TWI390746B - 太陽能電池元件 - Google Patents

太陽能電池元件 Download PDF

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Publication number
TWI390746B
TWI390746B TW098115079A TW98115079A TWI390746B TW I390746 B TWI390746 B TW I390746B TW 098115079 A TW098115079 A TW 098115079A TW 98115079 A TW98115079 A TW 98115079A TW I390746 B TWI390746 B TW I390746B
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Taiwan
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groove
solar cell
substrate
hole
cell component
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TW098115079A
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TW201041156A (en
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Chih Hung Wu
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Atomic Energy Council
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Priority to US12/637,424 priority patent/US20100282311A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Description

太陽能電池元件
本發明係有關於一種太陽能電池元件，尤指一種具高結構強度與高效率之太陽能電池元件，特別係指光吸收作用區鄰近熱擴散裝置而能降低整體元件之電阻與熱阻抗，可易於製造並具高產量者。
一般傳統上太陽能電池元件，如第6圖所示，係採用薄層基板4作為元件結構，包括有複數個於該基板4上方之電性接墊5。其中該基板4下方為一平坦面，可藉由一接合膠6黏著一熱擴散裝置7。
然而，上述薄層結構需要複雜之處理過程，例如，在晶圓打線鍵結過程中，礙於上述使用薄層之基板4，其本身結構性弱，因此另需鍵結一基材增強結構性後再於最後移除之，如此將造成製程花費時間長，且其產量亦低，實難以供業界做大量生產之用。此外，由於此種結構熱擴散能力不足，致使整體元件溫度難以發散，特別係當操作在高聚光照射下，熱量內積迫使溫度升高之情形將更加嚴重，進而導致元件性能降低，甚而縮短使用壽命。故，一般習用者係無法符合使用者於實際使用時之所需。
本發明之主要目的係在於，克服習知技藝所遭遇之上述問題並提供一種可使光吸收作用區鄰近熱擴散裝置而能降低整體元件之電阻與熱阻抗，並具有高結構強度、高效率且易於製造，並可大量生產而有高產量輸出之結構者
為達以上之目的，本發明係一種太陽能電池元件，係包括一基板、複數個配置於該基板上表面之至少一部份上之電性接墊、及一配置於該基板下表面之歐姆接觸結構所組成。其中該基板係具有一上表面及一相對該上表面之下表面，且於該基板下表面處係具有一方形或圓形柱狀之凹槽孔洞，及連接於該凹槽孔洞開口之複數條凹槽通道，並於該凹槽孔洞內周面設有一中央凹槽及一設於其外周面之凹槽側壁。
請參閱『第1圖及第2圖』所示，係分別為本發明之前側結構剖面示意圖、及本發明之右側結構剖面示意圖。如圖所示：本發明係一種太陽能電池元件，其特徵在於可使光吸收作用區鄰近熱擴散裝置並具有高結構強度者，係包括有一基板1、複數個電性接墊2及一歐姆接觸結構3所組成。
上述基板1係具有一上表面11及一相對該上表面11之下表面12，且於該基板1下表面12處係具有一柱狀之凹槽孔洞13，及連接於該凹槽孔洞13開口之四條凹槽通道14、15、16及17，並於該凹槽孔洞13內周面設有一中央凹槽131及一設於其外周面圍繞該中央凹槽131之凹槽側壁132，其中該凹槽通道14、15、16及17之深度係不大於該凹槽孔洞13之深度者。
該些電性接墊2係配置於該基板1上表面11之至少一部份上。
該歐姆接觸結構3係配置於該基板1下表面12、基板1下表面12之凹槽孔洞13與凹槽通道14、15、16及17上。以上所述，係構成一全新之太陽能電池元件。
請參閱『第3圖～第6圖』所示，係分別為本發明一較佳實施例之仰側結構剖面示意圖、本發明之另一較佳實施例之仰側結構剖面示意圖、及本發明之再一較佳實施例之仰側結構剖面示意圖。如圖所示：上述太陽能電池元件，當本發明於運用時，於一較佳實施例中，其凹槽孔洞13係可形成方形柱狀者(如第3圖所示)或圓形柱狀者(如第4圖所示)，且連接於該凹槽孔洞13開口之凹槽通道14～17亦可進一步僅設置為二條14、15或16、17者，亦或係設置為三條14、15、16者(如第5圖所示)。
藉此，由於光吸收作用區與熱擴散裝置非常鄰近，因此當將其黏結於導電與導熱材料之凹槽通道時，整體元件之電阻與熱阻抗係可大量地降低；再者，本發明亦較傳統之結構具有高結構強度，並無額外鍵結基材之需要，且由於元件光子反射係由背面接觸，因此可改變反射之可能而能有更多之電流輸出，具有高效率且易於製造，並可大量生產進而有高產量之輸出。
綜上所述，本發明係一種太陽能電池元件，可有效改善習用之種種缺點，係可使光吸收作用區鄰近熱擴散裝置而能降低整體元件之電阻與熱阻抗，並具有高結構強度、高效率且易於製造，並可大量生產而有高產量輸出之結構者，進而使本發明之產生能更進步、更實用、更符合使用者之所須，確已符合發明專利申請之要件，爰依法提出專利申請。
惟以上所述者，僅為本發明之較佳實施例而已，當不能以此限定本發明實施之範圍；故，凡依本發明申請專利範圍及發明說明書內容所作之簡單的等效變化與修飾，皆應仍屬本發明專利涵蓋之範圍內。
 (本發明部分)
1．．．基板
11．．．上表面
12．．．下表面
13．．．凹槽孔洞
131．．．中央凹槽
132．．．凹槽側壁
14～17．．．凹槽通道
2．．．電性接墊
3．．．歐姆接觸結構
(習用部分)
4．．．薄層基板
5．．．電性接墊
6．．．接合膠
7．．．熱擴散裝置
第1圖，係本發明之前側結構剖面示意圖。
第2圖，係本發明之右側結構剖面示意圖。
第3圖，係本發明一較佳實施例之仰側結構剖面示意圖。
第4圖，係本發明之另一較佳實施例之仰側結構剖面示意圖。
第5圖，係本發明之再一較佳實施例之仰側結構剖面示意圖。
第6圖，係傳統之太陽能電池元件示意圖。
1．．．基板
11．．．上表面
12．．．下表面
13．．．凹槽孔洞
131．．．中央凹槽
132．．．凹槽側壁
14、15．．．凹槽通道
2．．．電性接墊
3．．．歐姆接觸結構

