth)acrylate)化合物；令縮水甘油(Glycidyl)基含有化合物與α,β-不飽和羥酸反應而得到的化合物；在分子內具有尿烷(urethane)鍵的(甲基)丙烯酸酯化合物等的尿烷單體；γ-氯-β-羥丙 基-β’-(甲基)丙烯醯氧乙基-o-酞酸酯(γ-chloro-β-hydroxypropyl-β’-(meth)acryloyloxyethyl-o-phthalate)、β-羥烷基-β’-(甲基)丙烯醯氧烷基-o-酞酸酯(β-hydroxyalkyl-β’-(meth)acryloyloxyalkyl-o-phthalate)等的酞酸系化合物；(甲基)丙烯酸烷基酯(alkyl(meth)acrylate)；壬基苯氧基聚乙烯氧基(甲基)丙烯酸酯(nonylphenoxypolyethyleneoxy(meth)acrylate)等的EO、PO變性壬苯基(甲基)丙烯酸酯等。這裡，EO及PO表示環氧乙烷及環氧丙烷，EO變性後的化合物是具有環氧乙烷基的塊構造的化合物，PO變性後的化合物是具有環氧丙烷基的塊構造的化合物。這些光聚合性化合物可以單獨使用，或者也可以組合2種以上來使用。 The photopolymerizable compound may, for example, be a compound obtained by reacting polyvalent ethanol with an α,β-unsaturated hydroxy acid; or a bisphenol A (meth)acrylate compound. a compound obtained by reacting a Glycidyl group with a compound, and a (meth) acrylate compound having a urethane bond in a molecule; Γ-chloro-β-hydroxypropyl --β--(methyl) propylene-oxypropyl-β-(meth)acryloyloxyethyl-o-phthalate, β-hydroxyalkyl-β' a phthalic acid-based compound such as (meth)acryloyloxyalkyl-o-phthalate; alkyl (meth) acrylate (alkyl) (meth)acrylate); EO, PO, decyl phenyl (meth) acrylate, etc., such as nonylphenoxypolyethyleneoxy (meth)acrylate. Here, EO and PO represent ethylene oxide and propylene oxide, and the compound after EO denaturation is a compound having a block structure of an oxirane group, and the compound after PO denaturation is a compound having a block structure of an oxypropylene group. These photopolymerizable compounds may be used singly or in combination of two or more.
作為光聚合引發劑，可以舉出芳香族酮類、醌類、安息香(benzoin)化合物、2,4,5-三芳基咪唑二聚體(2,4,5-triaryl imidazole dimer)、吖啶(acridine)衍生物、N-苯甘氨酸(N-phenylglycine)衍生物、香豆素(coumarin)系化合物等。上述2,4,5-三芳基咪唑二聚體中的2個2,4,5-三芳基咪唑的芳基的置換基可以是相同且對稱的化合物，也可以是不同而非對稱的化合物。此外，也可以如二乙基噻噸酮(diethylthioxantone)和對二甲氨基苯甲酸(dimethylaminobenzoic acid)的組合那樣將噻噸酮(thioxantone)系化合物和叔胺化合物組合。這些可以單獨、或者組合2種以上使用。 Examples of the photopolymerization initiator include aromatic ketones, anthraquinones, benzoin compounds, 2,4,5-triaryl imidazole dimers, and acridines. Acridine) derivative, N-phenylglycine derivative, coumarin compound, and the like. The substituents of the aryl groups of the two 2,4,5-triarylimidazoles in the above 2,4,5-triarylimidazole dimer may be the same and symmetric compounds, or may be different and not symmetric compounds. Further, a thioxantone-based compound and a tertiary amine compound may be combined as in the combination of diethylthioxantone and dimethylaminobenzoic acid. These can be used individually or in combination of 2 or more types.
環氧樹脂有時作為固化劑來使用。透過與鹼 性可溶性樹脂的羧酸與環氧反應而架橋，謀求耐熱性、耐藥性的特性的提高，但羧酸與環氧樹脂即使在常溫下也進行反應，所以保存穩定性不好，一般情況下，鹼性顯影型焊料阻材取使用前要混合的2液性的形態的情況很多。而且，時也使用無機填料，舉出可以例如滑石、硫酸鋇、二氧化矽等。 Epoxy resins are sometimes used as curing agents. Permeation and alkali The carboxylic acid of the soluble resin reacts with the epoxy and bridges to improve the heat resistance and chemical resistance. However, the carboxylic acid and the epoxy resin react even at normal temperature, so the storage stability is not good. The alkaline developing type solder resist material is often used in a two-liquid form to be mixed before use. Further, an inorganic filler is also used, and for example, talc, barium sulfate, cerium oxide or the like can be mentioned.
在基板的表面形成阻障層的方法可以是任意方法，例如可以舉出網印(screen printing)法、輥塗敷(roll coating)法、噴塗(spray coating)法、浸漬(dip)法、簾塗(CURTAIN COATING)法、棒塗(bar coating)法、氣刀塗敷(air knife coating)法、熱熔塗敷(hot-melt coating)法、凹印塗敷(gravure coating)法、刷毛塗敷(brush coating)法、膠印印刷(offset printing)法。在乾膜阻材的情況下，使用層疊(laminating)法者為佳。 The method of forming the barrier layer on the surface of the substrate may be any method, and examples thereof include a screen printing method, a roll coating method, a spray coating method, a dip method, and a curtain. CURTAIN COATING method, bar coating method, air knife coating method, hot-melt coating method, gravure coating method, brush coating Brush coating method, offset printing method. In the case of a dry film barrier material, it is preferred to use a laminating method.
作為基板，能夠舉出印刷配線板用基板、引線框架(lead frame)用基板；加工印刷配線板用基板或引線框架用基板而得到的電路基板。 Examples of the substrate include a printed wiring board substrate, a lead frame substrate, and a circuit board obtained by processing a printed wiring board substrate or a lead frame substrate.
作為印刷配線板用基板，例如可以舉出撓性基板、剛性基板。 Examples of the substrate for a printed wiring board include a flexible substrate and a rigid substrate.
撓性基板的絕緣層的厚度為5~125μm，在其兩面或者單面設置1~35μm的金屬層而成為層積基板， 可撓性大。絕緣層的材料通常使用聚醯亞胺、聚醯胺(polyamide)、聚苯硫醚(polyphenylene sulfide)、聚對苯二甲酸乙二醇脂(polyethylene terephthalate)、液晶聚合物等。在絕緣層上具有金屬層的材料可以使用藉由下述等的方法製造的材料：利用黏合劑貼合的黏合法、在金屬箔上塗布樹脂液的鑄造(casting)法、在利用濺鍍(sputtering)及蒸鍍(deposition)法形成在樹脂薄膜上的厚度數nm的薄的導電層(種子層)上利用電鍍形成金屬層的濺射/電鍍法，利用熱衝壓(hot pressing)而貼付的層疊法等的任意一個。作為金屬層的金屬能夠使用銅、鋁、銀、鎳、鉻、或者這些的合金等的任意金屬，但一般為銅。 The insulating layer of the flexible substrate has a thickness of 5 to 125 μm, and a metal layer of 1 to 35 μm is provided on both surfaces or a single surface to form a laminated substrate. High flexibility. The material of the insulating layer is usually polyimine, polyamide, polyphenylene sulfide, polyethylene terephthalate, liquid crystal polymer or the like. As the material having a metal layer on the insulating layer, a material produced by a method of bonding with a binder, a casting method of coating a resin liquid on a metal foil, and sputtering using Sputtering/deposition method is a sputtering/electroplating method in which a metal layer is formed by plating on a thin conductive layer (seed layer) having a thickness of several nm on a resin film, and is attached by hot pressing. Any one of the lamination method and the like. As the metal of the metal layer, any metal such as copper, aluminum, silver, nickel, chromium, or an alloy of these can be used, but it is generally copper.
