TWI390648B - 樣本檢查裝置 - Google Patents
樣本檢查裝置 Download PDFInfo
- Publication number
- TWI390648B TWI390648B TW095115198A TW95115198A TWI390648B TW I390648 B TWI390648 B TW I390648B TW 095115198 A TW095115198 A TW 095115198A TW 95115198 A TW95115198 A TW 95115198A TW I390648 B TWI390648 B TW I390648B
- Authority
- TW
- Taiwan
- Prior art keywords
- sample
- focal length
- value
- unit
- optical
- Prior art date
Links
- 238000007689 inspection Methods 0.000 title claims description 30
- 230000003287 optical effect Effects 0.000 claims description 56
- 238000010894 electron beam technology Methods 0.000 claims description 29
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 238000005259 measurement Methods 0.000 description 44
- 239000000523 sample Substances 0.000 description 42
- 238000000034 method Methods 0.000 description 10
- 239000013078 crystal Substances 0.000 description 7
- 230000004044 response Effects 0.000 description 7
- 238000001514 detection method Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 230000000875 corresponding effect Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000001444 catalytic combustion detection Methods 0.000 description 4
- 230000002596 correlated effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000005856 abnormality Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000009466 transformation Effects 0.000 description 2
- 230000001131 transforming effect Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000611 regression analysis Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/21—Means for adjusting the focus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/21—Focus adjustment
- H01J2237/216—Automatic focusing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/248—Components associated with the control of the tube
- H01J2237/2482—Optical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2813—Scanning microscopes characterised by the application
- H01J2237/2817—Pattern inspection
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005134136A JP4959149B2 (ja) | 2005-05-02 | 2005-05-02 | 試料検査装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200701384A TW200701384A (en) | 2007-01-01 |
| TWI390648B true TWI390648B (zh) | 2013-03-21 |
Family
ID=37396426
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095115198A TWI390648B (zh) | 2005-05-02 | 2006-04-28 | 樣本檢查裝置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7964844B2 (enExample) |
| JP (1) | JP4959149B2 (enExample) |
| KR (1) | KR101213587B1 (enExample) |
| TW (1) | TWI390648B (enExample) |
| WO (1) | WO2006120917A1 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2126955A1 (en) * | 2007-01-25 | 2009-12-02 | NFAB Limited | Improved particle beam generator |
| JP2008252070A (ja) * | 2007-03-07 | 2008-10-16 | Nuflare Technology Inc | 荷電粒子ビームの焦点合わせ方法及び荷電粒子ビームの非点調整方法 |
| JP5243912B2 (ja) * | 2008-01-24 | 2013-07-24 | 日本電子株式会社 | 荷電粒子ビーム装置におけるビーム位置較正方法 |
| JP5325802B2 (ja) | 2010-01-28 | 2013-10-23 | 株式会社日立ハイテクノロジーズ | 観察方法および観察装置 |
| US8519353B2 (en) * | 2010-12-29 | 2013-08-27 | Varian Semiconductor Equipment Associates, Inc. | Method and apparatus for controlling an asymmetric electrostatic lens about a central ray trajectory of an ion beam |
| JP5331828B2 (ja) * | 2011-01-14 | 2013-10-30 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
| US8912488B2 (en) * | 2012-11-15 | 2014-12-16 | Fei Company | Automated sample orientation |
| US9110039B2 (en) * | 2013-07-25 | 2015-08-18 | Kla-Tencor Corporation | Auto-focus system and methods for die-to-die inspection |
| JP6309366B2 (ja) * | 2014-06-30 | 2018-04-11 | 株式会社ホロン | 荷電粒子線装置における高さ測定装置およびオートフォーカス装置 |
| JP7455676B2 (ja) | 2020-06-05 | 2024-03-26 | 株式会社日立ハイテク | 電子顕微鏡および電子顕微鏡のフォーカス調整方法 |
| JP7367215B2 (ja) * | 2020-06-08 | 2023-10-23 | 株式会社日立ハイテク | 荷電粒子線装置、およびそのフォーカス調整方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2542356C2 (de) * | 1975-09-19 | 1977-10-20 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur Fokussierung der Objektivlinse eines Korpuskular-Durchstrahlungs-Rastermikroskops und Einrichtung zur selbsttätigen Durchführung des Verfahrens, sowie Anwendung |
| JPH053013A (ja) * | 1991-06-24 | 1993-01-08 | Shimadzu Corp | 自動焦点調節装置 |
| JPH07245075A (ja) * | 1994-03-04 | 1995-09-19 | Horon:Kk | 自動焦点合わせ装置 |
| JPH1048163A (ja) * | 1996-08-07 | 1998-02-20 | Shimadzu Corp | 表面分析方法およびその装置 |
| JPH11149895A (ja) * | 1997-08-11 | 1999-06-02 | Hitachi Ltd | 電子線式検査または測定装置およびその方法、高さ検出装置並びに電子線式描画装置 |
| US6107637A (en) * | 1997-08-11 | 2000-08-22 | Hitachi, Ltd. | Electron beam exposure or system inspection or measurement apparatus and its method and height detection apparatus |
| JP2000228166A (ja) * | 1999-02-05 | 2000-08-15 | Horon:Kk | 試料観察装置 |
| JP4610798B2 (ja) * | 2001-06-19 | 2011-01-12 | エスアイアイ・ナノテクノロジー株式会社 | レーザ欠陥検出機能を備えた走査型電子顕微鏡とそのオートフォーカス方法 |
| US6946656B2 (en) * | 2001-07-12 | 2005-09-20 | Hitachi, Ltd. | Sample electrification measurement method and charged particle beam apparatus |
| JP4388270B2 (ja) * | 2002-11-18 | 2009-12-24 | 株式会社日立ハイテクノロジーズ | 表面検査方法及び表面検査装置 |
| TWI345054B (en) * | 2003-05-30 | 2011-07-11 | Ebara Corp | Specimen inspection device and method, and method for making a semiconductor device using such specimen inspection device and method |
| WO2007035834A2 (en) * | 2005-09-21 | 2007-03-29 | Kla-Tencor Technologies Corporation | Methods and systems for creating a recipe for a defect review process |
-
2005
- 2005-05-02 JP JP2005134136A patent/JP4959149B2/ja not_active Expired - Lifetime
-
2006
- 2006-04-27 WO PCT/JP2006/308843 patent/WO2006120917A1/ja not_active Ceased
- 2006-04-27 KR KR1020077027719A patent/KR101213587B1/ko active Active
- 2006-04-27 US US11/913,387 patent/US7964844B2/en active Active
- 2006-04-28 TW TW095115198A patent/TWI390648B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| JP4959149B2 (ja) | 2012-06-20 |
| TW200701384A (en) | 2007-01-01 |
| JP2006310223A (ja) | 2006-11-09 |
| US20090212214A1 (en) | 2009-08-27 |
| KR20080011304A (ko) | 2008-02-01 |
| WO2006120917A1 (ja) | 2006-11-16 |
| KR101213587B1 (ko) | 2013-01-18 |
| US7964844B2 (en) | 2011-06-21 |
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