TWM569125U - Thin filming device for resist layer - Google Patents

Abstract

Provided is a thin film forming apparatus for a resist layer, wherein the thin film forming apparatus for a resist layer can solve a thin film in a thin film forming apparatus for thinning a resist layer of a substrate on which a resist layer is formed. The treatment liquid is reversely flowed to the upstream side of the immersion tank, and the amount of thinning of the resist layer is not uniform. In the thin film forming apparatus including the resist layer of the thin film processing unit, the thin film processing unit has a dipping tank containing a thin film processing liquid, and the film is prevented by applying a load to the upper side roller of the inlet roller pair of the dipping tank. The treatment liquid is countercurrent to the upstream side.

Description

Thin film thinning device

[0001] The present invention relates to a thin film forming apparatus for a resist layer.

[0002] In order to reduce the size, weight, and versatility of electrical and electronic components, a photosensitive resin (photosensitive material) represented by a dry film resist or a solder resist for forming a circuit is used for printing. The high density of the board corresponds to high resolution. Image formation by these photosensitive resins is performed by exposing a photosensitive resin and developing it. [0003] In order to reduce the size and function of the printed circuit board, the photosensitive resin tends to be thinned. Among the photosensitive resins are liquid resists of the type used for coating liquids and dry film resists of the film type. Recently, a dry film resist having a thickness of 15 μm or less has been developed, and the finished product is also being advanced. However, in such a thin dry film resist, there is a problem in that the adhesion and the followability to the unevenness are insufficient as compared with the conventional thickness resist, and peeling, voids, and the like occur. [0004] In order to improve the above aspects, various proposals have been made to realize a high resolution while using a thick photosensitive resin. For example, a method of forming a conductive pattern is disclosed, characterized in that in a method of forming a conductive pattern by a subtractive method, a dry film is attached to a laminated substrate in which a metal layer is provided on one or both sides of an insulating layer. After the resist is formed into a resist layer, a thin film forming step of the resist layer is performed, and then a circuit pattern exposure step, a development step, and an etching step are performed (for example, see Patent Document 1). Further, a method of forming a solder resist pattern is disclosed, in which a resist layer composed of a solder resist is formed on a circuit substrate having a conductive pattern in a method of forming a solder resist pattern, and then a resist layer is formed. In the thin film formation step, the pattern exposure step is performed, and the thin film formation step of the resist layer is performed again (for example, refer to Patent Documents 2 and 3). Further, Patent Document 4 discloses a thin film forming apparatus used for a thin film forming step of a resist layer. Specifically, a thin film forming apparatus for a resist layer is disclosed, and the thin film forming apparatus of the resist layer includes at least four processing units of a thin film processing unit, a micelle removal processing unit, a water washing processing unit, and a drying processing unit, and the thinning is performed. The processing unit dips the substrate on which the resist layer is formed into a high-concentration alkaline aqueous solution (thin film processing liquid), and the micelles of the components of the resist layer are temporarily insolubilized, whereby the micelles are difficult to be dissolved and diffused to the treatment liquid In the above, the micelle removal processing unit dissolves and removes the micelles by means of a micelle removal liquid spray, and the water washing treatment unit washes the surface with water, and the drying treatment unit removes the water washing water. A part of the thin film forming apparatus disclosed in Patent Document 4 will be described using a schematic cross-sectional view shown in FIG. 5. In the thin film processing unit 11, the substrate 3 on which the resist layer is formed is introduced from the input port 7. After the substrate 3 passes through the inlet roller pair 27 of the immersion tank 2, the carrier roller pair 4 is conveyed by the thin film processing liquid 1 immersed in the immersion tank 2. Thereby, the thin film formation process of a resist layer is performed. Thereafter, the substrate 3 is carried to the micelle removal processing unit 12. In the micelle removal processing unit 12, the micelle removal liquid spray 22 is supplied from the micelle removal liquid supply nozzle 21 through the micelle removal liquid supply pipe 20 with respect to the substrate 3 conveyed by the conveyance roller pair 4. The thin film processing liquid 1 in the immersion tank 2 inside the thin film processing unit 11 is a high-concentration alkaline aqueous solution. Therefore, at the thin film processing unit 11, the composition of the resist layer on the substrate 3 is micelleized by the thin film processing liquid 1. This micelle is insoluble with respect to the thin film treatment liquid 1. Thereafter, at the micelle removal processing unit 12, the micelles are removed by the micelle removal liquid spray 22, whereby the resist layer is thinned. Further, in Patent Document 4, a problem is disclosed in which the thin film processing liquid 1 taken out from the dipping tank 2 of the thin film processing unit 11 is carried into a large amount in the micelle removal processing unit 12, whereby The pH of the micelle removal liquid 10 is excessively increased, resulting in unevenness in micelle removal performance, and the amount of thin film formation of the resist layer is not uniform. In order to solve this problem, as shown in FIG. 6, as shown in FIG. 6, a film forming apparatus for a resist layer is also disclosed in which the substrate 3 passes through the exit roller pair 5 of the immersion tank 2 inside the thin film processing unit 11, A portion of the liquid removal roller 8 as a thin film processing liquid take-up suppressing mechanism is provided in a portion between the front and the front of the micelle removal processing unit 12. [0008] The thin film processing liquid take-off mechanism described in Patent Document 4 suppresses the thin film processing liquid 1 on the downstream side of the immersion tank 2. However, when the end of the substrate 3 that has been inserted from the inlet port 7 enters between the pair of inlet rollers 27 of the immersion tank 2, the film-forming treatment liquid 1 flows back from the roller to the upstream side of the immersion tank 2, and adheres to the substrate 3. Enter the portion of the dip tank 2. When there are irregularities on the surface of the resist layer laminated on the substrate 3, a gap is likely to occur between the roll and the resist layer, and this backflow phenomenon tends to occur more remarkably. As a result, the amount of thinning of the resist layer of the thin film-forming treatment liquid 1 to which the countercurrent flow is adhered and the thin film-formed treatment liquid 1 to which the countercurrent is not adhered are changed, so that the amount of thinning of the resist amount of the substrate 3 may change. Not even. [0009] Thus, there is a problem that if the thickness of the thinned resist layer becomes uneven, and there is a thin portion in the thinned resist layer, the conductive pattern is formed in the subtractive method. The reason for the disconnection of the circuit is that the weather resistance is lowered in the pattern formation of the solder resist, and both of them are related to the decrease in the yield in production. [Patent Document 1] [Patent Document 1] International Publication No. 2009/096438 A single document [0011] Patent Document 2: Japanese Laid-Open Patent Publication No. 2011-192692. [0012] Patent Document 3: International Publication No. 2012/043201. [0013] Patent Document 4: Japanese Utility Model Registration No. 3186533.