作為剛性基板可以舉出下述層積基板：在紙基材或者玻璃基材上層積浸漬了環氧樹脂或者酚樹脂等的絕緣性基板而作為絕緣層，在其單面或者兩面載置金屬箔，利用加熱及加壓進行層積而設置金屬層。此外，可以舉出在內層配線圖案加工後層積預成型料、金屬箔等而製作的多層用的密封板、具有貫通孔或非貫通孔的多層板。根據厚度為60μm~3.2mm且作為印刷配線板的最終使用形態而選定其材質和厚度。作為金屬層的材料可以舉出銅、鋁、銀、金等，但一般為銅。這些印刷配線板用基板的例子記載於《印刷電路技術便覽-第二版-》((社)印刷電路學會編，1987年刊，日刊工業新聞社發刊)及《多層印刷電路手冊》(J.A.Scarlett編，1992年刊， (株)近代化學社發刊)。 The rigid substrate is a laminated substrate in which an insulating substrate such as an epoxy resin or a phenol resin is laminated on a paper substrate or a glass substrate to form an insulating layer, and a metal foil is placed on one or both sides thereof. The metal layer is provided by lamination by heating and pressurization. In addition, a multilayer sealing plate produced by laminating a prepreg, a metal foil, or the like after processing the inner layer wiring pattern, and a multilayer plate having through holes or non-through holes may be mentioned. The material and thickness are selected in accordance with the thickness of 60 μm to 3.2 mm as the final use form of the printed wiring board. Examples of the material of the metal layer include copper, aluminum, silver, gold, and the like, but copper is generally used. Examples of the substrate for printed wiring boards are described in "Printed Circuit Technology Handbook - Second Edition -" (edited by Society of Printed Circuits, 1987, published by Nikkan Kogyo Shimbun) and "Multilayer Printed Circuit Handbook" (JAScarlett) Edited, 1992, (published by the modern chemical society)
作為引線框架用基板能夠舉出鐵鎳合金、銅系合金等的基板。 Examples of the substrate for the lead frame include a substrate such as an iron-nickel alloy or a copper-based alloy.
電路基板是在絕緣性基板上形成有用於連接半導體晶片等的電子零件的連接墊的基板。連接墊是利用銅等金屬所構成。此外，在電路基板上也可以形成導體配線。製作電路基板的方法例如可以舉出消去法、半添加(semi-additive)法、添加(additive)法。在消去法中，例如在上述的印刷配線板用基板上形成蝕刻阻材圖案，進行曝光製程、顯影製程、蝕刻製程、阻材剝離製程而製作電路基板。 The circuit board is a board in which a connection pad for connecting electronic components such as a semiconductor wafer is formed on an insulating substrate. The connection pad is made of a metal such as copper. Further, a conductor wiring can also be formed on the circuit board. Examples of the method of producing the circuit board include an erasing method, a semi-additive method, and an additive method. In the erasing method, for example, an etching resist pattern is formed on the above-mentioned substrate for a printed wiring board, and an exposure process, a developing process, an etching process, and a barrier peeling process are performed to fabricate a circuit board.
本創作的薄膜化裝置是具備藉由薄膜化處理液1使阻障層成分膠束化的薄膜化處理單元11的阻障層的薄膜化裝置。圖1~3是表示薄膜化處理單元內的浸漬槽2的輥配置的放大概略剖視圖。薄膜化處理單元11具有用於向基板3下表面的阻障層賦予薄膜化處理液1的浸漬槽2，設有用於以輥塗敷的方式向基板3上表面的阻障層賦予薄膜化處理液1或者27的塗敷輥8。 The film forming apparatus of the present invention is a thin film forming apparatus including a barrier layer of the thin film processing unit 11 which is obtained by subjecting the barrier layer component to a filming treatment liquid 1 . 1 to 3 are enlarged schematic cross-sectional views showing the arrangement of the rolls of the dipping tank 2 in the thin film processing unit. The thin film processing unit 11 has a immersion tank 2 for providing a thin film treatment liquid 1 to a barrier layer on the lower surface of the substrate 3, and is provided with a thin film treatment for the barrier layer on the upper surface of the substrate 3 by roll coating. Application roller 8 of liquid 1 or 27.
在薄膜化處理單元11中，從投入口7投入的形成了阻障層的基板3被浸漬槽的入口輥對4向裝有薄膜化處理液1的浸漬槽2中運送，並通過浸漬槽2的出口輥對5。其間，基板3上的阻障層成分被薄膜化處理液1膠 束化，該膠束相對於薄膜化處理液1不溶化。 In the thin film processing unit 11, the substrate 3 on which the barrier layer is formed, which is supplied from the inlet port 7, is carried by the inlet roller pair 4 of the immersion tank into the immersion tank 2 containing the thin film treatment liquid 1, and passes through the immersion tank 2 The exit roller pair is 5. In the meantime, the barrier layer component on the substrate 3 is thinned by the thin film processing liquid 1 In the bundle, the micelles are insolubilized with respect to the thin film treatment liquid 1.
在如圖1那樣，在未投入基板3的狀態下，從浸漬槽2的入口輥對4和出口輥對5溢流的薄膜化處理液1的量少，能夠將浸漬槽2內的薄膜化處理液面維持在高的位置。浸漬槽2內的薄膜化處理液面只要是浸漬槽2的塗敷輥8濕潤的程度即可，在基板3向浸漬槽2中運送的期間維持薄膜化處理液面不變者為佳。另外，入口輥對4以及出口輥對5的上側輥作為塗敷輥8發揮功能。 In the state where the substrate 3 is not inserted, the amount of the thin film-forming treatment liquid 1 overflowing from the inlet roller pair 4 and the outlet roller pair 5 of the immersion tank 2 is small, and the immersion tank 2 can be thinned. The treatment level is maintained at a high position. The thin film processing liquid surface in the immersion tank 2 is only required to be wetted by the application roller 8 of the immersion tank 2, and it is preferable to maintain the thickness of the film formation treatment liquid while the substrate 3 is being conveyed into the immersion tank 2. Further, the inlet roller pair 4 and the upper roller of the outlet roller pair 5 function as the coating roller 8.