Claims (7)

  1. 一種太陽能電池元件，其特徵在於可使光吸收作用區鄰近熱擴散裝置並具有高結構強度者，係包括：一基板，係具有一上表面及一相對該上表面之下表面，且於該基板下表面處係具有一柱狀之凹槽孔洞，及連接於該凹槽孔洞開口之四條凹槽通道，並於該凹槽孔洞內周面設有一中央凹槽及一設於其外周面圍繞該中央凹槽之凹槽側壁；複數個電性接墊，係配置於該基板上表面之至少一部份上；以及一歐姆接觸結構，係配置於該基板下表面、基板下表面之凹槽孔洞、凹槽側壁與凹槽通道上。
  2. 依申請專利範圍第1項所述之太陽能電池元件，其中，該凹槽孔洞係形成方形柱狀者。
  3. 依申請專利範圍第1項所述之太陽能電池元件，其中，該凹槽孔洞係形成圓形柱狀者。
  4. 依申請專利範圍第1項所述之太陽能電池元件，其中，該凹槽通道係為導電與導熱材料形成者。
  5. 依申請專利範圍第1項所述之太陽能電池元件，其中，連接該凹槽孔洞開口之凹槽通道亦可進一步設置為二條者。
  6. 依申請專利範圍第1項所述之太陽能電池元件，其中，連接該凹槽孔洞開口之凹槽通道亦可進一步設置為三條者。
  7. 依申請專利範圍第1項所述之太陽能電池元件，其中，該凹槽通道之深度係不大於該凹槽孔洞之深度者。
TW098115079A 2009-05-07 2009-05-07 太陽能電池元件 TWI390746B (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW098115079A TWI390746B (zh) 2009-05-07 2009-05-07 太陽能電池元件
US12/637,424 US20100282311A1 (en) 2009-05-07 2009-12-14 Solar Cell Device Having Low Electrical and Thermal Impedance

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Application Number Priority Date Filing Date Title
TW098115079A TWI390746B (zh) 2009-05-07 2009-05-07 太陽能電池元件

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TW201041156A TW201041156A (en) 2010-11-16
TWI390746B true TWI390746B (zh) 2013-03-21

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003258184A (ja) * 2002-02-27 2003-09-12 Nec Kyushu Ltd 半導体装置およびリードフレーム
TW595004B (en) * 2003-05-28 2004-06-21 Au Optronics Corp Manufacturing method of CMOS TFT device
AU2009255657A1 (en) * 2008-06-04 2009-12-10 Solexant Corp. Thin film solar cells with monolithic integration and backside contact

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TW201041156A (en) 2010-11-16

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