[0014] An object of the present invention is to provide a thin film forming apparatus for a resist layer, wherein the resist thin film forming apparatus is used for thinning a resist layer for forming a substrate on which a resist layer is formed. In the thin film forming apparatus of the layer, the problem that the amount of thinning of the resist layer is uneven due to the backflow of the thin film forming treatment liquid to the upstream side of the immersion tank can be solved. [0015] A number of inventors of the present invention have found that these problems can be solved by the following solutions. [1] (1) A thin film forming apparatus for a resist layer, wherein the thin film forming apparatus of the resist layer includes a thin film processing unit, wherein the thin film processing unit has a dipping tank, and the dipping tank is provided with a thin film processing liquid. The dipping tank has a filming treatment liquid backflow prevention mechanism. (2) The thin film forming apparatus of the resist layer according to the above (1), wherein the immersion tank has an inlet roller pair, and the thin film processing liquid backflow prevention mechanism applies a load to the upper roller of the inlet roller pair of the immersion tank. Load mechanism. (3) The thin film forming apparatus for a resist layer according to (2) above, wherein the load mechanism is a load roller provided on an upper roll of the pair of inlet rolls of the dipping tank. (4) The thin film forming apparatus for a resist layer according to (2) above, wherein the load mechanism is an inlet roller pair of the immersion tank, and the upper roller is heavier than the lower roller of the pair of inlet rollers. [Embodiment of the Invention] According to the present invention, in the thin film forming apparatus for thinning the resist layer of the substrate on which the resist layer is formed, it is possible to solve the problem of impregnation due to the thin film processing liquid. The problem that the amount of thinning of the resist layer is uneven due to the upstream flow of the groove is reversed.