在圖2中，形成了阻障層的基板3被浸漬槽的入口輥對4向裝有薄膜化處理液1的浸漬槽2中運送，入口輥對4的上側輥被抬起，薄膜化處理液1從形成的間隙24向浸漬槽2外流出。基板3的厚度越大，薄膜化處理液1向浸漬槽2外的流出量越多，若其流出量大於向浸漬槽2的循環供給量，則薄膜化處理液面逐漸下降。如果薄膜化處理液面在基板3的運送線之上，則成為塗敷輥8被薄膜化處理液1濕潤的狀態，能夠使薄膜化處理液1轉印塗敷地賦予到基板3上表面的阻障層。 In Fig. 2, the substrate 3 on which the barrier layer is formed is transported by the inlet roller pair 4 of the immersion tank into the immersion tank 2 containing the film-forming treatment liquid 1, and the upper roller of the inlet roller pair 4 is lifted up, and thinned. The liquid 1 flows out from the formed gap 24 to the outside of the immersion tank 2. The larger the thickness of the substrate 3, the larger the outflow amount of the thin film processing liquid 1 to the outside of the immersion tank 2, and if the outflow amount is larger than the circulation supply amount to the immersion tank 2, the liquid level of the thin film processing liquid gradually decreases. When the thin film processing liquid surface is on the transport line of the substrate 3, the application roller 8 is wetted by the thin film processing liquid 1, and the thin film processing liquid 1 can be applied to the upper surface of the substrate 3 by transfer coating. Barrier layer.
在圖3中，從薄膜化處理液供給管25通過薄膜化處理液用噴嘴26將薄膜化處理液27直接供給到浸漬槽的塗敷輥8。即使在浸漬槽2的薄膜化處理液面逐漸下降，薄膜化處理液面低於基板3的運送線的情況下，由於塗敷輥8處於被直接供給的薄膜化處理液27濕潤的狀態，所以能夠使薄膜化處理液27轉印塗敷地賦予到基板3上表面的阻障層。 In FIG. 3, the thin film processing liquid 27 is directly supplied from the thin film processing liquid supply pipe 25 to the coating roller 8 of the dipping tank by the thin film processing liquid nozzle 26. Even when the liquid level of the thin film processing liquid of the immersion tank 2 is gradually lowered, and the liquid level of the thin film processing liquid is lower than the transport line of the substrate 3, the application roller 8 is in a state in which the thin film processing liquid 27 directly supplied is wet. The barrier layer which is applied to the upper surface of the substrate 3 by transfer coating of the thin film processing liquid 27 can be applied.
對浸漬槽的塗敷輥8進行說明。在基板3向浸漬槽2中運送的期間阻障層表面被薄膜化處理液的液膜覆蓋者為佳。以被積累在浸漬槽內的薄膜化處理液1或者從薄膜化處理液用噴嘴26直接供給的薄膜化處理液27濕潤的塗敷輥8與基板3上表面的阻障層表面相接觸的方式，能夠形成薄膜化處理液的液膜，並使該液膜的厚度均勻地一致。尤其是在阻障層表面屬於疏水性的情況下，該液膜與阻障層表面的親和性降低，薄膜化處理液在阻障層表面流動，有薄膜化處理液的覆蓋量不均勻的情況，但藉由與塗敷輥8相接觸，抑制了薄膜化處理液的流動，能夠保持阻障層表面的覆蓋量均勻。 The application roller 8 of the immersion tank will be described. It is preferable that the surface of the barrier layer is covered with the liquid film of the thin film-forming liquid during the conveyance of the substrate 3 into the immersion tank 2. The coating roller 8 wetted by the thin film processing liquid 1 accumulated in the immersion tank or the thin film processing liquid 27 directly supplied from the thin film processing liquid nozzle 26 is in contact with the surface of the barrier layer on the upper surface of the substrate 3. The liquid film of the thin film processing liquid can be formed, and the thickness of the liquid film can be uniformly uniform. In particular, when the surface of the barrier layer is hydrophobic, the affinity between the liquid film and the surface of the barrier layer is lowered, and the thin film treatment liquid flows on the surface of the barrier layer, and the coverage of the thin film treatment liquid is uneven. However, by the contact with the application roller 8, the flow of the thin film processing liquid is suppressed, and the coverage of the surface of the barrier layer can be kept uniform.
在此，對薄膜化處理液1以及27將阻障層成分膠束化的速度進行說明。在基板3向浸漬槽2中運送的期間，若對浸漬在薄膜化處理液1中的狀態的基板下表面的阻障層和被薄膜化處理液的液膜覆蓋的狀態的基板上表面的阻障層進行比較，則後者的膠束化速度更慢。進而膠束化速度因薄膜化處理液的液膜的厚度的不同而不同，液膜越薄，膠束化速度越慢。也就是說，經由塗敷輥8使薄膜化處理液的液膜的厚度均勻地一致，基板3的面內的阻障層成分的膠束化速度的速度差為最小限度，薄膜化處理量均勻。 Here, the speed at which the barrier layer components are micelleized by the thin film formation treatment liquids 1 and 27 will be described. During the conveyance of the substrate 3 into the immersion tank 2, the barrier layer on the lower surface of the substrate immersed in the film formation treatment liquid 1 and the upper surface of the substrate covered with the liquid film of the thin film treatment liquid are blocked. The barrier layer is compared, and the latter has a slower micellization speed. Further, the micellization speed differs depending on the thickness of the liquid film of the thin film processing liquid, and the thinner the liquid film, the slower the micelleization speed. In other words, the thickness of the liquid film of the thin film-forming treatment liquid is uniformly matched by the application roller 8, and the speed difference of the micelleization speed of the barrier layer component in the surface of the substrate 3 is minimized, and the film processing amount is uniform. .
重要的是塗敷輥8與阻障層表面密接。因此，作為塗敷輥8，使用表面沒有凹凸的筆直類型的輥者為佳。作為塗敷輥8的種類，可以舉出橡膠輥、海綿輥、 金屬輥、樹脂輥等。其中，具有良好的橡膠彈性(密封性、恢復性)、比重較小、輕量、是低硬度到中硬度、因向阻障層的接觸帶來的衝擊較小、對作為高濃度的鹼性水溶液的薄膜化處理液的耐藥性也良好的烯烴系熱塑性彈性體的輥者為佳。作為烯烴系熱塑性彈性體，可以舉出THERMORUN(註冊商標)。 It is important that the application roller 8 is in close contact with the surface of the barrier layer. Therefore, as the application roller 8, it is preferable to use a straight type roller having no unevenness on the surface. Examples of the type of the application roller 8 include a rubber roller and a sponge roller. Metal roll, resin roll, etc. Among them, it has good rubber elasticity (sealing property, recovery property), small specific gravity, light weight, low hardness to medium hardness, small impact due to contact with the barrier layer, and high alkalinity. It is preferable that the film of the aqueous solution is excellent in the resistance of the olefin-based thermoplastic elastomer. The olefin-based thermoplastic elastomer is THERMORUN (registered trademark).