[Thin film formation step] The film formation step of the resist layer is a step including a thin film formation treatment and a micelle removal treatment, and the thin film formation treatment is performed by supplying a thin film treatment liquid to the resist layer formed on the substrate. The thin film forming treatment liquidizes the components in the resist layer, and temporarily insolubilizes the micelles, and is difficult to dissolve and diffuse into the thin film processing liquid. The micelle removal treatment is sprayed by the micelle removing liquid to remove the resist layer. The micelles on the surface are dissolved and removed in one fell swoop. Furthermore, the water washing treatment may be further included, and the water washing treatment washes the micelles on the surface of the resist layer, the residual thin film treatment liquid, and the micelle removal liquid which are not completely removed in the micelle removal treatment with water, and the drying treatment is performed. The water used in the water washing treatment is removed. <Thin Film Processing> In the film forming treatment, a method such as agitation treatment, spray treatment, wiping, or scraping may be used, but the thin film treatment is preferably performed by an immersion treatment. In the immersion treatment, the substrate on which the resist layer is formed is immersed in the thin film processing liquid. In the treatment method other than the immersion treatment, bubbles may be easily generated in the thin film treatment liquid, and the generated bubbles may adhere to the surface of the resist layer during the thin film formation, and the thickness of the thinned resist layer may become uneven. . In the case of using a spray treatment or the like, it is necessary to make the spray pressure as small as possible so that no air bubbles are generated. [0029] In the present invention, the thickness of the thinned resist layer is determined according to the thickness after the formation of the resist layer and the amount by which the resist layer is thinned. Further, in the present invention, the amount of thinning of the resist layer can be freely adjusted in the range of 0.01 to 500 μm. <Resist> As the resist, an alkali development type resist can be used. Further, the resist may be a liquid resist or a dry film resist, as long as it can be thinned by a high-concentration alkaline aqueous solution (thin-film processing liquid), and can be processed as a specific thin film. Any resist can be used as the resist developed by the developer of the alkaline aqueous solution having a low liquid concentration. The alkaline developing type resist includes a photocrosslinking type resin component. The photocrosslinkable resin component is composed of, for example, an alkali-soluble resin, a photopolymerizable compound, a photopolymerization initiator, and the like. Further, the resist may contain an epoxy resin, a heat hardener, an inorganic filler or the like. Examples of the alkali-soluble resin include a propylene resin, a methacrylic resin, a styrene resin, an epoxy resin, a guanamine resin, a guanamine epoxy resin, an alkyd resin, and a phenol aldehyde. It is an organic polymer such as a resin. The alkali-soluble resin is preferably obtained by polymerizing a monomer (polymerizable monomer) having an ethylenically unsaturated double bond (radical polymerization or the like). The soluble polymers in these alkaline aqueous solutions may be used singly or in combination of two or more. [0032] Examples of the monomer having an ethylenically unsaturated double bond include styrene, vinyl toluene, α-methylstyrene, p-methylstyrene, p-ethylstyrene, and p-methoxystyrene. a styrene derivative such as p-ethoxystyrene, p-chlorostyrene or p-bromostyrene; an acrylamide such as diacetone acrylamide; an ester of vinyl alcohol such as acrylonitrile or vinyl-n-butyl ether; Alkyl (meth)acrylate, tetrahydrofurfuryl (meth)acrylate, dimethylaminoethyl (meth)acrylate, diethylaminoethyl (meth)acrylate, (meth)acrylic acid Glycidyl ester, 2,2,2-trifluoroethyl (meth)acrylate, 2,2,3,3-tetrafluoropropyl (meth)acrylate, (meth)acrylic acid, α-bromo (methyl) a (meth)acrylic acid monoester such as acrylic acid, α-chloro(meth)acrylic acid, β-furyl (meth)acrylic acid or β-styryl (meth)acrylic acid; maleic acid, maleic anhydride, a maleic acid monomer such as monomethyl maleate, monoethyl maleate or monoisopropyl maleate; fumaric acid, cinnamic acid, α-cyanocinnamic acid, itaconic acid, crotonic acid, Propynoic acid and the like. [0033] Examples of the photopolymerizable compound include a compound obtained by reacting a polyhydric alcohol with an α,β-unsaturated carboxylic acid; a bisphenol A-based (meth) acrylate compound; and a glycidyl group-containing compound and a compound obtained by reacting an α,β-unsaturated carboxylic acid; a urethane monomer such as a (meth) acrylate compound having a urethane bond in the molecule; a nonyl phenoxy polyethylene oxy acrylate; Γ-chloro-β-hydroxypropyl-β'-(meth)acryloyloxyethyl phthalate, β-hydroxyalkyl-β'-(methyl) propylene sulfhydryl phthalate A phthalic acid-based compound such as an alkylalkyl ester; an alkyl (meth)acrylate; EO, PO-modified (meth)acrylic acid decyl phenyl ester; Here, EO and PO represent ethylene oxide and propylene oxide, and a compound modified with EO has a block structure of an oxirane group, and a compound modified with PO has a block structure of a propylene oxide group. These photopolymerizable compounds may be used singly or in combination of two or more. [0034] Examples of the photopolymerization initiator include benzophenone, N,N'-tetramethyl-4,4'-diaminobenzophenone (milaxone), and N,N'-tetraethyl group. -4,4'-diaminobenzophenone, 4-methoxy-4'-dimethylaminobenzophenone, 2-benzyl-2-dimethylamino-1-(4-morpholine An aromatic ketone such as phenyl)-butanone-1 and 2-methyl-1-[4-(methylthio)phenyl]-2-morpholino-acetone-1; 2-ethylhydrazine, Phenanthrene, 2-tert-butylhydrazine, octamethylguanidine, 1,2-benzopyrene, 2,3-benzopyrene, 2-phenylindole, 2,3-diphenylfluorene Bismuth, 1-chloroindole, 2-methylindole, 1,4-naphthoquinone, 9,10-phenanthrenequinone, 2-methyl-1,4-naphthoquinone, 2,3-dimethylhydrazine Isomers; benzoin methyl ether, benzoin ethyl ether, benzoin phenyl ether and other benzoin ether compounds; benzoin, methyl benzoin, ethyl benzoin and other benzoin compounds; benzene a benzoin derivative such as octagonal dimethyl ketal; 2-(o-chlorophenyl)-4,5-diphenylimidazole dimer, 2-(o-chlorophenyl)-4,5-di ( Methoxyphenyl)imidazole dimer, 2-(o-fluorophenyl)-4,5-diphenylimidazole dimer, 2-(o-methoxyphenyl)-4,5-diphenyl Imidazole dimer, 2-(pair 2,4,5-triarylimidazole dimer such as oxyphenyl)-4,5-diphenylimidazole dimer; 9-phenyl acridine, 1,7-bis(9,9'-fluorene An acridine derivative such as pyridyl)heptane; N-phenylglycine, N-phenylglycine