塗敷輥8即使1根也具有其效果，但透過用多根輥連續地進行塗敷能夠得到更大的效果。具體地說，塗敷輥8進行塗敷的次數越多，阻障層上的薄膜化處理液的液膜的厚度的均勻性越高。此外，即使在阻障層表面屬於疏水性、薄膜化處理液容易流動的情況下，通過增多塗敷輥8進行塗敷的次數，也能夠縮短產生流動的時間，使薄膜化處理液的覆蓋量不均勻的問題為最小限度。進而，即使在基板3的厚度大，浸漬槽2中的薄膜化處理液面低於基板3的運送線的情況下，如果連續地配置有被薄膜化處理液濕潤的狀態的塗敷輥8，也能夠一直向基板3上表面的阻障層表面供給薄膜化處理液。塗敷輥8的數量根據薄膜化處理量適當調整，並不僅限於圖1~3所示的根數。 Even if the application roller 8 has an effect, it is possible to obtain a larger effect by continuously applying a plurality of rollers. Specifically, the more the number of times the application roller 8 is applied, the higher the uniformity of the thickness of the liquid film of the thin film-forming treatment liquid on the barrier layer. In addition, even when the surface of the barrier layer is hydrophobic and the thin film processing liquid easily flows, the number of times of application of the coating roller 8 can be shortened, and the amount of the thin film processing liquid can be reduced. The problem of unevenness is minimal. Furthermore, even when the thickness of the substrate 3 is large, and the thin film processing liquid surface in the immersion tank 2 is lower than the transport line of the substrate 3, if the application roller 8 in a state in which the thin film processing liquid is wet is continuously disposed, It is also possible to supply the thin film processing liquid to the surface of the barrier layer on the upper surface of the substrate 3 at all times. The number of the application rollers 8 is appropriately adjusted according to the amount of film formation, and is not limited to the number shown in Figs.
運送輥9(包括浸漬槽的入口輥對4的下側輥、浸漬槽的出口輥對5的下側輥)、薄膜化處理單元11與膠束除去處理單元12之間的邊界部的運送輥對6中的運送輥除了能夠運送基板3之外，與阻障層表面密接者為佳。運送輥9以及運送輥對6方面，使用種類、功能、 物性與塗敷輥8相同的輥者為佳。尤其是浸漬槽的出口輥對5用於浸漬槽2中的薄膜化處理液的液面維持以及刮去覆蓋在阻障層表面上的薄膜化處理液的液膜之除液。此外，邊界部的運送輥對6用於抑制薄膜化處理液帶入膠束除去處理單元12和膠束除去液10向薄膜化處理單元11的逆流。運送輥的設置位置以及根數只要能夠運送基板3即可，並不僅限於圖1~3所示的設置位置以及根數。 The transport roller 9 (the lower roller including the inlet roller pair 4 of the immersion tank, the lower roller of the exit roller pair 5 of the immersion tank), and the transport roller at the boundary between the thin film processing unit 11 and the micelle removal processing unit 12 It is preferable that the transport roller of the 6 is capable of transporting the substrate 3 and is in close contact with the surface of the barrier layer. Types, functions, and use of the transport roller 9 and the transport roller pair 6 It is preferable that the physical properties are the same as those of the application roller 8. In particular, the pair of outlet rolls 5 of the immersion tank are used for maintaining the liquid level of the thin film processing liquid in the immersion tank 2 and scraping off the liquid film of the thin film processing liquid covering the surface of the barrier layer. Further, the transport roller pair 6 at the boundary portion serves to suppress the reverse flow of the thin film processing liquid to the micelle removal processing unit 12 and the micelle removal liquid 10 to the thin film processing unit 11. The installation position and the number of the transport rollers are only required to be able to transport the substrate 3, and are not limited to the installation positions and the number shown in FIGS. 1 to 3.
如圖1~3的阻障層的薄膜化裝置那樣，浸漬槽的塗敷輥8彼此的間隔W相對於塗敷輥的半徑r為2r<W≦2πr者為佳。在間隔W為半徑r的2倍以下(W≦2r)的情況下，平直型的除液輥對彼此接觸，有因輥的材質而顯著發生輥的磨損的情況。另一方面，在間隔W比輥的圓周2πr大(2πr<W)的情況下，在阻障層的表層容易產生薄膜化處理液的液膜的流動，有難以使覆蓋量均勻的情況。此外，若浸漬槽的薄膜化處理液面下降，向塗敷輥8供給的薄膜化處理液量減少，則有薄膜化處理液相對於基板3上表面的阻障層的轉印不良的情況。另外，浸漬槽的塗敷輥8的半徑r全部為相同的值者為佳。 As in the thin film forming apparatus of the barrier layer of FIGS. 1 to 3, the interval W between the application rollers 8 of the immersion tank is preferably 2r < W ≦ 2πr with respect to the radius r of the application roller. When the interval W is twice or less (W≦2r) of the radius r, the straight type liquid removing rolls are in contact with each other, and the roll wear may be remarkably caused by the material of the roll. On the other hand, when the interval W is larger than the circumference 2πr of the roll (2πr<W), the flow of the liquid film of the thin film processing liquid tends to occur in the surface layer of the barrier layer, and it is difficult to make the coverage uniform. In addition, when the liquid level of the thinning treatment liquid of the immersion tank is lowered and the amount of the thin film processing liquid supplied to the application roller 8 is reduced, the transfer of the thin film-forming liquid phase to the barrier layer on the upper surface of the substrate 3 may be defective. Further, it is preferable that all of the radii r of the application rolls 8 of the immersion tank have the same value.
薄膜化處理液1被薄膜化處理液供給用泵(未圖示)從薄膜化處理液貯藏容器13中的薄膜化處理液吸入口14吸入，經過薄膜化處理液供給管15向浸漬槽2供給。供給到浸漬槽2中的薄膜化處理液1溢流或流出，經過薄膜化處理液回收管16由薄膜化處理液貯藏容器13回收。這樣，薄膜化處理液1在浸漬槽2與薄膜化 處理液貯藏容器13之間循環。從薄膜化處理液排放管17將剩餘的薄膜化處理液1排出。 The thin film processing liquid 1 is sucked from the thin film processing liquid suction port 14 in the thin film processing liquid storage container 13 by a thin film processing liquid supply pump (not shown), and is supplied to the immersion tank 2 through the thin film processing liquid supply pipe 15. . The thin film processing liquid 1 supplied to the immersion tank 2 overflows or flows out, and is recovered from the thin film processing liquid storage container 13 through the thin film processing liquid recovery pipe 16. Thus, the thin film processing liquid 1 is immersed in the dipping tank 2 The treatment liquid storage container 13 circulates. The remaining thin film processing liquid 1 is discharged from the thin film processing liquid discharge pipe 17.