derivative, coumarin compound, and the like. The aryl substituents of the two 2,4,5-triarylimidazoles in the above 2,4,5-triarylimidazole dimer may be the same to give a symmetric compound, or may be different to give an asymmetric compound. . Further, as in the combination of diethylthioxanthone and dimethylaminobenzoic acid, a thioxanthone compound and a tertiary amine compound may be combined. These may be used alone or in combination of two or more. [0035] The epoxy resin is used as a curing agent. By reacting a carboxylic acid of an alkali-soluble resin with an epoxy, the resist is crosslinked to improve the properties of heat resistance and chemical resistance. However, since the reaction between the carboxylic acid and the epoxy is also carried out at normal temperature, the storage stability of the resist is deteriorated. Therefore, the alkaline development type solder resist generally has a two-liquid form which is mixed before use. There is also a case where the resist contains an inorganic filler, and examples of the inorganic filler include talc, barium sulfate, cerium oxide, and the like. [0036] The method of forming the resist layer on the surface of the substrate may be any method, and examples thereof include a screen printing method, a roll coating method, a spray method, a dipping method, a curtain method, a bar coating method, and an air knife method. Hot melt method, gravure coating method, brush coating method, offset printing method. In the case of a dry film resist, a lamination method is suitable. [Substrate] Examples of the substrate include a substrate for a printed circuit board, a substrate for a lead frame, and a circuit board obtained by processing a substrate for a printed circuit board and a substrate for a lead frame. [0038] Examples of the substrate for a printed circuit board include a flexible substrate and a rigid substrate. The insulating layer of the flexible substrate has a thickness of 5 to 125 μm, and a metal layer of 1 to 35 μm is provided on both sides or a single surface thereof to constitute a laminated substrate, and the flexibility is large. As the material of the insulating layer, polyimide, polyamine, polyphenylene sulfide, polyethylene terephthalate, liquid crystal polymer or the like is usually used. The material having a metal layer on the insulating layer may be a casting method in which a resin liquid is applied on a metal foil by an adhesive method bonded by an adhesive, or a thickness of nm formed on a resin film by sputtering or vapor deposition. The thin conductive layer (seed layer) is produced by any method such as a sputtering/plating method of forming a metal layer by electrolytic plating or a lamination method by hot pressing. As the metal of the metal layer, any metal such as copper, aluminum, silver, nickel, chromium, or an alloy thereof can be used, but copper is generally used. [0040] As the rigid substrate, a laminated substrate provided with a metal layer can be cited. In the laminated substrate, an insulating substrate impregnated with an epoxy resin or a phenol resin is laminated on a paper substrate or a glass substrate as an insulating layer, and the metal foil is placed on one surface or both surfaces thereof, and heated and It is obtained by laminating by pressurization. In addition, a multilayer mask which is produced by laminating a prepreg, a metal foil, or the like after processing the inner layer wiring pattern, and a multilayer board having through holes or non-through holes may be used. The thickness is from 60 μm to 3.2 mm, and the material and thickness are selected according to the final use form of the printed circuit board. Examples of the material of the metal layer include copper, aluminum, silver, gold, and the like, but the most common one is copper. Examples of these printed circuit board substrates are described in "Printed Circuit Technology Handbook - Second Edition -" (edited by the Society of Printed Circuits, 1987, and Nikkan Kogyo Shimbun), and "Multilayer Printed Circuit Guide" (JAS Jiali, 1992, and the publication of the modern chemical company). Examples of the substrate for the lead frame include substrates such as an iron-nickel alloy and a copper-based alloy. [0041] Examples of the substrate for a lead frame include substrates such as an iron-nickel alloy and a copper-based alloy. [0042] The circuit board refers to a board on which a connection bonding board for connecting electronic components such as semiconductor wafers is formed on an insulating substrate. The connecting plate is made of a metal such as copper. Further, a conductor wiring may be formed on the circuit board. Examples of the method of producing the circuit board include a subtractive method, a semi-additive method, and an additive method. In the subtractive method, for example, an etching resist pattern is formed on the substrate for a printed circuit board as described above, and an exposure step, a developing step, an etching step, and a resist stripping step are performed to form a circuit board. <Thin Film Forming Apparatus> FIGS. 1, 3, and 4 are schematic views showing an example of a thin film forming apparatus of the present invention. The thin film forming apparatus of the present invention includes a thin film processing unit 11 that supplies the thin film processing liquid 1 to the resist layer formed on the substrate 3, and micelleizes the components in the resist layer. The thin film processing unit 11 has a dipping tank 2 equipped with a thin film processing liquid. [0044] In the thin film formation processing unit 11, the substrate 3 on which the resist layer is formed is introduced from the input port 7 to the thin film processing unit 11. After the substrate 3 passes through the inlet roller pair 27 of the immersion tank 2, it is conveyed by the conveyance roller pair 4 in a state of being immersed in the immersion tank 2 in the immersion tank 2, and the outlet roller pair 5 passing through the immersion tank 2 . By these processes, the components in the resist layer on the substrate 3 are micenized by the thin film-forming treatment liquid 1, and the micelles are insolubilized with respect to the thin film formation treatment liquid 1. [0045] The thin film processing liquid 1 is sucked from the thin film processing liquid suction port 14 in the thin film processing liquid storage tank 13 by a thin film processing liquid supply pump (not shown), and is supplied through the thin film processing liquid supply pipe 15 It is supplied to the dipping tank 2. When the thin film processing liquid 1 supplied to the immersion tank 2 overflows from the immersion tank 2, it is collected in the thin film processing liquid storage tank 13 through the thin film processing liquid recovery pipe 16. Thus, the thin film processing liquid 1 is circulated between the immersion tank 2 and the thin film processing storage tank 13. The remaining portion of the thin film processing liquid 1 is discharged from the thin film processing liquid drain pipe 17. The basic compound used in the aqueous alkali solution used as the thin film formation treatment liquid 1 may, for example, be an alkali metal ruthenate, an alkali metal hydroxide or an alkali metal phosphate of an alkali metal such as lithium, sodium or potassium. , inorganic basic compounds such as alkali metal carbonates, ammonium phosphates, ammonium carbonates; monoethanolamine, diethanolamine, triethanolamine, methylamine, dimethylamine, ethylamine, diethylamine, triethylamine An organic basic compound such as cyclohexylamine, tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide or trimethyl-2-hydroxyethylammonium hydroxide (choline). These basic compounds may be used singly or as a mixture. Tap water, industrial water, pure water or the like can be used as the water of the medium for the thin film treatment liquid 1, but it is particularly preferable to use pure water. [0047] The basic compound can be used in an amount of 0.1% by mass or more and 50% by mass or less. Further, in order to make the surface of the resist layer more uniform, it is also possible to add a sulfate or a sulfite to the thin film formation treatment liquid 1. Examples of the sulfate or sulfite include sulfates or sulfites of alkali metals such as lithium, sodium or potassium, and sulfates or sulfites of alkaline earth metals such as magnesium and calcium. [0048] As the basic compound of the thin film treatment liquid 1, among them, it is particularly preferable to use an inorganic alkaline selected from an alkali metal carbonate, an alkali metal phosphate, an alkali metal hydroxide, or an alkali metal silicate. a compound; an organic basic compound selected from tetramethylammonium hydroxide or choline. These basic compounds may be used singly or as a mixture. Further, in order to make the surface more uniform in thickness, an alkaline aqueous solution having a basic compound content of 5 to 25% by mass can be suitably used. When the content of the basic compound is less than 5% by mass, the thickness of the thinned resist layer may be uneven. In addition, when the content of the basic compound exceeds 25% by mass, precipitation of the basic compound tends to occur, and the stability and workability of the liquid may be deteriorated. The content of the basic compound is more preferably 7 to 17% by mass, still more preferably 8 to 13% by mass. The pH of the alkaline aqueous solution used as the thin film formation treatment liquid 1 is preferably 10 or more. Further, a surfactant, an antifoaming agent, a solvent, or the like can be appropriately added to the filming treatment liquid 1. The temperature of the alkaline aqueous solution used as the thin film formation treatment liquid 1 is preferably 15 to 35 ° C, and more preferably 20 to 30 ° C. When the temperature is too low, the rate of penetration of the basic compound into the resist layer may be slow, and it takes a long time to thin the desired thickness. On the other hand, when the temperature is too high, the alkaline compound is dissolved and diffused while being impregnated into the resist layer, whereby the thickness of the thinned resist layer may become uneven. [0050] In the micelle removal processing unit 12 provided after the thin film processing unit 11, the substrate 3 in which the resist layer is insolubilized with respect to the thin film processing liquid 1 at the thin film processing unit 11 is transported by the transport roller pair 4. The micelle removing liquid 10 is supplied to the substrate 3 to be transported by the micelle removing liquid spray 22, and the micelles are dissolved and removed at one time. The micelle removing liquid 10 is sucked from the micelle removing liquid suction port 19 in the micelle removing liquid storage tank 18 by the micelle removing liquid supply pump (not shown) through the micelle removing liquid supply pipe 20 The micelle removing liquid nozzle 21 is sprayed as the micelle removing liquid spray 22. The micelle removing liquid spray 22 is discharged from the substrate 3, and is recovered to the micelle removing liquid storage tank 18. Thus, the micelle removal liquid 10 is looped inside the micelle removal processing unit 12. The remaining portion of the micelle removing liquid 10 is discharged from the micelle removing liquid drain pipe 23. [0052] As the micelle removal liquid 10, water may be used, but it is preferred to use an aqueous solution having a pH of 5 to 10 containing a basic compound which is thinner than the thin film treatment liquid 1. With the micelle removing liquid 10, the micelles of the components of the resist layer which are insolubilized in the thin film forming treatment liquid are redispersed and removed. As the water used for the micelle removal liquid 10, tap water, industrial water, pure water or the like can be used, but it is particularly preferable to use pure water. When the pH of the micelle removing liquid 10 is less than 5, the components of the resist layer are aggregated to become insoluble sludge and adhere to the surface of the thinned resist layer. On the other hand, when the pH of the micelle removal liquid 10 exceeds 10, the thickness of the resist layer which is excessively dissolved and diffused and thinned in the surface may be uneven. Further, the pH of the micelle removal liquid 10 can be adjusted using sulfuric acid, phosphoric acid, hydrochloric acid or the like. [0053] The conditions (temperature, spray pressure, and supply flow rate) of the micelle removal liquid spray 22 for the micelle removal treatment are appropriately adjusted in accordance with the dissolution rate of the film-treated resist layer. Specifically, the treatment temperature is preferably from 10 to 50 ° C, more preferably from 15 to 35 ° C. Further, the spray pressure is preferably from 0.01 to 0.5 MPa, more preferably from 0.1 to 0.3 MPa. The supply flow rate of the micelle removal liquid 10 is preferably 0.030 to 1.0 L/min per 1 cm ² of the resist layer, more preferably 0.050 to 1.0 L/min, still more preferably 0.10 to 1.0 L/min. When the supply flow rate is in this range, the insoluble component does not remain on the surface of the thinned resist layer, and the micelles of the components of the insolubilized resist layer are easily removed substantially uniformly in the surface. When the supply flow rate per 1 cm ² of the resist layer is less than 0.030 L/min, there is a case where the component of the insolubilized resist layer is poorly dissolved. On the other hand, when the supply flow rate exceeds 1.0 L/min, parts such as pumps necessary for supply become large, and it is necessary to provide a large-scale apparatus. Further, at a supply amount