作為在作為薄膜化處理液使用的鹼性水溶液中使用的鹼性化合物，例如可以舉出鋰(Li)、鈉(Na)或者鉀(K)等的鹼金屬矽酸鹽、鹼金屬氫氧化物、鹼金屬磷酸鹽、鹼金屬碳酸鹽、銨磷酸鹽、銨碳酸鹽等的無機鹼性化合物；單乙醇胺(monoethanolamin)、二乙醇胺(diethanolamin)、三乙醇胺(triethanolamin)、甲基胺(methylamine)、二甲基胺(dimethylamine)、乙基胺(ethylamine)、二乙基胺(diethylamine)、三乙基胺(triethylamine)、環己胺(cyclohexylamine)、四甲基氫氧化銨(tetramethylammonium hydroxide、TMAH)、四乙基氫氧化銨(tetraethylammonium hydroxide)、三甲基-2-羥乙基氫氧化銨(2-hydroxyethyltrimethylammonium hydroxide、膽鹼，Choline)等的有機鹼性化合物。這些鹼性化合物既可以單獨使用，也可以作為混合物使用。在作為薄膜化處理液的媒體的水中，可以使用自來水、工業用水、純水等，特別是使用純水者為佳。 Examples of the basic compound used in the alkaline aqueous solution used as the thin film treatment liquid include alkali metal silicates and alkali metal hydroxides such as lithium (Li), sodium (Na) or potassium (K). An inorganic basic compound such as an alkali metal phosphate, an alkali metal carbonate, an ammonium phosphate or an ammonium carbonate; monoethanolamin, diethanolamin, triethanolamin, methylamine, Dimethylamine, ethylamine, diethylamine, triethylamine, cyclohexylamine, tetramethylammonium hydroxide, TMAH An organic basic compound such as tetraethylammonium hydroxide or 2-hydroxyethyltrimethylammonium hydroxide (choline). These basic compounds may be used either singly or as a mixture. Tap water, industrial water, pure water, etc. can be used for the water which is a medium of a film-forming process liquid, and it is especially preferable to use a pure water.
薄膜化處理液中的鹼性化合物的含有量，在0.1質量%以上50質量%以下能使用。另外，為了將阻障層表面更均勻地進行薄膜化，也能在薄膜化處理液中添加硫酸鹽、亞硫酸鹽。作為硫酸鹽或亞硫酸鹽，可以舉出鋰、鈉或者鉀等的鹼金屬硫酸鹽或亞硫酸鹽、鎂(Mg)、鈣(Ca)等的鹼土類金屬硫酸鹽或者亞硫酸 鹽。 The content of the basic compound in the film-forming treatment liquid can be used in an amount of 0.1% by mass or more and 50% by mass or less. Further, in order to make the surface of the barrier layer more uniform, it is also possible to add a sulfate or a sulfite to the thin film treatment liquid. Examples of the sulfate or sulfite include an alkali metal sulfate such as lithium, sodium or potassium, an alkaline earth metal sulfate such as sulfite, magnesium (Mg) or calcium (Ca), or sulfurous acid. salt.
作為薄膜化處理液的鹼性化合物，在這些之中，特佳的是使用含有從鹼金屬碳酸鹽、鹼金屬磷酸鹽、鹼金屬氫氧化物、鹼金屬矽酸鹽中選擇的無機鹼性化合物、從TMAH、膽鹼中選擇的有機鹼性化合物者。這些鹼性化合物既可以單獨使用，也可以作為混合物使用。此外，鹼性化合物的含有量是5~25質量%的鹼性水溶液由於能夠使表面更均勻地薄膜化，所以能夠適用。在鹼性化合物的含有量不到5質量%時，薄膜化的處理中有時會容易發生不均。此外，如果超過25質量%，則容易引起鹼性化合物的析出，有時液體的經時穩定性、作業性變差。更較佳的是，鹼性化合物的含有量為7~17質量%，最佳的是，8~13質量%。作為薄膜化處理液使用的鹼性水溶液的pH為10以上者為佳。另外，也能適當地添加介面活性劑、消泡劑、溶劑等。 As the basic compound of the thin film treatment liquid, among these, it is particularly preferable to use an inorganic basic compound selected from alkali metal carbonates, alkali metal phosphates, alkali metal hydroxides, and alkali metal silicates. , organic basic compounds selected from TMAH and choline. These basic compounds may be used either singly or as a mixture. Further, the alkaline aqueous solution having a basic compound content of 5 to 25% by mass can be applied because the surface can be more uniformly thinned. When the content of the basic compound is less than 5% by mass, unevenness may occur easily in the treatment of the film formation. In addition, when it exceeds 25% by mass, precipitation of a basic compound tends to occur, and the stability and workability of the liquid may deteriorate. More preferably, the content of the basic compound is 7 to 17% by mass, and most preferably, 8 to 13% by mass. The pH of the alkaline aqueous solution used as the thin film treatment liquid is preferably 10 or more. Further, a surfactant, an antifoaming agent, a solvent, or the like can be appropriately added.
作為薄膜化處理液使用的鹼性水溶液的溫度是15~35℃者為佳，是20~30℃者為較佳。如果溫度過低，則有鹼性化合物向阻障層的滲透速度變慢的情況，需要長時間才能薄膜化出希望的厚度。另一方面，如果溫度過高，則由於在鹼性化合物向阻障層的滲透的同時進行溶解擴散，有容易在面內發生膜厚不均的情況。 The temperature of the alkaline aqueous solution used as the thin film treatment liquid is preferably 15 to 35 ° C, and preferably 20 to 30 ° C. If the temperature is too low, there is a case where the penetration rate of the basic compound to the barrier layer is slow, and it takes a long time to form a desired thickness. On the other hand, when the temperature is too high, dissolution and diffusion occur while the alkaline compound penetrates into the barrier layer, and the film thickness unevenness may easily occur in the plane.
在膠束除去處理單元12中，在薄膜化處理單元11中將使阻障層對於薄膜化處理液不溶化的基板3，藉由運送輥29運送。對於運送來的基板3，藉由膠束除 去液噴霧22供給膠束除去液10，將光交聯性樹脂成分的膠束一下子溶解除去。 In the micelle removal processing unit 12, the substrate 3 in which the barrier layer is insolubilized to the thin film processing liquid is transported by the transport roller 29 in the thin film processing unit 11. For the transported substrate 3, by the micelle The liquid removing spray 22 supplies the micelle removing liquid 10, and the micelle of the photocrosslinkable resin component is dissolved and removed at once.
膠束除去液10用膠束除去液供給用泵(未圖示)從膠束除去液貯藏容器18中的膠束除去液吸入口19吸入膠束除去液10，經過膠束除去液供給管20從膠束除去液用噴嘴21作為膠束除去液噴霧22進行噴射。膠束除去液噴霧22在從基板3上流下後，由膠束除去液貯藏容器18回收。這樣，膠束除去液10在膠束除去處理單元12內循環。從膠束除去液排放管23將剩餘量的膠束除去液10排出。 The micelle removing liquid 10 is sucked into the micelle removing liquid 10 from the micelle removing liquid suction port 19 in the micelle removing liquid storage container 18 by a micelle removing liquid supply pump (not shown), and passes through the micelle removing liquid supply pipe 20 The micelle removing liquid nozzle 21 is used as the micelle removing liquid spray 22 to eject. The micelle removing liquid spray 22 is recovered from the micelle removing liquid storage container 18 after flowing down from the substrate 3. Thus, the micelle removing liquid 10 circulates in the micelle removal processing unit 12. The remaining amount of the micelle removing liquid 10 is discharged from the micelle removing liquid discharge pipe 23.