exceeding 1.0 L/min, the effect of the dissolution and diffusion of the components of the resist layer may not be changed. In order to efficiently generate a liquid flow on the surface of the resist layer, it is preferable to eject from a direction in which the direction of the spray is inclined with respect to a direction perpendicular to the surface of the resist layer. <Thin-film treatment liquid backflow prevention mechanism> In the film formation processing unit 11, when the end of the substrate 3 introduced from the inlet port 7 enters between the inlet roller pairs 27 of the immersion tank 2, the thin film processing liquid 1 The film-forming treatment liquid 1 which flows in the backflow is backflowed from the roll to the upstream side of the immersion tank 2, and it exists in the case which the part of the board|substrate 3 which does not enter the immersion tank 2. In this case, the amount of thinning of the resist layer of the thin film-forming treatment liquid 1 to which the countercurrent flow is adhered and the thin film formation treatment liquid 1 to which the countercurrent is not adhered are changed, so that the amount of thinning of the resist amount of the substrate 3 is changed. Not even. The immersion tank 2 has a film formation treatment liquid backflow prevention mechanism, whereby the backflow of the film formation treatment liquid 1 to the upstream side can be prevented. 1, 3 and 4 are schematic views showing an example of a thin film forming apparatus of a resist layer of the present invention. In the thin film formation apparatus of the resist layer of FIGS. 1, 3 and 4, the immersion tank 2 has an inlet roller pair 27, and the film formation treatment liquid backflow prevention mechanism applies a load to the upper roller 30 of the inlet roller pair 27 of the immersion tank 2. Load mechanism. In the thin film forming apparatus of the resist layer of FIG. 1, the load mechanism is the load roller 29 provided in the upper roll 30 of the inlet roller pair 27 of the immersion tank 2. Fig. 2 is an enlarged schematic view showing a backflow prevention mechanism of the thin film processing liquid of Fig. 1; The load roller 29 is provided as a load mechanism, thereby applying a load to the substrate 3 sandwiched between the pair of inlet rollers 27 of the immersion tank 2, and the substrate 3 and the inlet roller pair 27 of the immersion tank 2 are in close contact with each other, thereby preventing the thin film processing liquid from being prevented. Reverse flow to the upstream side. As the load mechanism, a mechanism for applying a load to the roller shaft 28 exposed to the end portion of the upper roller 30 of the inlet roller pair 27 of the immersion tank 2 in the width direction is also useful, but the inlet roller pair 27 of the substrate 3 and the immersion tank 2 is also used. The load roller 29 is preferred in that the adhesion is excellent. In the thin film forming apparatus of the resist layer of FIGS. 3 and 4, the load mechanism is an inlet roller pair 27 having the immersion tank 2 of the upper roll 30 which is heavier than the lower side roll 32. In FIG. 3, as the elastic body of the surface of the upper side roll 30, an elastic body having a higher density than the elastic body of the lower side roll 32 is used. In FIG. 4, the weight of the roller shaft 31 of the upper roller is heavier than the roller shaft 28 of the lower roller. The transport roller pair 4 used in the thin film forming apparatus of the present invention is preferably capable of not only transporting the substrate 3 but also adhering to the surface of the resist layer. The conveying roller is suitable for a straight roller having no unevenness on the surface. Examples of the type of the conveyance roller include rubber rolls such as styrene-butadiene rubber (SBR), acrylonitrile-butadiene rubber (NBR), anthrone, ethylene/propylene, diene rubber (EPDM), and fluorine; A sponge roll such as polyvinyl alcohol (PVA) or expanded polyvinyl chloride (PVC); a metal roll; a resin roll such as a polyolefin resin or a fluororesin. Among them, since it has excellent rubber elasticity (sealing property, recovery property), the specific gravity is small and lightweight, it is from low hardness to medium hardness, and the impact on the contact of the resist layer is small, and the thinning treatment of the high-concentration alkali aqueous solution is performed. Since the liquid 1 is also excellent in chemical resistance, it is preferably a roll of an olefin-based thermoplastic elastomer or a polyvinyl chloride-based thermoplastic elastomer. The olefin-based thermoplastic elastomer is exemplified by THERMORUN (registered trademark), and the polyvinyl chloride-based thermoplastic elastomer is exemplified by Tripron (registered trademark). In addition, the installation position and the number of the conveyance rollers are not particularly limited to the installation positions and the numbers shown in FIGS. 1 , 2 , and 4 as long as the substrate 3 can be transported. [0058] For the load roller 29, it is also possible to use a roller having the same type, function, and physical properties as the transport roller pair. Further, in order to apply an appropriate load, the weight of the entire load roller 29 and the roller shaft of the load roller 29 can be appropriately changed. The lower roller 32 of the inlet roller pair 27 of the immersion tank 2 can also use the same roller, the function, and the physical property with respect to the conveyance roller pair 4. As the upper roller 30 of the inlet roller pair 27 of the immersion tank 2, it is possible to use a roller having the same function and physical properties as the carrier roller pair 4 except for the weight of the lower roller 32. The outlet roller pair 5 as the immersion tank, the exit roller pair 6 of the thin film processing unit, and the inlet roller pair 9 of the micelle removal processing unit are also suitably used in the same manner as the conveyance roller pair 4 in terms of type, function, and physical properties. Roller. In particular, the pair of outlet rolls 5 of the immersion tank are used to maintain the liquid level of the thin film processing liquid 1 of the immersion tank 2 and to remove the liquid film of the thin film processing liquid 1 covering the surface of the resist layer. . Further, the pair of exit rollers 6 of the thin film processing unit is used to suppress the backflow of the thin film processing liquid 1 into the micelle removal processing unit 12 and the micelle removal liquid 10 to the thin film processing unit 11. The inlet roller pair 9 of the micelle removal processing unit is mainly used to block the micelle removal liquid 10 which is reversed in the thin film processing unit 11. [0060] Further, although not shown in FIGS. 1, 2 and 4, between the pair of outlet rollers 5 