作為膠束除去液10，也可以使用水，但使用比薄膜化處理液稀的含有鹼性化合物的pH5~10的水溶液者為佳。藉由膠束除去液10，將由薄膜化處理液不溶化的阻障層的成分的膠束再分散而除去。作為在膠束除去液10中使用的水，可以使用自來水、工業用水、純水等，但特別是使用純水者為佳。在膠束除去液10的pH不到5的情況下，有阻障層的成分凝聚而成為不溶性的淤渣、附著在薄膜化後的阻障層表面上的情況。另一方面，在膠束除去液10的pH超過10的情況下，有阻障層過度地溶解擴散、薄膜化的阻障層的厚度變得不均勻而形成處理不均的情況。此外，膠束除去液10可以使用硫酸、磷酸、鹽酸等調整pH。 As the micelle removal liquid 10, water may be used. However, it is preferred to use an aqueous solution having a pH of 5 to 10 containing a basic compound which is thinner than the thin film treatment liquid. The micelle removing liquid 10 removes the micelles of the components of the barrier layer insolubilized by the thin film processing liquid. As the water used in the micelle removing liquid 10, tap water, industrial water, pure water or the like can be used, but it is preferable to use pure water in particular. When the pH of the micelle removal liquid 10 is less than 5, the components of the barrier layer are aggregated to become insoluble sludge and adhere to the surface of the barrier layer after thinning. On the other hand, when the pH of the micelle removal liquid 10 exceeds 10, the barrier layer is excessively dissolved and diffused, and the thickness of the barrier layer which becomes thinned becomes uneven, and processing unevenness may be formed. Further, the micelle removing liquid 10 can be adjusted in pH using sulfuric acid, phosphoric acid, hydrochloric acid or the like.
膠束除去處理中的膠束除去液噴霧22的條件(溫度、噴霧壓、供給流量)可以匹配於薄膜化處理的阻 障層的溶解速度而適當調整。具體地說，處理溫度較佳為10~50℃，更較佳為15~35℃。另外，噴塗壓較佳為0.01~0.5MPa，更較佳為0.1~0.3MPa。膠束除去液10的供給流量為阻障層每1cm2為0.030~1.0L/min者為佳，0.050~1.0L/min者較佳，0.10~1.0L/min者更佳。若供給流量處於該範圍，則在薄膜化後的阻障層表面上不會殘留膠束成分，容易大致均勻地將膠束溶解除去。當阻障層每1cm2的供給流量不到0.030L/min時，有發生膠束的溶解不良的情況。另一方面，如果供給流量超過1.0L/min，則為了供給而需要的泵等的零件變得巨大，有需要龐大的裝置的情況。進而，在超過1.0L/min的供給量下，有帶來膠束的溶解除去的效果不再變化的情況。為了在阻障層表面上高效率地形成液流，可以使噴霧的噴射方向相對於與阻障層表面垂直的方向傾斜的方向。 The conditions (temperature, spray pressure, and supply flow rate) of the micelle-removing liquid spray 22 in the micelle removal treatment can be appropriately adjusted in accordance with the dissolution rate of the barrier layer of the film formation treatment. Specifically, the treatment temperature is preferably from 10 to 50 ° C, more preferably from 15 to 35 ° C. Further, the spray pressure is preferably from 0.01 to 0.5 MPa, more preferably from 0.1 to 0.3 MPa. The supply flow rate of the micelle removal liquid 10 is preferably 0.030 to 1.0 L/min per 1 cm 2 of the barrier layer, preferably 0.050 to 1.0 L/min, and more preferably 0.10 to 1.0 L/min. When the supply flow rate is in this range, the micelle component does not remain on the surface of the barrier layer after the film formation, and it is easy to dissolve and remove the micelle substantially uniformly. When the supply flow rate per 1 cm 2 of the barrier layer is less than 0.030 L/min, dissolution of the micelle may occur. On the other hand, if the supply flow rate exceeds 1.0 L/min, the number of components such as a pump required for supply becomes large, and a large device is required. Further, at a supply amount exceeding 1.0 L/min, there is a case where the effect of dissolving and removing the micelles does not change. In order to efficiently form the liquid flow on the surface of the barrier layer, the direction in which the spray is sprayed may be inclined with respect to the direction perpendicular to the surface of the barrier layer.
以下，透過實施例進一步詳細地說明本創作，但本創作並不被該實施例限定。 Hereinafter, the present creation will be described in further detail by way of examples, but this creation is not limited by the embodiment.
在玻璃基材環氧樹脂基板(面積510mm×340mm，銅箔厚度12μm，基材厚度2.0mm，三菱瓦斯化學公司(MITSUBISHI GAS CHEMICAL COMPANY,INC.)製，商品名：CCL-E170)上，使用乾膜阻材用層壓裝置而熱 壓接乾膜阻材(日立化成工業公司(Hitachi Chemical Co.,Ltd.)製，商品名：RY3625，厚度25μm)，形成阻障層。 The glass substrate epoxy resin substrate (area 510 mm × 340 mm, copper foil thickness 12 μm, substrate thickness 2.0 mm, manufactured by MITSUBISHI GAS CHEMICAL COMPANY, INC., trade name: CCL-E170) was used. Dry film barrier material is heated by laminating device A dry film barrier material (manufactured by Hitachi Chemical Co., Ltd., trade name: RY3625, thickness: 25 μm) was formed to form a barrier layer.
接著，在將乾膜阻材的載體膜剝離後，藉由具有具備浸漬槽2的薄膜化處理單元11、和用膠束除去液10將膠束除去的膠束除去處理單元12的阻障層之薄膜化裝置，使阻障層薄膜化。 Next, after the carrier film of the dry film barrier material is peeled off, the barrier layer of the treatment unit 12 is removed by the film processing unit 11 having the immersion tank 2 and the micelles removed by the micelle removal liquid 10. The thin film forming device thins the barrier layer.
在薄膜化處理單元的浸漬槽中入口輥對4(半徑r：20mm)與出口輥對5(半徑r：20mm)之間設有7根塗敷輥8(半徑r：20mm)，藉由各輥彼此的間隔W均為45mm的阻障層的薄膜化裝置，將阻障層薄膜化(浸漬槽全長為360mm)。此外，浸漬槽的運送輥9(半徑r：20mm)與塗敷輥8成對地對置設置。作為薄膜化處理液1(鹼性水溶液)使用10品質%的碳酸鈉水溶液(液溫度為25℃)，以浸漬槽2中的接液處理時間為20秒的方式進行了薄膜化處理。之後，從浸漬槽的出口輥對5通過邊界部的運送輥對6，在膠束除去處理單元12中將不溶化的膠束除去，將阻障層薄膜化。 In the dipping tank of the thin film processing unit, seven application rolls 8 (radius r: 20 mm) are provided between the inlet roller pair 4 (radius r: 20 mm) and the outlet roller pair 5 (radius r: 20 mm). A thin film forming apparatus having a barrier layer of 45 mm between the rolls was formed, and the barrier layer was formed into a film (the entire length of the dipping tank was 360 mm). Further, the conveyance roller 9 (radius r: 20 mm) of the immersion tank is opposed to the application roller 8 so as to face each other. A thin film treatment liquid 1 (alkaline aqueous solution) was subjected to a thin film treatment using a 10% by mass aqueous sodium carbonate solution (liquid temperature: 25 ° C) and a liquid contact treatment time in the immersion tank 2 of 20 seconds. Thereafter, the insolubilized micelles are removed from the micelle removal processing unit 12 from the pair of discharge rollers 5 of the immersion tank through the boundary portion, and the barrier layer is formed into a thin film.
在水洗處理及乾燥處理後，將薄膜化後的阻障層的厚度測量10個點，最大值是11.0μm，最小值是9.0μm，平均厚度是10.0μm。此外，利用光學顯微鏡觀察薄膜化後的阻障層的表面，確認是沒有處理不均的平滑的面。 After the water washing treatment and the drying treatment, the thickness of the thinned barrier layer was measured at 10 points, the maximum value was 11.0 μm, the minimum value was 9.0 μm, and the average thickness was 10.0 μm. Further, the surface of the barrier layer after the film formation was observed with an optical microscope, and it was confirmed that there was no smooth surface which was not treated unevenly.
除了浸漬槽的塗敷輥8(半徑r：20mm)為5根，各輥彼此的間隔W均為60mm以外，用與實施例1相同的方法將阻障層薄膜化。 The barrier layer was formed into a film in the same manner as in Example 1 except that the application rolls 8 (radius r: 20 mm) of the immersion tank were five, and the interval W between the rolls was 60 mm.
在水洗處理及乾燥處理後，將薄膜化後的阻障層的厚度測量10個點，最大值是11.0μm，最小值是8.5μm，平均厚度是9.5μm。此外，利用光學顯微鏡觀察薄膜化後的阻障層的表面，確認是沒有處理不均的平滑的面。 After the water washing treatment and the drying treatment, the thickness of the thinned barrier layer was measured at 10 points, the maximum value was 11.0 μm, the minimum value was 8.5 μm, and the average thickness was 9.5 μm. Further, the surface of the barrier layer after the film formation was observed with an optical microscope, and it was confirmed that there was no smooth surface which was not treated unevenly.
除了浸漬槽的塗敷輥8(半徑r：20mm)為4根，各輥彼此的間隔W均為72mm以外，用與實施例1相同的方法將阻障層薄膜化。 The barrier layer was formed into a film in the same manner as in Example 1 except that the application rolls 8 (radius r: 20 mm) of the immersion tank were four, and the interval W between the rolls was 72 mm.
在水洗處理及乾燥處理後，將薄膜化後的阻障層的厚度測量10個點，最大值是11.5μm，最小值是8.0μm，平均厚度是9.5μm。此外，利用光學顯微鏡觀察薄膜化後的阻障層的表面，確認是沒有處理不均的平滑的面。 After the water washing treatment and the drying treatment, the thickness of the thinned barrier layer was measured at 10 points, the maximum value was 11.5 μm, the minimum value was 8.0 μm, and the average thickness was 9.5 μm. Further, the surface of the barrier layer after the film formation was observed with an optical microscope, and it was confirmed that there was no smooth surface which was not treated unevenly.
除了浸漬槽的塗敷輥8(半徑r：20mm)為3根，各輥彼此的間隔W均為90mm以外，用與實施例1相同的方法將阻障層薄膜化。 The barrier layer was formed into a film in the same manner as in Example 1 except that the application rolls 8 (radius r: 20 mm) of the immersion tank were three, and the interval W between the rolls was 90 mm.
在水洗處理及乾燥處理後，將薄膜化後的阻障層的厚度測量10個點，最大值是11.5μm，最小值是7.5μm，平均厚度是9.0μm。此外，利用光學顯微鏡觀察薄膜化後的阻障層的表面，確認是沒有處理不均的平滑的面。 After the water washing treatment and the drying treatment, the thickness of the thinned barrier layer was measured at 10 points, the maximum value was 11.5 μm, the minimum value was 7.5 μm, and the average thickness was 9.0 μm. Further, the surface of the barrier layer after the film formation was observed with an optical microscope, and it was confirmed that there was no smooth surface which was not treated unevenly.
除了浸漬槽的塗敷輥8(半徑r：20mm)為2根，各輥彼此的間隔W均為120mm以外，用與實施例1相同的方法將阻障層薄膜化。 The barrier layer was formed into a film in the same manner as in Example 1 except that the application rolls 8 (radius r: 20 mm) of the immersion tank were two, and the interval W between the rolls was 120 mm.
在水洗處理及乾燥處理後，將薄膜化後的阻障層的厚度測量10個點，最大值是11.5μm，最小值是7.0μm，平均厚度是9.0μm。此外，利用光學顯微鏡觀察薄膜化後的阻障層的表面，確認是沒有處理不均的平滑的面。 After the water washing treatment and the drying treatment, the thickness of the thinned barrier layer was measured at 10 points, the maximum value was 11.5 μm, the minimum value was 7.0 μm, and the average thickness was 9.0 μm. Further, the surface of the barrier layer after the film formation was observed with an optical microscope, and it was confirmed that there was no smooth surface which was not treated unevenly.
除了浸漬槽的塗敷輥8(半徑r：20mm)為1根，各輥彼此的間隔W均為180mm以外，用與實施例1相同的方法將阻障層薄膜化。 The barrier layer was formed into a film in the same manner as in Example 1 except that the application roller 8 (radius r: 20 mm) of the immersion tank was one, and the interval W between the rolls was 180 mm.
在水洗處理及乾燥處理後，將薄膜化後的阻障層的厚度測量10個點，最大值是12.0μm，最小值是6.5μm，平均厚度是8.5μm。此外，利用光學顯微鏡觀察薄膜化後的阻障層的表面，確認是沒有處理不均的平滑的 面。 After the water washing treatment and the drying treatment, the thickness of the thinned barrier layer was measured at 10 points, the maximum value was 12.0 μm, the minimum value was 6.5 μm, and the average thickness was 8.5 μm. Further, the surface of the barrier layer after the thinning was observed by an optical microscope, and it was confirmed that there was no smoothness of unevenness in processing. surface.
若對實施例1~6進行比較，則可知在浸漬槽的塗敷輥8彼此的間隔W相對於塗敷輥的半徑r為2r<W≦2πr的實施例1~5中，阻障層的薄膜化處理量更均勻。 Comparing Examples 1 to 6, it is understood that in Examples 1 to 5 in which the interval W between the application rolls 8 of the immersion tanks is 2r < W ≦ 2πr with respect to the radius r of the application rolls, the barrier layer is The amount of filming treatment is more uniform.