of the immersion tank inside the thin film processing unit 11 and the pair of exit rollers 6 of the thin film processing unit, A liquid removal roller pair 8 as illustrated in Fig. 6 is provided. By means of the pair of liquid removal rolls 8, the liquid film of the filming treatment liquid 1 is scraped off, and the thickness of the liquid film is uniformly uniform. The substrate 3 in which the liquid film of the thin film processing liquid 1 is uniformly aligned passes through the exit roller pair 6 of the thin film processing unit, and is then transported to the micelle removal processing unit 12. This effect can also be exhibited by one pair of the liquid removing roller pairs 8, but a large effect can be obtained by continuously removing the liquid by a plurality of roller pairs. It is important that the pair of liquid removing rollers 8 are in close contact with the surface of the resist. Therefore, as the liquid removal roll, a straight type roller having no unevenness on the surface is preferably used. As the type of the liquid removal roller, the same type as the above-described conveyance roller is suitably used. [Examples] [0061] The present invention will be described in further detail based on the following examples, but the present invention is not limited to the examples. (Example 1) Glass substrate epoxy resin substrate (area: 510 mm × 340 mm, copper foil thickness: 12 μm, substrate thickness: 0.2 mm, manufactured by MITSUBISHI GAS CHEMICAL COMPANY, INC., trade name: CCL-E170) A dry film resist (manufactured by Hitachi Chemical Co., Ltd., trade name: RY3625, thickness: 25 μm) was thermocompression-bonded using a dry film resist to form a resist. Floor. Next, after the carrier film of the dry film resist is peeled off, the resist layer is thinned by using a thin film forming apparatus ( FIG. 1 ) of the resist layer. In the thin film forming apparatus of the resist layer, the thin film processing unit 11 has a dipping tank 2 containing a thin film processing liquid, and the dipping tank 2 has a film forming treatment liquid backflow prevention mechanism, and the dipping tank 2 has an inlet roller pair 27, a film. The chemical treatment backflow prevention mechanism is a load mechanism that applies a load to the upper roller of the inlet roller pair 27 of the immersion tank, and the load mechanism is the load roller 29. In the thin film forming apparatus of the resist layer, in the thin film processing unit 11, when the end of the substrate 3 fed from the input port 7 enters between the pair of inlet rollers 27 of the dipping tank 2, the load roller is used. 29. A load is applied to the substrate 3 sandwiched between the pair of inlet rolls 27 of the dipping tank 2. Then, the substrate 3 and the inlet roller pair 27 of the immersion tank 2 are in close contact with each other, and it is possible to prevent the thin film processing liquid 1 from flowing back to the upstream side. The film formation treatment liquid 1 (basic aqueous solution) was subjected to a film formation treatment using a 10% by mass aqueous sodium carbonate solution (liquid temperature: 25° C.) and the immersion treatment time of the immersion tank 2 was 30 seconds. Thereafter, in the micelle removal processing unit 12, the insolubilized micelles are removed to thin the resist layer. After the micelle removal treatment, a water washing treatment and a drying treatment are performed. Thereafter, the thickness of the thinned portion of the resist layer was measured at 10 points, and the maximum value was 13.3 μm, the minimum value was 10.9 μm, and the average thickness was 12.1 μm. Further, the surface of the film-formed resist layer was observed with an optical microscope, and it was confirmed that it was a smooth surface. (Example 2) The film forming treatment liquid backflow prevention mechanism is an inlet roller pair 27 having a dipping tank 2 of the upper side roll 30 which is heavier than the lower side roll 32, and an elastic body as a surface of the upper side roll 30, except that it will be used. The resist layer was thinned in the same manner as in Example 1 except that the thin film forming apparatus (Fig. 3) of the resist layer of the elastomer having a higher density of the elastomer of the downstream roller 32 was used. By the thin film forming apparatus of the resist layer, it is possible to prevent the upstream side thin film processing liquid 1 of the inlet roller pair 27 of the immersion tank 2 from flowing back upstream. The thickness of the thinned portion of the ten resist layers was measured, and the maximum value was 13.2 μm, the minimum value was 11.0 μm, and the average thickness was 12.2 μm. Further, the surface of the film-formed resist layer was observed with an optical microscope to confirm a smooth surface. (Example 3) The film formation treatment liquid backflow prevention mechanism is an inlet roller pair 27 having the immersion tank 2 of the upper side roller 30 which is heavier than the lower side roller 32, except that the roller shaft 31 of the upper side roller is used as the roller of the downstream roller. The resist layer was thinned in the same manner as in Example 1 except that the thin film forming apparatus (Fig. 4) of the resist having a weight of 28 was used. By the thin film forming apparatus of the resist layer, it is possible to prevent the upstream side thin film processing liquid 1 of the inlet roller pair 27 of the immersion tank 2 from flowing back upstream. The thickness of the thinned portion of the ten resist layers was measured, and the maximum value was 13.1 μm, the minimum value was 11.1 μm, and the average thickness was 12.2 μm. Further, the surface of the film-formed resist layer was observed with an optical microscope to confirm a smooth surface. (Comparative Example 1) A resist layer was formed into a thin film in the same manner as in Example 1 except that a thin film forming apparatus (Fig. 5) having no resist layer for preventing the backflow prevention mechanism of the thin film processing liquid was used. In the thin film forming apparatus of the resist layer, the thin film processing liquid 1 is flowed upstream to the upstream side of the inlet roller pair 27 of the immersion tank 2. The thickness of the thinned portion of the ten resist layers was measured, and the maximum value was 13.5 μm, the minimum value was 10.6 μm, and the average thickness was 11.8 μm. Further, the surface of the film-formed resist layer was observed with an optical microscope to have a non-uniform thickness. [Industrial Applicability] The thin film forming apparatus of the resist layer of the present invention is used in the production of a printed circuit board, a circuit board of a lead frame, or a package substrate including a bonding pad for flip chip bonding. It can be applied to the use of forming a resist pattern.