在玻璃基材環氧樹脂基板(面積510mm×340mm，銅箔厚度12μm，基材厚度2.0mm，三菱瓦斯化學公司(MITSUBISHI GAS CHEMICAL COMPANY,INC.)製，商品名：CCL-E170)上，使用乾膜阻材用層壓裝置而熱壓接乾膜阻材(日立化成工業公司(Hitachi Chemical Co.,Ltd.)製，商品名：RY3625，厚度25μm)，形成阻障層。 The glass substrate epoxy resin substrate (area 510 mm × 340 mm, copper foil thickness 12 μm, substrate thickness 2.0 mm, manufactured by MITSUBISHI GAS CHEMICAL COMPANY, INC., trade name: CCL-E170) was used. The dry film barrier material was laminated with a dry film barrier material (manufactured by Hitachi Chemical Co., Ltd., trade name: RY3625, thickness: 25 μm) to form a barrier layer.
接著，在將乾膜阻材的載體膜剝離後，藉由具有具備浸漬槽2的薄膜化處理單元11、和用膠束除去液10將膠束除去的膠束除去處理單元12的阻障層之薄膜化裝置，使阻障層薄膜化。 Next, after the carrier film of the dry film barrier material is peeled off, the barrier layer of the treatment unit 12 is removed by the film processing unit 11 having the immersion tank 2 and the micelles removed by the micelle removal liquid 10. The thin film forming device thins the barrier layer.
在薄膜化處理單元的浸漬槽中，藉由在入口輥對4(半徑r：20mm)與出口輥對5(半徑r：20mm)之間連1根塗敷輥8也沒有的阻障層的薄膜化裝置，將阻障層薄膜化(浸漬槽全長為360mm)。在此，浸漬槽的運送輥9(半徑r：20mm)以輥彼此的間隔為45mm設置。作為薄膜化處理液1(鹼性水溶液)使用10品質%的碳酸鈉水溶液(液溫度為25℃)，以浸漬槽2中的接液處理 時間為20秒的方式進行了薄膜化處理。之後，從浸漬槽的出口輥對5通過邊界部的運送輥對6，在膠束除去處理單元12中將不溶化的膠束除去，將阻障層薄膜化。 In the immersion tank of the thin film processing unit, a barrier layer which is not provided by one coating roller 8 between the pair of inlet rollers 4 (radius r: 20 mm) and the pair of outlet rollers 5 (radius r: 20 mm) In the thin film forming apparatus, the barrier layer was formed into a film (the entire length of the dipping tank was 360 mm). Here, the conveying roller 9 (radius r: 20 mm) of the immersion tank was set at an interval of 45 mm between the rolls. A 10% by mass aqueous sodium carbonate solution (liquid temperature: 25 ° C) was used as the thin film treatment liquid 1 (alkaline aqueous solution) to treat the liquid in the immersion tank 2 The film was processed in a time of 20 seconds. Thereafter, the insolubilized micelles are removed from the micelle removal processing unit 12 from the pair of discharge rollers 5 of the immersion tank through the boundary portion, and the barrier layer is formed into a thin film.
在水洗處理及乾燥處理後，將薄膜化後的阻障層的厚度測量10個點，最大值是13.0μm，最小值是5.5μm，平均厚度是8.0μm。此外，利用光學顯微鏡觀察薄膜化後的阻障層的表面，發生了被認為阻障層表面的薄膜化處理液的覆蓋量不均勻為原因的處理不均。 After the water washing treatment and the drying treatment, the thickness of the thinned barrier layer was measured at 10 points, the maximum value was 13.0 μm, the minimum value was 5.5 μm, and the average thickness was 8.0 μm. Further, when the surface of the barrier layer after the thinning was observed by an optical microscope, unevenness in processing was caused by uneven coverage of the thin film-forming treatment liquid on the surface of the barrier layer.
本創作的阻障層之薄膜化裝置能夠用於印刷配線板及引線框的電路基板的製作、具備倒裝片連接用的連接墊的組裝基板的製作中形成阻材圖案的用途。 The thin film forming apparatus of the barrier layer of the present invention can be used for the production of a circuit board for printing a wiring board and a lead frame, and for forming a barrier material pattern in the production of an assembled substrate including a connection pad for flip chip connection.
1‧‧‧薄膜化處理液(浸漬槽) 1‧‧‧filming solution (dipping tank)
2‧‧‧浸漬槽 2‧‧‧dipping tank
3‧‧‧基板 3‧‧‧Substrate
4‧‧‧浸漬槽的入口輥對 4‧‧‧Inlet roller pair of dipping tank
5‧‧‧浸漬槽的出口輥對 5‧‧‧Extraction roller pair of dipping tank
6‧‧‧邊界部的運送輥對 6‧‧‧Transport roller pair at the boundary
7‧‧‧投入口 7‧‧‧ Input
8‧‧‧浸漬槽的塗敷輥 8‧‧‧Application roller for dipping tank
9‧‧‧浸漬槽的運送輥 9‧‧‧Draining roller
11‧‧‧薄膜化處理單元 11‧‧‧Thin film processing unit
r‧‧‧浸漬槽的塗敷輥的半徑 r‧‧‧The radius of the coating roller of the dip tank
W‧‧‧浸漬槽的塗敷輥彼此的間隔 W‧‧‧The spacing of the applicator rolls of the dip tank
Claims (2)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014190978 | 2014-09-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWM519872U true TWM519872U (en) | 2016-04-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104214911U TWM519872U (en) | 2014-09-19 | 2015-09-15 | Apparatus for thin filming resist layer |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP3201110U (en) |
| KR (1) | KR200492371Y1 (en) |
| CN (1) | CN205067962U (en) |
| TW (1) | TWM519872U (en) |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10180179A (en) * | 1996-11-08 | 1998-07-07 | Matsushita Electric Ind Co Ltd | Manufacture of molecular film and manufacturing device |
| JP5339626B2 (en) | 2008-01-30 | 2013-11-13 | 三菱製紙株式会社 | Method for producing conductive pattern |
| JP5444050B2 (en) | 2010-03-12 | 2014-03-19 | 三菱製紙株式会社 | Method for forming solder resist pattern |
| JP5498886B2 (en) | 2010-07-26 | 2014-05-21 | 三菱製紙株式会社 | Dry film resist thinning method |
| CN103109588B (en) | 2010-09-28 | 2016-09-07 | 三菱制纸株式会社 | The forming method of soldering-resistant pattern |
| CN102751185B (en) * | 2012-07-20 | 2015-08-19 | 常州天合光能有限公司 | Solar battery sheet selective etch device and method |
| JP3186533U (en) * | 2012-09-25 | 2013-10-10 | 三菱製紙株式会社 | Resist layer thinning device |
-
2015
- 2015-09-09 JP JP2015004587U patent/JP3201110U/en active Active
- 2015-09-10 KR KR2020150006056U patent/KR200492371Y1/en active IP Right Grant
- 2015-09-15 TW TW104214911U patent/TWM519872U/en not_active IP Right Cessation
- 2015-09-18 CN CN201520724767.9U patent/CN205067962U/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR200492371Y1 (en) | 2020-09-25 |
| KR20160001020U (en) | 2016-03-29 |
| CN205067962U (en) | 2016-03-02 |
| JP3201110U (en) | 2015-11-19 |
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| MM4K | Annulment or lapse of a utility model due to non-payment of fees |