[0070]

1‧‧‧filming solution

2‧‧‧dipping tank

3‧‧‧Substrate

4‧‧‧Transport roller pair

5‧‧‧Extraction roller pair of dipping tank

6‧‧‧Extraction roller pair of thin film processing unit

7‧‧‧ Input

8‧‧‧Removing roller pair

9‧‧‧Inlet roller pair of micelle removal processing unit

10‧‧‧ micelle removal solution

11‧‧‧Thin film processing unit

12‧‧‧ micelle removal processing unit

13‧‧‧Thin film processing liquid storage tank

14‧‧‧Thin film treatment liquid inlet

15‧‧‧Thin film processing liquid supply pipe

16‧‧‧Thin film treatment liquid recovery pipe

17‧‧‧Thin film treatment liquid drain

18‧‧‧ micelle removal liquid storage tank

19‧‧‧ micelle removal fluid inlet

20‧‧‧ micelle removal liquid supply tube

21‧‧‧Machine beam removal nozzle

22‧‧‧ micelle removal spray

23‧‧‧ micelle removal liquid drain

24‧‧‧Removing roller pair with thin film processing liquid supply pipe

25‧‧‧Removal roller pair nozzle

26‧‧‧Draining roller pair with roller immersion tank

27‧‧‧Inlet roller pair of dipping tank

28‧‧‧ Roller (light)

29‧‧‧Load roller

30‧‧‧The upper roller of the inlet roller pair of the dip tank

31‧‧‧Rolling shaft (heavy)

32‧‧‧The lower roller of the inlet roller pair of the dip tank

1 is a schematic cross-sectional view showing an example of a thin film forming apparatus of a resist layer of the present invention. 2 is an enlarged schematic view showing an example of a load mechanism of a thin film forming apparatus for a resist layer according to the present invention. 3 is a schematic cross-sectional view showing an example of a thin film forming apparatus of a resist layer of the present invention. 4 is a schematic cross-sectional view showing an example of a thin film forming apparatus of a resist layer of the present invention. [ Fig. 5] Fig. 5 is a schematic cross-sectional view showing an example of a thin film forming apparatus of a resist layer. 6 is a schematic cross-sectional view showing an example of a thin film forming apparatus of a resist layer.

Claims (4)

A thin film forming apparatus for a resist layer, wherein the thin film forming apparatus of the resist layer includes a thin film processing unit, wherein the thin film processing unit has a dipping tank, and the dipping tank is provided with a thin film processing liquid, and the dipping tank has The filming treatment liquid backflow prevention mechanism. The thin film forming apparatus for a resist layer according to claim 1, wherein the immersion tank has an inlet roller pair, and the thin film processing liquid backflow prevention mechanism is an upper roller of an inlet roller pair of the immersion tank. The load mechanism that applies the load. The thin film forming apparatus for a resist layer according to claim 2, wherein the load mechanism is a load roller provided on the upper roller of the inlet roller pair of the immersion tank. The thin film forming apparatus for a resist layer according to claim 2, wherein the load mechanism is the pair of inlet rollers of the immersion tank, and the upper roller is heavier than a lower roller of the inlet roller pair.